Magnetic sensor device

Abstract

This magnetic field generator is configured so as to generate a magnetic field to be applied to a magnetic sensor. A conductor layer of the magnetic field generator includes a first end, a second end, a plurality of main wirings, a first sub-wiring, and a second sub-wiring. The first sub-wiring includes a plurality of first paths from the first end to each of the plurality of main wirings 31 via the plurality of first connection portions. The second sub-wiring includes a plurality of second paths from the second end to each of the plurality of main wiring via the plurality of second connection portions. The number of the first connecting parts passed by any two first paths is the same. Any two second paths pass through the same number of the plurality of second connecting parts.

Description

Technical Field

[0001] The present invention relates to a magnetic sensor device including a magnetic field generator. Background Art

[0002] In recent years, magnetic sensors have been used for various purposes. As a magnetic sensor, a magnetic sensor using a spin valve type magnetoresistive effect element is known. The spin valve type magnetoresistive effect element has: a magnetization fixed layer having magnetization with a fixed direction; a free layer having magnetization whose direction can change according to the direction of the applied magnetic field; and a gap layer arranged between the magnetization fixed layer and the free layer.

[0003] In a spin valve type magnetoresistive effect element, the resistance value changes according to the angle between the magnetization direction of the free layer and the magnetization direction of the magnetization fixed layer. When the angle is 0°, the resistance value is the minimum value, and when the angle is 180°, the resistance value is the maximum value. In order to improve the detection accuracy of the magnetic sensor, it is preferred to align the magnetization direction of the free layer before using the magnetic sensor.

[0004] In Chinese Patent Application Publication No. 112946538A, a current detection device and a magnetic field detection device are disclosed. The current detection device and the magnetic field detection device are respectively provided with a magnetoresistance effect element and a coil. In these devices, a magnetic field is generated around the coil by supplying a current to the coil. The generated magnetic field is used to make the magnetization direction of the magnetization free layer of the magnetoresistance effect element face a predetermined direction.

[0005] The magnetic sensor is composed of a plurality of magnetoresistance effect elements. When a magnetic field generator such as a coil is used to apply a magnetic field to the plurality of magnetoresistance effect elements, it is preferable to apply a uniform magnetic field to each of the plurality of magnetoresistance effect elements. Therefore, it is preferable that the current density in the conductor constituting the magnetic field generator is uniform. Summary of the invention

[0006] An object of the present invention is to provide a magnetic sensor device including a magnetic sensor and a magnetic field generator, wherein a uniform magnetic field can be applied to the magnetic sensor by the magnetic field generator.

[0007] The magnetic sensor device of the present invention comprises: a magnetic sensor, and a magnetic field generator configured to generate a magnetic field applied to the magnetic sensor. The magnetic field generator of the present invention is configured to generate a magnetic field for inspection applied to the magnetic sensor. The magnetic field generator includes a conductor layer composed of a conductive material. The conductor layer includes: a first end; a second end; a plurality of main wirings, which are used to generate a magnetic field and are arranged between the first end and the second end and separated from each other; a first sub-wiring, which electrically connects the first end and the plurality of main wirings; and a second sub-wiring, which electrically connects the second end and the plurality of main wirings.

[0008] The first sub-wiring includes a plurality of first paths from the first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths from the second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first connecting portions branched from the first sub-wiring. Each of the plurality of second paths passes through a plurality of second connecting portions branched from the second sub-wiring. Any two of the plurality of first paths pass through the same number of first connecting portions. Any two of the plurality of second paths pass through the same number of second connecting portions.

[0009] In the magnetic sensor device and the magnetic field generator of the present invention, any two of the plurality of first paths pass through the same number of first connecting parts, and any two of the plurality of second paths pass through the same number of second connecting parts. Thus, according to the present invention, a uniform magnetic field can be applied to the magnetic sensor by the magnetic field generator.

[0010] Other objects, features and advantages of the present invention will become more apparent from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a perspective view showing the magnetic sensor system according to the first embodiment of the present invention.

[0012] Figure 2 It is a perspective view showing the magnetic sensor device according to the first embodiment of the present invention.

[0013] Figure 3 This is a functional block diagram showing the structure of the magnetic sensor device according to the first embodiment of the present invention.

[0014] Figure 4 : is a circuit diagram showing the circuit configuration of the magnetic sensor according to the first embodiment of the present invention.

[0015] Figure 5 It is a perspective view showing a part of one resistor portion according to the first embodiment of the present invention.

[0016] Figure 6 It is a perspective view showing a magnetoresistance effect element according to the first embodiment of the present invention.

[0017] Figure 7 It is a plan view showing the first electronic component according to the first embodiment of the present invention.

[0018] Figure 8 It is a cross-sectional view showing a first electronic component according to a first embodiment of the present invention.

[0019] Fig. 9 It is a plan view showing the first conductor layer according to the first embodiment of the present invention.

[0020] Fig.10 It is a plan view showing the second conductor layer according to the first embodiment of the present invention.

[0021] Fig.11 It is a plan view showing a part of the conductor layer in an enlarged manner according to the first embodiment of the present invention.

[0022] Fig.12 It is a plan view showing another part of the conductor layer in the first embodiment of the present invention in an enlarged manner.

[0023] Fig.13 It is a plan view showing a conductor layer according to a first modification example of the first embodiment of the present invention.

[0024] Fig.14 It is a plan view showing a conductor layer according to a second modified example of the first embodiment of the present invention.

[0025] Fig.15 It is a plan view showing a conductor layer according to a third modified example of the first embodiment of the present invention.

[0026] Fig.16 It is a cross-sectional view showing an electronic component according to a second embodiment of the present invention.

[0027] Fig.17 : is a circuit diagram showing the circuit configuration of a magnetic sensor according to a third embodiment of the present invention.

[0028] Fig.18 It is a plan view showing a part of the first conductive layer according to the third embodiment of the present invention.

[0029] Fig.19 It is a plan view showing a part of the second conductive layer according to the third embodiment of the present invention.

[0030] Fig. 20 It is a cross-sectional view showing an electronic component according to a fourth embodiment of the present invention.

[0031] Fig.21 It is a perspective view showing the structure of a current sensor system according to a fifth embodiment of the present invention.

[0032] Fig. 22 It is a cross-sectional view showing a magnetic sensor device according to a fifth embodiment of the present invention.

[0033] Fig.23 : is a block diagram showing the configuration of a current sensor system according to a fifth embodiment of the present invention.

[0034] Fig.24 : is a circuit diagram showing a circuit configuration of a magnetic sensor according to a fifth embodiment of the present invention. DETAILED DESCRIPTION

[0035] [First embodiment]

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Figure 1 , a schematic configuration of a magnetic sensor system including a magnetic sensor device according to a first embodiment of the present invention will be described. Figure 1 1 is a perspective view showing a magnetic sensor system 100 of this embodiment. The magnetic sensor system 100 of this embodiment includes the magnetic sensor device 1 of this embodiment and a magnetic field generator 101. The magnetic field generator 101 generates a target magnetic field MF which is a magnetic field to be detected by the magnetic sensor device 1.

[0037] The magnetic field generator 101 of this embodiment is a cylindrical magnet. The magnetic field generator 101 has an N pole and an S pole symmetrically arranged around a virtual plane including the central axis of the cylinder. The magnetic field generator 101 rotates around the central axis of the cylinder. Thus, the direction of the target magnetic field MF generated by the magnetic field generator 101 rotates around the rotation axis C including the central axis of the cylinder.

[0038] The magnetic sensor device 1 is arranged at a position capable of detecting the target magnetic field MF at a predetermined reference position PR. The reference position PR may be on the rotation axis C. In the following description, the reference position PR is on the rotation axis C. The magnetic sensor device 1 detects the target magnetic field MF generated by the magnetic field generator 101 and generates at least one detection signal. The at least one detection signal has a corresponding relationship with the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1, in particular, the rotation position of the magnetic field generator 101.

[0039] Here, a virtual plane parallel to one end face of the magnetic field generator 101, that is, a virtual plane including the reference position PR, is referred to as a reference plane. In the reference plane, the direction of the object magnetic field MF rotates around the reference position PR. The reference direction is located in the reference plane and intersects with the reference position PR. In the following description, the direction of the object magnetic field MF at the reference position PR refers to the direction located in the reference plane. The magnetic sensor device 1 is configured to generate an angle detection value θs having a corresponding relationship with the direction of the object magnetic field MF at the reference position PR.

[0040] Next, refer to Figure 2 and Figure 3 , the structure of the magnetic sensor device 1 is described. Figure 2 It is a perspective view showing the magnetic sensor device 1 . Figure 3 is a functional block diagram showing the structure of the magnetic sensor device 1. Figure 2 and Figure 3As shown, the magnetic sensor device 1 includes: a magnetic field MF (see Figure 1 ) and generates at least one detection signal, a magnetic field generator 3 configured to generate a magnetic field applied to the magnetic sensor 2, and a processor 4 configured to generate an angle detection value θs based on the at least one detection signal. The processor 4 is composed of, for example, an application specific integrated circuit (ASIC).

[0041] In the present embodiment, the magnetic field generator 3 and the processor 4 are integrated into one electronic component. The magnetic sensor 2 is configured as an electronic component separate from the magnetic field generator 3 and the processor 4. Hereinafter, the electronic component including the magnetic sensor 2 is referred to as the first electronic component 5, and the electronic component including the magnetic field generator 3 and the processor 4 is referred to as the second electronic component 6. The magnetic sensor device 1 may also include the first electronic component 5 and the second electronic component 6.

[0042] The first and second electronic components 5 and 6 are in the form of rectangular parallelepiped chips, respectively. The first electronic component 5 has an upper surface 5a and a lower surface 5b located on opposite sides, and four side surfaces connecting the upper surface 5a and the lower surface 5b. The second electronic component 6 includes an upper surface 6a and a lower surface 6b located on opposite sides, and four side surfaces connecting the upper surface 6a and the lower surface 6b. The first electronic component 5 is mounted on the upper surface 6a of the second electronic component 6 in a posture where the lower surface 5b of the first electronic component 5 is opposite to the upper surface 6a of the second electronic component 6. The first electronic component 5 is bonded to the second electronic component 6, for example, by an adhesive.

[0043] In the second electronic component 6 , the magnetic field generator 3 is stacked on the processor 4 . In a state where the first electronic component 5 is mounted on the second electronic component 6 , the magnetic field generator 3 is arranged between the magnetic sensor 2 and the processor 4 .

[0044] Here, if Figure 2 As shown, the X direction, the Y direction, and the Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In the present embodiment, the direction perpendicular to the upper surface 5a of the first electronic component 5, that is, the direction from the lower surface 5b of the first electronic component 5 toward the upper surface 5a is set as the Z direction. In addition, the direction opposite to the X direction is set as the -X direction, the direction opposite to the Y direction is set as the -Y direction, and the direction opposite to the Z direction is set as the -Z direction. It can be said that the magnetic sensor 2 and the magnetic field generator 3 are stacked in a direction parallel to the Z direction.

[0045] Hereinafter, the position at the front end in the Z direction relative to the reference position is referred to as "upper", and the position at the opposite side of the "upper" relative to the reference position is referred to as "lower". In addition, regarding the components of the magnetic sensor device 1, the surface located at one end in the Z direction is referred to as the "upper surface", and the surface located at one end in the -Z direction is referred to as the "lower surface". In addition, the expression "when viewed from the Z direction" means that the object is viewed from a position away from the Z direction.

