Low-stress leadless packaging assembly of high-temperature sensitive chip and preparation method of low-stress leadless packaging assembly

Abstract

The invention provides a low-stress leadless packaging assembly of a high-temperature sensitive chip and a preparation method of the low-stress leadless packaging assembly. The low-stress leadless packaging assembly comprises the high-temperature sensitive chip, conductive slurry, conductive contact pins, a glass base and a metal shell. Lead-free electric signal connection is realized by adopting glass conductive paste of a metal-containing PbO-ZnO-B2O3 system, so that the problems that a conventional metal lead is poor in impact resistance and easy to lose efficacy at high temperature are solved; a sealing layer is avoided, and reliable fixed connection between the high-temperature sensitive chip and the glass base is realized by innovatively adopting a sintering process, so that the thermal stress is greatly reduced; a flush structure is adopted to realize packaging of the high-temperature sensitive chip, the cavity effect of packaging is avoided, and the high-temperature sensitive chip has a good dynamic response characteristic; the packaging structure adopts a metal shell, is high in universality, can be welded with a connecting base of any threaded mounting interface, and meets the mounting requirements of a user on the sensor. The packaging structure and the preparation method are simple, and can improve the medium compatibility of the sensor and the adaptability and reliability of the sensor in a severe environment.

Description

Technical Field

[0001] The invention relates to a low-stress leadless packaging component of a high-temperature sensitive chip and a preparation method thereof, belonging to the technical field of high-temperature sensitive chip packaging. Background Art

[0002] In the field of high-temperature measurement, many high-temperature sensitive chips have not been put into practical use as products. The main reason is that the packaging problem that can adapt to harsh conditions such as high temperature has not been solved. The packaging of sensitive chips often involves the combination and connection of multiple materials. Due to the inconsistency of the thermal expansion coefficients of heterogeneous materials, it is very easy to cause thermal stress at high temperatures and lead to output deviation. In addition, in traditional packaging, wire bonding is usually used to lead the signal of the sensitive chip to the packaging structure. The disadvantages of this leaded packaging method are: it can only be used in the measurement environment of insulating media, and in harsh environments, metal leads will oxidize, increase resistance and many other problems.

[0003] CN109781334B discloses a leadless packaging structure of a piezoresistive sensor, and proposes to use a composite sealing glass as a first transition layer for bonding a sensitive chip to reduce the internal thermal stress of the packaging structure. In order to match the thermal expansion coefficients between materials, the invention introduces a first transition layer, which has extremely high material requirements and a complex packaging process, making it difficult to be put into practical use.

[0004] CN114132885 A discloses a leadless packaging structure and method for a high temperature resistant sensor, and proposes to use a sealing layer to bond the sensor sensitive chip, and process the chip packaging groove and through hole on the substrate to obtain the sensor housing. The invention introduces a sealing layer, which requires the thermal expansion coefficient of the material to be consistent, making the packaging difficult to achieve, and the sensor housing material is an insulating material, making the preparation of the whole sensor more complicated. Summary of the invention

[0005] The technical problem solved by the present invention is: to overcome the deficiencies of the prior art, to provide a low-stress leadless packaging component of a high-temperature sensitive chip and a preparation method thereof, to expand the application field of the sensor, and to improve its measuring medium compatibility, adaptability to harsh environments and reliability.

[0006] The technical solution of the present invention is: in the first aspect, a low stress leadless package assembly of a high temperature sensitive chip is provided, comprising: a high temperature sensitive chip, a conductive paste, a conductive pin, a glass base, and a metal shell, wherein:

[0007] The high temperature sensitive chip is bonded by two layers of chips, and the second layer of chip is provided with a through hole for the conductive pin to pass through, which is used to fill the conductive paste; the area on the first layer of chip corresponding to the through hole is prepared with an electrode;

[0008] One end of the conductive pin passes through the through hole on the high temperature sensitive chip, and is sintered with the electrode in the through hole through the conductive paste, so as to realize the electrical signal connection between the electrode of the high temperature sensitive chip and the conductive pin;

[0009] The glass base is provided with a through hole for the conductive pin to pass through, and the conductive pin is inserted from the suspended end thereof and contacts the second layer of the high temperature sensitive chip;

[0010] The metal shell is sleeved on the periphery of the glass base, and the high temperature sensitive chip is flush with the upper end surface of the metal shell;

[0011] The high temperature sensitive chip, glass base and metal shell which have achieved electrical signal connection are formed into a whole through sintering.

