Electronic device

Abstract

The invention provides an electronic device. The electronic device comprises a substrate, a circuit layer, a first light-emitting unit, a second light-emitting unit and a light conversion layer. The circuit layer is disposed on the substrate. The first light-emitting unit and the second light-emitting unit are arranged on the circuit layer. The first light-emitting unit and the second light-emitting unit are electrically connected to the circuit layer respectively. The light conversion layer is disposed on the first light emitting unit and the second light emitting unit. The light conversion layer includes a first light conversion unit overlapping the first light emitting unit and a second light conversion unit overlapping the second light emitting unit. The first light conversion unit and the second light conversion unit correspond to the first color. In a top view, the area of the first light-emitting unit is smaller than that of the second light-emitting unit, and the area of the first light conversion unit is the same as that of the second light conversion unit. The electronic device can improve the display quality or save the manufacturing cost.

Description

Technical Field

[0001] The present disclosure relates to an electronic device, and more particularly to an electronic device capable of improving display quality or saving manufacturing costs. Background Art

[0002] Electronic devices or spliced ​​electronic devices have been widely used in different fields such as communication, display, automobile or aviation. With the rapid development of electronic devices, electronic devices are developing towards being lighter and thinner, so the reliability or quality requirements of electronic devices are higher. Summary of the invention

[0003] The present disclosure provides an electronic device which can improve display quality or save manufacturing cost.

[0004] According to an embodiment of the present disclosure, an electronic device includes a substrate, a circuit layer, a first light-emitting unit, a second light-emitting unit, and a light conversion layer. The circuit layer is disposed on the substrate. The first light-emitting unit and the second light-emitting unit are disposed on the circuit layer. The first light-emitting unit and the second light-emitting unit are electrically connected to the circuit layer, respectively. The light conversion layer is disposed on the first light-emitting unit and the second light-emitting unit. The light conversion layer includes a first light conversion unit overlapping the first light-emitting unit and a second light conversion unit overlapping the second light-emitting unit. The first light conversion unit and the second light conversion unit correspond to a first color. In a top view, an area of ​​the first light-emitting unit is smaller than an area of ​​the second light-emitting unit, and an area of ​​the first light conversion unit is the same as an area of ​​the second light conversion unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure.

[0006] Figure 1 A schematic top view of an electronic device according to a first embodiment of the present disclosure;

[0007] FIG. 2A to FIG. 2F for Figure 1 A cross-sectional schematic diagram of a method for manufacturing an electronic device;

[0008] Figure 3 for Figure 2A An enlarged schematic diagram of region R;

[0009] Figure 4 for Figure 2C to Figure 2D A schematic top view of a method for manufacturing an electronic device;

[0010] Figure 5 A cross-sectional schematic diagram of an electronic device according to a second embodiment of the present disclosure;

[0011] Figure 6A schematic top view of an electronic device according to a third embodiment of the present disclosure;

[0012] Figure 7 for Figure 6 A schematic cross-sectional view of an electronic device along a section line II';

[0013] Figure 8 is a schematic top view of an electronic device according to a fourth embodiment of the present disclosure;

[0014] Fig. 9 for Figure 8 A schematic cross-sectional view of an electronic device along section line II-II';

[0015] Fig.10 A cross-sectional schematic diagram of an electronic device according to a fifth embodiment of the present disclosure;

[0016] Fig.11 It is a top view schematic diagram of an electronic device according to a sixth embodiment of the present disclosure.

[0017] Description of Figure Numbers

[0018] 100, 100a, 100b, 100c, 100d, 100e: electronic devices;

[0019] 110. S1: substrate;

[0020] 111: Central District;

[0021] 112: Outer area;

[0022] 120, 120b: circuit layer;

[0023] 1211, 1211c: first electrode;

[0024] 1212, 1212c: second electrode;

[0025] 1213, 1213c: a third electrode;

[0026] 1214, 1214c: fourth electrode;

[0027] 1215, 1215c: fifth electrode;

[0028] 1216: sixth electrode;

[0029] 1221, 1222, BL1: buffer layer;

[0030] 123: gate insulating layer;

[0031] 1241, 1242, IL1, IL2, IL3: insulation layer;

[0032] 125: transistor;

[0033] 126, E1, E1a, E2: electrodes;

[0034] 1271, 1272: flat layer;

[0035] 128: circuit layer;

[0036] 129: Circuit stacking;

[0037] 130, 130b, 130e: light emitting unit layer;

[0038] 131, 131c: first light emitting unit;

[0039] 132, 132c: second light emitting unit;

[0040] 133, 133c: third light emitting unit;

[0041] 134, 134c: fourth light emitting unit;

[0042] 135, 135c: fifth light emitting unit;

[0043] 136, 136c: sixth light emitting unit;

[0044] 137, 157, 167: black matrix layer;

[0045] 1371, 141: opening;

[0046] 138: seventh light emitting unit;

[0047] 139: reflective layer;

[0048] 140: light guide layer;

[0049] 140a: light guide material layer;

[0050] 150: light conversion layer;

[0051] 151: a first light conversion unit;

[0052] 152: a second light conversion unit;

[0053] 153: a third light conversion unit;

[0054] 154: fourth light conversion unit;

[0055] 155: fifth light conversion unit;

[0056] 156: sixth light conversion unit;

[0057] 160: color filter layer;

[0058] 161: first filter unit;

[0059] 162: second filter unit;

[0060] 163: the third filter unit;

[0061] 164: fourth filter unit;

[0062] 165: fifth filter unit;

[0063] 166: sixth filter unit;

[0064] 170: Cover plate;

[0065] 180: light sensing element;

[0066] AD1, AD2: adhesive layer;

[0067] BL2: buffer material layer;

[0068] BL21, SL11, SL21: first floor;

[0069] BL22, SL12, SL22: second layer;

[0070] BL23, SL23: third floor;

[0071] C1: conductive parts;

[0072] FL: luminescent material layer;

[0073] G: gap;

[0074] GE: gate;

[0075] M: patterned stacked structure;

[0076] R: region;

[0077] SD1: source;

[0078] SD2: drain;

[0079] SE: Semiconductor;

[0080] SL1: first semiconductor layer;

[0081] SL2: second semiconductor layer;

[0082] U1: stacked unit;

[0083] U2: splicing unit;

[0084] U3: remaining part;

[0085] W1, W2, W3, W4, W5, W6, W7, W8, W9, W10, W11, W12, W13: width;

[0086] X, Y, Z: direction. DETAILED DESCRIPTION

[0087] The present disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to make it easier for readers to understand and for the simplicity of the drawings, the multiple drawings in the present disclosure only depict a portion of the electronic device, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the figure are only for illustration and are not intended to limit the scope of the present disclosure.

