Single-pole double-throw switch circuit suitable for broadband application and electronic equipment

Abstract

The invention discloses a single-pole double-throw switch circuit suitable for broadband application and electronic equipment. The single-pole double-throw switch circuit comprises a first microstrip line Z1, a second microstrip line Z2, a first switch branch and a second switch branch. A switch branch formed by a plurality of series-parallel connection combination modules is adopted, the grid electrode of each series-parallel connection combination module is controlled by inputting corresponding control voltage, so that the working state of the single-pole double-throw switch circuit is controlled, when the single-pole double-throw switch circuit is in a turn-off state, the parallel connection parts in the series-parallel connection combination modules lead leakage signals to the ground, and the leakage signals are transmitted to the ground. Optimization of isolation under high frequency is realized, and the antenna is suitable for being applied to a broadband scene; furthermore, the transistor of the series-parallel width combination of the active region in the series-parallel combination module designed by the invention is a combination device of an equivalent series transistor and an equivalent parallel transistor, and the device is utilized to realize the effect that one device is used as a circuit branch, so that the circuit layout area is greatly saved, and the cost is reduced.

Description

Technical Field

[0001] The invention belongs to the field of radio frequency circuits, and in particular relates to a single-pole double-throw switch circuit and electronic equipment suitable for wide-band applications. Background Art

[0002] With the continuous evolution of mobile communication technology, the RF front-end is facing more and more challenges. The widespread application of 5G technology requires the RF front-end to support higher frequency bands, larger bandwidths and more complex modulation methods. The RF switch is an important part of the RF front-end. The increased requirements for the RF front-end also increase the performance requirements for the RF switch.

[0003] In wireless communication transceiver systems, high-performance switches are key modules that control the transmission and reception of the system. For switching devices, it is necessary to take into account indicators such as insertion loss, isolation, and power capacity. At present, RF switch circuits designed using GaN HEMT devices have been widely studied and applied. In 2013, the Canadian Communications Research Center used resonant inductors and other technologies to realize a new type of high-power gallium nitride SPDT switch that can operate in the X-band, improving the isolation of the switch at high frequencies. In 2022, the University of Electronic Science and Technology of China used optimized HEMT size and parallel topology to design a compact Ka-band SPDT switch MMIC based on GaN HEMT technology. In 2024, the Delhi Solid State Physics Laboratory in India designed two MMIC SPDT switches for C-band and X-band using independent GaN / AlGaN HEMT technology.

[0004] Existing RF circuits use independent field-effect transistors as RF front-end selection switches, which seriously deteriorate the isolation at high frequencies and are not conducive to broadband applications of RF circuits. On the other hand, traditional monolithic microwave integrated circuit designs mostly use traveling wave transmission structures to expand the operating frequency band of RF switches, but the microstrip line introduction area is large and the layout is more complex, which may increase the influence of electromagnetic effects between microstrips. Summary of the invention

[0005] In order to solve the above problems existing in the prior art, the present invention provides a single-pole double-throw switch circuit and electronic equipment suitable for wideband applications. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0006] In a first aspect, the present invention provides a single-pole double-throw switch circuit suitable for wideband applications, comprising:

[0007] A first microstrip line Z1, a second microstrip line Z2, a first switch branch and a second switch branch; wherein,

[0008] The first end of the first microstrip line Z1 serves as the input end port1 of the single-pole double-throw switch circuit, and the second end is connected to the input end of the second microstrip line Z2;

[0009] The first output end of the second microstrip line Z2 is connected to the input end of the first switch branch, and the second output end is connected to the input end of the second switch branch;

[0010] The output end of the first switch branch serves as the first output end port2 of the single-pole double-throw switch circuit;

[0011] The output end of the second switch branch serves as the second output end port3 of the single-pole double-throw switch circuit;

[0012] The first switch branch and the second switch branch each include a plurality of series-parallel combination modules;

[0013] The first switch branch and the second switch branch control the working state of the single-pole double-throw switch circuit respectively under the control of corresponding control voltages.

