Display device

Abstract

A display device includes: a thin film transistor including a gate electrode, and a pair of first and second main electrodes disposed on both sides of the gate electrode in a gate length direction; an accumulation capacitor disposed in a region overlapping the thin film transistor, the accumulation capacitor being electrically connected to the first main electrode; a first light shielding body that is disposed between the first main electrode and the storage capacitor, is disposed between the gate electrode and the first main electrode, and shields incident light in the longitudinal direction of the gate; and a second light shielding body which is disposed between the second main electrode and the storage capacitor, is disposed between the gate electrode and the second main electrode, and shields incident light in the longitudinal direction of the gate.

Description

Technical Field

[0001] The present disclosure relates to a display device. Background Art

[0002] Patent Document 1 discloses an electro-optical device as a liquid crystal display device. In the electro-optical device, pixels are arranged at intersections of data lines and scanning lines. The pixels are arranged in a matrix.

[0003] The pixel has a thin film transistor (TFT) and a pixel electrode electrically connected to one source / drain region thereof. Furthermore, a storage capacitor is electrically connected in parallel between one source / drain region and the pixel electrode. A data line is connected to the other source / drain region of the thin film transistor, and a scanning line is connected to the gate electrode. A liquid crystal layer and an opposing electrode are respectively arranged on the pixel electrode.

[0004] The storage capacitor is connected to one source / drain region via a light shielding portion (pixel electrode side light shielding portion), so that light shielding properties against light incident on the thin film transistor from the connection portion side between the storage capacitor and one source / drain region can be improved, and the generation of light leakage current of the thin film transistor can be reduced.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2009-115883 Summary of the invention

[0008] In the aforementioned electro-optical device, the gate length direction of the thin film transistor is not considered, especially the light shielding property for light incident from the connection portion between another source / drain region and the data line to the thin film transistor side. Therefore, it is desirable to develop a display device capable of improving the light shielding property for light incident. Furthermore, it is desirable to develop a display device capable of improving the capacitance value of the storage capacitor while improving the light shielding property.

[0009] The display device involved in the first embodiment of the present disclosure comprises: a thin film transistor, having a gate electrode, a pair of first main electrodes and a second main electrode arranged on both sides of the gate electrode in the gate length direction; a storage capacitor, arranged in a region overlapping with the thin film transistor, and the storage capacitor is electrically connected to the first main electrode; a first light shielding body, arranged between the first main electrode and the storage capacitor, and arranged between the gate electrode and the first main electrode, to shield incident light in the gate length direction; and a second light shielding body, arranged between the second main electrode and the storage capacitor, and arranged between the gate electrode and the second main electrode, to shield incident light in the gate length direction.

[0010] The display device according to the second embodiment of the present disclosure is further provided with a pair of third light-shielding bodies and a fourth light-shielding body arranged on both sides of the gate electrode in the gate width direction and along the thin film transistor in the display device according to the first embodiment for shielding incident light in the gate width direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a longitudinal cross-sectional configuration diagram of a pixel of the display device according to the first embodiment of the present disclosure.

[0012] Figure 2 yes Figure 1 An enlarged cross-sectional diagram of a pixel is shown.

[0013] Figure 3 yes Figure 2 A top view of the pixel structure shown.

[0014] Figure 4 yes Figure 1 and Figure 2 A schematic exploded perspective view of a pixel is shown.

[0015] Figure 5 The first step cross-sectional view is used to explain the method for manufacturing the display device according to the first embodiment step by step.

[0016] Figure 6 This is a cross-sectional view of the second step.

[0017] Figure 7 This is a cross-sectional view of the third process.

[0018] Figure 8 This is a cross-sectional view of the fourth step.

[0019] Fig. 9 is a pixel of a display device according to a second embodiment of the present disclosure. Figure 3 The corresponding top view composition diagram.

[0020] Fig.10 is a pixel of a display device according to a third embodiment of the present disclosure. Figure 3 The corresponding top view composition diagram.

[0021] Fig.11 is a pixel of a display device according to a fourth embodiment of the present disclosure and Figure 3 The corresponding top view composition diagram.

[0022] Fig.12 yes Fig.11 The pixels shown are Figure 4 Corresponding schematic exploded perspective view.

[0023] Fig.13is a pixel of a display device according to a fifth embodiment of the present disclosure and Figure 3 The corresponding top view composition diagram.

[0024] Fig.14 This is a block diagram showing an example of a schematic configuration of a vehicle control system.

[0025] Fig.15 It is an explanatory diagram showing an example of the installation positions of the vehicle exterior information detection unit and the imaging unit.

[0026] Fig.16 This is a diagram showing an example of a schematic configuration of an endoscopic surgery system.

[0027] Fig.17 This is a block diagram showing an example of the functional configuration of a camera head and a CCU. DETAILED DESCRIPTION

[0028] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that the description is performed in the following order.

[0029] 1. First Implementation

[0030] The first embodiment is a first example of applying the present technology to a display device. The first embodiment describes the configuration of a display device and a pixel, and a method for manufacturing the display device and the pixel.

[0031] 2. Second Implementation

[0032] The second embodiment is a second example in which the configuration of the light blocking body is changed in the solid-state imaging device according to the first embodiment.

[0033] 3. Third Implementation

[0034] The third embodiment is a third example in which the configuration of the light blocking body is changed in the solid-state imaging device according to the first embodiment.

[0035] 4. Fourth Implementation

[0036] The fourth embodiment is a fourth example in which the configuration of the light blocking body is changed in the solid-state imaging device according to the first embodiment.

[0037] 5. Fifth Implementation

[0038] The fifth embodiment is a fifth example in which the configuration of the light blocking body is changed in the solid-state imaging device according to the first embodiment.

[0039] 6. Application examples to mobile objects

[0040] This application example describes an example in which the present technology is applied to a vehicle control system as an example of a mobile object control system.

[0041] 7. Application example to endoscopic surgery system

[0042] This application example describes an example in which the present technology is applied to an endoscopic surgery system.

[0043] 8. Other Implementation Methods

[0044] <1. First Embodiment>

[0045] use Figure 1 to Figure 8 A display device 1 according to a first embodiment of the present disclosure will be described.

[0046] Here, the arrow X direction shown appropriately in the figure indicates a top view direction of the display device 1 placed on a plane for convenience. The arrow Y direction indicates another top view direction orthogonal to the arrow X direction. In addition, the arrow Z direction indicates an upward direction orthogonal to the arrow X direction and the arrow Y direction. That is, the arrow X direction, the arrow Y direction, and the arrow Z direction coincide with the X-axis direction, the Y-axis direction, and the Z-axis direction of the three-dimensional coordinate system, respectively.

[0047] It should be noted that these directions are shown to help understand the description and do not limit the directions of the present technology.

[0048] [Configuration of Display Device 1]

[0049] (1) Overall Structure of Display Device 1

[0050] Figure 1 An example of a longitudinal cross-sectional structure of the display device 1 and the pixel 10 is shown. Figure 2 An example of an enlarged longitudinal cross-sectional structure of the pixel 10 is shown. Figure 3 express Figure 2 FIG. 1 is an example of a top view configuration of the pixel 10 shown. Figure 4 An example of a schematic three-dimensional structure of the pixel 10 after being decomposed is shown.

[0051] like Figure 1 As shown, the display device 1 according to the first embodiment is constructed as a liquid crystal display device. The display device 1 includes a substrate 2 as a base and includes pixels 10 arranged on the substrate 2 .

[0052] like Figure 1~Figure 4 As shown in FIG. 1 , the pixels 10 are arranged at the intersection of the scanning signal lines 3 extending in the arrow Y direction and the video signal lines 81 extending in the arrow X direction. Although the detailed illustration is omitted, a plurality of scanning signal lines 3 are arranged at a certain interval in the arrow X direction. A plurality of video signal lines 81 are arranged at a certain interval in the arrow Y direction. That is, a plurality of pixels 10 are arranged in the arrow X direction and the arrow Y direction, respectively.

