Electronic device and manufacturing method thereof

Abstract

The invention provides an electronic device and a manufacturing method thereof. The electronic device comprises a driving substrate, a connecting layer, a plurality of light-emitting elements and a buffer structure. The connecting layer is arranged on the driving substrate. The plurality of light-emitting elements are electrically connected to the driving substrate through the connecting layer. The buffer structure is disposed on the plurality of light-emitting elements and includes a plurality of openings. The plurality of openings overlap the plurality of light-emitting elements. The buffer structure has a first surface adjacent to the plurality of light-emitting elements and a second surface away from the plurality of light-emitting elements, and the roughness of the second surface is greater than that of the first surface. According to the electronic device and the manufacturing method thereof, the probability of light mixing among pixels with different colors can be reduced, or light can be collected to improve the light efficiency.

Description

Technical Field

[0001] The present disclosure relates to an electronic device and a manufacturing method thereof, and more particularly to an electronic device and a manufacturing method thereof that can reduce the probability of light mixing between pixels of different colors or can collect light to improve light efficiency. Background Art

[0002] Electronic devices or spliced ​​electronic devices have been widely used in different fields such as communication, display, automobile or aviation. With the rapid development of electronic devices, electronic devices are developing towards being lighter and thinner, so the reliability or quality requirements of electronic devices are higher. Summary of the invention

[0003] The present disclosure provides an electronic device and a manufacturing method thereof, which can reduce the probability of light mixing between pixels of different colors or can collect light to improve light efficiency.

[0004] According to an embodiment of the present disclosure, an electronic device includes a driving substrate, a connecting layer, a plurality of light-emitting elements, and a buffer structure. The connecting layer is disposed on the driving substrate. The plurality of light-emitting elements are electrically connected to the driving substrate through the connecting layer. The buffer structure is disposed on the plurality of light-emitting elements and includes a plurality of openings. The plurality of openings overlap the plurality of light-emitting elements. The buffer structure has a first surface adjacent to the plurality of light-emitting elements and a second surface away from the plurality of light-emitting elements, and the roughness of the second surface is greater than the roughness of the first surface.

[0005] According to an embodiment of the present disclosure, a method for manufacturing an electronic device includes the following steps: providing a base layer; forming a buffer layer on the base layer; forming a light-emitting element layer on the buffer layer; patterning the light-emitting element layer to form a plurality of light-emitting elements; forming a connection layer on the plurality of light-emitting elements; bonding the connection layer to a driving substrate; applying a laser to the buffer layer to separate the base layer and the plurality of light-emitting elements from each other; and removing a portion of the buffer layer remaining on the plurality of light-emitting elements to form a buffer structure. The buffer structure includes a plurality of openings, and the plurality of openings expose the plurality of light-emitting elements. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The accompanying drawings are included to provide a further understanding of the present disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure.

[0007] Figures 1 to 6 is a cross-sectional schematic diagram of a method for manufacturing an electronic device according to a first embodiment of the present disclosure;

[0008] Figure 7 A cross-sectional schematic diagram of an electronic device according to a second embodiment of the present disclosure;

[0009] Figure 8A cross-sectional schematic diagram of an electronic device according to a third embodiment of the present disclosure;

[0010] Fig. 9 A cross-sectional schematic diagram of an electronic device according to a fourth embodiment of the present disclosure;

[0011] Fig.10 A cross-sectional schematic diagram of an electronic device according to a fifth embodiment of the present disclosure;

[0012] Fig.11 It is a cross-sectional schematic diagram of an electronic device according to a sixth embodiment of the present disclosure.

[0013] Description of Figure Numbers

[0014] 100, 100a, 100b, 100c, 100d: electronic devices;

[0015] 110: basal layer;

[0016] 120, 120a: buffer layer;

[0017] 120b: Buffer structure;

[0018] 121: first surface;

[0019] 122: second surface;

[0020] 130, 130b: light emitting element;

[0021] 131, 131b: first semiconductor layer;

[0022] 132: luminescent layer;

[0023] 133: second semiconductor layer;

[0024] 134: groove;

[0025] 140, 140e: molding material layer;

[0026] 150, 150d: connection layer;

[0027] 151: first conductive layer;