[0012] Preferably, the through hole is a truncated cone structure that is narrow at the top and wide at the bottom, and the end of the through hole that contacts the first layer chip is defined as the upper end, and the diameter of the lower end surface is larger than the diameter of the conductive pin;

[0013] The through holes are prepared by sandblasting, laser processing or mechanical drilling.

[0014] Preferably, the conductive paste is filled into the through hole of the high temperature sensitive chip by precision dispensing, and the filling amount of the conductive paste is 2 / 3 of the volume of the through hole.

[0015] Preferably, the material of the high temperature sensitive chip is: silicon carbide, high temperature glass or sapphire;

[0016] The conductive paste is a glass conductive paste of the PbO-ZnO-B2O3 system containing metal;

[0017] The conductive pins and the metal shell are made of the same material, Kovar or stainless steel;

[0018] The material of the glass base is glass powder of the PbO-ZnO-B2O3 system, which is formed by pressing.

[0019] Preferably, the metal shell of the low stress leadless package assembly of the high temperature sensitive chip can be assembled and welded with the cylindrical connection base to form a low stress leadless package sensor of the high temperature sensitive chip.

[0020] In a second aspect, a method for preparing a low-stress leadless package assembly of a high-temperature sensitive chip is provided, comprising:

[0021] S1. Filling the through hole of the high temperature sensitive chip with conductive paste;

[0022] S2. placing the high temperature sensitive chip filled with conductive paste on the groove of the tooling, with the through hole of the high temperature sensitive chip facing upward;

[0023] S3, designing a tool and assembling a tool, and using the tool to insert the conductive pin into the through hole filled with the conductive paste;

[0024] S4, placing the conductive slurry in a sintering furnace to solidify, and after the solidification process is completed, dismantling and taking out the tooling and assembly tooling;

[0025] S5, assembling the high temperature sensitive chip, glass base and metal shell that have achieved electrical signal connection, and placing them in a sintering furnace to solidify them into a whole;

[0026] S6. Take out from the sintering furnace to realize the low stress leadless packaging assembly of the high temperature sensitive chip.

[0027] Preferably, the tooling is a cube or a rectangular parallelepiped structure, and the upper end surface is processed with a groove matching the size of the high-temperature sensitive chip and an annular groove matching the assembly tooling.

[0028] Preferably, the assembly tool is a cylindrical structure, processed with pin holes matching the diameter of the conductive pins, and the number and position of the pin holes correspond to the through holes of the high temperature sensitive chip;

[0029] Along the center of the pin hole, a portion of the height of the cylindrical structure is removed, leaving the bottom of the cylinder to match the annular groove of the tooling, and the remaining pin hole has an open cross-section, so that after assembly, it is easy to observe under a microscope whether the conductive pin enters the through hole of the high-temperature sensitive chip.

[0030] Preferably, when the tool is used to insert the conductive pin into the through hole filled with the conductive paste:

[0031] Align the cylindrical bottom of the assembly tooling into the annular groove of the tooling, and then pass the conductive pin through the pin hole of the assembly tooling to insert the conductive pin into the through hole of the high-temperature sensitive chip to contact the conductive paste and the electrode.

[0032] Preferably, after the low stress leadless package assembly of the high temperature sensitive chip is completed, the low stress leadless package assembly of the high temperature sensitive chip is welded to the connection base by laser welding, thereby completing the preparation of the leadless package sensor.

[0033] Compared with the prior art, the present invention has the following advantages:

[0034] (1) The present invention uses a glass conductive paste of the PbO-ZnO-B2O3 system containing metal, whose thermal expansion coefficient is consistent with that of the high-temperature sensitive chip and the glass base, to achieve leadless electrical signal connection, thereby solving the problem that conventional metal leads have poor impact resistance and are prone to failure at high temperatures;

[0035] (2) The present invention directly uses a sintering process to achieve reliable fixed connection between the high temperature sensitive chip and the glass base, avoiding the use of a sealing layer. The process is simple and greatly reduces thermal stress, thus avoiding the problem of poor sensor measurement accuracy caused by thermal expansion mismatch of multiple materials.

