Adjustable base

Abstract

A susceptor assembly for a substrate processing system configured to perform body deposition on a substrate is configured to be raised and lowered. The base assembly includes: a rod portion; the bottom plate part and the pumping ring assembly are placed on the rod part. The base plate portion is configured to support the substrate. The pumping ring assembly is disposed about the floor portion and includes a lower pumping ring, and an upper pumping ring disposed above the lower pumping ring. The pumping ring assembly is configured to define an annular volume radially outward of the pumping ring assembly such that the pumping ring assembly separates the annular volume from a volume defined below the floor portion of the base assembly.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 413,837, filed on October 6, 2022. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to pedestal designs for substrate processing systems. Background Art

[0003] The background description provided here is for the purpose of generally presenting the background of the present disclosure. The work of the currently designated inventors within the scope described in this background section and aspects of the specification that were not determined to be prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0004] Substrate processing tools typically include multiple stations to perform deposition, etching, and other processes on a substrate (e.g., a semiconductor wafer). Examples of processes that can be performed on a substrate include a chemical vapor deposition (CVD) process, a chemically enhanced plasma vapor deposition (CEPVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, a sputtering physical vapor deposition (PVD) process, an atomic layer deposition (ALD), and a plasma enhanced ALD (PEALD). Additional examples of processes that can be performed on a substrate include etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.) and cleaning processes.

[0005] During processing, a substrate is disposed in a processing chamber on a substrate support (e.g., an electrostatic chuck (ESC) or a pedestal). A processing gas is introduced into the processing chamber, and, in some examples, a plasma is ignited. The processing gas is introduced using a gas distribution device (e.g., a showerhead). Summary of the invention

[0006] A pedestal assembly for a substrate handling system configured to perform bulk deposition on a substrate is configured to be raised and lowered. The pedestal assembly includes: a stem portion; a bottom plate portion placed on the stem portion and a pumping ring assembly. The bottom plate portion is configured to support the substrate. The pumping ring assembly is placed around the bottom plate portion and includes a lower pumping ring, and an upper pumping ring placed above the lower pumping ring. The pumping ring assembly is configured to define an annular volume radially outward of the pumping ring assembly, such that the pumping ring assembly separates the annular volume from a volume defined below the bottom plate portion of the pedestal assembly.

[0007] In other features, the base assembly further includes a cover ring configured to be supported on the bottom plate portion when the base assembly is in a raised position, and the cover ring includes an inner edge configured to overlap and extend above an outer edge of the substrate when the substrate is disposed on the bottom plate portion. When the base assembly is in a lowered position, the upper pumping ring is configured to support the cover ring. The upper pumping ring includes a protrusion extending radially inwardly, and wherein the cover ring is supported on the protrusion. The upper pumping ring includes an inner annular recess defined in the protrusion, and wherein the cover ring is supported in the inner annular recess.

[0008] In other features, the pedestal assembly further includes a backside purge volume defined between the bottom plate portion and the cover ring and located below the outer edge of the substrate and the inner edge of the cover ring. The pedestal assembly further includes a plurality of holes in the upper surface of the bottom plate portion defined within the backside purge volume. The plurality of holes are configured to supply purge gas to the backside purge volume. The pedestal assembly further includes a plurality of holes defined in the upper pumping ring. The plurality of holes are configured to allow reactants to flow from a deposition volume above the bottom plate portion to the volume defined below the bottom plate portion.

[0009] In other features, the base assembly includes a gap defined between the upper pumping ring and the lower pumping ring. The gap is configured to allow reactants to flow radially outward from below the lower pumping ring into the annular volume radially outward of the lower pumping ring assembly. The lower pumping ring is generally "C" shaped. The lower pumping ring includes an annular body portion and legs extending radially outward from upper and lower ends of the annular body portion.

[0010] In other features, a process chamber assembly includes the base assembly. The process chamber assembly also includes a first region of the volume defined below the bottom plate portion. The annular volume radially outward of the pumping ring assembly is defined between an inner surface of the first region and an outer surface of the lower pumping ring. The process chamber assembly also includes a top plate placed on the first region, wherein the top plate defines a deposition volume above the bottom plate portion. The lower pumping ring is mounted at a lower surface of the top plate.

