High-power 330 nm laser generating device for photochemical reaction

Abstract

The invention provides a high-power 330 nm laser generating device for photochemical reaction, and relates to the technical field of photochemical synthesis. The laser generating device can output high-power and large-energy ultraviolet laser under the wavelength of 330 nanometers, so that the photochemical synthesis reaction efficiency and the product selectivity are improved; through cooperation of the Q switch driving source, the first Q switch and the second Q switch, 1319 nm laser of a plurality of pulse sequences is generated, and the output power of the fundamental frequency source is effectively improved. In the quadruplicated frequency stage, the shaped large-size and low-power-density 660 nm light spot is injected into the double-LBO crystal for walk-off compensation, so that the common crystal damage problem of the ultraviolet band is avoided, and meanwhile, the efficient nonlinear frequency conversion of the ultraviolet band under the low power density is realized. Ultraviolet light spots are homogenized through the first micro lens pair and the second micro lens pair, the size of ultraviolet light is further adjusted through the fifth shaping lens, and finally high stability and low maintenance cost of the laser are achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of photochemical synthesis, and in particular to a high-power 330 nm laser generating device for photochemical reaction. Background Art

[0002] In the field of photochemical synthesis, ultraviolet lasers, as an important light source, are widely used in the excitation and induction of various chemical reactions. Traditional ultraviolet lasers usually use gas discharge or excimer laser technology, which has problems such as large size, low efficiency, poor stability and high maintenance cost. In addition, existing ultraviolet lasers have certain limitations in wavelength selection and are difficult to meet the requirements of specific photochemical synthesis reactions for precise wavelengths.

[0003] With the development of solid-state laser technology, solid-state ultraviolet lasers have gradually become a research hotspot. However, there is still a gap in the application of high-power solid-state ultraviolet lasers in the 330-nanometer band on the market. Ultraviolet lasers with a wavelength of 330 nanometers have a unique excitation effect on certain specific photochemical synthesis reactions, which can significantly improve reaction efficiency and product selectivity. Therefore, the development of an efficient, stable solid-state ultraviolet laser with a wavelength of precisely 330 nanometers is of great significance for promoting the development of photochemical synthesis technology. Summary of the invention

[0004] The present invention provides a high-power 330 nm laser generating device for photochemical reaction, which is used to solve the problems of poor laser stability and high maintenance cost in the prior art.

[0005] The present invention provides a high-power 330 nm laser generating device for photochemical reaction, comprising: A high-power fundamental frequency source comprises a first laser module, a second laser module, a resonant cavity mirror, an output coupling mirror, an optical rotation crystal, a first Q switch, a second Q switch, a birefringent filter, and a thin-film polarizer, wherein the resonant cavity mirror, the birefringent filter, the thin-film polarizer, the first Q switch, the first laser module, the optical rotation crystal, the second laser module, the second Q switch, and the output coupling mirror are sequentially arranged along a laser optical path; A high-efficiency frequency doubling device is arranged on the laser light path output by the output coupling mirror; A high-efficiency quadruple frequency device, arranged on the laser light path output by the high-efficiency frequency doubling device; A laser homogenizing and shaping device is arranged on the laser light path output by the high-efficiency quadruple frequency device; The electric control device comprises a pump driving source and a Q switch driving source, wherein the pump driving source is electrically connected to the first laser module and the second laser module, and is used to control the pump sources inside the first laser module and the second laser module to perform pumping, so that the upper energy level particles of the gain medium inside the first laser module and the second laser module are continuously accumulated; the Q switch driving source is electrically connected to the first Q switch and the second Q switch, and is used to control the first Q switch and the second Q switch to open, so as to release photons according to the upper energy level particles accumulated in the first laser module and the second laser module, form a double-peak pulse, and output it through the output coupling mirror.

