Semiconductor explosion protection type semiconductor press-fitting unit, machine head and power submodule

Abstract

The invention provides a semiconductor explosion protection type semiconductor press-fitting unit, a machine head and a power submodule, and the unit comprises a press-fitting mechanism, an IGBT and a radiator which are arranged in the press-fitting mechanism in a penetrating and stacking manner, and an insulating fence which is arranged around the peripheral side of an IGBT device, and an explosion protection cavity is formed between the insulating fence and the radiator at the two sides of the surrounded IGBT device. A gap is formed between the insulating fence and at least one radiator adjacent to the insulating fence, and the gap is communicated with the explosion protection cavity; the unit and the sub-module can contain chips formed after an IGBT device explodes through the arrangement of an insulating fence. The gap is formed between the insulating fence and the radiator, so that most of explosion scraps can be prevented from leaking outwards, devices outside the power sub-module are prevented from being damaged by the explosion scraps, impact wave pressure can be released, and damage of explosion impact to the radiator structure is reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of flexible direct current power transmission, and in particular relates to a semiconductor explosion protection type semiconductor press-fit unit, a machine head, and a power submodule. Background Art

[0002] With the rapid development of power electronics technology, Insulated Gate Bipolar Transistor (IGBT), as a high-efficiency and high-reliability power semiconductor device, has been widely used in many fields such as power transmission, industrial control, renewable energy generation, electric vehicles and rail transportation. IGBT has become one of the core components in modern power electronic equipment with its excellent switching performance, low conduction loss and high integration.

[0003] However, in the actual application of IGBT devices, especially when dealing with high voltage, high current and frequent switching conditions, significant heat accumulation may occur inside, causing the device temperature to rise. When the temperature exceeds the tolerance limit of the IGBT material, it will not only cause the device performance to deteriorate, but also may cause thermal runaway, further leading to damage to the internal structure of the device, and even causing serious safety accidents such as explosions. In addition, in specific application environments, such as coal mines, petrochemicals and other places where flammable and explosive gases exist, the failure of IGBT devices may also cause fires or explosions, posing a huge threat to personal safety and equipment facilities.

[0004] In view of this, how to better avoid the failure or damage of other equipment caused by IGBT failure and explosion, and provide strong protection for the safe operation of power electronic systems, is a problem that needs to be solved at present. Summary of the invention

[0005] In order to overcome the deficiencies of the semiconductor explosion protection function in the above-mentioned prior art, the present invention proposes a semiconductor explosion protection type semiconductor press-fit unit, comprising: a press-fit mechanism, at least two heat sinks press-fitted in the press-fit mechanism, an IGBT device sandwiched between two adjacent heat sinks, and an insulating enclosure arranged around the circumference of the IGBT device, an explosion protection cavity is formed between the insulating enclosure and the heat sinks on both sides of the surrounded IGBT device, and there is a gap between the insulating enclosure and at least one of the adjacent heat sinks, and the gap connects the explosion protection cavity with the outside.

[0006] Preferably, the radiator includes a radiator shell, a conical protrusion arranged on the side of the radiator shell close to the IGBT device, and a water cooling channel arranged in the radiator shell; the conical protrusion is in contact with the circulation area of ​​the IGBT device; the water cooling channel is arranged in the radiator shell in the area corresponding to the conical protrusion, and the part of the radiator shell corresponding to the outer edge of the circulation area is a solid structure.

[0007] Preferably, the inclination angle of the arc-shaped side surface of the truncated cone protrusion is 30° to 60°.

[0008] Preferably, the water cooling channel is connected to an external water cooling device via a water pipe assembly, and the water pipe assembly is arranged outside the press-fitting mechanism.

[0009] Preferably, the shape of the explosion protection cavity is consistent with the shape of the IGBT device.

[0010] Preferably, the width of the gap is 3mm-5mm.

[0011] Preferably, the insulating enclosure comprises two half enclosures spliced ​​to each other, a mounting plate is provided on the half enclosure, and the insulating enclosure is connected to the radiator via the mounting plate.

[0012] Preferably, ribs are provided on the insulating enclosure.