[0028] 1511: first pad;

[0029] 1512: second pad;

[0030] 152: second conductive layer;

[0031] 153: third conductive layer;

[0032] 160, 160c: driving substrate;

[0033] 161: base;

[0034] 162, 162c: circuit layer;

[0035] 163: pad;

[0036] 170, 170b: transparent conductive layer;

[0037] 180, 180b: optical module;

[0038] 181: Substrate;

[0039] 182: color filter layer;

[0040] 1821: filter unit;

[0041] 1822: black matrix layer;

[0042] 183, 183b, 185: insulation layer;

[0043] 184, 184b: light conversion layer;

[0044] 1841: light conversion unit;

[0045] 1842: Separation layer;

[0046] 190, 190d, 190e: light sensing elements;

[0047] 192: a first transparent material layer;

[0048] 194: a second transparent material layer;

[0049] 196: a third transparent material layer;

[0050] AD1: base glue;

[0051] AD2: adhesive layer;

[0052] E1: first electrode;

[0053] E2: second electrode;

[0054] ES: light emitting element layer;

[0055] FL: luminescent material layer;

[0056] G1: gap;

[0057] IL1: first insulation layer;

[0058] IL2: second insulation layer;

[0059] L: optical signal;

[0060] O1, O2: Open mouth;

[0061] RL: reflective layer;

[0062] SB: solder ball;

[0063] SE1: first semiconductor material layer;

[0064] SE2: second semiconductor material layer;

[0065] V1: first via;

[0066] V2: second via hole;

[0067] Z: Direction. DETAILED DESCRIPTION

[0068] The present disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to make it easier for readers to understand and for the simplicity of the drawings, the multiple drawings in the present disclosure only depict a portion of the electronic device, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the figure are only for illustration and are not intended to limit the scope of the present disclosure.

[0069] In the following description and claims, the words “including” and “comprising” are open-ended words, and thus should be interpreted as meaning “including but not limited to…”.

[0070] It should be understood that when an element or a film layer is referred to as being "on" or "connected to" another element or film layer, it may be directly on or directly connected to the other element or layer, or there may be an intervening element or film layer between the two (indirect case). Conversely, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two.

[0071] Although the terms "first", "second", "third" ... can be used to describe a variety of components, the components are not limited to these terms. These terms are only used to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but may be replaced by first, second, third ... according to the order of the components declared in the claims. Therefore, in the following description, the first component may be the second component in the claims.

[0072] In the text, the terms "about", "approximately", "substantially", and "roughly" generally mean within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5% of a given value or range. The numbers given here are approximate numbers, that is, in the absence of specific descriptions of "about", "approximately", "substantially", and "roughly", the meanings of "about", "approximately", "substantially", and "roughly" can still be implied.

[0073] In some embodiments of the present disclosure, terms such as "connection" and "interconnection" may refer to two structures being in direct contact, or two structures not being in direct contact, with other structures disposed between the two structures, unless otherwise specified. Such terms may also include situations where both structures are movable or both structures are fixed. In addition, the term "coupling" includes any direct and indirect electrical connection means.

[0074] In some embodiments of the present disclosure, an optical microscope (OM), a scanning electron microscope (SEM), an α-step, an ellipsometer, or other suitable methods may be used to measure the area, width, thickness, or height of each element, or the distance or spacing between elements. Specifically, according to some embodiments, a scanning electron microscope may be used to obtain a cross-sectional structural image including the element to be measured, and the area, width, thickness, or height of each element, or the distance or spacing between elements may be measured.

