Antenna and electronic equipment
By adopting splicing technology and misaligned step design in flat-slit antennas, the problems of low yield and large splicing error in the prior art are solved, and higher stability and yield are achieved.
Patent Information
- Application Number
- CN202411523539.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-29
- Publication Date
- 2025-05-13
AI Technical Summary
The existing flat-panel gap antennas have a lower product yield due to the thickness of glass copper clad, and the error at the splicing is large, which affects structural stability.
The radiating structure is prepared by using the splicing process. By dislocating the upper glass and the lower glass to form steps, using the steps to position them, and increasing the contact area at the splicing, improving structural stability and splicing accuracy.
It improves the product yield and structural stability of the antenna, reduces errors at splicing, and enhances the overall performance of the radiation structure.
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Figure CN119994463A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the field of radio frequency technology, and in particular relates to an antenna and an electronic device. Background Art
[0002] In the related art, the radiation structure of the flat slot antenna is a structure of two layers of glass sandwiching a copper layer. As the size of the antenna increases, the product yield will decrease due to the large area of thick copper (0.002mm) covering the glass. In view of this, the present disclosure provides a radiation structure prepared by a splicing process. When splicing, the upper layer of glass and the lower layer of glass can be misaligned to form a step. In this way, the step can be used for positioning during splicing, and the contact area of the splicing with the step will be larger than that without the step, the structure will be more stable, and the error of the splicing will be greatly reduced. Summary of the invention
[0003] The present invention aims to solve at least one of the technical problems existing in the prior art, and provides an antenna, comprising a waveguide structure, a dielectric substrate and a radiation structure; the waveguide structure comprises a bottom plate defining a waveguide cavity and a side plate connected to the edge of the bottom plate; the dielectric substrate and the radiation structure are sequentially arranged in the waveguide cavity in a direction away from the bottom plate; a first gap is provided between the dielectric substrate and the radiation structure;
[0004] Wherein, the radiation structure is formed by splicing at least two radiation components; for the two spliced radiation components, one of them is provided with a protrusion at one end close to the other, and the other is provided with a receiving portion adapted to the protrusion; at least one end of the radiation component is provided with the protrusion or the receiving portion.
[0005] In some embodiments, the radiation component includes a first support member and a second support member stacked together, and a radiation electrode sandwiched between the first support member and the second support member; the first support member is closer to the dielectric substrate than the second support member;
[0006] The orthographic projection of the first support member on the dielectric substrate covers the orthographic projection of the radiation electrode on the dielectric substrate; the orthographic projection of the second support member on the dielectric substrate covers at least part of the orthographic projection of the radiation electrode on the dielectric substrate.
[0007] In some embodiments, for one of the two radiating components that are spliced and connected, the protrusion is provided at the splicing position of the two components, the edge of the first support member close to the other radiating component coincides with the edge of the radiating electrode close to the other radiating component, the edge of the radiating electrode close to the other radiating component and the edge of the second support member close to the other radiating component have a first distance between their orthographic projections on the dielectric substrate, and the edge of the second support member close to the other radiating component is farther away from the other radiating component than the edge of the radiating electrode close to the other radiating component; the edge of the second support member close to the other radiating component, the edge of the first support member close to the other radiating component, and the edge of the radiating electrode close to the other radiating component jointly define the protrusion;
[0008] For one of the two spliced radiation components, the accommodating portion is provided at the splicing position of the two, wherein the edge of the first support member close to the other radiation component coincides with the edge of the radiation electrode close to the other radiation component, the edge of the radiation electrode close to the other radiation component and the edge of the second support member close to the other radiation component have a first distance between their orthographic projections on the dielectric substrate, and the edge of the second support member close to the other radiation component is closer to the other radiation component than the edge of the radiation electrode close to the other radiation component; the edge of the second support member close to the other radiation component, the edge of the first support member close to the other radiation component, and the edge of the radiation electrode close to the other radiation component jointly define the accommodating portion.
[0009] In some embodiments, the radiation structure is formed by splicing two radiation components, namely a first radiation component and a second radiation component;
[0010] The protruding portion is disposed on a side of the first radiation component close to the second radiation component; and the accommodating portion is disposed on a side of the second radiation component close to the first radiation component.
[0011] In some embodiments, the radiation structure is formed by splicing N radiation components, where N is a positive integer greater than 2;
[0012] The three radiation components connected in a spliced manner are respectively the first radiation component, the second radiation component and the third radiation component connected in sequence; the first radiation component is provided with the protruding portion on the side close to the second radiation component, the second radiation component is provided with the accommodating portion on the side close to the first radiation component, the second radiation component is provided with the protruding portion on the side close to the third radiation component, and the third radiation component is provided with the accommodating portion on the side close to the second radiation component.
[0013] In some embodiments, the radiation structure is formed by splicing N radiation components, N=2k, k is a positive integer greater than 1;
[0014] The three radiation components that are spliced and connected are the first radiation component, the second radiation component and the third radiation component that are connected in sequence; the protrusion is provided on the side of the first radiation component close to the second radiation component, the accommodation portion is provided on the side of the second radiation component close to the first radiation component, the accommodation portion is provided on the side of the second radiation component close to the third radiation component, and the protrusion is provided on the side of the third radiation component close to the second radiation component.
[0015] In some embodiments, the orthographic projection of the radiation electrode on the dielectric substrate is fan-shaped; the radiation electrodes of each radiation component are spliced to form a first electrode, and the orthographic projection of the first electrode on the dielectric substrate is circular; the first electrode includes a plurality of gap pairs.
[0016] In some embodiments, the gap pairs are arranged to form a plurality of nested groups, the gap pairs in each group are spaced apart in sequence, and the lines connecting the centers of the gap pairs in each group form a circle; the centers of the circles formed by the gap pairs in each group are the same, and form concentric circles; the centers of the concentric circles are the same as the center of the radiation electrode.
[0017] In some embodiments, the slit pair includes a first slit and a second slit having different extension directions, and the center of the slit pair is the intersection of the extension direction of the first slit and the extension direction of the second slit;
[0018] The angle between the line connecting the center of the first slit and the center of the concentric circle and the extension direction of the first slit is equal to the angle between the line connecting the center of the second slit and the center of the circle and the extension direction of the second slit, and the angle is θ1; the angle between the line connecting the center of the first slit and the center of the concentric circle and the line connecting the center of the second slit and the center of the circle is β1; the length of the first slit and the length of the second slit are both L; the extension direction of the first slit is perpendicular to the extension direction of the second slit, and the vertical distance between the first slit and the second slit is δ; the distance between the center of the first slit and the center of the concentric circle is ρ1, and the distance between the center of the second slit and the center of the concentric circle is ρ2; the above parameters satisfy:
[0019]
[0020] ρ2sinθ1-ρ1cosθ1=L+δ
[0021]
[0022] in, is the first kind Hankel function, is the second kind of Hankel function, λ g is the waveguide wavelength.
[0023] In some embodiments, the difference between the radii of two circles formed by two adjacent groups of the slot pairs is d, and d is less than λ0; λ0 is the wavelength of air.
[0024] In some embodiments, the antenna further includes a plurality of radiation probes extending through the first slot and the second slot.
[0025] In some embodiments, the antenna further includes four feeding structures, and the feeding structures extend into the waveguide cavity through second through holes penetrating the bottom plate; with the center of the bottom plate as the rotation center, any two adjacent feeding structures are rotationally symmetrical.
[0026] In some embodiments, the antenna further includes a power divider electrically connected to the feeding structure; the power divider is disposed on a side of the bottom plate away from the dielectric substrate and at least partially overlaps with an orthographic projection of the bottom plate on the dielectric substrate.
