Display panel, display device and manufacturing method of display panel

Abstract

The invention provides a display panel, a display device and a manufacturing method of the display panel, the display panel comprises an opening area and a non-opening area, and the display panel comprises a substrate; the first insulating layer is located on one side of the substrate, the first insulating layer is provided with a hollowed-out area and a non-hollowed-out area, the hollowed-out area is located on one side of the non-hollowed-out area, the hollowed-out area and the opening area are at least partially overlapped, and the material of the first insulating layer is an inorganic material; the second insulating layers are located in the hollow-out area and the non-hollow-out area, the second insulating layers are made of organic materials, and the thickness of the second insulating layers located in the non-hollow-out area is smaller than that of the second insulating layers located in the hollow-out area. The technical problem that in the prior art, the transmittance of a display panel is not good is solved.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display panel, a display device, and a method for manufacturing a display panel. Background Art

[0002] Thin Film Transistor-Liquid Crystal Display (TFT-LCD) is a display technology that combines thin film transistors and liquid crystal display technologies. It has a thin film transistor on each pixel, which allows each pixel to be controlled independently, thereby overcoming the crosstalk when not selected and improving the display quality. However, due to the influence of factors such as pixel aperture ratio, liquid crystal transmittance, polarizer transmittance, and color filter transmittance, the transmittance of the display panel is poor.

[0003] Therefore, there is an urgent need for a display panel that can solve the technical problem of poor transmittance of display panels in the prior art. Summary of the invention

[0004] The main purpose of the present invention is to provide a display panel, a display device and a method for manufacturing a display panel to solve the problem of poor transmittance of the display panel in the prior art.

[0005] In order to achieve the above-mentioned purpose, according to one aspect of the present invention, a display panel is provided, the display panel comprising an opening area and a non-opening area, the display panel comprising: a base substrate; a first insulating layer, located on one side of the base substrate, the first insulating layer having a hollow area and a non-hollow area, the hollow area is located on one side of the non-hollow area, the hollow area at least partially overlaps with the opening area, and the material of the first insulating layer is an inorganic material; a second insulating layer, located in the hollow area and the non-hollow area, the material of the second insulating layer is an organic material, and the thickness of the second insulating layer located in the non-hollow area is less than the thickness of the second insulating layer located in the hollow area.

[0006] In order to achieve the above objective, according to one aspect of the present invention, a display device is provided, comprising: any one of the above display panels.

[0007] In order to achieve the above-mentioned purpose, according to another aspect of the present invention, a method for manufacturing a display panel is provided, wherein the display panel includes an opening area and a non-opening area, and the method includes: providing a base substrate; forming a first preliminary insulating layer on one side of the base substrate, wherein the material of the first preliminary insulating layer is an inorganic material; removing a portion of the first preliminary insulating layer, and the remaining first preliminary insulating layer forms a first insulating layer having a hollow area and a non-hollow area, wherein the hollow area at least partially overlaps with the opening area; forming a second insulating layer in the hollow area and the non-hollow area, wherein the material of the second insulating layer is an organic material.

[0008] The technical solution of the present invention is applied to provide a display panel. By separately designing the structures of the portion of the display panel corresponding to the opening area and the portion corresponding to the non-opening area, the opening area corresponds to the hollow area of ​​the first insulating layer, and a second insulating layer is arranged in the hollow area. Since the material of the first insulating layer is an inorganic material and the material of the second insulating layer is an organic material, the number of optical interfaces in the opening area can be reduced by replacing the original inorganic material with an organic material. At the same time, since the non-opening area corresponds to the non-hollowing area of ​​the first insulating layer, the reflectivity is reduced without affecting the original film structure of the non-opening area of ​​the display panel, thereby improving the transmittance of the display panel, solving the technical problem of how to increase the transmittance of the display panel in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0010] Figure 1 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0011] Figure 2 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0012] Figure 3 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0013] Figure 4 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0014] Figure 5 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0015] Figure 6 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0016] Figure 7 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0017] Figure 8 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0018] Fig. 9 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0019] Fig.10 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0020] Fig.11 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0021] Fig.12 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0022] Fig.13 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0023] Fig.14 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0024] Fig.15 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0025] Fig.16 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0026] Fig.17 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0027] Fig.18 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0028] Fig.19 A schematic structural diagram of a display panel provided according to an embodiment of the present invention is shown;

[0029] Fig. 20 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0030] Fig.21A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0031] Fig. 22 A schematic structural diagram of another display panel provided according to an embodiment of the present invention is shown;

[0032] Fig.23 A schematic structural diagram of a display device provided according to an embodiment of the present invention is shown;

[0033] Fig.24 A schematic flow chart of a method for manufacturing a display panel provided according to an embodiment of the present invention is shown;

[0034] Fig.25 A schematic structural diagram corresponding to each step in a method for manufacturing a display panel provided according to an embodiment of the present invention is shown;

[0035] Fig.26 A schematic flow chart of step S1011 in a method for manufacturing a display panel provided according to an embodiment of the present invention is shown;

[0036] Fig. 27 A schematic flow chart of step S1031 in a method for manufacturing a display panel according to an embodiment of the present invention is shown;

[0037] Fig.28 A schematic flow chart of step S1032 in a method for manufacturing a display panel provided according to an embodiment of the present invention is shown.

[0038] The above drawings include the following reference numerals:

[0039] 01. display area; 02. non-display area; 10. opening area; 11. non-opening area; 12. base substrate; 13. first insulating layer; 131. hollow area; 132. non-hollow area; 14. second insulating layer; 141. first sub-insulating layer; 142. second sub-insulating layer; 15. third insulating layer; 16. fourth insulating layer; 17. fifth insulating layer; 18. touch signal line; 19. sixth insulating layer; 20. common electrode layer; 21. seventh insulating layer; 22. eighth insulating layer; 23. ninth insulating layer; 24. thin film transistor; 241. gate; 242. active layer; 243. source; 244. drain; 25. tenth insulating layer; 26. pixel electrode layer; 30. first preliminary insulating layer; 100. display panel. DETAILED DESCRIPTION

[0040] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0041] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0042] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present invention described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0043] As introduced in the background art, the transmittance of the display panel in the prior art is poor. In order to solve the above technical problems, the present application proposes a display panel, a display device and a method for manufacturing the display panel.

[0044] Figure 1 is a top view of a display panel according to an embodiment of the present application, such as Figure 1 As shown, the display panel includes a portion corresponding to a display area 01 and a portion corresponding to a non-display area 02, wherein the display area 01 refers to an area of ​​the display panel used to display images, and the non-display area 02 refers to a frame area outside the display area of ​​the display panel. The display area 01 includes an array-arranged opening area 10 and a non-opening area 11 outside the opening area 10.

[0045] Figure 2 is along Figure 1 The cross-section view in the AA` direction is as follows: Figures 2 to 14 As shown, the display panel includes an opening area 10 and a non-opening area 11, and the display panel includes:

[0046] Base substrate 12;

[0047] Specifically, in the display panel, the opening areas 10 may be arranged in an array, and the non-opening areas 11 are located except for the opening areas 10. In practical applications, one opening area 10 corresponds to one sub-pixel, and the sub-pixel is displayed through the corresponding opening area 10.

[0048] A first insulating layer 13 is located on one side of the base substrate 12. The first insulating layer 13 has a hollow area 131 and a non-hollow area 132. The hollow area 131 is located on one side of the non-hollow area 132. The hollow area 131 at least partially overlaps with the opening area 10. The material of the first insulating layer 13 is an inorganic material.

