Etching method and device for optimizing resonant cavity and electronic equipment

Abstract

The invention relates to the technical field of quantum chips, in particular to an etching method and device for optimizing a resonant cavity and electronic equipment, and the method comprises the steps: firstly setting the etching magnitude of the resonant cavity, then comparing the received quality factor of the resonant cavity in the quantum chip with a preset quality factor, and determining the etching mode of the resonant cavity according to the comparison result; and then the resonant cavity is etched according to the etching mode and the etching magnitude, so that the quality factor optimization of the resonant cavity is realized, the quality factor of the etched resonant cavity is kept consistent with the quality factor of the resonant cavity set during simulation test, a quantum chip does not need to be prepared again, re-manufacturing of the quantum chip is avoided, and the manufacturing cost is reduced. And the manufacturing period and the production cost are reduced.

Description

Technical Field

[0001] The present application relates to the field of quantum chip technology, and in particular to an etching method, device and electronic device for optimizing a resonant cavity. Background Art

[0002] Before quantum chips are prepared, they need to go through a design phase before they can be put into preparation. After the quantum chips are packaged after the preparation phase, they can enter the actual testing phase. The parameters in the quantum chip can be obtained through testing. However, the test found that the quality factor of the resonant cavity in the quantum chip is significantly different from the quality factor set in the simulation design of the quantum chip, resulting in the quality factor of the resonant cavity in the prepared quantum chip not meeting the requirements. If the quantum chip is remade, not only will the cost increase, but the prepared quantum chip will still not meet the requirements, and the production cycle will also be longer.

[0003] Application Contents

[0004] The present application provides an etching method, device and electronic device for optimizing a resonant cavity, which are used to solve the problem that the quality factor of the resonant cavity in a prepared quantum chip does not meet the requirements, resulting in the need to re-manufacture the quantum chip, as well as the problem of increased costs and long production cycles caused by re-manufacturing the quantum chip.

[0005] The embodiment of this specification provides an etching method for optimizing a resonant cavity, including:

[0006] Set the etching level of the resonant cavity;

[0007] Comparing the quality factor of the resonant cavity in the received quantum chip with a preset quality factor, and determining an etching method of the resonant cavity according to the comparison result;

[0008] The resonant cavity is etched according to the etching method and the etching magnitude.

[0009] Optionally, the coplanar waveguide includes a central guide strip, a first guide strip, and a second guide strip, and is characterized in that the etching method includes a first etching method and a second etching method;

[0010] Determining the etching method of the resonant cavity according to the comparison result includes:

[0011] When the quality factor is less than the preset quality factor, the first etching method is adopted, wherein the first etching method is to etch the central conduction band.

[0012] Optionally, determining the etching method of the resonant cavity according to the comparison result further includes:

[0013] When the quality factor is greater than the preset quality factor, the second etching method is adopted, wherein the second etching is etching the first conduction band and / or the second conduction band.

[0014] Optionally, the etching magnitude includes multiple etching widths, and the multiple etching widths are arranged in order from small to large.

[0015] Optionally, etching the resonant cavity according to the etching method and the etching magnitude includes:

[0016] Etching the central conduction band in sequence according to the arrangement, and measuring the quality factor of the resonant cavity after each etching;

[0017] Determining the difference between the quality factor measured after each etching and the preset quality factor;

[0018] When the difference is within a preset difference threshold, the etching of the central conduction band is stopped.

[0019] Optionally, etching the resonant cavity according to the etching method and the etching magnitude further includes:

[0020] Etching one side of the first conduction band close to the central conduction band and / or one side of the second conduction band in sequence according to the order, and measuring the quality factor after each etching;

[0021] Determining the difference between the quality factor measured after each etching and the preset quality factor;

[0022] When the difference is within a preset difference threshold, etching one side of the first conductive strip and / or one side of the second conductive strip is stopped.

[0023] Optionally, the multiple etching widths include at least 0.1um, 0.15um, 0.2um, and 0.25um.