[0014] In one embodiment of the present invention, any one of the first switch branch and the second switch branch includes:

[0015] a first sub-microstrip line, a first serial-parallel combination module, a second sub-microstrip line, a second serial-parallel combination module, a third sub-microstrip line, a third serial-parallel combination module and a fourth sub-microstrip line; wherein,

[0016] The first end of the first sub-microstrip line serves as the input end of the corresponding switch circuit, and the second end is connected to the input end of the first series-parallel combination module;

[0017] The first control voltage input terminal of the first series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the second sub-microstrip line;

[0018] The second end of the second sub-microstrip line is connected to the input end of the second series-parallel combination module;

[0019] The first control voltage input terminal of the second series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the third sub-microstrip line;

[0020] The second end of the third sub-microstrip line is connected to the input end of the third series-parallel combination module;

[0021] The first control voltage input terminal of the third series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the fourth sub-microstrip line;

[0022] The second end of the fourth sub-microstrip line serves as the output end of the corresponding switch circuit.

[0023] In one embodiment of the present invention, any one of the first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module includes:

[0024] Active area series-parallel width combination transistor, first bias resistor and second bias resistor; wherein,

[0025] The first end of the transistor of the active area series-parallel width combination is used as the input end of the series-parallel combination module, the second end is used as the output end of the series-parallel combination module, the series part control end is connected to the first end of the first bias resistor, and the parallel part control end is connected to the first end of the second bias resistor;

[0026] The second end of the first bias resistor serves as a first control voltage input end of the series-parallel combination module;

[0027] The second end of the second bias resistor serves as a second control voltage input end of the series-parallel combination module.

[0028] In one embodiment of the present invention, the transistor with active area series-parallel width combination includes:

[0029] Equivalent series transistors and equivalent parallel transistors; where,

[0030] The source of the equivalent series transistor is used as the first end of the transistor of the active area series-parallel width combination, the gate is used as the series part control end of the transistor of the active area series-parallel width combination, and the drain is used as the second end of the transistor of the active area series-parallel width combination;

[0031] The source of the equivalent parallel transistor is connected to the drain of the equivalent series transistor, the gate serves as the parallel part control terminal of the transistor of the active area series-parallel width combination, and the drain is grounded.

[0032] In one embodiment of the present invention, the first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module each include a series part and a parallel part.

[0033] In one embodiment of the present invention, the series connection part includes: the equivalent series transistor and the first bias resistor.

[0034] In one embodiment of the present invention, the parallel connection part includes: the equivalent parallel connection transistor and the second bias resistor.

[0035] In one embodiment of the present invention, the first switch branch and the second switch branch respectively control the working state of the single-pole double-throw switch circuit under the control of corresponding control voltages, including:

[0036] By inputting the first preset voltage as the control voltage V CTL1 and control voltage V CTL4 , control the equivalent series transistors in all the series-parallel combination modules in the first switch branch to be turned on, and control the equivalent parallel transistors in all the series-parallel combination modules in the second switch branch to be turned on; input a second preset voltage as the control voltage V CTL2 and control voltage V CTL3 , controlling the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to turn off, and controlling the equivalent series transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the first switch branch of the single-pole double-throw switch circuit is turned on;

[0037] By inputting the first preset voltage as the control voltage V CTL2 and control voltage V CTL3 , control the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to be turned on, and control the equivalent series transistors in all the series-parallel combination modules in the second switch branch to be turned on; input a second preset voltage as the control voltage V CTL1 and control voltage V CTL4 , controlling the equivalent series transistors in all the series-parallel combination modules in the first switch branch to turn off, and controlling the equivalent parallel transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the second switch branch of the single-pole double-throw switch circuit is turned on;

[0038] By inputting the first preset voltage as the control voltage V CTL2 and control voltage V CTL4 , control the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to be turned on, and control the equivalent parallel transistors in all the series-parallel combination modules in the second switch branch to be turned on; input a second preset voltage as the control voltage V CTL1 and control voltage V CTL3 , control the equivalent series transistors in all the series-parallel combination modules in the first switch branch to turn off, control the equivalent series transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the single-pole double-throw switch circuit is turned off.

[0039] In a second aspect, the present invention provides an electronic device, such as the single-pole double-throw switch circuit suitable for wide-band applications as described in the first aspect.