[0075] In the present disclosure, the electronic device may include a display device, a light-emitting device, a backlight device, a virtual reality device, an augmented reality (AR) device, an antenna device, a sensing device, a splicing device or any combination thereof, but not limited thereto. The display device may be a non-self-luminous display or a self-luminous display according to requirements, and may be a color display or a monochrome display according to requirements. The antenna device may be a liquid crystal antenna device or a non-liquid crystal antenna device, the sensing device may be a sensing device for sensing capacitance, light, heat or ultrasound, and the splicing device may be a display splicing device or an antenna splicing device, but not limited thereto. The electronic components in the electronic device may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light emitting diode (LED) or a photodiode. The light emitting diode may include, for example, an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED or a quantum dot light emitting diode (quantum dot LED), but not limited thereto. The transistor may include, for example, a top gate thin film transistor, a bottom gate thin film transistor or a dual gate thin film transistor, but is not limited thereto. The electronic device may also include a fluorescence material, a phosphor material, a quantum dot (QD) material or other suitable material according to requirements, but is not limited thereto. The electronic device may have a driving system, a control system, a light source system, ... and other peripheral systems to support a display device, an antenna device, a wearable device (for example, including an augmented reality or virtual reality device), a vehicle-mounted device (for example, including a car windshield) or a splicing device. It should be noted that the electronic device may be any combination of the foregoing, but is not limited thereto. The following will take an electronic device as an example to illustrate the contents of the present disclosure, but the present disclosure is not limited thereto.

[0076] It should be noted that the following embodiments may replace, reorganize, or mix features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. Features between embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

[0077] Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0078] Figures 1 to 6It is a cross-sectional schematic diagram of a manufacturing method of an electronic device according to a first embodiment of the present disclosure.

[0079] The manufacturing method of the electronic device 100 of this embodiment may include the following steps:

[0080] First, please refer to Figure 1 , providing a base layer 110, forming a buffer layer 120 on the base layer 110, forming a light emitting element layer ES on the buffer layer 120, and forming a reflective layer RL on the light emitting element layer ES. In the present embodiment, the material of the base layer 110 may be a recycled silicon wafer, but is not limited thereto. The buffer layer 120 may be used to help the light emitting element layer ES to be formed on the base layer 110. The buffer layer 120 may be a multilayer structure, and the material of the buffer layer 120 may include aluminum nitride (AlN), aluminum gallium nitride (AlGaN), and gallium nitride (GaN), but is not limited thereto. The light emitting element layer ES may include a first semiconductor material layer SE1, a light emitting material layer FL, and a second semiconductor material layer SE2. The first semiconductor material layer SE1 is disposed between the light emitting material layer FL and the buffer layer 120, the light emitting material layer FL is disposed between the second semiconductor material layer SE2 and the first semiconductor material layer SE1, and the second semiconductor material layer SE2 is disposed between the reflective layer RL and the light emitting material layer FL. The material of the first semiconductor material layer SE1 may be an N-type semiconductor material (e.g., N-type gallium nitride), and the material of the second semiconductor material layer SE2 may be a P-type semiconductor material (e.g., P-type gallium nitride), but is not limited thereto. In some embodiments, the material of the first semiconductor material layer may also be a P-type semiconductor material, and the material of the second semiconductor material layer may also be an N-type semiconductor material. In this embodiment, the material of the reflective layer RL may include aluminum or silver, but is not limited thereto. The reflective layer RL may be used to reflect the light emitted by the light emitting element 130 to improve the light emitting efficiency.

[0081] Please continue to refer to Figure 1 , patterning the reflective layer RL and the light emitting element layer ES to form a plurality of light emitting elements 130. Specifically, in the present embodiment, the reflective layer RL, the first semiconductor material layer SE1, the light emitting material layer FL and the second semiconductor material layer SE2 may be etched using, for example, a platform process (MESA) to expose a portion of the buffer layer 120 and form a plurality of light emitting elements 130. The plurality of light emitting elements 130 may include a first semiconductor layer 131, a light emitting layer 132 and a second semiconductor layer 133. The plurality of light emitting elements 130 are separated from each other, and a gap G1 is provided between two adjacent light emitting elements 130. In the present embodiment, the plurality of light emitting elements 130 may emit light of the same color, and the plurality of light emitting elements 130 may be, for example, a vertical chip type, but is not limited thereto.

[0082] Please continue to refer to Figure 1 After patterning the reflective layer RL and the light-emitting element layer ES to form a plurality of light-emitting elements 130, a second electrode E2 is formed on the patterned reflective layer RL, and a molding compound layer 140 is used to cover the plurality of light-emitting elements 130, the reflective layer RL, and the second electrode E2. In the present embodiment, the second electrode E2 may be electrically connected to the second semiconductor layer 133 of the light-emitting element 130 through the reflective layer RL. The molding compound layer 140 may be filled in the gap G1, and the molding compound layer 140 may expose the surface of the second electrode E2 facing away from the light-emitting element 130. The material of the molding compound layer 140 may include epoxy, polydimethylsiloxane (PDMS), other suitable materials, or a combination of the above materials.

