System and method for cleaning process chamber components

Abstract

Embodiments described herein relate to a process system for cleaning semiconductor process chamber components. The process system includes a process chamber having process chamber components. The process chamber assembly includes a substrate support disposed within a chamber space of the process chamber. A gas distribution assembly faces the substrate support. A gas baffle is fluidly coupled to the gas distribution assembly. A sensor system is coupled to the process chamber and configured to monitor at least one characteristic of the space of the process chamber. A dynamic gas assist is fluidly coupled to the gas baffle and communicatively coupled to the sensor.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to systems and methods for cleaning process chamber components. Background Art

[0002] During semiconductor device processing, volatile precursors are introduced into a process chamber to deposit conformal materials onto a substrate disposed within the volume of the process chamber. The film includes materials such as polysilicon, silicon dioxide, silicon nitride, and other silicon-based materials. The volatile precursors may also cause the film to be deposited on other process chamber components and surfaces, such as chamber walls.

[0003] Deposits accumulate over time on process chamber components and surfaces, resulting in particulate matter and potential contamination on fabricated devices. To reduce particle generation from chamber component deposition, the process chamber must be cleaned to remove process deposition buildup.

[0004] Periodic cleaning of the process chamber is performed to remove process byproducts from the process chamber walls and deposited internal chamber components. Removal of process chamber deposits is achieved by introducing inert or reactive cleaning gases that can chemically react with or bombard surface film deposits. However, conventional methods and apparatus do not provide the desired level of cleaning.

[0005] Therefore, there is a need in the art for an improved method and apparatus for improving process chamber cleaning performance. Summary of the invention

[0006] In some embodiments, a system is provided. The system includes a process chamber having a substrate support disposed within a chamber space of the process chamber. A gas distribution assembly faces the substrate support. A gas baffle is fluidly coupled to the gas distribution assembly. A sensor is coupled to the process chamber and configured to monitor at least one characteristic of the space of the process chamber. A dynamic gas assist is fluidly coupled to the gas baffle and communicatively coupled to the sensor.

[0007] In some embodiments, a device for distributing a cleaning gas to a process space of a semiconductor process chamber is provided. The device includes a movable body disposed within a housing. The housing is concentric with the movable body. A split wing divides the movable body into two and is movable along an axis perpendicular to the longitudinal axis of the movable body. A blocking plate is coupled to the movable body and disposed adjacent to the split wing.

[0008] In some embodiments, a method for cleaning semiconductor deposition chamber components is provided. The method includes providing a cleaning gas to a process space of a process chamber using a first operating condition. The process chamber includes the chamber components. The method includes detecting a characteristic indicating a reaction between the cleaning gas and a composition disposed on one or more chamber components. The method includes adjusting the first operating condition based on the characteristic. The first operating condition includes a gas flow distribution of the cleaning gas in one or more zones of the process space. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order that the above-recited features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly outlined above may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of their scope, and other equally effective embodiments may be admitted.

[0010] Figure 1 Process systems for performing the process methods described herein are schematically illustrated.

[0011] Figure 2A A first side view of a dynamic gas assist according to some embodiments is schematically illustrated.

[0012] Figure 2B A gas baffle according to some embodiments is schematically illustrated.

[0013] Figure 3 A second side view of a dynamic gas assist is schematically illustrated according to some embodiments.

[0014] Figure 4 A top view of a process chamber is schematically illustrated according to some embodiments.

[0015] Figure 5 Schematically illustrates a top view of a dynamic gas assist in a first position, according to some embodiments.

[0016] Figure 6 Schematically illustrates a top view of a dynamic gas assist in a second position according to some embodiments.

[0017] Fig. 7A A process flow diagram of a method according to some embodiments is depicted.

[0018] Figure 7B A process flow diagram of a method according to some embodiments is depicted.

[0019] Figure 8 Schematically illustrates a top view of a process space according to some embodiments.

