Continuous coating device and method

Abstract

The invention discloses a continuous coating device, which comprises at least one first coating cavity, the bottom of the first coating cavity is provided with a material source, the first coating cavity comprises a first side wall and a second side wall, the first side wall is provided with a first inlet, and the second side wall is provided with a first outlet; the atomic layer deposition cavity comprises a spraying module arranged at the bottom of the atomic layer deposition cavity, the spraying module comprises a gas outlet surface, the gas outlet surface faces the top of the atomic layer deposition cavity, the atomic layer deposition cavity comprises a third side wall and a fourth side wall, a second inlet is formed in the third side wall, and a second outlet is formed in the fourth side wall; and the conveying device is used for conveying a carrying disc carrying a substrate to sequentially penetrate through the first inlet, the first coating cavity, the first outlet, the second inlet, the atomic layer deposition cavity and the second outlet, and the first outlet and the second inlet correspond to each other and are selectively communicated, so that the first coating cavity and the atomic layer deposition cavity sequentially coat the lower surface of the substrate. The invention discloses a continuous coating method.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a continuous coating production line and method. Background Art

[0002] Semiconductor devices generally include a substrate and multiple layers of patterns or films formed on the substrate. For example, a photovoltaic cell includes an electron transport layer.

[0003] When preparing the electron transport layer, various coating processes such as evaporation, atomic layer deposition and sputtering are often used to prepare nanometer-level film thickness. However, the existing atomic layer deposition process has low production efficiency, and the chamber structures between the various coating processes are also different. This often leads to the problem of mismatch between the front and rear coating processes, resulting in additional processing of the product during the switching of the coating equipment, which reduces production efficiency.

[0004] Therefore, developing and designing a continuous coating device and a continuous coating method to improve production efficiency is an urgent problem to be solved in this field. Summary of the invention

[0005] The present invention aims to solve one of the technical problems in the related art to a certain extent. To this end, the present invention provides a.

[0006] In order to achieve the above object, as a first aspect of the present invention, a continuous coating device is disclosed, the continuous coating device comprising: At least one first coating chamber, a material source is disposed at the bottom of the first coating chamber, the first coating chamber comprises a first side wall and a second side wall, a first inlet is disposed on the first side wall, and a first outlet is disposed on the second side wall; An atomic layer deposition chamber, the atomic layer deposition chamber comprising a spray module, the spray module comprising a gas outlet surface, the spray module is arranged at the bottom of the atomic layer deposition chamber, the gas outlet surface faces the top of the atomic layer deposition chamber, the atomic layer deposition chamber comprises a third side wall and a fourth side wall arranged oppositely, the third side wall is provided with a second inlet, and the fourth side wall is provided with a second outlet; A transmission device is used to transport a carrier carrying a substrate through the first entrance, the first coating chamber, the first outlet, the second entrance, the atomic layer deposition chamber and the second outlet in sequence, the first outlet corresponds to the second entrance and is selectively connected, so that the first coating chamber and the atomic layer deposition chamber coat the lower surface of the substrate in sequence through the transmission device.

[0007] Further, the first side wall is arranged opposite to the second side wall, the third side wall is arranged opposite to the fourth side wall, and the first inlet, the first outlet, the second inlet and the second outlet have the same height.

[0008] Furthermore, the transmission device includes a first carrier transmission device and a second carrier transmission device, the first carrier transmission device is used to drive the carrier to translate in the first coating chamber, the second carrier transmission device is used to drive the carrier to translate in the atomic layer deposition chamber, and the first carrier transmission device is at the same height as the second carrier transmission device.

[0009] Further, the first carrier transmission device includes a plurality of first transmission mechanisms, the second carrier transmission device includes a plurality of second transmission mechanisms, a plurality of transmission holes are opened on the side walls of the first coating chamber and the atomic layer deposition chamber, the first transmission mechanism is inserted into the transmission hole of the first coating chamber to form a first transmission wheel, the second transmission mechanism is inserted into the transmission hole of the atomic layer deposition chamber to form a second transmission wheel, the first transmission wheel and / or the second transmission wheel are used to carry and transmit the carrier, and the bearing surface height of the first transmission wheel is consistent with the bearing surface height of the second transmission wheel.

[0010] Furthermore, the second transmission mechanism also includes a plurality of synchronous wheels, a synchronous belt and a plurality of auxiliary transmission parts. The plurality of synchronous wheels are arranged at intervals along the transmission direction on the outside of the atomic layer deposition chamber, and the auxiliary transmission parts are arranged between adjacent synchronous wheels. Any adjacent synchronous wheels and the auxiliary transmission parts therebetween are connected by the synchronous belt sleeve so that the plurality of synchronous wheels can be transmitted synchronously.

[0011] Further, the second transmission wheel includes an extension portion, a carrier plate contact portion and a limiting portion, the extension portion, the carrier plate contact portion and the limiting portion are arranged and connected along the axial direction of the second transmission wheel, the limiting portion is arranged between the extension portion and the carrier plate contact portion, the carrier plate contact portion is used to carry and transmit the carrier plate, and the outer diameter of the limiting portion is larger than the outer diameter of the carrier plate contact portion, so that the limiting portion limits the carrier plate in the width direction.

[0012] Furthermore, a plurality of mounting notches are provided on the edge of the spray module, and the plurality of mounting notches are arranged at intervals along the transmission direction. The plurality of mounting notches correspond to the plurality of second transmission wheels, and the shape of the mounting notches matches the second transmission wheel, so that there is a gap between the spray module and the second transmission wheel.

[0013] Furthermore, the spray module also includes a plurality of support and limit members, which are arranged between the spray module and the bottom surface of the atomic layer deposition chamber to support the spray module and ensure a set interval between the spray module and the carrier.

[0014] Furthermore, the support limiter includes a plurality of limit rods and a plurality of adjustment mechanisms, and the spray module includes a plurality of first limit holes. The first end of the limiting rod is fixedly connected to the bottom of the atomic layer deposition chamber, and the second end of the limiting rod is movably connected to the spray module through the first limiting hole, so that the first limiting hole limits the spray module. Two ends of the adjustment mechanism are fixedly connected to the bottom of the atomic layer deposition chamber and the spray module respectively, and the adjustment structure is used to adjust the distance between the spray module and the carrier.

[0015] Furthermore, the atomic layer deposition chamber also includes an upper chamber cover and a heating module, wherein the upper chamber cover is used to close the atomic layer deposition chamber from the top of the atomic layer deposition chamber, and the heating module is arranged on the upper chamber cover.

[0016] Furthermore, the heating module includes multiple heating elements and multiple heating plates, and the multiple heating elements are fixedly connected to the upper chamber cover and the heating plates. The heating elements are used to transfer electrical energy from the outside to the atomic layer deposition chamber to heat the heating plates, and the multiple heating plates are arranged along the transmission direction.

[0017] Furthermore, the continuous coating device further comprises a vacuum system and a transmission valve, wherein the first outlet is connected to the second inlet via the transmission valve. The vacuum system includes a plurality of vacuum pipelines, and the plurality of vacuum pipelines are respectively connected to the first coating chamber and the atomic layer deposition chamber, so that when the vacuum degrees of the first coating chamber and the atomic layer deposition chamber are consistent, the transfer valve can be opened, and the carrier passes through the first outlet through the transfer device and then enters the atomic layer deposition chamber from the second inlet through the transfer valve.

[0018] Furthermore, the size of the transfer valve along the transfer direction is smaller than the size of the carrier along the transfer direction, so that when the carrier is transferred out of the first outlet by the transfer device, the two ends of the carrier can be respectively located in the first coating chamber and the atomic layer deposition chamber and be carried and transmitted by the transfer device at the same time.

[0019] Furthermore, the vacuum pipeline includes an exhaust pipe, which is arranged on the lower side of the spray module in the atomic layer deposition chamber. A plurality of the exhaust pipes are arranged at intervals along the transmission direction. The exhaust pipe includes a plurality of exhaust ports, so that the gas exhausted from the spray module is discharged from the lower side through the exhaust port.