[0049] Specifically, the first insulating layer 13 may be a single-layer structure or a multi-layer structure. It should be noted that the thickness of the first insulating layer 13 in the non-hollow area 132 is greater than the thickness in the hollow area 131, that is, the thickness of the first insulating layer in the non-hollow area 132 is not 0, and the thickness of the first insulating layer 13 in the hollow area 131 is 0. The non-hollow area 132 may at least partially overlap with the non-opening area 11. In practical applications, Figure 2 As shown, the hollow area 131 can completely overlap with the opening area 10; Figure 3 As shown, the hollow area 131 may partially overlap with the opening area 10, or the non-hollow area 132 may partially overlap with the non-opening area 11. The first insulating layer 13 may be any inorganic insulating material, and the present application does not limit the type of material of the first insulating layer 13.

[0050] The second insulating layer 14 is located in the hollow area 131 and the non-hollow area 132 . The material of the second insulating layer 14 is an organic material. The thickness of the second insulating layer 14 located in the non-hollow area 132 is less than the thickness of the second insulating layer 14 located in the hollow area 131 .

[0051] In an embodiment of the present application, a display panel is provided, wherein the structure of the portion of the display panel corresponding to the opening area and the portion corresponding to the non-opening area are designed separately, wherein the opening area corresponds to the hollow area of ​​the first insulating layer, and a second insulating layer is arranged in the hollow area. Since the material of the first insulating layer is an inorganic material, it can be formed by chemical deposition, and the material of the second insulating layer is an organic material, it can be formed by coating. Organic materials are used to replace the original inorganic materials. Due to the leveling characteristics of organic materials, the surface of the second insulating layer away from the base substrate can be made flush in the hollow area and the non-hollow area as much as possible, thereby reducing the number of optical interfaces in the opening area. At the same time, since the non-opening area corresponds to the non-hollow area of ​​the first insulating layer, the reflectivity is reduced without affecting the original film structure of the non-opening area of ​​the display panel, thereby improving the transmittance of the display panel, solving the technical problem of how to increase the transmittance of the display panel in the prior art.

[0052] In another specific embodiment, Figure 2 and Figure 3As shown, the second insulating layer 14 is located on the side of the first insulating layer 13 away from the base substrate 12. The surface of the second insulating layer 14 located in the hollow area 131 away from the base substrate 12 can be flush with the surface of the second insulating layer 14 located in the non-hollow area 132 away from the base substrate 12. The specific position setting of the second insulating layer 14 can form the second insulating layer 14 in the hollow area 131 and the second insulating layer 14 in the non-hollow area 132 in one process step, further reducing the process flow and saving the production time of the display panel.

[0053] Specifically, the formation process of the display panel including the above-mentioned second insulating layer is as follows: providing a base substrate; forming a first preliminary insulating layer on a side surface of the base substrate; removing part of the first preliminary insulating layer to form a hollow area, and the remaining first preliminary insulating layer forms a first insulating layer to obtain a first preliminary structure; forming a second insulating layer on the exposed surface of the first preliminary structure.

[0054] In another specific embodiment, Figure 4 As shown, the display panel further includes: a third insulating layer 15, which is located in the hollow area 131 and the non-hollow area 132, and the thickness of the third insulating layer 15 located in the hollow area 131 may be equal to or unequal to the thickness of the third insulating layer 15 located in the non-hollow area 132. The third insulating layer 15 is located between the base substrate 12 and the second insulating layer 14 and between the base substrate 12 and the first insulating layer 13. The third insulating layer 15 can be used as a buffer layer of the display panel to relieve stress caused by lattice constant mismatch between the base substrate 12 and the first insulating layer 13 or the second insulating layer 14, and further improve the performance of the display panel.

[0055] Specifically, the formation process of the display panel including the above-mentioned third insulating layer is as follows: providing a base substrate; forming a third insulating layer on a side surface of the base substrate; forming a first preliminary insulating layer on a surface of the third insulating layer away from the base substrate; removing part of the first preliminary insulating layer to form a hollow area, and the remaining first preliminary insulating layer forms a first insulating layer to obtain a second preliminary structure; and forming a second insulating layer on the exposed surface of the second preliminary structure.

[0056] In order to further improve the transmittance of the display panel, the material of the third insulating layer is different from the material of the second insulating layer. Since the material of the second insulating layer is an organic material, the material of the third insulating layer can be an inorganic material.

[0057] Specifically, the third insulating layer may be made of one or more of silicon oxide or silicon nitride.

[0058] In another specific embodiment, the material of the third insulating layer is silicon nitride. The buffer layer in the prior art is generally a double-layer or multi-layer structure composed of silicon nitride and silicon oxide. Since the refractive index of the silicon nitride layer and the silicon oxide layer is different, reflection occurs at the junction of the silicon nitride layer and the silicon oxide layer, resulting in a large light loss when the light passes through the interface between the silicon nitride layer and the silicon oxide layer, thereby causing the transmittance of the opening area to decrease. In other words, the material of the third insulating layer is silicon nitride, which is based on the prior art. Removing the silicon oxide can further improve the transmittance of the opening area.

[0059] like Figure 5 As shown, the display panel further includes: a fourth insulating layer 16, which is located in the hollow area 131 and the non-hollow area 132, and the thickness of the fourth insulating layer 16 located in the hollow area 131 may be equal to or unequal to the thickness of the fourth insulating layer 16 located in the non-hollow area 132. And it is located between the base substrate 12 and the second insulating layer 14. The fourth insulating layer 16 can be used as an interlayer insulating layer of the display panel to achieve insulation between metals inside the device, and reduce the parasitic capacitance between the metal material and the base substrate, further improving the performance of the display panel.

[0060] In practical applications, the fourth insulating layer located in the hollow area can be formed simultaneously with the fourth insulating layer located in the hollow area, or they can be formed separately. The formation process of the display panel including the fourth insulating layer is as follows: providing a base substrate; forming a first preliminary insulating layer on a surface of one side of the base substrate; removing part of the first preliminary insulating layer to form a hollow area, and the remaining first preliminary insulating layer forms a first insulating layer to obtain a third preliminary structure; forming a fourth insulating layer on the exposed surface of the third preliminary structure.

[0061] In another specific embodiment, the material of the fourth insulating layer is different from the material of the second insulating layer. Since the material of the second insulating layer is an organic material, the material of the fourth insulating layer may be an inorganic material.

[0062] Specifically, the fourth insulating layer may be made of one or more of silicon oxide or silicon nitride.

[0063] In another specific embodiment, the material of the fourth insulating layer is silicon nitride. The interlayer insulating layer in the prior art is generally a double-layer or multi-layer structure composed of silicon nitride and silicon oxide. Since the refractive index of the silicon nitride layer and the silicon oxide layer is different, reflection occurs at the junction of the silicon nitride layer and the silicon oxide layer, resulting in a large light loss when the light passes through the interface of the silicon nitride layer and the silicon oxide layer, thereby causing the transmittance of the opening area to decrease. In other words, the material of the fourth insulating layer is silicon nitride, which is based on the prior art. Removing the silicon oxide can further improve the transmittance of the opening area.

[0064] In another specific embodiment, Figure 6 As shown, the display panel further includes: a fifth insulating layer 17, which is located in the hollow area 131 and the non-hollow area 132, and the thickness of the fifth insulating layer 17 located in the hollow area 131 may be equal to or unequal to the thickness of the fifth insulating layer 17 located in the non-hollow area 132. And it is located between the base substrate 12 and the fourth insulating layer 16. The fifth insulating layer 17 can be used as an interlayer insulating layer of the display panel to protect the insulation between metals inside the device, and reduce the parasitic capacitance between the metal material and the base substrate, so as to further improve the performance of the display panel.

