High-side intelligent electronic switch, chip, chip product, electromechanical device and method

Abstract

The invention provides a high-side intelligent electronic switch. The high-side intelligent electronic switch comprises a power supply end, a power grounding end, a load output end and a switch control module, the first end of the power switch is connected with the power supply end, the second end of the power switch is connected with the load output end, the control end of the power switch is connected with the switch control module, and the switch control module is used for controlling the power switch to be turned on or turned off; the reverse judgment module is used for judging whether the voltage of the load output end is greater than the voltage of the power supply end; wherein the reverse judgment module is connected with the switch control module, and when the reverse judgment module judges that the voltage of the output end of the load is larger than the voltage of the power supply end of the power supply, the switch control module controls the reverse judgment module based on a signal of the reverse judgment module. And controlling the power supply end to be disconnected from a node associated with the parasitic current so as to block the flow of the parasitic current, so that the power switch can be turned on and turned on. The embodiment of the invention further provides a chip, a chip product, electromechanical equipment and a method.

Description

Technical Field

[0001] The present application relates to the field of intelligent semiconductor switches, and in particular to a high-side intelligent electronic switch, a chip, a chip product, an electromechanical device and a method. Background Art

[0002] The high-side smart electronic switch is usually used to couple the load with the battery, and is an electronic component that controls the on and off of the load line. The high-side smart electronic switch also has one or more diagnostic capabilities and protection features, such as protection against over-temperature, overload, over-current and short-circuit events. For example, the smart electronic switch has a power switch, and in the event of over-temperature, overload, over-current or short-circuit events, the power switch is disconnected, so that the path between the battery and the load is disconnected. Smart electronic switches are widely used in automotive electronics, industrial automation, medical equipment and other fields.

[0003] The high-side intelligent electronic switch includes a power supply end, a load output end, a power switch, and a switch control module. The first end of the power switch is connected to the positive electrode of the power supply via the power supply end, the second end of the power switch is connected to one end of the load via the load output end, and the other end of the load is connected to the negative electrode of the power supply. The switch control module is used to control whether the power switch is turned on. In this circuit structure, when the voltage at the load output end is greater than the voltage at the power supply end, the parasitic transistor in the switch control module may become turned on. When the power switch needs to be turned on for various reasons, for example, one of the reasons is to reduce the loss of the power switch caused by the reverse current, it may be impossible to control the power switch to be turned on, that is, whether the power switch is turned on is uncontrolled. Summary of the invention

[0004] The technical problem to be solved by the embodiments of the present application is to provide a high-side intelligent electronic switch, chip, chip product, electromechanical device and method to achieve controlled conduction of a power switch in view of the deficiencies of the prior art.

[0005] In order to solve the above technical problems, a first aspect of an embodiment of the present application provides a high-side intelligent electronic switch, including:

[0006] A power supply terminal, a power ground terminal, a load output terminal, and a switch control module, wherein the power supply terminal is used to connect to the positive electrode of the power supply, the power ground terminal is used to connect to the negative electrode of the power supply, and the load output terminal is used to connect to the load;

[0007] A power switch, a first end of which is connected to a power supply end, a second end of which is connected to a load output end, and a control end of which is connected to a switch control module, wherein the switch control module is used to control the power switch to be turned on or off;

[0008] A reverse judgment module, which is used to judge whether the voltage at the load output end is greater than the voltage at the power supply end;

[0009] Among them, the reverse judgment module is connected to the switch control module. When the reverse judgment module determines that the voltage at the load output end is greater than the voltage at the power supply end, the switch control module controls the node associated with the parasitic current at the power supply end to be disconnected based on the signal of the reverse judgment module to block the flow of parasitic current, so that the power switch can be turned on.

[0010] Optionally, the switch control module includes a blocking switch, the control end of the blocking switch is controlled by a reverse judgment module, when the reverse judgment module determines that the voltage at the load output end is greater than the voltage at the power supply end, the blocking switch is disconnected and cut off, when the reverse judgment module determines that the voltage at the load output end is not greater than the voltage at the power supply end, the blocking switch is turned on.

[0011] Optionally, the switch control module includes a conduction switch, a shutoff switch and a logic control unit, wherein a first end of the conduction switch is connected to the boost unit, a second end of the conduction switch is connected to the control end of the power switch, a first end of the shutoff switch is connected to the control end of the power switch, a second end of the shutoff switch is connected to the load output end, and the control end of the conduction switch and the control end of the shutoff switch are both connected to the logic control unit;

[0012] The node associated with the parasitic current includes the n-type buried layer itself or an end thereof, the on-switch and the off-switch are located in the n-type buried layer, and the n-type buried layer is located in the p-type substrate.

[0013] Optionally, the blocking switch is located in the n-type buried layer.

[0014] Optionally, the blocking switch is a MOS tube, a triode or a junction FET.

[0015] Optionally, the reverse judgment module includes a voltage comparator, a first end of the voltage comparator is connected to the load output end, a second end of the voltage comparator is connected to the power supply end, the output end of the voltage comparator is coupled to the control end of the blocking switch, and the voltage comparator determines whether the difference between the voltage at the load output end and the voltage at the power supply end is greater than a reference voltage, wherein the reference voltage is less than the turn-on threshold of the first parasitic transistor.