[0013] Preferably, it further comprises: a bottom plate arranged on the press-fitting mechanism and a busbar assembly arranged around the outer circumference of the press-fitting mechanism and connected to the IGBT device.

[0014] Preferably, a drainage channel is provided on the upper surface of the bottom plate, and the bottom of the drainage channel has an inclination angle inclined toward the opening direction of the drainage channel.

[0015] Preferably, the heat sink, the IGBT device and the press-fitting mechanism are coaxially arranged.

[0016] Based on the same inventive concept, the present invention also provides a semiconductor power submodule head, comprising: the semiconductor press-fit unit as described above, a bypass switch connected to the semiconductor press-fit unit, and a board assembly.

[0017] Based on the same inventive concept, the present invention also provides a semiconductor power submodule, comprising: a semiconductor power submodule head as above, a capacitor and a base connected to a semiconductor press-fit unit in the semiconductor power submodule head;

[0018] The semiconductor press-packing unit, the bypass switch and the capacitor are all arranged on the base.

[0019] Preferably, the bypass switch, the board assembly in the semiconductor power sub-module head and the capacitor are arranged in parallel with the length direction of the semiconductor press-fit unit.

[0020] Compared with the closest prior art, the present invention has the following beneficial effects:

[0021] The present invention provides a semiconductor explosion protection type semiconductor press-fitting unit, a machine head, and a power submodule, comprising a press-fitting mechanism, an IGBT and a heat sink interlaced and stacked in the press-fitting mechanism, and an insulating enclosure arranged around the circumference of the IGBT device, an explosion protection cavity is formed between the insulating enclosure and the heat sinks on both sides of the surrounded IGBT device, a gap is provided between the insulating enclosure and at least one of the adjacent heat sinks, and the gap is connected to the explosion protection cavity; the unit and the submodule can contain debris formed after the explosion of the IGBT device by arranging the insulating enclosure; by arranging the gap between the insulating enclosure and the heat sink, most of the explosion debris can be prevented from leaking out, thereby preventing the explosion debris from damaging the devices outside the power submodule, and the shock wave pressure can be released, thereby reducing the damage of the explosion shock to the heat sink structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic structural diagram of a semiconductor explosion protection type semiconductor press-packing unit provided by the present invention;

[0023] Figure 2 for Figure 1 Exploded view of;

[0024] Figure 3 A schematic diagram of the structure of the insulating enclosure provided by the present invention;

[0025] Figure 4 A schematic diagram of the structure of the radiator provided by the present invention;

[0026] Figure 5 A schematic diagram of the structure of the base plate provided by the present invention;

[0027] Figure 6 A schematic diagram of the structure of a semiconductor power submodule head and a semiconductor power submodule provided by the present invention;

[0028] Figure 7 for Figure 6 The main view;

[0029] Figure 8 for Figure 6 Left view of

[0030] Fig. 9 for Figure 6 A top view of

[0031] Among them, 1. semiconductor press unit; 2. bypass switch; 3. board assembly; 4. capacitor; 5. base;

[0032] 11. Bottom plate; 12. Press-fit mechanism; 13. Right busbar; 14. IGBT device; 15. Insulation enclosure; 16. Rear busbar; 17. Water pipe assembly; 18. Radiator; 181. Radiator housing; 182. Conical protrusion; 19. Left busbar; 20. Mounting plate; 21. Drainage channel. DETAILED DESCRIPTION

[0033] The specific implementation modes of the present invention are further described in detail below with reference to the accompanying drawings.

[0034] Embodiment 1:

[0035] The present invention provides a semiconductor explosion protection type semiconductor press-packing unit, such as Figure 1 and Figure 2 As shown, it includes: a press-fitting mechanism 12, at least two heat sinks 18 press-fitted in the press-fitting mechanism 12, an IGBT device 14 sandwiched between two adjacent heat sinks 18, and an insulating enclosure 15 arranged around the circumference of the IGBT device 14, an explosion protection cavity is formed between the insulating enclosure 15 and the heat sinks 18 on both sides of the surrounded IGBT device 14, and there is a gap between the insulating enclosure 15 and at least one of the adjacent heat sinks 18, and the gap connects the explosion protection cavity with the outside.

