Grid-supported metal film and preparation method thereof

Abstract

The invention relates to the technical field of precise optical elements, in particular to a grid-supported metal film and a preparation method thereof, and the preparation method of the grid-supported metal film comprises the steps: providing a substrate; forming a sacrificial layer on the substrate; forming a metal film on the surface, far away from the substrate, of the sacrificial layer, wherein the metal film is formed in an ion beam assisted thermal evaporation deposition mode or an ion beam assisted magnetron sputtering deposition mode; preparing a grid, and fixing the grid on the surface, far away from the sacrificial layer, of the metal film; and removing the sacrificial layer to separate the substrate from the metal thin film to obtain the grid supporting metal thin film. The method is at least beneficial to improving the quality of the grid-supported metal film.

Description

Technical Field

[0001] The invention belongs to the technical field of precision optical elements, and in particular relates to a grid-supported metal film and a preparation method thereof. Background Art

[0002] In high-end instruments, such as scanning electron microscopes, transmission electron microscopes, mass spectrometers, spectrophotometers, and spectrometers, there are harmful particles within a certain energy range. At the same time, pollutants such as particles and dust will also have a great impact on the performance of the instrument. The grid-supported metal film is only about 100nm thick and can effectively block harmful particles and particulate pollutants within a preset energy range, while allowing working particles to pass through, which is beneficial to improving the service life and performance of the instrument.

[0003] Specifically, in the optical system of extreme ultraviolet and far ultraviolet lithography machines, nanometer-scale particles on the mask will be exposed on the wafer, causing defects in the chip and greatly reducing the yield. By installing a metal film supported by a grid, the particle size allowed by the optical system can be magnified to the micron level, greatly reducing the stringency of the lithography machine's requirements for particle contamination, and greatly improving the yield of high-end chips manufactured by the lithography machine. In space science exploration activities, optical payloads are often disturbed by high-energy protons, electrons, ultraviolet rays, gamma rays and tiny space debris in space. Therefore, they are generally coated on their outer surfaces. However, although general coatings can block the intrusion of the above substances, they have the disadvantage of blocking the working band from entering the optical system. The metal film with a thickness of hundreds of nanometers supported by the grid can effectively block high-energy protons, electrons, ultraviolet rays, gamma rays and tiny space debris in space for the optical system. In addition, the metal film supported by the grid can also play a role in filtering light.

[0004] However, the thickness of the grid-supported metal film is at the submicron level, which is particularly easy to break, and there is usually vibration in the application scenario. Therefore, good adhesion between the metal film and the grid is required, which makes the preparation of the grid-supported metal film more difficult. At present, the grid-supported metal film prepared by related technologies has quality problems such as low transmittance, poor film flatness, and many pinholes. Summary of the invention

[0005] In view of this, the present invention aims to provide a grid-supported metal film and a preparation method thereof, which at least helps to improve the quality of the grid-supported metal film.

[0006] To achieve the above object, the technical solution created by the present invention is implemented as follows:

[0007] The invention provides a method for preparing a grid-supported metal film, comprising: providing a substrate; forming a sacrificial layer on the substrate; forming a metal film on a surface of the sacrificial layer away from the substrate, wherein the metal film is formed by: a deposition method of ion beam assisted thermal evaporation or a deposition method of ion beam assisted magnetron sputtering; preparing a grid, and fixing the grid on a surface of the metal film away from the sacrificial layer; removing the sacrificial layer to separate the substrate and the metal film, and obtaining a grid-supported metal film.

[0008] In some embodiments, preparing the grid includes: providing a substrate, and patterning the substrate using a photolithography process to form a grid; or, providing a conductive core mold corresponding to the shape of the grid, using the conductive core mold as a cathode, and forming a grid on the conductive core mold by electroforming.

[0009] In some embodiments, the surface on which the grid is fixed to the metal film has a groove, and forming the grid further includes: forming a groove on the surface of the grid using a photolithography process; before fixing the grid on the surface of the metal film away from the sacrificial layer, it further includes: forming an adhesive in the groove; fixing the grid on the surface of the metal film away from the sacrificial layer includes: using an adhesive to bond the grid to the surface of the metal film away from the sacrificial layer.

