Radio frequency lumped GaAs Balun filter chip for satellite communication phased array

Abstract

The invention discloses a radio frequency lumped GaAs Balun filter chip for a satellite communication phased array, which comprises a GaAs substrate and a lumped GaAs Balun filter chip arranged on the substrate, and is characterized in that a circuit comprises two dual-mode resonators, namely a first resonator and a second resonator, three matching capacitors, a coupling capacitor and two coupling inductors, the coupling lumped element is used for circuit connection, so that the insertion loss of the circuit can be reduced, and the stability of the phase difference amplitude of the two output ports in the balun filter circuit is greatly improved. The IPD multilayer fabrication process can effectively implement high integrated circuits. The provided filtering balun not only can realize a broadband filtering function, but also can eliminate phase reversal between output ports in a working passband, and the filtering balun chip realizes a quite small size in the aspect of miniaturization, and has good broadband filtering response and good in-band isolation performance at the same time.

Description

Technical Field

[0001] The present invention relates to the field of chip technology, and in particular to a radio frequency lumped GaAs balun filter chip for a satellite communication phased array. Background Art

[0002] In today's increasingly digital and globalized communication environment, satellite communications play a vital role in providing wide-area coverage and high-bandwidth transmission. Phased array technology, as an advanced communication system architecture, allows beam directionality and electronic scanning by adjusting the phase of each antenna in the antenna array, thereby improving the performance and adaptability of the communication system. However, satellite communication phased array systems require highly advanced RF components to meet the requirements of size, broadband and high performance. Against this background, the research on "a RF lumped GaAs balun filter chip for satellite communication phased array" came into being. GaAs materials have attracted much attention due to their excellent performance in the high frequency range, and the design of the "balun filter chip" means that the chip may use balun technology to convert balanced and unbalanced signals to better meet the requirements of the phased array system. This small-sized and broadband RF chip design is of great significance to satellite communication phased array systems. First, the smaller size helps to reduce the load of the satellite payload and improve the lightweight and compactness of the overall system. Second, the broadband characteristics enable it to support high-speed and high-capacity data transmission, adapting to the future communication network's demand for wider bandwidth.

[0003] IPD technology allows passive devices such as inductors, capacitors and resistors to be integrated on the chip to realize complex RF and microwave circuits, and due to its miniaturized manufacturing advantages, it is increasingly used in filter design. Filter balun chips based on IPD technology have significant advantages in the field of wireless communications, and provide advanced solutions for the design and manufacture of modern wireless communication equipment through high integration, optimized RF performance, multi-band support and cost-effectiveness. The application of this technology helps to promote innovation in the field of wireless communications and drive equipment to be more compact, efficient and reliable.

[0004] In addition, designers try to integrate the functions of multiple devices into one device to reduce the number of devices, and put forward the concept of functional fusion RF devices. At present, researchers have designed many baluns with filtering functions based on microstrip lines or coupled lines, but because microstrip lines and coupled lines are large in size in the 6GHz frequency band, it is not conducive to their use in the RF circuits of mobile terminals. The miniaturized balun chips designed using IPD technology can be widely used in mobile terminals, so the study of filtering baluns based on IPD has important significance and application value. Summary of the invention

[0005] Purpose of the invention: In order to solve the above problems, the present invention proposes a radio frequency lumped GaAs balun filter chip for satellite communication phased array. The proposed filter balun can achieve a relatively small size by utilizing integrated components and IPD manufacturing technology. It can not only realize the frequency selection function, but also eliminate the phase reversal between the output ports in the working passband.

[0006] Technical solution. In order to solve the above technical problems, the present invention proposes a wide RF lumped GaAs balun filter chip for satellite communication phased array. The chip comprises a GaAs substrate (19), a grounding metal layer (20), and a wide bandwidth RF lumped GaAs balun filter circuit located on the upper layer of the GaAs substrate (19), and the grounding metal layer (20) is located on the lower layer of the GaAs substrate (19); it also comprises an input port (1), a first output port (2), a second output port (3), and a balun filter resonant network located between the input port (1) and the two output ports; the input port (1) and the output port are both ground-signal-ground (GSG) structures, and are respectively arranged on the left side, right side and lower side of the GaAs substrate (19); the filter resonant network penetrates the GaAs substrate (19) through a grounding column (18) and is connected to the grounding metal layer (20).

