A semiconductor process apparatus and a gas distribution assembly

Abstract

The application relates to the technical field of semiconductor process, in particular to a semiconductor process equipment and a gas distribution assembly. Since the gas distribution assembly has at least two gas distribution channels, the driving magnetic part in the gas distribution valve structure can drive the driven magnetic part to move, the driven magnetic part changes the flow area of the gas distribution channel, thereby adjusting the gas flow in the gas distribution channel and changing the distribution mode of the gas. Compared with the current fixed gas distribution mode, the gas distribution mode in the gas distribution assembly can be adjusted, which can better adapt to different processes and materials and different gas requirements, and the problem that the current gas distribution mode in the gas distribution system is not suitable for different gas requirements is solved. In addition, the driving magnetic part drives the driven magnetic part through the magnetic force of the driven magnetic part, which can reduce the wear between parts and enhance the stability of the equipment.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor process, in particular to a semiconductor process equipment and a gas distribution assembly. BACKGROUND

[0002] In the semiconductor manufacturing process, the flow, flow direction and distribution uniformity of the gas sprayed into the reaction chamber of the semiconductor process equipment directly affect the processing precision and product quality such as etching and thin film deposition. The traditional gas distribution system usually adopts fixed gas outlet hole structure, which is difficult to meet the flexible needs of different processes.

[0003] In the current gas distribution structure of the semiconductor process equipment, the gas is introduced from the external gas source into the reaction chamber, and the gas is distributed to the reaction chamber according to the pre-designed gas distribution hole. The shape and position of the distribution hole on the gas distribution disc determine the gas distribution mode. This fixed gas distribution mode has poor adaptability to the gas needs of different processes and materials. SUMMARY

[0004] The purpose of the present application is to provide a gas distribution assembly for a semiconductor process equipment to improve the problem of poor adaptability of the current gas distribution mode of the gas distribution system to different gas needs.

[0005] In addition, the purpose of the present application is also to provide a semiconductor process equipment using the above-mentioned gas distribution assembly.

[0006] In a first aspect, a gas distribution assembly is provided in an embodiment, comprising:

[0007] An inlet cover having an inlet hole for gas to enter;

[0008] A gas distribution disc having at least two gas distribution holes for spraying gas to the reaction chamber of the semiconductor process equipment; the inlet cover and the gas distribution disc are arranged in the thickness direction of the gas distribution disc; the gas distribution assembly has at least two gas distribution channels connecting the gas distribution holes and the inlet hole;

[0009] And a gas distribution valve structure comprising a driving magnetic part and a driven magnetic part, the driving magnetic part can drive the driven magnetic part to move through the magnetic force action between the driving magnetic part and the driven magnetic part, so that the driven magnetic part changes the flow area of the gas distribution channel to adjust the gas flow in the gas distribution channel.

[0010] Further, in an embodiment, the active magnetic member is located on a side of the gas inlet cover opposite to the gas distribution plate, the driven magnetic member is arranged in a direction of thickness of the gas inlet cover away from the active magnetic member, and the driven magnetic member is located in the gas distribution assembly, and the gas inlet cover separates the driven magnetic member from the active magnetic member.

[0011] Further, in an embodiment, the driven magnetic member comprises a driven magnetic ring, the active magnetic member comprises an active magnetic ring, and the driven magnetic ring is coaxially arranged with the active magnetic ring; the active magnetic ring drives the driven magnetic ring to rotate to change the flow area of the gas distribution passage.

[0012] Further, in an embodiment, the gas distribution passage comprises a ring passage and an adjusting passage, at least two of the gas distribution holes are in communication with the same ring passage; the ring passage is in communication with the gas inlet hole through the adjusting passage; the ring passage of each gas distribution passage is concentrically arranged; each adjusting passage has an adjusting opening for gas to enter, the adjusting opening of each adjusting passage is annularly arranged, and the driven magnetic member adjusts the gas flow in the gas distribution passage by adjusting the flow area of the adjusting opening.

[0013] Further, in an embodiment, the driven magnetic member comprises a ball, and the ball is used to block the adjusting opening to close the adjusting passage.

[0014] The ball is fixed with the driven magnetic ring, the ball is an elastic ball to block the adjusting opening by elastic deformation, or the ball is movably connected with the driven magnetic ring, and the ball can move relative to the driven magnetic ring to open and close the adjusting opening.