[0011] A substrate support for a substrate processing system configured to perform bulk deposition on a substrate includes a bottom plate portion and a pumping ring assembly. The bottom plate portion is configured to support the substrate. The pumping ring assembly is disposed around the bottom plate portion. The pumping ring assembly is configured to define an annular volume radially outward of the pumping ring assembly, such that the pumping ring assembly separates the annular volume from a volume defined below the bottom plate portion of the substrate support.

[0012] In other features, the pumping ring assembly includes a lower pumping ring and an upper pumping ring positioned above the lower pumping ring. The bottom plate portion includes an outward step. The substrate support also includes a cover ring configured to be supported on the outward step. The substrate support is configured to be raised and lowered. When the substrate support is in a raised position, the cover ring is configured to be supported on the outward step, and when the substrate support is in a lowered position, the cover ring is configured to be supported on the upper pumping ring. The upper pumping ring includes a plurality of holes configured to allow reactants to flow from a deposition volume above the bottom plate portion to the volume defined below the bottom plate portion. The gap defined between the lower pumping ring and the upper pumping ring is configured to allow reactants to flow from below the upper pumping ring into the annular volume radially outward of the pumping ring assembly.

[0013] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0015] Figure 1 is a functional block diagram of a substrate processing system according to the present disclosure, including an exemplary carrier ring;

[0016] Figure 2 An exemplary processing chamber, showerhead, and substrate support according to the present disclosure are shown;

[0017] Figure 3A A processing chamber assembly including a susceptor assembly according to the present disclosure is shown.

[0018] Figure 3B shows an example pumping ring disposed about a base assembly according to the present disclosure; and

[0019] Figure 3C An exemplary backside clearing volume about a floor portion of a base assembly according to the present disclosure is shown.

[0020] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0021] A substrate processing tool includes one or more processing modules or chambers. For example, a multi-station module (e.g., a quad station module (QSM)) includes multiple stations in which deposition, etching, and other processes are performed on a substrate. Different processes may be implemented in each station. In contrast, a single station module includes only a single station.

[0022] In some examples, a nucleation process (e.g., an atomic layer deposition (ALD) nucleation step) is performed in a first station of a multi-station module, while a bulk fill / deposition step is performed in other stations of the multi-station module. The optimal chamber size and geometry and / or process parameters may be different for each step. For example, the optimal chamber pressure and temperature for the nucleation step may be lower than the optimal chamber pressure and temperature for the bulk deposition step. However, because the stations in a multi-station module share the same process chamber, the process chamber conditions may not be optimal for the nucleation or bulk deposition steps.

[0023] A processing module according to the present disclosure includes components optimized for the bulk deposition step of an ALD process. For example, the processing module is a single-station module that is configured to perform the bulk deposition step separately from the nucleation step. The nucleation step can be performed in a different module or tool before being transferred to the processing module. Thus, the nucleation and bulk deposition steps can be performed under their respective optimal processing conditions. Although described with respect to bulk deposition, the principles of the present disclosure may also be applied to other types of deposition.

[0024] The processing module includes a substrate support (e.g., a pedestal having one or more heating zones), a carrier or cover ring, and one or more pumping rings disposed around the pedestal. The one or more pumping rings may include a lower pumping ring and an upper pumping ring. The cover ring extends over and overlaps the outer edge of the substrate to reduce deposition on the outer edge of the substrate. For example, an inert gas is supplied to the gap between the pedestal and the cover ring and around the outer edge of the substrate. The outer edge of the cover ring is suspended above the inner edge of the upper pumping ring. Therefore, when the pedestal is lowered to transfer the substrate, the cover ring is supported on the upper pumping ring. Conversely, when the pedestal is raised, the outer edge of the pedestal supports the cover ring.

[0025] Reference now Figure 1 , shows an example of a substrate processing system 100 including a process chamber 104 according to the present disclosure. The process chamber 104 is composed of an assembly of multiple sections or portions (e.g., separately processed process chamber sections), as described in more detail below. The process chamber 104 is configured to improve pumping uniformity during purge.