[0088] In the following description and claims, the words “including” and “comprising” are open-ended words, and thus should be interpreted as meaning “including but not limited to…”.

[0089] It should be understood that when an element or a film layer is referred to as being "on" or "connected to" another element or film layer, it may be directly on or directly connected to the other element or layer, or there may be an intervening element or film layer between the two (indirect case). Conversely, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two.

[0090] Although the terms "first", "second", "third" ... can be used to describe a variety of components, the components are not limited to these terms. These terms are only used to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but may be replaced by first, second, third ... according to the order of the components declared in the claims. Therefore, in the following description, the first component may be the second component in the claims.

[0091] In the text, the terms "about", "approximately", "substantially", and "roughly" generally indicate a range within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5% of a given value. The numbers given here are approximate numbers, that is, in the absence of specific descriptions of "about", "approximately", "substantially", and "roughly", the meanings of "about", "approximately", "substantially", and "roughly" can still be implied.

[0092] In some embodiments of the present disclosure, terms such as "connection" and "interconnection" may refer to two structures being in direct contact, or two structures not being in direct contact, with other structures disposed between the two structures, unless otherwise specified. Such terms may also include situations where both structures are movable or both structures are fixed. In addition, the term "coupling" includes any direct and indirect electrical connection means.

[0093] In some embodiments of the present disclosure, an optical microscope (OM), a scanning electron microscope (SEM), an α-step, an ellipsometer, or other suitable methods may be used to measure the area, width, thickness, or height of each element, or the distance or spacing between elements. Specifically, according to some embodiments, a scanning electron microscope may be used to obtain a cross-sectional structural image including the element to be measured, and the area, width, thickness, or height of each element, or the distance or spacing between elements may be measured.

[0094] The electronic device disclosed herein may include a display device, an antenna device, a sensing device or a splicing device, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The electronic device may, for example, include a liquid crystal light emitting diode; the light emitting diode may, for example, include an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED or a quantum dot light emitting diode (QD, which may be, for example, QLED, QDLED), fluorescence, phosphorescence or other suitable materials and the materials may be arranged and combined in any manner, but is not limited thereto. The antenna device may, for example, be a liquid crystal antenna, but is not limited thereto. The splicing device may, for example, be a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device may be any arrangement or combination of the aforementioned, but is not limited thereto. The following will illustrate the contents of the present disclosure using an electronic device, but the present disclosure is not limited thereto.

[0095] It should be noted that the following embodiments may replace, reorganize, or mix features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. Features between embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

[0096] Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0097] Figure 1 It is a schematic top view of an electronic device according to a first embodiment of the present disclosure. FIG. 2A to FIG. 2F for Figure 1 A cross-sectional schematic diagram of a method for manufacturing an electronic device. Figure 2F for Figure 1 A schematic cross-sectional view of an electronic device along section line AA'. Figure 3 for Figure 2A An enlarged schematic diagram of region R. Figure 4 for Figure 2C to Figure 2D A schematic top view of a method for manufacturing an electronic device is shown in FIG. Figure 1 and Figure 4 Some elements in the electronic device 100 are omitted from illustration.

[0098] Please refer to Figure 1 and Figure 2F The electronic device 100 of the present embodiment includes a substrate 110 , a circuit layer 120 , a light emitting unit layer 130 , a light guide layer 140 , a light conversion layer 150 , a color filter layer 160 and a cover plate 170 .

[0099] Specifically, the substrate 110 has a central region 111 and a peripheral region 112, and the peripheral region 112 surrounds the central region 111. In the present embodiment, the substrate 110 may include a hard substrate, a soft substrate, or a combination thereof. For example, the material of the substrate 110 may include glass, quartz, sapphire, ceramic, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), other suitable substrate materials, or a combination thereof, but is not limited thereto.

[0100] The circuit layer 120 is disposed on the substrate 110. The circuit layer 120 includes at least a first electrode 1211, a second electrode 1212, a third electrode 1213, a fourth electrode 1214, a fifth electrode 1215, and a circuit stack 129 connected to these electrodes. In the direction Z, the first electrode 1211 and the third electrode 1213 are disposed corresponding to the central area 111 of the substrate 110, and the second electrode 1212 and the fourth electrode 1214 are disposed corresponding to the peripheral area 112 of the substrate 110. In addition, the first electrode 1211 may correspond to the first light emitting unit 131, the second electrode 1212 may correspond to the second light emitting unit 132, the third electrode 1213 may correspond to the third light emitting unit 133, and the fourth electrode 1214 may correspond to the fourth light emitting unit 134.

[0101] In the present embodiment, direction X, direction Y, and direction Z are different directions. For example, direction X is, for example, the extension direction of the cross-sectional line AA', and direction Z is, for example, the normal direction of the substrate 110 or the normal direction of the electronic device 100. Direction X is substantially perpendicular to direction Z, and direction X and direction Z are substantially perpendicular to direction Y, but are not limited thereto.

[0102] The light emitting unit layer 130 includes a first light emitting unit 131, a second light emitting unit 132, a third light emitting unit 133, a fourth light emitting unit 134, a fifth light emitting unit 135, a sixth light emitting unit 136 and a black matrix layer 137. The first light emitting unit 131, the second light emitting unit 132, the third light emitting unit 133, the fourth light emitting unit 134, the fifth light emitting unit 135 and the sixth light emitting unit 136 are respectively disposed on the circuit layer 120. The first light emitting unit 131, the second light emitting unit 132, the third light emitting unit 133, the fourth light emitting unit 134, the fifth light emitting unit 135 and the sixth light emitting unit 136 can emit light of the same color. The black matrix layer 137 is disposed between two adjacent light emitting units.

