Crystal line adjustment method and device, electronic equipment and computer readable storage medium

Abstract

The invention relates to a crystal line adjusting method and device, electronic equipment and a computer readable storage medium, and belongs to the field of computers. The crystal line adjusting method comprises the steps that according to obtained circumferential scanning data of a silicon rod, the convexity of all local maximum value points in the circumferential scanning data of the silicon rod is determined, and the circumferential scanning data of the silicon rod comprises a plurality of data points collected along the peripheral contour of the silicon rod; the N local maximum value points are combined, at least one maximum value point set is obtained, the N local maximum value points are the local maximum value points with the front protrusions in all the local maximum value points, and N is an integer larger than or equal to 4; when the angle values of the maximum value points in the at least one maximum value point group do not meet the first crystal line error condition, screening out a target maximum value point group of which the angle values of the maximum value points meet a second crystal line error condition from the at least one maximum value point group; and determining a target crystal line of the silicon rod according to the adjustment angle value of each maximum value point in the target maximum value point group.

Description

Technical Field

[0001] The present application belongs to the field of computers, and specifically relates to a crystal line adjustment method, device, electronic device and computer-readable storage medium. Background Art

[0002] When processing silicon rods, the existing wire-cutting integrated machine needs to draw auxiliary lines on the end face of the silicon rod manually, and manually confirm the crystal line to ensure that the crystal line processed by the equipment is not cut off; currently, before loading the silicon rod, the integrated machine needs to draw auxiliary lines manually, and after loading, it is calibrated with the reference of the drawn auxiliary lines and the workbench. This process requires manual rotation of the single crystal, drawing auxiliary lines, manual confirmation and adjustment, etc., which is relatively cumbersome. In addition, if the crystal line on the silicon rod does not meet the crystal line error requirements, manual crystal line adjustment is required, but manual crystal line adjustment cannot ensure the accuracy of crystal line adjustment, and the adjustment efficiency is low. Summary of the invention

[0003] In view of this, the purpose of the present application is to provide a crystal line adjustment method, device, electronic device and computer-readable storage medium to improve the problem that manual crystal line adjustment cannot ensure the accuracy of crystal line adjustment and the adjustment efficiency is low.

[0004] The embodiment of the present application is implemented as follows:

[0005] In a first aspect, an embodiment of the present application provides a crystal line adjustment method, comprising: determining, based on acquired silicon rod circumferential scanning data, the convexity of all local maximum points in the silicon rod circumferential scanning data, wherein the silicon rod circumferential scanning data includes multiple data points collected along the outer peripheral contour of the silicon rod; combining N local maximum points to obtain at least one maximum point group, wherein the N local maximum points are local maximum points with the highest convexity among all the local maximum points, and N is an integer greater than or equal to 4; when the angle values ​​of the maximum points in the at least one maximum point group do not meet the first crystal line error condition, screening out a target maximum point group whose angle values ​​of the maximum points meet the second crystal line error condition from the at least one maximum point group; determining the target crystal line of the silicon rod according to the adjusted angle value of each maximum point in the target maximum point group.

[0006] In the embodiment of the present application, since the M crystal lines on the silicon rod (M raised lines on the silicon rod) are more raised than other places, when it is impossible to screen out a maximum point group that meets the first crystal line error condition from at least one maximum point group of the first N local maximum point combinations, a target maximum point group whose angle values ​​of the maximum points meet the second crystal line error condition is screened out, and the target crystal line of the silicon rod can be determined according to the adjusted angle value of each maximum point in the target maximum point group. In this way, the angular position of the actual crystal line on the silicon rod can be detected quickly and accurately, and when the actual crystal line cannot meet the first crystal line error condition, the angle value corresponding to each maximum point in the target maximum point group can be automatically adjusted, so that the target crystal line of the silicon rod can be determined according to the adjusted angle value of each maximum point in the target maximum point group, thereby solving the problem that the current manual crystal line adjustment cannot ensure the accuracy of the crystal line adjustment and the adjustment efficiency is low.

[0007] In combination with a possible implementation manner of the embodiment of the first aspect, based on the acquired circumferential scanning data of the silicon rod, the convexity of all local maximum points in the circumferential scanning data of the silicon rod is determined, including: based on the circumferential scanning data of the silicon rod, determining the left interval and the right interval of each local maximum point; based on the circumferential scanning data of the silicon rod, obtaining the left zone minimum point of each local maximum point in the left interval and the right zone minimum point in the right interval; according to the left zone minimum point and the right zone minimum point of each local maximum point, obtaining the convexity of each local maximum point.

[0008] In the embodiment of the present application, by determining the left area minimum point of each local maximum point in the left interval and the right area minimum point in the right interval, and thereby determining the convexity of each local maximum point, the convexity of each local maximum point can be determined quickly and accurately.

[0009] In combination with a possible implementation method of the first aspect, based on the circumferential scanning data of the silicon rod, the left interval and the right interval of each local maximum point are determined, including: for each local maximum point, according to the horizontal extension line of the local maximum point and the scanning curve corresponding to the circumferential scanning data of the silicon rod, the left interval and the right interval of the local maximum point are obtained.

[0010] In the embodiment of the present application, based on the horizontal extension line of the local maximum point and the scanning curve corresponding to the circumferential scanning data of the silicon rod, the left interval and the right interval of the local maximum point can be quickly obtained to provide support for the subsequent accurate determination of the left area minimum point of each local maximum point in the left interval and the right area minimum point in the right interval.

[0011] In combination with a possible implementation method of the first aspect, according to the left area minimum point and the right area minimum point of each local maximum point, the convexity of each local maximum point is obtained, including: for each local maximum point, obtaining a larger value point from the left area minimum point and the right area minimum point of the local maximum point as a target comparison value point, obtaining the absolute height difference between the local maximum point and the target comparison value point, and obtaining the convexity of the local maximum point according to the absolute height difference.

[0012] In an embodiment of the present application, for each local maximum point, a larger value point is obtained from the minimum value point in the left area and the minimum value point in the right area of ​​the local maximum point as a target comparison value point, and then the absolute height difference between the local maximum point and the target comparison value point is obtained, and the protrusion of the local maximum point is obtained based on the absolute height difference, thereby improving the guarantee for the subsequent accurate detection of silicon rod crystal lines; and a larger value point is obtained from the minimum value point in the left area and the minimum value point in the right area of ​​the local maximum point as a target comparison value point, thereby reducing the cumulative error and improving accuracy.

[0013] In combination with a possible implementation manner of the embodiment of the first aspect, before determining the convexity of all local maximum points in the circumferential scanning data of the silicon rod based on the acquired circumferential scanning data of the silicon rod, the method also includes: obtaining all data point groups in the circumferential scanning data of the silicon rod, each data point group contains M consecutive data points, where M is an integer not less than 3; traversing each data point group, and screening out the point with the largest intermediate value in each data point group, where the point with the largest intermediate value in each data point group is one of the local maximum points; based on the point with the largest intermediate value in each data point group, obtaining all local maximum points in the circumferential scanning data of the silicon rod.

[0014] In the embodiment of the present application, the silicon rod circumferential scanning data is divided into multiple data point groups (each data point group contains 3 or more continuous data points), so as to select all data points that meet the definition of local maximum points (the point with the largest intermediate value in each data point group is a local maximum point), so that all local maximum points in the silicon rod circumferential scanning data can be quickly obtained, and each local maximum point has points with smaller values ​​on the left and right, so as to determine the minimum value points of the left interval and the right interval of each local maximum point.

[0015] In combination with a possible implementation manner of the first aspect embodiment, before the angle values ​​of the maximum points in the at least one maximum point group do not meet the first crystal line error condition, the method also includes: for each maximum point group in the at least one maximum point group, obtaining four angle values ​​corresponding to four local maximum points in the maximum point group, judging whether each adjacent difference among the four angle values ​​of the maximum point group is within a first set difference, and obtaining a first judgment result, wherein the adjacent difference is the difference between two adjacent angles among the four angle values ​​of the maximum point group; and judging whether each interval difference among the four angle values ​​of the maximum point group is within a second set difference, and obtaining a second judgment result, wherein the interval difference is the difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; and determining whether the angle values ​​of the maximum points in the maximum point group meet the first crystal line error condition based on the first judgment result and the second judgment result of the maximum point group.