[0010] In some embodiments, the adhesive is epoxy resin glue, and forming the adhesive in the groove includes: injecting epoxy resin glue into the groove using a computer-controlled micrometer-level probe under a high-power dark field microscope.

[0011] In some embodiments, fixing the grid on the surface of the metal film away from the sacrificial layer includes: placing the grid on the surface of the metal film away from the sacrificial layer, forming a fixed metal layer on the side of the grid away from the metal film to fix the grid on the metal film, wherein the material of the fixed metal layer is the same as the material of the metal film.

[0012] In some embodiments, forming a metal film on a surface of the sacrificial layer away from the substrate includes: forming a metal film on a portion of the surface of the sacrificial layer away from the substrate, so that a portion of the surface of the sacrificial layer adjacent to an edge is exposed to the metal film.

[0013] In some embodiments, the material of the mesh includes at least one of stainless steel, nickel, or carbon, and the material of the metal film includes at least one of Al, Zr, In, Ge, or Mg.

[0014] In some embodiments, the material of the sacrificial layer includes NaCl, CsI, or photoresist.

[0015] In some embodiments, removing the sacrificial layer to separate the substrate and the metal film includes: placing the substrate formed with the sacrificial layer, the metal film and the grid on a carrier plate, using a stepper motor to slowly immerse the carrier plate into a stripping agent at an angle of 45°, the sacrificial layer contacts the stripping agent and dissolves, and the metal film formed with the grid is separated from the substrate to form a grid-supported metal film.

[0016] Another aspect of the present invention provides a grid-supported metal film, which is prepared by any of the above-mentioned methods for preparing a grid-supported metal film. The grid-supported metal film includes a grid and a metal film, and the grid is fixed on the surface of one side of the metal film.

[0017] Compared with the prior art, the invention can achieve the following beneficial effects: the embodiments of the invention provide a method for preparing a grid-supported metal film to address the technical problems of a grid-supported metal film having many pinholes, poor flatness, poor adhesion between the metal film and the grid, and the grid easily falling off the metal film when encountering vibrations. The method effectively alleviates the above problems and is conducive to the preparation of a grid-supported metal film with high flatness, good adhesion, few pinholes and high transmittance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments and descriptions of the present invention are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings:

[0019] Figure 1 A schematic diagram of some steps of a method for preparing a grid-supported metal film according to an embodiment of the present invention;

[0020] Figure 2 A schematic diagram of another part of the steps of the method for preparing a grid-supported metal film according to an embodiment of the present invention;

[0021] Figure 3 A schematic diagram of the structure of the grid lines with grooves according to an embodiment of the present invention;

[0022] Figure 4 A schematic diagram of the demoulding step described in an embodiment of the present invention. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the invention more clear, the invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the invention and do not constitute a limitation of the invention.

[0024] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0025] In the description of the invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the invention, unless otherwise specified, the meaning of "multiple" is two or more.

[0026] In the description of the invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances.

[0027] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0028] refer to Figure 1 and Figure 2The preparation method of the grid-supported metal film provided by the invention includes: providing a substrate 10; forming a sacrificial layer 11 on the substrate 10; forming a metal film 12 on the surface of the sacrificial layer 11 away from the substrate 10, and the method of forming the metal film 12 is: ion beam assisted thermal evaporation deposition method or ion beam assisted magnetron sputtering deposition method; preparing a grid 21, and fixing the grid 21 on the surface of the metal film 12 away from the sacrificial layer 11; removing the sacrificial layer 11 to separate the substrate 10 and the metal film 12, and obtaining a grid-supported metal film. In the process of forming the metal film 12, on the basis of traditional thermal evaporation or magnetron sputtering, the metal film 12 is formed by ion beam assisted deposition, which is conducive to reducing the stress of the metal film 12, ensuring that the metal film 12 has a high flatness after the substrate 10 and the metal film 12 are separated, which is conducive to improving the fixing stability of the metal film 12 and the grid 21, and further conducive to improving the quality of the grid-supported metal film.