[0103] In the cross-sectional diagram (such as Figure 2F), the light emitting units (i.e., the first light emitting unit 131, the second light emitting unit 132, the third light emitting unit 133, and the fourth light emitting unit 134) may include a stacking unit U1, a second semiconductor layer SL2, a buffer layer BL1, an electrode E1, and an electrode E2. The stacking unit U1 includes a first semiconductor layer SL1 and a light emitting material layer FL. The first semiconductor layer SL1 is located between the light emitting material layer FL and the circuit layer 120. The light emitting material layer FL is located between the second semiconductor layer SL2 and the first semiconductor layer SL1, and the light emitting material layer FL can be electrically connected to the circuit layer 120 through the first semiconductor layer SL1. The buffer layer BL1 is disposed under the stacking unit U1. The buffer layer BL1 has a rough surface to reduce the total reflection phenomenon of light inside the stacking unit U1 and improve the light emitting effect. The electrode E1 is disposed between the stacking unit U1 and the circuit layer 120, and the electrode E1 can electrically connect the first semiconductor layer SL1 and the circuit layer 120. The electrode E2 is disposed between the second semiconductor layer SL2 and the circuit layer 120, and the electrode E2 can electrically connect the second semiconductor layer SL2 and the circuit layer 120. The light-emitting units (i.e., the first light-emitting unit 131, the second light-emitting unit 132, the third light-emitting unit 133, the fourth light-emitting unit 134, the fifth light-emitting unit 135, and the sixth light-emitting unit 136) can be electrically connected to the corresponding electrodes (i.e., the first electrode 1211, the second electrode 1212, the third electrode 1213, the fourth electrode 1214, and the fifth electrode 1215) in the circuit layer 120 through the electrodes (i.e., the electrode E1 and the electrode E2) and the conductive member C1. In addition, in the present embodiment, the first semiconductor layer SL1 can be a P-type semiconductor, and the second semiconductor layer SL2 can be an N-type semiconductor. At this time, the first electrode 1211, the second electrode 1212, the third electrode 1213, and the fourth electrode 1214 are anodes, and the fifth electrode 1215 is a cathode. In some other embodiments, the first semiconductor layer may be an N-type semiconductor, and the second semiconductor layer may be a P-type semiconductor. In this case, the first electrode 1211, the second electrode 1212, the third electrode 1213, and the fourth electrode 1214 are cathodes, and the fifth electrode 1215 is an anode.

[0104] In this embodiment, in the direction Z, the first light emitting unit 131, the third light emitting unit 133 and the fifth light emitting unit 135 may overlap and correspond to the central area 111 of the substrate 110, and the second light emitting unit 132, the fourth light emitting unit 134 and the sixth light emitting unit 136 may overlap and correspond to the peripheral area 112 of the substrate 110. Figure 2F), the width W1 of the stacking unit U1 of the first light emitting unit 131 may be smaller than the width W2 of the stacking unit U1 of the second light emitting unit 132, and the width W3 of the stacking unit U1 of the third light emitting unit 133 may be smaller than the width W4 of the stacking unit U1 of the fourth light emitting unit 134. The width W1, the width W2, the width W3, and the width W4 are the maximum widths of the stacking units U1 in the first light emitting unit 131, the second light emitting unit 132, the third light emitting unit 133, and the fourth light emitting unit 134 measured along the direction X, respectively.

[0105] In the top view (such as Figure 1 ), the area of ​​the third light emitting unit 133 is different from the area of ​​the first light emitting unit 131, and the area of ​​the fifth light emitting unit 135 is different from the area of ​​the first light emitting unit 131 and the area of ​​the third light emitting unit 133. For example, in the top view (as shown in Figure 1 ), the area of ​​the first light-emitting unit 131 may be smaller than the area of ​​the second light-emitting unit 132, the area of ​​the third light-emitting unit 133 may be smaller than the area of ​​the fourth light-emitting unit 134, and the area of ​​the fifth light-emitting unit 135 may be smaller than the area of ​​the sixth light-emitting unit 136. More specifically, in the present disclosure, the sum of the areas of the stacking units U1 of a light-emitting unit in the top view may represent the area of ​​the light-emitting unit, and in the embodiment, since the number of stacking units U1 in each light-emitting unit is 1, a larger area of ​​the stacking unit U1 indicates that the corresponding light-emitting unit has a larger area, and a smaller area of ​​the stacking unit U1 indicates that the corresponding light-emitting unit has a smaller area. For example, since the area of ​​the stacking unit U1 in the first light-emitting unit 131 may also be smaller than the area of ​​the stacking unit U1 in the second light-emitting unit 132, it means that the area of ​​the first light-emitting unit 131 may be smaller than the area of ​​the second light-emitting unit 132.

[0106] Generally, in the process of manufacturing the light-emitting units, the epitaxial effect and the light-emitting efficiency of the light-emitting units in the central area are higher than those of the light-emitting units in the peripheral area due to the different positions of forming the epitaxial structure. Therefore, in the electronic device 100 of the present embodiment, by making the area of ​​the light-emitting units in the central area 111 (i.e., the first light-emitting unit 131, the third light-emitting unit 133 and the fifth light-emitting unit 135) smaller than the area of ​​the corresponding light-emitting units in the peripheral area 112 (i.e., the second light-emitting unit 132, the fourth light-emitting unit 134 and the sixth light-emitting unit 136), the light emission of the light-emitting units in the central area 111 can be substantially the same as the light emission of the light-emitting units in the peripheral area 112, thereby improving the display quality.

[0107] like Figure 2FAs shown, the light guide layer 140 is disposed between the light conversion layer 150 and the first light emitting unit 131 (or the light emitting unit layer 130) to improve brightness. The light guide layer 140 may overlap in the direction Z and is disposed corresponding to the black matrix layer 137 in the light emitting unit layer 130. That is, the light guide layer 140 includes openings 141 and spacers 142 located between the openings 141. The openings 141 may overlap in the direction Z and correspond to the stacking unit U1 of the light emitting units (i.e., the first light emitting unit 131, the second light emitting unit 132, the third light emitting unit 133, and the fourth light emitting unit 134), and the spacers 142 between the openings 141 may overlap with the black matrix layer 137. The width W5 of the bottom of the opening 141 adjacent to the stacking unit U1 may be substantially the same as the width of the stacking unit U1, and the width W6 of the opening 141 away from the top of the stacking unit U1 may be substantially the same as the width W7 of the surface of the light conversion unit in the light conversion layer 150 adjacent to the light guide layer 140. The width W5, the width W6, and the width W7 are respectively the maximum widths of the bottom of the opening 141, the top of the opening 141, and the surface of the light conversion unit adjacent to the light guide layer 140 measured along the direction X. The shape of the spacer layer 142 can adjust the light emission direction of the light emitting unit to improve the light emission brightness of the electronic device 100.

