6G reconfigurable multi-passband modulation filter device of SSPP

Abstract

The invention provides a 6G reconfigurable multi-passband modulation filter device of SSPP, and the top design structure comprises a first CPW structure, a first conversion structure, an active SSPP waveguide unit structure, a second conversion structure, and a second CPW structure which are disposed along the propagation direction of electromagnetic waves. Wherein the first conversion structure and the second conversion structure are sawtooth transition zone structures provided with a plurality of sawteeth at intervals, the depths of the sawteeth in the sawtooth transition zone structures are gradually increased towards the direction of the active SSPP waveguide unit structure, and the active SSPP waveguide unit structure comprises a plurality of active SSPP units connected in series. Each active SSPP unit comprises an H-shaped waveguide and two resonance units which are respectively arranged in the vertical direction of the H-shaped waveguide, each resonance unit is obtained by connecting two split rings through a variable capacitance diode, and regulation and control of double passbands and three passbands can be realized by changing the capacitance value of the variable capacitance diode; and a 2FSK signal modulation function can be realized in a coding state by introducing digital coding.

Description

Technical Field

[0001] The present invention relates to the field of 6G communications, and in particular to a 6G reconfigurable multi-passband modulation filter device of SSPP. Background Art

[0002] With the rapid development of 6G communication technology, communication systems have put forward higher requirements on the processing capabilities of high-frequency signals. As a core component in modern communication systems and integrated circuits, the performance of filters has a decisive influence on the operating efficiency of the system. In order to extract specific frequency components from complex frequency signals and improve the selectivity and anti-interference ability of communication channels, the design and optimization of filters are particularly important.

[0003] Artificial surface plasmon polaritons (SSPP) technology is a new electromagnetic wave transmission mechanism that excites pseudo surface plasma waves by constructing an artificial surface in a subwavelength structure. SSPP technology can effectively break through the diffraction limit of traditional light waves and show excellent performance in the microwave and terahertz frequency bands. By regulating the parameters of the artificial surface structure, the SSPP device can achieve flexible adjustment of the transmission frequency.

[0004] However, most existing SSPP devices are passive structures, and their functions are fixed after manufacturing, making it difficult to achieve dynamic adjustment, which limits their application in complex communication environments. Specifically, due to the limitations of structural design, traditional multi-band filters can usually only support a fixed number of passbands and frequency ranges, and lack reconfigurable capabilities. For example, the patent with publication number CN115911795A discloses a substrate-integrated artificial surface plasmon multi-band filter, which achieves two passband effects of 7.4-9.05GHz and 10.01-12.5GHz through a number of interdigitated metal slot structures symmetrically arranged on both sides. However, due to the limitation of the cutoff frequency of the dispersion curve of the slot structure, the passband is narrow, and it is a passive device that cannot achieve reconfigurable effects, which limits the flexibility of the filter. In addition, the fixed performance of traditional filters leads to insufficient adaptability when facing the needs of multi-frequency signal processing. In addition, the frequency regulation process is often accompanied by high transmission losses, making it difficult to simultaneously meet the requirements of 6G communication systems for high performance and high flexibility.

[0005] In other words, the functions of the multi-passband filters currently on the market are fixed and lack flexibility. Most of the existing multi-passband filters are passive structures, and their passband number and frequency range have been solidified after manufacturing, making it difficult to dynamically adjust according to actual needs. This design limits its ability to flexibly cope with multi-frequency signal processing in a changing communication environment. Although some studies have introduced active components such as variable capacitance diodes to achieve frequency regulation, the frequency reconstruction capabilities of existing technologies are still limited. For example, multi-passband filters are weak in the ability to expand the number of passbands and dynamically regulate bandwidth, making it difficult to meet the requirements of 6G communication systems for multi-functionality and high adaptability.

[0006] Therefore, developing a multi-passband filter device that can achieve dynamic reconstruction has become an important issue in the development of 6G communication technology. Summary of the invention

[0007] The purpose of the present invention is to provide a 6G reconfigurable multi-passband modulation filter device of SSPP, which introduces a digital coding state and uses the varactor diode state to adjust the SSPP dispersion characteristics, thereby realizing a multi-passband filtering function and realizing a 2FSK modulation signal function in the coding state.