[0020] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0021] Embodiments of the present disclosure generally provide apparatus and methods for supporting a gas baffle in a process chamber. The present disclosure will be described below with respect to a plasma enhanced chemical vapor deposition (PECVD) chamber. It should be understood that the present disclosure is applicable to other chambers not depicted in the figures.

[0022] Figure 1 A process system 100 for performing the process method described herein is schematically illustrated. Here, the process system 100 is configured to provide process conditions for processing substrates and for cleaning the interior of a process chamber 101. The process chamber 101 is suitable for a PECVD process for manufacturing circuit systems on a large area substrate made of glass, polymer or other suitable substrates. The chamber 101 is configured to form structures and devices on a large area substrate for use in the manufacture of a liquid crystal display (LCD) or flat panel display, a photovoltaic device for an array of solar cell units, or other structures. The structure can be a plurality of back channel etched reverse staggered (bottom gate) thin film transistors, which can include multiple sequential deposition and mask operations. Other structures may include pn junctions to form diodes for photovoltaic cell units. The process system 100 is also capable of cleaning residues that may be deposited on process chamber components during the PECVD process.

[0023] like Figure 1 As shown, the process system 100 includes a process chamber 101 having a process space 102, a remote plasma source 112, and a gas source 114. A plurality of chamber components may be disposed within or form the process space 102, such as a chamber bottom 103, at least one chamber sidewall 105, a substrate support 104, and a gas distribution assembly 106. A gas baffle 108 is disposed above the gas distribution assembly 106 and is configured to direct gas through the gas distribution assembly 106 and to the process chamber interior surfaces and components. A dynamic gas assist 110 is disposed above the gas baffle 108 and fluidly coupled to the gas baffle 108. The dynamic gas assist 110 is communicatively coupled to a sensor controller 120. In some embodiments, the sensor controller 120 is communicatively coupled to a central processing unit (CPU) 122. The sensor controller 120 is communicatively coupled to a sensor 116, such as a photoelectric sensor. The sensor 116 is configured to monitor at least one characteristic of the process space 102, such as an optical characteristic. In some embodiments, the sensor 116 is mounted on the viewing window 124 .

[0024] In some embodiments, removing the deposition byproducts from the process chamber includes ionizing a fluorine-containing gas into fluorine radicals with a remote plasma source 112 and then flowing the radicals into the process chamber 101 to clean the interior and components of the process chamber. Example cleaning gases include oxygen-containing gases (such as oxygen and / or ozone), and fluorine-containing gases (such as NF3, chlorine-containing gases, or combinations thereof).

[0025] When fluorine radicals react with films deposited on the walls of the process chamber during NF3 cleaning, visible light is emitted. When the reaction terminates, the light becomes weaker and is no longer visible. The film can be a silicon-containing film, such as silicon oxide, silicon nitride, silicon oxynitride, or amorphous silicon. Conventional methods for NF3 in-situ plasma cleaning rely on humans observing visible light to determine the cleaning endpoint. Once the light is no longer visible, the cleaning process stops. As a result, the process chamber is typically either over-cleaned (which can cause damage to chamber parts) or under-cleaned (which can cause deposited particles to peel off the chamber walls and interfere with substrate processing).

[0026] Without being bound by theory, it is believed that cleaning rate uniformity may generally be challenging due to variations in factors, process chamber design, process chamber size, and differences in various remote plasma sources that may be used for process chambers. In some embodiments, the rate and uniformity of cleaning of a process chamber may be affected by local factors, such as gas flow rate, pressure, power, and gas component ratio. In some embodiments, global factors that may affect the rate and uniformity of cleaning of a chamber include gas distribution assembly design and whether a mask sheet is used. Conventional processes have included increasing gas flow rates to increase cleaning effects or increasing throttle valves to produce pressurized gas flows (e.g., 1500 Torr). Increasing gas flow rates and increasing throttle valves may waste expensive gases, such as nitrogen trifluoride, which may be harsh on chamber components, or may be ineffective in some cases. In addition, conventional processes do not allow for adjustment of cleaning by process space zones with different cleaning requirements. The system described herein provides adjustment of cleaning gas conditions, which reduces the amount of cleaning gas used, prevents damage to chamber components, and enhances cleaning effects.