[0016] Optionally, the reverse judgment module includes a voltage comparator, a first end of the voltage comparator is connected to the load output end, a second end of the voltage comparator is connected to the power supply end, the output end of the voltage comparator is coupled to the control end of the blocking switch, and the voltage comparator determines whether the difference between the voltage at the load output end and the voltage at the power supply end is greater than a reference voltage, wherein the reference voltage is less than the turn-on threshold of the first parasitic transistor.

[0017] Optionally, the reference voltage ranges from 10mV to 100mV.

[0018] Optionally, when the result of subtracting the voltage of the power supply end from the voltage of the load output end is greater than the voltage of the power supply end, the reverse judgment module judges that the voltage of the load output end is greater than the voltage of the power supply end, wherein the reference voltage is greater than 0; or

[0019] When the result of subtracting the voltage of the power supply end from the voltage of the load output end is greater than or equal to the turn-on threshold of the parasitic diode of the power switch, the reverse judgment module determines that the voltage of the load output end is greater than the voltage of the power supply end.

[0020] A second aspect of an embodiment of the present application provides an integrated circuit chip, comprising the above-mentioned high-side intelligent electronic switch, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

[0021] Optionally, the power switch is a MOS tube, and three ends of the MOS tube of the intelligent electronic switch are located in the same plane.

[0022] A third aspect of the embodiments of the present application provides a chip product, including the above-mentioned high-side intelligent electronic switch, wherein the components of the high-side intelligent electronic switch except the power switch are located on a first integrated circuit chip, and the power switch is located on a second integrated circuit chip;

[0023] Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, the load output end is a load output pin, the first integrated circuit chip includes the power supply pin and the power ground pin, and the second integrated circuit chip includes the load output pin.

[0024] Optionally, three ends of the MOS tube of the first integrated circuit chip are located in the same plane.

[0025] A fourth aspect of the embodiments of the present application provides an electromechanical device, including the above-mentioned high-side intelligent electronic switch or the above-mentioned integrated circuit chip or the above-mentioned chip product;

[0026] It also includes a power supply, a load and a microprocessor, wherein the positive pole of the power supply is connected to the power supply terminal, the negative pole of the power supply is connected to the power ground terminal, one end of the load is connected to the load output terminal, the other end of the load is connected to the power ground terminal, and the microprocessor is connected to the intelligent electronic switch.

[0027] Optionally, the electromechanical device includes a car.

[0028] A fifth aspect of an embodiment of the present application provides a control method for a high-side intelligent electronic switch, including:

[0029] Determine whether the voltage at the load output end is greater than the voltage at the power supply end;

[0030] If the judgment result is yes, controlling the node associated with the parasitic current at the power supply end to be disconnected to block the flow of the parasitic current, so that the power switch can be turned on;

[0031] If the judgment result is no, the node of the power supply terminal associated with the parasitic current is controlled to be turned on.

[0032] In this embodiment, a reverse judgment module is additionally provided, and the reverse judgment module cooperates with the switch control module. When the reverse judgment module determines that the voltage at the load output end is greater than the voltage at the power supply end, the switch control module controls the power supply end to disconnect the node associated with the parasitic current based on the signal of the reverse judgment module, so that the parasitic transistor in the switch control module will not be continuously turned on, the parasitic current path between the control end of the power switch and the power supply end is disconnected, and the parasitic current path between the control end of the power switch and the power ground end is also disconnected. Therefore, when the voltage at the load output end is greater than the voltage at the power supply end and the power switch needs to be turned on, the voltage at the control end of the power switch will not be continuously pulled down due to the existence of the parasitic transistor, so that the power switch can be reliably controlled to be turned on and turned on, and the turning on and turning on of the power switch is controlled by the switch control module. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0034] Figure 1 is a circuit module diagram of an electromechanical device according to an embodiment of the present application;

[0035] Figure 2a is a circuit module diagram of a high-side intelligent electronic switch of the related art;

[0036] Figure 2b is a partial film layer cross-sectional view of a high-side smart electronic switch of the related art;

[0037] Figure 3a is a circuit module diagram of a high-side intelligent electronic switch according to an embodiment of the present application;

[0038] Figure 3bis a partial film layer cross-sectional view of a high-side intelligent electronic switch according to an embodiment of the present application;

[0039] Figure 4 is a schematic diagram of the connection between the reverse judgment module and the blocking switch according to an embodiment of the present application;

[0040] Figure 5 This is a flow chart of a control method for a high-side intelligent electronic switch according to an embodiment of the present application. DETAILED DESCRIPTION

[0041] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0042] The terms "including" and "having" and any variations thereof appearing in the specification, claims and drawings of this application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or modules is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units that are inherent to these processes, methods, products or devices. In addition, the terms "first", "second" and "third" are used to distinguish different objects, rather than to describe a specific order. The connection of this application includes direct connection and indirect connection. Indirect connection means that other electronic components, pins, etc. may exist between the two connected components. The XX end mentioned in this application may be an actual terminal, or it may not be an actual terminal, for example, it is only one end of a component or one end of a wire. The three situations mentioned and / or included in this application, such as A and / or B, include the three situations of A, B, A and B.

