Quantum dot-containing composition and preparation method thereof

Abstract

The present invention provides a quantum dot-containing composition obtained by dispersing quantum dots that emit fluorescence by excitation light in a resin composition, the quantum dot-containing composition being characterized in that: the quantum dots have a ligand that is coordinated on the surface thereof and a surface coating layer that is bonded to the ligand and contains a siloxane bond; the surface coating layer contains at least one of a substituent contained in a polymer contained in the resin composition, a substituent polymerizable with a polymer contained in the resin composition, or a compound having the same skeleton structure as the polymer. As a result, it is possible to provide a quantum dot-containing composition which maintains the characteristics of quantum dots while improving stability and improving compatibility with a highly polar solvent and a photosensitive resin composition, and a method for preparing the same.

Description

Technical Field

[0001] The invention relates to a quantum dot-containing composition and a preparation method thereof. Background Art

[0002] For semiconductor nanoparticle single crystals, if the crystal size is below the Bohr radius of the exciton, a strong quantum confinement effect will be produced, and the energy level will become discrete. The energy level depends on the size of the crystal, and the light absorption wavelength and the light emission wavelength can be adjusted by the crystal size. In addition, the efficiency of the luminescence brought about by the exciton recombination of the semiconductor nanoparticle single crystal becomes higher due to the quantum confinement effect, and the luminescence is basically an emission line, so if a particle size distribution of uniform size can be achieved, high-brightness narrow-band luminescence can be achieved, so it has received attention. The phenomenon brought about by the strong quantum confinement effect in the above-mentioned nanoparticles is called the quantum size effect, and in order to widely expand its application as a quantum dot using the semiconductor nanoparticle single crystal of this property, research has been carried out.

[0003] As an application of quantum dots, their use as fluorescent materials for displays has been studied. If narrowband, high-efficiency light emission can be achieved, colors that cannot be reproduced using existing technologies can be displayed, and therefore quantum dots are attracting attention as next-generation display materials.

[0004] Currently, quantum dot liquid crystal displays are being commercialized as displays that are being promoted for the use of quantum dots. Attempts have also been made to convert the color of white light or light irradiated by a blue LED backlight through a wavelength conversion component containing quantum dots to green or red. Since the surface of quantum dots is active and the quantum yield gradually decreases due to moisture or oxygen in the atmosphere, it is necessary to study the stability improvement of wavelength conversion components containing quantum dots.

[0005] Various studies have been conducted on the stabilization of wavelength conversion components containing quantum dots. As an example, gas barrier sealing can be cited. An inner layer is formed in which quantum dots are dispersed in an amphiphilic polymer or a compatible polymer, and further dispersed in another resin layer with low air permeability, thereby improving stability. Patent document 1 discloses a method of dispersing quantum dots (QD: Quantum Dot) in a hydrophobic resin layer to form polymer beads, and surface modifying the polymer beads so that they are dispersed in a hydrophilic polymer, thereby dispersing them in a hydrophilic polymer. Since the gas barrier properties of hydrophilic polymers tend to be higher than those of hydrophobic polymers, QDs are dispersed in the above-mentioned two-layer or multi-layer structure. However, for use in liquid crystal display units that may become high temperature and high humidity environments, the gas barrier properties are not sufficient, so a method of using a gas barrier film to clamp the QD film to remove the influence of oxygen or water vapor is adopted.

[0006] Various studies have also been conducted on the preparation method of polymer microspheres. Patent document 2 discloses a method of preparing polymer microspheres containing QD using polysiloxanes having amino groups and polymerizable functional groups, further mixing another polymer having a polymerizable functional group and emulsifying it, thereby further solidifying it. This method can improve the adhesion with QD by using a polymer having a ligand introduced on the surface of QD, and increase the concentration of QD contained in the polymer microsphere, so that stability can be improved. However, the stability of this method is also insufficient, and it is installed by clamping with a barrier film.

[0007] As a study on improving heat resistance and moisture resistance without using a barrier film, Patent Document 3 is disclosed. This method further performs a silazane coating treatment on a multilayer resin composition using the polymer microsphere structure of Patent Document 1 to improve stability.

[0008] In addition, as another attempt, Patent Document 4 is disclosed. In this method, a ligand is coordinated to a quantum dot, a reactive substituent such as a vinyl group or a methacryloyl group is introduced into the ligand, and then a Si-H-containing silicone resin is mixed with a curing agent, and directly spin-coated and heated to cure, thereby producing a film with improved heat resistance and moisture resistance.

[0009] In addition, when applied to color filters, it becomes important to form a quantum dot surface state suitable for its patterning method. Now, for color filters, photolithography has been put into practical use. In this photolithography, a photosensitive resin composition containing a pigment is coated on a glass substrate, and after the solvent is dried, a mask is exposed by UV irradiation, and the uncured portion is removed by alkali development, thereby forming a color pattern, and by repeating this process, a blue, red, and green pattern is formed. In the photolithography, the uncured portion will be wasted, so the raw material loss is large, the process is also cumbersome, and expensive devices will be used, etc., and there are many problems. Therefore, the inkjet method has also been studied in recent years. If it is an inkjet method, there is no loss of raw materials, and for large-scale or large-area, it can be produced without introducing expensive devices, etc., which is competitive in terms of cost.

[0010] Prior art literature

[0011] Patent Literature

[0012] Patent Document 1: U.S. Patent No. 9708532

[0013] Patent Document 2: Japanese Patent Application Publication No. 2016-111292

[0014] Patent Document 3: Japanese Patent Application No. 2019-536653

[0015] Patent Document 4: U.S. Patent Publication No. 20190322926 Summary of the invention

[0016] 1. Technical issues to be resolved

[0017] However, if a barrier film is used as in Patent Documents 1 and 2, not only will the cost increase, but the thickness will also inevitably increase. Currently, liquid crystal displays are being sought to be thinner and the thickness of the wavelength conversion components needs to be reduced, so it is sought to improve stability without using a barrier film. In addition, considering the use of color filters, patterning is required, and it is not realistic to set up a protective layer such as a barrier film, and the stability of the quantum dots themselves is required.

[0018] The method described in patent document 3 has the problem that the quantum yield is reduced when the photocuring of silazane coating is performed by irradiating short ultraviolet rays (170nm). In addition, in the method described in patent document 4, the compatibility of the Si-H-containing silicone resin used with quantum dots is low, and if it is desired to be dispersed at a high concentration, condensation will occur. Therefore, it is necessary to improve the compatibility by ligand treatment, but if the ligand is coordinated, the balance between the hydrophobic group and the hydrophilic group changes, and there is a problem that condensation is easy to occur and the quantum yield is reduced.

