Metal layer capacitor structure and manufacturing method thereof

Abstract

The invention relates to a metal layer capacitor structure and a manufacturing method thereof, the metal layer capacitor structure comprises a substrate, an insulating medium and a capacitor layer, the insulating medium is deposited on the upper surface of the substrate, a through hole is formed in the insulating medium, and the through hole is used for a first metal connecting piece and a second metal connecting piece with different charges to pass through; the capacitor layer is attached to the inner surface of the through hole, a positive plate of the capacitor layer is used for being electrically connected with the first metal connecting piece, and a negative plate of the capacitor layer is used for being electrically connected with the second metal connecting piece. According to the technical scheme, the capacitor layer is attached to the inner surface of the through hole, namely, the bent shape of the capacitor layer in the through hole is consistent with the inner surface of the through hole or consistent with the outer surface of the first metal connecting piece, so that the capacitor layer can form a U-shaped three-dimensional capacitor structure, and the capacity of the capacitor is improved in a limited space. The positive plate and the negative plate of the capacitor layer can have a larger relative area, so that the capacitance capacity and the integration degree of the metal layer capacitor structure are improved.

Description

Technical Field

[0001] The present disclosure relates to the field of capacitor technology, and in particular, to a metal layer capacitor structure and a manufacturing method thereof. Background Art

[0002] The current types of capacitors are mainly MIM capacitors and MOM capacitors. MIM capacitors are highly restricted, have a small capacitance value, and have a more complex processing technology, which increases the process cost during the processing; while MOM has the problem of occupying a large space, which will affect the integration of integrated circuits. Summary of the invention

[0003] The purpose of the present disclosure is to provide a metal layer capacitor structure and a manufacturing method thereof to solve the technical problems existing in the related art.

[0004] In order to achieve the above object, the first aspect of the present disclosure provides a metal layer capacitor structure, comprising:

[0005] substrate;

[0006] An insulating medium, wherein the insulating medium is deposited on the upper surface of the substrate, and a through hole is formed on the insulating medium, wherein the through hole is used for a first metal connector and a second metal connector with different charges to pass through;

[0007] A capacitor layer is attached to the inner surface of the through hole, and the positive plate of the capacitor layer is used to be electrically connected to the first metal connector, and the negative plate of the capacitor layer is used to be electrically connected to the second metal connector.

[0008] Optionally, the capacitor layer includes a first part and a second part, the first part is formed into a cylindrical shape, the second part is formed into a plate shape, the first end of the first part is connected to the second part, the first part and the second part together enclose a cavity open to the outside, the cavity is used for the first metal connector to be inserted, and the first metal connector is in contact with the inner surface of the first part and / or the second part, and the side of the second part away from the first part is used to contact the second metal connector.

[0009] Optionally, the inner diameter of the cavity gradually increases along the direction from the first end of the first part to the second end of the first part.

[0010] Optionally, the capacitor layer includes a first conductive layer, a dielectric layer and a second conductive layer, the first conductive layer is formed as a positive plate of the capacitor layer, the second conductive layer is formed as a negative plate of the capacitor layer, the first conductive layer, the dielectric layer and the second conductive layer are stacked in sequence, the first conductive layer is used to connect to the first metal connector, and the second conductive layer is used to connect to the second metal connector.

[0011] Optionally, the first conductive layer and the second conductive layer are both made of titanium nitride.

[0012] According to a second aspect of the present disclosure, a method for manufacturing the above-mentioned metal layer capacitor structure is provided, comprising:

[0013] depositing an insulating medium on the substrate;

[0014] Etching a first through hole inside the insulating medium by an etching process;

[0015] The capacitor layer is attached in the first through hole.

[0016] Optionally, attaching the capacitor layer in the first through hole includes:

[0017] Attaching a capacitor structure on the upper surface of the insulating medium and the inner surface of the first through hole;

[0018] A first deposition is performed on the upper surface of the capacitor structure, and a grinding operation is performed after the first deposition is completed, so that after the portion of the capacitor structure attached to the upper surface of the insulating medium is polished, the remaining portion of the capacitor structure forms the capacitor layer on the inner surface of the through hole.

[0019] Optionally, the first deposition and polishing operation is performed so that a portion of the capacitor structure attached to the upper surface of the insulating medium is polished, and the remaining portion of the capacitor structure forms the capacitor layer on the inner surface of the through hole, comprising:

[0020] The first deposited film is polished from top to bottom by a chemical mechanical polishing process until a portion of the capacitor structure attached to the upper surface of the insulating medium is polished, and then the polishing is stopped.