[0083] Then, please refer to Figure 2 , forming a connection layer 150 on the plurality of light-emitting elements 130 and the molding material layer 140. In the present embodiment, the connection layer 150 may be a redistribution layer (RDL) or a redistribution structure, but is not limited thereto. The redistribution layer (or redistribution structure) may include at least one insulating layer and at least one conductor layer, and the redistribution layer (or redistribution structure) may enable the circuits of the electronic device 100 to be redistributed and / or further increase the circuit fan-out area; or, different electronic components may be electrically connected to each other through the redistribution layer (or redistribution structure); or, the redistribution layer (or redistribution structure) may be used to redistribute the size of the contact pads for the circuit fan-out or fan-in of the chip.

[0084] Specifically, the connection layer 150 may include multiple conductive layers (i.e., a first conductive layer 151, a second conductive layer 152, and a third conductive layer 153), multiple insulating layers (i.e., a first insulating layer IL1 and a second insulating layer IL2), and a plurality of vias (i.e., a first via V1 and a second via V2). The first conductive layer 151 is disposed on the molding material layer 140. The first conductive layer 151 includes a first pad 1511 and a second pad 1512, the second pad 1512 contacts the second electrode E2, and the first pad 1511 does not contact the second electrode E2. The first insulating layer IL1 is disposed on the first conductive layer 151, and the first insulating layer IL1 may cover a portion of the molding material layer 140. The second conductive layer 152 is disposed on the first insulating layer IL1. The second insulating layer IL2 is disposed on the second conductive layer 152, and the second insulating layer IL2 may cover a portion of the first insulating layer IL1. The third conductive layer 153 is disposed on the second insulating layer IL2. The first conductive via V1 penetrates the first insulating layer IL1, and the first conductive via V1 can connect the second conductive layer 152 and the first conductive layer 151. The second conductive via V2 penetrates the second insulating layer IL2, and the second conductive via V2 can connect the third conductive layer 153 and the second conductive layer 152. The first insulating layer IL1 and the second insulating layer IL2 can be stacked on the molding material layer 140 in sequence along the direction Z (for example, the normal direction of the base layer 110 or the normal direction of the electronic device 100). In this embodiment, the materials of the first conductive layer 151, the second conductive layer 152, and the third conductive layer 153 may include metal materials, transparent conductive materials, other suitable conductive materials, or a combination thereof, but are not limited thereto. The first insulating layer IL1 and the second insulating layer IL2 may be a single-layer structure or a multi-layer structure, and the materials of the first insulating layer IL1 and the second insulating layer IL2 may include polyimide (PI), glass, epoxy resin, silane coupling, photosensitive material, build-up layer material, or a combination thereof, but are not limited thereto.

[0085] Please continue to refer to Figure 2, provide a driving substrate 160, bond the connecting layer 150 to the driving substrate 160, and form an underfill AD1 between the driving substrate 160 and the connecting layer 150. In the present embodiment, the driving substrate 160 includes a base 161, a circuit layer 162, and a pad 163. The circuit layer 162 is disposed on the base 161. The circuit layer 162 may include driving circuits such as transistors and metal wirings not shown, and the circuit layer 162 may drive the light-emitting element 130 to emit light. The pad 163 is disposed on the circuit layer 162, and the pad 163 may be electrically connected to the circuit layer 162. The pad 163 of the driving substrate 160 may be bonded and electrically connected to the third conductive layer 153 of the connecting layer 150 by a solder ball SB, but is not limited thereto. In some embodiments not shown, it is also possible that no additional solder balls are provided, and instead, a metal-to-metal bonding method is used so that the pad of the driving substrate can be directly bonded to the third conductive layer of the connecting layer. In the present embodiment, the material of the solder ball SB may include metal, such as tin, tin-silver, tin-silver-bismuth, tin-gold, tin-nickel-gold, nickel-gold, other suitable materials or a combination of the above materials. The material of the base glue AD1 may include acrylic, epoxy resin, resin, photoresist material, other suitable materials or a combination of the above materials. The material of the substrate 161 may be a silicon wafer, but is not limited thereto. The driving substrate 160 may be a complementary metal-oxide-semiconductor (CMOS) substrate or a thin film transistor substrate, but is not limited thereto.