[0007] Furthermore, the balun filter resonant network includes a first dual-mode resonator and a second dual-mode resonator; the first dual-mode resonator includes a first inductor (4), a second inductor (5), a first capacitor (6), and a second capacitor (7), wherein the first inductor (4), the second inductor (5) and the second capacitor (7) are arranged in a triangle, and the three angles formed are respectively called a first node, a second node and a third node; the connection point between the upper end of the first inductor (4) and the upper end of the second capacitor (7) is the first node, which is the input end of the first dual-mode resonator; the connection point between the lower end of the second inductor (5) and the lower end of the second capacitor (7) is the second node, which is the output end of the first dual-mode resonator; the connection point between the lower end of the first inductor (4) and the upper end of the second inductor (5) is the third node, which is connected to the grounding column (18) through the first capacitor (6);

[0008] The second dual-mode resonator comprises a third inductor (8), a fourth inductor (9), a third capacitor (10), and a fourth capacitor (11), wherein the third inductor (8), the fourth inductor (9) and the third capacitor (10) are arranged in a triangle, and the three angles formed are respectively called a fourth node, a fifth node and a sixth node. The connection point between the upper end of the third inductor (8) and the upper end of the third capacitor (10) is the fourth node, which is the input end of the second dual-mode resonator. The connection point between the lower end of the fourth inductor (9) and the lower end of the third capacitor (10) is the fifth node, which is the output end of the second dual-mode resonator. The connection point between the lower end of the third inductor (8) and the upper end of the fourth inductor (9) is the third node, which is connected to the grounding column (18) through the fourth capacitor (11).

[0009] Furthermore, the first dual-mode resonator and the second dual-mode resonator are connected via a coupling capacitor (15), a first coupling inductor (12), and a second coupling inductor (13); one end of the coupling capacitor (15) is connected to one end of the first coupling inductor (12) and the input end of the first dual-mode resonator; the other end of the coupling capacitor (15) is connected to the other end of the first coupling inductor (12) and the input end of the second dual-mode resonator; one end of the first coupling inductor (12) is connected to the input end of the first dual-mode resonator, and the other end of the first coupling inductor (12) is connected to the input end of the second dual-mode resonator; one end of the second coupling inductor (13) is connected to the output end of the first dual-mode resonator, and the other end of the second coupling inductor (13) is connected to the output end of the second dual-mode resonator.

[0010] Furthermore, the input port (1) is connected to one end of a first matching capacitor (14), and the other end of the first matching capacitor (14) is connected to the input end of the first dual-mode resonator; the first output port (2) is connected to one end of a second matching capacitor (16), and the other end of the second matching capacitor (16) is connected to the input end of the second dual-mode resonator; the second output port (3) is connected to one end of a third matching capacitor (17), and the other end of the third matching capacitor (17) is connected to the output end of the second dual-mode resonator.

[0011] Furthermore, all the inductor and capacitor elements are connected via microstrip connecting lines.

[0012] Beneficial effects: Compared with the prior art, the technical solution of the present invention has the following beneficial technical effects:

[0013] First, not only can the frequency selection function be realized, but also the phase difference between the output ports in the working passband can be eliminated. Secondly, the out-of-band transmission zero point is introduced, which provides better out-of-band suppression, improves selectivity, and greatly improves the stability of the phase difference between the first output port and the second output port in the balanced-unbalanced converter circuit. Finally, the IPD technology is adopted to achieve a fairly small size in miniaturization, with good broadband filtering response and good in-band isolation performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments, so as to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, and the advantages and implementation methods of the present invention will be more obvious. The contents of the accompanying drawings are only used to illustrate and explain the present invention, but will not constitute any limitation to the present invention in any sense. In the accompanying drawings:

[0015] Figure 1 The present invention provides a schematic structural diagram of a radio frequency lumped GaAs balun filter chip for a satellite communication phased array.

[0016] Figure 2 The invention discloses an equivalent circuit diagram of a radio frequency lumped GaAs balun filter chip for a satellite communication phased array.

[0017] Figure 3 The present invention provides a phase difference diagram between a first output port and a second output port of a radio frequency lumped GaAs balun filter chip for a satellite communication phased array.

[0018] Figure 4 The present invention provides a simulated scattering parameter curve diagram of a radio frequency lumped GaAs balun filter chip for a satellite communication phased array. DETAILED DESCRIPTION

[0019] The embodiments of the present invention will be described below in conjunction with the accompanying drawings. The implementation modes shown in the accompanying drawings are only exemplary and are intended to explain the principles of the present invention, but are not intended to limit the scope of the present invention.

[0020] like Figure 1As shown, the present invention provides a wide-band radio frequency lumped GaAs balun filter chip for satellite communication phased array, the chip comprising a GaAs substrate (19), a grounding metal layer (20), a wide-band radio frequency lumped GaAs balun filter circuit located on the upper layer of the GaAs substrate (19), the grounding metal layer (20) being located on the lower layer of the GaAs substrate (19); and also comprising an input port (1), a first output port (2), a second output port (3), and a balun filter resonant network located between the input port (1) and the two output ports; the input port (1) and the output port are both ground-signal-ground (GSG) structures, and are respectively arranged on the left side, right side and lower side of the GaAs substrate (19); the filter resonant network penetrates the GaAs substrate (19) through a grounding column (18) and is connected to the grounding metal layer (20).

