High-conductivity shunting pipeline framework

Abstract

An exemplary semiconductor processing system may include a cap plate and a gas separator. The gas separator may be disposed on the cover plate. The gas separator may include a top surface and a plurality of side surfaces. The gas separator may define: a gas inlet; a gas outlet; a gas chamber extending between the gas inlet and the gas outlet and fluidly coupling the gas inlet and the gas outlet; and a first split-flow chamber fluidly coupled with the gas chamber and directing gas out of the process chamber through a split-flow outlet. A semiconductor processing system may include a first shunt weldment. A first split weldment may extend from and be fluidly coupled with the split outlet. The first split weldment may include a first split weldment outlet and a second split weldment outlet.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. Patent Application No. 17 / 880,885, filed on August 4, 2022, entitled “HIGH CONDUCTANCE DIVERT LINE ARCHITECTURE,” which is incorporated herein by reference in its entirety. Technical Field

[0002] The present technology is related to semiconductor processes and equipment. More specifically, the present technology is related to semiconductor processing systems and components. Background Art

[0003] Semiconductor processing systems often integrate multiple process chambers together using cluster tools. This configuration can facilitate the performance of multiple sequential processing operations without removing the substrate from a controlled processing environment, or it can allow similar processes to be performed on multiple substrates simultaneously in different chambers. These chambers can include, for example, degassing chambers, pretreatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etching chambers, metrology chambers, and other chambers. The combination of chambers in a cluster tool, as well as the operating conditions and parameters used to run these chambers, are selected to manufacture specific structures using specific process recipes and process flows.

[0004] Processing operations often require careful control of the flow of process gases to ensure that deposition rates and film uniformity across the wafer meet desired specifications. To help control this flow rate, some processing operations may involve diverting some or all of the process gas from the processing chamber to adjust the gas flow into the chamber. However, this diversion process may cause fluid pressure issues and / or condensation of the process gas within the diverted line.

[0005] Therefore, there is a need for improved systems and methods that can be used to efficiently divert process gases within a semiconductor processing system. The present technology addresses these and other needs. Summary of the invention

[0006] An exemplary semiconductor processing system may include a plurality of processing chambers. Each processing chamber may define a processing area. The system may include a cover plate positioned above the plurality of processing chambers. The system may include a gas separator disposed on the cover plate. The gas separator may include a top surface and a plurality of side surfaces. The gas separator may define one or more gas inlets. The gas separator may define one or more gas outlets. The gas separator may define: one or more gas cavities extending between the one or more gas inlets and each of the one or more gas outlets, and fluidly coupling the one or more gas inlets to each of the one or more gas outlets. The gas separator may define: a diverter cavity, the diverter cavity being fluidly coupled to the one or more gas cavities, and directing gas from one of the plurality of processing chambers through a diverter outlet. The system may include a first diverter weldment extending from the diverter outlet and being fluidly coupled to the diverter outlet. The first diverter weldment may include a first diverter weldment outlet and a second diverter weldment outlet.

[0007] In some embodiments, the system may include a second shunt weldment having a second shunt weldment inlet and a third shunt weldment inlet. The second shunt weldment inlet may be in fluid communication with the first shunt weldment outlet fluid. The third shunt weldment inlet may be in fluid communication with the second shunt weldment outlet fluid. The system may include a first valve, the first valve coupling the second shunt weldment inlet with the first shunt weldment outlet. The system may include a second valve, the second valve coupling the third shunt weldment inlet with the second shunt weldment outlet. The system may include a first shunt weldment filter disposed upstream of the first valve. The system may include a second shunt weldment filter disposed upstream of the second valve. The first shunt weldment may be in fluid communication with the front-stage pipeline. The system may include between one and five heater sleeves surrounding the first shunt weldment.

[0008] Some embodiments of the present invention may cover a semiconductor processing system including a cover plate. The system may include a gas separator disposed on the cover plate. The gas separator may include a top surface and a plurality of side surfaces. The gas separator may define a gas inlet. The gas separator may define a gas outlet. The gas separator may define a gas cavity extending between the gas inlet and the gas outlet and fluidically coupling the gas inlet with the gas outlet. The gas separator may define a first shunt cavity, the first shunt cavity being fluidically coupled to the gas cavity and directing gas from the processing chamber through the shunt outlet. The system may include a first shunt weldment extending from the shunt outlet and being fluidically coupled to the shunt outlet. The first shunt weldment may include a first shunt weldment outlet and a second shunt weldment outlet.

[0009] In some embodiments, the system may include a fore-stage pipeline in fluid communication with the first shunt weldment. The system may include a second shunt weldment having a second shunt weldment inlet, a third shunt weldment inlet, and a third shunt weldment outlet. The second shunt weldment inlet may be coupled to the first shunt weldment outlet. The third shunt weldment inlet may be coupled to the second shunt weldment outlet. The third shunt weldment outlet may be coupled to the fore-stage pipeline. The system may include a first valve, the first valve coupling the second shunt weldment inlet to the first shunt weldment outlet. The system may include a second valve, the second valve coupling the third shunt weldment inlet to the second shunt weldment outlet. The first valve and the second valve may have a valve flow coefficient greater than or about 0.3 to less than or about 0.9. The gas chamber and the shunt chamber may be coupled via at least one valve fluid. The system may include a valve block coupled to at least one valve. The valve block may be coupled to a gas separator. The first shunt weldment may have an inner diameter greater than or about 5.0 mm to less than or about 20.0 mm. The system may include between one and five heater sleeves surrounding the first shunt weldment.

[0010] Some embodiments of the present invention may cover semiconductor processing methods. The method may include the following steps: introducing gas into a gas chamber via a gas inlet end of the gas chamber defined by a gas separator. The method may include the following steps: directing a diverted portion of the gas into a diverted chamber fluidically coupled to the gas chamber. The method may include the following steps: causing the diverted portion of the gas to flow through the diverted chamber and into a diverted weldment. The method may include the following steps: dividing the flow of the diverted portion of the gas into a first diverted portion and a second diverted portion through a first diverted weldment outlet and a second diverted weldment outlet.

[0011] In some embodiments, the method may include the steps of passing a first split portion of the gas through a first filter and a first valve. The method may include the steps of passing a second split portion of the gas through a second filter and a second valve. The method may include the steps of recombining the first split portion of the gas and the second split portion of the gas after passing the first split portion of the gas and the second split portion of the gas through the first filter and the second filter. The method may include the steps of transferring the recombined first split portion of the gas and the second split portion of the gas to the foreline. The pressure in the split weldment may be less than or about 150 Torr.

[0012] Such techniques may provide many benefits over conventional systems and techniques. For example, the processing system may provide multi-substrate processing capabilities that may far exceed conventional designs. In addition, the processing system may provide equal flow distribution between multiple chambers without reducing deposition rates. Embodiments may also reduce gas stabilization time before the gas flows to the chamber. The processing system may also provide the ability to adjust the deposition rate using a bypass path while accommodating higher process gas flow rates. These and other embodiments, as well as many of their advantages and features, will be described in more detail in conjunction with the following description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remainder of the specification and the accompanying drawings.

[0014] Figure 1 A schematic top plan view of an exemplary processing system is shown in accordance with some embodiments of the present technology.

[0015] Figure 2 A schematic isometric view of a transfer region of an exemplary chamber system according to some embodiments of the present technology is shown.

[0016] Figure 3 A schematic isometric view of a transfer region of an exemplary chamber system according to some embodiments of the present technology is shown.

[0017] Figure 4 A schematic isometric view of a transfer region of an exemplary chamber system according to some embodiments of the present technology is shown.

[0018] Figure 5 A schematic partial isometric view of a chamber system according to some embodiments of the present technology is shown.

[0019] Figure 6 A schematic top plan view of an exemplary processing system is shown in accordance with some embodiments of the present technology.

[0020] Figure 7 A schematic top plan view of an exemplary gas separator is shown in accordance with some embodiments of the present technology.

[0021] Figure 8 A schematic isometric view of an exemplary valve block is shown in accordance with some embodiments of the present technology.