[0043] The present application embodiment provides an electromechanical device, such as an automobile, medical equipment, industrial automation equipment, aerospace equipment, etc. Figure 1The electromechanical device includes a power supply 110, a load 120, a microprocessor 300 and a high-side intelligent electronic switch 200. The power supply 110 is generally a battery, which is generally a storage battery. The storage battery provides voltages such as 12V, 24V, 36V, 48V, 60V, etc., and can also be other types of batteries or power supplies, such as AC / DC (alternating current / direct current) converters, DC / DC (direct current / direct current) converters, etc. The load 120 includes at least one of a resistive load, an inductive load and a capacitive load. The resistive load is, for example, a seat adjustment device, an auxiliary heating device, a window heating device, a light emitting diode (LED), a rear lighting or other resistive loads. The inductive load is, for example, a pump, an actuator, a motor, an anti-lock braking system (ABS), an electronic braking system (EBS), a fan or other systems including an inductive load for one or more wiper systems. The capacitive load is, for example, a lighting element, such as a xenon arc lamp, etc. In the figure, the load 120 is only illustrated by one element. The load 120 is usually a more complex load, such as a module or subsystem with a large number of components. The microprocessor 300 is connected to the intelligent electronic switch 200 to control the high-side intelligent electronic switch 200. At the same time, the high-side intelligent electronic switch 200 feeds back its state and related parameter information, such as related parameter information of diagnosis, current parameter information, voltage parameter information, etc., to the microprocessor 300 for processing.

[0044] In this embodiment, the high-side intelligent electronic switch 200 includes a power supply terminal VCC, a power ground terminal GND, and a load output terminal OUT, wherein the power supply terminal VCC is connected to the positive electrode of the power supply 110, the power ground terminal GND is connected to the negative electrode of the power supply 110, the load output terminal OUT is connected to one end of the load 120, and the other end of the load 120 is connected to the negative electrode of the power supply 110. In addition, in other embodiments of the present application, a reverse connection prevention diode and a current limiting resistor connected in parallel may be provided between the power ground terminal GND and the negative electrode of the power supply 110.

[0045] In this embodiment, the high-side intelligent electronic switch 200 further includes a power switch M1 and a switch control module 220. One end of the power switch M1 is connected in series with the load 120 via the load output terminal OUT, and the other end is connected to the power supply terminal VCC. The control end is connected to the switch control module 220, and the switch control module 220 is used to control whether the power switch M1 is turned on. In this embodiment, the power switch M1 is an NMOS tube, a PMOS tube, a junction FET or an IGBT, etc. The NMOS tube is used as an example for illustration in the figure. The power switch M1 can be implemented as a silicon device, or can be implemented using other semiconductor materials, such as silicon carbide (SiC), gallium arsenide (GaAs) or gallium nitride (GaN). In this embodiment, the power switch M1 is connected as a high-side switch, which is a switch connected between the power supply terminal VCC and the load 120.

[0046] Please refer to Figure 1 , Figure 2a and Figure 2b In the related art, the switch control module 220 includes a conducting switch M2, a shutoff switch M3 and a logic control unit 222. The first end of the conducting switch M2 is directly or indirectly connected to the boost unit 221, the second end of the conducting switch M2 is connected to the control end of the power switch M1, the control end of the conducting switch M2 is connected to the logic control unit 222, the first end of the shutoff switch M3 is connected to the control end of the power switch M1, the second end of the shutoff switch M3 is directly or indirectly connected to the load output end OUT, the control end of the shutoff switch M3 is connected to the logic control unit 222, and the conducting switch M2 and the shutoff switch M3 constitute a so-called totem pole driving circuit. Generally speaking, the conducting switch M2 is a PMOS tube, the shutoff switch M3 is an NMOS tube, the boost unit 221 is connected to the power supply end VCC, the boost unit 221 is a charge pump or other boosting element, and the output voltage of the boost unit 221 is greater than the voltage of the power supply end VCC.

[0047] In the above structure, when the voltage at the load output terminal OUT is greater than the voltage of the power supply 110 supplied by the power supply 110 due to some reasons, such as the reverse connection of the power supply 110, the effect of the inductance when the power switch M1 is turned off, etc., in this case, it may be desirable for the power switch to be turned on. For example, one situation is: due to the presence of the parasitic diode in the power switch M1, even when the power switch M1 is turned off, there may still be a reverse current from the load output terminal OUT to the power supply terminal VCC. When the reverse current occurs, in some cases, it is desirable for the power switch M1 to be turned on, such as reducing the heat caused by the flow of the reverse current in the parasitic diode in the power switch M1, thereby improving the reliability of the high-side intelligent electronic switch 200. However, since there is a parasitic transistor in the turn-off switch M3, when the voltage at the load output terminal OUT is greater than the voltage of the power supply 110 supplied by the power supply 110, the parasitic transistor may be turned on, which may result in the inability to effectively turn on the power switch M1.

