High-power chip resistor and manufacturing method thereof

Abstract

A high-power chip resistor comprises a resistance layer, a first heat conduction layer, a bonding layer, two inner electrodes, a first protection layer and a second heat conduction layer. The first heat conduction layer is provided with two first heat conductors and a first gap between the two first heat conductors; the bonding layer is arranged between the resistance layer and the first heat conduction layer so as to bond the resistance layer and the first heat conduction layer; the two inner electrodes are respectively arranged above the two ends of the resistance layer; the first protective layer covers the resistive layer and a part of the upper surfaces of the two inner electrodes; the second heat conduction layer is arranged above the first protection layer, the second heat conduction layer is provided with two second heat conduction bodies and a second gap located between the two second heat conduction bodies, and the two second heat conduction bodies are in contact with the other part of the upper surface which is located at the two ends of the two inner electrodes and is not covered by the first protection layer. Therefore, heat energy can be directly guided to the two second heat conductors from the two ends of the two inner electrodes, and then the heat energy is conducted to an external circuit or a printed circuit board by the two second heat conductors, so that the effect of rapid heat dissipation is achieved.

Description

Technical Field

[0001] The present invention relates to a resistor and a manufacturing method thereof, and in particular to a high-power chip resistor and a manufacturing method thereof. Background Art

[0002] The chip resistor of the prior art forms a pair of electrodes at both ends of the substrate carrier, and a metal alloy is formed as a resistance layer between the pair of electrodes, and an insulating protective layer is covered on the resistance layer to achieve the effect of protection and anti-oxidation. When the current flows through the chip resistor, the heat generated is usually conducted to the circuit board by air convection and heat radiation of the substrate carrier (for example, ceramic) itself, and the electrodes at both ends of the substrate carrier connected to the circuit board pads by heat conduction, thereby achieving the overall heat dissipation of the chip resistor.

[0003] However, if the chip resistor does not have other heat dissipation structures, it is easy to cause the temperature of the chip resistor to be too high, and the application power range will be limited due to the influence of high temperature. In addition, the protective layer of the chip resistor will also become brittle due to long-term absorption of heat energy, and lose its protection and anti-oxidation function for the resistor layer. Summary of the invention

[0004] Therefore, the object of the present invention is to provide a high-power chip resistor, comprising: a resistor layer, a first heat-conducting layer, a bonding layer, two inner electrodes, a first protective layer and a second heat-conducting layer. The first heat-conducting layer has two first heat conductors and a first gap between the two first heat conductors; the bonding layer is arranged between the resistor layer and the first heat-conducting layer to bond the resistor layer and the first heat-conducting layer; the two inner electrodes are respectively arranged above the two ends of the resistor layer; the first protective layer covers a portion of the upper surface of the resistor layer and the two inner electrodes; the second heat-conducting layer is arranged above the first protective layer, wherein the second heat-conducting layer has two second heat conductors and a second gap between the two second heat conductors, and wherein the two second heat conductors contact another portion of the upper surface located at the two ends of the two inner electrodes and not covered by the first protective layer.

[0005] According to an embodiment of the present invention, the two first heat conductors and the first gap form a first heat conduction pattern, the two second heat conductors and the second gap form a second heat conduction pattern, and the first heat conduction pattern and the second heat conduction pattern do not correspond to each other.

[0006] According to an embodiment of the present invention, a third gap is provided between the two inner electrodes, where the resistance repairing region of the resistance layer is exposed, and the third gap is filled and covered by the first protection layer.

[0007] According to an embodiment of the present invention, an area of ​​one of the two first heat conductors is larger than an area of ​​the other of the two first heat conductors, and an area of ​​one of the two second heat conductors is larger than an area of ​​the other of the two second heat conductors.

[0008] According to an embodiment of the present invention, it further comprises: a second protective layer filling and covering the second gap between the two second heat conductors and a portion of the surface of the two second heat conductors; and a third protective layer filling and covering the first gap between the two first heat conductors and a portion of the surface of the two first heat conductors.