[0040] Beneficial effects of the present invention:

[0041] In the solution provided by the present invention, a switch branch composed of multiple series-parallel combination modules is adopted. By inputting the corresponding control voltage, the gate of each series-parallel combination module is controlled, thereby controlling the working state of the single-pole double-throw switch circuit. When the single-pole double-throw switch circuit is in the off state, the parallel part in the series-parallel combination module introduces the leakage signal into the ground, thereby realizing the optimization of isolation at high frequency, and is suitable for application in wide-band scenarios; further, the transistor with active area series-parallel width combination in the series-parallel combination module designed by the present invention is a combination device of an equivalent series transistor and an equivalent parallel transistor. The device is used to realize the role of a device as a circuit branch, which greatly saves the circuit layout area and reduces the cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 A schematic diagram of a single-pole double-throw switch circuit suitable for wideband applications provided by an embodiment of the present invention;

[0043] Figure 2 A schematic diagram of the structure of a single-pole double-throw switch circuit suitable for wide-band applications provided by an embodiment of the present invention;

[0044] Figure 3 A three-dimensional diagram of the device structure of a transistor with a series-parallel width combination of active regions provided by an embodiment of the present invention;

[0045] Figure 4 A simulation result diagram of a single-pole double-throw switch circuit suitable for wide-band applications provided by an embodiment of the present invention;

[0046] Figure 5 A circuit plane layout of a single-pole double-throw switch circuit suitable for wide-band applications in an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0048] In order to solve the problem of reduced isolation of a radio frequency switch circuit at high frequencies, an embodiment of the present invention provides a single-pole double-throw switch circuit and an electronic device suitable for wide-band applications.

[0049] Below, firstly, a single-pole double-throw switch circuit suitable for wide-band application provided by an embodiment of the present invention is introduced.

[0050] like Figure 1 As shown, a single-pole double-throw switch circuit suitable for wideband applications provided by an embodiment of the present invention may include:

[0051] A first microstrip line Z1, a second microstrip line Z2, a first switch branch and a second switch branch; wherein,

[0052] A first end of the first microstrip line Z1 is used as an input end port1 of the single-pole double-throw switch circuit, and a second end is connected to an input end of the second microstrip line Z2;

[0053] A first output end of the second microstrip line Z2 is connected to an input end of the first switch branch, and a second output end is connected to an input end of the second switch branch;

[0054] The output end of the first switch branch serves as the first output end port2 of the single-pole double-throw switch circuit;

[0055] The output end of the second switch branch serves as the second output end port3 of the single-pole double-throw switch circuit;

[0056] The first switch branch and the second switch branch each include a plurality of series-parallel combination modules;

[0057] The first switch branch and the second switch branch control the working state of the single-pole double-throw switch circuit respectively under the control of corresponding control voltages.

[0058] Specifically, the second microstrip line Z2 may be a T-junction microstrip line.

[0059] The single-pole double-throw switch circuit proposed in the embodiment of the present invention includes two switch branches, each switch branch is composed of a plurality of series-parallel combination modules; by inputting a corresponding control voltage, the gate of each series-parallel combination module is controlled, thereby controlling the working state of the single-pole double-throw switch circuit. When the single-pole double-throw switch circuit is in the off state, the parallel part in the series-parallel combination module directs the leakage signal into the ground, thereby achieving optimization of isolation at high frequency, and is suitable for application in wide-band scenarios.

[0060] For each switch branch proposed in the embodiment of the present invention, any one of the first switch branch and the second switch branch, such as Figure 2 As shown, this may include:

[0061] a first sub-microstrip line, a first serial-parallel combination module, a second sub-microstrip line, a second serial-parallel combination module, a third sub-microstrip line, a third serial-parallel combination module and a fourth sub-microstrip line; wherein,

[0062] The first end of the first sub-microstrip line serves as the input end of the corresponding switch circuit, and the second end is connected to the input end of the first series-parallel combination module;

[0063] The first control voltage input terminal of the first series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the second sub-microstrip line;

[0064] The second end of the second sub-microstrip line is connected to the input end of the second series-parallel combination module;

[0065] The first control voltage input terminal of the second series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the third sub-microstrip line;

[0066] The second end of the third sub-microstrip line is connected to the input end of the third series-parallel combination module;

[0067] The first control voltage input terminal of the third series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the fourth sub-microstrip line;

[0068] The second end of the fourth sub-microstrip line serves as the output end of the corresponding switch circuit.

[0069] Understandable, such as Figure 2 As shown in , for the first switch branch, the first sub-microstrip line is Z3, the second sub-microstrip line is Z4, the third sub-microstrip line is Z5, the fourth sub-microstrip line is Z6, the first series-parallel combination module is located between Z3 and Z4, the second series-parallel combination module is located between Z4 and Z5, and the third series-parallel combination module is located between Z5 and Z6. For the second switch branch, the first sub-microstrip line is Z7, the second sub-microstrip line is Z8, the third sub-microstrip line is Z9, the fourth sub-microstrip line is Z10, the first series-parallel combination module is located between Z7 and Z8, the second series-parallel combination module is located between Z8 and Z9, and the third series-parallel combination module is located between Z9 and Z10.