[0015] Further, in an embodiment, the gas distribution assembly comprises a gas guide plate, the gas guide plate is detachably installed between the gas inlet cover and the gas distribution plate, the driven magnetic member is installed in the gas guide plate, and at least part of the gas distribution passage is located in the gas guide plate.

[0016] Further, in an embodiment, the gas distribution assembly comprises an external driving mechanism to drive the active magnetic member to move.

[0017] Further, in an embodiment, at least one gas distribution passage is a first gas distribution passage, at least one gas distribution passage is a second gas distribution passage, the driven magnetic member has a first position in a movement stroke to open the first gas distribution passage and the second gas distribution passage, has a second position to open the first gas distribution passage and close the second gas distribution passage, and has a third position to open the second gas distribution passage and close the first gas distribution passage.

[0018] Further, in an embodiment, the flow area of the at least two gas distribution passages is adjusted by the same driven magnetic member.

[0019] In a second aspect, in an embodiment, a semiconductor processing apparatus is provided, comprising a reaction chamber and a gas distribution assembly as described in any embodiment of the first aspect.

[0020] According to the gas distribution assembly of the above-mentioned embodiments, since the gas distribution assembly has at least two gas distribution passages, the driving magnetic member in the gas distribution valve structure can drive the driven magnetic member to move, so that the driven magnetic member changes the flow area of the gas distribution passage, thereby adjusting the gas flow in the gas distribution passage and changing the distribution mode of the gas. Compared with the current fixed gas distribution mode, the gas distribution mode in the gas distribution assembly of the present application can be adjusted, which can better adapt to different processes and materials with different gas requirements, and improve the problem that the current gas distribution system has poor adaptability to different gas requirements. In addition, the driving magnetic member drives the driven magnetic member through the magnetic force, which can reduce the wear between parts and enhance the stability of the equipment. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 FIG. 1 is a schematic view of the position of the gas distribution assembly and the reaction chamber in an embodiment;

[0022] Figure 2 FIG. 2 is a sectional view of the gas distribution assembly and the reaction chamber in an embodiment;

[0023] Figure 3 FIG. 3 is an exploded view of the gas distribution assembly and the reaction chamber in an embodiment; Figure 1

[0024] FIG. 4 is a schematic view of the flow direction of the gas flow in the gas distribution passage in an embodiment; Figure 4

[0025] FIG. 5 is a schematic view of the structure of the gas distribution valve in an embodiment; Figure 5

[0026] FIG. 6 is a schematic view of the structure of the gas distribution valve in another embodiment; Figure 6

[0027] FIG. 7 is a sectional view of the gas distribution assembly in another embodiment. Figure 7

[0028] ​Corresponding feature name list of the reference signs in the figure: 1, reaction chamber; 11, reaction chamber shell; 2, gas distribution assembly; 21, gas inlet cover; 211, gas inlet hole; 212, gas inlet joint; 213, gas inlet cover plate; 2131, magnetic ring positioning groove; 22, gas distribution disc; 221, gas distribution hole; 222, sealing ring; 223, sealing ring; 23, gas distribution valve structure; 231, driving magnetic part; 2311, driving magnetic ring; 232, driven magnetic part; 2321, driven magnetic ring; 2322, ball; 2323, magnetic ring hole; 24, gas distribution channel; 241, first gas distribution channel; 242, second gas distribution channel; 243, third gas distribution channel; 244, annular channel; 245, adjusting channel; 2451, adjusting port; 25, connecting rib; 26, gas guide disc; 261, disc body; 262, gas guide cover plate; 3, bearing seat.

[0029] Explanation of the bracketed reference signs in the drawings: In the bracketed reference signs in the drawings, the feature referred to by the reference sign is both the feature represented by the number in the bracket and the feature represented by the number outside the bracket. DETAILED DESCRIPTION

[0030] The application will be described in further detail below with reference to the drawings. Like elements in different embodiments are denoted by like reference numerals. In the following embodiments, many details are described in order to provide a better understanding of the application. However, a person skilled in the art can easily recognize that some features can be omitted in different cases, or can be replaced by other elements, materials, methods. In some cases, some operations related to the application are not shown or described in the specification in order to avoid the core part of the application being overwhelmed by too much description, and a person skilled in the art can fully understand the related operations according to the description in the specification and the general technical knowledge in the art.