[0027] In some embodiments, the power divider includes a dielectric layer, a reference electrode layer disposed between the dielectric layer and the base plate, and a microstrip transmission structure disposed on a side of the dielectric layer away from the base plate;
[0028] The microstrip transmission structure comprises a signal input port, first to fourth signal output ports, and first to third microstrip transmission lines; the first to third microstrip transmission lines are one-to-two equal power distribution transmission lines; the four signal output ports are respectively connected to different feeding structures;
[0029] The signal input port is connected to the first end of the first microstrip transmission line; the second end and the third end of the first microstrip transmission line are respectively connected to the first end of the second microstrip transmission line and the third microstrip transmission line; the second end and the third end of the second microstrip transmission line are respectively connected to the first signal output port and the second signal output port; the second end and the third end of the third microstrip transmission line are respectively connected to the third signal output port and the fourth signal output port.
[0030] In some embodiments, the four feeding structures are respectively the first to fourth feeding structures in the clockwise direction; the power divider includes a dielectric layer, a reference electrode layer arranged between the second dielectric substrate and the bottom plate, and a microstrip transmission structure arranged on a side of the dielectric layer away from the bottom plate;
[0031] The microstrip transmission structure includes first to fourth directional couplers; the input port of the first directional coupler is used as the signal input end of the microstrip transmission structure, and the output port and the coupling port are respectively connected to the input ports of the second directional coupler and the third directional coupler; the isolation port of the second directional coupler is connected to the input port of the fourth directional coupler, and the output port and the coupling port are respectively connected to the first feeding structure and the third feeding structure; the isolation port of the third directional coupler is connected to the isolation port of the fourth directional coupler, and the output port and the coupling port are respectively connected to the second feeding structure and the fourth feeding structure.
[0032] In some embodiments, the antenna also includes a baffle group arranged on the side of the base plate close to the dielectric substrate; the baffle group includes a plurality of coaxially arranged baffles; the distance between one of the plurality of baffles closest to the center of the base plate and the center of the base plate is greater than the distance between the feeding structure and the center of the base plate.
[0033] In some embodiments, the distances between any two adjacent retaining walls are equal.
[0034] In some embodiments, the antenna further comprises an auxiliary electrode disposed between the radiation structure and the bottom plate; the radiation structure, the auxiliary electrode and the waveguide structure constitute a double-layer radial line waveguide structure.
[0035] In some embodiments, the distance between the radiation electrode and the bottom plate is H, H is less than λg / 2; λg is the waveguide wavelength.
[0036] In some embodiments, the antenna further includes a plurality of screws; the screws sequentially penetrate the dielectric substrate and the bottom plate and fix the two relatively; and the nuts of the screws define the first gap.
[0037] The present disclosure also provides an electronic device, comprising the antenna in the above embodiment. BRIEF DESCRIPTION OF THE DRAWINGS
[0038] Figure 1 A schematic diagram of the structure of an antenna provided by the present disclosure;
[0039] Figure 2 A schematic diagram of splicing two radiation components provided by the present disclosure;
[0040] Figure 3 A schematic structural diagram of a radiation structure provided by the present disclosure;
[0041] Figure 4 for Figure 3 A top view of the central radiation structure;
[0042] Figure 5 for Figure 4 A schematic structural diagram of the first radiation component;
[0043] Figure 6 A top view of another radiation structure provided by the present disclosure;
[0044] Figure 7 for Figure 6 A schematic diagram of the structure of the second radiation component;
[0045] Figure 8 A partial schematic diagram of a radiation structure provided by the present disclosure;
[0046] Fig. 9 A partial schematic diagram of another radiation structure provided by the present disclosure;
[0047] Fig.10 A schematic diagram of the structure of the first electrode provided by the present disclosure;
[0048] Fig.11 for Fig.10 Schematic diagram of the structure of the middle gap pair;
[0049] Fig.12 A schematic diagram of the structure of a retaining wall group in an antenna provided by the present disclosure;
[0050] Fig.13 A schematic diagram of the structure of a radiation probe in an antenna provided by the present disclosure;
[0051] Fig.14A schematic diagram of the structure of an auxiliary electrode in the antenna provided by the present disclosure;
[0052] Fig.15 for Fig.14 Simulation results of the antenna’s directivity pattern;
[0053] Fig.16 for Fig.14 Normalized E-plane simulation pattern of the middle antenna operating at 12 GHz;
[0054] Fig.17 for Fig.14 Normalized H-plane simulation pattern of the middle antenna operating at 12 GHz;
[0055] Fig.18 for Fig.14 The return loss S11 simulation result diagram of the middle antenna;
[0056] Fig.19 for Fig.14 Axial ratio diagram of the middle antenna;
[0057] Fig. 20 A schematic diagram of the structure of a power divider in an antenna provided in the present disclosure;
[0058] Fig.21 A top view of a power divider provided by the present disclosure;
[0059] Fig. 22 A top view of another power divider provided by the present disclosure;
[0060] Fig.23 for Fig. 20 Simulation results of the antenna’s directivity pattern;
[0061] Fig.24 for Fig. 20 Normalized E-plane simulation pattern of the middle antenna operating at 12 GHz;
[0062] Fig.25 for Fig. 20 Normalized H-plane simulation pattern of the middle antenna operating at 12 GHz;
[0063] Fig.26 for Fig. 20 The return loss S11 simulation result diagram of the middle antenna;
[0064] Fig. 27 for Fig. 20 Axial ratio diagram of the middle antenna;
[0065] Fig.28 To adopt Figure 6 The measured E-plane radiation pattern of the antenna prepared by splicing working at 12GHz;
[0066] Fig.29 To adopt Figure 6 The measured H-plane radiation pattern of the antenna prepared by splicing working at 12 GHz. DETAILED DESCRIPTION
[0067] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.
[0068] Unless otherwise defined, the technical terms or scientific terms involved in this application should be understood by people with ordinary skills in the technical field to which this application belongs. The words "one", "a", "a", "the" and the like involved in this application do not indicate a quantitative limitation, and may represent the singular or plural. The terms "include", "comprise", "have" and any of their variations involved in this application are intended to cover non-exclusive inclusions; for example, a process, method, system, product or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include steps or units that are not listed, or may also include other steps or units inherent to these processes, methods, products or devices. The words "connect", "connected", "coupled" and the like involved in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The "multiple" involved in this application refers to two or more. "And / or" describes the association relationship of associated objects, indicating that there may be three relationships, for example, "A and / or B" can represent: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the objects before and after are in an "or" relationship. The terms "first", "second", "third", etc. involved in this application are only used to distinguish similar objects and do not represent a specific ordering of the objects. "Up", "down", "left", "right", etc. are only used to indicate relative position relationships. When the absolute position of the described object changes, the relative position relationship may also change accordingly.
[0069] As used herein, "parallel" and "perpendicular" include the described situation and the situation similar to the described situation, and the range of the similar situation is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the error associated with the measurement of a specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°.
[0070] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of regions of the device, and are not intended to limit the scope of the exemplary embodiments.
[0071] In a first aspect, the present disclosure provides an antenna, referring to Figure 1 , the antenna includes a waveguide structure 1, a dielectric substrate 2 and a radiation structure 3. Among them, the waveguide structure 1 includes a bottom plate 11 that defines the waveguide cavity of the antenna and a side plate 12 connected to the edge of the bottom plate 11. The bottom plate 11 and the side plate 12 can both include metal materials, such as aluminum. The bottom plate 11 is used as a reflector and reference ground of the antenna, and the side plate 12 is used as a reflector of the antenna. The reference ground and the reflector can ensure that the signal is transmitted in the waveguide cavity, thereby improving the signal radiation efficiency. The dielectric substrate 2 is arranged in the waveguide cavity. The dielectric substrate 2 is used to support the entire antenna structure to ensure the physical stability and mechanical strength of the antenna. At the same time, the dielectric substrate 2 is also used to transmit electromagnetic waves. The dielectric constant and thickness of the dielectric substrate 2 determine the transmission speed of the electromagnetic waves and the resonant frequency and radiation efficiency of the antenna. The radiation structure 3 is arranged in the waveguide cavity and is located on the side of the dielectric substrate 2 away from the bottom plate 11. A plurality of slot pairs are arranged on the radiation structure 3, and the slot pairs are used to radiate electromagnetic waves. Among them, the radiation structure 3 is formed by rotating and splicing at least two radiation components, such as Figure 2 As shown. For two radiation components that are spliced and connected, one of them is provided with a protrusion JUT at one end close to the other, and the other is provided with a receiving portion LG adapted to the protrusion JUT. At least one end of the radiation component is provided with a protrusion JUT or a receiving portion LG. It should be noted that the "adaptation" here means that the shape of the protrusion JUT can match the shape inside the receiving portion LG, and the two radiation components are relatively stably fitted together. For example, the protrusion JUT is a protruding structure with a rectangular cross-section, and the cross-section of the receiving portion LG is also a rectangle. The shapes and sizes of the two rectangles are basically the same, which can improve the accuracy of splicing and the stability of the radiation structure. Dividing a radiation structure with a relatively large size into a plurality of smaller radiation components, which are manufactured separately, and then spliced to form a complete radiation structure can reduce the process difficulty and improve the product yield.