[0016] In an embodiment of the present application, by obtaining the four angle values ​​corresponding to the four local maximum points in the maximum point group, it is determined whether each adjacent difference among the four angle values ​​of the maximum point group is within a first set difference to obtain a first judgment result, and it is determined whether each interval difference among the four angle values ​​of the maximum point group is within a second set difference to obtain a second judgment result. In this way, it is possible to quickly and accurately determine whether the angle value of the maximum point in the maximum point group meets the first crystal line error condition.

[0017] In combination with a possible implementation manner of the embodiment of the first aspect, the value range of the first set difference is 86°-94°, and the value range of the second set difference is 176°-184°.

[0018] In the embodiment of the present application, since the four crystal lines of the silicon rod are distributed at different positions of the silicon rod, in a relationship similar to 90°, 180°, 270°, and 360°, the crystal line error requirements are determined based on the above-mentioned set difference, so that it is possible to quickly and accurately determine whether the angle value of the maximum point in the maximum point group meets the first crystal line error condition.

[0019] In combination with a possible implementation method of the first aspect, a target maximum point group whose angle values ​​of the maximum points satisfy the second crystal line error condition is screened out from the at least one maximum point group, including: for each maximum point group in the at least one maximum point group, obtaining four angle values ​​corresponding to four local maximum points in the maximum point group, judging whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition, and obtaining a third judgment result; and determining whether the angle values ​​of the maximum points in the maximum point group satisfy the second crystal line error condition based on the third judgment result of the maximum point group.

[0020] In the embodiment of the present application, by judging whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition, it is possible to quickly determine whether the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition.

[0021] In combination with a possible implementation manner of the embodiment of the first aspect, determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition includes: determining whether the difference between each two adjacent angle values ​​of three of the four angle values ​​of the maximum point group is within a third set difference, and obtaining a first judgment sub-result of the maximum point group; determining whether there are two interval differences among the four angle values ​​of the maximum point group that are within a fourth set difference, and obtaining a second judgment sub-result of the maximum point group, wherein the interval difference is the difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; and determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition based on the first judgment sub-result and the second judgment sub-result of the maximum point group.

[0022] In an embodiment of the present application, by judging whether the difference between each two adjacent angle values ​​among three of the four angle values ​​of the maximum point group is within a third set difference, and judging whether there are two interval differences among the four angle values ​​of the maximum point group that are within a fourth set difference, it is possible to quickly determine whether the four angle values ​​of the maximum point group meet the crystal line difference condition.

[0023] In combination with a possible implementation manner of the embodiment of the first aspect, the target crystal line of the silicon rod is determined according to the adjusted angle value of each maximum point in the target maximum point group, including: if the difference between each two adjacent angle values ​​of the three angle values ​​in the target maximum point group is within the third set difference, the remaining angle values ​​in the target maximum point group are adjusted to obtain an adjusted remaining angle value, wherein the remaining angle value is an angle value other than the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition; the target crystal line is determined according to the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition and the adjusted remaining angle value.

[0024] In an embodiment of the present application, if the difference between each two adjacent angle values ​​in the three angle values ​​in the target maximum point group is within a third set difference, and when adjusting the angle, only the remaining angle values ​​can be adjusted, which can improve the adjustment efficiency.

[0025] In combination with a possible implementation manner of the embodiment of the first aspect, the target crystal line of the silicon rod is determined according to the adjustment angle value of each maximum point in the target maximum point group, including: if there are two interval differences among the four angle values ​​in the target maximum point group that are within the fourth set difference, each angle value in the target maximum point group is adjusted by an error averaging method to obtain the adjustment angle value of each maximum point in the target maximum point group; the target crystal line is determined according to the adjustment angle value of each maximum point in the target maximum point group.

[0026] In an embodiment of the present application, if there are two interval differences among the four angle values ​​in the target maximum point group that are within the fourth set difference, the error averaging method is used to adjust each angle value in the target maximum point group, so that an angle that meets the requirements can be quickly obtained, and then the required target crystal line can be quickly determined.

[0027] In combination with a possible implementation manner of the embodiment of the first aspect, a target maximum point group whose angle values ​​of the maximum points satisfy the second crystal line error condition is screened out from the at least one maximum point group, including: for each maximum point group in the at least one maximum point group, obtaining four angle values ​​corresponding to four local maximum points in the maximum point group, judging whether each adjacent difference among the four angle values ​​of the maximum point group is within a fifth set difference, and obtaining a fourth judgment result, wherein an adjacent difference is a difference between two adjacent angles among the four angle values ​​of the maximum point group; and judging whether each interval difference among the four angle values ​​of the maximum point group is within a sixth set difference, and obtaining a fifth judgment result, wherein an interval difference is a difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; and determining whether the angle values ​​of the maximum points in the maximum point group satisfy the second crystal line error condition according to the fourth judgment result and the fifth judgment result of the maximum point group.

[0028] In an embodiment of the present application, by judging whether each adjacent difference among the four angle values ​​of the maximum point group is within the fifth set difference, and judging whether each interval difference among the four angle values ​​of the maximum point group is within the sixth set difference, it is possible to quickly determine whether the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition.

[0029] In combination with a possible implementation manner of the embodiment of the first aspect, the value range of the fifth set difference is 80°-100°, and the value range of the sixth set difference is 170°-190°.

[0030] In the embodiment of the present application, the above-mentioned value range is used to screen the target maximum point group that meets the second crystal line error condition, which is equivalent to first enlarging the error interval to determine whether it can pass the minimum requirement when screening the target maximum point group. If it does not pass, it is a detection failure, thereby avoiding the situation where even if the angle value corresponding to the target maximum point group is adjusted later, it may not be possible to obtain an angle that meets the requirements.

[0031] In combination with a possible implementation manner of the embodiment of the first aspect, the target crystal line of the silicon rod is determined according to the adjustment angle value of each maximum point in the target maximum point group, including: if the angle values ​​of the four maximum points in the target maximum point group meet the second crystal line error condition, each angle value in the target maximum point group is adjusted by an error averaging method to obtain the adjustment angle value of each maximum point in the target maximum point group; the target crystal line is determined according to the adjustment angle value of each maximum point in the target maximum point group.

[0032] In an embodiment of the present application, when the angle values ​​of the four maximum points in the target maximum point group meet the second crystal line error condition, the error averaging method is used to adjust each angle value in the target maximum point group, so that the angle that meets the requirements can be quickly obtained, and then the required target crystal line can be quickly determined.

[0033] In a second aspect, an embodiment of the present application further provides a crystal line adjustment device, comprising: an acquisition module, a combination module, a screening module and an adjustment module; the acquisition module is used to determine the convexity of all local maximum points in the circumferential scanning data of the silicon rod based on the acquired circumferential scanning data of the silicon rod, wherein the circumferential scanning data of the silicon rod includes multiple data points collected along the outer peripheral contour of the silicon rod; the combination module is used to combine N local maximum points to obtain at least one maximum point group, wherein the N local maximum points are the local maximum points with the highest convexity among all the local maximum points, and N is an integer greater than or equal to 4; the screening module is used to screen out a target maximum point group whose angle values ​​of the maximum points meet the second crystal line error condition from the at least one maximum point group when the angle values ​​of the maximum points in the at least one maximum point group do not meet the first crystal line error condition; the adjustment module is used to determine the target crystal line of the silicon rod according to the adjusted angle value of each maximum point in the target maximum point group.

[0034] In the third aspect, the example of the present application also provides an electronic device, including: a memory and a processor, the processor being connected to the memory; the memory being used to store programs; the processor being used to call the programs stored in the memory to execute a method provided in the above-mentioned first aspect embodiment and / or in any possible manner in combination with the above-mentioned first aspect embodiment.

[0035] In a fourth aspect, the present application example also provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, it executes a method provided in any possible manner as described in the first aspect embodiment above and / or in combination with the first aspect embodiment above.

