A spatial atomic layer deposition device

Abstract

The present invention discloses a spatial atomic layer deposition apparatus, and the spatial atomic layer deposition apparatus includes: a reaction chamber, the reaction chamber includes a first side wall and a second side wall, a susceptor inlet (10a) is provided on the first side wall, and a susceptor outlet (10b) is provided on the second side wall. A susceptor carrying a substrate can enter the interior of the reaction chamber through the susceptor inlet, and can pass through the susceptor outlet and leave the reaction chamber; a spray module (3), the spray module includes an air outlet surface, and a plurality of air outlet holes are formed on the air outlet surface. The spray module is arranged at the bottom of the reaction chamber, and the air outlet surface faces the top of the reaction chamber; a susceptor transfer device, the susceptor transfer device is used to drive the susceptor (4) to translate in the reaction chamber so that the surface of the substrate to be deposited faces the air outlet surface.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor and pan-semiconductor equipment, and specifically, to a spatial atomic layer deposition equipment. Background Art

[0002] Semiconductor devices usually include a substrate and multiple layers of patterns or film layers formed on the substrate. For example, a photovoltaic cell includes an electron transport layer.

[0003] The film thickness of the electron transport layer is usually in the range of 20 to 50 nm. In order to precisely control the formation of the film layer, a gas deposition process can be used.

[0004] For example, when preparing the electron transport layer, evaporation coating process and atomic layer deposition process are often used to obtain a nanoscale film thickness, but the existing atomic layer deposition process has low production efficiency and does not match the front and back coating equipment.

[0005] Therefore, it is necessary to develop a new structure of atomic layer deposition equipment to improve the efficiency, which is an urgent technical problem to be solved in this field. Summary of the Invention

[0006] The present invention aims to solve one of the technical problems in the related art to a certain extent. For this purpose, the present invention provides a kind of...

[0007] To achieve the above object, as the first aspect of the present invention, a spatial atomic layer deposition equipment is disclosed. The spatial atomic layer deposition equipment includes:

[0008] A reaction chamber, the reaction chamber includes a first side wall and a second side wall. A carrier plate inlet is provided on the first side wall, and a carrier plate outlet is provided on the second side wall. A carrier plate carrying a substrate can enter the interior of the reaction chamber through the carrier plate inlet, and can pass through the carrier plate outlet and leave the reaction chamber;

[0009] A spraying module, the spraying module includes an air outlet surface, and a plurality of air outlet holes are formed on the air outlet surface. The spraying module is arranged at the bottom of the reaction chamber, and the air outlet surface faces the top of the reaction chamber;

[0010] A carrier plate transmission device, the carrier plate transmission device is used to drive the carrier plate to translate in the reaction chamber so that the surface to be deposited of the substrate faces the air outlet surface.

[0011] Further, the first sidewall and the second sidewall are oppositely arranged. The reaction chamber further includes a third sidewall and a fourth sidewall, the third sidewall and the fourth sidewall are oppositely arranged. A plurality of first transmission holes are arranged on the third sidewall along the transmission direction, and a plurality of second transmission holes are arranged on the fourth sidewall along the transmission direction. The carrier plate transmission device includes an active transmission device and a driven transmission device. The active transmission device and the driven transmission device are used to carry and drive the carrier plate to translate in the reaction chamber from both sides of the carrier plate. The active transmission device is arranged on the third sidewall through the first transmission holes, and the driven transmission device is arranged on the fourth sidewall through the second transmission holes. The plurality of first transmission holes correspond to the plurality of second transmission holes one by one.

[0012] Further, the active transmission device is connected to a motor and driven by an electrode. The active transmission device drives the driven transmission device through a transmission rod to achieve synchronous transmission.

[0013] Further, both the active transmission device and the driven transmission device include a plurality of transmission bodies, a plurality of synchronous belts and a plurality of auxiliary transmission parts. The plurality of transmission bodies are arranged at intervals along the transmission direction, and the auxiliary transmission parts are arranged between adjacent transmission bodies. Any adjacent transmission bodies and the auxiliary transmission parts therebetween are connected by the synchronous belts so that the plurality of transmission bodies can be synchronously transmitted.

[0014] The transmission body is inserted into the first transmission hole or the second transmission hole to form a transmission shaft. The plurality of transmission shafts can rotate in the same direction to carry and transmit the carrier plate.

[0015] Further, the transmission shaft includes an extension part, a carrier plate contact part and a limiting part. The extension part, the carrier plate contact part and the limiting part are arranged and connected along the axial direction of the transmission shaft. The limiting part is arranged between the extension part and the carrier plate contact part. The carrier plate contact part is used to carry and transmit the carrier plate. The outer diameter of the limiting part is larger than the outer diameter of the carrier plate contact part so that the limiting part limits the carrier plate in the width direction.

[0016] Further, the spraying module is provided with a plurality of installation notches at the edges close to the third sidewall and the fourth sidewall. The plurality of installation notches are arranged at intervals along the transmission direction. The plurality of installation notches correspond to the plurality of transmission shafts. The shape of the installation notch matches the transmission shaft so that there is a gap between the spraying module and the adjacent plurality of transmission shafts.

[0017] Further, the atomic layer deposition equipment further includes baffles oppositely arranged along the width direction of the reaction chamber. The baffles are arranged between the spraying module and the sidewall of the reaction chamber. The baffles and the sidewall enclose the spraying module.

[0018] The baffle is located on the lower side of the transmission shaft. The baffle includes a plurality of grooves arranged along the length direction. The plurality of grooves correspond to the plurality of transmission shafts one by one. The shape of the groove matches the transmission shaft, so that along the axial direction of the transmission shaft, the groove can accommodate part of the transmission shaft.

[0019] Further, the baffle includes a plurality of strengthening structures. The plurality of strengthening structures are arranged at intervals along the transmission direction. The strengthening structure includes a connecting portion and a fixing portion. The connecting portion is arranged on the side wall of the baffle. The fixing portion supports and fixes the baffle through the connecting portion. The baffle is fixedly connected to the bottom surface of the reaction chamber through the fixing portion.

[0020] Further, the spraying module further includes a plurality of supporting and limiting members. The supporting and limiting members are arranged between the spraying module and the bottom of the reaction chamber, and are used to support the spraying module and make a set interval exist between the spraying module and the carrier plate.

[0021] Further, the supporting and limiting members include a plurality of limiting rods and a plurality of adjusting mechanisms. The spraying module includes a plurality of first limiting holes.

[0022] The first end of the limiting rod is fixedly connected to the bottom of the reaction chamber, and the second end of the limiting rod is movably connected to the spraying module through the first limiting hole, so that the spraying module is limited through the first limiting hole.

[0023] Both ends of the adjusting mechanism are fixedly connected to the bottom of the reaction chamber and the spraying module respectively. The adjusting structure is used to adjust the distance between the spraying module and the carrier plate.

[0024] Further, the set interval is between 2 mm and 10 mm.

[0025] Further, the spatial atomic layer deposition equipment further includes a carrier plate. The carrier plate is carried by the carrier plate transmission device. A plurality of accommodating holes are formed on the carrier plate. The plurality of accommodating holes are arranged in multiple rows and multiple columns along the transmission direction. The accommodating hole has a stepped structure in the thickness direction of the carrier plate. The stepped structure has a substrate carrying surface. The carrier plate carries the substrate through the substrate carrying surface.

[0026] Further, the spatial atomic layer deposition equipment further includes an upper cavity cover and a heating module. The upper cavity cover is used to seal the reaction chamber from the top of the reaction chamber. The heating module is arranged on the upper cavity cover.

[0027] Furthermore, the heating module includes multiple heating elements and multiple heating plates, and the multiple heating elements are fixedly connected to the upper chamber cover and the heating plates. The heating elements are used to transfer electrical energy from the outside into the reaction chamber to heat the heating plates, and the multiple heating plates are arranged along the transmission direction.