[0108] Please also refer to Figure 1 and Figure 2F , the light conversion layer 150 is disposed on the light emitting unit layer 130 and the light guide layer 140. The light conversion layer 150 is disposed on the first light emitting unit 131 and the second light emitting unit 132. The light conversion layer 150 includes a first light conversion unit 151 overlapping and corresponding to the first light emitting unit 131, a second light conversion unit 152 overlapping and corresponding to the second light emitting unit 132, a third light conversion unit 153 overlapping and corresponding to the third light emitting unit 133, a fourth light conversion unit 154 overlapping and corresponding to the fourth light emitting unit 134, a fifth light conversion unit 155 overlapping and corresponding to the fifth light emitting unit 135, a sixth light conversion unit 156 overlapping and corresponding to the sixth light emitting unit 136, and a black matrix layer 157 overlapping and corresponding to the spacer 142 of the light guide layer 140. The first light conversion unit 151 and the second light conversion unit 152 correspond to a first color (for example, green, but not limited thereto), the third light conversion unit 153 and the fourth light conversion unit 154 correspond to a second color (for example, red, but not limited thereto), and the fifth light conversion unit 155 and the sixth light conversion unit 156 correspond to a third color (for example, blue, but not limited thereto). Figure 2F), the width W8 of the surface of the first light conversion unit 151 away from the light guide layer 140 is substantially equal to the width W8 of the surface of the second light conversion unit 152 away from the light guide layer 140, and the width W9 of the surface of the third light conversion unit 153 away from the light guide layer 140 is substantially equal to the width W9 of the surface of the fourth light conversion unit 154 away from the light guide layer 140. The width W8 and the width W9 are respectively the maximum widths of the surface of the first light conversion unit 151 (or the second light conversion unit 152) away from the light guide layer 140 and the surface of the third light conversion unit 153 (or the fourth light conversion unit 154) away from the light guide layer 140 measured along the direction X. It should be noted that the description of "two optical layers corresponding to the same color" in the present disclosure does not mean that the light emitted from the two optical layers has exactly the same spectrum distribution, but means that when a user observes the light emitted by the two optical layers, the color difference of the two light rays is not large and they are basically the same color.

[0109] In the top view (such as Figure 1 ), the area of ​​the first light conversion unit 151 is the same as the area of ​​the second light conversion unit 152, the area of ​​the third light conversion unit 153 is the same as the area of ​​the fourth light conversion unit 154, and the area of ​​the fifth light conversion unit 155 is the same as the area of ​​the sixth light conversion unit 156. In the top view (as shown in Figure 1 ), the area of ​​the third light conversion unit 153 may be different from the area of ​​the first light conversion unit 151, and the area of ​​the fifth light conversion unit 155 may be different from the area of ​​the first light conversion unit 151 and the area of ​​the third light conversion unit 153. In this embodiment, in the top view (as shown in FIG. Figure 1 ), the area of ​​the first light conversion unit 151 may be larger than the area of ​​the third light conversion unit 153, and the area of ​​the third light conversion unit 153 may be larger than the area of ​​the fifth light conversion unit 155, but is not limited thereto. Figure 1 ), the area of ​​the light conversion unit may be larger than the area of ​​the corresponding light emitting unit; for example, the area of ​​the first light conversion unit 151 may be larger than the area of ​​the first light emitting unit 131, the area of ​​the third light conversion unit 153 may be larger than the area of ​​the third light emitting unit 133, and the area of ​​the fifth light conversion unit 155 may be larger than the area of ​​the fifth light emitting unit 135, but is not limited thereto.

[0110] The color filter layer 160 is disposed on the light conversion layer 150. The color filter layer 160 includes a first filter unit 161, a second filter unit 162, a third filter unit 163, a fourth filter unit 164, a fifth filter unit 165, a sixth filter unit 166, and a black matrix layer 167. In the direction Z, the first filter unit 161 overlaps the first light conversion unit 151, the second filter unit 162 overlaps the second light conversion unit 152, the third filter unit 163 overlaps the third light conversion unit 153, the fourth filter unit 164 overlaps the fourth light conversion unit 154, the fifth filter unit 165 overlaps the fifth light conversion unit 155, the sixth filter unit 166 overlaps the sixth light conversion unit 156, and the black matrix layer 167 overlaps the black matrix layer 157. The first filter unit 161 and the second filter unit 162 correspond to the first color, the third filter unit 163 and the fourth filter unit 164 correspond to the second color, and the fifth filter unit 165 and the sixth filter unit 166 correspond to the third color. Figure 2F ), the width W10 of the first filter unit 161 away from the surface of the light conversion layer 150 is substantially equal to the width W10 of the second filter unit 162 away from the surface of the light conversion layer 150, and the width W11 of the third filter unit 163 away from the surface of the light conversion layer 150 is substantially equal to the width W11 of the fourth filter unit 164 away from the surface of the light conversion layer 150. The width W10 and the width W11 are respectively the maximum widths of the first filter unit 161 (or the second filter unit 162) away from the surface of the light conversion layer 150 and the third filter unit 163 (or the fourth filter unit 164) away from the surface of the light conversion layer 150 measured along the direction X.

[0111] In the top view (such as Figure 1 ), the area of ​​the first filter unit 161 may be the same as the area of ​​the second filter unit 162, the area of ​​the third filter unit 163 may be the same as the area of ​​the fourth filter unit 164, and the area of ​​the fifth filter unit 165 may be the same as the area of ​​the sixth filter unit 166. Figure 1 ), the area of ​​the third filter unit 163 may be different from the area of ​​the first filter unit 161, and the area of ​​the fifth filter unit 165 may be different from the area of ​​the first filter unit 161 and the area of ​​the third filter unit 163.