[0036] Other features and advantages of the present application will be described in the following description. The purpose and other advantages of the present application can be realized and obtained through the structures specifically pointed out in the written description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. The above and other purposes, features and advantages of the present application will be more clear as shown in the drawings.

[0038] Figure 1 A schematic flow chart of a crystal line adjustment method provided in an embodiment of the present application is shown.

[0039] Figure 2 A waveform diagram of circumferential scanning data of a silicon rod provided in an embodiment of the present application is shown.

[0040] Figure 3 A schematic diagram showing the principle of determining a left interval and a right interval of a local maximum point provided by an embodiment of the present application is shown.

[0041] Figure 4 A schematic diagram of the principle of determining a first convexity of a local maximum point in a left interval and a second convexity in a right interval provided by an embodiment of the present application is shown.

[0042] Figure 5 A schematic diagram showing the principle of determining the convexity of a local maximum point provided in an embodiment of the present application is shown.

[0043] Figure 6 A module schematic diagram of a crystal line adjustment device provided in an embodiment of the present application is shown.

[0044] Figure 7 A schematic structural diagram of an electronic device provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0045] The technical solutions in the embodiments of the present application will be described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The following embodiments can be used as examples to more clearly illustrate the technical solutions of the present application, and cannot be used to limit the scope of protection of the present application. It will be appreciated by those skilled in the art that, in the absence of conflict, the features in the following embodiments and embodiments can be combined with each other.

[0046] It should be noted that similar numbers and letters represent similar items in the following drawings, so once an item is defined in one drawing, it is not necessary to further define and explain it in the subsequent drawings. At the same time, in the description of this application, relational terms such as "first", "second", etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "include", "comprise" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements that are not clearly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements limited by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements.

[0047] Furthermore, the term "and / or" in this application is merely a term used to describe the association relationship between associated objects, indicating that three relationships may exist. For example, A and / or B may represent three situations: A exists alone, A and B exist at the same time, and B exists alone.

[0048] In the description of the embodiments of the present application, unless otherwise clearly specified or limited, the technical term "electrical connection" may refer to a direct electrical connection or an indirect electrical connection via an intermediate medium.

[0049] In view of the fact that the current manual crystal line adjustment cannot ensure the accuracy of the crystal line adjustment and the adjustment efficiency is low, the example of the present application provides a fully automatic crystal line adjustment method, which can quickly and accurately detect the angular position of the actual crystal line on the silicon rod, and when the actual crystal line cannot meet the crystal line error condition, the angular position of the actual crystal line can be automatically adjusted to meet the crystal line error condition, and the target crystal line of the silicon rod (a virtual crystal line whose angular position meets the crystal line error condition) is determined according to the adjusted angle value, which is convenient for subsequent silicon rod processing.

[0050] The crystal line adjustment method shown in this application is applicable to the scenario where the angle position of the actual crystal line on the silicon rod cannot meet the crystal line error condition and needs to be adjusted. Figure 1 The crystal line detection method provided in the example of this application is described.

[0051] S1: determining the convexity of all local maximum points in the circumferential scanning data of the silicon rod according to the acquired circumferential scanning data of the silicon rod.

[0052] The circumferential scanning data of the silicon rod includes a plurality of data points collected along the outer contour of the silicon rod. The circumferential scanning data of the silicon rod may be the circumferential scanning data of the silicon rod obtained by scanning the surface of the silicon rod with a probe. When scanning the surface of the silicon rod, the probe performs a 360° scan along the outer contour surface of the silicon rod. Accordingly, the circumferential scanning data of the silicon rod includes a plurality of data points collected along the outer contour of the silicon rod. For example, a 360° scan of a silicon rod can scan out approximately more than 400 data points, and each data point contains the convex value of the silicon rod at a specific angular position. The probe may be a probe used to scan silicon rods on an existing silicon rod processing all-in-one machine.

[0053] It is understandable that the silicon rod will rotate evenly during the scanning process. For example, every time the silicon rod rotates 0.8° (but not limited to this), the probe will scan the silicon rod once to obtain a data point. After rotating 0.8° again, the probe will scan the silicon rod again to obtain the next data point. By analogy, when the silicon rod rotates 360°, the probe can collect more than 400 data points.

[0054] In some embodiments, the acquired circumferential scanning data of the silicon rod may be actual scanning data acquired by scanning the circumference of the silicon rod.

[0055] In some other possible implementations, the silicon rod circumferential scanning data may be data obtained by interpolating the actual scanning data. In this implementation, the process of obtaining the silicon rod circumferential scanning data may be: obtaining the actual scanning data of scanning the silicon rod circumference; inserting part of the end description data and part of the beginning description data in the actual scanning data into the set position of the actual scanning data to obtain the inserted actual scanning data, and using the inserted actual scanning data as the silicon rod circumferential scanning data, wherein the set position is the beginning position or the end position of the actual scanning data.

[0056] For example, in one possible implementation, when interpolating the actual scan data, the tail scan data of the first specified length (configurable) is inserted before the start scan data point (i.e., the beginning position) in the actual scan data, and the start scan data of the second specified length (configurable) is inserted after the tail scan data point (i.e., the end position) in the actual scan data. By inserting the start scan data after the tail scan data point and inserting the tail scan data before the start scan data point, it is convenient to determine the subsequent peaks (maximum points) and troughs (minimum points), avoid the peaks at the beginning or end stage, and process the edge data, which is conducive to improving the accuracy of crystal line detection.

[0057] The first designated length and the second designated length may be the same or different. For example, assuming that the horizontal axis (X axis) represents the number of acquisition times of the data point, and the vertical axis (Y axis) represents the convex value of the data point (the value obtained by the probe scanning each point on the silicon rod), assuming that the actual scan data has 400 data points (corresponding to the horizontal axis 0 to 399), the first 20 data points (corresponding to the horizontal axis 0 to 19) at the beginning of the scan can be inserted after the 400th data point, and the last 20 data points (corresponding to the horizontal axis 380 to 399) at the end of the scan can be inserted before the first data point. After interpolation processing, the actual scan data becomes 440 data points (corresponding to the horizontal axis -20 to 419).

[0058] After obtaining the silicon rod circumferential scanning data, the convexity of all local maximum points in the silicon rod circumferential scanning data can be determined based on the silicon rod circumferential scanning data (which is a relative value calculated based on the convexity values ​​of different points on the silicon rod). In this process, it is necessary to first determine all local maximum points in the silicon rod circumferential scanning data, and then determine the convexity of all local maximum points.

[0059] The process of obtaining all local maximum points in the silicon rod circumferential scanning data can be: obtaining all data point groups in the silicon rod circumferential scanning data, each data point group contains M consecutive data points, where M is an integer not less than 3; traversing each data point group, screening out the point with the largest intermediate value in the data point group, where the point with the largest intermediate value in each data point group is a local maximum point; according to the point with the largest intermediate value in each data point group, obtaining all local maximum points in the silicon rod circumferential scanning data.

[0060] For better understanding, take M=3 (the value of M is not limited to 3) as an example, assuming that it contains 440 (corresponding to horizontal coordinates -20 to 419) data points, then there can be 438 (440-3+1) data point groups, for example, the first data point group (corresponding to horizontal coordinates -20 to -18), the second data point group (corresponding to horizontal coordinates -19 to -17), ..., the 437th data point group (corresponding to horizontal coordinates 416 to 418), and the 438th data point group (corresponding to horizontal coordinates 417 to 419). Traverse the 438 data point groups and select the point with the largest middle value in the data point group. Assuming that the middle value in the first data point group is greater than the values ​​on both sides of the data group, the middle value in the first data point group is the local maximum point. Assuming that the middle value in the second data point group is not greater than the values ​​on both sides of the data group, the middle value in the second data point group is not a local maximum point. In this way, all local maximum points in the circumferential scanning data of the silicon rod can be obtained.

[0061] After all the local maximum points in the silicon rod circumferential scanning data are acquired, the convexity of all the local maximum points in the silicon rod circumferential scanning data can be determined based on the silicon rod circumferential scanning data.