[0006] According to a high-power 330 nm laser generating device for photochemical reactions provided by the present invention, the optical axes of the resonant cavity mirror, the birefringent filter, the thin-film polarizer, the first Q switch, the first laser module, the optical rotation crystal, the second laser module, the second Q switch and the output coupling mirror are on the same straight line.

[0007] According to a high-power 330 nm laser generating device for photochemical reaction provided by the present invention, both the first laser module and the second laser module are side-pump laser modules, and the gain media of both the first laser module and the second laser module are Nd:YAG laser crystals.

[0008] According to a high-power 330 nm laser generating device for photochemical reaction provided by the present invention, the pumping time of the pump source is 200 μs, and the repetition rate of the pump source is 600 Hz; the first Q switch and the second Q switch are controlled simultaneously, the working repetition rate is 15 kHz, and the opening time is 5 μs.

[0009] According to a high-power 330 nm laser generating device for photochemical reactions provided by the present invention, the high-efficiency frequency doubling device includes a first total reflection mirror assembly, a first shaping lens, a second shaping lens, a double frequency crystal LBO and a first laser collecting barrel. The first total reflection mirror assembly is arranged on the laser light path output by the output coupling mirror, and is used to adjust the three-dimensional spatial position of the 1319 nm laser; the first shaping lens, the second shaping lens, the double frequency crystal LBO and the first laser collecting barrel are arranged in sequence on the laser light path output by the first total reflection mirror assembly.

[0010] According to a high-power 330 nm laser generating device for photochemical reactions provided by the present invention, the first total reflection mirror assembly includes a first total reflection mirror and a second total reflection mirror, the first total reflection mirror is arranged on the laser light path output by the output coupling mirror, and the second total reflection mirror is arranged on the laser light path output by the first total reflection mirror.

[0011] According to a high-power 330 nm laser generating device for photochemical reactions provided by the present invention, the high-efficiency quadruple frequency device includes a second total reflection mirror assembly, a third shaping lens, a fourth shaping lens, a quadruple frequency crystal LBO and a second laser collecting barrel, the second total reflection mirror assembly is arranged on the laser optical path output by the double frequency crystal LBO, and is used to adjust the three-dimensional spatial position of the 600 nm laser; the third shaping lens, the fourth shaping lens, the quadruple frequency crystal LBO and the second laser collecting barrel are arranged in sequence on the laser optical path output by the second total reflection mirror assembly.

[0012] According to a high-power 330 nm laser generating device for photochemical reaction provided by the present invention, the second total reflection mirror assembly includes a third total reflection mirror and a fourth total reflection mirror, the third total reflection mirror is arranged on the laser light path output by the doubled frequency crystal LBO, and the fourth total reflection mirror is arranged on the laser light path output by the third total reflection mirror; The high-efficiency frequency doubling device also includes a half-wave plate, which is arranged on the laser light path between the third total reflection mirror and the fourth total reflection mirror, and is used to adjust the polarization state of the 660 nm laser to achieve quadruple frequency doubling.

[0013] According to a high-power 330 nm laser generating device for photochemical reaction provided by the present invention, the laser homogenizing and shaping device comprises a third total reflection mirror assembly, a first microlens pair, a second microlens pair and a fifth shaping lens, the third total reflection mirror assembly is arranged on the laser light path output by the quadrupled frequency crystal LBO, and is used to adjust the three-dimensional spatial position of the 330 nm laser; the first microlens pair, the second microlens pair and the fifth shaping lens are sequentially arranged on the laser light path output by the third total reflection mirror assembly, and the first microlens pair and the second microlens pair are both used to shape the quadrupled frequency 330 nm laser to homogenize the light spot.

[0014] According to a high-power 330 nm laser generating device for photochemical reactions provided by the present invention, the third total reflection mirror assembly includes a fifth total reflection mirror and a sixth total reflection mirror, the fifth total reflection mirror is arranged on the laser light path between the quadruple frequency crystal LBO and the second laser collecting barrel, and the sixth total reflection mirror is arranged on the laser light path output by the fifth total reflection mirror.