[0008] To achieve the above objectives, the present technical solution provides a 6G reconfigurable multi-passband modulation filter device of SSPP, comprising: Dielectric base layer; A top-level design structure arranged on the top surface of the dielectric base layer includes a first CPW structure, a first conversion structure, an active SSPP waveguide unit structure, a second conversion structure, and a second CPW structure arranged along the propagation direction of the electromagnetic wave, wherein the first conversion structure and the second conversion structure are sawtooth transition band structures in which a plurality of sawtooths are arranged at intervals, and the depths of the plurality of sawtooths in the sawtooth transition band structure gradually increase toward the direction of the active SSPP waveguide unit structure, and the active SSPP waveguide unit structure includes a plurality of active SSPP units connected in series, each active SSPP unit includes an H-shaped waveguide and two resonant units arranged in the upper and lower directions of the H-shaped waveguide, and each resonant unit is obtained by connecting two split rings through a variable capacitance diode; A feeding structure is arranged on the back of the dielectric substrate, wherein the feeding structure is connected to each variable capacitance diode through a through hole.

[0009] The 6G reconfigurable multi-passband modulation filter device of SSPP provided in this solution can realize dual-passband and triple-passband regulation by changing the capacitance value of the variable capacitance diode, and by introducing digital coding, the 2FSK modulation signal function can be realized in the coding state.

[0010] Compared with the prior art, this technical solution has the following characteristics and beneficial effects: This scheme proposes a 6G reconfigurable multi-passband modulation filter device of SSPP. The 6G reconfigurable multi-passband modulation filter device of SSPP introduces a digital coding state and uses a variable capacitance diode to adjust the SSPP dispersion characteristics. It can realize multi-passband filtering function and realize 2FSK modulation signal function in the coding state. The device can flexibly select dual passband and triple passband, the transmission loss is less than 2.68 dB, the stopband suppression capability is above -20 dB, it has a low transmission coefficient and good stopband suppression performance, can effectively separate signals and select frequencies, and is suitable for complex signal environments.

[0011] In addition, after the introduction of the coding function, the various functional switching of the device can be flexibly controlled by the preset digital code or external input voltage, which can realize the flexible switching of 2FSK modulation signals and meet the application requirements of multi-channel communication systems or those that need to process multi-frequency signals. This technology solves the high-frequency modulation problem in microwave communication and provides a basis for the realization of artificial surface communication systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram of the SSPP unit structure of a 6G reconfigurable multi-passband modulation filter device of the SSPP designed by the present invention.

[0013] Figure 2 It is a schematic diagram of an SSPP unit equivalent circuit of a 6G reconfigurable multi-passband modulation filter device of SSPP designed by the present invention.

[0014] Figure 3 It is a dispersion curve diagram of an SSPP unit of a 6G reconfigurable multi-passband modulation filter device of the SSPP designed by the present invention.

[0015] Figure 4 It is a structural schematic diagram of a 6G reconfigurable multi-passband modulation filter device of SSPP designed by the present invention.

[0016] Figure 5 The invention is a dual-passband filter S of a 6G reconfigurable multi-passband modulation filter device of SSPP designed by the present invention. 21 Parameter simulation diagram.

[0017] Figure 6 The invention is a 6G reconfigurable multi-passband modulation filter device of SSPP designed in the present invention. C v = 0.12pF at 11.8GHz, 13.9GHz and 16.8GHz.

[0018] Figure 7 The invention is a 6G reconfigurable multi-passband modulation filter device of SSPP with three-passband filtering. 21Parameter simulation diagram.

[0019] Figure 8 The invention is a 6G reconfigurable multi-passband modulation filter device of SSPP designed in the present invention. C v1 = 0.08pF and C v2 = 0.56pF Electric field distribution at different frequencies.

[0020] Fig. 9 This is a modulation signal principle framework diagram of a 6G reconfigurable multi-passband modulation filter device of SSPP designed by the present invention.

