Modification method and system for improving insulating property of basin-type insulator

Abstract

The invention discloses a modification method and system for improving the insulating property of a basin-type insulator. Relates to the field of insulating material surface modification. The method comprises the following steps: step 1, dividing the surface of the basin-type insulator into a plurality of radial equidistant annular areas; 2, measuring the surface potential, the surface conductivity and the surface roughness of the basin-type insulator before modification; 3, based on the surface potential, the surface conductivity and the surface roughness of the basin-type insulator before modification, ion beam treatment is conducted on the annular area from the high-voltage end to the grounding end in sequence, potential distribution is optimized through the ion beam treatment by changing the conductivity and the roughness, and the surface of the basin-type insulator is modified; and 4, carrying out a flashover performance test on the basin-type insulator subjected to the ion beam treatment, and verifying the flashover performance of the modified basin-type insulator. Through surface gradient ion beam treatment, a structured roughness surface is formed, and the surface flashover performance of the basin-type insulator can be effectively improved.

Description

Technical Field

[0001] The invention relates to the technical field of surface modification of insulating materials, and more particularly to a modification method and system for improving the insulating performance of a pot-type insulator. Background Art

[0002] GIL (gas-insulated metal-enclosed transmission line) is widely used as a good choice to solve the problem of power transmission in power stations due to its high reliability and strong transmission capacity. However, the pot insulator is inevitably subjected to complex electrical, thermal, mechanical and other coupling stresses during long-term operation under high voltage and high power environment. Its insulation deteriorates or even fails under the induction of local defects. Therefore, the surface modification of pot insulator is of great significance.

[0003] At present, the surface modification methods of insulators mainly include thin film deposition, surface coating and traditional uniform sandpaper polishing, etc. However, these methods are inefficient and have poor modification results for relatively complex large-scale pot-type insulators. Therefore, designing a modification method that can improve the insulation performance of pot-type insulators is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0004] In view of this, the present invention provides a modification method and system for improving the insulation performance of a pot-type insulator, by forming a structured roughness surface through surface gradient ion beam treatment, which can effectively improve the surface flashover performance of the pot-type insulator.

[0005] In order to achieve the above object, the present invention adopts the following technical solution:

[0006] A modification method for improving the insulation performance of a pot-type insulator, comprising:

[0007] Step 1: Divide the surface of the pot insulator into a plurality of radially equidistant annular regions;

[0008] Step 2: Measure the potential, surface conductivity and surface roughness of the pot-type insulator surface before modification, and shield the non-treated area;

[0009] Step 3: Based on the potential, surface conductivity and surface roughness of the basin insulator surface before modification, ion beam treatment is sequentially performed on the high voltage end to the ground end of the annular region, wherein the ion beam treatment optimizes the potential distribution by changing the conductivity and roughness, thereby modifying the basin insulator surface;

[0010] Step 4: Conduct a flashover performance test on the pot-type insulator after ion beam treatment to verify the flashover performance of the modified pot-type insulator.

[0011] Preferably, in step 1, the pot-type insulator is equally divided into 10 annular areas, and the formulas for the length of the annular width and the area of ​​the longitudinally equidistant annular areas are as follows:

[0012]

[0013] S n =π(R n 2 -R n-1 2 )

[0014] where d n is the width of the nth area from the high voltage end to the ground end; L is the radius of the basin insulator; S n is the area of ​​the nth region from the high voltage end to the ground end; R n is the average radius of the nth area from the high voltage end to the ground end.

[0015] Preferably, the potential measurement of the surface of the pot-type insulator before modification comprises: applying a 1000V DC voltage, using an electrostatic potential probe to perform multiple measurements at a constant room temperature and humidity, and taking an average value to obtain the potential measurement result of the surface of the pot-type insulator before modification;

[0016] Preferably, the surface conductivity measurement process includes: applying a 1000V DC voltage, recording a time step of 3 minutes, performing multiple measurements at a constant room temperature and humidity, taking an average value and calculating the conductivity using the following formula:

[0017]

[0018] Where D1 is the diameter of the measuring electrode, D2 is the diameter of the guard electrode, in centimeters; V a and I a are the applied DC voltage and measured current, respectively;

[0019] Preferably, the surface roughness includes: arithmetic mean surface roughness Ra and root mean square surface roughness Rrms, and the surface roughness is used to evaluate the flashover performance of the insulator.