[0015] The high-power 330 nm laser generating device for photochemical reaction provided by the present invention can output high-power (>10 W) and high-energy (>16 mJ) ultraviolet laser at a wavelength of 330 nanometers, significantly improving the efficiency and product selectivity of photochemical synthesis reactions; the generation of 1319 nm lasers of multiple pulse sequences is achieved by cooperating with the first Q switch and the second Q switch through the Q switch driving source, effectively improving the output power of the fundamental frequency source. In the quadruple frequency stage, by injecting the shaped large-size, low-power density 660 nm light spot into the dual LBO crystal for walk-off compensation, the common crystal damage problem in the ultraviolet band is avoided, and at the same time, efficient nonlinear frequency conversion in the ultraviolet band at low power density is achieved. The ultraviolet light spot is homogenized by the first microlens pair and the second microlens pair, and the ultraviolet light size is further adjusted by the fifth shaping lens, finally achieving high stability and low maintenance cost of the laser, making it an ideal choice for applications such as photochemical synthesis. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 It is a schematic structural diagram of a high-power 330 nm laser generating device for photochemical reaction provided by the present invention.

[0018] Figure 2 It is a schematic diagram of a control method of a first Q switch and a second Q switch provided by the present invention.

[0019] Figure 3 It is the output power curve of the base frequency source provided by the present invention under different electric control methods.

[0020] Figure 4 It is a schematic diagram of experimental results with and without walk-off compensation in the quadruple frequency stage provided by the present invention.

[0021] Figure 5 This is the measurement result of the ultraviolet laser line width provided by the present invention.

[0022] Figure 6 It is a comparison of the homogenization results of the light beam homogenization device provided by the present invention.

[0023] Reference numerals: 8. Pump driving source; 9. Q switch driving source; 10. High power fundamental frequency source; 11. First laser module; 12. Second laser module; 13. Resonant cavity mirror; 14. Output coupling mirror; 15. Optical rotation crystal; 16. First Q switch; 17. Second Q switch; 18. Birefringent filter; 19. Thin film polarizer; 20. High efficiency frequency doubling device; 21. First total reflection mirror; 22. Second total reflection mirror; 23. First shaping lens; 24. Second shaping lens; 25. Frequency doubling crystal LBO; 26, half-wave plate; 27, first laser collecting barrel; 30, high-efficiency frequency quadrupling device; 31, third total reflection mirror; 32, fourth total reflection mirror; 33, third shaping lens; 34, fourth shaping lens; 35, frequency quadrupling crystal LBO; 36, second laser collecting barrel; 40, laser homogenization shaping device; 41, fifth total reflection mirror; 42, sixth total reflection mirror; 43, first microlens pair; 44, second microlens pair; 45, fifth shaping lens. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limitations on the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0026] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0027] In the embodiments of the present invention, unless otherwise clearly specified and limited, the first feature being "above" or "below" the second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0028] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0029] like Figure 1 and Figure 2 As shown, the high-power 330 nm laser generating device for photochemical reaction comprises a high-power fundamental frequency source 10, a high-efficiency frequency doubling device 20, a high-efficiency frequency quadrupling device 30 and a laser homogenizing and shaping device 40. The high-power fundamental frequency source 10 is 1319 nm high-power fundamental frequency source, the high-power fundamental frequency source 10 comprises a first laser module 11, a second laser module 12, a resonant cavity mirror 13, an output coupling mirror 14, an optical rotation crystal 15, a first Q switch 16, a second Q switch 17, a birefringent filter 18 and a thin film polarizer 19, the resonant cavity mirror 13, the birefringent filter 18, the thin film polarizer 19, the first Q switch 16, the first laser module 11, the optical rotation crystal 15, the second laser module 12, the second Q switch 17 and the output coupling mirror 14 are arranged in sequence along the laser light path; the high-efficiency frequency doubling device 20 is arranged on the laser light path output by the output coupling mirror 14; the high-efficiency quadruple frequency doubling device 30 is arranged on the laser light path output by the high-efficiency frequency doubling device 20; the laser homogenization and shaping device 40 is arranged on the laser light path output by the high-efficiency quadruple frequency doubling device 30; The electric control device includes a pump driving source and a Q switch driving source. The pump driving source is electrically connected to the first laser module 11 and the second laser module 12, and is used to control the pump sources inside the first laser module 11 and the second laser module 12 to pump, so that the upper energy level particles of the gain medium inside the first laser module 11 and the second laser module 12 are continuously accumulated; the Q switch driving source is electrically connected to the first Q switch 16 and the second Q switch 17, and is used to control the first Q switch 16 and the second Q switch 17 to open, so as to release photons according to the upper energy level particles accumulated in the first laser module 11 and the second laser module 12, form a double-peak pulse and output it through the output coupling mirror 14.