[0026] Showerhead 108 is disposed within an upper surface or portion of processing chamber 104. During processing, substrate 112 is disposed on substrate support 116 (eg, a susceptor for CVD and / or ALD deposition). For example, bulk deposition of an ALD process is performed on substrate 112.

[0027] The gas delivery system 120 includes gas sources 122-1, 122-2, ..., and 122-N (collectively referred to as gas sources 122), which are connected to valves 124-1, 124-2, ..., and 124-N (collectively referred to as valves 124) and mass flow controllers 126-1, 126-2, ..., and 126-N (collectively referred to as MFCs 126). MFCs 126 control the flow of gases from gas sources 122 to manifold 128, where the gases are mixed. The output of manifold 128 is supplied to manifold 136. The output of manifold 136 is input to the showerhead 104 (e.g., a multi-injection port, multi-zone showerhead, as described in more detail below). Although manifolds 128 and 136 are shown, a single manifold may be used.

[0028] In some examples, a resistive heater 144 can be used to control the temperature of the substrate support 116. In some examples, the resistive heaters 144 are arranged in different heating zones to individually control the temperature in the corresponding heating zones of the substrate support 116. The substrate support 116 can include a coolant channel 146. The cooling fluid is supplied to the coolant channel 146 from a fluid reservoir 148 and a pump 150. Pressure sensors 152, 154 can be respectively configured in the manifold 128 or the manifold 136 to measure the pressure. The valve 156 and the pump 158 can be used to evacuate (i.e., purge) the reactants from the process chamber 104, and / or control the pressure within the process chamber 104.

[0029] The controller 160 includes a dosing controller 162 that controls the dosing provided by the showerhead 108. The controller 160 also controls the delivery of gases from the gas delivery system 120. The controller 160 controls the pressure in the process chamber and / or the purging of reactants using the valve 156 and the pump 158. The controller 160 controls the temperature of the substrate support 116 and the substrate 112 based on temperature feedback (e.g., from a sensor in the substrate support (not shown) and / or a sensor measuring the coolant temperature (not shown)).

[0030] Although described as being used to perform a deposition process, the substrate processing system 100 can be configured to perform an etching process. In some examples, the substrate processing system 100 can be configured to perform etching on the substrate 112 within the same processing chamber 104 as the deposition process. Thus, the substrate processing system 100 can include an RF generation system 164 configured to generate and provide RF power (e.g., as a voltage source, current source, etc.) to one of a lower electrode (e.g., a bottom plate of the substrate support 116, as shown) and an upper electrode (e.g., a showerhead 108). The other of the lower electrode and the upper electrode can be DC grounded, AC grounded, or floating.

[0031] By way of example only, the RF generation system 164 may include an RF generator 166 configured to generate an RF voltage supplied by a matching and distribution network 168 to generate a plasma within the processing chamber 104 to etch the substrate 112. In other examples, the plasma may be generated inductively or remotely. Although, for purposes of example, the RF generation system 164 corresponds to a capacitively coupled plasma (CCP) system, the principles of the present disclosure may also be implemented in other suitable systems, such as, by way of example only, a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generation and delivery system, and the like.

[0032] The substrate support 116 includes a cover ring 170. In some examples, the inner edge of the cover ring 170 overlaps the outer edge of the substrate 112. In some examples, the substrate support 116 is lowered to transfer the substrate 112 into the processing chamber 104. For example, the substrate 112 is transferred to the lift pins ( Figure 1 When the substrate support 116 is lowered, the cover ring 170 may be supported on a structure such as a pumping ring, as described in more detail below. The substrate support 116 is then raised to engage the substrate 112 and the cover ring 170.

[0033] In some examples, the process chamber 104 is purged through one or more purge ports 180 (e.g., bottom purge ports) located in a bottom surface of the process chamber 104. For example, the valve 156 and the pump 158 are controlled to selectively purge reactants downward through the process chamber 104 and out of the purge ports 180. The process chamber 104 and substrate support 116 according to the present disclosure are configured to increase the symmetry of the purge volume defined within the process chamber 104 and to promote uniform, annular distribution of pumping flow, as described in more detail below.