[0046] The first electronic component 5 has a plurality of first pads (electrode pads) provided on the upper surface 5a. The second electronic component 6 has a plurality of second pads (electrode pads) provided on the upper surface 6a. In the magnetic sensor device 1, corresponding two pads among the plurality of first pads and the plurality of second pads are connected to each other by bonding wires.

[0047] The magnetic sensor 2 includes a first detection circuit 10 and a second detection circuit 20. The first and second detection circuits 10 and 20 are connected to the processor 4 via a plurality of first pads, a plurality of second pads, and a plurality of bonding wires.

[0048] Each of the first and second detection circuits 10 and 20 includes a plurality of magnetic detection elements. In the present embodiment, in particular, the plurality of magnetic detection elements are a plurality of magnetoresistance effect elements. Hereinafter, the magnetoresistance effect element is referred to as an MR element.

[0049] The first detection circuit 10 detects a component of the first direction of the object magnetic field MF and generates at least one first detection signal corresponding to the component. The second detection circuit 20 detects a component of the second direction of the object magnetic field MF and generates at least one second detection signal corresponding to the component. In this embodiment, in particular, the first direction is a direction parallel to the X direction, and the second direction is a direction parallel to the Y direction.

[0050] The processor 4 is configured to generate an angle detection value θs based on at least one first detection signal and at least one second detection signal.

[0051] The magnetic field generator 3 is configured to generate a first magnetic field and a second magnetic field. A driving current for generating the first magnetic field and the second magnetic field is supplied to the magnetic field generator 3 from the processor 4. The driving current may be a direct current or an alternating current. When a direct current is supplied to the magnetic field generator 3, the directions and intensities of the first and second magnetic fields are constant. When an alternating current is supplied to the magnetic field generator 3, the directions and intensities of the first and second magnetic fields change periodically.

[0052] The first magnetic field includes a first magnetic field component applied to the first detection circuit 10. The second magnetic field includes a second magnetic field component applied to the second detection circuit 20. The direction of the first magnetic field component is a direction parallel to the first direction, that is, the X direction or the -X direction. The direction of the second magnetic field component is a direction parallel to the second direction, that is, the Y direction or the -Y direction. The operation of the magnetic field generator 3 is controlled by, for example, the processor 4.

[0053] The first magnetic field can also be used, for example, to measure the sensitivity of the first detection circuit 10. Specifically, for example, the sensitivity of the first detection circuit 10 is measured by measuring the size of at least one first detection signal while changing the strength of the first magnetic field. In addition, the second magnetic field can also be used, for example, to measure the sensitivity of the second detection circuit 20. Specifically, for example, the sensitivity of the second detection circuit 20 is measured by measuring the size of at least one second detection signal while changing the strength of the second magnetic field.

[0054] Next, refer to Figure 4 , the circuit structure of the magnetic sensor 2 is described. Figure 4 : is a circuit diagram showing the circuit configuration of the magnetic sensor 2 .

[0055] The first detection circuit 10 includes: four resistors R11, R12, R13, R14, a power port V1, a ground port G1, and two output ports E11 and E12. The resistor R11 is arranged between the power port V1 and the output port E11. The resistor R12 is arranged between the output port E11 and the ground port G1. The resistor R13 is arranged between the output port E12 and the ground port G1. The resistor R14 is arranged between the power port V1 and the output port E12. A voltage or current of a predetermined magnitude is applied to the power port V1. The ground port G1 is grounded.

[0056] The second detection circuit 20 includes four resistors R21, R22, R23, and R24, a power port V2, a ground port G2, and two output ports E21 and E22. The resistor R21 is arranged between the power port V2 and the output port E21. The resistor R22 is arranged between the output port E21 and the ground port G2. The resistor R23 is arranged between the output port E22 and the ground port G2. The resistor R24 ​​is arranged between the power port V2 and the output port E22. A voltage or current of a specified magnitude is applied to the power port V2. The ground port G2 is grounded.

[0057] Here, refer to Figure 5 and Figure 6 Next, the resistors R11 to R14 and R21 to R24 will be described. Each of the resistors R11 to R14 and R21 to R24 includes a plurality of MR elements 50 . Figure 5It is a perspective view showing a part of one resistor portion among the resistor portions R21 to R24. Figure 6 It is a perspective view showing the MR element 50 .

[0058] Each of the resistors R11 to R14 and R21 to R24 further includes a plurality of lower electrodes 61 and a plurality of upper electrodes 62. Each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 in the longitudinal direction of the lower electrodes 61. Figure 5 As shown in FIG. 1 , MR elements 50 are arranged near both ends in the long-side direction on the upper surface of the lower electrode 61. A plurality of upper electrodes 62 are arranged on the plurality of MR elements 50. Each upper electrode 62 has an elongated shape, is arranged on two adjacent lower electrodes 61 in the long-side direction of the lower electrode 61, and electrically connects the two adjacent MR elements 50. With this structure, each of the resistors R11 to R14 and R21 to R24 includes a plurality of MR elements 50 connected in series via a plurality of lower electrodes 61 and a plurality of upper electrodes 62.

[0059] In the present embodiment, each of the plurality of MR elements 50 is a spin valve type MR element. The spin valve type MR element includes: a magnetization fixed layer 52 having magnetization whose direction is fixed, a free layer 54 having magnetization whose direction can be changed according to the direction of the target magnetic field MF, and a gap layer 53 arranged between the magnetization fixed layer 52 and the free layer 54. The spin valve type MR element can also be a TMR (tunnel magnetoresistance effect) element or a GMR (giant magnetoresistance effect) element. In the TMR element, the gap layer 53 is a tunnel barrier layer. In the GMR element, the gap layer 53 is a non-magnetic conductive layer. In the spin valve type MR element, the resistance value changes according to the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetization fixed layer 52. When the angle is 0°, the resistance value becomes the minimum value, and when the angle is 180°, the resistance value becomes the maximum value. In each MR element 50 , the free layer 54 has shape anisotropy in which the easy magnetization axis direction is orthogonal to the magnetization direction of the magnetization fixed layer 52 .

[0060] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer 54 are stacked in this order from the lower electrode 61 side. Figure 6The configuration shown is reversed up and down. The antiferromagnetic layer 51 is made of an antiferromagnetic material, generates exchange coupling with the magnetization fixed layer 52, and fixes the magnetization direction of the magnetization fixed layer 52. In addition, the magnetization fixed layer 52 can also be a so-called self-pinning type fixed layer (Synthetic Ferri Pinned layer, SFP layer). The self-pinning type fixed layer has a stacked ferrite structure in which a ferromagnetic layer, a non-magnetic intermediate layer and a ferromagnetic layer are stacked, so that the two ferromagnetic layers are antiferromagnetically coupled. In the case where the magnetization fixed layer 52 is a self-pinning type fixed layer, the antiferromagnetic layer 51 can also be omitted.

[0061] exist Figure 4 In FIG. 1 , the solid arrows indicate the magnetization directions of the magnetization fixed layers 52 of the resistors R11 to R14 and R21 to R24. Figure 4 In the example shown, the magnetization direction of the magnetization fixed layer 52 of each resistor R11 and R13 is in the X direction. The magnetization direction of the magnetization fixed layer 52 of each resistor R12 and R14 is in the -X direction. The free layer 54 of each resistor R11 to R14 has shape anisotropy in which the easy magnetization axis direction is parallel to the Y direction.

[0062] The magnetization direction of the magnetization fixed layer 52 of each resistor R21 and R23 is the Y direction. The magnetization direction of the magnetization fixed layer 52 of each resistor R22 and R24 is the -Y direction. The free layer 54 of each resistor R21 to R24 has shape anisotropy with the easy magnetization axis direction being parallel to the X direction.

[0063] In the first detection circuit 10, according to the intensity of the component of the first direction (direction parallel to the X direction) of the object magnetic field MF, the potential of the connection point of the resistors R11 and R12, that is, the potential of the output port E11, and the potential of the connection point of the resistors R13 and R14, that is, the potential of the output port E12 change. The first detection circuit 10 may also generate a signal corresponding to the potential of the output port E11 and a signal corresponding to the potential of the output port E12 as first detection signals, respectively. Alternatively, the first detection circuit 10 may also generate a signal corresponding to the potential difference between the output ports E11 and E12 as a first detection signal. In this case, the first detection circuit 10 may also further include: a differential amplifier (differential detector) that outputs a signal corresponding to the potential difference between the output ports E11 and E12 as a first detection signal.

[0064] In the second detection circuit 20, according to the intensity of the component of the second direction (direction parallel to the Y direction) of the object magnetic field MF, the potential of the connection point of the resistors R21 and R22, that is, the potential of the output port E21, and the potential of the connection point of the resistors R23 and R24, that is, the potential of the output port E22 change. The second detection circuit 20 may also generate a signal corresponding to the potential of the output port E21 and a signal corresponding to the potential of the output port E22 as a second detection signal. Alternatively, the second detection circuit 20 may also generate a signal corresponding to the potential difference between the output ports E21 and E22 as a second detection signal. In this case, the second detection circuit 20 may also further include: a differential amplifier that outputs a signal corresponding to the potential difference between the output ports E21 and E22 as a second detection signal.

[0065] Here, a method for generating the angle detection value θs is described. First, the following case is described, that is, the first detection circuit 10 generates a signal corresponding to the potential of the output port E11 and a signal corresponding to the potential of the output port E12 as first detection signals, and the second detection circuit 20 generates a signal corresponding to the potential of the output port E21 and a signal corresponding to the potential of the output port E22 as second detection signals. The processor 4 first generates the first signal S1 by an operation including obtaining the difference between the two first detection signals, and generates the second signal S2 by an operation including obtaining the difference between the two second detection signals. The processor 4 can also be configured to be able to correct the amplitude, phase and offset of each of the first and second signals S1 and S2.

[0066] Next, the processor 4 calculates the angle detection value θs within a range of 0° or more and less than 360°, for example, using the following equation (1). Note that “atan” represents arc tangent.

[0067] θs=atan(S2 / S1)…(1)

[0068] Next, the following case is described, that is, the first detection circuit 10 generates a signal corresponding to the potential difference between the output ports E11 and E12 as a first detection signal, and the second detection circuit 20 generates a signal corresponding to the potential difference between the output ports E21 and E22 as a second detection signal. In this case, the processor 4 obtains the signal corresponding to the first detection signal as the first signal S1, and obtains the signal corresponding to the second detection signal as the second signal S2. The processor 4 may also obtain the first and second detection signals as the first and second signals S1 and S2, or may obtain two signals that correct at least one of the amplitude, phase and offset of the first and second detection signals as the first and second signals S1 and S2. Next, the processor 4 calculates the angle detection value θs within the range of greater than 0° and less than 360° through formula (1).

[0069] Next, refer to Figure 7 and Figure 8 , the structure of the first electronic component 5 is described. Figure 7 It is a plan view showing the first electronic component 5 . Figure 8 It is a cross-sectional view showing the first electronic component 5 .