[0019] In addition, the inkjet method also has technical difficulties in making fine nozzles, and when the nozzle becomes smaller, it will cause problems such as root clogging or unstable discharge. Therefore, research has been conducted on photolithography, which has practical results in miniaturization, and inkjet, which is competitive in cost. However, both photolithography and inkjet have problems in making resin compositions containing quantum dots in high concentration and high dispersion. Except for some resin compositions, the resin composition is dispersed in polar solvents such as PGMEA or PGME. Quantum dots are basically hydrophobic, and are not easily dispersed in the above-mentioned solvents or resin materials, and will condense. Therefore, it is difficult to make a photosensitive resin composition containing quantum dots in high concentration and high dispersion. As a countermeasure, research on adding dispersants has been conducted, but there are problems such as reducing the quantum dot content or modifying the properties of the cured resin.

[0020] The present invention is made in view of the above problems, and provides a quantum dot composition and a preparation method thereof, which maintains the characteristics of quantum dots while improving stability and compatibility with a high-polarity solvent and a photosensitive resin composition.

[0021] (II) Technical solution

[0022] In order to solve the above-mentioned technical problems, the present invention provides a quantum dot composition, which is a quantum dot composition obtained by dispersing quantum dots that emit fluorescence by excitation light in a resin composition, characterized in that the quantum dots have ligands coordinated to their surface and a surface coating layer that is bonded to the ligands and contains siloxane bonds, and the surface coating layer contains at least one of substituents possessed by a polymer contained in the resin composition, substituents that can be polymerized with the polymer contained in the resin composition, or compounds having the same skeleton structure as the polymer.

[0023] Such a quantum dot-containing composition maintains the characteristics of quantum dots while improving stability and compatibility with a high-polarity solvent and a photosensitive resin composition.

[0024] In addition, in the present invention, it is preferred that the quantum dots contain a quantum dot core, and the quantum dot core is selected from a group consisting of Group II-VI, Group III-V, Group IV, Group IV-VI, Group I-III-VI, Group II-IV-V and their mixed crystals or alloys, or a compound having a perovskite structure.

[0025] Such quantum dots can emit fluorescence by excitation light.

[0026] In this case, it is preferred that the quantum dot include a core-shell type quantum dot in which the quantum dot core is coated with a shell having a larger band gap than the quantum dot core.

[0027] Such quantum dots can emit stable light and are relatively easy to handle.

[0028] Furthermore, in the present invention, it is preferred that the ligand has any one or more of an amino group, a thiol group, a carboxyl group, a phosphino group, a phosphine oxide group, and an ammonium ion.

[0029] Such a ligand is preferred because it can be easily coordinated to the surface of the quantum dot.

[0030] Furthermore, in the present invention, it is preferred that the substituent possessed by the polymer contained in the resin composition is any one or more of a vinyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a phenolic hydroxyl group and an epoxy group.

[0031] With such a substituent, mixing can be performed under mild conditions without changing the surface structure of the quantum dot.

[0032] Furthermore, in the present invention, it is preferred that the substituent polymerizable with the polymer contained in the resin composition is any one or more of a vinyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a phenolic hydroxyl group and an epoxy group.

[0033] If it is such a substituent, the compatibility with the resin composition is improved, and mixing can be performed under mild conditions. In addition, during curing, the resin composition and the quantum dots can be polymerized, and aggregation can be suppressed by fixing the quantum dots to the resin composition.

[0034] In the present invention, the same skeleton structure as the polymer is preferably a skeleton structure derived from acrylic acid, methacrylic acid, acrylate, methacrylate, or a silphenylene skeleton, norbornene skeleton, fluorene skeleton, or isocyanurate skeleton.

[0035] With such a skeleton structure, the compatibility with the above-mentioned polymer is improved.

[0036] Furthermore, the present invention provides a wavelength conversion member, which is a cured product of the quantum dot-containing composition described above.

[0037] Such a wavelength conversion member can suppress degradation of the fluorescence emission efficiency under high temperature and high humidity conditions, and has high reliability.

[0038] In addition, the present invention provides a method for preparing a quantum dot-containing composition, which is a method for preparing the quantum dot-containing composition described above containing quantum dots that emit fluorescence by excitation light, comprising:

[0039] A ligand exchange step of mixing a solution in which the quantum dots are dispersed and a ligand having a substituent that forms a siloxane bond, so that the ligand is coordinated to the outermost surface of the quantum dots;

[0040] After the ligand exchange step, a surface coating layer forming step is performed by reacting the substituent forming a siloxane bond with a compound that reacts with the substituent forming a siloxane bond to form a polysiloxane to form a surface coating layer; and

[0041] After the surface coating layer forming step, a resin composition mixing step is performed in which the quantum dots coated with the surface coating layer are mixed with the resin composition.

[0042] According to such a method for preparing a quantum dot-containing composition, it is possible to prepare a quantum dot-containing composition that maintains the characteristics of quantum dots while improving stability and compatibility with a high-polarity solvent and a photosensitive resin composition.

[0043] (III) Beneficial effects

[0044] As described above, according to the quantum dot-containing composition of the present invention, it is possible to provide a quantum dot-containing composition which maintains the characteristics of quantum dots while improving stability and compatibility with a high-polarity solvent and a photosensitive resin composition. DETAILED DESCRIPTION

[0045] As described above, a quantum dot composition and a preparation method thereof are sought to be developed which maintains the characteristics of quantum dots while improving stability and compatibility with a high-polarity solvent and a photosensitive resin composition.

[0046] The inventors of the present application have repeatedly conducted in-depth research on the technical problems mentioned above, and it is found that by forming a surface coating layer containing siloxane, passivation is performed to improve stability. Further, in order to improve the compatibility with the resin composition, by introducing a compound having the same skeleton structure as the monomer or polymer of the resin composition into the surface coating layer, the compatibility can be improved, and further by introducing a substituent that can be polymerized with the polymer contained in the resin composition, it is possible to make quantum dots that can be cured even if added at high concentrations, and by introducing a substituent possessed by the polymer contained in the resin composition, the compatibility can be improved. As a result, it was found that even without a barrier film, in a reliability test at 85°C and 85%RH, the reduction rate of the internal quantum efficiency after 250 hours of treatment can be suppressed to within 10%, and stabilization can be achieved. In addition, the compatibility with the resin composition can be improved, and a uniform dispersion state in which no agglomerates are observed can be achieved.