[0112] In the present embodiment, the light emitted by the light emitting units (i.e., the first light emitting unit 131, the second light emitting unit 132, the third light emitting unit 133, the fourth light emitting unit 134, the fifth light emitting unit 135, and the sixth light emitting unit 136) may correspond to a third color (for example, blue, but not limited thereto), and the third color is different from the first color and the second color. In the present embodiment, the first light conversion unit 151 and the second light conversion unit 152 may respectively convert the light corresponding to the third color emitted by the first light emitting unit 131 and the second light emitting unit 132 into light corresponding to the first color. Similarly, the third light conversion unit 153 and the fourth light conversion unit 154 may respectively convert the light corresponding to the third color emitted by the third light emitting unit 133 and the fourth light emitting unit 134 into light corresponding to the second color.

[0113] In some other embodiments, the light emitted by the first light emitting unit 131 and the second light emitting unit 132 may correspond to a first color (for example, green, but not limited thereto), and the light emitted by the third light emitting unit 133 and the fourth light emitting unit 134 may correspond to a second color (for example, red, but not limited thereto). The function of the light conversion unit and / or the filter unit is to increase the color purity of the light.

[0114] The cover plate 170 is disposed on the color filter layer 160 . That is, the circuit layer 120 , the light emitting unit layer 130 , the light guide layer 140 , the light conversion layer 150 and the color filter layer 160 may be disposed between the cover plate 170 and the substrate 110 .

[0115] In the present embodiment, the electronic device 100 further includes an insulating layer IL1, an adhesive layer AD1, an adhesive layer AD2, an insulating layer IL2, and an insulating layer IL3. The insulating layer IL1 is disposed on the substrate 110, and the insulating layer IL1 may cover the circuit layer 120 and the light guide layer 140, and the insulating layer IL1 may surround the light emitting unit layer 130. The adhesive layer AD1 is disposed between the light guide layer 140 and the light emitting unit layer 130. The insulating layer IL2 covers and surrounds the light conversion layer 150. The adhesive layer AD2 is disposed between the insulating layer IL2 and the insulating layer IL1. The insulating layer IL3 is disposed between the color filter layer 160 and the light conversion layer 150.

[0116] Then, please also refer to FIG. 2A to FIG. 2F , Figure 3 as well as Figure 4 The following is an explanation of the manufacturing method of the electronic device 100 of this embodiment:

[0117] First, please refer to Figure 2A and Figure 3, a buffer material layer BL2 and an epitaxial structure are sequentially formed on the substrate S1. The epitaxial structure includes a stacking unit U1 and a second semiconductor layer SL2, and the stacking unit U1 includes a first semiconductor layer SL1 and a light-emitting material layer FL. Among them, the substrate S1 and the buffer material layer BL2 may include recycled materials to reduce costs. For example, the substrate S1 may be a recycled silicon wafer. The buffer material layer BL2 may include a first layer BL21, a second layer BL22, and a third layer BL23, wherein the second layer BL22 is located between the third layer BL23 and the first layer BL21, and the second layer BL22 is farther away from the epitaxial structure than the third layer BL23. The material of the first layer BL21 may be aluminum nitride (AlN), the material of the second layer BL22 may be a recycled gallium precursor (for example, including aluminum gallium nitride (AlGaN) and impurities), and the material of the third layer BL23 may be gallium nitride (GaN). In some embodiments, if the buffer material layer BL2 further includes a fourth layer (not shown) located between the third layer BL23 and the first layer BL21, the material of the fourth layer may include a recycled gallium precursor (for example, including aluminum gallium nitride and impurities). The first semiconductor layer SL1 may include a first layer SL11 and a second layer SL12, the material of the first layer SL11 may be N-type gallium nitride (n-GaN), and the material of the second layer SL12 may be indium gallium nitride (InGaN) / gallium nitride. The material of the light-emitting material layer FL may be indium gallium nitride (InGaN) / gallium nitride. The second semiconductor layer SL2 may include a first layer SL21, a second layer SL22, and a third layer SL23, the material of the first layer SL21 may be P-type aluminum gallium nitride (p-AlGaN), the material of the second layer SL22 may be P-type gallium nitride (p-GaN), and the material of the third layer SL23 may be P-type gallium nitride.

[0118] Next, please continue to refer to Figure 2A , an adhesive layer AD1 is formed on the second semiconductor layer SL2, and the adhesive layer AD1 is used to bond the light guide material layer 140a to the second semiconductor layer SL2 of the epitaxial structure.

[0119] Next, please continue to refer to Figure 2A After turning it upside down, the substrate S1 and a portion of the buffer material layer BL2 are removed by, for example, peeling to form a buffer layer BL1 with a rough surface on the first semiconductor layer SL1.

[0120] Next, please refer to Figure 2B , patterning the buffer layer BL1 by etching, for example; and etching the first semiconductor layer SL1, the light-emitting material layer FL and the second semiconductor layer SL2 by MESA, for example, to expose part of the first semiconductor layer SL1, part of the second semiconductor layer SL2 and part of the adhesive layer AD1.

[0121] Next, please refer to Figure 2C , an electrode E1 is formed on the exposed portion of the first semiconductor layer SL1 , and an electrode E2 is formed on the exposed portion of the second semiconductor layer SL2 to form a first light emitting unit 131 , a second light emitting unit 132 , a third light emitting unit 133 and a fourth light emitting unit 134 .

[0122] Next, please continue to refer to Figure 2C , a black matrix layer 137 is formed between two adjacent light emitting units and between the electrode E2 and the stacking unit U1 to substantially form the light emitting unit layer 130 .

[0123] Next, please refer to Figure 2D and Figure 4 , cutting Figure 2C The patterned stacked structure M (including the light guide material layer 140a, the adhesive layer AD1 and the light emitting unit layer 130) is formed to form a rectangular splicing unit U2 and a remaining portion U3 of any shape.

[0124] Next, please continue to refer to Figure 2D and Figure 4 , splicing the splicing unit U2 on the substrate 110, so that the first light-emitting unit 131, the second light-emitting unit 132, the third light-emitting unit 133 and the fourth light-emitting unit 134 can be respectively connected to the corresponding electrodes in the circuit layer 120 through the conductive member C1; Figure 4 In the illustrated embodiment, the remaining portion U3 may be cut and attached to the gap G between two adjacent splicing units U2 on the substrate 110 (or the gap G on the substrate 110 exposed by the splicing units U2), thereby improving the utilization rate of the patterned stacking structure M and saving costs.