[0030] The high-power 330 nm laser generating device for photochemical reaction provided by the present invention can output high-power (>10 W) and high-energy (>16 mJ) ultraviolet laser at a wavelength of 330 nanometers, significantly improving the efficiency and product selectivity of photochemical synthesis reactions; the Q switch driving source cooperates with the first Q switch 16 and the second Q switch 17 to realize the generation of multiple pulse sequences of 1319 nm lasers, effectively improving the output power of the fundamental frequency source. In the quadrupling stage, by injecting the shaped large-size, low-power density 660 nm light spot into the dual LBO crystal for walk-off compensation, the common crystal damage problem in the ultraviolet band is avoided, and at the same time, efficient nonlinear frequency conversion in the ultraviolet band at low power density is realized. The ultraviolet light spot is homogenized by the first microlens pair 43 and the second microlens pair 44, and the ultraviolet light size is further adjusted by the fifth shaping lens 45, finally achieving high stability and low maintenance cost of the laser, making it an ideal choice for applications such as photochemical synthesis.

[0031] In one embodiment of the present invention, the optical axes of the resonant cavity mirror 13, the birefringent filter 18, the thin-film polarizer 19, the first Q switch 16, the first laser module 11, the optical rotation crystal 15, the second laser module 12, the second Q switch 17 and the output coupling mirror 14 are in the same straight line, and the above-mentioned devices constitute a 1319 nm laser resonant cavity for outputting 1319 nm laser.

[0032] In one embodiment of the present invention, the laser module includes a pump source and a gain medium. The first laser module 11 and the second laser module 12 are both side-pump laser modules. The gain media of the first laser module 11 and the second laser module 12 are both Nd:YAG laser crystals.

[0033] In one embodiment of the present invention, the pumping time of the pump source is 200 μs, and the repetition rate of the pump source is 600 Hz; the first Q switch 16 and the second Q switch 17 are controlled simultaneously, and the working repetition rate is 15 kHz and the opening time is 5 μs. Figure 3As shown, the Q switch driving source cooperates with the first Q switch 16 and the second Q switch 17 to finally output a macro pulse with a repetition rate of 600 Hz, each macro pulse containing 2 micro pulses. Compared with the laser outputted by a single pulse using a conventional Q-switching method with a higher repetition rate, the laser generating device of the present invention can effectively improve the output power of the 1319 nm laser and reduce the potential deterioration of the beam quality caused by thermally induced wavefront distortion.

[0034] In one embodiment of the present invention, the high-efficiency frequency doubling device 20 includes a first total reflection mirror assembly, a first shaping lens 23, a second shaping lens 24, a double frequency crystal LBO 25 and a first laser collecting bucket 27. The first total reflection mirror assembly is arranged on the laser light path output by the output coupling mirror 14, and is used to adjust the three-dimensional spatial position of the 1319 nm laser; the first total reflection mirror assembly includes a first total reflection mirror 21 and a second total reflection mirror 22. The first total reflection mirror 21 is arranged on the laser light path output by the output coupling mirror 14, and the second total reflection mirror 22 is arranged on the laser light path output by the first total reflection mirror 21. The first total reflection mirror 21 and the second total reflection mirror 22 are both 1319 nm total reflection mirrors.

