A TES detector comprising a half-frame shaped parallel superconducting electrode structure

Abstract

The application discloses a TES detector containing a half-frame parallel superconducting electrode structure, and belongs to the technical field of superconducting electronics. The detector is characterized in that a half-frame niobium lead with a higher superconducting transition temperature is arranged on the surface of an aluminum-manganese alloy thin film, so that the current distribution in the thin film under a bias condition is changed, and the normal resistance of the thin film is significantly reduced. By adjusting the number, spacing and size of the half-frame electrodes, the resistance of the thin film can be flexibly controlled, the size and thermal conductivity characteristics of the detector can be optimized, and the detector can meet different application requirements. The application significantly improves the performance of the aluminum-manganese alloy superconducting transition edge detector, makes the application of the detector in the related field more efficient, and provides a new possibility for the flexible design and thermal conductivity optimization of an array detector.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of superconducting electronics and cryogenic detectors, and particularly relates to a TES detector comprising a half-frame parallel superconducting electrode structure. BACKGROUND

[0002] A transition-edge sensor (TES) is a kind of superconducting detector with high sensitivity, which can achieve an energy resolution of E / ΔE up to 2000 in the X-ray band, which is superior to traditional semiconductor detectors, and the detection efficiency can be close to 1, and the array structure can be designed through multiplexing technology to detect more flux rays, and the detection efficiency is superior to traditional crystal wavelength dispersive spectrometers. The high energy resolution and high detection efficiency make the TES a strong candidate for the detection system of advanced X-ray astronomical satellites, advanced light source spectrometers and other devices. The TES can also detect a relatively wide band, and can also be used for gamma-ray, optical and infrared detection, and can also be used for detecting charged particles such as electrons and alpha particles. It is a great challenge to regulate the electrical and thermal properties of the TES to meet the requirements of specific projects. SUMMARY

[0003] To solve the above technical problems, the application provides a TES detector comprising a half-frame parallel superconducting electrode structure, which comprises a half-frame electrode TES film, a half-frame electrode TES lead wire, a half-frame electrode TES primary electrode and a half-frame electrode. Through the arrangement of a half-frame niobium lead wire with a higher superconducting transition temperature on the surface of an aluminum-manganese alloy thin film, the current distribution in the thin film under the bias condition is changed, so that the resistance of the superconducting thin film produces a parallel effect, thereby significantly reducing the normal resistance of the thin film. By regulating the number, shape, size and spacing of the half-frame electrode, TESs of different sizes and aspect ratios can be designed for target resistance values, thereby reducing the total area of the TES, improving its thermal conductivity, improving the duty cycle of the array, regulating the magnetic flux passing through the detector, etc.

[0004] To achieve the above purpose, the application adopts the following technical scheme:

[0005] A TES detector comprising a half-frame parallel superconducting electrode structure, comprising a half-frame electrode TES film, a half-frame electrode TES lead wire, a half-frame electrode TES primary electrode and a half-frame electrode, wherein:

[0006] The half-frame electrode TES film is an aluminum-manganese alloy TES film;

[0007] The half-frame electrode TES lead wire is located outside the half-frame electrode TES film and is used to connect one end of the half-frame electrode TES primary electrode;

[0008] The half-frame electrode TES primary electrode is located on the upper surface or lower surface of the half-frame electrode TES film, and the other end of the half-frame electrode TES primary electrode is connected to the half-frame electrode.

[0009] The half-frame electrode TES primary electrode and the half-frame electrode are both L-shaped.

[0010] Further, the half-frame electrode TES lead-out wire includes a half-frame electrode TES left end lead-out wire and a half-frame electrode TES right end lead-out wire, the half-frame electrode TES primary electrode includes a half-frame electrode TES left end primary electrode and a half-frame electrode TES right end primary electrode, and the half-frame electrode includes a left end half-frame electrode and a right end half-frame electrode.

[0011] Further, the half-frame electrode TES left end lead-out wire is connected to the head end of the half-frame electrode TES left end primary electrode, the half-frame electrode TES right end lead-out wire is connected to the head end of the half-frame electrode TES right end primary electrode, the tail end of the half-frame electrode TES left end primary electrode is connected to the head end of the left end half-frame electrode, and the head end of the half-frame electrode TES right end primary electrode is connected to the head end of the right end half-frame electrode.

[0012] Further, the right end half-frame electrode supports duplication into multiple or removal, and when duplicated into multiple, a subsequent right end half-frame electrode is sequentially connected to the L-shaped corner of a previous right end half-frame electrode, and the left end half-frame electrode supports duplication into multiple, and a subsequent left end half-frame electrode is sequentially connected to the L-shaped corner of a previous left end half-frame electrode.

