Auxiliary heating device and semiconductor heat treatment equipment

Abstract

The invention provides an auxiliary heating device and semiconductor heat treatment equipment. The auxiliary heating device is used for heating an area, close to a process door, in the semiconductor heat treatment equipment, and comprises a shell with a mounting cavity; the heating piece is arranged in the mounting cavity; the cable is connected with the heating piece and used for being connected with a power source; and the connecting piece is connected with the shell, the connecting piece is used for being connected with semiconductor heat treatment equipment, the connecting piece is provided with a wiring channel communicated with the mounting cavity, and the cable is arranged in the wiring channel in a penetrating mode. According to the auxiliary heating device, the heating piece is arranged and matched with the cable and the wiring channel in the connecting piece, and the cable connected with the heating piece can be connected with the external power supply through the wiring channel, so that the heating piece can provide auxiliary supplementary heat for the bottom of the semiconductor heat treatment equipment; the coverage range of a constant-temperature area in the semiconductor heat treatment equipment is increased, and the number and the process quality of product piece treatment are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to an auxiliary heating device for semiconductor heat treatment equipment and semiconductor heat treatment equipment. Background Art

[0002] Semiconductor heat treatment equipment is the core equipment in integrated circuit manufacturing. It is suitable for various oxidation, annealing and thin film growth processes in the integrated circuit manufacturing process. Among them, the reaction furnace is the core component of semiconductor heat treatment equipment.

[0003] like Figure 1 As shown, the reaction furnace in the prior art includes: a furnace body 1, a wafer boat 2, a heat preservation barrel 3 and a process door 4. A reaction chamber 5 is arranged inside the furnace body 1, the wafer boat 2 is arranged in the reaction chamber 5, the process door 4 is arranged at the bottom of the furnace body 1, the heat preservation barrel 3 is arranged on the process door 4, and the wafer boat 2 is arranged above the process door 4 and supported and fixed by the heat preservation barrel 3. The furnace body 1 provides a reaction temperature for the product slices by heating.

[0004] During use, since the bottom of the reaction chamber 5 is close to the furnace mouth, there will be a certain amount of heat leakage. The temperature zone at the bottom consumes the most power during the heating and insulation process of the furnace body, and the low temperature at the bottom of the furnace body will cause the coverage of the constant temperature area of ​​the entire furnace body to be reduced, affecting the number of product sheets processed by a single machine, and also affecting the process quality of the product sheets at the bottom of the furnace. Summary of the invention

[0005] The present invention aims to at least solve the problem of low temperature at the bottom of a furnace body in the prior art, and proposes an auxiliary heating device for semiconductor heat treatment equipment and semiconductor heat treatment equipment.

[0006] To achieve the purpose of the present invention, an auxiliary heating device for semiconductor heat treatment equipment is provided, wherein the auxiliary heating device is used to heat an area inside the semiconductor heat treatment equipment near a process door, and the auxiliary heating device comprises: a shell having an installation cavity; a heating element, wherein the heating element is arranged in the installation cavity; a cable, wherein the cable is connected to the heating element, and wherein the cable is used to connect to a power supply; and a connector, wherein the connector is connected to the shell, and wherein the connector is used to connect to the semiconductor heat treatment equipment, wherein the connector has a wiring channel connected to the installation cavity, and wherein the cable is passed through the wiring channel.

[0007] Optionally, the heating element has a conductive belt, and the conductive belt extends in a rotating or circuitous manner on a plane to form a maze structure, and the plane is a radial plane of the reaction chamber of the semiconductor heat treatment equipment.

[0008] Optionally, the shell includes: a tray, the tray is connected to the connecting member, and the heating member is arranged in the tray; and a cover plate, the cover plate is arranged on the tray, and the cover plate and the tray form a closed installation cavity.

[0009] Optionally, the tray is provided with a supporting portion, on which a plurality of blocks are arranged at intervals; the heating element is arranged on the supporting portion, and the heating element has a conductive belt, which is extended in a rotating or circuitous manner on a plane to form a maze structure with gaps, and the blocks are located in the gaps.

[0010] Optionally, the auxiliary heating device also includes: a temperature detection device, the temperature detection device having a temperature measuring part for detecting the temperature of the heating element; the support part is arranged at the bottom of the tray, an installation space is formed between the heating element and the bottom of the tray, and the temperature measuring part is located in the installation space.

[0011] Optionally, a connection hole is provided at the bottom of the tray, and the wiring channel is connected to the connection hole; the end of the conductive belt is located at the connection hole, the end of the conductive belt is bent toward the inside of the connection hole, and the cable is connected to the end of the conductive belt.

[0012] Optionally, the connecting member includes: a connecting tube, in which the wiring channel is formed, and the first end of the connecting tube is connected to the shell; a sealing plug, which is inserted into the second end of the connecting tube, at least a portion of the sealing plug is located in the wiring channel, and a wiring hole is provided on the sealing plug, the wiring channel is connected to the wiring hole, and the cable is passed through the wiring hole and extends to the outside of the connecting tube.

[0013] Optionally, the connecting pipe includes a main body section and a connecting section, the main body section is connected to the first end of the main body section, the main body section is connected to the shell through the connecting section, the tube diameter of the connecting section is larger than the tube diameter of the main body section, and a first step structure is formed at the connection position between the main body section and the connecting section.