[0029] In some embodiments, the ion source generating the ion beam may be at least one of a Hall source, a Hoffman source, and a radio frequency source. The ion beam assisted deposition may use argon as a working gas. The anode voltage in the ion beam assisted deposition may be in the range of 100V to 300V, the anode current may be in the range of 1A to 5A, and the deposition rate of the ion beam assisted thermal evaporation or the deposition rate of the ion beam assisted magnetron sputtering may both be in the range of 0.5nm / s to 1.5nm / s.

[0030] In some embodiments, the grid 21 is a grid structure with square holes, the line width of the grid 21 may be 30 μm, the thickness of the grid 21 may be 15 μm, the density of lines extending in the same direction may be 70 lines / inch, and the size of the square holes may be 330 μm×330 μm.

[0031] In some embodiments, the material of the grid 21 includes at least one of stainless steel, nickel or carbon. In other embodiments, the grid 21 may also be made of other materials, that is, the present invention does not limit the material of the grid 21, as long as it can ensure the formation of a grid-supported metal film.

[0032] In some embodiments, before forming the sacrificial layer 11 on the substrate 10, the method further includes: a substrate 10 cleaning step. Specifically, the substrate 10 can be ultrasonically cleaned with water and alcohol respectively. The ultrasonic frequencies of the water ultrasonic cleaning and the alcohol ultrasonic cleaning can be 40 kHz. The total cleaning time can be about 10 minutes. After cleaning, centrifugal drying is performed. The rotation speed of the centrifugal drying can be 3000 rpm. The substrate 10 after drying is tested for particle size. Specifically, a dark field microscope can be used to check the particles on the surface of the substrate 10 at a magnification of 200 times to ensure that the density of particles with a maximum size greater than 200 nm on the substrate 10 is less than 10 / mm 2 .

[0033] In some embodiments, the thermal evaporation method for forming the metal film 12 may be resistance thermal evaporation or electron beam thermal evaporation.

[0034] In some embodiments, when the metal film 12 is formed by magnetron sputtering, the background vacuum degree in the magnetron sputtering device before the working gas is introduced needs to be better than 4×10 -4 Pa, the working vacuum after the working gas is introduced can be around 0.1Pa.

[0035] In some embodiments, forming a metal film 12 on the surface of the sacrificial layer 11 away from the substrate 10 includes: forming a metal film 12 on a portion of the surface of the sacrificial layer 11 away from the substrate 10, so that a portion of the surface of the sacrificial layer 11 adjacent to the edge is exposed to the metal film 12. In other words, the orthographic projection of the metal film 12 on the surface of the substrate 10 falls within the orthographic projection of the sacrificial layer 11 on the surface of the substrate 10, which is conducive to avoiding the metal film 12 from being unable to be separated or being torn when the metal film 12 is subsequently separated from the substrate 10, that is, it is conducive to improving the integrity and quality of the metal film 12 in the subsequent grid-supported metal film. Specifically, a large-caliber shielding tool can be used when plating the sacrificial layer 11, and a small-caliber shielding tool can be used when plating the metal film 12.

[0036] In some embodiments, the material of the metal film 12 may include at least one of Al, Zr, In, Ge, or Mg.

[0037] In some embodiments, the material of the sacrificial layer 11 includes NaCl, CsI, or photoresist.

[0038] Specifically, in some examples, the material of the metal film 12 is Al, and the material of the corresponding sacrificial layer 11 is NaCl or CsI. The metal film 12 is formed by ion beam-assisted electron beam thermal evaporation, ion beam-assisted resistance thermal evaporation, or ion beam-assisted magnetron sputtering, and the sacrificial layer 11 is formed by resistance thermal evaporation.