[0035] The first shaping lens 23, the second shaping lens 24, the double frequency crystal LBO 25 and the first laser collection barrel 27 are sequentially arranged on the laser light path output by the first total reflection mirror assembly. Specifically, the first shaping lens 23, the second shaping lens 24, the double frequency crystal LBO 25 and the first laser collection barrel 27 are sequentially arranged on the laser light path output by the second total reflection mirror 22. The double frequency crystal LBO 25 is used to generate 660 nm laser, and the first laser collection barrel 27 is a 660 nm laser collection barrel.

[0036] In the double frequency stage, the 1319 nm laser is reflected by the first total reflection mirror 21 and the second total reflection mirror 22, and then shaped by the first shaping lens 23 and the second shaping lens 24, and enters the double frequency crystal LBO, the size of the LBO crystal is 4 mm*4 mm*40 mm. The residual 1319 nm laser enters the first laser collection barrel 27. The half-wave plate 26 is used to further adjust the polarization state of the 660 nm laser to complete the next step of quadruple frequency.

[0037] In one embodiment of the present invention, the high-efficiency quadruple frequency device 30 is a 330 nm high-efficiency quadruple frequency device, and the high-efficiency quadruple frequency device 30 includes a second total reflection mirror assembly, a third shaping lens 33, a fourth shaping lens 34, a quadruple frequency crystal LBO 35, and a second laser collection barrel 36. The second total reflection mirror assembly is arranged on the laser light path output by the double frequency crystal LBO 25, and is used to adjust the three-dimensional spatial position of the 600 nm laser. The second total reflection mirror assembly includes a third total reflection mirror 31 and a fourth total reflection mirror 32. The third total reflection mirror 31 is arranged on the laser light path output by the double frequency crystal LBO 25, and the fourth total reflection mirror 32 is arranged on the laser light path output by the third total reflection mirror 31. The third total reflection mirror 31 is highly reflective @660 nm and highly transparent @1319 nm.

[0038] The LBO 35 quadrupled frequency crystal is cut into multiple small LBO crystals of equal length to compensate for the spatial walk-off effect when the 660 nm laser is quadrupled to generate a 330 nm laser. The LBO crystal is two 4 mm*4 mm*20 mm crystals, the two crystal axes are coaxially placed, and a pair of lenses with focal lengths of 100 mm and 150 mm are used in front of the LBO crystal to shape the 660 nm laser, ensuring that the laser is injected into the LBO crystal with a lower power density and collimated.

[0039] The high-efficiency frequency doubling device 20 further includes a half-wave plate 26, which is disposed on the laser light path between the third total reflection mirror 31 and the fourth total reflection mirror 32. The half-wave plate 26 is used to adjust the polarization state of the 660 nm laser to achieve frequency quadrupling.

[0040] The third shaping lens 33, the fourth shaping lens 34, the quadruple frequency crystal LBO35 and the second laser collecting barrel 36 are sequentially arranged on the laser light path output by the second total reflection mirror assembly. Specifically, the third shaping lens 33, the fourth shaping lens 34, the quadruple frequency crystal LBO35 and the second laser collecting barrel 36 are sequentially arranged on the laser light path output by the fourth total reflection mirror 32, and the second laser collecting barrel 36 is a 660 nm light collecting barrel.

