Efficient heating device for semiconductor production

Abstract

The invention relates to the field of semiconductor heating, and particularly discloses an efficient heating device for semiconductor production, which comprises a heating module, an equipment module and a bearing platform, and is characterized in that the equipment module is internally provided with a low-speed driving motor, a vacuum device and a nitrogen pressurizing device; the top of the equipment module is provided with a bearing platform, the bearing platform is provided with a semiconductor tray, and the surface of the bearing platform is provided with a PI high-temperature hot melting aluminum substrate; an upper cover plate is arranged on the upper portion of the heating module and connected with one side of the top of the equipment module through a connecting piece and a connecting plate, electric telescopic rods are arranged on the two sides of the upper cover plate and the two sides of the equipment module, a heating furnace is arranged on the lower portion of the heating module, a top heating lamp is arranged on the top of the heating furnace, and edge heating lamps are arranged on the edges of the heating furnace. The heating furnace is connected with the vacuum device through a first pipeline and connected with the nitrogen pressurizing device through a second pipeline. The light heating device solves the problems that an existing light heating device is uneven in heating, and a semiconductor is prone to deformation.

Description

Technical Field

[0001] The invention relates to the field of semiconductor heating, in particular to a high-efficiency heating device used for semiconductor production. Background Art

[0002] In the modern semiconductor manufacturing process, photothermal treatment is a crucial process used in semiconductor annealing, thin film deposition and curing, dopant activation and other links. However, the existing photothermal treatment technology still faces many challenges, especially the two major problems of uneven heating and insufficient sealing, which directly affect the quality and reliability of semiconductor devices.

[0003] In the process of semiconductor photothermal treatment, the light source is the key factor in providing energy for heating. However, the energy distribution of the commonly used light sources is often uneven, that is, the energy density at the center of the beam is high, while the energy density at the edge is low. When this laser beam with uneven energy distribution is irradiated on the surface of the semiconductor material, the energy received at different positions on the semiconductor surface will be very different, resulting in uneven heating. For example, when a large area of ​​semiconductor is subjected to photothermal treatment, the central area may be overheated due to excessive energy received, while the edge area may be insufficiently heated due to insufficient energy. At the same time, uneven heating will cause the performance of semiconductor materials to differ in different areas. For example, after photothermal treatment, excessive lattice damage may occur in the overheated area, resulting in an increase in carrier recombination centers, thereby reducing the carrier lifetime and mobility. The underheated area may not achieve the expected modification effect, such as the bandgap width is not adjusted properly, which will affect the consistency of the electrical and optical properties of the entire semiconductor device. When manufacturing large-scale integrated circuits, this performance inconsistency may lead to a decrease in the yield of the chip and increase production costs.

[0004] At the same time, in the photothermal treatment process, it is necessary to carry out in a specific gas environment, such as inert gases such as nitrogen and argon, to prevent oxidation of the semiconductor surface or other adverse reactions. If the airtightness of the heating device is not good enough, gas leakage will occur, which will not only waste precious gas resources, but also may affect the effect of the process due to the intrusion of ambient gas. Especially when high-temperature treatment is required, the risk of gas leakage is greater. The open or semi-open design makes it easy for pollutants such as particles and moisture in the outside air to enter the treatment area. Once these pollutants adhere to the surface of the semiconductor, they will seriously affect the performance of the device. In addition, oxygen in the air may also cause oxidation of the semiconductor surface, affecting the quality of subsequent processes. In addition, the non-enclosed heating space is not only prone to gas leakage, but also causes a large amount of heat loss. The loss of heat not only wastes energy, but also makes the heating process unstable and difficult to accurately control the temperature. Especially in application scenarios that require rapid heating or cooling, the problem of heat loss is particularly serious. Summary of the invention

[0005] The purpose of the present invention is to provide an efficient heating device for semiconductor production, which is used to solve the problems of uneven heating effect and poor airtightness of the existing semiconductor light heating devices, which lead to deformation of the semiconductor and pollution of the external environment during processing.

[0006] To achieve the above-mentioned purpose, the present invention proposes a high-efficiency heating device for semiconductor production, an equipment module, a heating module and a carrying platform, wherein a low-speed drive motor, a vacuum device and a nitrogen pressurizing device are arranged inside the equipment module; the carrying platform is arranged on the top of the equipment module, and a semiconductor tray is arranged in the middle of the carrying platform; the upper part of the heating module is an upper cover plate, and the lower part of the heating module is a heating furnace, and the upper cover plate and the heating furnace are fixedly connected together.