[0022] Fig. 9 A schematic top plan view of an exemplary interface between a gas separator and a plurality of valve blocks is shown according to some embodiments of the present technology.

[0023] Fig. 10AA schematic isometric view of an exemplary choke plate in accordance with some embodiments of the present technology is shown.

[0024] Fig. 10B A schematic cross-sectional top plan view of an exemplary choke plate is shown in accordance with some embodiments of the present technology.

[0025] Fig.11 A schematic isometric view of an exemplary flow splitting architecture is shown in accordance with some embodiments of the present technology.

[0026] Fig.12 Operations of an exemplary semiconductor processing method according to some embodiments of the present technology are shown.

[0027] Several of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes and should not be considered to be to scale or proportion unless specifically stated to be to scale or proportion. Furthermore, as schematic diagrams, the drawings are provided to aid understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0028] In the accompanying drawings, similar components and / or features may have the same reference numeral. Further, various components of the same type may be distinguished by following the reference numeral with a letter that distinguishes between similar components. If only the first reference numeral is used in this specification, the description is applicable to any of the similar components having the same first reference numeral, regardless of the letter. DETAILED DESCRIPTION

[0029] Substrate processing may include time-intensive operations to add, remove, or otherwise modify materials on a wafer or semiconductor substrate. Efficient movement of substrates can reduce queue time and increase substrate throughput. To increase the number of substrates processed within a cluster tool, additional chambers may be incorporated into the host. Although transfer robots and processing chambers can be continuously added by lengthening the tool, this may become inefficient as the footprint of the cluster tool expands. Therefore, the present technology may include cluster tools with a higher number of processing chambers within a limited footprint. In order to accommodate the limited footprint around the transfer robot, the present technology may increase the number of processing chambers laterally outside the robot. For example, some conventional cluster tools may include one or two processing chambers that are positioned around the sections of a centrally located transfer robot to maximize the number of processing chambers radially around the robot. The present technology can build on this concept by incorporating additional chambers laterally outside as another row of chambers or another group of chambers. For example, the present technology can be applied to cluster tools including three, four, five, six or more processing chambers that can be accessed at each of one or more robot access locations.

[0030] A process gas may be supplied to multiple processing chambers from a single source, wherein the gas flow is evenly divided into separate gas flows for each processing chamber. The processing system may include a flow splitter architecture that may be used to help adjust the process gas flow. As just one example, the process gas may be split away from the processing chamber while the flow rate of the process gas is ramped up to full flow rate to ensure that only full flow rate is delivered to the chamber. However, as additional process locations are added, higher flow rates are required to maintain the appropriate flow rate of the process gas to each chamber to achieve the desired deposition rate. The maximum flow rate may be limited by the flow splitter architecture, which may cause the pressure in the splitter conduit to accumulate to an excessive level. This may cause pressure spikes and / or choking of the flow path. In addition, during actuation of the valve, when the valve coupled to the splitter conduit is suddenly opened or closed, the high pressure may cause condensation of the process gas in the splitter conduit due to the high instantaneous pressure difference. Condensation may cause residue accumulation and may change the flow characteristics of the splitter conduit.

[0031] The present technology can overcome these problems by incorporating a splitter weldment that separates the split process gas into multiple outlets, which can reduce the pressure in the split conduit. The system can include a passive flow control device, such as a choke orifice, which can ensure that the flow from the gas source is equal between each chamber. Reducing the pressure in the splitter weldment can enable the orifice size in the upstream flow path to be increased. The larger orifice size can allow a higher flow rate of process gas to flow into the processing chamber, which can result in an increased deposition rate.

[0032] Although the remainder of the disclosure will routinely identify specific structures, such as a four-position chamber system, that the present structures and methods may employ, it will be readily appreciated that the present systems and methods are equally applicable to any number of structures and devices that may benefit from the capabilities of the explained structures. Thus, the present technology should not be considered limited to use with only any specific structure. Furthermore, although an exemplary tool system will be described to provide a basis for the present technology, it should be appreciated that the present technology may be incorporated with any number of semiconductor processing chambers and tools that may benefit from some or all of the operations and systems to be described.

[0033] Figure 1 A top plan view of one embodiment of a semiconductor processing tool or processing system 100 showing deposition, etching, baking and curing chambers according to some embodiments of the present technology is shown. In the figure, a set of front-opening standard bays 102 supply substrates of various sizes, which are received by robots 104a and 104b within a factory interface 103 and placed into a load lock or low pressure holding area 106 and then transported to one of the substrate processing areas 108, which are located in chamber systems or quad sections 109a-c, which can each be a semiconductor processing system with a transfer area fluidically coupled to multiple processing areas 108. Although a quad system is shown, it should be understood that the present technology also encompasses platforms incorporating independent chambers, dual chambers, and other multi-chamber systems. A second robot 110 housed in a transfer chamber 112 may be used to transport substrate wafers from the holding area 106 to the quaternary section 109 and back, and the second robot 110 may be housed in the transfer chamber to which each of the quaternary sections or processing systems may be connected. Each substrate processing area 108 may be equipped to perform a variety of semiconductor processing operations, including any number of deposition processes, including cyclical layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processes.

[0034] Each quaternary section 109 may include a transfer area that can receive a substrate from a second robotic arm 110 and deliver the substrate to the second robotic arm 110. The transfer area of ​​the chamber system may be aligned with a transfer chamber having a second robotic arm 110. In some embodiments, the robot may enter and exit the transfer area laterally. In subsequent operations, components of the transfer section may translate the substrate vertically into an overlying processing area 108. Similarly, the transfer area may also be used to rotate the substrate between positions within each transfer area. The substrate processing area 108 may include any number of system components for depositing, annealing, curing and / or etching a film of material on a substrate or wafer. In one configuration, two groups of processing areas (such as the processing areas in quaternary sections 109a and 109b) may be used to deposit material on a substrate, while a third group of processing chambers (such as the processing chambers or areas in quaternary section 109c) may be used to cure, anneal or process the deposited film. In another configuration, all three groups of chambers (such as all twelve chambers shown) may be configured to deposit and / or cure films on a substrate.

[0035] As shown, the second robot 110 may include two arms for simultaneously transporting and / or retrieving multiple substrates. For example, each quad section 109 may include two entrances and exits 107 along the surface of the transfer area housing, which can be aligned laterally with the second robot. The entrance and exit can be defined along the surface near the transfer chamber 112. In some embodiments (such as the embodiment shown), the first entrance and exit can be aligned with the first substrate support of the multiple substrate supports of the quad section. In addition, the second entrance and exit can be aligned with the second substrate support of the multiple substrate supports of the quad section. The first substrate support can be adjacent to the second substrate support, and in some embodiments, the two substrate supports can define a first row of substrate supports. As shown in the illustrated configuration, the second row of substrate supports can be positioned behind the first row of substrate supports on the lateral outside of the transfer chamber 112. The two arms of the second robot 110 can be spaced apart to allow the two arms to enter the quad section or chamber system at the same time to transport or retrieve one or two substrates to the substrate supports in the transfer area.

[0036] Any one or more of the transfer areas described may be combined with additional chambers separate from the manufacturing system as shown in the different embodiments. It will be appreciated that the processing system 100 allows for other configurations of deposition, etching, annealing, and curing chambers for material films. In addition, the present technology may also be utilized with any number of other processing systems that may be combined with a transfer system for performing any of a particular operation, such as substrate movement. In some embodiments, the processing system may provide access to multiple processing chamber areas while maintaining a vacuum environment in various sections, such as the holding area and transfer area indicated, which may allow operations to be performed in multiple chambers while maintaining a particular vacuum environment between discrete processes.

