Three-band infrared thermometry methods, temperature monitoring methods, and calculation equipment

Abstract

This invention provides a method for three-band infrared temperature measurement, a temperature monitoring method, and a calculation device. The method includes determining a first set of parameter values ​​for a first temperature range using a radiation formula at a first wavelength; determining a second set of parameter values ​​for a second temperature range using the same radiation formula at a second wavelength; determining a third set of parameter values ​​for a third temperature range using the same radiation formula at a third wavelength; and applying the first, second, and third set of parameter values ​​to temperature measurements in the first, second, and third temperature ranges, respectively. According to the technical solution of this invention, more accurate three-band temperature measurement is achieved.

Description

Technical Field

[0001] This invention relates to the field of temperature measurement technology, specifically to a three-band infrared temperature measurement method, a temperature monitoring method, and a calculation device. Background Technology

[0002] Infrared thermometry technology is widely used in various fields such as steel smelting, ceramic sintering, fire prediction, and new materials research because of its advantages such as non-contact operation, fast temperature measurement speed, and wide temperature measurement range.

[0003] Existing temperature standards are calibrated using blackbodies from national metrology units. Blackbodies are objects with maximum emissivity and absorptivity, but they do not exist in nature. The emissivity of various actual objects being measured is lower than that of a blackbody, so emissivity correction is necessary.

[0004] Emissivity correction methods originated in the late 19th century and are still in use today. However, the difficulty with existing emissivity correction methods lies in the fact that the emissivity of the object being measured varies with complex factors such as the object's material composition, surface condition, wavelength, radiation temperature, radiation conditions, and surrounding environment, making it difficult to provide an accurate value. This limits the temperature measurement accuracy of traditional infrared thermometers.

[0005] Currently, the emissivity correction method can only achieve a measurement accuracy of 1% of the temperature of the object being measured. In addition, when there are windows or copper slag deposits in front of the object being measured, the emissivity correction method will also cause a large error in the temperature measurement.

[0006] Therefore, a technical solution is needed to achieve high-precision infrared temperature measurement. Summary of the Invention

[0007] The present invention aims to provide a method for three-band infrared temperature measurement, a temperature monitoring method, and a computing device to achieve three-band temperature measurement and meet the high-precision requirements of temperature measurement.

[0008] According to one aspect of the present invention, a method for three-band infrared thermometry is provided, the method comprising:

[0009] At the first wavelength, determine the first set of parameter values ​​for the radiation formula for the first temperature range;

[0010] At the second wavelength, determine the second set of parameter values ​​for the radiation formula for the second temperature range;

[0011] At the third wavelength, determine the third set of parameter values ​​for the radiation formula for the third temperature range;

[0012] The first set of parameter values, the second set of parameter values, and the third set of parameter values ​​are used for temperature measurement in the first temperature range, the second temperature range, and the third temperature range, respectively.

[0013] According to some embodiments, the adjacent first temperature range, second temperature range and third temperature range are determined by a first temperature, a second temperature, a third temperature and a fourth temperature.

[0014] According to some embodiments, the radiation formula is as follows:

[0015]

[0016] In the formula, Here, λ is the radiation intensity, T is the temperature, and γ and δ are the emissivity coefficients used as parameters, with γ measured in watts per centimeter. 2 The unit of δ is centimeters per kilometer (cm·K).

[0017] According to some embodiments, the first set of parameter values, the second set of parameter values, and the third set of parameter values ​​are determined in the following manner:

[0018] The first set of parameter values ​​are calculated by using a first radiation intensity obtained at the first temperature and a second radiation intensity obtained at the second temperature;

[0019] The second set of parameter values ​​are calculated using the second radiation intensity and the third radiation intensity obtained at the third temperature;

[0020] The third set of parameter values ​​is calculated using the third radiation intensity and the fourth radiation intensity obtained at the fourth temperature.

[0021] According to some embodiments, the first temperature range is 30℃ to 100℃, the second temperature range is 100℃ to 800℃, and the third temperature range is 800℃ to 2500℃.

[0022] According to some embodiments, the first wavelength, the second wavelength, and the third wavelength are the same.

[0023] According to some embodiments, the first wavelength, the second wavelength, and the third wavelength are different from each other.

