Semiconductor process device and application method thereof

Abstract

The invention provides a semiconductor process device and an application method thereof, a partition plate of the device is arranged between a spray head and an electrostatic adsorption chuck, the partition plate and the spray head are connected with each other with an adjustable vertical distance, and the partition plate can move up and down relative to the spray head along a direction perpendicular to the electrostatic adsorption chuck; the projection of the second spraying holes of the partition plate and the projection of the first spraying holes corresponding to the spraying heads on the electrostatic adsorption chuck completely coincide. According to the invention, the vertical distance between the partition plate and the spray head is adjustable, so that the formed plasma concentration distribution is adjusted, and the movement path of the reaction gas is increased, so that the etching gas is mixed more uniformly, and the surface uniformity of the etched wafer is improved; meanwhile, the partition plate completely coinciding with the spraying holes of the spraying head is arranged below the spraying head, by-products splashed to the lower surface of the spraying head can be prevented from being accumulated, and therefore damage to the spraying head is reduced, and the cleaning requirement is met; in addition, the partition plate is detachably connected with the spraying head so that the partition plate can be detached and replaced, and the cleaning efficiency of accumulated by-products is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor integrated circuit manufacturing, and in particular relates to a semiconductor process device and an application method thereof. Background Art

[0002] In dry etching, CF-based gas is often radio-frequency-dissociated into plasma, which reacts with the wafer to be processed to etch out grooves, holes and other shapes.

[0003] During the plasma reaction, byproducts are generated. If the generated byproducts are not discharged in time, they will continue to accumulate on the components in the plasma reaction chamber. The byproducts that eventually adhere to the surface of the shower head will damage the shower head. It takes a lot of time to clean the byproducts remaining on the shower head during machine maintenance (PM). The capacity loss caused by the downtime caused by the cleaning needs is also very obvious, which is easy to affect the process efficiency and capacity of dry etching.

[0004] At the same time, the concentration distribution of the plasma generated by RF dissociation also has a great influence on the uniformity of the wafer surface obtained after dry etching. When the plasma concentration generated near the center of the wafer is higher than that generated at the edge, the dry etching rate of the wafer at the center and edge will be different, resulting in poor uniformity of the etched surface obtained after dry etching at the center and edge of the wafer, affecting the final product performance.

[0005] Therefore, there is an urgent need for a structure or method that can reduce the cleaning requirements of the shower head in a dry etching device and improve the uniformity of the dry etching.

[0006] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology part of the present application. Summary of the invention

[0007] In view of the above shortcomings of the prior art, an object of the present invention is to provide a semiconductor process device and an application method thereof, so as to solve the problems of low cleaning efficiency of the shower head and poor uniformity of dry etching in the dry etching equipment in the prior art.

[0008] To achieve the above object, the present invention provides a semiconductor process device, the semiconductor process device comprising: a shower head, a partition, an electrostatic adsorption chuck, a first electrode and a second electrode;

[0009] The partition is located between the spray head and the electrostatic adsorption chuck, the spray head is fixedly connected to the first electrode, the electrostatic adsorption chuck is fixedly connected to the second electrode, and the electrostatic adsorption chuck is used to place the wafer to be processed; the partition and the spray head are connected at an adjustable vertical distance, and the partition can move up and down relative to the spray head along a direction perpendicular to the electrostatic adsorption chuck; the spray head is provided with first spray holes, and the partition is provided with second spray holes, and the projections of the second spray holes of the partition and the first spray holes corresponding to the spray head on the electrostatic adsorption chuck are completely overlapped.

[0010] Optionally, the partition and the shower head are detachably connected.

[0011] Optionally, the partition is detachably connected to the shower head via two or more detachable buckles, and the detachable buckles are evenly distributed along the edge of the shower head.

[0012] Optionally, each of the detachable buckles includes a first buckle and a second buckle, the first buckle is fixedly connected to the sprinkler head, and the first buckle is detachably buckled with the second buckle;

[0013] A slide rail is fixed in the second fastener along a direction perpendicular to the electrostatic adsorption chuck, and an extension arm is fixed to the edge of the partition along a direction perpendicular to the electrostatic adsorption chuck; the extension arm and the slide rail are slidably connected to make the vertical distance between the spray head connected by the first fastener and the second fastener and the partition fixedly connected to the extension arm adjustable.