[0028] Furthermore, the plurality of heating plates include a middle heating plate and an edge heating plate, and a size of the middle heating plate along the transmission direction is larger than a size of the edge heating plate along the transmission direction.

[0029] Furthermore, multiple limiting fixing holes are opened on the heating plates, and the heating module also includes a fastener, and the fastener passes through the limiting fixing holes and is fixedly connected to the upper cavity cover, so that the heating plate is fixedly connected to the upper cavity cover, and multiple limiting fixing holes are arranged along the edge of the heating plate, and multiple limiting fixing holes have limiting spaces along the transmission direction and / or the width direction of the reaction chamber.

[0030] Furthermore, the space-type atomic layer deposition equipment also includes a vacuum system, which includes a plurality of vacuum pipelines, and the vacuum pipelines are arranged at the lower side of the spray module in the reaction chamber. The plurality of vacuum pipelines are arranged at intervals along the transmission direction, and the vacuum pipelines include a plurality of exhaust ports, so that the gas exhausted from the spray module is discharged from the lower side through the exhaust ports.

[0031] Furthermore, the spatial atomic layer deposition equipment also includes a valve system, which is respectively connected to the carrier inlet and the carrier outlet, and the carrier inlet and the carrier outlet are also provided with a plurality of fixed installation countersunk holes, which are used to be fixedly connected to the valve system.

[0032] The spatial atomic layer deposition equipment of the present application has the characteristics of small particle pollution, simple operation, and high production efficiency, and the deposited film layer has higher quality. The spray module is arranged at the bottom of the reaction chamber, so that the gas source sprays upward to realize the bottom-up atomic layer coating process. While the deposition quality is higher, it can also reduce the pollution of the film layer by particles, polymers, etc. in the cavity. In addition, the upward deposition coating can adapt to the operation mode of other coating equipment in the existing production line. It can be integrated for coating, reduce the number of cleaning times, reduce the frequency of breaking the air, and do not require additional flipping processing, which greatly improves production efficiency and ease of operation and reduces labor costs.

[0033] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and the accompanying drawings. The best embodiments or means of the present invention will be shown in detail in combination with the accompanying drawings, but it is not a limitation to the technical solution of the present invention. In addition, there are multiple occurrences of these features, elements, and components in each of the following texts and drawings, and different symbols or numbers are marked for convenience of representation, but they all represent components with the same or similar structures or functions. Description of the Drawings

[0034] The present invention will be further described below in conjunction with the accompanying drawings:

[0035] Figure 1 is an exploded structural schematic diagram of an embodiment of the spatial atomic layer deposition equipment provided by the present invention;

[0036] Figure 2 is a schematic diagram of the principle structure of the spatial atomic layer deposition equipment provided by the present invention;

[0037] Figure 3 is a schematic diagram of the connection structure between the spraying module and the reaction chamber provided by the present invention;

[0038] Figure 4 is a schematic diagram of an embodiment of the spatial atomic layer deposition equipment provided by the present invention;

[0039] Figure 5 is a structural schematic diagram of an embodiment of the spatial atomic layer deposition equipment provided by the present invention;

[0040] Figure 6 is an exploded structural schematic diagram of an embodiment of the spatial atomic layer deposition equipment provided by the present invention;

[0041] Figure 7 is the gas distribution diagram of the simulation of the spraying module provided by the present invention.

[0042] Description of the Reference Numerals

[0043] 1: Spatial atomic layer deposition equipment; 2: Carrier tray transfer device; 3: Spraying module; 4: Carrier tray; 5: Heating module; 6: Gas supply system; 7: Vacuum system; 8: Upper cavity cover; 9: Cavity cover opening and closing mechanism; 10: Valve system; 1a: Bottom surface; 1c: First transmission hole

[0044] 2a: Active transfer device; 2b: Driven transfer device; 2c: Motor; 2d: Transmission rod

[0045] 21: Transmission body; 22: Synchronous belt; 23: Auxiliary transmission part;

[0046] 210: Synchronous pulley; 212: Sealing magnetic fluid; 213: Transmission shaft;

[0047] 213a: Extension portion; 213b: Limiting portion; 213c: Carrier plate contact portion

[0048] 31: Limiting rod; 32: Adjusting mechanism; 33: Mounting notch; 34: Intake module; 35: First limiting hole; 3a: First precursor gas hole; 3b: Second precursor gas hole; 3c: Isolation gas hole

[0049] 41: Accommodating hole; 42: Reinforcing rib; 51: Heating element; 52: Heat insulation plate; 52a: Heat insulation plate notch; 53: Limiting fixing hole

[0050] 7a: Vacuum pipeline; 7a1: Exhaust port

[0051] 10a: Carrier plate inlet; 10b: Carrier plate outlet

[0052] 11: Baffle; 111: Groove; 112: Reinforcing structure Detailed implementation manners

[0053] The embodiments of the present invention will be described in detail below. Examples of the embodiments are shown in the drawings, where the same or similar reference numerals denote the same or similar elements or elements with the same or similar functions throughout. Based on the embodiments in the implementation manners, it is intended to explain the present invention and should not be construed as a limitation to the present invention.

[0054] As used herein, the phrase "in one embodiment" or "example" or "instance" means that a particular feature, structure, or characteristic described in connection with the embodiment itself can be included in at least one embodiment of the present disclosure. The appearances of the phrase "in one embodiment" in various places in the specification do not necessarily refer to the same embodiment.

[0055] In the evaporation coating process, it is necessary to heat the evaporation source to vaporize the evaporation source. Affected by thermal expansion and contraction, the gas will rise. Therefore, in the evaporation coating chamber, the evaporation source is usually arranged below the chamber, and the substrate is arranged above the chamber. The rising gas solidifies when it encounters the substrate, forming a film layer.

[0056] In the atomic layer deposition process, the gaseous process gas is directly sprayed into the chamber through spraying, and is deposited on the substrate under the action of the spraying pressure and the gravity of the gas. Therefore, in the atomic layer deposition process, the substrate is usually arranged below the chamber, and the gas spraying module for spraying the gas is arranged above the chamber.

[0057] With the increase in the types of semiconductor devices, there is a situation where the previous film layer is prepared by the evaporation coating process and the subsequent film layer is prepared by the atomic layer deposition process.

[0058] For example, in a perovskite solar cell, the electron transport layer includes a stacked C60 and SnO2 film layer, where the C60 is prepared by an evaporation process and the SnO2 layer is prepared by an atomic layer deposition process. After the C60 layer is prepared by the evaporation process in the evaporation chamber, it is necessary to break the vacuum and take out the carrier from the evaporation chamber and put it into the transfer-out chamber. After the transfer-out chamber breaks the vacuum, the carrier is taken out from the transfer-out chamber. After manual wafer flipping, the carrier is transferred into the atomic layer deposition loading chamber, and then the vacuum is pumped. After the vacuum degrees of the loading chamber and the atomic layer deposition chamber are the same, the carrier is transferred into the atomic layer deposition chamber for atomic layer deposition. On the one hand, this coating method will result in an additional breakage of vacuum and pumping of vacuum when transferring from evaporation to the atomic layer deposition chamber, thus resulting in a long production time and low efficiency. On the other hand, after the C60 is evaporated on the substrate and taken out from the evaporation equipment, manual wafer flipping is required to perform atomic layer deposition, which will cause particle contamination and inconvenience of manual operation. Moreover, due to the difference in coating above and below, these two coating devices cannot be integrated together to achieve continuous vacuum coating.