[0070] exist Figure 7 In FIG. 1 , a rectangular region marked with reference numeral A10 indicates a region where a plurality of MR elements 50 constituting the resistors R11 to R14 of the first detection circuit 10 are arranged. In addition, a rectangular region marked with reference numeral A20 indicates a region where a plurality of MR elements 50 constituting the resistors R21 to R24 of the second detection circuit 20 are arranged. Figure 7 In the example shown, the regions A10 and A20 are arranged in sequence along the X direction. Alternatively, the regions A10 and A20 may be arranged along the Y direction. Alternatively, at least one of the regions A10 and A20 may include a plurality of partial regions arranged at positions separated from each other.

[0071] Here, the plurality of MR elements 50 constituting the resistors R11 to R14 of the first detection circuit 10 are denoted by reference numeral 50A, the plurality of lower electrodes 61 connected to the plurality of MR elements 50A are denoted by reference numeral 61A, and the plurality of upper electrodes 62 connected to the plurality of MR elements 50A are denoted by reference numeral 62A. In addition, the plurality of MR elements 50 constituting the resistors R21 to R24 of the second detection circuit 20 are denoted by reference numeral 50B, the plurality of lower electrodes 61 connected to the plurality of MR elements 50B are denoted by reference numeral 61B, and the plurality of upper electrodes 62 connected to the plurality of MR elements 50B are denoted by reference numeral 62B. The first electronic component 5 includes a plurality of MR elements 50A, a plurality of MR elements 50B, a plurality of lower electrodes 61A, a plurality of lower electrodes 61B, a plurality of upper electrodes 62A, and a plurality of upper electrodes 62B.

[0072] The first electronic component 5 further includes: a substrate 41, and insulating layers 42, 43, 44, 45, and 46. The insulating layer 42 is arranged on the substrate 41. A plurality of lower electrodes 61A and a plurality of lower electrodes 61B are arranged on the insulating layer 42. The insulating layer 43 is arranged on the insulating layer 42 around the plurality of lower electrodes 61A and around the plurality of lower electrodes 61B. A plurality of MR elements 50A are arranged on the plurality of lower electrodes 61A. A plurality of MR elements 50B are arranged on the plurality of lower electrodes 61B. The insulating layer 44 is arranged on the insulating layer 43, the plurality of lower electrodes 61A, and the plurality of lower electrodes 61B, around the plurality of MR elements 50A and around the plurality of MR elements 50B.

[0073] The plurality of upper electrodes 62A are disposed on the insulating layer 44 and the plurality of MR elements 50A. The plurality of upper electrodes 62B are disposed on the insulating layer 44 and the plurality of MR elements 50B. The insulating layer 45 is disposed on the insulating layer 44 around the plurality of upper electrodes 62A and around the plurality of upper electrodes 62B. The insulating layer 46 is disposed on the insulating layer 45, the plurality of upper electrodes 62A, and the plurality of upper electrodes 62B.

[0074] Next, refer to Fig. 9 and Fig.10 , the magnetic field generator 3 is described. Fig. 9 It is a top view showing the first conductor layer of this embodiment. Fig.10 It is a top view showing the second conductor layer of this embodiment.

[0075] The magnetic field generator 3 includes a first conductor layer 30A and a second conductor layer 30B each made of a conductive material such as Cu, Au or Al. The first conductor layer 30A is configured to generate a first magnetic field including a first magnetic field component applied to the first detection circuit 10. The second conductor layer 30B is configured to generate a second magnetic field including a second magnetic field component applied to the second detection circuit 20.

[0076] like Fig. 9 As shown, the first conductor layer 30A includes: a first end 30Aa, a second end 30Ab, a plurality of main wirings 31A disposed between the first end 30Aa and the second end 30Ab and separated from each other, a first sub-wiring 32A electrically connecting the first end 30Aa and the plurality of main wirings 31A, and a second sub-wiring 33A electrically connecting the second end 30Ab and the plurality of main wirings 31A. The first end 30Aa and the second end 30Ab are respectively connected to the processor 4 (refer to Figure 3 )connect.

[0077] The region A10 in which the plurality of MR elements 50A constituting the resistors R11 to R14 of the first detection circuit 10 are arranged overlaps with the plurality of main wirings 31A when viewed from the Z direction. In addition, the region A10 is arranged between the first sub-wiring 32A and the second sub-wiring 33A when viewed from the Z direction. That is, the plurality of MR elements 50A may also be arranged between the first sub-wiring 32A and the second sub-wiring 33A when viewed from the Z direction. In the region A10, the intensity of the first magnetic field component is the same or substantially the same. Therefore, the intensity of the first magnetic field component applied to each of the plurality of MR elements 50A is the same or substantially the same.

[0078] A plurality of main wirings 31A are used to generate a first magnetic field. In the present embodiment, each of the plurality of main wirings 31A extends in a direction parallel to the Y direction. The first end 30Aa is arranged at the front end in the Y direction relative to the plurality of main wirings 31A. The second end 30Ab is arranged at the front end in the -Y direction relative to the plurality of main wirings 31A. When a current flows in the first conductor layer 30A from the first end 30Aa toward the second end 30Ab, the direction of the current flowing through each of the plurality of main wirings 31A becomes the -Y direction, and a first magnetic field including a magnetic field component in the -X direction is generated as a first magnetic field component. When a current flows in the first conductor layer 30A from the second end 30Ab toward the first end 30Aa, the direction of the current flowing through each of the plurality of main wirings 31A becomes the Y direction, and a first magnetic field including a magnetic field component in the X direction is generated as a first magnetic field component.

[0079] like Fig.10 As shown, the second conductor layer 30B includes: a first end 30Ba, a second end 30Bb, a plurality of main wirings 31B disposed between the first end 30Ba and the second end 30Bb and separated from each other, a first sub-wiring 32B electrically connecting the first end 30Ba and the plurality of main wirings 31B, and a second sub-wiring 33B electrically connecting the second end 30Bb and the plurality of main wirings 31B. The first end 30Ba and the second end 30Bb are respectively connected to the processor 4 (refer to Figure 3 )connect.

[0080] The region A20 in which the plurality of MR elements 50B constituting the resistors R21 to R24 constituting the second detection circuit 20 are arranged overlaps with the plurality of main wirings 31B when viewed from the Z direction. In addition, the region A20 is arranged between the first sub-wiring 32B and the second sub-wiring 33B when viewed from the Z direction. That is, the plurality of MR elements 50B may also be arranged between the first sub-wiring 32B and the second sub-wiring 33B when viewed from the Z direction. In the region A20, the intensity of the second magnetic field component is the same or substantially the same. Therefore, the intensity of the second magnetic field component applied to each of the plurality of MR elements 50B is the same or substantially the same.

[0081] A plurality of main wirings 31B are used to generate a second magnetic field. In the present embodiment, each of the plurality of main wirings 31B extends in a direction parallel to the X direction. The first end 30Ba is arranged at the front end of the -X direction relative to the plurality of main wirings 31A. The second end 30Bb is arranged at the front end of the X direction relative to the plurality of main wirings 31A. When a current flows in the second conductor layer 30B from the first end 30Ba toward the second end 30Bb, the direction of the current flowing through each of the plurality of main wirings 31B becomes the X direction, and a second magnetic field including a magnetic field component in the -Y direction is generated as a second magnetic field component. When a current flows in the second conductor layer 30B from the second end 30Bb toward the first end 30Ba, the direction of the current flowing through each of the plurality of main wirings 31B becomes the -X direction, and a second magnetic field including a magnetic field component in the Y direction is generated as a second magnetic field component.

[0082] Here, any of the first and second conductor layers 30A and 30B is indicated by a reference numeral 30. In addition, the first end of the conductor layer 30 corresponding to the first end 30Aa or the first end 30Ba is indicated by a reference numeral 30a. In addition, the second end of the conductor layer 30 corresponding to the second end 30Ab or the second end 30Bb is indicated by a reference numeral 30b. In addition, the plurality of main wirings of the conductor layer 30 corresponding to the plurality of main wirings 31A or the plurality of main wirings 31B are indicated by a reference numeral 31. In addition, the first sub-wiring of the conductor layer 30 corresponding to the first sub-wiring 32A or the first sub-wiring 32B is indicated by a reference numeral 32. In addition, the second sub-wiring of the conductor layer 30 corresponding to the second sub-wiring 33A or the second sub-wiring 33B is indicated by a reference numeral 33.

[0083] Below, refer to Fig.11 and Fig.12 , the structure of the conductor layer 30 is described in detail. Fig.11 It is a plan view showing a part of the conductor layer 30 . Fig.12 3 is a plan view showing another part of the conductor layer 30. In the following description, the extension direction refers to the extension direction of each of the plurality of main wirings 31.

[0084] exist Fig.11 and Fig.12 In the example shown, the conductor layer 30 includes eight main wirings 311, 312, 313, 314, 315, 316, 317, and 318 as a plurality of main wirings 31. The main wirings 311, 312, 313, 314, 315, 316, 317, and 318 are arranged in order in a direction orthogonal to the extension direction. Here, any one of the main wirings 311 to 318 is referred to as a first main wiring, and two main wirings adjacent to both sides of the first main wiring are referred to as a second main wiring and a third main wiring. The interval between the first main wiring and the second main wiring may be the same as the interval between the first main wiring and the third main wiring.

[0085] First, the features related to the first sub-wiring 32 are described. The first sub-wiring 32 includes a plurality of first paths from the first end 30a to each of the plurality of main wirings 31. Each of the plurality of first paths passes through a plurality of first connecting portions branched from the first sub-wiring 32. Any two of the plurality of first paths pass through the same number of first connecting portions. In the present embodiment, in particular, all the first paths may pass through the same number of first connecting portions.

[0086] exist Fig.11 In the example shown, the first sub-wiring 32 includes a plurality of wiring portions 3200, 3201, 3202, 3203, 3204, 3205, 3206, 3207, 3208, 3209, 3210, 3211, 3212, 3213, 3214, and a plurality of first connecting portions 3221, 3222, 3223, 3224, 3225, 3226, 3227. The first sub-wiring 32 is configured by electrically connecting the plurality of wiring portions 3200 to 3214 via the plurality of first connecting portions 3221 to 3227.

[0087] Wiring parts 3200, 3201, and 3202 are connected to a first connection part 3221. Wiring parts 3201, 3203, and 3204 are connected to a first connection part 3222. Wiring parts 3202, 3205, and 3206 are connected to a first connection part 3223. Wiring parts 3203, 3207, and 3208 are connected to a first connection part 3224. Wiring parts 3204, 3209, and 3210 are connected to a first connection part 3225. Wiring parts 3205, 3211, and 3212 are connected to a first connection part 3226. Wiring parts 3206, 3213, and 3214 are connected to a first connection part 3227.

[0088] Wiring section 3200 is connected to first end 30a. Wiring section 3207 is connected to main wiring 311. Wiring section 3208 is connected to main wiring 312. Wiring section 3209 is connected to main wiring 313. Wiring section 3210 is connected to main wiring 314. Wiring section 3211 is connected to main wiring 315. Wiring section 3212 is connected to main wiring 316. Wiring section 3213 is connected to main wiring 317. Wiring section 3214 is connected to main wiring 318.

