Monomer rotation space type ALD deposition coating equipment

Abstract

The invention discloses single rotation space type ALD deposition coating equipment which comprises a main cavity, a left cavity door and a right cavity door, the left cavity door and the right cavity door are connected to the two sides of the main cavity through cavity door hinges correspondingly, the left cavity door and the right cavity door can form an independent vacuum reaction cavity with the main cavity, multi-cavity rotating frames are designed on the left cavity door and the right cavity door correspondingly, and the multi-cavity rotating frames are connected to the left cavity door and the right cavity door. The multi-cavity rotating stand is divided into 4n independent single-face opening areas, an independent cavity is formed in the side, facing the side wall of the cavity, of the opening direction, and a vacuum reaction cavity composed of the main cavity, the left cavity door and the right cavity door is equally divided into 4n functional areas corresponding to the multi-cavity rotating stand. A first vacuum isolation area, a precursor B reaction area, a second vacuum isolation area and a precursor A reaction area are correspondingly arranged according to clockwise circulation. A single process cavity is matched with a double-cavity-door structure, cooling and feeding before discharging are carried out while process production is carried out, a plurality of equant independent function subareas are designed to be matched with a multi-cavity rotating frame, the process rhythm is improved, air source consumption is reduced, and the production cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of film coating equipment, and in particular to a single-body rotating space type ALD deposition film coating equipment. Background Art

[0002] Atomic layer deposition (ALD) is a high-precision thin film deposition technology based on chemical vapor deposition, which grows thin films layer by layer in atomic layers. With its excellent three-dimensional conformality, uniformity of large-area film formation, and precise film thickness control, ALD technology has become increasingly advantageous and has broad application prospects in semiconductor manufacturing, MEMS devices, optics, and other fields.

[0003] ALD can be divided into time-based ALD and space-based ALD. In traditional time-based ALD, precursors are injected into a chamber in sequence and separated by a cleaning purge step. In space-based ALD, precursors are continuously supplied at different locations and kept separate by inert gas areas, and film growth is achieved by exposing the silicon wafer to locations containing different precursors. Since the interval purge step is eliminated, the space-based ALD process becomes faster and easier to scale than time-based ALD.

[0004] Traditional time-type ALD equipment places silicon wafers into a single chamber of the coating deposition equipment, heats them to the reaction temperature in sequence, introduces precursor A for adsorption, blows away the residual precursor A in the coating equipment, introduces precursor B to react with precursor A on the surface of the silicon wafer, and coats a required atomic layer on the surface of the wafer disk, and blows away the residual precursor B in the coating equipment. Since the process reaction is carried out in a single chamber, the equipment is prone to insufficient cleanliness during the production process, resulting in low product quality and a large number of defective products.

[0005] In addition, the traditional time-based ALD process repeatedly introduces precursors and purges inert gases, resulting in poor precursor utilization efficiency, which further limits its ability to use expensive precursors in large-scale applications. Therefore, designing a spatial ALD continuous production process can effectively reduce precursor consumption and thus reduce costs. Summary of the invention

[0006] In order to solve the problems of poor precursor utilization efficiency, high production cost and relatively low equipment efficiency of traditional time-type ALD, the present invention provides a single rotating space type ALD deposition coating equipment.

[0007] In order to solve the above technical problems, the technical solution adopted by the present invention is: a single-body rotary space type ALD deposition coating equipment, including a main chamber, a left chamber door, and a right chamber door, wherein the left chamber door and the right chamber door are respectively connected to the two sides of the main chamber through chamber door hinges, and the left chamber door and the right chamber door can form an independent vacuum reaction chamber with the main chamber, and the left chamber door and the right chamber door are respectively designed with a multi-chamber rotating rack, and the multi-chamber rotating rack is divided into 4n independent single-sided opening areas, and the opening direction is toward one side of the chamber side wall to form an independent chamber, and each chamber is provided with a small turntable to carry the silicon wafer Rack, each silicon wafer rack can hold multiple layers of silicon wafers for simultaneous coating, the main cavity and the left cavity door and the right cavity door respectively form an independent vacuum reaction chamber, corresponding to the multi-chamber rotating rack, which is equally divided into 4n functional areas, which correspond to the first vacuum isolation area, the precursor B reaction area, the second vacuum isolation area, and the precursor A reaction area in a clockwise cycle, and the side walls of the main cavity corresponding to each functional area are respectively designed with a vacuum flange + purge inert gas introduction pipe, a precursor B gas introduction pipe, a vacuum flange + purge inert gas introduction pipe, and a precursor A gas introduction pipe.