[0014] Optionally, the second fastener comprises a first portion and a second portion, and the first portion and the second portion are fixedly connected in an "L" shape;

[0015] There is a gap between the first electrode and the surface of the shower head away from the partition, and the first clip is fixed to the surface edge of the shower head in the gap; the first clip and the gap constitute a locking positioning groove of the detachable clip, and the first part of the second clip can be inserted into the locking positioning groove and locked in position, so that the first clip and the second clip are detachably snap-connected; the slide rail is fixed in the second part of the second clip.

[0016] Optionally, a driving structure and a braking structure are provided between the extension arm and the slide rail, the driving structure is used to drive the extension arm to move on the slide rail, and the braking structure is used to apply resistance to the movement of the extension arm on the slide rail to stop the extension arm from moving on the slide rail.

[0017] Optionally, each of the detachable buckles includes a first buckle and a second buckle, the first buckle is fixedly connected to the sprinkler head, and the first buckle is detachably buckled with the second buckle;

[0018] The semiconductor process device also includes a retractable structure, and the second clip is fixedly connected to one end of the retractable structure; an extension arm is fixed to the edge of the partition along a direction perpendicular to the electrostatic adsorption chuck, and the extension arm of the partition is fixedly connected to the other end of the retractable structure; the extension and retraction of the retractable structure can make the vertical distance between the second clip and the extension arm adjustable, so that the vertical distance between the spray head connected by the first clip and the second clip and the partition fixedly connected to the extension arm can be adjusted.

[0019] Optionally, a switch structure is provided corresponding to the second spray hole of the partition, and the switch structure is used to control the switching state of the corresponding second spray hole; and / or, a diverter plate is provided corresponding to the second spray hole of the partition, and the diverter plate is rotatably connected to the second spray hole, and the diverter plate is used to control the direction of the reaction gas sprayed from the second spray hole.

[0020] Optionally, the semiconductor process device is a plasma etching device, and the semiconductor process device also includes a first RF power supply and a second RF power supply, the first RF power supply is located above the shower head, and the second RF power supply is located below the electrostatic adsorption chuck, and the first RF power supply and the second RF power supply are used to provide RF power to the first electrode and the second electrode respectively, so as to form plasma between the shower head and the electrostatic adsorption chuck to perform plasma etching on the wafer to be processed placed on the electrostatic adsorption chuck.

[0021] The present invention also provides an application method of a semiconductor process device, the application method is used to use any of the semiconductor process devices described above, the application method comprising:

[0022] When the thickness of the wafer to be processed in the edge region after being processed by the semiconductor process device is higher than that in the central region, the partition is moved in a direction perpendicular to the electrostatic adsorption chuck to reduce the vertical distance between the partition and the electrostatic adsorption chuck;

[0023] When the thickness of the wafer to be processed in the edge region after being processed by the semiconductor process device is lower than that in the central region, the partition is moved in a direction perpendicular to the electrostatic adsorption chuck to increase the vertical distance between the partition and the electrostatic adsorption chuck;

[0024] When the partition plate is detachably connected to the shower head, the partition plate is regularly removed from the shower head according to a preset period, and a new partition plate is detachably connected to the shower head with an adjustable vertical distance.

[0025] As described above, the semiconductor process device and the application method thereof of the present invention have the following beneficial effects:

[0026] The present invention uses the adjustable vertical distance connection between the partition and the shower head to adjust the plasma concentration distribution, and increases the movement distance of the reaction gas, so that the etching gas is mixed more evenly, and the surface uniformity of the wafer after etching is improved;

[0027] The present invention provides a partition under the shower head that completely overlaps with its shower hole, so that the partition can block the accumulation of reaction byproducts sputtered to the lower surface of the shower head, thereby reducing damage to the shower head and reducing the need for cleaning the shower head, thereby increasing the service life of the semiconductor process device;

[0028] The present invention enables the partition to be directly disassembled and replaced through the detachable connection between the partition and the spray head, thereby improving the cleaning efficiency of the accumulated by-products. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Shown is a schematic diagram of the internal structure of a plasma reaction chamber for dry etching in the prior art.