[0065] In practical applications, the fifth insulating layer located in the hollow area can be formed simultaneously with the fifth insulating layer located in the hollow area, or they can be formed separately. The formation process of the display panel including the fourth insulating layer and the fifth insulating layer is as follows: providing a base substrate; forming a first preliminary insulating layer on the surface of one side of the base substrate; removing part of the first preliminary insulating layer to form a hollow area, and the remaining first preliminary insulating layer forms a first insulating layer to obtain a third preliminary structure; and sequentially forming a fourth insulating layer and a fifth insulating layer on the exposed surface of the third preliminary structure.

[0066] In order to further improve the stability of the display panel, the fifth insulating layer is made of a different material from the second insulating layer. The fifth insulating layer may be made of an inorganic material.

[0067] Specifically, the fifth insulating layer may be made of one or more of silicon oxide or silicon nitride.

[0068] In another specific embodiment, the material of the fifth insulating layer is silicon oxide. Using silicon oxide and silicon nitride as the interlayer insulating layer can further improve the stability of the interlayer insulating layer.

[0069] In another embodiment, Figure 7 As shown, the display panel includes a base substrate 12, a first insulating layer 13, a fifth insulating layer 17, a fourth insulating layer 16 and a second insulating layer 14 stacked in sequence; the first insulating layer 13, the fourth insulating layer 16 and the fifth insulating layer 17 are located in the non-hollow area 132, and the second insulating layer 14 is located in the hollow area 131 and the non-hollow area 132. That is, after forming the fourth insulating layer 16 and the fifth insulating layer 17, the portion corresponding to the hollow area 131 is removed. The reflective interface of the opening area of ​​the display panel can be further reduced, thereby further improving the transmittance of the display panel, that is, the interface reflection between the first insulating layer 13 and the fifth insulating layer 17, the interface reflection between the fifth insulating layer 17 and the fourth insulating layer 16, and the interface reflection between the fourth insulating layer 16 and the second insulating layer 14 are reduced.

[0070] like Figures 2 to 14 As shown, the difference between the thickness of the second insulating layer 14 located in the hollow area 131 and the thickness of the second insulating layer 14 located in the non-hollow area 132 is less than a predetermined value. The predetermined value may be the thickness of the first insulating layer, for example, 0.05 μm to 0.15 μm. After forming the first insulating layer having the hollow area and the non-hollow area, an uneven step structure is obtained. By setting the second insulating layer, the first insulating layer can be filled, further improving the flatness of the display panel.

[0071] In another specific embodiment, Figure 8 As shown, the display panel further includes: a touch signal line 18, which is located on a side of the second insulating layer 14 away from the base substrate 12. The setting of the touch signal line 18 can further realize the touch function of the display panel, and by sensing and responding to touch input, allow the user to further operate the display panel by directly touching the screen.

[0072] Specifically, the touch signal lines are used to transmit signals to the touch electrodes. In practical applications, the connection between the touch signal lines and the touch electrodes can be achieved by punching.

[0073] In another specific embodiment, Fig. 9 As shown, the display panel further includes: a sixth insulating layer 19, which is located in the hollow area 131 and the non-hollow area 132, and the thickness of the sixth insulating layer 19 in the hollow area 131 and the thickness of the sixth insulating layer 19 in the non-hollow area 132 may be the same or different. And it is located on the side of the second insulating layer 14 away from the base substrate 12 and the side of the touch signal line 18 away from the base substrate 12. Since the touch signal line includes a plurality of touch electrodes, an uneven step structure will be formed, and the sixth insulating layer 19 can help achieve electrical isolation between the touch signal lines, further improve the stability of touch signal transmission, and further improve the touch effect of the display panel.

[0074] Specifically, the formation process of the display panel including the above-mentioned sixth insulating layer is as follows: providing a base substrate; forming a first preliminary insulating layer on the surface of one side of the base substrate; removing part of the first preliminary insulating layer to form a hollow area, and the remaining first preliminary insulating layer forms a first insulating layer to obtain a third preliminary structure; forming a second insulating layer on the exposed surface of the third preliminary structure; forming a touch signal line on the side of the second insulating layer away from the above-mentioned base substrate; forming a sixth insulating layer on the side of the above-mentioned touch signal line away from the base substrate.

[0075] In another specific embodiment, Fig.10As shown, the display panel further includes: a common electrode layer 20, which is located on the side of the sixth insulating layer 19 away from the second insulating layer 14, and the common electrode layer 20 includes a plurality of common electrodes, at least one of which is reused as a touch electrode. In the display stage, the common electrode layer 20 can provide an electric field, and the common electrode can apply a data voltage for displaying an image to control the partial liquid crystal deflection of each sub-pixel unit, thereby realizing image display. In the touch stage, a touch signal is applied to the common electrode to realize touch.

[0076] In another specific embodiment, Figures 10 to 14 As shown, the display panel further includes: a seventh insulating layer 21, located in the hollow area 131 and the non-hollow area 132, the thickness of the seventh insulating layer 21 in the hollow area 131 and the thickness of the seventh insulating layer 21 in the non-hollow area 132 may be the same or different. Located on the side of the sixth insulating layer 19 and the touch signal line 18 away from the second insulating layer 14 and the side of the common electrode layer 20 away from the sixth insulating layer 19. The seventh insulating layer 21 can help achieve electrical isolation between common electrodes, thereby further improving the touch effect of the display panel.

[0077] In another specific embodiment, Fig.11 As shown, the first insulating layer 13 is located on the side of the sixth insulating layer 19 and the touch signal line 18 close to the base substrate 12, and the first insulating layer 13 includes an eighth insulating layer 22 and a ninth insulating layer 23 arranged adjacent to each other. The material of the first insulating layer 13 is an inorganic material, so the materials of the eighth insulating layer 22 and the ninth insulating layer 23 are also inorganic materials. The common electrode layer 20 is located on the side of the sixth insulating layer 19 away from the second insulating layer 14. The arrangement of the eighth insulating layer 22 and the ninth insulating layer 23 can further protect the device.

[0078] Specifically, the materials of the eighth insulating layer and the ninth insulating layer may be one or more of silicon oxide and silicon nitride.

[0079] In a specific embodiment, Fig.11As shown, the display panel further includes a thin film transistor 24 located on one side of the base substrate 12, the thin film transistor 24 includes a gate 241, an active layer 242, a source 243 and a drain 244, and the thin film transistor 24 may be a bottom gate structure or a top gate structure; the thin film transistor 24 may be a low temperature polysilicon thin film transistor or an oxide semiconductor thin film transistor 24. The gate 241 is located on one side of the base substrate 12, the active layer 242 is located on the side of the gate 241 away from the base substrate 12, the source 243 and the drain 244 are respectively located on both sides of the active layer 242, the eighth insulating layer 22 is located between the gate 241 and the active layer 242, and the ninth insulating layer 23 is located on the side of the drain 244 away from the base substrate 12 and the side of the source 243 away from the base substrate 12. The eighth insulating layer 22 can be used as a gate insulating layer to prevent current from flowing directly from the gate 241 to the source 243 or the drain 244, while allowing the electric field to act on the semiconductor layer, thereby controlling the conductivity state of the channel region and further improving the overall performance of the thin film transistor 24. The ninth insulating layer 23 can be used as an interlayer insulating layer to achieve insulation between metals inside the device, further improving the performance of the display panel.