[0014] Optionally, a first limiting boss is provided on the outer peripheral wall of the connecting tube, and the first limiting boss is used for limiting the axial direction of the connecting tube.

[0015] According to a second aspect of the present invention, a semiconductor heat treatment equipment is also disclosed, including: a reaction chamber having an opening structure; a process door, arranged at the position of the opening structure, for sealing the reaction chamber; the above-mentioned auxiliary heating device, wherein the auxiliary heating device is arranged at the position of the process door, and the auxiliary heating device is used to heat the area inside the reaction chamber close to the process door.

[0016] Optionally, the auxiliary heating device comprises: a shell, which is arranged in the reaction chamber near the process door, and the shell has an installation cavity; a heating element, which is arranged in the installation cavity; a cable, which is connected to the heating element and is used to connect a power supply; a connector, which passes through the process door, part of which is located in the reaction chamber, and part of which is located outside the semiconductor heat treatment equipment; the part of the connector located in the reaction chamber is connected to the shell, the connector has a wiring channel, one end of the wiring channel is connected to the installation cavity, and the other end of the wiring channel is connected to the outside of the semiconductor heat treatment equipment, the cable is passed through the wiring channel, and extends to the outside of the semiconductor heat treatment equipment.

[0017] Optionally, when the connecting member includes a connecting tube, the connecting tube is passed through the process door, and a first limiting boss is provided on the outer peripheral wall of the connecting tube, and the first limiting boss cooperates with the process door to limit the axial displacement of the connecting tube; or when the connecting member includes a connecting tube and a sealing plug, the connecting tube is passed through the process door, and a first limiting boss is provided on the outer peripheral wall of the connecting tube, and the first limiting boss cooperates with the process door to limit the axial displacement of the connecting tube; the sealing plug is inserted into the second end of the connecting tube, at least part of the sealing plug is located in the wiring channel, a wiring hole is provided on the sealing plug, the wiring channel is connected to the wiring hole, and the cable is passed through the wiring hole and extends to the outside of the connecting tube.

[0018] Optionally, a buffer pad is provided on the outer peripheral wall of the connecting pipe, and the buffer pad is provided between the first limiting boss and the process door.

[0019] Optionally, it also includes: a heat-insulating barrel, a first end of which is connected to the process door, and a second end of which is used to support the wafer boat; the shell is located at the second end of the heat-insulating barrel, and the connecting piece is axially arranged to penetrate the heat-insulating barrel.

[0020] The auxiliary heating device of the present invention is provided with a heating element and cooperates with the wiring channels inside the cables and connectors. The cables connected to the heating element can be connected to an external power source through the wiring channels, so that the heating element can provide auxiliary supplementary heat for the bottom of the semiconductor heat treatment equipment, solve the problem of low temperature at the bottom of the semiconductor heat treatment equipment, increase the coverage of the constant temperature zone inside the semiconductor heat treatment equipment, improve the number of product sheets processed by a single machine and the process quality of the product sheets, and at the same time reduce the power of the temperature zone at the bottom of the semiconductor heat treatment equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1It is a structural schematic diagram of semiconductor heat treatment equipment in the prior art;

[0022] Figure 2 This is a schematic structural diagram of an auxiliary heating device according to Embodiment 1 of the present invention;

[0023] Figure 3 This is a schematic diagram of the structure of a heating element of an auxiliary heating device according to Embodiment 1 of the present invention;

[0024] Figure 4 An exploded view of a housing and a heating element of an auxiliary heating device according to a first embodiment of the present invention;

[0025] Figure 5 A cross-sectional view of a tray of an auxiliary heating device according to Embodiment 1 of the present invention;

[0026] Figure 6 A diagram showing the coordination of a tray, a heating element and a temperature detection device of an auxiliary heating device according to a first embodiment of the present invention;

[0027] Figure 7 An exploded view of the connecting pipe and the sealing plug of the auxiliary heating device according to the first embodiment of the present invention;

[0028] Figure 8 This is a schematic structural diagram of a sealing plug of an auxiliary heating device according to Embodiment 1 of the present invention;

[0029] Fig. 9 is a cross-sectional view of a sealing plug of an auxiliary heating device according to Embodiment 1 of the present invention;

[0030] Fig.10 It is a cross-sectional diagram of the connection pipe and the sealing plug of the auxiliary heating device of the first embodiment of the present invention;

[0031] Fig.11 It is a schematic structural diagram of a semiconductor heat treatment device according to Embodiment 1 of the present invention.

[0032] List of reference numerals:

[0033] 10. housing; 11. tray; 111. support portion; 112. stopper; 113. connection hole;

[0034] 114, bottom plate; 115, side wall; 12, cover plate; 20, heating element; 21, conductive belt; 211, end; 212, arc segment; 22, gap; 30, cable; 40, connector; 41, connecting pipe; 411, wiring channel; 412, main body section; 413, connecting section; 414, first step structure; 415, first limiting boss; 416, first limiting hole; 42, sealing plug; 421, wiring hole; 421a, large diameter section; 421b, small diameter section; 422, second step structure; 423, second limiting boss; 424 , first end face; 425, second end face; 426, protrusion; 427, second limiting hole; 428, wiring groove; 43, buffer pad; 44, O-ring; 50, temperature detection device; 51, thermocouple tube; 511, first tube body; 512, second tube body; 513, arc structure; 52, thermocouple; 521, temperature measuring part; 60, inner protective tube; 70, outer protective tube; 80, heat shrink sleeve; 90, limiting piece; 100, furnace body; 110, reaction chamber; 200, process door; 300, auxiliary heating device; 400, insulation barrel; 500, crystal boat. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the technical solution of the present invention, the auxiliary heating device for semiconductor heat treatment equipment and the semiconductor heat treatment equipment provided by the present invention are described in detail below in conjunction with the accompanying drawings.