[0034] Figure 2 An exemplary process chamber 200 including a substrate support (e.g., pedestal) 204 according to the present disclosure is shown. In some examples, the process chamber 200 is composed of a multi-component assembly. In one example, the process chamber 200 corresponds to a station of a single-station module. The process chamber 200 is configured to supply reactants from a showerhead 206 to perform a bulk deposition step on a substrate 208 after performing a nucleation step in a different process chamber. For example, after the nucleation step, the substrate 208 is transferred to a substrate support (e.g., pedestal) 212 disposed within the process chamber 200.

[0035] In one example, when the pedestal 204 is in the lowered position, the substrate 208 is transferred through a slot or other opening 214 in the sidewall of the processing chamber 200. When the pedestal 204 is in the lowered position, the lift pins 216 extend above the upper surface of the pedestal 204, and the substrate 208 is placed onto the lift pins 216 (e.g., using a transfer robot). Next, the pedestal 204 is raised to lift and support the substrate 208 in the raised position, such as Figure 2 In other words, the lift pins 216 are static (i.e., fixed) lift pins that are neither raised nor lowered. In contrast, the susceptor 204 is raised and lowered to place the substrate 208.

[0036] Each of the process chamber 200, the showerhead 206, and the pedestal 204 is configured to minimize azimuthal asymmetry in a deposition region 218 defined between the showerhead 206 and the pedestal 204. For example, the deposition region 218 is a symmetrical annular volume defined between a substrate-facing lower faceplate 220 of the showerhead 206, an annular inner surface 222 of the process chamber 200, and the pedestal 204. In addition, the gap between the faceplate 220 and the pedestal 204 is minimized to maintain uniformity of process gas flow and distribution within the deposition region 218.

[0037] The showerhead 206 is composed of a base or head 226 and a stem 228. The stem 228 extends through the upper wall (e.g., cover 230) of the processing chamber 200 to connect to the head 226. For example, the head 226 includes a face plate 220, a back plate 232, and an intermediate plate 234 disposed between the face plate 220 and the back plate 232. In this example, the face plate 220 serves as the upper surface of the processing chamber 200.

[0038] The face plate 220, the back plate 232, and the intermediate plate body 234 define at least three flow paths and corresponding plenums 238 within the head 226 to provide radial adjustability and process configurability. For example, one or more plenums 238-1 are defined in the upper surface of the face plate 220, the plenum 238-2 is defined in the upper surface of the intermediate plate body 234, the plenum 238-3 is defined in the upper surface of the back plate 232, and the plenum 238-4 is defined in the face plate 220 radially outward of the plenum 238-1. The plenums 238-1, 238-2, 238-3, and 238-4 are collectively referred to as plenums 238.

[0039] As shown, a first flow path (shown as a solid line / arrow) 240 supplies gas through the stem 228 and into a corresponding plenum defined in a central region 242 of the panel 220. A second flow path (shown as a dotted line / arrow) 244 supplies gas through the stem 228 and into a corresponding plenum defined in a radial or middle region 246 of the panel 220. A third flow path (shown as a dashed line / arrow) 248 supplies gas through the stem 228 and into a corresponding plenum defined in an outer or edge region 250 of the panel 220. By way of example only, the first flow path 240 is routed through the rod portion 228 to supply gas to the center region 242 through the center inlet 252-1; the second flow path 244 is routed through the back plate 232 and the middle plate body 234 to supply gas to the middle region 246 through the middle inlet 252-2; and the third flow path 248 is routed through the back plate 232 and the middle plate body 234 to supply gas to the edge region 250 through the edge inlet 252-3.

[0040] The faceplate 220 includes a plurality of holes 254 extending from the plenum 238 to the deposition region 218 within the process chamber 200. For example, gas in the first flow path 240 flows through holes 254 in the center region 242, gas in the second flow path 244 flows through holes 254 in the middle region 246, and gas in the third flow path 248 flows through holes 254 in the edge region 250.