[0041] In the frequency quadrupling stage, the 660 nm laser is then reflected by the third total reflection mirror 31 and the fourth total reflection mirror 32, and enters the third shaping lens 33 and the fourth shaping lens 34 for shaping. The shaped large-size and low-power-density 660 nm laser passes through the frequency quadrupling crystal LBO35 to generate a 330 nm ultraviolet laser, which is then reflected by the fifth total reflection mirror 41 and the sixth total reflection mirror 42, enters the first microlens pair 43 and the second microlens pair 44, and is finally shaped by the fifth shaping lens 45 and output.

[0042] like Figure 4As shown in the figure, after walk-off compensation, although the power density of the 660 nm laser is low, it still has a high efficiency, and the spot morphology of the 330 nm ultraviolet laser is also significantly improved.

[0043] In one embodiment of the present invention, the laser homogenization and shaping device 40 includes a third total reflection mirror assembly, a first microlens pair 43, a second microlens pair 44 and a fifth shaping lens 45. The third total reflection mirror assembly is arranged on the laser light path output by the quadruple frequency crystal LBO35, and is used to adjust the three-dimensional spatial position of the 330nm laser; specifically, the third total reflection mirror assembly includes a fifth total reflection mirror 41 and a sixth total reflection mirror 42. The fifth total reflection mirror 41 is arranged on the laser light path between the quadruple frequency crystal LBO35 and the second laser collecting bucket 36, and the sixth total reflection mirror 42 is arranged on the laser light path output by the fifth total reflection mirror 41. The fifth total reflection mirror 41 is highly reflective @330 nm and highly transparent @660 nm. The first microlens pair 43, the second microlens pair 44 and the fifth shaping lens 45 are sequentially arranged on the laser light path output by the third total reflection mirror assembly. Specifically, the first microlens pair 43, the second microlens pair 44 and the fifth shaping lens 45 are sequentially arranged on the laser light path output by the sixth total reflection mirror 42. The first microlens pair 43 and the second microlens pair 44 are both used to shape the quadrupled frequency 330 nm laser to homogenize the light spot.

[0044] like Figure 6 As shown, in the light spot homogenization stage, the ultraviolet laser is homogenized by the first microlens pair 43, the second microlens pair 44 and the fifth shaping lens 45. The first microlens pair 43, the second microlens pair 44 and the fifth shaping lens 45 are arranged horizontally in sequence to ensure the homogenization of the light beam in two directions, thereby obtaining a light beam with a nearly flat-top distribution.

[0045] The high-power 330 nm laser generating device for photochemical reaction provided by the present invention can generate high-power 1319 nm fundamental frequency laser; and convert the fundamental frequency laser into 660 nm laser through a double frequency process; and then further convert the 660 nm laser into a high-power 330 nm ultraviolet laser through a quadruple frequency process; finally, the 330 nm ultraviolet laser is homogenized by a homogenizing device to obtain a nearly flat-top distribution light beam, so as to improve the efficiency and product selectivity of the photochemical synthesis reaction.

[0046] like Figure 5 As shown, the laser generated by the laser generating device provided by the present invention has a good spectrum width. The laser generating device not only improves the efficiency of photochemical synthesis, but also reduces the maintenance cost, and has broad application prospects.

[0047] The operating method of the high-power 330 nm laser generating device for photochemical reaction provided by the present invention comprises: The pump source inside the first laser module 11 and the second laser module 12 is controlled by the pump driving source to pump, so that the upper energy level particles of the gain medium in the laser module are continuously accumulated; the first Q switch 16 and the second Q switch 17 are controlled to open by the Q switch driving source to release photons according to the upper energy level particles accumulated in the first laser module 11 and the second laser module 12, forming a double peak pulse and outputting it through the output coupling mirror 14, the pumping time of the pump source is 200μs, and the repetition rate of the pump source is 600Hz; the working repetition rate of the first Q switch 16 and the second Q switch 17 are both 15 kHz, and the opening time is 5μs. The Q switch driving source cooperates with the first Q switch 16 and the second Q switch 17 to finally output a macro pulse with a repetition rate of 600Hz, each macro pulse contains 2 micro pulses, which can effectively improve the output power of the 1319 nm laser.