[0072] Specifically, Figure 2 2a and 2b respectively show partial schematic diagrams of two radiation components 30, Figure 2 c shows a schematic diagram of the two after splicing. Figure 2a and 2b, each radiation component 30 includes a first support member 301 and a second support member 302 stacked together, and a radiation electrode 303 sandwiched between the first support member 301 and the second support member 302, the first support member 301 is closer to the dielectric substrate 2 than the second support member 302, a plurality of radiation electrodes 303 are spliced to form a first electrode, and a plurality of slot pairs 5 for radiating electromagnetic waves are provided on the first electrode. Here, the first support member 301 and the second support member 302 are provided on the one hand to protect the radiation electrode 303 and prevent the radiation electrode 303 from deforming and bending to affect the radiation efficiency, and on the other hand, the first support member 301 and the second support member 302 can also be used as dielectric materials to improve the impedance of the antenna. In one example, the material of the first support member 301 and the second support member 302 may include glass. It should be noted that, in order to ensure the protective effect of the supporting member on the radiation electrode 303, the orthographic projection of the first supporting member 301 on the dielectric substrate 2 is set to cover the orthographic projection of the radiation electrode 303 on the dielectric substrate 2, that is, the radiation electrode 303 can be directly made on the first supporting member 301, and then combined with the second supporting member 302. The orthographic projection of the second supporting member 302 on the dielectric substrate 2 covers at least part of the orthographic projection of the radiation electrode 303 on the dielectric substrate 2, and the part of the radiation electrode 303 not covered by the second supporting member 302 is used to form the protrusion JUT mentioned above (such as Figure 2 a) or the accommodation portion LG (as shown in Figure 2 b), and then it can be spliced with other radiation components. Here, in order to reduce the complexity of the process, the first support member 301 and the second support member 302 can be set to have exactly the same size, and then the protrusion JUT or the receiving portion LG for splicing can be formed by staggered assembly.
[0073] Reference Figure 2c. After the two radiation components are spliced, the radiation component 30 on the left is provided with a protrusion JUT at the splicing location, and the radiation component 30 on the right is provided with a receiving portion LG at the splicing location, and the protrusion JUT and the receiving portion LG are adapted. For the convenience of explanation, the end of the radiation component 30 on the left close to the splicing location is referred to as the first splicing end 3001, and the end of the radiation component on the right close to the splicing location is referred to as the second splicing end 3002. Among them, the first splicing 3001 includes the protrusion JUT, and the second splicing end 3002 includes the receiving portion LG. It should be noted that the two ends of the splicing of the two radiation components at the splicing location are respectively referred to as the first splicing end and the second splicing end only for the convenience of explaining the specific structure of the splicing location. For the radiation component on the left, the end opposite to the first splicing end may be provided with a protrusion JUT or a receiving portion LG, or may be provided with neither a protrusion JUT nor a receiving portion LG. The specific structure is provided according to the splicing method. Of course, for the radiation component on the right side, the end arranged opposite to the second splicing end can also be designed differently according to the splicing method.
[0074] Continue to refer to Figure 2 c. For the radiation component on the left, the edge of the first support member 301 close to the second splicing end 3002 coincides with the edge of the radiation electrode 303 close to the second splicing end 3002, and the orthographic projections of the edge of the radiation electrode 303 close to the second splicing end 3002 and the edge of the second support member 302 close to the second splicing end 3002 on the dielectric substrate 2 have a first distance d1, and the edge of the second support member 302 close to the second splicing end 3002 is farther away from the second splicing end 3002 than the edge of the radiation electrode 303 close to the second splicing end 3002. In other words, with the second splicing end 3002 as a reference, the radiation electrode 303 and the first support member 301 are convex compared to the second support member 302, and the protruding distance is the first distance d1. The protruding portion of the radiation electrode 303 and the portion of the second support member 302 constitute the protruding portion JUT of the first splicing portion. The protruding portion JUT is at Figure 1 The cross-section diagram is rectangular.
[0075] Correspondingly, for the radiation component on the right side, the edge of the first support member 301 close to the first splicing end 3001 coincides with the edge of the radiation electrode 303 close to the first splicing end 3001, and the orthographic projections of the edge of the radiation electrode 303 close to the first splicing end 3001 and the edge of the second support member 302 close to the first splicing end 3001 on the dielectric substrate 2 also have a first distance d1, and the edge of the second support member 302 close to the first splicing end 3001 is closer to the first splicing end 3001 than the edge of the radiation electrode 303 close to the first splicing end 3001. In other words, with the first splicing end 3001 as a reference, the radiation electrode 303 and the first support member 301 are retracted compared to the second support member 302, and the retracted distance is the first distance d1. The edge of the second support member 302 close to the first splicing end 3001, the edge of the radiation electrode 303 close to the first splicing end 3001, and the edge of the first support member 301 close to the first splicing end 3001 jointly define the accommodation portion LG. Accommodation LG Figure 2 The shape in the cross-sectional view in c is an L-shaped structure, which is adapted to the rectangle so that the radiation component on the right can be spliced with the radiation component on the left.
[0076] It should be noted that the "edges of the two overlap" in the above description refers to the side edges of the two overlap. For example, the edge of the first support member close to the first splicing end overlaps with the edge of the radiation electrode close to the first splicing end, which means that the orthographic projection of the side edge of the first support member close to the first splicing end on the dielectric substrate overlaps with the orthographic projection of the side edge of the radiation electrode close to the first splicing end on the dielectric substrate. This setting is to achieve good splicing between radiation components and improve product yield.
[0077] The specific structures of the protruding portion JUT and the accommodating portion LG are described in detail above. The specific structure of the radiation structure 3 formed by splicing a plurality of radiation components will be described below in conjunction with a specific embodiment.
[0078] In some examples, reference Figure 3 , Figure 3 The radiation structure 3 in the figure is formed by splicing two radiation components. For the convenience of explanation, the radiation component on the left is called the first radiation component 31, and the radiation component on the right is called the second radiation component 32. The orthographic projections of the first support member 311 / 321 and the second support member 312 / 322 in the two radiation components on the dielectric substrate 2 are both rectangular, and the orthographic projections of the radiation electrodes 313 / 323 in the two radiation components on the dielectric substrate 2 are fan-shaped, and the central angle of the fan-shaped is 180°, as shown in FIG. Figure 4 and Figure 5As shown, the orthographic projection of the first electrode formed by splicing two radiation electrodes on the dielectric substrate 2 is a circle. A protrusion JUT is provided on the side of the first radiation component 31 close to the second radiation component 32, and a receiving portion LG adapted to the protrusion JUT is provided on the side of the second radiation component 32 close to the first radiation component 31.