[0009] According to an embodiment of the present invention, two external electrodes are further included, respectively covering the first heat-conducting layer, the resistance layer, the bonding layer, the two internal electrodes and the corresponding side walls of the second heat-conducting layer.

[0010] Another object of the present invention is to provide a method for manufacturing a high-power chip resistor, comprising: using a bonding layer to bond a resistor layer and a first heat-conducting layer, wherein the bonding layer is located between the resistor layer and the first heat-conducting layer; patterning and etching the first heat-conducting layer so that the first heat-conducting layer forms two first heat conductors and a first gap between the two first heat conductors; forming two internal electrodes, respectively located above two opposite sides of the resistor layer; forming a first protective layer, covering a portion of the upper surface of the resistor layer and the two internal electrodes; and forming a second heat-conducting layer above the first protective layer, wherein the second heat-conducting layer has two second heat conductors and a second gap between the two second heat conductors, and wherein the two second heat conductors contact another portion of the upper surface located at both ends of the two internal electrodes and not covered by the first protective layer.

[0011] According to an embodiment of the present invention, the two first heat conductors and the first gap form a first heat conduction pattern, the two second heat conductors and the second gap form a second heat conduction pattern, and the first heat conduction pattern and the second heat conduction pattern do not correspond to each other.

[0012] According to one embodiment of the present invention, it further includes: forming a second protective layer to fill and cover the second gap between the two second heat conductors and a portion of the surface of the two second heat conductors; and forming a third protective layer to fill and cover the first gap between the two first heat conductors and a portion of the surface of the two first heat conductors.

[0013] According to an embodiment of the present invention, it further includes: forming two external electrodes, respectively covering the first heat-conducting layer, the resistance layer, the bonding layer, the two internal electrodes and the corresponding side walls of the second heat-conducting layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to make the above and other objects, features, advantages and embodiments of the present invention more understandable, the attached drawings are described as follows:

[0015] Figure 1 A cross-sectional schematic diagram illustrating a high power chip resistor according to an embodiment of the present invention;

[0016] Figure 2A and Figure 2B A schematic top view and a schematic back view of a heat-conducting layer of a high-power chip resistor according to an embodiment of the present invention are shown;

[0017] Figure 3A and Figure 3B A schematic top view and a schematic back view of a heat-conducting layer of a high-power chip resistor according to another embodiment of the present invention are shown;

[0018] Figure 4 A schematic diagram of a process of manufacturing a high-power chip resistor according to an embodiment of the present invention; and

[0019] FIG. 5A to FIG. 5L Schematic cross-sectional view of a high-power chip resistor at various process stages according to an embodiment of the present invention. DETAILED DESCRIPTION

[0020] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. The embodiments of the components and configurations described below are provided as examples only and are not intended to be limiting. For example, in the following description, a first feature is formed on or above a second feature, which may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which an additional feature is formed between the first feature and the second feature so that the first feature and the second feature are not in direct contact. In addition, for the purpose of simplicity and clarity, the present invention repeats reference symbols and / or numbers in various examples, which does not itself limit the relationship between the various embodiments and / or components discussed.

[0021] Secondly, in order to clearly present the technical features of this case, the dimensions (such as length, width, thickness and depth) of the elements (such as layers, films, substrates and regions, etc.) in the drawings are not drawn in proportion. Therefore, the description and explanation of the embodiments below are not limited to the dimensions and shapes presented by the elements in the drawings, but should cover the dimensions, shapes and deviations of the two caused by actual processes and / or tolerances. For example, the flat surface shown in the drawings may have rough and / or nonlinear features, while the acute angles shown in the drawings may be rounded. Therefore, the elements presented in the drawings of this case are mainly for illustration, and are not intended to accurately depict the actual shape of the elements, nor are they used to limit the scope of the patent application for this case.

