A surface plasma enhanced copper core wire

Abstract

The present invention discloses a surface plasma-enhanced copper core wire, relating to the technical field of electrical conductors. The present invention uses a first plasma treatment to obtain indium- and titanium-doped graphene on the surface of the copper core, allowing electrons to migrate from the interior of the copper body to the graphene for charge transport. The incorporation of metals enhances the interfacial bonding between the graphene and the copper substrate, thereby enhancing the durability of the copper core wire. Subsequently, a second plasma treatment is performed to form a continuous, dense protective film on the copper surface with graphene and indium, thereby achieving corrosion resistance. The graphene oxide and the titanium oxide that form fine particles can enhance the integrity of the copper substrate. Finally, a third plasma treatment is performed to infiltrate a high-entropy alloy, forming a high-hardness, fine-grained alloy layer on the surface. The modified and roughened graphene can enhance the surface bonding between the substrate and the high-entropy alloy, thereby greatly enhancing corrosion resistance and mechanical properties.

Description

Technical Field

[0001] The invention relates to the technical field of electric conductors, in particular to a surface plasma enhanced copper core wire. Background Art

[0002] Copper is widely used in modern industry and daily life, with applications spanning the decorative arts, metalworking, construction, electrical engineering, and defense industries. Copper plays a key role in emerging technologies such as 5G communications, new energy vehicles, and large-scale integrated circuits. Copper possesses numerous exceptional physical and chemical properties, including excellent ductility, good electrical conductivity, high durability, and recyclability. However, with the evolution of society and technology, the performance requirements for copper devices in specific environments are increasing, particularly regarding their oxidation and corrosion resistance. At high temperatures, in highly corrosive solutions, or in highly alkaline solutions, copper is susceptible to oxidation and corrosion, resulting in loss of surface gloss, structural damage, increased resistivity, and decreased ductility and hardness, severely impacting the performance of copper products and copper-containing devices. Therefore, alloying is essential to enhance the performance of copper. However, the introduction of alloying elements alters the microstructure of the copper matrix, thereby reducing its electrical and thermal conductivity. In most application environments, the failure of pure copper components often starts from the surface. Using surface modification technology to treat pure copper components can not only maintain their inherent electrical and thermal conductivity advantages, but also significantly reduce component failures caused by surface problems such as wear and corrosion. Traditional metal surface modification technologies, such as electroplating, vapor deposition, thermal spraying and laser cladding, play an irreplaceable role in their respective application fields, but they each have limitations. The electroplating process may produce harmful waste liquids and pollute the environment; vapor deposition efficiency is low, making it difficult to prepare thick film layers; the film layers prepared by thermal spraying and laser cladding have insufficient bonding strength with the substrate; while plasma technology can achieve material processing and conversion at lower temperatures, effectively reducing energy consumption and carbon emissions caused by energy production, and can precisely control the processing process of the target substance, reducing unnecessary side reactions and by-products. Summary of the Invention

[0003] The object of the present invention is to provide a surface plasma enhanced copper core wire to solve the problems existing in the prior art.

[0004] In order to solve the above technical problems, the present invention provides the following technical solution: a surface plasma enhanced copper core wire, comprising the following preparation steps:

[0005] (1) Indium salt, titanium salt and deionized water were mixed, stirred at 500-1500 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 10-20 min, and further fully mixed. The obtained solution was spin-coated on the surface of the copper wire, dried, and then subjected to the first plasma treatment to obtain a composite conductor;

[0006] (2) subjecting the composite conductor to a second plasma treatment to obtain an intermediate A;

[0007] (3) The intermediate A is subjected to a third plasma treatment to obtain a surface plasma enhanced copper core wire.

[0008] Furthermore, the copper wire in step (1) is a high-purity copper wire with a purity greater than 99.9% and a diameter of 0.1 to 0.15 mm.

[0009] Furthermore, the mass ratio of the indium salt, titanium salt, deionized water, and chitosan solution in step (1) is 0.1:0.2:2~6:50~100.

[0010] Furthermore, the indium salt in step (1) is at least one of indium nitrate, indium chloride, indium iodide, and indium sulfate; and the titanium salt is at least one of titanium nitrate, titanium tetrachloride, and titanic acid.

[0011] Furthermore, the first plasma treatment in step (1) is microwave plasma treatment.