[0059] Due to the particularity of the evaporation equipment, specifically, after the evaporation material is heated and evaporated, it naturally evaporates upward, so its evaporation direction is also from bottom to top. This requires that the evaporation port of the evaporation source must be set upward. Otherwise, affected by gravity, the evaporation material will flow out of the evaporation crucible. However, if in order to adapt evaporation to atomic layer deposition, the evaporation source is set at the top of the evaporation chamber to evaporate the upper surface of the substrate, then a special pipeline direction needs to be set additionally, that is, the beam is made to change direction in the pipeline through the pipeline to complete the downward evaporation of the evaporation material, so as to coat the upper surface of the substrate; or, a special-shaped crucible is used, and the outlet of the special-shaped crucible is set downward through a specific processing method. These two methods will make the structure of the evaporation equipment extremely complex and difficult to implement. At the same time, the equipment processing and use costs will increase sharply. In addition, the evaporation material is likely to deposit on the inner wall of the pipeline in a special direction or the special-shaped crucible, resulting in a large waste of the evaporation material. The material deposited on the inner wall of the pipeline or crucible is difficult to remove, and the residual evaporation material in the pipeline will also limit the evaporation equipment to be used only for the evaporation of a single material and cannot add other evaporation materials, otherwise it will cause cross-contamination of materials. In addition, the pipeline and the special-shaped crucible will significantly affect the evaporation beam, reduce the evaporation efficiency, thus reducing the overall efficiency of continuous coating. At the same time, the evaporation method from top to bottom will additionally generate particle contamination on the substrate surface, which is not conducive to improving the film layer quality.

[0060] In view of this, the present application has pioneered an atomic layer deposition method from bottom to top (hereinafter referred to as bottom coating). Since the atomic layer deposition has a spraying structure, the reaction gas can be ejected from the air outlet with a certain ejection pressure. Therefore, the spraying module is arranged at the bottom of the reaction chamber, and the reaction gas sprays upward on the substrate. The spraying pressure can overcome the gravity of the reaction gas itself, so as to obtain the same deposition effect as the traditional atomic layer deposition method from top to bottom. And because the cavity structure of the atomic layer deposition changes to spraying from bottom to top, the atomic layer deposition equipment can be connected to the evaporation equipment through a transfer valve. There is no need to set up an additional transfer chamber and a transfer-in chamber between the two chambers, nor is it necessary to add feeding and discharging devices. Therefore, after the perovskite battery substrate is evaporated with C60, the carrier tray can be directly entered into the atomic layer reaction chamber from the evaporation chamber through the transfer valve without evacuating the carrier tray from the transfer chamber, and without transferring the carrier tray into the transfer-in chamber to complete the SnO2 coating on the lower surface. In this step, there is no need for additional evacuation and no additional wafer flipping treatment. After the deposition is completed, the substrate is taken out to obtain a perovskite substrate continuously deposited with C60 and SnO2. This deposition method reduces the number of evacuations, reduces the evacuation time, and does not require wafer flipping, and can realize continuous vacuum coating, improving the production efficiency.

[0061] In addition, since the atomic layer reaction chamber for depositing on the lower surface of the present invention deposits a film on the lower surface of the substrate, it can be fully adapted to the evaporation structure of the previous evaporation chamber. Without improving the evaporation chamber, continuous coating can be realized in a vacuum state. After the lower surface of the substrate is evaporated with C60, it is introduced into the atomic layer deposition chamber through the carrier tray, and the spraying module further sprays and deposits on the C60 layer on the lower surface of the substrate. Even if particle contamination occurs, it will quickly fall to the bottom surface of the chamber under the action of gravity and will not contaminate the lower surface of the substrate, so as not to affect the evaporated film layer.

[0062] However, the atomic layer deposition equipment of the present application is not limited to depositing SnO2, and can also be other metal oxides. The evaporation is not limited to C60, nor is it limited to the evaporation equipment. Any coating or deposition method from bottom to top of the front and back coating equipment can be adapted to the atomic layer deposition equipment of the present application to realize continuous vacuum coating.

[0063] Atomic layer deposition (ALD) technology is an advanced thin film deposition technology. By separately introducing two or more chemical gas precursors into the reaction chamber, each precursor undergoes a fully saturated surface chemical reaction on the substrate surface respectively, so that the substance is deposited on the substrate surface in the form of a single atomic layer, and the thickness and uniformity of the deposited thin film can be precisely controlled. This technology can form high-quality, pinhole-free, conformal thin films on non-planar complex structures and three-dimensional structure surfaces, and has been widely used in the manufacturing fields such as semiconductors and photovoltaic cells.

[0064] At present, in the industry, the spatial ALD deposition equipment usually adopts a structure in which a spray module is installed on the chamber cover above the substrate, a heating module is installed inside the chamber below the substrate, and the substrate is placed between the spray plate and the heating module.

[0065] Through research by the inventors of the present application, it is found that although this structure can complete thin film deposition, since ALD is a saturation coating method, there will be residual reaction dust left on the surface of the thin film, and the inert gas cannot completely blow the dust off the surface, resulting in the dust affecting the film formation quality and uniformity when depositing the lower layer film. In addition, it is also found that the heating module is located inside the chamber, and the space is limited. To avoid transmission components, the overall wrapping of the heating module around the substrate is poor, and due to the edge effect, it will affect the thermal uniformity of the substrate, thereby affecting the uniformity of the thin film. Moreover, for existing thin film preparation equipment other than ALD, coating is generally carried out on the lower surface. Currently, when ALD is connected to the front and back processes, it is necessary to flip the substrate. For large-area thin film preparation equipment, it is not easy to flip the substrate inside the chamber, and this flipping action inevitably has to be completed outside the equipment. Therefore, the substrate will be exposed to the air, and there is a risk of the substrate being contaminated.

[0066] Therefore, the present invention discloses a spatial atomic layer deposition equipment 1, as Figures 1 to 6 shown. The spatial atomic layer deposition equipment 1 includes:

[0067] A reaction chamber, the reaction chamber includes a first side wall and a second side wall. A carrier plate inlet 10a is provided on the first side wall, and a carrier plate outlet 10b is provided on the second side wall. The carrier plate carrying the substrate can enter the interior of the reaction chamber through the carrier plate inlet 10a, and can pass through the carrier plate outlet 10b and leave the reaction chamber;

[0068] A spray module 3, the spray module 3 includes an air outlet surface, and a plurality of air outlet holes are formed on the air outlet surface. The spray module 3 is arranged at the bottom of the reaction chamber, and the air outlet surface faces the top of the reaction chamber;

[0069] A carrier plate transmission device 2, the carrier plate transmission device 2 is used to drive the carrier plate to translate in the reaction chamber so that the surface of the substrate to be deposited faces the air outlet surface.

[0070] The spatial atomic layer deposition equipment 1 of the present application has the characteristics of low particle contamination, simple operation, and high production efficiency, and the deposited film layer has higher quality. The spraying module 3 is arranged at the bottom of the reaction chamber, so that the gas outlet surface of the spraying module 3 sprays the reaction gas upward through the air holes. During the transmission of the substrate carried by the carrier plate, the spraying gas sprays the lower surface of the substrate in a relatively scanning manner to deposit and form a film layer, realizing the atomic layer coating process from bottom to top. While the deposition quality is higher, it can also reduce the contamination of the film layer by particles, polymers, etc. in the cavity, and the upward deposition coating can adapt to the operation modes of other coating equipment in the existing production line, enabling integrated coating, reducing the number of cleaning times, lowering the evacuation frequency, and eliminating the need for additional wafer flipping treatment, greatly improving the production efficiency and operation simplicity, and reducing the labor cost.