[0020] Further, the continuous coating device further comprises a feed chamber, the feed chamber comprises a carrier tray feed transmission device, the feed chamber further comprises a fifth side wall and a sixth side wall arranged opposite to each other, the fifth side wall is provided with a feed port, the sixth side wall is provided with a transfer entrance, the feed port and the transfer entrance correspond to the first entrance or the second entrance and have the same height, so that the carrier tray can pass through the feed port through the carrier tray feed transmission device to enter the feed chamber, and can pass through the transfer entrance to leave the feed chamber and enter the first coating chamber and / or the atomic layer deposition chamber; Furthermore, the continuous coating device also includes a discharge chamber, which includes a carrier plate discharge transmission device and a seventh side wall and an eighth side wall arranged opposite to each other, the seventh side wall is provided with a transfer outlet, and the eighth side wall is provided with a discharge outlet, the discharge outlet and the transfer outlet correspond to the first outlet or the second outlet and have the same height, so that the carrier plate can pass through the carrier plate discharge transmission device through the transfer outlet to enter the discharge chamber, and can pass through the discharge outlet to leave the discharge chamber.

[0021] As a second aspect of the present application, a continuous coating method is disclosed, using the above-mentioned continuous coating device, comprising: Providing an initial carrier, the initial carrier carrying a plurality of substrates, the substrates comprising a front side and a back side; The initial carrier is introduced into the first coating chamber from the first entrance through the transmission device, and the back side of the substrate is subjected to a first coating process to obtain a first carrier with a substrate having a first film layer deposited on the back side; The first carrier is transferred from the first outlet through the transfer device and transferred from the second inlet to the atomic layer deposition chamber, and the back side of the substrate is subjected to atomic layer deposition to obtain a second carrier with a second film layer substrate deposited on the back side, and the second film layer and the first film layer are stacked on the back side of the substrate; The second carrier is transferred out from the second outlet through the transfer device to complete the continuous coating.

[0022] Furthermore, the first coating process includes physical vapor deposition and / or chemical vapor deposition.

[0023] Further, the atomic layer deposition process includes time-isolated atomic layer deposition or space-isolated atomic layer deposition.

[0024] The continuous coating device of the present application can integrate different coating processes to achieve continuous coating in a vacuum. The coating or deposition direction of the first coating chamber and the atomic layer deposition chamber is set to coat or deposit the lower surface of the substrate from bottom to top, reducing the flipping operation in the intermediate transition, eliminating the vacuum transfer chamber used for chamber switching, reducing the number of additional breaking and vacuuming, making the production efficiency higher, and the deposited film layer from bottom to top has less particle contamination and higher film quality.

[0025] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and drawings. The best embodiments or means of the present invention will be described in detail in conjunction with the drawings, but they are not intended to limit the technical solutions of the present invention. In addition, there are multiple features, elements, and components that appear in each of the following texts and drawings, and different symbols or numbers are marked for convenience, but they all represent components with the same or similar structures or functions. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The present invention will be further described below in conjunction with the accompanying drawings: Figure 1 It is a structural schematic diagram of an embodiment of a continuous coating device provided by the present invention; Figure 2 It is a flow chart of an implementation method of the continuous coating method provided by the present invention; Figure 3 It is a schematic structural diagram of an implementation mode of the atomic layer deposition chamber provided by the present invention; Figure 4 It is a schematic structural diagram of an implementation mode of the atomic layer deposition chamber provided by the present invention; Figure 5 It is a schematic structural diagram of an implementation mode of the atomic layer deposition chamber provided by the present invention; Figure 6 It is a schematic structural diagram of an implementation mode of the atomic layer deposition chamber provided by the present invention; Figure 7 It is a schematic structural diagram of an implementation mode of the atomic layer deposition chamber provided by the present invention; Figure 8 It is a gas distribution diagram simulated by the spray module provided by the present invention.

[0027] Description of Reference Numerals 1: continuous coating device; 2: first coating device; 3: atomic layer deposition device; 4: vacuum system; 5: heating module; 6: gas supply system; 8: upper chamber cover; 40: carrier plate 21: first coating chamber; 22: first carrier transfer device; 23: material source; 31: atomic layer deposition chamber; 3a: second inlet; 3b: second outlet; 32: spray module; 33: second carrier transfer device; 34: air intake module 32a: limit rod; 32b: installation notch; 32c: adjustment mechanism; 321: first limit hole; 320a: first precursor gas hole; 320b: second precursor gas hole; 320c: isolation gas hole; 330: second transmission mechanism; 330a: active transmission device; 330b: passive transmission device; 33a: synchronous wheel; 33b: synchronous belt; 33c: auxiliary transmission part; 331: second transmission wheel; 331a: extension portion; 331b: limiting portion; 331c: carrier contact portion; 51: heating element; 52: heat insulation board; 52a: heat insulation board gap; 53: limit fixing hole; 4a: exhaust pipe; 4a1: exhaust port; 10: feeding chamber; 10a: tray feeding transmission device; 11: discharging chamber; 11a: tray discharging transmission device; 1a: feeding platform; 1b: first transfer valve; 1c: transfer valve; 1d: second transfer valve; 1e: discharging platform. DETAILED DESCRIPTION

[0028] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments in the implementation manner are intended to be used to explain the present invention and should not be construed as limiting the present invention.

[0029] References to "one embodiment" or "an example" or "an example" in this specification mean that a particular feature, structure, or characteristic described in conjunction with the embodiment itself may be included in at least one embodiment disclosed in the present application. The appearance of the phrase "in one embodiment" in various places in the specification does not necessarily refer to the same embodiment.

[0030] It should be pointed out that in the present invention, “inner side” refers to the side close to the initial substrate, and “outer side” refers to the side away from the initial substrate.

[0031] In the evaporation process, the evaporation source needs to be heated and vaporized. Due to the influence of thermal expansion and contraction, the gas will rise. Therefore, in the evaporation chamber, the evaporation source is usually placed below the chamber and the substrate is placed above the chamber. The rising gas solidifies after encountering the substrate to form a film layer.

[0032] In the atomic layer deposition process, the gaseous process gas is directly introduced into the chamber through spraying, and is deposited on the substrate under the action of the spraying gas pressure and the gravity of the gas. Therefore, in the atomic layer deposition process, the substrate is usually placed below the chamber, and the gas spray module for spraying the gas is placed above the chamber.

[0033] With the increase in the types of semiconductor devices, the former film layer is made by evaporation process, and the latter film layer is made by atomic layer deposition process. For example, in perovskite cells, the electron transport layer includes stacked C60 and SnO2 film layers, where C60 is made by evaporation process and SnO2 layer is made by atomic layer deposition process.

[0034] After the C60 layer is obtained by the evaporation process in the evaporation chamber, it is necessary to break the air to take the carrier out of the evaporation chamber and put it into the transfer chamber. After the transfer chamber is broken, the carrier is taken out of the transfer chamber. After manual flipping, the carrier is transferred into the atomic layer deposition transfer chamber, and then evacuated. After the vacuum degree of the transfer chamber is consistent with that of the atomic layer deposition chamber, the carrier is transferred into the atomic layer deposition chamber for atomic layer deposition. On the one hand, the above-mentioned coating method will result in an additional breaking and vacuuming when transferring from evaporation to the atomic layer deposition chamber, which will result in long production time and low efficiency. On the other hand, after the substrate is evaporated with C60 and taken out from the evaporation equipment, it needs to be manually flipped before atomic layer deposition can be carried out, which will cause particle contamination and inconvenience of manual operation. In addition, due to the difference in the upper and lower coatings, these two coating equipment cannot be integrated together to achieve continuous vacuum coating.