[0036] (3) The present invention adopts a flush packaging structure to realize the packaging of a high temperature sensitive chip, thereby avoiding the tube cavity effect of the package from reducing the natural frequency, so that the sensor has good dynamic response characteristics;

[0037] (4) The packaging structure of the present invention adopts a metal shell, which has strong versatility and can be welded to a connection base with any threaded mounting interface to meet the user's installation requirements for the sensor;

[0038] (5) The present invention realizes the leadless packaging preparation of high-temperature sensitive chips, which has a simple process and is easy to implement. It can improve the media compatibility, adaptability to harsh environments and reliability of the sensor, and expand its application field. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a schematic diagram of the structure of a low stress leadless packaging assembly of a high temperature sensitive chip of the present invention;

[0040] Figure 2 The schematic diagram of the structure of the high temperature sensitive chip suitable for leadless packaging of the present invention;

[0041] Figure 3 This is a schematic diagram of the structure of the present invention to realize leadless assembly of a high temperature sensitive chip and a conductive pin;

[0042] Figure 4 This is a schematic diagram of the structure of the leadless package sensor of the present invention;

[0043] Figure 5 The present invention is a low stress leadless packaging component, sensor and preparation method flow chart of the high temperature sensitive chip.

[0044] Reference numerals:

[0045] 1. High temperature sensitive chip; 2. Conductive paste; 3. Conductive pin; 4. Glass base; 5. Metal shell; 6. Electrode; 7. Through hole; 8. Tooling; 9. Assembly tooling; 10. Connection base; 8-1. Groove; 8-2. Annular groove; 9-1. Pin hole; 9-2. Cylindrical bottom. DETAILED DESCRIPTION

[0046] A low-stress leadless packaging component of a high-temperature sensitive chip comprises: a high-temperature sensitive chip 1, a conductive paste 2, a conductive pin 3, a glass base 4, and a metal shell 5.

[0047] The material of the high temperature sensitive chip 1 can be silicon carbide, high temperature glass or sapphire.

[0048] The material of the conductive paste 2 is a glass conductive paste of the PbO-ZnO-B2O3 system containing metal.

[0049] The conductive pin 3 and the metal shell 5 are made of the same material, which is Kovar alloy or stainless steel.

[0050] The material of the glass base 4 is glass powder of the PbO-ZnO-B2O3 system, which is formed by pressing.

[0051] The high temperature sensitive chip 1 is bonded by two layers of chips, the second layer is provided with through holes 7 for the conductive pins 3 to pass through, the area on the first layer chip corresponding to the through holes 7 is prepared with electrodes 6, and the through holes 7 are used to fill the conductive paste 2.

[0052] The through hole 7 is a truncated cone structure that is narrow at the top and wide at the bottom. The end of the through hole 7 that contacts the first layer chip is defined as the upper end, and the diameter of the lower end surface of the through hole 7 is larger than the diameter of the conductive pin 3. The through hole 7 is prepared by sandblasting, laser processing or mechanical drilling.

[0053] The conductive pins 3 are sintered in the through holes 7 of the high temperature sensitive chip 1 through the conductive paste 2 , so as to realize the electrical signal connection between the electrodes 6 of the high temperature sensitive chip 1 and the conductive pins 3 .

[0054] The high temperature sensitive chip 1 that has achieved electrical signal connection is sintered with the glass base 4 and the metal shell 5 to form a whole, and the high temperature sensitive chip 1 is flush with the upper end surface of the metal shell 5 .

[0055] The conductive paste 2 is filled into the through hole 7 of the high temperature sensitive chip 1 by precision dispensing, and the filling amount of the conductive paste 2 is 2 / 3 of the through hole 7 .

[0056] A tooling 8 is designed, and the high temperature sensitive chip 1 is placed on the tooling 8 with the through hole 7 of the high temperature sensitive chip 1 facing upward.

[0057] An assembly tool 9 is designed, and the conductive pin 3 is passed through the assembly tool 9 and enters the through hole 7 of the high temperature sensitive chip 1, and contacts the conductive paste 2 in the through hole 7. The conductive paste 2 is sintered and solidified to achieve electrical signal connection between the electrode 6 of the high temperature sensitive chip 1 and the conductive pin 3.