[0047] That is, the present invention is a quantum dot composition, which is a quantum dot composition obtained by dispersing quantum dots that emit fluorescence by excitation light in a resin composition, wherein the quantum dots have ligands coordinated to their surface and a surface coating layer that is bonded to the ligands and contains siloxane bonds, and the surface coating layer contains at least one of substituents possessed by a polymer contained in the resin composition, substituents that can be polymerized with the polymer contained in the resin composition, or compounds having the same skeleton structure as the polymer.

[0048] Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.

[0049] The quantum dot-containing composition of the present invention is obtained by dispersing quantum dots in a resin composition, and comprises a ligand coordinated to the surface of the quantum dots and a surface coating layer bonded to the ligand and containing a siloxane bond.

[0050] (Quantum dot)

[0051] The quantum dots in the present invention are not particularly limited as long as they emit fluorescence by excitation light, and can be used in any form. Quantum dots are mainly nanoparticles below 10 nm, but can also be nanowires, nanorods, nanotubes, nanocubes, etc., and can be used in any shape.

[0052] The quantum dots used in the present invention can use any suitable material, for example, quantum dots containing a quantum dot core and the quantum dot core is selected from the group consisting of II-VI group, III-V group, IV group, IV-VI group, I-III-VI group, II-IV-V group and their mixed crystals or alloys, or compounds with a perovskite structure as semiconductor materials.

[0053] Specifically, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, Si, Ge, Sn, Pb, PbS, PbSe, PbTe, SnS, SnSe, SnTe, AgGaS 2 、AgInS 2 、AgGaSe 2 、AgInSe 2 、CuGaS 2 、CuGaSe 2 、CuInS 2 、CuInSe 2 、ZnSiP 2 、ZnGeP 2 、CdSiP 2 、CdGeP 2 、CsPbCl 3 、CsPbBr 3 , CsPbI 3 、CsSnCl 3 , CsSnBr 3 、CsSnI 3 , but is not limited thereto.

[0054] In addition, the quantum dots used in the present invention can be set to quantum dots with a core-shell structure. As a shell material capable of forming a core-shell structure, it is not particularly limited, but preferably a shell material with a band gap greater than the core material and a low lattice mismatch can be combined arbitrarily according to the core material. Specific shell materials can include ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, BeS, BeSe, BeTe, MgS, MgSe, MgTe, PbS, PbSe, PbTe, SnS, SnSe, SnTe, CuF, CuCl, CuBr, CuI, and the above materials can be selected singly or multiple mixed crystals can be selected, but are not limited thereto.

[0055] The quantum dot preferably includes a core-shell quantum dot in which a quantum dot core is coated with a shell having a larger band gap than the quantum dot core.

[0056] There are various methods for preparing quantum dots, such as liquid phase method and gas phase method, but there is no particular limitation in the present invention. From the perspective of showing high fluorescent luminescence efficiency, it is preferred to use: semiconductor nanoparticles obtained by thermal decomposition method (hot soap method) or hot injection method (hot injection method) in which precursor species are reacted at high temperature in a high boiling point non-polar solvent. In order to impart dispersibility in non-polar solvents and reduce surface defects, it is desired to have organic ligands coordinated on the surface.

[0057] From the perspective of dispersibility, the organic ligand preferably comprises an aliphatic hydrocarbon. As such an organic ligand, for example, oleic acid, stearic acid, palmitic acid, myristic acid, lauric acid, capric acid, caprylic acid, oleylamine, stearyl (octadecyl) amine, dodecyl (lauryl) amine, decylamine, octylamine, octadecyl mercaptan, hexadecyl mercaptan, tetradecyl mercaptan, dodecanethiol, decanethiol, octyl mercaptan, trioctyl phosphine, trioctyl phosphine oxide, triphenylphosphine, triphenylphosphine oxide, tributylphosphine, tributylphosphine oxide, etc. can be listed, and these organic ligands can be used alone or in combination.

[0058] (ligand coordinated to quantum dots)

[0059] In addition, the quantum dot in the present invention has a ligand coordinated to its surface. It is expected that the quantum dot in the present invention, in addition to being coordinated with the organic ligand, is also coordinated with a ligand having a substituent capable of forming a siloxane bond. As a ligand having a substituent capable of forming a siloxane bond, it is expected to have a substituent that interacts with the quantum dot surface or is adsorbed on the quantum dot surface. As a substituent that interacts with the quantum dot surface or is adsorbed on the quantum dot surface, amino, thiol, carboxyl, sulfhydryl, phosphino group, phosphine group, phosphine oxide group, sulfonyl, ammonium ion, quaternary ammonium salt, etc. can be listed, wherein, from the perspective of the intensity of coordination, amino, carboxyl, sulfhydryl, phosphino group, quaternary ammonium salt are preferred.

[0060] In addition, in the quantum dot composition of the present invention, it is desirable to coat the surface of the quantum dots with a polymer by polysiloxane. Therefore, for the above-mentioned quantum dots, it is desirable that the ligand having a substituent capable of coordinating to the surface of the quantum dots has a substituent capable of forming a siloxane bond. There are compounds containing alkoxysilanes such as trimethoxysilyl, triethoxysilyl, dimethoxymethylsilyl, diethoxymethylsilyl, dimethylmethoxysilyl, and ethoxydimethylsilyl as substituents capable of forming siloxane bonds; compounds having silazane bonds; compounds having Si-OH bonds; compounds having Si-X (X: halogen) bonds; carboxylic acids, etc., but it is preferred to use ligands containing alkoxysilanes or silazane, Si-OH, because the reaction can be carried out under mild conditions without producing acids as reaction by-products.

[0061] (Surface coating)

[0062] The quantum dot composition of the present invention has a surface coating layer, which is bonded to the ligand having the substituent capable of forming a siloxane bond and contains a siloxane bond. The quantum dot composition of the present invention is expected to coat the quantum dot surface with a polysiloxane polymer. Therefore, it is expected to form a quantum dot surface coating layer containing polysiloxane by reacting with the substituent capable of forming a siloxane bond contained in the above-mentioned ligand having a substituent capable of coordinating to the quantum dot.