[0071] The atomic layer deposition of the present application is a pioneering coating method from bottom to top (hereinafter referred to as bottom coating). Due to various issues such as the complex structure and stability of the equipment, atomic layer deposition from bottom to top has never appeared in the prior art. This is a special thin film deposition technology. Compared with the traditional coating method from top to bottom (hereinafter referred to as top coating), during the spraying and scanning deposition process of bottom coating, the thickness of each layer can be very precisely controlled. Specifically, in addition to the spraying pressure, the sprayed gas is also affected by its own gravity, etc. Since the gas of the spatial atomic layer deposition is continuously sprayed, this will cause some particles or non-ideal polymerization products to be generated during spraying. These products will fall onto the upper surface of the substrate during top coating, and a very small amount will be exhausted by the exhaust system. When these products are on the substrate surface, on the one hand, they hinder gas deposition, resulting in a decrease in the film thickness here, and on the other hand, they form film defects, reducing the film quality. While during bottom coating, the particles and polymers generated will partly fall to the bottom of the cavity due to gravity and be exhausted by the exhaust when sprayed upward, and the other part cannot stably adhere even if it reaches the surface and will soon be exhausted by the pumping, which further improves the uniformity of the film thickness and the deposition quality.

[0072] On the other hand, in atomic layer deposition, each reactant reacts with the surface in a self-limiting manner: the reactant atoms can only react with a limited number of reaction sites on the substrate surface to form a film with atomic thickness. Although the spatial movement mode in the upper coating has an isolation air curtain that can blow away the remaining reactants of precursor A, even if part of A is blown away, if the A in the air cannot be discharged or evacuated in time, or the relative movement speed between the isolation air curtain and the carrier plate is too fast, a certain amount of the remaining precursor A reactants will still fall onto the substrate surface to some extent. This causes, during the reaction of precursor B with the surface, this part of the remaining reactants to affect the bonding reaction of the substrate with B at this position, thereby leading to film differences. However, this problem is greatly reduced in the lower coating because when the lower coating blows away the remaining reactants of A with the isolation gas, even if there are remaining reactants that are not evacuated in time and exist in the air, they will not further fall onto the substrate surface, thus not affecting the further bonding reaction of B, so as to improve the film uniformity quality.

[0073] In addition, since the spraying gas will quickly fall to the bottom of the cavity and be evacuated after spraying upward, the residence time of the polymer in the reaction cavity of the lower coating is shorter than that of the upper coating. In the upper coating, the polymer is likely to adhere to the cavity wall and the cavity cover, which requires the equipment to be frequently opened for cleaning, increasing the maintenance frequency and labor costs. The lower coating can reduce the polymer adhesion problem, thereby shortening the maintenance cycle and improving the production efficiency.

[0074] The spraying module 3 of this application is not simply a random replacement of the spraying module 3. It also involves the installation and connection of the spraying module 3 to the chamber, and the structures and positions of other components also need to be adjusted accordingly. Specifically, in the traditional upper coating process, the gas is sprayed from top to bottom, and the exhaust pipe and the exhaust port are generally set at the side wall or the bottom of the chamber. This results in less gas extraction from the reaction gas sprayed from above by the exhaust pipe, which will cause the number of gas molecules in the chamber to increase. On the one hand, it will increase the lateral diffusion length of different precursor gases, causing the mixed gas to be unable to form a self-limiting single precursor adsorption and atomic deposition reaction (more likely to form chemical reaction deposition). On the other hand, more reaction gases remain and cannot be evacuated in the chamber, increasing the chamber pressure. The increase in chamber pressure will further cause difficulties in the decomposition and dissociation of precursor gases, reducing the reaction efficiency, and the residual gases react and polymerize with each other, further increasing the possibility of polymer contamination and adhesion to the chamber wall in the chamber.

[0075] However, the above problems can be solved in the lower coating of the present invention. This is because during the lower coating process, the gas is sprayed from bottom to top, and the exhaust pipe and exhaust port can more easily extract the gas ejected from below. The extraction volume will be relatively larger than that of the upper coating. Therefore, the number of gas molecules in the chamber is smaller, which helps to reduce the lateral diffusion length of the precursor, reduces the possibility of gas mixing between different gas sources, greatly improves the efficiency of the self-limiting atomic layer deposition reaction, and the increase in the extraction volume results in a smaller chamber pressure, which can reduce the gas-phase reaction and ensure that the deposition mainly occurs on the substrate surface. This makes the film thickness more uniform, and the low pressure is also beneficial to the desorption of by-product molecules from the substrate surface, making room for more precursor molecules. This is crucial for maintaining a continuous and efficient deposition process. Preferably, during the lower coating operation of the present invention, the chamber pressure is in the range of 1 mbar to 5 mbar, while during the traditional upper coating operation, the chamber pressure is generally greater than 5 mbar.

[0076] Figure 7 It is a gas distribution diagram obtained by simulating the gas flow at the air outlet holes during the spraying of the spraying module of the present application using the ANSYS Fluent simulation software. The abscissa represents the positions of different precursor gas outlet holes, and the ordinate represents the gas outlet pressure distribution between the first precursor gas hole and the second precursor gas hole. Among them, the first precursor gas is tin bis(dimethylamide), and the second precursor gas is H2O. Figure 7 It can be seen that after the precursor gas is ejected from the outlet hole, the gas will show a "flare-shaped" diffusion, and the isolation gas holes will isolate the diffusion between adjacent precursor gases. However, as the distance between the carrier plate and the spraying module increases and the film-forming gap becomes larger, the isolation effect of the isolation gas holes will weaken, resulting in signs of mixing between the precursors. It is crucial to select an appropriate spraying distance according to the diffusion characteristics of different precursors.

[0077] The spray module of this application is not simply swapped up and down. If only the position is changed from the upper side to the lower side, but the spray spacing remains unchanged (the spacing between the spray module and the carrier), it will cause a change in the gas flow field between the lower spray module and the carrier, which cannot form an effective atomic layer deposition reaction. When the spacing is too large, the isolation function of the isolation gas is insufficient, and a reaction accompanied by CVD occurs, rather than only a self-limiting atomic layer deposition reaction. As the spacing between the carrier and the nozzle decreases, the sealing effect between the precursors will improve, but a spacing less than 1 mm is difficult to achieve in terms of processing difficulty. To further improve the reaction efficiency during atomic layer deposition, in the atomic layer deposition equipment of this application, the interval between the spray module and the carrier is set within the range of 2 mm to 10 mm. The following Table 1 shows the simulation data of the interval between the carrier and the spray module in the lower coating atomic layer deposition equipment of this application. The simulation is carried out using the ANSYS Fluent simulation software. TDMASn represents that the first precursor gas source is tetrakis(dimethylamino)tin, and H2O represents that the second precursor gas source is water. The distribution length (D) represents the lateral diffusion length of the corresponding precursor gas source on the lower surface of the substrate during spraying. The formula for self-limitation (δ) is:

[0078] δ = (1 - ((D - d1) / d1)) * 100%

[0079] Among them, δ is the self-limitation, D is the distribution length, and d1 is the spacing between adjacent pores of different precursors. The self-limitation in Table 1 is calculated based on the assumption that the d1 spacing is set to 40 mm. It should be noted that after the precursor gas is ejected from the pores, the gas will show a "flare-shaped" diffusion. The distribution length refers to the lateral diffusion length of a single precursor gas during spraying on the lower surface of the substrate. Generally, the larger the distribution length, the greater the diffusion distance of the precursor "flare". If the distribution length is greater than the spacing between the pores, it is easier for adjacent precursor gases to diffuse and cross-mix, resulting in a poor isolation effect, so that a pure single reaction cannot occur within each cycle of the atomic layer; while the smaller the distribution length, the smaller the diffusion distance of the precursor, the smaller the "flare" angle of the spraying gas, and it is more inclined to a shape that is almost perpendicular to the spraying, so that adjacent precursors do not interfere with each other and are not easily mixed, and thus a single reaction is more likely to occur in atomic layer deposition, and the atomic layer deposition effect is better. The self-limitation is calculated based on the distribution length and the pore spacing. It represents the degree to which atomic layer deposition can occur as a single reaction according to the simulated distribution length when the pore spacing is not fixed. The larger the self-limitation, the smaller the ratio of the distribution length to the pore spacing, and it is not easy for adjacent precursor gases to mix; the smaller the self-limitation, the larger the ratio of the distribution length to the pore spacing, and it is easier for adjacent precursor gases to mix.