[0027] Figure 2AA first side view of a dynamic gas assist 110 according to some embodiments is schematically illustrated. The dynamic gas assist 110 described herein is capable of dynamically controlling the cleaning gas flow rate and direction from a remote plasma source 112 to adapt to changing local and global factors. The dynamic gas assist 110 is controlled using a sensor feedback system communicatively coupled to a sensor 116. The sensor 116 monitors the intensity of light indicative of a cleaning endpoint, such as visible light (e.g., having a wavelength of about 380 nm to about 740 nm), such as blue light (e.g., having a wavelength of about 430 nm to about 500 nm), green light (e.g., having a wavelength of about 520 nm to about 565 nm), yellow light (e.g., having a wavelength of about 565 nm to about 590 nm), or a combination thereof. In some embodiments, the sensor 116 is a photosensor, such as a cadmium sulfide (CdS) sensor. Any sensor 116 capable of detecting light having a wavelength visible to the human eye is contemplated. Although Figure 2A A single sensor 116 is shown in FIG. 1 , but additional sensors are contemplated, such as about 2 to about 10 sensors, such as about 3 to about 5 sensors for different zones of the process space. One or more of the zones may overlap.

[0028] In some embodiments, the dynamic gas assist 110 includes a split wing 206 and a blocking plate 202 formed in a movable body 204, which is further enclosed in an outer shell 208. The movable body 204 is coupled to the outer shell 208 so that the movable body 204, the split wing 206, and the blocking plate 202 can rotate along a longitudinal axis (e.g., an axis parallel to the Y axis through the center of the outer shell) in the outer shell 208. The movable body 204 is separated from the outer shell 208 by one or more spacers 210. The one or more spacers 210 provide a magnetic seal so that the movable body 204 can rotate relative to the outer shell 208. The outer shell 208 is concentric with the movable body 204, thereby forming an annular space between the outer shell and the movable body. In some embodiments, the annular space includes a cooling channel. The dynamic gas assist 110 is coupled to the lid 107 of the process chamber via fasteners 212.

[0029] The split wing 206 and the blocking plate 202 divide the space within the movable body into two halves along the diameter of the movable body 204. The split wing 206 is rotatable and coupled to the movable body 204 so that the split wing 206 rotates along an axis (e.g., parallel to the Z axis) perpendicular to the longitudinal axis (e.g., parallel to the Y axis) of the movable body 204. The blocking plate 202 is positioned between the base of the split wing 206 and the gas baffle 108.

[0030] Rotation of the split wing 206 within the movable body 204 controls the amount of gas flow in each respective half of the movable body 204. Rotation of the movable body 204 within the outer housing 208 controls the direction of gas flow out of the movable body 204 through the gas baffle 108 and into the process chamber 101. Aspects of the dynamic gas assist 110 enable real-time control of cleaning time, cleaning, and endpoint detection. The radius (R s ) extends from the rotation axis of the split wing 306 to the distal end of the split wing 306. The radius (R b ) is defined as from the rotation axis of the movable body to the inner surface of the movable body 204. b With R s The ratio may be about 10:1 to about 3:2, such as about 10:3 to about 1:2.

[0031] like Figure 2B As shown, the gas baffle 108 includes a plurality of openings 205A to 205D. Each opening 205A to 205D is separated by a spoke 211. Each of the spokes 211 is connected to the geometric center of the back plate 140 at the hub 215. The hub 215 includes a vertex 275, which is close to the dynamic gas assist. Each of the spokes 211 formed by the material of the back plate 140 includes a cross structure 220. Each of the openings 205A to 205D is arranged in a quadrant separated by the spokes 211. The size of each of the openings 205A to 205D is set to maximize airflow or conductivity. In one embodiment, the spokes 211 are positioned within the cross structure 220 at 90 degree intervals. In one embodiment, the spokes 211 are substantially straight along the length direction.

