Resistor structure and voltage divider device
By increasing the thickness and coverage of the insulator element in the high-voltage resistor structure, the problem that the resistor structure is susceptible to electrical stress at high voltage is solved, the voltage withstandness and reliability of the resistor are improved, and a resistor structure with a higher working voltage and a smaller size is realized.
Patent Information
- Application Number
- CN202411633925.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-11-15
- Filing Date
- 2024-11-15
- Publication Date
- 2025-05-16
AI Technical Summary
In high voltage applications, resistor structures are susceptible to electrical stress and electrostatic strength, resulting in dielectric failure and insulation failure, such as partial discharge or electrical breakdown, affecting its manufacturing, reliability and safety.
A resistor structure is designed, including an electrically insulating substrate, a conductive terminal and a resistance path, which consists of a resistance trace on which the insulator element is arranged, and the thickness of the insulator element is at least 30% of the thickness of the resistance trace to provide additional insulation protection.
By increasing the thickness and coverage of the insulator element, the electrical insulation performance of the resistor structure is improved, the exposure of the resistor path to external mechanical stress is reduced, and the voltage withstandness and reliability is improved, allowing for a higher operating voltage and a smaller resistor structure.
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Figure CN120015446A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a resistor structure and a voltage divider arrangement and an electrical device comprising such a resistor structure and / or a voltage divider arrangement. Background Art
[0002] The resistor structure and the voltage divider arrangement are configured for use in high voltage applications, for example between 500 V and 1000 kV. Resistors used at high voltages have high resistances (for example greater than 100 kΩ) to limit power dissipation.
[0003] The resistor structure may include an electrically insulating substrate, at least one electrically conductive terminal applied to the substrate, and at least one resistive path applied to the substrate and joined to the terminal.
[0004] In its simplest embodiment, the voltage divider device may include two resistor structures electrically connected in series for converting a high voltage (so-called primary voltage) into a lower voltage (so-called secondary voltage). The secondary voltage is significantly less than the primary voltage, for example with a voltage division ratio of between 10 and 100,000. In more complex embodiments of the voltage divider, one or both of the series resistor structures may be replaced by a resistor network. The resistors or corresponding resistor networks may be referred to as high-ohm resistors and low-ohm resistors, respectively.
[0005] These devices can be integrated in electrical equipment in which particularly harsh operating conditions may occur, such as strong voltage overloads, power overloads, temperature changes, humidity changes, mechanical stress and shocks. Examples of electrical equipment are electronic instrument transformers (sensors), such as ABB's KEVCD and KEVA sensor types, which are typically used in power systems with rated primary voltages between 7.2 kV and 48 kV.
[0006] US 9,299,484 B2 discloses a resistor structure and a resistor voltage divider device, the contents of which are incorporated herein.
[0007] High voltage applications often require specific technical work to ensure functionality and safety. The reason is that such resistor structures are exposed to high electric field strengths, which often impose excessive electrical stress / static strength. This can lead to dielectric damage / insulation failures such as partial discharge or electrical breakdown.
[0008] Therefore, it is desirable to improve resistor structures and voltage divider arrangements with respect to manufacturing, reliability, and safety. Summary of the invention
[0009] The present invention relates to a resistor structure, comprising: at least one electrically insulating substrate; at least one, preferably two, electrically conductive terminals arranged directly or indirectly on the substrate; at least one resistive path, the resistive path comprising at least one resistive track arranged directly or indirectly on the substrate (optionally partially / segmentally) and directly or indirectly connected to the terminal, wherein the thickness of the resistive track is the thickness of the resistive track in a thickness direction away from the substrate. At least one insulator element is applied directly or indirectly on a part of the substrate, wherein the thickness of the insulator element is the thickness of the insulator element in a thickness direction away from the substrate, at least a part of the insulator element and a part of the resistive path / resistive track are arranged at least partially adjacent to each other and such that:
[0010] (a) if the resistive track / resistive path is substantially free of a coating having a thickness between 1 μm and 200 μm, preferably between 1 μm and 100 μm, optionally substantially free of any coating, the thickness of the insulator element is at least 30% of the thickness of the resistive track / resistive path, optionally greater than the thickness of the resistive track / resistive path,
[0011] and / or
[0012] (b) If the resistive track / resistive path is substantially covered with an insulating coating having a thickness between 1 μm and 200 μm, preferably between 1 μm and 100 μm, the combined thickness of the insulator element and the insulating coating exceeds the thickness of the insulating coating on the resistive track, optionally by at least 30%.