[0053] The pixel 10 includes a thin film transistor (TFT) 5, a storage capacitor 6, and a liquid crystal unit 9. Here, the liquid crystal unit 9 includes a pixel electrode 91, a liquid crystal alignment film 92, a liquid crystal layer 93, a liquid crystal alignment film 94, and a common pixel electrode 95 as main components.

[0054] Furthermore, in the display device 1 , an optical lens 11 is disposed on the pixel 10 . In addition, a counter substrate 12 is disposed on the side of the optical lens 11 opposite to the pixel 10 .

[0055] Hereinafter, each component will be described in detail.

[0056] (2) Structure of substrate 2

[0057] A light-transmitting substrate is used as the substrate 2. For example, a quartz substrate is used as the substrate 2.

[0058] (3) Configuration of scanning signal line 3

[0059] The scanning signal line 3 is disposed on the surface of the substrate 2 in the arrow Z direction via an insulator whose reference numeral is omitted. Figure 3 as well as Figure 4 As shown, although the scanning signal line 3 is extended in the arrow Y direction, when viewed from the arrow Z direction (hereinafter referred to as "in a plan view"), the line width of the scanning signal line 3 is enlarged in the arrow X direction in the region overlapping with the thin film transistor 5. The line width of the scanning signal line 3 is substantially the same as the size between the connection portion between the first main electrode 511 of the thin film transistor 5 and the storage capacitor 6 and the connection portion between the second main electrode 521 and the contact wiring 7 (video signal line 81). In the region overlapping with the thin film transistor 5, the scanning signal line 3 is used as a back light shield.

[0060] The scanning signal line 3 is formed of a conductive material having conductivity and light shielding properties. The scanning signal line 3 is formed of a metal material such as tungsten silicide (WSi) or tungsten (W). When the scanning signal line 3 is formed of WSi, the thickness of the scanning signal line 3 is, for example, not less than 100 nm and not more than 200 nm.

[0061] (4) Configuration of Thin Film Transistor 5

[0062] like Figure 1~Figure 4 As shown, the thin film transistor 5 is disposed on the side of the scanning signal line 3 opposite to the substrate 2 via an insulator (reference numeral omitted). The thin film transistor 5 includes a gate electrode 54 and a pair of first main electrodes 511 and second main electrodes 521 disposed on both sides of the gate electrode 54 in the gate length Lg direction.

[0063] The first main electrode 511 and the second main electrode 521 are formed on the semiconductor layer 51 .

[0064] Here, the semiconductor layer 51 is arranged with the arrow X direction as the long side direction and the arrow Y direction as the short side direction, and straddles the area where the line width of the scanning signal line 3 is enlarged. That is, the semiconductor layer 51 is formed in a rectangular shape that is long in the arrow X direction when viewed from above. The semiconductor layer 51 uses, for example, polycrystalline silicon (Si), and the thickness of the semiconductor layer 51 is, for example, not less than 20 nm and not more than 100 nm.

[0065] The first main electrode 511 and the second main electrode 521 are disposed on the semiconductor layer 51 and are formed by an n-type semiconductor region having a high impurity density. The region of the first main electrode 511 formed by the n-type semiconductor region having a high impurity density corresponds to the "second region" involved in the present technology, which is connected to the storage capacitor 6 described later with a low resistance value. On the other hand, the region of the second main electrode 521 formed by the n-type semiconductor region having a high impurity density corresponds to the "second region" involved in the present technology, which is connected to the video signal line 81 with a low resistance value.

[0066] A low impurity density region (LDD: Lightly Doped Drain) 512 is provided near the gate electrode 54 of the first main electrode 511. The low impurity density region 512 is formed to have an impurity density lower than that of the second region of the first main electrode 511. Here, the low impurity density region 512 corresponds to the "first region" according to the present technique.

[0067] Similarly, a low impurity density region 522 is provided near the gate electrode 54 of the second main electrode 521. The low impurity density region 522 is formed to have an impurity density lower than that of the second region of the second main electrode 521. Here, the low impurity density region 522 corresponds to the "first region" of the present technology.

[0068] The gate electrode 54 overlaps the middle portion of the semiconductor layer 51 and is disposed on the side of the semiconductor layer 51 opposite to the substrate 2 via the gate insulating film 53. Here, the gate insulating film 53 is formed of one or more insulating materials selected from silicon oxide (SiO2) and silicon nitride (SiN).

[0069] like Figure 3 as well as Figure 4As shown in FIG. 1 , the effective portion 5401 of the gate electrode 54 overlapping the semiconductor layer 51 is used as the effective gate electrode of the gate electrode 54. The gate electrode 54 is further integrally formed with a lead portion 5402 and a lead portion 5403 that are led out from the effective portion 5401 to both sides in the gate width Wg direction. The lead portion 5402 and the lead portion 5403 are respectively extended in the gate length Lg direction. In a plan view, the overall gate electrode 54 including the effective portion 5401, the lead portion 5402, and the lead portion 5403 is formed in an H-shape in a plan view.

[0070] The gate electrode 54 is formed by laminating a composite film of polycrystalline Si and WSi, for example. The thickness of the gate electrode 54 is, for example, not less than 100 nm and not more than 200 nm.

[0071] Alternatively, the gate electrode 54 may be formed of one or more electrode materials selected from WSi, Si, W, aluminum (Al), copper (Cu), AlSi, AlCu, titanium (Ti), and titanium nitride (TiN).

[0072] (5) Configuration of the Third Light-Blocking Body 31 and the Fourth Light-Blocking Body 32

[0073] like Figure 3 as well as Figure 4 As shown, a pair of third light-blocking bodies 31 and fourth light-blocking bodies 32 are disposed on both sides of the thin film transistor 5 in the gate width Wg direction.

[0074] The third light shielding body 31 is disposed between one lead-out portion 5402 of the gate electrode 54 and the scanning signal line 3, and is electrically connected to the lead-out portion 5402 and the scanning signal line 3. The third light shielding body 31 is formed in a rectangular parallelepiped shape having a surface with a gate length Lg direction as a long side direction and a gate width direction Wg as a short side direction.

[0075] That is, the third light shielding body 31 is formed to effectively suppress or prevent incident light from the gate width Wg direction to the thin film transistor 5 , and further formed to electrically connect the gate electrode 54 of the thin film transistor 5 and the scanning signal line 3 .

[0076] Similar to the third light shielding body 31, the fourth light shielding body 32 is disposed between the other lead-out portion 5403 of the gate electrode 54 and the scanning signal line 3, and is electrically connected to the lead-out portion 5403 and the scanning signal line 3. The fourth light shielding body 32 is formed in the same rectangular parallelepiped shape as the third light shielding body 31.

[0077] The fourth light-blocking body 32 is formed to effectively suppress or prevent incident light from the gate width Wg direction to the thin film transistor 5 , and further formed to electrically connect the gate electrode 54 of the thin film transistor 5 and the scanning signal line 3 .

[0078] The third light-blocking body 31 and the fourth light-blocking body 32 are each formed of a conductive material having a light-blocking property. For example, WSi is used for each of the third light-blocking body 31 and the fourth light-blocking body 32 .

[0079] (6) Configuration of storage capacitor 6

[0080] like Figure 1~Figure 4 As shown, storage capacitor 6 is provided for each pixel 10 on the side of thin film transistor 5 opposite to substrate 2. Storage capacitor 6 is formed in the same shape and size as the region where the line width of scanning signal line 3 is enlarged in plan view.

[0081] Although not shown in the figure, the first main electrode 511 of the thin film transistor 5 is electrically connected to the pixel electrode 91. The connection area between the first main electrode 511 and the pixel electrode 91 corresponds to the "first connection portion" involved in the present technology. A part of the storage capacitor 6 is connected to the first main electrode 511 as the first connection portion, and the storage capacitor 6 is electrically connected in parallel between the first main electrode 511 and the pixel electrode 91.

[0082] In the first embodiment, the storage capacitor 6 is formed by a multilayer stacked structure in which an electrode 61, a dielectric 62, an electrode 63, a dielectric 64, and an electrode 65 are stacked in sequence in the direction of arrow Z. Although the connection structure is omitted, the electrode 61 and the electrode 65 are respectively connected to the first main electrode 511. The electrode 63 is connected to a fixed power source (not shown).