[0062] In one implementation manner, the convexity of all local maximum points in the circumferential scanning data of the silicon rod can be determined based on the circumferential scanning data of the silicon rod: first, based on the circumferential scanning data of the silicon rod, determine the left interval and the right interval of each local maximum point; based on the circumferential scanning data of the silicon rod, determine the first convexity of each local maximum point in the left interval and the second convexity in the right interval; based on the first convexity and the second convexity of each local maximum point, determine the convexity of each local maximum point.

[0063] The process of determining the left interval and the right interval of each local maximum point based on the circumferential scanning data of the silicon rod may be: for each local maximum point, according to the horizontal extension line of the local maximum point and the scanning curve corresponding to the circumferential scanning data of the silicon rod, the left interval and the right interval of the local maximum point are obtained. For example, for each local maximum point, the horizontal extension line of the local maximum point is obtained, and based on the scanning curve corresponding to the circumferential scanning data of the silicon rod, it is determined whether there is a data point (target data point) with a larger value than the local maximum point on the left (or right) side of the local maximum point. If so, the interval from the local maximum point to the target data point is the left interval (or right interval); if not, the interval from the local maximum point to the left boundary (or right boundary) is the left interval (or right interval).

[0064] The process of determining the first convexity of each local maximum point in the left interval and the second convexity in the right interval based on the silicon rod circumferential scanning data may be: for each local maximum point, based on the silicon rod circumferential scanning data, obtaining the data point with the smallest convexity in the left interval and the right interval of the local maximum point, and taking the difference (absolute difference) between the convexity of the local maximum point and the convexity of the data point with the smallest convexity in its left interval (i.e., the left area minimum point) as the first convexity of the left interval of the local maximum point, and taking the difference (absolute difference) between the convexity of the local maximum point and the convexity of the data point with the smallest convexity in its right interval (i.e., the right area minimum point) as the second convexity of the right interval of the local maximum point. That is, the first convexity of each local maximum point in the left interval is: the absolute difference between the convexity of the local maximum point and the convexity of the left area minimum point; the second convexity of each local maximum point in the right interval is: the absolute difference between the convexity of the local maximum point and the convexity of the right area minimum point.

[0065] Based on the first convexity and the second convexity of each local maximum point, the process of determining the convexity of each local maximum point can be: for each local maximum point, the convexity with a relatively smaller value between the first convexity and the second convexity of the local maximum point is used as the convexity of the local maximum point.

[0066] In one possible implementation, the sum or difference between the first and second convexities with relatively small values ​​and a set value may be used as the convexity of the local maximum point, or the product of the first and second convexities with relatively small values ​​and a set weight may be used as the convexity of the local maximum point.

[0067] In order to better understand the above process of determining the convexity of each local maximum point, Figure 2-Figure 4 For explanation. Figure 2 As shown, Figure 2 It is a waveform diagram of the circumferential scanning data of the silicon rod. The horizontal axis corresponds to the number of acquisition times of the data point (each time corresponds to an angle), the vertical axis represents the convexity value of the data point, and the vertical line on the peak point (local maximum point) represents the convexity of the peak point finally calculated.

[0068] Here we select the second local maximum point on the left ( Figure 3 Taking the data point indicated by the arrow in the middle as an example, since there is no data point with a larger convex value than the local maximum point on the left side of the local maximum point, the left interval of the local maximum point is the interval from the local maximum point to the left boundary. Since there is a data point with a larger convex value than the local maximum point on the right side of the local maximum point, the right interval is the interval from the local maximum point to the larger data point. The schematic diagram is shown as follows Figure 3 shown.

[0069] Select the minimum convexity value in the left interval and the right interval respectively, obtain the absolute difference between the convexity value of the local maximum point and the convexity value of the minimum point in the left area, and obtain the first convexity. Obtain the absolute difference between the convexity value of the local maximum point and the convexity value of the minimum point in the right area to obtain the second convexity. The convexity with a relatively small value between the first convexity and the second convexity of the local maximum point is used as the convexity of the local maximum point. The principle diagram is as follows Figure 4 shown.

[0070] The calculation process of the convexity of each local maximum is similar to Figure 2 to Figure 4 The calculation process shown is the same.

[0071] In another embodiment, the method for determining the convexity of all local maximum points in the circumferential scanning data of the silicon rod according to the obtained circumferential scanning data of the silicon rod can be: based on the circumferential scanning data of the silicon rod, determine the left interval and the right interval of each local maximum point; based on the circumferential scanning data of the silicon rod, obtain the left area minimum value point of each local maximum point in the left interval and the right area minimum value point in the right interval; according to the left area minimum value point and the right area minimum value point of each local maximum point, obtain the convexity of each local maximum point. Among them, the process of obtaining the convexity of each local maximum point according to the left area minimum value point and the right area minimum value point of each local maximum point can be: for each local maximum point, obtain a larger value point from the left area minimum value point and the right area minimum value point of the local maximum point as a target comparison value point, obtain the absolute height difference between the local maximum point and the target comparison value point, and obtain the convexity of the local maximum point according to the absolute height difference.

[0072] The difference between this implementation and the above-mentioned determination of the convexity of each local maximum point based on the first convexity and the second convexity of each local maximum point is that: after obtaining the left area minimum point and the right area minimum point of each local maximum point, this implementation no longer calculates the first convexity and the second convexity of each local maximum point, but directly obtains the larger value point from the left area minimum point and the right area minimum point of the local maximum point as the target comparison value point, and then obtains the absolute height difference between the local maximum point and the target comparison value point, thereby obtaining the convexity of the local maximum point.

[0073] In one implementation, the absolute height difference may be directly used as the convexity of the local maximum point, or the sum or difference of the absolute height difference and a set value may be used as the convexity of the local maximum point, or the product of the absolute height difference and a set weight may be used as the convexity of the local maximum point, etc.

[0074] For a better understanding, the following Figure 5To illustrate, select the minimum convexity value in the left interval and the right interval respectively, select the larger of the two minimum convexity values ​​(here the lowest point in the right interval is selected) as the target comparison value point, and the altitude difference from the local maximum point to the larger convexity value (i.e. the target comparison value point) is the convexity of the local maximum point. The principle diagram is as follows Figure 5 shown.

[0075] S2: Combine N local maximum points to obtain at least one maximum point group.

[0076] Among them, the N local maximum points are the local maximum points with the highest convexity among all the local maximum points. After obtaining the convexity of all the local maximum points, the first N local maximum points with the highest convexity are selected. Since the silicon rod contains 4 crystal lines (which is common knowledge in the industry), N is an integer greater than or equal to 4.

[0077] In an optional implementation, the value of N is [4,7]. Taking N=7 as an example, it is assumed that the first 7 local maximum points of convexity are a1, a2, a3, a4, a5, a6, and a7. When N=7, all angle values ​​that meet the requirements can be included as much as possible, so that the required target angle value can be determined more quickly.

[0078] After selecting the first N local maximum points with the highest convexity, the N local maximum points are combined to obtain at least one maximum point group, and each maximum point group includes 4 local maximum points.

[0079] Assuming that the first 7 local maximum points with the highest convexity are a1, a2, a3, a4, a5, a6, and a7, then by selecting 4 local maximum points from them for combination, 35 local maximum point groups can be obtained.

[0080] As a possible implementation, after selecting the first N local maximum points with the highest convexity, the angle values ​​corresponding to the N local maximum points may be combined to obtain multiple angle groups, each of which includes 4 angle values.

[0081] S3: When the angle values ​​of the maximum points in the at least one maximum point group do not satisfy the first crystal line error condition, select a target maximum point group protrusion whose angle values ​​of the maximum points satisfy the second crystal line error condition from the at least one maximum point group.

[0082] After obtaining at least one maximum point group, if a maximum point group that satisfies the first crystal line error condition cannot be screened out from the at least one maximum point group, a target maximum point group whose angle values ​​of the maximum points satisfy the second crystal line error condition is screened out from the at least one maximum point group.