[0070] Any one of the first series-parallel combination module, the second series-parallel combination module, and the third series-parallel combination module may include:

[0071] Active area series-parallel width combination transistor, first bias resistor and second bias resistor; wherein,

[0072] The first end of the transistor of the active area series-parallel width combination is used as the input end of the series-parallel combination module, the second end is used as the output end of the series-parallel combination module, the series part control end is connected to the first end of the first bias resistor, and the parallel part control end is connected to the first end of the second bias resistor;

[0073] The second end of the first bias resistor serves as a first control voltage input end of the series-parallel combination module;

[0074] The second end of the second bias resistor serves as a second control voltage input end of the series-parallel combination module.

[0075] Understandable, such as Figure 2 As shown in FIG. 1 , for the first series-parallel combination module in the first switch branch, the transistor of the active region series-parallel width combination is M1, and the first bias resistor is R g1 , the second bias resistor is R g2 For the second series-parallel combination module in the first switch branch, the transistor of the active area series-parallel width combination is M2, and the first bias resistor is R g3 , the second bias resistor is R g4 For the third series-parallel combination module in the first switch branch, the transistor of the active area series-parallel width combination is M3, and the first bias resistor is R g5 , the second bias resistor is R g6 For the first series-parallel combination module in the second switch branch, the transistor of the active area series-parallel width combination is M4, and the first bias resistor is R g7 , the second bias resistor is R g8 For the second series-parallel combination module in the second switch branch, the transistor of the active area series-parallel width combination is M5, and the first bias resistor is R g9 , the second bias resistor is R g10 For the third series-parallel combination module in the second switch branch, the transistor of the active area series-parallel width combination is M6, and the first bias resistor is R g11 , the second bias resistor is R g12 .

[0076] Each series-parallel combination module includes transistors with the same structure and series-parallel width combination of active regions, such as Figure 2 As shown, this may include:

[0077] Equivalent series transistors and equivalent parallel transistors; where,

[0078] The source of the equivalent series transistor is used as the first end of the transistor of the active area series-parallel width combination, the gate is used as the series part control end of the transistor of the active area series-parallel width combination, and the drain is used as the second end of the transistor of the active area series-parallel width combination;

[0079] The source of the equivalent parallel transistor is connected to the drain of the equivalent series transistor, the gate serves as the parallel part control terminal of the transistor of the active area series-parallel width combination, and the drain is grounded.

[0080] In one embodiment of the present invention, the proposed transistor with active region series-parallel width combination is a gallium nitride high electron mobility field effect transistor (GaN HEMT) with active region series width and parallel width combination, and the device partial structure stereogram is shown in FIG. Figure 3 As shown. It can be understood that for the sake of convenience, Figure 3 Only the SiN passivation layer SiNpassivation of the device and the ohmic metal, gate metal and interconnect metal on the passivation layer are shown. The substrate Substrate Substrate, GaN buffer layer GaN buffer, GaN transmission layer GaN channel and AlGaN isolation layer AlGaN barrier obtained by epitaxial growth under the passivation layer are all conventional structures and are therefore not shown in the figure. Figure 3 As shown in . The embodiment of the present invention adopts the theory of traveling wave transmission, combines switches in series and parallel, adjusts the active area width Wseries of the series part and the active area width Wshunt of the parallel part to optimize the isolation performance of the switch at high frequency, and realizes high integration of series and parallel of a single device through discrete gate control; by combining electromagnetic simulation and epitaxial material design, the ratio of Wseries to Wshunt can be adjusted with high freedom and high adaptability, so as to achieve the optimization design of switch RF performance under wide bandwidth. It can be understood that the transistor with active area series-parallel width combination proposed in the embodiment of the present invention adopts the active area series width and parallel width combination, and integrates the equivalent series transistor and the equivalent parallel transistor together by reconstructing and dividing the active area where the ohmic metal is located and discretely controlling the gate strips. The embodiment of the present invention uses an equivalent series transistor and an equivalent parallel transistor to form a transistor with an active area series-parallel width combination. The use of the transistor with the active area series-parallel width combination replaces the traditional field effect transistor so that the circuit has better isolation at high frequency, and as Figure 2 As shown in the dotted line portion, the transistor is a gallium nitride radio frequency device having a series transistor and a parallel transistor. Therefore, the embodiment of the present invention replaces two devices in the traditional circuit with one device, which greatly saves the circuit layout area and reduces the cost.