[0083] The electrodes 61, 63, and 65 are each formed of, for example, polycrystalline Si. Impurities that reduce resistance are added to the polycrystalline Si. The thickness of each of the electrodes 61, 63, and 65 is, for example, not less than 100 nm and not more than 200 nm.

[0084] The dielectric 62 and the dielectric 64 are each formed of, for example, SiN. The thickness of each of the dielectric 62 and the dielectric 64 is, for example, not less than 10 nm and not more than 30 nm.

[0085] Furthermore, on the side of the electrode 65 opposite to the substrate 2 , a light shielding body 67 and a light shielding body 68 that cover at least the storage capacitor 6 are sequentially stacked in the arrow Z direction.

[0086] The light shielding body 67 is formed of, for example, WSi. The thickness of the light shielding body 67 is, for example, not less than 40 nm and not more than 100 nm.

[0087] The light shielding body 68 is formed of, for example, WSi, and has a thickness of, for example, 100 nm to 200 nm.

[0088] The thin film transistor 5 and the storage capacitor 6 are respectively disposed in the simplified insulator 41. The insulator 41 is actually formed of a plurality of insulating layers. The insulator 41 is formed of, for example, SiO2 as a main insulating material.

[0089] (7) Configuration of video signal line 81

[0090] like Figure 1~Figure 3 As shown, the second main electrode 521 of the thin film transistor 5 is connected to the video signal line 81 via the contact wiring (plug wiring) 7 .

[0091] The contact wiring 7 is embedded in a connection hole (reference numeral omitted) formed in the insulator 41. The contact wiring 7 is formed of, for example, a composite film in which Ti, TiN, and W are stacked in this order.

[0092] It should be noted that the contact wiring 7 may be formed by one or more wiring materials selected from Ti, TiN, Al, AlSi, AlCu, Cu, and W.

[0093] On the other hand, the video signal line 81 is disposed in the insulator 41 and extends on the insulator 41 in the direction of arrow X. The video signal line 81 is formed, for example, by a composite film in which Ti, TiN, and AlCu are sequentially stacked. The thickness of the video signal line 81 is, for example, not less than 400 nm and not more than 500 nm.

[0094] It should be noted that the video signal line 81 can also be formed by one or more wiring materials selected from Ti, TiN, Al, AlSi, AlCu, Cu and W.

[0095] The video signal line 81 is arranged in the simplified insulator 42. The insulator 42 is actually formed of a plurality of insulating layers. The insulator 42 is formed of, for example, SiO2 as a main insulating material.

[0096] In addition, a plurality of wirings 82 and wirings 83 are disposed on the video signal line 81 in the insulator 42. The wirings 82 and 83 are each formed of the same wiring material as that of the video signal line 81, for example.

[0097] (8) Configuration of Liquid Crystal Section 9

[0098] like Figure 1As shown, the liquid crystal section 9 is disposed on the side of the insulator 42 opposite to the substrate 2. The liquid crystal section 9 is provided by laminating a pixel electrode 91, a liquid crystal alignment film 92, a liquid crystal layer 93, a liquid crystal alignment film 94, and a common pixel electrode 95 in this order in the arrow Z direction.

[0099] The pixel electrode 91 is provided for each pixel 10. Although partial wiring is omitted, the pixel electrode 91 is electrically connected to the first main electrode 511 of the thin film transistor 5 through the wiring 83. The pixel electrode 91 is formed of a transparent electrode material such as indium tin oxide (ITO).

[0100] The liquid crystal alignment film 92 is provided to cover the pixel electrode 91. The liquid crystal alignment film 92 is formed of, for example, SiO2.

[0101] The liquid crystal layer 93 is disposed between the liquid crystal alignment film 92 and the upper liquid crystal alignment film 94. The liquid crystal layer 93 is composed of liquid crystal molecules. The orientation of the liquid crystal molecules changes by the voltage applied to the pixel electrode 91 and the common pixel electrode 95, so that the optical characteristics of the liquid crystal layer 93 change.

[0102] The liquid crystal alignment film 94 is provided to cover the liquid crystal layer 93. The liquid crystal alignment film 94 is formed of, for example, SiO2, similarly to the liquid crystal alignment film 92.

[0103] The common pixel electrode 95 is provided as a common electrode in the plurality of pixels 10. A fixed potential is supplied to the common pixel electrode 95. Alternatively, a periodically changing voltage may be supplied to the common pixel electrode 95. The common pixel electrode 95 is formed of a transparent electrode material such as ITO, similarly to the pixel electrode 91.

[0104] (9) Configuration of the optical lens 11

[0105] like Figure 1 As shown, the optical lens 11 is disposed on the side of the liquid crystal portion opposite to the substrate 2 via an insulator 43. Here, the insulator 43 is made of SiO2, for example.

[0106] In the first embodiment, a microlens structure is adopted in the optical lens 11, and the optical lens 11 is arranged for each pixel 10. The optical lens 11 is made of, for example, silicon oxynitride (SiO X N Y ).

[0107] (10) Configuration of Counter Substrate 12

[0108] like Figure 1 As shown, the counter substrate 12 is disposed on the side of the optical lens 11 opposite to the substrate 2. As the counter substrate 12, similarly to the substrate 2, for example, a quartz substrate is used.

[0109] (11) Configuration of the First Light-Blocking Body 541 and the Second Light-Blocking Body 542

[0110] like Figure 1~Figure 4 As shown, the display device 1 further includes a first light-blocking body 541 and a second light-blocking body 542 in the region of the pixel 10 .

[0111] The first light shielding body 541 is disposed between the first main electrode 511 of the thin film transistor 5 and the storage capacitor 6, and is disposed between the gate electrode 54 and the first main electrode 511. The first light shielding body 541 is configured to shield incident light in the gate length direction from the connection region between the first main electrode 511 of the thin film transistor 5 and the storage capacitor 6 toward the gate electrode 54 side.

[0112] On the other hand, the second light shielding body 542 is disposed between the second main electrode 521 and the storage capacitor 6, and is disposed between the gate electrode 54 and the second main electrode 521. The second light shielding body 542 is configured to shield incident light in the gate length direction from the second main electrode 521 side of the thin film transistor 5 (the connection area between the second main electrode 521 and the video signal line 81) toward the gate electrode 54 side.

[0113] The first light shielding body 541 is electrically connected to the storage capacitor 6. In other words, the storage capacitor 6 is directly electrically connected to the first main electrode 511 through the connection hole 411 formed in the insulator 41, and is directly electrically connected to the first light shielding body 541 through the same connection hole 411. The connection area between the storage capacitor 6 and the first light shielding body 541 is offset to the gate electrode 54 side (gate length Lg direction) relative to the connection area between the storage capacitor 6 and the first main electrode 511.

[0114] That is, the first light shielding body 541 is not directly connected to the first main electrode 511 , but is connected to the first main electrode 511 via the storage capacitor 6 .

[0115] Therefore, in addition to the structure in which the storage capacitor 6 is connected to the first main electrode 511 via the first light shielding body 541 , there is also a structure in which the storage capacitor 6 is directly connected to the first main electrode 511 . That is, the area of ​​the storage capacitor 6 increases along the step shape of the connection hole 411 .

[0116] On the other hand, the second light shielding body 542 is electrically connected to the storage capacitor 6 similarly to the first light shielding body 541. In other words, the storage capacitor 6 is directly electrically connected to the second light shielding body 542 via the connection hole 412 formed in the insulator 41.

[0117] Therefore, the storage capacitor 6 is structured to be connected to the second light shielding body, and the area of ​​the storage capacitor 6 is further increased along the stepped shape of the connection hole 412 .

[0118] like Figure 3 As shown, in the first embodiment, the first light-blocking body 541 and the second light-blocking body 542 are respectively disposed between the third light-blocking body 31 and the fourth light-blocking body 32 in a plan view.