[0021] Optionally, the method further comprises:

[0022] A second deposition is performed to cover the upper surface of the insulating medium and above the first through hole with a thin film.

[0023] Optionally, the second deposited film and the first deposited film are etched above the first through hole to form the through hole on the insulating medium through which the first metal connector and the second metal connector with different charges pass.

[0024] Through the above technical solution, the capacitor layer is arranged between the first metal connector and the second metal connector. Since the first metal connector and the second metal connector carry different charges, when the positive plate of the capacitor layer is electrically connected to the first metal connector and the negative plate of the capacitor layer is electrically connected to the second metal connector, an electric field is formed between the positive plate and the negative plate of the capacitor layer, and the charges move in the electric field due to the electric field force, thereby realizing the accumulation and storage of charges.

[0025] Moreover, precisely because the capacitor layer is attached to the inner surface of the through hole, that is, the shape of the capacitor layer bent in the through hole is consistent with the inner surface of the through hole (or consistent with the outer surface of the first metal connector), the capacitor layer can form a U-shaped three-dimensional capacitor structure. Within a limited space, the positive and negative plates of the capacitor layer can have a larger relative area, thereby improving the capacitance of the metal layer capacitor structure.

[0026] In addition, precisely because the capacitor layer is directly connected between the first metal connector and the second metal connector, and the capacitor layer is arranged in the through hole on the insulating medium, while improving the capacitance value of the above-mentioned metal layer capacitor structure, since there is no need to set related structures for fixing and sealing the capacitor layer, the processing difficulty is reduced, and the metal layer capacitor structure can be made simpler and more compact, thereby reducing the use area and occupied space of the metal layer capacitor structure, which is more conducive to improving the integration of integrated circuits.

[0027] Other features and advantages of the present disclosure will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0029] Figure 1 is a cross-sectional schematic diagram of a metal layer capacitor structure provided by an exemplary embodiment of the present disclosure, wherein the capacitor layer is disposed in a through hole, and a positive electrode plate of the capacitor layer is electrically connected to a first metal connector, and a negative electrode plate of the capacitor layer is electrically connected to a second metal connector;

[0030] Figure 2 yes Figure 1 An enlarged schematic diagram of part A;

[0031] Figure 3is a cross-sectional schematic diagram corresponding to step S202 of the method for manufacturing a metal layer capacitor structure provided in an exemplary embodiment of the present disclosure;

[0032] Figure 4 is a cross-sectional schematic diagram corresponding to step S203 of the method for manufacturing a metal layer capacitor structure provided in an exemplary embodiment of the present disclosure;

[0033] Figure 5 is a cross-sectional schematic diagram corresponding to step S204 of the method for manufacturing a metal layer capacitor structure provided in an exemplary embodiment of the present disclosure;

[0034] Figure 6 is a cross-sectional schematic diagram corresponding to step S205 of the method for manufacturing a metal layer capacitor structure provided in an exemplary embodiment of the present disclosure;

[0035] Figure 7 is a cross-sectional schematic diagram corresponding to step S206 of the method for manufacturing a metal layer capacitor structure provided in an exemplary embodiment of the present disclosure;

[0036] Figure 8 is a schematic flow chart of a method for manufacturing a metal layer capacitor structure provided by an exemplary embodiment of the present disclosure;

[0037] Fig. 9 It is a schematic flow chart of a method for manufacturing a metal layer capacitor structure provided in another exemplary embodiment of the present disclosure.

[0038] Description of Reference Numerals

[0039] 10-substrate; 20-insulating medium; 21-through hole; 22-first through hole; 30-capacitor structure; 300-capacitor layer; 310-first part; 320-second part; 340-first conductive layer; 350-dielectric layer; 360-second conductive layer; 40-first metal connector; 50-second metal connector. DETAILED DESCRIPTION

[0040] The specific implementation of the present disclosure is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present disclosure, and is not used to limit the present disclosure.

[0041] In the present disclosure, unless otherwise specified, the directions or positional relationships indicated by directional words such as "up", "down", "left", and "right" are defined based on the drawing directions shown in the accompanying drawings and are only for the convenience of describing the present disclosure and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific direction, and a specific directional structure and operation. Therefore, they cannot be understood as limitations on the present disclosure. The terms "inside and outside" refer to the inside and outside of the corresponding structural contour.