[0080] In some embodiments, Fig.12As shown, the display panel further includes a thin film transistor 24 located on one side of the base substrate 12, the thin film transistor 24 includes a gate 241, an active layer 242, a source 243 and a drain 244, and the thin film transistor 24 may be a bottom gate structure or a top gate structure; the thin film transistor 24 may be a low temperature polysilicon thin film transistor 24 or an oxide semiconductor thin film transistor 24. The gate 241 is located on one side of the base substrate 12, the active layer 242 is located between the gate 241 and the base substrate 12, the source 243 and the drain 244 are respectively located on both sides of the active layer 242, the eighth insulating layer 22 is located between the gate 241 and the active layer 242, and the ninth insulating layer 23 is located on the side of the active layer 242 close to the base substrate 12. The first insulating layer 13 is located on the side of the sixth insulating layer 19 and the touch signal line 18 close to the base substrate 12, and the common electrode layer 20 is located on the side of the sixth insulating layer 19 away from the second insulating layer 14. The eighth insulating layer 22 can be used as a gate insulating layer to prevent current from flowing directly from the gate 241 to the source 243 or the drain 244, while allowing the electric field to act on the semiconductor layer, thereby controlling the conductivity state of the channel region and further improving the overall performance of the thin film transistor 24. The ninth insulating layer 23 can be used as a buffer layer to relieve the stress caused by the lattice constant mismatch between the base substrate 12 and the first insulating layer 13 or the second insulating layer 14, and further improve the performance of the display panel.

[0081] In some embodiments, Fig.13As shown, the first insulating layer further includes a tenth insulating layer 25, and the tenth insulating layer 25 is located on the side of the gate 241 away from the base substrate 12. The tenth insulating layer 25 can be used as an interlayer insulating layer to achieve insulation between metals inside the device, and reduce the parasitic capacitance between the metal material and the base substrate 12, further improving the performance of the display panel. The thin film transistor 24 includes a gate 241, an active layer 242, a source 243 and a drain 244. The eighth insulating layer 22 can be used as a gate insulating layer to prevent current from flowing directly from the gate 241 to the source 243 or the drain 244, while allowing the electric field to act on the semiconductor layer, thereby controlling the conductivity state of the channel region, and further improving the overall performance of the thin film transistor 24. The first insulating layer 13 is located on the side of the sixth insulating layer 19 and the touch signal line 18 close to the base substrate 12, and the common electrode layer 20 is located on the side of the sixth insulating layer 19 away from the second insulating layer 14. The ninth insulating layer 23 can be used as a buffer layer or an interlayer insulating layer. As a buffer layer, it can alleviate the stress caused by the lattice constant mismatch between the base substrate 12 and the first insulating layer 13 or the second insulating layer 14, thereby further improving the performance of the display panel. As an interlayer insulating layer, it can achieve insulation between metals inside the device, thereby further improving the performance of the display panel.

[0082] Specifically, since the material of the first insulating layer is an inorganic material, the material of the tenth insulating layer is also an inorganic material.

[0083] In some embodiments, Fig.13 As shown, the source electrode 243 includes at least a first connection portion, the drain electrode 244 includes at least a second connection portion, one end of the first connection portion and one end of the second connection portion are respectively connected to the active layer 242, the first insulating layer 13 includes a first through hole and a second through hole, the first connection portion is at least located in the first through hole, and the second connection portion is at least located in the second through hole. The source electrode 243 and the drain electrode 244 are respectively connected to the active layer through the first through hole and the second through hole.

[0084] In some embodiments, Fig.14 As shown, the display panel further includes: a pixel electrode layer 26, which is located on the side of the thin film transistor 24 away from the base substrate 12, the thin film transistor 24 includes a gate 241, an active layer 242, a source 243 and a drain 244, and the first insulating layer 13 includes an eighth insulating layer 22 and a ninth insulating layer 23 arranged adjacently. The pixel electrode layer 26 includes a plurality of pixel electrodes arranged at intervals, and the pixel electrode is electrically connected to the source 243 or the drain 244. The pixel electrode layer 26 is used to drive the thin film transistor 24, thereby further realizing the display of an image.

[0085] Specifically, the pixel electrode layer can be made of a transparent conductive material, such as indium tin oxide. In practical applications, the pixel electrode cooperates with the thin film transistor to form a matrix structure, each thin film transistor corresponds to a sub-pixel one by one, controls the color and brightness of each pixel, and the pixel electrode is responsible for controlling the charging and discharging process of the thin film transistor.

[0086] Comparative Example 1

[0087] This embodiment provides a display panel such as Fig.15 As shown, the display panel includes an opening area 10' and a non-opening area 11', and the display panel includes:

[0088] Base substrate 12';

[0089] A first insulating layer 13' is located on one side of the base substrate 12', the first insulating layer 13' is located in the opening area 10' and the non-opening area 11', and the first insulating layer 13' is located between the third insulating layer 15' and the fourth insulating layer 16';

[0090] The second insulating layer 14' is located on a side of the first insulating layer 13' away from the base substrate 12';

[0091] A thin film transistor 24' is located on one side of the base substrate 12'. The thin film transistor 24' includes a gate 241', an active layer 242', a source 243' and a drain 244';

[0092] A touch signal line 18 ′ is located on a side of the second insulating layer 14 ′ away from the base substrate 12 ′. The touch signal line 18 ′ includes a plurality of touch electrodes.

[0093] The sixth insulating layer 19' is located in the opening area 10' and the non-opening area 11', and is located on a side of the second insulating layer 14' away from the base substrate 12' and a side of the touch signal line 18' away from the base substrate 12';

[0094] A common electrode layer 20' is located on a side of the sixth insulating layer 19' away from the second insulating layer 14'. The common electrode layer 20' includes a plurality of common electrodes, at least one of which is reused as a touch electrode.

[0095] a seventh insulating layer 21', located on a side of the sixth insulating layer 19' away from the second insulating layer 14' and a side of the common electrode layer 20' away from the sixth insulating layer 19';

[0096] The pixel electrode layer 26 ′ is located on a side of the thin film transistor 24 ′ away from the base substrate 12 ′. The pixel electrode layer 26 ′ includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode 243 ′ or the drain electrode 244 ′.

[0097] Example 1

[0098] This embodiment provides a display panel such as Fig.16 As shown, the display panel includes an opening area 10 and a non-opening area 11, and the display panel includes:

[0099] Base substrate 12;

[0100] A first insulating layer 13 is located between the base substrate 12 and the fifth insulating layer 17. The first insulating layer 13 has a hollow area 131 and a non-hollow area 132. The hollow area 131 is located on one side of the non-hollow area 132. The hollow area 131 at least partially overlaps with the opening area 10. The material of the first insulating layer 13 is an inorganic material.

[0101] The second insulating layer 14 is located on a side of the first insulating layer 13 away from the base substrate 12;

[0102] The fourth insulating layer 16 is located in the hollow area 131 and the non-hollow area 132, and between the base substrate 12 and the second insulating layer 14. The sixth insulating layer 19 is an interlayer insulating layer.

[0103] A fifth insulating layer 17 is located in the hollow area 131 and the non-hollow area 132 and between the base substrate 12 and the fourth insulating layer 16. The fifth insulating layer 17 is a gate insulating layer.

[0104] The thin film transistor 24 is located on one side of the base substrate 12 . The thin film transistor 24 includes a gate 241 , an active layer 242 , a source 243 , and a drain 244 .