[0119] In addition, if Figure 1 as well as Figure 2 As shown, the first light shielding body 541 and the second light shielding body 542 are formed on the same conductive layer with respect to the gate electrode 54 of the thin film transistor 5 and are formed of the same conductive material. In other words, the first light shielding body 541 and the second light shielding body 542 are formed using the gate electrode 54 of the thin film transistor 5.

[0120] [Method of Manufacturing Display Device 1]

[0121] Next, use Figure 5~Figure 8 The method for manufacturing the above-mentioned display device 1 will be briefly described. Figure 5~Figure 8 An example of a process cross section for explaining the method for manufacturing the display device 1 according to the first embodiment step by step is shown.

[0122] First, prepare the substrate 2 (see Figure 5 Next, a scanning signal line 3 is formed on the substrate 2 (see Figure 5 ).

[0123] like Figure 5 As shown in FIG. 1 , a thin film transistor 5 is formed. The thin film transistor 5 includes a pair of first main electrodes 511 and a second main electrode 521 formed on a semiconductor layer 51, a gate insulating film 53 formed on the semiconductor layer 51, and a gate electrode 54 formed on the gate insulating film 53. Furthermore, in the thin film transistor 5, a low impurity density region 512 and a low impurity density region 522 are formed on the semiconductor layer 51.

[0124] Here, if the Figure 5 As shown, the first light shielding body 541 and the second light shielding body 542 are formed in the same process as the process of forming the gate electrode 54 of the thin film transistor 5. The first light shielding body 541 and the second light shielding body 542 are formed on the same conductive layer as the gate electrode 54 and are formed of the same conductive material.

[0125] Next, an insulator 41 is formed to cover the thin film transistor 5. Figure 6As shown, a connection hole 411 and a connection hole 412 are formed in the insulator 41. The connection hole 411 is formed by removing the insulator 41 in the thickness direction in a region overlapping with the first main electrode 511 of the thin film transistor 5 and the first light shielding body 541. The connection hole 412 is formed by removing the insulator 41 in the thickness direction in a region overlapping with the second light shielding body 542. The connection holes 411 and 412 are each formed using, for example, photolithography technology and etching technology.

[0126] like Figure 7 As shown, the storage capacitor 6 is formed on the insulator 41. A part of the storage capacitor 6 is connected to the first main electrode 511 and the first light shielding body 541 through the connection hole 411. The other part of the storage capacitor 6 is connected to the second light shielding body 542 through the connection hole 412.

[0127] It should be noted that, in the same process as the process of forming the storage capacitor 6, the light shielding body 67 is formed on the electrode 65 of the storage capacitor 6.

[0128] like Figure 8 As shown, a light shielding body 68 is formed on the storage capacitor 6 .

[0129] Afterwards, as mentioned above Figure 1 As shown, the contact wiring 7, the video signal line 81, the wiring 82, the wiring 83, the liquid crystal portion 9, the optical lens 11, and the counter substrate 12 are formed in this order.

[0130] After the series of manufacturing steps are completed, the display device 1 according to the first embodiment is completed, and the manufacturing method ends.

[0131] [Effects]

[0132] The display device 1 according to the first embodiment is as follows Figure 1~Figure 4 As shown, a thin film transistor 5 and a storage capacitor 6 are provided.

[0133] The thin film transistor 5 includes a gate electrode 54 and a pair of first main electrodes 511 and a second main electrode 521 disposed on both sides of the gate electrode 54 in the gate length Lg direction. The storage capacitor 6 is disposed in a region overlapping the thin film transistor 5 and is electrically connected to the first main electrode 511 .

[0134] In addition, the display device 1 further includes a first light-blocking body 541 and a second light-blocking body 542 .

[0135] The first light shielding body 541 is disposed between the first main electrode 511 and the storage capacitor 6, and is disposed between the gate electrode 54 and the first main electrode 511. The first light shielding body 541 shields incident light in the direction of the gate length Lg. The second light shielding body 542 is disposed between the second main electrode 521 and the storage capacitor 6, and is disposed between the gate electrode 54 and the second main electrode 521. The second light shielding body 542 shields incident light in the direction of the gate length Lg.

[0136] The display device 1 configured in this way includes a first light shielding body 541 on the connection region side between the first main electrode 511 of the thin film transistor 5 and the storage capacitor 6, and includes a second light shielding body 542 on the connection region side between the second main electrode 521 and the video signal line 81. Therefore, the light shielding property of the thin film transistor 5 against incident light in the gate length Lg direction can be effectively improved.

[0137] In addition, the display device 1 is Figure 3 as well as Figure 4 As shown, a pair of third light shielding bodies 31 and fourth light shielding bodies 32 are provided. The third light shielding bodies 31 and the fourth light shielding bodies 32 are arranged on both sides of the gate electrode 54 in the gate width Wg direction of the thin film transistor 5, and are arranged along the thin film transistor 5. The third light shielding bodies 31 and the fourth light shielding bodies 32 shield incident light in the gate width Wg direction.

[0138] Therefore, the thin film transistor 5 can effectively improve the light shielding property against incident light in the gate width Wg direction in addition to the gate length Lg direction.

[0139] In addition, in the display device 1, if Figure 3 as well as Figure 4 As shown, the scanning signal line 3 is disposed on the side of the thin film transistor 5 opposite to the storage capacitor 6 . The third light shielding body 31 and the fourth light shielding body 32 are conductive and electrically connect the gate electrode 54 and the scanning signal line 3 .

[0140] Therefore, the third light shielding body 31 and the fourth light shielding body 32 constitute a part of the scanning signal line 3 connecting the scanning signal line 3 to the gate electrode 54 of the thin film transistor 5. In other words, since the third light shielding body 31 and the fourth light shielding body 32 are constituted by using a part of the scanning signal line 3, the third light shielding body 31 and the fourth light shielding body 32 can be simply constituted.

[0141] In addition, in the display device 1, if Figure 1~Figure 4 As shown, the first light shielding body 541 is electrically connected to the storage capacitor 6. That is, since the electric field effect can be generated from the first light shielding body 541, the electric field effect from the scanning signal line 3 can be offset in the thin film transistor 5. Therefore, the leakage current can be effectively suppressed or prevented in the thin film transistor 5.

[0142] In addition, in the display device 1, if Figure 1~Figure 3 As shown in FIG. 1 , the storage capacitor 6 is directly electrically connected to the first light shielding body 541 and the first main electrode 511 of the thin film transistor 5. To explain in detail, the storage capacitor 6 is connected to the first light shielding body 541 through the connection hole 411 formed on the insulator 41, and is also connected to the first main electrode 511. That is, compared with the case where the storage capacitor 6 is connected to the first main electrode 511 directly below it through the first light shielding body 541, the area of ​​the storage capacitor 6 can be increased along the step shape of the connection hole 411 in the arrow Z direction. Therefore, the capacitance value of the storage capacitor 6 can be increased.

[0143] In addition, if Figure 1~Figure 3 As shown in FIG. 1 , the display device 1 includes a second light shielding body 542. The second light shielding body 542 is electrically connected to the storage capacitor. To be described in detail, the storage capacitor 6 is connected to the second light shielding body 542 via a connection hole 412 formed in the insulator 41. Therefore, since the area of ​​the storage capacitor 6 can be increased in the arrow Z direction along the step shape of the connection hole 412, the capacitance value of the storage capacitor 6 can be further increased.

[0144] In addition, in the display device 1, if Figure 1 as well as Figure 2 As shown, the first light shielding body 541 and the second light shielding body 542 are formed on the same conductive layer with respect to the gate electrode 54 of the thin film transistor 5 and are formed by the same conductive material. Therefore, since the first light shielding body 541 and the second light shielding body 542 are formed by using the gate electrode 54, the first light shielding body 541 and the second light shielding body 542 can be simply formed.

[0145] As a method for manufacturing the display device 1, Figure 6 As shown, the first light shielding body 541 and the second light shielding body 542 are formed by the same process as the process of forming the gate electrode 54 of the thin film transistor 5. Therefore, the formation of the first light shielding body 541 and the second light shielding body 542 does not require adding a new process, and as a result, the number of manufacturing processes can be reduced.