[0079] Specifically, for the first radiation component 31, refer to Figure 3 , which includes a first support member 311 and a second support member 312 stacked together, and a radiation electrode 313 sandwiched between the first support member 311 and the second support member 312, wherein the first support member 311 is closer to the dielectric substrate 2 than the second support member 312. The orthographic projection of the first support member 311 on the dielectric substrate 2 covers the orthographic projection of the radiation electrode 313 on the dielectric substrate 2, and covers the orthographic projection of the second support member 312 on the dielectric substrate 2, and the orthographic projection of the radiation electrode 313 on the dielectric substrate 2 overlaps with the orthographic projection of the second support member 312 on the dielectric substrate 2. Furthermore, the edge of the first support member 311 close to the second radiation component 32 coincides with the edge of the radiation electrode 313 close to the second radiation component 32, and the orthographic projections of the edge of the radiation electrode 313 close to the second radiation component 32 and the edge of the second support member 312 close to the first radiation component 31 on the dielectric substrate 2 have a first distance d1, and with the second radiation component 32 as a reference, the radiation electrode 313 and the first support member 311 are convex compared to the second support member 312, and the protruding portion JUT constitutes the protruding portion JUT.
[0080] Correspondingly, the second radiation component 32 includes a first support member 321, a second support member 322, and a radiation electrode 323 sandwiched between the first support member 321 and the second support member 322, and the first support member 321 is closer to the dielectric substrate 2 than the second support member 322. The orthographic projection of the first support member 321 on the dielectric substrate 2 covers the orthographic projection of the radiation electrode 323 on the dielectric substrate 2, the orthographic projection of the radiation electrode 323 on the dielectric substrate 2 overlaps with the orthographic projection of the second support member 322 on the dielectric substrate 2, and the orthographic projection of the second support member 322 on the dielectric substrate 2 covers the orthographic projection of the first support member 321 on the dielectric substrate 2. Furthermore, the edge of the first support member 321 close to the first radiation component 31 coincides with the edge of the radiation electrode 323 close to the first radiation component 31, and the orthographic projections of the edge of the radiation electrode 323 close to the first radiation component 31 and the edge of the first support member 321 close to the first radiation component 31 on the dielectric substrate 2 have a first distance d1, and with the first radiation component 31 as a reference, the radiation electrode 323 and the first support member 321 are retracted compared to the second support member 322, and the retracted portion constitutes the accommodating portion LG.
[0081] Based on the above structure, by aligning the protruding portion JUT of the first radiation component 31 with the accommodating portion LG of the second radiation component 32, the first radiation component 31 and the second radiation component 32 can be spliced to form a complete radiation structure 3. Since the size of each radiation component is smaller than that of the radiation structure 3, the difficulty of preparing the radiation component is lower than that of preparing the radiation structure 3, and the product yield can also be improved.
[0082] In some other examples, the radiation structure 3 is formed by splicing N radiation components, where N is a positive integer greater than 2. Figure 6-7 , Figure 6 The radiation structure 3 in the figure is formed by splicing four radiation components 31 / 32 / 33 / 34. The orthographic projections of the first support member and the second support member in the radiation component on the dielectric substrate 2 are both rectangular, and the orthographic projection of the radiation electrode on the dielectric substrate 2 is a sector, and the central angle of the sector is 90°, so that the orthographic projection of the first electrode formed by splicing four radiation electrodes on the dielectric substrate 2 is a circle. For each radiation component, it needs to be spliced and connected with the other two radiation components, so a protrusion JUT or a receiving portion LG for splicing is provided at both ends of each radiation component, such as Figure 7 As shown, Figure 7 The specific structure of a radiation component 32 is shown in FIG. Figure 7 The left side is a reference, the first support member 311 and the radiation electrode 323 are convex compared to the second support member 322, and the convex portion forms a convex portion JUT. Figure 7 As a reference, the first support member 311 and the radiation electrode 323 are retracted compared to the second support member 322, and the retracted portion forms the accommodation portion LG. The thickness of the protrusion JUT and the depth of the accommodation portion LG are both the total thickness of the first support member 321 and the radiation electrode 323.
[0083] For a radiation structure 3 formed by splicing N radiation components, protrusions JUT or accommodation portions LG may be respectively provided at both ends of the spliced components, which may specifically include the following two examples.
[0084] In one example, referring to Figure 8a. A projection JUT is provided at one end of the radiation component 30, and a receiving portion LG is provided at the other end, so that the projection JUT of the previous radiation component 30 can be spliced with the receiving portion LG of the next radiation component 30, and multiple radiation components 30 can be spliced in sequence to form a radiation structure 3. Preferably, the sizes of each radiation component 30 can be exactly the same, which can simplify the process. For the convenience of explanation, the side of the radiation component 30 provided with the receiving portion LG is called the first side, and the side provided with the projection JUT is called the second side. Wherein, for each radiation component 30, it includes a first support member 301 and a second support member 302 stacked, and a radiation electrode 303 sandwiched between the first support member 301 and the second support member 302, and the first support member 301 is closer to the dielectric substrate 2 than the second support member 302. The orthographic projection of the first support member 301 on the dielectric substrate 2 covers the orthographic projection of the radiation electrode 303 on the dielectric substrate 2, and the orthographic projection of the second support member 302 on the dielectric substrate 2 covers part of the orthographic projection of the radiation electrode 303 on the dielectric substrate 2. Further, the edge of the first support member 301 close to the first side coincides with the edge of the radiation electrode 303 close to the first side, and the edge of the first support member 301 close to the second side coincides with the edge of the radiation electrode 303 close to the second side. A first distance d1 exists between the orthographic projection of the edge of the second support member 302 close to the first side and the edge of the radiation electrode 303 close to the first side on the dielectric substrate 2, and the edge of the second support member 302 close to the first side covers the edge of the radiation electrode 303 close to the first side; the orthographic projection of the edge of the second support member 302 close to the second side and the edge of the radiation electrode 303 close to the second side on the dielectric substrate 2 also has a first distance d1, and the edge of the radiation electrode 303 close to the second side covers the edge of the second support member 302 close to the second side. The edge of the first support member 301, the edge of the second support member 302 and the edge of the radiation electrode 303 located on the first side constitute the accommodating portion LG, and the thickness of the accommodating portion LG is the total thickness of the first support member 301 and the radiation electrode 303. The edge of the first support member 301, the edge of the second support member 302 and the edge of the radiation electrode 303 located on the second side constitute the protruding portion JUT, and the depth of the protruding portion JUT is the total thickness of the first support member 301 and the radiation electrode 303.
[0085] Reference Figure 8b, taking three spliced radiation components as an example, the three radiation components are respectively referred to as the first radiation component 31, the second radiation component 32 and the third radiation component 33. Among them, the first radiation component 31 is provided with a protrusion JUT on the side close to the second radiation component 32, the second radiation component 32 is provided with a receiving portion LG on the side close to the first radiation component 31, the second radiation component 32 is provided with a receiving portion LG on the side close to the third radiation component 33, and the third radiation component 33 is provided with a protrusion JUT on the side close to the second radiation component 32. The thickness of each protrusion JUT and the depth of each receiving portion LG are equal to the total thickness of the first support member and the radiation electrode, and the width of each protrusion JUT and each receiving portion LG is the first distance d1.
[0086] In another example, both ends of the radiation component are provided with a protrusion JUT, or both ends are provided with a receiving portion LG. For the sake of convenience, the radiation component with the protrusion JUT at both ends is called a first-type radiation component, and the radiation component with the receiving portion LG at both ends is called a second-type radiation component. The first-type radiation component and the second-type radiation component are spliced in sequence at intervals to form the radiation structure 3. It can be understood that in order to ensure that the number of protrusions JUT and receiving portions LG is equal, the number of radiation components in this embodiment is N=2k, and k is a positive integer greater than 1. That is, the number of radiation components is an even number, specifically including k first-type radiation components and k second-type radiation components.