[0024] According to some embodiments, the first wavelength, the second wavelength, and the third wavelength are determined in the following manner:

[0025] Determine the fifth, sixth, and seventh temperatures within the first, second, and third temperature ranges, respectively;

[0026] By changing the wavelength at the fifth, sixth, and seventh temperatures, respectively, the first, second, and third relationship curves between radiation intensity and radiation wavelength were obtained.

[0027] The wavelengths corresponding to the points on the first, second, and third relationship curves where the product of curvature and the rate of change of curvature is minimized are respectively determined as the first wavelength, the second wavelength, and the third wavelength.

[0028] According to another aspect of the present invention, a method for temperature monitoring in semiconductor manufacturing or sintering processes is provided, including the three-band infrared thermometry method as described in any of the preceding claims.

[0029] According to another aspect of the present invention, a computing device is provided, comprising:

[0030] Processor; and

[0031] A memory storing a computer program that, when executed by the processor, causes the processor to perform the method described in any of the preceding methods.

[0032] According to embodiments of the present invention, parameter values ​​for the radiation formula are determined for a first temperature range, a second temperature range, and a third temperature range, respectively. Considering the different radiation characteristics of substances in different temperature ranges, determining the parameter values ​​for the radiation formula separately for each temperature range ensures more accurate measurement results within that temperature range. A first set of parameter values, a second set of parameter values, and a third set of parameter values ​​are set for temperature measurements in the first, second, and third temperature ranges, respectively. Each temperature range has its specific radiation characteristics. By customizing a set of parameter values ​​for each temperature range, it is ensured that these parameters optimally match the physical phenomena within that range, thereby improving measurement accuracy. Using parameter values ​​optimized for a specific temperature range more accurately reflects the actual situation and reduces errors caused by assumptions or general values.

[0033] According to some embodiments, a first temperature range (low temperature band), a second temperature range (medium temperature band), and a third temperature range (high temperature band) are set to form a three-band temperature measurement range. Adjacent temperature ranges are determined by the first, second, third, and fourth temperatures. This results in fast sampling speed, a wide temperature measurement range, and the ability to measure low, medium, and high temperatures on a single device. The transition from low to high temperatures is smoother and more natural, which is beneficial for data analysis and processing.

[0034] It should be understood that the above general description and the following detailed description are merely exemplary and do not limit the invention. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below.

[0036] Figure 1A flowchart of a three-band infrared thermometry method according to an example embodiment is shown.

[0037] Figure 2 A graph showing the absolute temperature and relative radiation intensity for a first temperature range according to some embodiments is shown.

[0038] Figure 3 The graph shows the absolute temperature and relative radiation intensity for a second temperature range according to some embodiments.

[0039] Figure 4 The graph shows the absolute temperature and relative radiation intensity in the third temperature range according to some embodiments.

[0040] Figure 5 The graphs showing absolute temperature and relative radiation intensity across the entire temperature range are shown according to some embodiments.

[0041] Figure 6 A schematic diagram of a three-band infrared temperature measurement system according to an example embodiment is shown.

[0042] Figure 7 A block diagram of a computing device according to an exemplary embodiment is shown. Detailed Implementation

[0043] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that the invention will be thorough and complete, and the concept of the exemplary embodiments will be fully conveyed to those skilled in the art. The same reference numerals in the drawings denote the same or similar parts, and therefore repeated descriptions of them will be omitted.

[0044] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a full understanding of embodiments of the invention. However, those skilled in the art will recognize that the technical solutions of the invention can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of the invention.

[0045] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0046] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0047] It should be understood that although the terms first, second, third, etc., may be used herein to describe various components, these components should not be limited by these terms. These terms are used to distinguish one component from another. Therefore, the first component discussed below may be referred to as the second component without departing from the teachings of the present invention. As used herein, the term "and / or" includes all combinations of any and more of the associated listed items.

[0048] Those skilled in the art will understand that the accompanying drawings are merely schematic diagrams of exemplary embodiments, and the modules or processes in the drawings are not necessarily essential for implementing the present invention, and therefore cannot be used to limit the scope of protection of the present invention.

[0049] Infrared thermometry has been used for many years, but the measurement accuracy of current technology is not high, reaching only 1% of the measured value. Another problem with infrared thermometry is that the physical characteristics and technical implementation methods differ across different temperature ranges.

[0050] Existing temperature standards are all calibrated using blackbodies from relevant national metrology units. A blackbody is an object with maximum emissivity and absorptivity. The emissivity of various actual objects being measured is lower than that of a blackbody, so emissivity correction is necessary.