[0012] Furthermore, the process parameters of the microwave plasma treatment are: working gas is nitrogen, flow rate is 40~80sccm, gas pressure is 1~3kPa, power is 1500~2500W, and time is 20~30min.

[0013] Furthermore, the second plasma treatment in step (2) is performed by placing the sample in a microwave plasma generator and performing low-temperature plasma treatment.

[0014] Furthermore, the process parameters of the low-temperature plasma treatment are: working gas is oxygen, pressure is 300-400 mTorr, power is 800-2000 W, microwave frequency is 2.4-2.5 GHz, and time is 60-100 s.

[0015] Furthermore, the third plasma treatment in step (3) is a double-layer glow plasma treatment.

[0016] Furthermore, the process parameters of the double-layer glow plasma treatment are: working gas is argon, target material is high entropy alloy target material, gas pressure is 20~50Pa, working distance is 10~20mm, source voltage is 800~850V, cathode voltage is 300~400V, and time is 1~5h.

[0017] Furthermore, the mass percentages of the high entropy alloy components are: tantalum 15%, manganese 10%, nickel 20%, chromium 25%, and titanium 30%.

[0018] Compared with the prior art, the beneficial effect achieved is that the present invention enhances the oxidation corrosion resistance and mechanical properties of the copper wire through tertiary plasma.

[0019] This invention relates to an innovative material processing technology that incorporates indium and titanium ions into a carbon precursor solution and performs a first plasma treatment to form indium- and titanium-doped graphene on the surface of a copper core. During this process, the metal, in its elemental form, exists between the graphene and the copper matrix, creating a conductive path that allows electrons to efficiently migrate from the copper interior into the graphene for charge transport. This structure not only reduces heat generation but also significantly enhances the interfacial bonding between the graphene and the copper matrix due to the metal incorporation, thereby improving the durability of the copper core wire. In particular, titanium and indium can form an alloy, further enhancing the overall performance of the matrix. The present invention uses a second plasma treatment to modify the surface of the composite conductor for oxidative activity. Using low-temperature plasma technology, the oxidized graphene, titanium, and indium form a continuous and dense protective film on the copper surface. This not only improves corrosion resistance, but also allows the graphene oxide and the resulting fine particles of titanium oxide to fill minor defects on the copper surface, thereby enhancing the integrity of the copper matrix. This process further enhances the corrosion resistance of the matrix and improves its mechanical properties. Finally, the present invention uses a third plasma treatment, employing a double-layer glow plasma process, to enhance the mechanical properties of the copper material by infiltrating it with a high-entropy alloy. Simultaneously, a high-hardness, fine-grained alloy layer is formed on the surface, significantly improving the material's surface hardness and wear resistance. Furthermore, the modified and roughened graphene further enhances the surface bonding between the substrate and the high-entropy alloy, significantly increasing the conductor's corrosion resistance and mechanical properties. Through this series of processing steps, the present invention successfully produces a new composite conductor material with excellent overall performance. DETAILED DESCRIPTION

[0020] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0021] In order to more clearly illustrate the method provided by the present invention, the following examples are used to describe in detail the various index testing methods of the surface plasma enhanced copper core wire prepared in the following examples.

[0022] Example 1; (1) Indium nitrate, titanium nitrate and deionized water were mixed, stirred at 500 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 10 minutes, and further fully mixed. The obtained solution was spin-coated on the surface of a copper wire, and after drying, microwave plasma treatment was performed. The process parameters were as follows: working gas was nitrogen, flow rate was 40 sccm, pressure was 1 kPa, power was 1500 W, and time was 20 minutes to obtain a composite conductor; the mass ratio of the indium nitrate, titanium nitrate, deionized water and chitosan solution was 0.1:0.2:2:50; the chitosan solution was composed of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0023] (2) Placing the composite conductor in a microwave plasma generator for low-temperature plasma treatment, with oxygen as the working gas, a pressure of 300 mTorr, a power of 800 W, a microwave frequency of 2.4 GHz, and a time of 60 s, to obtain intermediate A;

[0024] (3) The intermediate A was subjected to double-layer glow plasma treatment with the following process parameters: working gas was argon, target material was a high entropy alloy target, gas pressure was 20 Pa, working distance was 10 mm, source voltage was 800 V, cathode voltage was 300 V, and time was 1 h, to obtain a surface plasma enhanced copper core wire; the mass percentage of the high entropy alloy components was: tantalum 15%, manganese 10%, nickel 20%, chromium 25%, and titanium 30%.