[0041] The gases supplied to the center region 242, the middle region 246, and the edge region 250 may be independently controlled to add or remove specific reactants (i.e., gases) supplied to the respective regions of the substrate 208. By way of example only, the gas mixture supplied to the deposition region 218 to perform bulk deposition may include various reactive and non-reactive gases, such as argon (Ar), molecular hydrogen (H2), tungsten hexafluoride (WF6), molecular nitrogen (N2), etc. In other examples, other gases and gas mixtures may be supplied, such as diborane (C2H6), silane (SiH4), etc. The amount of each gas supplied to the respective regions 242, 246, 250 may be controlled (e.g., using individually controllable components of a gas control system, such as the gas control system 120) to adjust the deposition rate and film properties in different regions of the substrate 208. In other words, the amount of each gas supplied to each region may be independently controlled.

[0042] like Figure 2As shown, the gas provided to the edge region 250 via the third flow path 248 is provided only to the outermost hole 260 in the panel 220. In other words, the third flow path 248 does not supply gas to the central region 242 and the middle region 246. For example, the hole 260 is in fluid communication with the plenum 238-3 and the plenum 238-4 defined in the edge region 250 of the panel 220, but is not in fluid communication with the plenum 238-1 defined in the central region 242 and the middle region 246. As an example, the plenum 238-4 in the edge region 250 is separated from the plenum 238-1 in the central region 242 and the middle region 246.

[0043] On the contrary, the plenum 238-1 may correspond to a single plenum defined in both the central region 242 and the middle region 246. Therefore, the gas supplied via the first flow path 240 and the second flow path 244 is supplied to the same plenum 238-1. The gas supplied via the first flow path 240 and the second flow path 244 mixes within the plenum 238-1 and flows through the hole 254.

[0044] As shown, the process chamber 200 is an assembly consisting of a first section (e.g., an upper section) 264, a second section (e.g., a lower section) 268, and a third section (e.g., a bottom plate) 272. For example, the first section 264, the second section 268, and the third section 272 are separately machined aluminum sections that are welded together to form the process chamber 200. The process chamber 200 may include a fourth section (e.g., a top plate or top section) 276, which is configured to engage with the showerhead 206 and the cover 230 and define the deposition area 218.

[0045] The pedestal 204 according to the present disclosure is configured to support a cover ring 280. The cover ring 280 includes an inner edge or lip that extends over and overlaps / covers the outer edge of the substrate 208. In this manner, the cover ring 280 reduces deposition on the outer edge of the substrate 208. When the pedestal 204 is lowered, the cover ring 280 is supported on a protrusion 282, such as an upper pumping ring ( Figure 2 (not shown) as shown below Figure 3A Described in more detail in .

[0046] Figure 3A A process chamber assembly 300 including a pedestal or pedestal assembly 304 according to the present disclosure is shown. In some examples, according to a more detailed presentation of the present disclosure, the process chamber assembly 300 is composed of multiple sections, such as a first section 308-1, a second section 308-2, and a third section 308-3 (collectively referred to as sections 308). For simplicity of illustration, Figure 2 Some details shown in FIG. 2 (such as nozzle 206, lift pin 216, etc.) are shown in FIG. Figure 3A308-1. The various manifolds, plenums or internal volumes, channels defined within the segment 308 are shown as dashed lines. Although shown as three segments (e.g., separately machined segments welded together), in other examples, the assembly 300 may be composed of fewer or more than three segments and / or formed by different manufacturing methods (e.g., additive manufacturing). The fourth segment 310 or top plate (e.g., corresponding to the fourth segment 276) may be disposed on the first segment 308-1.

[0047] The first section 308-1 defines a generally annular plenum or volume that includes a middle portion 312-1 and an upper portion 312-2 (collectively referred to as the first volume 312 together with the lower portion 312-3) surrounding the base assembly 304. For example, the middle portion 312-1 surrounds the stem portion 318 of the base assembly 304 below the bottom plate portion 320 of the base assembly 304. The diameter of the middle portion 312-1 is generally equal to (or, as shown, slightly larger than) the diameter of the bottom plate portion 320. The upper portion 312-2 surrounds the bottom plate portion 320. The upper portion 312-2 may have a stepped configuration. In other words, as shown, the outer diameter of the upper portion 312-2 is stepped radially outwardly relative to the bottom plate portion 320 one or more times. The upper portion 312-2 serves as a first manifold or a first-stage manifold.