[0024] The embodiment of this specification also provides an etching device for optimizing the resonant cavity, including:

[0025] An etching level setting module, used to set the etching level of the resonant cavity;

[0026] An etching method determination module, used to compare the quality factor of the resonant cavity in the received quantum chip with a preset quality factor, and determine the etching method of the resonant cavity according to the comparison result;

[0027] An etching module is used to etch the resonant cavity according to the etching method and the etching magnitude.

[0028] An electronic device comprises a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the method described above.

[0029] A storage medium, characterized in that a computer program is stored in the storage medium, and the computer program is configured to execute the above-mentioned method when running.

[0030] Its beneficial effect is that: the present application first sets the etching order of the resonant cavity, then compares the quality factor of the resonant cavity in the received quantum chip with the preset quality factor, and determines the etching method of the resonant cavity according to the comparison result; then etches the resonant cavity according to the etching method and the etching order to optimize the quality factor of the resonant cavity, so that the quality factor of the etched resonant cavity is consistent with the quality factor of the resonant cavity set during the simulation test, without the need to re-prepare the quantum chip, avoiding the need to re-make the quantum chip, and reducing the production cycle and production cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0032] Figure 1 A schematic diagram of the principle of an etching method for optimizing a resonant cavity provided in an embodiment of this specification;

[0033] Figure 2 A schematic diagram of a resonant cavity having a meandering extension pattern made of a coplanar waveguide provided in an embodiment of this specification;

[0034] Figure 3 A schematic diagram of a coplanar waveguide provided in an embodiment of this specification;

[0035] Figure 4 A schematic diagram of the resonant cavity etching direction provided in the embodiments of this specification;

[0036] Figure 5 A partially enlarged schematic diagram of the coupling portion between the resonant cavity and the transmission bus provided in the embodiment of this specification;

[0037] Figure 6 A schematic diagram of the structure of an etching device for optimizing a resonant cavity provided in an embodiment of this specification;

[0038] Figure 7 A schematic diagram of the structure of an electronic device provided in an embodiment of this specification;

[0039] Figure 8 A schematic diagram of a computer-readable medium provided for an embodiment of this specification. DETAILED DESCRIPTION

[0040] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be construed as limiting the present application.

[0041] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and should not be construed as limiting the present application.

[0042] It should be noted that the relative arrangement of components and steps, the numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise.

[0043] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the present application, its application, or uses.

[0044] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.

[0045] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0046] It should be noted that like reference numerals and letters refer to similar items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0047] Reference Figure 1 A schematic diagram of the principle of an etching method for optimizing a resonant cavity provided in an embodiment of this specification includes:

[0048] S101: Setting the etching level of the resonant cavity.

[0049] S102: comparing the quality factor of the resonant cavity in the received quantum chip with a preset quality factor, and determining an etching method of the resonant cavity according to the comparison result;

[0050] S103: etching the resonant cavity according to the etching method and the etching magnitude.

[0051] In an optional embodiment, the prepared quantum chip is packaged and tested, and the q value of the resonant cavity in the quantum chip is found to be significantly different from the q value set when the quantum chip is simulated. In order to avoid the increased cost and production cycle caused by remaking the quantum chip, based on testing, simulation and process experience, local etching of the resonant cavity of the quantum chip can effectively achieve the purpose of changing the q value of the resonant cavity, where the q value is the quality factor, which measures the energy storage and frequency selection capabilities of the optical resonant cavity.

[0052] like Figure 2 As shown, when the resonant cavity 5 of the quantum chip is partially etched, it is essentially Figure 3 The coplanar waveguide 1 in the embodiment is etched, that is, the central guide band 2, the first guide band 3, and the second guide band 4 in the coplanar waveguide 1 are partially etched. When the quality factor of the resonant cavity in the prepared quantum chip is less than the quality factor set when simulating the quantum chip, the resonant cavity adopts the first etching method, that is, the central guide band 2 is etched, s becomes smaller, and the coupling between the resonant cavity 5 and the transmission bus 6 is weakened, thereby increasing the quality factor. Figure 4 As shown, the direction of the two middle arrows is the direction of etching the central conduction band 2, and the other structures are not subjected to etching process, which can achieve the purpose of increasing the quality factor of the resonant cavity in the prepared quantum chip; when the quality factor of the resonant cavity in the prepared quantum chip is greater than the quality factor set when simulating the quantum chip, the resonant cavity adopts the second etching method, that is, the first conduction band 3 and / or the second conduction band 4 are etched, w becomes larger, and the coupling between the resonant cavity 5 and the transmission bus 6 will be enhanced, thereby reducing the quality factor, as shown in FIG. Figure 4 As shown, the direction of the arrows on the upper and lower sides is the direction of etching the first conduction band 3 and / or the second conduction band 4, and the other structures are not subjected to the etching process, which can achieve the purpose of reducing the quality factor of the resonant cavity in the prepared quantum chip, so that the quality factor of the etched resonant cavity is consistent with the quality factor of the resonant cavity set during the simulation test, without the need to re-prepare the quantum chip, avoiding the need to re-make the quantum chip, and reducing the production cycle and production cost.