[0105] A touch signal line 18 is located on a side of the second insulating layer 14 away from the base substrate 12 , and the touch signal line 18 includes a plurality of touch electrodes;

[0106] The sixth insulating layer 19 is located in the hollow area 131 and the non-hollow area 132 , and is located on a side of the second insulating layer 14 away from the base substrate 12 and a side of the touch signal line 18 away from the base substrate 12 ;

[0107] A common electrode layer 20 is located on a side of the sixth insulating layer 19 away from the second insulating layer 14 . The common electrode layer 20 includes a plurality of common electrodes, at least one of which is reused as a touch electrode.

[0108] a seventh insulating layer 21, located on a side of the sixth insulating layer 19 away from the second insulating layer 14 and a side of the common electrode layer 20 away from the sixth insulating layer 19;

[0109] The pixel electrode layer 26 is located on a side of the thin film transistor 24 away from the base substrate 12 . The pixel electrode layer 26 includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode 243 or the drain electrode 244 .

[0110] Example 2

[0111] This embodiment provides a display panel such as Fig.17 As shown, the display panel includes an opening area 10 and a non-opening area 11, and the display panel includes:

[0112] Base substrate 12;

[0113] A first insulating layer 13 is located on one side of the base substrate 12. The first insulating layer 13 has a hollow area 131 and a non-hollow area 132. The hollow area 131 is located on one side of the non-hollow area 132. The hollow area 131 at least partially overlaps with the opening area 10. The material of the first insulating layer 13 is silicon oxide. The first insulating layer 13 is a gate insulating layer. The first insulating layer 13 is located between the third insulating layer 15 and the fourth insulating layer 16.

[0114] The second insulating layer 14 is located on a side of the first insulating layer 13 away from the base substrate 12;

[0115] The third insulating layer 15 is located in the hollow area 131 and the non-hollow area 132, and is located between the base substrate 12 and the second insulating layer 14, and between the base substrate 12 and the first insulating layer 13;

[0116] The fourth insulating layer 16 is located in the hollow area 131 and the non-hollow area 132 and between the base substrate 12 and the second insulating layer 14. The fourth insulating layer 16 is an interlayer insulating layer.

[0117] The thin film transistor 24 is located on one side of the base substrate 12 . The thin film transistor 24 includes a gate 241 , an active layer 242 , a source 243 , and a drain 244 .

[0118] A touch signal line 18 is located on a side of the second insulating layer 14 away from the base substrate 12 , and the touch signal line 18 includes a plurality of touch electrodes;

[0119] The sixth insulating layer 19 is located in the hollow area 131 and the non-hollow area 132 , and is located on a side of the second insulating layer 14 away from the base substrate 12 and a side of the touch signal line 18 away from the base substrate 12 ;

[0120] A common electrode layer 20 is located on a side of the sixth insulating layer 19 away from the second insulating layer 14 . The common electrode layer 20 includes a plurality of common electrodes, at least one of which is reused as a touch electrode.

[0121] a seventh insulating layer 21, located on a side of the sixth insulating layer 19 away from the second insulating layer 14 and a side of the common electrode layer 20 away from the sixth insulating layer 19;

[0122] The pixel electrode layer 26 is located on a side of the thin film transistor 24 away from the base substrate 12 . The pixel electrode layer 26 includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode 243 or the drain electrode 244 .

[0123] Example 3

[0124] This embodiment provides a display panel such as Fig.18 As shown, the display panel includes an opening area 10 and a non-opening area 11, and the display panel includes:

[0125] Base substrate 12;

[0126] A first insulating layer 13 is located on one side of the base substrate 12. The first insulating layer 13 has a hollow area 131 and a non-hollow area 132. The hollow area 131 is located on one side of the non-hollow area 132. The hollow area 131 at least partially overlaps with the opening area 10. The material of the first insulating layer 13 is silicon nitride. The first insulating layer 13 is an interlayer insulating layer. The first insulating layer 13 is located between the fourth insulating layer 16 and the second insulating layer 14.

[0127] The second insulating layer 14 is located on a side of the first insulating layer 13 away from the base substrate 12;

[0128] The third insulating layer 15 is located in the hollow area 131 and the non-hollow area 132, and is located between the base substrate 12 and the second insulating layer 14, and between the base substrate 12 and the first insulating layer 13;

[0129] The fourth insulating layer 16 is located in the hollow area 131 and the non-hollow area 132 and between the base substrate 12 and the second insulating layer 14. The fourth insulating layer 16 is a gate insulating layer.

[0130] The thin film transistor 24 is located on one side of the base substrate 12 . The thin film transistor 24 includes a gate 241 , an active layer 242 , a source 243 , and a drain 244 .

[0131] A touch signal line 18 is located on a side of the second insulating layer 14 away from the base substrate 12 , and the touch signal line 18 includes a plurality of touch electrodes;

[0132] The sixth insulating layer 19 is located in the hollow area 131 and the non-hollow area 132 , and is located on a side of the second insulating layer 14 away from the base substrate 12 and a side of the touch signal line 18 away from the base substrate 12 ;

[0133] A common electrode layer 20 is located on a side of the sixth insulating layer 19 away from the second insulating layer 14 . The common electrode layer 20 includes a plurality of common electrodes, at least one of which is reused as a touch electrode.

[0134] a seventh insulating layer 21, located on a side of the sixth insulating layer 19 away from the second insulating layer 14 and a side of the common electrode layer 20 away from the sixth insulating layer 19;

[0135] The pixel electrode layer 26 is located on a side of the thin film transistor 24 away from the base substrate 12 . The pixel electrode layer 26 includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode 243 or the drain electrode 244 .

[0136] Example 4

[0137] This embodiment provides a display panel such as Fig.18 As shown, the difference between the display panel of this embodiment and that of the embodiment 3 is that the material of the first insulating layer 13 is silicon oxide.

[0138] Example 5

[0139] This embodiment provides a display panel such as Fig.19 As shown, the display panel includes an opening area 10 and a non-opening area 11, and the display panel includes:

[0140] Base substrate 12;

[0141] The thin film transistor 24 is located on one side of the base substrate 12 . The thin film transistor 24 includes a gate 241 , an active layer 242 , a source 243 , and a drain 244 . The eighth insulating layer 22 is located between the ninth insulating layer 23 and the tenth insulating layer 25 .

[0142] A first insulating layer 13 is located on one side of the base substrate 12. The first insulating layer 13 has a hollow area 131 and a non-hollow area 132. The hollow area 131 is located on one side of the non-hollow area 132. The hollow area 131 at least partially overlaps with the opening area 10. The material of the first insulating layer 13 is silicon nitride. The first insulating layer 13 is located between the second insulating layer 14 and the third insulating layer 15. The first insulating layer 13 is used as an insulating layer for the pixel electrode layer 26.

[0143] The second insulating layer 14 is located on a side of the first insulating layer 13 away from the base substrate 12;

[0144] The third insulating layer 15 is located in the hollow area 131 and the non-hollow area 132, and is located between the base substrate 12 and the second insulating layer 14, and between the base substrate 12 and the first insulating layer 13;

[0145] A touch signal line 18 is located on a side of the second insulating layer 14 away from the base substrate 12 , and the touch signal line 18 includes a plurality of touch electrodes;

[0146] A common electrode layer 20 is located on a side of the second insulating layer 14 away from the first insulating layer 13 . The common electrode layer 20 includes a plurality of common electrodes, at least one of which is reused as a touch electrode.