[0036] like Figure 2 The first embodiment shown discloses an auxiliary heating device for semiconductor heat treatment equipment, including: a housing 10, a heating element 20, a cable 30 and a connector 40. The housing 10 has an installation cavity; the heating element 20 is arranged in the installation cavity; the cable 30 is connected to the heating element 20, and the cable 30 is used to connect to a power source; the connector 40 is connected to the housing 10, and the connector 40 is used to connect to the semiconductor heat treatment equipment, and the connector 40 has a wiring channel 411 communicating with the installation cavity, and the cable 30 is passed through the wiring channel 411.

[0037] When in use, the auxiliary heating device 300 is arranged in the semiconductor heat treatment equipment and connected to the semiconductor heat treatment equipment through the connecting member 40, so that the housing 10 with the heating element 20 arranged therein is located in the semiconductor heat treatment equipment near the process door 200 (see Fig.11 ), the cable 30 connected to the heating element 20 can be connected to an external power source through the wiring channel 411, so as to supply power to the heating element 20. The heating element 20 heats the area near the process door 200 in the semiconductor heat treatment equipment, thereby realizing auxiliary heat supplement to the area near the furnace body inside the semiconductor heat treatment equipment, thereby increasing the coverage of the constant temperature zone inside the semiconductor heat treatment equipment, and improving the number of product sheets processed by a single machine and the process quality of the product sheets.

[0038] The auxiliary heating device 300 of the present invention is provided with a heating element 20 and cooperates with the wiring channel 411 inside the cable 30 and the connecting element 40. The cable 30 connected to the heating element 20 can be connected to an external power source through the wiring channel 411, so that the heating element 20 can provide auxiliary supplementary heat for the bottom of the furnace body 100, solve the problem of low temperature at the bottom of the furnace body 100, increase the coverage of the constant temperature zone inside the semiconductor heat treatment equipment, improve the number of product sheets processed by a single machine and the process quality of the product sheets, and at the same time reduce the power of the temperature zone at the bottom of the furnace body 100.

[0039] like Figure 3 As shown, the heating element 20 has a conductive strip 21, which extends in a rotating or circuitous manner on a plane to form a labyrinth structure. The heating element 20 with such a structure can increase the heating surface of the heating element 20 and make the thermal field more uniform, thereby improving the heating effect and heating efficiency. Figure 3 In this embodiment, the heating element 20 is in the form of a sheet and is made of an electric heating alloy. The conductive belt 21 of the heating element 20 is distributed in a circular maze shape. Such a distribution structure can effectively increase the length of the conductive belt 21 to provide a longer heating length and a larger radiation area, thereby increasing the heating area of ​​the heater.

[0040] It should be noted that in the first embodiment, although the heating element 20 has a conductive belt 21, and the conductive belt 21 extends in a plane in a rotating or circuitous manner to form a maze structure, this is not restrictive. In some other embodiments not shown in the figure, the heating element 20 can also be other structures, such as: a spiral heating wire, that is, as long as the components that can heat the surrounding area through a power supply are within the protection scope of the present invention. Compared with other structures, the heating element 20 of this embodiment can provide a planar radiation area for the product sheet, which not only has a larger heating area, but also makes the thermal field at the bottom of the furnace body 100 more uniform.

[0041] Specifically, if Figure 4 As shown, the housing 10 includes: a tray 11 and a cover plate 12. The tray 11 is connected to the connecting member 40, and the heating member 20 is arranged in the tray 11; the cover plate 12 is arranged on the tray 11, and the cover plate 12 and the tray 11 form a closed installation cavity. The closed installation cavity is formed by arranging the tray 11 and the cover plate 12, and the heating member 20 is arranged in the installation cavity, so that the installation cavity is isolated from the interior of the reaction chamber 110 (see Fig.11 ), so as to prevent the substances in the installation cavity from contaminating the reaction chamber 110. Moreover, the shell 10 is in a relatively flat cylindrical shape as a whole, and its end surface can cooperate with the heating element 20 to form a heating surface, which can face the bottom of the wafer boat 500 during heating, thereby effectively heating the bottom of the wafer boat 500 and improving the heating effect.

[0042] It should be noted that, in the present embodiment, the connector 40, the tray 11 and the cover plate 12 are made of quartz material, and the three are connected together by welding. The use of quartz material can withstand high temperatures and has good permeability, and can better transmit radiant heat.

[0043] like Figure 4 and Figure 5 As shown, the tray 11 is provided with a supporting portion 111 , a plurality of stoppers 112 are arranged at intervals on the supporting portion 111 , and the heating element 20 is arranged on the supporting portion 111 .