[0053] In an optional embodiment, the coplanar waveguide 1 is used as a transmission line and can be made into a read resonant cavity 5 and a transmission bus 6 in a quantum chip. Figure 2The figure shows a resonant cavity 5 with a meandering extension made of a coplanar waveguide 1 of the above structure, wherein the reading resonant cavity 5 can be coupled with a transmission bus 6, the end of the resonant cavity 5 is parallel to and spaced a certain distance from the transmission bus 6, and the transmission bus 6 can be a straight structure; at the same time, the reading resonant cavity 5 can also be coupled with a quantum bit, so as to read the input signal and read the output signal to the quantum bit input through the transmission bus 6. When the end of the resonant cavity 5 and the transmission bus 6 are parallel and spaced a certain distance apart, the coupling strength between the two can be conveniently controlled by changing the coupling length, thereby having better flexibility and convenience.

[0054] In an alternative embodiment, Figure 5 1 is a partial enlarged view of the partial coupling between the read resonant cavity 5 and the transmission bus 6. The read resonant cavity 5 and the transmission bus 6 are identical in structure, and differ only in the manufacturing process. The central guide strip 2, the first guide strip 3, and the second guide strip 4 constitute the read resonant cavity 5 and the transmission bus 6. As an example of exemplary application, the read resonant cavity 5 can be a quarter-wavelength or half-wavelength superconducting coplanar waveguide resonant cavity. In these examples, the material of the coplanar waveguide 1 can be, for example, aluminum, niobium, etc. Optionally, the coplanar waveguide 1 can extend in a straight line or in a winding shape.

[0055] Optionally, the etching magnitude includes multiple etching widths, and the multiple etching widths are arranged in order from small to large.

[0056] Optionally, etching the resonant cavity 5 according to the etching method and the etching magnitude includes:

[0057] Etching the central conduction band 2 in sequence according to the arrangement, and measuring the quality factor of the resonant cavity 5 after each etching;

[0058] Determining the difference between the quality factor measured after each etching and the preset quality factor;

[0059] When the difference is within a preset difference threshold, the etching of the central conductive band 2 is stopped.

[0060] Optionally, etching the resonant cavity 5 according to the etching method and the etching magnitude further includes:

[0061] Etching one side of the first conductive band 3 and / or one side of the second conductive band 4 close to the central conductive band 2 in sequence according to the order, and measuring the quality factor after each etching;

[0062] Determining the difference between the quality factor measured after each etching and the preset quality factor;

[0063] When the difference is within a preset difference threshold, etching one side of the first conductive strip 3 and / or one side of the second conductive strip 4 is stopped.