[0025] Example 2; (1) Indium nitrate, titanium nitrate and deionized water were mixed, stirred at 1100 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 15 minutes, and further fully mixed. The obtained solution was spin-coated on the surface of a copper wire, and after drying, microwave plasma treatment was performed. The process parameters were as follows: working gas was nitrogen, flow rate was 60 sccm, pressure was 2 kPa, power was 2000 W, and time was 25 minutes to obtain a composite conductor; the mass ratio of the indium nitrate, titanium nitrate, deionized water and chitosan solution was 0.1:0.2:4:70; the chitosan solution was composed of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0026] (2) Placing the composite conductor in a microwave plasma generator for low-temperature plasma treatment, with oxygen as the working gas, a pressure of 350 mTorr, a power of 1400 W, a microwave frequency of 2.4 GHz, and a time of 80 s, to obtain intermediate A;

[0027] (3) The intermediate A was subjected to double-layer glow plasma treatment with the following process parameters: working gas was argon, target material was a high entropy alloy target, gas pressure was 35 Pa, working distance was 15 mm, source voltage was 830 V, cathode voltage was 350 V, and time was 3 h, to obtain a surface plasma enhanced copper core wire; the mass percentages of the high entropy alloy components were: tantalum 15%, manganese 10%, nickel 20%, chromium 25%, and titanium 30%.

[0028] Example 3; (1) Indium nitrate, titanium nitrate and deionized water were mixed, stirred at 1500 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 20 min, and further fully mixed. The obtained solution was spin-coated on the surface of a copper wire, and after drying, microwave plasma treatment was performed. The process parameters were as follows: working gas was nitrogen, flow rate was 80 sccm, pressure was 3 kPa, power was 2500 W, and time was 30 min to obtain a composite conductor; the mass ratio of the indium nitrate, titanium nitrate, deionized water and chitosan solution was 0.1:0.2:6:100; the chitosan solution was composed of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0029] (2) Placing the composite conductor in a microwave plasma generator for low-temperature plasma treatment, with oxygen as the working gas, a pressure of 400 mTorr, a power of 2000 W, a microwave frequency of 2.5 GHz, and a time of 100 s, to obtain intermediate A;

[0030] (3) The intermediate A was subjected to double-layer glow plasma treatment with the following process parameters: working gas was argon, target material was a high entropy alloy target, gas pressure was 50 Pa, working distance was 20 mm, source voltage was 850 V, cathode voltage was 400 V, and time was 5 h, to obtain a surface plasma enhanced copper core wire; the mass percentages of the high entropy alloy components were: tantalum 15%, manganese 10%, nickel 20%, chromium 25%, and titanium 30%.

[0031] Example 4; (1) Indium salt, titanium salt and deionized water were mixed, stirred at 500 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 10 minutes, and further fully mixed. The obtained solution was spin-coated on the surface of a copper wire, and after drying, microwave plasma treatment was performed. The working gas was nitrogen, the flow rate was 46 sccm, the pressure was 1 kPa, the power was 1800 W, and the time was 20 minutes to obtain a composite conductor; the mass ratio of indium chloride, titanium tetrachloride, deionized water and chitosan solution was 0.1:0.2:2.6:58; the chitosan solution was composed of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0032] (2) Placing the composite conductor in a microwave plasma generator for low-temperature plasma treatment, with oxygen as the working gas, a pressure of 316 mTorr, a power of 1000 W, a microwave frequency of 2.4 GHz, and a time of 66 s, to obtain intermediate A;

[0033] (3) The intermediate A was subjected to double-layer glow plasma treatment, with the working gas being argon, the target being a high entropy alloy target, the gas pressure being 25 Pa, the working distance being 10 mm, the source voltage being 800 V, the cathode voltage being 300 V, and the time being 1.5 h, to obtain a surface plasma-enhanced copper core wire; the mass percentages of the high entropy alloy components were: 15% tantalum, 10% manganese, 20% nickel, 25% chromium, and 30% titanium.