[0086] Then, please refer to Figure 3 After turning the substrate 110 upside down, laser is applied to the buffer layer 120 to separate the base layer 110 and the plurality of light emitting elements 130 from each other, and a buffer layer 120a having a rough surface is formed on the light emitting elements 130. In this embodiment, the removed base layer 110 can be recycled.

[0087] Please continue to refer to Figure 3 , an opening O1 is formed in the molding material layer 140 to expose a portion of the connection layer 150. In the present embodiment, an opening O1 penetrating the buffer layer 120a and the molding material layer 140 is formed at a position between two adjacent light emitting elements 130 by, for example, laser drilling. The opening O1 can expose a portion of the first pad 1511 of the first conductive layer 151 of the connection layer 150.

[0088] Then, please refer to Figure 4 , a conductive material is filled into the opening O1 to form a first electrode E1.

[0089] Please continue to refer to Figure 4, a portion of the buffer layer 120a remaining on the plurality of light emitting elements 130 is removed to form a buffer structure 120b (i.e., another portion of the buffer layer 120a that is not removed). In the present embodiment, the buffer structure 120b includes a plurality of openings O2, and the plurality of openings O2 can expose the first semiconductor layer 131 of the plurality of light emitting elements 130. The buffer structure 120b has a first surface 121 and a second surface 122 that are opposite to each other. The second surface 122 is farther away from the plurality of light emitting elements 130 than the first surface 121, and the second surface 122 can be a rough surface.

[0090] In the present embodiment, the rough surface of the buffer structure 120b (i.e., the second surface 122) can be used to disperse the light irradiated by the light-emitting element 130 and passing through the buffer structure 120b, so as to reduce the influence of the light on the light emitted by other light-emitting elements adjacent to the light-emitting element 130; with this design, the probability of light mixing between two adjacent light-emitting elements 130 can be reduced, the probability of light mixing between pixels of different colors can be reduced, or light efficiency can be improved by collecting light.

[0091] Then, please refer to Figure 5 , a transparent conductive layer 170 is formed on the buffer structure 120b and in the plurality of openings O2, so that the transparent conductive layer 170 can contact the conductive material of the first electrode E1 and the first semiconductor layer 131 of the light emitting element 130. Thus, the first electrode E1 can be electrically connected to the first semiconductor layer 131 of the light emitting element 130 through the transparent conductive layer 170. In the present embodiment, the material of the transparent conductive layer 170 may include transparent conductive oxides (TCO), such as indium tin oxide (ITO), indium zinc oxide (IZO) or indium gallium oxide (IGO) or a combination thereof, but is not limited thereto.

[0092] Please continue to refer to Figure 5 , forming an adhesive layer AD2 on the transparent conductive layer 170, and attaching the optical module 180 to the side of the plurality of light emitting elements 130 away from the driving substrate 160 through the adhesive layer AD2. In the present embodiment, the material of the adhesive layer AD2 may include optically clear adhesive (OCA) or optical clear resin (OCR), but is not limited thereto. The optical module 180 may include a substrate 181, a color filter layer 182, an insulating layer 183, a light conversion layer 184, and an insulating layer 185. The color filter layer 182 is disposed under the substrate 181, and the color filter layer 182 is disposed between the substrate 181 and the light conversion layer 184. The insulating layer 183 is disposed under the color filter layer 182. The light conversion layer 184 is disposed under the insulating layer 183. The insulating layer 185 is disposed under the light conversion layer 184.

[0093] In this embodiment, the color filter layer 182 includes a filter unit 1821 and a black matrix layer 1822. In a direction Z (e.g., a normal direction of the driving substrate 160 or a normal direction of the electronic device 100), the filter unit 1821 overlaps and corresponds to the light emitting element 130, and the black matrix layer 1822 overlaps and corresponds to the buffer structure 120b.