[0032] Figure 3 A second side view of a dynamic gas assist is schematically illustrated according to some embodiments. Figure 3 The depicted dynamic gas assist 110 may be Figure 2A The dynamic gas assist 110 is depicted rotated 90 degrees. The dynamic gas assist 110 is made of any material that is resistant (e.g., non-corrosive) to a cleaning gas (e.g., a fluorine-containing gas), such as an aluminum-containing material such as an aluminum alloy, an anodized aluminum alloy, Al2O3 ceramic, or a combination thereof. The housing 208 includes a first major surface 208A coupled to the lid 107 of the process chamber 101 via fasteners 304 and a second major surface 208B connected to a conduit coupled to a remote plasma source via fasteners 306.

[0033] The split wing 206 is in a vertical position and is substantially coplanar with the baffle 202. In some embodiments, the split wing 206 is composed of an anodized material, such as an anodized aluminum alloy, to minimize fluorine recombination. The split wing 206 is coupled to a first motor 302A. The first motor 302A actuates the split wing 206 to tilt or rotate about an axis 302Z parallel to the Z axis. The movable body 204 is coupled to a second motor 302B, which actuates the movable body 204 to rotate about a longitudinal axis 302Y parallel to the Y axis. The vertex 375 of the baffle is close to the vertex 275 of the gas baffle 108. Each of the first motor and the second motor can be a servo motor communicatively coupled to the feedback system described herein.

[0034] A feedback system may be connected between the one or more sensors and the dynamic gas assist 110, so that the gas baffle 108 operates in response to the light intensity information detected by the one or more sensors 116. The one or more sensors 116 may be used by the feedback system to determine areas of lower cleaning rates in the process space 102. The feedback system may then use a motor system (e.g., a first motor and a second motor) coupled to the dynamic gas assist 110 to control operating time and conditions, such as redirecting and increasing the cleaning gas flow to the area with a lower cleaning rate to increase the cleaning rate of the corresponding area.

[0035] The feedback system may also be connected to the CPU 122 for cleaning endpoint detection. The CPU 122 may be communicatively coupled to the remote plasma source 112 and / or gas source 114 and may be capable of stopping the cleaning process when the light intensity detected by one or more photosensors reaches a predetermined intensity.

[0036] Figure 4 A top view of a process volume 402 coupled to five dynamic gas assists (eg, 404A, 404B, 404C, 404D, 404E, collectively 404) is schematically shown according to some embodiments. During cleaning, the light intensity is Figure 4 The highest in the depicted zone 406, which can be detected using one or more sensors 116. Each of the dynamic gas assists 110 has a rotating movable body 204 and tilted split wings 206 so that the gas flow is focused in the direction of zone 406. In some embodiments, one or more of the dynamic gas assists (such as 404B and 404C) can be turned off so that no gas is provided through the selected dynamic gas assist. Selectively controlling each dynamic gas assist at various zones of the process space enables enhanced cleaning control. Although Figure 4 Five dynamic gas assists are depicted in FIG. 1 , but other numbers of dynamic gas assists are contemplated, such as a single centrally located dynamic gas assist, or additional dynamic gas assists depending on the size of the process chamber.

[0037] Figure 5 A top view of a dynamic gas assist 110 according to some embodiments is schematically illustrated. The split wing 206 divides the space of the movable body 204 into a first space 510 and a second space 512. The split wing 206 is set in a vertical position as indicated by the angle guide 506 and the reference line 502. The reference line 502 is set at the center of the thickness of the top edge of the split wing 206. The angle guide 506 is oriented at a zero degree position. Due to the vertical orientation of the split wing 206, the clean gas flows equally through the space between the first space 510 and the second space 512. The movable body 204 is angled at the first position so that the clean gas is directed to the first zone and the second zone of the process space. The first zone receives the clean gas via the first space 510 of the movable body, and the second zone receives the clean gas via the second space 512 of the movable body.