[0021] Fig.10 This is the electric field distribution diagram of 14.1 GHz under two coding states of a 6G reconfigurable multi-passband modulation filter device of SSPP designed by the present invention.

[0022] Fig.11 The invention is a 6G reconfigurable multi-passband modulation filter device of SSPP designed by the present invention for 2FSK modulation under different digital signals.

[0023] Fig.12 It is a schematic diagram of the processing of a 6G reconfigurable multi-passband modulation filter device of SSPP designed by the present invention.

[0024] Fig.13 The invention is a 6G reconfigurable multi-passband modulation filter device of SSPP designed in the present invention. C v = 0.12pF when S 21 parameter.

[0025] Fig.14 The invention is a 6G reconfigurable multi-passband modulation filter device of SSPP designed in the present invention. C v1 = 0.08pF and C v2 = 0.56pF when S 21 parameter. DETAILED DESCRIPTION

[0026] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0027] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0028] Embodiment 1 like Figure 4 As shown, the technical solution provides a 6G reconfigurable multi-passband modulation filter device of SSPP, including: Dielectric base layer; A top-level design structure arranged on the top surface of the dielectric base layer includes a first CPW structure, a first conversion structure, an active SSPP waveguide unit structure, a second conversion structure, and a second CPW structure arranged along the propagation direction of the electromagnetic wave, wherein the first conversion structure and the second conversion structure are sawtooth transition band structures in which a plurality of sawtooths are arranged at intervals, and the depths of the plurality of sawtooths in the sawtooth transition band structure gradually increase toward the direction of the active SSPP waveguide unit structure, and the active SSPP waveguide unit structure includes a plurality of active SSPP units connected in series, each active SSPP unit includes an H-shaped waveguide and two resonant units arranged in the upper and lower directions of the H-shaped waveguide, and each resonant unit is obtained by connecting two split rings through a variable capacitance diode; A feeding structure is arranged on the back of the dielectric substrate, wherein the feeding structure is connected to each variable capacitance diode through a through hole.

[0029] It should be noted that the active SSPP unit in the 6G reconfigurable multi-passband modulation filter device of the SSPP is different from the traditional SSPP unit structure. A variable capacitance diode and a corresponding external bias circuit are introduced into the active SSPP unit to achieve the effect of coding modulation function.

[0030] The specific structure of each active SSPP unit is as follows: Figure 1 As shown, the active SSPP unit is composed of an H-shaped waveguide, a first resonance unit located above the H-shaped waveguide, and a second resonance unit located below the H-shaped waveguide, wherein the first resonance unit and the second resonance unit are symmetrical with respect to the center of the H-shaped waveguide. Specifically, the H-shaped waveguide includes a first vertical bar and a second vertical bar of the same length arranged in parallel, and the middle positions of the first vertical bar and the second vertical bar are connected by a first horizontal bar, wherein the first resonance unit and the second resonance unit are symmetrically arranged with respect to the first horizontal bar.

[0031] The first resonant unit and the second resonant unit have the same structure, and the two split rings in each resonant unit are staggered in a forked manner, and the two split rings are connected by a variable capacitance diode. Specifically, each resonant unit includes a first split ring and a second split ring, wherein the first split ring and the second split ring both include split ring vertical bars and a plurality of split ring horizontal bars vertically arranged relative to the split ring vertical bars, the split ring horizontal bars at the top of the first split ring and the second split ring are arranged on the same horizontal line and connected by a variable capacitance diode, the split ring horizontal bars at other positions of the first split ring and the second split ring are staggered and arranged in parallel, and the split ring horizontal bars at other positions of the first split ring are spaced apart from the split ring vertical bars of the second split ring, and the split ring horizontal bars at other positions of the second split ring are spaced apart from the split ring vertical bars of the first split ring. It is worth mentioning that the variable capacitance diodes in the first resonant unit and the second resonant unit are located at the position farthest from the first horizontal bar of the H-shaped waveguide.

[0032] In some specific embodiments, the split ring horizontal bars at other positions of the first split ring and the second split ring are arranged at equal intervals from each other, that is, the multiple split ring horizontal bars arranged in staggered parallel manner are arranged at equal distances.