[0094] In the present embodiment, the light conversion layer 184 includes a light conversion unit 1841 and a separation layer 1842. In the direction Z, the light conversion unit 1841 overlaps and corresponds to the light emitting element 130 and the filter unit 1821, and the separation layer 1842 overlaps and corresponds to the buffer structure 120b and the black matrix layer 1822. In the present embodiment, the separation layer 1842 may include a colored photoresist, such as a white photoresist or a black photoresist, but is not limited thereto.

[0095] Then, please refer to Figure 6 The electronic device 100 of the present embodiment may include a driving substrate 160 , a connection layer 150 , a plurality of light emitting elements 130 , a buffer structure 120 b , a transparent conductive layer 170 , an adhesive layer AD2 , and an optical module 180 .

[0096] Specifically, the connection layer 150 is disposed on the driving substrate 160, and the connection layer 150 is disposed between the plurality of light emitting elements 130 and the driving substrate 160. The connection layer 150 can be electrically connected to the driving substrate 160 through the solder balls SB. In this embodiment, by disposing the connection layer 150, the plurality of light emitting elements 130 of the electronic device 100 can be integrated onto the driving substrate 160.

[0097] The plurality of light emitting elements 130 are disposed on the connection layer 150 , and the plurality of light emitting elements 130 may be electrically connected to the driving substrate 160 through the connection layer 150 .

[0098] The buffer structure 120b is disposed on the plurality of light emitting elements 130 and between the light conversion layer 184 of the optical module 180 and the plurality of light emitting elements 130. The buffer structure 120b includes a plurality of openings O2, and the plurality of openings O2 may overlap in the direction Z and correspond to the plurality of light emitting elements 130.

[0099] The buffer structure 120b has a first surface 121 adjacent to the plurality of light-emitting elements 130 and a second surface 122 away from the plurality of light-emitting elements 130. The roughness of the second surface 122 of the buffer structure 120b may be greater than the roughness of the first surface 121, so that the buffer structure 120b can be used to disperse the light irradiated by the light-emitting element 130 and passing through the buffer structure 120b, so as to reduce the influence of the light on the light emitted by other light-emitting elements adjacent to the light-emitting element 130, thereby reducing the probability of light mixing between two adjacent light-emitting elements 130, reducing the probability of light mixing between pixels of different colors, or collecting light to improve light efficiency.

[0100] The transparent conductive layer 170 is disposed on the buffer structure 120 b , and the transparent conductive layer 170 can be electrically connected to the plurality of light emitting elements 130 through the plurality of openings O2 .

[0101] The adhesive layer AD2 is disposed on the transparent conductive layer 170 , and the adhesive layer AD2 is disposed between the optical module 180 and the buffer structure 120 b .

[0102] The optical module 180 is disposed on the buffer structure 120b and the adhesive layer AD2. The optical module 180 includes a light conversion layer 184 and a color filter layer 182 disposed on the light conversion layer 184. The light conversion layer 184 is disposed between the color filter layer 182 and the buffer structure 120b.

[0103] Other embodiments will be listed below for illustration. It must be noted that the following embodiments use the component numbers and some contents of the previous embodiments, wherein the same numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the previous embodiments, and the following embodiments will not be repeated.

[0104] Figure 7 This is a cross-sectional diagram of an electronic device according to a second embodiment of the present disclosure. Figure 7 and Figure 6 The electronic device 100a of this embodiment and Figure 6 The electronic device 100 of the present embodiment is similar to the electronic device 100 of the present embodiment, but the difference between the two is that in the electronic device 100a of the present embodiment, the light emitting element 130a is a flip-chip type, and the electronic device 100a of the present embodiment does not need to be provided with Figure 6 The transparent conductive layer 170 in the electronic device 100 is shown.

[0105] Specifically, please refer to Figure 7The first electrode E1a may penetrate the molding material layer 140 and may electrically connect the first semiconductor layer 131a of the light emitting element 130a and the first pad 1511 of the first conductive layer 151. The first electrode E1a may overlap a portion of the first semiconductor layer 131a in the direction Z.

[0106] Figure 8 This is a cross-sectional diagram of an electronic device according to a third embodiment of the present disclosure. Figure 8 and Figure 6 The electronic device 100b of this embodiment and Figure 6 The electronic device 100 of the embodiment is similar to the electronic device 100 of the embodiment, but the difference between the two is that: in the electronic device 100b of the present embodiment, the plurality of light emitting elements 130b further include a plurality of grooves 134, and the light conversion layer 184b of the optical module 180b is accommodated in the plurality of grooves 134.