[0007] Preferably, a control panel is provided on the front surface of the equipment module, and the low-speed drive motor is connected to the semiconductor tray via a transmission shaft.

[0008] Preferably, the vacuum device is connected to the heating furnace via a first pipeline, and the nitrogen pressurizing device is connected to the heating furnace via a second pipeline.

[0009] Preferably, connecting plates are provided on both sides of the upper cover plate, the connecting plates are fixedly connected to the upper cover plate, connecting pieces are provided at both ends of one side of the top surface of the equipment module, and one end of the connecting plate and the connecting piece are movably connected by bolts.

[0010] Preferably, electric telescopic rods are also provided on both sides of the upper cover plate, one end of the electric telescopic rod is movably connected to the upper cover plate, and the other end of the electric telescopic rod is provided on both sides of the top surface of the equipment module and is movably connected to the top of the equipment module.

[0011] Preferably, the heating furnace is circular, and a first annular groove is provided on its inner surface; a top heating lamp is provided on the top of the heating furnace, and an edge heating lamp is provided on the edge of the heating furnace.

[0012] Preferably, the top heating lamp faces the front side of the semiconductor tray, and the edge heating lamp faces the side side of the semiconductor tray.

[0013] Preferably, the semiconductor tray is circular, and is provided with an annular sealing baffle around it, and an annular sealing ring is provided on the top of the sealing baffle, and the height of the sealing baffle is lower than the height of the semiconductor tray.

[0014] Preferably, a PI high-temperature hot-melt aluminum substrate is provided on the upper surface of the semiconductor tray, and a limiting column is provided on the surface of the PI high-temperature hot-melt aluminum substrate.

[0015] Preferably, the PI high-temperature hot-melt aluminum substrate is circular, and is evenly arranged on the semiconductor tray, with a number of 5; the limiting columns are evenly arranged on the upper surface of the PI high-temperature hot-melt aluminum substrate, with a number of 4.

[0016] Therefore, the present invention proposes an efficient heating device for semiconductor production, which has the following beneficial effects: (1) The present invention solves the problem of uneven heating of semiconductors, can greatly reduce the risk of deformation caused by local overheating or overcooling, and avoids the problem of deformation of semiconductor equipment due to uneven heating. It not only improves production efficiency, but also saves production costs, bringing significant economic benefits and competitive advantages to semiconductor manufacturers; (2) The present invention solves the problem of the existing integrated light box that the edge of the semiconductor cannot be heated, and can effectively ensure that the semiconductor is heated evenly, thereby avoiding the problem of deformation of the semiconductor caused by uneven heating.

[0017] (3) The present invention solves the problem of external impurity contamination during the semiconductor heating process. At the same time, the closed system can reduce heat loss and improve heating efficiency, thereby improving the temperature stability during the heating process.

[0018] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the overall front appearance of a high-efficiency heating device for semiconductor production according to the present invention; Figure 2 It is a schematic diagram of the overall appearance of the rear of a high-efficiency heating device for semiconductor production according to the present invention; Figure 3 It is a schematic diagram of the interior of an equipment module of a high-efficiency heating device for semiconductor production according to the present invention; Figure 4 It is a schematic diagram of the overall appearance of a heating furnace of a high-efficiency heating device for semiconductor production according to the present invention; Figure 5 The present invention is a schematic diagram of the overall appearance of a semiconductor tray of a high-efficiency heating device used in semiconductor production.

[0020] Reference numerals

[0021] 1. Equipment module; 2. Control panel; 3. Upper cover; 4. Heating module; 5. Electric telescopic rod; 6. Sealing ring; 7. Semiconductor tray; 8. Connector; 9. PI high-temperature hot-melt aluminum substrate; 10. Sealing baffle; 11. First pipeline; 12. Second pipeline; 13. Transmission shaft; 14. Limiting column; 15. Low-speed drive motor; 16. Vacuum device; 17. Nitrogen pressurizing device; 18. Top heating lamp; 19. Edge heating lamp; 20. First annular groove; 21. Heating furnace; 22. Connecting plate; 23. Carrying platform. DETAILED DESCRIPTION

[0022] In order to make the technical solutions, advantages and purposes of the present invention clearer, the technical solutions of the embodiments of the present invention are clearly and completely described below. The described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work belong to the protection scope of this application.