[0048] The first section 308-1 may include one or more slots 322-1 and 322-2 (collectively referred to as slots 322) that provide access to the first volume 312. For example, slot 322-1 provides a path for a substrate to be transferred onto the susceptor assembly 304, as described above. Conversely, slot 322-2 may be used as a viewing port to allow visual access to the first volume 312, the susceptor assembly 304, etc.

[0049] The second section 308-2 defines a plurality of plenums or volumes, including a lower portion 312-3 of the first volume 312, an annular second volume 324, and an annular third volume 328. The lower portion 312-3 and the second volume 324 are defined in the upper surface of the second section 308-2. For example, the lower portion 312-3 is adjacent to the middle portion 312-1 and surrounds the rod portion 318. The second volume 324 is located radially outward of the lower portion 312-3. The second volume 324 serves as a second manifold or a second-stage manifold. In contrast, the third volume 328 is defined in the lower surface of the second section 308-2. For example, the third volume 328 has a substantially "L"-shaped cross-section. The third volume 328 serves as a third manifold or a third-stage manifold.

[0050] In some examples, a purge plate 330 (e.g., an annular or disc-shaped plate) is disposed in the lower portion 312-3 around the stem 318. The purge plate 330 separates the first volume 312 from a bottom purge port 332 extending through the second section 308-2 and the third section 308-3. The purge plate 330 includes a plurality of holes or annular grooves 334. In contrast, the third volume 328 is in fluid communication with a main pumping port 336 extending through the third section 308-3.

[0051] The upper portion 312-2 of the first volume 312, the second volume 324, and the third volume 328 correspond to the first, second, and third stage manifolds, respectively, to provide internal pumping passages through the first, second, and third sections 304 of the assembly 300. Various channels 340 extend between the upper portion 312-2 and the second volume 324, between the second volume 324 and the third volume 328, and so on, and are fluidly coupled thereto. The channels 340 can be arranged in a circular pattern. For example, the channels 340 include a plurality of holes formed in the first section 308-1 and the second section 308-2.

[0052] The upper portion 312-2 of the first volume 312, the second volume 324, the third volume 328, and the channel 340 define an internal pumping passage that provides a first flow path 342 for discharging reactants from a deposition volume 344 above the base assembly 304 to the main pumping port 336. For example, as shown, the first flow path 342 is located radially outward of the middle portion 312-1 of the first volume 312 and the bottom plate portion 320 of the base assembly 304. The components defining the first flow path 342 are configured to improve pumping uniformity and symmetry to reduce backside deposition on the base assembly 304. In contrast, the bottom purge port 332 optionally provides additional pumping / purge flow out of the first volume 312 via an additional flow path 348 out of the first volume 312.

[0053] The susceptor assembly 304 according to the present disclosure supports a cover ring 352. For example, the upper surface of the bottom plate portion 320 has an outward step 354 configured to support the cover ring 352. The cover ring 352 includes an inner lip or inner edge 356 that extends over and overlaps / covers the outer edge of a substrate 360 ​​disposed on the susceptor assembly 304. The inner edge 356 of the cover ring 352 reduces deposition on the outer edge of the substrate 360.

[0054] The base assembly 304 includes a lower pumping ring 364-1 and an upper pumping ring 364-2 (collectively referred to as a pumping ring assembly or pumping ring 364) arranged around the periphery of the bottom plate portion 320. For example, the pumping ring 364 is annular. The pumping ring 364 separates the upper portion 312-2 of the first volume 312 from the middle portion 312-1. The pumping ring 364 is configured to regulate the flow of the reactant from the deposition volume 344 into the upper portion 312-2 via the first flow path 342. Therefore, when the main pumping port 336 is operated as described above to evacuate the deposition volume 344, the reactant is sucked into the upper portion 312-2 via the pumping ring 364, and then passes through the second volume 324 and the third volume 328.