[0051] The physical model of an ideal blackbody is described by Planck's formula:

[0052] ε(λ, T)=C1λ -5 ﹝exp(C2 / λT)-1﹞ -1

[0053] In the formula, ε(λ, T) is the blackbody radiation spectral power intensity, with units of watt-cm. 2 · micrometer -1 C1 = 3.74 × 10 -12 The first radiation constant, in watt-cm. 2 C2 = 1.43 cm·K, which is the second radiation constant; λ is the wavelength of spectral radiation in micrometers; T is the blackbody temperature in K.

[0054] In Planck's temperature measurement formula, C1 and C2 are two constants applicable only when the radiating body is a blackbody. At any temperature, the power of blackbody radiation changes continuously with wavelength. As temperature increases, the wavelength corresponding to the maximum radiant power decreases, indicating that the proportion of short-wavelength components in blackbody radiation increases with temperature. This radiation characteristic is independent of the blackbody's material and depends only on its absolute temperature. The inventors discovered that these two constants can be transformed into variables that vary with the material composition, properties, and shape of the radiating body, introducing the concept of the emissivity coefficient as a parameter. The temperature measurement formula still retains the core of Planck's formula; that is, the temperature measurement formula of this invention is a creative extension of Planck's formula.

[0055] With the development of technology, magnetism can now be measured in Gauss and electric current in picoamperes (10⁻⁶). -12 Amperes), and time can now be measured down to femtoseconds (10). -15 (seconds). However, the temperature can currently only be measured between 0.1℃ and 1℃. Existing infrared thermometry technology is no longer suitable for the temperature requirements of various rapidly developing fields.

[0056] To address this issue, this invention proposes a three-band infrared temperature measurement method to solve the problem of continuous temperature measurement across low, medium, and high temperature bands, thereby achieving high-precision temperature measurement.

[0057] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of the present invention.

[0058] Traditional infrared thermometry methods determine temperature based on the spectral radiative power of blackbody radiation calibrated at a specific temperature. This typically requires consideration of the aperture distance factor (D / S), making it difficult to adjust the detection distance and field of view. The measurement range is narrow, requiring segmented measurements such as low, medium, and high temperatures, and is susceptible to interference from flames and smoke.

[0059] Because the spectral radiant power intensity of the actual object being measured is difficult to accurately determine, this limits the accuracy of temperature measurement. Besides the low accuracy, conventional methods involve segmented temperature measurements, resulting in discontinuous temperature values ​​from different thermometers, making continuous temperature control difficult. This is because the emissivity correction values ​​between different temperature ranges, such as high temperature (>1000℃) and medium temperature (600℃~1000℃), are also difficult to effectively coordinate. Therefore, current traditional thermometers are all segmented, measuring high, medium, and low temperatures.

[0060] Furthermore, current infrared thermometry, due to its emissivity correction scheme, has low accuracy, reaching only 1% of the measured value, which is incompatible with the development of modern technology. For example, high-frequency heated crystal growth furnaces require strict automatic temperature control with an accuracy of a few tenths of a degree, and the measurement range must cover the entire temperature range from low to high.

[0061] This invention is based on an extension of Planck's formula and is particularly applicable to materials for which the emissivity is difficult to determine precisely or whose emissivity varies with temperature.

[0062] Figure 1 A flowchart of a three-band infrared thermometry method according to an example embodiment is shown.

[0063] See Figure 1 In S101, at the first wavelength, the first set of parameter values ​​for the radiation formula for the first temperature range are determined.

[0064] According to some embodiments, the temperature in different temperature ranges is calculated using a radiation formula, which is:

[0065]

[0066] In the formula, Here, λ is the radiation intensity, T is the temperature, and γ and δ are the emissivity coefficients used as parameters, with γ measured in watts per centimeter. 2 The unit of δ is centimeters per kilometer (cm·K).

[0067] The coefficients γ and δ are parameters that are related to the material composition and properties of the object, the wavelength of radiation, etc., and are also referred to as emissivity coefficients in this paper.

[0068] At a first wavelength, a first set of parameter values ​​for a first temperature range is determined using the radiation formula. The first temperature range is determined by a first temperature and a second temperature, and the first set of parameter values ​​is calculated using a first radiation intensity obtained at the first temperature and a second radiation intensity obtained at the second temperature. For example, the first temperature is 30°C, the second temperature is 100°C, and the first temperature range is 30°C to 100°C.