[0083] Among them, before the angle values ​​of the maximum points in at least one maximum point group do not meet the first crystal line error condition, the crystal line adjustment method also includes: for each maximum point group in at least one maximum point group, obtaining four angle values ​​corresponding to four local maximum points in the maximum point group (need to be sorted according to the size of the angle values, wherein, when sorting, the angle values ​​can be sorted from small to large (or from large to small)), judging whether each adjacent difference among the four angle values ​​of the maximum point group is within a first set difference, and obtaining a first judgment result, wherein the adjacent difference is the difference between two adjacent angles among the four angle values ​​of the maximum point group; and judging whether each interval difference among the four angle values ​​of the maximum point group is within a second set difference, and obtaining a second judgment result, wherein the interval difference is the difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; according to the first judgment result and the second judgment result of the maximum point group, determining whether the angle value of the maximum point in the maximum point group meets the first crystal line error condition.

[0084] In this implementation manner, for each maximum point group, four angle values ​​corresponding to the four local maximum points in the maximum point group are obtained, it is determined whether the difference between any two adjacent angles of the four angle values ​​of the maximum point group is within a first set difference, a first judgment result is obtained, and it is determined whether the difference between any two angle values ​​separated by one angle value of the four angle values ​​of the maximum point group is within a second set difference, a second judgment result is obtained, and based on the first judgment result and the second judgment result of the maximum point group, it is determined whether the angle value of the maximum point in the maximum point group meets the first crystal line error condition.

[0085] If the first judgment result characterizes that each adjacent difference of the four angle values ​​of the maximum point group is within the first set difference, and the second judgment result characterizes that the difference between any two angle values ​​of the four angle values ​​of the maximum point group with an angle value interval is within the second set difference, then the angle value of the maximum point in the group of maximum point groups meets the first crystal line error condition. Conversely, if the first judgment result characterizes that each adjacent difference of the four angle values ​​of the maximum point group is not within the first set difference, and / or the second judgment result characterizes that the difference between any two angle values ​​of the four angle values ​​of the maximum point group with an angle value interval is not within the second set difference, then the angle value of the maximum point in the group of maximum point groups does not meet the first crystal line error condition.

[0086] In an optional implementation, the first set difference value ranges from 86° to 94°, and the second set difference value ranges from 176° to 184°. Taking the maximum point group as (a4, a5, a6, a7) as an example, assuming that the angle value corresponding to a4> the angle value corresponding to a5> the angle value corresponding to a6> the angle value corresponding to a7, if the angle value difference between a4 and a5, a5 and a6, a6 and a7 satisfies 86° to 94°, and the angle value difference between a4 and a6, a5 and a7 satisfies 176° to 184°, then it is considered that the angle value of this group of maximum point values ​​meets the first crystal line error condition. In another embodiment, the first set difference value range can also be 84° to 96°, and the second set difference value range can also be 174° to 186°. Of course, the value ranges of the first set difference and the second set difference can be 80°-100°, 170°-190°, etc., respectively, and can be set according to actual needs, and the embodiments of the present application are not specifically limited.

[0087] In an optional implementation, the implementation process of S3 may be: for each maximum point group in at least one maximum point group, obtain four angle values ​​corresponding to four local maximum points in the maximum point group (need to be sorted according to the size of the angle values), judge whether the four angle values ​​of the maximum point group meet the crystal line difference condition, and obtain a third judgment result; based on the third judgment result of the maximum point group, determine whether the angle value of the maximum point in the maximum point group meets the second crystal line error condition.

[0088] Among them, if the third judgment result indicates that the four angle values ​​of the maximum point group meet the crystal line difference condition, then it is determined that the angle value of the maximum point in the maximum point group meets the second crystal line error condition, and conversely, it is determined that the angle value of the maximum point in the maximum point group does not meet the second crystal line error condition. If the angle value of the maximum point in the maximum point group meets the second crystal line error condition, then the maximum point group is the target maximum point group.

[0089] In an optional implementation, the process of determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition can be: determining whether the difference between each two adjacent angle values ​​of three of the four angle values ​​of the maximum point group is within a third set difference, and obtaining a first judgment sub-result of the maximum point group; determining whether there are two interval differences among the four angle values ​​of the maximum point group that are within a fourth set difference, and obtaining a second judgment sub-result of the maximum point group, wherein the interval difference is the difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; and determining whether the four angle values ​​of the maximum point group satisfy the crystal line difference condition based on the first judgment sub-result and the second judgment sub-result of the maximum point group.

[0090] If the first judgment sub-result indicates that the difference between each two adjacent angle values ​​in three of the four angle values ​​of the maximum point group is within the third set difference, or the second judgment sub-result indicates that there are two interval differences in the four angle values ​​of the maximum point group that are within the fourth set difference, it is determined that the four angle values ​​of the maximum point group meet the crystal line difference condition. That is, the crystal line difference condition is that the difference between each two adjacent angle values ​​in three of the four angle values ​​of the maximum point group is within the third set difference, or there are two interval differences in the four angle values ​​of the maximum point group that are within the fourth set difference.

[0091] When determining whether the four angle values ​​of the maximum point group meet the crystal line difference condition based on the second judgment sub-result, for example, the four angle values ​​are 0°, 80°, 180°, and 260°, and the errors of 0°-180° and 80°-260° in this group are extremely low, but 0°-80° cannot pass the 90°±4° inspection. At this time, since the second judgment sub-result indicates that there are two interval differences among the four angle values ​​of the maximum point group that are within the fourth set difference, it is determined that the four angle values ​​of the maximum point group meet the crystal line difference condition.

[0092] The third judgment result may include the first judgment sub-result and the second judgment sub-result. The third set difference value may be the same as the first set difference value, and the fourth set difference value may be the same as the second set difference value.

[0093] If there are three adjacent angle values ​​among the four angle values ​​of the maximum point group that meet the crystal line error requirements, that is, determine whether the difference between any two adjacent angle values ​​among these three angle values ​​is in the interval [86°, 94°]. If so, it is considered that the four angle values ​​of the maximum point group meet the crystal line difference conditions.

[0094] In order to better understand whether there are three angle values ​​in the four angle values ​​of the maximum point group that meet the crystal line error requirements, the following example is used to illustrate. If the angle values ​​corresponding to the maximum point group are 0°, 90°, 180°, and 250°, respectively, since the difference between two adjacent angle values, such as 180° and 250°, is not in the interval [86°, 94°], and the difference between two angle values ​​separated by one angle value, such as 90° and 250°, is not in the interval [176°, 184°], this group of angle values ​​does not meet the crystal line error requirements. However, there are three angle values ​​(0°, 90°, 180°) in this group of angle values ​​that meet the crystal line difference conditions.

[0095] In another embodiment, the process of selecting a target maximum point group whose angle values ​​of the maximum points satisfy the second crystal line error condition from at least one maximum point group may also be: for each maximum point group in at least one maximum point group, obtaining four angle values ​​corresponding to four local maximum points in the maximum point group, judging whether each adjacent difference among the four angle values ​​of the maximum point group is within a fifth set difference, and obtaining a fourth judgment result, wherein an adjacent difference is a difference between two adjacent angles among the four angle values ​​of the maximum point group; and judging whether each interval difference among the four angle values ​​of the maximum point group is within a sixth set difference, and obtaining a fifth judgment result, wherein an interval difference is a difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; and determining whether the angle values ​​of the maximum points in the maximum point group satisfy the second crystal line error condition based on the fourth judgment result and the fifth judgment result of the maximum point group.

[0096] Among them, if the fourth judgment result represents that each adjacent difference among the four angle values ​​of the maximum point group is within the fifth set difference, and if the fifth judgment result represents that each interval difference among the four angle values ​​of the maximum point group is within the sixth set difference, then it is determined that the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition, then the maximum point group is the target maximum point group.

[0097] Among them, in this implementation, the process of determining whether the angle value of the maximum point in the maximum point group satisfies the second crystal line error condition is similar to the above-mentioned process of determining whether the angle value of the maximum point in the maximum point group satisfies the first crystal line error condition. The difference is that the first set difference is replaced by the fifth set difference, and the second set difference is replaced by the sixth set difference.

[0098] Among them, the fifth set difference range is larger than the first set difference range, and the sixth set difference range is larger than the second set difference range. This implementation is equivalent to first enlarging the error interval to determine whether it can pass the minimum requirement. If it does not pass, it is a detection failure.