[0081] The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module each include a series part and a parallel part.

[0082] Specifically, for each series-parallel combination module, its series part may include: a series transistor and a first bias resistor; and its parallel part may include: a parallel transistor and a second bias resistor.

[0083] The first switch branch and the second switch branch respectively control the working state of the single-pole double-throw switch circuit under the control of the corresponding control voltage, including:

[0084] By inputting the first preset voltage as the control voltage V CTL1 and control voltage V CTL4 , control the equivalent series transistors in all series-parallel combination modules in the first switch branch to be turned on, and control the equivalent parallel transistors in all series-parallel combination modules in the second switch branch to be turned on; input the second preset voltage as the control voltage V CTL2 and control voltage V CTL3 , controlling the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to turn off, controlling the equivalent series transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the first switch branch of the single-pole double-throw switch circuit is turned on;

[0085] By inputting the first preset voltage as the control voltage V CTL2 and control voltage V CTL3 , control the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to be turned on, and control the equivalent series transistors in all the series-parallel combination modules in the second switch branch to be turned on; input the second preset voltage as the control voltage V CTL1 and control voltage V CTL4 , controlling the equivalent series transistors in all the series-parallel combination modules in the first switch branch to turn off, controlling the equivalent parallel transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the second switch branch of the single-pole double-throw switch circuit is turned on;

[0086] By inputting the first preset voltage as the control voltage V CTL2 and control voltage V CTL4 , control the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to be turned on, and control the equivalent parallel transistors in all the series-parallel combination modules in the second switch branch to be turned on; input the second preset voltage as the control voltage V CTL1 and control voltage V CTL3 , control the equivalent series transistors in all the series-parallel combination modules in the first switch branch to turn off, control the equivalent series transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the single-pole double-throw switch circuit is turned off.

[0087] Specifically, the first preset voltage may include: a DC gate voltage of 0V. The second preset voltage may include: a DC gate voltage of -28V. In order to adapt to other modules in the overall circuit, the first preset voltage may be set to 0V and the second preset voltage may be set to -28V; since generally speaking, the RF PA module in the overall circuit generally sets a drain bias of 28V, the second preset voltage is set to -28V, which is equivalent to setting a reverse signal to better adapt the DC distribution of the two modules.

[0088] It can be understood that when the single-pole double-throw switch circuit needs to be turned on, the first preset voltage is input as the control voltage V CTL1 , after passing through each first bias resistor in the first switch branch, each equivalent series transistor in the first switch branch is controlled to be turned on; a first preset voltage is input as a control voltage V CTL4 , after passing through each second bias resistor in the second switch branch, each equivalent parallel transistor in the second switch branch is controlled to be turned on; by inputting the second preset voltage as the control voltage V CTL2 , after passing through each second bias resistor in the first switch branch, each equivalent parallel transistor in the first switch branch is controlled to be turned off; by inputting the second preset voltage as the control voltage V CTL3 , after passing through each first bias resistor in the second switch branch, each equivalent series transistor in the second switch branch is controlled to be turned off, so that the transistors M1, M2 and M3 of the active area series-parallel width combination are all turned on, thereby turning on the first switch branch of the single-pole double-throw switch circuit. By inputting the first preset voltage as the control voltage V CTL2 , after passing through each second bias resistor in the first switch branch, each equivalent parallel transistor in the first switch branch is controlled to be turned on; the first preset voltage is input as the control voltage V CTL3 , after passing through each first bias resistor in the second switch branch, each equivalent series transistor in the second switch branch is controlled to be turned on; a second preset voltage is input as a control voltage V CTL1 , after passing through each first bias resistor in the first switch branch, each equivalent series transistor in the first switch branch is controlled to be turned off; a second preset voltage is input as a control voltage V CTL4 , after passing through each second bias resistor in the second switch branch, each equivalent parallel transistor in the second switch branch is controlled to be turned off; so that the transistors M4, M5 and M6 of the active area series-parallel width combination are all turned on, thereby turning on the second switch branch of the single-pole double-throw switch circuit. When the single-pole double-throw switch circuit needs to be turned off, the first preset voltage is input as the control voltage V CTL2 , after passing through each second bias resistor in the first switch branch, the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch are controlled to be turned on, and the first preset voltage is input as the control voltage V CTL4 , after passing through each second bias resistor in the second switch branch, the equivalent parallel transistors in all series-parallel combination modules in the second switch branch are controlled to be turned on; the second preset voltage is input as the control voltage V CTL1 , after passing through each first bias resistor in the first switch branch, the equivalent series transistors in all series-parallel combination modules in the first switch branch are controlled to be turned off, and the second preset voltage is input as the control voltage V CTL3, after passing through each first bias resistor in the second switch branch, the equivalent series transistors in all series-parallel combination modules in the second switch branch are controlled to be turned off, so that the transistors M1, M2, M3, M4, M5 and M6 of the series-parallel width combination in the active area are all turned off, thereby turning off the single-pole double-throw switch circuit. Most of the signals of the closed switch branch are partially blocked by the equivalent series transistors, and a small amount of leakage signals are introduced into the ground by the equivalent parallel transistors, so that the isolation is improved in the off state.