[0020] Preferably, the gas used for the ion beam treatment is an inert gas argon Ar, and an end Hall ion source is used;

[0021] The ion beam treatment process includes: increasing the vacuum pressure in the ion beam treatment chamber, applying an anode voltage and a cathode current to the ion source, generating high-energy argon Ar + Ion beam, using high energy argon Ar + The ion beam is directed to the modified area and high energy argon Ar is injected at different treatment times. +ion beam to obtain samples with different uniform surface conductivities.

[0022] Preferably, the high energy argon Ar + The ion beam current was kept at 1A or less.

[0023] Preferably, a modification system for improving the insulation performance of a pot-type insulator is also included, comprising:

[0024] Division module: divides the surface of the pot insulator into multiple radially equidistant annular areas;

[0025] Measurement module: measures the potential, surface conductivity and surface roughness of the pot-type insulator surface before modification, and shields the non-treated area;

[0026] Ion beam treatment module: Based on the potential, surface conductivity and surface roughness of the basin insulator surface before modification, ion beam treatment is sequentially performed on the high voltage end to the ground end of the annular region. The ion beam treatment optimizes the potential distribution by changing the conductivity and roughness, and modifies the basin insulator surface.

[0027] Test module: Conduct flashover performance test on pot-type insulators after ion beam treatment to verify the flashover performance of modified pot-type insulators.

[0028] It can be seen from the above technical solutions that, compared with the prior art, the present invention discloses a modification method and system for improving the insulation performance of pot-type insulators, which can effectively improve the surface flashover performance of pot-type insulators by forming a structured roughness surface through surface gradient ion beam treatment. The present invention is suitable for improving the surface flashover performance of pot-type insulators in GIL pipelines, without the need to recast the material, and is suitable for improving the surface flashover performance of formed insulators; its experimental method and device operation are simple to implement and have strong practicality. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0030] Figure 1 An exemplary flow chart of a modification method for improving the insulation performance of a pot-type insulator provided by the present invention;

[0031] Figure 2 It is a structural schematic diagram of a pot-type insulator;

[0032] Figure 3It is a schematic diagram of the partition of the basin type insulator;

[0033] In the figure, 1. Insulator treatment area, 2. Grounding end, 3. High voltage end, 4. Area 10 (grounding end), 5. Area 1 (high voltage end), 6. Insulator radius L, 7. Ring width d n , 8. Average radius R n . DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] The embodiment of the present invention discloses a modification method for improving the insulation performance of a pot-type insulator, comprising:

[0036] Step 1: Divide the surface of the pot insulator into a plurality of radially equidistant annular regions;

[0037] Step 2: Measure the potential, surface conductivity and surface roughness of the pot-type insulator surface before modification, and shield the non-treated area;

[0038] Step 3: Based on the potential, surface conductivity and surface roughness of the basin insulator surface before modification, ion beam treatment is sequentially performed on the high voltage end to the ground end of the annular region, wherein the ion beam treatment optimizes the potential distribution by changing the conductivity and roughness, thereby modifying the basin insulator surface;

[0039] Step 4: Conduct a flashover performance test on the pot-type insulator after ion beam treatment to verify the flashover performance of the modified pot-type insulator.

[0040] Specifically, in step 1, the pot-type insulator is equally divided into 10 circular ring areas, and the formulas for the length of the ring width and the area of ​​the longitudinally equally spaced ring areas are as follows:

[0041]

[0042] S n =π(R n 2 -R n-1 2 )

[0043] where d n is the width of the nth area from the high voltage end to the ground end; L is the radius of the basin insulator; S nis the area of ​​the nth region from the high voltage end to the ground end; R n is the average radius of the nth area from the high voltage end to the ground end.

[0044] Furthermore, the annular area in the present invention serves to partition the pot-type insulator, and each area is processed after the partition; the area that has not been processed is called a non-processed area.

[0045] Furthermore, after the pot-type insulator is divided into 10 regions, ion beam implantation is performed on each region one by one to modify the pot-type insulator, and the ion beam treatment time of each modified region is different, thereby forming a gradient ion beam distribution, and uneven surface conductivity can be obtained.

[0046] Furthermore, since the modification process is performed area by area, when a certain area is modified, other areas are non-processed areas and need to be blocked.