[0022] Please refer to Figure 1 , Figure 1The cross-sectional view of a high-power chip resistor 100 according to an embodiment of the present invention is shown. The high-power chip resistor 100 includes a resistor layer 110, a first heat-conducting layer 120, a bonding layer 130, two internal electrodes 140, a second heat-conducting layer 150, a plurality of protective layers 160 (e.g., a first protective layer 160a, a second protective layer 160b, and a third protective layer 160c), and two external electrodes 170. For the purpose of clear description, the resistor layer 110 has an upper surface 111 and a lower surface 112 in the following text and in the drawings, wherein the two internal electrodes 140 and the second heat-conducting layer 150 are located on the upper side of the upper surface 111 of the resistor layer 110, and the first heat-conducting layer 120 and the bonding layer 130 are located on the lower side of the lower surface 112 of the resistor layer 110.

[0023] like Figure 1 As shown, the resistor layer 110 and the first heat-conducting layer 120 are bonded to each other through the bonding layer 130, and the two inner electrodes 140 are respectively disposed above the two ends of the upper surface 111 of the resistor layer 110, and the second heat-conducting layer 150 is disposed above the inner electrodes 140 and contacts the inner electrodes 140 below at the two ends, so that the heat generated by the high-power chip resistor 100 can be directly conducted from the inner electrodes 140 to the second heat-conducting layer 150, and then the second heat-conducting layer 150 conducts the heat to the external electrode 170, the external circuit or the printed circuit board. In addition, the first heat-conducting layer 120, the two inner electrodes 140 and the partial surfaces of the second heat-conducting layer 150 are all covered by the protective layer 160, and the two external electrodes 170 respectively cover the corresponding side walls of the first heat-conducting layer 120, the resistor layer 110, the bonding layer 130, the inner electrodes 140 and the second heat-conducting layer 150.

[0024] The resistor layer 110 has a resistance trimming area 113, which can be adjusted by laser trimming or physical processing to obtain the desired target resistance. In this embodiment, the material of the resistor layer 110 can be copper-manganese alloy (MnCu), copper-nickel alloy (CuNi), copper-manganese-nickel alloy (CuMnNi), copper-manganese-tin alloy (CuMnSn), nickel-chromium-aluminum alloy (NiCrAl), nickel-chromium-aluminum-silicon alloy (NiCrAlSi), iron-chromium-aluminum alloy (FeCrAl), or other metal alloys, but the present invention is not limited thereto.

[0025] The first heat-conducting layer 120 is bonded to the lower surface 112 of the resistor layer 110 through the bonding layer 130. The first heat-conducting layer 120 has two first heat-conducting bodies 120a and 120b, and there is a gap 120c between the first heat-conducting bodies 120a and 120b, so that the first heat-conducting bodies 120a and 120b do not contact each other. The first heat-conducting layer 120 can be composed of a metal material with high thermal conductivity (such as copper, aluminum, etc.), and the present invention is not limited thereto. The first heat-conducting layer 120 enables the heat generated by the resistor layer 110 to be discharged more quickly, so that the power tolerance capacity of the high-power chip resistor 100 is improved. The bonding layer 130 eliminates the carrier layer (such as a ceramic carrier) with poor heat dissipation and thick thickness, and adopts a thin insulating bonding layer 130 to bond the first heat-conducting layer 120 and the resistor layer 110, which can effectively shorten the path of the heat generated by the resistor layer 110 to the first heat-conducting layer 120. In the embodiment of the present invention, the thickness of the lamination layer 130 is less than about 50 μm.

[0026] The second heat-conducting layer 150 is disposed above the two inner electrodes 140 and the first protective layer 160a. The second heat-conducting layer 150 has two second heat-conducting bodies 150a and 150b, and there is a gap 150c between the second heat-conducting bodies 150a and 150b, so that the second heat-conducting bodies 150a and 150b do not contact each other. The second heat-conducting layer 150 can be composed of a metal material with high thermal conductivity (such as copper, aluminum, etc.), and the present invention is not limited thereto. The second heat-conducting layer 150 increases the heat-conducting path of the high-power chip resistor 100, so that heat can be directly guided to the second heat-conducting layer 150 through the inner electrode 140, and then the second heat-conducting layer 150 conducts the heat to the external electrode 170, the external circuit or the printed circuit board, so as to avoid the first protective layer 160a from absorbing heat energy for a long time, thereby reducing the probability of embrittlement of the first protective layer 160a.