[0036] In view of the explosion risk that may be caused by the operation of IGBT in a high-power, high-temperature environment, in order to prevent the splashing of fragments after the explosion of the IGBT device 14 and protect the safety of surrounding equipment, this structure is capable of containing the debris formed after the explosion of the IGBT device 14 by setting an insulating enclosure 15; by setting a gap between the insulating enclosure 15 and the heat sink 18, it can prevent most of the explosion debris from leaking out, thereby preventing the explosion debris from damaging devices outside the power sub-module, and can release the shock wave pressure, reduce the damage of the explosion shock to the heat sink 18 structure, thereby realizing an effective protection mechanism to curb the splashing of fragments during the explosion.

[0037] In this embodiment, the number of the IGBT devices 14 is one or more, preferably, Figure 2 As shown, there are multiple IGBT devices 14, and the multiple IGBT devices 14 and the multiple heat sinks 18 are arranged alternately, so that each IGBT device 14 has a heat sink 18 on both sides, and the axis formed by the interlaced arrangement of the IGBT devices 14 and the heat sink 18 is arranged in the same direction and parallel to the length direction of the basic functional unit, namely the semiconductor power sub-module.

[0038] In this embodiment, the press-fit mechanism 12 is similar to a reaction frame structure, which press-fits a plurality of IGBT devices 14 and the heat sinks 18 on both sides of the IGBT devices 14 together to realize a press-fit semiconductor structure.

[0039] In this embodiment, the insulating enclosure 15 and the heat sink 18 adopt a high-strength, impact-resistant protective shell. When the IGBT explodes unexpectedly, the explosion energy can be quickly dispersed to prevent fragments from scattering, thereby protecting adjacent power electronic equipment, control systems and operators from harm and ensuring the safety of the overall power system.

[0040] Specifically, the insulating enclosure 15 is disposed on both sides of every two adjacent heat sinks 18 and outside each IGBT device 14 to contain debris formed after the explosion of the IGBT device 14 .

[0041] In a possible implementation, the insulating enclosure 15 is installed on the heat sink 18 on one side thereof by a mechanical device, and maintains a certain gap, i.e., a clearance, with the heat sink 18 on the other side thereof during installation. The channel formed by the gap can release the shock wave generated by the explosion of the IGBT; by appropriately adjusting the size of the gap, it is possible to prevent most of the explosion debris from leaking out and release the shock wave pressure.

[0042] In another possible implementation, the insulating enclosure 15 is tightly installed with the radiators 18 on both sides thereof, and a gap is formed between the insulating enclosure 15 and the radiator 18 by opening a groove on the insulating enclosure 15 or at least one radiator 18, so as to prevent most of the explosion debris from leaking out and release the shock wave pressure.

[0043] In this embodiment, the width of the gap is 3mm-5mm.

[0044] It should be noted that if the gap is less than 3mm, the insulation between two adjacent IGBT devices 14 cannot be guaranteed. In addition, through the explosion test of the IGBT device 14, the size of the debris after the explosion of the IGBT device 14 is mostly larger than 5mm. Therefore, designing the gap width within 5mm can block most of the debris after the explosion of the IGBT device 14, and the explosion fragments can be well contained and the fragments can be prevented from leaking.

[0045] In this embodiment, Figure 3 As shown, the insulating enclosure 15 includes two half enclosures spliced ​​to each other, and a mounting plate 20 is provided on the half enclosure. The insulating enclosure 15 is connected to the radiator 18 through the mounting plate 20.

[0046] It should be noted that the insulating enclosure is mounted on the radiator on one side thereof by a mechanical device, namely a mounting plate 20.

[0047] It should be noted that, considering the wide variety and shapes of IGBT devices on the market, the present invention adopts a modular and adjustable frame structure, namely the insulating enclosure 15, and a highly adaptable fixing device, namely the mounting plate 20. The shape of the insulating enclosure 15 is designed according to the shape of the IGBT device 14 protected by it. This design enables the protection device of the present invention, namely the insulating enclosure 15, to be easily adapted to IGBT devices of different sizes and shapes, and can achieve rapid installation and replacement without complex modifications to the original equipment, which greatly improves the versatility and flexibility of the product and reduces the user's use cost and maintenance difficulty.