[0087] Among them, refer to Fig. 9 a. The first type of radiation component includes a first support member 301 and a second support member 302 stacked together, and a radiation electrode 303 sandwiched between the first support member 301 and the second support member 302. The first support member 301 is closer to the dielectric substrate 2 than the second support member 302. The orthographic projection of the first support member 301 on the dielectric substrate 2 covers the orthographic projection of the radiation electrode 303 on the dielectric substrate 2 and the orthographic projection of the second support member 302 on the dielectric substrate 2. Further, the edges of the first support member 301 on both sides of the radiation component overlap with the edges of the radiation electrode 303 on both sides of the radiation component, and the edges of the second support member 302 on both sides of the radiation component and the orthographic projections of the edges of the radiation electrode 303 on both sides of the radiation component on the dielectric substrate 2 have a first distance d1, and the second support member 302 is retracted compared to the first support member 301 and the radiation electrode 303. The height of the protrusions JUT on both sides of the first type of radiation component is the total thickness of the first support member 301 and the radiation electrode 303, and the width is the first distance d1.
[0088] Reference Fig. 9b. The second type of radiation component includes a first support member 301 and a second support member 302 stacked together, and a radiation electrode 303 sandwiched between the first support member 301 and the second support member 302, wherein the first support member 301 is closer to the dielectric substrate 2 than the second support member 302. The orthographic projection of the second support member 302 on the dielectric substrate 2 covers the orthographic projection of the first support member 301 on the dielectric substrate 2, and the orthographic projection of the first support member 301 on the dielectric substrate 2 covers the orthographic projection of the radiation electrode 303 on the dielectric substrate 2. Further, the edges of the first support member 301 on both sides of the radiation component coincide with the edges of the radiation electrode 303 on both sides of the radiation component, and the orthographic projections of the edges of the second support member 302 on both sides of the radiation component and the edges of the radiation electrode 303 on both sides of the radiation component on the dielectric substrate 2 are both at a first distance d1, and the second support member 302 is protruding compared to the first support member 301 and the radiation electrode 303. The depth of the accommodation portion LG on both sides of the second type radiation component is the total thickness of the first support member 301 and the radiation electrode 303 , and the width is the first distance d1 .
[0089] In this embodiment, three spliced radiation components are taken as an example. Fig. 9 c, the three radiation components are respectively referred to as the first radiation component 31, the second radiation component 32 and the third radiation component 33. The first radiation component 31 and the second radiation component 32 are both first-type radiation components, and the second radiation component 32 is a second-type radiation component. That is, a protrusion JUT is provided on the side of the first radiation component 31 close to the second radiation component 32, a receiving portion LG is provided on the side of the second radiation component 32 close to the first radiation component 31, a receiving portion LG is provided on the side of the second radiation component 32 close to the third radiation component 33, and a protrusion JUT is provided on the side of the third radiation component 33 close to the second radiation component 32. The thickness of each protrusion JUT and the depth of each receiving portion LG are both equal to the total thickness of the first support member and the radiation electrode, and the width of each protrusion JUT and each receiving portion LG is the first distance.
[0090] Based on the above structure, by aligning the protruding portions JUT and the accommodating portions LG of the multiple radiation components in sequence, the radiation components can be spliced together to form a complete radiation structure 3. Since the size of each radiation component is smaller than that of the radiation structure 3, the difficulty of preparing the radiation component is lower than that of preparing the radiation structure 3, and the product yield can also be improved.
[0091] In some examples, the positive projection of the radiation electrode in each radiation component on the dielectric substrate 2 is fan-shaped. After multiple radiation components are spliced to form the radiation structure 3, multiple radiation electrodes are spliced to form a circular first electrode. The first electrode is provided with multiple slot pairs 5 for radiating electromagnetic waves, such as Fig.10 shown.
[0092] Reference Figure 10-11 , the slot pair 5 includes a first slot 51 and a second slot 52 with different extension directions. In the present disclosure, the extension direction of the first slot 51 is perpendicular to the extension direction of the second slot 52. It should be noted that the first slot 51 and the second slot 52 are both narrow slot openings, so the center of the first slot 51 is the center along its extension direction, and the center of the second slot 52 is the center along its extension direction. The extension direction here is the length direction of the slot opening. Fig.10 , each slot pair 5 is arranged to form a plurality of nested groups, the slot pairs 5 in each group are arranged in sequence, and the connecting line of the centers of each slot pair 5 in each group forms a circle, the centers of the circles formed by each group of slot pairs 5 are the same, forming a concentric circle, the center of the concentric circle is the same as the center of the radiation electrode 3, and for the convenience of description, the center of the concentric circle is referred to as the center O in the following text. In some examples, the difference between the radii of two adjacent circles in the concentric circle is d, d is less than λ0; λ0 is the wavelength of air. It should be noted that the center of the slot pair 5 is the intersection of the extension direction of the first slot 51 and the extension direction of the second slot 52, where the extension direction of the first slot 51 is perpendicular to the extension direction of the second slot 52, and the first slot 51 is on the perpendicular bisector of the second slot 52, so the center of the slot pair 5 is the center of the second slot 52.
[0093] Fig.11 Schematic diagram of the specific structure of a gap pair 5. Fig.11 , the angle between the line connecting the center and the center of the first slit 51 and the extension direction of the first slit 51 is equal to the angle between the line connecting the center and the center of the second slit 52 and the extension direction of the second slit 52, and the angle is θ1. The angle between the line connecting the center and the center of the first slit 51 and the line connecting the center and the center of the second slit 52 is β1. The length of the first slit 51 and the length of the second slit 52 are both L. The vertical distance between the first slit 51 and the second slit 52 is δ. The distance between the center of the first slit 51 and the center of the circle is ρ1, and the distance between the center of the second slit 52 and the center of the circle is ρ2. The above parameters satisfy:
[0094]
[0095] ρ2sinθ1-ρ1cosθ1=L+δ
[0096]
[0097] in, is the first kind Hankel function, is the second kind of Hankel function, λ gis the waveguide wavelength. Such a design can ensure that the first slot 51 and the second slot 52 of the same slot pair 5 are excited with equal amplitude. In some examples, the length of the first slot and the second slot is 5 mm-13 mm, and the width is 0.2 mm-2 mm.
[0098] In some examples, reference Fig.12 The antenna also includes a plurality of feeding structures 4 for feeding the antenna. Taking four feeding structures 4 as an example, the four feeding structures 4 are evenly distributed around the center of the bottom plate 11. The antenna has two working modes, namely, a rotation mode and a normal mode. When the antenna works in the rotation mode, the signals on the four feeding structures 4 are four excitation signals with the same amplitude and different phases. When the antenna works in the normal mode, the signals on the four feeding structures 4 are four signals with the same amplitude and the same phase.
[0099] In some examples, reference Fig.12 The antenna also includes a retaining wall group arranged on the side of the bottom plate 11 close to the dielectric substrate 2, and the retaining wall group includes a plurality of retaining walls 6 arranged coaxially, and the material of the retaining walls 6 includes a conductive metal material, such as aluminum, copper, etc. The positive projection of each retaining wall 6 on the dielectric substrate 2 is a first figure, and the center of the first figure coincides with the center O of the bottom plate 11. Exemplarily, the first figure can be a rectangle or a circle. The distance between the one of the plurality of retaining walls 6 closest to the center of the bottom plate 11 and the center of the bottom plate 11 is greater than the distance between the feeding structure 4 and the center of the bottom plate 11, that is, each retaining wall 6 is arranged around the feeding structure 4. In one example, the distance between any two adjacent retaining walls 6 is equal. Setting a retaining wall group can turn the antenna into a slow-wave antenna, thereby exciting high-order harmonics that meet the radiation conditions and achieving effective radiation.
[0100] In other examples, a slow-wave medium may be filled between the bottom plate 11 and the radiation structure 3 to achieve the effect of a slow-wave antenna. The slow-wave medium layer may be a single-layer structure or a multi-layer structure. The slow-wave medium layer may include, for example, a polytetrafluoroethylene layer or an ethylene-vinyl acetate copolymer.
