Manufacturing method of intracranial deep electrode device

Abstract

The invention belongs to the technical field of medical instrument manufacturing, and particularly relates to a manufacturing method of an intracranial deep electrode device, which comprises the following steps: S1, carrying out laser welding on a macro / micro electrode and a CFX electrode wire, and carrying out laser drilling on a PTFE outer tube; s2, mounting the macro-microelectrode on the PTFE outer tube, and primarily fixing the macro-microelectrode by using a fixing tool; s3, the CFX electrode wire is guided through a mandrel of the corresponding size, and a line sequence is marked after the CFX electrode wire is led out; s4, a new PTFE outer pipe is taken again and installed to be flush with the first outer pipe through the core shaft, in this way, along with internal installation, the size of the PTFE outer pipe is decreased, installation of 15 PTFE outer pipes is completed all the time, and final fixing of the macro electrode and the micro electrode is completed; s5, after the macro electrode and the micro electrode are installed, a Tip electrode is installed on the head, electrode leads are all led out and then welded to a PCB at the rear end, the problem of electromagnetic interference isolation can be effectively solved, and the stability during brain electrode implantation is remarkably improved.

Description

Technical Field

[0001] The invention belongs to the technical field of medical device manufacturing, and in particular relates to a manufacturing method of a deep intracranial electrode device. Background Art

[0002] Stereotactic EEG technology plays a vital role in the accurate diagnosis and efficient treatment of epilepsy patients. This technology precisely implants intracranial electrodes to capture and deeply analyze brain electrical signals, thereby accurately locking the location and characteristics of the patient's lesions. These valuable data provide a scientific basis for customizing personalized treatment plans and greatly improve the success rate of treatment. Before surgery, the evaluation of patients is particularly critical, and the analysis of brain electrical signals is the core of the evaluation. At present, although intracranial electrodes can capture key EEG signals, the existing products have the problem of insufficient consistency, which makes it difficult for the captured signals to accurately correspond to the same brain position, which poses a challenge to signal analysis and precise treatment. To solve this problem, we focus on the development of a new generation of intracranial electrode products, aiming to ensure the consistency of the position of the electrode in the cannula while enhancing the anti-interference ability. These excellent performance electrodes can stably and reliably monitor brain electrical signals, providing a solid foundation for precise control of treatment, thereby optimizing the diagnosis and treatment process and helping patients recover their health.

[0003] The Chinese patent application number CN202222839508.3 discloses a deep electrode, including an inner tube, an outer tube, an electrode contact and a wire, wherein the outer tube is sleeved on the outside of the inner tube; the electrode contact is connected to the outside of the outer tube; the wire is located between the inner tube and the outer tube, and the distal end of the wire is passed through the outer tube and connected to the electrode contact. In this embodiment, an outer tube is provided to install the electrode contact, so the wire can be set on the outside of the inner tube, reducing damage to the wire when the wire is guided by a tool to move in the tube, reducing the difficulty of operation, and improving the operation efficiency.

[0004] However, the above existing technologies have the following problems: 1. All electrode wires are concentrated in a single channel, which often leads to parasitic capacitance and mutual inductance between electrode wires, thus causing crosstalk problems, especially between parallel wires. Such phenomena will seriously affect signal integrity, especially when transmitting weak low-level analog signals. In the detection of four types of EEG signals, these signals are usually only at the microvolt level, which is more susceptible to incomplete or distorted signals; 2. In order to increase the stiffness of the electrode, mainstream products on the market often have built-in tungsten wire or nickel-titanium wire in the design. These metals can heat themselves under the influence of electromagnetic fields, which has adverse effects. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, the present invention provides a method for manufacturing an intracranial deep electrode device to solve the above-mentioned existing problems.

[0006] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0007] A method for manufacturing an intracranial deep electrode device comprises the following steps:

[0008] S1, laser welding of macro-microelectrodes and CFX electrode wires, and laser drilling of PTFE outer tubes;

[0009] S2, installing the macro-microelectrode on the PTFE outer tube, and using a fixing tool to initially fix the macro-microelectrode;

[0010] The S3 and CFX electrode wires are guided by mandrels of corresponding sizes, and the wire sequence is marked after they are led out;

[0011] S4, take another new PTFE outer tube, use the mandrel to install it flush with the first outer tube, and so on. As the inner tubes are installed, the size of the PTFE outer tubes becomes smaller, and 15 tubes are installed to complete the final fixation of the macro-microelectrode;

[0012] S5. After the macro-microelectrode is installed, the Tip electrode is installed on the head. After all the electrode leads are led out, they are soldered to the PCB board at the rear end.