[0039] In some examples, the material of the metal film 12 is Zr, and the material of the corresponding sacrificial layer 11 is NaCl or CsI. The metal film 12 is formed by ion beam assisted electron beam thermal evaporation or ion beam assisted magnetron sputtering, and the sacrificial layer 11 is formed by resistive thermal evaporation.

[0040] In some examples, the material of the metal film 12 is In, the material of the corresponding sacrificial layer 11 is NaCl or photoresist, the metal film 12 is formed by ion beam assisted resistance thermal evaporation or ion beam assisted magnetron sputtering, and the NaCl is formed by resistance thermal evaporation.

[0041] In some examples, the material of the metal film 12 is Ge, and the material of the corresponding sacrificial layer 11 is NaCl or CsI. The metal film 12 is formed by ion beam assisted electron beam thermal evaporation or ion beam assisted magnetron sputtering, and the NaCl or CsI is formed by resistive thermal evaporation.

[0042] In some examples, the material of the metal film 12 is Mg, and the material of the corresponding sacrificial layer 11 is NaCl or CsI. The metal film 12 is formed by ion beam assisted resistance thermal evaporation or ion beam assisted magnetron sputtering, and the method for forming NaCl or CsI can be resistance thermal evaporation.

[0043] It should be noted that, in the method for preparing a grid-supported metal film provided by the present invention, the grid 21 can be prepared in advance before forming the sacrificial layer 11 and the metal film 12 on the substrate 10 .

[0044] In some embodiments, preparing the grid 21 includes: providing a substrate, and patterning the substrate using a photolithography process to form the grid 21. In other embodiments, preparing the grid 21 includes: providing a conductive mandrel corresponding to the shape of the grid 21, using the conductive mandrel as a cathode, and forming the grid 21 on the conductive mandrel by electroforming.

[0045] The following describes the manufacturing process of the mesh 21 by taking the mesh 21 as a Ni mesh as an example.

[0046] In some examples, a Ni grid can be prepared by a photolithography process. Specifically, a photoresist can be coated on a substrate, and ultraviolet light of 200nm to 450nm is used to irradiate the photoresist on the substrate through a mask. The photoresist in the illuminated area undergoes a chemical reaction, and then the photoresist in the illuminated area is removed by a chemical method. In this way, the grid 21 pattern on the mask is copied on the photoresist, and then the portion of the substrate exposed by the photoresist is etched away by nanosecond laser lithography or femtosecond laser lithography. After removing the remaining photoresist, the remaining substrate can be used as the grid 21.

[0047] In some examples, Ni grids can also be prepared by electroforming. Specifically, a conductive core mold can be prepared in advance, the conductive core mold serves as a cathode, and Ni metal serves as an anode. Nickel sulfate can be selected as an electroforming solution. After power is turned on, the metal ions in the electroforming solution are reduced to Ni on the conductive core mold, and the Ni metal at the anode replenishes the reduced metal ions in the solution to keep the metal ion concentration in the electroforming solution unchanged. After the Ni on the conductive core mold reaches the desired thickness, electroforming is stopped, and finally the conductive core mold is separated from the deposited Ni to form a Ni grid.

[0048] In some embodiments, reference Figure 2 and Figure 3 The surface where the grid 21 is fixed to the metal film 12 has a groove 24, and forming the grid 21 further includes: forming the groove 24 on the surface of the grid 21 by using a photolithography process; before fixing the grid 21 on the surface of the metal film 12 away from the sacrificial layer 11, it also includes: forming an adhesive 22 in the groove 24; fixing the grid 21 on the surface of the metal film 12 away from the sacrificial layer 11 includes: using the adhesive 22 to bond the grid 21 to the surface of the metal film 12 away from the sacrificial layer 11. In some examples, the lines constituting the grid 21 can be photolithographically processed to form the groove 24 by using a nanosecond laser lithography or a femtosecond laser lithography method.

[0049] In some embodiments, grooves 24 having a width of 10 μm and a depth of 7 μm may be formed on the lines forming the grid 21 .