[0089] exist Fig.11In the example shown, the path from the first end 30a to the main wiring 311 and the path from the first end 30a to the main wiring 312 pass through the first connecting parts 3221, 3222, 3224. The path from the first end 30a to the main wiring 313 and the path from the first end 30a to the main wiring 314 pass through the first connecting parts 3221, 3222, 3225. The path from the first end 30a to the main wiring 315 and the path from the first end 30a to the main wiring 316 pass through the first connecting parts 3221, 3223, 3226. The path from the first end 30a to the main wiring 317 and the path from the first end 30a to the main wiring 318 pass through the first connecting parts 3221, 3223, 3227.

[0090] In this way, Fig.11 In the example shown, the number of the plurality of first connecting portions through which any two of the plurality of first paths pass is three. Fig.11 In the illustrated example, in particular, the number of the plurality of first connecting portions through which each of the plurality of first paths passes is three.

[0091] Furthermore, the plurality of first connection portions 3221 to 3227 may include at least one specific connection portion that electrically connects three wiring portions among the plurality of wiring portions 3200 to 3214. In the present embodiment, in particular, the plurality of first connection portions 3221 to 3227 are all the specific connection portions.

[0092] Here, in each of the plurality of first paths, attention is paid to two first connection portions connected via one wiring portion. The interval between the two first connection portions in the extending direction is preferably equal to or larger than the width of the one wiring portion multiplied by the square root of 2.

[0093] Next, the features related to the second sub-wiring 33 are described. Any two of the plurality of second paths pass through the same number of second connecting portions. In this embodiment, the plurality of second paths may pass through the same number of second connecting portions.

[0094] exist Fig.12 In the example shown, the second sub-wiring 33 includes a plurality of wiring portions 3300, 3301, 3302, 3303, 3304, 3305, 3306, 3307, 3308, 3309, 3310, 3311, 3312, 3313, 3314, and a plurality of second connecting portions 3321, 3322, 3323, 3324, 3325, 3326, 3327. The second sub-wiring 33 is configured by electrically connecting the plurality of wiring portions 3300 to 3314 via the plurality of second connecting portions 3321 to 3327.

[0095] Wiring parts 3300, 3301, and 3302 are connected to a second connection part 3321. Wiring parts 3301, 3303, and 3304 are connected to a second connection part 3322. Wiring parts 3302, 3305, and 3306 are connected to a second connection part 3323. Wiring parts 3303, 3307, and 3308 are connected to a second connection part 3324. Wiring parts 3304, 3309, and 3310 are connected to a second connection part 3325. Wiring parts 3305, 3311, and 3312 are connected to a second connection part 3326. Wiring parts 3306, 3313, and 3314 are connected to a second connection part 3327.

[0096] Wiring section 3300 is connected to second end 30b. Wiring section 3307 is connected to main wiring 311. Wiring section 3308 is connected to main wiring 312. Wiring section 3309 is connected to main wiring 313. Wiring section 3310 is connected to main wiring 314. Wiring section 3311 is connected to main wiring 315. Wiring section 3312 is connected to main wiring 316. Wiring section 3313 is connected to main wiring 317. Wiring section 3314 is connected to main wiring 318.

[0097] exist Fig.12 In the example shown, the path from the second end 30b to the main wiring 311 and the path from the second end 30b to the main wiring 312 pass through the second connecting parts 3321, 3322, 3324. The path from the second end 30b to the main wiring 313 and the path from the second end 30b to the main wiring 314 pass through the second connecting parts 3321, 3322, 3325. The path from the second end 30b to the main wiring 315 and the path from the second end 30b to the main wiring 316 pass through the second connecting parts 3321, 3323, 3326. The path from the second end 30b to the main wiring 317 and the path from the second end 30b to the main wiring 318 pass through the second connecting parts 3321, 3323, 3327.

[0098] In this way, Fig.12 In the example shown, the number of the plurality of second connecting portions through which any two of the plurality of second paths pass is three. Fig.12 In the illustrated example, in particular, the number of the second connecting portions through which each of the plurality of second paths passes is three.

[0099] In addition, the plurality of second connection portions 3321 to 3327 may include at least one specific connection portion that electrically connects three wiring portions among the plurality of wiring portions 3300 to 3314. In this embodiment, in particular, the plurality of second connection portions 3321 to 3327 may all be the specific connection portions.

[0100] Here, in each of the plurality of second paths, attention is paid to two second connection portions connected via one wiring portion. The interval between the two second connection portions in the extending direction is preferably equal to or larger than the width of the one wiring portion multiplied by the square root of 2.

[0101] Next, the number of the plurality of first connection parts and the number of the plurality of second connection parts are described. Here, the number of the plurality of main wirings 31 is set to n. The total number of the plurality of first connection parts and the number of the plurality of second connection parts may also be 2(n-1). Fig.11 and Fig.12 In the illustrated example, the number of main wirings 311 to 318 is eight, and the total number of the plurality of first connection portions 3221 to 3227 and the number of the plurality of second connection portions 3321 to 3327 is fourteen.

[0102] Next, the shape of the conductor layer 30 will be described. Preferably, the conductor layer 30 has a shape that is symmetrical about a virtual plane intersecting the first end 30a and the second end 30b. Fig.11 In the illustrated example, the plurality of main wirings 31 have shapes symmetrical about the virtual plane, and the first sub-wiring 32 and the second sub-wiring 33 each have a shape symmetrical about the virtual plane.

[0103] The cross-sectional shape of each of the plurality of main wirings 31 may be rectangular. The cross-sectional shape of each of the plurality of wiring portions of the first sub-wiring 32 may be rectangular. The cross-sectional shape of each of the plurality of wiring portions of the second sub-wiring 33 may be rectangular.

[0104] Next, the function and effect of the magnetic sensor device 1 of the present embodiment are described. In the magnetic sensor device 1 of the present embodiment, the number of the plurality of first connecting parts through which any two first paths among the plurality of first paths pass is the same. Thus, according to the present embodiment, the current density in any two first paths can be made uniform compared to the case where the number of the plurality of first connecting parts through which any two first paths pass is different. Similarly, in the present embodiment, the number of the plurality of second connecting parts through which any two second paths among the plurality of second paths pass is the same. Thus, according to the present embodiment, the current density in any two second paths can be made uniform compared to the case where the number of the plurality of second connecting parts through which any two second paths pass is different.

[0105] In addition, according to this embodiment, by connecting one of the two first paths and one of the two second paths to the same main wiring 31, and connecting the other of the two first paths and the other of the two second paths to the same other main wiring, the current density in each of the two main wirings 31 can be made uniform.

[0106] In the present embodiment, in particular, the number of the plurality of first connecting portions through which the plurality of first paths pass may be the same, and the number of the plurality of second connecting portions through which the plurality of second paths pass may be the same. Thus, according to the present embodiment, the current density in each of the plurality of main wirings 31 can be made uniform. Thus, according to the present embodiment, the strength of the magnetic field generated from each of the plurality of main wirings 31 can be made uniform. As a result, according to the present embodiment, the strength of the first magnetic field component applied to the plurality of MR elements 50A of the resistors R11 to R14 constituting the first detection circuit 10 of the magnetic sensor 2 can be made uniform, and the strength of the second magnetic field component applied to the plurality of MR elements 50B of the resistors R21 to R24 constituting the second detection circuit 20 of the magnetic sensor 2 can be made uniform.

[0107] In addition, in the present embodiment, each of the plurality of main wirings 31 has a shape that is long in one direction, and has one end closest to the first end 30a and the other end closest to the second end 30b. According to the present embodiment, the lengths of the plurality of first paths can be made the same, and the lengths of the plurality of second paths can be made the same, by making the number of the plurality of first connecting portions through which the plurality of first paths pass the same, and making the number of the plurality of second connecting portions through which the plurality of second paths pass the same. Thus, according to the present embodiment, the potential difference between one end and the other end of each of the plurality of main wirings 31 can be made the same. Thus, according to the present embodiment, the intensity of the first magnetic field component can be made uniform, and the intensity of the second magnetic field component can be made uniform.

[0108] In addition, according to the present embodiment, the lengths of the plurality of main wirings 31 can be made the same, and the lengths of the plurality of first paths can be made the same, and the lengths of the plurality of second paths can be made the same, so that the lengths of the plurality of paths from the first end 30a to the second end 30b via the first sub-wiring 32, the plurality of main wirings 31, and the second sub-wiring 33 can be made the same. Thus, according to the present embodiment, the intensity of the first magnetic field component can be made uniform, and the intensity of the second magnetic field component can be made uniform.

[0109] In addition, according to the present embodiment, the cross-sectional areas of the plurality of main wirings 31 are all the same, the cross-sectional areas of the plurality of wiring portions 3200 to 3214 of the first sub-wiring 32 are all the same, and the cross-sectional areas of the plurality of wiring portions 3300 to 3314 of the second sub-wiring 33 are all the same, and the lengths of the plurality of paths are all the same, so that the resistance values ​​of the plurality of paths are all the same. Thus, according to the present embodiment, the intensity of the first magnetic field component can be made uniform, and the intensity of the second magnetic field component can be made uniform.

[0110] [Modifications]

[0111] Next, a modification of the conductor layer 30 of the magnetic field generator 3 of this embodiment will be described. Fig.13 , the conductor layer of the first variation is described. Fig.13 30C is a top view of a conductor layer 30C according to a first variation. The conductor layer 30C includes a first end 30Ca, a second end 30Cb, a plurality of main wirings 31C disposed between the first end 30Ca and the second end 30Cb and separated from each other, a first sub-wiring 32C electrically connecting the first end 30Ca and the plurality of main wirings 31C, and a second sub-wiring 33C electrically connecting the second end 30Cb and the plurality of main wirings 31C.

[0112] The first sub-wiring 32C includes a plurality of first paths extending from the first end 30Ca to each of the plurality of main wirings 31C. Each of the plurality of first paths passes through a plurality of first connecting portions branched from the first sub-wiring 32C. The number of the plurality of first connecting portions through which each of the plurality of first paths passes is four.

[0113] The second sub-wiring 33C includes a plurality of second paths extending from the second end 30Cb to each of the plurality of main wirings 31C. Each of the plurality of second paths passes through a plurality of second connecting portions branched from the second sub-wiring 33C. The number of second connecting portions through which each of the plurality of second paths passes is four.

[0114] In the conductor layer 30C of the first modification example, the number of the plurality of main wirings 31C is 16, and the total number of the plurality of first connecting portions and the number of the plurality of second connecting portions is 30.

[0115] Next, refer to Fig.14 , the conductor layer of the second variation is described. Fig.14 30D is a top view of a conductor layer 30D according to a second variation. The conductor layer 30D includes a first end 30Da, a second end 30Db, a plurality of main wirings 31D disposed between the first end 30Da and the second end 30Db and separated from each other, a first sub-wiring 32D electrically connecting the first end 30Da and the plurality of main wirings 31D, and a second sub-wiring 33D electrically connecting the second end 30Db and the plurality of main wirings 31D.

[0116] The first sub-wiring 32D includes a plurality of first paths from the first end 30Da to each of the plurality of main wirings 31D. Each of the plurality of first paths passes through a plurality of first connecting portions branched from the first sub-wiring 32D. The number of the plurality of first connecting portions passed through by each of the plurality of first paths is two. The plurality of first paths include: four first paths having a first length, two first paths having a second length shorter than the first length, two first paths having a third length shorter than the second length, and one first path having a fourth length shorter than the third length.