[0008] Furthermore, the main cavity, the left cavity door, and the right cavity door are all semi-cylindrical structures, and the main cavity has a plurality of legs and is directly mounted and fixed on the floor or platform.

[0009] Furthermore, the multi-chamber rotating frame is a cylindrical structure, which is welded by stainless steel round tubes and steel plates.

[0010] Furthermore, the vacuum flange ends are all connected to vacuum valves and finally connected to vacuum pumps.

[0011] Furthermore, the gas introduction pipes are all connected to gas pulse control valves and finally connected to corresponding gas cylinders or factory gas supply terminals.

[0012] Furthermore, the rotation of the multi-chamber rotating rack and the small turntable is controlled by a reciprocating rotating device.

[0013] Furthermore, the orbital and self-rotation rotating device is composed of a power input gear arranged at the bottom of the main cavity and a high-speed orbital and self-rotation transmission mechanism installed under the multi-chamber turntable. The power input gear drives the multi-chamber turntable to orbit and the small turntable to rotate through the high-speed orbital and self-rotation transmission mechanism.

[0014] Furthermore, the gap between the main cavity and the multi-chamber rotating frame is less than 1 mm, so that the inert gas is blown to form an air isolation zone at the junction, ensuring that each partition is effectively isolated.

[0015] From the above description of the structure of the present invention, it can be seen that compared with the prior art, the present invention has the following advantages:

[0016] 1. The present invention adopts spatial ALD continuous production, uses a single process chamber and a double chamber door structure, and can perform cooling and loading before unloading during process production, thereby improving the production cycle. A plurality of equally divided independent functional partitions are designed to cooperate with a multi-chamber turntable to facilitate cavity expansion and capacity expansion. One rotation of the multi-chamber turntable can be one or more ALD cycles, which greatly improves the process cycle, further improves the coating uniformity and coating efficiency, effectively reduces gas source consumption, and thus reduces production costs.

[0017] 2. All process gases of the present invention are controlled by gas pulse control valves, which can accurately control the quantitative supply of precursors, effectively reduce gas source waste, and thus better control costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting a part of this application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0019] Figure 1 It is an axonometric view of the overall structure of Example 1;

[0020] Figure 2 This is a top view of Example 1 with the left chamber door closed, the right chamber door open, and the loading completed;

[0021] Figure 3 This is a top view of Example 1 with the left and right chamber doors open and no material loaded;

[0022] Figure 4 This is a top view of Example 2 with the left and right chamber doors open and no material loaded. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0024] Example 1

[0025] refer to Figure 1-Figure 3A single-body rotary space type ALD deposition coating equipment comprises a main chamber 1, a left chamber door 2, and a right chamber door 3. The left chamber door 2 and the right chamber door 3 are respectively connected to the two sides of the main chamber 1 through chamber door hinges 9. The left chamber door 2 and the right chamber door 3 can form an independent vacuum reaction chamber with the main chamber 1. The left chamber door and the right chamber door are respectively designed with a multi-chamber rotating rack 4. The multi-chamber rotating rack 4 is divided into eight independent single-sided opening areas, and the opening direction is toward the side wall of the chamber to form an independent chamber. A small turntable 5 is provided in each chamber to carry a silicon wafer rack 7. Each silicon wafer rack 7 can place multiple layers of silicon wafers 6 for simultaneous coating. The main chamber 1 forms an independent vacuum reaction chamber with the left chamber door 2 and the right chamber door 3. The empty reaction chamber is divided into eight functional areas corresponding to the multi-chamber turntable, which correspond to the first vacuum isolation area a, the precursor B reaction area b, the second vacuum isolation area c, and the precursor A reaction area d in a clockwise cycle. The side walls of the main chamber corresponding to each functional area are respectively designed with a vacuum flange 10+a purge inert gas introduction pipe 11, a precursor B gas introduction pipe 12, a vacuum flange 10+a purge inert gas introduction pipe 11, and a precursor A gas introduction pipe 13. The ends of the vacuum flanges 10 are connected to vacuum valves 14 and finally to vacuum pumps. The gas introduction pipes are connected to gas pulse control valves 15 and finally to corresponding gas cylinders or factory gas supply ends.