[0147] a seventh insulating layer 21, located on a side of the second insulating layer 14 away from the first insulating layer 13 and a side of the common electrode layer 20 away from the second insulating layer 14;

[0148] The pixel electrode layer 26 is located on a side of the thin film transistor 24 away from the base substrate 12 . The pixel electrode layer 26 includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode 243 or the drain electrode 244 .

[0149] Example 6

[0150] This embodiment provides a display panel such as Fig. 20 As shown, the display panel includes an opening area 10 and a non-opening area 11, and the display panel includes:

[0151] Base substrate 12;

[0152] The thin film transistor 24 is located on one side of the base substrate 12 . The thin film transistor 24 includes a gate 241 , an active layer 242 , a source 243 , and a drain 244 . The eighth insulating layer 22 is located between the ninth insulating layer 23 and the tenth insulating layer 25 .

[0153] A first insulating layer 13 is located on one side of the base substrate 12. The first insulating layer 13 has a hollow area 131 and a non-hollow area 132. The hollow area 131 is located on one side of the non-hollow area 132. The hollow area 131 at least partially overlaps with the opening area 10. The material of the first insulating layer 13 is silicon nitride. The first insulating layer 13 is located between the second insulating layer 14 and the sixth insulating layer 19.

[0154] The second insulating layer 14 is located on a side of the first insulating layer 13 away from the base substrate 12;

[0155] The third insulating layer 15 is located in the hollow area 131 and the non-hollow area 132, and is located between the base substrate 12 and the second insulating layer 14, and between the base substrate 12 and the first insulating layer 13;

[0156] A touch signal line 18 is located on a side of the second insulating layer 14 away from the base substrate 12 , and the touch signal line 18 includes a plurality of touch electrodes;

[0157] The sixth insulating layer 19 is located in the hollow area 131 and the non-hollow area 132 , and is located on a side of the third insulating layer 15 away from the base substrate 12 and a side of the touch signal line 18 away from the base substrate 12 ;

[0158] A common electrode layer 20 is located on a side of the sixth insulating layer 19 away from the second insulating layer 14 . The common electrode layer 20 includes a plurality of common electrodes, at least one of which is reused as a touch electrode.

[0159] The pixel electrode layer 26 is located on a side of the thin film transistor 24 away from the base substrate 12 . The pixel electrode layer 26 includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode 243 or the drain electrode 244 .

[0160] Example 7

[0161] This embodiment provides a display panel such as Fig.21 As shown, the display panel includes an opening area 10 and a non-opening area 11, and the display panel includes:

[0162] Base substrate 12;

[0163] The thin film transistor 24 is located on one side of the base substrate 12 . The thin film transistor 24 includes a gate 241 , an active layer 242 , a source 243 , and a drain 244 . The eighth insulating layer 22 is located between the ninth insulating layer 23 and the tenth insulating layer 25 .

[0164] A first insulating layer 13 is located on one side of the base substrate 12. The first insulating layer 13 has a hollow area 131 and a non-hollow area 132. The hollow area 131 is located on one side of the non-hollow area 132. The hollow area 131 at least partially overlaps with the opening area 10. The material of the first insulating layer 13 is silicon nitride. The first insulating layer 13 is an interlayer insulating layer. The first insulating layer 13 is located between the first sub-insulating layer 141 and the fifth insulating layer 17.

[0165] The second insulating layer 14 includes a first sub-insulating layer 141 and a second sub-insulating layer 142, wherein the first sub-insulating layer 141 is located on a side of the thin film transistor 24 away from the base substrate 12 and a portion of the surface of one side of the base substrate 12, and the second sub-insulating layer 142 is located on a surface of the fifth insulating layer 17 away from the first insulating layer 13 and a portion of the surface of the first sub-insulating layer 141 away from the base substrate 12;

[0166] A touch signal line 18 is located on a side of the second insulating layer 14 away from the base substrate 12 , and the touch signal line 18 includes a plurality of touch electrodes;

[0167] The common electrode layer 20 is located on a side of the first insulating layer 13 away from the first sub-insulating layer 141 . The common electrode layer 20 includes a plurality of common electrodes, at least one of which is reused as a touch electrode.

[0168] The pixel electrode layer 26 is located on a side of the thin film transistor 24 away from the base substrate 12 . The pixel electrode layer 26 includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode 243 or the drain electrode 244 .

[0169] Example 8

[0170] This embodiment provides a display panel such as Fig. 22 As shown, the display panel includes an opening area 10 and a non-opening area 11, and the display panel includes:

[0171] Base substrate 12;

[0172] The thin film transistor 24 is located on one side of the base substrate 12 . The thin film transistor 24 includes a gate 241 , an active layer 242 , a source 243 , and a drain 244 . The eighth insulating layer 22 is located between the ninth insulating layer 23 and the tenth insulating layer 25 .

[0173] A first insulating layer 13 is located on one side of the base substrate 12. The first insulating layer 13 has a hollow area 131 and a non-hollow area 132. The hollow area 131 is located on one side of the non-hollow area 132. The hollow area 131 at least partially overlaps with the opening area 10. The material of the first insulating layer 13 is silicon nitride. The first insulating layer 13 is an interlayer insulating layer. The first insulating layer 13 is located between the first sub-insulating layer 141 and the second sub-insulating layer 142.

[0174] The second insulating layer 14 includes a first sub-insulating layer 141 and a second sub-insulating layer 142, wherein the first sub-insulating layer 141 is located on a side of the thin film transistor 24 away from the base substrate 12 and a portion of the surface of one side of the base substrate 12, and the second sub-insulating layer 142 is located on a surface of the first insulating layer 13 away from the first sub-insulating layer 141 and a portion of the surface of the first sub-insulating layer 141 away from the base substrate 12;

[0175] A touch signal line 18 is located on a side of the second insulating layer 14 away from the base substrate 12 , and the touch signal line 18 includes a plurality of touch electrodes;

[0176] The common electrode layer 20 is located on a side of the first insulating layer 13 away from the first sub-insulating layer 141 . The common electrode layer 20 includes a plurality of common electrodes, at least one of which is reused as a touch electrode.

[0177] a seventh insulating layer 21 , located on a side of the second sub-insulating layer 142 away from the first insulating layer 13 and a side of the common electrode layer 20 away from the second sub-insulating layer 142 ;

[0178] The pixel electrode layer 26 is located on a side of the thin film transistor 24 away from the base substrate 12 . The pixel electrode layer 26 includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode 243 or the drain electrode 244 .

[0179] Example 9

[0180] This embodiment provides a display panel such as Fig.17 As shown, the difference between the display panel of this embodiment and that of Embodiment 2 is that the material of the first insulating layer 13 is silicon nitride.

[0181] The reflectivity and reflective hue of the display panels in the above-mentioned embodiments 1 to 8 and comparative example 1 were tested, wherein the thin film transistors in the above-mentioned display panels were all low-temperature polycrystalline silicon transistors. The test results are shown in Table 1, wherein the reflectivity change value is the reflectivity change difference of the display panel, △a* and △b* are chromaticity coordinates, which are optical parameters used to represent the reflective hue, and the closer the value is to 0, the smaller the reflective hue difference is.