[0063] In addition, the surface coating layer in the present invention has a substituent group possessed by the macromolecule included in the resin composition described later, a substituent group that can be polymerized with the macromolecule included in the resin composition described later, or a compound with the same skeleton structure as the macromolecule. It is expected that the substituent group possessed by the macromolecule, the substituent group that can be polymerized with the macromolecule, or the compound with the same skeleton structure as the macromolecule are included in the surface coating layer in the form of forming a covalent bond. When forming an association with the quantum dots coated on the surface, or containing in the form of being coordinated to the quantum dot surface or the surface coating layer, it is easy to fall off when carrying out subsequent purification operations, and desired characteristics cannot be brought into play.

[0064] In addition, as substituents that can be polymerized with polymers, vinyl, acryloyl, methacryloyl, hydroxyl, phenolic hydroxyl, epoxy, sulfonyl, carboxyl, thiol, etc. can be listed, but if strongly acidic substituents or substituents that are easily coordinated with quantum dots are introduced, aggregation is likely to occur, so vinyl, acryloyl, methacryloyl, hydroxyl, phenolic hydroxyl, and epoxy are preferred.

[0065] In addition, regarding compounds having the same skeleton structure as the polymer contained in the resin composition, examples include compounds having a skeleton structure derived from acrylic acid, methacrylic acid, acrylate, methacrylate, or a silylene skeleton, a norbornene skeleton, a fluorene skeleton, and an isocyanurate skeleton. The type, amount, and ratio of the introduced compounds can be appropriately adjusted in a manner such that agglomeration does not occur when the resin composition and the quantum dots are mixed.

[0066] (Resin composition)

[0067] The quantum dot composition of the present invention is a mixture of quantum dots and a resin composition. In addition to the polymer as the base polymer, the resin composition may also contain a polymerization initiator, and may further contain an organic solvent, a polymerizable crosslinking agent, a photoacid generator, an antioxidant, a light scattering agent, etc. The polymer can be appropriately used: a polymer derived from acrylic acid, methacrylic acid, acrylate, methacrylate, or a copolymer composed of multiple polymers; a polymer having (meth) acrylate glycidyl in a repeating unit; a polymer containing a siloxane skeleton, a carbamate skeleton, a silylene skeleton, a norbornene skeleton, a fluorene skeleton, and an isocyanurate skeleton. The polymer used can be appropriately selected according to the purpose. For example, acrylic resin, alkyd resin, melamine resin, epoxy resin, silicone resin, polyvinyl alcohol, polyvinyl pyrrolidone, polyamide, polyamide-imide, polyimide and other polyimide precursors and their esterification products, and the reaction product of tetracarboxylic dianhydride and diamine can be listed. In addition, a polymerizable substituent is introduced into the above-mentioned polymer, and it can be cured by using it in combination with a polymerization initiator. As a free radical polymerizable substituent, there are vinyl, acryloyl, methacryloyl, thiol, etc., which can all be appropriately utilized. As a cationic polymerizable substituent, hydroxyl, phenolic hydroxyl, epoxy, glycidyl, oxetanyl, isocyanate, etc. can be listed, which can all be appropriately utilized. In addition, in order to impart alkali developability, a carboxyl group can also be introduced.

[0068] (Polymerization initiator)

[0069] In addition, the quantum dot-containing composition of the present invention also preferably contains a polymerization initiator. The polymerization initiator includes a thermal polymerization initiator or a photopolymerization initiator, and both can be appropriately used according to the base polymer. As a photoradical polymerization initiator, in the Irgacure (registered trademark) series commercially available from BASF, for example, Irgacure 290, Irgacure 651, Irgacure 754, Irgacure 184, Irgacure 2959, Irgacure 907, Irgacure 369, Irgacure 379, Irgacure 819, Irgacure 1173, etc. can be listed. In addition, in the Darocure (registered trademark) series, for example, TPO, Darocure 1173, etc. can be listed. In addition, a known thermal radical polymerization initiator or a photocationic polymerization initiator may also be included.

[0070] The content of the polymerization initiator is preferably 0.1 to 10 parts by mass, more preferably 0.2 to 5 parts by mass, based on 100 parts by mass of the polymer added.

[0071] (Solvent)

[0072] In order to improve the coating properties of the quantum dot-containing composition of the present invention, a solvent may be included in the quantum dot-containing composition of the present invention. As the solvent, from the perspective of compatibility with quantum dots, organic solvents such as ketones, alkylene glycol ethers, alcohols and aromatic compounds are preferred. Acetone, methyl ethyl ketone, cyclohexanone and the like in the ketone group; methyl cellosolve (ethylene glycol monomethyl ether), butyl cellosolve (ethylene glycol monobutyl ether), methyl cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, ethylene glycol monopropyl ether, ethylene glycol monohexyl ether, ethylene glycol dimethyl ether, diethylene glycol ethyl ether, diethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol monomethyl ether, diethylene glycol acetate and diethyl acetate can be appropriately utilized. Alcohol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, diethylene glycol isopropyl ether, diethylene glycol butyl ether, diethylene glycol tert-butyl ether, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol propyl ether, triethylene glycol isopropyl ether, triethylene glycol butyl ether, triethylene glycol tert-butyl ether, etc.; methanol, ethanol, isopropanol, n-butanol, 3-methyl-3-methoxybutanol, etc. from the alcohol group; and benzene, toluene, and xylene from the aromatic solvent group.

[0073] Furthermore, in addition to the above, the quantum dot-containing composition of the present invention may also contain a polymerizable crosslinking agent, a photoacid generator, an antioxidant, a light scattering agent, etc., which can be appropriately adjusted according to the polymerizability or coating properties.

[0074] (Wavelength conversion member)

[0075] The wavelength conversion component of the present invention is a cured product obtained by curing the composition containing quantum dots. The form of the wavelength conversion component in the present invention is not particularly limited, and examples thereof include: a wavelength conversion film obtained by processing into a sheet and then curing it, thereby dispersing quantum dots in a resin; and a wavelength conversion color filter patterned by inkjet or resist material. The method for manufacturing the wavelength conversion material is not particularly limited, and for example, the wavelength conversion material can be obtained by applying the composition containing quantum dots to a transparent film or substrate material such as PET or polyimide and curing it, and then laminating it.

[0076] The transparent film can be coated by a spray method such as spray coating or ink jet coating, spin coating, or a bar coater.

[0077] The method for curing the quantum dot composition is not particularly limited, and can be performed, for example, by heating the film coated with the quantum dot composition at 60° C. for 2 hours and then at 150° C. for 4 hours. In addition, the quantum dot composition can be cured by photopolymerization, which can also be appropriately changed according to the application.