[0048] For details, please refer to Figure 2a and Figure 2b , Figure 2b The cross-sectional film layer diagram of the on switch M2, the off switch M3 and the power switch M1 of the related art is shown. The intelligent electronic switch 200 includes a p-type substrate 411. A first n-type buried layer 412 (NBL) is formed on the p-type substrate 411. The on switch M2 and the off switch M3, that is, the PMOS tube and the NMOS tube in the figure, are formed in the first n-type buried layer 412. Specifically, a deep p-well 413 is formed in the first n-type buried layer 412, and then a first n-well 414 and a first p-well 415 are formed in the deep p-well 413. A first n+ doped region, a first p+ doped region, and a first second p+ doped region are formed in the first n-well 414. Doped region, a second n+ doped region, a second n+ doped region, and a second p+ doped region are formed in the first p-well 415, wherein the first p+ doped region (source) is coupled to the boost unit 221, the first second p+ doped region (drain) is connected to the control end of the power switch M1, the first n-well 414 is connected to the boost unit 221 via the first n+ doped region, the second n+ doped region (source) is connected to the load output end OUT, the second second n+ doped region (drain) is connected to the control end of the power switch M1, the second p+ doped region is connected to the load output end OUT, and the first p-well 415 is connected to the load output end OUT via the second p+ doped region. In the figure, a PMOS tube is formed in the first n-well 414, an NMOS tube is formed in the first p-well 415, the first n-type buried layer 412 is connected to the power supply end VCC, and the p-type substrate 411 is connected to the power ground end GND. Figure 2bIn the structure of the NMOS tube, there is a first parasitic transistor 223 (indicated by a dotted line in the figure) formed by the second n+ doped region, the first p-well 415, the deep p-well 413, and the first n-type buried layer 412, and a second parasitic transistor 224 (indicated by a dotted line in the figure) formed by the first p-well 415, the deep p-well 413, the first n-type buried layer 412, and the p-type substrate 411. The first parasitic transistor 223 is an npn-type transistor, and the second parasitic transistor 224 is a pnp-type Transistor, the base of the first parasitic transistor 223 is connected to the load output terminal OUT, the emitter of the first parasitic transistor 223 is connected to the power supply terminal VCC, the collector of the first parasitic transistor 223 is connected to the control terminal of the power switch M1, the base of the second parasitic transistor 224 is connected to the power supply terminal VCC, the emitter of the second parasitic transistor 224 is connected to the load output terminal OUT, and the collector of the second parasitic transistor 224 is connected to the power ground terminal GND. When the voltage at the load output terminal OUT is greater than the voltage at the power supply terminal VCC, especially when the result of the voltage at the load output terminal OUT minus the voltage at the power supply terminal VCC is greater than or equal to the turn-on threshold of the first parasitic transistor 223, the turn-on threshold of the second parasitic transistor 224 is the same as the turn-on threshold of the first parasitic transistor 223, which may cause the first parasitic transistor 223 and the second parasitic transistor 224 to be turned on. In this case, when the power switch M1 needs to be turned on, the logic control unit 222 controls the turn-on switch M2 to be turned on and controls the turn-off switch M3 to be turned off. However, since the first parasitic transistor 223 and the second parasitic transistor 224 may be continuously turned on, the first parasitic transistor 223 and the second parasitic transistor 224 may pull down the voltage at the control terminal of the power switch M1, thereby causing the power switch M1 to fail to turn on, which is undesirable.

[0049] In order to solve the above problems, in this embodiment, please refer to Figure 1 and Figure 3a , Figure 3b, the high-side intelligent electronic switch 200 also includes a reverse judgment module 230, which is used to judge whether the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC. The reverse judgment module 230 judges that the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC. In this embodiment, there are two situations: the first situation, the first parasitic transistor 223 is turned on, that is, the result of the voltage of the load output terminal OUT minus the voltage of the power supply terminal VCC is greater than or equal to the turn-on threshold of the first parasitic transistor. In this case, there may be a reverse current from the load output terminal OUT to the power supply terminal VCC; the second situation, the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC, and the result of the voltage of the load output terminal OUT minus the voltage of the power supply terminal VCC is less than the turn-on threshold of the first parasitic transistor 223, and the first parasitic transistor has not yet turned on. How to judge the two situations will be described in detail later.

[0050] In this embodiment, the reverse judgment module 230 is connected to the switch control module 220. When the reverse judgment module 230 determines that the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC, the reverse judgment module 230 outputs a control signal to the switch control module 220. The switch control module 220 controls the node associated with the power supply terminal VCC and the parasitic current to be disconnected to block the flow of the parasitic current, so that the power switch M1 can be turned on and conducted under the control of the logic control unit 222 as needed.