[0034] Example 5; (1) Indium salt, titanium salt and deionized water were mixed, stirred at 1000 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 15 minutes, and further fully mixed. The obtained solution was spin-coated on the surface of a copper wire, and after drying, microwave plasma treatment was performed. The working gas was nitrogen, the flow rate was 53 sccm, the pressure was 1.5 kPa, the power was 2000 W, and the time was 25 minutes to obtain a composite conductor; the mass ratio of indium sulfate, titanium tetrachloride, deionized water and chitosan solution was 0.1:0.2:5.5:75; the chitosan solution was composed of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0035] (2) Placing the composite conductor in a microwave plasma generator for low-temperature plasma treatment, with oxygen as the working gas, a pressure of 330 mTorr, a power of 1200 W, a microwave frequency of 2.5 GHz, and a time of 73 s, to obtain intermediate A;

[0036] (3) The intermediate A was subjected to double-layer glow plasma treatment, with the working gas being argon, the target being a high entropy alloy target, the gas pressure being 30 Pa, the working distance being 15 mm, the source voltage being 820 V, the cathode voltage being 350 V, and the time being 2.5 h, to obtain a surface plasma-enhanced copper core wire; the mass percentages of the high entropy alloy components were: 15% tantalum, 10% manganese, 20% nickel, 25% chromium, and 30% titanium.

[0037] Example 6; (1) Indium salt, titanium salt and deionized water were mixed, stirred at 1500 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 20 min, further fully mixed, and the obtained solution was spin-coated on the surface of a copper wire. After drying, microwave plasma treatment was performed, with nitrogen as the working gas, a flow rate of 70 sccm, a pressure of 2 kPa, a power of 2500 W and a time of 30 min to obtain a composite conductor; the mass ratio of indium salt, titanium nitrate, deionized water and chitosan solution was 0.1:0.2:2:100; the indium salt was a mixture of indium nitrate and indium chloride in a mass ratio of 2:1; the chitosan solution consisted of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0038] (2) Placing the composite conductor in a microwave plasma generator for low-temperature plasma treatment, with oxygen as the working gas, a pressure of 380 mTorr, a power of 1800 W, a microwave frequency of 2.4 GHz, and a time of 100 s, to obtain intermediate A;

[0039] (3) The intermediate A was subjected to double-layer glow plasma treatment, with the working gas being argon, the target being a high entropy alloy target, the gas pressure being 35 Pa, the working distance being 20 mm, the source voltage being 850 V, the cathode voltage being 300 V, and the time being 4.5 h, to obtain a surface plasma-enhanced copper core wire; the mass percentages of the high entropy alloy components were: 15% tantalum, 10% manganese, 20% nickel, 25% chromium, and 30% titanium.

[0040] Example 7; (1) Indium salt, titanium salt and deionized water were mixed, stirred at 1500 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 15 minutes, further fully mixed, and the obtained solution was spin-coated on the surface of a copper wire. After drying, microwave plasma treatment was performed, with nitrogen as the working gas, a flow rate of 70 sccm, a gas pressure of 2 kPa, a power of 2500 W and a time of 20 minutes to obtain a composite conductor; the mass ratio of indium salt, titanium salt, deionized water and chitosan solution was 0.1:0.2:6:50; the indium salt was prepared by mixing indium nitrate, indium chloride and indium sulfate in a mass ratio of 2:1:1; the titanium salt was prepared by mixing titanium nitrate and titanium tetrachloride in a mass ratio of 1:3; the chitosan solution consisted of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0041] (2) Placing the composite conductor in a microwave plasma generator for low-temperature plasma treatment, with oxygen as the working gas, a pressure of 380 mTorr, a power of 1600 W, a microwave frequency of 2.4 GHz, and a time of 100 s, to obtain intermediate A;

[0042] (3) The intermediate A was subjected to double-layer glow plasma treatment, with the working gas being argon, the target being a high entropy alloy target, the gas pressure being 50 Pa, the working distance being 20 mm, the source voltage being 850 V, the cathode voltage being 400 V, and the time being 3.5 h, to obtain a surface plasma-enhanced copper core wire; the mass percentages of the high entropy alloy components were: 15% tantalum, 10% manganese, 20% nickel, 25% chromium, and 30% titanium.

[0043] Comparative Example 1; (1) A chitosan solution was spin-coated on the surface of a copper wire, and after drying, a microwave plasma treatment was performed, wherein the process parameters were as follows: nitrogen as the working gas, a flow rate of 60 sccm, a pressure of 2 kPa, a power of 2000 W, and a time of 25 min, to obtain a composite conductor; the chitosan solution was composed of chitosan, deionized water, and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0044] (2) Placing the composite conductor in a microwave plasma generator for low-temperature plasma treatment, with oxygen as the working gas, a pressure of 350 mTorr, a power of 1400 W, a microwave frequency of 2.4 GHz, and a time of 80 s, to obtain intermediate A;

[0045] (3) The intermediate A was subjected to double-layer glow plasma treatment with the following process parameters: working gas is argon, target material is a high entropy alloy target material, temperature is 1500°C, gas pressure is 35 Pa, working distance is 15 mm, source voltage is 830 V, cathode voltage is 350 V, and time is 3 h, to obtain a surface plasma enhanced copper core wire; the mass percentage of the high entropy alloy components is: tantalum 15%, manganese 10%, nickel 20%, chromium 25%, titanium 30%.