[0048] The LBO35 quadrupled frequency crystal is cut into multiple small LBO crystals of equal length to compensate for the spatial walk-off effect when the 660 nm laser is quadrupled to generate a 330 nm laser. The LBO crystal is two 4 mm*4 mm*20 mm crystals, and a pair of lenses with focal lengths of 100 mm and 150 mm are used in front of the LBO crystal to shape the 660 nm laser, ensuring that the laser is injected into the LBO crystal with a lower power density and collimated.

[0049] Two pairs of microlenses are used to shape the quadrupled frequency 330 nm laser to homogenize the light spot; the first microlens pair 43 and the second microlens pair 44 each include two orthogonally arranged plane-cylindrical microlens arrays, each of which has a focal length of 5.4 mm, a spacing of 500 μm between microlenses on the array, and a size of 15 × 15 × 1 mm³. The two orthogonally arranged plane-cylindrical microlens arrays are used to optimize the propagation of the light beam in the horizontal X direction and in the vertical Y direction, respectively; the first microlens pair 43 and the second microlens pair 44 arrays are arranged horizontally in sequence to ensure the homogenization of the light beam in two directions, and the homogenized light spot is further shaped by the fifth shaping lens 45 to adjust the size of the homogenized light spot.

[0050] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-power 330 nm laser generating device for photochemical reaction, characterized in that: include: A high-power fundamental frequency source (10), comprising a first laser module (11), a second laser module (12), a resonant cavity mirror (13), an output coupling mirror (14), an optically active crystal (15), a first Q switch (16), a second Q switch (17), a birefringent filter (18) and a thin-film polarizer (19), wherein the resonant cavity mirror (13), the birefringent filter (18), the thin-film polarizer (19), the first Q switch (16), the first laser module (11), the optically active crystal (15), the second laser module (12), the second Q switch (17) and the output coupling mirror (14) are arranged in sequence along a laser light path; A high-efficiency frequency doubling device (20) is arranged on the laser light path output by the output coupling mirror (14); A high-efficiency frequency quadrupling device (30), arranged on a laser light path output by the high-efficiency frequency quadrupling device (20); A laser homogenizing and shaping device (40) is arranged on the laser light path output by the high-efficiency quadruple frequency device (30); The electric control device comprises a pump driving source and a Q switch driving source, wherein the pump driving source is electrically connected to the first laser module (11) and the second laser module (12), and the pump driving source is used to control the pump sources inside the first laser module (11) and the second laser module (12) to pump, so that the upper energy level particles of the gain medium inside the first laser module (11) and the second laser module (12) are continuously accumulated; the Q switch driving source is electrically connected to the first Q switch (16) and the second Q switch (17), and the Q switch driving source is used to control the first Q switch (16) and the second Q switch (17) to open, so as to release photons according to the upper energy level particles accumulated in the first laser module (11) and the second laser module (12), so as to form a double peak pulse and output it through the output coupling mirror (14).

2. The high-power 330 nm laser generating device for photochemical reaction according to claim 1, characterized in that: The optical axes of the resonant cavity mirror (13), the birefringent filter (18), the thin-film polarizer (19), the first Q switch (16), the first laser module (11), the optical rotation crystal (15), the second laser module (12), the second Q switch (17), and the output coupling mirror (14) are on the same straight line.

3. The high-power 330 nm laser generating device for photochemical reaction according to claim 2, characterized in that: The first laser module (11) and the second laser module (12) are both side-pump laser modules, and the gain media of the first laser module (11) and the second laser module (12) are both Nd:YAG laser crystals.

4. The high-power 330 nm laser generating device for photochemical reaction according to claim 1, characterized in that: The pumping time of the pump source is 200 μs, and the repetition rate of the pump source is 600 Hz; the first Q switch (16) and the second Q switch (17) are controlled simultaneously, the working repetition rate is 15 kHz, and the opening time is 5 μs.