[0047] Specifically, the potential measurement of the surface of the pot-type insulator before modification includes: applying a 1000V DC voltage, using an electrostatic potential probe to perform multiple measurements at a constant room temperature and humidity, and taking an average value to obtain the potential measurement result of the surface of the pot-type insulator before modification;

[0048] Specifically, the surface conductivity measurement process includes: applying a 1000V DC voltage, recording a time step of 3 minutes, performing multiple measurements at a constant room temperature and humidity, taking an average value, and calculating the conductivity using the following formula:

[0049]

[0050] Where D1 is the diameter of the measuring electrode, D2 is the diameter of the guard electrode, in centimeters; V a and I a are the applied DC voltage and measured current, respectively;

[0051] Specifically, the surface roughness includes: arithmetic mean surface roughness Ra and root mean square surface roughness Rrms, and the surface roughness is used to evaluate the flashover performance of the insulator.

[0052] Furthermore, after the surface of the pot-type insulator is treated by the ion beam, the surface morphology of the pot-type insulator will change, resulting in a change in the surface roughness of the pot-type insulator.

[0053] Specifically, the gas used for the ion beam treatment is the inert gas argon Ar, and an end Hall ion source is used;

[0054] The ion beam treatment process includes: increasing the vacuum pressure in the ion beam treatment chamber, applying an anode voltage and a cathode current to the ion source, generating high-energy argon Ar +Ion beam, using high energy argon Ar + The ion beam is directed to the modified area and high energy argon Ar is injected at different treatment times. + ion beam to obtain samples with different uniform surface conductivities.

[0055] Specifically, the high energy argon Ar + The ion beam current was kept at 1A or less.

[0056] See also Figure 1 The specific process of applying the method provided by the embodiment of the present invention is as follows: first, obtain a pot-type insulator in any GIL transmission pipeline, wipe it with 75% anhydrous ethanol, and dry it naturally for 10 minutes.

[0057] See also Figure 1 -b, judge the area of ​​the pot-type insulator that has been divided, whether the area of ​​the modified insulator is 10 (that is, whether all the modifications have been completed); if the area of ​​the modified insulator is not 10, enter Figure 1 -c; if the modified insulator is in area 10, it means that the modification of the current pot-type insulator is complete, and you can directly enter Figure 1 -f.

[0058] See also Figure 1 -c, measure the radius L of the pot insulator, from which the ring width can be obtained At the same time, the area S of the longitudinal equidistant annular region is obtained. n =π(R n 2 -R n-1 2 ).

[0059] See also Figure 1 -d, after obtaining the ring width and the area of ​​the longitudinally equidistant ring area, perform n1 to n 10 Conductivity test and roughness test of each block area; A modification method for improving the insulation performance of a pot-type insulator described in this embodiment, the surface conductivity of the insulator before modification, a voltage of 1000V DC is applied to the n1 area, the recording step length is 3min, 10 measurements are performed at constant room temperature and indoor humidity, and the average value is taken to obtain the conductivity of the n1 area. By analogy, n1 to n 10 All conductivity. At the same time for n1 to n 10 , measure the surface roughness at 10 different locations in any area, and take the average value as the actual roughness value, thus obtaining n1 to n 10All roughness is compared after modification; the applied voltage at the test point is 1000V DC, and an electrostatic potential probe is used to measure 10 times at room temperature and constant indoor humidity to obtain the average value of the area. The data examples obtained by simulation are shown in Table 1.

[0060] Table 1 Simulation data

[0061]

[0062] From Table 1, we can see that 10 The potential range increases from n1 to n1, indicating that the degree of charge accumulation will also increase. 10 To n1 for ion beam treatment surface modification.

[0063] After all modifications, the flashover performance test was conducted to compare with the unmodified pot insulator. A high voltage DC power supply was connected to the high voltage end, and the ground end was grounded until a flashover occurred. The flashover voltage was recorded ten times using an oscilloscope, and the average value was taken to draw a Weber curve.