[0037] As noted, the processing system 100, or more specifically, a quad section or chamber system in conjunction with the processing system 100 or other processing systems, may include a transfer section positioned below the illustrated processing chamber area. Figure 2 A schematic isometric view of a transport section of an exemplary chamber system 200 is shown in accordance with some embodiments of the present technology. Figure 2 Other aspects or variations of the above transfer regions may be described and may include any of the components or features described. The illustrated system may include a transfer region housing 205 defining a transfer region, which may include a plurality of components, such as a chamber body, as discussed further below. The transfer region may additionally include a process chamber or process region (such as a process chamber) that is fluidically coupled to the transfer region. Figure 1 The transfer area housing 205 may be at least partially defined from above by a processing chamber area 108 (shown as a quaternary section 109 of the transfer area housing). The sidewalls of the transfer area housing may define one or more access locations 207 through which substrates may be delivered and retrieved (such as by the second robot 110 as described above). The access location 207 may be a slit valve or other sealable access location, which in some embodiments includes a door or other sealing mechanism to provide an airtight environment within the transfer area housing 205. Although two such access locations 207 are illustrated, it should be understood that in some embodiments, only a single access location 207 may be included, as well as access locations located on multiple sides of the transfer area housing. It should also be understood that the transfer section shown may be sized to accommodate any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller substrates, including substrates characterized by any number of geometries or shapes.

[0038] Within the transfer area housing 205, there may be a plurality of substrate supports 210 positioned around the transfer area volume. Although four substrate supports are illustrated, it should be understood that embodiments of the present technology also encompass any number of substrate supports. For example, greater than or about three, four, five, six, eight or more substrate supports 210 may be accommodated in the transfer area according to embodiments of the present technology. The second robotic arm 110 may deliver a substrate to either or both of the substrate supports 210a or 210b through the access port 207. Similarly, the second robotic arm 110 may retrieve the substrate from these locations. Lifting rods 212 may protrude from the substrate support 210 and may allow a robot to access the substrate below. The lifting rods may be fixed to the substrate support, or fixed at a position where the substrate support may be recessed below, or in some embodiments, the lifting rods may be additionally raised or lowered through the substrate support. The substrate support 210 may translate vertically, and in some embodiments may extend upward to a processing chamber area of ​​a semiconductor processing system positioned above the transfer area housing 205, such as the processing chamber area 108.

[0039] The transfer area housing 205 may provide an access 215 for an alignment system, which may include an aligner, which may extend through a hole in the transfer area housing as shown, and may operate in conjunction with a laser, camera, or other monitoring device that protrudes or transmits through an adjacent hole, and may determine whether a substrate being translated is properly aligned. The transfer area housing 205 may also include a transfer device 220, which may operate in a variety of ways to position and move substrates between various substrate supports. In one example, the transfer device 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, which may allow additional substrates to be delivered to the transfer chamber. Additional transfer operations may include rotating substrates between substrate supports for additional processing in an overlying processing area.

[0040] The transport device 220 may include a central hub 225, which may include one or more shafts extending into the transport chamber. Coupled to the shafts may be an end effector 235. The end effector 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although the arms are illustrated as extending from the central body of the end effector, in various embodiments, the end effector may additionally include separate arms each coupled to the shaft or central hub. In embodiments of the present technology, any number of arms may be included. In some embodiments, the number of arms 237 may be similar or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transport device 220 may include four arms extending from the end effector. The arms may be characterized by any number of shapes and profiles, such as a straight profile or an arcuate profile, and include any number of remote profiles, including hooks, loops, forks, or other designs for supporting a substrate and / or providing access to a substrate (such as for alignment or engagement).

[0041] The end effector 235, or components or portions of the end effector, can be used to contact the substrate during transport or movement. These components and the end effector can be made of or include a variety of materials including conductive materials and / or insulating materials. In some embodiments, the material can be coated or plated to withstand contact with precursors or other chemicals that may enter the transport chamber from an overlying processing chamber.

[0042] In addition, the material may also be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support may be operable to heat a substrate disposed on the support. The substrate support may be configured to increase the surface temperature or substrate temperature to a temperature greater than or about 100°C, greater than or about 200°C, greater than or about 300°C, greater than or about 400°C, greater than or about 500°C, greater than or about 600°C, greater than or about 700°C, greater than or about 800°C, or higher. Any of these temperatures may be maintained during operation, so the components of the transport device 220 may be exposed to any of these stated or covered temperatures. Therefore, in some embodiments, any of these materials may be selected to accommodate these temperature ranges, and may include materials such as ceramics and metals, which may be characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0043] The component coupler may also be adapted for operation in high temperature and / or corrosive environments. For example, where the terminal effector and the end are each ceramic, the coupler may include compression fittings, bayonet fittings, or other fittings that may not include additional materials (such as bolts) that may expand and contract with temperature and may cause the ceramic to crack. In some embodiments, the end may be continuous with the terminal effector and may be integrally formed with the terminal effector. Any number of other materials may be utilized that may facilitate resistance in operation or during operation and are also covered by the present technology. The transmission device 220 may include multiple components and configurations that may facilitate movement of the terminal effector in multiple directions, which may facilitate rotational movement and vertical or lateral movement of a drive system component to which the terminal effector may be coupled in one or more ways.

[0044] Figure 3 A schematic isometric view of a transfer region of chamber system 300 is shown of an exemplary chamber system according to some embodiments of the present technology. Chamber system 300 can be similar to the transfer region of chamber system 200 described above and can include similar components, including any of the components, features, or configurations described above. Figure 3 It can also be used with the following Figure 1 The following describes some of the components of the coupler covered by the present technology.

[0045] The chamber system 300 may include a chamber body 305 or housing defining a transfer region. As previously described, within the defined volume, there may be a plurality of substrate supports 310 distributed around the chamber body. As will be further described below, each substrate support 310 may be vertically translated along a central axis of the substrate support between a first position shown in the figure and a second position where substrate processing may be performed. The chamber body 305 may also define one or more access ports 307 through the chamber body. As previously described, a transfer device 335 may be positioned within the transfer region and configured to engage and rotate substrates between substrate supports 310 within the transfer region. For example, the transfer device 335 may be rotated about the central axis of the transfer device to reposition the substrate. In some embodiments, the transfer device 335 may also be laterally translated to further facilitate repositioning of the substrate at each substrate support.

[0046] The chamber body 305 may include a top surface 306 that provides support for the overlying components of the system. The top surface 306 may define a gasket groove 308 that provides a base for the gasket to provide an airtight seal of the overlying components for vacuum processing. Unlike some conventional systems, the chamber system 300 and other chamber systems according to some embodiments of the present technology may include an open transfer area within the processing chamber, and the processing area may be formed to overlie the transfer area. Because the transfer device 335 creates a sweeping area, a support or structure for separating the processing area may not be available. Therefore, as will be described below, the present technology may utilize an overlying structure to form a separated processing area overlying the open transfer area. Therefore, in some embodiments, the seal between the chamber body and the overlying components may only occur around the outer chamber body wall defining the transfer area, and in some embodiments, there may be no internal coupling. The chamber body 305 may also define a hole 315 that can facilitate the flow of exhaust gas from the processing area of ​​the overlying structure. The top surface 306 of the chamber body 305 may also define one or more gasket grooves around the hole 315 for sealing with an overlying component. In addition, the hole may also provide a locating feature that may facilitate stacking of components in some embodiments.

[0047] Figure 4 A schematic isometric view of an overlying structure of a chamber system 300 according to some embodiments of the present technology is shown. For example, in some embodiments, a first cover plate 405 can be disposed on the chamber body 305. The first cover plate 405 can be characterized by a first surface 407 and a second surface 409 opposite the first surface. The first surface 407 of the first cover plate 405 can be in contact with the chamber body 305 and can define a companion groove to cooperate with the groove 308 discussed above to create a gasket channel between the components. The first cover plate 405 can also define a hole 410 that can provide separation of an overlying area of ​​the transfer chamber to form a processing area for substrate processing.

[0048] The holes 410 may be defined through the first cover plate 405 and may be at least partially aligned with the substrate supports in the transfer region. In some embodiments, the number of holes 410 may be equal to the number of substrate supports in the transfer region, and each hole 410 may be axially aligned with one of the plurality of substrate supports. As will be further described below, when the substrate support is vertically raised to a second position within the chamber system, the processing region may be at least partially defined by the substrate support. The substrate support may extend through the holes 410 of the first cover plate 405. Therefore, in some embodiments, the holes 410 of the first cover plate 405 may be characterized by a diameter that is larger than the diameter of the associated substrate support. Depending on the amount of clearance, the diameter can be about 25% or less than the diameter of the substrate support, and in some embodiments, can be about 20% or less, about 15% or less, about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less than the diameter of the substrate support to provide a minimum clearance distance between the substrate support and the aperture 410.