[0031] In addition, the features, operations or characteristics described in the specification can be combined in any appropriate manner to form various embodiments. At the same time, the steps or actions in the method description can also be sequentially adjusted or adjusted in a manner that is obvious to a person skilled in the art. Therefore, the various sequences in the specification and the drawings are only for the purpose of clearly describing a certain embodiment, and do not mean that the sequence is necessary, unless otherwise stated that a certain sequence must be followed.

[0032] The serial numbers of the components in this paper, such as "first", "second", etc., are only used to distinguish the described objects, and do not have any sequence or technical meaning. Unless otherwise specified, the "connection" and "coupling" in this application include direct connection, indirect connection and contact connection (coupling) and the like.

[0033] The embodiments described in the detailed description can be combined in any suitable manner, for example, different embodiments can be combined to form different embodiments, without departing from the scope of the present application, and various possible combinations of the embodiments are not described again in order to avoid unnecessary repetition.

[0034] In order to solve the problem that the fixed gas distribution mode cannot adapt to different gas distribution requirements in the current gas distribution structure, the gas distribution valve structure is adopted to adjust the gas flow of the gas distribution channel and change the gas distribution mode of the gas distribution assembly, so as to adapt to different gas distribution requirements. The gas distribution assembly and the semiconductor process equipment of the present application will be described in detail below with reference to the accompanying drawings.

[0035] Please refer to Figure 1 , the semiconductor process equipment includes a reaction chamber 1 and a gas distribution assembly 2, and the gas distribution assembly 2 is used to supply gas to the reaction chamber 1. In one embodiment, please refer to Figure 1 , the gas distribution assembly 2 is located at the top of the reaction chamber 1. In one embodiment, please refer to Figure 1 , the reaction chamber 2 has a carrier seat 3 for carrying a wafer. Through the semiconductor processing equipment, etching, chemical vapor deposition, physical vapor deposition and other process treatments can be carried out.

[0036] Please refer to Figures 1 to 7 , the gas distribution assembly 2 includes a gas inlet cover 21, a gas distribution disc 22 and a gas distribution valve structure 23, the gas inlet cover 21 has a gas inlet hole 211 for gas to enter. The gas inlet cover 21 and the gas distribution disc 22 are arranged in the thickness direction of the gas distribution disc 22, and the gas distribution disc 22 has at least two gas distribution holes 221 for spraying gas to the reaction chamber 1 of the semiconductor process equipment. The gas distribution assembly 2 has at least two gas distribution channels 24, and the gas distribution channels 24 connect the gas distribution holes 221 and the gas inlet holes 211. After the gas enters the gas distribution channel 24 from the gas inlet hole 211, it enters the gas distribution hole 221 through the gas distribution channel 24, and then enters the reaction chamber through the gas distribution hole 221.

[0037] In order to adapt to different gas distribution requirements, the gas distribution valve structure 23 includes a driving magnetic part 231 and a driven magnetic part 232, and the driving magnetic part 231 can drive the driven magnetic part 232 to move through the magnetic force action between the driving magnetic part 231 and the driven magnetic part 232. The driven magnetic part 232 is used to change the flow area of the gas distribution channel 24 to adjust the gas flow in the gas distribution channel 24.

[0038] Due to the fact that the gas distribution assembly 2 has at least two gas distribution channels 24, the active magnetic part 231 in the gas distribution valve structure 23 can drive the driven magnetic part 232 to move, so that the driven magnetic part 232 changes the flow area of the gas distribution channel 24, thereby adjusting the gas flow in the gas distribution channel 24 and changing the distribution mode of the gas. Compared with the current fixed gas distribution mode, the gas distribution mode in the gas distribution assembly 2 in the present application can be adjusted, which can better adapt to different processes and materials with different gas requirements, and improve the problem that the current gas distribution system has poor adaptability to different gas requirements. In addition, the active magnetic part 231 drives the driven magnetic part 232 through the magnetic force of the driven magnetic part 232, which can reduce the wear between parts and enhance the stability of the equipment.