[0027] The protective layer 160 is disposed between the layers of the high-power chip resistor 100 to avoid environmental pollution or oxidation and to achieve the effect of insulation protection. The material of the protective layer 160 includes but is not limited to epoxy resin, polyimide, acrylic resin or other insulating materials. In the present embodiment, the first protective layer 160a covers the upper surface of the resistance repair area 113 of the resistor layer 110 and a portion of the two inner electrodes 140. The second protective layer 160b fills and covers the gap 150c between the second heat conductors 150a and 150b, and covers a portion of the surface of the second heat conductors 150a and 150b. The third protective layer 160c fills and covers the gap 120c between the first heat conductors 120a and 120b, and covers a portion of the surface of the first heat conductors 120a and 120b.

[0028] The two external electrodes 170 extend from the surface of the second protective layer 160b to the surface of the third protective layer 160c to cover the corresponding side walls of the first heat-conducting layer 120, the inner electrode 140, the resistor layer 110, the bonding layer 130 and the second heat-conducting layer 150. The structure of the external electrode 170 includes a copper metal layer, a nickel metal layer and a tin metal layer formed in sequence by an electroplating process, wherein the outermost tin metal layer provides the function of soldering and bonding between the high-power chip resistor 100 and the external circuit board.

[0029] exist Figure 2A and Figure 2B , a top view schematic diagram and a back view schematic diagram of the first heat-conducting layer 120 and the second heat-conducting layer 150 of the high-power chip resistor 100 according to an embodiment of the present invention are further illustrated. In the perspective view, the second heat-conducting body 150a of the second heat-conducting layer 150 corresponds to the first heat-conducting body 120a of the first heat-conducting layer 120, the second heat-conducting body 150b of the second heat-conducting layer 150 corresponds to the first heat-conducting body 120b of the first heat-conducting layer 120, and the gap 150c of the second heat-conducting layer 150 and the gap 120c of the first heat-conducting layer 120 are staggered and do not overlap. In this way, heat accumulation at the overlap of the gap 150c of the second heat-conducting layer 150 and the gap 120c of the first heat-conducting layer 120 can be avoided, so that the heat can be effectively dispersed and removed.

[0030] exist Figure 3A and Figure 3B In the figure, a top view schematic diagram and a back view schematic diagram of the first heat-conducting layer 120 and the second heat-conducting layer 150 of the high-power chip resistor 100 according to another embodiment of the present invention are further illustrated. In the perspective view, the second heat-conducting body 150a of the second heat-conducting layer 150 corresponds to the first heat-conducting body 120a of the first heat-conducting layer 120, the second heat-conducting body 150b of the second heat-conducting layer 150 corresponds to the first heat-conducting body 120b of the first heat-conducting layer 120, and the gap 150c of the second heat-conducting layer 150 and the gap 120c of the first heat-conducting layer 120 are staggered and do not overlap. In this way, heat accumulation at the overlapping part of the gap 150c of the second heat-conducting layer 150 and the gap 120c of the first heat-conducting layer 120 can be avoided, so that the heat can be effectively dispersed and removed. It should be understood that Figure 2A , Figure 2B , Figure 3A and Figure 3B As an exemplary embodiment only, in fact, the first heat-conducting layer 120 and the second heat-conducting layer 150 can have any heat-conducting layer pattern as long as the gaps 120c and the gaps 150c are staggered and do not overlap each other, which is within the scope of the present invention.