[0064] In an optional embodiment, since it is difficult to achieve that the quality factor of the prepared resonant cavity 5 is completely consistent with the quality factor set in the simulation, when optimizing the resonant cavity 5, it is only necessary to ensure that the etching effect reaches the quality factor we require as much as possible. The present application etches the resonant cavity 5 in a step-by-step etching manner, that is, etching is performed step by step according to the etching amount from small to large according to multiple etching widths in the etching magnitude. For example, multiple etching widths are set to 0.1um, 0.15um, 0.2um, and 0.25um. Before etching the central conduction band 2, it is first determined whether the difference between the quality factor of the resonant cavity 5 and the preset quality factor is within the preset difference threshold. When the difference is not within the preset difference threshold, the central conduction band 2 is first etched with an etching width of 0.10um, that is, Figure 3 s in the process decreases, and then the difference between the quality factor measured after etching and the preset quality factor is determined. If the difference is still not within the preset difference threshold, an etching width of 0.15um is used for etching, that is, 0.05um is etched again on the basis of the first etching, and the above process is repeated until the difference between the quality factor measured after etching and the preset quality factor is within the preset difference threshold. At this time, the etching of the central conduction band 2 is stopped; similarly, before etching one side of the first conduction band 3 and / or one side of the second conduction band 4, it is first determined whether the difference between the quality factor of the resonant cavity 5 and the preset quality factor is within the preset difference threshold. When the difference is not within the preset difference threshold, an etching width of 0.10um is first used to etch one side of the first conduction band 3 and / or one side of the second conduction band 4, that is, Figure 3 The w in increases, and then the difference between the quality factor measured after etching and the preset quality factor is determined. If the difference is still not within the preset difference threshold, an etching width of 0.15um is used for etching, that is, 0.05um is etched again on the basis of the first etching, and the above process is repeated until the difference between the quality factor measured after etching and the preset quality factor is within the preset difference threshold. The change of the quality factor of the resonant cavity is achieved by the above method, so that the resonant cavity after the etching operation meets the user's needs, and there is no need to re-prepare the quantum chip, thus avoiding the re-production of the quantum chip and reducing the production cycle and production cost. It should be noted that multiple etching widths are not limited to 0.1um, 0.15um, 0.2um, and 0.25um, and can be set accordingly according to the specific situation, which is not limited here. Optionally, when etching one side of the first conduction band 3 and / or one side of the second conduction band 4, it is best to etch the same etching width on one side of the first conduction band 3 and one side of the second conduction band 4 at the same time.

[0065] In an optional embodiment, it should be noted that the method of the present application is not limited to being used in Figure 3 The coplanar waveguide shown is also applicable to other types of coplanar waveguides, such as a coplanar waveguide in which the center guide strip 2 is recessed in the substrate, a coplanar waveguide in which the distance w from the center guide strip 2 to the first guide strip 3 is unequal to the distance w from the center guide strip 2 to the second guide strip 4, etc.

[0066] Reference Figure 6 A schematic diagram of the structure of an etching device for optimizing a resonant cavity provided in an embodiment of this specification includes:

[0067] An etching level setting module 201, used to set the etching level of the resonant cavity;

[0068] An etching method determination module 202 is used to compare the quality factor of the resonant cavity in the received quantum chip with a preset quality factor, and determine the etching method of the resonant cavity according to the comparison result;

[0069] The etching module 203 is used to etch the resonant cavity according to the etching method and the etching magnitude.

[0070] Optionally, the resonant cavity includes a coplanar waveguide, the coplanar waveguide includes a central guide band, a first guide band, and a second guide band, and the etching method includes a first etching method and a second etching method;

[0071] The etching method determination module 202 includes:

[0072] The first etching method determining unit is configured to adopt the first etching method when the quality factor is less than the preset quality factor, wherein the first etching method is to etch the central conduction band.

[0073] Optionally, the etching method determination module 202 further includes:

[0074] The second etching method determining unit is configured to adopt the second etching method when the quality factor is greater than the preset quality factor, wherein the second etching is etching the first conduction band and / or the second conduction band.

[0075] Optionally, the etching magnitude includes multiple etching widths, and the multiple etching widths are arranged in order from small to large.

[0076] Optionally, the etching module 203 includes:

[0077] An etching unit, used for etching the central conduction band in sequence according to the sequence, and measuring the quality factor of the resonant cavity after each etching;

[0078] A difference determination unit, used to determine the difference between the quality factor measured after each etching and the preset quality factor;

[0079] The etching determination unit is used to stop etching the central conduction band when the difference is within a preset difference threshold.

[0080] Optionally, the etching unit is further used to sequentially etch one side of the first conduction band close to the central conduction band and / or one side of the second conduction band according to the sorting, and measure the quality factor after each etching;

[0081] The difference determination unit is also used to determine the difference between the quality factor measured after each etching and the preset quality factor;

[0082] The etching determination unit is further configured to stop etching one side of the first conductive strip and / or one side of the second conductive strip when the difference is within a preset difference threshold.