[0080] Table 1

[0081]

[0082] As can be obtained from Table 1, when the spray spacing is 2 mm, the distribution length of the first precursor gas, namely tetrakis(dimethylamino)tin, is 53.67 mm, and the distribution length of the second precursor gas (H2O) is 39.98 mm. If the set interval between the outlet holes of the two precursor gases is 40 mm, the calculated self-limiting properties are 65.82% and 100% respectively. It can be shown that at a spacing of 2 mm, an atomic layer deposition effect with a higher self-limiting property can be obtained (rather than an ordinary CVD reaction); when the spray spacing is 10 mm, the distribution length of tetrakis(dimethylamino)tin is 70.21 mm, and the distribution length of the second precursor gas is 51.47 mm. Then the calculated self-limiting properties are 24.47% and 71.32% respectively. Tetrakis(dimethylamino)tin is more likely to diffuse laterally, its corresponding self-limiting property decreases, there is gas mixing, the atomic layer deposition effect decreases, and the chemical reaction deposition effect increases. When the spacing is 11 mm, the distribution lengths of the first precursor gas and the second precursor gas both exceed the spacing of 40 mm between adjacent outlet holes, the self-limiting property is 0, the isolation gas loses its isolation function, and the chamber completely turns into a chemical vapor deposition reaction.

[0083] Different from the spray spacing and gas interval in traditional coating, in the above scheme with a spray spacing of 2 mm - 10 mm, the present application adjusts the interval between the outlet holes. The interval between the outlet holes of adjacent different precursors of the spray module is between 16 mm and 80 mm. The following Table 2 shows the simulation data of the outlet hole interval of the spray module in the lower coating atomic layer deposition equipment of the present application. Among them, the digital item after the first column "-" in Table 2 represents half of the interval between the precursor gas hole corresponding to the previous item and the adjacent different precursor gas hole. For example, "TDMASn - 10 mm" means that the interval between the tetrakis(dimethylamino)tin precursor gas hole and the adjacent H2O precursor gas hole is 20 mm. Another example, "H2O - 20 mm" means that the interval between the H2O precursor gas hole and the tetrakis(dimethylamino)tin precursor gas hole is 40 mm.

[0084] Table 2

[0085]

[0086] As can be seen from Table 2, the spacing between adjacent gas outlet holes of the spraying module determines the diffusion distance of the precursor. When the spacing decreases, that is, the spacing between the gas outlet holes of adjacent different precursors is less than 16 mm, the isolation gas cannot form an effective isolation, and the precursors will converge with each other, that is, the distribution length becomes longer and is longer than the spacing between the gas outlet holes, and the self-limiting property decreases to 0. At this time, the chamber is completely transformed into a chemical vapor deposition reaction. When the spacing between the gas outlet holes of adjacent different precursors is too large, although its self-limiting property can be significantly improved, it will waste the chamber space and affect the production efficiency.

[0087] This application does not make special limitations on the spacing of the isolation gas holes. In the solution of the spraying module for lower coating, generally, the precursor gas will not easily diffuse laterally. Preferably, the isolation gas holes are arranged near the precursor gas holes with a larger distribution length to effectively isolate its distribution. In some embodiments, the spacing between the isolation gas holes and the first precursor gas holes is between 10 mm and 30 mm.

[0088] As an alternative implementation manner, the first side wall and the second side wall are arranged opposite to each other, so that the carrier plate inlet 10a and the carrier plate outlet 10b are opposite to each other, which is convenient for the carrier plate to perform linear reciprocating transmission in the chamber.

[0089] The spatial atomic layer deposition equipment of this application further includes a gas supply system 6. The gas supply system includes a gas source and a spraying module 3. The gas source is used to supply gas to the spraying module. The spraying module includes gas outlet holes. The gas outlet holes include a plurality of first precursor gas holes 3a, a plurality of second precursor gas holes 3b, and a plurality of isolation gas holes 3c. The first precursor gas holes and the second precursor gas holes are arranged alternately along the length direction of the reaction chamber. An isolator hole is arranged between adjacent first precursor gas holes and second precursor gas holes, so that the first precursor gas and the second precursor gas are isolated by the isolation gas. The spraying module of this application further includes an air inlet module 34, and the gas source supplies gas to each gas outlet hole through the air inlet module.

[0090] The reaction chamber of the present application further includes a third side wall and a fourth side wall, which are oppositely arranged. The carrier tray transfer device 2 includes an active transfer device 2a and a driven transfer device 2b. A plurality of first transmission holes 1c are arranged on the third side wall along the transfer direction, and a plurality of second transmission holes are arranged on the fourth side wall along the transfer direction. The active transfer device 2a is arranged on the third side wall through the first transmission holes 1c, and the driven transfer device 2b is arranged on the fourth side wall through the second transmission holes. The active transfer device 2a and the driven transfer device 2b are used to carry and drive the carrier tray to translate in the reaction chamber from both sides of the carrier tray, and the plurality of first transmission holes 1c correspond to the plurality of second transmission holes one by one. In the present application, the carrier tray transfer device 2 is arranged at the side wall position other than the carrier tray inlet and outlet, so that the third side wall and the fourth side wall can provide more installation space for the transfer device. Moreover, the carrier tray transfer device 2 is arranged on both sides of the carrier tray along the transfer direction, and the bearing force is more uniform and balanced, making the carrier tray drive more stable. When the spraying module is arranged at the bottom, the transfer speed affects the residence time of the sample within the precursor concentration range and the deposition efficiency. The transfer speed of the carrier tray or substrate is positively correlated with the precursor concentration. When the carrier gas flow rate is increased, the speed range will increase accordingly, the maximum movement speed under the stable growth rate will increase, but the precursor consumption will increase. Therefore, a reasonable process combination has a very important impact on improving production efficiency and reducing consumption. Table 3 below shows the gas distribution length, self-limiting property, and substrate film thickness data corresponding to different transfer speeds in the lower coating atomic layer deposition equipment of the present application. The self-limiting property in Table 3 is calculated based on the d1 spacing set to 40 mm, and the film thickness is measured by an ellipsometer.

[0091] Table 3

[0092]

[0093] As can be seen from Table 3, if the transfer speed exceeds 40 m / min, it will cause the carrier tray to transfer too fast, resulting in the reaction gas not having enough time to chemically combine on the substrate surface, unable to grow stably, and the film layer thickness will decrease significantly, thereby reducing the coating efficiency. If the transfer speed is lower than 2 m / min, the deposition efficiency of the spatial atomic layer deposition will be reduced, and excessive reaction gas will also be wasted and discharged without being effectively utilized. When the transfer speed changes, the distribution length and self-limiting property do not change significantly, but the film thickness changes significantly. When the transfer speed is 10 m / min, the film thickness reaches 7.222 nm in one transfer cycle, and when the transfer speed increases to 40 m / min, the film thickness in one transfer cycle drops to 3.5228 nm. Preferably, the transfer speed is between 2 m / min and 40 m / min, the deposited film thickness of the substrate is appropriate, and the deposition efficiency is more ideal.