[0048] In this embodiment, ribs are provided on the insulating enclosure 15 .

[0049] Specifically, ribs are designed on the outer and inner rings of the insulating enclosure 15, which can reduce the weight of the insulating enclosure and provide sufficient mechanical strength.

[0050] In this embodiment, Figure 4 As shown, the radiator 18 includes a radiator shell 181, a conical protrusion 182 arranged on the side of the radiator shell 181 close to the IGBT device 14, and a water cooling channel arranged in the radiator shell 181; the conical protrusion 182 is in contact with the circulation area of ​​the IGBT device 14; the water cooling channel is arranged in the radiator shell 181 in the area corresponding to the conical protrusion 182, and the part of the radiator shell 181 corresponding to the outer edge of the circulation area is a solid structure.

[0051] In this embodiment, the heat sink housing 181 and the truncated cone protrusion 182 are integrally formed;

[0052] In this embodiment, the water cooling channel is connected to an external water cooling device via a water pipe assembly 17 , and the water pipe assembly 17 is disposed outside the press-fitting mechanism 12 .

[0053] It should be noted that the external water cooling device adopts one or more of an air cooler and a cooling tower.

[0054] In this embodiment, the top of the radiator housing 181 is provided with a water inlet and a water outlet for a water cooling channel, and the water cooling channels between the multiple radiators 18 are connected in series through a water pipe assembly 17. Figure 1 As shown, the water outlet of the first radiator 18 is connected to the water inlet of the fourth radiator 18, the water outlet of the fourth radiator 18 is connected to the water inlet of the third radiator 18, the water outlet of the third radiator 18 is connected to the water inlet of the second radiator 18, the water outlet of the second radiator 18 is the water outlet of the entire subunit, and the water inlet of the first radiator 18 and the water outlet of the second radiator 18 are connected to an external water cooling device through a water pipe assembly 17.

[0055] It should be noted that the internal water cooling channel and the shape of the heat sink 18 are specially designed. Specifically, the portion of the heat sink 18 that contacts the outer edge of the flow area of ​​the IGBT device 14 avoids setting the internal water cooling channel, but supports the area with solid materials, that is, the water cooling channel is set in the area corresponding to the truncated cone protrusion 182; the portion of the heat sink 18 that is completely in contact with the flow area of ​​the IGBT device 14 is designed with a protrusion area, that is, the truncated cone protrusion 182, and preferably, the transition part between this area and other areas is designed to be at an inclination of 45°, which can disperse the impact force perpendicular to the plane of the heat sink 18 to the horizontal plane, thereby evenly transmitting the explosion force to other areas. This design can withstand the impact load generated by the IGBT during failure explosion, ensure that the liquid inside the heat sink will not leak and the heat sink can still meet the function of current passing.

[0056] In this embodiment, the inclination angle of the arc-shaped side surface of the truncated cone protrusion 182 is 30° to 60°.

[0057] Preferably, the inclination angle of the arc-shaped side surface of the truncated cone protrusion 182 is 45°, that is, the transition portion between the protrusion area and other areas of the heat sink is designed to have an inclination angle of 45°.

[0058] In this embodiment, the shape of the explosion protection cavity matches the shape of the IGBT device 14 .

[0059] In this embodiment, it also includes: a bottom plate 11 arranged on the press-fitting mechanism 12 and a busbar assembly arranged around the outer circumference of the press-fitting mechanism 12 and connected to the IGBT device 14 .

[0060] In this embodiment, Figure 2 As shown, the busbar assembly includes a left busbar 19 and a right busbar 13 arranged on the left and right sides of the press-fitting mechanism 12, based on the rear busbar 16 arranged on the rear side of the press-fitting mechanism 12, the rear busbar 16 and the left busbar 19 are connected to the capacitor 4 and the IGBT device 14, the right busbar 13 is connected to the IGBT device 14, and one end of the right busbar 13 and the left busbar 19 serves as the external connection terminal of the semiconductor power sub-module. The left busbar 19 and the right busbar 13 are both current paths of the functional units and can form a buffer wall. When an explosion occurs, the overflow of the explosion shock wave can be effectively reduced to avoid damaging the equipment on both sides.