[0069] The first set of parameter values ​​is determined by calculating the first set of parameter values ​​using a first radiation intensity obtained at the first temperature and a second radiation intensity obtained at the second temperature. The first set of parameter values ​​are the first emissivity coefficients γ1 and δ1.

[0070] According to some embodiments, within a first temperature range of low temperature (30℃~100℃), when the measured radiation temperature of an object is 30℃, the measured radiation intensity of the object at a certain radiation wavelength is: At the same radiation wavelength, when the radiation temperature of an object is 100℃, the measured radiation intensity of the object is: Will and Substituting into the temperature measurement calculation formula, we get:

[0071]

[0072] By combining the two equations above, we can solve for the values ​​of the emissivity coefficients γ1 and δ1 at temperatures ranging from 30℃ to 100℃.

[0073] The emissivity coefficient varies with the composition, shape, radiation temperature, and wavelength of the radiating object. The first emissivity coefficient was determined using the radiation intensity and wavelength within a first temperature range. Substituting the values ​​of γ1 and δ1 into the temperature measurement formula, the relationship between the radiation intensity and temperature of an object within the low-temperature range of 30℃ to 100℃ was obtained.

[0074]

[0075] In the formula, Here, λ is the radiation intensity, T is the temperature, γ1 and δ1 are the first emissivity coefficients, and the unit of γ1 is watt-cm. 2 The unit of δ1 is centimeters·K.

[0076] In S103, at the second wavelength, a second set of parameter values ​​for the radiation formula for the second temperature range is determined.

[0077] According to some embodiments, a second temperature range is determined by a second temperature and a third temperature, and the second set of parameter values ​​is calculated by a second radiation intensity obtained at the second temperature and a third radiation intensity obtained at the third temperature. For example, the second temperature is 100°C, the third temperature is 800°C, and the second temperature range is 100°C to 800°C.

[0078] At the second wavelength, a second set of parameter values ​​for the radiation formula for the second temperature range is determined.

[0079] The second set of parameter values ​​is determined by calculating the first set of parameter values ​​using the second radiation intensity obtained at the second temperature and the third radiation intensity obtained at the third temperature. The second set of parameter values ​​are the second emissivity coefficients γ2 and δ2.

[0080] According to some embodiments, within a second temperature range of intermediate temperature (100℃~800℃), at a certain radiation wavelength, when the temperature of the radiating object is 800℃, the measured radiation intensity is as follows: Combined with the radiative temperature of the object at 100℃, the obtained Substituting into the temperature measurement calculation formula and solving the equations simultaneously, we get:

[0081]

[0082] Solve for the values ​​of emissivity coefficients γ2 and δ2 corresponding to the temperature range of 100℃ to 800℃.

[0083] The second emissivity coefficient was determined by the radiation intensity and wavelength within the second temperature range. Substituting the values ​​of γ2 and δ2 into the temperature measurement calculation formula, the corresponding relationship between the radiation intensity and temperature of an object within the medium temperature range of 100℃ to 800℃ was obtained.

[0084]

[0085] In the formula, Here, λ is the radiation intensity, T is the temperature, γ² and δ² are the second emissivity coefficients, and the unit of γ² is watt-cm². 2 The unit of δ2 is centimeters per kilometer (cm·K).

[0086] In S105, at the third wavelength, the third set of parameter values ​​for the radiation formula for the third temperature range is determined.

[0087] According to some embodiments, a third temperature range is determined by a third temperature and a fourth temperature, and the third set of parameter values ​​is calculated by a third radiation intensity obtained at the third temperature and a fourth radiation intensity obtained at the fourth temperature. For example, the third temperature is 800°C, the fourth temperature is 2500°C, and the second temperature range is 800°C to 2500°C.

[0088] At the third wavelength, a third set of parameter values ​​for the radiation formula for the third temperature range is determined.

[0089] According to some embodiments, the third set of parameter values ​​is determined by calculating the third set of parameter values ​​using the third radiation intensity and the fourth radiation intensity obtained at the fourth temperature. The third set of parameter values ​​are the third emissivity coefficients γ3 and δ3.