[0146] In addition, in the display device 1, if Figure 1~Figure 4 As shown, the gate electrode 54 of the thin film transistor 5 is formed by one or more electrode materials selected from WSi, Si, W, Al, Cu, AlSi, AlCu, Ti and TiN. By using these electrode materials, it can be provided with light shielding properties, so the gate electrode 54 can be used to easily form the first light shielding body 541 and the second light shielding body 542.

[0147] In addition, in the display device 1, if Figure 3 as well as Figure 4 As shown, the first light-blocking body 541 and the second light-blocking body 542 are respectively disposed between the third light-blocking body 31 and the fourth light-blocking body 32. Therefore, the first light-blocking body 541 and the second light-blocking body 542 can be easily constructed with a simple structure.

[0148] Furthermore, in the display device 1, as Figure 1 As shown, the pixel electrode 91, the liquid crystal layer 93, and the common pixel electrode 95 are sequentially arranged on the side of the storage capacitor 6 opposite to the thin film transistor 5. Thus, a liquid crystal display device that can achieve the above-mentioned effects can be constructed.

[0149] <2. Second Embodiment>

[0150] use Fig. 9 , a display device 1 according to a second embodiment of the present disclosure will be described.

[0151] Note that in the second embodiment and subsequent embodiments, the same components as those of the display device 1 according to the first embodiment, or substantially the same components, are denoted by the same reference numerals, and duplicate descriptions are omitted.

[0152] [Configuration of Display Device 1]

[0153] Fig. 9 An example of a planar configuration of the pixel 10 in the display device 1 is shown.

[0154] like Fig. 9 As shown, in the display device 1 according to the second embodiment, in the display device 1 according to the first embodiment, the first light-blocking body 541 and the second light-blocking body 542 are respectively extended to the gate electrode 54 side.

[0155] To explain in detail, the first light shielding body 541 is extended to the gate electrode 54 side, so the first light shielding body 541 is overlapped from the first main electrode 511 as the second region to the low impurity density region 512 as the first region (see Figure 2 ). Similarly, since the second light shielding body 542 is extended to the gate electrode 54 side, the second light shielding body 542 is overlapped and arranged from the second main electrode 521 as the second region to the low impurity density region 522 as the first region.

[0156] In the thin film transistor 5, the scanning signal line 3 functions as a back gate, and due to the electric field effect from the scanning signal line 3, leakage current may be generated in the low impurity density region 512. In the low impurity density region 512, an electric field effect can be generated from the first light shielding body 541 relative to the electric field effect generated from the scanning signal line 3 side, so that the electric field effect can be offset. It should be noted that the structure that cancels the electric field effect can be adopted at least on the first light shielding body 541 side.

[0157] The components other than those described above are the same as or substantially the same as those of the display device 1 according to the first embodiment.

[0158] [Effects]

[0159] According to the display device 1 according to the second embodiment, it is possible to obtain the same operational effects as those obtainable by the display device 1 according to the first embodiment.

[0160] In addition, in the display device 1, if Fig. 9 (and reference Figure 2 ), a low impurity density region 512 is provided in a first region near the gate electrode 54 of the first main electrode 511 of the thin film transistor 5. The impurity density of the low impurity density region 512 is lower than the impurity density of the second region of the first main electrode 511 connected to the storage capacitor 6. In addition, the first light shielding body 541 is provided to overlap with the low impurity density region 512 (first region).

[0161] Therefore, in the low impurity density region 512, since the electric field effect can be generated from the first light shielding body 541, the electric field effect from the scanning signal line 3 can be offset. Therefore, in the thin film transistor 5, leakage current can be effectively suppressed or prevented.

[0162] <3. Third Embodiment>

[0163] use Fig.10 , a display device 1 according to a third embodiment of the present disclosure will be described.

[0164] [Configuration of Display Device 1]

[0165] Fig.10 An example of a planar configuration of the pixel 10 in the display device 1 is shown.

[0166] like Fig.10 As shown, in the display device 1 according to the third embodiment, the sizes of the first light-blocking body 541 and the second light-blocking body 542 are enlarged in the display device 1 according to the first embodiment or the second embodiment.

[0167] If described in detail, in the direction consistent with the gate width Wg direction, the size of the first light shielding body 541 and the second light shielding body 542 is larger than the size between the third light shielding body 31 and the fourth light shielding body 32. Here, the size of the third light shielding body 31 and the fourth light shielding body 32 in the direction consistent with the gate length Lg direction is shortened. In other words, the configuration is performed to avoid the first light shielding body 541 and the second light shielding body 542 from contacting the third light shielding body 31, and the first light shielding body 541 and the second light shielding body 542 from contacting the fourth light shielding body 32.

[0168] The components other than those described above are the same as or substantially the same as those of the display device 1 according to the first embodiment or the second embodiment.

[0169] [Effects]

[0170] According to the display device 1 according to the third embodiment, it is possible to obtain the same operational effects as those obtainable by the display device 1 according to the first embodiment or the second embodiment.

[0171] In addition, in the display device 1, if Fig.10 As shown, in the direction consistent with the gate width Wg direction, the size of the first light shielding body 541 and the second light shielding body 542 is larger than the size between the third light shielding body 31 and the fourth light shielding body 32. Therefore, the light shielding property against incident light in the gate length Lg direction of the thin film transistor 5 can be further effectively improved.

[0172] Furthermore, in the display device 1, as Fig.10 As shown, the side wall areas of the connection holes 411 and 412 can be increased as the sizes of the first light shielding body 541 and the second light shielding body 542 are expanded. Therefore, since the area of ​​the storage capacitor 6 can be further increased along the step shape of the connection holes 411 and 412, the capacitance value of the storage capacitor 6 can be further increased.

[0173] <4. Fourth Embodiment>

[0174] use Fig.11 as well as Fig.12 , a display device 1 according to a fourth embodiment of the present disclosure will be described.

[0175] [Configuration of Display Device 1]

[0176] Fig.11 An example of a planar configuration of the pixel 10 in the display device 1 is shown. Fig.12 An example of a schematic three-dimensional structure of the pixel 10 after being decomposed is shown.

[0177] like Fig.11 as well as Fig.12 As shown, in the display device 1 according to the fourth embodiment, the sizes of the connection holes 411 and the connection holes 412 are enlarged in the display device 1 according to the first embodiment or the second embodiment.

[0178] To explain in detail, in the direction consistent with the gate width Wg direction, the opening size of the connection hole 411, which is the connection area between the storage capacitor 6 and the first light shielding body 541, is larger than the size of the first light shielding body 541. As a result, the storage capacitor 6 is formed in the connection hole 411 along the step shape of the side surface of the first light shielding body 541.

[0179] Similarly, in the direction consistent with the gate width Wg direction, the opening size of the connection hole 412 as the connection area between the storage capacitor 6 and the second light shielding body 542 is larger than the size of the second light shielding body 542. As a result, the storage capacitor 6 is formed in the connection hole 412 along the step shape of the side surface of the second light shielding body 542.

[0180] The components other than those described above are the same as or substantially the same as those of the display device 1 according to the first embodiment or the second embodiment.

[0181] [Effects]

[0182] According to the display device 1 according to the fourth embodiment, it is possible to obtain the same operational effects as those obtainable by the display device 1 according to the first embodiment or the second embodiment.

[0183] In the display device 1, the connection hole 411 is expanded larger than the first light shielding body 541, and the connection hole 412 is expanded larger than the second light shielding body 542. Therefore, the area of ​​the storage capacitor 6 can be further increased, and thus the capacitance value of the storage capacitor 6 can be further increased.

[0184] <5. Fifth embodiment>

[0185] use Fig.13 , a display device 1 according to a fifth embodiment of the present disclosure will be described.

[0186] [Configuration of Display Device 1]

[0187] Fig.13 An example of a planar configuration of the pixel 10 in the display device 1 is shown.

[0188] like Fig.13As shown, in the display device 1 according to the fifth embodiment, as an application example of the display device 1 according to the third embodiment, the first light-blocking body 541 and the second light-blocking body 542 are respectively divided.