[0023] Unless otherwise defined, the technical terms or scientific terms used in the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The words "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0024] like Figure 1-3 As shown, a high-efficiency heating device for semiconductor production includes an equipment module 1, a heating module 4 and a carrying platform 23; a low-speed drive motor 15, a vacuum device 16 and a nitrogen pressurizing device 17 are arranged inside the equipment module 1, and a control panel 2 is arranged on the front thereof, and the control panel 2 can be controlled independently or connected to an automated production process for automated management; the carrying platform 23 is arranged on the top of the equipment module 1, and is provided with a semiconductor tray 7 and an annular sealing baffle 10 surrounding the semiconductor tray 7; the heating module 4 is located above the semiconductor tray 7, and its upper part is an upper cover plate 3, and the lower part of the heating module 4 is a heating furnace 21, and the upper cover plate 3 and the heating furnace 21 are fixedly connected together.

[0025] Connecting plates 22 are provided on both sides of the upper cover 3, and the upper cover 3 and the connecting plates 22 are fixedly connected. Connecting pieces 8 are provided at both ends of one side of the top surface of the equipment module 1, and one end of the connecting plate 22 is movably connected to the connecting piece 8 by bolts; electric telescopic rods 5 are also provided on both sides of the upper cover 3, and one end of the electric telescopic rod 5 is movably connected to the upper cover 3, and the other end of the electric telescopic rod 5 is provided on both sides of the top surface of the equipment module 1, and is movably connected to the top of the equipment module 1. By extending and retracting the electric telescopic rod 5, the heating furnace 21 and the carrying platform 23 can be closed, thereby realizing the sealing of the semiconductor heating space.

[0026] like Figure 4 As shown, the heating furnace 21 is circular, and a first annular groove 20 is arranged inside it, and when the heating furnace 21 and the carrying platform 23 are closed, the annular sealing baffle 10 is stuck in the first annular groove 20 to enhance its airtightness; a top heating lamp 18 is arranged on the top of the heating furnace 21, and the irradiation direction of the top heating lamp 18 is facing the upper surface of the semiconductor tray 7, which can effectively heat the front of the semiconductor to be heated; an edge heating lamp 19 is arranged on the side between the first annular groove 20 and the top heating lamp 18, and the edge heating lamp 19 is facing the side of the semiconductor tray 7, which can effectively heat the semiconductor to be heated. The side of the semiconductor is heated; a first pipe 11 and a second pipe 12 are also connected to the side of the heating furnace 21, and the heating furnace 21 is connected to the vacuum device 16 through the first pipe 11, and the vacuum device 16 can be used to evacuate the closed heating furnace 21, and some impurities, dust, etc. can also be extracted cleanly; the heating furnace 21 is connected to a nitrogen pressurizing device 17 through the second pipe 12, and the nitrogen pressurizing device 17 can be used to pressurize the closed heating furnace 21 with nitrogen and maintain the stability of the air pressure, thereby ensuring that the semiconductor heating is carried out in a stable nitrogen environment, thereby improving the success rate of semiconductor heating.

[0027] like Figure 5 As shown, the carrying platform 23 includes an outer annular sealing baffle 10 and a semiconductor tray 7 in the middle. An annular sealing ring 6 is arranged on the top of the annular sealing baffle 10 to enhance the airtightness of the heating furnace 21 and the carrying platform 23 when they are closed; the bottom of the semiconductor tray 7 is connected to the low-speed drive motor 15 through a transmission shaft 13, so that the semiconductor tray 7 rotates slowly under the rotation of the low-speed drive motor 15 to ensure that the semiconductor is heated evenly, and 5 raised PI high-temperature hot-melt aluminum substrates 9 are evenly arranged on its surface. The PI high-temperature hot-melt aluminum substrate 9 is used to heat the side of the semiconductor that contacts the PI high-temperature hot-melt aluminum substrate 9 to ensure that the front and back sides of the semiconductor are heated evenly; the surface of the PI high-temperature hot-melt aluminum substrate 9 is evenly arranged with 4 limit posts 14 to prevent the semiconductor from deviating from its position due to the rotation of the semiconductor tray 7 during the heating process; The working principle of the present invention is as follows: when it is necessary to heat the semiconductor, first, place the semiconductor to be heated on the PI high-temperature hot-melt aluminum substrate 9 of the semiconductor tray 7, so that the semiconductor is stuck in the limit column 14. Then, operate the control panel 2 to shrink the electric telescopic rod 5, control the annular sealing baffle 10 to be stuck in the first annular groove 20, close the heating furnace 21 and the carrying platform 23, and ensure the airtightness of the heating space. Secondly, start the vacuum device 16 to treat the heating space in a vacuum environment to ensure that the heating space is dust-free and free of contaminants; then start the nitrogen pressurizing device 17 to ensure that the heating space is in a stable nitrogen environment. Finally, start the low-speed drive motor 15 to rotate the semiconductor tray 7 slowly, turn on the top heating lamp 18 and the edge heating lamp 19 on the heating furnace 21, heat the front and side of the semiconductor, turn on the heating device on the PI high-temperature hot-melt aluminum substrate 9, heat the bottom of the semiconductor, and ensure that the semiconductor is heated evenly. When the semiconductor is fully heated, turn off the low-speed drive motor 15 to stop the rotation of the semiconductor tray 7, operate the nitrogen pressurizing device 17 to remove the nitrogen in the heating space, start the vacuum device 16 again to replenish air in the heating space to make the internal and external pressures consistent, operate the control panel 2 to control the electric telescopic rod 5 to extend, separate the heating furnace 21 and the carrying platform 23, and take out the processed semiconductor.