[0049] The first cover plate 405 may also include a second surface 409 opposite the first surface 407. The second surface 409 may define a recessed lug 415 that may pass through the second surface 409 of the first cover plate 405 to create an annular recessed shelf. In some embodiments, a recessed lug 415 may be defined around each of the plurality of holes 410. As will be further described below, the recessed shelf may provide support for the cover stacking component. In addition, the first cover plate 405 may also define a second hole 420 that may at least partially define a pumping channel from an overlying component described below. The second hole 420 may be axially aligned with the hole 315 of the chamber body 305 described previously.

[0050] Figure 5 A schematic partial isometric view of a chamber system 300 according to some embodiments of the present technology is shown. A partial cross-section through two processing regions and a portion of a transfer region of the chamber system may be illustrated. For example, the chamber system 300 may be a quad-section of the previously described processing system 100, and may include any of the components of any of the previously described components or systems.

[0051] As illustrated by the figures, the chamber system 300 may include a chamber body 305 defining a transfer region 502 including a substrate support 310 that may extend into the chamber body 305 and may translate vertically as previously described. A first cover plate 405 may be disposed overlying the chamber body 305 and may define apertures 410 to create an access to a processing region 504 formed with additional chamber system components. A cover stack 505 may be disposed around or at least partially within each aperture, and the chamber system 300 may include a plurality of cover stacks 505, including a number of cover stacks equal to the number of apertures 410 in the plurality of apertures. Each cover stack 505 may be disposed on the first cover plate 405 and may be disposed on a shelf created by a recessed ledge through a second surface of the first cover plate. The cover stack 505 may at least partially define a processing region 504 of the chamber system 300.

[0052] As shown, the processing area 504 can be vertically offset from the transfer area 502, but can be coupled with the transfer area fluid. In addition, the processing area can be separated from other processing areas. Although the processing area can be coupled with other processing areas fluidly from below through the transfer area, the processing area can also be isolated from each of the other processing areas fluidly from above. In some embodiments, each cover stack 505 can also be aligned with the substrate support. For example, as shown, the cover stack 505a can be aligned above the substrate support 310a, and the cover stack 505b can be aligned above the substrate support 310b. When raised to an operating position (such as a second position), the substrate can be transported for individual processing in a separate processing area. As will be further described below, when in this position, each processing area 504 can be at least partially defined from below by the associated substrate support in the second position.

[0053] Figure 5Also illustrated is an embodiment in which the chamber system may include a second cover plate 510. The second cover plate 510 may be coupled to each cover stack in the cover stack, which in some embodiments may be positioned between the first cover plate 405 and the second cover plate 510. As will be explained below, the second cover plate 510 may facilitate access to components of the cover stack 505. The second cover plate 510 may define a plurality of holes 512 through the second cover plate. Each hole in the plurality of holes may be defined to provide a fluid inlet and outlet to a particular cover stack 505 or processing region 504. In some embodiments, a remote plasma unit 515 may be optionally included in the chamber system 300 and may be supported on the second cover plate 510. In some embodiments, the remote plasma unit 515 may be fluidically coupled to each hole 512 in the plurality of holes through the second cover plate 510. An isolation valve 520 may be included along each fluid conduit to provide fluid control for each individual processing region 504. For example, as shown, hole 512a may provide a fluid inlet and outlet for the cover stack 505a. The aperture 512a may also be axially aligned with any of the cover stack components, and in some embodiments, with the substrate support 310a, which may create an axial alignment for each of the components associated with an individual processing zone, such as along a central axis through the substrate support or any of the components associated with a particular processing zone 504. Similarly, the aperture 512b may provide fluid access to the cover stack 505b, and may be aligned, including in some embodiments, axially aligned with the components of the cover stack and the substrate support 310b.

[0054] Figure 6 A schematic top plan view of one embodiment of a semiconductor processing system 600 according to some embodiments of the present technology is shown. The figure may include components of any of the previously illustrated and described systems, and may also show further aspects of any of the previously described systems. It should be understood that the illustration may also show exemplary components that may appear on any of the quad segments 109 described above.

[0055] The semiconductor processing system 600 may include a cover plate 605, which may be similar to the previously described second cover plate 510. For example, the cover plate 605 may define a plurality of holes similar to the holes 512, which may provide access to a plurality of processing chambers positioned below the cover plate 605. Each hole in the plurality of holes may be defined to provide fluid access to a particular cover stack, processing chamber, and / or processing region.

[0056] The gas separator 610 can be disposed on the top surface of the cover plate 605. For example, the gas separator 610 can be centered between the holes of the cover plate 605. The gas separator 610 can be fluidly coupled to a plurality of input weldments 615 that deliver gases (such as precursors, plasma effluents, and / or purge gases from a plurality of gas sources) to the gas separator 610. For example, each of the input weldments 615 can extend vertically from a gas source positioned below the cover plate 605 and through a feed-through plate 620. A portion of the input weldment 615 above the feed-through plate 620 can be bent horizontally and can direct gas toward the gas separator 610. In some embodiments, some or all of the input weldment 615 can be disposed within a heater jacket 619 that helps prevent heat loss along the length of the input weldment 615.

[0057] As will be discussed further below, the gas separator 610 can receive gas from the input weldment 615 and can recursively separate the gas flow into a greater number of gas outputs, each of which interfaces with a corresponding valve block 625 in a plurality of valve blocks 625. The valve blocks 625 can interface with one or more valves 627 that facilitate controlling the flow of gas through the valve blocks 625. For example, actuation of the valve 627 at each valve block 625 can control whether purge gas and / or process gas flows to a corresponding process chamber or is diverted from a process chamber to another location in the system 600. For example, the outlet of each of the valve blocks 625 can each be fluidly coupled to an output weldment 630 that can deliver the purge gas and / or process gas to an output manifold 635 associated with a particular process chamber. For example, the output manifold 635 can be positioned over each hole formed in the cover plate 605 and can be fluidly coupled to the cover stack component to deliver one or more gases to a processing region of a corresponding process chamber.

[0058] Figure 7A schematic top plan view of a gas separator 610 interfaced with a plurality of input welds 615 is shown. Each of the input welds 615 defines a gas passage formed between an inlet 616 and an outlet 618. The outlet 618 of each of the input welds 615 can be coupled to a corresponding gas inlet of the gas separator 610, such that gas can flow from each gas source through the input weld 615 and into the gas separator 610. As just one example, a first input weld 615a can deliver a deposition gas, such as, but not limited to, tetraethyl orthosilicate ("TEOS") or any other silicon-containing precursor, to a single gas inlet of the gas separator 610. A second input weld 615b can deliver a carrier gas (such as argon) and / or an oxygen-containing precursor, such as diatomic oxygen, ozone, and / or a nitrogen-containing precursor in combination with oxygen, water, alcohol, or other materials, to two or more gas inlets of the gas separator 610. Although two input welds are shown, it will be understood that in some embodiments, a single input weld delivering one gas or a mixture of gases can be used. In other embodiments, more than two input welds can be provided. In some embodiments, one or more shunt welds 617 can be coupled with gas separator 610 to lead gas from the processing chamber and gas separator 610, such as leading to the pre-stage pipeline. Such an arrangement can make it possible to deliver up to three different chemicals to the processing chamber (for example, only the gas from the first input weld 615a, only the gas from the second input weld 615b, or the gas from both the first input weld 615a and the second input weld 615b). As shown, the shunt weld 617 includes two branches, each branch coupled with the gas separator 610. It will be understood that any number of branches (including a single branch) can be provided on the shunt weld 617. The gas flow flowing through each of these branches converges and flows out of the gas separator 610. It will be understood that other weld arrangements are also possible, including arrangements comprising more or less welds, wherein a greater number of welds enable a greater number of chemical gases to be delivered to the processing chamber with a single weld arrangement.