[0039] In order to improve the uniformity of gas distribution, the layout of the gas distribution holes 221 on the gas distribution disc 22 can adopt a variety of feasible schemes. For example, in one embodiment, please refer to Figure 2 and Figure 4 The annularly distributed gas distribution holes 221 form a gas distribution hole group, and the number of the gas distribution hole groups is two or more. In one embodiment, please refer to Figure 4 The number of the gas distribution hole groups is three. In some other embodiments, the number of the gas distribution hole groups can also be two, four or five. In some application scenarios, please refer to Figure 4 In order to make the gas flow distribution of the central region and the edge region of the gas distribution disc 22 more uniform, the flow area of the gas distribution hole 221 close to the center of the gas distribution disc 22 is smaller than the flow area of the gas distribution hole 221 far from the center of the gas distribution disc 22, that is, the closer the gas distribution hole 221 is to the center of the gas distribution disc 22, the smaller the flow area is, and the farther the gas distribution hole 221 is from the center of the gas distribution disc 22, the larger the flow area is. For example, in one embodiment not shown, the gas distribution holes 221 are arranged in an array on the gas distribution disc 22, and the gas distribution holes 221 are uniformly arranged on the gas distribution disc 22.

[0040] In one embodiment, please refer to Figure 2 In order to facilitate the operation of the active magnetic part 231, the active magnetic part 231 is located on the side of the gas inlet cover 21 away from the gas distribution disc 22, the driven magnetic part 232 is arranged in the gas distribution assembly 2 and spaced apart from the active magnetic part 231 in the thickness direction of the gas inlet cover 21, and the gas inlet cover 21 separates the driven magnetic part 232 and the active magnetic part 231. The active magnetic part 231 is located on the outside of the gas inlet cover 21, which facilitates the operation or connection of the driving mechanism of the active magnetic part 231.

[0041] In an embodiment not shown, the gas distribution assembly 2 comprises an external driving mechanism to drive the active magnetic member 231 to move. As to the form of the external driving mechanism, in an embodiment, the external driving mechanism comprises a motor to drive the active magnetic member 231 to rotate, which is suitable for automatic operation. In an embodiment, in the case of high precision requirement, the motor can be a servo motor to realize accurate rotation angle control.

[0042] In an embodiment, the external driving mechanism is connected with an intelligent control system, which can realize automatic gas distribution adjustment and process parameter setting, further improving the controllability and precision of the process.

[0043] In some other embodiments, in addition to driving the active magnetic member 231 by the external driving mechanism, the external magnetic member can also be manually rotated.

[0044] In an embodiment, please refer to Figures 2 to 4 , the flow area of the at least two gas distribution channels 24 is adjusted by the same driven magnetic member 232. Through the linkage control of the active magnetic member 231 and the driven magnetic member 232, the at least two gas distribution channels 24 are dynamically adjusted, which can realize real-time adjustment of the gas distribution and adjustment of the gas distribution holes 221 in different areas.

[0045] Specifically, in an embodiment, please refer to Figure 2 and Figure 4 , the at least one gas distribution channel 24 is a first gas distribution channel 241, the at least one gas distribution channel 24 is a second gas distribution channel 242, the driven magnetic member 232 has a first position in the movement stroke to open the first gas distribution channel 241 and open the second gas distribution channel 242, a second position to open the first gas distribution channel 241 and close the second gas distribution channel 242, and a third position to open the second gas distribution channel 242 and close the first gas distribution channel 241.

[0046] Further, in an embodiment, please refer to Figure 2 and Figure 4 , the at least one gas distribution channel 24 is a third gas distribution channel 243, and at least one of the first gas distribution channel 241, the second gas distribution channel 242 and the third gas distribution channel 243 is in an open state. According to the use requirement, any one or any two of the first gas distribution channel 241, the second gas distribution channel 242 and the third gas distribution channel 243 can be selected to be closed. Of course, all of the first gas distribution channel 241, the second gas distribution channel 242 and the third gas distribution channel 243 can also be selected to be opened. In some other embodiments, the number of the gas distribution channels 24 can be increased or decreased according to the requirement, such as four, five, six, etc., in addition to the two or three provided in the above embodiments.

[0047] Regarding the form of the active magnetic member 231 and the driven magnetic member 232, in an embodiment, please refer to Figure 2 and Figure 3 The driven magnetic member 232 includes a driven magnetic ring 2321, and the active magnetic member 231 includes an active magnetic ring 2311. The driven magnetic ring 2321 is coaxially arranged with the active magnetic ring 2311. The active magnetic ring 2311 drives the driven magnetic ring 2321 to rotate to change the flow area of the air distribution channel 24. Specifically, in an embodiment, please refer to Figure 2 and Figure 3 The flow area of each air distribution channel 24 is adjusted by the driven magnetic ring 2321.