[0189] Specifically, the first light shielding body 541 is disposed on both sides of the thin film transistor 5 in a direction that coincides with the gate width Wg. Similarly, the second light shielding body 542 is disposed on both sides of the thin film transistor 5 in a direction that coincides with the gate width Wg.

[0190] The components other than those described above are the same as or substantially the same as those of the display device 1 according to the third embodiment.

[0191] [Effects]

[0192] According to the display device 1 according to the fifth embodiment, it is possible to obtain the same operational effects as those obtainable by the display device 1 according to the third embodiment.

[0193] <6. Application example to mobile objects>

[0194] The technology involved in the present disclosure (the present technology) can be applied to various products. For example, the technology involved in the present disclosure can also be implemented as a device mounted on any of the following types of mobile bodies: automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobile devices, airplanes, drones, ships, robots, etc.

[0195] Fig.14 This is a block diagram showing a schematic configuration example of a vehicle control system as an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0196] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. Fig.14 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound and image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are shown.

[0197] The drive system control unit 12010 controls the operation of devices associated with the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 functions as a control device for a drive force generating device such as an internal combustion engine or a drive motor for generating a drive force of the vehicle, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a brake device for generating a braking force of the vehicle.

[0198] The body system control unit 12020 controls the actions of various devices equipped on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as front lights, rear lights, brake lights, turn signals, or fog lights. In this case, radio waves or signals of various switches sent from a portable device that replaces a key can be input to the body system control unit 12020. The body system control unit 12020 receives input of these radio waves or signals and controls the unlocking device, power window device, lights, etc. of the vehicle.

[0199] The vehicle exterior information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to a camera 12031. The vehicle exterior information detection unit 12030 causes the camera 12031 to capture an image outside the vehicle and receive the captured image. The vehicle exterior information detection unit 12030 may also perform object detection processing or distance detection processing of a person, a vehicle, an obstacle, a sign, or characters on the road surface based on the received image.

[0200] The imaging unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. In addition, the light received by the imaging unit 12031 can be visible light or invisible light such as infrared light.

[0201] The in-vehicle information detection unit 12040 detects information in the vehicle. For example, a driver state detection unit 12041 for detecting the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera for photographing the driver, and the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level based on the detection information input from the driver state detection unit 12041, and can also determine whether the driver is dozing off.

[0202] The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information inside and outside the vehicle obtained by the vehicle outside information detection unit 12030 or the vehicle inside information detection unit 12040, and output a control instruction to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control to achieve the functions of ADAS (Advanced Driver Assistance System) including vehicle collision avoidance or impact mitigation, following driving based on the interval between vehicles, vehicle speed continuous driving, vehicle collision warning, or vehicle lane departure warning.

[0203] In addition, the microcomputer 12051 controls the driving force generating device, steering mechanism or braking device, etc. based on the information about the surroundings of the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, thereby enabling collaborative control for the purpose of autonomous driving, etc., which enables the vehicle to travel autonomously without relying on the driver's operation.

[0204] In addition, the microcomputer 12051 can output a control command to the body system control unit 12030 based on the information outside the vehicle acquired by the vehicle outside information detection unit 12030. For example, the microcomputer 12051 can control the front lights according to the position of the preceding vehicle or the oncoming vehicle detected by the vehicle outside information detection unit 12030, and perform cooperative control for the purpose of anti-glare such as switching the high beam to the low beam.

[0205] The audio and video output unit 12052 sends at least one of an audio and an image output signal to an output device capable of visually or auditorily notifying the passengers of the vehicle or the outside of the vehicle. Fig.14 In the example of FIG. 1 , as the output device, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0206] Fig.15 This is a diagram showing an example of the installation position of the imaging unit 12031.

[0207] exist Fig.15 In the figure, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0208] The camera units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, rearview mirror, rear bumper, rear door, and upper portion of the windshield in the vehicle 12100. The camera unit 12101 provided at the front nose and the camera unit 12105 provided at the upper portion of the windshield in the vehicle mainly acquire images in front of the vehicle 12100. The camera units 12102 and 12103 provided at the rearview mirror mainly acquire images on the side of the vehicle 12100. The camera unit 12104 provided at the rear bumper or rear door mainly acquires images at the rear of the vehicle 12100. The camera unit 12105 provided at the upper portion of the windshield in the vehicle is mainly used for detecting the preceding vehicle or pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0209] It should be pointed out that Fig.14 An example of the photographing range of the photographing units 12101 to 12104 is shown. The photographing range 12111 indicates the photographing range of the photographing unit 12101 provided at the front nose, the photographing ranges 12112 and 12113 respectively indicate the photographing ranges of the photographing units 12102 and 12103 provided at the rearview mirror, and the photographing range 12114 indicates the photographing range of the photographing unit 12104 provided at the rear bumper or the rear door. For example, by superimposing the image data photographed by the photographing units 12101 to 12104, a bird's-eye view image of the vehicle 12100 observed from above is obtained.

[0210] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0211] For example, the microcomputer 12051 obtains the distance to each solid object within the shooting range 12111 to 12114 and the change of the distance over time (relative speed to the vehicle 12100) based on the distance information obtained from the shooting units 12101 to 12104, thereby being able to extract the closest solid object on the path of the vehicle 12100, and the solid object that will travel at a predetermined speed (for example, 0 km / h or more) in the same direction as the vehicle 12100 as the leading vehicle. Furthermore, the microcomputer 12051 can set the inter-vehicle distance that should be ensured in advance in front of the leading vehicle, and perform automatic braking control (including tracking stop control), automatic acceleration control (including tracking start control), etc. In this way, cooperative control for the purpose of autonomous driving, etc., which is independent of the driver's operation, can be performed.

[0212] For example, the microcomputer 12051 can classify the three-dimensional object data related to the three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles and other three-dimensional objects based on the distance information obtained from the imaging units 12101 to 12104 and extract them for automatic avoidance of obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that can be visually recognized by the driver of the vehicle 12100 and obstacles that are difficult to visually recognize. Then, the microcomputer 12051 determines the collision risk indicating the degree of danger of collision with each obstacle, and when the collision risk is greater than the set value and there is a possibility of collision, the microcomputer 12051 outputs an alarm to the driver via the audio speaker 12061 and the display unit 12062, and performs forced deceleration and avoidance steering via the drive system control unit 12010, thereby enabling assisted driving for avoiding collisions.

[0213] At least one of the imaging units 12101 to 12104 may also be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can identify pedestrians by determining whether there are pedestrians in the images captured by the imaging units 12101 to 12104. The identification of pedestrians is performed, for example, by extracting feature points in the images captured by the imaging units 12101 to 12104, which are infrared cameras, and performing pattern matching processing on a series of feature points representing the contour of an object to determine whether there are pedestrians. When the microcomputer 12051 determines that there are pedestrians in the images captured by the imaging units 12101 to 12104 and identifies the pedestrians, the sound and image output unit 12052 controls the display unit 12062 to display the identified pedestrians superimposed with a square contour line for emphasis. In addition, the sound and image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0214] An example of a vehicle control system to which the technology of the present disclosure can be applied is described above. The above-described configuration of the technology of the present disclosure can be applied to the imaging unit 12031. By applying the technology of the present disclosure to the imaging unit 12031, a more simple configuration of the imaging unit 12031 can be realized.

[0215] <7. Application example to endoscopic surgery system>

[0216] The technology involved in the present disclosure (the present technology) can be applied to various products. For example, the technology involved in the present disclosure can also be applied to an endoscopic surgery system.

[0217] Fig.16 This is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology involved in the present disclosure (the present technology) can be applied.

[0218] exist Fig.16 , the figure shows a situation where an operator (doctor) 11131 uses an endoscopic surgery system 11000 to perform surgery on a patient 11132 on a bed 11133. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, a pneumoperitoneum tube 11111, other surgical tools 11110 such as an energy treatment device 11112, a support arm device 11120 supporting the endoscope 11100, and a cart 11200 equipped with various devices for endoscopic surgery.

[0219] The endoscope 11100 is composed of a lens barrel 11101 inserted into a body cavity of a patient 11132 over a predetermined length from the front end, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is a so-called hard scope having a hard lens barrel 11101, but the endoscope 11100 may be a so-called soft scope having a soft lens barrel.