5. The high-power 330 nm laser generating device for photochemical reaction according to any one of claims 1 to 4, characterized in that: The high-efficiency frequency doubling device (20) comprises a first total reflection mirror assembly, a first shaping lens (23), a second shaping lens (24), a frequency doubling crystal LBO (25) and a first laser collecting barrel (27); the first total reflection mirror assembly is arranged on the laser light path output by the output coupling mirror (14) and is used to adjust the three-dimensional spatial position of the 1319 nm laser; the first shaping lens (23), the second shaping lens (24), the frequency doubling crystal LBO (25) and the first laser collecting barrel (27) are arranged in sequence on the laser light path output by the first total reflection mirror assembly.

6. The high-power 330 nm laser generating device for photochemical reaction according to claim 5, characterized in that: The first total reflection mirror assembly comprises a first total reflection mirror (21) and a second total reflection mirror (22); the first total reflection mirror (21) is arranged on the laser light path output by the output coupling mirror (14); and the second total reflection mirror (22) is arranged on the laser light path output by the first total reflection mirror (21).

7. The high-power 330 nm laser generating device for photochemical reaction according to claim 6, characterized in that: The high-efficiency quadruple frequency device (30) comprises a second total reflection mirror assembly, a third shaping lens (33), a fourth shaping lens (34), a quadruple frequency crystal LBO (35) and a second laser collection barrel (36); the second total reflection mirror assembly is arranged on the laser light path output by the double frequency crystal LBO (25) and is used to adjust the three-dimensional spatial position of the 600 nm laser; the third shaping lens (33), the fourth shaping lens (34), the quadruple frequency crystal LBO (35) and the second laser collection barrel (36) are arranged in sequence on the laser light path output by the second total reflection mirror assembly.

8. The high-power 330 nm laser generating device for photochemical reaction according to claim 7, characterized in that: The second total reflection mirror assembly comprises a third total reflection mirror (31) and a fourth total reflection mirror (32); the third total reflection mirror (31) is highly reflective @660 nm and highly transparent @1319 nm; the third total reflection mirror (31) is arranged on the laser light path output by the doubled frequency crystal LBO (25); and the fourth total reflection mirror (32) is arranged on the laser light path output by the third total reflection mirror (31); The high-efficiency frequency doubling device (20) further comprises a half-wave plate (26), wherein the half-wave plate (26) is arranged on the laser light path between the third total reflection mirror (31) and the fourth total reflection mirror (32), and the half-wave plate (26) is used to adjust the polarization state of the 660 nm laser to achieve frequency quadrupling.

9. The high-power 330 nm laser generating device for photochemical reaction according to claim 8, characterized in that: The laser homogenizing and shaping device (40) comprises a third total reflection mirror assembly, a first microlens pair (43), a second microlens pair (44) and a fifth shaping lens (45); the third total reflection mirror assembly is arranged on the laser light path output by the quadrupled frequency crystal LBO (35) and is used to adjust the three-dimensional spatial position of the 330 nm laser; the first microlens pair (43), the second microlens pair (44) and the fifth shaping lens (45) are arranged in sequence on the laser light path output by the third total reflection mirror assembly; the first microlens pair (43) and the second microlens pair (44) are both used to shape the quadrupled frequency 330 nm laser to homogenize the light spot.

10. The high-power 330 nm laser generating device for photochemical reaction according to claim 9, characterized in that: The third total reflection mirror assembly comprises a fifth total reflection mirror (41) and a sixth total reflection mirror (42); the fifth total reflection mirror (41) is highly reflective @330 nm and highly transparent @660 nm; the fifth total reflection mirror (41) is arranged on the laser light path between the quadruple frequency crystal LBO (35) and the second laser collection barrel (36); and the sixth total reflection mirror (42) is arranged on the laser light path output by the fifth total reflection mirror (41).

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