[0044] Specifically, if Figure 4 As shown, the tray 11 includes a circular base plate 114 and a side wall 115 circumferentially arranged at the edge of the base plate 114, a connecting hole 113 is arranged at the center position of the base plate 114, and the connecting piece 40 is connected to the outer side of the base plate 114 at the position of the connecting hole 113, and its wiring channel 411 is connected to the connecting hole 113, and then connected to the installation cavity through the connecting hole 113.

[0045] like Figure 5 As shown, the support portion 111 is a reinforcing rib connected to the bottom plate 114, the first end of the support portion 111 is located at the connection hole 113, and the second end is connected to the inner side of the side wall 115. In the direction toward the cover plate 12, a plurality of raised stoppers 112 are provided on the support portion 111, and the plurality of stoppers 112 are spaced apart along the length direction of the support portion 111, and a fixed space for fixing the conductive belt 21 is formed between adjacent stoppers 112. At the same time, there are a plurality of support portions 111, and the plurality of support portions 111 are spaced apart circumferentially to form a spoke-like structure.

[0046] like Figure 6 As shown, the heating element 20 is arranged on the support portion 111. The support portion 111 is used to support the heating element 20 so that the heating element 20 is closer to the cover plate 12, thereby shortening the distance of heat transfer and making it easier for heat to be transferred to the target position. At the same time, the heating element 20 is relatively far from the bottom plate 114, and an installation space is formed between the heating element 20 and the bottom plate 114 of the tray 11, and the installation space can be used to install other components. It can be seen that by providing the support portion 111, it can not only play a role in strengthening the strength of the bottom plate 114, but also improve the heating effect and optimize the installation space. It is a typical one-thing-for-multiple-purposes.

[0047] In addition, if Figure 6 As shown, after the heater 20 is assembled on the support portion 111, the conductive belt 21 is located in a fixed space, that is, different positions on the conductive belt 21 are fixed by multiple groups of blocks 112, so that the position of the heater 20 is relatively fixed to avoid poor contact caused by shaking.

[0048] It should be noted that if Figure 3 and Figure 6 As shown, the labyrinth structure formed by the heating element 20 is circular in shape as a whole, and the conductive belt 21 forms arc segments 212 of different lengths by winding or turning, and each arc segment 212 is located in the same plane and the center of each arc segment 212 is the same, that is, the circles where all the arc segments 212 are located are concentric circles. Among them, the arc segments 212 located on different circles are distributed from the inside to the outside, and the arc segments 212 located on the same circle are distributed along the circumferential direction, thereby forming a labyrinth structure. In the labyrinth structure, there is a gap 22 between two radially adjacent arc segments 212, and the stopper 112 is located in the gap 22, and its function is to isolate the radially adjacent conductive belts 21, and play the role of radial isolation and insulation. This is because at high temperature, due to thermal expansion and contraction, the conductive belt 21 will expand and deform, resulting in the gap 22 between the two radial arc segments 212 to shrink, and there is even the possibility of contact between the two arc segments 212, causing a short circuit problem. The stopper 112 can effectively prevent the contact between adjacent conductive strips 21 due to thermal deformation of the conductive strips 21 , thereby improving the reliability of the auxiliary heating device 300 .

[0049] It is understandable that if Figure 3 As shown, the two ends 211 of the conductive strip 21 are located at the center of the integral heating element 20. Figure 6 It can be seen that the end 211 of the conductive tape 21 is exactly located at the connection hole 113, and the end 211 of the conductive tape 21 is bent toward the inside of the connection hole 113, and the cable 30 is welded to the end 211 of the conductive tape 21. This method can reduce welding stress.

[0050] like Figure 4 As shown, the auxiliary heating device 300 further includes: a temperature detection device 50, the temperature detection device 50 has a temperature measuring portion 521 for detecting the temperature of the heating element 20, and the temperature measuring portion 521 is located in the installation space, so that the temperature monitoring can be conveniently controlled.

[0051] Specifically, if Figure 6As shown, the temperature detection device 50 includes: a thermocouple tube 51 and a thermocouple 52. The thermocouple tube 51 has a first tube body 511 and a second tube body 512 connected to the first tube body 511. The first tube body 511 is arranged to pass through the wiring channel 411, and the second tube body 512 is located in the installation space, and the axis of the first tube body 511 forms an angle with the axis of the second tube body 512; the thermocouple 52 is arranged in the thermocouple tube 51, and the thermocouple 52 has a temperature measuring part 521, and the temperature measuring part 521 is located in the second tube body 512, that is, the temperature measuring part 521 of the thermocouple 52 is located in the installation space between the heating element 20 and the bottom plate 114, so that the temperature of the heating element 20 can be monitored. The first end of the first tube body 511 is an open end, the first end of the second tube body 512 is connected to the second end of the first tube body 511, the second end of the second tube body 512 is a closed end, and a buffer space is provided between the temperature measuring portion 521 and the closed end of the second tube body 512. By providing a buffer space between the temperature measuring portion 521 of the thermocouple 52 and the closed end of the second tube body 512, the problem of inaccurate temperature measurement caused by the thermocouple 52 being stretched due to thermal expansion at high temperature and touching the thermocouple tube 51 can be avoided, thereby effectively improving the accuracy of temperature measurement.