[0083] Optionally, the multiple etching widths include at least 0.1um, 0.15um, 0.2um, and 0.25um.

[0084] Regarding the device in the above embodiment, the process of executing the operation in each step has been described in detail in the embodiment of the method, and will not be elaborated here.

[0085] Based on the same application concept, an embodiment of this specification also provides an electronic device.

[0086] The following describes an electronic device embodiment of the present application, which can be regarded as a specific physical implementation of the method and device embodiments of the present application. The details described in the electronic device embodiment of the present application should be regarded as a supplement to the above method or device embodiments; details not disclosed in the electronic device embodiment of the present application can be implemented with reference to the above method or device embodiments.

[0087] Reference Figure 7 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this specification. Figure 7 To describe the electronic device 300 according to this embodiment of the present application. Figure 7 The electronic device 300 shown is merely an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0088] like Figure 7 As shown, the electronic device 300 is in the form of a general computing device. The components of the electronic device 300 may include, but are not limited to: at least one processing unit 310, at least one storage unit 320, a bus 330 connecting different device components (including the storage unit 320 and the processing unit 310), a display unit 340, etc.

[0089] The storage unit stores a program code, which can be executed by the processing unit 310, so that the processing unit 310 performs the steps of various exemplary embodiments of the present application described in the above processing method section of this specification. For example, the processing unit 310 can perform the following steps: Figure 1 Steps shown.

[0090] The storage unit 320 may include a readable medium in the form of a volatile storage unit, such as a random access memory unit (RAM) 3201 and / or a cache memory unit 3202 , and may further include a read-only memory unit (ROM) 3203 .

[0091] The storage unit 320 may also include a program / utility 3204 having a set (at least one) of program modules 3205, such program modules 3205 including but not limited to: operating means, one or more application programs, other program modules and program data, each of which or some combination may include the implementation of a network environment.

[0092] Bus 330 may represent one or more of several types of bus structures, including a memory unit bus or memory unit controller, a peripheral bus, an accelerated graphics port, a processing unit, or a local bus using any of a variety of bus architectures.

[0093] The electronic device 300 may also communicate with one or more external devices 400 (e.g., keyboards, pointing devices, Bluetooth devices, etc.), one or more devices that enable a user to interact with the electronic device 300, and / or any device that enables the electronic device 300 to communicate with one or more other computing devices (e.g., routers, modems, etc.). Such communication may be performed through an input / output (I / O) interface 350. Furthermore, the electronic device 300 may also communicate with one or more networks (e.g., a local area network (LAN), a wide area network (WAN), and / or a public network, such as the Internet) through a network adapter 360. The network adapter 360 may communicate with other modules of the electronic device 300 through the bus 330. It should be understood that although Figure 7 Not shown, other hardware and / or software modules may be used in conjunction with the electronic device 300, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID devices, tape drives, and data backup storage devices.

[0094] Through the description of the above implementation methods, it is easy for those skilled in the art to understand that the exemplary embodiments described in the present application can be implemented by software, or by software combined with necessary hardware. Therefore, the technical solution according to the implementation method of the present application can be embodied in the form of a software product, which can be stored in a computer-readable storage medium (which can be a CD-ROM, USB flash drive, mobile hard disk, etc.) or on a network, including a number of instructions to enable a computing device (which can be a personal computer, server, or network device, etc.) to execute the above method according to the present application. When the computer program is executed by a data processing device, the computer-readable medium can implement the above method of the present application, that is: Figure 1 The method shown.

[0095] Reference Figure 8 A schematic diagram of a computer-readable medium provided for an embodiment of this specification.