[0042] In addition, it should be noted that the terms used, such as "first", "second", etc., are used to distinguish one element from another element, and do not have order or importance. In addition, in the description with reference to the drawings, the same number in different drawings represents the same element.

[0043] In the description of the present disclosure, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "connect", "connected", and "installed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0044] refer to Figures 1 to 7 As shown, the first aspect of the present disclosure provides a metal layer capacitor structure, including: a substrate 10, an insulating medium 20 and a capacitor layer 300, the insulating medium 20 is deposited on the upper surface of the substrate 10, and a through hole 21 is formed on the insulating medium 20, and the through hole 21 is used for a first metal connector 40 and a second metal connector 50 with different charges to pass through; the capacitor layer 300 is attached to the inner surface of the through hole 21, and the positive plate of the capacitor layer 300 is used to be electrically connected to the first metal connector 40, and the negative plate of the capacitor layer 300 is used to be electrically connected to the second metal connector 50.

[0045] Through the above technical solution, the capacitor layer 300 is arranged between the first metal connector 40 and the second metal connector 50. Since the first metal connector 40 and the second metal connector 50 carry different charges, when the positive plate of the capacitor layer 300 is electrically connected to the first metal connector 40 and the negative plate of the capacitor layer 300 is electrically connected to the second metal connector 50, an electric field is formed between the positive plate and the negative plate of the capacitor layer 300, and the charges move in the electric field due to the electric field force, thereby realizing the accumulation and storage of charges.

[0046] Furthermore, it is precisely because the capacitor layer 300 is attached to the inner surface of the through hole 21, that is, the shape of the capacitor layer 300 bent in the through hole 21 is consistent with the inner surface of the through hole 21 (or consistent with the outer surface of the first metal connector 40), so that the capacitor layer 300 can form a U-shaped three-dimensional capacitor structure 30. Within a limited space, the positive plate and the negative plate of the capacitor layer 300 can have a larger relative area, thereby improving the capacitance of the metal layer capacitor structure.

[0047] In addition, precisely because the capacitor layer 300 is directly connected between the first metal connector 40 and the second metal connector 50, and the capacitor layer 300 is arranged in the through hole 21 on the insulating medium 20, while improving the capacitance value of the above-mentioned metal layer capacitor structure, since there is no need to set related structures for fixing and sealing the capacitor layer 300, the processing difficulty is reduced, and the metal layer capacitor structure can be made simpler and more compact, thereby reducing the use area and occupied space of the metal layer capacitor structure, which is more conducive to improving the integration of integrated circuits.

[0048] Optionally, in an exemplary embodiment provided by the present disclosure, as Figures 4 to 7 As shown, the capacitor layer 300 may include a first part 310 and a second part 320, the first part 310 is formed into a cylindrical shape, the second part 320 is formed into a plate shape, the first end of the first part 310 is connected to the second part 320, the first part 310 and the second part 320 together enclose a cavity open to the outside, the cavity is used for the first metal connector 40 to be inserted, and the first metal connector 40 is in contact with the inner surface of the first part 310 and / or the second part 320, and the side of the second part 320 away from the first part 310 is used to contact the second metal connector 50. The first part 310 is formed into a cylindrical shape, and the second part 320 is formed into a plate shape. That is, the outer structure of the capacitor layer 300 formed by the first part 310 and the second part 320 matches the shape of the inner surface of the through hole 21. In this way, after the capacitor layer 300 is arranged in the through hole 21, the capacitor layer 300 can be as close to the inner surface of the through hole 21 as possible. On the one hand, the area of ​​the positive plate and the negative plate of the capacitor layer 300 arranged in the through hole 21 can be increased, thereby increasing the positive plate and the negative plate. On the other hand, the first part 310 and the second part 320 can be stretched as much as possible (without wrinkles) and arranged in the through hole 21. In this way, when the first metal connector 40 is inserted into the cavity enclosed by the first part 310 and the second part 320, it can also be ensured that the first metal connector 40 has a larger contact area with the first part 310 and / or the second part 320, thereby improving the stability of the electrical connection between the first metal connector 40 and the first part 310 and / or the second part 320.