[0052] In addition, in this embodiment, the connection position between the first tube body 511 and the second tube body 512 is an arc structure 513. This is because, during assembly, the thermocouple 52 needs to be assembled from the open end of the first tube body 511 into the second tube body 512. By providing the arc structure 513, it is convenient for the thermocouple 52 to enter the second tube body 512 from the first tube body 511, thereby improving assembly efficiency.

[0053] After assembly, when the heating element 20 is powered on and heated, the heat is radiated to the temperature measuring part 521 of the thermocouple 52. The thermocouple 52 feeds back the collected temperature signal to the controller, and then the controller adjusts the heating power of the heating element 20 to achieve temperature rise and fall. When the temperature exceeds the set limit, the controller can protect the heating element 20 and the entire device from overheating by cutting off the power. The thermocouple tube 51 can be used to provide isolation and protection for the thermocouple 52.

[0054] It is understandable that the temperature measuring part 521 of the thermocouple 52 may be one or more. In the present embodiment, there are two temperature measuring parts 521 of the thermocouple 52, one of which is located near the side wall 115 of the tray 11 to measure the temperature at the edge of the heating element 20, and the other is located at the connection hole 113 to measure the temperature near the center of the heating element 20. In addition, in the present embodiment, the thermocouple tube 51 is made of quartz.

[0055] like Figure 7As shown, the connector 40 includes: a connecting tube 41 and a sealing plug 42. A wiring channel 411 is formed in the connecting tube 41, and the first end of the connecting tube 41 is connected to the housing 10; the sealing plug 42 is plugged into the second end of the connecting tube 41, and at least part of the sealing plug 42 is located in the wiring channel 411. A wiring hole is provided on the sealing plug 42, and the wiring channel 411 is connected to the wiring hole 421. The cable 30 is inserted into the wiring hole 421 and extends to the outside of the connecting tube 41, and the thermocouple tube 51 passes through the sealing plug 42 and extends to the outside of the connecting tube 41.

[0056] In this embodiment, the connecting tube 41 is made of quartz. By setting the connecting tube 41, support can be provided for the entire auxiliary heating device 300. At the same time, the wiring channel 411 inside the connecting tube 41 can effectively provide protection for the cable 30 and lead the cable 30 to the outside of the semiconductor heat treatment equipment.

[0057] like Figure 5 and Figure 6 As shown, the connecting pipe 41 includes a main section 412 and a connecting section 413. The main section 412 is connected to the first end of the main section 412. The main section 412 is connected to the bottom plate 114 of the tray 11 through the connecting section 413. The diameter of the connecting section 413 is larger than the diameter of the main section 412. A first step structure 414 is formed at the connection position between the main section 412 and the connecting section 413. By setting the connecting section 413, the main section 412 is connected to the bottom plate 114 of the tray 11, which can play a transition role. On the one hand, since the diameter of the connecting section 413 is larger, the area of ​​connection with the bottom plate 114 is larger, and the stress at the connection is more dispersed, avoiding excessive stress concentration leading to fracture and damage at the connection between the connector 40 and the shell 10; in addition, since the diameter of the connecting section 413 is larger, the internal space is also larger, which facilitates the installation of the cable 30 and the temperature detection device 50.

[0058] like Figure 2 As shown, a first limiting boss 415 is provided on the outer peripheral wall of the connecting tube 41, and the first limiting boss 415 is used to limit the axial direction of the connecting tube 41. Specifically, the first limiting boss 415 is located on the main body section 412. Fig.11 As shown, when assembled to the process door 200, the process door 200 is provided with a mounting hole, the connecting pipe 41 is passed through the mounting hole, and the outer diameter of the first limiting boss 415 is larger than the inner diameter of the mounting hole, so that the first limiting boss 415 is just stuck on the inner wall surface of the process door 200 to limit the axial displacement of the connecting pipe 41, that is, Fig.11 The auxiliary heating device 300 is limited in the vertical direction to prevent the auxiliary heating device 300 from falling and axial movement due to its own gravity. In order to avoid wear between the first limiting boss 415 and the process door 200, a buffer pad 43 is provided on the outer peripheral wall of the connecting pipe 41, and the buffer pad 43 is provided between the first limiting boss 415 and the process door 200.

[0059] It is understandable that in order to improve the sealing performance, a seal is provided between the connecting pipe 41 and the process door 200. Specifically in this embodiment, an O-ring 44 is installed on the outer peripheral wall of the connecting pipe 41, so that a seal is formed between the connecting pipe 41 and the process door 200 to isolate the reaction chamber 110 from the external environment.

[0060] like Figure 8 As shown, the sealing plug 42 is cylindrical, which matches the wiring channel 411, and the sealing plug 42 has a first end and a second end that are arranged opposite to each other.

[0061] like Fig.10 As shown, the first end of the sealing plug 42 is located in the connecting tube 41, and a second limiting boss 423 is provided on the outer peripheral wall of the sealing plug 42 near the second end. The second end of the connecting tube 41 abuts against the second limiting boss 423, so that the connecting tube 41 and the sealing plug 42 are matched in the axial upper limit position. By arranging the sealing plug 42 at the second end of the connecting tube 41, the second end of the connecting tube 41 can be blocked. Among them, the material of the sealing plug 42 is a high-strength plastic that is resistant to high temperatures, and the sealing plug 42 plays the role of supporting the thermocouple tube 51. In addition, by arranging the second limiting boss 423, it is possible to prevent the sealing plug 42 from entering the connecting tube 41 completely, so that it is convenient to take it out.