[0061] It should be noted that, considering the comprehensive protection of the surrounding environment, the present invention accurately calculates the layout and size of the above protection devices through the combination of the bottom plate 11, the busbar assembly, the heat sink 18 and the insulating enclosure 15, ensuring that when the IGBT explodes, its protection range can fully cover and effectively isolate key components such as adjacent water pipes and circuit boards to prevent secondary damage caused by splashing debris or shock waves. This all-round protection strategy further improves the stability and reliability of the entire power transmission system and reduces downtime and economic losses caused by equipment failure.

[0062] In this embodiment, Figure 5 As shown, a drainage channel 21 is opened on the upper surface of the bottom plate 11 , and the bottom of the drainage channel 21 has an inclination angle inclined toward the opening direction of the drainage channel 21 .

[0063] It should be noted that the bottom plate 11 can provide assembly support for the press-fit mechanism 12 and the bypass switch 2, and resist the shock wave generated by the IGBT explosion from overflowing downward; a drainage channel 21 is provided on the bottom plate 11 to discharge the leaked water outward, the drainage channel 21 is staggered horizontally and vertically, and faces the submodule terminal in the direction of the opening, and the bottom of the drainage channel 21 is inclined by not less than 2°, which can guide the liquid leaking from the radiator or water pipe to a specific position and discharge it outside the functional unit. In addition, the raised structure of the bottom plate 11 formed by the drainage channel 21 enhances the rigidity of the bottom plate 11, which can better resist the explosion shock wave.

[0064] In this embodiment, the heat sink 18 , the IGBT device 14 and the press-fit mechanism 12 are coaxially arranged.

[0065] In order to solve the explosion problem of the IGBT device 14 under extreme working conditions, the semiconductor press-fit unit, through a unique structural design, combines an explosion protection cavity and a heat sink 18 to achieve comprehensive multiple safety protection functions for the IGBT device and its surrounding environment, thereby improving the safety and reliability of the power transmission system, reducing operation and maintenance costs, ensuring the stable operation of the power transmission system and the safety of the surrounding environment, and providing strong technical support and guarantee for the development of the power industry.

[0066] Example 2

[0067] Based on the same inventive concept, the present invention also provides a semiconductor power submodule head, such as Figure 6 As shown, it includes: a semiconductor pressing unit 1 as in the above embodiment, a bypass switch 2 connected to the semiconductor pressing unit 1 and a board assembly 3.

[0068] In this embodiment, the bypass switch 2 is arranged on the front side of the semiconductor press unit 1, the board assembly 3 is arranged on the upper side of the semiconductor press unit 1, and the capacitor 4 is arranged on the rear side of the semiconductor press unit 1. The semiconductor press unit 1, the bypass switch 2 and the board assembly 3 can be assembled into a complete component, which can be called a machine head. In a physical sense, this machine head can be disassembled and replaced as a whole from the functional unit, and can be transported externally.

[0069] Example 3

[0070] Based on the same inventive concept, the present invention also provides a semiconductor power submodule, such as Figure 6 As shown, it includes: a semiconductor power submodule head as in the above embodiment, a capacitor 4 and a base 5 connected to a semiconductor press-fit unit 1 in the semiconductor power submodule head;

[0071] The semiconductor press-packed unit 1 , the bypass switch 2 and the capacitor 4 are all arranged on the base 5 .

[0072] It should be noted that the basic functional unit, i.e., the semiconductor power submodule, is a key component of the flexible DC converter valve, and is composed of components such as IGBT, thyristor, capacitor, bypass switch, etc., and is responsible for converting AC power into DC power, and converting DC power back to AC power when necessary. The basic functional unit provided by the present invention not only realizes the above functions, but also has explosion-proof measures for the failure of IGBT devices.

[0073] In this embodiment, Figures 7 to 9 As shown, the bypass switch 2 , the board assembly 3 in the semiconductor power sub-module head and the capacitor 4 are arranged in parallel with the length direction of the semiconductor press-fit unit 1 .

[0074] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit its protection scope. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that after reading the present invention, those skilled in the art can still make various changes, modifications or equivalent substitutions to the specific implementation methods of the application, but these changes, modifications or equivalent substitutions are all within the protection scope of the claims of the present invention.