[0033] In some specific embodiments, the top of the first resonance unit is flush with the tops of the first vertical bar and the second vertical bar of the H-shaped waveguide, and the bottom of the first resonance unit is spaced apart from the first horizontal bar of the H-shaped waveguide; the top of the second resonance unit is flush with the tops of the first vertical bar and the second vertical bar of the H-shaped waveguide, and the bottom of the second resonance unit is spaced apart from the first horizontal bar of the H-shaped waveguide.

[0034] It should be emphasized that in the active SSPP unit designed in this scheme, a unique resonant resonance unit is formed by loading a variable capacitance diode between two split rings, and the resonance unit enables the two split rings to be closely connected through the variable capacitance diode to achieve resonance. The active SSPP unit breaks through the constraints of the physical parameters of passive plasma devices, lays a good foundation for the active SSPP waveguide unit structure and modulation system, and has better practical performance.

[0035] The equivalent circuit of the active SSPP unit is as follows: Figure 2 As shown, in the circuit model, L 1 and L 2 represents the inductance generated by the current on the metal surface, C 1 represents the coupling capacitance between the first resonant unit and the second resonant unit, C 2 represents the self-capacitance formed by the first resonant unit and the second resonant unit, where C 2 is the variable capacitance in the variable capacitance diode controlled by the external bias circuit, according to the center frequency f The calculation formula , to better design the real-time modulation function of the filter.

[0036] Since the electrical response between the two split rings changes the resonance regulation of the entire resonant unit, the dispersion curve of the active SSPP unit of this scheme is dynamically adjusted as the variable capacitance diode changes.

[0037] Specifically, Figure 3 As shown in the figure, in a symmetrical coplanar waveguide (CPW) structure, only modes 1 and 3 are excited, and three capacitance values ​​are applied to the variable capacitance diode. As the phase kp / π increases, the dispersion curves of modes 1 and 3 gradually tend to a constant value, forming a cutoff frequency. In mode 1, the reduction of capacitance will lead to an increase in the cutoff frequency. The gap between modes 1 and 3 (corresponding to Figure 3 The gray part of the filter forms the filter stop band, and the cut-off frequency range can be flexibly adjusted between 10.8-18.02 GHz.

[0038] In some embodiments, the first CPW structure and the second CPW structure of the 6G reconfigurable multi-passband modulation filter device of the SSPP are arranged relative to the active SSPP waveguide unit structure.

[0039] like Figure 4 As shown, the first CPW structure includes a metal conductive strip connected to the first conversion structure and ground conductive strips located on both sides of the metal conductive strip, wherein the ground conductive strip is arranged closely to the metal conductive strip and the ground conductive strips located on both sides of the metal conductive strip are arranged symmetrically relative to the metal conductive strip.

[0040] Similarly, the second CPW structure includes a metal conductive strip connected to the second conversion structure and ground conductive strips on both sides of the metal conductive strip, wherein the ground conductive strip is arranged closely to the metal conductive strip and the ground conductive strips on both sides of the metal conductive strip are arranged symmetrically relative to the metal conductive strip.

[0041] In a specific embodiment, the first CPW structure is 50Ω, and the symmetrical design of the first CPW structure itself can excite the fundamental mode (mode 1) and the high-order mode (mode 3), which plays a key role in the stopband of the filter.

[0042] Similarly, the first conversion structure and the second conversion structure of the 6G reconfigurable multi-passband modulation filter device of SSPP are arranged relative to the active SSPP waveguide unit structure to support that the wave number of the conventional microstrip line of the quasi-transverse electromagnetic mode is not in the same phase as the wave number of the SSPP structure. The matching method adopted by the first conversion structure and the second conversion structure is a branch conversion structure with gradually increasing gradient length, which can effectively convert between the SSPP waveguide unit structure and the CPW microstrip line to excite the SSPP mode.