[0048] In an embodiment, the active magnetic member 231 and the driven magnetic member 232 are both made of permanent magnetic material. In an embodiment, please refer to Figure 2 and Figure 4 The active magnetic ring 2311 and the driven magnetic ring 2321 are both multi-pole distributed magnetic rings. In the circumferential direction of the magnetic ring, the multi-pole distributed magnetic ring includes a plurality of N poles and S poles arranged alternately. In the rotation process of the active magnetic ring 2311, the driven magnetic ring 2321 is driven to rotate by using the principle of repulsion between same poles and attraction between different poles.

[0049] In an embodiment, please refer to Figure 2 The active magnetic ring 2311 and the driven magnetic ring 2321 are arranged in the thickness direction of the air inlet cover 21. In some other embodiments, the active magnetic ring 2311 and the driven magnetic ring 2321 can also be nested together, such as the active magnetic ring 2311 being at the periphery of the driven magnetic ring 2321. In some other embodiments, the active magnetic member 231 and the driven magnetic member 232 can also adopt a magnetic disk structure in addition to the magnetic ring mode.

[0050] In some other embodiments, in addition to driving the driven magnetic member 232 to rotate, the active magnetic member 231 can also drive the driven magnetic member 232 to move linearly reciprocatingly.

[0051] In an embodiment, please refer to Figure 2 and Figure 3 In order to facilitate the installation of the active magnetic ring 2311, the air inlet cover 21 includes an air inlet connector 212 and an air inlet cover plate 213. The air inlet connector 212 is fixed on the air inlet cover plate 213. The air inlet cover plate 213 has a magnetic ring positioning groove 2131. At least part of the active magnetic ring 2311 is installed in the magnetic ring positioning groove 2131. The magnetic ring positioning groove 2131 positions the active magnetic ring 2311 to facilitate the installation of the active magnetic ring 2311.

[0052] In an embodiment, please refer to Figure 2 , Figure 4 and Figure 5The air distribution channel 24 comprises an annular channel 244 and an adjusting channel 245, and the at least two air distribution holes 221 are communicated with the same annular channel 244. The annular channel 244 is communicated with the air inlet hole 211 through the adjusting channel 245, and the annular channel 244 of each air distribution channel 24 is arranged from the center to the edge of the air distribution disc 22. Each adjusting channel 245 has an adjusting opening 2451 for gas to enter, and the adjusting openings 2451 of each adjusting channel 245 are arranged in an annular shape. The driven magnetic member 232 adjusts the air flow in the air distribution channel 24 by adjusting the flow area of the adjusting opening 2451. The adjusting opening 2451 is introduced to the position of the driven magnetic member 232 through the adjusting channel 245, which facilitates the driven magnetic member 232 to control the plurality of air distribution channels 24.

[0053] In some other embodiments, in addition to the annular channel 244, the air distribution channel 24 can also adopt a long strip-shaped channel, which can be a straight line type channel or a curved channel.

[0054] It should be noted that the annular channel 244 in the present application can not only be a circular annular channel 244, but also other closed channels such as square channels, elliptical channels, polygonal channels, etc.

[0055] In one embodiment, please refer to Figures 2 to 4 The air distribution disc 22 is a circular disc. In some other embodiments, the air distribution disc 22 can also be an elliptical disc, a polygonal disc, etc.

[0056] Regarding the specific form of the annular channel 244, in one embodiment, please refer to Figure 2 , Figure 4 and Figure 5 The annular channel 244 is provided with a connecting rib 25. In one embodiment, in order to reduce the influence of the connecting rib 25 on the airflow, the same annular channel 244 corresponds to a plurality of adjusting channels 245, and the adjusting openings 2451 of the plurality of adjusting channels 245 are adjusted by the driven magnetic member 232. In one embodiment, the adjusting channel 245 communicated with the annular channel 244 on the outer side passes through the connecting rib 25 in the annular channel 244 on the inner side, that is, the connecting rib 25 on the inner side also serves as the carrier of the adjusting channel 245. Specifically, in one embodiment, please refer to Figure 4 and Figure 5 The number of connecting ribs 25 in one annular channel 244 is four.

[0057] In one embodiment, as another deformation mode of the annular channel 244, the connecting rib 25 in the annular channel 244 separates the annular channel 244 into a plurality of independent long strip-shaped channels, where the independence means that the gas between adjacent channels does not flow to each other.