[0035] Due to the particularity of the evaporation equipment, specifically, the evaporation material evaporates upward naturally after being heated and evaporated, so its evaporation direction is also from bottom to top, which requires that the evaporation port of the evaporation source must be set upward, otherwise the evaporation material will flow out of the evaporation crucible due to gravity. However, if the evaporation source is set at the top of the evaporation chamber to evaporate the upper surface of the substrate in order to adapt the evaporation to atomic layer deposition, it is necessary to set a special pipeline direction, that is, to change the direction of the beam in the pipeline through the pipeline to complete the downward evaporation of the evaporation material, so as to coat the upper surface of the substrate; or, a special-shaped crucible is used, and the outlet of the special-shaped crucible is turned downward by a specific processing method. The above two methods will make the evaporation equipment structure extremely complicated and difficult to implement, and the equipment processing and use costs will increase sharply. In addition, the evaporation material is easy to be deposited on the pipeline in a special direction or on the inner wall of the special-shaped crucible, resulting in a large amount of waste of evaporation material. The materials deposited on the inner wall of the pipe or crucible are difficult to remove, and the evaporation materials remaining in the pipe will limit the evaporation equipment to be used for the evaporation of a single material, and other evaporation materials cannot be added, otherwise it will cause cross contamination of materials. In addition, the pipe and the special-shaped crucible will significantly affect the evaporation beam, reduce the evaporation efficiency, and thus reduce the overall efficiency of continuous coating. At the same time, the top-to-bottom evaporation method will also produce additional particle contamination on the substrate surface, which is not conducive to improving the quality of the film layer.

[0036] In view of this, the present application has innovatively invented a bottom-up continuous coating device for coating / deposition, in which the atomic layer deposition chamber is arranged as a chamber structure for spraying from bottom to top, and the spray module is arranged at the bottom of the reaction chamber. The reaction gas sprays the substrate upward at a certain spray pressure to overcome the gravity of the reaction gas itself, thereby obtaining a deposition effect consistent with the traditional top-down atomic layer deposition method.

[0037] This atomic layer deposition chamber can be connected to other coating devices with a coating direction from bottom to top, and there is no need to change the position of the transmission device and other equipment chamber structures. Therefore, it can be adapted to other coating devices. There is no need to set up additional vacuum extraction and vacuum breaking transfer chambers between the atomic layer deposition chamber and other coating chambers. Continuous transmission and chamber isolation can be achieved only by opening and closing vacuum valves between chambers. If the substrate is always in a vacuum state during the chamber switching process, the contamination of particles on the film layer / surface can be reduced, thereby improving the coating quality, thereby achieving vacuum continuous coating.

[0038] However, the atomic layer deposition chamber of the present application is not limited to the deposition of SnO2, but can also be other metal oxides. Other coating chambers are not limited to evaporation chambers, and evaporation is not limited to C60. It can also be a coating chamber that coats the lower surface of the substrate from bottom to top in any coating direction, such as magnetron sputtering, plasma chemical deposition chamber, etc. Any front-end and back-end coating equipment that coats or deposits from bottom to top can be adapted to the atomic layer deposition chamber of the present application to achieve vacuum continuous coating.

[0039] As a first aspect of the present invention, a continuous coating device 1 is disclosed, such as Figure 1 , Figures 3 to 7 As shown, the continuous coating device 1 comprises: A first coating device 2, wherein the first coating device has at least one first coating chamber 21, a material source 23 is disposed at the bottom of the first coating chamber 21, the first coating chamber 21 comprises a first side wall and a second side wall, a first inlet is disposed on the first side wall, and a first outlet is disposed on the second side wall; The atomic layer deposition device 3 has an atomic layer deposition chamber 31, the atomic layer deposition chamber 31 includes a spray module 32, the spray module 32 includes a gas outlet surface, the spray module 32 is arranged at the bottom of the atomic layer deposition chamber 31, and the gas outlet surface faces the top of the atomic layer deposition chamber 31, the atomic layer deposition chamber 31 includes a third side wall and a fourth side wall arranged opposite to each other, the third side wall is provided with a second inlet 3a, and the fourth side wall is provided with a second outlet 3b; It also includes a transmission device, which is used to transport the carrier carrying the substrate through the first entrance, the first coating chamber 21, the first outlet, the second entrance, the atomic layer deposition chamber 31 and the second outlet in sequence. The first outlet corresponds to the second entrance and is selectively connected, so that the first coating chamber 21 and the atomic layer deposition chamber 31 coat the lower surface of the substrate on the carrier in sequence through the transmission device.

[0040] The present application does not make any special limitation on the transmission sequence, and the positions of the first coating chamber and the atomic layer deposition chamber are not fixed. It is only necessary that the carrier can be coated through different chambers in sequence. For example, the transmission device can also carry the carrier through the second entrance, the atomic layer deposition chamber, the second exit, the first entrance, the first coating chamber and the first exit in sequence, so that the atomic layer deposition chamber first performs atomic layer deposition on the back side of the substrate, and then the first coating chamber coats the back side of the substrate; for another example, an atomic layer deposition chamber can be set between two first coating chambers; or, a first coating chamber can be set between two atomic layer deposition chambers, as long as at least one first coating chamber is connected to the atomic layer deposition chamber.

[0041] It is understandable that in some cases, if the first coating chamber and the atomic layer deposition chamber are directly connected, there may be a problem of large pressure difference, and the reaction gases in the two chambers are easy to mix and cause chamber contamination. Therefore, at least one buffer chamber can be added between the first coating chamber and the atomic layer deposition chamber. The buffer chamber is used to adjust the vacuum degree between the first coating chamber and the atomic layer deposition chamber and avoid cross-contamination between the two chambers, so that the carrier passes through the buffer chamber after passing through the first coating chamber. In addition, the buffer chamber can also play a role in regulating the operation rhythm. For example, after the operation of the first coating chamber is completed, but the subsequent atomic layer deposition chamber has not completed the deposition operation of the previous batch of substrates, in this case, the batch of substrates that have completed the first coating are stored in the buffer chamber through the carrier, waiting for atomic layer deposition. At the same time, the first coating chamber can also carry out the coating operation of the next batch of substrates, which greatly increases the continuous coating efficiency.

[0042] The spray module of the present application is not simply a random replacement of the spray module, but also involves the installation and connection of the spray module and the chamber, and other components also need to adjust the structure and position accordingly. Specifically, in the traditional upper coating process, the gas is sprayed from top to bottom, and the exhaust pipe and the exhaust port are generally arranged on the side wall of the chamber or the bottom of the chamber, which makes the exhaust pipe pump less air for the reaction gas sprayed from above, which will cause the number of gas molecules in the chamber to increase. On the one hand, it will increase the lateral diffusion length of different precursor gases, resulting in the inability of the mixed gas to form a self-limiting single precursor adsorption and atomic deposition reaction (more likely to form chemical reaction deposition). On the other hand, more reaction gas remains and cannot be pumped away in the cavity, increasing the cavity pressure. The increase in cavity pressure will further make it difficult to decompose and dissociate the precursor gas, reduce the reaction efficiency, and the residual gases react and polymerize, further increasing the possibility of polymer contamination and adhesion to the cavity wall.

[0043] However, the above problems can be solved in the lower coating of the present invention. This is because during the lower coating process, the gas is sprayed from bottom to top, and the exhaust pipe and exhaust port are more likely to extract the gas ejected from below, and the amount of air pumped will be relatively larger than that of the upper coating. Therefore, the number of gas molecules in the chamber is smaller, which helps to reduce the lateral diffusion length of the precursor, reduce the possibility of mixed gas between different gas sources, and greatly improve the efficiency of the self-limiting atomic layer deposition reaction. In addition, the increased amount of air pumping reduces the cavity pressure, which can reduce gas phase reactions and ensure that deposition mainly occurs on the substrate surface. This makes the film thickness more uniform, and low pressure is also conducive to the desorption of by-product molecules from the substrate surface, making room for more precursor molecules. This is crucial to maintaining a continuous and efficient deposition process. Preferably, the cavity pressure is in the range of 1mbar to 5mbar during the lower coating operation of the present invention, and the cavity pressure is greater during the transmission upper coating operation, generally above 5mbar.