[0058] The tooling 8 is a cube or a rectangular parallelepiped structure, and the upper end surface is processed with a groove 8 - 1 that matches the size of the high-temperature sensitive chip 1 and an annular groove 8 - 2 that matches the assembly tooling 9 .

[0059] The assembly tool 9 is a cylindrical structure, and is processed with a pin hole 9-1 that matches the diameter of the conductive pin 3, and the number and position of the pin hole 9-1 correspond to the high temperature sensitive chip 1;

[0060] Along the center position of the pin hole 9-1, a portion of the height of the cylindrical structure is removed, leaving a cylindrical bottom 9-2, which matches the annular groove 8-2 of the tooling 8, and the remaining pin hole 9-1 is an open cross-section, so that after assembly, it is easy to observe under a microscope whether the conductive pin 3 enters the through hole 7 of the high-temperature sensitive chip 1.

[0061] A leadless package sensor, comprising the low stress leadless package assembly of the high temperature sensitive chip and a connection base 10;

[0062] The connection base 10 is a cylindrical structure with holes at both ends, and is used to connect to the metal shell 5 of the low-stress leadless packaging component of the high-temperature sensitive chip by laser welding.

[0063] A method for preparing a low-stress leadless package assembly for a high-temperature sensitive chip comprises the following steps:

[0064] S1, filling the conductive paste 2 into the through hole 7 of the high temperature sensitive chip 1;

[0065] S2, placing the high temperature sensitive chip 1 filled with the conductive paste 2 on the groove 8-1 of the tooling 8, with the through hole 7 of the high temperature sensitive chip 1 facing upward;

[0066] S3. Design a tool 8 and an assembly tool 9, and use the tool to insert the conductive pin 3 into the through hole 7 filled with the conductive paste 2: align the cylindrical bottom 9-2 of the assembly tool 9 into the annular groove 8-2 of the tool 8, and then pass the conductive pin 3 through the pin hole 9-1 of the assembly tool 9, so that the conductive pin 3 is inserted into the through hole 7 of the high-temperature sensitive chip 1 and contacts with the conductive paste 2 and the electrode 6;

[0067] S4, placing the conductive paste 2 in a sintering furnace to solidify, and after the solidification process is completed, dismantling and taking out the tooling 8 and the assembly tooling 9;

[0068] S5, assembling the high temperature sensitive chip 1 with which the electrical signal connection has been achieved, the glass base 4 and the metal shell 5, and placing them in a sintering furnace to solidify them into a whole;

[0069] S6, taking out from the sintering furnace, that is, realizing a low stress leadless packaging component of the high temperature sensitive chip;

[0070] S7. The low stress leadless package component of the high temperature sensitive chip is welded to the connection base by laser welding, thereby realizing the preparation of the leadless package sensor.

[0071] The present invention proposes a low-stress leadless packaging component of a high-temperature sensitive chip and a preparation method thereof, comprising a high-temperature sensitive chip 1, a conductive paste 2, a conductive pin 3, a glass base 4, a metal shell 5, and a connecting base 10. Among them, a through hole is prepared on the high-temperature sensitive chip for filling with a conductive paste; the conductive pin is sintered in the through hole of the high-temperature sensitive chip through the conductive paste to achieve an electrical signal connection between the high-temperature sensitive chip electrode and the conductive pin; the high-temperature sensitive chip that has achieved electrical signal connection is sintered with the glass base and the metal shell to form a whole, and the high-temperature sensitive chip is flush with the upper end surface of the metal shell to achieve a low-stress leadless packaging component of the high-temperature sensitive chip. Finally, the component is laser welded with the connecting base to achieve a leadless packaged sensor.

[0072] Example:

[0073] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0074] like Figure 1 As shown, a low stress leadless package assembly of a high temperature sensitive chip includes a high temperature sensitive chip 1, a conductive paste 2, a conductive pin 3, a glass base 4, and a metal shell 5. Among them, a through hole 7 is prepared on the high temperature sensitive chip 1 for filling the conductive paste 2; the conductive pin 3 is sintered in the through hole 7 of the high temperature sensitive chip 1 through the conductive paste 2 to achieve electrical signal connection between the electrode 6 of the high temperature sensitive chip 1 and the conductive pin 3; the high temperature sensitive chip 1 that has achieved electrical signal connection is sintered with the glass base 4 and the metal shell 5 to form a whole, and the upper end surface of the high temperature sensitive chip 1 and the metal shell 5 are flush.