[0030] Figure 2 Shown is a schematic diagram of a front cross-sectional view of the structure of a semiconductor process device in Example 1 of the present invention.

[0031] Figure 3 It is a schematic side cross-sectional view of the structure of the connection between the partition and the shower head of the semiconductor process device in Example 1 of the present invention.

[0032] Figure 4 It is a schematic top view of the structure of the connection between the partition and the shower head of the semiconductor process device in Example 1 of the present invention.

[0033] Figure 5 It is a schematic diagram of a structure in which a partition plate and a shower head are at an appropriate vertical distance in an application method of a semiconductor process device in Embodiment 1 of the present invention.

[0034] Figure 6 It is a schematic diagram showing the structure after the partition slides downward in the application method of the semiconductor process device in Example 1 of the present invention.

[0035] Figure 7 It is a schematic diagram of the structure presented after the partition slides upward in the application method of the semiconductor process device in Example 1 of the present invention.

[0036] Component number description

[0037] 1. Spray head; 2. Partition; 21. Second spray hole; 22. First fastener; 23. Slide rail; 24. Second fastener; 241. First portion; 242. Second portion; 25. Extension arm; 26. Gap; 27. Locking positioning groove; 31. First RF power supply; 32. Second RF power supply; 33. Electrostatic adsorption chuck; 34. Wafer; 35. Plasma; 36. Ion sheath; 37. Reaction gas; 38. First electrode. DETAILED DESCRIPTION

[0038] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0039] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the schematic diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0040] For convenience of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings.

[0041] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0042] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0043] like Figure 1FIG. 1 is a schematic diagram of the internal structure of a chamber for plasma 35 reaction of dry etching in the prior art, wherein a first RF power source 31 and a second RF power source 32 provide RF power to a shower head 1 fixedly connected to a first electrode 38 and an electrostatic chuck 33 (ESC, Electrostatic Chuck) fixedly connected to a second electrode, so as to form an electric field between the shower head 1 and the electrostatic chuck 33, thereby applying RF power to the shower head 1. The reaction gas 37 ejected by the shower head 1 is subjected to radio frequency dissociation to generate plasma 35 (plasma) and form an ion sheath 36; by-products are generated in the process. If they are not discharged in time, they are likely to accumulate and eventually adhere to the surface of the shower head 1, causing damage to the shower head 1. It takes a long time to clean the by-products remaining on the shower head 1, and the production capacity loss caused by the shutdown is also obvious, which is easy to affect the process efficiency and production capacity of the dry etching; at the same time, the concentration distribution of the plasma 35 generated by radio frequency dissociation will also affect the distribution of the dry etching rate of the wafer 34 at the center and edge positions. If the difference in the concentration distribution of the generated plasma 35 is too large, the uniformity of the etched surface finally obtained after dry etching at the center and edge positions of the wafer 34 will be poor, affecting the final product performance.

[0044] Embodiment 1:

[0045] This embodiment provides a semiconductor process device, such as Figure 2 The figure shows a front cross-sectional view of the semiconductor process device, which includes: a shower head 1, a partition 2, an electrostatic adsorption chuck 33, a first electrode 38 and a second electrode;

[0046] The partition 2 is located between the spray head 1 and the electrostatic adsorption chuck 33, the spray head 1 is fixedly connected to the first electrode 38, the electrostatic adsorption chuck 33 is fixedly connected to the second electrode, and the electrostatic adsorption chuck 33 is used to place the wafer 34 to be processed; the partition 2 and the spray head 1 are connected at an adjustable vertical distance, and the partition 2 can move up and down relative to the spray head 1 along a direction perpendicular to the electrostatic adsorption chuck 33; the spray head 1 is provided with first spray holes, and the partition 2 is provided with second spray holes 21, and the projections of the second spray holes 21 of the partition 2 and the first spray holes corresponding to the spray head 1 on the electrostatic adsorption chuck 33 are completely overlapped.