[0096] accomplish Figure 1 The computer program of the method shown can be stored on one or more computer readable media. The computer readable medium can be a readable signal medium or a readable storage medium. The readable storage medium can be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor device, device or component, or any combination of the above. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0097] The computer readable storage medium may include a data signal propagated in a baseband or as part of a carrier wave, wherein a readable program code is carried. This propagated data signal may take a variety of forms, including but not limited to an electromagnetic signal, an optical signal, or any suitable combination of the above. The readable storage medium may also be any readable medium other than a readable storage medium, which may send, propagate, or transmit a program for use by or in combination with an instruction execution device, device, or device. The program code contained on the readable storage medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical cable, RF, etc., or any suitable combination of the above.

[0098] Program code for performing the operations of the present application may be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java, C++, etc., and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as a separate software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server. In the case of a remote computing device, the remote computing device may be connected to the user computing device through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computing device (e.g., using an Internet service provider to connect through the Internet).

[0099] In summary, the present application can be implemented in hardware, or in a software module running on one or more processors, or in a combination thereof. It should be understood by those skilled in the art that general data processing devices such as microprocessors or digital signal processors (DSPs) can be used in practice to implement some or all functions of some or all components in the embodiments of the present application. The present application can also be implemented as a device or apparatus program (e.g., computer program and computer program product) for executing part or all of the methods described herein. Such a program implementing the present application can be stored on a computer-readable medium, or can have the form of one or more signals. Such a signal can be downloaded from an Internet website, or provided on a carrier signal, or provided in any other form.

[0100] The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present application in detail. It should be understood that the present application is not inherently related to any specific computer, virtual device or electronic device, and various general devices can also implement the present application. The above description is only a specific embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

[0101] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0102] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. An etching method for optimizing a resonant cavity, characterized in that: include: Set the etching level of the resonant cavity; Comparing the quality factor of the resonant cavity in the received quantum chip with a preset quality factor, and determining an etching method of the resonant cavity according to the comparison result; The resonant cavity is etched according to the etching method and the etching magnitude.

2. The method according to claim 1, wherein the resonant cavity comprises a coplanar waveguide, wherein the coplanar waveguide comprises a central guide strip, a first guide strip, and a second guide strip, wherein: The etching method includes a first etching method and a second etching method; Determining the etching method of the resonant cavity according to the comparison result includes: When the quality factor is less than the preset quality factor, the first etching method is adopted, wherein the first etching method is to etch the central conduction band.

3. The method according to claim 2, characterized in that The step of determining the etching method of the resonant cavity according to the comparison result further includes: When the quality factor is greater than the preset quality factor, the second etching method is adopted, wherein the second etching is etching the first conduction band and / or the second conduction band.

4. The method according to claim 2, characterized in that The etching magnitude includes a plurality of etching widths, and the plurality of etching widths are arranged in order from small to large.

5. The method according to claim 4, characterized in that The etching of the resonant cavity according to the etching method and the etching magnitude includes: Etching the central conduction band in sequence according to the arrangement, and measuring the quality factor of the resonant cavity after each etching; Determining the difference between the quality factor measured after each etching and the preset quality factor; When the difference is within a preset difference threshold, the etching of the central conduction band is stopped.

6. The method according to claim 4, characterized in that The etching of the resonant cavity according to the etching method and the etching magnitude further includes: Etching one side of the first conduction band close to the central conduction band and / or one side of the second conduction band in sequence according to the order, and measuring the quality factor after each etching; Determining the difference between the quality factor measured after each etching and the preset quality factor; When the difference is within a preset difference threshold, etching one side of the first conductive strip and / or one side of the second conductive strip is stopped.

7. The method according to claim 4, characterized in that The multiple etching widths include at least 0.1um, 0.15um, 0.2um, and 0.25um.

8. An etching device for optimizing a resonant cavity, which is implemented based on the method according to any one of claims 1 to 7, characterized in that ,include: An etching level setting module, used to set the etching level of the resonant cavity; An etching method determination module, used to compare the quality factor of the resonant cavity in the received quantum chip with a preset quality factor, and determine the etching method of the resonant cavity according to the comparison result; An etching module is used to etch the resonant cavity according to the etching method and the etching magnitude.

9. An electronic device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and the processor is configured to run the computer program to execute the method according to any one of claims 1 to 7.

10. A storage medium, characterized in that: The storage medium stores a computer program, and the computer program is configured to execute the method according to any one of claims 1 to 7 when running.

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