[0026] The main cavity 1, the left cavity door 2, and the right cavity door 3 are all semi-cylindrical structures. The main cavity 1 has a plurality of legs and is directly mounted and fixed on the floor or platform.

[0027] The multi-chamber rotating frame 4 is a cylindrical structure, which is welded by stainless steel round tubes and steel plates. The gap between the main cavity 1 and the multi-chamber rotating frame 4 is less than 1 mm, so that the inert gas is blown at the intersection to form an air isolation zone, ensuring effective isolation of each partition.

[0028] The rotation of the multi-chamber turret 4 and the small turntable 5 is provided with control power through the orbital rotation rotation device 8, and the orbital rotation rotation device 8 is composed of a power input gear 81 set at the bottom of the main cavity and a high-speed orbital rotation transmission mechanism 82 installed under the multi-chamber turret. The power input gear 81 drives the multi-chamber turret 4 to orbit and the small turntable 5 to rotate through the high-speed orbital rotation transmission mechanism 82.

[0029] The process flow is as follows: the wafer rack 7 loaded with multi-layer silicon wafers 6 is loaded and placed on the eight small turntables of the multi-chamber turntable 4 in the right chamber door 3 by the automated loading and unloading equipment for positioning and fixing, then the right chamber door 3 is closed and all vacuum pumps and vacuum valves 14 are opened to evacuate the chamber, and the corresponding preheating treatment is performed until the chamber meets the ALD coating process reaction conditions. At this time, the orbital rotation device 8 runs and drives the multi-chamber turntable 4 to orbit and drives the small turntable 5 to rotate; then the gas pulse control valves 15 corresponding to all precursor A reaction zones d are opened, and gas is introduced into the corresponding chamber. Trimethylaluminum (TMA) as an aluminum source is quantitatively supplied to the gas phase precursor A through the gas pulse control valve 15, so that it undergoes adsorption reaction on all exposed surfaces of the silicon wafer in the reaction zone; the multi-chamber rotating frame 4 continuously revolves clockwise, and the small turntable 5 continuously rotates. When the multi-chamber rotating frame 4 rotates to make the chamber where the precursor A has been adsorbed rotate into the vacuum isolation zone c, it is evacuated by a vacuum pump to take the excess precursor A and by-products out of the reaction chamber, and an inert gas (such as nitrogen) can also be introduced to assist in purging, so as to more efficiently remove the excess gas and by-products in the chamber. Subsequently, when the chamber that has been evacuated and purged with inert gas begins to enter the precursor B reaction zone b, the pulse valves corresponding to all precursor B reaction zones b are opened, and the oxidizing gas as a water source is introduced into the corresponding chamber, and the quantitative supply of the gas phase precursor B is controlled by the gas pulse control valve, so that it undergoes oxidation reaction on all exposed surfaces of the silicon wafer in the reaction zone. When the multi-chamber rotating frame 4 rotates to make the chamber that has been reacted with precursor B rotate and enter the first vacuum isolation zone a, the vacuum pump is used to evacuate the chamber to take out the excess precursor B and by-products from the reaction chamber, and an inert gas (such as nitrogen) can also be introduced to assist in purging, so as to more efficiently remove the excess gas and by-products in the chamber. After the precursor A is attached, purged and evacuated, the precursor B reacts, and purged and evacuated in sequence, a single atomic layer of thin film deposition is completed on the surface of the silicon wafer. With the continuous clockwise rotation of the chamber rotating frame 4, the chamber that has completed the deposition of a single atomic layer of thin film enters the precursor A reaction zone d again to carry out the next coating cycle, and the coating is carried out through continuous operation control to complete the multi-layer atomic layer deposition until the coating thickness is reached, and then the process coating is stopped and the cooling treatment is carried out. After the cooling treatment is completed, the right chamber door is opened, and the silicon wafer rack 7 loaded with multi-layer silicon wafers 6 is unloaded by the automatic loading and unloading equipment.