[0062] like Fig. 9 As shown, the first end of the sealing plug 42 has a first end surface 424, the second end of the sealing plug 42 has a second end surface 425, a protrusion 426 is provided on the second end surface 425, the first end of the wiring hole 421 is located on the first end surface 424, and the second end of the wiring hole 421 is located on the end surface of the protrusion 426. The wiring hole 421 is divided into a large diameter section 421a and a small diameter section 421b in the direction from the first end to the second end, and the connection position of the large diameter section 421a and the small diameter section 421b forms a second step structure 422 on the inner peripheral wall of the wiring hole 421.

[0063] like Figure 7 and Fig.10 As shown, the auxiliary heating device 300 further includes: an inner protective tube 60, an outer protective tube 70 and a heat shrink sleeve 80. The inner protective tube 60 is inserted into the connecting tube 41, and the cable 30 is inserted into the inner protective tube 60. The inner protective tube 60 is used to protect the cable 30. In this embodiment, the cable 30 is a round rod-shaped material, and the inner protective tube 60 is arranged outside the cable 30. The ceramic material can play a role in heat insulation and insulation.

[0064] like Figure 6 As shown, the first end of the inner protective tube 60 extends to the connection position between the cable 30 and the heating element 20, so as to protect the cable 30 to the maximum extent and play an effective insulation role; Fig.10As shown, the second end of the inner protective tube 60 is inserted into the large diameter section 421a of the wiring hole 421, and the second end of the inner protective tube 60 abuts against the second step structure 422, and the second step structure 422 can support the inner protective tube 60 in the axial direction of the wiring hole 421.

[0065] like Figure 7 and Fig.10 As shown, the outer protective tube 70 is used to protect the portion of the cable 30 located outside the connecting tube 41, the first end of the outer protective tube 70 is inserted into the small diameter section 421b of the wiring hole 421, and the cable 30 is inserted into the outer protective tube 70; the heat shrink sleeve 80 is simultaneously sleeved on the protrusion 426 and the outer protective tube 70, and the heat shrink sleeve 80 is used to fix the relative position of the protrusion 426 and the outer protective tube 70. When in use, the heat shrink sleeve 80 is sleeved on the protrusion 426, and after the heat shrink sleeve 80 is heated, the heat shrink sleeve 80 can cover the outer protective tube 70 and the protrusion 426 together, so that the outer protective tube 70, the cable 30 and the sealing plug 42 are relatively fixed, and no vertical movement occurs.

[0066] like Figure 8 As shown, a wiring groove 428 is provided on the outer wall of the sealing plug 42, and the two ends of the wiring groove 428 extend to the first end and the second end of the sealing plug 42 respectively. The thermocouple tube 51 is inserted into the wiring groove 428, thereby extending to the outside of the connecting tube 41. At the same time, the sealing plug 42 and the thermocouple tube 51 are tightly matched, thereby playing an axial support role for the thermocouple tube 51.

[0067] like Figure 7 As shown, the auxiliary heating device 300 further includes: a stopper 90, which is disposed on the inner wall of the connecting pipe 41. At the same time, part of the stopper 90 is also located in the sealing plug 42, and the connecting pipe 41 and the sealing plug 42 are fixed by the stopper 90. A first stopper hole 416 is provided on the outer wall of the connecting pipe 41, and the first stopper hole 416 penetrates the pipe wall of the connecting pipe 41. A second stopper hole 427 is provided on the outer wall of the sealing plug 42, and the first stopper hole 416 corresponds to the second stopper hole 427. The stopper 90 is located in both the first stopper hole 416 and the second stopper hole 427. Specifically, in this embodiment, the first stopper hole 416 and the second stopper hole 427 are both threaded holes, and the stopper 90 is a bolt. When in use, after the sealing plug 42 is inserted into the connecting tube 41, the first limiting hole 416 is aligned with the second limiting hole 427, and the bolt is placed in the first limiting hole 416. By rotating the bolt, a part of the bolt enters the second limiting hole 427, so that the sealing plug 42 and the connecting tube 41 are relatively fixed, thereby improving the tightness and reliability of the fit between the two.

[0068] In the above embodiment, the housing 10, the connector 40 and the thermocouple tube 51 are all made of quartz. However, this is not restrictive. The housing 10, the connector 40 and the thermocouple tube 51 may also be made of other high temperature resistant materials.

[0069] like Fig.11 As shown, the first embodiment of the present invention also discloses a semiconductor heat treatment equipment, including: a furnace body 100, a reaction chamber 110, a process door 200, a heat preservation barrel 400, a wafer boat 500 and the above-mentioned auxiliary heating device 300. The reaction chamber 110 is arranged inside the furnace body 100, and the furnace body 100 is used to heat the reaction chamber 110 inside. The bottom of the reaction chamber 110 has an opening structure, and the process door 200 is arranged at the position of the opening structure to seal the reaction chamber 110. The wafer boat 500 is arranged in the reaction chamber 110; the first end of the heat preservation barrel 400 is connected to the process door 200, and the second end of the heat preservation barrel 400 is supported on the bottom of the wafer boat 500.