[0038] Figure 6 A top view of a dynamic gas assist 110 according to some embodiments is schematically illustrated. The movable body 204 is rotated along the longitudinal axis at a second position that is rotated clockwise relative to the first position. The second position corresponds to a third zone and a fourth zone of the process space. The third zone receives the clean gas via the first space 510 of the movable body, and the fourth zone receives the clean gas via the second space 512 of the movable body. The split wing 206 is tilted at an angle relative to the vertical direction, as indicated by the angle guide 506 and the reference line 502, which is tilted toward or within the first space 510 of the movable body 204. The tilt angle turns the clean gas so that an increased volume of the clean gas is directed to the second space 512 corresponding to the fourth zone of the process space. The volume ratio of the first space to the second space of the movable body can be controlled by controlling the tilt angle of the split wing 206 (e.g., as shown by the angle guide 506). The gas flow ratio between the first space and the second space can be about 10:1 to about 1:10 based on the total volume flow through the movable body, such as about 5:1 to about 3:1, or about 1:3 to about 1:1, or about 1:5 to about 1:3. For example, a 30 degree rotation will produce a gas flow ratio between the first space and the second space of about 2:1 to about 3:2 based on the total volume flow through the movable body, wherein the movable body radius (R b ) and the split wing radius (R s ) is about 10:4. In particular, when the split wing is in a vertical position, the total cross-sectional area (A) of the movable body y can be determined by b ) (For example, A b = π x R b 2) and the cross-sectional area of ​​each hemisphere (e.g., A1 (at θ = 0) = A2 (at θ = 0) = A b / 2). The thickness of the split wing cross section can be determined by (for example, when θ = 30 degrees, the thickness is about R s / 2) to calculate the cross-sectional area of ​​the split wing at the angled position (for example, at θ = 30). From the top view, the cross-sectional area of ​​the split wing is about A s = 2 x R b x R s / 2. At 0 = 30 degrees, the volume division between the first space and the second space corresponds to the ratio of the cross-sectional hemisphere at 0 = 30 degrees, where A1 (at θ = 30) = A1 (at θ = 0) + A s and A2 (at θ=30) = A2 (at θ=0). Therefore, the volumetric airflow split is approximately A1 (at θ=30):A2 (at θ=3).

[0039] While a single split wing is depicted, additional split wings are contemplated, such as a second split wing perpendicular to the first split wing, to divide the space into quadrants or additional spaces.

[0040] Fig. 7A and Figure 7B A process flow diagram depicting a method 700A, 700B of cleaning a process chamber component according to some embodiments. Figures 1 to 6 The system and apparatus are suitable for performing Fig. 7A and Figure 7B Methods 700A, 700B are described. Other systems and devices are also contemplated.

[0041] The method 700A includes providing a cleaning gas to a process space of a process chamber using a first operating condition at activity 702. The process chamber includes chamber components such as one or more sidewalls 105, a lid 107, a substrate support 104, a gas baffle 108, or a combination thereof. The first operating condition may be a gas flow rate, a gas flow direction, a gas flow ratio between two or more zones of a dynamic gas assist 110.

[0042] Other operating conditions may include adjusting the chamber pressure to maximize the cleaning rate by adjusting the valve from a first position to a second position, such as from a fully open position to a partially open position.Other operating conditions may include adjusting the spacing between the gas distribution assembly 106 and the substrate support 104 .

[0043] In some embodiments, the total gas flow rate can be about 30 slm to about 70 slm, such as about 40 slm to about 60 slm. The cleaning gas is provided to the process space by exciting nitrogen trifluoride from a gas source to form fluorine radicals in a remote plasma source and providing the fluorine radicals to the process space. The fluorine radicals react with the composition to remove the composition from one or more chamber components.

[0044] The cleaning gas is provided to the process space from one or more remote plasma sources via a dynamic gas assist. The dynamic gas assist includes a movable body disposed within a housing. The housing is concentric with the movable body. The split wing divides the movable body into two and is movable along an axis perpendicular to the longitudinal axis of the movable body. The split wing can rotate or tilt in either direction along an axis perpendicular to the longitudinal axis of the movable body. The dynamic gas assist further includes a baffle coupled to the movable body and disposed adjacent to the split wing.