[0090] According to some embodiments, in the third temperature range of high temperature (800℃~2500℃), at a certain radiation wavelength, when the temperature of the radiating object is 2500℃, the measured radiation intensity is as follows: Combined with the radiative temperature of the object at 800℃, the obtained Substituting into the temperature measurement calculation formula and solving the equations simultaneously, we get:

[0091]

[0092] Solve for the values ​​of emissivity coefficients γ3 and δ3 corresponding to the temperature range of 800℃ to 2500℃.

[0093] The third emissivity coefficient was determined by the radiation intensity and wavelength within the third temperature range. Substituting the values ​​of γ3 and δ3 into the temperature measurement calculation formula, the corresponding relationship between the radiation intensity and temperature of objects in the high-temperature range of 800℃~2500℃ and above up to 3000℃ was obtained.

[0094]

[0095] In the formula, Here, λ is the radiation intensity, t is the radiation wavelength, T is the temperature, γ3 and δ3 are the third emissivity coefficients, and the unit of γ3 is watt-cm. 2 The unit of δ3 is centimeters per kilometer (cm·K).

[0096] In S107, the first set of parameter values, the second set of parameter values, and the third set of parameter values ​​are used for temperature measurement in the first temperature range, the second temperature range, and the third temperature range, respectively.

[0097] Different emissivity coefficients are set according to different temperature ranges. The temperature ranges may include a first temperature range, a second temperature range, and a third temperature range. The first set of parameter values, the second set of parameter values, and the third set of parameter values ​​include a first emissivity coefficient, a second emissivity coefficient, and a third emissivity coefficient. The first emissivity coefficient, the second emissivity coefficient, and the third emissivity coefficient correspond to the first temperature range, the second temperature range, and the third temperature range, respectively.

[0098] The first set of parameter values, the second set of parameter values, and the third set of parameter values ​​are used for temperature measurement in the first temperature range, the second temperature range, and the third temperature range, respectively. There are overlapping temperature points between adjacent temperature ranges in the first, second, and third temperature ranges, ensuring the continuity of the three-band infrared thermometry.

[0099] According to some embodiments, radiation intensity is obtained in different temperature ranges, where the first wavelength, the second wavelength, and the third wavelength are the same. That is, the obtained first radiation intensity... Second radiation intensity Third radiation intensity and fourth radiation intensity The value of λ in the equation can be a fixed value.

[0100] According to some embodiments, radiation intensity is obtained in different temperature ranges, where the first wavelength, the second wavelength, and the third wavelength are the same as each other. That is, the obtained first radiation intensity... Second radiation intensity Third radiation intensity and fourth radiation intensity The value of λ is selected differently depending on the temperature range, and is therefore variable.

[0101] The first radiation intensity and the second radiation intensity correspond to the first temperature range, the second radiation intensity and the third radiation intensity correspond to the second temperature range, and the third radiation intensity and the fourth radiation intensity correspond to the third temperature range.

[0102] In this example embodiment, the first emissivity coefficient is calculated using the first radiation intensity and the second radiation intensity. The first emissivity coefficient is applied to a first temperature range, and by solving for the first emissivity coefficient, the relationship between radiation intensity and temperature within the first temperature range can be determined.

[0103] The second emissivity coefficient is calculated using the second radiation intensity and the third radiation intensity. The second emissivity coefficient is applied to the second temperature range. Solving for the second emissivity coefficient can determine the relationship between radiation intensity and temperature within the second temperature range.

[0104] The third emissivity coefficient is calculated using the third radiation intensity and the fourth radiation intensity. The third emissivity coefficient is applied to the third temperature range. Solving for the third emissivity coefficient can determine the relationship between radiation intensity and temperature within the third temperature range.

[0105] It is easy to understand that for each temperature range, multiple sets of emissivity coefficient values ​​can be obtained using multiple temperatures and stored in a database. During actual temperature measurement, the corresponding emissivity coefficient values ​​can be retrieved from the database based on the measured temperatures and temperature changes for temperature calculations.

[0106] According to the example embodiment, in the case where the first wavelength, the second wavelength, and the third wavelength are different from each other, the first wavelength, the second wavelength, and the third wavelength can also be determined in the following manner.

[0107] A fifth, sixth, and seventh temperature are determined within the first, second, and third temperature ranges, respectively. At each of these temperatures, the wavelength is varied to obtain a first, second, and third relationship curve between radiation intensity and radiation wavelength. The wavelength corresponding to the point where the product of curvature and the rate of change of curvature is minimized on each of these curves is determined as the first wavelength, the second wavelength, and the third wavelength, respectively.