[0117] The second sub-wiring 33D includes a plurality of second paths from the second end 30Db to each of the plurality of main wirings 31D. Each of the plurality of second paths passes through a plurality of second connecting portions branched from the second sub-wiring 33D. The number of the plurality of second connecting portions passed through by each of the plurality of second paths is two. The plurality of second paths include: four second paths having a fifth length, two second paths having a sixth length shorter than the fifth length, two second paths having a seventh length shorter than the sixth length, and one second path having an eighth length shorter than the seventh length.

[0118] In the conductor layer 30D of the second modification, the number of the plurality of main wirings 31D is nine, and the total number of the plurality of first connecting portions and the number of the plurality of second connecting portions is eight.

[0119] Next, refer to Fig.15 , the conductor layer of the third variant is described. Fig.15 30Ea, a plurality of main wirings 31E disposed between the first end 30Ea and the second end 30Eb and separated from each other, a first sub-wiring 32E electrically connecting the first end 30Ea and the plurality of main wirings 31E, and a second sub-wiring 33E electrically connecting the second end 30Eb and the plurality of main wirings 31E.

[0120] The first sub-wiring 32E includes a plurality of first paths from the first end 30Ea to each of the plurality of main wirings 31E. Each of the plurality of first paths passes through a plurality of first connecting portions branched from the first sub-wiring 32E. The number of the plurality of first connecting portions passed by each of the plurality of first paths is three. The plurality of first paths include: eight first paths having a first length, four first paths having a second length shorter than the first length, four first paths having a third length shorter than the second length, two first paths having a fourth length shorter than the third length, and one first path having a fifth length shorter than the fourth length.

[0121] The second sub-wiring 33E includes a plurality of second paths from the second end 30Eb to each of the plurality of main wirings 31E. Each of the plurality of second paths passes through a plurality of second connecting portions branched from the second sub-wiring 33E. The number of the plurality of second connecting portions passed through by each of the plurality of second paths is three. The plurality of second paths include: eight second paths having a sixth length, four second paths having a seventh length shorter than the sixth length, four second paths having an eighth length shorter than the seventh length, two second paths having a ninth length shorter than the eighth length, and one second path having a tenth length shorter than the ninth length.

[0122] In the conductor layer 30E of the second modification, the number of the plurality of main wirings 31E is 19, and the total number of the plurality of first connecting portions and the number of the plurality of second connecting portions is 22.

[0123] [Second embodiment]

[0124] Next, a second embodiment of the present invention is described. First, the structure of the magnetic sensor device 1 of this embodiment is briefly described in terms of differences from the first embodiment. In this embodiment, the magnetic sensor 2 and the magnetic field generator 3 are integrated into one electronic component, and the processor 4 is configured as an electronic component separate from the magnetic sensor 2 and the magnetic field generator 3. Hereinafter, the electronic component including the magnetic sensor 2 and the magnetic field generator 3 is referred to as an electronic component 105. The electronic component 105 is the same as the first electronic component 5 or the second electronic component 6 of the first embodiment, and has the form of a rectangular chip.

[0125] Next, refer to Fig.16 , the structure of the electronic component 105 is described. Fig.16 1 is a cross-sectional view showing the electronic component 105 .

[0126] The magnetic field generator 3 includes two first conductor layers 130A1 and 130A2 each made of a conductive material instead of the first conductor layer 30A of the first embodiment. The shapes of the first conductor layers 130A1 and 130A2 are the same as the shape of the first conductor layer 30A. The first conductor layers 130A1 and 130A2 are configured to generate a first magnetic field including a first magnetic field component applied to the first detection circuit 10 of the magnetic sensor 2. The first conductor layers 130A1 and 130A2 are connected in series or in parallel.

[0127] In addition, the magnetic field generator 3 includes two second conductor layers 130B1 and 130B2 each made of a conductive material instead of the second conductor layer 30B of the first embodiment. The shape of each of the second conductor layers 130B1 and 130B2 is the same as that of the second conductor layer 30B. The second conductor layers 130B1 and 130B2 are configured to generate a second magnetic field including a second magnetic field component applied to the second detection circuit 20 of the magnetic sensor 2. The second conductor layers 130B1 and 130B2 are connected in series or in parallel.

[0128] The electronic component 105 further includes a substrate 141, and insulating layers 142, 143, 144, 145, 146, 147, 148, 149, and 150. The insulating layer 142 is disposed on the substrate 141. The first conductor layer 130A1 and the second conductor layer 130B1 are disposed on the insulating layer 142. The insulating layer 143 is disposed on the insulating layer 142, around the first conductor layer 130A1 and around the second conductor layer 130B1. The insulating layer 144 is disposed on the first conductor layer 130A1, the second conductor layer 130B1, and the insulating layer 143.

[0129] As described in the first embodiment, the first detection circuit 10 of the magnetic sensor 2 includes: a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A. The second detection circuit 20 of the magnetic sensor 2 includes: a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B. The plurality of lower electrodes 61A and the plurality of lower electrodes 61B are arranged on the insulating layer 144. The insulating layer 145 is arranged on the insulating layer 144 around the plurality of lower electrodes 61A and around the plurality of lower electrodes 61B. The plurality of MR elements 50A are arranged on the plurality of lower electrodes 61A. The plurality of MR elements 50B are arranged on the plurality of lower electrodes 61B. The insulating layer 146 is arranged on the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the insulating layer 145 around the plurality of MR elements 50A and around the plurality of MR elements 50B.

[0130] The plurality of upper electrodes 62A are disposed on the plurality of MR elements 50A and the insulating layer 146. The plurality of upper electrodes 62B are disposed on the plurality of MR elements 50B and the insulating layer 146. The insulating layer 147 is disposed on the insulating layer 146 and around the plurality of upper electrodes 62A and around the plurality of upper electrodes 62B.

[0131] The insulating layer 148 is disposed on the plurality of upper electrodes 62A, the plurality of upper electrodes 62B, and the insulating layer 147. The first conductor layer 130A2 and the second conductor layer 130B2 are disposed on the insulating layer 148. The insulating layer 149 is disposed on the insulating layer 148, around the first conductor layer 130A2 and around the second conductor layer 130B2. The insulating layer 150 is disposed on the first conductor layer 130A2, the second conductor layer 130B2, and the insulating layer 149.

[0132] In this embodiment, the plurality of MR elements 50A of the first detection circuit 10 may be disposed between the first conductor layer 130A1 and the first conductor layer 130A2. In addition, the magnetic field generator 3 may include only one of the first conductor layer 130A1 and the first conductor layer 130A2.

[0133] In this embodiment, the plurality of MR elements 50B of the second detection circuit 20 may be disposed between the second conductor layer 130B1 and the second conductor layer 130B2. Furthermore, the magnetic field generator 3 may include only one of the second conductor layers 130B1 and 130B2.

[0134] The other structures, functions and effects of this embodiment are the same as those of the first embodiment.

[0135] [Third Embodiment]

[0136] Next, a third embodiment of the present invention will be described. First, the differences in the structure of the magnetic sensor device 1 of this embodiment from the first embodiment will be briefly described. The magnetic sensor device 1 of this embodiment includes a magnetic sensor 202 instead of the magnetic sensor 2 of the first embodiment. The first electronic component 5 (see Figure 2 ) includes a magnetic sensor 202. The magnetic sensor 202 includes a first detection circuit 210 and a second detection circuit 220.

[0137] The first detection circuit 210 is the same as the first detection circuit 10 of the first embodiment, and includes: a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A. The second detection circuit 220 is the same as the second detection circuit 20 of the first embodiment, and includes a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B.

[0138] The magnetic sensor device 1 of this embodiment detects geomagnetism as the target magnetic field. The first detection circuit 210 detects the component of the first direction of the geomagnetism and generates at least one first detection signal corresponding to the component. The second detection circuit 220 detects the component of the second direction of the geomagnetism and generates at least one second detection signal corresponding to the component. In this embodiment, in particular, the first direction is a direction parallel to the X direction, and the second direction is a direction parallel to the Y direction.

[0139] The first and second detection circuits 210, 220 and the processor 4 (see Figure 3 The processor 4 is configured to generate a detection value having a corresponding relationship with the intensity of the component in the first direction of the geomagnetism and a detection value having a corresponding relationship with the intensity of the component in the second direction of the geomagnetism based on at least one first detection signal and at least one second detection signal.

[0140] Next, refer to Fig.17 , the circuit structure of the magnetic sensor 202 is described. Fig.17 2 is a circuit diagram showing a circuit configuration of the magnetic sensor 202 .

[0141] The structure of the first detection circuit 210 is similar to that of the first embodiment. Figure 4 The structure of the first detection circuit 10 shown is basically the same. The first detection circuit 210 includes four resistors R11, R12, R13, and R14. Each of the resistors R11 to R14 includes a plurality of MR elements 50A.

[0142] In addition, the structure of the second detection circuit 220 is similar to that of the first embodiment. Figure 4 The structure of the second detection circuit 220 is basically the same. The second detection circuit 220 includes four resistors R21, R22, R23, and R24. Each of the resistors R21 to R24 includes a plurality of MR elements 50B.

[0143] As described in the first embodiment, each of the plurality of MR elements 50A and the plurality of MR elements 50B includes a magnetization fixed layer 52 and a free layer 54 (see Figure 6 ).exist Fig.17 In FIG. 1 , the solid arrows indicate the magnetization directions of the magnetization fixed layers 52 of the resistors R11 to R14 and R21 to R24. The magnetization directions of the magnetization fixed layers 52 of the resistors R11 to R14 and R21 to R24 are different from those of the first embodiment. Figure 4 The directions shown are the same.

[0144] exist Fig.17In FIG. 1 , the hollow arrows indicate the magnetization direction of the free layer 54 when no target magnetic field (external magnetic field) is applied to the first and second detection circuits 210 and 220. The free layer 54 of each of the resistors R11 to R14 has a shape anisotropy in which the easy magnetization axis direction is parallel to the Y direction. Fig.17 In the example shown, when the target magnetic field (external magnetic field) is not applied to the first detection circuit 210, the magnetization direction of the free layer 54 of the resistors R11 and R12 is the Y direction. In the above case, the magnetization direction of the free layer 54 of the resistors R13 and R14 is the -Y direction.

[0145] The easy magnetization axis direction of the free layer 54 of each of the resistor portions R21 to R24 has shape anisotropy such that the easy magnetization axis direction is parallel to the X direction. Fig.17 In the example shown, when the target magnetic field (external magnetic field) is not applied to the second detection circuit 220, the magnetization direction of the free layer 54 of the resistors R21 and R22 is in the X direction. In the above case, the magnetization direction of the free layer 54 of the resistors R23 and R24 is in the -X direction.

[0146] Next, the structure of the magnetic field generator 3 of this embodiment is described. In this embodiment, the magnetic field generator 3 includes a first conductor layer 230A and a second conductor layer 230B each made of a conductive material, instead of the first and second conductor layers 30A and 30B of the first embodiment.

[0147] First, the structure of the first conductor layer 230A will be described. The first conductor layer 230A is configured to generate a first magnetic field including a first magnetic field component applied to a portion of each of the first and second detection circuits 210 and 220 .