[0094] In order to ensure the stability of the carrier tray by driving both sides of the carrier tray at the same speed, as an alternative implementation, the present application connects the active transmission device 2a to the motor 2c through electrode drive. The active transmission device 2a drives the driven transmission device 2b through the transmission rod 2d to achieve synchronous transmission. It is also possible to adopt an independent transmission method on both sides so that the speeds match.

[0095] To further improve the transmission effect, enhance the synchronous transmission performance, and ensure the stability of the transmission speed within a set time, preferably, both the active transmission device 2a and the driven transmission device 2b include a plurality of transmission bodies 21, a plurality of synchronous belts 22, and a plurality of auxiliary transmission members 23. The plurality of transmission bodies 21 are arranged at intervals along the transmission direction, and auxiliary transmission members 23 are arranged between adjacent transmission bodies 21. Any adjacent transmission body 21 and the auxiliary transmission member 23 therebetween are sleeved and connected by a synchronous belt 22 so that the plurality of transmission bodies 21 can be synchronously transmitted. Among them, the auxiliary transmission member 23 has a tensioning effect and can adjust the tension force between the synchronous belt 22 and the transmission body 21 to achieve the best synchronous effect.

[0096] It can be understood that in order to ensure the synchronous transmission on both sides, the driven transmission device 2b has the same structure as the active transmission device 2a, that is, the driven transmission device 2b also includes a plurality of transmission bodies 21, synchronous belts 22, and auxiliary transmission members 23, and the positions of the driven transmission device 2b correspond one by one to those of the active transmission device 2a.

[0097] The present application does not make special limitations on how the carrier tray transmission device 2 carries and drives the carrier tray. For example, it can be in the form of a transmission belt or a transmission roller. As an alternative implementation, the transmission body 21 is inserted into the first transmission hole 1c or the second transmission hole to form a transmission shaft 213, and a plurality of transmission shafts 213 can rotate in the same direction to carry and drive the carrier tray.

[0098] As an alternative implementation, the transmission body 21 of the present application includes the above-mentioned transmission shaft 213, a synchronous pulley 210, and a sealed magnetic fluid 212. The synchronous pulley 210 is used to connect the synchronous belt 22 so that adjacent transmission bodies 21 achieve synchronous transmission speed through the synchronous pulley 210 and the synchronous belt 22, and the synchronous pulley 210 can also drive the transmission shaft 213 to rotate synchronously. The sealed magnetic fluid 212 is used to seal the transmission hole, and other sealing structures can also be used, such as mechanical seals (elastic sealing rings, etc.).

[0099] This application does not make special limitations on how the drive shaft 213 carries and transports the carrier. It can be simply placing the carrier on the drive shaft 213 and driving the carrier through the rotation of multiple drive shafts 213 with friction, or connecting the drive shaft 213 to a conveyor belt and placing the carrier on the conveyor belt to achieve transmission. As an alternative embodiment, the drive shaft 213 includes an extension portion 213a, a carrier contact portion 213c, and a limiting portion 213b. The extension portion 213a, the carrier contact portion 213c, and the limiting portion 213b are arranged and connected along the axial direction of the drive shaft 213. The limiting portion 213b is arranged between the extension portion 213a and the carrier contact portion 213c. The carrier contact portion 213c is used to carry and drive the carrier. The outer diameter of the limiting portion 213b is larger than the outer diameter of the carrier contact portion 213c, so that the limiting portion 213b limits the carrier in the width direction.

[0100] Since the spray module 3 of this application is arranged below the carrier for bottom coating, in order to make the spray module 3 close enough to the carrier for spraying while ensuring that the installation of the spray module 3 does not affect the transmission of the carrier by the drive shaft 213, the spray module 3 is provided with a plurality of installation notches 33 at the edges close to the third side wall and the fourth side wall. The plurality of installation notches 33 are arranged at intervals along the transmission direction. The plurality of installation notches 33 correspond to the plurality of drive shafts 213. The shape of the installation notch 33 matches the drive shaft 213, so that there is an interval between the spray module 3 and the adjacent plurality of drive shafts 213. This enables the drive shaft 213 not to touch the spray module 3 when rotating, and at the same time, the interval position can also allow the excess reactant gas during deposition to enter the bottom of the chamber from the interval and be evacuated.

[0101] In order to reduce the adhesion of polymers to the chamber wall, the atomic layer deposition equipment further includes baffles 11 arranged opposite to each other along the width direction of the reaction chamber. The baffles 11 are arranged between the spray module 3 and the side wall of the reaction chamber. The baffles 11 and the side wall enclose the spray module 3. The baffles 11 can adsorb the adhesion of excess reactants, and the baffles 11 are arranged between the spray module 3 and the side wall, so that the excess reactants preferentially adhere to the side wall of the baffles 11. In this way, when opening the chamber for cleaning and maintenance, only the baffles 11 need to be cleaned without disassembling and cleaning the chamber wall.

[0102] In order to ensure that the baffle 11 does not interfere with the structure of the rotating shaft, preferably, the baffle 11 is located below the drive shaft 213. The baffle 11 includes a plurality of grooves 111 arranged along the length direction. The plurality of grooves 111 correspond to the plurality of drive shafts 213 one by one. The shape of the groove 111 matches the drive shaft 213, so that in the axial direction of the drive shaft 213, the groove 111 can accommodate a part of the drive shaft 213.

[0103] The baffle 11 includes a plurality of reinforcing structures 112. The plurality of reinforcing structures 112 are arranged at intervals along the transmission direction. The reinforcing structure 112 includes a connecting portion and a fixing portion. The connecting portion is arranged on the side wall of the baffle 11. The fixing portion supports and fixes the baffle 11 through the connecting portion. The baffle 11 is fixedly connected to the bottom surface 1a of the reaction chamber through the fixing portion.

[0104] This application does not make special limitations on how the spraying module 3 is arranged at the bottom of the reaction chamber, as long as it satisfies spraying from the bottom to the top. For example, it can be simply placed on the bottom surface 1a of the chamber. For another example, it can also be detachably installed and fixed at the bottom of the cavity through bolts, buckles, etc. Considering that the spraying module 3 needs to be regularly cleaned, maintained, and replaced, a certain disassembly structure is required. At the same time, the atomic layer deposition equipment is stationary during operation and will not be disturbed by the transmission structure and cause disturbance. Therefore, preferably, the spraying module 3 further includes a plurality of supporting and limiting members. The supporting and limiting members are arranged between the spraying module 3 and the bottom of the reaction chamber, used to support the spraying module 3 and make a set interval exist between the spraying module 3 and the carrier plate. Preferably, the set interval is between 2 mm and 10 mm.

[0105] In some embodiments, because the spraying module 3 is affected by the temperature inside the chamber, and generally the deposition temperature is relatively high. In order to prevent the spraying module 3 from thermally deforming and causing a change in its position relative to the cavity, the supporting and limiting members include a plurality of limiting rods 31. The spraying module 3 includes a plurality of first limiting holes 35. The first end of the limiting rod 31 is fixedly connected to the bottom of the reaction chamber, and the second end of the limiting rod 31 is movably connected to the spraying module 3 through the first limiting hole 35, so that the first limiting hole 35 limits the spraying module 3 to prevent the spraying module 3 from moving laterally, and at the same time provides a part of the thermal deformation space to avoid thermal stress and improve the service life of the spraying module 3.

[0106] In some embodiments, the supporting and limiting members further include a plurality of adjusting mechanisms 32. The two ends of the adjusting mechanism 32 are respectively fixedly connected to the bottom of the reaction chamber and the spraying module 3. The adjusting structure is used to adjust the distance between the spraying module 3 and the carrier plate.