[0070] The auxiliary heating device 300 is disposed at the position of the process door 200 , and is used to heat the area inside the reaction chamber 110 close to the process door 200 .

[0071] When in use, the heating element 20 is used to heat the area near the process door 200 and the bottom of the wafer boat 500 in the semiconductor heat treatment equipment, thereby achieving auxiliary heat supplementation of the area near the furnace body 100 inside the semiconductor heat treatment equipment, thereby increasing the coverage of the constant temperature area inside the semiconductor heat treatment equipment and improving the number of product sheets processed by a single machine and the process quality of the product sheets.

[0072] The semiconductor heat treatment equipment of the present invention is provided with an auxiliary heating device 300, so that the heating element 20 can provide auxiliary supplementary heat for the bottom of the furnace body 100, thereby solving the problem of low temperature at the bottom of the furnace body 100, increasing the coverage of the constant temperature area inside the semiconductor heat treatment equipment, improving the number of product sheets processed by a single machine and the process quality of the product sheets, and at the same time reducing the power of the temperature zone at the bottom of the furnace body 100.

[0073] The shell 10 has an installation cavity, and the heating element 20 is arranged in the installation cavity. The shell 10 is arranged in the reaction chamber 110 near the process door 200 and is located at the second end of the heat preservation barrel 400.

[0074] The connecting tube 41 passes through the process door 200 and the insulation barrel 400 at the same time. The first end of the connecting tube 41 is connected to the shell 10, and the second end of the connecting tube 41 is located outside the reaction chamber 110. A wiring channel 411 is provided in the connecting tube 41. One end of the wiring channel 411 is connected to the installation cavity, and the other end of the wiring channel 411 is connected to the outside of the semiconductor heat treatment equipment. A first limiting boss 415 is provided on the connecting tube 41. In the vertical direction of the furnace body 100, the connecting tube 41 is limited and matched with the process door 200 through the first limiting boss 415.

[0075] The cable 30 is connected to the heating element 20 and is used to connect to a power source; the cable 30 is passed through the wiring channel 411 and extends to the outside of the semiconductor heat treatment equipment.

[0076] It should be noted that in order to improve the heating effect, Figure 3 As shown, the heating element 20 has a conductive belt 21, and the conductive belt 21 extends in a rotation or circuitous manner on a plane to form a labyrinth structure, and the plane is the radial plane of the furnace body 100. Since the rotation plane of the conductive belt 21 is the radial plane of the furnace body 100, the formed heating surface is parallel to the radial plane of the furnace body 100 and parallel to the wafer setting direction, so that the heating surface of the heating element 20 is increased, and the thermal field is more uniform, which is more conducive to the heating of the wafer, thereby improving the heating effect and heating efficiency.

[0077] It should also be noted that, in this embodiment, the heat preservation barrel 400 and the process door 200 are relatively rotatable, and the heat preservation barrel 400 drives the wafer boat 500 to rotate by rotating, so that the wafers are heated more evenly. Therefore, in this embodiment, there is a gap between the housing 10 and the heat preservation barrel 400, and there is also a gap between the connecting member 40 and the heat preservation barrel 400, so as to avoid friction or collision between the auxiliary heating device 300 and the heat preservation barrel 400.

[0078] It can be understood that in this embodiment, while the heat preservation barrel 400 supports the crystal boat 500, a storage space for accommodating the shell 10 is formed between it and the crystal boat 500. For example, a support column can be provided on the heat preservation barrel 400, and a storage space is formed on the bottom of the crystal boat through the support column to avoid friction or collision between the auxiliary heating device 300 and the crystal boat 500.

[0079] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An auxiliary heating device for semiconductor heat treatment equipment, the auxiliary heating device is used to heat the area near the process door (200) inside the semiconductor heat treatment equipment, characterized in that: The auxiliary heating device comprises: A housing (10), wherein the housing (10) has a mounting cavity; A heating element (20), the heating element (20) being arranged in the installation cavity; A cable (30), the cable (30) being connected to the heating element (20), the cable (30) being used to connect to a power source; A connector (40), the connector (40) being connected to the housing (10), the connector (40) being used to connect the semiconductor heat treatment equipment, the connector (40) having a wiring channel (411) communicating with the installation cavity, the cable (30) being inserted into the wiring channel (411).

2. The auxiliary heating device according to claim 1, characterized in that: The heating element (20) has a conductive strip (21), and the conductive strip (21) extends in a rotating or circuitous manner on a plane to form a labyrinth structure, wherein the plane is a radial plane of a reaction chamber (110) of the semiconductor heat treatment equipment.

3. The auxiliary heating device according to claim 1, characterized in that: The housing (10) comprises: A tray (11), the tray (11) being connected to the connecting member (40), and the heating member (20) being arranged in the tray (11); A cover plate (12), wherein the cover plate (12) is arranged on the tray (11), and the cover plate (12) and the tray (11) form a closed installation cavity.

4. The auxiliary heating device according to claim 3, characterized in that: The tray (11) is provided with a supporting portion (111), and a plurality of stoppers (112) are arranged at intervals on the supporting portion (111); The heating element (20) is arranged on the supporting portion (111), and the heating element (20) has a conductive strip (21). The conductive strip (21) extends in a rotating or circuitous manner on a plane to form a labyrinth structure with a gap (22), and the stopper (112) is located in the gap (22).