[0013] Referring to (a) above, the present invention may alternatively or additionally be characterized by the insulator element having a thickness greater than a percentage of the resistive trace thickness, wherein at least 50% of the trace width is not covered by the insulator element.
[0014] Referring to (b) above, the present invention may alternatively or additionally have the following feature: the thickness of the insulator element (or insulating film) next to the resistor trace is greater than the thickness of the insulator element above / on top of the resistor trace by at least a certain percentage of the thickness of the resistor trace.
[0015] The percentage of the resistive trace thickness may be at least 30%, preferably at least 50%, more preferably at least 100% of the resistive trace thickness.
[0016] According to the present invention, an electrically insulating element, i.e. an insulator element, is provided. The insulator element is arranged adjacent to (i.e. next to / immediately adjacent to) at least a portion of a resistive track or resistive path. When viewed along the surface of the substrate, the insulator element and the resistive track are at least partially adjacent to each other.
[0017] The insulator element of the present invention may be considered to at least partially fill the gaps or voids adjacent the resistive traces with additional insulating material.
[0018] If the resistor trace is substantially not covered by the coating and / or the insulating layer, the resistor trace can be considered to be substantially free of coating. This does not exclude that the edge portion of the resistor trace is overlapped by an insulator (e.g., a portion of an insulator element). For example, if the resistor trace is substantially not covered by the coating and / or the insulator, the insulator element / coating may not be bonded to each other on top of the resistor trace.
[0019] In some embodiments, the resistive path may be considered to be sunken below the insulator element. In some embodiments, at least the exposure of the resistive path to external influences and mechanical stresses may be reduced. In some embodiments, the insulator element may protrude from the resistive path in a direction away from the substrate. In some embodiments, the insulator thickness may be at least 30% of the thickness of the resistive trace.
[0020] The insulator element may protect the edges of the resistor path. Alternatively or additionally, the insulator element may protect at least a portion of the top of the resistor path from mechanical stress. Additionally or alternatively, the insulator element of the present invention may improve electrical insulation relative to the resistor path. This may reduce associated degradation and resistance drift. This, in turn, may improve accuracy and reliability, allowing higher operating voltages while reducing the size of the resistor structure and the voltage divider.
[0021] Therefore, the accuracy and voltage resistance of the resistor structure and the corresponding voltage divider arrangement can be improved.
[0022] The resistor materials commonly used in thick film technology are based on a formulation that mainly contains glass, conductive oxide ceramic particles (such as ruthenium oxide) and possibly other additives (such as metal particles). The resistivity (surface resistance / film resistance) of thick film resistor materials or multilayer films is usually between 50mΩ / square and 1GΩ / square.
[0023] In the context of the present invention, the resistive trace of the resistive path is made of a resistive material having a resistivity preferably between 50Ω / square and 100MΩ / square, or preferably between 500Ω / square and 10MΩ / square. Non-exhaustive examples of possible resistive materials are the R8700 series from Heraeus or the 2000 series from DuPont.
[0024] The conductive materials commonly used in thick film technology are based on formulations containing a large number of metal particles such as Ag, Pd, Au, Pt and possibly other additives. The resistivity of thick film conductor materials or multilayers is typically between 1 mΩ / square and 1 Ω / square. Non-exhaustive examples of possible conductive materials are C2210 from Heraeus or 7484 from DuPont.
[0025] The volume resistivity of the insulating material is greater than 10 7 Ω·cm.
[0026] The resistive path comprises one or more resistive tracks. If more resistive tracks are provided, the resistive tracks may be connected directly or indirectly and at least partially in series or in parallel.
[0027] Optionally, the resistive path comprises resistive traces which are electrically connected in series via a transition element to form the resistive path.The resistive traces may be at least partially parallel to each other.
[0028] Optionally, according to (b), the insulating coating at least partially covers the resistive path and / or the insulator element. Alternatively, the insulating coating may cover almost the entire substrate.