[0049] Since the through hole 21 on the insulating medium 20 is formed by cell via etching (Cell Via Etch), as shown in FIG. Figure 3 As shown, the shape of the through hole 21 is generally large at the top and small at the bottom. Based on this, in the present disclosure, optionally, as Figures 4 to 7As shown, in the present disclosure, the inner diameter of the cavity gradually increases from the first end of the first part 310 to the second end of the first part 310. That is, the shape of the first part 310 attached to the inner surface of the through hole 21 and the shape of the cavity are both matched with the shape of the inner surface of the through hole 21, so that the contact area between the first part 310 and the inner surface of the through hole 21 can be increased, and the fitting effect between the first part 310 and the inner surface of the through hole 21 is improved.

[0050] Similarly, in order to improve the fitting effect between the first metal connector 40 and the first portion 310 disposed in the through hole 21, in an exemplary embodiment provided in the present disclosure, as Figure 1 to Figure 2 As shown, the shape of the portion of the first metal connector 40 inserted in the cavity can also match the shape of the cavity, that is, the portion of the first metal connector 40 inserted in the cavity is also formed to be larger at the top and smaller at the bottom. In this way, the first metal connector 40 can maintain close contact with the inner surface of the first part 310 when inserted into the cavity, thereby improving the connection stability between the first metal connector 40 and the first part 310.

[0051] Alternatively, if Figure 1 to Figure 2 , Figures 4 to 7 As shown, the capacitor layer 300 may include a first conductive layer 340, a dielectric layer 350, and a second conductive layer 360. The first conductive layer 340 is formed as a positive plate of the capacitor layer 300, and the second conductive layer 360 is formed as a negative plate of the capacitor layer 300. The first conductive layer 340, the dielectric layer 350, and the second conductive layer 360 are stacked in sequence. The first conductive layer 340 is used to connect with the first metal connector 40, and the second conductive layer 360 is used to connect with the second metal connector 50. When the first metal connector 40 is conductively connected to the first conductive layer 340 and the second metal connector 50 is conductively connected to the second conductive layer 360, an electric field can be formed between the first conductive layer 340 and the second conductive layer 360 of the capacitor layer 300, and the charge moves in the electric field under the electric field force, thereby realizing the accumulation and storage of the charge.

[0052] Similarly, because the shapes of the first conductive layer 340, the dielectric layer 350 and the second conductive layer 360 bent in the through hole 21 are consistent with the inner surface of the through hole 21 (or consistent with the outer surface of the first metal connector 40), a U-shaped three-dimensional capacitor is formed. Within a limited space, the first conductive layer 340 and the second conductive layer 360 can have a larger relative area, thereby improving the capacitance of the metal layer capacitor structure.

[0053] In an exemplary embodiment provided by the present disclosure, optionally, the first conductive layer 340 and the second conductive layer 360 are both made of titanium nitride. Titanium nitride has physical and chemical properties such as high melting point, high hardness, high temperature chemical stability, and excellent thermal and electrical conductivity, and can improve the conductive effect and service life of the first conductive layer 340 and the second conductive layer 360.

[0054] It should be noted that the present disclosure does not limit the specific material of the first conductive layer 340 and the second conductive layer 360, as long as they can achieve electrical connection with the above-mentioned positive plate and negative plate. For example, the first conductive layer 340 and the second conductive layer 360 can also be made of conductive metal materials such as copper and aluminum.

[0055] In order to increase the capacitance value of the above-mentioned metal layer capacitor structure, the dielectric layer 350 can be made of a material with a high dielectric constant. For example, in an exemplary embodiment provided in the present disclosure, the above-mentioned dielectric layer 350 can be made of aluminum oxide, or the dielectric layer 350 can also be made of zirconium oxide or hafnium oxide. Specifically, materials with different dielectric constants can be selected according to actual needs, which will not be elaborated in the present disclosure.

[0056] According to a second aspect of the present disclosure, Figures 1 to 9 As shown, a method for manufacturing the above-mentioned metal layer capacitor structure is provided, comprising:

[0057] S101, depositing an insulating medium 20 on a substrate 10;

[0058] S102, etching a first through hole 22 inside the insulating medium 20 by an etching process;

[0059] S103 , attaching the capacitor layer 300 in the first through hole 22 .