[0031] In some preferred embodiments of the present invention, the length of the high power chip resistor 100 is L, wherein the length L1 is in the range of 1 / 2L to 3 / 5L, the length L2 is in the range of 3 / 5L to 2 / 3L, the length L3 is in the range of 1 / 4L to 4 / 15L, and the length L4 is in the range of 3 / 5L to 2 / 3L. The width of the high power chip resistor 100 is W, wherein the width W1 is equal to the width W2 and is in the range of 3 / 4W to W.

[0032] Please refer to Figure 4 , Figure 4 The process diagram of the manufacturing method 200 of the high power chip resistor according to the embodiment of the present invention is shown. The manufacturing method 200 may include: Figure 1 The high power chip resistor 100 shown in the figure can be realized, or can be realized by a similar architecture that can realize similar functions. Figure 4 The manufacturing method 200 combines Figure 1 High power chip resistors 100 and FIG. 5A to FIG. 5L To illustrate, FIG. 5A to FIG. 5L Draw the Figure 4 Schematic cross-sectional views of the high-power chip resistor 100 manufactured by the manufacturing method 200 at various manufacturing stages.

[0033] It should be understood that the manufacturing method 200 is a non-limiting example. Although only some operations are briefly described herein, in fact, Figure 4 Other additional operations may be included before, during or after the manufacturing method 200. In addition, the order of operations provided by the manufacturing method 200 is not intended to be limiting. In fact, some operations may be performed in different orders, and some additional operations may be appropriately modified.

[0034] The manufacturing method 200 includes steps 201 to 205. Figure 4 and Figure 5A (Corresponding to step 201 ), firstly, the bonding layer 130 is used to bond the resistance layer 110 ′ and the first heat conducting layer 120 ′.

[0035] Please refer to Figure 4 and Figure 5B (corresponding to step 202), the resistor layer 110' and the first heat-conducting layer 120' are patterned by printing or photolithography, and the resistor layer 110' and the first heat-conducting layer 120' are etched (for example, wet etching) so that the resistor layer 110' and the first heat-conducting layer 120' are respectively formed into a patterned resistor layer and a patterned first heat-conducting layer (i.e. Figure 1In the present embodiment, the first heat-conducting layer 120 has two first heat-conducting bodies 120a and 120b and a first gap (i.e. Figure 1 The gap 120c is shown. The gap 120c makes the first heat conductor 120a and the first heat conductor 120b not contact each other (ie, the circuit is disconnected and does not provide a conductive path).

[0036] Then in Figure 5C In the process, the third protection layer 160c is formed on a portion of the surface of the first heat conducting layer 120 by printing, lamination or photolithography.

[0037] See also Figure 4 and Figure 5D (corresponding to step 203), two internal electrodes 140 are formed above the two ends of the resistor layer 110. The two internal electrodes 140 can be formed by electroplating. For example, a patterned and removable anti-plating protective layer can be first covered on the resistor layer 110 by printing, lamination, coating or yellow light photolithography, wherein the anti-plating protective layer can be a photoresist, a removable film or ink, etc., and the present invention is not limited thereto. Then, an internal electrode layer is formed on the resistor layer 110 by electroplating, and its material is, for example, copper. Finally, the patterned photoresist, film or ink is removed by a stripping solvent or water washing to form two internal electrodes 140 above the two ends of the resistor layer 110.

[0038] Then in Figure 5E In the embodiment, a resistance adjustment operation is performed on the resistor layer 110 by using laser trimming or physical processing to obtain a desired target resistance value, wherein the area for adjusting the resistance value is the resistor trimming area 113 shown in the figure.

[0039] See also Figure 4 and Fig. 5F (Corresponding to step 204 ), a first protection layer 160 a is formed on the upper surface of the resistance repairing area 113 of the resistance layer 110 and a portion of the two inner electrodes 140 by printing, lamination or photolithography.

[0040] Then in Figure 5G In the embodiment, a patterned and removable mask layer 180 is covered on the first protective layer 160a by printing, lamination, coating or photolithography, wherein the mask layer 180 can be a photoresist, a removable film or ink, etc., but the present invention is not limited thereto.