[0029] Optionally, according to (b), the coating is made of the same material as the insulator element, and / or wherein the coating thickness varies less than about 10% between coatings, or is substantially uniform.
[0030] Optionally, the insulator element comprises a plurality of insulator element parts, which are optionally spaced apart from each other and / or have substantially the same geometry as at least one resistive trace of the resistive path, wherein further optionally, each insulator element part is preferably in the form of (multiple) parallel strips. Such an embodiment enables efficient manufacturing.
[0031] Optionally, at least one insulator element is positioned beside at least a portion of the resistive path, optionally extending parallel to at least a portion of the resistive track. This enables effective protection of the resistive path by the insulator element.
[0032] Optionally, at least one insulator element is positioned perpendicular to a portion of the resistor path, optionally at a turn, corner or end point of the resistor path, further optionally outside the resistor path. This arrangement provides effective protection of the insulator element in a sensitive area of the resistor path.
[0033] Optionally, at least a portion of the resistor track is sandwiched between two insulator elements. This means that a portion of the resistor track is bounded on each lateral side by an insulator element. Protection from both sides, in particular from opposite sides, enables effective protection of the resistor path.
[0034] Optionally, an edge portion of the resistive track and a portion of the insulator element overlap in the thickness direction. Further optionally, the insulator element at least partially overlaps an edge of the resistive path so as to cover and protect the edge.
[0035] Optionally, the distance between the resistive trace and the insulator element is less than 25% of the width of the resistive trace and / or less than 150 μm. Placing the insulator element relatively close to the resistive path may improve protection.
[0036] Optionally, the insulator element is made of an inorganic insulating material including glass or ceramic, and / or has a denser structure (fewer or thinner grain boundaries and / or smaller voids) than the insulating substrate. This can improve the dielectric strength of the insulator element.
[0037] The width of the insulator element (part of the insulator element) may be approximately equal to or preferably less than the width of the resistor trace. This may provide the advantage of more efficient use of the insulator element, for example by reducing the use of other materials used to make the resistor structure.
[0038] Optionally, the dielectric strength of the insulator element is higher than the dielectric strength of the insulating substrate, and / or the dielectric constant and / or thermal expansion coefficient of the insulator element are substantially the same as the dielectric constant and / or thermal expansion coefficient of the insulating substrate. This can improve the dielectric strength and reliability of the resistor structure.
[0039] Optionally, the insulator element is a film, optionally a laminate of a plurality of films. One or more films allow for efficient application and integration with the manufacturing process.
[0040] Optionally, the insulator element is deposited by screen printing or direct printing by nozzle before or after the resistive path deposition. This supports efficient manufacturing.
[0041] Optionally, the insulator element is disposed adjacent to a joining element connecting the terminal, and / or adjacent to an interconnection element connecting at least two / at least two resistance traces of a resistance path with a portion of a terminal, and / or adjacent to an interconnection path connecting at least one end of a first resistance path and one end of a second resistance path with a portion of a terminal, wherein the resistance path includes at least the first resistance path and the second resistance path. These locations can provide more effective protection by the insulator element.
[0042] The resistor structure of the present invention can be manufactured using thick film technology, such as screen printing or template printing or direct printing by nozzle. The conductive material film and the resistive material film are sequentially deposited on an insulating substrate. Typically, a single layer of a single material is deposited, followed by subsequent steps, such as drying or firing. For example, the conductive film or the resistive film is fired at a very high temperature between 600°C and 950°C.
[0043] The insulating substrate may be made of a ceramic material, such as aluminum oxide or aluminum nitride. The insulating substrate may be in the form of a flat sheet or in the form of a cylinder.
[0044] In addition to the first conductive terminal, at least a second conductive terminal may typically be arranged in a resistive structure, wherein the resistive path connects the first terminal and the second terminal. In a voltage divider, a high ohmic resistor and a low ohmic resistor may share one terminal, so that the voltage divider arrangement may include at least a first terminal, a second terminal and a third terminal.
[0045] In addition to at least the first resistive path, the resistive path may include a second resistive path, wherein the paths are connected in series. A resistive path (or multiple resistive paths) may be at least partially in the form of a spiral. Therefore, the resistive path may extend at least partially in a spiral shape.