[0107] In some embodiments, the spatial atomic layer deposition equipment 1 further includes a carrier plate. The carrier plate is carried by the carrier plate transmission device 2. A plurality of accommodating holes 41 are formed on the carrier plate. The plurality of accommodating holes 41 are arranged in multiple rows and columns along the transmission direction. The accommodating holes 41 are formed with a stepped structure in the thickness direction of the carrier plate. The stepped structure has a substrate bearing surface. The carrier plate bears the substrate through the substrate bearing surface. Since the carrier plate needs to bear the substrate, it needs to have a certain strength, but the deposition requires the carrier plate to be thin enough. Preferably, reinforcing ribs 42 are arranged in the middle of the carrier plate.

[0108] Another innovative point of the present application is that the spatial atomic layer deposition equipment 1 further includes an upper cavity cover 8 and a heating module 5. The upper cavity cover 8 is used to close the reaction chamber from the top of the reaction chamber, and the heating module 5 is arranged on the upper cavity cover 8. In the prior art, the heating module 5 is arranged at the bottom of the cavity and heats from the bottom to the top (referred to as bottom heating). In the present application, it is a top heating mode. In the present invention, the heating module 5 is installed on the cavity cover, which can avoid interference with the transmission system, make the heating module 5 as large as possible, increase the coverage area of the substrate, and reduce edge heat dissipation.

[0109] In order to increase the heat radiation area and at the same time reduce the thermal deformation effect caused by heating, preferably, the heating module 5 includes a plurality of heating elements 51 and a plurality of heating plates. The plurality of heating elements 51 are fixedly connected to the upper cavity cover 8 and the heating plates. The heating elements 51 are used to transfer electrical energy from the outside into the reaction chamber to heat the heating plates, and the plurality of heating plates are arranged along the transmission direction. Preferably, the distance between the heating plate and the carrier plate is between 5 mm and 9 mm to achieve the best heating effect.

[0110] In order to make the heating temperature more uniform at various positions in the cavity, preferably, the plurality of heating plates include an intermediate heating plate and edge heating plates. The size of the intermediate heating plate along the transmission direction is larger than the size of the edge heating plates along the transmission direction. Preferably, the length of the intermediate heating plate is between 1500 mm and 2500 mm, the length of the edge heating plates is between 100 mm and 500 mm, and the sizes of the intermediate heating plate and the edge heating plates in the width direction of the reaction chamber are both between 1000 mm and 1500 mm.

[0111] The heating plates are generally metal plates with good thermal conductivity and are prone to thermal deformation when the temperature rises, and are more likely to be affected by thermal deformation at the fixed connection with the cavity cover. In order to reduce the influence of thermal deformation of the heating plates, preferably, a plurality of limiting and fixing holes 53 are provided on the plurality of heating plates, and the heating module further includes fasteners. The fasteners pass through the limiting and fixing holes and are fixedly connected to the upper cavity cover, so that the heating plates are fixedly connected to the upper cavity cover. The plurality of limiting and fixing holes 53 are arranged along the edge of the heating plate, and the plurality of limiting and fixing holes 53 have a limiting space in the transmission direction and / or the width direction of the reaction chamber.

[0112] The spatial atomic layer deposition equipment of the present application further includes a heat insulation plate 52. The heat insulation plate 52 is arranged between the heating plate and the upper cavity cover 8, and the periphery of the heating plate is also surrounded by the heat insulation plate 52 to reduce unnecessary heat consumption, thereby ensuring the thermal uniformity of the substrate. Preferably, the four side walls on the outside of the heat insulation plate 52 all have heat insulation plate notches 52a, and the heat insulation plate notches 52a correspond to the positions of the transmission shafts 213. When the upper cavity cover 8 is closed by the cavity cover opening and closing mechanism 9, the heat insulation plate notches 52a just allow the transmission shafts 213 to pass through, so that the heat insulation plate 52 does not hinder the transmission of the carrier plate by the transmission shafts 213.

[0113] The spatial atomic layer deposition equipment further includes a vacuum system 7. The vacuum system 7 includes a plurality of vacuum pipelines 7a. The vacuum pipelines 7a are arranged on the lower side of the spraying module 3 in the reaction chamber. The plurality of vacuum pipelines 7a are arranged at intervals along the transmission direction. The vacuum pipeline 7a includes a plurality of exhaust ports 7a1, so that the gas discharged from the spraying module 3 is discharged from the lower side through the exhaust ports 7a1.

[0114] The spatial atomic layer deposition equipment 1 further includes a valve system 10. The valve system 10 is respectively connected to the carrier plate inlet 10a and the carrier plate outlet 10b. The carrier plate inlet 10a and the carrier plate outlet 10b are also provided with a plurality of fixed mounting counterbores for fixedly connecting with the valve system 10.

[0115] In this application, no special limitation is imposed on the film layer deposited by the spatial atomic layer deposition equipment 1. For example, it can be an electron transport layer of perovskite, such as metal oxides like SnO2, Al2O3, TiO2, MoO3, V2O5, etc. Then the corresponding substrate is a silicon wafer, and the substrate can also be ordinary glass or an ITO substrate.

[0116] In some embodiments, a perovskite solar cell includes a crystalline silicon cell at the bottom, an ITO composite layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, an ITO transparent conductive layer, and a top metal electrode, which are stacked in sequence. Among them, in the process of preparing the electron transport layer, the related art often uses a stacked structure of C60 and SnO2 as the electron transport layer. C60 is mainly prepared by evaporation, while SnO2 is mainly prepared by atomic layer deposition. Currently, the mainstream evaporation method is to set the evaporation source at the bottom and heat the evaporation source to make the internal material evaporate upward and deposit on the lower surface of the substrate, which is a method of bottom coating. Atomic layer deposition is usually that the carrier plate with the substrate enters the chamber, and the spraying module sprays downward to form a film on the upper surface of the substrate. Therefore, these two film types and preparation methods are different. After the C60 is evaporated on the substrate, the substrate needs to be flipped to perform atomic layer deposition, which will cause particle contamination and inconvenience in manual operation. Moreover, due to the difference in up and down coating of these two coating devices, they cannot be integrated together to achieve continuous coating. Therefore, in some embodiments, the present application adopts a bottom coating atomic layer deposition method. Specifically, after the perovskite light-absorbing layer is prepared on the substrate, the substrate is first transferred into the transfer chamber. The transfer chamber, the evaporation chamber, and the atomic layer reaction chamber are evacuated together. Then the substrate is transferred into the evaporation chamber through the carrier plate to start the evaporation of C60 on the lower surface. After the evaporation is completed, it is taken out of the evaporation chamber. In this step, no additional evacuation is required, and no additional substrate flipping treatment is needed. The substrate taken out of the evaporation chamber can be directly transferred into the atomic layer reaction chamber to complete the deposition of SnO2 on the lower surface. After the deposition is completed, the substrate is taken out and transferred to the transfer chamber. After the transfer chamber is evacuated, a perovskite substrate continuously deposited with C60 and SnO2 is obtained. This deposition method reduces the number of evacuations, reduces the evacuation time, and does not require substrate flipping, and can achieve continuous vacuum coating, improving production efficiency.

[0117] This is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes but is not limited to the content described in the drawings and the above specific embodiments. Any modification that does not deviate from the functional and structural principles of the present invention will be included in the scope of the claims.

Claims

1. A spatial atomic layer deposition device, characterized in that, The spatial atomic layer deposition equipment includes: A reaction chamber, which includes a first side wall and a second side wall. A carrier plate inlet (10a) is provided on the first side wall, and a carrier plate outlet (10b) is provided on the second side wall. A carrier plate carrying a substrate can enter the interior of the reaction chamber through the carrier plate inlet, and can pass through the carrier plate outlet and leave the reaction chamber; A spraying module (3), which includes an air outlet surface on which a plurality of air outlet holes are formed. The spraying module is arranged at the bottom of the reaction chamber, and the air outlet surface faces the top of the reaction chamber; A carrier plate transmission device, which is used to drive the carrier plate (4) to translate in the reaction chamber so that the surface of the substrate to be deposited faces the air outlet surface.