[0051] Specifically, in this embodiment, the switch control module 220 includes a blocking switch M5, a first end of the blocking switch M5 is connected to a node associated with the parasitic current, a second end of the blocking switch M5 is connected to the power supply terminal VCC, and a control end of the blocking switch M5 is connected to the reverse judgment module 230, and the reverse judgment module 230 controls whether the blocking switch M5 is turned on. When the reverse judgment module 230 determines that the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC, the reverse judgment module 230 controls the blocking switch M5 to be turned off, and at this time, the node associated with the parasitic current is not connected to the power supply terminal VCC; when the reverse judgment module 230 determines that the voltage of the load output terminal OUT is not greater than the voltage of the power supply terminal VCC, the reverse judgment module 230 controls the blocking switch M5 to be turned on, which is a default situation, and at this time, the node associated with the parasitic current is connected to the power supply terminal VCC, and at this time, the voltage of the node associated with the parasitic current is the same as the voltage of the power supply terminal VCC.

[0052] In this embodiment, the parasitic current refers to the current from the control end of the power switch M1 to the power supply end VCC and the current from the control end of the power switch M1 to the power ground end GND formed because the first parasitic transistor 223 and the second parasitic transistor 224 are turned on. The node associated with the parasitic current is the emitter of the first parasitic transistor 223, that is, the base of the second parasitic transistor 224. Therefore, when the blocking switch M5 is turned off, the path between the emitter of the first parasitic transistor 223 and the power supply end VCC is disconnected, and the path between the base of the second parasitic transistor 224 and the power supply end VCC is disconnected. When the blocking switch M5 is controlled to be turned on, the path between the emitter of the first parasitic transistor 223 and the power supply end VCC is turned on, and the path between the base of the second parasitic transistor 224 and the power supply end VCC is turned on. In this embodiment, the emitter of the first parasitic transistor 223 is the first n-type buried layer 412, that is, the base of the second parasitic transistor 224 is the first n-type buried layer 412, and the node associated with the parasitic current is the first n-type buried layer 412 itself or its end. In this embodiment, the blocking switch M5 is a MOS transistor, such as an NMOS transistor or a PMOS transistor. The PMOS transistor is used as an example for illustration in the figure. In other embodiments of the present application, the blocking switch M5 can also be a transistor, a junction FET, etc.

[0053] In this embodiment, when it is determined that the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC, the reverse judgment module 230 controls the blocking switch M5 to be turned off and cut off, and the node associated with the parasitic current may float. When the power switch M1 needs to be turned on, the logic control unit 222 controls the conduction switch M2 to be turned on and the turn-off switch M3 to be turned off and cut off. Assuming that the voltage of the node associated with the parasitic current is lower than the voltage of the load output terminal OUT by an opening threshold or more at this time, the first parasitic transistor 223 and the second parasitic transistor 224 will be turned on briefly at this time, and the node voltage associated with the parasitic current will be pulled up. As the node voltage associated with the parasitic current is pulled up, when the result of the voltage of the load output terminal OUT minus the voltage of the node associated with the parasitic current is less than the opening threshold, the first parasitic transistor 223 and the second parasitic transistor 224 will be turned off and cut off and remain turned off. Thereafter, the voltage of the control end of the power switch M1 can rise steadily to realize turning on the power switch M1.

[0054] In this embodiment, a reverse judgment module 230 is provided, and the reverse judgment module 230 cooperates with the switch control module 220. When the reverse judgment module 230 judges that the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC, the switch control module 220 controls the node associated with the power supply terminal VCC and the parasitic current to be disconnected based on the signal of the reverse judgment module 230, so that the first parasitic transistor 223 and the second parasitic transistor 224 will not be continuously turned on, the parasitic current path between the control terminal of the power switch M1 and the power supply terminal VCC is disconnected, and the parasitic current path between the control terminal of the power switch M1 and the power ground terminal GND is also disconnected. Therefore, when the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC and the power switch M1 needs to be turned on, the voltage of the control terminal of the power switch M1 will not be continuously pulled down due to the existence of the first parasitic transistor 223 and the second parasitic transistor 224, so that the power switch M1 can be reliably controlled to be turned on. Moreover, when the voltage of the load output terminal OUT is not greater than the voltage of the power supply terminal VCC, the node associated with the parasitic current remains connected to the power supply terminal VCC, thereby not affecting the normal use of the switch control module 220 .

[0055] In order to determine whether the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC, this embodiment makes a judgment through the second situation. In other embodiments of this embodiment, the judgment can also be made through the first situation. At this time, the reverse judgment module 230 includes a comparison unit, and the comparison unit is, for example, a voltage comparator or a current comparator. The voltage comparator is used to determine whether the difference between the voltage of the load output terminal OUT and the voltage of the power supply terminal VCC is greater than a reference voltage. At this time, the reference voltage is greater than or equal to the turn-on threshold. The current comparator is used to determine whether the reverse injection current from the load output terminal OUT to the power supply terminal is greater than 0.