[0078] By introducing a substituent that can polymerize with a polymer in the resin composition into such a surface coating layer, a wavelength conversion member that has high reliability after curing and has no aggregation or curing inhibition can be produced.

[0079] (Method for preparing quantum dot-containing composition)

[0080] The present invention provides a method for preparing a quantum dot composition, which is a method for preparing the quantum dot composition described above containing quantum dots that emit fluorescence by excitation light, characterized in that it comprises:

[0081] A ligand exchange step of mixing a solution in which the quantum dots are dispersed and a ligand having a substituent that forms a siloxane bond, so that the ligand is coordinated to the outermost surface of the quantum dots;

[0082] After the ligand exchange step, a surface coating layer forming step is performed by reacting the substituent forming a siloxane bond with a compound that reacts with the substituent forming a siloxane bond to form a polysiloxane to form a surface coating layer; and

[0083] After the surface coating layer forming step, a resin composition mixing step is performed in which the quantum dots coated with the surface coating layer are mixed with the resin composition.

[0084] The quantum dot-containing composition of the present invention can be prepared, for example, by the following method.

[0085] First, quantum dots coordinated with ligands containing long-chain hydrocarbons are dispersed in a hydrophobic solvent, and ligands having substituents forming siloxane bonds and substituents coordinated to the surface of the quantum dots are mixed therein, thereby performing a ligand exchange reaction. The conditions of the ligand exchange reaction such as the amount of addition, heating temperature, time, and light exposure are appropriately changed according to the type of ligand.

[0086] Next, the substituent that forms a siloxane bond is reacted with a compound that reacts with the substituent that forms a siloxane bond to form a polysiloxane, thereby reacting with the quantum dots coordinated with a ligand having a substituent that can form a siloxane bond to form a polysiloxane, thereby forming a surface coating layer containing siloxane bonds.

[0087] Next, the quantum dots covered by the surface covering layer are mixed with the resin composition, thereby preparing a quantum dot composition.

[0088] As the conventional method forming polysiloxane bond, sol-gel method can be suitably utilized, but because quantum dot is weaker or weaker to moisture under acidic conditions, therefore the sol-gel method under preferred alkaline conditions, further preferably uses the non-hydrolysis sol-gel method of diphenylsilanediol or tetramethyl disiloxanediol etc. In addition, the surface coating layer in the present invention has at least one or more of the substituent group that the macromolecule included in the resin combination has, can be with the macromolecule polymerized substituent group included in the aforementioned resin combination or have the macromolecule included in the resin combination The same skeletal structure of the compound in the resin combination.Expect to form a covalent bond in the surface coating layer The mode and contain. There is no particular restriction on the method of forming a covalent bond, for example, the following method can be appropriately used: a substituent capable of forming a siloxane bond is introduced into a compound having the same skeleton structure as the polymer contained in the resin composition and added during the above-mentioned non-hydrolytic sol-gel reaction, thereby forming a covalent bond in the surface coating layer; a method of pre-introducing a substituent capable of polymerizing with the polymer contained in the resin composition during the above-mentioned non-hydrolytic sol-gel reaction, and then reacting it with the polymer or monomer, thereby introducing it into the surface coating layer. After the surface coating layer is formed, the unreacted product is removed by purification and mixed with the resin composition, thereby preparing a quantum dot composition. By forming a surface coating layer, a quantum dot composition can be prepared in which the compatibility with the resin composition is improved and the quantum dots are not condensed but uniformly dispersed.

[0089] Example

[0090] The present invention is further specifically described below using examples and comparative examples, but the present invention is not limited to these examples and comparative examples. In this example, InP / ZnSe / ZnS core-shell quantum dots are used as quantum dot materials.

[0091] [Example 1]

[0092] (Quantum dot nucleosynthesis process)

[0093] 0.23 g (0.9 mmol) of palmitic acid, 0.088 g (0.3 mmol) of indium acetate, and 10 mL of 1-octadecene were added to the flask, and heated and stirred at 100° C. under reduced pressure, and degassed for 1 hour while dissolving the raw materials. Then, nitrogen was purged into the flask, and 0.75 mL (0.15 mmol) of a 0.2 M solution prepared by mixing tri(trimethylsilyl)phosphine and trioctylphosphine was added, and the temperature was raised to 300° C. The solution was colored from yellow to red, and it was confirmed that core particles were generated.

[0094] (Quantum dot shell synthesis process)

[0095] Next, 2.85 g (4.5 mmol) of zinc stearate and 15 mL of 1-octadecene were added to another flask, and the mixture was heated and stirred at 100° C. under reduced pressure to dissolve the mixture. A 0.3 M zinc stearate octadecene solution that had been degassed for 1 hour was prepared, and 3.0 mL (0.9 mmol) of the solution was added to the reaction solution after the nucleus synthesis, and the mixture was cooled to 200° C. Next, 0.474 g (6.0 mmol) of selenium and 4.0 mL of trioctylphosphine were added to another flask, and the mixture was heated to 150° C. to dissolve the selenide solution of trioctylphosphine, and the reaction solution after the nucleus synthesis step that had been previously cooled to 200° C. was heated to 320° C. over 30 minutes, and the trioctylphosphine selenide solution was added in a manner of adding 0.1 mL each time, and adding a total of 0.6 mL (0.9 mmol). The mixture was kept at 320° C. for 10 minutes, and then cooled to room temperature. 0.44 g (2.2 mmol) of zinc acetate was added, and the mixture was heated and stirred at 100° C. under reduced pressure to dissolve the mixture. Nitrogen was purged into the flask again, and the temperature was raised to 230° C., and 0.98 mL (4.0 mmol) of 1-dodecanethiol was added and maintained for 1 hour. The obtained solution was cooled to room temperature to prepare a solution containing core-shell quantum dots.

[0096] (Ligand exchange step)

[0097] (3-mercaptopropyl) triethoxysilane (TOKYO CHEMICAL INDUSTRY CO., LTD.) was used as a ligand having a substituent capable of forming a siloxane bond and a substituent coordinated to the surface of the quantum dot. As a ligand exchange reaction, (3-mercaptopropyl) triethoxysilane (3.0 mmol) was added to the solution after the shell synthesis step cooled to room temperature and stirred for 24 hours. After the reaction was completed, ethanol was added to precipitate the reaction solution, centrifuged, and the supernatant was removed. The same purification was performed again and dispersed in toluene to prepare a quantum dot solution coordinated with a ligand and the ligand had a substituent capable of forming a siloxane bond.