[0046] A covering / coating made of an electrically insulating material may be provided. In some embodiments, the covering may be the outermost entity or layer. The covering may cover the entire resistor structure or a portion thereof. The covering may cover at least a portion of the resistor path and may cover a portion or portions of one or more terminals. A portion of each terminal is preferably not covered by the covering in order to provide an electrical connection to the resistor structure. The covering may be a film and may be made to have a thickness between 5 and 100 μm and / or between 3 and 30 μm. The covering may have different thicknesses, optionally with a first thickness between 5 and 100 μm and a second thickness between 3 and 30 μm, wherein the first thickness is at least 50% or at least 5 μm greater than the second thickness.
[0047] Optionally, a second coating material, for example made of a polymer, may be applied over the first coating material. The second coating material may be thicker than the first coating material.
[0048] A shunt may be provided. A shunt segment is constructed to shunt different parts of a resistive trace to proportionally reduce its effective resistive length. This may mean that the electrically effective length (and therefore determining the resistance of the trace) is shorter than the actual length of the trace. The transition element may be a shunt segment. The resistivity of the shunt segment is lower than the resistivity of the resistive trace to which the shunt segment (e.g., transition element) is connected.
[0049] Optionally, the resistor structure comprises substantially identical resistor traces, and preferably arranged periodically with substantially the same pitch. The resistor traces may be made of the same resistor material, and may mostly have the same thickness, width, slope and (actual) length. This facilitates efficient and reproducible manufacture of the resistor traces and resistor paths.
[0050] The voltage divider device of the present invention may include a high-ohmic resistor and a low-ohmic resistor electrically connected in series, wherein the voltage divider device includes at least one resistor structure according to the present invention. The high-ohmic resistor is formed by one or more resistor tracks, the low-ohmic resistor is formed by one or more resistor tracks, and the resistances of the high-ohmic and low-ohmic resistors are different.
[0051] Optionally, the voltage divider device is provided on the same substrate and comprises substantially identical resistive traces and substantially identical insulator elements, wherein preferably the resistive traces and insulator elements are arranged in a substantially periodic manner. This may provide a device that is more efficient to manufacture and less prone to failure.
[0052] The electrical device of the present invention comprises the resistor structure or the voltage divider arrangement of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0053] Figure 1 A schematic plan view of a resistor structure of the present invention is shown.
[0054] Figure 2 A top view of a planar resistor structure of the present invention is shown.
[0055] Figure 3 A cross-sectional view of a resistor structure of the present invention is shown, wherein Figure 3 (a) to Figure 3 (d) shows a different embodiment.
[0056] Figure 4 A cross-sectional view of another resistor structure of the present invention is shown.
[0057] Figure 5 A cross-sectional view of a resistor structure of the present invention is shown, wherein Figure 5 (a) and Figure 5 (b) relates to different embodiments.
[0058] Figure 6 A plan view of a voltage divider arrangement is shown.
[0059] Figure 7 A perspective view of a voltage divider device having a cylindrical base is shown, wherein Figure 7 (a) and Figure 7 (b) shows views from different angles. DETAILED DESCRIPTION
[0060] Figure 1 Schematically a resistor structure 1 is shown with a first terminal 4-1 and a second terminal 4-2. The terminals are arranged on a substrate 2. Furthermore, a resistive path 3 is applied to the substrate 2. The resistive path 3 extends between the first terminal 4-1 and the second terminal 4-2. Figure 1 In the embodiment of the present invention, the insulator element 6 having two parts is positioned in the vicinity of the resistor path 3, i.e. adjacent to or adjacent to the resistor path 3. As shown in this example, the insulator element 6 can laterally clamp at least a part of the resistor path 3 so as to improve the protection of the resistor path 3 by the insulator element 6.
[0061] Figure 2The planar resistor structure 1 is shown with details of the resistor path 3 and the insulator element 6. In particular, the resistor path 3 comprises at least one resistor track 8 forming a turn 10. Figure 2 In the embodiment of FIG. 6 , the individual parts 6 a of the insulator element 6 are shown. More specifically, the (multiple) parts 6 a of the insulator element are separated from each other. The insulator element parts 6 a may have the same geometric shape, i.e. Figure 2 . These strips are parallel to each other and to the resistor tracks 8. Each resistor track 8 can be considered to be sandwiched laterally between two insulator elements 6. Further insulating element portions 6a, also in the form of strips, are positioned perpendicular to the course of the resistor tracks 8 positioned adjacent to the turns 10. These portions 6a are arranged outside the resistor path 3 and surround the entire resistor path 3 between them.