[0059] The gas separator 610 can define a plurality of gas channels 606 extending between a gas inlet of the gas separator 610 and a gas outlet 608 of the gas separator 610 and coupling the gas inlet with the gas outlet fluid. At least some of the gas channels 606 can separate the gas flow from a single gas inlet to a plurality of gas outlets 608, so that the gas separator 610 includes more gas outlets 608 than the number of gas inlets. As shown, four gas channels 606a extend radially outward from the outlet 618 of the first input weldment 615a and separate the flow from the first input weldment 615a to deliver gas to four different gas outlets 608a. Each of the gas outlets 608a can be positioned on a different side of the gas separator 610. This allows a single gas source to provide an equal flow rate of gas through each of the four gas outlets 608a using a single input weldment 615 (with a single outlet) and a single gas separator 610. Two gas channels 606b can be fluidly coupled to each outlet 618 of the second input weldment 615b. Each gas channel 606b can deliver gas to a different one of the four gas outlets 608b, wherein each of the gas outlets 608b is positioned on a different side of the gas separator 610. Such a design enables a single input weldment 615 to be divided into two outlets to deliver gas to four different gas outlets 608b. Each side of the gas separator 610 may include an inlet for a split gas cavity 606c. Each split gas cavity 606c may be coupled to a split weldment 617. It should be understood that the arrangement of the gas inlet, gas outlet 608 and gas channel 606 represents only a single embodiment of the gas separator 610, and the placement and orientation of the gas inlet, gas outlet 608 and / or gas channel 606 may have many variations. The cavity and port of the gas separator 610 may be modified based on the number of input weldments. In addition, the gas channels 606 can be arranged to provide any number of flow paths, including a single flow path, from a given gas inlet. The gas separator 610 can be designed to accommodate any number of input weldments from a variety of gas sources, allowing the number of chemicals supported by the gas separator to be scaled to meet the needs of a specific processing operation.

[0060] In some embodiments, the gas separator 610 may include a heat source. For example, the heater cartridge 607 may be coupled to and / or embedded in the body of the gas separator 610. In some embodiments, the hot cartridge 607 may be positioned at the center of the gas separator 610 so that a uniform temperature gradient may be provided throughout the gas separator 610. By providing a heat source within the gas separator 610, a stronger temperature control may be provided for the system 600, which may improve the quality and uniformity of the film deposition operation. The heat source may heat the gas separator 610 to a temperature of about or above 75°C, about or above 100°C, about or above 125°C, about or above 150°C, about or above 175°C, about or above 200°C, or more.

[0061] Figure 8 A schematic isometric view of one of the valve blocks 625 is shown. Each of the valve blocks 625 can define a plurality of gas chambers 626 that can deliver gas from an inlet 628 to one or more valve positions 632. For example, a first gas chamber 626a can extend from an inlet 628a (the inlet 628a can be fluidly coupled to one of the gas outlets 608a of the gas separator 610 to flow deposition gas) and can be fluidly coupled to a first valve position 632a and a second valve position 632b. A valve (such as valve 627) can be coupled to the first valve position 632a, which can be operated to selectively divert gas flowing through the first gas chamber 626a to a divert gas chamber 626d, which can be fluidly coupled to a divert gas chamber 606c of the gas separator 610. The valve can be coupled to a second valve position 632b that can be operated to selectively flow gas through the delivery gas chamber 626c to the delivery outlet 634. The delivery outlet 634 can be coupled to one of the output weldments 630 to deliver the gas to one of the processing chambers via one of the output manifolds 635. In some embodiments, the valve interfaced with a particular valve block 625 can divert the flow of deposition gas through the diverter gas chamber 626d while the flow rate of the deposition gas is ramped up to the full flow rate. Once the full flow rate is reached, the valve can be switched to deliver the full steady flow rate of deposition gas to the processing chamber via the delivery outlet 634. The second gas chamber 626b can extend from the inlet 628b (the inlet 628b can be fluidly coupled to one of the gas outlets 608b of the gas separator 610) and can be fluidly coupled to the third valve position 632c. The valve may be coupled to a third valve location 632 c that may be operable to selectively direct gas flowing through the second gas chamber 626 b to the second valve location 632 b for subsequent delivery to the delivery outlet 634 .

[0062] Fig. 9 A schematic top plan view of a gas separator 610 docked with a plurality of valve blocks 625 is shown. As shown, the gas separator 610 has four major sides, wherein each side of the gas separator 610 is docked with a separate valve block 625. However, it will be understood that other numbers of valve blocks 625 may be docked with a single gas separator. In some embodiments, the number of valve blocks 625 may match the number of processing chambers present in the processing system 600, so that each processing chamber may have a dedicated valve block 625. This enables the gas flow to be switched independently of each other at each valve block 625, which may allow the gas flow to be adjusted in a manner that simulates a processing system in which each processing chamber has a separate gas source. For example, a deposition gas may flow to all four processing chambers via the gas separator 610 and the valve block 625. If the deposition rate in one or more of the chambers is higher than in the other chambers, the valve 627 and valve block 625 associated with the chamber(s) having the high deposition rate may divert the deposition gas flow from the corresponding chamber(s) to adjust the deposition rate of the individual chambers.

[0063] When the gas separator 610 is docked with the valve block 625, the gas outlet 608 of the gas separator 610 can be aligned and docked with the corresponding inlet 628 of the valve block 625 to provide a gas flow path from the gas separator 610 to the delivery outlet 634, and / or to provide a diversion path between the valve block 625 and the gas separator 610. For example, the gas outlets 608a can each dock with one of the inlets 628a of the valve block 625, and the gas outlets 608b can each dock with one of the inlets 628b of the valve block 625. The exposed end of each of the diversion cavities 606c of the gas separator 610 can dock with the output of the diversion gas cavity 626d of one of the valve blocks 625 in the valve block 625.

[0064] In some embodiments, each valve block 625 can include a heat source. For example, a heater cartridge 629 can be coupled to and / or embedded in the body of the valve block 625. In some embodiments, the heater cartridge 629 can be positioned near the first gas chamber 626a (the first gas chamber 626a can flow a process gas, such as TEOS), which can provide heat to the process gas. By providing a heat source within the valve block 625, greater temperature control can be provided for the system 600, which can improve the quality and uniformity of the film deposition operation. The heat source can heat the valve block 625 to a temperature of about or above 75°C, about or above 100°C, about or above 125°C, about or above 150°C, about or above 175°C, about or above 200°C, or more.

[0065] The interface between the gas separator 610 and each of the valve blocks 625 may include a choke. For example, the opening of each gas outlet 608 of the gas separator 610 and / or the opening of each inlet 628 of the valve block 625 may include a choke. The choke may be in the form of a choke plate that defines a hole with a reduced diameter relative to the gas channel 606 and / or the gas cavity 626. Fig. 10A A schematic isometric view of one embodiment of a choke plate 640 secured with the gas outlet 608 of the gas separator 610 is shown (although some embodiments may alternatively or additionally include a choke plate at the inlet 628 of the valve block 625). The choke plate 640 may be received and secured within a groove 645 formed at the gas outlet 608. In some embodiments, one or more O-rings 655 may be used to seal the interface between the body of the choke plate 640 and the face of the gas separator 610 and / or the valve block 625 to prevent any gas flowing through the choke plate 640 from escaping the interface, as shown. Fig. 10B , shown in a schematic cross-sectional top elevation view. The choke plate 640 can define a central orifice 650 having a diameter that is smaller than the diameter of the gas passage 606 and the gas cavity 626. As shown, the upstream side of the central orifice 650 may have a smaller diameter than the downstream side of the central orifice 650. For example, the diameter of the central orifice 650 may gradually decrease and / or suddenly increase from the upstream side to the downstream side of the choke plate 640. In other embodiments, the central orifice 650 may have a constant diameter throughout the thickness of the choke plate 640. The reduced diameter of the central orifice 650 relative to the diameter of the gas passage 606 and the gas cavity 626 enables the central orifice 650 to be used as a passive flow control device, which enables downstream components (including valve blocks, output weldments, manifolds, cover stacks, etc.) to be modified or replaced without any further flow rate adjustments. Such modifications can be made without further adjusting the flow rate as long as the pressure upstream of the choke plate 640 remains the same at each interface of the gas separator 610 and the valve block 625, which can be achieved by maintaining the same size central orifice 650 at each interface location. The choke point provided by the central orifice 650 ensures that the flow rate through the central orifice 650 is only a function of the upstream pressure, because the amount of gas flowing through the choke point depends only on the pressure upstream of the central orifice 650.