[0125] Next, please refer to Figure 2E , the light guide material layer 140a is patterned by etching, for example, to form the opening 141 and the spacer 142 of the light guide layer 140; then, an insulating layer IL1 is formed on the substrate 110, so that the insulating layer IL1 can cover the circuit layer 120 and the light guide layer 140, and the insulating layer IL1 can surround the light emitting unit layer 130. In some embodiments, before patterning the light guide material layer 140a, the light guide material layer 140a can be thinned by grinding, for example, according to design requirements.

[0126] Next, please refer to Figure 2F, an optical substrate is provided, and the optical substrate is assembled onto the substrate 110 through the adhesive layer AD2, so that the light-emitting unit layer 130 is located between the optical substrate and the substrate 110. The optical substrate includes a light conversion layer 150, a color filter layer 160, a cover plate 170, an insulating layer IL2, and an insulating layer IL3. The color filter layer 160 is disposed under the cover plate 170, the light conversion layer 150 is disposed under the color filter layer 160, the insulating layer IL2 is disposed under the light conversion layer 150 and surrounds the light conversion layer 150, and the insulating layer IL3 is disposed between the color filter layer 160 and the light conversion layer 150. In some embodiments, the color filter layer 160 can be omitted depending on the design requirements.

[0127] Other embodiments will be listed below for illustration. It must be noted that the following embodiments use the component numbers and some contents of the previous embodiments, wherein the same numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the previous embodiments, and the following embodiments will not be repeated.

[0128] Figure 5 This is a cross-sectional diagram of an electronic device according to a second embodiment of the present disclosure. Figure 5 and Figure 2F The electronic device 100a of this embodiment and Figure 2F The electronic device 100a of the present embodiment is similar to the electronic device 100, but the difference between the two is that in the electronic device 100a of the present embodiment, the electrode E1a can cover the buffer layer BL1. The electrode E1a can improve the light emitting efficiency by reflecting the light emitted by the light emitting units (such as the first light emitting unit 131, the second light emitting unit 132, the third light emitting unit 133, and the fourth light emitting unit 134). In the present embodiment, the electrode E1a can be made using, for example, a half tone mask, but is not limited thereto.

[0129] Figure 6 It is a top view schematic diagram of an electronic device according to a third embodiment of the present disclosure. Figure 7 for Figure 6 A schematic cross-sectional view of an electronic device along the section line II'. For the sake of clarity and convenience of description, Figure 6 Some components of the electronic device 100b are omitted, and Figure 7 Some components in the electronic device 100b are omitted. Figure 6 , Figure 7 , Figure 1 and Figure 2E The electronic device 100b of this embodiment is similar to Figure 1 and Figure 2EThe electronic device 100 of the present embodiment has the following differences: the electronic device 100b of the present embodiment further includes a plurality of light sensing elements 180, the light emitting unit layer 130b further includes a seventh light emitting unit 138 and a reflective layer 139, the circuit layer 120b further includes a sixth electrode 1216, and the second semiconductor layers SL2 in the first light emitting unit 131, the second light emitting unit 132, the third light emitting unit 133, the fourth light emitting unit 134 and the seventh light emitting unit 138 are connected to each other, that is, in the present embodiment, each light emitting unit has a portion of the second semiconductor layer SL2.

[0130] For more details, please also refer to Figure 6 and Figure 7 The black matrix layer 137 in the light emitting unit layer 130b includes an opening 1371. The opening 1371 may expose a portion of the second semiconductor layer SL2, and the opening 1371 may overlap the light guide layer 140 in the direction Z, and the opening 1371 does not overlap the opening 141 of the light guide layer 140 in the direction Z.

[0131] The stacking unit U1 of the seventh light emitting unit 138 is disposed in the opening 1371 of the black matrix layer 137. Since the stacking unit U1 of the seventh light emitting unit 138 can overlap the light guide layer 140 in the direction Z, the light emitted by the seventh light emitting unit 138 is directed toward the circuit layer 120b. The electrode E1 of the seventh light emitting unit 138 can be electrically connected to the sixth electrode 1216 of the circuit layer 120b through the conductive member C1.

[0132] In this embodiment, the seventh light-emitting unit 138 can be regarded as a light-emitting unit for testing. The seventh light-emitting unit 138 can receive a passive signal, and the frequency of the passive signal can be lower than the frequency of the driving signal of other light-emitting units (for example, the first light-emitting unit 131, the second light-emitting unit 132, the third light-emitting unit 133 and the fourth light-emitting unit 134).

[0133] The reflective layer 139 is disposed on the sidewall of the opening 1371 , and the reflective layer 139 can improve the light emitting efficiency by reflecting the light emitted by the seventh light emitting unit 138 .

[0134] The circuit layer 120b further includes a sixth electrode 1216, and the wiring stack 129 may include but is not limited to a buffer layer 1221, a buffer layer 1222, a gate insulating layer 123, an insulating layer 1241, an insulating layer 1242, a transistor 125, an electrode 126, a planar layer 1271, a wiring layer 128, and a planar layer 1272. The transistor 125 includes a semiconductor SE, a gate GE, a source SD1, and a drain SD2. Among them, the buffer layer 1221 is arranged on the substrate 110, the buffer layer 1222 is arranged on the buffer layer 1221, the semiconductor SE is arranged on the buffer layer 1222, the gate insulating layer 123 is arranged on the semiconductor SE, the gate GE is arranged on the gate insulating layer 123, the insulating layer 1241 is arranged on the gate GE, the insulating layer 1242 is arranged on the insulating layer 1241, the source SD1, the drain SD2 and the electrode 126 are respectively arranged on the insulating layer 1242, the flat layer 1271 is arranged on the source SD1 and the drain SD2, the circuit layer 128 is arranged on the flat layer 1271, the flat layer 1272 is arranged on the circuit layer 128, and the first electrode 1211, the second electrode 1212, the third electrode 1213, the fourth electrode 1214, the fifth electrode 1215 and the sixth electrode 1216 are arranged on the flat layer 1272.