[0060] Through the above technical solution, the upper and lower end surfaces of the capacitor layer 300 attached to the first through hole 22 can be electrically connected to the first metal connector 40 and the second metal connector 50 with different charges, respectively. Moreover, since the capacitor layer 300 is arranged in the through hole 21 on the insulating medium 20, while improving the capacitance value of the above-mentioned metal layer capacitor structure, since there is no need to set related structures for fixing and sealing the capacitor layer 300, the metal layer capacitor structure can also be made simpler and more compact, thereby reducing the use area and occupied space of the metal layer capacitor structure, which is more conducive to improving the integration of integrated circuits.

[0061] refer to Figure 6 As shown, according to an embodiment of the present disclosure, another method for manufacturing a metal layer capacitor is also provided, including:

[0062] S201 , depositing an insulating medium 20 on a substrate 10 .

[0063] like Figure 3 As shown, S202 , a first through hole 22 is etched inside the insulating medium 20 by an etching process.

[0064] When etching the first through hole 22 , in one embodiment provided in the present disclosure, etching may be performed by cell via etching.

[0065] like Figure 4 As shown, S203 , a capacitor structure 30 is attached to the upper surface of the insulating medium 20 and the inner surface of the first through hole 22 .

[0066] like Figure 5 As shown, S204, a first deposition is performed on the upper surface of the insulating medium 20. During the first deposition process, the deposited film can at least completely fill the interior of the first through hole 22, that is, the deposited film can completely cover the capacitor structure 30 attached to the inner surface of the first through hole 22, so that in the process of polishing the first deposited film by a chemical polishing process in step S205, the film filled in the first through hole 22 can protect the capacitor structure 30 located in the first through hole 22, thereby avoiding the problem that the capacitor structure 30 located in the first through hole 22 is destroyed or damaged during the polishing process.

[0067] like Figure 6 As shown, S205, the first deposited film is polished from top to bottom by a chemical mechanical polishing process, so that after the part of the capacitor structure 30 attached to the upper surface of the insulating medium 20 is polished, the polishing is stopped, and the remaining part of the capacitor structure 30 forms a capacitor layer 300 on the inner surface of the through hole 21. In the process of polishing the first deposited film from top to bottom by a chemical mechanical polishing process, the part of the capacitor structure 30 attached to the upper surface of the insulating medium 20 can be polished, so that only the capacitor layer 300 located in the through hole 21 is retained, so as to avoid the capacitor structure 30 located outside the through hole 21 interfering with the connection between the capacitor layer 300 and the first metal connector 40 when the first metal connector 40 is inserted into the through hole 21.

[0068] like Figure 7 As shown, S206 , a second deposition is performed to cover the upper surface of the insulating medium 20 and above the first through hole 22 with a thin film.

[0069] It should be noted that the thickness of the film deposited during the second deposition should be greater than or equal to the height of the first metal connector 40 protruding from the first through hole 22. In this way, the second deposited film can completely wrap the first metal connector 40 that is subsequently inserted into the first through hole 22, thereby providing better sealing, insulation and protection for the first metal connector 40.

[0070] like Fig. 9 As shown, S207, the second deposited film and the first deposited film are etched above the first through hole 22 to form a first through hole 22 on the insulating medium 20 for the first metal connector 40 and the second metal connector 50 with different charges to pass through.

[0071] In an exemplary embodiment provided by the present disclosure, when etching the second deposited thin film and the first deposited thin film located above the first through hole 22 , a photo-etching process may be used for etching.

[0072] By adopting the above method, a first through hole 22 is etched on the insulating medium 20, and the capacitor layer 300 is attached to the first through hole 22, and then a first deposition, grinding, a second deposition, and etching are performed to form a first through hole 22 for the first metal connector 40 and the second metal connector 50 to pass through. Since the first metal connector 40 and the second metal connector 50 have different charges, when the positive plate of the capacitor layer 300 is electrically connected to the first metal connector 40 and the negative plate of the capacitor layer 300 is electrically connected to the second metal connector 50, the positive plate of the capacitor layer 300 An electric field is formed between the capacitor layer 300 and the negative plate, and the charges are moved in the electric field due to the electric field force, thereby realizing the accumulation and storage of charges. Moreover, it is precisely because the capacitor layer 300 is attached to the inner surface of the through hole 21, that is, the shape of the capacitor layer 300 bent in the through hole 21 is consistent with the inner surface of the through hole 21 (or consistent with the outer surface of the first metal connector 40), so that the capacitor layer 300 can form a U-shaped three-dimensional capacitor structure 30. In a limited space, the positive plate and the negative plate of the capacitor layer 300 can have a larger relative area, thereby improving the capacitance of the metal layer capacitor structure.