[0108] See the temperature measurement diagram for the first temperature range. Figure 2 The horizontal axis represents absolute temperature (in K), with 30℃~100℃ corresponding to absolute temperatures of 303K~373K. The vertical axis represents relative radiation intensity (in W / m²). 2 ·sr·μm).

[0109] According to some embodiments, a curve showing the relationship between radiation intensity and radiation wavelength is plotted by actual measurement within the first temperature range. A fifth temperature is determined within the first temperature range, and the wavelength is changed at this fifth temperature to obtain a first relationship curve between radiation intensity and radiation wavelength. The wavelength corresponding to the point on the first relationship curve where the product of curvature and the rate of change of curvature is minimized is determined as the first wavelength.

[0110] See the temperature measurement diagram for the second temperature range. Figure 3 The horizontal axis represents absolute temperature (in K), with 100℃~800℃ corresponding to absolute temperatures of 373K~1073K. The vertical axis represents relative radiation intensity (in W / m²). 2 ·sr·μm).

[0111] According to some embodiments, a curve showing the relationship between radiation intensity and radiation wavelength is plotted by actual measurement within the second temperature range. A sixth temperature is determined within the second temperature range, and the wavelength is changed at this sixth temperature to obtain a second curve showing the relationship between radiation intensity and radiation wavelength. The wavelength corresponding to the point on the second curve where the product of curvature and the rate of change of curvature is minimized is determined as the second wavelength.

[0112] See the temperature measurement diagram for the third temperature range. Figure 4 The horizontal axis represents absolute temperature (in K), with 800℃~3000℃ corresponding to absolute temperatures of 1073K~3273K. The vertical axis represents relative radiation intensity (in W / m²). 2 ·sr·μm).

[0113] According to some embodiments, a curve showing the relationship between radiation intensity and radiation wavelength is plotted by actual measurement within the third temperature range. A seventh temperature is determined within the third temperature range, and the wavelength is changed at this seventh temperature to obtain a third relationship curve between radiation intensity and radiation wavelength. The wavelength corresponding to the point on the third relationship curve where the product of curvature and the rate of change of curvature is minimized is determined as the third wavelength.

[0114] See Figure 5 A graph showing the absolute temperature and relative radiation intensity across the entire temperature range. Integrating the first temperature range (30℃~100℃), the second temperature range (100℃~800℃), and the third temperature range (800℃~2500℃ and above), along with the first emissivity coefficient γ1δ1, the second emissivity coefficient γ2δ2, and the third emissivity coefficient γ3δ3, the radiation characteristics of the corresponding three temperature ranges are presented.

[0115] The radiation intensity transitions smoothly across the three temperature ranges, without any abrupt changes, inflection points, or discontinuities. This invention's temperature measurement method, by setting different emissivity coefficients and selecting appropriate coefficients for different temperature ranges, enables continuous temperature measurement at low, medium, and high temperatures.

[0116] High-precision measurements were achieved over a wide temperature range, with an accuracy of 1‰. The variation in radiation intensity was on the order of magnitude at low temperatures, three orders of magnitude at medium temperatures, and two orders of magnitude at high temperatures. The total variation in radiation intensity across the entire measurement range was on the order of magnitude six, meeting the requirements for high-precision automated temperature control.

[0117] The solved formula can effectively utilize infrared radiation characteristics to accurately measure the state of various materials at different temperatures, achieving more accurate temperature measurement. Table 1 shows the measured results of the thermometer according to the technical solution of the present invention.

[0118] Table 1

[0119] Standard temperature point / °C Measured output value / ℃ Inherent error Expanded uncertainty U / C (k=2) 1400 1399.9 -0.1 2.8 1450 1451.6 1.6 3.0 1500 1502.2 2.2 3.2

[0120] As can be seen from this table, the measured output values ​​are very close to the temperature values ​​at the standard temperature point, with an expanded uncertainty between 2.8 and 3.2, indicating high reliability of the measurement results. The technical solution of this invention offers excellent measurement accuracy, a performance crucial for industrial applications requiring precise temperature control.

[0121] Figure 6 A schematic diagram of a three-band infrared temperature measurement system according to an example embodiment is shown.