[0062] Figure 3 An embodiment of the resistor structure 1 of the present invention is shown in which the resistor trace 8 and most of the remaining resistor structure 1 are free of any coating material. The thickness is shown relative to the thickness direction D, ie the direction away from the substrate 2. The thickness t of the insulator element 6 i is at least the thickness t of the resistor track 8 r For example, in Figure 3 In (a), the thickness t of the insulator element 6 is i Greater than the thickness t of the resistor trace 8 r .exist Figure 3 In (b), the thickness t of the insulator element 6 i Greater than the thickness of the resistor trace t r , where the edge of the resistor track 8 is overlapped by the insulator element 6. Figure 3 As shown in (c), at one edge of the resistor track 8, the insulator element 6 overlaps the resistor track 8. Therefore, a portion of the resistor path 3 and a portion of the insulator element 6 overlap in the thickness direction D. On the opposite edge of the resistor track 8 along the width direction of the resistor track 8, there is no overlap between the insulator element 6 and the resistor track 8. On the contrary, Figure 3 In (c) , the presence of a gap can be seen. The distance between the resistor track 8 and the adjacent insulator element 6 may be less than 25% of the width of the resistor track 8 and / or less than 150 μm. Figure 3 (d) shows an embodiment in which the insulator element 6 is thicker than the resistor trace 8 and the insulator element 6 has an indentation / recess near the overlap with the resistor trace 8 .
[0063] Figure 4 An embodiment is shown in which two mutually adjacent insulator elements 6a together form the insulator element 6. A plurality of insulator elements 6a may form the insulator element 6. In this example, the thickness t of the insulator element 6 is iGreater than the thickness t of the resistor trace 8 r .
[0064] Figure 5 An embodiment with a covering material 9 is shown. The covering material 9 is arranged on top of the insulator element 6 and (most of) the remaining resistor structure 1. The thickness of the covering material 9 is between 1 μm and 200 μm and is substantially uniform. The thickness t of the covering material 9 is c The variation between coating materials 9 is less than about 10%. Figure 5 As shown in (a), the coating is disposed on top of the resistor trace 8 and the adjacent insulator element 6. The insulator element 6 is beneath the coating 9 and can be considered to be "buried" or "hidden" beneath the coating 9. The insulator element 6 may no longer be discernible from the coating 9. What remains discernible is the total thickness of the combination of the coating 9 and the insulator element 6 in the thickness direction D. The thickness of the coating 9 plus the total thickness of the insulator element 6 tt i corresponds at least to the thickness of the insulator immediately adjacent to the resistor track 8. The total thickness tt i The thickness t of the insulating coating 9 above the top of the resistor track 8 is c On top of the resistive track 8, only the insulating cover material 9 is provided, without the insulator element 6 of the present invention. Therefore, the insulator element 6 can help to level the entire surface, for example, by reducing the height difference between the portion of the cover material 9 under which the resistive track 8 is formed and the portion under which the resistive track 8 is not formed.
[0065] Figure 5 (b) shows an embodiment in which the thickness t of the insulator element 6 is i exceeds the thickness t of the resistive track 8 r In addition, the total thickness of the combination of the insulator element 6 and the insulating coating 9 is tt i Exceeding the thickness t of the insulating coating 9 on the resistor track 8 c At least 30%, here more than about 300%. In this embodiment, when the height / thickness of the insulator element 6 exceeds the height / thickness of the resistor track 8, the resistor track 8 is protected by the insulator element 6 protruding from the remaining substrate 2.
[0066] Figure 6A voltage divider device 5 having a flat substrate 2 is shown. An insulator element 6 is arranged in close proximity to a junction element 14 connecting the start of a resistance path 3 with a first terminal 4-1. Furthermore, in the vicinity of an interconnection element 13 connecting a plurality of resistance tracks 8 to a terminal, here to the third terminal 4-3, an insulator element 6 is provided. The insulator element 6 extends substantially perpendicularly to the interconnection element 13. Furthermore, in the vicinity of an interconnection path 15 connecting at least one end of the first resistance path 3-1 and the second resistance path 3-2 with a terminal, here to the second terminal 4-2, an insulator element 6 is provided. These insulator elements 6 extend at least partially parallel to the interconnection path 15 and at least partially perpendicular to the interconnection path 15. All insulator elements 6 of the voltage divider device 5 may be identical and positioned parallel to each other.