5. The auxiliary heating device according to claim 4, characterized in that: The auxiliary heating device also includes: A temperature detection device (50), the temperature detection device (50) comprising a temperature measuring portion (521) for detecting the temperature of the heating element (20); The support portion (111) is arranged at the bottom of the tray (11), an installation space is formed between the heating element (20) and the bottom of the tray (11), and the temperature measuring portion (521) is located in the installation space.

6. The auxiliary heating device according to claim 5, characterized in that: A connecting hole (113) is provided at the bottom of the tray (11), and the wiring channel (411) is in communication with the connecting hole (113); The end (211) of the conductive belt (21) is located at the connection hole (113), the end (211) of the conductive belt (21) is bent toward the inside of the connection hole (113), and the cable (30) is connected to the end (211) of the conductive belt (21).

7. The auxiliary heating device according to claim 1, characterized in that: The connecting member (40) comprises: A connecting pipe (41), wherein the wiring channel (411) is formed in the connecting pipe (41), and a first end of the connecting pipe (41) is connected to the housing (10); A sealing plug (42), wherein the sealing plug (42) is plugged into the second end of the connecting tube (41), at least a portion of the sealing plug (42) is located in the wiring channel (411), a wiring hole (421) is provided on the sealing plug (42), the wiring channel (411) is communicated with the wiring hole (421), and the cable (30) is passed through the wiring hole (421) and extends to the outside of the connecting tube (41).

8. The auxiliary heating device according to claim 7, characterized in that: The connecting pipe (41) comprises a main body section (412) and a connecting section (413); the main body section (412) is connected to a first end of the main body section (412); the main body section (412) is connected to the shell (10) via the connecting section (413); the pipe diameter of the connecting section (413) is larger than the pipe diameter of the main body section (412); and a first step structure (414) is formed at the connection position between the main body section (412) and the connecting section (413).

9. The auxiliary heating device according to claim 8, characterized in that: A first limiting boss (415) is provided on the outer peripheral wall of the connecting tube (41), and the first limiting boss (415) is used for limiting the axial position of the connecting tube (41).

10. A semiconductor heat treatment device, characterized in that: include: A reaction chamber (110) having an open structure; A process door (200) is arranged at the position of the opening structure and is used to seal the reaction chamber (110); According to any one of claims 1 to 9, the auxiliary heating device (300) is arranged at the position of the process door (200), and the auxiliary heating device (300) is used to heat the area inside the reaction chamber (110) close to the process door (200).

11. The semiconductor heat treatment equipment according to claim 10, characterized in that: The auxiliary heating device (300) comprises: A shell (10), the shell (10) being arranged in the reaction chamber (110) at a position close to the process door (200), and the shell (10) having an installation cavity; A heating element (20), wherein the heating element (20) is arranged in the installation cavity; A cable (30), the cable (30) being connected to the heating element (20), the cable (30) being used to connect to a power source; A connecting piece (40), wherein the connecting piece (40) passes through the process door (200), a portion of the connecting piece (40) is located in the reaction chamber (110), and a portion of the connecting piece (40) is located outside the semiconductor heat treatment equipment; The portion of the connector (40) located in the reaction chamber (110) is connected to the shell (10), and the connector (40) has a wiring channel (411), one end of the wiring channel (411) is connected to the installation cavity, and the other end of the wiring channel (411) is connected to the outside of the semiconductor heat treatment equipment, and the cable (30) is inserted into the wiring channel (411) and extends to the outside of the semiconductor heat treatment equipment.

12. The semiconductor heat treatment equipment according to claim 11, characterized in that: When the connecting member (40) comprises a connecting pipe (41), The connecting tube (41) is passed through the process door (200), and a first limiting boss (415) is provided on the outer peripheral wall of the connecting tube (41), and the first limiting boss (415) cooperates with the process door (200) to limit the axial displacement of the connecting tube (41); or When the connecting member (40) comprises a connecting pipe (41) and a sealing plug (42), The connecting tube (41) is passed through the process door (200), and a first limiting boss (415) is provided on the outer peripheral wall of the connecting tube (41), and the first limiting boss (415) cooperates with the process door (200) to limit the axial displacement of the connecting tube (41); The sealing plug (42) is inserted into the second end of the connecting tube (41), at least a portion of the sealing plug (42) is located in the wiring channel (411), a wiring hole (421) is provided on the sealing plug (42), the wiring channel (411) is communicated with the wiring hole (421), and the cable (30) is passed through the wiring hole (421) and extends to the outside of the connecting tube (41).

13. The semiconductor heat treatment equipment according to claim 12, characterized in that: A buffer pad (43) is provided on the outer peripheral wall of the connecting pipe (41), and the buffer pad (43) is arranged between the first limiting boss (415) and the process door (200).

14. The semiconductor heat treatment equipment according to claim 11, characterized in that: Also includes: A heat preservation barrel (400), wherein a first end of the heat preservation barrel (400) is connected to the process door (200), and a second end of the heat preservation barrel (400) is used to support a wafer boat (500); The shell (10) is located at the second end of the heat preservation barrel (400), and the connecting member (40) is arranged to axially penetrate the heat preservation barrel (400).

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