[0099] Among them, optionally, the value range of the fifth setting difference is 80°-100°, and the value range of the sixth setting difference is 170°-190°. Taking the maximum point group as (a4, a5, a6, a7) as an example, assuming that the angle value corresponding to a4>the angle value corresponding to a5>the angle value corresponding to a6>the angle value corresponding to a7, if the angle value difference between a4 and a5, a5 and a6, a6 and a7 satisfies 80°-100°, and the angle value difference between a4 and a6, a5 and a7 satisfies 170°-190°, then it is considered that the angle value of this group of maximum point values ​​meets the second crystal line error condition.

[0100] In an optional implementation, the first crystal line error condition and the second crystal line error condition include: the difference between any two adjacent angle values ​​of the four angle values ​​sorted by angle value satisfies 90°±A°, and the difference between two angle values ​​separated by one angle value satisfies 180°±B°, and A and B are integers. Among them, A in the first crystal line error condition is less than A in the second crystal line error condition, and B in the first crystal line error condition is less than B in the second crystal line error condition. For example, for the first crystal line error condition, the maximum value of A can be 6, and the maximum value of B can be 6. For the second crystal line error condition, the maximum value of A can be 10, and the maximum value of B can be 10. At this time, as long as the difference between any two adjacent angle values ​​is in the interval [80°, 100°], and the difference between two angle values ​​separated by one angle value is in the interval [170°, 190°], it is considered that the second crystal line error condition is satisfied.

[0101] S4: determining a target crystal line of the silicon rod according to the adjustment angle value of each maximum point in the target maximum point group.

[0102] The above-mentioned silicon rod can be a single crystal silicon rod or a polycrystalline silicon rod. Because the specific positions of M (which can be 4) crystal lines on the silicon rod need to be known before the wire cutting integrated machine processes the silicon rod, crystal line detection is required. Normally, the 4 crystal lines on the silicon rod are distributed at different positions of the silicon rod, in a relationship similar to 90°, 180°, 270°, and 360°. However, if the distribution relationship of the crystal lines is not similar to 90°, 180°, 270°, and 360°, even after the angular positions of the 4 crystal lines are detected, the silicon rod cannot be processed according to the actual crystal line position. The angular position of the actual crystal line needs to be adjusted to meet the crystal line error requirements, and the virtual crystal line is determined based on the adjusted angular position, and the silicon rod is processed based on the virtual crystal line.

[0103] The target crystal line may not be a physical crystal line on the silicon rod, but a virtual crystal line.

[0104] In an optional implementation, the process of determining the target crystal line of the silicon rod according to the adjusted angle value of each maximum point in the target maximum point group can be: if the difference between each two adjacent angle values ​​of the three angle values ​​in the target maximum point group is within the third set difference, the remaining angle values ​​in the target maximum point group are adjusted to obtain the adjusted remaining angle value, wherein the remaining angle value is an angle value other than the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition; the target crystal line is determined according to the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition and the adjusted remaining angle value. Of course, in a possible implementation, if the difference between each two adjacent angle values ​​of the three angle values ​​in the target maximum point group is within the third set difference, the remaining angle values ​​may not be adjusted, and the four angle values ​​in the target maximum point group may be directly used as the target crystal line position.

[0105] For better understanding, the following example is used to illustrate that the angles corresponding to the four maximum values ​​in the target maximum point group are 0°, 90°, 180°, and 250° (normally 266°-274°). The fourth angle has a large deviation, but the adjacent angle differences of the first three angles are all 90±4°, which satisfies the second crystal line error condition. In one embodiment, 250° can be adjusted to any value between 266° and 274°. In another embodiment, the angle values ​​of the group (0°, 90°, 180°, 250°) do not need to be adjusted, and the position of the target crystal line can be directly determined based on the angle values ​​of the group (0°, 90°, 180°, 250°).

[0106] When adjusting the angle value corresponding to the target local maximum point group, the adjustment can be made based on the error value (such as A) in the first crystal line error condition, such as adding or subtracting the error value based on the current angle value. In addition, when adjusting, the adjustment will be made based on the relationship between the angle values ​​corresponding to the target local maximum point group, and different relationships will result in different adjustment methods.

[0107] In an optional implementation manner, the process of determining the target crystal line of the silicon rod according to the adjusted angle value of each maximum point in the target maximum point group can also be: if there are two interval differences among the four angle values ​​in the target maximum point group that are within the fourth set difference, then each angle value in the target maximum point group is adjusted by an error averaging method to obtain the adjusted angle value of each maximum point in the target maximum point group; and the target crystal line is determined according to the adjusted angle value of each maximum point in the target maximum point group.

[0108] For example, if there are two interval differences (i.e., first angle value pairs) in the four angle values ​​sorted by the angle value size, which are within the fourth set difference. When adjusting, only two angle values ​​in any first angle value pair of the two pairs of first angle value pairs need to be adjusted. Assume that the angle values ​​corresponding to the target maximum point group are 0°, 80°, 180°, and 260°, respectively, wherein 0° and 180°, 80° and 260°, these two pairs of first angle value pairs are within the fourth set difference. Therefore, when adjusting, only 0° and 180° can be adjusted, such as reducing 5° each, and the adjusted angle values ​​are -5° (355°), 80°, 175°, and 260°, so that the difference between the adjacent two angle values ​​and the difference between the two angle values ​​separated by one angle value meet the crystal line error requirements. Of course, only 80° and 260° can be adjusted, such as increasing 5° each, and the adjusted angle values ​​are 0°, 85°, 180°, and 265°.

[0109] In an optional implementation manner, the process of determining the target crystal line of the silicon rod according to the adjusted angle value of each maximum point in the target maximum point group can also be: if the angle values ​​of the four maximum points in the target maximum point group meet the second crystal line error condition, each angle value in the target maximum point group is adjusted by an error averaging method to obtain the adjusted angle value of each maximum point in the target maximum point group; and the target crystal line is determined according to the adjusted angle value of each maximum point in the target maximum point group.

[0110] For example, if the angle values ​​corresponding to the target maximum point group are 0°, 90°, 190°, and 280°, respectively, the two pairs of second angle values ​​0° and 90°, and 190° and 280° (the two angle values ​​in each pair of second angle values ​​are adjacent) meet the first crystal line error condition, and the two pairs of second angle values ​​90° and 190°, and 0° and 280° do not meet the first crystal line error condition. Therefore, during adjustment, only the two angle values ​​in the second angle value pairs that do not meet the first crystal line difference condition can be adjusted. For example, 5° from 190° is divided into 90°, and 5° from 280° is divided into 0°. The adjusted 4 angle values ​​become 5°, 95°, 185°, and 275°. In this way, the difference between two adjacent angle values ​​and the difference between two angle values ​​separated by one angle value all meet the first crystal line difference condition.

[0111] The embodiment of the present application also provides a crystal line adjustment device 100, such as Figure 6 As shown, the crystal line adjustment device 100 includes: an acquisition module 110 , a combination module 120 , a screening module 130 and an adjustment module 140 .

[0112] The acquisition module 110 is used to determine the convexity of all local maximum points in the silicon rod circumferential scanning data according to the acquired silicon rod circumferential scanning data, wherein the silicon rod circumferential scanning data includes multiple data points collected along the outer peripheral contour of the silicon rod.

[0113] The combination module 120 is used to combine N local maximum points to obtain at least one maximum point group, wherein the N local maximum points are the local maximum points with the highest convexity among all the local maximum points, and N is an integer greater than or equal to 4.

[0114] The screening module 130 is used to screen out a target maximum point group whose angle values ​​of the maximum points meet the second crystal line error condition from the at least one maximum point group when the angle values ​​of the maximum points in the at least one maximum point group do not meet the first crystal line error condition.

[0115] The adjustment module 140 is used to determine the target crystal line of the silicon rod according to the adjustment angle value of each maximum point in the target maximum point group. Optionally, the acquisition module 110 is used to determine the left interval and the right interval of each local maximum point based on the circumferential scanning data of the silicon rod; based on the circumferential scanning data of the silicon rod, obtain the left area minimum point of each local maximum point in the left interval and the right area minimum point in the right interval; according to the left area minimum point and the right area minimum point of each local maximum point, obtain the convexity of each local maximum point.