[0050] In some embodiments, the adhesive 22 is epoxy resin glue, and forming the adhesive 22 in the groove 24 includes: injecting epoxy resin glue into the groove 24 and smoothing it using a computer-controlled micrometer-level probe under a high-power dark field microscope. In some examples, the magnification of the high-power dark field microscope can be in the range of 200 times to 1000 times.

[0051] In some examples, the amount of epoxy resin glue in the groove 24 corresponding to the line surrounding a hole in the grid 21 is in the range of 0.1 g to 1 g.

[0052] In some embodiments, fixing the grid 21 on the surface of the metal film 12 away from the sacrificial layer 11 includes: placing the grid 21 on the surface of the metal film 12 away from the sacrificial layer 11, and forming a fixed metal layer 23 on the side of the grid 21 away from the metal film 12 to fix the grid 21 on the metal film 12, wherein the material of the fixed metal layer 23 is the same as the material of the metal film 12, that is, the two are the same substance, so that the two can be effectively bonded together in a homogeneous chemical bond bonding manner, which is conducive to improving the bonding strength. It should be noted that if the fixed metal layer 23 is used to fix the grid 21 on the metal film 12, there is no need to form a groove on the surface of the grid 21 facing the metal film 12.

[0053] In some examples, the thickness of the fixed metal layer 23 may be in the range of 5 nm to 15 nm.

[0054] In some embodiments, removing the sacrificial layer 11 to separate the substrate 10 and the metal film 12 includes: placing the substrate 10 formed with the sacrificial layer 11, the metal film 12 and the grid 21 on a carrier plate, and using a stepper motor to slowly immerse the carrier plate in a stripping agent at an angle of 45°, so that the sacrificial layer 11 contacts the stripping agent and dissolves, and the metal film 12 formed with the grid 21 is separated from the substrate 10 to form a grid-supported metal film.

[0055] It should be noted that for sacrificial layers 11 of different materials, corresponding release agents need to be selected. When the material of the sacrificial layer 11 is NaCl or CsI, water can be used as the release agent. When the sacrificial layer 11 is photoresist, acetone can be used as the release agent.

[0056] For the specific steps of removing the sacrificial layer 11 to separate the substrate 10 and the metal film 12, please refer to Figure 4 , put a stripping agent in a beaker, place the substrate 10 coated with a sacrificial layer 11, a metal film 12 and a grid 21 on a carrier plate, and the carrier plate is controlled by a stepping electrode and slowly immersed in the stripping agent at a 45° inclination angle. When the sacrificial layer 11 contacts the stripping agent, the sacrificial layer 11 begins to dissolve. As the sacrificial layer 11 dissolves, the metal film 12 adhered to the grid 21 slowly floats on the surface of the stripping agent. In this way, the metal film 12 adhered to the grid 21 is separated from the substrate 10, forming a grid-supported metal film.

[0057] It should be noted that, when the grid-supported metal film prepared by the grid-supported metal film preparation method provided by the embodiment of the present invention was observed under a dark field microscope, no pinholes were found in the grid-supported metal film. Under the experimental parameters of a frequency range of 10Hz to 2000Hz, a vibration amplitude of 0.5g, and a scanning rate of 4oct / min, a positive rotation vibration experiment was carried out on the grid-supported metal film. After the experiment, no grid shedding and pinholes were found, indicating that the grid-supported metal film preparation method provided by the embodiment of the present invention can prepare a grid-supported metal film of higher quality.

[0058] Another aspect of the present invention provides a grid-supported metal film, which is prepared by the method for preparing a grid-supported metal film provided by any of the above embodiments. The grid-supported metal film includes a grid and a metal film, and the grid is fixed on the surface of one side of the metal film.