[0046] Comparative Example 2; (1) Indium nitrate, titanium nitrate and deionized water were mixed, stirred at 1100 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 15 min, and further fully mixed. The obtained solution was spin-coated on the surface of a copper wire, and after drying, microwave plasma treatment was performed. The process parameters were as follows: working gas was nitrogen, flow rate was 60 sccm, pressure was 2 kPa, power was 2000 W, and time was 25 min to obtain a composite conductor; the mass ratio of the indium nitrate, titanium nitrate, deionized water and chitosan solution was 0.1:0.2:4:70; the chitosan solution was composed of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0047] (2) The composite conductor was subjected to double-layer glow plasma treatment with the following process parameters: working gas was argon, target material was a high entropy alloy target, temperature was 1500°C, pressure was 35 Pa, working distance was 15 mm, source voltage was 830 V, cathode voltage was 350 V, and time was 3 h, to obtain a surface plasma enhanced copper core wire; the mass percentage of the high entropy alloy components was: tantalum 15%, manganese 10%, nickel 20%, chromium 25%, and titanium 30%.

[0048] Comparative Example 3; (1) Indium nitrate, titanium nitrate and deionized water were mixed, stirred at 1100 rpm, and chitosan solution was added, followed by 21 kHz ultrasonic treatment for 15 min, and further fully mixed. The obtained solution was spin-coated on the surface of a copper wire, and after drying, microwave plasma treatment was performed. The process parameters were as follows: working gas was nitrogen, flow rate was 60 sccm, pressure was 2 kPa, power was 2000 W, and time was 25 min to obtain a composite conductor; the mass ratio of the indium nitrate, titanium nitrate, deionized water and chitosan solution was 0.1:0.2:4:70; the chitosan solution was composed of chitosan, deionized water and glacial acetic acid, and the mass ratio of the components was 1:5:1;

[0049] (2) The composite conductor was placed in a microwave plasma generator for low-temperature plasma treatment. The working gas was oxygen, the pressure was 350 mTorr, the power was 1400 W, the microwave frequency was 2.4 GHz, and the time was 80 s to obtain a surface plasma-enhanced copper core wire.

[0050] Comparative Example 4: Indium nitrate, titanium nitrate, and deionized water were mixed, stirred at 1100 rpm, and chitosan solution was added, followed by 21 kHz ultrasound for 15 minutes, and further fully mixed. The resulting solution was spin-coated on the surface of a copper wire, dried, and then subjected to microwave plasma treatment. The process parameters were as follows: working gas was nitrogen, flow rate was 60 sccm, pressure was 2 kPa, power was 2000 W, and time was 25 minutes to obtain a surface plasma-enhanced copper core wire; the mass ratio of the indium nitrate, titanium nitrate, deionized water, and chitosan solution was 0.1:0.2:4:70; the chitosan solution consisted of chitosan, deionized water, and glacial acetic acid, and the mass ratio of the components was 1:5:1.

[0051] Comparative Example 5; (1) A copper wire was placed in a microwave plasma generator and subjected to low-temperature plasma treatment, with oxygen as the working gas, a pressure of 350 mTorr, a power of 1400 W, a microwave frequency of 2.4 GHz, and a time of 80 s to obtain an intermediate A;

[0052] (2) The intermediate A was subjected to double-layer glow plasma treatment with the following process parameters: working gas was argon, target material was a high entropy alloy target, temperature was 1500°C, pressure was 35 Pa, working distance was 15 mm, source voltage was 830 V, cathode voltage was 350 V, and time was 3 h, to obtain a surface plasma enhanced copper core wire; the mass percentage of the high entropy alloy components was: tantalum 15%, manganese 10%, nickel 20%, chromium 25%, and titanium 30%.