[0021] Furthermore, the balun filter resonant network includes a first dual-mode resonator and a second dual-mode resonator; the first dual-mode resonator includes a first inductor (4), a second inductor (5), a first capacitor (6), and a second capacitor (7), wherein the first inductor (4), the second inductor (5) and the second capacitor (7) are arranged in a triangle, and the three angles formed are respectively called a first node, a second node and a third node; the connection point between the upper end of the first inductor (4) and the upper end of the second capacitor (7) is the first node, which is the input end of the first dual-mode resonator; the connection point between the lower end of the second inductor (5) and the lower end of the second capacitor (7) is the second node, which is the output end of the first dual-mode resonator; the connection point between the lower end of the first inductor (4) and the upper end of the second inductor (5) is the third node, which is connected to the grounding column (18) through the first capacitor (6);

[0022] The second dual-mode resonator comprises a third inductor (8), a fourth inductor (9), a third capacitor (10), and a fourth capacitor (11), wherein the third inductor (8), the fourth inductor (9) and the third capacitor (10) are arranged in a triangle, and the three angles formed are respectively called a fourth node, a fifth node and a sixth node. The connection point between the upper end of the third inductor (8) and the upper end of the third capacitor (10) is the fourth node, which is the input end of the second dual-mode resonator. The connection point between the lower end of the fourth inductor (9) and the lower end of the third capacitor (10) is the fifth node, which is the output end of the second dual-mode resonator. The connection point between the lower end of the third inductor (8) and the upper end of the fourth inductor (9) is the third node, which is connected to the grounding column (18) through the fourth capacitor (11).

[0023] Furthermore, the first dual-mode resonator and the second dual-mode resonator are connected via a coupling capacitor (15), a first coupling inductor (12), and a second coupling inductor (13); one end of the coupling capacitor (15) is connected to one end of the first coupling inductor (12) and the input end of the first dual-mode resonator; the other end of the coupling capacitor (15) is connected to the other end of the first coupling inductor (12) and the input end of the second dual-mode resonator; one end of the first coupling inductor (12) is connected to the input end of the first dual-mode resonator, and the other end of the first coupling inductor (12) is connected to the input end of the second dual-mode resonator; one end of the second coupling inductor (13) is connected to the output end of the first dual-mode resonator, and the other end of the second coupling inductor (13) is connected to the output end of the second dual-mode resonator.

[0024] Furthermore, the input port (1) is connected to one end of a first matching capacitor (14), and the other end of the first matching capacitor (14) is connected to the input end of the first dual-mode resonator; the first output port (2) is connected to one end of a second matching capacitor (16), and the other end of the second matching capacitor (16) is connected to the input end of the second dual-mode resonator; the second output port (3) is connected to one end of a third matching capacitor (17), and the other end of the third matching capacitor (17) is connected to the output end of the second dual-mode resonator.

[0025] Furthermore, all the inductor and capacitor elements are connected via microstrip connecting lines.

[0026] The capacitor in the embodiment of the present invention is a MIM capacitor, which is composed of a top metal layer and a bottom metal layer and a silicon nitride isolation layer therebetween. Figure 2 is an equivalent circuit diagram of the present invention. The capacitor in the embodiment of the present invention comprises Figure 2 The capacitors C1-C5 shown are all MIM flat plate capacitors, and the specific parameter settings of each capacitor are shown in Table 1.

[0027] Table 1

[0028] capacitance <![CDATA[C1]]> <![CDATA[C2]]> <![CDATA[C3]]> <![CDATA[C4]]> <![CDATA[C5]]> Parameter value (pF) 0.6 0.2 0.5 3.7 0.7

[0029] The spiral inductor in the embodiment of the present invention is formed by a multi-turn transmission line wound in a spiral manner, and the coupling function is achieved by mutually spirally winding two spiral inductors. Figure 2 is an equivalent circuit diagram of the present invention. The inductor in the embodiment of the present invention includes Figure 2 The inductors shown are all composed of three layers of spirally wound metal transmission lines, and the specific parameter settings of each inductor are shown in Table 2.