[0220] An opening in which an objective lens is embedded is provided at the front end of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100. Light generated by the light source device 11203 is guided to the front end of the lens barrel through a light guide plate extending inside the lens barrel 11101, and irradiated toward an observation object in the body cavity of the patient 11132 via the objective lens. It should be noted that the endoscope 11100 may be a direct-view mirror, a stereoscopic mirror, or a side-view mirror.

[0221] An optical system and an imaging element are provided inside the camera head 11102. The reflected light (observation light) from the observation object is collected by the optical system to the imaging element. The observation light is photoelectrically converted by the imaging element, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated. The image signal is sent to the camera control unit (CCU: Camera Control Unit) 11201 as RAW data.

[0222] The CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and uniformly controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing such as development processing (demosaic processing) on ​​the image signal for displaying an image based on the image signal.

[0223] The display device 11202 displays an image based on an image signal subjected to image processing by the CCU 11201 under the control of the CCU 11201 .

[0224] The light source device 11203 is constituted by a light source such as an LED (light emitting diode), and supplies irradiation light for imaging a surgical site or the like to the endoscope 11100 .

[0225] The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (such as the type of irradiation light, magnification, and focal length) of the endoscope 11100.

[0226] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for cauterizing, incising or sealing blood vessels of tissues. The pneumoperitoneum device 11206 supplies gas into the body cavity of the patient 11132 via the pneumoperitoneum tube 11111 in order to expand the body cavity of the patient 11132 for the purpose of ensuring the field of view of the endoscope 11100 and ensuring the working space of the operator. The recorder 11207 is a device capable of recording various information related to the operation. The printer 11208 is a device capable of printing various information related to the operation in various forms such as text, images or charts.

[0227] It should be noted that the light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, a white light source composed of an LED, a laser light source, or a combination thereof. In the case where the white light source is composed of a combination of RGB laser light sources, since the output intensity and output timing of each color (each wavelength) can be controlled with high precision, the white balance of the captured image can be adjusted in the light source device 11203. In addition, in this case, by irradiating the observation object with lasers from the RGB laser light sources respectively in a time-sharing manner and controlling the drive of the imaging element of the camera head 11102 in synchronization with the irradiation timing, it is also possible to capture images corresponding to RGB in a time-sharing manner. According to this method, a color image can be obtained even if a color filter is not provided in the imaging element.

[0228] In addition, the light source device 11203 can also be controlled to change the intensity of the light output at a predetermined time. By controlling the driving of the imaging element of the camera head 11102 in synchronization with the timing of the change in the intensity of the light, images are acquired in a time-sharing manner, and the images are synthesized, so-called high dynamic range images without black spots and white spots can be generated.

[0229] In addition, the light source device 11203 may also be configured to supply light of a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissues, by irradiating light of a narrower band than the irradiation light (i.e., white light) during normal observation, specific tissues such as blood vessels on the mucosal surface can be photographed with high contrast, i.e., so-called narrow band imaging (Narrow Band Imaging) can be performed. Alternatively, in special light observation, fluorescence observation in which an image is obtained by fluorescence generated by irradiating excitation light can be performed. In fluorescence observation, excitation light can be irradiated to body tissues and fluorescence from the body tissues can be observed (autofluorescence observation), or while locally injecting reagents such as indocyanine green (ICG) into body tissues, excitation light corresponding to the fluorescence wavelength of the reagent can be irradiated to the body tissues and a fluorescence image can be obtained. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0230] Fig.17 It is shown Fig.16 A block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown.

[0231] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so as to be able to communicate with each other.

[0232] The lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. Observation light taken in from the front end of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of a plurality of lenses including a zoom lens and a focus lens.

[0233] The imaging element constituting the imaging unit 11402 may be one (so-called single-board type) or multiple (so-called multi-board type). In the case where the imaging unit 11402 is composed of a multi-board type, for example, image signals corresponding to RGB respectively may be generated by each imaging element, and a color image may be obtained by synthesizing them. Alternatively, the imaging unit 11402 may also be configured to have a pair of imaging elements for respectively acquiring image signals for the right eye and the left eye corresponding to a 3D (dimensional) display. By performing a 3D display, the operator 11131 can more accurately grasp the depth of the biological tissue at the surgical site. It should be noted that in the case where the imaging unit 11402 is composed of a multi-board type, the lens unit 11401 may be provided with a plurality of systems corresponding to each imaging element.

[0234] In addition, the imaging unit 11402 may not necessarily be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101 just behind the objective lens.

[0235] The driving unit 11403 is composed of an actuator, and moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. Thus, the magnification and focus of the captured image can be appropriately adjusted by the imaging unit 11402.

[0236] The communication unit 11404 is composed of a communication device for transmitting and receiving various information with the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0237] In addition, the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201, and supplies it to the camera head control unit 11405. The control signal includes information related to shooting conditions, such as information indicating a frame rate for specifying a captured image, information indicating an exposure value for specifying a shooting time, and / or information indicating a magnification and focus for specifying a captured image.

[0238] It should be noted that the above-mentioned shooting conditions such as frame rate, exposure value, magnification, focus, etc. can be appropriately specified by the user, or can be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the so-called AE (Auto Exposure) function, AF (Auto Focus) function and AWB (Auto White Balance) function are installed in the endoscope 11100.

[0239] The camera head control unit 11405 controls the driving of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404 .

[0240] The communication unit 11411 is composed of a communication device for transmitting and receiving various information with the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0241] In addition, the communication unit 11411 transmits a control signal for controlling the driving of the camera head 11102 to the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0242] The image processing unit 11412 performs various image processing on the image signal transmitted from the camera head 11102 as RAW data.

[0243] The control unit 11413 performs various controls related to imaging of the surgical site, etc. by the endoscope 11100 and display of the captured images obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102 .

[0244] In addition, the control unit 11413 causes the display device 11202 to display a captured image showing the surgical site, etc., based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may also use various image recognition technologies to recognize various objects in the captured image. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, and water vapor when the energy treatment device 11112 is used, etc. by detecting the shape and color of the edges of the objects included in the captured image. The control unit 11413 may also use the recognition result to superimpose various surgical auxiliary information on the image of the surgical site when causing the display device 11202 to display the captured image. By superimposing and displaying the surgical auxiliary information and showing it to the operator 11131, the burden on the operator 11131 can be reduced, and the operator 11131 can more reliably perform the operation.

[0245] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electric signal cable corresponding to communication of electric signals, an optical fiber corresponding to optical communication, or a composite cable thereof.

[0246] Here, in the example shown in the figure, communication is performed by wire using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0247] An example of an endoscopic surgery system to which the technology of the present disclosure can be applied is described above. The above-described configuration of the technology of the present disclosure can be applied to the display device 11202. By applying the technology of the present disclosure to the display device 11202, leakage current can be effectively suppressed or prevented, and a display device 11202 with excellent display performance can be provided. In addition, since the capacitance value of the storage capacitor can be increased, the number of pixels of the display device 11202 can be increased.

[0248] It should be noted that, here, an endoscopic surgery system is described as an example, but the technology involved in the present disclosure can also be applied to other systems such as a microscope surgery system.

[0249] <8. Other Implementation Methods>

[0250] The present technology is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present technology.

[0251] For example, the solid-state imaging devices according to the first to fifth embodiments described above may be combined with the display devices according to two or more embodiments.

[0252] In addition, the present technology can also be applied to display devices constructed by organic electroluminescence.

[0253] A display device according to a first embodiment of the present disclosure includes a thin film transistor and a storage capacitor.

[0254] The thin film transistor includes a gate electrode and a pair of first and second main electrodes disposed on both sides of the gate electrode in the gate length direction. The storage capacitor is disposed in a region overlapping the thin film transistor and is electrically connected to the first main electrode.

[0255] Furthermore, the display device further includes a first light-blocking body and a second light-blocking body.