Claims

1. A semiconductor explosion protection type semiconductor press-packing unit, characterized in that: include: A press-fitting mechanism (12), at least two heat sinks (18) press-fitted in the press-fitting mechanism (12), an IGBT device (14) sandwiched between two adjacent heat sinks (18), and an insulating enclosure (15) arranged around the circumference of the IGBT device (14), wherein an explosion protection cavity is formed between the insulating enclosure (15) and the heat sinks (18) on both sides of the surrounded IGBT device (14), and there is a gap between the insulating enclosure (15) and at least one of the adjacent heat sinks (18), wherein the gap enables the explosion protection cavity to communicate with the outside.

2. A semiconductor explosion protection type semiconductor press-packed unit according to claim 1, characterized in that: The heat sink (18) comprises a heat sink shell (181), a truncated cone protrusion (182) arranged on a side of the heat sink shell (181) close to the IGBT device (14), and a water cooling channel arranged in the heat sink shell (181); the truncated cone protrusion (182) is in contact with a circulation area of ​​the IGBT device (14); the water cooling channel is arranged in the heat sink shell (181) in an area corresponding to the truncated cone protrusion (182), and a portion of the heat sink shell (181) corresponding to an outer edge of the circulation area is a solid structure.

3. A semiconductor explosion protection type semiconductor press-packed unit as claimed in claim 2, characterized in that: The inclination angle of the arc-shaped side surface of the truncated cone protrusion (182) is 30° to 60°.

4. A semiconductor explosion protection type semiconductor press-packed unit as claimed in claim 2, characterized in that: The water cooling channel is connected to an external water cooling device via a water pipe assembly (17), and the water pipe assembly (17) is arranged outside the press-fitting mechanism (12).

5. A semiconductor explosion protection type semiconductor press-packed unit as claimed in claim 1 or 2, characterized in that: The shape of the explosion protection cavity matches the shape of the IGBT device (14).

6. A semiconductor explosion protection type semiconductor press-packed unit as claimed in claim 1 or 2, characterized in that: The width of the gap is 3mm-5mm.

7. A semiconductor explosion protection type semiconductor press-packed unit as claimed in claim 1 or 2, characterized in that: The insulating enclosure (15) comprises two half enclosures spliced ​​to each other, a mounting plate (20) is provided on the half enclosure, and the insulating enclosure (15) is connected to the radiator (18) via the mounting plate (20).

8. A semiconductor explosion protection type semiconductor press-packed unit as claimed in claim 1 or 2, characterized in that: The insulating enclosure (15) is provided with ribs.

9. A semiconductor explosion protection type semiconductor press-packed unit as claimed in claim 1 or 2, characterized in that: Also includes: A base plate (11) arranged on the press-fitting mechanism (12) and a busbar assembly arranged around the outer periphery of the press-fitting mechanism (12) and connected to the IGBT device (14).

10. A semiconductor explosion protection type semiconductor press-packed unit according to claim 9, characterized in that: A drainage channel (21) is provided on the upper surface of the bottom plate (11), and the bottom of the drainage channel (21) has an inclination angle inclined towards the opening direction of the drainage channel (21).

11. A semiconductor explosion protection type semiconductor press-packed unit according to claim 1 or 2, characterized in that: The heat sink (18), the IGBT device (14) and the press-fitting mechanism (12) are coaxially arranged.

12. A semiconductor power submodule head, characterized in that: include: A semiconductor press-fit unit (1) as claimed in any one of claims 1 to 11, a bypass switch (2) and a board assembly (3) connected to the semiconductor press-fit unit (1).

13. A semiconductor power submodule, characterized in that: include: The semiconductor power submodule head according to claim 12, a capacitor (4) and a base (5) connected to the semiconductor press-fit unit (1) in the semiconductor power submodule head; The semiconductor press-fit unit (1), bypass switch (2) and capacitor (4) are all arranged on the base (5).

14. A semiconductor power submodule according to any one of claim 13, characterized in that: The bypass switch (2), the board assembly (3) in the semiconductor power submodule head and the capacitor (4) are arranged in parallel with the length direction of the semiconductor press-fit unit (1).

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