[0148] The first conductor layer 230A has the same structure as the first conductor layer 30A of the first embodiment. That is, the first conductor layer 230A includes: a first end, a second end, a plurality of main wirings 231A disposed between the first end and the second end and separated from each other, a first sub-wiring electrically connecting the first end and the plurality of main wirings 231A, and a second sub-wiring electrically connecting the second end and the plurality of main wirings 231A. The first end and the second end are respectively connected to the processor 4 (see Figure 3 )connect.

[0149] The first conductive layer 230A is arranged to overlap a portion of each of the first and second detection circuits 210 and 220 when viewed from the Z direction. Fig.18 , the configuration of the first conductor layer 230A is described. Fig.18 It is a plan view showing a part of the first conductive layer 230A.

[0150] exist Fig.18 In the figure, the rectangular area marked with reference numeral A211 represents the area where the plurality of MR elements 50A constituting the resistor section R11 of the first detection circuit 210 are arranged. In addition, the rectangular area marked with reference numeral A212 represents the area where the plurality of MR elements 50A constituting the resistor section R12 of the first detection circuit 210 are arranged. In addition, the rectangular area marked with reference numeral A221 represents the area where the plurality of MR elements 50B constituting the resistor section R21 of the second detection circuit 220 are arranged. In addition, the rectangular area marked with reference numeral A222 represents the area where the plurality of MR elements 50B constituting the resistor section R22 of the second detection circuit 220 are arranged.

[0151] like Fig.18 As shown, region A221 is arranged at the front end of the X direction relative to region A211. Regions A212 and A222 are arranged at the front end of the -Y direction relative to regions A211 and A221, respectively. When viewed from the Z direction, regions A211, A212, A221, and A222 overlap with a plurality of main wirings 231A. In addition, when viewed from the Z direction, regions A211, A212, A221, and A222 are arranged between the first sub-wiring and the second sub-wiring. In addition, the arrangement of regions A211, A212, A221, and A222 is not limited to Fig.18 Example shown.

[0152] Here, if Fig.18 As shown, the U direction and the V direction are defined as follows. The U direction is a direction rotated from the X direction toward the -Y direction. The V direction is a direction rotated from the Y direction toward the X direction. In the present embodiment, in particular, the U direction is set to a direction rotated by α from the X direction toward the -Y direction, and the V direction is set to a direction rotated by α from the Y direction toward the X direction. In addition, α is an angle greater than 0° and less than 90°. In one example, α is 45°. In addition, the direction opposite to the U direction is set to the -U direction, and the direction opposite to the V direction is set to the -V direction.

[0153] The plurality of main wirings 231A are used to generate a first magnetic field. Fig.18 In the example shown, each of the plurality of main wirings 231A extends in a direction parallel to the U direction. The first end is arranged at the front end of the U direction relative to the plurality of main wirings 231A. The second end is arranged at the front end of the -U direction relative to the plurality of main wirings 231A. When a current flows in the first conductor layer 230A from the first end toward the second end, the direction of the current flowing through each of the plurality of main wirings 231A becomes the -U direction, and a first magnetic field including a magnetic field component in the V direction is generated as a first magnetic field component.

[0154] Next, the structure of the second conductor layer 230B will be described. The second conductor layer 230B is configured to generate a second magnetic field including a second magnetic field component to be applied to the other part of each of the first and second detection circuits 210 and 220 .

[0155] The second conductor layer 230B has the same structure as the second conductor layer 30B of the first embodiment. That is, the second conductor layer 230B includes: a first end, a second end, a plurality of main wirings 231B disposed between the first end and the second end and separated from each other, a first sub-wiring electrically connecting the first end and the plurality of main wirings 231B, and a second sub-wiring electrically connecting the second end and the plurality of main wirings 231B. The first end and the second end are respectively connected to the processor 4 (see Figure 3 )connect.

[0156] The second conductive layer 230B is arranged to overlap a portion of each of the first and second detection circuits 210 and 220 when viewed from the Z direction. Fig.19 , the configuration of the second conductor layer 230B is described. Fig.19 It is a plan view showing a part of the second conductive layer 230B.

[0157] exist Fig.19 In the figure, the rectangular area marked with reference numeral A213 represents the area where the plurality of MR elements 50A constituting the resistor section R13 of the first detection circuit 210 are arranged. In addition, the rectangular area marked with reference numeral A214 represents the area where the plurality of MR elements 50A constituting the resistor section R14 of the first detection circuit 210 are arranged. In addition, the rectangular area marked with reference numeral A223 represents the area where the plurality of MR elements 50B constituting the resistor section R23 of the second detection circuit 220 are arranged. In addition, the rectangular area marked with reference numeral A224 represents the area where the plurality of MR elements 50B constituting the resistor section R24 of the second detection circuit 220 are arranged.

[0158] like Fig.19 As shown, region A223 is arranged at the front end of the X direction relative to region A213. Regions A214 and A224 are arranged at the front end of the -Y direction relative to regions A213 and A223, respectively. When viewed from the Z direction, regions A213, A214, A223, and A224 overlap with a plurality of main wirings 231B. In addition, when viewed from the Z direction, regions A213, A214, A223, and A224 are arranged between the first sub-wiring and the second sub-wiring. In addition, the arrangement of regions A213, A214, A223, and A224 is not limited to Fig.19 Example shown.

[0159] The plurality of main wirings 231B are used to generate a second magnetic field. Fig.19In the example shown, each of the plurality of main wirings 231B extends in a direction parallel to the U direction. The first end is arranged at the front end of the -U direction relative to the plurality of main wirings 231B. The second end is arranged at the front end of the U direction relative to the plurality of main wirings 231B. When a current flows in the second conductor layer 230B from the first end toward the second end, the direction of the current flowing through each of the plurality of main wirings 231B becomes the U direction, and a second magnetic field including a magnetic field component in the -V direction is generated as a second magnetic field component.

[0160] Next, the function and effect of the magnetic sensor device 1 of the present embodiment will be described. The free layer 54 of each of the plurality of MR elements 50A constituting the resistors R11 to R14 of the first detection circuit 210 has a shape anisotropy in which the easy magnetization axis direction is parallel to the Y direction. When the target magnetic field (external magnetic field) is not applied to the first detection circuit 210, the magnetization direction of the free layer 54 of each of the resistors R11 and R12 is in the Y direction. However, sometimes the magnetization direction of the free layer 54 of each of the resistors R11 and R12 becomes the -Y direction due to a noise magnetic field such as an interference magnetic field. In this case, when the first magnetic field is generated by the first conductor layer 230A of the magnetic field generator 3 and a magnetic field component in the V direction is temporarily applied to each of the resistors R11 and R12, the magnetization direction of the free layer 54 also becomes the V direction. Then, when the generation of the first magnetic field is stopped, the magnetization direction of the free layer 54 of each of the resistors R11 and R12 becomes the Y direction.

[0161] Similarly, when the target magnetic field (interference magnetic field) is not applied to the first detection circuit 210, the magnetization direction of the free layer 54 of each of the resistors R13 and R14 is in the -Y direction. However, sometimes the magnetization direction of the free layer 54 of each of the resistors R13 and R14 becomes the Y direction due to the external magnetic field. In this case, when the second magnetic field is generated by the second conductor layer 230B of the magnetic field generator 3 and the magnetic field component in the -V direction is temporarily applied to each of the resistors R13 and R14, the magnetization direction of the free layer 54 also becomes the -V direction. Then, when the generation of the second magnetic field is stopped, the magnetization direction of the free layer 54 of each of the resistors R13 and R14 becomes the -Y direction.

[0162] Thus, the magnetic field generator 3 of this embodiment can also be used to align the magnetization direction of the free layer 54 of each of the resistors R11 to R14 with a predetermined direction (Y direction or −Y direction), that is, to set or reset the magnetization direction of the free layer 54 .

[0163] The above description of the resistors R11 to R14 of the first detection circuit 210 is also applicable to the resistors R21 to R24 of the second detection circuit 220. The magnetic field generator 3 of this embodiment is used to make the magnetization direction of the free layer 54 of the resistors R21 and R22 consistent with the X direction, and to make the magnetization direction of the free layer 54 of the resistors R23 and R24 consistent with the -X direction.

[0164] The other structures, functions and effects of this embodiment are the same as those of the first embodiment.

[0165] [Fourth Embodiment]

[0166] Next, a fourth embodiment of the present invention is described. First, the structure of the magnetic sensor device 1 of this embodiment is briefly described in terms of differences from the third embodiment. In this embodiment, the magnetic sensor 202 and the magnetic field generator 3 are integrated into one electronic component, and the processor 4 is configured as an electronic component separate from the magnetic sensor 202 and the magnetic field generator 3. Hereinafter, the electronic component including the magnetic sensor 202 and the magnetic field generator 3 is referred to as the electronic component 205. The electronic component 205 is the same as the first electronic component 5 or the second electronic component 6 of the first embodiment, and has the form of a rectangular parallelepiped chip.

[0167] Next, refer to Fig. 20 , the structure of the electronic component 205 is described. Fig. 20 2 is a cross-sectional view showing the electronic component 205 .

[0168] The magnetic field generator 3 includes two first conductor layers 330A1 and 330A2 each made of a conductive material instead of the first conductor layer 230A of the third embodiment. The shapes of the first conductor layers 330A1 and 330A2 are the same as the shapes of the first conductor layer 230A. The first conductor layers 330A1 and 330A2 are configured to generate a first magnetic field including a first magnetic field component applied to a part of each of the first and second detection circuits 210 and 220 of the magnetic sensor 202. The first conductor layers 330A1 and 330A2 are connected in series or in parallel.

[0169] In addition, the magnetic field generator 3 includes two second conductor layers 330B1 and 330B2 each made of a conductive material instead of the second conductor layer 230B of the third embodiment. The shape of each of the second conductor layers 330B1 and 330B2 is the same as that of the second conductor layer 230B. The second conductor layers 330B1 and 330B2 are configured to generate a second magnetic field including a second magnetic field component applied to the other part of each of the first and second detection circuits 210 and 220 of the magnetic sensor 202. The second conductor layers 330B1 and 330B2 are connected in series or in parallel.

[0170] The electronic component 205 includes a substrate 341, and insulating layers 342, 343, 344, 345, 346, 347, 348, 349, and 350. The insulating layer 342 is disposed on the substrate 341. The first conductor layer 330A1 and the second conductor layer 330B1 are disposed on the insulating layer 342. The insulating layer 343 is disposed on the insulating layer 342, around the first conductor layer 330A1 and around the second conductor layer 330B1. The insulating layer 344 is disposed on the first conductor layer 330A1, the second conductor layer 330B1, and the insulating layer 343.

[0171] As described in the third embodiment, the first detection circuit 210 of the magnetic sensor 202 includes: a plurality of MR elements 50A, a plurality of lower electrodes 61A, and a plurality of upper electrodes 62A. The second detection circuit 220 of the magnetic sensor 202 includes: a plurality of MR elements 50B, a plurality of lower electrodes 61B, and a plurality of upper electrodes 62B. The plurality of lower electrodes 61A and the plurality of lower electrodes 61B are arranged on the insulating layer 344. The insulating layer 345 is arranged on the insulating layer 344, around the plurality of lower electrodes 61A and around the plurality of lower electrodes 61B. The plurality of MR elements 50A are arranged on the plurality of lower electrodes 61A. The plurality of MR elements 50B are arranged on the plurality of lower electrodes 61B. The insulating layer 346 is arranged on the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, and the insulating layer 345, around the plurality of MR elements 50A and around the plurality of MR elements 50B.