[0058] As to the cooperation between the driven magnetic part 232 and the adjusting port 2451, one embodiment is shown in Fig. 2B Figures 2 to 5 The driven magnetic part 232 includes a ball 2322, which is used to block the adjusting port 2451 to close the adjusting passage 245. Another embodiment is shown in Fig. 2C Figure 6 and Figure 7 The side surface of the driven magnetic ring 2321 is a ring surface, which can block the adjusting port 2451, and the driven magnetic ring 2321 can directly block the adjusting port 2451 to close the adjusting passage 245. In order to open the adjusting port 2451, the driven magnetic ring 2321 has a magnetic ring hole 2323, one end of which is on the ring surface that blocks the adjusting port 2451. When the adjusting passage 245 needs to be opened, the driven magnetic ring 2321 is rotated so that the magnetic ring hole 2323 is communicated with the adjusting port 2451, and the adjusting passage 245 is communicated with the gas inlet hole 211. In one embodiment, the driven magnetic ring 2321 can also block part of the adjusting port 2451 to reduce the flow area of the gas distribution passage 24. In some other embodiments, in order to facilitate processing, the gas distribution assembly can also include an adjusting ring fixed with the driven magnetic ring 2321, which blocks the adjusting port 2451 or changes the flow area of the adjusting port 2451.

[0059] Based on the above, it should be noted that the change of the flow area of the gas distribution passage 24 described in the present application includes not only reducing the flow area of the gas distribution passage 24 to a certain value, but also closing the gas distribution passage 24, i.e. reducing the flow area of the gas distribution passage 24 to zero. For example, when the driven magnetic ring 2321 blocks the adjusting port 2451 by the ring surface, the flow area of the gas distribution passage 24 is adjusted by changing the area of the adjusting port 2451 communicated with the hole of the magnetic ring hole 2323. When the adjusting port 2451 is misaligned with the hole of the magnetic ring hole 2323, the adjusting port 2451 is no longer communicated with the magnetic ring hole 2323, and at this time, the adjusting port 2451 is closed, and the corresponding gas distribution passage 24 is closed.

[0060] When the ball 2322 is used, the ball 2322 and the driven magnetic ring 2321 can adopt various feasible connection relationships. For example, one embodiment is shown in Fig. 2D Figure 2 and Figure 3The ball 2322 is fixed with the driven magnetic ring 2321, and the ball 2322 is an elastic ball 2322 to block the adjusting port 2451 by elastic deformation. The ball 2322 can be made of polytetrafluoroethylene or rubber. The ball 2322 can be fixed with the driven magnetic ring 2321 by clamping, bonding or other methods, or a magnetic sheet can be fixed on the elastic ball 2322 to magnetically attract the driven magnetic ring 2321. In another embodiment not shown, the ball 2322 is movably connected with the driven magnetic ring 2321, and the ball 2322 can move relative to the driven magnetic ring 2321 to open or close the adjusting port 2451. When the adjusting port 2451 needs to be opened, the driven magnetic ring 2321 is rotated to pull the ball 2322 out of the adjusting port 2451. When the adjusting port 2451 needs to be blocked, the driven magnetic ring 2321 is rotated to make the ball 2322 enter the adjusting port 2451. In some cases, the ball 2322 can be connected with the driven magnetic ring 2321 by an elastic coupling or an elastic shaft. Of course, the ball 2322 can also be connected with the ball 2322 by a movable swing lever.

[0061] In an embodiment, in order to facilitate the driven magnetic ring 2321 to drive the ball 2322 to move, the diameter of the ball 2322 should be much larger than the diameter of the adjusting port 2451, for example, the diameter of the ball 2322 is twice the diameter of the adjusting port 2451. In this way, the ball 2322 is more easily pulled out of the adjusting port 2451.

[0062] It should be noted that the sealing of the ball 2322 and the adjusting port 2451 relies not only on gravity but also on the vacuum effect when the reaction chamber 1 is evacuated. Under the action of vacuum, the ball 2322 is clamped with the adjusting port 2451, and when the reaction gas is injected after the vacuum in the reaction chamber 1 is completed, the ball 2322 and the adjusting port 2451 can remain in a sealed state. When the driving magnetic ring 2311 rotates, the magnetic force between the driving magnetic ring 2311 and the driven magnetic ring 2321 drives the driven magnetic ring 2321 to move, and the driven magnetic ring 2321 pulls the ball 2322 out of the adjusting port 2451.