[0182] Table 1

[0183] Reflectivity change value △a* △b* Comparative Example 1 11.8％ 0.35 -4.08 Example 6 -13.3％ 12.38 -20.03 Example 5 -9.4％ -5.33 1.90 Example 4 -3.8％ -0.01 -1.11 Example 3 -15.2％ 0.07 -1.54 Example 2 -4.0％ 0.11 0.04 Example 1 3.7％ -0.18 0.95 Example 7 -28.9％ 24.45 -31.92 Example 8 -25.6％ -6.27 0.46

[0184] The reflectivity and reflective hue of the display panels in the above-mentioned embodiments 2 to 4, embodiments 6 to 9 and comparative example 1 were tested, wherein the thin film transistors in the above-mentioned display panels are all back channel etched (BCE) type thin film transistors, and the test results are shown in Table 2.

[0185] Table 2

[0186] Reflectivity change value △a* △b* Comparative Example 1 9.5％ 0.27 -11.61 Example 6 37.3％ -23.69 4.36 Example 3 -0.5％ -1.71 3.10 Example 4 1.4％ -0.24 -0.09 Example 2 -2.1％ 0.41 -1.08 Example 9 -6.6％ 7.22 1.20 Example 7 30.2％ -18.78 7.42 Example 8 -8.5％ 5.97 3.89

[0187] The reflectivity and reflective hue of the display panels in the above-mentioned embodiments 2 to 9 and comparative example 1 were tested, wherein the thin film transistors in the above-mentioned display panels are all thin film transistors with an etch stop layer (ESL). The test results are shown in Table 3.

[0188] Table 3

[0189] Reflectivity change value △a* △b* Comparative Example 1 9.2％ -13.90 -1.86 Example 6 -6.1％ -2.78 -3.34 Example 5 4.9％ 4.38 -1.79 Example 3 -4.5％ 0.77 -1.16 Example 4 -3.8％ 1.07 -0.98 Example 2 -5.2％ 0.33 -0.62 Example 9 -11.4％ 11.98 -3.68 Example 7 -14.3％ 0.46 0.42 Example 8 -13.7％ 17.59 -3.04

[0190] In another typical embodiment of the present application, Fig.23 As shown, a display device is provided, comprising: any one of the above-mentioned display panels 100. The specific structure of the display panel 100 has been described in detail in the above-mentioned embodiments, and will not be repeated here. Fig.17 The display device shown is only for illustration purposes and may be Fig.17 The vehicle-mounted display device shown may also be any electronic device with a display function, such as a mobile phone, a tablet computer, a laptop computer, an e-reader or a television.

[0191] Since the display device provided by the embodiment of the application includes the above-mentioned display panel, the structure of the portion of the display panel corresponding to the opening area and the portion corresponding to the non-opening area is designed separately, the opening area corresponds to the hollow area of ​​the first insulating layer, and the second insulating layer is arranged in the hollow area. Since the material of the first insulating layer is an inorganic material and the material of the second insulating layer is an organic material, the organic material is used to replace the original inorganic material, which can reduce the number of optical interfaces in the opening area. At the same time, since the non-opening area corresponds to the non-hollowing area of ​​the first insulating layer, the reflectivity is reduced without affecting the original film structure of the non-opening area of ​​the display panel, thereby improving the transmittance of the display panel, solving the technical problem of how to increase the transmittance of the display panel in the prior art.

[0192] In another typical embodiment of the present application, a method for manufacturing a display panel is provided. The display panel includes an opening area 10 and a non-opening area 11. Fig.24 As shown, the above method includes:

[0193] Step S101, providing a substrate 12, obtaining Fig.25 (a) The structure shown;

[0194] Step S102, forming a first preliminary insulating layer 30 on one side of the base substrate 12, wherein the material of the first preliminary insulating layer 30 is an inorganic material, and obtaining Fig.25 (b) The structure shown;

[0195] Step S103, removing part of the first preliminary insulating layer 30, and the remaining first preliminary insulating layer 30 forms a first insulating layer 13 having a hollow area 131 and a non-hollow area 132, wherein the hollow area 131 at least partially overlaps with the opening area 10, and the first insulating layer 13 having a hollow area 131 and a non-hollow area 132 is formed. Fig.25 (c) The structure shown;

[0196] Step S104, forming a second insulating layer in the hollow area 131 and the non-hollow area 132, wherein the material of the second insulating layer 14 is an organic material, and the second insulating layer 14 is formed in the hollow area 131 and the non-hollow area 132. Fig.25 (d) The structure shown.

[0197] In an embodiment of the present application, a method for manufacturing a display panel is provided, wherein the structure of the portion of the display panel corresponding to the opening area and the portion corresponding to the non-opening area are designed separately, the opening area corresponds to the hollow area of ​​the first insulating layer, and a second insulating layer is arranged in the hollow area. Since the material of the first insulating layer is an inorganic material and the material of the second insulating layer is an organic material, the number of optical interfaces in the opening area can be reduced by replacing the original inorganic material with an organic material. At the same time, since the non-opening area corresponds to the non-hollowing area of ​​the first insulating layer, the reflectivity is reduced without affecting the original film structure of the non-opening area of ​​the display panel, thereby improving the transmittance of the display panel, solving the technical problem of how to increase the transmittance of the display panel in the prior art.

[0198] In another specific embodiment, Fig.26 As shown, after the above step S101 and before step S102, the method further includes: step S1011, forming a third insulating layer 15 in the above hollow area 131 and the above non-hollow area 132 on one side of the above base substrate 12, to obtain Figure 4 The above method can further quickly form the third insulating layer.

[0199] Specifically, the material of the third insulating layer is different from the material of the second insulating layer, and the material of the third insulating layer may be silicon nitride.

[0200] In another specific embodiment, Fig. 27 As shown, after the above step S103 and before the step S104, the above method further includes: step S1031, forming a fourth insulating layer 16 in the above hollow area 131 and the above non-hollow area 132 on one side of the above base substrate 12, to obtain Figure 5 The above method can further quickly form the fourth insulating layer.

[0201] Specifically, the material of the fourth insulating layer is different from the material of the second insulating layer, and the material of the fourth insulating layer may be silicon nitride.

[0202] In another specific embodiment, Fig.28 As shown, after the above step S1031, the following further includes: step S1032, forming a fifth insulating layer 17 in the above hollow area 131 and the above non-hollow area 132 between the above fourth insulating layer 16 and the above base substrate 12, so as to obtain Figure 6 The above method can further quickly form the fifth insulating layer.

[0203] Specifically, the material of the fifth insulating layer is different from the material of the second insulating layer, and the material of the fourth insulating layer may be silicon oxide.

[0204] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0205] 1) The display panel of the present application is designed by separately designing the structure of the part of the display panel corresponding to the opening area and the part corresponding to the non-opening area. The opening area corresponds to the hollow area of ​​the first insulating layer, and the second insulating layer is arranged in the hollow area. Since the material of the first insulating layer is an inorganic material and the material of the second insulating layer is an organic material, the organic material is used to replace the original inorganic material, which can reduce the number of optical interfaces in the opening area. At the same time, since the non-opening area corresponds to the non-hollowing area of ​​the first insulating layer, the reflectivity is reduced without affecting the original film structure of the non-opening area of ​​the display panel, thereby improving the transmittance of the display panel, solving the technical problem of how to increase the transmittance of the display panel in the prior art.