[0135] A plurality of light sensing elements 180 are uniformly disposed on the substrate 110 in an array arrangement, but the present disclosure is not limited thereto. The light sensing element 180 is disposed on the electrode 126 of the circuit layer 120b, and the light sensing element 180 may be surrounded by the flat layer 1271 and the flat layer 1272. The light sensing element 180 may be electrically connected to the electrode 126. In the direction Z, the light sensing element 180 may overlap and correspond to the seventh light emitting unit 138, and the light sensing element 180 does not overlap the opening 141 of the light guide layer 140.

[0136] The light sensing element 180 can be used to detect the light emitted by the seventh light emitting unit 138 to know the quality of the seventh light emitting unit 138 and infer the quality of other light emitting units around the seventh light emitting unit 138. For example, when the light sensing element 180 detects that the seventh light emitting unit 138 is attenuated, it can be inferred that other light emitting units around the seventh light emitting unit 138 may also be attenuated, and thus the other light emitting units can be further adjusted to ensure the light emitting efficiency.

[0137] In the top view (such as Figure 6 ), the area of ​​the light sensing element 180 may be larger than the area of ​​the seventh light emitting unit 138, and the light sensing element 180 may surround the seventh light emitting unit 138. In this embodiment, the area of ​​the light sensing element 180 may be larger than 1.5 times the area of ​​the seventh light emitting unit 138, so that the light sensing element 180 may have enough area to detect the seventh light emitting unit 138, but is not limited thereto.

[0138] Figure 8 It is a schematic top view of an electronic device according to a fourth embodiment of the present disclosure. Fig. 9 for Figure 8 A schematic cross-sectional view of an electronic device along section line II-II'. For the sake of clarity and convenience of description, Figure 8 Some components of the electronic device 100c are omitted. Figure 8 , Fig. 9 , Figure 1 and Figure 2F The electronic device 100c of this embodiment is similar to Figure 1 and Figure 2E The electronic device 100 of the present embodiment differs from the electronic device 100c in that in the light emitting unit layer 130c of the electronic device 100c of the present embodiment, the number of stacking units U1 in different light emitting units is different, and the area and width of the stacking units U1 in different light emitting units are the same.

[0139] Specifically, please refer to Figure 8 , a plurality of stacked units U1 of the same area are uniformly arranged on the substrate 110 in an array arrangement. In this embodiment, the first light emitting unit 131c includes a first number ( Figure 8 Schematically showing 2) stacked units U1 and electrodes E2, the second light emitting unit 132c includes a second number ( Figure 8 Schematically showing 7) stacked units U1 and electrodes E2, the third light emitting unit 133c includes a third number ( Figure 8 Schematically showing a stacking unit U1 and an electrode E2, the fourth light emitting unit 134c includes a fourth number ( Figure 8 Schematically showing 5) stacked units U1 and electrodes E2, the fifth light emitting unit 135c includes a fifth number ( Figure 8 Schematically showing a stacking unit U1 and an electrode E2, the sixth light emitting unit 136c includes a sixth number ( Figure 8 Schematically showing 3 stacked units U1 and electrodes E2. In this embodiment, the first number may be smaller than the second number, the third number may be smaller than the fourth number, and the fifth number may be smaller than the sixth number, but not limited thereto. In this embodiment, the electrode E2 may be electrically connected to the second semiconductor layer SL2, and the electrode E2 may be considered as a common cathode or a common anode.

[0140] As mentioned above, in the present disclosure, the sum of the areas of the stacked units U1 included in a light-emitting unit in a top view can represent the area of ​​the light-emitting unit. Figure 8), the area of ​​the first light emitting unit 131c may be smaller than the area of ​​the second light emitting unit 132c, the area of ​​the third light emitting unit 133c may be smaller than the area of ​​the fourth light emitting unit 134c, and the area of ​​the fifth light emitting unit 135c may be smaller than the area of ​​the sixth light emitting unit 136c. Figure 1 ), the area of ​​the third light-emitting unit 133c is different from the area of ​​the first light-emitting unit 131c, and the area of ​​the fifth light-emitting unit 135c is different from the area of ​​the first light-emitting unit 131c. That is, in this embodiment, since each light-emitting unit includes a different number of stacking units U1, a light-emitting unit containing a larger number of stacking units U1 can be represented as having a larger area, and a light-emitting unit containing a smaller number of stacking units U1 can be represented as having a smaller area. For example, since the first light-emitting unit 131c includes 2 stacking units U1 and the second light-emitting unit 132c includes 7 stacking units U1, the area of ​​the first light-emitting unit 131c is smaller than the area of ​​the second light-emitting unit 132c.

[0141] Generally, in the process of manufacturing the light-emitting units, the epitaxial effect and the luminous efficiency of the light-emitting units in the central area are higher than those of the light-emitting units in the peripheral area due to the different positions of forming the epitaxial structure. Therefore, in the electronic device 100c of the present embodiment, by making the number of stacked units U1 included in the light-emitting units in the central area 111 (i.e., the first light-emitting unit 131c, the third light-emitting unit 133c and the fifth light-emitting unit 135c) smaller than the number of stacked units U1 included in the corresponding light-emitting units in the peripheral area 112 (i.e., the second light-emitting unit 132c, the fourth light-emitting unit 134c and the sixth light-emitting unit 136c) (or making the area of ​​the light-emitting units in the central area 111 smaller than the area of ​​the light-emitting units corresponding to the peripheral area 112), the light emission of the light-emitting units in the central area 111 can be made substantially the same as the light emission of the light-emitting units in the peripheral area 112, thereby improving the display quality.

[0142] Please refer to Fig. 9 , the second semiconductor layers SL2 corresponding to the plurality of stacked units U1 may be connected to each other. For example, the second semiconductor layers SL2 in the first light emitting unit 131c, the second light emitting unit 132c, the third light emitting unit 133c, and the fourth light emitting unit 134c may be connected to each other. In this embodiment, in the case of a first number ( Figure 8 In the first light emitting unit 131c of the stacking unit U1 (schematically shown as two), the light emitting material layers FL in at least two stacking units U1 may be electrically connected to the same second semiconductor layer SL2.