[0028] Therefore, the present invention proposes a high-efficiency heating device for semiconductor production, which solves the problem that the existing semiconductor light heating device cannot achieve uniform heating and closed heating of the semiconductor. It can effectively ensure that the semiconductor is heated evenly and is not polluted by the external environment, avoids the deformation of the semiconductor due to uneven heating and the low yield rate due to external environmental pollution, improves production efficiency and saves production costs.

[0029] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that they can still modify or replace the technical solution of the present invention with equivalents, and these modifications or equivalent replacements cannot cause the modified technical solution to deviate from the spirit and scope of the technical solution of the present invention.

Claims

1. A highly efficient heating device for semiconductor production, characterized in that: It includes an equipment module, a heating module and a carrying platform. A low-speed drive motor, a vacuum device and a nitrogen pressurizing device are arranged inside the equipment module; the carrying platform is arranged on the top of the equipment module, and a semiconductor tray is arranged in the middle of the carrying platform; the upper part of the heating module is an upper cover plate, and the lower part of the heating module is a heating furnace, and the upper cover plate and the heating furnace are fixedly connected together.

2. A high-efficiency heating device for semiconductor production according to claim 1, characterized in that: A control panel is provided on the front of the equipment module, and the low-speed drive motor is connected to the semiconductor tray via a transmission shaft.

3. The high-efficiency heating device for semiconductor production according to claim 1, characterized in that: The vacuum device is connected to the heating furnace through a first pipeline, and the nitrogen pressurizing device is connected to the heating furnace through a second pipeline.

4. The high-efficiency heating device for semiconductor production according to claim 1, characterized in that: Connecting plates are provided on both sides of the upper cover plate, and the connecting plates are fixedly connected to the upper cover plate. Connecting pieces are provided at both ends of one side of the top surface of the equipment module, and one end of the connecting plate and the connecting piece are movably connected by bolts.

5. A high-efficiency heating device for semiconductor production according to claim 4, characterized in that: Electric telescopic rods are also arranged on both sides of the upper cover plate, one end of the electric telescopic rod is movably connected to the upper cover plate, and the other end of the electric telescopic rod is arranged on both sides of the top surface of the equipment module and is movably connected to the top of the equipment module.

6. The high-efficiency heating device for semiconductor production according to claim 3, characterized in that: The heating furnace is circular, and a first annular groove is arranged on its inner surface; a top heating lamp is arranged on the top of the heating furnace, and an edge heating lamp is arranged on the edge of the heating furnace.

7. A high-efficiency heating device for semiconductor production according to claim 6, characterized in that: The top heating lamp faces the front side of the semiconductor tray, and the edge heating lamp faces the side side of the semiconductor tray.

8. The high-efficiency heating device for semiconductor production according to claim 2, characterized in that: The semiconductor tray is circular, and is provided with an annular sealing baffle around it. An annular sealing ring is provided on the top of the sealing baffle, and the height of the sealing baffle is lower than that of the semiconductor tray.

9. A high-efficiency heating device for semiconductor production according to claim 8, characterized in that: A PI high-temperature hot-melt aluminum substrate is provided on the upper surface of the semiconductor tray, and a limiting column is provided on the surface of the PI high-temperature hot-melt aluminum substrate.

10. The high-efficiency heating device for semiconductor production according to claim 9, characterized in that: The PI high-temperature hot-melt aluminum substrate is circular and is evenly arranged on the semiconductor tray, with a number of 5; the limiting columns are evenly arranged on the upper surface of the PI high-temperature hot-melt aluminum substrate, with a number of 4.

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