[0089] The simulation result diagram of the single-pole double-throw switch circuit suitable for wide-band applications provided by the embodiment of the present invention is shown in FIG. Figure 4 ,from Figure 4 It can be seen that the blue is the relationship between the frequency freq and the isolation ISO corresponding to the single-pole double-throw switch circuit of the embodiment of the present invention, and the red is the relationship between the frequency freq and the isolation ISO corresponding to the conventional circuit. It can be clearly seen that the single-pole double-throw switch circuit proposed in this application has better isolation than the conventional circuit, especially in a wide frequency band. It can be understood that for isolation, its value is negative and the larger the specific value, the higher the isolation.

[0090] In a second aspect, an embodiment of the present invention provides an electronic device, which may include the single-pole double-throw switch circuit suitable for wideband applications as provided in the first aspect. For a circuit plan layout of a single-pole double-throw switch circuit suitable for wideband applications provided by an embodiment of the present invention in an electronic device, see Figure 5 As shown, from Figure 5 It can be seen that Z3, M1, Z4, M2, Z5, M3 and Z6 are sequentially arranged in the circuit of the electronic device to constitute a first switch branch; Z7, M4, Z8, M5, Z9, M6 and Z10 are sequentially arranged in the circuit of the electronic device to constitute a second switch branch; the first microstrip line Z1, the second microstrip line Z2, the first switch branch and the second switch branch as a whole constitute the electronic device, and the specific circuit structure is not repeated here.

[0091] The single-pole double-throw switch circuit proposed in the embodiment of the present invention adopts a switch branch composed of multiple series-parallel combination modules. By inputting the corresponding control voltage, the gate of each series-parallel combination module is controlled, thereby controlling the working state of the single-pole double-throw switch circuit. When the single-pole double-throw switch circuit is in the off state, the parallel part in the series-parallel combination module introduces the leakage signal into the ground, thereby optimizing the isolation at high frequency and being suitable for application in wide-band scenarios; further, the transistor with a series-parallel width combination in the active area in the series-parallel combination module designed by the present invention is a combination device of an equivalent series transistor and an equivalent parallel transistor. The device is used to realize the role of one device as a circuit branch, greatly saving the circuit layout area and reducing the cost.

[0092] It should be noted that in the description of the present invention, it should be understood that the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0093] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A single-pole double-throw switch circuit suitable for broadband applications, characterized in that: include: A first microstrip line Z1, a second microstrip line Z2, a first switch branch and a second switch branch; wherein, The first end of the first microstrip line Z1 serves as the input end port1 of the single-pole double-throw switch circuit, and the second end is connected to the input end of the second microstrip line Z2; The first output end of the second microstrip line Z2 is connected to the input end of the first switch branch, and the second output end is connected to the input end of the second switch branch; The output end of the first switch branch serves as the first output end port2 of the single-pole double-throw switch circuit; The output end of the second switch branch serves as the second output end port3 of the single-pole double-throw switch circuit; The first switch branch and the second switch branch each include a plurality of series-parallel combination modules; The first switch branch and the second switch branch control the working state of the single-pole double-throw switch circuit respectively under the control of corresponding control voltages.