[0075] like Figures 2 to 5 As shown, a method for preparing a low stress leadless package assembly of a high temperature sensitive chip comprises the following steps:

[0076] S1. The material of the high temperature sensitive chip 1 is high temperature glass with a thickness of 0.4 mm. The through hole 7 is prepared by sandblasting. The electrode 6 appears in the through hole 7. The upper end diameter of the through hole 7 is 450 μm and the lower end diameter is 700 μm.

[0077] Using a jet dispensing valve with a pulse number of 15, the conductive paste 2 is filled into the through hole 7 of the high temperature sensitive chip 1 and placed at room temperature for leveling for 5 minutes;

[0078] S2, placing the high temperature sensitive chip 1 filled with the conductive paste 2 on the groove 8-1 of the tooling 8, with the through hole 7 facing upward;

[0079] S3, align the cylindrical bottom 9-2 of the assembly tool 9 into the annular groove 8-2 of the tool 8, and then pass the conductive pin 3 with a diameter of 450 μm through the assembly tool 9 and into the through hole 7 of the high-temperature sensitive chip 1 to contact the conductive paste 2 and the electrode 6;

[0080] S4, placing the conductive paste 2 in an annealing furnace to solidify, the process parameters are 550°C for 30 minutes, heating rate ≤5°C / min, cooling rate ≤3°C / min; after the curing process is completed, take out the tooling 8 and the assembly tooling 9;

[0081] S5, assemble the high temperature sensitive chip 1 with electrical signal connection, the glass base 4 and the metal shell 5, and place them in a five-zone chain tunnel sintering furnace. The sintering atmosphere is nitrogen with a flow rate of 15L / min. The process parameters are: the temperature of zone 1 is 150°C and the holding time is 2min; the temperature of zone 2 is 300°C and the holding time is 2min; the temperature of zone 3 is 500°C and the holding time is 10min; the temperature of zone 4 is 400°C and the holding time is 1min; the temperature of zone 5 is 300°C and the holding time is 1min;

[0082] S6. When the temperature of the package structure drops to less than 100° C., the package structure is taken out from the sintering furnace, thereby achieving a low-stress leadless package assembly of a high-temperature sensitive chip;

[0083] S7. The low stress leadless package component of the high temperature sensitive chip is welded to the connection base by laser welding, thereby realizing the preparation of the leadless package sensor.

[0084] The present invention abandons the metal leads and insulating sealing layers conventionally used in sensitive chip packaging, realizes the preparation of leadless packaging components and sensors for high-temperature sensitive chips, has a simple process and is easy to implement, can improve the media compatibility, adaptability to harsh environments and reliability of the sensor, and expand its application field.

[0085] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

[0086] The contents not described in detail in the specification of the present invention belong to the prior art known to the professional and technical personnel in this field.

Claims

1. A low stress leadless package assembly for a high temperature sensitive chip, characterized in that include: A high temperature sensitive chip (1), a conductive paste (2), a conductive pin (3), a glass base (4), and a metal shell (5), wherein: The high temperature sensitive chip (1) is bonded by two layers of chips, and the second layer of the chip is provided with a through hole (7) for the conductive pin (3) to pass through, and is used to fill the conductive paste (2); the area on the first layer of the chip corresponding to the through hole (7) is prepared with an electrode (6); One end of the conductive pin (3) passes through a through hole (7) on the high temperature sensitive chip (1), and is sintered with the electrode (6) in the through hole (7) through the conductive paste (2), thereby realizing electrical signal connection between the electrode (6) of the high temperature sensitive chip (1) and the conductive pin (3); The glass base (4) is provided with a through hole for the conductive pin (3) to pass through, and the conductive pin (3) is inserted into the glass base from the suspended end thereof and contacts the second layer of the high temperature sensitive chip (1); The metal shell (5) is sleeved on the periphery of the glass base (4), and the high temperature sensitive chip (1) is flush with the upper end surface of the metal shell (5); The high temperature sensitive chip (1) having achieved electrical signal connection, the glass base (4) and the metal shell (5) are sintered to form a whole.