[0064] Specifically, a modification system for improving the insulation performance of a pot-type insulator is also included, including:

[0065] Division module: divides the surface of the pot insulator into multiple radially equidistant annular areas;

[0066] Measurement module: measures the potential, surface conductivity and surface roughness of the pot-type insulator surface before modification, and shields the non-treated area;

[0067] Ion beam treatment module: Based on the potential, surface conductivity and surface roughness of the basin insulator surface before modification, ion beam treatment is sequentially performed on the high voltage end to the ground end of the annular region. The ion beam treatment optimizes the potential distribution by changing the conductivity and roughness, and modifies the basin insulator surface.

[0068] Test module: Conduct flashover performance test on pot-type insulators after ion beam treatment to verify the flashover performance of modified pot-type insulators.

[0069] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0070] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A modification method for improving the insulation performance of a pot-type insulator, characterized in that: include: Step 1: Divide the surface of the pot insulator into a plurality of radially equidistant annular regions; Step 2: Measure the potential, surface conductivity and surface roughness of the pot-type insulator surface before modification, and shield the non-treated area; Step 3: Based on the potential, surface conductivity and surface roughness of the basin insulator surface before modification, ion beam treatment is sequentially performed on the high voltage end to the ground end of the annular region, wherein the ion beam treatment optimizes the potential distribution by changing the conductivity and roughness, thereby modifying the basin insulator surface; Step 4: Conduct a flashover performance test on the pot-type insulator after ion beam treatment to verify the flashover performance of the modified pot-type insulator.

2. A modification method for improving the insulation performance of a pot-type insulator according to claim 1, characterized in that: In step 1, the pot-type insulator is equally divided into 10 circular ring areas, and the formulas for the length of the ring width and the area of ​​the longitudinally equally spaced ring areas are as follows: S n =π(R n 2 -R n-1 2 ) where d n is the width of the nth area from the high voltage end to the ground end; L is the radius of the basin insulator; S n is the area of ​​the nth region from the high voltage end to the ground end; R n is the average radius of the nth area from the high voltage end to the ground end.

3. A modification method for improving the insulation performance of a pot-type insulator according to claim 1, characterized in that: The potential measurement of the surface of the pot-type insulator before modification includes: applying a 1000V DC voltage, using an electrostatic potential probe to perform multiple measurements at a constant room temperature and humidity, and taking an average value to obtain the potential measurement result of the surface of the pot-type insulator before modification.

4. A modification method for improving the insulation performance of a pot-type insulator according to claim 1, characterized in that: The surface conductivity measurement process includes: applying a 1000V DC voltage, recording a time step of 3 minutes, performing multiple measurements at a constant room temperature and humidity, taking the average value and calculating the conductivity using the following formula: Where D1 is the diameter of the measuring electrode, D2 is the diameter of the guard electrode, in centimeters; V a and I a are the applied DC voltage and measured current, respectively.

5. A modification method for improving the insulation performance of a pot-type insulator according to claim 1, characterized in that: The surface roughness includes: arithmetic mean surface roughness Ra and root mean square surface roughness Rrms. The surface roughness is used to evaluate the flashover performance of the insulator.

6. A modification method for improving the insulation performance of a pot-type insulator according to claim 1, characterized in that: The gas used for the ion beam treatment is the inert gas argon Ar, and a terminal Hall ion source is used; The ion beam treatment process includes: increasing the vacuum pressure in the ion beam treatment chamber, applying an anode voltage and a cathode current to the ion source, generating high-energy argon Ar + Ion beam, using high energy argon Ar + The ion beam is directed to the modified area and high energy argon Ar is injected at different treatment times. + ion beam to obtain samples with different uniform surface conductivities.

7. A modification method for improving the insulation performance of a pot-type insulator according to claim 6, characterized in that: The high energy argon Ar + The ion beam current was kept at 1A or less.

8. A system applied to the method for improving the insulation performance of pot-type insulators according to any one of claims 1 to 7, characterized in that: include: Division module: divides the surface of the pot insulator into multiple radially equidistant annular areas; Measurement module: measures the potential, surface conductivity and surface roughness of the pot-type insulator surface before modification, and shields the non-treated area; Ion beam treatment module: Based on the potential, surface conductivity and surface roughness of the basin insulator surface before modification, ion beam treatment is sequentially performed on the high voltage end to the ground end of the annular region. The ion beam treatment optimizes the potential distribution by changing the conductivity and roughness, and modifies the basin insulator surface. Test module: Conduct flashover performance test on pot-type insulators after ion beam treatment to verify the flashover performance of modified pot-type insulators.

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