[0047] The present invention utilizes the connection relationship between the partition 2 and the shower head 1 with an adjustable vertical distance to adjust the concentration distribution of the plasma 35 formed between the partition 2 and the electrostatic adsorption chuck 33, thereby improving the surface uniformity of the wafer 34 after etching; at the same time, by arranging a partition 2 including a second spray hole 21 that completely overlaps with the first spray hole of the shower head 1 below the shower head 1, the partition 2 can block the accumulation of reaction by-products sputtered to the lower surface of the shower head 1, thereby reducing the damage of the residual by-products to the shower head 1, and greatly reducing the cleaning frequency of the shower head 1, reducing downtime, and improving the production efficiency and service life of the semiconductor process equipment; finally, by utilizing the connection relationship between the partition 2 and the shower head 1 with an adjustable vertical distance, when the partition 2 slides downward in a direction perpendicular to the electrostatic adsorption chuck 33, the movement distance of the plasma etching reaction gas 37 before being dissociated can be increased, thereby making the etching gas mixed more evenly.

[0048] Specifically, the second electrode is located in the electrostatic adsorption chuck 33. Figure 2 The second electrode is not shown.

[0049] In one embodiment, the partition plate 2 and the shower head 1 are detachably connected.

[0050] In the present invention, the partition plate 2 is detachably connected to the shower head 1, so that the partition plate 2 can be directly disassembled and replaced, thereby further improving the cleaning efficiency of the accumulated by-products.

[0051] In one embodiment, the partition plate 2 is detachably connected to the shower head 1 via two or more detachable buckles.

[0052] The present invention provides a detachable connection between the partition 2 and the shower head 1 through a detachable buckle, thereby achieving the fixation and detachability of the partition 2 with a simple structure, and realizing low cost and convenience in the installation of the partition 2. Specifically, the partition 2 and the shower head 1 can also be detachably connected through other suitable structures, all of which are within the protection scope of the present invention.

[0053] In one embodiment, the partition 2 is detachably connected to the shower head 1 via two or more detachable buckles, and the detachable buckles are evenly distributed along the edge of the shower head 1 .

[0054] The present invention can improve the stability of the partition 2 and the shower head 1 when they are fixed by providing a plurality of evenly distributed detachable buckles, so as to ensure the reliability and horizontality of the installation of the partition 2 and improve the accuracy of the transmission direction of the partition 2 to the reaction gas 37 sprayed by the shower head 1.

[0055] In one embodiment, Figure 3-Figure 4 As shown, Figure 3It is a side cross-sectional view of the connection between the partition 2 and the sprinkler head 1. Figure 4 It is a top view of the connection between the partition 2 and the sprinkler head 1, as shown Figure 4 As shown, the partition plate 2 and the shower head 1 are detachably connected via four detachable buckles.

[0056] In one embodiment, Figure 3 As shown, each of the detachable buckles includes a first buckle 22 and a second buckle 24, the first buckle 22 is fixedly connected to the sprinkler head 1, and the first buckle 22 and the second buckle 24 are detachably buckled;

[0057] A slide rail 23 is fixed in the second fastener 24 along a direction perpendicular to the electrostatic adsorption chuck 33, and an extension arm 25 is fixed at the edge of the partition 2 along a direction perpendicular to the electrostatic adsorption chuck 33; the extension arm 25 is slidably connected to the slide rail 23, so that the vertical distance between the spray head 1 connected by the first fastener 22 and the second fastener 24 and the partition 2 fixedly connected to the extension arm 25 is adjustable.