[0044] Figure 8 The gas distribution diagram is obtained by simulating the gas fluid of the outlet of the spray module of the present application when spraying by using ANSYS Fluent simulation software. The horizontal axis represents the positions of different precursor gas outlet holes, and the vertical axis represents the outlet pressure distribution of the first precursor gas hole and the second precursor gas hole. The first precursor gas is tetrakis(dimethylamino)tin, and the second precursor gas is H2O. Figure 7 It can be seen that after the precursor gas is ejected from the outlet, the gas will diffuse in a "trumpet-shaped" manner, and the isolation gas pores will isolate the diffusion between adjacent precursor gases. However, as the distance between the carrier and the spray module increases, the film-forming gap increases, and the isolation effect of the isolation gas pores will weaken, resulting in signs of mixing between the precursors. It is crucial to select a suitable spray spacing based on the diffusion characteristics of different precursors.

[0045] The spray module of the present application is not simply swapped up and down. If the position is simply changed from the upper side to the lower side, but the spray spacing remains unchanged (the spacing between the spray module and the carrier), the gas flow field between the lower spray module and the carrier will change, which cannot form an effective atomic layer deposition reaction. When the spacing is too large, the isolation function of the isolation gas is insufficient, and a reaction accompanied by CVD occurs, rather than only a self-limiting atomic layer deposition reaction. As the spacing between the carrier and the nozzle decreases, the sealing effect between the precursors will improve, but a spacing less than 1mm is difficult to achieve in terms of processing difficulty. In order to further improve the reaction efficiency during atomic layer deposition, the interval between the spray module and the carrier is set in the range of 2 mm to 10 mm in the atomic layer deposition device of the present application. The following Table 1 shows the simulation data of the interval between the carrier and the spray module in the lower film atomic layer deposition device of the present application. The simulation is performed using ANSYS Fluent simulation software. TDMASn indicates that the first precursor gas source is tetrakis(dimethylamino)tin, H2O indicates that the second precursor gas source is water, and the distribution length (D) indicates the length of the lateral diffusion of the corresponding precursor gas source on the lower surface of the substrate when spraying. The self-limiting property (δ) is calculated as follows: δ=(1-((D-d1) / d1))*100% Among them, δ is self-limiting, D is distribution length, d1 is the spacing between adjacent different precursor outlet holes, and the self-limiting in Table 1 is calculated when the d1 spacing is set to 40mm. It should be noted that after the precursor gas is ejected from the outlet hole, the gas will diffuse in a "bell-shaped" manner. The distribution length refers to the lateral diffusion length of a single precursor gas when it is sprayed on the lower surface of the substrate. Generally, the larger the distribution length, the larger the precursor "bell-shaped" diffusion distance. If the distribution length is greater than the spacing between the outlet holes, it is easier for adjacent precursor gases to diffuse and cross-mix, which makes the isolation effect not good, so that the atomic layer cannot undergo a pure single reaction in each cycle; and the smaller the distribution length, the smaller the precursor diffusion distance, the smaller the "bell-shaped" angle of the spray gas, and the more inclined to a nearly vertical spray shape, so that adjacent precursors do not interfere with each other and are not easy to mix, so that atomic layer deposition is more likely to undergo a single reaction, and the atomic layer deposition effect is better. Self-limitation is calculated based on the distribution length and the pore spacing, which represents the degree to which a single reaction can occur in atomic layer deposition based on the distribution length obtained by simulation when the pore spacing is not fixed. The greater the self-limitation, the smaller the ratio of the distribution length to the pore spacing, and the more difficult it is for adjacent precursor gases to mix; the smaller the self-limitation, the greater the ratio of the distribution length to the pore spacing, and the easier it is for adjacent precursor gases to mix. Table 1

[0046] According to Table 1, when the spray spacing is 2 mm, the distribution length of the first precursor gas, i.e., tetrakis(dimethylamino)tin, is 53.67 mm, and the distribution length of the second precursor gas (H2O) is 39.98 mm. If the interval between the outlet holes of the two precursor gases is set to 40 mm, the self-limiting properties are calculated to be 65.82% and 100%, respectively. This shows that at a spacing of 2 mm, a more self-limiting atomic layer deposition effect (rather than ordinary CVD reaction) can be obtained. When the spray spacing is 10 mm, the distribution length of tetrakis(dimethylamino)tin is 70.21 mm, and the distribution length of the second precursor gas is 51.47 mm. The self-limiting properties are calculated to be 24.47% and 71.32%, respectively. Tetrakis(dimethylamino)tin is more likely to diffuse laterally, and its corresponding self-limiting property is reduced. There is mixed gas, the atomic layer deposition effect is reduced, and the chemical reaction deposition effect is increased. When the spacing is 11 mm, the distribution lengths of the first precursor gas and the second precursor gas exceed the spacing of 40 mm between adjacent gas outlets, the self-limitation is 0, the isolation gas loses its isolation function, and the cavity is completely transformed into a chemical vapor deposition reaction.

[0047] Different from the traditional spray spacing and gas spacing of coating, the present application adjusts the spacing between the air outlets on the above-mentioned spray spacing of 2mm-10mm, and adjusts the spacing between the air outlets of adjacent different precursors of the spray module to between 16mm and 80mm. The following Table 2 is the simulation data of the air outlet spacing of the spray module in the lower film atomic layer deposition equipment of the present application, wherein the digital item after the "-" in the first column of Table 2 represents half of the spacing between the precursor gas hole corresponding to the previous item and the adjacent different precursor gas holes, for example, "TDMASn-10mm" means that the spacing between the tetrakis(dimethylamino)tin precursor gas hole and the adjacent H2O precursor gas hole is 20mm, and for another example, "H2O-20mm" means that the spacing between the H2O precursor gas hole and the tetrakis(dimethylamino)tin precursor gas hole is 40mm.

[0048] Table 2

[0049] As can be seen from Table 2, the spacing between the adjacent outlet holes of the spray module determines the diffusion distance of the precursor. When the spacing is reduced, that is, the spacing between the outlet holes of adjacent different precursors is less than 16mm, the isolation gas cannot form an effective isolation, and the precursors will merge with each other, that is, the distribution length becomes longer and longer than the spacing between the outlet holes, and the self-limitation decreases to 0. At this time, the cavity is completely transformed into a chemical vapor deposition reaction. When the spacing between the outlet holes of adjacent different precursors is too large, although its self-limitation can be significantly improved, it will waste cavity space and affect production efficiency.

[0050] The present application does not impose any special limitation on the spacing of the isolation gas holes. Under the scheme of the spray module for lower coating, the precursor gas generally does not easily diffuse laterally. Preferably, the isolation gas holes are arranged near the precursor holes with a larger distribution length to effectively isolate their distribution. In some embodiments, the spacing between the isolation gas holes and the first precursor gas holes is between 10 mm and 30 mm.

[0051] In order to enable the carrier to complete the cavity transfer between the two cavities through the transmission device, as an optional implementation method, the first side wall and the second side wall are arranged opposite to each other, the third side wall and the fourth side wall are arranged opposite to each other, and the first entrance, the first exit, the second entrance and the second exit are at the same height. In this way, when the carrier is transmitted from any first exit or second exit, it can be directly transmitted to any first entrance or second entrance along the transmission direction without involving any change in longitudinal position, so that the transmission is smoother and faster, and the production efficiency is improved.

[0052] The present application does not specifically limit how the transmission device carries the carrier through different coating chambers in sequence, for example, it can be transmitted by a conveyor belt, or by rolling transmission wheels, or by clamping and transmitting by a mechanical arm.

[0053] When the spray module is set at the bottom, the transmission speed affects the residence time of the sample within the precursor concentration range and the deposition efficiency. The carrier or substrate transmission speed is positively correlated with the precursor concentration. When the carrier gas flow rate is increased, the speed range will increase accordingly, and the maximum movement speed will increase at a stable growth rate, but the precursor consumption will increase. Therefore, a reasonable process match has a very important impact on improving production efficiency and reducing consumption. Table 3 below is the gas distribution length, self-limitation and substrate film thickness data corresponding to different transmission speeds in the lower film atomic layer deposition equipment of this application. The self-limitation in Table 3 is calculated when the d1 spacing is set to 40 mm, and the film thickness is obtained by ellipsometer testing.