[0055] like Figure 3A As shown and in more detail see Figure 3B , the upper pumping ring 364-2 is mounted to the bottom surface of the top plate 310 (e.g., between the top plate 310 and the first section 308-1). For example, the upper pumping ring 364-2 is attached to the top plate 310 by fasteners (e.g., screws). The upper pumping ring 364-2 includes a protrusion (e.g., a step or protrusion extending radially inward) 368 disposed below the outer edge of the cover ring 352. Therefore, when the base assembly 304 is lowered to facilitate the transfer of the substrate 360 ​​to and from the bottom plate portion 320, the cover ring 352 is supported on the protrusion 368. For example, the protrusion 368 can define an annular inner recess 372 configured to support the cover ring 352.

[0056] like Figure 3B As shown, protrusion 368 includes a plurality of openings or holes 376. Holes 376 are arranged circumferentially around protrusion 368. Holes 376 are configured to allow reactants to flow from above upper pumping ring 364-2 through upper pumping ring 364-2 (i.e., from deposition volume 344) to below upper pumping ring 364 (i.e., to first volume 312).

[0057] In contrast, the lower pumping ring 364-1 is mounted to the upper surface of the first segment 308-1 within the upper portion 312-2 of the first volume 312. For example, the lower pumping ring 364-1 is generally "C" shaped and includes a radially inner vertical portion (e.g., annular body portion) 378 and horizontal legs 380 extending radially outward from the upper and lower ends of the body portion 378. The upper portion 312-2 of the first volume 312 is defined between the outer surface of the lower pumping ring 364-1 and the inner surface of the first segment 308-1.

[0058] A flow channel or gap 382 (eg, a horizontal gap) is defined between the upper surface of the lower pumping ring 364-1 and the lower surface of the upper pumping ring 364-2. The gap 382 allows reactants to flow radially outward between the pumping rings 364 and into the upper portion 312-2.

[0059] Reference now Figure 3CAnd continue to refer to Figure 3A and Figure 3B , an annular backside sweep volume or gap 384 is defined between an outer surface 386 of the bottom plate portion 320 and an inner surface 388 of the cover ring 352. A plurality of holes 390 are circumferentially disposed in a portion of the outward step 354 within the sweep volume 384. The holes 390 are disposed within the backside sweep volume 384 below the outer edge of the substrate 360 ​​and the inner edge 356 of the cover ring 352.

[0060] Gas (e.g., purge gas or an inert gas, such as argon) is supplied to the backside purge volume 384 via apertures 390. For example, gas may be supplied to one or more plenums 392 (e.g., Figure 3B 390 and enter the backside purge volume 384. The gas supplied to the backside purge volume 384 in this manner pressurizes the backside purge volume 384 and prevents reactants from flowing between the outer edge of the substrate 360 ​​and the cover ring 352. Deposition on the backside is thereby reduced.

[0061] In addition, front deposition (i.e., on the upper surface) at the outermost edge (e.g., outermost 1 mm, bevel region, etc.) of substrate 360 ​​is reduced or eliminated. Typically, substrate handling components contact the outermost edge of substrate 360 ​​during transport. Contact between substrate handling components and deposited material on the edge of substrate 360 ​​may cause particles of deposited material to fall off. Therefore, supplying purge gas to backside purge volume 384 can prevent deposition on the outermost edge and / or bevel of substrate 360 ​​to reduce potential particle generation.

[0062] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0063] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship may be a direct relationship, in which no other intervening elements exist between the first and second elements, but may also be an indirect relationship, in which there is a direct connection between the first and second elements. There are one or more intermediate elements (either spatially or functionally). As used herein, the phrase "A, At least one of B and C should be construed to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0064] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools connected or docked with specific systems and other transfer tools and / or load locks.

[0065] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing specific processing on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0066] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or may be all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, to change the parameters of the current processing, set processing steps to follow the current processing, or start a new processing. In some examples, a remote computer (e.g., a server) may provide a processing recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., processing and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control processing on the chamber.

[0067] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0068] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A pedestal assembly for a substrate processing system, the substrate processing system being configured to perform bulk deposition on a substrate, wherein the pedestal assembly is configured to be raised and lowered, the pedestal assembly comprising: Rod; a bottom plate portion placed on the stem portion, wherein the bottom plate portion is configured to support the substrate; and a pumping ring assembly disposed about the bottom plate portion, wherein the pumping ring assembly includes (i) a lower pumping ring, and (ii) an upper pumping ring disposed above the lower pumping ring, and wherein the pumping ring assembly is configured to define an annular volume radially outward of the pumping ring assembly such that the pumping ring assembly separates the annular volume from a volume defined below the bottom plate portion of the base assembly.