[0143] Please refer to Fig. 9, in the direction Z, the first electrode 1211c in the circuit layer 120c may overlap and correspond to the first light emitting unit 131c, the second electrode 1212c may overlap and correspond to the second light emitting unit 132c, the third electrode 1213c may overlap and correspond to the third light emitting unit 133c, the fourth electrode 1214c may overlap and correspond to the fourth light emitting unit 134c, and the fifth electrode 1215c may overlap and correspond to the electrode E2. The first electrode 1211c, the second electrode 1212c, the third electrode 1213c, and the fourth electrode 1214c may be electrically connected to a corresponding number of stacked units U1 in the first light emitting unit 131c, the second light emitting unit 132c, the third light emitting unit 133c, and the fourth light emitting unit 134c, respectively. In this embodiment, since the number of stacked units U1 electrically connected to the first electrode 1211c is smaller than the number of stacked units U1 electrically connected to the second electrode 1212c, the area of ​​the first electrode 1211c can be smaller than the area of ​​the second electrode 1212c in the top view. Similarly, the area of ​​the third electrode 1213c can also be smaller than the area of ​​the fourth electrode 1214c in the top view.

[0144] In this embodiment, the stacked unit U1 that is not electrically connected to the circuit layer 120 c can be regarded as a dummy epitaxial structure and cannot emit light.

[0145] Fig.10 This is a cross-sectional diagram of an electronic device according to a fifth embodiment of the present disclosure. Fig.10 and Fig. 9 The electronic device 100d of this embodiment and Fig. 9 The electronic device 100c is similar to the electronic device 100d of the embodiment, but the difference between the two is that in the electronic device 100d of the embodiment, the width of the stacking unit U1 in the central area 111 is different from the width of the stacking unit U1 in the peripheral area 112.

[0146] Specifically, please refer to Fig.10 The width W12 of the stacking unit U1 in the first light-emitting unit 131c and the third light-emitting unit 133c located in the central area 111 may be smaller than the width W13 of the stacking unit U1 in the second light-emitting unit 132c and the fourth light-emitting unit 134c located in the peripheral area 112. Thus, the light emission of the light-emitting units in the central area 111 may be substantially the same as that of the light-emitting units in the peripheral area 112, thereby improving the display quality.

[0147] In this embodiment, the width W12 and the width W13 are respectively the maximum widths of the stacking unit U1 in the first light emitting unit 131c (or the third light emitting unit 133c) and the stacking unit U1 in the second light emitting unit 132c (or the fourth light emitting unit 134c) measured along the direction X.

[0148] Fig.11 This is a top view of the electronic device according to the sixth embodiment of the present disclosure. Fig.11 and Figure 8 The electronic device 100e of this embodiment and Figure 8 The electronic device 100e of this embodiment is similar to the electronic device 100c of the present invention, but the difference between the two is that: the electronic device 100e of this embodiment also includes Figure 6 and Figure 7 The plurality of light sensing elements 180 shown in FIG. 1 and the light emitting unit layer 130e further includes Figure 6 and Figure 7 The seventh light emitting unit 138 is shown. The light sensing element 180 can be used to detect the light emitted by the seventh light emitting unit 138 to know the quality of the seventh light emitting unit 138 and infer the quality of other light emitting units around the seventh light emitting unit 138.

[0149] In summary, in the electronic device of the present disclosed embodiment, by making the area of ​​the light-emitting unit in the central area smaller than the area of ​​the corresponding light-emitting unit in the peripheral area (or by making the number of stacked units included in the light-emitting unit in the central area smaller than the number of stacked units included in the light-emitting unit in the peripheral area), the light-emitting efficiency of the light-emitting unit in the central area can be made substantially the same as the light-emitting efficiency of the light-emitting unit in the peripheral area, thereby improving the display quality.

[0150] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. An electronic device, characterized in that: include: substrate; A circuit layer is disposed on the substrate; A first light emitting unit and a second light emitting unit are disposed on the circuit layer and are electrically connected to the circuit layer respectively; as well as a light conversion layer, disposed on the first light emitting unit and the second light emitting unit, and comprising a first light conversion unit overlapping the first light emitting unit and a second light conversion unit overlapping the second light emitting unit; Wherein, the first light conversion unit and the second light conversion unit correspond to a first color, Wherein, in a top view, an area of ​​the first light emitting unit is smaller than an area of ​​the second light emitting unit, and an area of ​​the first light conversion unit is the same as an area of ​​the second light conversion unit.

2. The electronic device according to claim 1, characterized in that: The circuit layer includes a first electrode corresponding to the first light-emitting unit and a second electrode corresponding to the second light-emitting unit, and in a top view, an area of ​​the first electrode is smaller than an area of ​​the second electrode.

3. The electronic device according to claim 2, characterized in that: The first light emitting unit includes a first number of stacked units, the second light emitting unit includes a second number of stacked units, and the first number is smaller than the second number.

4. The electronic device according to claim 3, characterized in that: The stacking unit includes a first semiconductor layer and a light emitting material layer, wherein the first semiconductor layer is located between the light emitting material layer and the circuit layer, and the light emitting material layer is electrically connected to the circuit layer through the first semiconductor layer.

5. The electronic device according to claim 4, characterized in that: The first light emitting unit includes a second semiconductor layer, wherein the light emitting material layers of at least two stacking units among the first number of stacking units are electrically connected to the second semiconductor layer.

6. The electronic device according to claim 1, characterized in that: Also includes: a third light emitting unit; Among them, the light conversion layer includes a third light conversion unit, the third light conversion unit corresponds to the third light-emitting unit and corresponds to the second color, and in the top view, the area of ​​the third light-emitting unit is different from the area of ​​the first light-emitting unit, and the area of ​​the third light conversion unit is different from the area of ​​the first light conversion unit.

7. The electronic device according to claim 6, characterized in that: Also includes: The color filter layer is disposed on the light conversion layer and includes a first filter unit, a second filter unit and a third filter unit. The first light filtering unit overlaps the first light conversion unit, the second light filtering unit overlaps the second light conversion unit, and the third light filtering unit overlaps the third light conversion unit.

8. The electronic device according to claim 7, characterized in that: The first filter unit corresponds to the first color, the third filter unit corresponds to the second color, and in a top view, an area of ​​the third filter unit is different from an area of ​​the first filter unit.

9. The electronic device according to claim 6, characterized in that: The light emitted by the first light emitting unit and the third light emitting unit corresponds to a third color, and the third color is different from the first color and the second color.

10. The electronic device according to claim 1, characterized in that: Also includes: The light guide layer is disposed between the light conversion layer and the first light emitting unit.

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