[0067] Figure 7 A voltage divider device 5 is shown having a cylindrical base 2 and a spiral resistive path 3. The path 3 comprises a first resistive path 3-1 of a high ohmic resistor 11 and a second resistive path 3-2 of a low ohmic resistor 12 connected in series. A first terminal 4-1 is positioned opposite a second terminal 4-2 and a third terminal 4-3. Figure 7 Also shown are a joining element 14 for connecting the track 8 and the first terminal 4 - 1 , and a transition element 7 connecting two subsequent resistor tracks 8 to each other.
[0068] exist Figures 1 to 4 In the embodiment shown, no covering material is provided. Figure 6 and Figure 7 The embodiment of has no coating material. However, in Figure 5 In the embodiment of the present invention, there is a coating 9. For any embodiment of the present invention, the coating 9 of the present invention can be added. In addition, it is conceivable that a so-called conformal coating / conformal coating with a thickness of about 1 mm can be added. The coating 9 can be an insulating coating with a thickness of about 1 to 200 μm, preferably 1 to 100 μm. Therefore, the conformal coating is different from the coating 9 of the present invention. The coating 9 can be made of an insulating material and made of the same material as the insulator element 6 of the present invention. In the final product, the coating 9 of the present invention and the insulator element 6 may be difficult to distinguish or indistinguishable.
[0069] In any embodiment, the insulator element 6 may be a film. Alternatively, the insulator element 6 may be formed of a laminate of a plurality of films, which are arranged to be stacked on top of each other.
[0070] Any insulator element 6 of the present invention may be made of an inorganic insulating material. The dielectric strength of the insulator element 6 is generally higher than the dielectric strength of the insulating substrate 2, and / or the dielectric constant and / or thermal expansion coefficient of the insulator element 6 is substantially the same as the dielectric constant and / or thermal expansion coefficient of the insulating substrate 2. The resistor structure 1 of the present invention may be deposited by screen printing. This may be done before or after the deposition of the resistor trace 8.
[0071] Reference numerals
[0072] 1 Resistor / resistor structure
[0073] 2 Electrically insulating substrate
[0074] 3 Resistor Path
[0075] 3-1 The first resistance path
[0076] 4 terminals
[0077] 4-1 First terminal
[0078] 4-2 Second terminal
[0079] 4-3 The third terminal
[0080] 6 Insulator components
[0081] 6a Insulator component part
[0082] 7 Transition Elements
[0083] 8 Resistor traces
[0084] 9 Covering
[0085] 10Resistance path turn
[0086] 11 High Ohm Resistors
[0087] 12 low ohm resistors
[0088] 13Interconnection components
[0089] 14Joint elements
[0090] 15 Interconnection Paths
[0091] t i Thickness of insulator element
[0092] t r Thickness of the resistor trace
[0093] tt i The total thickness of the insulating layer on top of the substrate
[0094] t c Thickness of coating
[0095] D Thickness direction
Claims
1. A resistor structure (1), the resistor structure comprising at least: an electrically insulating substrate (2), at least one conductive terminal (4) disposed directly or indirectly on the substrate (2), At least one resistance path (3), the resistance path comprising at least one resistance trace (8), the resistance trace being directly or indirectly arranged on the substrate (2) and directly or indirectly connected to the terminal (4), wherein the thickness (t r ) is the thickness of the resistor trace (8) in the thickness direction (D) away from the substrate (2), characterized in that: At least one insulating element (6) is applied directly or indirectly and at least partially to the substrate (2), wherein the thickness (t i ) is the thickness of the insulator element in the thickness direction (D) facing away from the substrate (2), and At least a portion of the insulator element (6) and a portion of the resistive path (3) are arranged at least partially adjacent to each other, and such that: (a) If the resistive trace (8) has substantially no thickness (t c ) between 1 μm and 200 μm, preferably between 1 μm and 100 μm, of the coating (9), optionally substantially without any coating, the thickness of the insulator element (t i ) is the thickness of the resistor trace (8) (t r ), optionally the thickness of the insulator element (t i ) is greater than the thickness (t r ), and / or (b) If the resistive trace (8) is substantially covered with a thickness (t c ) between 1 μm and 200 μm, preferably between 1 μm and 100 μm, the total thickness (tt i ) exceeds the thickness (t c ), optionally exceeding by at least 30%.