[0056] In this embodiment, please refer to Figure 3a and Figure 4, through the second situation for evaluation, the reverse judgment module 230 includes a voltage comparator 231, the first end of the voltage comparator 231 is connected to the reference voltage Vref2, the other end of the reference voltage Vref2 is connected to the load output terminal OUT, the reference voltage Vref2 is, for example, 10mV-100mV, the reference voltage Vref2 will be less than the turn-on threshold of the first parasitic diode 223, the second end of the voltage comparator 231 is connected to the power supply terminal VCC, and the output end of the voltage comparator 231 is coupled to the control end of the blocking switch M5. In addition, in other embodiments of the present application, the reference voltage can also be connected between the power supply terminal and the second end of the voltage comparator. Under normal circumstances, the voltage of the load output terminal OUT will not be greater than the voltage of the power supply terminal VCC. The voltage comparator 231 is used to determine whether the result of subtracting the voltage of the power supply terminal VCC from the voltage of the load output terminal OUT is greater than the reference voltage Vref2. When it is greater than the reference voltage Vref2, the first parasitic transistor 223 and the second parasitic transistor 224 are not turned on yet. In order to quickly respond to the need to turn on the power switch, the reverse judgment module 230 still controls the blocking switch M5 to be turned off in advance, so that the power switch M1 can respond quickly when it needs to be turned on, thereby reducing the time it takes to turn on the power switch M1. In this embodiment, the reference voltage Vref2 is greater than 0, preferably greater than or equal to 10mV and less than or equal to 100mV. The purpose of the reference voltage Vref2 being greater than or equal to 10mV is to reduce false triggering in normal situations due to signal interference, while reducing the requirements for device accuracy and reducing costs. The purpose of the reference voltage Vref2 being less than or equal to 100mV is to prevent the turn-on threshold of the first parasitic transistor 223 from decreasing due to the increase in the temperature of the high-side intelligent electronic switch. The 100mV in this embodiment can ensure that the turn-on threshold of the first parasitic transistor 223 is less than the requirement within the temperature range specified in the specification of the high-side intelligent electronic switch, and can ensure that the first parasitic transistor 223 can control the turn-off of the blocking switch M5 before it is turned on. In this embodiment, the reference voltage Vref2 is, for example, 10mV, 20mV, 30mV, 40mV, 50mV, 60mV, 70mV, 80mV, 90mV, 100mV, etc.

[0057] In this embodiment, by setting the reference voltage to be less than the turn-on threshold of the first parasitic diode 223 and less than the minimum turn-on threshold due to temperature, process consistency, etc., the blocking switch M5 can be set to be disconnected and cut off as soon as possible even if there is a delay in signal processing and transmission. When the power switch M1 needs to be turned on, since the blocking switch M5 has been disconnected and cut off or can be disconnected and cut off soon, the influence of the short-term conduction of the first parasitic transistor 223 and the second parasitic transistor 224 on the turn-on time of the power switch can be reduced, thereby improving the response speed.

[0058] In addition, in other embodiments of the present application, the judgment can also be made through the first situation. At this time, the reference voltage must be greater than or equal to the turn-on threshold of the first parasitic transistor 223, for example, the reference voltage is greater than or equal to 0.3V. At this time, the blocking switch M5 is controlled to be turned off only on the premise that the first parasitic transistor 223 can be turned on. When the power switch M1 needs to be turned on, the power switch M1 can also be turned on. However, the response may not be so fast, and there will be some minor problems. For example, since the turn-on threshold of the first parasitic transistor 223 changes with temperature, process, etc., when the temperature of the intelligent electronic switch is high, the turn-on threshold will be reduced. In some cases, the first parasitic transistor 223 may be turned on, but the voltage comparator 231 still determines that the result of the voltage of the load output terminal OUT minus the voltage of the power supply terminal VCC is less than the reference voltage Vref2. This situation needs to be avoided. In addition, in other embodiments of the present application, a current comparator can be used to determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal. When the voltage at the load output terminal OUT minus the voltage at the power supply terminal VCC is greater than the turn-on threshold, the parasitic diode of the power switch will be turned on, and a reverse current will appear from the load output terminal OUT to the power supply terminal VCC. When the current comparator determines that the reverse current is greater than 0, the reverse judgment module determines whether the voltage at the load output terminal is greater than the voltage at the power supply terminal.

[0059] In the present application, when the reverse judgment module 230 determines that the voltage of the load output terminal OUT is greater than the voltage of the power supply terminal VCC, it controls the blocking switch M5 to be disconnected and cut off. In actual application, the specific value of the reference voltage Vref2 can be set as needed, and the reference voltage Vref2 is greater than 0.

[0060] Please continue to refer to Figure 3a and Figure 3bIn this embodiment, the intelligent electronic switch is made on the same integrated circuit chip. The intelligent electronic switch 200 is made by a planar BCD (Bipolar-CMOS-DMOS) process. At this time, the three terminals of the power switch M1 and other MOS tubes are located in the same plane, where the three terminals are the source, the drain and the control terminal. Specifically, a second n-type buried layer 416 (NBL) is also formed on the p-type substrate 411, an N-doped layer 417 and a P-doped layer 418 are formed in the second n-type buried layer 416, a third n+ doped region (drain) is formed in the N-doped layer 417, a third n+ doped region (source) and a third p+ doped region are formed in the P-doped layer 418, and then a control terminal is formed thereon, wherein the third n+ doped region (source) is connected to the load output terminal OUT, the third n+ doped region (drain) is connected to the power supply terminal VCC, the third p+ doped region is connected to the load output terminal OUT, and the second n-type buried layer 416 is connected to the power supply terminal VCC. The power switch M1 here does not draw all the film layers, and is a simplified model. The formation of the power switch M1 is a technology in this field and will not be repeated here.