[0122] According to an example embodiment, the three-band infrared temperature measurement system includes a sensor assembly 101, a computing unit 103, and a storage unit 105. The sensor assembly 101 is used to measure radiation intensity, the computing unit 103 is used to receive radiation intensity data from the sensor assembly 101, and the storage unit 105 is communicatively connected to the computing unit 103, and is used to store the radiation intensity of the sensor assembly 101 and the temperature calculation results of the computing unit 103.

[0123] The sensor assembly 101 consists of a photoelectric converter and an analog-to-digital converter. The photoelectric converter monitors the temperature distribution of the furnace body, and the radiation intensity is directly received by the photoelectric converter and converted into an electrical signal. The analog-to-digital converter processes and converts the electrical signal from the photoelectric converter, transforming the analog signal generated by the photoelectric converter into a more easily processed form.

[0124] According to the example embodiment, the calculation unit calculates the three-band temperature using the temperature measurement calculation formula:

[0125]

[0126] In the formula, φ(λ, T) is the radiation intensity, λ is the radiation wavelength, T is the temperature, γ and δ are the emissivity coefficients, and the unit of γ is watt-cm. 2 The unit of δ is centimeters per kilometer (cm·K).

[0127] The coefficients γ and δ are determined based on the temperature measurement range.

[0128] Different emissivity coefficients are set according to different temperature ranges. The temperature ranges may include a first temperature range, a second temperature range, and a third temperature range, and the emissivity coefficients may include a first emissivity coefficient, a second emissivity coefficient, and a third emissivity coefficient. The first emissivity coefficient, the second emissivity coefficient, and the third emissivity coefficient correspond to the first temperature range, the second temperature range, and the third temperature range, respectively.

[0129] The first emissivity coefficient is calculated using the first radiation intensity and the second radiation intensity. The first emissivity coefficient is applied to a first temperature range. Solving for the first emissivity coefficient can determine the relationship between radiation intensity and temperature within the first temperature range.

[0130] The second emissivity coefficient is calculated using the second radiation intensity and the third radiation intensity. The second emissivity coefficient is applied to the second temperature range. Solving for the second emissivity coefficient can determine the relationship between radiation intensity and temperature within the second temperature range.

[0131] The third emissivity coefficient is calculated using the third radiation intensity and the fourth radiation intensity. The third emissivity coefficient is applied to the third temperature range. Solving for the third emissivity coefficient can determine the relationship between radiation intensity and temperature within the third temperature range.

[0132] By integrating the solved first emissivity coefficient γ1δ1, second emissivity coefficient γ2δ2, and third emissivity coefficient γ3δ3, the temperature can be measured across the entire temperature range. This invention effectively utilizes the infrared radiation characteristics to accurately measure the state of various materials at different temperatures by using different emissivity coefficients in the formula, achieving more accurate temperature measurement.

[0133] Using the system of this invention, the detection distance can be varied from 0.5 meters to 25 meters, and the temperature of transparent and semi-transparent objects can be measured.

[0134] The three-band temperature system proposed in this invention can be applied to temperature monitoring methods in semiconductor manufacturing or sintering processes. The three-band temperature measurement system can cover temperatures from low to high, achieving temperature measurement of different temperature ranges in one device and improving temperature measurement accuracy.

[0135] Figure 7 A block diagram of a computing device according to an exemplary embodiment is shown.

[0136] like Figure 7 As shown, the computing device 30 includes a processor 12 and a memory 14. The computing device 30 may also include a bus 22, a network interface 16, and an I / O interface 18. The processor 12, memory 14, network interface 16, and I / O interface 18 can communicate with each other via the bus 22.

[0137] Processor 12 may include one or more general-purpose CPUs (Central Processing Units), microprocessors, or application-specific integrated circuits, for executing relevant program instructions. According to some embodiments, computing device 30 may also include a high-performance display adapter (GPU) 20 for accelerating processor 12.

[0138] Memory 14 may include a machine-readable medium in the form of volatile memory, such as random access memory (RAM), read-only memory (ROM), and / or cache memory. Memory 14 is used to store one or more programs containing instructions, as well as data. Processor 12 may read the instructions stored in memory 14 to perform the methods described above according to embodiments of the present invention.

[0139] The computing device 30 can also communicate with one or more networks via the network interface 16. The network interface 16 can be a wireless network interface.

[0140] Bus 22 can include address bus, data bus, control bus, etc. Bus 22 provides a path for exchanging information between components.