[0101] In some examples, reference Fig.13 The antenna further includes a plurality of radiation probes 7 penetrating the first slot 31 and the second slot 32. Fig.13 As shown, the radiation probe 7 is arranged at the center of each slot. The radiation probe 7 includes a main branch 71 and two branch nodes 72. The main branch 71 extends through the slot to the waveguide cavity to receive the signal. The branch node 72 is arranged on the side of the radiation electrode 3 away from the dielectric substrate 22, and radiates the signal received from the main branch to the outside. The radiation probe 7 can improve the radiation efficiency and signal transmission rate of the radiation electrode 3.
[0102] In some examples, reference Fig.14The antenna further includes an auxiliary electrode 8 disposed between the radiation electrode 3 and the bottom plate 11. The radiation electrode 3, the auxiliary electrode 8 and the waveguide structure 1 together constitute a double-layer radial line waveguide structure. The double-layer radial line waveguide structure has high power capacity and high transmission rate, can transmit high-power microwave signals, evenly couple microwaves and radiate electromagnetic waves outward in the form of circular polarization. It should be noted that the specific position of the auxiliary electrode 8 is not limited in the present disclosure. Fig.14 In the example, the auxiliary electrode 14 is disposed between the dielectric substrate 2 and the first gap GAP. The specific position of the auxiliary electrode 8 can also be adjusted according to the working frequency band of the antenna and the impedance matching condition.
[0103] In some examples, continue to refer to Fig.14 , the distance between the radiation electrode 3 and the bottom plate 11 is recorded as H, and the waveguide wavelength of the antenna is recorded as λg, where H<λg / 2. Such a design can make the antenna structure single-mode transmission, thereby increasing the transmission distance and transmission bandwidth of the antenna, and improving the anti-interference ability and stability of the antenna.
[0104] In some examples, continue to refer to Fig.14 The antenna further includes a plurality of screws 9, which sequentially penetrate the dielectric substrate 2 and the bottom plate 11 and fix the two relatively. The nut of the screw 9 is arranged between the dielectric substrate 2 and the radiation electrode 3, and defines a first gap GAP. The first gap GAP is filled with air. The provision of the air dielectric layer is equivalent to adding an additional "spring" effect to the antenna, which can improve the frequency response of the antenna and reduce signal loss and reflection. In addition, the air dielectric layer can also change the impedance characteristics of the antenna and optimize the performance and bandwidth of the antenna.
[0105] In some examples, continue to refer to Fig.14 The antenna further includes a plurality of switch units 10 disposed on the side of the radiation structure 3 away from the bottom plate 11. The switch units 10 are disposed one-to-one corresponding to the first slot 31 and the second slot 32 on the radiation electrode 3, and the switch units 10 are configured to independently control the switch state of the corresponding slots. That is, the switch units 10 can control whether the slots can radiate electromagnetic wave signals to the outside world.
[0106] Exemplarily, the switch unit 10 in the embodiment of the present disclosure may be a PIN diode or a variable reactance diode Varactor. In this case, the PIN diode or the variable reactance diode Varactor may be integrated with the gap to achieve dual-value amplitude or continuous amplitude control capability. For example: taking the switch unit 10 as an example of a PIN diode, the input bias voltage to the PIN diode is controlled to control the forward bias / reverse bias of the PIN diode. When the gap is required to be in the open state, at this time, the input bias voltage to the PIN diode is greater than its conduction threshold, and the PIN diode is turned on; when the gap is required to be in the closed state, at this time, the input bias voltage to the PIN diode is less than its conduction threshold, and the PIN diode is turned off.
[0107] Exemplarily, the switch unit 10 in the embodiment of the present disclosure may be a liquid crystal switch. That is, another dielectric substrate is provided opposite to the dielectric substrate 2, a patch electrode is provided on the dielectric substrate, and an adjustable dielectric layer is provided between the layer where the patch electrode is located and the radiation electrode, for example, the adjustable dielectric layer is a liquid crystal layer. By changing the voltage applied to the patch electrode, the deflection angle of the liquid crystal molecules in the liquid crystal layer is changed, thereby realizing continuous regulation of the amplitude of the radio frequency signal radiated from the gap.
[0108] Exemplarily, the switch unit 10 in the embodiment of the present disclosure may also be a MEMS switch. For example, another dielectric substrate is provided opposite to the dielectric substrate 2, and the dielectric substrate is a flexible substrate, on which patch electrodes are provided, and the patch electrodes are provided in a one-to-one correspondence with the gaps. At this time, by applying a voltage to the patch electrodes, the distance between the patch electrodes and the gaps is adjusted under the action of the electric field force, so that the radiation amplitude of the radio frequency signal can be continuously controlled.
[0109] The present disclosure also provides Fig.14 The simulation result diagram of the antenna in the figure. Among them, during the simulation, the parameters of the antenna are: the size of the bottom plate 11 is 312mm*312mm; the height of the side plate 12 is 6.7mm; the distance between the bottom plate 11 and the radiation structure 3 is 4.2mm; the thickness of the dielectric substrate PTFE is 2.5mm; the thickness of the air layer (i.e., the first gap) is 1.2mm; the thickness of the first support member and the second support member of the radiation component are both 0.5mm; the size of the first gap and the second gap is 9mm long*1mm wide; the concentric circle spacing d2 formed by each group of gap pairs is 20mm.
[0110] Fig.15 for Fig.14 The radiation pattern of the medium antenna at the operating frequency of 12 GHz; Fig.16 for Fig.14 Normalized E-plane radiation pattern of the antenna at an operating frequency of 12 GHz; Fig.17 for Fig.14The normalized H-plane radiation pattern of the antenna at an operating frequency of 12 GHz. As can be seen from the figure, the side lobe of the antenna radiation pattern is less than -20 dB, and the performance is good. Fig.18 for Fig.14 The simulation result of the return loss S11 of the antenna in the figure. It can be seen from the figure that when the antenna works at 10GHz-14GHz, S11 is less than -16dB, which means that there is less reflection of the signal and the signal transmission quality is good. Fig.19 for Fig.14 Axial ratio diagram of the antenna. It can be seen from the figure that when the antenna works at 10GHz-14GHz, the axial ratio is less than 3.2dB, which means that the circular polarization purity of the antenna is high, the circular polarization performance is good, and it has good stability and reliability.
[0111] In some examples, reference Fig. 20 The antenna also includes a power divider electrically connected to the plurality of feeding structures, and the power divider provides working signals of different modes for the feeding structures. Taking four feeding structures as an example, the four feeding structures are evenly distributed around the center of the bottom plate 11. For the convenience of description, the feeding structure on the left side of the center O of the bottom plate 11 is called the first feeding structure 41, the feeding structure above the center O of the bottom plate 11 is called the second feeding structure 42, the feeding structure on the right side of the center O of the bottom plate 11 is called the third feeding structure 43, and the feeding structure O below the center of the bottom plate 11 is called the fourth feeding structure 44. Fig.21 and Fig. 22 When the antenna works in the rotation mode, the power divider provides four excitation signals with the same amplitude and different phases to the four feeding structures. Specifically, the phases of the excitation signals provided by the power divider to the first to fourth feeding structures are 0°, 90°, 180° and 270° respectively in the clockwise direction. When the antenna works in the normal mode, the power divider provides four signals with the same amplitude and phase to the four feeding structures.
[0112] Specifically, the power divider includes a dielectric layer, a reference electrode layer disposed between the dielectric layer and the base plate 11, and a microstrip transmission structure disposed on the side of the dielectric layer away from the base plate 11, and the microstrip transmission structure, the dielectric layer and the reference electrode layer constitute a microstrip line.
[0113] In one example, the power divider may be a Wilkinson power divider. Fig.21The microstrip line structure includes a signal input port, first to fourth signal output ports, and first to third microstrip transmission lines. Specifically, the signal input port is connected to the first end of the first microstrip transmission line DTL1; the second end and the third end of the first microstrip transmission line DTL1 are respectively connected to the first ends of the second microstrip transmission line DTL2 and the third microstrip transmission line DTL3; the second end and the third end of the second microstrip transmission line DTL2 are respectively connected to the first signal output port and the second signal output port; the second end and the third end of the third microstrip transmission line DTL3 are respectively connected to the third signal output port and the fourth signal output port. The first signal output port is connected to the first feeding structure 41, the second signal output port is connected to the second feeding structure 42, the third signal output port is connected to the third feeding structure 43, and the fourth signal output port is connected to the fourth feeding structure 44. By adjusting the length and width of each microstrip transmission line, the impedance matching problem between the lines can be adjusted to realize the function of the excitation signal with the same phase or different phase for the feeding structure.