[0098] (Surface coating layer forming step)

[0099] Into a flask that had been purged with nitrogen in advance, add triethoxyvinylsilane (4.0 mmol), diphenylsilanediol (6.0 mmol), barium hydroxide monohydrate (0.15 mmol) and the quantum dot toluene solution after the ligand exchange process, and heat and stir at 65°C for 24 hours. After the reaction is completed, cool to room temperature, add ethanol to precipitate the reaction solution, centrifuge and remove the supernatant. Disperse in toluene and add to a flask that has been purged with nitrogen in advance, and add 2 parts by mass of methacryloyl-modified silicone oil X-32-3817-3 (Shin-Etsu Chemical Co., Ltd.) to 100 parts by mass of the quantum dot toluene solution. After stirring, mixing and degassing, irradiate with a UVLED irradiation device for 20 seconds with a wavelength of 365 nm and an output power of 4000 mW / cm while stirring. 2 After the reaction, ethanol was added to precipitate the mixture, and the supernatant was removed after centrifugation, and the mixture was dispersed in toluene again.

[0100] (Resin composition mixing step)

[0101] The solution after the surface coating layer formation step dispersed in toluene and methacryloyl-modified silicone oil X-32-3817-3 (Shin-Etsu Chemical Co., Ltd.) were weighed and mixed so as to contain 20% by mass of quantum dots in terms of non-volatile component ratio. After mixing, 1 part by mass of thermal free radical generator AIBN (manufactured by TOKYO CHEMICAL INDUSTRY CO., LTD.) was added to 100 parts by mass of methacryloyl-modified silicone oil to obtain a quantum dot-containing composition.

[0102] (Method for manufacturing wavelength conversion member)

[0103] The obtained quantum dot composition was used to produce a wavelength conversion component. The quantum dot composition was vacuum degassed, and the quantum dot composition with a solid content concentration of 20% was injected into a 20 cm × 10 cm square and 500 μm thick mold coated with fluororesin. The composition was heated on a hot plate at 120°C for 1 hour to volatilize the solvent and thermally cure the quantum dot composition. The composition was then removed from the mold to produce a wavelength conversion component with a thickness of 100 μm.

[0104] (Measurement of emission wavelength, emission half-peak width, and luminous efficiency)

[0105] For the examples and comparative examples, the fluorescence characteristics of the quantum dot compositions were evaluated using a quantum efficiency measurement system (QE-2100) manufactured by OTSUKA ELECTRONICS CO., LTD. to measure the emission wavelength, fluorescence half-peak width, and fluorescence efficiency (internal quantum efficiency) of the quantum dots at an excitation wavelength of 450 nm.

[0106] (Reliability test)

[0107] The obtained wavelength conversion member was treated under the conditions of 85° C. and 85% RH (relative humidity) for 250 hours, and the fluorescence emission efficiency of the wavelength conversion member after the treatment was measured to evaluate its reliability.

[0108] [Comparative Example 1]

[0109] The steps up to the quantum dot shell synthesis step are implemented in the same manner as in Example 1, and the ligand exchange step and the surface coating layer formation step are not performed, and the resin composition mixing step is performed. The solution after the quantum dot shell synthesis step and the methacryloyl-modified silicone oil X-32-3817-3 (Shin-Etsu Chemical Co., Ltd.) are weighed in a manner that contains 20% by mass of quantum dots in terms of non-volatile component ratio, and the methacryloyl-modified silicone oil X-32-3817-3 (Shin-Etsu Chemical Co., Ltd.) is mixed into the solution after the quantum dot shell synthesis step. After mixing, the solvent is removed, and 1 part by mass of the thermal free radical generator AIBN (manufactured by TOKYO CHEMICAL INDUSTRY CO., LTD.) is added to 100 parts by mass of the added methacryloyl-modified silicone oil to obtain a quantum dot-containing composition. In addition, the wavelength conversion component is prepared in the same manner as in Example 1.

[0110] [Example 2]

[0111] The production was carried out in the same manner as in Example 1 up to the ligand exchange step.

[0112] (Surface coating layer forming step)

[0113] Into a flask that had been purged with nitrogen in advance, add 3-(triethoxysilyl)propyl methacrylate (4.0 mmol), diphenylsilanediol (6.0 mmol), barium hydroxide monohydrate (0.15 mmol) and the quantum dot toluene solution after the ligand exchange process, and heat and stir at 65°C for 24 hours. After the reaction is completed, cool to room temperature, add ethanol to precipitate the reaction solution, centrifuge and remove the supernatant. Dispersed in toluene, and added to a flask that had been purged with nitrogen in advance, add 2 parts by mass of acrylic resin RA-4101 (Negami Sangyo Co., Ltd.) to 100 parts by mass of the quantum dot toluene solution. Furthermore, add 1 part by mass of Irgacure 1173 to 100 parts by mass of acrylic resin, stir and mix, and irradiate with a UVLED irradiation device for 20 seconds at a wavelength of 365 nm and an output power of 4000 mW / cm 2 After the reaction, ethanol was added to precipitate the mixture, and the supernatant was removed after centrifugation, and the mixture was dispersed in toluene again.

[0114] (Resin composition mixing step)

[0115] The solution after the surface coating layer formation step dispersed in toluene and acrylic resin RA-4101 (Negami Industry Co., Ltd.) were weighed and mixed in such a manner that the non-volatile component ratio contained 20% by mass of quantum dots, and 1 part by mass of thermal free radical generator AIBN (manufactured by TOKYO CHEMICAL INDUSTRY CO., LTD.) was added to 100 parts by mass of the non-volatile component of the acrylic resin. After mixing, the toluene solvent was removed by reduced pressure distillation to obtain a quantum dot-containing composition.

[0116] (Method for manufacturing wavelength conversion member)

[0117] The obtained quantum dot composition was used to produce a wavelength conversion component. The quantum dot composition was vacuum degassed, and the quantum dot composition with a solid content concentration of 20% was injected into a 20 cm × 10 cm square and 500 μm thick mold coated with fluororesin. The composition was heated on a hot plate at 120°C for 1 hour to volatilize the solvent and thermally cure the quantum dot composition. The composition was then removed from the mold to produce a wavelength conversion component with a thickness of 100 μm.

[0118] [Comparative Example 2]

[0119] The steps up to the quantum dot shell synthesis step were produced in the same manner as in Example 1, and the wavelength conversion component was produced in the same manner as in Example 2 except for the ligand exchange step and the surface coating layer formation step.