[0107] Specifically, please refer to Figure 8 , a plurality of grooves 134 are disposed on a side of the light emitting element 130b away from the driving substrate 160. The grooves 134 are recessed in the first semiconductor layer 131b, and the grooves 134 can expose the first semiconductor layer 131b. In the direction Z, the grooves 134 can overlap and correspond to the opening O2 of the buffer structure 120b, and the grooves 134 can be connected to the opening O2 of the buffer structure 120b.

[0108] In the present embodiment, the transparent conductive layer 170b is disposed on the buffer structure 120b, in the plurality of openings O2, and in the plurality of grooves 134, so that the transparent conductive layer 170b can be electrically connected to the plurality of light emitting elements 130b through the plurality of openings O2 and the plurality of grooves 134. In addition, the transparent conductive layer 170b can contact the conductive material of the first electrode E1 and the first semiconductor layer 131b of the light emitting element 130b.

[0109] In this embodiment, the optical module 180b may include a substrate 181, a color filter layer 182, an insulating layer 183b, and a light conversion layer 184b. The color filter layer 182 is disposed under the substrate 181, and the color filter layer 182 is disposed between the substrate 181 and the light conversion layer 184b. The insulating layer 183b is disposed under the color filter layer 182 and in a plurality of openings O2. The light conversion layer 184b is disposed under the insulating layer 183b and in a plurality of grooves 134. In the direction Z, the light conversion unit 1841 may overlap and correspond to the light emitting element 130b and the filter unit 1821 of the color filter layer 182.

[0110] Fig. 9 This is a cross-sectional diagram of an electronic device according to a fourth embodiment of the present disclosure. Fig. 9 and Figure 6 The electronic device 100c of this embodiment and Figure 6The electronic device 100c of the present embodiment is similar to the electronic device 100 of the present embodiment, but the difference between the two is that the electronic device 100c of the present embodiment further includes a light sensing element 190, a first transparent material layer 192, a second transparent material layer 194 and a third transparent material layer 196.

[0111] Specifically, please refer to Fig. 9 , the first transparent material layer 192 is disposed between the buffer structure 120b and the connection layer 150, and the first transparent material layer 192 can penetrate the molding material layer 140. The second transparent material layer 194 is disposed between the insulating layer 183 and the insulating layer 185 of the optical module 180, and the second transparent material layer 194 can penetrate the partition layer 1842 of the light conversion layer 184. The third transparent material layer 196 is disposed between the substrate 181 and the insulating layer 183 of the optical module 180, and the second transparent material layer 194 can penetrate the black matrix layer 1822 of the color filter layer 182. In the present embodiment, the materials of the first transparent material layer 192, the second transparent material layer 194, and the third transparent material layer 196 may include optical adhesive (OCA) or transparent optical adhesive (OCR), but are not limited thereto.

[0112] The light sensing element 190 is disposed in the circuit layer 162c of the driving substrate 160c. In the direction Z, the light sensing element 190, the first transparent material layer 192, the second transparent material layer 194 and the third transparent material layer 196 overlap and correspond to each other, and the light sensing element 190 does not overlap the light emitting element 130. Thus, the external light signal L can enter the electronic device 100c substantially along the path of the connection direction of the first transparent material layer 192, the second transparent material layer 194 and the third transparent material layer 196 and be detected by the light sensing element 190.

[0113] In this embodiment, the light sensing element 190 may be used, for example, for human eye recognition and tracking; or for measuring the ambient light intensity to adjust the display brightness of the electronic device 100 c .

[0114] In some embodiments not shown, the first transparent material layer may further penetrate downwards through the connection layer and the primer and extend to the light sensing element.

[0115] Fig.10 This is a cross-sectional diagram of an electronic device according to a fifth embodiment of the present disclosure. Fig.10 and Fig. 9 The electronic device 100d of this embodiment and Fig. 9 The electronic device 100c is similar to the electronic device 100d of the embodiment, but the difference between the two is that in the electronic device 100d of the embodiment, the light sensing element 190d is disposed in the second insulating layer IL2 of the connecting layer 150d. The light sensing element 190d can be electrically connected to the driving substrate 160 through the connecting layer 150d.