2. The spatial atomic layer deposition equipment according to claim 1, characterized in that The first side wall and the second side wall are arranged opposite to each other. The reaction chamber further includes a third side wall and a fourth side wall, and the third side wall and the fourth side wall are arranged opposite to each other. A plurality of first transmission holes are arranged along the transmission direction on the third side wall, and a plurality of second transmission holes are arranged along the transmission direction on the fourth side wall. The carrier plate transmission device includes a main transmission device (2a) and a driven transmission device (2b). The main transmission device and the driven transmission device are used to carry and drive the carrier plate to translate in the reaction chamber from both sides of the carrier plate. The main transmission device is arranged on the third side wall through the first transmission holes, and the driven transmission device is arranged on the fourth side wall through the second transmission holes. The plurality of first transmission holes and the plurality of second transmission holes correspond to each other one by one.

3. The spatial atomic layer deposition equipment according to claim 2, characterized in that The spatial atomic layer deposition equipment further includes a transmission rod, and both ends of the transmission rod are respectively connected to the main transmission device and the driven transmission device. The main transmission device drives the driven transmission device through the transmission rod to achieve synchronous transmission.

4. The spatial atomic layer deposition apparatus according to claim 2, wherein The main transmission device (2a) includes a plurality of transmission bodies (21), a plurality of synchronous belts (22) and a plurality of auxiliary transmission parts (23). The plurality of transmission bodies are arranged at intervals along the transmission direction, and the auxiliary transmission parts are arranged between adjacent transmission bodies. Any adjacent transmission body and the auxiliary transmission part therebetween are sleeved and connected by the synchronous belt so that the plurality of transmission bodies can be synchronously transmitted. The transmission body is inserted into the first transmission hole or the second transmission hole to form a transmission shaft (213), and the plurality of transmission shafts can rotate in the same direction to carry and drive the carrier plate.

5. The spatial atomic layer deposition equipment according to claim 4, characterized in that, The transmission shaft (213) includes an extension part (213a), a carrier plate contact part (213c) and a limiting part (213b). The extension part, the carrier plate contact part and the limiting part are arranged and connected along the axial direction of the transmission shaft. The limiting part is arranged between the extension part and the carrier plate contact part. The carrier plate contact part is used to carry and drive the carrier plate, and the outer diameter of the limiting part is larger than the outer diameter of the carrier plate contact part so that the limiting part limits the carrier plate in the width direction.

6. The spatial atomic layer deposition equipment according to claim 4, wherein The spraying module is provided with a plurality of mounting notches at the edges close to the third side wall and the fourth side wall. The plurality of mounting notches are arranged at intervals in the transmission direction. The plurality of mounting notches correspond to the plurality of transmission shafts one by one. The shape of the mounting notch matches that of the transmission shaft, so that there is a gap between the spraying module and the adjacent plurality of transmission shafts.

7. The spatial atomic layer deposition equipment according to claim 4, characterized in that, The atomic layer deposition equipment further includes baffles (11) oppositely arranged along the width direction of the reaction chamber. The baffles are arranged between the spraying module and the side wall of the reaction chamber. The baffles and the side wall enclose the spraying module. The baffle is located below the transmission shaft. The baffle includes a plurality of grooves (111) arranged along the length direction. The plurality of grooves correspond to the plurality of transmission shafts one by one. The shape of the groove matches that of the transmission shaft, so that in the axial direction of the transmission shaft, the groove can accommodate part of the transmission shaft.

8. The spatial atomic layer deposition apparatus according to claim 7, wherein The baffle includes a plurality of strengthening structures (112). The plurality of strengthening structures are arranged at intervals in the transmission direction. The strengthening structure includes a connecting portion and a fixing portion. The connecting portion is arranged on the side wall of the baffle. The fixing portion supports and fixes the baffle through the connecting portion. The baffle is fixedly connected to the bottom surface of the reaction chamber through the fixing portion.

9. The spatial atomic layer deposition apparatus according to claim 1, wherein, The spraying module further includes a plurality of support and limit members. The support and limit members are arranged between the spraying module and the bottom of the reaction chamber for supporting the spraying module and making a set gap exist between the spraying module and the carrier plate.

10. The spatial atomic layer deposition equipment according to claim 9, characterized in that, The support and limit members include a plurality of limit rods (31) and a plurality of adjusting mechanisms (32). The spraying module includes a plurality of first limit holes. The first end of the limit rod is fixedly connected to the bottom of the reaction chamber. The second end of the limit rod is movably connected to the spraying module through the first limit hole, so that the spraying module is limited through the first limit hole. Both ends of the adjusting mechanism are fixedly connected to the bottom of the reaction chamber and the spraying module respectively. The adjusting structure is used to adjust the distance between the spraying module and the carrier plate.

11. The spatial atomic layer deposition equipment according to claim 9, characterized in that, The set gap is between 2 mm and 10 mm.

12. The spatial atomic layer deposition equipment according to claim 1, characterized in that, The spatial atomic layer deposition equipment further includes a carrier plate (4). The carrier plate is carried by the carrier plate transmission device. A plurality of accommodation holes (41) are formed in the carrier plate. The plurality of accommodation holes are arranged in multiple rows and multiple columns in the transmission direction. The accommodation hole has a stepped structure in the thickness direction of the carrier plate. The stepped structure has a substrate bearing surface. The carrier plate bears the substrate through the substrate bearing surface.

13. The spatial atomic layer deposition equipment according to claim 1, characterized in that, The spatial atomic layer deposition equipment further includes an upper cavity cover (8) and a heating module (5). The upper cavity cover is used to seal the reaction chamber from the top of the reaction chamber. The heating module (5) is arranged on the upper cavity cover.

14. The spatial atomic layer deposition equipment according to claim 13, wherein The heating module includes a plurality of heating elements and a plurality of heating plates. The plurality of heating elements are fixedly connected to the upper cavity cover and the heating plates. The heating elements are used to transfer electric energy from the outside into the reaction chamber to heat the heating plates. The plurality of heating plates are arranged in the transmission direction.

15. The spatial atomic layer deposition equipment according to claim 14, characterized in that, The multiple heating plates include a middle heating plate and edge heating plates, and the dimension of the middle heating plate along the transmission direction is larger than that of the edge heating plates along the transmission direction.

16. The spatial atomic layer deposition apparatus according to claim 14, wherein A plurality of limiting and fixing holes are formed in the heating plates, and the heating module further includes fasteners. The fasteners pass through the limiting and fixing holes and are fixedly connected to the upper cavity cover, so that the heating plates are fixedly connected to the upper cavity cover. The plurality of limiting and fixing holes are arranged along the edges of the heating plates, and the plurality of limiting and fixing holes have a limiting space along the transmission direction and / or the width direction of the reaction chamber.

17. The spatial atomic layer deposition equipment according to any one of claims 1 to 16, characterized in that, The spatial atomic layer deposition equipment further includes a vacuum system (7). The vacuum system includes a plurality of vacuum pipelines (7a). The vacuum pipelines are arranged below the spraying module in the reaction chamber. The plurality of vacuum pipelines are arranged at intervals along the transmission direction. The vacuum pipelines include a plurality of exhaust ports, so that the gas discharged from the spraying module is discharged from below through the exhaust ports.

18. The spatial atomic layer deposition apparatus according to any one of claims 1 to 16, characterized in that, The spatial atomic layer deposition equipment further includes a valve system. The valve system is respectively connected to the carrier plate inlet and the carrier plate outlet. A plurality of fixed installation counterbores are further arranged at the carrier plate inlet and the carrier plate outlet. The fixed installation counterbores are used for fixedly connecting with the valve system.

Images