[0114] Continue to refer to Fig.21 The Wilkinson power divider disclosed in the present invention is also provided with first to third isolation resistors. Among them, the first isolation resistor R1 is arranged between the second end and the third end of the first microstrip transmission line DTL1, the second isolation resistor R2 is arranged between the second end and the third end of the second microstrip transmission line DTL2, and the third isolation resistor R3 is arranged between the second end and the third end of the third microstrip transmission line DTL3. Setting the first to third isolation resistors can increase the isolation between each branch and effectively widen the working bandwidth of the power divider. Preferably, the resistance value of the first to third isolation resistors is 100 ohms.
[0115] In another example, referring to Fig. 22 , the power divider can be a Butler network matrix board. In this embodiment, the microstrip line structure includes the first to fourth directional couplers. Among them, the input ports of the first directional coupler DC1 and the fourth directional coupler DC4 are used as the signal input ends of the microstrip transmission structure; the output port and the coupling port of the first directional coupler DC1 are respectively connected to the input ports of the second directional coupler DC2 and the third directional coupler DC3; the isolation port of the second directional coupler DC2 is connected to the output port of the fourth directional coupler DC4, and the output port and the coupling port are respectively connected to the first feeding structure 41 and the third feeding structure 43; the isolation port of the third directional coupler DC3 is connected to the coupling port of the fourth directional coupler DC4, and the output port and the coupling port are respectively connected to the second feeding structure 42 and the fourth feeding structure 44. At this time, the normal pencil beam can be realized by controlling the two input ports of the first directional coupler DC1 and the fourth directional coupler DC4 of the Butler network matrix board.
[0116] The present disclosure also provides Fig. 20 The simulation results of the antenna in Figure 2 are shown in Figure 2. Fig.23 for Fig. 20 The radiation pattern of the medium antenna at the operating frequency of 12 GHz; Fig.24 for Fig. 20 Normalized E-plane radiation pattern of the middle antenna at an operating frequency of 12 GHz; Fig.25 for Fig. 20 The normalized H-plane radiation pattern of the antenna in the figure when the operating frequency is 12GHz. It can be seen from the figure that the side lobe of the antenna radiation pattern is less than -22dB, which is consistent with Fig.14 Compared with the antenna in , the performance of the antenna is also improved after adding the power divider. Fig.26 for Fig. 20 The return loss S11 simulation result of the antenna in the figure. It can be seen from the figure that when the antenna works at 10GHz-14GHz, S11 is less than -16dB. Fig. 27 for Fig. 20 The axial ratio diagram of the antenna in the figure. It can be seen from the figure that when the antenna works at 10GHz-14GHz, the axial ratio is less than 3dB, which is consistent with Fig.14 Compared with the antenna in , the circular polarization performance of the antenna is improved after adding the power divider, and the antenna has better stability and reliability.
[0117] Figure 28-29 To adopt this disclosure Figure 6 The measured picture of the antenna after the radiation structure is assembled by splicing four radiation components. Fig.28 is the measured E-plane radiation pattern of the antenna when the operating frequency is 12 GHz, Fig.29 The measured H-plane radiation pattern of the antenna when the operating frequency is 12 GHz. As can be seen from the figure, the side lobe of the antenna is less than -18 dB, which means that the antenna disclosed in the present invention has good transmission efficiency and radiation efficiency, and the signal transmission quality is good.
[0118] An embodiment of the present disclosure provides an electronic device, and the electronic device includes the antenna in the above embodiment. The electronic device also includes a transceiver unit, a radio frequency transceiver, a signal amplifier, a power amplifier, and a filtering unit. The antenna can be used as a transmitting antenna or a receiving antenna. Among them, the transceiver unit may include a baseband and a receiving end, and the baseband provides a signal of at least one frequency band, for example, a 2G signal, a 3G signal, a 4G signal, a 5G signal, etc., and sends a signal of at least one frequency band to the radio frequency transceiver. After the transparent antenna in the communication system receives the signal, it can be processed by the filtering unit, the power amplifier, the signal amplifier, and the radio frequency transceiver (not shown) and then transmitted to the receiving end in the transceiver unit. The receiving end may be, for example, a smart gateway.
[0119] Furthermore, the RF transceiver is connected to the transceiver unit, and is used to modulate the signal sent by the transceiver unit, or to demodulate the signal received by the transparent antenna and transmit it to the transceiver unit. Specifically, the RF transceiver may include a transmitting circuit, a receiving circuit, a modulation circuit, and a demodulation circuit. After the transmitting circuit receives various types of signals provided by the substrate, the modulation circuit can modulate various types of signals provided by the baseband and then send them to the antenna. The transparent antenna receives the signal and transmits it to the receiving circuit of the RF transceiver. The receiving circuit transmits the signal to the demodulation circuit, and the demodulation circuit demodulates the signal and transmits it to the receiving end.
[0120] Furthermore, the RF transceiver is connected to a signal amplifier and a power amplifier, and the signal amplifier and the power amplifier are connected to a filter unit, and the filter unit is connected to at least one antenna. In the process of sending signals in the communication system, the signal amplifier is used to improve the signal-to-noise ratio of the signal output by the RF transceiver and then transmit it to the filter unit; the power amplifier is used to amplify the power of the signal output by the RF transceiver and then transmit it to the filter unit; the filter unit may specifically include a duplexer and a filter circuit, and the filter unit combines the signals output by the signal amplifier and the power amplifier and filters out the clutter before transmitting them to the transparent antenna, and the antenna radiates the signal. In the process of receiving signals in the communication system, the antenna receives the signal and transmits it to the filter unit, and the filter unit filters out the clutter from the signal received by the antenna and then transmits it to the signal amplifier and the power amplifier, and the signal amplifier amplifies the signal received by the antenna to increase the signal-to-noise ratio; the power amplifier amplifies the power of the signal received by the antenna. The signal received by the antenna is processed by the power amplifier and the signal amplifier and then transmitted to the RF transceiver, and the RF transceiver then transmits it to the transceiver unit.
[0121] In some examples, the signal amplifier may include various types of signal amplifiers, such as a low noise amplifier, which is not limited herein.
[0122] In some examples, the antenna provided by the embodiments of the present disclosure also includes a power management unit, which is connected to a power amplifier to provide the power amplifier with a voltage for amplifying a signal.
[0123] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.
Claims
1. An antenna, comprising a waveguide structure, a dielectric substrate and a radiation structure; the waveguide structure comprises a bottom plate defining a waveguide cavity and a side plate connected to the edge of the bottom plate; the dielectric substrate and the radiation structure are sequentially arranged in the waveguide cavity in a direction away from the bottom plate; a first gap is provided between the dielectric substrate and the radiation structure; in, The radiation structure is formed by splicing at least two radiation components; for the two spliced radiation components, one of them is provided with a protrusion at one end close to the other, and the other is provided with a receiving portion adapted to the protrusion; at least one end of the radiation component is provided with the protrusion or the receiving portion.
2. The antenna according to claim 1, wherein: The radiation component comprises a first support member and a second support member stacked together, and a radiation electrode sandwiched between the first support member and the second support member; the first support member is closer to the dielectric substrate than the second support member; The orthographic projection of the first supporting member on the dielectric substrate covers the orthographic projection of the radiation electrode on the dielectric substrate; The orthographic projection of the second supporting member on the dielectric substrate covers at least a portion of the orthographic projection of the radiation electrode on the dielectric substrate.