[0120] [Example 3]

[0121] The production was carried out in the same manner as in Example 1 up to the ligand exchange step.

[0122] (Surface coating layer forming step)

[0123] Into a flask that had been purged with nitrogen in advance, add 3-(triethoxysilyl)propyl methacrylate (4.0 mmol), diphenylsilanediol (6.0 mmol), barium hydroxide monohydrate (0.15 mmol) and the quantum dot toluene solution after the ligand exchange process, and heat and stir at 65°C for 24 hours. After the reaction is completed, cool to room temperature, add ethanol to precipitate the reaction solution, centrifuge and remove the supernatant. Dispersed in toluene, and added to a flask that had been purged with nitrogen in advance, add 2 parts by mass of the isocyanuric acid derivative DA-MGIC (SHIKOKU CHEMICALS CORPORATION) to 100 parts by mass of the quantum dot toluene solution. Furthermore, add 1 part by mass of Irgacure 1173 to 100 parts by mass of DA-MGIC, stir and mix, and irradiate with a UVLED irradiation device for 20 seconds at a wavelength of 365 nm and an output power of 4000 mW / cm 2 After the reaction, ethanol was added to precipitate the mixture, and the supernatant was removed after centrifugation, and the mixture was dispersed in toluene again.

[0124] (Resin composition mixing step)

[0125] An epoxy-containing silicone resin (manufactured by Shin-Etsu Chemical Co., Ltd., CAS No. 2253674-54-1) and a solution dispersed in toluene after the surface coating layer formation step were weighed and mixed so as to contain 20% by mass of quantum dots in terms of non-volatile component ratio. 2 parts by mass of a thermal acid generator TA-100 (manufactured by San-Apro Ltd.) and 20 parts by mass of a crosslinking agent THI-DE were weighed and mixed with respect to 100 parts by mass of the non-volatile component of the silicone resin. After mixing, the toluene solvent was removed by reduced pressure distillation to obtain a quantum dot-containing composition.

[0126] (Method for manufacturing wavelength conversion member)

[0127] The obtained quantum dot composition was used to produce a wavelength conversion component. The quantum dot composition was vacuum degassed, and the quantum dot composition with a solid content concentration of 20% was injected into a 20 cm × 10 cm square and 500 μm thick mold coated with fluororesin. The composition was heated on a hot plate at 120°C for 1 hour to volatilize the solvent and thermally cure the quantum dot composition. The composition was then removed from the mold to produce a wavelength conversion component with a thickness of 100 μm.

[0128] [Comparative Example 3]

[0129] The steps up to the quantum dot shell synthesis step were produced in the same manner as in Example 1, and the wavelength conversion component was produced in the same manner as in Example 3 except for the ligand exchange step and the surface coating layer formation step.

[0130] [Example 4]

[0131] The production was carried out in the same manner as in Example 1 up to the ligand exchange step.

[0132] (Surface coating layer forming step)

[0133] Into a flask that had been purged with nitrogen in advance, add 3-(triethoxysilyl)propyl methacrylate (4.0 mmol), diphenylsilanediol (6.0 mmol), barium hydroxide monohydrate (0.15 mmol) and the quantum dot toluene solution after the ligand exchange process, and heat and stir at 65°C for 24 hours. After the reaction is completed, cool to room temperature, add ethanol to precipitate the reaction solution, centrifuge and remove the supernatant. Dispersed in toluene, and added to a flask that had been purged with nitrogen in advance, add 2 parts by mass of a phenol-reactive compound (phenol-reactive compound) BIOAP-FL (ASAHI YUKIZAI CORPORATION) having a fluorene skeleton to 100 parts by mass of the quantum dot toluene solution. Furthermore, add 1 part by mass of Irgacure 1173 to 100 parts by mass of BIOAP-FL, stir and mix, and irradiate with a UVLED irradiation device for 20 seconds at a wavelength of 365 nm and an output power of 4000 mW / cm 2 After the reaction, ethanol was added to precipitate the mixture, and the supernatant was removed after centrifugation, and the mixture was dispersed in toluene again.

[0134] (Resin composition mixing step)

[0135] A phenolic crosslinking silicone resin (manufactured by Shin-Etsu Chemical Co., Ltd., CAS No. 916059-41-1) and a solution dispersed in toluene after the surface coating layer formation step were weighed and mixed so as to contain 20% by mass of quantum dots in terms of non-volatile component ratio. 2 parts by mass of a thermal acid generator TA-100 (manufactured by San-Apro Ltd.) and 20 parts by mass of a crosslinking agent THI-DE were weighed and mixed with respect to 100 parts by mass of the non-volatile component of the silicone resin. After mixing, the toluene solvent was removed by reduced pressure distillation to obtain a quantum dot-containing composition.

[0136] (Method for manufacturing wavelength conversion member)

[0137] The obtained quantum dot composition was used to produce a wavelength conversion component. The quantum dot composition was vacuum degassed, and the quantum dot composition with a solid content concentration of 20% was injected into a 20 cm × 10 cm square and 500 μm thick mold coated with fluororesin. The composition was heated on a hot plate at 120°C for 1 hour to volatilize the solvent and thermally cure the quantum dot composition. The composition was then removed from the mold to produce a wavelength conversion component with a thickness of 100 μm.

[0138] [Comparative Example 4]

[0139] The steps up to the quantum dot shell synthesis step were prepared in the same manner as in Example 1, and the wavelength conversion component was manufactured in the same manner as in Example 4 except for the ligand exchange step and the surface coating layer formation step.

[0140] Table 1 shows the comparison results between Examples 1 to 4 and Comparative Examples 1 to 4.

[0141] [Table 1]

[0142]

[0143] The values ​​of the fluorescence luminescence efficiency after curing of the resin composition and the fluorescence luminescence efficiency after reliability evaluation are shown. According to the results of Table 1, compared with the embodiments, the quantum yield of the comparative example is reduced, and the emission wavelength shifts more toward the long wavelength side. When observed under a microscope, a large number of agglomerates of about 1 to 50 μm were observed in Comparative Examples 1 to 4, resulting in a decrease in quantum yield. On the other hand, the agglomerates of the embodiments are small and few in number, so it is believed that the reduction in quantum yield is suppressed. It can be seen that the embodiments can introduce a larger steric hindrance through the coating of silicone or resin, and the agglomeration is effectively suppressed. Compared with the results of the reliability test (85°C, 85% RH, 250 hours of treatment), it can be seen that the stability of the embodiments is improved compared with the comparative examples, and the reduction in quantum yield is suppressed.