[0206] 2) The display device of the present application includes the above-mentioned display panel. The structure of the part of the display panel corresponding to the opening area and the part corresponding to the non-opening area is designed separately. The opening area corresponds to the hollow area of ​​the first insulating layer, and the second insulating layer is arranged in the hollow area. Since the material of the first insulating layer is inorganic material and the material of the second insulating layer is organic material, the organic material is used to replace the original inorganic material, which can reduce the number of optical interfaces in the opening area. At the same time, since the non-opening area corresponds to the non-hollowing area of ​​the first insulating layer, the reflectivity is reduced without affecting the original film structure of the non-opening area of ​​the display panel, thereby improving the transmittance of the display panel, solving the technical problem of how to increase the transmittance of the display panel in the prior art.

[0207] 3) The manufacturing method of the display panel of the present application is to design the structure of the part of the display panel corresponding to the opening area and the part corresponding to the non-opening area respectively. The opening area corresponds to the hollow area of ​​the first insulating layer, and the second insulating layer is arranged in the hollow area. Since the material of the first insulating layer is inorganic material and the material of the second insulating layer is organic material, the organic material is used to replace the original inorganic material, which can reduce the number of optical interfaces in the opening area. At the same time, since the non-opening area corresponds to the non-hollow area of ​​the first insulating layer, the reflectivity is reduced without affecting the original film structure of the non-opening area of ​​the display panel, thereby improving the transmittance of the display panel, solving the technical problem of how to increase the transmittance of the display panel in the prior art.

[0208] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A display panel, characterized in that: The display panel includes an opening area and a non-opening area, and the display panel includes: substrate substrate; A first insulating layer is located on one side of the base substrate, the first insulating layer has a hollow area and a non-hollow area, the hollow area is located on one side of the non-hollow area, the hollow area and the opening area at least partially overlap, and the material of the first insulating layer is an inorganic material; The second insulating layer is located in the hollow area and the non-hollow area. The material of the second insulating layer is an organic material. The thickness of the second insulating layer located in the non-hollow area is less than the thickness of the second insulating layer located in the hollow area.

2. The display panel according to claim 1, characterized in that: The second insulating layer is located on a side of the first insulating layer away from the base substrate.

3. The display panel according to claim 1, characterized in that: The display panel further includes: The third insulating layer is located in the hollow area and the non-hollow area, and is located between the base substrate and the second insulating layer and between the base substrate and the first insulating layer.

4. The display panel according to claim 3, characterized in that: A material of the third insulating layer is different from a material of the second insulating layer.

5. The display panel according to claim 3, characterized in that: The material of the third insulating layer is silicon nitride.

6. The display panel according to claim 1, characterized in that: The display panel further includes: A fourth insulating layer is located in the hollow area and the non-hollow area, and between the base substrate and the second insulating layer.

7. The display panel according to claim 6, characterized in that: A material of the fourth insulating layer is different from a material of the second insulating layer.

8. The display panel according to claim 6, characterized in that: The material of the fourth insulating layer is silicon nitride.

9. The display panel according to claim 6, characterized in that: The display panel further includes: The fifth insulating layer is located in the hollow area and the non-hollow area, and between the base substrate and the fourth insulating layer.

10. The display panel according to claim 9, characterized in that: The fifth insulating layer is made of a material different from that of the second insulating layer.

11. The display panel according to claim 9, characterized in that: The material of the fifth insulating layer is silicon oxide.

12. The display panel according to claim 1, characterized in that: A difference between a thickness of the second insulating layer located in the hollow area and a thickness of the second insulating layer located in the non-hollow area is less than a predetermined value.

13. The display panel according to claim 1, characterized in that: The display panel further includes: The touch signal line is located on a side of the second insulating layer away from the base substrate.

14. The display panel according to claim 13, characterized in that: The display panel further includes: The sixth insulating layer is located in the hollow area and the non-hollow area, and is located on a side of the second insulating layer away from the base substrate and a side of the touch signal line away from the base substrate.

15. The display panel according to claim 14, characterized in that: The display panel further includes: The common electrode layer is located on a side of the sixth insulating layer away from the second insulating layer. The common electrode layer includes a plurality of common electrodes, and at least one of the common electrodes is reused as a touch electrode.

16. The display panel according to claim 15, characterized in that: The display panel further includes: The seventh insulating layer is located on a side of the sixth insulating layer away from the second insulating layer and on a side of the common electrode layer away from the sixth insulating layer.

17. The display panel according to claim 14, characterized in that: The first insulating layer is located on a side of the sixth insulating layer close to the base substrate, and the first insulating layer includes an eighth insulating layer and a ninth insulating layer that are adjacently arranged.

18. The display panel according to claim 17, characterized in that: The display panel also includes a thin film transistor located on one side of the base substrate, the thin film transistor includes a gate, an active layer, a source and a drain, wherein the gate is located on one side of the base substrate, the active layer is located on a side of the gate away from the base substrate, the source and the drain are respectively located on both sides of the active layer, the eighth insulating layer is located between the gate and the active layer, and the ninth insulating layer is located on a side of the drain away from the base substrate and a side of the source away from the base substrate.

19. The display panel according to claim 17, characterized in that: The display panel also includes a thin film transistor located on one side of the base substrate, and the thin film transistor includes a gate, an active layer, a source and a drain, wherein the gate is located on one side of the base substrate, the active layer is located between the gate and the base substrate, the source and the drain are respectively located on both sides of the active layer, the eighth insulating layer is located between the gate and the active layer, and the ninth insulating layer is located on a side of the active layer close to the base substrate.

20. The display panel according to claim 18 or 19, characterized in that: The first insulating layer further includes a tenth insulating layer, and the tenth insulating layer is located at a side of the gate away from the substrate.

21. The display panel according to claim 18 or 19, characterized in that: The source electrode includes at least a first connection portion, and the drain electrode includes at least a second connection portion, one end of the first connection portion and one end of the second connection portion are respectively connected to the active layer, the first insulating layer includes a first through hole and a second through hole, the first connection portion is at least located in the first through hole, and the second connection portion is at least located in the second through hole.

22. The display panel according to claim 18 or 19, characterized in that: The display panel further includes: The pixel electrode layer is located on a side of the thin film transistor away from the base substrate. The pixel electrode layer includes a plurality of pixel electrodes arranged at intervals. The pixel electrodes are electrically connected to the source electrode or the drain electrode.

23. A display device, characterized in that: include: A display panel as claimed in any one of claims 1 to 22.

24. A method for manufacturing a display panel, characterized in that: The display panel includes an opening area and a non-opening area, and the method includes: providing a substrate base plate; forming a first preliminary insulating layer on one side of the base substrate, wherein the material of the first preliminary insulating layer is an inorganic material; Removing a portion of the first preliminary insulating layer, so that the remaining first preliminary insulating layer forms a first insulating layer having a hollow area and a non-hollow area, wherein the hollow area at least partially overlaps with the opening area; A second insulating layer is formed in the hollow area and the non-hollow area, and the material of the second insulating layer is an organic material.

25. The method according to claim 24, characterized in that After providing the base substrate and before forming a first preliminary insulating layer on one side of the base substrate, the method further includes: A third insulating layer is formed in the hollow area and the non-hollow area on one side of the base substrate.

26. The method according to claim 25, characterized in that After removing part of the first preliminary insulating layer to form a first insulating layer having a hollow area and a non-hollow area with the remaining first preliminary insulating layer, and before forming a second insulating layer in the hollow area and the non-hollow area, the method further includes: A fourth insulating layer is formed in the hollow area and the non-hollow area on one side of the base substrate.

27. The method according to claim 26, characterized in that After forming a fourth insulating layer in the hollow area and the non-hollow area on one side of the base substrate, the method includes: A fifth insulating layer is formed in the hollow area and the non-hollow area between the fourth insulating layer and the base substrate.

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