[0054] Table 3

[0055] It can be seen from Table 3 that if the transmission speed exceeds 40m / min, the carrier will be transmitted too fast, so that the reaction gas will not have time to chemically combine on the substrate surface, and it cannot grow stably, and the film thickness will be significantly reduced, thereby reducing the coating efficiency; if the transmission speed is lower than 2m / min, the deposition efficiency of spatial atomic layer deposition will be reduced, and the excess reaction gas will be wasted and discharged and cannot be effectively utilized. When the transmission speed changes, the distribution length and self-limitation do not change significantly, and the film thickness changes significantly. When the transmission speed is 10 m / min, the film thickness in one transmission cycle is 7.222nm, and when the transmission speed increases to 40 m / min, the film thickness in one transmission cycle decreases to 3.5228nm. Preferably, the transmission speed is between 2m / min and 40m / min, the substrate deposition film thickness is appropriate, and the deposition efficiency is more ideal.

[0056] In order to enable different coating chambers to independently perform coating or deposition operations to maximize production efficiency, as an optional implementation, the transmission device includes a first carrier transmission device 22 and a second carrier transmission device 33. The first carrier transmission device 22 is used to drive the carrier to translate in the first coating chamber 21, and the second carrier transmission device 33 is used to drive the carrier to translate in the atomic layer deposition chamber 31.

[0057] In some embodiments, while a carrier is being reciprocatedly coated in the first coating chamber 21 via the first carrier transfer device 22, another carrier is being reciprocatedly subjected to atomic layer deposition in the atomic layer deposition chamber 31 via the second carrier transfer device. In this way, the two chambers do not interfere with each other, and the formation of cavities to cause waste of production capacity is avoided. After the atomic layer deposition chamber 31 completes the deposition of the previous carrier, the carrier in the first coating chamber 21 also completes the coating. In this way, after the previous carrier is transferred out of the atomic layer deposition chamber 31, the next carrier in the first coating chamber 21 can directly enter the atomic layer deposition chamber 31 to continue the deposition process, thereby greatly improving production efficiency.

[0058] Among them, the height of the first carrier transmission device is consistent with that of the second carrier transmission device in order to facilitate the docking of the two independent transmission devices, that is, at the connection of the two cavities, the carrier is first transferred out of the cavity by the first or second carrier transmission device. During this transfer process, the end of the carrier that is first transferred out will first contact the next deposition cavity and the first or second carrier transmission device in the next deposition cavity. In order to make the transmission and transfer process more stable, the heights of the carrier transmission devices in the two cavities need to be consistent, which enables the carrier to be transmitted on a horizontal plane.

[0059] In order to further improve the transmission effect, increase the synchronous transmission performance, and ensure the stability of the transmission speed at the set time, preferably, the second carrier transmission device 33 includes an active transmission device 330a and a driven transmission device 330b, which are respectively arranged on the two opposite side walls of the atomic layer deposition chamber. The active transmission device 330a drives the driven transmission device 330b through a transmission rod to achieve synchronous transmission.

[0060] The first tray transport device and the second tray transport device may have the same structure or different structures.

[0061] In order to improve the transmission effect, increase the synchronous transmission and transmission stability, as an optional implementation, the first carrier transmission device 22 includes a plurality of first transmission mechanisms, the second carrier transmission device 33 includes a plurality of second transmission mechanisms 330, and the side walls of the first coating chamber 21 and the atomic layer deposition chamber 31 are provided with a plurality of transmission holes, the first transmission mechanism is inserted into the transmission hole of the first coating chamber 21 to form a first transmission wheel, the second transmission mechanism 330 is inserted into the transmission hole of the atomic layer deposition chamber 31 to form a second transmission wheel 331, the first transmission wheel and / or the second transmission wheel 331 are used to carry and transmit the carrier, and the first transmission wheel corresponds to the second transmission wheel 331. The carrier is transmitted in the form of a transmission wheel, and the force is more evenly balanced, so that the carrier transmission is more stable, and at the same time, multiple transmission mechanisms jointly carry the carrier, so that the speeds between them match each other to ensure the synchronization of transmission.

[0062] Preferably, the height of the bearing surface of the first transmission wheel is consistent with the height of the bearing surface of the second transmission wheel. When the carrier is transferred from the first outlet or the second outlet to the second entrance or the first entrance, since no transmission device is provided between the two cavities, it is necessary to ensure that the transmission surfaces of the transmission devices in different cavities are consistent, so as to reduce the risk of the carrier falling or getting stuck during the transfer between cavities. In order to further improve the transmission effect, increase the synchronous transmission performance, and ensure the stability of the transmission speed at the set time, as a preferred embodiment, the second transmission mechanism 330 also includes a plurality of synchronous wheels 33a, a synchronous belt 33b and a plurality of auxiliary transmission members 33c, wherein the plurality of synchronous wheels 33a are arranged at intervals along the transmission direction on the outside of the atomic layer deposition chamber, and an auxiliary transmission member 33c is arranged between adjacent synchronous wheels 33a, and any adjacent synchronous wheels 33a and the auxiliary transmission member 33c therebetween are connected by a synchronous belt 33b sleeve, so that the plurality of synchronous wheels 33a can be synchronously transmitted, wherein the auxiliary transmission member 33c has a tensioning effect, and can adjust the tension of the synchronous belt 33b and the synchronous wheel 33a to achieve the best synchronization effect. It can be understood that in order to ensure the synchronization of the transmission on both sides, the driven transmission device and the active transmission device have the same structure, that is, the driven transmission device also includes a plurality of second transmission mechanisms, the second transmission mechanism includes synchronous wheels 33a, synchronous belts 33b and auxiliary transmission members 33c, and the positions of the driven transmission devices correspond to the active transmission devices one by one.

[0063] The present application does not make any special limitation on how the second transmission wheel carries and transports the carrier. The carrier may be carried on the second transmission wheel, and the multiple second transmission wheels 331 rotate to drive the carrier to be transmitted by friction. Preferably, the second transmission wheel 331 includes an extension portion 331a, a carrier contact portion 331c and a limiting portion 331b. The extension portion 331a, the carrier contact portion 331c and the limiting portion 331b are arranged and connected along the axial direction of the second transmission wheel 331. The limiting portion 331b is arranged between the extension portion 331a and the carrier contact portion 331c. The carrier contact portion 331c is used to carry and transmit the carrier. The outer diameter of the limiting portion 331b is larger than the outer diameter of the carrier contact portion 331c, so that the limiting portion limits the carrier in the width direction.

[0064] Since the spray module of the present application is arranged below the carrier plate for lower coating, in order to make the spray module close enough to the carrier plate for spraying and at the same time make sure that the spray module does not affect the transmission of the second transmission wheel to the carrier plate when installed, the spray module is provided with multiple installation notches 32b at the edge close to the side wall, and the multiple installation notches 32b are arranged at intervals along the transmission direction, and the multiple installation notches 32b correspond to the multiple second transmission wheels, and the shape of the installation notches 32b matches the second transmission wheel, so that there is an interval between the spray module and the adjacent multiple second transmission wheels. This makes it possible for the second transmission wheel to not touch the spray module when rotating, and at the same time, the interval position can also allow the excess reactant gas to enter the bottom of the chamber from the interval during deposition and be drawn away.