[0043] In addition, the active SSPP waveguide unit structure of the present scheme is obtained by connecting active SSPP units in series. It should be noted that the smaller the number of active SSPP units, the smaller the in-band fluctuation, but the out-of-band suppression capability also becomes lower accordingly. Increasing the number of active SSPP units can enhance the out-of-band suppression capability.

[0044] In some embodiments, in order to combine in-band fluctuation and out-of-band suppression capabilities, the number of active SSPP units is set to 4 to 7, preferably 6, which can help the filter have better plasma transmission and stronger out-of-band suppression capabilities.

[0045] In some embodiments, a feed structure of a bias circuit is disposed on the back of the filter, and a direct current (DC) voltage is applied to the variable capacitance diode through a through hole, wherein an inductor of 118uH can isolate the DC signal.

[0046] Fig.12 This is a physical picture of the 6G reconfigurable multi-passband modulation filter device of the SSPP of this solution. The first CPW structure and the second CPW structure of the 6G reconfigurable multi-passband modulation filter device of the SSPP are respectively welded with 50Ω RF connector SMA interfaces for signal input and output.

[0047] In addition, in some specific embodiments, Figure 1 and Figure 4 The parameters are a = 2.2, b = 0.4, c = 0.1, d =2, e = 1.8, r = 0.15, n = 4.7, L1= 7, L2= 28.025, L3= 28.2, L4= 13.72, S = 0.28, unit: mm.

[0048] Embodiment 2 Dual passband implementation When the 6G reconfigurable multi-passband modulation filter device of SSPP is required to achieve dual passband, a uniform bias voltage is applied to the variable capacitance diode in the 6G reconfigurable multi-passband modulation filter device of SSPP, wherein when the capacitance on the variable capacitance diode is smaller, the stopband position of the 6G reconfigurable multi-passband modulation filter device of SSPP moves toward the high frequency direction and the stopband bandwidth is widened, which is consistent with the gray bandgap in the dispersion curve.

[0049] Specifically, when the capacitance value of the variable capacitance diode on the 6G reconfigurable multi-passband modulation filter device of SSPP is different, the corresponding resonant frequency of the 6G reconfigurable multi-passband modulation filter device of SSPP will also change, and the stopband position will change. At this time, all the working stopbands respond within the passband range, and also show the effect of dual-passband filtering.

[0050] In some embodiments, the capacitance of the variable capacitance diode is adjusted between 0.3-0.34 pF under the control of an external bias voltage, and the center frequency of the stop band varies between 18.5-11.3 GHz. As the diode capacitance decreases, the center frequency of the stop band moves toward high frequency.

[0051] In some specific embodiments, Figure 5 As shown in FIG. 1 , when the capacitance values ​​Cv of the variable capacitance diode are 0.32pF, 0.12pF, and 0.06pF, respectively, the stopband frequencies of the corresponding SSPP 6G reconfigurable multi-passband modulation filter device are 10.8-12.64GHz, 13.23-14.96GHz, and 15.3-17.06GHz. 21 It can be seen from the parameter diagram that when SSPP's 6G reconfigurable multi-passband modulation filter device operates in the low-frequency band, the transmission coefficient of the passband gradually tends to be smooth, and the suppression capability when operating in the stopband range reaches -25dB. The transmission loss of the high-frequency passband is less than 1.5dB, the out-of-band suppression attenuation is steeper, and the suppression intensity is -35dB, ultimately forming a dynamically adjustable function of dual-passband filtering.

[0052] in addition, Figure 6 This is the simulated electric field distribution diagram at 11.8GHz, 13.9GHz, and 16.8GHz when the capacitance Cv of the variable capacitance diode is 0.12pF. It can be seen that these three frequency points are located at the low-frequency passband frequency, the stopband frequency, and the high-frequency passband frequency, respectively, reflecting the transmission performance of the SSPP 6G reconfigurable multi-passband modulation filter device within this range. In the low-frequency passband and high-frequency passband, the electric field can be smoothly transmitted through the entire plane, and in the stopband frequency, the electric field is blocked and cannot pass effectively. From the electric field diagram, it can be seen that the electric field energy is concentrated and bound around the plasma waveguide, which more intuitively and dynamically shows the working transmission effect of the filter.