[0066] O-rings or gaskets may be placed between each component of the system 600. In particular, O-rings or gaskets may be placed between couplers of various gas conduits, which may help seal component connections and, in some embodiments, prevent gas leaks.

[0067] Fig.11A schematic isometric view of a flow splitting architecture 1100 is shown. The flow splitting architecture 1100 can be used to split process gases out of a processing chamber and into an exhaust system. Process gases can be split out of a processing chamber for various reasons. For example, a portion of a process gas can be split from one or more processing chambers in a processing chamber to adjust the flow rate of the process gas to various chambers, such as to equalize the flow rate to each chamber. In other cases, the process gas can be split out of each processing chamber in a processing chamber while a gas panel or other gas source ramps the flow rate of the process gas to the full flow rate. This splitting of the process gas can be performed to ensure that only the full flow rate is delivered to the chamber, which can help improve the control of the deposition rate in each processing chamber in the processing chamber. The flow splitting architecture 1100 can include a plurality of splitting weldments. Although described as weldments, it will be understood that the term "weldment" used herein can refer to other conduits used to transport gases within a processing system. The shunt architecture 1100 may include a first shunt weldment 1102, which may be used as the previously described shunt weldment 617 and may include any of the features described with respect to the shunt weldment 617. The first shunt weldment 1102 may extend between one or more shunt chambers of a gas separator (such as the shunt chamber 606c of the gas separator 610) and an exhaust system (such as the front-stage pipeline 1130) and couple the shunt chamber to the exhaust system. For example, the first shunt weldment 1102 may include one or more shunt weldment inlets 1104, which may be coupled to the shunt chamber of the gas separator. Any number of shunt weldment inlets 1104 may be provided. For example, the first shunt weldment 1102 may include at least or about one shunt weldment inlet 1104, at least or about two shunt weldment inlets 1104, at least or about three shunt weldment inlets 1104, at least or about four shunt weldment inlets 1104 or more shunt weldment inlets 1104. As shown, the first shunt weldment 1102 includes two shunt weldment inlets 1104, which can each be coupled to a corresponding outlet of the shunt chamber. For example, the shunt chamber in the gas separator can direct the shunt process gas to a plurality of shunt outlets coupled to the shunt weldment inlet 1104 (wherein the number of shunt weldment inlets 1104 matches the number of shunt outlets).

[0068] The first shunt weldment 1102 may include a plurality of shunt weldment outlets. It is contemplated that any number of shunt weldment outlets may be included on the first shunt weldment 1102, such as three, four, five, six, seven or more shunt weldment outlets, wherein a greater number of shunt weldment outlets provide a higher gas flow capacity / increase in the flow window through the shunt architecture 1100 and reduce the pressure within the first shunt weldment 1102. As shown, the first shunt weldment 1102 may include a first shunt weldment outlet 1106 and a second shunt weldment outlet 1108. Each of the first shunt weldment outlet 1106 and the second shunt weldment outlet 1108 may be coupled to the front-stage pipeline 1130 fluid, as will be described in more detail below.

[0069] By increasing the gas flow capacity and reducing the pressure within the first shunt weldment 1102, the shunt architecture 1100 can accommodate higher shunt process gas flow rates, which can also deliver higher flow rates of process gas to the process chamber and increase the deposition rate. For example, the flow rate of each processing chamber can be greater than or about 6,000 sccm, greater than or about 6,500 sccm, greater than or about 7,000 sccm, greater than or about 7,500 sccm, or greater, while the pressure in the shunt architecture 1100 can be less than or about 140 Torr, less than or about 130 Torr, less than or about 120 Torr, less than or about 110 Torr, less than or about 100 Torr, less than or about 90 Torr, less than or about 80 Torr, less than or about 70 Torr, less than or about 60 Torr, or lower. In addition, the increased gas flow capacity and reduced pressure within the shunt architecture 1100 can enable the use of passive flow devices that facilitate higher flow rates. For example, the diameter of the central orifice 650 in the choke plate 640 can be increased to reduce choke and support higher flow rates of process gas through the processing system. In some embodiments, the central orifices can each have a diameter of at least or about 1.3 mm, at least or about 1.35 mm, at least or about 1.4 mm, at least or about 1.45 mm, at least or about 1.5 mm, or more, wherein larger diameters result in reduced choke and higher flow / deposition rates.

[0070] The first split weld 1102 can include an intermediate portion 1150 extending between and fluidly coupling each of the split weld inlets 1104 and the split weld outlets 1106, 1108. For example, the intermediate portion 1150 can merge the process gas flowing through each of the split weld inlets 1104 into a single stream. The process gas stream can branch or otherwise split into separate and substantially equal flows through each of the first split weld outlets 1106 and 1108.

[0071] The first shunt weldment 1102 can be a single unitary piece, or can be multiple pieces. For example, the first shunt weldment 1102 can include a first portion 1152, which can include a shunt weldment inlet 1104 and / or a portion of the middle portion 1150. The first shunt weldment 1102 can include a second portion 1154, which can be formed by one or more weldments to form all or part of the middle portion 1150. The first shunt weldment 1102 can include a third portion 1156, which can include shunt weldment outlets 1106, 1108. The first portion 1152, the second portion 1154, and the third portion 1156 can be coupled together to form the first shunt weldment 1102.

[0072] As shown, the flow splitting structure 1100 may include a second flow splitting weldment 1110. The second flow splitting weldment 1110 may be a single unitary piece, or may be a plurality of pieces. The second flow splitting weldment 1110 may include a plurality of second flow splitting weldment inlets. For example, the second flow splitting weldment 1110 may have a second flow splitting weldment quantity that matches the flow splitting weldment outlet quantity of the first flow splitting weldment 1102. As shown, the second flow splitting weldment 1110 may have a second flow splitting weldment inlet 1112 and a third flow splitting weldment inlet 1114. The second flow splitting weldment inlet 1112 may be in fluid communication with the first flow splitting weldment outlet 1106. The third flow splitting weldment inlet 1114 may be in fluid communication with the second flow splitting weldment outlet 1108. The second flow splitting weldment 1110 may include a third flow splitting weldment outlet 1116, which may be coupled to the fore-stage pipeline 1130 to discharge process gas from the flow splitting structure 1100. Flow through each of the second split weld inlet 1112 and the third split weld inlet 1114 may be recombined within the second split weld 1110 , with the combined flow exiting the split architecture 1100 through the third split weld outlet 1116 .

[0073] The shunt architecture 1100 may include a plurality of valves coupled between each of the shunt weldment outlets of the first shunt weldment 1102 and a corresponding one of the shunt weldment inlets of the second shunt weldment 1110. For example, the number of valves may match the number of shunt weldment outlets of the first shunt weldment 1102 and / or the number of shunt weldment inlets of the second shunt weldment 1110. As shown, the shunt architecture 1100 includes a first valve 1122, which couples the second shunt weldment inlet 1112 with the first shunt weldment outlet 1106. The shunt architecture 1100 may include a second valve 1124. The second valve 1124 may couple the third shunt weldment inlet 1114 with the second shunt weldment outlet 1108. The first valve 1122 and the second valve 1124 may prevent or reduce backflow. For example, when process gas is not currently being exhausted from the flow splitting architecture 1100, the first valve 1122 and the second valve 1124 can be closed to prevent any gas in the foreline 1130 from flowing back into the first flow splitting weldment 1102 and / or back into the gas separator. The first valve 1122 and the second valve 1124 can be opened while actively splitting gas to allow the split process gas to be exhausted and / or otherwise evacuated from the flow splitting architecture 1100 and enter the foreline 1130. The first valve 1122 and the second valve 1124 can be the same valve, or can be different valves. The first valve 1122 and / or the second valve 1124 can have a valve flow coefficient greater than or about 0.3 to less than or about 0.9. For example, the first valve 1122 and / or the second valve 1124 can each have a valve flow coefficient of greater than or about 0.4 to less than or about 0.9, greater than or about 0.5 to less than or about 0.9, greater than or about 0.6 to less than or about 0.9, greater than or about 0.7 to less than or about 0.9, greater than or about 0.8 to less than or about 0.9, greater than or about 0.3 to less than or about 0.8, greater than or about 0.3 to less than or about 0.7, greater than or about 0.3 to less than or about 0.6, greater than or about 0.3 to less than or about 0.5, or greater than or about 0.3 to less than or about 0.4.