[0116] Optionally, the acquisition module 110 is used to acquire, for each local maximum point, a left interval and a right interval of the local maximum point according to a horizontal extension line of the local maximum point and a scanning curve corresponding to the circumferential scanning data of the silicon rod.

[0117] Optionally, the acquisition module 110 is used to obtain a larger value point from the left area minimum point and the right area minimum point of the local maximum point as a target comparison value point for each local maximum point, obtain the absolute height difference between the local maximum point and the target comparison value point, and obtain the convexity of the local maximum point based on the absolute height difference.

[0118] Optionally, the acquisition module 110, before determining the convexity of all local maximum points in the silicon rod circumferential scanning data based on the acquired silicon rod circumferential scanning data, is also used to obtain all data point groups in the silicon rod circumferential scanning data, each data point group contains M consecutive data points, where M is an integer not less than 3; traverse each data point group to screen out the point with the largest intermediate value in each data point group, where the point with the largest intermediate value in each data point group is one of the local maximum points; based on the point with the largest intermediate value in each data point group, all local maximum points in the silicon rod circumferential scanning data are acquired.

[0119] Optionally, the screening module 130 is also used to obtain, for each maximum point group in the at least one maximum point group, four angle values ​​corresponding to four local maximum points in the maximum point group, and to determine whether each adjacent difference among the four angle values ​​of the maximum point group is within a first set difference, to obtain a first judgment result, wherein an adjacent difference is a difference between two adjacent angles among the four angle values ​​of the maximum point group; and to determine whether each interval difference among the four angle values ​​of the maximum point group is within a second set difference, to obtain a second judgment result, wherein an interval difference is a difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; and to determine whether the angle value of the maximum point in the maximum point group meets the first crystal line error condition based on the first judgment result and the second judgment result of the maximum point group.

[0120] Optionally, the screening module 130 is used to obtain, for each maximum point group in the at least one maximum point group, four angle values ​​corresponding to four local maximum points in the maximum point group, determine whether the four angle values ​​of the maximum point group meet the crystal line difference condition, and obtain a third judgment result; based on the third judgment result of the maximum point group, determine whether the angle value of the maximum point in the maximum point group meets the second crystal line error condition.

[0121] Optionally, the screening module 130 is used to determine whether the difference between each two adjacent angle values ​​of three of the four angle values ​​of the maximum point group is within a third set difference, and obtain a first judgment sub-result of the maximum point group; determine whether there are two interval differences among the four angle values ​​of the maximum point group that are within a fourth set difference, and obtain a second judgment sub-result of the maximum point group, wherein the interval difference is the difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; and determine whether the four angle values ​​of the maximum point group meet the crystal line difference condition based on the first judgment sub-result and the second judgment sub-result of the maximum point group.

[0122] Optionally, the screening module 130 is used to obtain, for each maximum point group in the at least one maximum point group, four angle values ​​corresponding to four local maximum points in the maximum point group, and determine whether each adjacent difference among the four angle values ​​of the maximum point group is within a fifth set difference, to obtain a fourth judgment result, wherein an adjacent difference is a difference between two adjacent angles among the four angle values ​​of the maximum point group; and determine whether each interval difference among the four angle values ​​of the maximum point group is within a sixth set difference, to obtain a fifth judgment result, wherein an interval difference is a difference between two angle values ​​of the four angle values ​​of the maximum point group that are separated by one angle value; and determine whether the angle value of the maximum point in the maximum point group meets the second crystal line error condition based on the fourth judgment result and the fifth judgment result of the maximum point group.

[0123] Optionally, the adjustment module 140 is used to adjust the remaining angle values ​​in the target maximum point group if the difference between every two adjacent angle values ​​among the three angle values ​​in the target maximum point group is within the third set difference, so as to obtain an adjusted remaining angle value, wherein the remaining angle value is an angle value in the target maximum point group other than the three angle values ​​that satisfy the crystal line difference condition; and determine the target crystal line based on the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition and the adjusted remaining angle value.

[0124] Optionally, the adjustment module 140 is used to adjust each angle value in the target maximum point group by using an error averaging method if there are two interval differences among the four angle values ​​in the target maximum point group that are within the fourth set difference, so as to obtain the adjusted angle value of each maximum point in the target maximum point group; and determine the target crystal line according to the adjusted angle value of each maximum point in the target maximum point group.

[0125] The crystal line adjustment device 100 provided in the embodiment of the present application has the same implementation principle and technical effects as those of the aforementioned method embodiment. For the sake of brief description, for matters not mentioned in the device embodiment, reference may be made to the corresponding contents in the aforementioned method embodiment.

[0126] like Figure 7 As shown, Figure 7 The electronic device 200 provided in the embodiment of the present application is shown in the structural block diagram. The electronic device 200 comprises: a transceiver 210, a memory 220, a communication bus 230 and a processor 2240.

[0127] The transceiver 210, the memory 220, and the processor 220 are electrically connected to each other directly or indirectly to achieve data transmission or interaction. For example, these components can be electrically connected to each other via one or more communication buses 230 or signal lines. The transceiver 210 is used to send and receive data. The memory 220 is used to store computer programs, such as storing Figure 6 The software function module shown in the figure is the crystal line adjustment device 100. The crystal line adjustment device 100 includes at least one software function module that can be stored in the memory 220 in the form of software or firmware or solidified in the operating system (OS) of the electronic device 200. The processor 2240 is used to execute the executable module stored in the memory 220, such as the software function module or computer program included in the crystal line adjustment device 100. For example, the processor 2240 is used to execute the above-mentioned crystal line detection method.

[0128] Among them, the memory 220 can be, but is not limited to, random access memory (Random Access Memory, RAM), read only memory (Read Only Memory, ROM), programmable read-only memory (Programmable Read-Only Memory, PROM), erasable programmable read-only memory (Erasable Programmable Read-Only Memory, EPROM), electrically erasable read-only memory (Electric Erasable Programmable Read-Only Memory, EEPROM), etc.

[0129] The processor 2M0 may be an integrated circuit chip with signal processing capabilities. The above-mentioned processor may be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), a microprocessor, etc.; it may also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The various methods, steps and logic block diagrams disclosed in the embodiments of the present application may be implemented or executed. Alternatively, the processor 2M0 may also be any conventional processor, etc.

[0130] The electronic devices 200 mentioned above include but are not limited to mobile phones, tablets, computers, servers, and silicon rod processing all-in-one machines.

[0131] The embodiment of the present application further provides a non-volatile computer-readable storage medium (hereinafter referred to as storage medium), on which a computer program is stored. When the computer program is run by a computer such as the above-mentioned electronic device 200, the crystal line adjustment method shown above is executed.

[0132] It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0133] In several embodiments provided in the present application, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely schematic. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architecture, functions and operations of the devices, methods and computer program products according to multiple embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of a code, and the module, a program segment or a part of a code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.

[0134] In addition, the functional modules in the various embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.

[0135] If the functions are implemented in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a computer-readable storage medium, including several instructions for enabling a computer device (which can be a personal computer, a laptop, a server, or an electronic device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present application. The aforementioned computer-readable storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0136] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A crystal line adjustment method, characterized in that: include: Determine the convexity of all local maximum points in the circumferential scanning data of the silicon rod according to the acquired circumferential scanning data of the silicon rod, wherein the circumferential scanning data of the silicon rod includes a plurality of data points collected along the outer peripheral contour of the silicon rod; Combining N local maximum points to obtain at least one maximum point group, wherein the N local maximum points are local maximum points ranked first in terms of convexity among all the local maximum points, and N is an integer greater than or equal to 4; When the angle values ​​of the maximum value points in the at least one maximum value point group do not satisfy the first crystal line error condition, selecting a target maximum value point group whose angle values ​​of the maximum value points satisfy the second crystal line error condition from the at least one maximum value point group; The target crystal line of the silicon rod is determined according to the adjustment angle value of each maximum point in the target maximum point group.