[0144] As described above, it was confirmed that the quantum dot composition of the present invention exhibits high stability, and the wavelength conversion member using the quantum dot composition has suppressed degradation of the fluorescence emission efficiency under high temperature and high humidity conditions and has high reliability.

[0145] This manual contains the following protocols.

[0146] [1]: A quantum dot composition, wherein quantum dots that emit fluorescence by excitation light are dispersed in a resin composition, wherein the quantum dots have ligands coordinated to their surface and a surface coating layer that is bonded to the ligands and contains siloxane bonds, and the surface coating layer contains at least one of a substituent possessed by a polymer contained in the resin composition, a substituent that can polymerize with the polymer contained in the resin composition, or a compound having the same skeleton structure as the polymer.

[0147] [2]: The quantum dot composition according to the above [1] is characterized in that the quantum dots contain quantum dot cores, and the quantum dot cores are selected from the group consisting of II-VI group, III-V group, IV group, IV-VI group, I-III-VI group, II-IV-V group and their mixed crystals or alloys, or compounds with a perovskite structure.

[0148] [3]: The quantum dot composition according to [2] above is characterized in that the quantum dots contain core-shell quantum dots in which the quantum dot core is coated with a shell having a band gap larger than that of the quantum dot core.

[0149] [4]: The quantum dot composition according to [1], [2] or [3] above, characterized in that the ligand has any one or more of an amino group, a thiol group, a carboxyl group, a phosphino group, a phosphine oxide group and an ammonium ion.

[0150] [5]: A quantum dot composition according to [1], [2], [3] or [4], characterized in that the substituents possessed by the polymer contained in the resin composition are any one or more of vinyl, acryloyl, methacryloyl, hydroxyl, phenolic hydroxyl and epoxy groups.

[0151] [6]: The quantum dot composition according to [1], [2], [3], [4] or [5] above, characterized in that the substituent capable of polymerizing with the polymer contained in the resin composition is any one or more of a vinyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a phenolic hydroxyl group and an epoxy group.

[0152] [7]: The quantum dot composition according to [1], [2], [3], [4], [5] or [6] is characterized in that the skeleton structure identical to that of the polymer is a skeleton structure derived from acrylic acid, methacrylic acid, acrylate, methacrylate, or a silylene skeleton, norbornene skeleton, fluorene skeleton or isocyanurate skeleton.

[0153] [8]: A wavelength conversion component, characterized in that it is a cured product of the quantum dot-containing composition described in [1], [2], [3], [4], [5], [6] or [7].

[0154] [9]: A method for preparing a quantum dot composition, which is a method for preparing a quantum dot composition according to [1], [2], [3], [4], [5], [6] or [7] containing quantum dots that emit fluorescence by excitation light, characterized in that it comprises:

[0155] A ligand exchange step of mixing a solution in which the quantum dots are dispersed and a ligand having a substituent that forms a siloxane bond, so that the ligand is coordinated to the outermost surface of the quantum dots;

[0156] After the ligand exchange step, a surface coating layer forming step is performed by reacting the substituent forming a siloxane bond with a compound that reacts with the substituent forming a siloxane bond to form a polysiloxane to form a surface coating layer; and

[0157] After the surface coating layer forming step, a resin composition mixing step is performed in which the quantum dots coated with the surface coating layer are mixed with the resin composition.

[0158] In addition, the present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are only examples, and technical solutions having substantially the same structure and exerting the same technical effects as the technical concept described in the claims of the present invention are all included in the protection scope of the present invention.

Claims

1. A quantum dot-containing composition, wherein quantum dots that emit fluorescence by excitation light are dispersed in a resin composition, wherein: The quantum dots have a ligand coordinated on their surface and a surface coating layer bonded to the ligand and containing a siloxane bond, and the surface coating layer contains at least one of a substituent possessed by a polymer contained in the resin composition, a substituent capable of polymerizing with the polymer contained in the resin composition, or a compound having the same skeleton structure as the polymer.

2. The quantum dot composition according to claim 1, characterized in that: The quantum dots contain a quantum dot core, and the quantum dot core is selected from the group consisting of II-VI group, III-V group, IV group, IV-VI group, I-III-VI group, II-IV-V group and their mixed crystals or alloys, or a compound with a perovskite structure.

3. The quantum dot composition according to claim 2, characterized in that: The quantum dots include core-shell quantum dots in which a quantum dot core is coated with a shell having a band gap larger than that of the quantum dot core.

4. The quantum dot-containing composition according to any one of claims 1 to 3, characterized in that: The ligand has any one or more of an amino group, a thiol group, a carboxyl group, a phosphine group, a phosphine oxide group, and an ammonium ion.

5. The quantum dot-containing composition according to any one of claims 1 to 4, characterized in that: The substituents of the polymer contained in the resin composition are any one or more of vinyl, acryloyl, methacryloyl, hydroxyl, phenolic hydroxyl and epoxy groups.

6. The quantum dot-containing composition according to any one of claims 1 to 5, characterized in that: The substituent group polymerizable with the polymer contained in the resin composition is any one or more of a vinyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a phenolic hydroxyl group and an epoxy group.

7. The quantum dot-containing composition according to any one of claims 1 to 6, characterized in that: The same skeleton structure as the polymer is a skeleton structure derived from acrylic acid, methacrylic acid, acrylate, methacrylate, or a silphenylene skeleton, a norbornene skeleton, a fluorene skeleton, or an isocyanurate skeleton.

8. A wavelength conversion component, characterized in that: This is a cured product of the quantum dot-containing composition according to any one of claims 1 to 7.

9. A method for preparing a quantum dot-containing composition, which is a method for preparing a quantum dot-containing composition according to any one of claims 1 to 7 containing quantum dots that emit fluorescence by excitation light, characterized in that: It contains: A ligand exchange step of mixing a solution in which the quantum dots are dispersed and a ligand having a substituent that forms a siloxane bond, so that the ligand is coordinated to the outermost surface of the quantum dots; After the ligand exchange step, a surface coating layer forming step is performed by reacting the substituent forming a siloxane bond with a compound that reacts with the substituent forming a siloxane bond to form a polysiloxane to form a surface coating layer; and After the surface coating layer forming step, a resin composition mixing step is performed in which the quantum dots coated with the surface coating layer are mixed with the resin composition.

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