[0065] The present application does not make any special restrictions on how the spray module is set at the bottom of the atomic layer deposition chamber. It only needs to be set at the bottom to spray toward the top. For example, it can be simply placed on the bottom surface of the chamber. For another example, it can be fixed to the bottom of the chamber by bolts, buckles, etc., which can be detachably installed. Considering that the spray module needs regular cleaning, maintenance and replacement, it is necessary to have a certain disassembly structure. At the same time, the atomic layer deposition chamber is stationary during operation and will not be disturbed by the transmission device. Therefore, as a preference, the spray module also includes a plurality of support limit members, which are arranged between the spray module and the bottom of the atomic layer deposition chamber to support the spray module and allow a set interval to exist between the spray module and the bearing surface of the carrier transmission device. Preferably, the set interval is between 3mm and 8mm.

[0066] In some embodiments, because the spray module will be affected by the temperature in the chamber and the deposition temperature is generally high, in order to prevent the spray module from undergoing thermal deformation and causing a change in position relative to the chamber, the support limit member includes a plurality of limit rods 32a, and the spray module includes a plurality of first limit holes 321. The first end of the limit rod 32a is fixedly connected to the bottom of the reaction chamber, and the second end of the limit rod 32a is movably connected to the spray module through the first limit hole 321, so that the first limit hole 321 limits the spray module to prevent the spray module from lateral movement, while providing a portion of thermal deformation space to avoid thermal stress and increase the service life of the spray module.

[0067] In some embodiments, the support and limit member further includes a plurality of adjustment mechanisms 32c, the two ends of the adjustment mechanism 32c are respectively fixedly connected to the bottom of the reaction chamber and the spray module, and the adjustment structure is used to adjust the distance between the spray module and the carrier.

[0068] The atomic layer deposition chamber also includes an upper chamber cover 8 and a heating module 5. The upper chamber cover 8 is used to close the atomic layer deposition chamber from the top of the atomic layer deposition chamber, and the heating module 5 is arranged on the upper chamber cover 8. In the related art, the heating module 5 is arranged at the bottom of the chamber, and is heated from bottom to top (referred to as bottom heating). The present application is a top heating mode, and the heating module 5 is installed on the chamber cover to avoid interference with the transmission device, and the heating module 5 is made as large as possible to increase the coverage of the substrate and reduce edge heat dissipation.

[0069] In order to increase the heat radiation area while reducing the thermal deformation effect caused by heating, preferably, the heating module includes multiple heating elements 51 and multiple heating plates, multiple heating elements 51 and heating plates can disperse the heat concentration, multiple heating elements 51 are fixedly connected to the upper chamber cover and the heating plate, and the heating element 51 is used to transfer electrical energy from the outside to the atomic layer deposition chamber to heat the heating plate, and multiple heating plates are arranged along the transmission direction. Preferably, the spacing between the heating plate and the carrier is between 5mm and 9mm to achieve the best heating effect. In order to make the heating temperature more uniform at various positions of the cavity, preferably, the multiple heating plates include an intermediate heating plate and an edge heating plate, and the size of the intermediate heating plate along the transmission direction is greater than the size of the edge heating plate along the transmission direction. Preferably, the length of the intermediate heating plate is between 1500mm and 2500mm, the length of the edge heating plate is between 100mm and 500mm, and the size of the intermediate heating plate and the edge heating plate along the width direction of the reaction chamber is between 1000mm and 1500mm.

[0070] The heating plate is generally a metal plate with good thermal conductivity. It is easy to be thermally deformed when the temperature rises. It is more susceptible to thermal deformation at the fixed connection with the chamber cover. In order to reduce the impact of thermal deformation of the heating plate, as a preference, a plurality of limiting fixing holes 53 are opened on the heating plates. The heating plates are connected by fasteners and the limiting fixing holes 53. The plurality of limiting fixing holes 53 are arranged along the edge of the heating plate. The plurality of limiting fixing holes 53 have limiting spaces along the transmission direction and / or the width direction of the reaction chamber.

[0071] The space layer atomic layer deposition device of the present application also includes a heat insulation plate 52, which is arranged between the heating plate and the upper chamber cover 8, and the heating plate is also surrounded by the heat insulation plate 52 on all sides, reducing excess heat consumption, thereby ensuring the thermal uniformity of the substrate. Preferably, the heat insulation plate 52 has a heat insulation plate notch 52a on the four side walls on the outside, and the heat insulation plate notch 52a corresponds to the position of the second transmission wheel, so that when the upper chamber cover 8 is closed by the chamber cover opening and closing mechanism 9, the heat insulation plate notch 52a just passes the second transmission wheel, so that the heat insulation plate 52 will not hinder the transmission of the second transmission wheel to the carrier.

[0072] The present application does not make any special restrictions on how the first coating chamber 21 and the atomic layer deposition chamber 31 are connected. It is only necessary that the two chambers can operate independently. Usually, the coating chamber has relatively poor air tightness at the inlet and outlet and the connection. In order to ensure the vacuum state during continuous coating, the first outlet and the second inlet are connected through a transfer valve 1c. The transfer valve 1c is a vacuum valve with isolation and sealing functions. The transfer valve is used to isolate the first coating chamber 21 from the atomic layer deposition chamber 31.

[0073] The continuous coating device 1 of the present application can use a set of vacuum system 4 to evacuate multiple different chambers. Specifically, the continuous coating device 1 also includes a vacuum system 4, which includes multiple vacuum pipelines. The multiple vacuum pipelines are connected to the first coating chamber 21 and the atomic layer deposition chamber 31 accordingly, so that when the vacuum degree of the first coating chamber 21 is consistent with that of the atomic layer deposition chamber 31, the transmission valve 1c can be opened, and the carrier passes through the first outlet through the transmission device and enters the atomic layer deposition chamber 31 from the second inlet through the transmission valve 1c. This can not only save vacuum power energy, but also match the vacuum degree in the chamber with the vacuum degree of the adjacent chamber to reduce the time of opening and closing the valve, and during the opening process, the air pressure difference between the adjacent chambers is smaller, and the fluctuation effect on the carrier is also smaller.

[0074] Since the transmission devices in different chambers are disconnected at the connection points and the chambers are connected by the transmission valve 1c, in some embodiments, when the first carrier transmission device 22 transmits the carrier from the first outlet, the carrier will first pass through the transmission valve 1c and then enter from the second inlet and contact the second carrier transmission device 33, thereby realizing continuous transmission. In order to ensure that the carrier will not be hindered by the transmission valve 1c from contacting the next transmission device and continuing to be transmitted during transfer, it is preferred that the distance between the transmission inlet and the transmission outlet is smaller than the size of the carrier along the transmission direction, so that when the carrier is transmitted from the first outlet by the transmission device, the two ends of the carrier can be respectively located in the first coating chamber and the atomic layer deposition chamber and are simultaneously carried and transmitted by the first carrier transmission device and the second carrier transmission device.

[0075] The vacuum pipeline includes an exhaust pipe 4a, which is arranged on the lower side of the spray module in the atomic layer deposition chamber. Multiple exhaust pipes 4a are arranged at intervals along the transmission direction. The exhaust pipe 4a includes multiple exhaust ports 4a1, so that the gas exhausted from the spray module is discharged from the lower side through the exhaust port 4a1.

[0076] In some embodiments, the continuous coating device 1 also includes a feed chamber 10 and a discharge chamber 11. The feed chamber 10 and the discharge chamber 11 are generally used as transfer chambers for transferring the carrier in or out from the outside. The chamber volume is smaller than that of the coating chamber, which makes the vacuuming and breaking speed faster and the time shorter, thereby reducing production time.

[0077] The feed chamber includes a carrier plate feed transmission device 10a, and the feed chamber also includes a fifth side wall and a sixth side wall that are arranged opposite to each other. A feed port is opened on the fifth side wall, and a transfer entrance is opened on the sixth side wall. The feed port and the transfer entrance are at the same height as the first entrance or the second entrance, so that the carrier can pass through the carrier plate feed transmission device 10a through the feed port to enter the feed chamber, and can be transferred through the transfer entrance to leave the feed chamber and enter the first coating chamber and / or the atomic layer deposition chamber.