[0053] Fig.13 When the filter realizes dual-pass filtering performance, C v = 0.12pF S 21 The measurement results show that the applied bias voltage is 12V. It can be seen from the black dotted line that the measured filter has two passband frequencies of 1.68GHz-13.18GHz and 14.9 GHz-19.98GHz, and the transmission coefficient of the passband can reach -1.68dB. The frequency of the stopband is 13.18GHz-14.9GHz, and the suppression capability can reach -22dB, which is consistent with the parameters of the electromagnetic simulation, and there is a certain controllable error.

[0054] Embodiment 3 Three-passband implementation When the 6G reconfigurable multi-passband modulation filter device of SSPP is required to realize three-passband, two different bias voltages are applied to the variable capacitance diodes in the 6G reconfigurable multi-passband modulation filter device of SSPP at the same time to change the capacitance of different variable capacitance diodes, and the 6G reconfigurable multi-passband modulation filter device of SSPP forms two stopbands and realizes the three-passband filtering function.

[0055] In some embodiments, when the 6G reconfigurable multi-passband modulation filter device of SSPP contains 6 active SSPP units, a first bias voltage is applied to the three active SSPP units on the left so that the variable capacitance diodes in the three active SSPP units on the left have a first capacitance value, and a second bias voltage is applied to the three active SSPP units on the right so that the variable capacitance diodes in the three active SSPP units on the right have a second capacitance value, wherein the first capacitance value and the second capacitance value are different. This configuration can generate two different resonant frequencies.

[0056] like Figure 7 As shown, the applicant team selected three sets of capacitance values ​​to demonstrate the real-time multi-passband reconstruction capability of SSPP's 6G reconfigurable multi-passband modulation filter device. C v1 = 0.06 pF / C v2 = 0.27 pF, C v1 =0.08 pF / C v2 = 0.56 pF, and C v1 = 0.12 pF / C v2 = 1.24 pF, the corresponding stopband frequency ranges are 15.3–17.06 GHz and 10.96–12.04 GHz, 14.54–16.08 GHz and 9.08–10.33 GHz, and 13.23–14.96 GHz and 8.76–9.65 GHz, respectively. C v1 is the first capacitance value, C v2 For the second capacitance value, the resonance generated by loading two sets of capacitance values ​​has little effect on the transmission loss, the passband transmission coefficient is -2.67 dB, and the stopband suppression capability remains strong, reaching -25 dB. This shows that using multiple capacitance values ​​can significantly improve the performance of the filter and support subsequent coding modulation functions.

[0057] Selecting capacitors C v1 = 0.08pF, Cv2 = 0.56pF, set the electric field monitor at three frequency points: 10.2GHz, 12.5GHz, and 15.4GHz, where the three frequency points are the band stop frequency, passband frequency, and band stop frequency. Figure 8 From the electric field distribution, it can be seen that when the frequency is 10.2 GHz and 15.4 GHz, the electric field energy cannot be completely transmitted and begins to be blocked in the plasma waveguide unit; when the frequency is 12.5 GHz, the electric field energy can be perfectly transmitted in the filter, the energy gathers around the plasma waveguide, and mainly propagates in the dielectric and metal layers.

[0058] Figure 14 shows the filter selecting two sets of capacitors when achieving three-way filtering performance. C v1 = 0.08pF, C v2 = 0.56pF S 21 The measured results show that the DC voltages in the corresponding bias circuits are 3.7V and 14V respectively. As can be seen from the black dotted line, the filter has three passband frequencies at this time, and the measured passband transmission coefficient is -2.82dB. The suppression capability of the two stopbands is -3.68dB worse than the simulation result, and can reach -20dB, which is also quite impressive. The overall performance parameters of the filter are relatively good, and the error between the measurement and simulation is also within the allowable range, because the welding port, processing wear and substrate thickness error have a certain impact on the results.

[0059] Example 4 2 FSK modulation function implementation According to the carrier signal frequency that needs to be switched, different bias voltages are applied to the variable capacitance diodes in the 6G reconfigurable multi-passband modulation filter device of SSPP using digital signals to change the capacitance of different variable capacitance diodes.