[0058] In one embodiment, Figure 3 As shown, the second fastener 24 includes a first portion 241 and a first portion 242, and the first portion 241 and the first portion 242 are fixedly connected in an "L" shape;

[0059] There is a gap 26 between the first electrode 38 and the surface of the shower head 1 away from the partition 2, and the first clip 22 is fixed to the surface edge of the shower head 1 in the gap 26; the first clip 22 and the gap 26 constitute a locking positioning groove 27 of the detachable clip, and the first part 241 of the second clip 24 can be inserted into the locking positioning groove 27 and locked in position, so that the first clip 22 and the second clip 24 can be detachably snap-connected; the slide rail 23 is fixed in the first part 242 of the second clip 24.

[0060] In one embodiment, a driving structure and a braking structure are provided between the extension arm 25 and the slide rail 23, the driving structure is used to drive the extension arm 25 to move on the slide rail 23, and the braking structure is used to apply resistance to the movement of the extension arm 25 on the slide rail 23 to stop the extension arm 25 from moving on the slide rail 23.

[0061] In one embodiment, the braking structure can achieve that when the partition 2 is not driven, the partition 2 can stay stably at its position by setting the resistance applied by the extension arm 25 when moving on the slide rail 23.

[0062] The present invention uses a braking structure to brake the extension arm 25 to ensure the position accuracy of the partition 2 fixedly connected to the extension arm 25 when sliding on the slide rail 23 in the first part 242 of the second fastener 24 .

[0063] Specifically, the partition plate 2 and the shower head 1 may also be connected with each other in a vertically adjustable manner through various other suitable structures, all of which are within the protection scope of the present invention.

[0064] In one embodiment, a switch structure is correspondingly provided on the second spray hole 21 of the partition plate 2 , and the switch structure is used to control the switch state of the corresponding second spray hole 21 .

[0065] The present invention can control the switch state of the second spray hole 21 by setting a switch structure for the second spray hole 21, so that the effect of performing partitioned plasma etching on the wafer 34 to be processed can be achieved under certain circumstances.

[0066] In one embodiment, each second spray hole 21 of the partition plate 2 is correspondingly provided with a switch structure to independently adjust the switch state of each second spray hole 21 .

[0067] In one embodiment, the second spray holes 21 in a partial area of ​​the partition plate 2 are controlled by the same switch structure, so as to achieve unified adjustment of the switch states of the second spray holes 21 using the same switch structure.

[0068] The present invention arranges the second spray holes 21 in a partial area of ​​the partition 2 to be controlled by the same switch structure, thereby reducing the space and weight occupied by the switch structure, which is beneficial to the miniaturization and lightweight of semiconductor process equipment. At the same time, in practical applications, it is also more in line with the application requirements of partitioned controlled plasma etching, reducing control costs and power, and improving control efficiency.

[0069] In one embodiment, a diverter plate is provided corresponding to the second spray hole 21 of the partition plate 2 , and the diverter plate is rotatably connected to the second spray hole 21 . The diverter plate is used to control the direction of the reaction gas 37 sprayed from the second spray hole 21 .

[0070] The present invention controls the direction of the reaction gas 37 sprayed from the second spray hole 21 by setting a diverter plate, and can further adjust the concentration distribution of the plasma 35 formed between the partition 2 and the electrostatic adsorption chuck 33, thereby further improving the surface uniformity of the wafer 34 after etching.

[0071] In one embodiment, Figure 2As shown, the semiconductor process device is a plasma etching device, and the semiconductor process device also includes a first RF power supply 31 and a second RF power supply 32, wherein the first RF power supply 31 is located above the shower head 1, and the second RF power supply 32 is located below the electrostatic adsorption chuck 33, and the first RF power supply 31 and the second RF power supply 32 are used to provide RF power to the first electrode 38 and the second electrode respectively, so as to form a plasma 35 between the shower head 1 and the electrostatic adsorption chuck 33 to perform plasma etching on the wafer 34 to be processed placed on the electrostatic adsorption chuck 33. Specifically, the plasma etching device is a capacitively coupled plasma etching (CCPE, Capacitively Coupled Plasma Etch) device.

[0072] In one embodiment, the plasma etching device may also be an inductively coupled plasma etching (ICPE) device that uses a coil to generate plasma 35, and may also play a role in preventing by-products from accumulating in the shower head 1, but the position distribution of each component needs to be adjusted according to the needs of ICPE; at the same time, the concentration distribution effect of ICPE on the generated plasma 35 is poorer than that of the CCPE device.