[0059] In the preparation method of the grid-supported metal film provided by the present invention, a corresponding sacrificial layer and a release agent are selected according to the material of the metal film, thereby solving the problem that the metal film is difficult to be demolded; ion beam assisted deposition is used to eliminate the stress of the metal film, thereby solving the problem that the metal film is prone to cracking during the demolding process; a method for plating a sacrificial layer of different apertures and a metal film is used, thereby solving the problem that the edge of the metal film is difficult to be demolded; a bonding method of groove coating or homogeneous chemical bonding is used to improve the adhesion between the metal film and the grid; the prepared grid-supported metal film has high quality, eliminates pinholes, enhances the adhesion between the metal film and the grid, eliminates wrinkles in the metal film, obtains a metal film with high flatness, and solves the problems of cracking, pinholes, wrinkles and difficulty in demolding that are prone to occur during the preparation of the grid-supported metal film.

[0060] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.

[0061] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a grid-supported metal film, characterized in that: include: providing a substrate; forming a sacrificial layer on the substrate; forming a metal film on a surface of the sacrificial layer away from the substrate, wherein the metal film is formed by ion beam assisted thermal evaporation or ion beam assisted magnetron sputtering; preparing a grid, and fixing the grid on the surface of the metal film away from the sacrificial layer; The sacrificial layer is removed to separate the substrate and the metal film to obtain the grid-supported metal film.

2. The method for preparing a grid-supported metal film according to claim 1, characterized in that: The preparation of the grid comprises: Providing a substrate, and patterning the substrate using a photolithography process to form the grid; Alternatively, a conductive core mold corresponding to the shape of the grid is provided, the conductive core mold is used as a cathode, and the grid is formed on the conductive core mold by electroforming.

3. The method for preparing a grid-supported metal film according to claim 2, characterized in that: The surface where the grid and the metal film are fixed has a groove, and forming the grid further comprises: forming the groove on the surface of the grid by using a photolithography process; Before fixing the grid to the surface of the metal film away from the sacrificial layer, the method further comprises: forming an adhesive in the groove; Fixing the grid on the surface of the metal film away from the sacrificial layer includes: using the adhesive to adhere the grid to the surface of the metal film away from the sacrificial layer.

4. The method for preparing a grid-supported metal film according to claim 3, characterized in that: The adhesive is epoxy resin glue, and forming the adhesive in the groove includes: Under a high-power dark-field microscope, the epoxy resin glue is injected into the groove using a computer-controlled micrometer-level probe.

5. The method for preparing a grid-supported metal film according to claim 2, characterized in that: Fixing the grid on the surface of the metal film away from the sacrificial layer comprises: The grid is placed on a surface of the metal film away from the sacrificial layer, and a fixed metal layer is formed on a side of the grid away from the metal film to fix the grid on the metal film, wherein the material of the fixed metal layer is the same as that of the metal film.

6. The method for preparing a grid-supported metal film according to claim 1, characterized in that: Forming a metal film on the surface of the sacrificial layer away from the substrate includes: forming a metal film on a portion of the surface of the sacrificial layer away from the substrate, so that a portion of the surface of the sacrificial layer adjacent to the edge is exposed to the metal film.

7. The method for preparing a grid-supported metal film according to claim 1, characterized in that: The material of the grid includes at least one of stainless steel, nickel or carbon, and the material of the metal film includes at least one of Al, Zr, In, Ge or Mg.

8. The method for preparing a grid-supported metal film according to claim 1, characterized in that: The material of the sacrificial layer includes NaCl, CsI or photoresist.

9. The method for preparing a grid-supported metal film according to claim 1, characterized in that: Removing the sacrificial layer to separate the substrate and the metal film includes: placing the substrate formed with the sacrificial layer, the metal film and the grid on a carrier plate, using a stepper motor to slowly immerse the carrier plate into a stripping agent at an angle of 45°, the sacrificial layer contacts the stripping agent and dissolves, and the metal film formed with the grid is separated from the substrate to form the grid-supported metal film.

10. A grid-supported metal film, characterized in that: The grid-supported metal film is prepared by the method for preparing a grid-supported metal film according to any one of claims 1 to 9, and the grid-supported metal film comprises a grid and a metal film, wherein the grid is fixed on a surface of one side of the metal film.

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