[0045] In some embodiments, the total gas flow rate can be divided between two or more spaces within the dynamic gas assist. The direction and ratio of the gas flow rate between the spaces can be adjusted by rotating the movable body of the dynamic gas assist and / or tilting the split wings of the dynamic gas assist.

[0046] Method 700A includes detecting, in activity 704, a characteristic indicative of a reaction between a cleaning gas and a composition disposed on one or more chamber components. The composition may be any of the film compositions described herein, such as a silicon-containing composition, such as silicon nitride. In some embodiments, the characteristic is an intensity of light emitted during the reaction of the cleaning gas and the composition. Detecting the characteristic may include detecting a first light intensity at a first zone of the process space and detecting a second light intensity at a second zone of the process space. Other characteristics, such as reflectivity, emissivity, eddy current value, resistivity, or characteristics of a visual image are also contemplated.

[0047] Method 700A includes adjusting a first operating condition based on the characteristic in activity 706. In some embodiments, the first operating condition includes a gas flow distribution of a cleaning gas in one or more zones of the process space. In some embodiments, the method further includes redirecting a gas flow direction of the cleaning gas from the first zone to the second zone. The first light intensity is lower than the second light intensity.

[0048] Figure 7B The depicted method 700B includes providing a cleaning gas to a process volume of a process chamber at activity 701, wherein process chamber components are disposed in the process chamber, such as Fig. 7AThe cleaning gas is configured to clean a composition disposed on a process chamber component. During cleaning, in activity 703, a characteristic indicative of a reaction between the cleaning gas and the composition disposed on one or more chamber components is detected. In activity 705, it is determined that an operating condition for providing the cleaning gas is to be modified based on the characteristic. In some embodiments, the characteristic is a light intensity difference between a first zone and a second zone in the process zone. In particular, the light intensity in the first zone may be higher than the second zone, which would signal a reduction in the cleaning gas to the second zone relative to the first zone.

[0049] In some embodiments, the operating condition to be modified is a total cleaning gas flow rate to the process space, a cleaning gas flow ratio of the first zone relative to the second zone, a total cleaning time, a composition of the cleaning gas, or a combination thereof. In activity 707, the operating condition is adjusted to regulate cleaning of the chamber components.

[0050] Figure 8 A top view of a process space 801 according to some embodiments is schematically illustrated. The process space 801 includes two dynamic gas assists 802A, 802B and four sensors 804A, 804B, 804C, 804D. Each of the sensors is oriented in a predetermined direction to monitor characteristics in different zones of the process space, such as zone 1, zone 2, zone 3, and zone 4. Each of the sensors is capable of monitoring characteristics in one or more of the zones. For example, sensor 804A is capable of monitoring sensing area 814A, sensor 804B is capable of monitoring sensing area 814B, sensor 804C is capable of monitoring sensing area 814C, and sensor 804D is capable of monitoring sensing area 814D. One or more sensing areas may overlap with one or more zones. Sensor readings may be compared to each other or cross-referenced to determine zones within the process space that require additional cleaning. In particular, if sensor 804A and sensor 804D detect high light intensity, it may be inferred that zone 2 requires further cleaning. One or both of the dynamic gas assists 802A, 802B may be adjusted to direct more gas flow to zone 2. Similarly, if a single dynamic assist is in the center of the process space, the single dynamic assist may be directed in real time or substantially real time to zones with higher light intensity readings.

[0051] The methods and systems described herein enable dynamic control of the delivery of cleaning gas to zones of a process space to achieve enhanced cleaning and efficient use of the cleaning gas. The cleaning rate of each zone can be controlled to achieve a uniform cleaning rate across the process space.

[0052] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope of the disclosure, and the scope of the disclosure is determined by the appended claims.