[0013] Compared with the prior art, the present invention has the following beneficial effects:

[0014] The present invention can effectively solve the problem of blocking electromagnetic interference and significantly improve the stability of brain electrode implantation. Through the unique layered tube structure design, it not only enhances the stiffness of the electrode, but also ensures an excellent electromagnetic shielding effect, thereby ensuring the stability and reliability of product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a structural schematic diagram of an embodiment of a method for manufacturing an intracranial deep electrode device of the present invention;

[0016] Figure 2 A cross-sectional schematic diagram of an embodiment of a method for manufacturing an intracranial deep electrode device according to the present invention;

[0017] The reference numerals in the drawings of the specification include:

[0018] Tip electrode S101, macro-microelectrode S102, CFX electrode wire S103 (blue represents line), PTFE outer tube S104. DETAILED DESCRIPTION

[0019] In order to enable those skilled in the art to better understand the present invention, the technical solution of the present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0020] Among them, the drawings are only used for illustrative explanations, and they only represent schematic diagrams rather than actual pictures, and should not be understood as limitations on this patent; in order to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0021] Example:

[0022] like Figure 1-Figure 2 As shown, a method for manufacturing an intracranial deep electrode device of the present invention comprises the following steps:

[0023] S1, laser welding of macro-microelectrodes and CFX electrode wires, and laser drilling of PTFE outer tubes;

[0024] S2, installing the macro-microelectrode on the PTFE outer tube, and using a fixing tool to initially fix the macro-microelectrode;

[0025] The S3 and CFX electrode wires are guided by mandrels of corresponding sizes, and the wire sequence is marked after they are led out;

[0026] S4, take another new PTFE outer tube, use the mandrel to install it flush with the first outer tube, and so on. As the inner tubes are installed, the size of the PTFE outer tubes becomes smaller, and 15 tubes are installed to complete the final fixation of the macro-microelectrode;

[0027] S5. After the macro-microelectrode is installed, the Tip electrode is installed on the head. After all the electrode leads are led out, they are soldered to the PCB board at the rear end.

[0028] The specific implementation process is as follows:

[0029] The S102 macro-microelectrode is welded to the S103CFX electrode wire by laser welding. The outer S104 PTFE outer tube is drilled with laser, and the electrode is installed on the outer tube. The S102 macro-microelectrode is initially fixed using a fixing tool. The S103CFX electrode wire is guided out using a mandrel of corresponding size, and the line sequence is marked after it is led out. Then take another S104 PTFE outer tube and use the mandrel to install it flush with the first outer tube. This is repeated by analogy. As the internal installation progresses, the size of the PTFE outer tube becomes smaller until 15 tubes are installed. After the S102 macro-microelectrode is installed, the S101Tip electrode is installed on the head. After all the electrode leads are led out, they are soldered to the rear PCB board.

[0030] Precision electrode manufacturing and installation process:

[0031] 1. Precision laser welding technology: S102 macro-micro electrode and S103CFX electrode wire are connected by laser welding technology. This technology can ensure high precision and strength of the connection point.

[0032] 2. Laser drilling technology: Laser drilling technology is used to accurately drill holes on the outer S104 PTFE (polytetrafluoroethylene) outer tube. This ensures the installation position of the electrode and the accuracy of the hole.

[0033] 3. Electrode installation: Install the welded electrode into the PTFE outer tube. This step requires precise operation to ensure the correct position of the electrode.

[0034] 4. Preliminary fixation: Use professional fixing tools to preliminarily fix the S102 macro-microelectrode to ensure that the electrode will not shift during subsequent operations.

[0035] 5. Precision Guidance: The S103CFX electrode wire is precisely guided by a mandrel of matching size to ensure the correct direction of the electrode wire during installation.

[0036] 6. Wire sequence marking: The wire sequence should be marked immediately after the electrode wire is led out. This can ensure the correct connection of the electrode wire in the circuit and improve the accuracy and efficiency of installation.

[0037] The entire process embodies high-precision and high-efficiency manufacturing technology, which is crucial to ensuring the performance and reliability of the electrode.

[0038] Follow the above steps to assemble the layered tube structure, use catheters between electrodes to effectively separate and isolate electromagnetic interference, ensure stable and reliable product performance, eliminate temperature rise of electrodes, and reduce the impact on the brain.

[0039] The above are only embodiments of the present invention. The common knowledge such as the known specific structures and characteristics in the scheme is not described in detail here. The ordinary technicians in the relevant field are aware of all the common technical knowledge in the technical field of the invention before the application date or priority date, can obtain all the existing technologies in the field, and have the ability to apply the conventional experimental means before that date. The ordinary technicians in the relevant field can improve and implement the scheme in combination with their own abilities under the enlightenment given by this application. Some typical known structures or known methods should not become obstacles for the ordinary technicians in the relevant field to implement this application. It should be pointed out that for the technicians in this field, without departing from the structure of the present invention, several deformations and improvements can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicality of the patent.

[0040] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "inner", "outer", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as a limitation on this patent. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0041] In the description of the present invention, unless otherwise clearly specified and limited, if the term "connection" or the like appears to indicate the connection relationship between components, the term should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two components or the interaction relationship between two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

Claims

1. A method for manufacturing an intracranial deep electrode device, characterized in that: The steps include: S1, laser welding of macro-microelectrodes and CFX electrode wires, and laser drilling of PTFE outer tubes; S2, installing the macro-microelectrode on the PTFE outer tube, and using a fixing tool to initially fix the macro-microelectrode; The S3 and CFX electrode wires are guided by mandrels of corresponding sizes, and the wire sequence is marked after they are led out; S4, take another new PTFE outer tube, use the mandrel to install it flush with the first outer tube, and so on. As the inner tubes are installed, the size of the PTFE outer tubes becomes smaller, and 15 tubes are installed to complete the final fixation of the macro-microelectrode; S5. After the macro-microelectrode is installed, the Tip electrode is installed on the head. After all the electrode leads are led out, they are soldered to the PCB board at the rear end.

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