[0078] The discharge chamber includes a tray discharge transmission device 11a and a seventh side wall and an eighth side wall arranged opposite to each other. The seventh side wall is provided with a transfer outlet, and the eighth side wall is provided with a discharge outlet. The discharge outlet and the transfer outlet are at the same height as the first outlet or the second outlet, so that the tray can pass through the tray discharge transmission device through the transfer outlet to enter the discharge chamber, and can pass through the discharge outlet to leave the discharge chamber. The feed inlet and the discharge outlet are connected to the outside world through a gate valve.

[0079] In some embodiments, the continuous coating device further includes a feed platform 1a and a discharge platform 1e. The feed platform is connected to the feed chamber via a first transfer valve 1b, and the discharge platform is connected to the discharge chamber via a second transfer valve 1d.

[0080] The present application does not make any special limitation on the first coating chamber 21. It only needs to satisfy that the coating direction of the first coating chamber 21 is to coat the back side of the substrate from bottom to top. The first coating chamber 21 includes at least one of an evaporation chamber, a magnetron sputtering chamber, a reactive plasma deposition chamber, and a chemical reaction deposition chamber.

[0081] The present application does not make any special limitation on the position of the first coating chamber 21. The first coating chamber 21 can be located in front of the atomic layer deposition chamber 31, that is, it enters the atomic layer deposition chamber 31 for deposition after being coated in the first coating chamber 21. The first coating chamber 21 can also be located behind the atomic layer deposition chamber 31, that is, it enters the first coating chamber 21 for coating after being coated in the atomic layer deposition chamber 31. In the latter embodiment, the first inlet corresponds to the second outlet, so that the atomic layer deposition chamber 31 and the first coating chamber 21 coat the lower surface of the substrate on the carrier in sequence through the transmission device.

[0082] Figure 3This is a schematic structural diagram of an embodiment of the atomic layer deposition device provided by the present invention, wherein the atomic deposition device of the present application further includes a gas supply system 6, and the gas supply system is used to supply gas to the spray module. The spray module includes an air outlet, and the air outlet includes a plurality of first precursor gas holes 320a, a plurality of second precursor gas holes 320b, and a plurality of isolation gas holes 320c. The first precursor gas holes and the second precursor gas holes are alternately arranged along the length direction of the reaction chamber, and isolation gas holes are provided between adjacent first precursor gas holes and second precursor gas holes, so that the first precursor gas and the second precursor gas are isolated by the isolation gas. The spray module of the present application also includes an air intake module 34, and the air supply system supplies gas to each air outlet through the air intake module.

[0083] As a second aspect of the present application, a continuous coating method is disclosed, using the above-mentioned continuous coating device, such as Figure 2 As shown, the specific steps include: S100, providing an initial carrier, the initial carrier comprising a plurality of substrates, each substrate comprising a front side and a back side; S200, transferring the initial carrier from the first entrance to the first coating chamber through a transmission device, performing a first coating process on the back side of the substrate, and obtaining a first carrier with a substrate having a first film layer deposited on the back side; S300, transferring the first carrier from the first outlet through a transmission device and transferring it from the second inlet to the atomic layer deposition chamber, performing an atomic layer deposition process on the back side of the substrate, and obtaining a second carrier with a second film layer substrate deposited on the back side, wherein the second film layer and the first film layer are stacked on the back side of the substrate; S400, transferring the second carrier plate out from the second outlet through the transmission device to complete the continuous coating.

[0084] In step S100, the present application does not impose any special limitation on the substrate, which may be a semiconductor silicon wafer or a glass substrate.

[0085] In step S200 , the first coating process includes physical vapor deposition and / or chemical vapor deposition, such as evaporation, magnetron sputtering, plasma enhanced chemical reaction vapor deposition, etc.

[0086] In step S300, the atomic layer deposition process includes time-isolated atomic layer deposition or space-isolated atomic layer deposition. The deposited film layer may be an electron transport layer of a perovskite, such as metal oxides such as SnO2, Al2O3, TiO2, MoO3, V2O5, etc.

[0087] In step S400, the present application does not impose any special limitation on the subsequent preparation method. For example, after atomic layer deposition, evaporation, sputtering and other coating treatments may be continued to achieve a multi-layer film continuous process.

[0088] The continuous coating device of the present application can integrate different coating processes to achieve continuous coating in a vacuum. The coating or deposition direction of the first coating chamber and the atomic layer deposition chamber is set to coat or deposit the lower surface of the substrate from bottom to top, reducing the flipping operation in the intermediate transition, eliminating the vacuum transfer chamber used for chamber switching, reducing the number of additional breaking and vacuuming, making the production efficiency higher, and the deposited film layer from bottom to top has less particle contamination and higher film quality.

[0089] The present application is described below in conjunction with a specific embodiment.

[0090] Providing an initial substrate, the initial substrate comprising a crystalline silicon bottom cell, an ITO composite layer, a hole transport layer, and a perovskite light absorption layer stacked in sequence, and the initial substrate comprising a front side and a back side; placing a plurality of initial substrates into a carrier tray, with the backside of the initial substrates facing downward; The carrier is placed on the loading platform. After the feeding chamber is emptied, the loading platform transfers the carrier into the feeding chamber through the feeding port. The feeding chamber is evacuated. After the vacuum degree reaches the set requirement, the first transfer port of the feeding chamber is opened and connected with the first inlet of the evaporation chamber. The carrier feeding transmission device transfers the carrier from the first inlet into the evaporation chamber. The evaporation chamber is kept in vacuum, C60 powder is put into the evaporation crucible as an evaporation source, and the evaporation source is heated. After the evaporation temperature reaches the set temperature, the evaporation source evaporates upward to the back of the substrate of the carrier to form a film. The first carrier transmission device in the evaporation chamber receives the carrier and reciprocates the carrier in the evaporation chamber to achieve uniform evaporation preparation of the C60 film layer. After the evaporation reaches the set time, the evaporation is stopped, the first outlet of the evaporation chamber and the connected transmission valve and the second inlet are opened, and the first carrier transmission device transmits the carrier from the first outlet and enters the atomic layer deposition chamber through the transmission valve and the second inlet; The atomic layer deposition chamber is kept in vacuum, and the spray module sprays upward on the back of the carrier substrate, wherein the first precursor gas source is dimethyltin or tetramethyltitanium, and the second precursor gas source is oxygen, and an inert gas curtain is arranged between the two precursor gas sources. The second carrier transmission device receives the carrier and reciprocates the carrier in the atomic layer deposition chamber to prepare SnO2. After multiple reciprocating motions to a set time or a set thickness, the spraying is stopped, the second outlet is opened, and connected with the second transfer port of the discharge chamber, and the second carrier transmission device transfers the carrier from the second outlet and enters the discharge chamber through the second transfer port; The second transfer port is closed, the discharge chamber is emptied, and when the air pressure is consistent with the atmospheric pressure, the carrier plate discharge transmission device transfers the carrier plate from the discharge port, and finally a perovskite battery intermediate product with an electron transport layer of C60 and SnO2 continuously deposited on the back of the substrate is obtained.

[0091] It is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes but is not limited to the contents described in the drawings and the above specific embodiments. Any modification that does not deviate from the functional and structural principles of the present invention will be included in the scope of the claims.

Claims

1. A continuous coating device, characterized in that: The continuous coating device comprises: At least one first coating chamber (21), a material source (22) being arranged at the bottom of the first coating chamber, the first coating chamber comprising a first side wall and a second side wall, the first side wall being provided with a first inlet, and the second side wall being provided with a first outlet; An atomic layer deposition chamber (31), the atomic layer deposition chamber comprising a spray module (32), the spray module comprising a gas outlet surface, the spray module being arranged at the bottom of the atomic layer deposition chamber, the gas outlet surface facing the top of the atomic layer deposition chamber, the atomic layer deposition chamber comprising a third side wall and a fourth side wall, the third side wall being provided with a second inlet, and the fourth side wall being provided with a second outlet; A transmission device is used to transport a carrier carrying a substrate through the first entrance, the first coating chamber, the first outlet, the second entrance, the atomic layer deposition chamber and the second outlet in sequence, the first outlet corresponds to the second entrance and is selectively connected, so that the first coating chamber and the atomic layer deposition chamber coat the lower surface of the substrate in sequence through the transmission device.