[0030] Table 2

[0031] inductance <![CDATA[L1]]> <![CDATA[L2]]> <![CDATA[L3]]> Parameter value (nH) 2.25 10 15

[0032] The simulation results are as follows Figure 4 As shown in FIG. 1 , the actual processing test results of the present invention are that the center frequency is 2.5 GHz, the measured 3dB fractional bandwidth is 40.8%, and the range is 1.77 GHz to 2.71 GHz. In the passband, the measured return loss (|S11|) is better than 20 dB, and the minimum insertion loss (|S21| and |S31|) is 4.04 dB. The in-band phase difference between the first output port and the second output port is as follows: Figure 3 shown.

[0033] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, chip, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, chip, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the presence of other identical elements in the process, chip, article or device including the elements. Each embodiment in this specification is described in a related manner, and the same and similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. For related parts, please refer to the partial description of the chip embodiment.

[0034] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A wide RF lumped GaAs balun filter chip for satellite communication phased array, characterized in that: The chip comprises a GaAs substrate (19), a grounding metal layer (20), a broadband radio frequency lumped GaAs balun filter circuit located on the upper layer of the GaAs substrate (19), and the grounding metal layer (20) is located on the lower layer of the GaAs substrate (19); it also comprises an input port (1), a first output port (2), a second output port (3), and a balun filter resonant network located between the input port (1) and the two output ports; the input port (1) and the output port are both ground-signal-ground (GSG) structures, and are respectively arranged on the left side, right side and lower side of the GaAs substrate (19); the filter resonant network penetrates the GaAs substrate (19) through a grounding column (18) and is connected to the grounding metal layer (20).

2. The wide RF lumped GaAs balun filter chip for satellite communication phased array according to claim 1, characterized in that: The balun filter resonant network comprises a first dual-mode resonator and a second dual-mode resonator; the first dual-mode resonator comprises a first inductor (4), a second inductor (5), a first capacitor (6), and a second capacitor (7), wherein the first inductor (4), the second inductor (5) and the second capacitor (7) are arranged in a triangle, and the three angles formed are respectively called a first node, a second node and a third node; the connection point between the upper end of the first inductor (4) and the upper end of the second capacitor (7) is the first node, which is the input end of the first dual-mode resonator; the connection point between the lower end of the second inductor (5) and the lower end of the second capacitor (7) is the second node, which is the output end of the first dual-mode resonator; the connection point between the lower end of the first inductor (4) and the upper end of the second inductor (5) is the third node, which is connected to the grounding column (18) through the first capacitor (6); The second dual-mode resonator comprises a third inductor (8), a fourth inductor (9), a third capacitor (10), and a fourth capacitor (11), wherein the third inductor (8), the fourth inductor (9) and the third capacitor (10) are arranged in a triangle, and the three angles formed are respectively called a fourth node, a fifth node and a sixth node. The connection point between the upper end of the third inductor (8) and the upper end of the third capacitor (10) is the fourth node, which is the input end of the second dual-mode resonator. The connection point between the lower end of the fourth inductor (9) and the lower end of the third capacitor (10) is the fifth node, which is the output end of the second dual-mode resonator. The connection point between the lower end of the third inductor (8) and the upper end of the fourth inductor (9) is the third node, which is connected to the grounding column (18) through the fourth capacitor (11).

3. The wide RF lumped GaAs balun filter chip for satellite communication phased array according to claim 2, characterized in that: The first dual-mode resonator and the second dual-mode resonator are connected via a coupling capacitor (15), a first coupling inductor (12), and a second coupling inductor (13), and one end of the coupling capacitor (15) is connected to one end of the first coupling inductor (12) and an input end of the first dual-mode resonator; The other end of the coupling capacitor (15) is connected to the other end of the first coupling inductor (12) and the input end of the second dual-mode resonator; One end of the first coupling inductor (12) is connected to the input end of the first dual-mode resonator, and the other end of the first coupling inductor (12) is connected to the input end of the second dual-mode resonator; One end of the second coupling inductor (13) is connected to the output end of the first dual-mode resonator, and the other end of the second coupling inductor (13) is connected to the output end of the second dual-mode resonator.

4. The wide RF lumped GaAs balun filter chip for satellite communication phased array according to claim 3, characterized in that: The input port (1) is connected to one end of a first matching capacitor (14), and the other end of the first matching capacitor (14) is connected to the input end of a first dual-mode resonator; the first output port (2) is connected to one end of a second matching capacitor (16), and the other end of the second matching capacitor (16) is connected to the input end of a second dual-mode resonator; the second output port (3) is connected to one end of a third matching capacitor (17), and the other end of the third matching capacitor (17) is connected to the output end of the second dual-mode resonator.

5. The wide RF lumped GaAs balun filter chip for satellite communication phased array according to claim 1, characterized in that: All inductor and capacitor components are connected through microstrip lines.

Images