[0063] In order to facilitate the design of the gas distribution channel 24, in an embodiment, please refer to Figures 2 to 4 The gas distribution assembly 2 includes a gas guide disc 26, which is detachably installed between the gas inlet cover 21 and the gas distribution disc 22. The driven magnetic member 232 is installed in the gas guide disc 26, and at least part of the gas distribution channel 24 is in the gas guide disc 26. In this way, the gas guide disc 26, the gas inlet cover 21 and the gas distribution disc 22 can be detached and machined separately, which facilitates the formation of the gas distribution channel 24. In addition, according to the process requirements, the appropriate size of the parts can be adjusted and replaced, which is convenient for the maintenance of the assembly and reduces the use cost.

[0064] Specifically, in one embodiment, referring to Figure 2 and Figure 3 In order to facilitate the sealing of the gas distribution plate 22 and the gas guide plate 26, the gas distribution plate 22 is provided with a sealing ring 222, and the sealing ring 222 is sealed and matched with the gas guide plate 26 through a sealing ring 223. The gas distribution channel 24 is between adjacent sealing rings 222. The sealing ring 222 is fixed with the gas distribution plate 22 by welding, bonding or one-piece forming.

[0065] In some embodiments, referring to Figure 1 and Figure 2 The reaction chamber 1 has a reaction chamber shell 11, and the gas inlet cover 21, the gas guide plate 26 and the gas distribution plate 22 can be assembled together in various ways, such as bolt fastening, combined with quick disassembly design, convenient for on-site maintenance and replacement; for example, a sliding groove or plug-in buckle can be designed in the rack of the semiconductor process equipment to support the quick disassembly and precise positioning of the gas distribution assembly; for example, the buckle connection can also facilitate quick assembly and disassembly.

[0066] Regarding the assembly sequence, in one embodiment, the fixation is achieved by screwing the bolts through the gas inlet cover 21, the gas guide plate 26 and the gas distribution plate 22 into the reaction chamber shell 11; for example, after the gas inlet cover 21, the gas guide plate 26 and the gas distribution plate 22 are fixed together by bolts, clamping, bonding or interference assembly, etc., the whole is fixed with the reaction chamber shell 11. For example, the gas inlet cover 21 and the gas guide plate 26 can also be fixed together, and the whole is fixed with the gas distribution plate 22.

[0067] In some other embodiments, the gas distribution assembly 2 can also not have a gas guide plate 26, such as embedding the gas distribution channel 24 in the gas inlet cover 21 or the gas distribution plate 22, for example, the gas inlet cover 21 and the gas distribution plate 22 are fixed to form the gas distribution channel 24, and the corresponding driven magnetic member 232 is installed on the gas inlet cover 21 or the gas distribution plate 22 as needed.

[0068] In order to further facilitate the processing of the gas distribution plate 22, in one embodiment, referring to Figure 2 and Figure 3 The gas guide plate 26 includes a disc body 261 and a gas guide cover plate 262, and the gas guide cover plate 262 is between the disc body 261 and the gas guide plate 26. The gas guide cover plate 262 is sealed with the disc body 261 by welding. In some other embodiments, the gas guide cover plate 262 and the disc body 261 can also be fixed and sealed with the sealing ring 223 by bolt connection, welding, clamping, bonding or interference assembly, etc.

[0069] In one embodiment, in order to facilitate monitoring the state of the gas flow, the gas distribution assembly 2 includes gas sensors for detecting the flow rate and / or pressure of the gas, which are provided at the inlet holes 211 and / or at the outlet holes and / or in the gas distribution channels 24.

[0070] In summary, by using the gas distribution assembly with adjustable gas distribution, the opening and closing state of the gas distribution holes 221 can be precisely controlled, overcoming the uneven distribution phenomenon caused by the traditional fixed gas distribution hole 221 design. The precise arrangement of the gas distribution disc 26 and the gas distribution holes 221 significantly improves the uniformity of gas distribution during etching and thin film deposition, reducing the deposition rate difference between the center and the edge. The magnetic ring adjustment mechanism allows the equipment to flexibly adjust the outlet position and flow rate according to process requirements, achieving precise gas supply for different sizes and shapes of substrates. For example, for small-sized substrates (such as 2-inch and 4-inch wafers), only the gas distribution channels 24 near the center of the gas distribution disc 22 can be opened, concentrating the gas supply to the small-sized substrate located in the center and reducing unnecessary gas diffusion and waste. For large-sized substrates (such as 12-inch wafers), all gas distribution channels 24 can be opened, including those near the center of the gas distribution disc 22 and those far from the center of the gas distribution disc 22, to ensure uniform gas supply to each area of the large-sized substrate surface, improving the inconsistency of process results between the center and the edge.