2. The continuous coating device according to claim 1, characterized in that: The first side wall is disposed opposite to the second side wall, the third side wall is disposed opposite to the fourth side wall, and the first inlet, the first outlet, the second inlet and the second outlet have the same height.

3. The continuous coating device according to claim 2, characterized in that: The transmission device comprises a first carrier transmission device (23) and a second carrier transmission device (33), wherein the first carrier transmission device is used to drive the carrier to translate in the first coating chamber, and the second carrier transmission device is used to drive the carrier to translate in the atomic layer deposition chamber, and the first carrier transmission device is at the same height as the second carrier transmission device.

4. The continuous coating device according to claim 3, characterized in that: The first carrier transmission device includes a plurality of first transmission mechanisms, and the second carrier transmission device includes a plurality of second transmission mechanisms. The side walls of the first coating chamber and the atomic layer deposition chamber are both provided with a plurality of transmission holes. The first transmission mechanism is inserted into the transmission hole of the first coating chamber to form a first transmission wheel, and the second transmission mechanism is inserted into the transmission hole of the atomic layer deposition chamber to form a second transmission wheel. The first transmission wheel and / or the second transmission wheel are used to carry and transmit the carrier, and the bearing surface height of the first transmission wheel is consistent with the bearing surface height of the second transmission wheel.

5. The continuous coating device according to claim 4, characterized in that: The second transmission mechanism also includes multiple synchronous wheels, synchronous belts and multiple auxiliary transmission parts. The multiple synchronous wheels are arranged at intervals along the transmission direction on the outside of the atomic layer deposition chamber, and the auxiliary transmission parts are arranged between adjacent synchronous wheels. Any adjacent synchronous wheels and the auxiliary transmission parts therebetween are connected by the synchronous belt sleeve so that the multiple synchronous wheels can be transmitted synchronously.

6. The continuous coating device according to claim 4, characterized in that: The second transmission wheel includes an extension portion, a carrier plate contact portion and a limiting portion, wherein the extension portion, the carrier plate contact portion and the limiting portion are arranged and connected along the axial direction of the second transmission wheel, the limiting portion is arranged between the extension portion and the carrier plate contact portion, the carrier plate contact portion is used to carry and transmit the carrier plate, and the outer diameter of the limiting portion is larger than the outer diameter of the carrier plate contact portion, so that the limiting portion limits the carrier plate in the width direction.

7. The continuous coating device according to claim 4, characterized in that: The edge of the spray module is provided with a plurality of mounting notches, and the plurality of mounting notches are arranged at intervals along the transmission direction. The plurality of mounting notches correspond one-to-one to the plurality of second transmission wheels, and the shape of the mounting notches matches the second transmission wheel, so that there is a gap between the spray module and the second transmission wheel.

8. The continuous coating device according to claim 1, characterized in that: The spray module further includes a plurality of support and stop members, which are disposed between the spray module and the bottom surface of the atomic layer deposition chamber and are used to support the spray module and to ensure a set interval between the spray module and the carrier.

9. The continuous coating device according to claim 8, characterized in that: The support limiter includes a plurality of limit rods and a plurality of adjustment mechanisms, and the spray module includes a plurality of first limit holes. The first end of the limiting rod is fixedly connected to the bottom of the atomic layer deposition chamber, and the second end of the limiting rod is movably connected to the spray module through the first limiting hole, so that the first limiting hole limits the spray module. Two ends of the adjustment mechanism are fixedly connected to the bottom of the atomic layer deposition chamber and the spray module respectively, and the adjustment structure is used to adjust the distance between the spray module and the carrier.

10. The continuous coating device according to claim 1, characterized in that: The atomic layer deposition chamber further comprises an upper chamber cover (8) and a heating module (5), the upper chamber cover being used to close the atomic layer deposition chamber from the top of the atomic layer deposition chamber, and the heating module (5) being arranged on the upper chamber cover.

11. The continuous coating device according to claim 10, characterized in that: The heating module includes multiple heating elements and multiple heating plates. The multiple heating elements are fixedly connected to the upper chamber cover and the heating plates. The heating elements are used to transfer electrical energy from the outside to the atomic layer deposition chamber to heat the heating plates. The multiple heating plates are arranged along the transmission direction.

12. The continuous coating device according to claim 1, characterized in that: The continuous coating device further comprises a vacuum system (4) and a transmission valve (1c), wherein the first outlet and the second inlet are connected via the transmission valve (1c). The vacuum system includes a plurality of vacuum pipelines, and the plurality of vacuum pipelines are respectively connected to the first coating chamber and the atomic layer deposition chamber, so that when the vacuum degrees of the first coating chamber and the atomic layer deposition chamber are consistent, the transfer valve can be opened, and the carrier passes through the first outlet through the transfer device and then enters the atomic layer deposition chamber from the second inlet through the transfer valve.

13. The continuous coating device according to claim 12, characterized in that: The size of the transfer valve along the transfer direction is smaller than the size of the carrier along the transfer direction, so that when the carrier is transferred out of the first outlet by the transfer device, the two ends of the carrier can be respectively located in the first coating chamber and the atomic layer deposition chamber and are simultaneously carried and transmitted by the transfer device.

14. The continuous coating device according to claim 12, characterized in that: The vacuum pipeline includes an exhaust pipe, which is arranged on the lower side of the spray module in the atomic layer deposition chamber. A plurality of the exhaust pipes are arranged at intervals along the transmission direction. The exhaust pipe includes a plurality of exhaust ports, so that the gas exhausted from the spray module is discharged from the lower side through the exhaust ports.

15. The continuous coating device according to any one of claims 1 to 14, characterized in that: The continuous coating device also includes a feed chamber (10), the feed chamber includes a carrier feed transmission device (10a), the feed chamber also includes a fifth side wall and a sixth side wall arranged opposite to each other, the fifth side wall is provided with a feed port, the sixth side wall is provided with a transfer entrance, the feed port and the transfer entrance correspond to the first entrance or the second entrance and have the same height, so that the carrier can pass through the feed port through the carrier feed transmission device to enter the feed chamber, and can pass through the transfer entrance to leave the feed chamber and enter the first coating chamber and / or the atomic layer deposition chamber.

16. The continuous coating device according to any one of claims 1 to 14, characterized in that: The continuous coating device also includes a discharge chamber (11), which includes a carrier plate discharge transmission device and a seventh side wall and an eighth side wall arranged opposite to each other, the seventh side wall is provided with a transfer outlet, and the eighth side wall is provided with a discharge port, the discharge port and the transfer outlet correspond to the first outlet or the second outlet and have the same height, so that the carrier plate can pass through the carrier plate discharge transmission device through the transfer outlet to enter the discharge chamber, and can pass through the discharge port to leave the discharge chamber.

17. A continuous coating method, characterized in that: The continuous coating device according to any one of claims 1 to 16 comprises: Providing an initial carrier, the initial carrier carrying a plurality of substrates, the substrates comprising a front side and a back side; The initial carrier is introduced into the first coating chamber from the first entrance through the transmission device, and the back side of the substrate is subjected to a first coating process to obtain a first carrier with a substrate having a first film layer deposited on the back side; The first carrier is transferred from the first outlet through the transfer device and transferred from the second inlet to the atomic layer deposition chamber, and the back side of the substrate is subjected to atomic layer deposition to obtain a second carrier with a second film layer substrate deposited on the back side, and the second film layer and the first film layer are stacked on the back side of the substrate; The second carrier is transferred out from the second outlet through the transfer device to complete the continuous coating.

18. The continuous coating method according to claim 17, characterized in that: The first coating process includes physical vapor deposition and / or chemical vapor deposition.

19. The continuous coating method according to any one of claims 17 or 18, characterized in that: The atomic layer deposition process includes time-isolated atomic layer deposition or space-isolated atomic layer deposition.

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