[0013] Further, the right end half-frame electrode and the multiple left end half-frame electrodes are staggered and arranged.

[0014] Further, the transition temperature of the half-frame electrode is higher than the transition temperature of the half-frame electrode TES film of the detector.

[0015] Further, the superconducting transition temperature of the half-frame electrode TES film is 0K to 1K, and the half-frame electrode uses a material with a superconducting transition temperature greater than 1K.

[0016] Further, the half-frame electrode uses niobium material with a superconducting transition temperature of 9.3K.

[0017] Further, in the gap between the right end half-frame electrode and the multiple left end half-frame electrodes, the upper and lower boundaries of the aluminum-manganese film are connected by an equal-width electrode.

[0018] Further, by adjusting the number, size, and spacing of the half-frame electrodes, different sizes and aspect ratios of the half-frame electrode TES film are designed for target resistance values.

[0019] The present application has the advantages of:

[0020] The present application can control the shape of the thin film to save space and adjust the heat conduction performance of the detector according to the specific half-frame cross arrangement under the condition of meeting the required resistance; the TES equivalent resistance of the cross electrode structure is calculated by the resistance network finite element model, and the equivalent resistance obtained by electrodes of different sizes, shapes and spacings can be calculated, and the TES detector designed based on this can be used for X-ray detection, and is also suitable for electromagnetic wave detection of other wave bands such as optics and microwaves, or charged particle detection. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 Figure 1 is a structural diagram of a TES detector comprising a half-frame parallel superconducting electrode structure of the present application;

[0022] Figure 2 Figure 2 is a structural diagram of a conventional aluminum-manganese superconducting transition edge sensor detector in the prior art.

[0023] Reference signs:

[0024] 1-half-frame electrode TES thin film; 2-1-left end lead-out wire of half-frame electrode TES; 2-2-right end lead-out wire of half-frame electrode TES; 3-1-left end primary electrode of half-frame electrode TES; 3-2-right end primary electrode of half-frame electrode TES; 4-1-left end half-frame electrode; 4-2-right end half-frame electrode; 5-ordinary TES thin film; 6-1-left end lead-out wire of ordinary TES; 6-2-right end lead-out wire of ordinary TES; 7-1-left end electrode of ordinary TES; 7-2-right end electrode of ordinary TES. DETAILED DESCRIPTION

[0025] The present application will be further described below in conjunction with the drawings and examples.

[0026] As shown in Figure 1 , the present application provides a TES detector comprising a half-frame parallel superconducting electrode structure, the core part of which has a superconducting aluminum-manganese alloy TES thin film with resistance value sensitive to temperature, a half-frame niobium electrode structure for reducing normal resistance, and a lead-out electrode leading out to a bias source.

[0027] Specifically, the aluminum-manganese film is used as the half-frame-shaped TES film 1, a pair of niobium leads are used as the left end lead-out wire 2-1 and the right end lead-out wire 2-2 of the half-frame-shaped TES, and the left end primary electrode 3-1 and the right end primary electrode 3-2 of the half-frame-shaped TES, the left end half-frame-shaped electrode 4-1 and the right end half-frame-shaped electrode 4-2 are prepared on the upper layer or the lower layer of the half-frame-shaped TES film 1 by using niobium material, the left end primary electrode 3-1 and the right end primary electrode 3-2 of the half-frame-shaped TES are in contact with the half-frame-shaped TES film 1, the head end of the left end primary electrode 3-1 of the half-frame-shaped TES is connected with the left end lead-out wire 2-1, the head end of the right end primary electrode 3-2 of the half-frame-shaped TES is connected with the right end lead-out wire 2-2, the head end of the left end half-frame-shaped electrode 4-1 is connected with the tail end of the left end primary electrode 3-1 of the half-frame-shaped TES, and the head end of the right end half-frame-shaped electrode 4-2 is connected with the head end of the right end primary electrode 3-2 of the half-frame-shaped TES. The left end half-frame-shaped electrode 4-1 can be a single half-frame-shaped structure as shown in FIG. 4A, or a plurality of connected half-frame-shaped structures can be copied to the right, and the right end half-frame-shaped electrode 4-2 can be a single half-frame-shaped structure as shown in FIG. 4B, or a plurality of connected half-frame-shaped structures can be copied to the right, or 0 half-frame-shaped structure, or a plurality of connected half-frame-shaped structures can be copied to the right. The left end half-frame-shaped electrode 4-1 and the right end half-frame-shaped electrode 4-2 need to be staggered. Figure 1 The left end half-frame-shaped electrode 4-1 can be a single half-frame-shaped structure as shown in FIG. 4A, or a plurality of connected half-frame-shaped structures can be copied to the right, and the right end half-frame-shaped electrode 4-2 can be a single half-frame-shaped structure as shown in FIG. 4B, or a plurality of connected half-frame-shaped structures can be copied to the right, or 0 half-frame-shaped structure, or a plurality of connected half-frame-shaped structures can be copied to the right. The left end half-frame-shaped electrode 4-1 and the right end half-frame-shaped electrode 4-2 need to be staggered. Figure 1 The left end half-frame-shaped electrode 4-1 can be a single half-frame-shaped structure as shown in FIG. 4A, or a plurality of connected half-frame-shaped structures can be copied to the right, and the right end half-frame-shaped electrode 4-2 can be a single half-frame-shaped structure as shown in FIG. 4B, or a plurality of connected half-frame-shaped structures can be copied to the right, or 0 half-frame-shaped structure, or a plurality of connected half-frame-shaped structures can be copied to the right. The left end half-frame-shaped electrode 4-1 and the right end half-frame-shaped electrode 4-2 need to be staggered.