Claims

1. A system, comprising: A process chamber, the process chamber comprising a substrate support, the substrate support being disposed in a chamber space of the process chamber; a gas distribution assembly, the gas distribution assembly facing the substrate support; a gas baffle fluidly coupled to the gas distribution assembly; a sensor coupled to the process chamber and configured to monitor at least one characteristic of the volume of the process chamber; as well as A dynamic gas assist is fluidly coupled to the gas baffle and communicatively coupled to the sensor.

2. The system of claim 1, wherein the dynamic gas assist is configured to be coupled to a clean gas source.

3. The system of claim 1, wherein the dynamic gas assist comprises a plurality of components, each component coupled to the process chamber at a different location, each component being in fluid communication with one or more remote plasma sources.

4. The system of claim 1, wherein the dynamic gas assist comprises a movable body that is rotatable about a central longitudinal axis of the movable body.

5. The system of claim 1, wherein the system further comprises a plurality of sensors, each sensor being positioned and oriented to monitor a zone of the process space.

6. The system of claim 5, wherein a first sensor among the plurality of sensors is configured to monitor a first zone of the process space, and a second sensor among the plurality of sensors is configured to monitor a second zone of the process space, wherein the first zone and the second zone partially overlap each other.

7. The system of claim 1, wherein the dynamic gas assist further comprises a split wing coupled to the movable body, the split wing configured to tilt about an axis perpendicular to a longitudinal axis of the movable body.

8. The system of claim 1, a first motor configured to actuate the movable body, and a second motor configured to actuate the split wing.

9. The system of claim 1, wherein the gas baffle comprises: a back plate having a central hole formed therethrough; as well as An integrated cross structure is formed in the central hole, the cross structure forming a plurality of openings.

10. An apparatus for distributing a cleaning gas to a process volume of a semiconductor process chamber, the apparatus comprising: A movable body, the movable body being disposed in a housing, the housing being concentric with the movable body; a split wing that divides the movable body into two and is movable along an axis perpendicular to the longitudinal axis of the movable body; as well as A blocking plate is coupled to the movable body and disposed adjacent to the split wing.

11. The device of claim 10, wherein the housing comprises: a first major surface having one or more apertures for securing the first major surface to a lid of a process chamber; as well as and a second major surface opposite the first major surface and configured to be coupled to a remote plasma source.

12. The apparatus of claim 11, wherein the blocking plate includes a first edge adjacent to the first major surface of the housing and a second edge substantially parallel to an edge of the split wing.

13. The apparatus of claim 12, wherein the first edge forms a vertex, wherein the blocking plate has a maximum height at a center of the blocking plate.

14. The apparatus of claim 10, further comprising: a first motor coupled to the movable body; and a second motor coupled to the split wing.

15. A method for cleaning a semiconductor deposition chamber component, the method comprising: providing a cleaning gas to a process volume of a process chamber including the chamber components using a first operating condition; detecting a property indicative of a reaction between the cleaning gas and a composition disposed on one or more chamber components; as well as The first operating condition is adjusted based on the characteristic, the first operating condition including a gas flow distribution of the cleaning gas within one or more zones of the process volume.

16. The method of claim 15, wherein the characteristic is the intensity of light emitted during the reaction of the cleaning gas and the composition.

17. The method of claim 15, wherein detecting the characteristic comprises: detecting a first light intensity at a first region of the process space; as well as A second light intensity at a second region of the process space is detected.

18. The method of claim 17, further comprising redirecting a gas flow direction of the cleaning gas from the first zone to the second zone, wherein the first light intensity is lower than the second light intensity.

19. The method of claim 15, further comprising: directing the cleaning gas from a remote plasma source to the process volume via a dynamic gas assist, the dynamic gas assist comprising: A movable body, the movable body being disposed in a housing, the housing being concentric with the movable body; a split wing that divides the movable body into two and is movable along an axis perpendicular to the longitudinal axis of the movable body; and A blocking plate is coupled to the movable body and disposed adjacent to the split wing.

20. The method of claim 15, wherein providing the cleaning gas comprises exciting nitrogen trifluoride to form fluorine radicals and reacting the fluorine radicals with the composition to remove the composition from one or more of the chamber components.

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