2. The base assembly according to claim 1 further includes a cover ring, which is configured to be supported on the bottom plate portion when the base assembly is in a raised position, and when the substrate is arranged on the bottom plate portion, the cover ring includes an inner edge configured to overlap with an outer edge of the substrate and extend above the outer edge. 3 . The base assembly of claim 2 , wherein the upper pumping ring is configured to support the cover ring when the base assembly is in a lowered position.

4. The base assembly of claim 3, wherein the upper pumping ring includes a radially inwardly extending protrusion, and wherein the cover ring is supported on the protrusion.

5. The base assembly of claim 4, wherein the upper pumping ring includes an inner annular recess defined in the projection, and wherein the cover ring is supported in the inner annular recess.

6. The susceptor assembly of claim 3, further comprising a backside purge volume defined between the bottom plate portion and the cover ring and below the outer edge of the substrate and the inner edge of the cover ring.

7. The susceptor assembly of claim 6, further comprising a plurality of holes defined in an upper surface of the bottom plate portion within the back purge volume, wherein the plurality of holes are configured to supply purge gas to the back purge volume.

8. The susceptor assembly of claim 1, further comprising a plurality of holes defined in the upper pumping ring, wherein the plurality of holes are configured to allow reactants to flow from a deposition volume above the bottom deck portion to the volume defined below the bottom deck portion.

9. The susceptor assembly of claim 8, further comprising a gap defined between the upper pumping ring and the lower pumping ring, wherein the gap is configured to allow reactants to flow radially outward from beneath the lower pumping ring into the annular volume radially outward of the lower pumping ring assembly.

10. The base assembly of claim 9, wherein the lower pumping ring is generally "C" shaped.

11. The base assembly of claim 10, wherein the lower pumping ring includes an annular body portion and legs extending radially outward from upper and lower ends of the annular body portion.

12. A processing chamber assembly comprising the susceptor assembly according to claim 1.

13. The processing chamber assembly of claim 12, further comprising a first region of the volume defined below the floor portion, wherein the annular volume radially outward of the pumping ring assembly is defined between an inner surface of the first region and an outer surface of the lower pumping ring.

14. The processing chamber assembly of claim 13, further comprising a top plate disposed on the first region, wherein the top plate defines a deposition volume above the bottom plate portion.

15. The process chamber assembly of claim 14, wherein the lower pumping ring is mounted at a lower surface of the top plate.

16. A substrate support for a substrate processing system configured to perform bulk deposition on a substrate, the substrate support comprising: a bottom plate portion, wherein the bottom plate portion is configured to support the substrate; and A pumping ring assembly is positioned about the bottom deck, wherein the pumping ring assembly is configured to define an annular volume radially outward of the pumping ring assembly such that the pumping ring assembly separates the annular volume from a volume defined below the bottom deck of the substrate support.

17. The substrate support of claim 16, wherein the pumping ring assembly comprises (i) a lower pumping ring, and (ii) an upper pumping ring disposed above the lower pumping ring.

18. The substrate support of claim 17, wherein the bottom plate portion comprises an outward step, the substrate support further comprising a cover ring configured to be supported on the outward step.

19. A substrate support according to claim 18, wherein the substrate support is configured to be raised and lowered, and wherein (i) when the substrate support is in a raised position, the cover ring is configured to be supported on the outward step, and (ii) when the substrate support is in a lowered position, the cover ring is configured to be supported on the upper pumping ring.

20. The substrate support of claim 17, wherein the upper pumping ring comprises a plurality of apertures configured to allow reactants to flow from a deposition volume above the bottom deck portion to the volume defined below the bottom deck portion, and wherein a gap defined between the lower pumping ring and the upper pumping ring is configured to allow reactants to flow from below the upper pumping ring into the annular volume radially outward of the pumping ring assembly.

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