[0028] The left end half-frame-shaped electrode 4-1 can be a single half-frame-shaped structure as shown in FIG. 4A, or a plurality of connected half-frame-shaped structures can be copied to the right, and the right end half-frame-shaped electrode 4-2 can be a single half-frame-shaped structure as shown in FIG. 4B, or a plurality of connected half-frame-shaped structures can be copied to the right, or 0 half-frame-shaped structure, or a plurality of connected half-frame-shaped structures can be copied to the right. The left end half-frame-shaped electrode 4-1 and the right end half-frame-shaped electrode 4-2 need to be staggered.

[0029] Preferably, the materials for preparing the left end lead-out wire 2-1, the right end lead-out wire 2-2, the left end primary electrode 3-1, the right end primary electrode 3-2, the left end half-frame-shaped electrode 4-1 and the right end half-frame-shaped electrode 4-2 are not limited to the niobium material with a superconducting transition temperature of 9.3 K, but can also be other materials with a superconducting transition temperature greater than 1 K, such as niobium nitride, molybdenum, lead, etc.

[0030] Preferably, the left end half-frame-shaped electrode 4-1 and the right end half-frame-shaped electrode 4-2 have a transition temperature higher than that of the TES film material of the detector, and the superconducting transition temperature of the aluminum-manganese film is 0 K to 1 K.

[0031] Preferably, the left end half-frame-shaped electrode 4-1 and the right end half-frame-shaped electrode 4-2 have a transition temperature higher than that of the TES film material of the detector, and the superconducting transition temperature of the aluminum-manganese film is 0 K to 1 K. Figure 2It is a schematic diagram of the prior art, the general structure of the superconducting transition edge sensor. The general TES left end electrode 7-1 and the general TES right end electrode 7-2 are linear, distributed on the left and right sides of the general TES film 5, located on the upper layer or the lower layer of the general TES film 5, in contact with the general TES film 5, the general TES left end electrode 7-1 is connected with the general TES left end lead wire 6-1, and the general TES right end electrode 7-2 is connected with the general TES right end lead wire 6-2. As can be seen, compared with the prior art detector, the present application can control the shape of the film to save space and adjust the heat dissipation performance of the detector according to the specific expanded half-frame staggered arrangement under the condition of meeting the required resistance.

[0032] Embodiment

[0033] According to the principles of the present application Figure 1 The normal resistance of a 100 μm × 100 μm square film with two half-frame electrode structures is 9 mΩ, and the thickness is 180 nm. According to the principles of the present application Figure 2 The normal resistance of a 40 μm × 600 μm rectangular film without half-frame electrode structure is about 9 mΩ. In addition, if there is no half-frame electrode, the normal resistance of a 100 μm × 100 μm rectangular film will be 138.5 mΩ.

[0034] In a typical design, the distance between the niobium half-frame electrodes is 20 μm, the thickness is 160 nm, the finger width is 10 μm, the single finger area is 10 μm × 100 μm, the distance between the finger and the upper and lower boundaries of the film is 25 μm, and the normal resistance of the 100 μm × 100 μm square structure TES film is reduced from about 138.5 mΩ to the required 9 mΩ. According to the half-frame electrode size and shape setting of the present application, two half-frames are needed for the left and right electrodes.

[0035] The distance between the two half-frames is the same, and the half-frame staggered design of the TES can reduce the 500 μm gap compared with the non-half-frame staggered structure, greatly improving the duty cycle.