2. A single-pole double-throw switch circuit suitable for wideband applications according to claim 1, characterized in that: Any one of the first switch branch and the second switch branch comprises: a first sub-microstrip line, a first serial-parallel combination module, a second sub-microstrip line, a second serial-parallel combination module, a third sub-microstrip line, a third serial-parallel combination module and a fourth sub-microstrip line; wherein, The first end of the first sub-microstrip line serves as the input end of the corresponding switch circuit, and the second end is connected to the input end of the first series-parallel combination module; The first control voltage input terminal of the first series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the second sub-microstrip line; The second end of the second sub-microstrip line is connected to the input end of the second series-parallel combination module; The first control voltage input terminal of the second series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the third sub-microstrip line; The second end of the third sub-microstrip line is connected to the input end of the third series-parallel combination module; The first control voltage input terminal of the third series-parallel combination module is connected to the first control voltage, the second control voltage input terminal is connected to the second control voltage, and the output terminal is connected to the first end of the fourth sub-microstrip line; The second end of the fourth sub-microstrip line serves as the output end of the corresponding switch circuit.

3. A single-pole double-throw switch circuit suitable for wideband applications according to claim 2, characterized in that: Any one of the first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module comprises: Active area series-parallel width combination transistor, first bias resistor and second bias resistor; wherein, The first end of the transistor of the active area series-parallel width combination is used as the input end of the series-parallel combination module, the second end is used as the output end of the series-parallel combination module, the series part control end is connected to the first end of the first bias resistor, and the parallel part control end is connected to the first end of the second bias resistor; The second end of the first bias resistor serves as a first control voltage input end of the series-parallel combination module; The second end of the second bias resistor serves as a second control voltage input end of the series-parallel combination module.

4. A single-pole double-throw switch circuit suitable for wideband applications according to claim 3, characterized in that: The transistor with active area series-parallel width combination includes: Equivalent series transistors and equivalent parallel transistors; where, The source of the equivalent series transistor is used as the first end of the transistor of the active area series-parallel width combination, the gate is used as the series part control end of the transistor of the active area series-parallel width combination, and the drain is used as the second end of the transistor of the active area series-parallel width combination; The source of the equivalent parallel transistor is connected to the drain of the equivalent series transistor, the gate serves as the parallel part control terminal of the transistor of the active area series-parallel width combination, and the drain is grounded.

5. A single-pole double-throw switch circuit suitable for wideband applications according to claim 4, characterized in that: The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module each include a series part and a parallel part.

6. A single-pole double-throw switch circuit suitable for wideband applications according to claim 5, characterized in that: The series connection part includes: the equivalent series transistor and the first bias resistor.

7. A single-pole double-throw switch circuit suitable for wideband applications according to claim 5, characterized in that: The parallel connection part includes: the equivalent parallel connection transistor and the second bias resistor.

8. A single-pole double-throw switch circuit suitable for wideband applications according to claim 4, characterized in that: The first switch branch and the second switch branch respectively control the working state of the single-pole double-throw switch circuit under the control of corresponding control voltages, including: By inputting the first preset voltage as the control voltage V CTL1 and control voltage V CTL4 , control the equivalent series transistors in all the series-parallel combination modules in the first switch branch to be turned on, and control the equivalent parallel transistors in all the series-parallel combination modules in the second switch branch to be turned on; input a second preset voltage as the control voltage V CTL2 and control voltage V CTL3 , controlling the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to turn off, and controlling the equivalent series transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the first switch branch of the single-pole double-throw switch circuit is turned on; By inputting the first preset voltage as the control voltage V CTL2 and control voltage V CTL3 , control the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to be turned on, and control the equivalent series transistors in all the series-parallel combination modules in the second switch branch to be turned on; input a second preset voltage as the control voltage V CTL1 and control voltage V CTL4 , controlling the equivalent series transistors in all the series-parallel combination modules in the first switch branch to turn off, and controlling the equivalent parallel transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the second switch branch of the single-pole double-throw switch circuit is turned on; By inputting the first preset voltage as the control voltage V CTL2 and control voltage V CTL4 , control the equivalent parallel transistors in all the series-parallel combination modules in the first switch branch to be turned on, and control the equivalent parallel transistors in all the series-parallel combination modules in the second switch branch to be turned on; input a second preset voltage as the control voltage V CTL1 and control voltage V CTL3 , control the equivalent series transistors in all the series-parallel combination modules in the first switch branch to turn off, control the equivalent series transistors in all the series-parallel combination modules in the second switch branch to turn off, so that the single-pole double-throw switch circuit is turned off.

9. An electronic device, characterized in that: The invention comprises a single-pole double-throw switch circuit suitable for wide-band applications as described in any one of claims 1 to 8.

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