[0116] Fig.11 This is a cross-sectional diagram of an electronic device according to a sixth embodiment of the present disclosure. Fig.11 and Fig. 9 The electronic device 100e of this embodiment and Fig. 9 The electronic device 100e of the present embodiment is similar to the electronic device 100c of the present embodiment, but the difference between the two is that in the electronic device 100e of the present embodiment, the light sensing element 190e is disposed in the molding material layer 140e.

[0117] Specifically, please refer to Fig.11 The light sensing element 190e is disposed between the buffer structure 120b and the connection layer 150, and the light sensing element 190e can be electrically connected to the driving substrate 160 through the connection layer 150. In addition, the external light signal L can enter the electronic device 100e substantially along the path of the connection direction of the second transparent material layer 194 and the third transparent material layer 196 and be detected by the light sensing element 190e.

[0118] In summary, in the electronic device and the manufacturing method thereof of the disclosed embodiment, since the second surface of the buffer structure is a rough surface and the roughness of the second surface of the buffer structure is greater than the roughness of the first surface, the light irradiated by the light-emitting element and passing through the buffer structure can be scattered, thereby reducing the influence of the light on the light emitted by other light-emitting elements adjacent to the light-emitting element, reducing the probability of light mixing between two adjacent light-emitting elements, reducing the probability of light mixing between pixels of different colors, or collecting light to improve light efficiency.

[0119] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. An electronic device, characterized in that: include: Driver substrate; A connection layer, disposed on the driving substrate; A plurality of light emitting elements are electrically connected to the driving substrate through the connection layer; as well as a buffer structure disposed on the plurality of light emitting elements and comprising a plurality of openings, wherein the plurality of openings overlap the plurality of light emitting elements; The buffer structure has a first surface adjacent to the plurality of light-emitting elements and a second surface away from the plurality of light-emitting elements, and the roughness of the second surface is greater than the roughness of the first surface.

2. The electronic device according to claim 1, characterized in that: Also includes: The optical module is arranged on the buffer structure and comprises a light conversion layer and a color filter layer arranged on the light conversion layer.

3. The electronic device according to claim 2, characterized in that: Also includes: The adhesive layer is disposed between the optical module and the buffer structure.

4. The electronic device according to claim 3, characterized in that: Also includes: The transparent conductive layer is disposed on the buffer structure and is electrically connected to the plurality of light emitting elements through the plurality of openings.

5. The electronic device according to claim 3, characterized in that: The plurality of light emitting elements include a plurality of grooves, and the electronic device further includes: The light conversion layer is accommodated in the plurality of grooves.

6. A method for manufacturing an electronic device, characterized in that: include: Provides a base layer; forming a buffer layer on the base layer; forming a light-emitting element layer on the buffer layer; patterning the light emitting element layer to form a plurality of light emitting elements; forming a connection layer on the plurality of light-emitting elements; Bonding the connection layer to the driving substrate; Applying laser to the buffer layer to separate the base layer and the plurality of light-emitting elements from each other; as well as A portion of the buffer layer remaining on the plurality of light emitting elements is removed to form a buffer structure, wherein the buffer structure includes a plurality of openings, and the plurality of openings expose the plurality of light emitting elements.

7. The manufacturing method according to claim 6, characterized in that: Also includes: The optical module is attached to a side of the plurality of light emitting elements away from the driving substrate.

8. The manufacturing method according to claim 7, characterized in that: The optical module includes a substrate, a light conversion layer and a color filter layer, and the color filter layer is arranged between the substrate and the light conversion layer.

9. The manufacturing method according to claim 6, characterized in that: After the step of patterning the light emitting element layer to form the plurality of light emitting elements, the method further comprises: The plurality of light emitting elements are encapsulated with a molding material layer.

10. The manufacturing method according to claim 9, characterized in that: Also includes: forming an opening in the molding material layer to expose a portion of the connecting layer; Filling the opening with a conductive material; as well as A transparent conductive layer is formed on the buffer structure so that the transparent conductive layer contacts the conductive material.

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