2. The crystal line detection method according to claim 1, characterized in that: According to the acquired silicon rod circumferential scanning data, the convexity of all local maximum points in the silicon rod circumferential scanning data is determined, including: Based on the silicon rod circumferential scanning data, determining a left interval and a right interval of each local maximum point; Based on the silicon rod circumferential scanning data, obtaining a left zone minimum point in the left interval and a right zone minimum point in the right interval of each local maximum point; The convexity of each local maximum point is obtained according to the minimum point in the left area and the minimum point in the right area of ​​each local maximum point.

3. The crystal line detection method according to claim 2, characterized in that: Based on the silicon rod circumferential scanning data, the left interval and the right interval of each local maximum point are determined, including: For each local maximum point, a left interval and a right interval of the local maximum point are obtained according to a horizontal extension line of the local maximum point and a scanning curve corresponding to the circumferential scanning data of the silicon rod.

4. The crystal line detection method according to claim 2, characterized in that: According to the minimum point in the left area and the minimum point in the right area of ​​each local maximum point, the convexity of each local maximum point is obtained, including: For each local maximum point, obtain the larger value point from the minimum value point in the left area and the minimum value point in the right area of ​​the local maximum point as the target comparison value point, obtain the absolute height difference between the local maximum point and the target comparison value point, and obtain the convexity of the local maximum point based on the absolute height difference.

5. The crystal line detection method according to claim 1, characterized in that: Before determining the convexity of all local maximum points in the silicon rod circumferential scanning data according to the acquired silicon rod circumferential scanning data, the method further includes: Acquire all data point groups in the silicon rod circumferential scanning data, each data point group includes M consecutive data points, where M is an integer not less than 3; Traversing each data point group, screening out the point with the largest median value in each data point group, wherein the point with the largest median value in each data point group is a local maximum point; According to the point with the largest intermediate value in each data point group, all local maximum value points in the silicon rod circumferential scanning data are obtained.

6. The crystal line detection method according to claim 1, characterized in that: Before the angle values ​​of the maximum value points in the at least one maximum value point group do not satisfy the first crystal line error condition, the method further includes: For each maximum point group in the at least one maximum point group, obtain four angle values ​​corresponding to four local maximum points in the maximum point group, determine whether each adjacent difference among the four angle values ​​of the maximum point group is within a first set difference, and obtain a first determination result, wherein the adjacent difference is a difference between two adjacent angles among the four angle values ​​of the maximum point group; and determining whether each interval difference among the four angle values ​​of the maximum point group is within a second set difference, and obtaining a second determination result, wherein the interval difference is a difference between two angle values ​​separated by one angle value among the four angle values ​​of the maximum point group; According to the first judgment result and the second judgment result of the maximum value point group, it is determined whether the angle value of the maximum value point in the maximum value point group satisfies the first crystal line error condition.

7. The crystal line detection method according to claim 6, characterized in that: The value range of the first set difference is 86°-94°, and the value range of the second set difference is 176°-184°.

8. The crystal line detection method according to claim 1, characterized in that: Screening out a target maximum point group whose angle values ​​of the maximum points satisfy the second crystal line error condition from the at least one maximum point group includes: For each maximum point group in the at least one maximum point group, obtain four angle values ​​corresponding to four local maximum points in the maximum point group, determine whether the four angle values ​​of the maximum point group meet the crystal line difference condition, and obtain a third determination result; According to the third judgment result of the maximum value point group, it is determined whether the angle value of the maximum value point in the maximum value point group satisfies the second crystal line error condition.

9. The crystal line detection method according to claim 8, characterized in that: Determine whether the four angle values ​​of the maximum point group meet the crystal line difference conditions, including: Determine whether the difference between each two adjacent angle values ​​of three angle values ​​among the four angle values ​​of the maximum point group is within a third set difference, and obtain a first determination sub-result of the maximum point group; Determine whether there are two interval differences among the four angle values ​​of the maximum point group that are within the fourth set difference, and obtain a second judgment sub-result of the maximum point group, wherein the interval difference is the difference between two angle values ​​that are separated by one angle value among the four angle values ​​of the maximum point group; According to the first judgment sub-result and the second judgment sub-result of the maximum value point group, it is judged whether the four angle values ​​of the maximum value point group meet the crystal line difference condition.

10. The crystal line detection method according to claim 9, characterized in that: Determining a target crystal line of the silicon rod according to the adjustment angle value of each maximum point in the target maximum point group includes: If the difference between each two adjacent angle values ​​in the three angle values ​​in the target maximum point group is within the third set difference, the remaining angle values ​​in the target maximum point group are adjusted to obtain an adjusted remaining angle value, wherein the remaining angle value is an angle value other than the three angle values ​​in the target maximum point group that satisfy the crystal line difference condition; The target crystal line is determined according to the three angle values ​​satisfying the crystal line difference condition in the target maximum point group and the adjusted remaining angle value.

11. The crystal line detection method according to claim 9, characterized in that: Determining a target crystal line of the silicon rod according to the adjustment angle value of each maximum point in the target maximum point group includes: If there are two interval differences among the four angle values ​​in the target maximum point group that are within the fourth set difference, each angle value in the target maximum point group is adjusted by an error averaging method to obtain an adjusted angle value of each maximum point in the target maximum point group; The target crystal line is determined according to the adjustment angle value of each maximum point in the target maximum point group.

12. The crystal line detection method according to claim 1, characterized in that: Screening out a target maximum point group whose angle values ​​of the maximum points satisfy the second crystal line error condition from the at least one maximum point group includes: For each maximum point group in the at least one maximum point group, obtain four angle values ​​corresponding to four local maximum points in the maximum point group, determine whether each adjacent difference among the four angle values ​​of the maximum point group is within a fifth set difference, and obtain a fourth judgment result, wherein the adjacent difference is the difference between two adjacent angles among the four angle values ​​of the maximum point group; and determine whether each interval difference among the four angle values ​​of the maximum point group is within a sixth set difference, and obtain a fifth judgment result, wherein the interval difference is the difference between two angle values ​​separated by one angle value among the four angle values ​​of the maximum point group; According to the fourth judgment result and the fifth judgment result of the maximum value point group, it is determined whether the angle value of the maximum value point in the maximum value point group satisfies the second crystal line error condition.

13. The crystal line detection method according to claim 12, characterized in that: The value range of the fifth set difference is 80°-100°, and the value range of the sixth set difference is 170°-190°.

14. The crystal line detection method according to claim 13, characterized in that: Determining a target crystal line of the silicon rod according to the adjustment angle value of each maximum point in the target maximum point group includes: If the angle values ​​of the four maximum points in the target maximum point group meet the second crystal line error condition, each angle value in the target maximum point group is adjusted by using an error averaging method to obtain an adjusted angle value of each maximum point in the target maximum point group; The target crystal line is determined according to the adjustment angle value of each maximum point in the target maximum point group.

15. A crystal line adjustment device, characterized in that: include: An acquisition module, configured to determine the convexity of all local maximum points in the circumferential scanning data of the silicon rod according to the acquired circumferential scanning data of the silicon rod, wherein the circumferential scanning data of the silicon rod includes a plurality of data points collected along the outer peripheral contour of the silicon rod; A combination module, used for combining N local maximum points to obtain at least one maximum point group, wherein the N local maximum points are local maximum points ranked first in terms of convexity among all the local maximum points, and N is an integer greater than or equal to 4; A screening module, configured to screen out a target maximum point group whose angle values ​​of the maximum points meet a second crystal line error condition from the at least one maximum point group when the angle values ​​of the maximum points in the at least one maximum point group do not meet a first crystal line error condition; The adjustment module is used to determine the target crystal line of the silicon rod according to the adjustment angle value of each maximum point in the target maximum point group.

16. An electronic device, characterized in that: include: A memory and a processor, wherein the processor is connected to the memory; The memory is used to store programs; The processor is used to call the program stored in the memory to execute the method according to any one of claims 1-14.

17. A computer-readable storage medium, characterized in that: A computer program is stored thereon, and when the computer program is executed by a processor, the method according to any one of claims 1 to 14 is executed.

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