[0073] Specifically, the present application focuses on solving the problem of uneven etching surface caused by the adhesion of by-products to the shower head 1 in the plasma etching device and the large difference in the concentration distribution of the plasma 35. However, other shower heads 1 for providing reaction gas 37 for various processes such as other deposition that need to avoid surface adhesion can also be used as needed. It can also play a role in regulating the surface uniformity of the wafer 34 to be processed, all of which are within the scope of protection of the present invention.

[0074] The present embodiment also provides an application method of a semiconductor process device, and the application method is used to use any of the semiconductor process devices described above. The application method of the semiconductor process device of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that the above sequence does not strictly represent the sequence of the application method of the semiconductor process device protected by the present invention, and those skilled in the art may change it according to the actual use steps.

[0075] The application method of the semiconductor process device comprises:

[0076] like Figure 5 The figure shows a case where the vertical distance between the partition 2 and the sprinkler head 1 is moderate, and the vertical distance between the partition 2 and the sprinkler head 1 is L1;

[0077] When the thickness of the wafer 34 to be processed after being processed by the semiconductor process device is greater in the edge region than in the center region, as shown in FIG. Figure 6 As shown, the extension arm 25 slides downward in the slide rail 23 along a direction perpendicular to the electrostatic adsorption chuck 33, so that the vertical distance between the partition plate 2 and the electrostatic adsorption chuck 33 is reduced, and the vertical distance between the partition plate 2 and the shower head 1 is L3, L3>L1;

[0078] When the thickness of the wafer 34 to be processed after being processed by the semiconductor process device is lower in the edge region than in the center region, as shown in FIG. Figure 7 As shown, the extension arm 25 slides upward in the slide rail 23 in a direction perpendicular to the electrostatic adsorption chuck 33, so that the vertical distance between the partition 2 and the electrostatic adsorption chuck 33 increases, and the vertical distance between the partition 2 and the shower head 1 is L2, L2 <L1;

[0079] The snap connection between the first snap member 22 and the second snap member 24 is periodically unlocked according to a preset period, the partition 2 is removed from the shower head 1, and a new partition 2 is detachably and slidably connected to the shower head 1.

[0080] In one embodiment, after the driving structure drives the extension arm 25 fixedly connected to the partition 2 to a preset position of the slide rail 23, the braking structure fixes the extension arm 25 at this position of the slide rail 23 to ensure that the relative positions of the partition 2 and the shower head 1 are fixed during the process.

[0081] Embodiment 2:

[0082] This embodiment provides a semiconductor process device, and other features of the semiconductor process device are the same as those of the semiconductor process device described in Embodiment 1, except that:

[0083] Each of the detachable buckles comprises a first buckle and a second buckle, wherein the first buckle is fixedly connected to the sprinkler head, and the first buckle is detachably buckled with the second buckle;

[0084] The semiconductor process device also includes a retractable structure, and the second clip is fixedly connected to one end of the retractable structure; an extension arm is fixed to the edge of the partition along a direction perpendicular to the electrostatic adsorption chuck, and the extension arm of the partition is fixedly connected to the other end of the retractable structure; the extension and retraction of the retractable structure can make the vertical distance between the second clip and the extension arm adjustable, so that the vertical distance between the spray head connected by the first clip and the second clip and the partition fixedly connected to the extension arm can be adjusted.

[0085] The present invention realizes a vertical distance adjustable connection between a shower head and a partition plate through a telescopic structure, which is another available solution for the vertical distance adjustable connection.

[0086] In one embodiment, the telescopic structure is a telescopic tube structure, a scissor-type telescopic structure, a telescopic piston hydraulic cylinder or other telescopic structures that can achieve telescopic length control.