[0061] In this embodiment, the blocking switch M5 is a PMOS transistor, and the blocking switch M5 is also located in the first n-type buried layer 412. Specifically, a fourth n-well 419 is formed in the first n-type buried layer 412, and a fourth n+ doping region, a fourth first p+ doping region, and a fourth second p+ doping region are formed in the fourth n-well 419, wherein the fourth first p+ doping region (drain) is coupled to the power supply terminal VCC, the fourth second p+ doping region (source) is connected to the first n-type buried layer 412, and the fourth n-well 419 is connected to the first n-type buried layer 412 via the fourth n+ doping region. The control end of the blocking switch M5 is located above the fourth n-well 419 and is connected to the reverse judgment module 230. In this embodiment, the first n-type buried layer 412 and the second n-type buried layer 416 have an electrical isolation function.

[0062] The embodiment of the present application also provides an integrated circuit chip, the integrated circuit chip includes the above-mentioned high-side intelligent electronic switch 200, that is, the above-mentioned intelligent electronic switch 200 is made on the same semiconductor substrate. Among them, the power supply terminal VCC is the power supply pin, the power ground terminal GND is the power ground pin, and the load output terminal OUT is the load output pin. At this time, the turn-on threshold of the first parasitic transistor is equal to the turn-on threshold of the parasitic diode of the power switch. When the power switch is turned off and there is a reverse current from the load output terminal to the power supply terminal, the result of the voltage of the load output terminal OUT minus the voltage of the power supply terminal VCC will be greater than or equal to the turn-on threshold of the parasitic diode of the power switch, that is, it will be greater than or equal to the turn-on threshold of the first parasitic transistor 223.

[0063] Other embodiments of the present application also provide a chip product, the chip product includes the above-mentioned high-side intelligent electronic switch 200, wherein the components of the intelligent electronic switch 200 except the power switch M1 are located on the first integrated circuit chip, and the power switch M1 is located on the second integrated circuit chip, that is, the first integrated circuit chip is made on a semiconductor substrate, and the second integrated circuit chip is made on another semiconductor substrate. Among them, the power supply terminal VCC is the power supply pin, the power ground terminal GND is the power ground pin, and the load output terminal OUT is the load output pin. The first integrated circuit chip includes a power supply pin and a power ground pin, and the second integrated circuit chip includes a power supply pin and a load output pin, that is, the power supply pin is on both the first integrated circuit chip and the second integrated circuit chip. The first integrated circuit chip and the second integrated circuit chip can also be provided with other pins as needed. Here, the first integrated circuit chip and the second integrated circuit chip are packaged into one product. Here, the power switch in the second integrated circuit chip can be a VDMOS (Vertical Double-diffused Metal-Oxide-Semiconductor) or a LDMOS (Lateral Double-diffused MOSFET), etc., without limitation.

[0064] In addition, in other embodiments of the present application, the intelligent electronic switch 200, integrated circuit chip, and chip product of the present embodiment are not limited to use in automotive electronics, but can also be used in industrial automation, aerospace and other fields.

[0065] Figure 5 It is a flow chart corresponding to the method of the above embodiment. Figure 5 The method can refer to the previous Figure 1 , Figure 3a-Figure 4 The implementation of the high-side intelligent electronic switch 200 discussed above is not limited thereto. Figure 5 When using the method, refer to Figure 1 , Figure 3a-Figure 4 Here, the control method of the high-side intelligent electronic switch 200 includes:

[0066] S110: Control the power switch M1 to be disconnected and cut off;

[0067] S120: Determine whether the voltage at the load output terminal is greater than the voltage at the power supply terminal;

[0068] S131: If the judgment result is yes, control the power supply terminal VCC to disconnect the node associated with the parasitic current to block the flow of the parasitic current, so that the power switch M1 can be turned on;

[0069] S132: If the judgment result is no, control the power supply terminal VCC and the node associated with the parasitic current to turn on and conduct.

[0070] The technicians in the relevant field can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In practical applications, the above-mentioned function allocation can be completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiment can be integrated in a processing unit, or each unit can exist physically separately, or two or more units can be integrated in one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, which will not be repeated here.

[0071] It should be understood that the "plurality" mentioned in this article refers to two or more. Those skilled in the art will easily think of other embodiments of the present application after considering the specification and practicing the application disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary technical means in the art that are not disclosed in the present application. The specification and examples are only regarded as exemplary, and the true scope and spirit of the present application are indicated by the following claims.

[0072] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0073] The above disclosure is only the preferred embodiment of the present application, which certainly cannot be used to limit the scope of rights of the present application. Therefore, equivalent changes made according to the claims of the present application are still within the scope covered by the present application.