[0256] The first light shield is disposed between the first main electrode and the storage capacitor, and between the gate electrode and the first main electrode. The first light shield shields incident light in the length direction of the gate. The second light shield is disposed between the second main electrode and the storage capacitor, and between the gate electrode and the second main electrode. The second light shield shields incident light in the length direction of the gate.

[0257] The display device configured in this way can effectively improve the light shielding property against incident light in the gate length direction of the thin film transistor.

[0258] The display device according to the second embodiment of the present disclosure includes a pair of third light shielding bodies and a fourth light shielding body in the display device according to the first embodiment. The third light shielding body and the fourth light shielding body are arranged on both sides of the gate electrode in the gate width direction of the thin film transistor and are arranged along the thin film transistor. The third light shielding body and the fourth light shielding body shield incident light in the gate width direction.

[0259] Therefore, the thin film transistor can effectively improve the light shielding property against incident light in not only the gate length direction but also the gate width direction.

[0260] <Composition of this technology>

[0261] The present technology has the following configuration. According to the present technology having the following configuration, it is possible to provide a display device that can effectively improve the light shielding property against incident light in the gate length direction of a thin film transistor. (1)

[0263] A display device comprising:

[0264] A thin film transistor having a gate electrode and a pair of first main electrodes and a second main electrode arranged on both sides of the gate electrode in a gate length direction;

[0265] a storage capacitor disposed in a region overlapping the thin film transistor, the storage capacitor being electrically connected to the first main electrode;

[0266] a first light shielding body disposed between the first main electrode and the storage capacitor and between the gate electrode and the first main electrode to shield incident light in a gate length direction; and

[0267] The second light shielding body is disposed between the second main electrode and the storage capacitor and between the gate electrode and the second main electrode, and shields incident light in the gate length direction. (2)

[0269] According to the display device described in (1),

[0270] The display device further includes a pair of third light shielding bodies and a fourth light shielding body, which are arranged on both sides of the gate electrode in the gate width direction and along the thin film transistor to shield incident light in the gate width direction. (3)

[0272] According to the display device described in (2),

[0273] A scanning signal line is provided on the side of the thin film transistor opposite to the storage capacitor.

[0274] The third light-shielding body and the fourth light-shielding body are conductive and electrically connect the gate electrode and the scanning signal line. (4)

[0276] The display device according to any one of (1) to (3),

[0277] The first light shielding body is electrically connected to the storage capacitor. (5)

[0279] According to the display device described in (4),

[0280] The storage capacitor is directly electrically connected to the first light shielding body and the first main electrode. (6)

[0282] According to the display device described in (4) or (5),

[0283] The impurity density of a first region of the first main electrode near the gate electrode is lower than the impurity density of a second region of the first main electrode connected to the storage capacitor.

[0284] The first light-blocking body is disposed overlapping the first region. (7)

[0286] The display device according to any one of (1) to (4),

[0287] The second light shielding body is electrically connected to the storage capacitor. (8)

[0289] The display device according to any one of (1) to (7),

[0290] The first light-shielding body and the second light-shielding body are both formed on the same conductive layer with respect to the gate electrode and are formed of the same conductive material. (9)

[0292] The display device according to any one of (1) to (8),

[0293] The gate electrode is formed of one or more electrode materials selected from WSi, Si, W, Al, Cu, AlSi, AlCu, Ti and TiN. (10)

[0295] According to the display device described in (2),

[0296] The first light-blocking body and the second light-blocking body are respectively disposed between the third light-blocking body and the fourth light-blocking body. (11)

[0298] According to the display device described in (2) or (10),

[0299] The first light shielding body and the second light shielding body are respectively extended to one side of the gate electrode. (12)

[0301] According to the display device described in (2),

[0302] In a direction that coincides with the gate width direction, the sizes of the first light-blocking body and the second light-blocking body are larger than the size between the third light-blocking body and the fourth light-blocking body. (13)

[0304] According to the display device described in (2),

[0305] In a direction that coincides with the gate width direction, a size of a connection region between the storage capacitor and the first light shielding body is larger than a size of the first light shielding body.

[0306] In a direction that coincides with a gate width direction, a size of a connection region between the storage capacitor and the second light-shielding body is larger than a size of the second light-shielding body. (14)

[0308] According to the display device described in (2),

[0309] The first light shielding body is arranged on the side of the thin film transistor in a direction consistent with the gate width direction.

[0310] The second light-shielding body is disposed on a side portion of the thin film transistor in a direction that coincides with a gate width direction. (15)

[0312] The display device according to any one of (1) to (14),

[0313] A pixel electrode, a liquid crystal layer, and a common pixel electrode are sequentially arranged on the side of the storage capacitor opposite to the thin film transistor.

[0314] This application claims priority based on Japanese Patent Application No. 2022-167872 filed with the Japan Patent Office on October 19, 2022, and all contents of that application are incorporated herein by reference.

[0315] Although various modifications, combinations, sub-combinations and alterations may occur to those skilled in the art depending on design requirements and other factors, it should be understood that these are all included within the scope of the appended claims and the equivalents thereof.

Claims

1. A display device comprising: A thin film transistor having a gate electrode and a pair of first main electrodes and a second main electrode arranged on both sides of the gate electrode in a gate length direction; a storage capacitor disposed in a region overlapping the thin film transistor, the storage capacitor being electrically connected to the first main electrode; a first light shielding body disposed between the first main electrode and the storage capacitor and between the gate electrode and the first main electrode to shield incident light in the gate length direction; as well as The second light shielding body is disposed between the second main electrode and the storage capacitor and between the gate electrode and the second main electrode, and shields incident light in the gate length direction.

2. The display device according to claim 1, wherein: The display device further includes a pair of third light shielding bodies and a fourth light shielding body, which are arranged on both sides of the gate electrode in the gate width direction and along the thin film transistor to shield incident light in the gate width direction.

3. The display device according to claim 2, wherein: A scanning signal line is provided on the side of the thin film transistor opposite to the storage capacitor. The third light-shielding body and the fourth light-shielding body are conductive and electrically connect the gate electrode and the scanning signal line.

4. The display device according to claim 3, wherein: The first light shielding body is electrically connected to the storage capacitor.

5. The display device according to claim 4, wherein: The storage capacitor is directly electrically connected to the first light shielding body and the first main electrode.

6. The display device according to claim 4, wherein: The impurity density of a first region of the first main electrode near the gate electrode is lower than the impurity density of a second region of the first main electrode connected to the storage capacitor. The first light-shielding body is disposed overlapping the first region.

7. The display device according to claim 1, wherein: The second light shielding body is electrically connected to the storage capacitor.

8. The display device according to claim 1, wherein: The first light-shielding body and the second light-shielding body are both formed on the same conductive layer with respect to the gate electrode and are formed of the same conductive material.

9. The display device according to claim 8, wherein: The gate electrode is formed of one or more electrode materials selected from WSi, Si, W, Al, Cu, AlSi, AlCu, Ti and TiN.

10. The display device according to claim 2, wherein: The first light-blocking body and the second light-blocking body are respectively disposed between the third light-blocking body and the fourth light-blocking body.

11. The display device according to claim 10, wherein: The first light shielding body and the second light shielding body are respectively extended to one side of the gate electrode.

12. The display device according to claim 2, wherein: In a direction that coincides with the gate width direction, the sizes of the first light-blocking body and the second light-blocking body are larger than the size between the third light-blocking body and the fourth light-blocking body.

13. The display device according to claim 2, wherein: In a direction that coincides with the gate width direction, a size of a connection region between the storage capacitor and the first light shielding body is larger than a size of the first light shielding body. In a direction that coincides with a gate width direction, a size of a connection region between the storage capacitor and the second light-shielding body is larger than a size of the second light-shielding body.

14. The display device according to claim 2, wherein: The first light shielding body is arranged on the side of the thin film transistor in a direction consistent with the gate width direction. The second light-shielding body is disposed on a side portion of the thin film transistor in a direction that coincides with a gate width direction.

15. The display device according to claim 1, wherein: A pixel electrode, a liquid crystal layer, and a common pixel electrode are sequentially arranged on the side of the storage capacitor opposite to the thin film transistor.

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