[0074] The shunt architecture 1100 can include a plurality of shunt weldment filters that can be docked downstream of each of the shunt weldments of the first shunt weldment 1102. For example, the shunt architecture 1100 can include a first shunt weldment filter 1126 disposed upstream of the first valve 1122, between the first valve 1122 and the first shunt weldment outlet 1106. The shunt architecture 1100 can include a second shunt weldment filter 1128 disposed upstream of the second valve 1124, between the second valve 1124 and the second shunt weldment 1108. The first shunt weldment filter 1126 and the second shunt weldment filter 1128 can be the same filter, or can be different filters. The first shunt weldment filter 1126 and / or the second shunt weldment filter 1128 can have a flow coefficient greater than or about 0.3 to less than or about 0.9. For example, the first shunt weldment filter 1126 and / or the second shunt weldment filter 1128 can have a flow coefficient of greater than or about 0.6 to less than or about 0.9, greater than or about 0.7 to less than or about 0.9, greater than or about 0.8 to less than or about 0.9, greater than or about 0.6 to less than or about 0.8, or greater than or about 0.6 to less than or about 0.7. The filter can be used to filter out any particles caused by gas backflow within the shunt weldment.

[0075] As discussed above, the process gas chamber and the shunt chamber defined with the gas separator can be coupled via at least one valve fluid. The valve block can be coupled to the at least one valve. The valve block can be coupled to the gas separator. The shunt architecture 1100 (such as the first shunt weldment 1102 or the second shunt weldment 1110) can be in fluid communication with the foreline 1130. For example, the third shunt weldment outlet 1116 of the second shunt weldment 1110 can be coupled to the foreline 1130. When the process gas is shunted out of the processing chamber, the foreline 1130 can extract and / or otherwise exhaust gas and particles.

[0076] The first shunt weldment 1102 can be surrounded by one or more heater sleeves 1140. In an embodiment, the first shunt weldment 1102 can be surrounded by between one and five heater sleeves 1140. For example, the first shunt weldment 1102 can be surrounded by between one and four heater sleeves 1140, between one and three heater sleeves 1140, or between one and two heater sleeves 1140. In some embodiments, each part of the first shunt weldment 1102 can include one or more heater sleeves 1140. For example, the first part 1152, the second part 1154, and / or the third part 1156 can each include one or more dedicated heater sleeves 1140. This can allow the use of any number of heater sleeves 1140 to match the contour of the first shunt weldment 1102, which can simplify the manufacture, installation, and / or maintenance of the heater sleeves 1140 and / or the first shunt weldment 1102. Other parts of the shunt architecture 1100 can be surrounded by heater sleeves 1140. For example, the second shunt weldment 1110, the first valve 1122, the second valve 1124 and / or the shunt weldment filters 1126, 1128 can be surrounded by a heater jacket 1140. Each heater jacket 1140 in the heater jacket 1140 can isolate the corresponding area of ​​all or part of the shunt architecture 1100 to keep the shunt process gas at a desired temperature. For example, the process gas can be heated near the gas panel and / or in the gas separator. The heater jacket 1140 can help maintain the temperature of the heated shunt process gas. By maintaining the temperature of the shunt process gas at a desired level (and providing an increased pressure window), condensation from the process gas in the shunt architecture 1100 can be reduced. The reduction of condensation can prevent the accumulation of residues in the shunt architecture and can help maintain the flow characteristics required by the shunt architecture 1100.

[0077] The shunt weldment can have any inner diameter, which can be based on one or more factors, such as the volume of fluid to be passed through the shunt architecture 1100, the maximum flow rate through the shunt architecture 1100, the maximum pressure through the shunt architecture 1100, the characteristics of the passive flow control device (such as the central orifice 650 in the choke plate 640), the number of shunt weldment outlets in the first shunt weldment 1102, and / or other factors. In an embodiment, the shunt weldment (such as the first shunt weldment 1102 and / or the second shunt weldment 1110) can have an inner diameter of greater than or about 5.0 mm to less than or about 20.0 mm. For example, the inner diameter can be greater than or about 7.5 mm to less than or about 20.0 mm, greater than or about 10.0 mm to less than or about 20.0 mm, greater than or about 12.5 mm to less than or about 20.0 mm, greater than or about 15.0 mm to less than or about 20.0 mm, greater than or about 17.5 mm to less than or about 20.0 mm, greater than or about 5.0 mm to less than or about 17.5 mm, greater than or about 5.0 mm to less than or about 15.0 mm, greater than or about 5.0 mm to less than or about 12.5 mm, greater than or about 5.0 mm to less than or about 10.0 mm, or greater than or about 5.0 mm to less than or about 7.5 mm. In some embodiments, each weldment or portion thereof within the shunt architecture 1100 can have the same inner diameter, while in other embodiments, one or more weldments (or portions thereof) can have different inner diameters.

[0078] Fig.12 Operations of an exemplary semiconductor processing method 1200 according to some embodiments of the present technology are shown. The method can be performed using various processing systems, including the processing systems 100, 300, and 600 described above. The method 1200 may include a number of optional operations that may or may not be particularly associated with some embodiments of methods according to the present technology.

[0079] Method 1200 may be performed to divert process gas from multiple processing chambers. For example, a portion of the process gas may be diverted from one or more of the processing chambers to adjust the flow rate of the process gas to various chambers, such as to equalize the flow rate to each chamber. In other cases, the process gas may be diverted from each of the processing chambers so that the flow rate of the process gas can be ramped up to the full flow rate before being delivered to the chamber. The method may include optional operations before starting method 1200, or the method may include additional operations. For example, method 1200 may include operations performed in a different order than shown. At step 1205, method 1200 may include introducing gas into the one or more gas chambers via a gas inlet end of one or more gas chambers defined by a gas separator. The gas may be any process gas, such as a precursor and / or any carrier gas used in operations performed in the processing system. At step 1210, method 1200 may include directing the diverted portion of the gas into one or more diverter chambers coupled to at least one of the gas chambers fluid. As described above, the gas chamber and / or the diverter chamber can be defined by a gas separator, which in some embodiments can be similar to gas separator 610. The diverted portion of the gas can be less than or equal to the initial gas volume introduced into the gas chamber. In some cases, a portion of the gas can flow to one or more processing areas of one or more processing chambers in the processing chamber. In other cases, all of the process gas can be diverted from the processing chamber for a period of time.

[0080] At step 1215, method 1200 may include flowing the split portion of the gas through the split chamber and into the split weldment. The split weldment may include any of the components and features described above, and may be or include the split weldment 617 or 1102, and / or other components of the split architecture 1100. At step 1220, method 1200 may include dividing the flow of the split portion of the gas into a first split portion and a second split portion through a first split weldment outlet and a second split weldment outlet.

[0081] At optional step 1225, method 1200 may include passing a first diverted portion of gas through a first filter and / or a first valve, and / or passing a second diverted portion of gas through a second filter and / or a second valve. At optional step 1230, method 1200 may include recombining the first diverted portion of gas and the second diverted portion of gas. In some embodiments, after passing the first diverted portion of gas and the second diverted portion of gas through the first filter and the second filter and / or the first valve and the second valve, the first diverted portion of gas and the second diverted portion of gas may be recombined. At optional step 1235, method 1200 may include transferring the recombined first diverted portion of gas and the second diverted portion of gas to a foreline.