[0030] When the right chamber 3 is closed for coating reaction, the automated loading and unloading equipment is responsible for placing the silicon wafer rack 7 loaded with multi-layer silicon wafers 6 on the eight small turntables 5 of the multi-chamber turntable 4 in the left chamber door for positioning and fixing; when the right chamber 3 completes the coating reaction and unloading processing, the left and right chambers alternately complete the corresponding operation processes for continuous operation and production.

[0031] Example 2

[0032] Different from Example 1, the multi-chamber rotating frame 4 of Example 2 is divided into four independent single-sided opening areas, and the main chamber 1, the left chamber door 2, and the right chamber door 3 respectively form independent vacuum reaction chambers, and the corresponding multi-chamber rotating frame is divided into four functional areas, which are the first vacuum isolation area a, the precursor B reaction area b, the second vacuum isolation area c, and the precursor A reaction area d in chronological order. The rest of the settings are the same as Example 1.

[0033] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A single-unit rotary space type ALD deposition coating equipment, characterized in that: The invention comprises a main chamber (1), a left chamber door (2), and a right chamber door (3), wherein the left chamber door (2) and the right chamber door (3) are respectively connected to two sides of the main chamber (1) via chamber door hinges (9), and the left chamber door (2) and the right chamber door (3) can form an independent vacuum reaction chamber with the main chamber (1), and the left chamber door (2) and the right chamber door (3) are respectively provided with a multi-chamber rotating rack (4), and the multi-chamber rotating rack (4) is divided into 4n independent single-sided opening areas, and the opening direction faces one side of the chamber side wall to form an independent chamber, and each chamber is provided with a small rotating table (5) for carrying a silicon wafer rack (7), and each silicon wafer rack (7) can hold multiple layers of silicon wafers (6) for simultaneous The main chamber (1) and the left chamber door (2) and the right chamber door (3) form an independent vacuum reaction chamber, which is divided into 4n functional areas corresponding to the multi-chamber rotating frame (4). In a clockwise cycle, they correspond to the first vacuum isolation area (a), the precursor B reaction area (b), the second vacuum isolation area (c), and the precursor A reaction area (d). The side walls of the main chamber corresponding to each functional area are respectively designed with a vacuum flange (10) + a purge inert gas introduction pipe (11), a precursor B gas introduction pipe (12), a vacuum flange (10) + a purge inert gas introduction pipe (11), and a precursor A gas introduction pipe (13).

2. According to claim 1, a single-unit rotary space type ALD deposition coating device is characterized in that: The main cavity (1), the left cavity door (2), and the right cavity door (3) are all semi-cylindrical structures. The main cavity (1) has a plurality of legs and is directly mounted and fixed on a floor or a platform.

3. According to claim 1, a single-unit rotary space type ALD deposition coating device is characterized in that: The multi-chamber rotating frame (4) is a cylindrical structure formed by welding stainless steel round tubes and steel plates.

4. The single-unit rotary space type ALD deposition coating device according to claim 1, characterized in that: Both ends of the vacuum flange (10) are connected to a vacuum valve (14) and finally connected to a vacuum pump.

5. The single-unit rotary space type ALD deposition coating device according to claim 1, characterized in that: The gas introduction pipes are all connected to a gas pulse control valve (15) and finally connected to a corresponding gas cylinder or a factory gas supply terminal.

6. The single-unit rotary space type ALD deposition coating device according to claim 1, characterized in that: The rotation of the multi-chamber rotating frame (4) and the small rotating table (5) is controlled by a reciprocating rotating device (8) providing control power.

7. The single-unit rotary space type ALD deposition coating device according to claim 5, characterized in that: The orbital rotation device (8) is composed of a power input gear (81) arranged at the bottom of the main cavity and a high-speed orbital rotation transmission mechanism (82) installed below the multi-chamber rotating frame. The power input gear (81) drives the multi-chamber rotating frame (4) to orbit and the small turntable (5) to rotate via the high-speed orbital rotation transmission mechanism (82).

8. The single-unit rotary space type ALD deposition coating device according to claim 1, characterized in that: The gap between the main cavity (1) and the multi-chamber rotating frame (4) is less than 1 mm, so that the inert gas is blown at the junction to form an air isolation zone.

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