[0172] The plurality of upper electrodes 62A are disposed on the plurality of MR elements 50A and the insulating layer 346. The plurality of upper electrodes 62B are disposed on the plurality of MR elements 50B and the insulating layer 346. The insulating layer 347 is disposed on the insulating layer 346 and around the plurality of upper electrodes 62A and around the plurality of upper electrodes 62B.

[0173] The insulating layer 348 is disposed on the plurality of upper electrodes 62A, the plurality of upper electrodes 62B, and the insulating layer 347. The first conductor layer 330A2 and the second conductor layer 330B2 are disposed on the insulating layer 348. The insulating layer 349 is disposed on the insulating layer 348, around the first conductor layer 330A2 and around the second conductor layer 330B2. The insulating layer 350 is disposed on the first conductor layer 330A2, the second conductor layer 330B2, and the insulating layer 349.

[0174] In this embodiment, the plurality of MR elements 50A of the resistors R11 and R12 of the first detection circuit 210 and the plurality of MR elements 50B of the resistors R21 and R22 of the second detection circuit 220 are arranged between the first conductor layer 330A1 and the first conductor layer 330A2. In addition, the magnetic field generator 3 may include only one of the first conductor layer 330A1 and the first conductor layer 330A2.

[0175] In addition, in this embodiment, the plurality of MR elements 50A of the resistors R13 and R14 of the first detection circuit 210 and the plurality of MR elements 50B of the resistors R23 and R24 of the second detection circuit 220 are arranged between the second conductor layer 330B1 and the second conductor layer 330B2. In addition, the magnetic field generator 3 may include only one of the second conductor layers 330B1 and 330B2.

[0176] The other structures, functions and effects of this embodiment are the same as those of the third embodiment.

[0177] [Fifth Embodiment]

[0178] Next, a fifth embodiment of the present invention will be described. Fig.21 , the structure of the current sensor system including the magnetic sensor device of this embodiment is described. The magnetic sensor device 401 of this embodiment is used as a current sensor device for detecting the value of the detection target current flowing through a conductor. Fig.21 , an example is shown in which the conductor through which the detection target current flows is a busbar 405. The magnetic sensor device 401 is arranged near the busbar 405. Hereinafter, the detection target current is recorded as the target current Itg. Around the busbar 405, a magnetic field 406 is generated by the target current Itg. The magnetic sensor device 401 is arranged at a position where the magnetic field 406 is applied.

[0179] Next, refer to Fig. 22 , the structure of the magnetic sensor device 401 of this embodiment is described. Fig. 22 4 is a cross-sectional view showing the magnetic sensor device 401. The magnetic sensor device 401 is a current sensor device of a magnetic balance type. Fig. 22 As shown in FIG. 4 , the magnetic sensor device 401 includes a magnetic sensor 402 and a magnetic field generator 403. The magnetic sensor 402 and the magnetic field generator 403 are integrated through a plurality of insulating layers described later. Fig.21 )independent.

[0180] Here, if Fig.21 and Fig. 22As shown in FIG. 1 , the X direction, Y direction, and Z direction of this embodiment are defined. The X direction, Y direction, and Z direction are orthogonal to each other. In this embodiment, Fig.21 The direction in which the target current Itg shown flows is assumed to be the Y direction.

[0181] Here, the magnetic field 406 generated by the object current Itg that can be detected by the magnetic sensor 402 is referred to as the first magnetic field H1. The magnetic field generator 403 is used to generate the second magnetic field H2 to offset the first magnetic field H1. The magnetic sensor 402 is configured to detect the composite magnetic field of the first magnetic field H1 and the second magnetic field H2 as the magnetic field to be detected (detection object magnetic field), that is, the object magnetic field. In addition, the magnetic sensor 402 is configured to generate a magnetic field detection value S corresponding to the intensity of the object magnetic field. The first magnetic field H1 and the second magnetic field H2 are described later. Fig.23 Shown in.

[0182] In the present embodiment, the directions of the first magnetic field H1 , the second magnetic field H2 , and the target magnetic field are parallel to the direction X. The structure of the magnetic sensor 402 will be described in detail later.

[0183] The magnetic field generator 403 includes a first conductor layer 430L and a second conductor layer 430U, each of which is made of a conductive material. The first and second conductor layers 430L and 430U are configured to generate a second magnetic field H2. Fig. 22 As shown, when viewed from the Z direction, the first and second conductor layers 430L and 430U are arranged to overlap with the magnetic sensor 402. The first and second conductor layers 430L and 430U are connected in series or in parallel.

[0184] Each of the first and second conductor layers 430L and 430U has the same structure as the first conductor layer 30A. That is, the first conductor layer 430L includes: a first end, a second end, a plurality of main wirings 431L disposed between the first end and the second end and separated from each other, a first sub-wiring electrically connecting the first end and the plurality of main wirings 431L, and a second sub-wiring 433L electrically connecting the second end and the plurality of main wirings 431L. The second conductor layer 430U includes: a first end, a second end, a plurality of main wirings 431U disposed between the first end and the second end and separated from each other, a first sub-wiring 432U electrically connecting the first end and the plurality of main wirings 431U, and a second sub-wiring electrically connecting the second end and the plurality of main wirings 431U. Fig. 22 The shapes of the plurality of main wirings 431L and the plurality of main wirings 431U are shown as the shapes of the first and second conductor layers 430L and 430U. The main wirings 431L and 431U, the first sub-wiring 432U, and the second sub-wiring 433L are described later. Fig.23 Shown in.

[0185] like Fig. 22As shown, the magnetic sensor device 401 further includes: a substrate 441, and insulating layers 442, 443, 444, 445, and 446. The insulating layer 442 is disposed on the substrate 441. The first conductor layer 430L is disposed on the insulating layer 442. The insulating layer 443 is disposed around the first conductor layer 430L on the insulating layer 442. The insulating layer 444 is disposed on the first conductor layer 430L and the insulating layer 443.

[0186] The magnetic sensor 402 is disposed on the insulating layer 444. The insulating layer 445 is disposed to cover the magnetic sensor 402 and the insulating layer 444. The second conductive layer 430U is disposed on the insulating layer 445. The insulating layer 446 is disposed to cover the second conductive layer 430U and the insulating layer 445.

[0187] Next, refer to Fig.23 , a circuit connected to the magnetic sensor device 401 will be described. The magnetic sensor device 401 and the circuit connected to the magnetic sensor device 401 constitute the current sensor system 400. Fig.23 4 is a block diagram showing the structure of the current sensor system 400. Fig.23 As shown, the current sensor system 400 includes: a magnetic sensor device 401, a feedback circuit 470, and a current detector 480. The feedback circuit 470 controls the feedback current for generating the second magnetic field H2 and flows it through the magnetic field generator 403 according to the magnetic field detection value S. The current detector 480 generates a detection value of the feedback current flowing through the magnetic field generator 403. The current detector 480 is, for example, a resistor inserted into the current path of the feedback current. The potential difference between the two ends of the resistor is equivalent to the detection value of the feedback current. Hereinafter, the detection value of the feedback current generated by the current detector 480 is referred to as the current detection value. The current detection value is in a proportional relationship with the value of the object current Itg. Therefore, the current detection value is equivalent to the detection value of the object current Itg.

[0188] The feedback circuit 470 includes a control circuit 471 . The control circuit 471 generates a feedback current controlled according to the magnetic field detection value S and supplies the feedback current to the magnetic field generator 403 .

[0189] Next, the structure of the magnetic sensor 402 is described in detail. The magnetic sensor 402 includes a plurality of magnetic detection elements. The magnetic detection element may be, for example, an MR element or a Hall element. The MR element may be a spin valve type MR element or an AMR (anisotropic magnetoresistance effect) element. In the present embodiment, in particular, the magnetic sensor 402 includes a plurality of spin valve type MR elements 50 as a plurality of magnetic detection elements. The structure of each of the plurality of MR elements 50 is the same as that of the first embodiment. Each of the plurality of MR elements 50 includes a magnetization fixed layer 52, a gap layer 53 and a free layer 54 as described in the first embodiment. Each of the plurality of MR elements 50 may also include the antiferromagnetic layer 51 described in the first embodiment.

[0190] Fig.24 : is a circuit diagram showing the circuit structure of the magnetic sensor 402. The magnetic sensor 402 includes: four resistors R411, R412, R413, R414, a power port V41, a ground port G41, two output ports E41, E42, and a differential detector 410. The resistor R411 is provided between the power port V41 and the output port E41. The resistor R412 is provided between the output port E41 and the ground port G41. The resistor R413 is provided between the output port E42 and the ground port G41. The resistor R414 is provided between the power port V41 and the output port E42. A voltage or current of a predetermined magnitude is applied to the power port V41. The ground port G41 is grounded.

[0191] Each of the resistor sections R211 to R214 includes at least one MR element 50. Fig.24 In FIG. 1 , the solid arrows indicate the magnetization directions of the magnetization fixed layers 52 of the resistors R411 to R414. Fig.24 In the example shown, in each of the resistors R411 to R414, the magnetization direction of the magnetization fixed layer 52 is set so that the magnetic sensitivity direction of the magnetic sensor 402 is parallel to the X direction. The magnetization direction of the magnetization fixed layer 52 of each of the resistors R411 and R413 is the X direction. The magnetization direction of the magnetization fixed layer 52 of each of the resistors R412 and R414 is the -X direction. The free layer 54 of each of the resistors R411 to R414 has shape anisotropy in which the easy magnetization axis direction is parallel to the Y direction.

[0192] The magnetic field 406 generated by the target current Itg and the magnetic field generated by the magnetic field generator 403 are applied to the magnetic sensor 402. The magnetic sensor 402 is arranged at a position where the directions of the two applied magnetic fields are opposite or substantially opposite to each other, and is arranged in a posture where the magnetic sensitivity direction becomes parallel or substantially parallel to the directions of the two applied magnetic fields.

[0193] In this example, the magnetic field generated by the target current Itg and applied to the magnetic sensor 402 is the first magnetic field H1. The magnetic field generated by the magnetic field generator 403 and applied to the magnetic sensor 402 is the second magnetic field H2.

[0194] In the magnetic sensor 402, the potential difference between the output ports E41 and E42 changes according to the intensity of the target magnetic field. The differential detector 410 outputs a signal corresponding to the potential difference between the output ports E41 and E42 as the magnetic field detection value S. In addition, according to the magnitude relationship between the first magnetic field H1 and the second magnetic field H2, the intensity of the target magnetic field, the potential difference between the output ports E41 and E42, and the magnetic field detection value S can become positive or negative.

[0195] The other structures, functions and effects of this embodiment are the same as those of the first embodiment.

[0196] [Sixth Embodiment]

[0197] Next, a sixth embodiment of the present invention is described. In this embodiment, the magnetic field generator is configured to generate a magnetic field for testing a magnetic sensor. The magnetic sensor to be tested may be the magnetic sensor 2 of the first embodiment, the magnetic sensor 202 of the third embodiment, or the magnetic sensor 402 of the fifth embodiment.

[0198] The magnetic field generator of this embodiment may have the same structure as the magnetic field generator 3 of the first embodiment or the third embodiment. The magnetic field generator is configured to generate a magnetic field (target magnetic field) to be detected by the magnetic sensor as a magnetic field for inspection.