[0141] It should be noted that, in specific implementations, the computing device 30 may also include other components necessary for normal operation. Furthermore, those skilled in the art will understand that the device described above may only include the components necessary for implementing the embodiments of this specification, and not necessarily all the components shown in the figures.

[0142] The present invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the above-described method. The computer-readable storage medium may include, but is not limited to, any type of disk, including floppy disks, optical disks, DVDs, CD-ROMs, microdrives, as well as magneto-optical disks, ROMs, RAMs, EPROMs, EEPROMs, DRAMs, VRAMs, flash memory devices, magnetic cards or optical cards, nanosystems (including molecular memory ICs), network storage devices, cloud storage devices, or any type of medium or device suitable for storing instructions and / or data.

[0143] This invention also provides a computer program product comprising a non-transitory computer-readable storage medium storing a computer program operable to cause a computer to perform some or all of the steps of any of the methods described in the above method embodiments.

[0144] Those skilled in the art will clearly understand that the technical solutions of the present invention can be implemented by means of software and / or hardware. In this specification, "unit" and "module" refer to software and / or hardware capable of independently performing or cooperating with other components to perform a specific function, wherein the hardware may be, for example, a field-programmable gate array (FPGA), an integrated circuit, etc.

[0145] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that the present invention is not limited to the described order of actions, because according to the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to the present invention.

[0146] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0147] In the several embodiments provided by this invention, it should be understood that the disclosed apparatus can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some service interface; the indirect coupling or communication connection between devices or units may be electrical or other forms.

[0148] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0149] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0150] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage device. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of the present invention.

[0151] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0152] Exemplary embodiments of the present invention have been specifically shown and described above. It should be understood that the present invention is not limited to the detailed structures, arrangements, or implementations described herein; rather, the present invention is intended to cover various modifications and equivalent arrangements contained within the spirit and scope of the appended provisions.

Claims

1. A method of three-band infrared temperature measurement, characterized by, The method comprises: determining a first set of parameter values of a radiation formula for a first temperature interval at a first wavelength; determining a second set of parameter values of the radiation formula for a second temperature interval at a second wavelength; determining a third set of parameter values of the radiation formula for a third temperature interval at a third wavelength; using the first set of parameter values, the second set of parameter values and the third set of parameter values for temperature measurement of the first temperature interval, the second temperature interval and the third temperature interval respectively; determining the first temperature interval, the second temperature interval and the third temperature interval by a first temperature, a second temperature, a third temperature and a fourth temperature; determining the first wavelength, the second wavelength and the third wavelength by: determining a fifth temperature, a sixth temperature and a seventh temperature in the first temperature interval, the second temperature interval and the third temperature interval respectively; obtaining a first relationship curve, a second relationship curve and a third relationship curve of radiation intensity and radiation wavelength by changing the wavelength at the fifth temperature, the sixth temperature and the seventh temperature respectively; determining the first wavelength, the second wavelength and the third wavelength as the wavelengths corresponding to the points with the minimum product of curvature and rate of change of curvature on the first relationship curve, the second relationship curve and the third relationship curve respectively.

2. The method of claim 1, wherein, The radiation formula is: φ(λ, T) = γλ -5 (exp ( δ / λT ) - 1) -1 In the formula, φ(λ, T) is the radiation intensity, λ is the radiation wavelength, T is the temperature value, γ and δ are the radiation rate coefficients as parameters, the unit of γ is watt•centimeter 2 , and the unit of δ is centimeter•K.

3. The method of claim 2, wherein, The first set of parameter values, the second set of parameter values and the third set of parameter values are determined by: calculating the first set of parameter values by a first radiation intensity obtained at the first temperature and a second radiation intensity obtained at the second temperature; calculating the second set of parameter values by the second radiation intensity and a third radiation intensity obtained at the third temperature; calculating the third set of parameter values by the third radiation intensity and a fourth radiation intensity obtained at the fourth temperature.

4. The method of claim 1, wherein, The first temperature interval is 30℃-100℃, the second temperature interval is 100℃-800℃, and the third temperature interval is 800℃-2500℃.

5. A method of temperature monitoring of a semiconductor process or sintering process, characterized in that The method comprises:

6. A computing device, comprising: a processor; and a memory storing a computer program, which, when executed by the processor, causes the processor to execute the method according to any one of claims 1-4. The method comprises: a processor; and a memory storing a computer program, which, when executed by the processor, causes the processor to execute the method according to any one of claims 1-4.

Images