2. The resistor structure according to claim 1, wherein: According to (b), the insulating coating (9) at least partially covers the resistive path (3) and / or the insulator element (6), and / or the insulating coating (9) is selectively applied.
3. The resistor structure according to claim 2, wherein: According to (b), the covering material (9) is made of the same material as the insulator element (6).
4. A resistor structure according to any one of the preceding claims, wherein: The insulator element (6) comprises a plurality of insulator element parts (6a), which are optionally spaced apart from each other and / or have a geometry substantially identical to that of at least one resistive track (8) of the resistive path (3), wherein, further optionally, each insulator part (6a) is preferably in the form of parallel strips.
5. A resistor structure according to any one of the preceding claims, wherein: At least one insulator element (6) is positioned beside at least a portion of the resistive path (3), optionally extending parallel to at least a portion of the resistive track (8).
6. A resistor structure according to any one of the preceding claims, wherein: The resistive path is at least partially shaped as a spiral, the insulator element is at least partially arranged between turns of the resistive path, and / or the insulator element is at least partially shaped as a spiral.
7. A resistor structure according to any one of the preceding claims, wherein: When viewed along a surface parallel to the substrate (2), at least a portion of the resistive track (8) is sandwiched between two insulator elements (6).
8. A resistor structure according to any one of the preceding claims, wherein: The edge of the resistor trace (8) and a portion of the insulator element (6) overlap in the thickness direction (D).
9. A resistor structure according to any one of the preceding claims, wherein: The distance between the resistor track (8) and the insulator element (6) is at least locally smaller than 25% of the width of the resistor track (8) and / or smaller than 150 μm.
10. A resistor structure according to any one of the preceding claims, wherein: The insulator element (6) is made of an inorganic insulating material including glass.
11. A resistor structure according to any one of the preceding claims, wherein: The insulator element portion (6a) is disposed between the resistor traces (8), and preferably between the resistor traces (8) and the terminals (4), wherein the insulator element portion (6a) and the resistor traces (8) preferably have substantially equal lengths and slopes.
12. A resistor structure according to any one of the preceding claims, wherein: The insulator element (6) is a film, optionally a laminate composed of a plurality of films.
13. A resistor structure according to any one of the preceding claims, wherein: Before or after depositing the resistive path (3), the insulator element (6) is deposited by screen printing.
14. A resistor structure according to any one of the preceding claims, wherein: The insulator element (6) is arranged adjacent to the engagement element (14) of the connection terminal, and / or adjacent to an interconnection element (13) connecting at least two resistive traces (8) of the resistive path (3) and a portion of the terminal (4-2), and / or An interconnection path (15) is adjacent to at least one end of a first resistance path (3-1) and one end of a second resistance path (3-2) and a portion of a terminal (4-2), wherein the resistance path (3) includes at least the first resistance path (3-1) and the second resistance path (3-2).
15. A voltage divider device (5) for a power system for voltage conversion, the voltage divider device comprising a first resistor structure (1) and a second resistor structure (1), the first resistor structure being a resistor structure according to any one of the preceding claims, and the second resistor structure being a resistor structure according to any one of the preceding claims, wherein: The first resistor structure and the second resistor structure are connected in series, and the first resistor structure and the second resistor structure have different resistances.
16. A voltage divider arrangement according to claim 15, said voltage divider arrangement being arranged on a same substrate (2) and comprising substantially the same resistive tracks (8) and substantially the same insulator elements, wherein Preferably the resistive tracks (8) and insulator elements (6) are arranged in a substantially periodic manner.
17. An electrical device comprising a resistor structure (1) according to any one of claims 1 to 14 and / or a voltage divider arrangement (5) according to claim 15 or 16.
Citation Information
Patent Citations
Resistive structure and resistive voltage divider arrangement
US9299484B2