2. The low stress leadless package assembly of a high temperature sensitive chip according to claim 1, characterized in that: The through hole (7) is a truncated cone-shaped structure that is narrow at the top and wide at the bottom. The end of the through hole (7) that contacts the first layer chip is defined as the upper end, and the diameter of the lower end surface is greater than the diameter of the conductive pin (3). The through hole (7) is prepared by sandblasting, laser processing or mechanical drilling.

3. The low stress leadless package assembly of a high temperature sensitive chip according to claim 1, characterized in that: The conductive paste (2) is filled into the through hole (7) of the high-temperature sensitive chip (1) by means of precision dispensing, and the filling amount of the conductive paste (2) is 2 / 3 of the volume of the through hole (7).

4. The low stress leadless package assembly of a high temperature sensitive chip according to claim 1, characterized in that: Material selection for high temperature sensitive chip (1): silicon carbide, high temperature glass or sapphire; The conductive paste (2) is a glass conductive paste of the PbO-ZnO-B2O3 system containing metal; The conductive pin (3) and the metal housing (5) are made of the same material, which is Kovar alloy or stainless steel; The material of the glass base (4) is glass powder of the PbO-ZnO-B2O3 system, which is formed by pressing.

5. The low stress leadless package assembly of a high temperature sensitive chip according to claim 1, characterized in that: The metal shell (5) of the low stress leadless package assembly of the high temperature sensitive chip can be assembled and welded with the cylindrical connection base (10) to form a low stress leadless package sensor of the high temperature sensitive chip.

6. A method for preparing a low stress leadless package assembly of a high temperature sensitive chip, comprising: S1, filling the through hole (7) of the high temperature sensitive chip (1) with a conductive paste (2); S2, placing the high temperature sensitive chip (1) filled with the conductive paste (2) on the groove (8-1) of the tooling (8), with the through hole (7) of the high temperature sensitive chip (1) facing upward; S3, designing a tool (8) and assembling a tool (9), and using the tool to insert the conductive pin (3) into the through hole (7) filled with the conductive paste (2); S4, placing the conductive paste (2) in a sintering furnace to solidify, and after the solidification process is completed, dismantling and taking out the tooling (8) and the assembly tooling (9); S5, assembling the high temperature sensitive chip (1), the glass base (4), and the metal housing (5) that have achieved electrical signal connection, and placing them in a sintering furnace to solidify them into a whole; S6. Take out from the sintering furnace to realize the low stress leadless packaging assembly of the high temperature sensitive chip.

7. The method for preparing a low stress leadless package assembly of a high temperature sensitive chip according to claim 6, characterized in that: The tooling (8) is a cubic or rectangular structure, and its upper end surface is processed with a groove (8-1) matching the size of the high-temperature sensitive chip (1) and an annular groove (8-2) matching the assembly tooling (9).

8. The method for preparing a low stress leadless package assembly of a high temperature sensitive chip according to claim 7, characterized in that: The assembly tool (9) is a cylindrical structure, and is processed with pin holes (9-1) that match the diameter of the conductive pins (3), and the number and position of the pin holes (9-1) correspond to the through holes (7) of the high-temperature sensitive chip (1); Along the center position of the pin hole (9-1), a portion of the height of the cylindrical structure is removed, leaving a cylindrical bottom (9-2) that matches the annular groove (8-2) of the tooling (8), and the remaining pin hole (9-1) is an open cross-section, so that after assembly, it is easy to observe under a microscope whether the conductive pin (3) enters the through hole (7) of the high-temperature sensitive chip (1).

9. The method for preparing a low stress leadless package assembly of a high temperature sensitive chip according to claim 8, characterized in that: When the conductive pin (3) is inserted into the through hole (7) filled with the conductive paste (2) using the tool: The cylindrical bottom (9-2) of the assembly tool (9) is aligned and inserted into the annular groove (8-2) of the tool (8), and then the conductive pin (3) is passed through the pin hole (9-1) of the assembly tool (9), so that the conductive pin (3) is inserted into the through hole (7) of the high-temperature sensitive chip (1) and contacts the conductive paste (2) and the electrode (6).

10. The method for preparing a low stress leadless package assembly of a high temperature sensitive chip according to claim 6, characterized in that: After the low stress leadless package assembly of the high temperature sensitive chip is completed, the low stress leadless package assembly of the high temperature sensitive chip is welded to the connection base (10) by laser welding, thus completing the preparation of the leadless package sensor.

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