[0199] The magnetic field generator of this embodiment is separate from the magnetic sensor and is arranged in a position and posture that can apply a magnetic field for inspection to the magnetic sensor. In addition, when the magnetic sensor to be inspected is the magnetic sensor 2 of the first embodiment, in addition to the magnetic field generator of this embodiment, the magnetic field generator 3 of the first embodiment may be provided. When the magnetic sensor to be inspected is the magnetic sensor 2 of the third embodiment, in addition to the magnetic field generator of this embodiment, the magnetic field generator 3 of the third embodiment may be provided.

[0200] The other structures, functions and effects of this embodiment are the same as those of the first, third or fifth embodiment.

[0201] The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the magnetic sensor device of the present invention may be configured as an electronic component in which the magnetic sensor, the magnetic field generator, and the processor are separate bodies.

[0202] In addition, the magnetic sensor device 1 of the first embodiment may be configured such that the first magnetic field component of the first magnetic field is applied to both the first detection circuit 10 and the second detection circuit 20 , and the second magnetic field component of the second magnetic field is applied to both the first detection circuit 10 and the second detection circuit 20 .

[0203] The magnetic sensor device 1 of the third embodiment may constitute a part of a position detection device that detects the position of an object moving in a predetermined direction. In this case, the magnetic sensor device 1 may be configured to detect a magnetic field generated by a magnet configured to change relative position with the object.

[0204] As described above, the magnetic sensor device of the present invention includes: a magnetic sensor, and a magnetic field generator configured to generate a magnetic field applied to the magnetic sensor. The magnetic field generator includes a conductor layer composed of a conductive material. The conductor layer includes: a first end; a second end; a plurality of main wirings for generating a magnetic field, which are arranged between the first end and the second end and separated from each other; a first sub-wiring that electrically connects the first end and the plurality of main wirings; and a second sub-wiring that electrically connects the second end and the plurality of main wirings.

[0205] The first sub-wiring includes a plurality of first paths from the first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths from the second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first connecting portions branched from the first sub-wiring. Each of the plurality of second paths passes through a plurality of second connecting portions branched from the second sub-wiring. Any two of the plurality of first paths pass through the same number of first connecting portions. Any two of the plurality of second paths pass through the same number of second connecting portions.

[0206] In the magnetic sensor device of the present invention, the number of the plurality of first connecting parts through which the plurality of first paths pass may be the same. Also, the number of the plurality of second connecting parts through which the plurality of second paths pass may be the same.

[0207] In addition, in the magnetic sensor device of the present invention, each of the first sub-wiring and the second sub-wiring may be formed by electrically connecting a plurality of unbranched wiring portions, respectively. Each of the plurality of first connecting portions and the plurality of second connecting portions may include at least one specific connecting portion that electrically connects three wiring portions among the plurality of wiring portions. The plurality of first connecting portions and the plurality of second connecting portions may also be specific connecting portions.

[0208] Furthermore, in the magnetic sensor device of the present invention, the number of the plurality of main wirings may be n, and the total number of the plurality of first connecting portions and the number of the plurality of second connecting portions may be 2(n-1).

[0209] The magnetic sensor device of the present invention may further include: a first electronic component including a magnetic sensor and a second electronic component including a magnetic field generator. Alternatively, the magnetic sensor device of the present invention may further include: an electronic component including a magnetic sensor and a magnetic field generator.

[0210] In addition, in the magnetic sensor device of the present invention, the magnetic sensor and the magnetic field generator may also be stacked along the first direction. The magnetic sensor may also include a plurality of magnetic detection elements. When viewed from the first direction, the plurality of magnetic detection elements may also be arranged between the first sub-wiring and the second sub-wiring in a second direction orthogonal to the first direction.

[0211] In the magnetic sensor device of the present invention, each of the plurality of main wirings may have a shape that is long in one direction and has one end closest to the first end and the other end closest to the second end. The potential difference between one end and the other end of each of the plurality of main wirings may be the same.

[0212] In the magnetic sensor device of the present invention, the conductor layer may include a plurality of paths each having the same length, which are paths extending from the first end to the second end via the first sub-wiring, the plurality of main wirings, and the second sub-wiring.

[0213] In the magnetic sensor device of the present invention, the conductor layer may include a plurality of paths each having the same resistance value, which are paths extending from the first end to the second end via the first sub-wiring, the plurality of main wirings, and the second sub-wiring.

[0214] Furthermore, in the magnetic sensor device of the present invention, the conductor layer may have a shape that is symmetrical about a virtual plane intersecting the first end and the second end.

[0215] In the magnetic sensor device of the present invention, the plurality of main wirings may include a first main wiring, and second and third main wirings adjacent to the first main wiring on both sides. The interval between the first and second main wirings may be the same as the interval between the first and third main wirings.

[0216] In addition, in the magnetic sensor device of the present invention, the magnetic field can also be used to measure the sensitivity of the magnetic sensor. Alternatively, in the magnetic sensor device of the present invention, the magnetic sensor can also include a magnetoresistive effect element. The magnetoresistive effect element can also include: a magnetic layer having a magnetization whose direction can be changed. The magnetic field can also be used to set or reset the direction of the magnetization of the magnetic layer.

[0217] The magnetic field generator of the present invention is configured to generate a magnetic field for inspection applied to a magnetic sensor. The magnetic field generator includes a conductor layer composed of a conductive material. The conductor layer includes: a first end; a second end; a plurality of main wirings, which are used to generate a magnetic field and are arranged between the first end and the second end and separated from each other; a first sub-wiring, which electrically connects the first end and the plurality of main wirings; and a second sub-wiring, which electrically connects the second end and the plurality of main wirings.

[0218] The first sub-wiring includes a plurality of first paths from the first end to each of the plurality of main wirings. The second sub-wiring includes a plurality of second paths from the second end to each of the plurality of main wirings. Each of the plurality of first paths passes through a plurality of first connecting portions branched from the first sub-wiring. Each of the plurality of second paths passes through a plurality of second connecting portions branched from the second sub-wiring. Any two of the plurality of first paths pass through the same number of first connecting portions. Any two of the plurality of second paths pass through the same number of second connecting portions.

[0219] It is clear from the above description that the present invention can be implemented in various forms and modifications. Therefore, within the scope of the equivalents of the claims, the present invention can be implemented in forms other than the best form described above.

Claims

1. A magnetic sensor device, characterized in that: have: Magnetic sensors; and a magnetic field generator configured to generate a magnetic field to be applied to the magnetic sensor, The magnetic field generator comprises a conductor layer made of a conductive material. The conductor layer comprises: First end; The second end; a plurality of main wirings, which are used to generate the magnetic field and are disposed between the first end and the second end and separated from each other; a first secondary wiring line electrically connecting the first end and the plurality of primary wiring lines; as well as a second sub-wiring electrically connecting the second end and the plurality of main wirings, The first sub-wiring includes a plurality of first paths from the first end to each of the plurality of main wirings, The second sub-wiring includes a plurality of second paths from the second end to each of the plurality of main wirings, Each of the plurality of first paths passes through a plurality of first connection portions branched from the first sub-wiring, Each of the plurality of second paths passes through a plurality of second connection portions branched from the second sub-wiring, Any two of the plurality of first paths respectively pass through the same number of the plurality of first connecting parts, Any two of the plurality of second paths pass through the same number of second connecting portions.

2. The magnetic sensor device according to claim 1, characterized in that The number of the first connecting parts through which the first paths pass is the same. The number of the second connecting parts through which the second paths pass is the same.

3. The magnetic sensor device according to claim 1, characterized in that Each of the first sub-wiring and the second sub-wiring is formed by electrically connecting a plurality of unbranched wiring portions, respectively. Each of the plurality of first connection portions and the plurality of second connection portions includes at least one specific connection portion that electrically connects three wiring portions among the plurality of wiring portions.

4. The magnetic sensor device according to claim 3, characterized in that The plurality of first connection portions and the plurality of second connection portions are all the specific connection portions.

5. The magnetic sensor device according to claim 1, characterized in that The number of the plurality of main wirings is n, and the total number of the plurality of first connection portions and the number of the plurality of second connection portions is 2(n-1).

6. The magnetic sensor device according to claim 1, characterized in that Also available: a first electronic component comprising the magnetic sensor; A second electronic component includes the magnetic field generator.

7. The magnetic sensor device according to claim 1, characterized in that The invention further includes an electronic component including the magnetic sensor and the magnetic field generator.

8. The magnetic sensor device according to claim 1, characterized in that The magnetic sensor and the magnetic field generator are stacked along a first direction, The magnetic sensor comprises a plurality of magnetic detection elements. The plurality of magnetic detection elements are arranged between the first sub-wiring and the second sub-wiring in a second direction orthogonal to the first direction when viewed from the first direction.

9. The magnetic sensor device according to claim 1, characterized in that Each of the plurality of main wirings has a shape that is long in one direction and has one end closest to the first end and the other end closest to the second end, The potential difference between the one end and the other end of each of the plurality of main wirings is the same.

10. The magnetic sensor device according to claim 1, characterized in that The conductor layer includes a plurality of paths each having the same length, which are a plurality of paths extending from the first end through the first sub-wiring, the plurality of main wirings, and the second sub-wiring to the second end.

11. The magnetic sensor device according to claim 1, characterized in that The conductor layer includes a plurality of paths having the same resistance value, which are a plurality of paths extending from the first end through the first sub-wiring, the plurality of main wirings, and the second sub-wiring to the second end.

12. The magnetic sensor device according to claim 1, characterized in that The conductive layer has a shape that is symmetrical about a virtual plane that intersects the first end and the second end.

13. The magnetic sensor device according to claim 1, characterized in that The plurality of main wirings include: a first main wiring, and a second main wiring and a third main wiring adjacent to both sides of the first main wiring. The interval between the first main wiring and the second main wiring is the same as the interval between the first main wiring and the third main wiring.

14. The magnetic sensor device according to any one of claims 1 to 13, characterized in that: The magnetic field is used to measure the sensitivity of the magnetic sensor.

15. The magnetic sensor device according to any one of claims 1 to 13, characterized in that: The magnetic sensor includes a magnetoresistive effect element. The magnetoresistance effect element includes: a magnetic layer having magnetization whose direction can be changed; The magnetic field is used to set or reset the direction of the magnetization of the magnetic layer.

16. A magnetic field generator, characterized in that: is configured to generate a magnetic field for inspection to be applied to the magnetic sensor, The magnetic field generator comprises a conductor layer made of a conductive material. The conductor layer comprises: First end; The second end; a plurality of main wirings, which are used to generate the magnetic field and are disposed between the first end and the second end and separated from each other; a first secondary wiring line electrically connecting the first end and the plurality of primary wiring lines; as well as a second sub-wiring electrically connecting the second end and the plurality of main wirings, The first sub-wiring includes a plurality of first paths from the first end to each of the plurality of main wirings, The second sub-wiring includes a plurality of second paths from the second end to each of the plurality of main wirings, Each of the plurality of first paths passes through a plurality of first connection portions branched from the first sub-wiring, Each of the plurality of second paths passes through a plurality of second connection portions branched from the second sub-wiring, Any two of the plurality of first paths respectively pass through the same number of the plurality of first connecting parts, Any two of the plurality of second paths pass through the same number of second connecting portions.

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