[0087] Specifically, the telescopic tube structure is composed of a series of nested pipes, and its telescopic length can be changed by pushing and pulling the nested pipes; the scissor-type telescopic structure realizes telescopic movement through crossed hinges and connecting rods, and the hinges are rotated to change the hinge crossing angle to achieve telescopic movement of the entire length; the telescopic piston hydraulic cylinder changes the length of the piston rod extending out of the hydraulic cylinder by changing the pressure in the hydraulic cylinder, thereby achieving telescopic movement of the entire length.

[0088] This embodiment also provides an application method of a semiconductor process device, and the application method is used to use any of the semiconductor process devices described above. The application method of the semiconductor process device of the present invention will be described in detail below. It should be noted that the above sequence does not strictly represent the sequence of the application method of the semiconductor process device protected by the present invention, and those skilled in the art may change it according to the actual use steps.

[0089] The application method of the semiconductor process device comprises:

[0090] When the vertical distance between the partition and the sprinkler head is moderate, the vertical distance between the partition and the sprinkler head is L1;

[0091] When the thickness of the wafer to be processed in the edge area after being processed by the semiconductor process device is higher than that in the central area, the retractable structure connected between the extension arm and the second fastener is extended, so that the extension arm drives the partition to move downward relative to the shower head (because the second fastener is snap-connected with the first fastener, and the first fastener is fixedly connected with the shower head), the vertical distance between the partition and the electrostatic adsorption chuck is reduced, and the vertical distance between the partition and the shower head is L3, L3>L1;

[0092] When the thickness of the wafer to be processed in the edge area after being processed by the semiconductor process device is lower than that in the central area, the retractable structure connected between the extension arm and the second fastener contracts, so that the extension arm drives the partition to move upward relative to the shower head (because the second fastener is snap-connected with the first fastener, and the first fastener is fixedly connected to the shower head), and the vertical distance between the partition and the electrostatic adsorption chuck increases. The vertical distance between the partition and the shower head is L2, and L2 <L1;

[0093] The snap connection between the first snap member and the second snap member is unlocked regularly according to a preset cycle, the partition is removed from the shower head, and a new partition is detachably connected to the shower head through a detachable snap structure and a retractable structure with an adjustable vertical distance.

[0094] In one embodiment, after the driving structure drives the telescopic structure to a preset length so that the extension arm fixedly connected to the partition is driven to a preset position, the braking structure fixes the telescopic structure at the preset length so that the extension arm is fixed at the position, thereby ensuring that the relative position of the partition and the sprinkler head is fixed during the process.

[0095] In summary, the semiconductor process device and application method thereof of the present invention can utilize the connection with an adjustable vertical distance between the partition and the shower head to adjust the plasma concentration distribution formed, and increase the movement distance of the reaction gas, so that the etching gas is mixed more evenly, and the surface uniformity of the wafer after etching is improved; at the same time, by arranging a partition under the shower head that completely overlaps with its shower hole, the partition can block the accumulation of reaction by-products sputtered to the lower surface of the shower head, thereby reducing damage to the shower head, and reducing the need for cleaning the shower head, thereby improving the service life of the semiconductor process device; in addition, through the detachable connection between the partition and the shower head, the partition can be directly disassembled and replaced, thereby improving the cleaning efficiency of the accumulated by-products.

[0096] Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0097] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A semiconductor process device, characterized in that: The semiconductor process device comprises: a shower head, a partition, an electrostatic adsorption chuck, a first electrode and a second electrode; The partition is located between the spray head and the electrostatic adsorption chuck, the spray head is fixedly connected to the first electrode, the electrostatic adsorption chuck is fixedly connected to the second electrode, and the electrostatic adsorption chuck is used to place the wafer to be processed; the partition and the spray head are connected at an adjustable vertical distance, and the partition can move up and down relative to the spray head along a direction perpendicular to the electrostatic adsorption chuck; the spray head is provided with first spray holes, and the partition is provided with second spray holes, and the projections of the second spray holes of the partition and the first spray holes corresponding to the spray head on the electrostatic adsorption chuck are completely overlapped.

2. The semiconductor process device according to claim 1, characterized in that: The partition plate and the shower head are detachably connected.