[0041] Then in Figure 5HIn the embodiment, a metal conductive layer 190 is sputtered on the upper surfaces of the mask layer 180, the first protection layer 160a and the inner electrode 140 by sputtering. The metal conductive layer 190 may be a single layer or a metal conductive layer having multiple layers of different materials, and the material may be, for example, a nickel-chromium alloy (NiCr), a copper-nickel alloy (CuNi), copper (Cu), a titanium-tungsten alloy (TiW), titanium (Ti), a copper-manganese-tin alloy (CuMnSn) or a copper-manganese-nickel alloy (CuMnNi), or other metal conductive materials, but the present invention is not limited thereto.

[0042] Then in Fig.5I In the process, the patterned mask layer 180 (such as photoresist, adhesive film or ink) is removed by a stripping solvent or water washing method, so that the metal conductive layer 190 forms a metal conductive layer 190 ′ which serves as a seed layer of the second heat conductive layer 150 .

[0043] See also Figure 4 and Figure 5J (Corresponding to step 205), based on the pattern of the metal conductive layer 190', an electroplating operation is performed thereon to form a second heat conductive layer 150. The second heat conductive layer 150 is a copper layer or an aluminum layer with high thermal conductivity, and includes two second heat conductive bodies 150a and 150b, and there is a gap 150c between the second heat conductive bodies 150a and 150b, so that the second heat conductive bodies 150a and 150b are not in contact with each other (i.e., they are disconnected and do not provide a conductive path).

[0044] Then in Figure 5K In the process, the second protective layer 160 b is formed on a portion of the upper surface of the second heat conducting layer 150 by printing, lamination or photolithography.

[0045] Finally Figure 5L In the embodiment, a copper metal layer, a nickel metal layer and a tin metal layer are sequentially formed by electroplating to form two external electrodes 170 covering the corresponding side walls of the first heat-conducting layer 120, the inner electrode 140, the resistor layer 110, the bonding layer 130 and the second heat-conducting layer 150. At this point, the high-power chip resistor 100 is basically completed.

[0046] According to the high-power chip resistor and its manufacturing method of the present invention, the following effects can be achieved: using a thin insulating bonding layer to bond the heat-conducting layer and the resistor layer can effectively shorten the path of heat generated by the resistor layer to the heat-conducting layer; the heat-conducting layer is arranged on the upper and lower sides of the resistor layer, which can more effectively increase the heat conduction path and heat dissipation speed, wherein the heat-conducting layer on the upper side of the resistor layer can prevent the protective layer from being embrittled due to long-term absorption of heat energy, thereby improving the reliability of the protective layer; the heat-conducting layer and the inner electrode below are directly in contact at both ends to improve the heat dissipation efficiency; the heat-conducting layers on the upper and lower sides of the resistor layer have patterns that do not correspond to each other, which can prevent heat accumulation in the gap overlap of the two heat-conducting layers, so that the heat can be effectively dispersed and removed, etc. In summary, the high-power chip resistor of the present invention not only improves the overall heat dissipation efficiency of the chip resistor, but also increases the power tolerance range of the chip resistor.

[0047] Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any technician in this technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the definition of the attached claims.

[0048]

Explanation of symbols

[0049] 100: High power chip resistor

[0050] 110: Resistance layer

[0051] 110': Resistance layer

[0052] 111: Upper surface

[0053] 112: Lower surface

[0054] 113: Repair area

[0055] 120: First thermal conductive layer

[0056] 120': first heat conducting layer

[0057] 120a, 120b: first heat conductor

[0058] 120c: Gap

[0059] 130: Lamination layer

[0060] 140: Inner electrode

[0061] 150: Second thermal conductive layer

[0062] 150a, 150b: second heat conductor

[0063] 150c: Clearance

[0064] 160: Protective layer

[0065] 160a: first protective layer

[0066] 160b: Second protective layer

[0067] 160c: The third protective layer

[0068] 170: External electrode

[0069] 180: Mask layer

[0070] 190:Metal conductive layer

[0071] 190':Metal conductive layer

[0072] L,L1,L2,L3,L4: Length

[0073] W, W1, W2: Width

[0074] 200: Manufacturing method

[0075] 201,202,203,204,205: steps.