Claims

1. A high-side intelligent electronic switch, characterized in that: include: A power supply terminal, a power ground terminal, a load output terminal, and a switch control module, wherein the power supply terminal is used to connect to the positive electrode of the power supply, the power ground terminal is used to connect to the negative electrode of the power supply, and the load output terminal is used to connect to the load; A power switch, a first end of which is connected to a power supply end, a second end of which is connected to a load output end, and a control end of which is connected to a switch control module, wherein the switch control module is used to control the power switch to be turned on or off; A reverse judgment module, which is used to judge whether the voltage at the load output end is greater than the voltage at the power supply end; Among them, the reverse judgment module is connected to the switch control module. When the reverse judgment module determines that the voltage at the load output end is greater than the voltage at the power supply end, the switch control module controls the node associated with the parasitic current at the power supply end to be disconnected based on the signal of the reverse judgment module to block the flow of parasitic current, so that the power switch can be turned on.

2. The high-side intelligent electronic switch according to claim 1, characterized in that: The switch control module includes a blocking switch, and the control end of the blocking switch is controlled by the reverse judgment module. When the reverse judgment module determines that the voltage at the load output end is greater than the voltage at the power supply end, the blocking switch is disconnected and cut off; when the reverse judgment module determines that the voltage at the load output end is not greater than the voltage at the power supply end, the blocking switch is turned on.

3. The high-side intelligent electronic switch according to claim 2, characterized in that: The switch control module includes a conduction switch, a shutoff switch and a logic control unit, wherein a first end of the conduction switch is connected to the boost unit, a second end of the conduction switch is connected to the control end of the power switch, a first end of the shutoff switch is connected to the control end of the power switch, a second end of the shutoff switch is connected to the load output end, and the control end of the conduction switch and the control end of the shutoff switch are both connected to the logic control unit; The node associated with the parasitic current includes the n-type buried layer itself or an end thereof, the on-switch and the off-switch are located in the n-type buried layer, and the n-type buried layer is located in the p-type substrate.

4. The high-side intelligent electronic switch according to claim 3, characterized in that: The blocking switch is located in the n-type buried layer.

5. The high-side intelligent electronic switch according to claim 2, characterized in that: The blocking switch is a MOS tube, a triode or a junction FET.

6. The high-side intelligent electronic switch according to claim 2, characterized in that: The reverse judgment module includes a voltage comparator, a first end of the voltage comparator is connected to the load output end, a second end of the voltage comparator is connected to the power supply end, the output end of the voltage comparator is coupled to the control end of the blocking switch, and the voltage comparator determines whether the difference between the voltage at the load output end and the voltage at the power supply end is greater than a reference voltage, wherein the reference voltage is less than the turn-on threshold of the first parasitic transistor.

7. The high-side intelligent electronic switch according to claim 6, characterized in that: The reference voltage ranges from 10mV to 100mV.

8. The high-side intelligent electronic switch according to any one of claims 1 to 5, characterized in that: When the result of subtracting the voltage of the power supply end from the voltage of the load output end is greater than the reference voltage, the reverse judgment module judges that the voltage of the load output end is greater than the voltage of the power supply end, wherein the reference voltage is greater than 0; or When the result of subtracting the voltage of the power supply end from the voltage of the load output end is greater than or equal to the turn-on threshold of the parasitic diode of the power switch, the reverse judgment module determines that the voltage of the load output end is greater than the voltage of the power supply end.

9. An integrated circuit chip, characterized in that: It comprises a high-side intelligent electronic switch as described in any one of claims 1-8, wherein the power supply end is a power supply pin, the power ground end is a power ground pin, and the load output end is a load output pin.

10. The integrated circuit chip according to claim 9, characterized in that: The power switch is a MOS tube, and three ends of the MOS tube of the intelligent electronic switch are located in the same plane.

11. A chip product, characterized in that: The high-side intelligent electronic switch according to any one of claims 1 to 8, wherein the components of the high-side intelligent electronic switch except the power switch are located on a first integrated circuit chip, and the power switch is located on a second integrated circuit chip; Among them, the power supply end is a power supply pin, the power ground end is a power ground pin, the load output end is a load output pin, the first integrated circuit chip includes the power supply pin and the power ground pin, and the second integrated circuit chip includes the load output pin.

12. The chip product according to claim 11, characterized in that: The three ends of the MOS tube of the first integrated circuit chip are located in the same plane.

13. An electromechanical device, characterized in that: A high-side intelligent electronic switch according to any one of claims 1 to 8, or an integrated circuit chip according to claim 9 or 10, or a chip product according to claim 11 or 12; It also includes a power supply, a load and a microprocessor, wherein the positive pole of the power supply is connected to the power supply terminal, the negative pole of the power supply is connected to the power ground terminal, one end of the load is connected to the load output terminal, the other end of the load is connected to the power ground terminal, and the microprocessor is connected to the intelligent electronic switch.

14. The electromechanical device according to claim 13, characterized in that The electromechanical device includes an automobile.

15. A control method for a high-side intelligent electronic switch, characterized in that: include: Determine whether the voltage at the load output end is greater than the voltage at the power supply end; If the judgment result is yes, controlling the node associated with the parasitic current at the power supply end to be disconnected to block the flow of the parasitic current, so that the power switch can be turned on; If the judgment result is no, the node of the power supply terminal associated with the parasitic current is controlled to be turned on.

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