[0036] The perimeter of the half-frame staggered structure TES is 400 μm, and the area is 10000 μm 2 The perimeter of the non-half-frame structure is 1280 μm, and the area is 24000 μm 2 The half-frame staggered structure TES reduces the perimeter, which can reduce the thermal conductivity of the TES to the heat sink, and reduces the area, which can improve the duty cycle, reduce the total heat capacity of the material, improve the thermalization performance, and reduce the magnetic flux interference.

[0037] In addition, different numbers, shapes, sizes and intervals of the half-frame interlaced structures can be designed, and their equivalent resistances are 9 mΩ. The perimeter can be controlled to control the heat conduction, or specific sizes can be provided for special space designs.

[0038] Compared with the conventional aluminum manganese film, the application can effectively reduce the normal resistance, reduce the electric noise and Joule heat of the TES, flexibly control the size and heat conduction area of the TES, solve the problem that the high-resistivity thin film material is not suitable for the X-ray detector, and expand the flexibility of the TES design.

[0039] The design also changes the thermal performance of the TES. On the same substrate, the heat conduction value of the TES to the heat sink in the half-frame interlaced structure described above is 30% of that of the ordinary TES, and the heat capacity is 42% of that of the ordinary TES structure.

[0040] The above specific embodiments further illustrate the purpose, technical solutions and beneficial effects of the application. It should be understood that the above description is only a specific embodiment of the application and is not used to limit the application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the application should be included in the protection scope of the application.

Claims

1. A TES detector comprising a semi-frame-shaped parallel superconducting electrode structure, characterized in that, This includes a semi-frame electrode TES thin film, a semi-frame electrode TES lead wire, a semi-frame electrode TES primary electrode, and a semi-frame electrode, among which... The semi-frame electrode TES film is made of aluminum-manganese alloy TES film, with a superconducting transition temperature of 0K to 1K. The lead wire of the semi-frame electrode TES is located outside the semi-frame electrode TES film; The semi-frame electrode TES primary electrode is located on the upper or lower surface of the semi-frame electrode TES film. Both the primary electrode and the semi-frame electrode of the TES are L-shaped. The transition temperature of the semi-frame electrode is higher than that of the TES film of the semi-frame electrode. It is used to change the current distribution inside the TES film of the semi-frame electrode under bias conditions, so that the resistance of the TES film of the semi-frame electrode produces a parallel effect. The semi-frame electrode TES lead wire includes a left end lead wire of the frame electrode TES and a right end lead wire of the semi-frame electrode TES. The primary electrode of the semi-frame electrode TES includes a left end primary electrode and a right end primary electrode. The semi-frame electrode includes a left end semi-frame electrode and a right end semi-frame electrode. The left end of the semi-frame electrode TES has a lead wire connected to the first end of the left primary electrode of the semi-frame electrode TES. The right end of the semi-frame electrode TES has a lead wire connected to the first end of the right primary electrode of the semi-frame electrode TES. The tail end of the left primary electrode of the semi-frame electrode TES is connected to the first end of the left semi-frame electrode. The first end of the right primary electrode of the semi-frame electrode TES is connected to the first end of the right semi-frame electrode.

2. A TES detector comprising a semi-frame parallel superconducting electrode structure according to claim 1, characterized in that, The right half-frame electrode can be copied into multiple or removed. When copied into multiple, the next right half-frame electrode is connected to the L-shaped corner of the previous right half-frame electrode in sequence. The left half-frame electrode can be copied into multiple, and the next left half-frame electrode is connected to the L-shaped corner of the previous left half-frame electrode in sequence.

3. A TES detector comprising a semi-frame parallel superconducting electrode structure according to claim 2, characterized in that, The right-end semi-frame electrode is arranged alternately with multiple left-end semi-frame electrodes.

4. A TES detector comprising a semi-frame parallel superconducting electrode structure according to claim 1, characterized in that, The semi-frame electrode is made of niobium material with a superconducting transition temperature of 9.3 K.

5. A TES detector comprising a semi-frame parallel superconducting electrode structure according to claim 2, characterized in that, Within the gaps where the right-end semi-frame electrode and multiple left-end semi-frame electrodes intersect, the upper and lower boundaries of the aluminum-manganese thin film are connected by electrodes of equal width.

6. A TES detector comprising a semi-frame parallel superconducting electrode structure according to claim 1, characterized in that, By controlling the number, size, and spacing of the semi-frame electrodes, TES films with different sizes and aspect ratios can be designed for the target resistance value.

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