[0071] The above application uses specific examples to illustrate the present application, which is only used to help understand the present application and does not limit the present application. For those skilled in the art to which the present application belongs, according to the idea of the present application, a number of simple deductions, deformations or substitutions can be made.

Claims

1. A gas distribution assembly, comprising: The gas distribution assembly comprises: an inlet cover having an inlet hole for gas to enter; a gas distribution plate having at least two gas distribution holes for gas to be injected into a reaction chamber of a semiconductor processing apparatus; the inlet cover and the gas distribution plate are arranged in a thickness direction of the gas distribution plate; the gas distribution assembly has at least two gas distribution passages connecting the gas distribution holes and the inlet hole; and a gas distribution valve structure comprising a driving magnetic member and a driven magnetic member, the driving magnetic member is capable of driving the driven magnetic member to move by magnetic force acting between the driving magnetic member and the driven magnetic member, so that the driven magnetic member changes the flow area of the gas distribution passages to adjust the gas flow in the gas distribution passages; the driven magnetic member comprises a driven magnetic ring, the driving magnetic member comprises a driving magnetic ring, the driven magnetic ring is coaxially arranged with the driving magnetic ring; the driving magnetic ring drives the driven magnetic ring to rotate to change the flow area of the gas distribution passages; the gas distribution passages comprise annular passages and adjusting passages, at least two of the gas distribution holes are communicated with the same annular passage; the annular passages are communicated with the inlet hole through the adjusting passages; the annular passages of each of the gas distribution passages are concentrically arranged; each of the adjusting passages has an adjusting hole for gas to enter, the adjusting holes of each of the adjusting passages are annularly arranged, the driven magnetic member adjusts the gas flow in the gas distribution passages by adjusting the flow area of the adjusting holes.

2. The gas distribution assembly of claim 1, wherein, The driving magnetic member is arranged on a side of the inlet cover away from the gas distribution plate, the driven magnetic member is spaced apart from the driving magnetic member in the thickness direction of the inlet cover, the driven magnetic member is arranged in the gas distribution assembly, and the inlet cover separates the driven magnetic member and the driving magnetic member.

3. The gas distribution assembly of claim 1 or 2, wherein, The driven magnetic member comprises a ball for blocking the adjusting hole to close the adjusting passage; the ball is fixed to the driven magnetic ring, the ball is an elastic ball to block the adjusting hole by elastic deformation, or the ball is movably connected to the driven magnetic ring, and the ball is capable of moving relative to the driven magnetic ring to open and close the adjusting hole.

4. The gas distribution assembly of claim 1 or 2, wherein, The gas distribution assembly comprises a guide plate which is detachably installed between the inlet cover and the gas distribution plate, the driven magnetic member is installed in the guide plate, and at least part of the gas distribution passages is arranged in the guide plate.

5. The gas distribution assembly of claim 1 or 2, wherein, The gas distribution assembly comprises an external driving mechanism for driving the driving magnetic member to move.

6. The gas distribution assembly of claim 1 or 2, wherein, At least one of the gas distribution passages is a first gas distribution passage, and at least one of the gas distribution passages is a second gas distribution passage; the driven magnetic member has a first position in a movement stroke of the driven magnetic member, at which the first gas distribution passage is opened and the second gas distribution passage is opened; the driven magnetic member has a second position in the movement stroke of the driven magnetic member, at which the first gas distribution passage is opened and the second gas distribution passage is closed; and the driven magnetic member has a third position in the movement stroke of the driven magnetic member, at which the second gas distribution passage is opened and the first gas distribution passage is closed.

7. The gas distribution assembly of claim 1 or 2, wherein, The flow areas of at least two of the gas distribution passages are adjusted by the same driven magnetic member.

8. A semiconductor processing apparatus comprising a reaction chamber and a gas distribution assembly according to any one of claims 1-7.

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