Claims

1. A high power chip resistor, characterized in that: Include: Resistor layer; A first heat-conducting layer has two first heat-conducting bodies and a first gap between the two first heat-conducting bodies; A bonding layer is disposed between the resistance layer and the first heat-conducting layer to bond the resistance layer and the first heat-conducting layer; Two inner electrodes are respectively disposed above two ends of the resistance layer; A first protective layer covering the resistor layer and a portion of the upper surface of the two inner electrodes; as well as The second heat-conducting layer is arranged above the first protective layer, wherein the second heat-conducting layer has two second heat-conducting bodies and a second gap between the two second heat-conducting bodies, and wherein the two second heat-conducting bodies contact another portion of the upper surface located at both ends of the two inner electrodes and not covered by the first protective layer.

2. The high power chip resistor according to claim 1, characterized in that: The two first heat conductors and the first gap form a first heat conduction pattern, the two second heat conductors and the second gap form a second heat conduction pattern, and the first heat conduction pattern and the second heat conduction pattern do not correspond to each other.

3. The high power chip resistor according to claim 1, characterized in that: A third gap exposing the resistance repairing area of ​​the resistance layer is provided between the two inner electrodes, and the third gap is filled and covered by the first protection layer.

4. The high power chip resistor according to claim 1, characterized in that: The area of ​​one of the two first heat conductors is larger than the area of ​​the other of the two first heat conductors, and the area of ​​one of the two second heat conductors is larger than the area of ​​the other of the two second heat conductors.

5. The high power chip resistor according to claim 1, characterized in that: Also includes: A second protective layer fills and covers the second gap between the two second heat conductors and a portion of the surface of the two second heat conductors; and The third protection layer fills and covers the first gap between the two first heat conductors and a portion of the surface of the two first heat conductors.

6. The high power chip resistor according to claim 1, characterized in that: The invention also comprises two external electrodes, which respectively cover the first heat-conducting layer, the resistance layer, the bonding layer, the two internal electrodes and the corresponding side walls of the second heat-conducting layer.

7. A method for manufacturing a high power chip resistor, characterized in that: Include: Using a bonding layer to bond the resistance layer and the first heat-conducting layer, wherein the bonding layer is located between the resistance layer and the first heat-conducting layer; Patterning and etching the first heat-conducting layer so that the first heat-conducting layer forms two first heat-conducting bodies and a first gap between the two first heat-conducting bodies; forming two inner electrodes, respectively located above two opposite sides of the resistance layer; forming a first protective layer to cover the resistor layer and a portion of the upper surface of the two inner electrodes; and A second heat-conducting layer is formed above the first protective layer, wherein the second heat-conducting layer has two second heat-conducting bodies and a second gap between the two second heat-conducting bodies, and wherein the two second heat-conducting bodies contact another portion of the upper surface located at both ends of the two inner electrodes and not covered by the first protective layer.

8. The method according to claim 7, characterized in that The two first heat conductors and the first gap form a first heat conduction pattern, the two second heat conductors and the second gap form a second heat conduction pattern, and the first heat conduction pattern and the second heat conduction pattern do not correspond to each other.

9. The method according to claim 7, characterized in that: Also includes: forming a second protective layer to fill and cover the second gap between the two second heat conductors and a portion of the surface of the two second heat conductors; and A third protective layer is formed to fill and cover the first gap between the two first heat conductors and a portion of the surface of the two first heat conductors.

10. The method according to claim 7, characterized in that Also includes: Two external electrodes are formed to respectively cover the first heat-conducting layer, the resistance layer, the bonding layer, the two internal electrodes and corresponding side walls of the second heat-conducting layer.

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