[0053] Comparative Example 6: The copper wire was placed in a microwave plasma generator and subjected to low-temperature plasma treatment. The working gas was oxygen, the pressure was 350mTorr, the power was 1400W, the microwave frequency was 2.4GHz, and the time was 80s to obtain a surface plasma-enhanced copper core wire.

[0054] Comparative Example 7: The copper wire was subjected to double-layer glow plasma treatment, and its process parameters were: working gas was argon, target material was a high-entropy alloy target, temperature was 1500°C, gas pressure was 35 Pa, working distance was 15 mm, source voltage was 830 V, cathode voltage was 350 V, and time was 3 h to obtain a surface plasma-enhanced copper core wire; the mass percentages of the high-entropy alloy components were: 15% tantalum, 10% manganese, 20% nickel, 25% chromium, and 30% titanium.

[0055] Effect Examples

[0056] Table 1 below shows the performance analysis results of the copper core wires enhanced by surface plasma according to Examples 1, 2, 3, 4, 5, 6, and 7 of the present invention and Comparative Examples 1 to 7.

[0057]

[0058] From the comparison of the experimental data of the embodiment and the comparative example in Table 1, it can be found that the present invention uses indium ions and titanium ions to be doped into the carbon precursor solution, and performs the first plasma treatment. Indium and titanium doped graphene are obtained on the surface of the copper core through the plasma sintering process. The metal exists in the form of a single substance between the graphene and the copper matrix, forming a conductive channel between the two, and the incorporation of the metal enhances the interface bonding between the graphene and the copper matrix, thereby enhancing the durability of the copper core wire, wherein titanium and indium can form an alloy substance, thereby enhancing the overall performance of the matrix, and then a second plasma treatment is performed. By low-temperature plasma, the oxidized graphene and indium A continuous and dense protective film is formed on the copper surface, thereby achieving corrosion resistance. Graphene oxide and titanium oxide forming fine particles can fill some defects on the copper surface, enhancing the integrity of the copper matrix, thereby further enhancing the corrosion resistance of the matrix while improving the mechanical properties. Finally, a third plasma treatment is carried out, through a double-layer glow plasma process, and then the mechanical properties of the copper material are enhanced by infiltrating a high-entropy alloy. At the same time, a high-hardness, fine-grained alloy layer is formed on the surface. The modified and roughened graphene can enhance the surface bonding force between the matrix and the high-entropy alloy, thereby greatly enhancing the corrosion resistance and mechanical properties of the conductor.

[0059] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be encompassed therein. Any reference in a claim should not be construed as limiting the claim to which it relates.

Claims

1. A surface plasma enhanced copper core wire, characterized in that: The method comprises the following preparation steps: (1) Indium salt, titanium salt and deionized water are mixed, stirred at 500-1500 rpm, and chitosan solution is added, followed by 21 kHz ultrasound for 10-20 min, further fully mixed, and the obtained solution is spin-coated on the surface of the copper wire. After drying, the first plasma treatment is performed. The process parameters are: working gas is nitrogen, flow rate is 40-80 sccm, pressure is 1-3 kPa, power is 1500-2500 W, and time is 20-30 min to obtain a composite conductor; the mass ratio of indium salt, titanium salt, deionized water and chitosan solution is 0.1:0.2:2-6:50-100; the first plasma treatment is microwave plasma treatment; (2) subjecting the composite conductor to a second plasma treatment, wherein the process parameters are: working gas is oxygen, pressure is 300-400 mTorr, power is 800-2000 W, microwave frequency is 2.4-2.5 GHz, and time is 60-100 s, to obtain intermediate A; the second plasma treatment is performed by placing the composite conductor in a microwave plasma generator and performing low-temperature plasma treatment; (3) The intermediate A is subjected to a third plasma treatment, with the following process parameters: working gas is argon, target material is a high entropy alloy target material, gas pressure is 20~50Pa, working distance is 10~20mm, source voltage is 800~850V, cathode voltage is 300~400V, time is 1~5h, and surface plasma enhanced copper core wire is obtained; the mass percentage of the high entropy alloy components is: tantalum 15%, manganese 10%, nickel 20%, chromium 25%, titanium 30%; the third plasma treatment is a double-layer glow plasma treatment.

2. The surface plasma enhanced copper core wire according to claim 1, characterized in that: In step (1), the indium salt is at least one of indium nitrate, indium chloride, indium iodide, and indium sulfate; and the titanium salt is at least one of titanium nitrate, titanium tetrachloride, and titanic acid.

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