3. The antenna according to claim 2, wherein: For one of the two radiating components that are spliced and connected, the protrusion is provided at the splicing position of the two components, wherein the edge of the first support member close to the other radiating component coincides with the edge of the radiating electrode close to the other radiating component, the edge of the radiating electrode close to the other radiating component and the edge of the second support member close to the other radiating component have a first distance between their orthographic projections on the dielectric substrate, and the edge of the second support member close to the other radiating component is farther away from the other radiating component than the edge of the radiating electrode close to the other radiating component; the edge of the second support member close to the other radiating component, the edge of the first support member close to the other radiating component, and the edge of the radiating electrode close to the other radiating component jointly define the protrusion; For one of the two spliced radiation components, the accommodating portion is provided at the splicing position of the two, wherein the edge of the first support member close to the other radiation component coincides with the edge of the radiation electrode close to the other radiation component, the edge of the radiation electrode close to the other radiation component and the edge of the second support member close to the other radiation component have a first distance between their orthographic projections on the dielectric substrate, and the edge of the second support member close to the other radiation component is closer to the other radiation component than the edge of the radiation electrode close to the other radiation component; the edge of the second support member close to the other radiation component, the edge of the first support member close to the other radiation component, and the edge of the radiation electrode close to the other radiation component jointly define the accommodating portion.
4. The antenna according to claim 3, wherein: The radiation structure is formed by splicing two radiation components, namely a first radiation component and a second radiation component; The protruding portion is disposed on a side of the first radiation component close to the second radiation component; and the accommodating portion is disposed on a side of the second radiation component close to the first radiation component.
5. The antenna according to claim 3, wherein: The radiation structure is formed by splicing N radiation components, where N is a positive integer greater than 2; The three radiation components connected in a spliced manner are respectively the first radiation component, the second radiation component and the third radiation component connected in sequence; the first radiation component is provided with the protruding portion on the side close to the second radiation component, the second radiation component is provided with the accommodating portion on the side close to the first radiation component, the second radiation component is provided with the protruding portion on the side close to the third radiation component, and the third radiation component is provided with the accommodating portion on the side close to the second radiation component.
6. The antenna according to claim 3, wherein: The radiation structure is formed by splicing N radiation components, N=2k, k is a positive integer greater than 1; The three radiation components that are spliced and connected are the first radiation component, the second radiation component and the third radiation component that are connected in sequence; the protrusion is provided on the side of the first radiation component close to the second radiation component, the accommodation portion is provided on the side of the second radiation component close to the first radiation component, the accommodation portion is provided on the side of the second radiation component close to the third radiation component, and the protrusion is provided on the side of the third radiation component close to the second radiation component.
7. The antenna according to claim 2, wherein: The orthographic projection of the radiation electrode on the dielectric substrate is fan-shaped; the radiation electrodes of each radiation component are spliced to form a first electrode, and the orthographic projection of the first electrode on the dielectric substrate is circular; the first electrode includes a plurality of gap pairs.
8. The antenna according to claim 7, wherein: The slot pairs are arranged to form a plurality of nested groups, the slot pairs in each group are spaced apart in sequence, and the connecting lines of the centers of the slot pairs in each group form a circle; the centers of the circles formed by the slot pairs in each group are the same, and they form concentric circles; the centers of the concentric circles are the same as the center of the radiation electrode.
9. The antenna according to claim 8, wherein: The slot pair comprises a first slot and a second slot having different extension directions, and the center of the slot pair is the intersection of the extension direction of the first slot and the extension direction of the second slot; The angle between the line connecting the center of the first slit and the center of the concentric circle and the extension direction of the first slit is equal to the angle between the line connecting the center of the second slit and the center of the circle and the extension direction of the second slit, and the angle is θ1; the angle between the line connecting the center of the first slit and the center of the concentric circle and the line connecting the center of the second slit and the center of the circle is β1; the length of the first slit and the length of the second slit are both L; the extension direction of the first slit is perpendicular to the extension direction of the second slit, and the vertical distance between the first slit and the second slit is δ; the distance between the center of the first slit and the center of the concentric circle is ρ1, and the distance between the center of the second slit and the center of the concentric circle is ρ2; the above parameters satisfy: ρ2sinθ1-ρ1cosθ1=L+δ in, is the first kind Hankel function, is the second kind of Hankel function, λ g is the waveguide wavelength.
10. The antenna according to claim 9, wherein: The difference between the radii of the two circles formed by two adjacent groups of the slot pairs is d, and d is less than λ0; λ0 is the wavelength of air.
11. The antenna according to claim 9, wherein: The antenna also includes a plurality of radiation probes extending through the first slot and the second slot.
12. The antenna according to claim 1, wherein: The antenna also includes four feeding structures, which extend into the waveguide cavity through a second through hole penetrating the bottom plate; with the center of the bottom plate as the rotation center, any two adjacent feeding structures are rotationally symmetrical.
13. The antenna according to claim 12, wherein: The antenna further comprises a power divider electrically connected to the feeding structure; the power divider is arranged on a side of the bottom plate away from the dielectric substrate and at least partially overlaps with an orthographic projection of the bottom plate on the dielectric substrate.
14. The antenna according to claim 13, wherein: The power divider comprises a dielectric layer, a reference electrode layer arranged between the dielectric layer and the bottom plate, and a microstrip transmission structure arranged on a side of the dielectric layer away from the bottom plate; The microstrip transmission structure comprises a signal input port, first to fourth signal output ports, and first to third microstrip transmission lines; The first to third microstrip transmission lines are one-to-two equal power distribution transmission lines; The four signal output ports are respectively connected to different feeding structures; The signal input port is connected to the first end of the first microstrip transmission line; the second end and the third end of the first microstrip transmission line are respectively connected to the first end of the second microstrip transmission line and the third microstrip transmission line; the second end and the third end of the second microstrip transmission line are respectively connected to the first signal output port and the second signal output port; the second end and the third end of the third microstrip transmission line are respectively connected to the third signal output port and the fourth signal output port.
15. The antenna according to claim 13, wherein: The four feeding structures are respectively the first to the fourth feeding structures in the clockwise direction; the power divider comprises a dielectric layer, a reference electrode layer arranged between the second dielectric substrate and the bottom plate, and a microstrip transmission structure arranged on a side of the dielectric layer away from the bottom plate; The microstrip transmission structure includes first to fourth directional couplers; the input port of the first directional coupler is used as the signal input end of the microstrip transmission structure, and the output port and the coupling port are respectively connected to the input ports of the second directional coupler and the third directional coupler; the isolation port of the second directional coupler is connected to the input port of the fourth directional coupler, and the output port and the coupling port are respectively connected to the first feeding structure and the third feeding structure; the isolation port of the third directional coupler is connected to the isolation port of the fourth directional coupler, and the output port and the coupling port are respectively connected to the second feeding structure and the fourth feeding structure.
16. The antenna according to claim 1, wherein: The antenna also includes a baffle group arranged on the side of the bottom plate close to the dielectric substrate; the baffle group includes a plurality of coaxially arranged baffles; the distance between the one of the plurality of baffles closest to the center of the bottom plate and the center of the bottom plate is greater than the distance between the feeding structure and the center of the bottom plate.
17. The antenna according to claim 16, wherein: The distances between any two adjacent retaining walls are equal.
18. The antenna according to claim 1, wherein: The antenna further comprises an auxiliary electrode arranged between the radiation structure and the bottom plate; the radiation structure, the auxiliary electrode and the waveguide structure constitute a double-layer radial line waveguide structure.
19. The antenna according to claim 1, wherein: The distance between the radiation electrode and the bottom plate is H, which is less than λg / 2; λg is the waveguide wavelength.
20. The antenna according to claim 1, wherein The antenna further includes a plurality of screws; the screws sequentially penetrate the dielectric substrate and the bottom plate and fix the two relatively; and the nuts of the screws define the first gap.
21. An electronic device comprising the antenna according to any one of claims 1 to 20.
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Antenna and electronic device
WO2026170451A1