[0073] In addition, precisely because the capacitor layer 300 is directly connected between the first metal connector 40 and the second metal connector 50, and the capacitor layer 300 is arranged in the through hole 21 on the insulating medium 20, while improving the capacitance value of the above-mentioned metal layer capacitor structure, since there is no need to set related structures for fixing and sealing the capacitor layer 300, the processing difficulty is reduced, and the metal layer capacitor structure can be made simpler and more compact, thereby reducing the use area and occupied space of the metal layer capacitor structure, which is more conducive to improving the integration of integrated circuits.

[0074] The preferred embodiments of the present disclosure are described in detail above in conjunction with the accompanying drawings; however, the present disclosure is not limited to the specific details in the above embodiments. Within the technical concept of the present disclosure, a variety of simple modifications can be made to the technical solution of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.

[0075] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present disclosure will not further describe various possible combinations.

[0076] In addition, various embodiments of the present disclosure may be arbitrarily combined, and as long as they do not violate the concept of the present disclosure, they should also be regarded as the contents disclosed by the present disclosure.

Claims

1. A metal layer capacitor structure, characterized in that: include: substrate; An insulating medium, wherein the insulating medium is deposited on the upper surface of the substrate, and a through hole is formed on the insulating medium, wherein the through hole is used for a first metal connector and a second metal connector with different charges to pass through; A capacitor layer is attached to the inner surface of the through hole, and the positive plate of the capacitor layer is used to be electrically connected to the first metal connector, and the negative plate of the capacitor layer is used to be electrically connected to the second metal connector.

2. The metal layer capacitor structure according to claim 1, characterized in that: The capacitor layer includes a first part and a second part, the first part is formed into a cylindrical shape, the second part is formed into a plate shape, the first end of the first part is connected to the second part, the first part and the second part together enclose a cavity open to the outside, the cavity is used for the first metal connector to be inserted, and the first metal connector is in contact with the inner surface of the first part and / or the second part, and the side of the second part away from the first part is used to contact the second metal connector.

3. The metal layer capacitor structure according to claim 2, characterized in that: Along the direction from the first end of the first part to the second end of the first part, the inner diameter of the cavity gradually increases.

4. The metal layer capacitor structure according to any one of claims 1 to 3, characterized in that: The capacitor layer includes a first conductive layer, a dielectric layer and a second conductive layer, the first conductive layer is formed as a positive plate of the capacitor layer, the second conductive layer is formed as a negative plate of the capacitor layer, the first conductive layer, the dielectric layer and the second conductive layer are stacked in sequence, the first conductive layer is used to connect to the first metal connector, and the second conductive layer is used to connect to the second metal connector.

5. The metal layer capacitor structure according to claim 4, characterized in that: The first conductive layer and the second conductive layer are both made of titanium nitride.

6. A method for manufacturing the metal layer capacitor structure according to any one of claims 1 to 5, characterized in that: include: depositing an insulating medium on the substrate; Etching a first through hole inside the insulating medium by an etching process; The capacitor layer is attached in the first through hole.

7. The manufacturing method according to claim 6, characterized in that: The step of attaching the capacitor layer in the first through hole comprises: Attaching a capacitor structure on the upper surface of the insulating medium and the inner surface of the first through hole; A first deposition is performed on the upper surface of the capacitor structure, and a grinding operation is performed after the first deposition is completed, so that after the portion of the capacitor structure attached to the upper surface of the insulating medium is polished, the remaining portion of the capacitor structure forms the capacitor layer on the inner surface of the through hole.

8. The method according to claim 7, characterized in that: The first deposition and polishing operation is performed so that a portion of the capacitor structure attached to the upper surface of the insulating medium is polished, and the remaining portion of the capacitor structure forms the capacitor layer on the inner surface of the through hole, including: The first deposited film is polished from top to bottom by a chemical mechanical polishing process until a portion of the capacitor structure attached to the upper surface of the insulating medium is polished, and then the polishing is stopped.

9. The manufacturing method according to claim 7, characterized in that: The method further comprises: A second deposition is performed to cover the upper surface of the insulating medium and above the first through hole with a thin film.

10. The manufacturing method according to claim 9, characterized in that: The second deposited film and the first deposited film are etched above the first through hole to form the through hole on the insulating medium through which the first metal connector and the second metal connector with different charges pass.

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