[0082] By dividing the flow of the split portion of the gas into the first split portion and the second split portion via the first split weld outlet and the second split weld outlet, the split architecture can accommodate higher flow rates due to the reduced pressure in the weld. This can enable the processing system to utilize a larger process gas flow rate for delivery to each processing chamber, which can increase the deposition rate in each chamber. For example, in a processing system associated with a gas separator, the flow rate per processing area can be greater than or about 6,000sccm, greater than or about 6,500sccm, greater than or about 7,000sccm, greater than or about 7,500sccm, or greater. The pressure in the split weld can be less than or about 140 Torr, less than or about 130 Torr, less than or about 120 Torr, less than or about 110 Torr, less than or about 100 Torr, less than or about 90 Torr, less than or about 80 Torr, less than or about 70 Torr, less than or about 60 Torr, or lower. In contrast, conventional technology may be unable to supply flow rates greater than or about 5,800 per processing zone without choking, or may be unable to operate at pressures less than 215 Torr.

[0083] The reduced pressure within the shunt architecture can allow for an increase in the gas flow regime introduced into the gas separator and (multiple) processing areas. By increasing the gas flow regime, a better structure can be formed in the processing system. The separation of the shunt weldment can increase the conductivity in the shunt weldment, as previously discussed, which can reduce the downstream pressure. As previously discussed, the reduced downstream pressure can allow for an increase in the size of the central orifice defined in the choke plate, which can enable a higher flow rate to be provided to the processing system. A higher flow rate can desirably increase the deposition rate, or can allow for additional processing chambers or processing areas in the processing system. In addition, by reducing the pressure in the shunt weldment, the risks associated with pressure spikes (such as the occurrence of condensation) can be reduced, because the reduction in pressure within the shunt architecture will also reduce the instantaneous pressure difference that may occur when the valve coupled to the shunt architecture is opened and / or closed. That is, due to the lower operating pressure compared to conventional shunt weldments, the acceptable range of pressure increase is greater.

[0084] In the foregoing description, for the purpose of explanation, many details have been set forth to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0085] Several embodiments have been disclosed, and those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. In addition, in order to avoid unnecessarily obscuring the present technology, many well-known processes and elements are not described. Therefore, the above description should not be regarded as limiting the scope of the present technology.

[0086] In the case of providing a range of values, it is understood that unless the context clearly specifies otherwise, each intermediate value between the upper and lower limits of this range is specifically disclosed until the minimum fraction of the lower limit unit. Any narrower range between any clarified value or unclarified intermediate value in the clarified range and any other clarified value or intermediate value in this clarified range is covered. Those upper and lower limits of smaller ranges can be included or excluded independently in a smaller range, and any one, none or both of the limits are included in each range of a smaller range is also included in the present technology, subject to any specifically excluded limits in the clarified range. In the case of clarifying that a range includes one or both of the limits, the range excluding any one or both of the included limits is also included.

[0087] As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a cover plate" includes a plurality of such cover plates, and reference to "the gas separator" includes reference to one or more gas separators and equivalents thereof known to those skilled in the art, and so forth.

[0088] Furthermore, when used in this specification and the appended claims, the words “comprise,” “comprising,” “contain,” “containing,” “include,” and “including” are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, actions, or groups.

Claims

1. A semiconductor processing system comprising: a plurality of processing chambers, each processing chamber defining a processing region; a cover plate positioned above the plurality of processing chambers; A gas separator, the gas separator being disposed on the cover plate, the gas separator comprising a top surface and a plurality of side surfaces, wherein the gas separator defines: one or more gas inlets; one or more gas outlets; one or more gas cavities extending between and fluidly coupling the one or more gas inlets and each of the one or more gas outlets; as well as a shunt chamber fluidly coupled to the one or more gas chambers and directing gas from one of the plurality of processing chambers out through a shunt outlet; as well as A first flow splitter weldment extends from the flow splitter outlet and is fluidly coupled to the flow splitter outlet, wherein the first flow splitter weldment includes a first flow splitter weldment outlet and a second flow splitter weldment outlet.

2. The semiconductor processing system of claim 1 , further comprising: A second shunt weldment, the second shunt weldment having a second shunt weldment inlet and a third shunt weldment inlet, wherein: The second flow splitter weldment inlet is in fluid communication with the first flow splitter weldment outlet; and The third flow-dividing weldment inlet is in fluid communication with the second flow-dividing weldment outlet.

3. The semiconductor processing system of claim 2, further comprising: a first valve coupling the second flow splitter weldment inlet with the first flow splitter weldment outlet; as well as A second valve couples the third flow splitter weldment inlet with the second flow splitter weldment outlet.

4. The semiconductor processing system of claim 3, further comprising: a first flow-dividing weldment filter, the first flow-dividing weldment filter being disposed upstream of the first valve; as well as A second flow-dividing weldment filter is disposed upstream of the second valve.

5. The semiconductor processing system of claim 1, wherein: The first flow-dividing weldment is in fluid communication with the front-stage pipeline.

6. The semiconductor processing system of claim 1, further comprising: Between one and five heater sleeves, said one and five heater sleeves surrounding said first shunt weldment.

7. A semiconductor processing system comprising: Cover plate; A gas separator, the gas separator being disposed on the cover plate, the gas separator comprising a top surface and a plurality of side surfaces, wherein the gas separator defines: Gas inlet; Gas outlet; a gas cavity extending between the gas inlet and the gas outlet and fluidly coupling the gas inlet and the gas outlet; as well as a shunt chamber, the shunt chamber being fluidically coupled to the gas chamber and directing gas from the processing chamber out through a shunt outlet; as well as A first flow splitter weldment extends from the flow splitter outlet and is fluidly coupled to the flow splitter outlet, wherein the first flow splitter weldment includes a first flow splitter weldment outlet and a second flow splitter weldment outlet.

8. The semiconductor processing system of claim 7, further comprising: A front-stage pipeline is fluidically connected to the first flow-dividing weldment.

9. The semiconductor processing system of claim 8, further comprising: A second shunt weldment, wherein the second shunt weldment has a second shunt weldment inlet, a third shunt weldment inlet and a third shunt weldment outlet, wherein: The second flow splitter weldment inlet is coupled to the first flow splitter weldment outlet; The third flow splitter weldment inlet is coupled to the second flow splitter weldment outlet; and The third flow splitter weldment outlet is coupled to the front-stage pipeline.

10. The semiconductor processing system of claim 9, further comprising: a first valve coupling the second flow splitter weldment inlet with the first flow splitter weldment outlet; as well as A second valve couples the third flow splitter weldment inlet with the second flow splitter weldment outlet.

11. The semiconductor processing system of claim 10, wherein: The first valve and the second valve have a valve flow coefficient of greater than or about 0.3 to less than or about 0.

9.

12. The semiconductor processing system of claim 7, wherein: The gas chamber and the diverter chamber are fluidly coupled via at least one valve.

13. The semiconductor processing system of claim 12, further comprising: A valve block is coupled to the at least one valve, wherein the valve block is coupled to the gas separator.

14. The semiconductor processing system of claim 7, wherein: The first flow divider weldment has an inner diameter of greater than or about 5.0 mm to less than or about 20.0 mm.

15. The semiconductor processing system of claim 7, further comprising: Between one and five heater sleeves, said one and five heater sleeves surrounding said first shunt weldment.

16. A semiconductor processing method comprising the following steps: introducing a gas into the gas chamber defined by the gas separator through a gas inlet end of the gas chamber; directing a split portion of the gas into a split chamber fluidly coupled to the gas chamber; Allowing the split portion of the gas to flow through the split chamber and into the split weldment; as well as The flow of the split portion of the gas is split into a first split portion and a second split portion by a first split weld outlet and a second split weld outlet.

17. The semiconductor processing method of claim 16, further comprising the steps of: passing the first split portion of the gas through a first filter and a first valve; and The second split portion of the gas is passed through a second filter and a second valve.

18. The semiconductor processing method of claim 17, further comprising the steps of: After the first split portion of the gas and the second split portion of the gas flow through the first filter and the second filter, the first split portion of the gas and the second split portion of the gas are recombined.

19. The semiconductor processing method of claim 18, further comprising the steps of: The recombined first split portion of the gas and the second split portion of the gas are delivered to a foreline.

20. The semiconductor processing method of claim 16, wherein: The pressure in the shunt weldment is less than or about 150 Torr.

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