[0060] Specifically, the first bias voltage group and the second bias voltage group are determined according to the first carrier signal frequency and the second carrier signal frequency that need to be switched, wherein the first carrier signal frequency corresponds to the first bias voltage group, and the second carrier signal frequency corresponds to the second bias voltage group; the switching of the first bias voltage group and the second bias voltage group is regulated by a digital signal, and the corresponding first bias voltage group or second bias voltage group is applied to the variable capacitance diode code in the 6G reconfigurable multi-passband modulation filter device of the SSPP.

[0061] As mentioned above, when the active SSPP units of the 6G reconfigurable multi-passband modulation filter device of SSPP are grouped and loaded with different capacitance values, the 6G reconfigurable multi-passband modulation filter device of SSPP will resonate to produce different stopbands. Therefore, the bias voltage group programming can effectively realize the diversification of band signal selection, and the baseband signal is regulated by encoding the 6G reconfigurable multi-passband modulation filter device of SSPP, thereby realizing the frequency switching of the carrier signal at different frequencies, thereby realizing the frequency modulation of 2FSK, such as Fig. 9 shown.

[0062] Taking the carrier signal of 14.1 GHz and 16.8 GHz as an example, the implementation scheme of performing 2FSK modulation on the signal by encoding is as follows: C v1 = 0.12pF, C v2 = 1.24pF is "0" state, C v1 = 0.06pF, C v2 = 0.27pF is in the "1" state. The two states are controlled by digital signals. When the baseband signal is in the "0" state, the carrier signal with a frequency of 14.1GHz cannot be transmitted through the digital signal and is in a blocking state, while the carrier signal with a frequency of 16.8GHz can be transmitted through the digital signal and is in a conducting state. When the baseband signal is in the "1" state, the carrier signal with a frequency of 14.1GHz can be perfectly transmitted through the digital signal and is in a conducting state, while the carrier signal with a frequency of 16.8GHz cannot be transmitted through the digital signal and is in a blocking state. The electric field distribution of 14.1GHz in the two coding states is shown in Figure 1. Fig.10 shown.

[0063] The 2FSK modulation system functions are realized under the modulation of digital signals. Fig.11 In fact, since the stopband position is determined by the bias voltage of the varactor diode, 2FSK modulation can be achieved by selecting a suitable bias voltage value for encoding definition according to the actual conditions of the two carrier signal frequencies, rather than being limited to 14.1 GHz and 16.8 GHz, thereby improving flexibility and practical value.

[0064] Fig.14 When the filter realizes the three-way filtering performance, two sets of capacitors are selected. C v1 = 0.08pF, C v2 = 0.56pF S 21The measured results show that the DC voltages in the corresponding bias circuits are 3.7V and 14V respectively. As can be seen from the black dotted line, the filter has three passband frequencies at this time, and the measured passband transmission coefficient is -2.82dB. The suppression capability of the two stopbands is -3.68dB worse than the simulation result, and can reach -20dB, which is also quite impressive. The overall performance parameters of the filter are relatively good, and the error between the measurement and simulation is also within the allowable range, because the welding port, processing wear and substrate thickness error have a certain impact on the results.

[0065] Those skilled in the art should understand that the technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0066] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A 6G reconfigurable multi-passband modulation filter device of SSPP, characterized in that: include: Dielectric base layer; A top-level design structure arranged on the top surface of the dielectric base layer includes a first CPW structure, a first conversion structure, an active SSPP waveguide unit structure, a second conversion structure, and a second CPW structure arranged along the propagation direction of the electromagnetic wave, wherein the first conversion structure and the second conversion structure are sawtooth transition band structures in which a plurality of sawtooths are arranged at intervals, and the depths of the plurality of sawtooths in the sawtooth transition band structure gradually increase toward the direction of the active SSPP waveguide unit structure, and the active SSPP waveguide unit structure includes a plurality of active SSPP units connected in series, each active SSPP unit includes an H-shaped waveguide and two resonant units arranged in the upper and lower directions of the H-shaped waveguide, and each resonant unit is obtained by connecting two split rings through a variable capacitance diode; A feeding structure is arranged on the back of the dielectric substrate, wherein the feeding structure is connected to each variable capacitance diode through a through hole.

2. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 1, characterized in that: The active SSPP unit consists of an H-shaped waveguide, a first resonance unit located above the H-shaped waveguide, and a second resonance unit located below the H-shaped waveguide, wherein the H-shaped waveguide includes a first vertical bar and a second vertical bar of the same length arranged in parallel, and the middle positions of the first vertical bar and the second vertical bar are connected by a first horizontal bar, wherein the first resonance unit and the second resonance unit are symmetrically arranged relative to the first horizontal bar.

3. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 2, characterized in that: The top of the first resonance unit is flush with the top of the first vertical bar and the second vertical bar of the H-shaped waveguide, and the bottom of the first resonance unit is spaced apart from the first horizontal bar of the H-shaped waveguide; the top of the second resonance unit is flush with the top of the first vertical bar and the second vertical bar of the H-shaped waveguide, and the bottom of the second resonance unit is spaced apart from the first horizontal bar of the H-shaped waveguide.

4. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 1, characterized in that: The first resonance unit and the second resonance unit have the same structure, each resonance unit includes a first split ring and a second split ring, wherein the first split ring and the second split ring both include split ring vertical bars and a plurality of split ring horizontal bars perpendicularly arranged relative to the split ring vertical bars, the split ring horizontal bars located at the top of the first split ring and the second split ring are located on the same horizontal line and are connected through a variable capacitance diode, the split ring horizontal bars located at other positions of the first split ring and the second split ring are alternately arranged in parallel, and the split ring horizontal bars located at other positions of the first split ring are spaced apart from the split ring vertical bars of the second split ring, and the split ring horizontal bars located at other positions of the second split ring are spaced apart from the split ring vertical bars of the first split ring.

5. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 1, characterized in that: The capacitance of the variable capacitance diode is adjusted between 0.3-0.34 pF under the control of an external bias voltage, and the center frequency of the stop band varies between 18.5-11.3 GHz. As the diode capacitance decreases, the center frequency of the stop band moves toward a high frequency direction.

6. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 1, characterized in that: When the 6G reconfigurable multi-passband modulation filter device of SSPP is required to achieve dual passbands, a uniform bias voltage is applied to the variable capacitance diode in the 6G reconfigurable multi-passband modulation filter device of SSPP.

7. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 1, characterized in that: When the 6G reconfigurable multi-passband modulation filter device of SSPP is required to realize three passbands, two different bias voltages are applied to the variable capacitance diode in the 6G reconfigurable multi-passband modulation filter device of SSPP at the same time.

8. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 1, characterized in that: When the 6G reconfigurable multi-passband modulation filter device of SSPP contains 6 active SSPP units, a first bias voltage is applied to the three active SSPP units on the left so that the variable capacitance diodes in the three active SSPP units on the left have a first capacitance value, and a second bias voltage is applied to the three active SSPP units on the right so that the variable capacitance diodes in the three active SSPP units on the right have a second capacitance value, wherein the first capacitance value and the second capacitance value are different.

9. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 1, characterized in that: According to the carrier signal frequency that needs to be switched, different bias voltages are applied to the variable capacitance diodes in the 6G reconfigurable multi-passband modulation filter device of SSPP using digital signals to change the capacitance of different variable capacitance diodes.

10. The 6G reconfigurable multi-passband modulation filter device of SSPP according to claim 9, characterized in that: The first bias voltage group and the second bias voltage group are determined according to the first carrier signal frequency and the second carrier signal frequency that need to be switched, wherein the first carrier signal frequency corresponds to the first bias voltage group, and the second carrier signal frequency corresponds to the second bias voltage group. The switching of the first bias voltage group and the second bias voltage group is regulated by a digital signal, and the corresponding first bias voltage group or second bias voltage group is applied to the variable capacitance diode code in the 6G reconfigurable multi-passband modulation filter device of the SSPP.

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