3. The semiconductor process device according to claim 2, characterized in that: The partition is detachably connected to the shower head via more than two detachable buckles, and the detachable buckles are evenly distributed along the edge of the shower head.

4. The semiconductor process device according to claim 3, characterized in that: Each of the detachable buckles comprises a first buckle and a second buckle, wherein the first buckle is fixedly connected to the sprinkler head, and the first buckle is detachably buckled with the second buckle; A slide rail is fixed in the second fastener along a direction perpendicular to the electrostatic adsorption chuck, and an extension arm is fixed to the edge of the partition along a direction perpendicular to the electrostatic adsorption chuck; the extension arm and the slide rail are slidably connected to make the vertical distance between the spray head connected by the first fastener and the second fastener and the partition fixedly connected to the extension arm adjustable.

5. The semiconductor process device according to claim 4, characterized in that: The second fastener comprises a first portion and a second portion, wherein the first portion and the second portion are fixedly connected in an "L" shape; There is a gap between the first electrode and the surface of the shower head away from the partition, and the first clip is fixed to the surface edge of the shower head in the gap; the first clip and the gap constitute a locking positioning groove of the detachable clip, and the first part of the second clip can be inserted into the locking positioning groove and locked in position, so that the first clip and the second clip are detachably snap-connected; the slide rail is fixed in the second part of the second clip.

6. The semiconductor process device according to claim 5, characterized in that: A driving structure and a braking structure are provided between the extension arm and the slide rail, wherein the driving structure is used to drive the extension arm to move on the slide rail, and the braking structure is used to apply resistance to the movement of the extension arm on the slide rail to stop the extension arm from moving on the slide rail.

7. The semiconductor process device according to claim 3, characterized in that: Each of the detachable buckles comprises a first buckle and a second buckle, wherein the first buckle is fixedly connected to the sprinkler head, and the first buckle is detachably buckled with the second buckle; The semiconductor process device also includes a retractable structure, and the second clip is fixedly connected to one end of the retractable structure; an extension arm is fixed to the edge of the partition along a direction perpendicular to the electrostatic adsorption chuck, and the extension arm of the partition is fixedly connected to the other end of the retractable structure; the extension and retraction of the retractable structure can make the vertical distance between the second clip and the extension arm adjustable, so that the vertical distance between the spray head connected by the first clip and the second clip and the partition fixedly connected to the extension arm can be adjusted.

8. The semiconductor process device according to claim 1, characterized in that: A switch structure is correspondingly provided at the second spray hole of the partition, and the switch structure is used to control the switch state of the corresponding second spray hole; And / or, a diverter plate is provided corresponding to the second spray hole of the partition, the diverter plate is rotatably connected to the second spray hole, and the diverter plate is used to control the direction of the reaction gas sprayed from the second spray hole.

9. The semiconductor process device according to claim 1, characterized in that: The semiconductor process device is a plasma etching device, and the semiconductor process device also includes a first RF power supply and a second RF power supply. The first RF power supply is located above the shower head, and the second RF power supply is located below the electrostatic adsorption chuck. The first RF power supply and the second RF power supply are used to provide RF power to the first electrode and the second electrode respectively, so as to form plasma between the shower head and the electrostatic adsorption chuck to perform plasma etching on the wafer to be processed placed on the electrostatic adsorption chuck.

10. An application method of a semiconductor process device, characterized in that: The application method is used to use the semiconductor process device according to any one of claims 1 to 9, and the application method comprises: When the thickness of the wafer to be processed in the edge region after being processed by the semiconductor process device is higher than that in the central region, the partition is moved in a direction perpendicular to the electrostatic adsorption chuck to reduce the vertical distance between the partition and the electrostatic adsorption chuck; When the thickness of the wafer to be processed in the edge region after being processed by the semiconductor process device is lower than that in the central region, the partition is moved in a direction perpendicular to the electrostatic adsorption chuck to increase the vertical distance between the partition and the electrostatic adsorption chuck; When the partition plate is detachably connected to the shower head, the partition plate is regularly removed from the shower head according to a preset period, and a new partition plate is detachably connected to the shower head with an adjustable vertical distance.

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