Method of operating particle beam apparatus, computer program product and particle beam apparatus

Abstract

The invention relates to a method for operating a particle beam apparatus for processing, imaging and / or analyzing an object, a computer program product and a particle beam apparatus for carrying out the method. In a first mode of operation of a particle beam apparatus, a first image of an object is generated using a "rocking beam" method. Further, in a second mode of operation of the particle beam apparatus, a second image of the object is generated using a "rocking beam" method. A control device is now used to set (i) the position of a diaphragm unit and / or the size and / or shape of an opening of the particle beam device and / or (ii) at least one electrostatic and / or magnetic deflection unit of the particle beam device in order to displace the scanning region, a first irradiation direction of the particle beam in the direction of the site on the surface of the object corresponds to a second irradiation direction of the particle beam in the direction of the site on the surface of the object, the first irradiation direction being determined on the basis of the first image, and the second irradiation direction being determined on the basis of the second image.

Description

Technical Field

[0001] The present invention relates to a method for operating a particle beam device for processing, imaging and / or analyzing an object. The present invention also relates to a computer program product and a particle beam device for performing the method. For example, the particle beam device is implemented as an electron beam device and / or an ion beam device. Background Art

[0002] Electron beam devices, in particular scanning electron microscopes (hereinafter also referred to as SEM) and / or transmission electron microscopes (hereinafter also referred to as TEM), are used to examine objects (hereinafter also referred to as samples) to learn about their properties and behavior under certain conditions.

[0003] In SEM, an electron beam (hereinafter also referred to as a primary electron beam) is generated by a beam generator and focused on the object to be inspected by a beam guiding system. The primary electron beam is guided on the surface of the object to be inspected by a deflection device in the form of a scanning device. In the process, the electrons of the primary electron beam interact with the object to be inspected. As a result of the interaction, specifically, electrons (so-called secondary electrons) are emitted by the object, and the electrons of the primary electron beam are backscattered (so-called backscattered electrons). Secondary electrons and backscattered electrons are detected and used for image generation. Thus, an image representation of the object to be inspected is obtained. In addition, interaction radiation (e.g., x-ray radiation or cathode luminescence) is generated during the interaction, and the interaction radiation is detected by a detector and subsequently evaluated in order to analyze the object.

[0004] In the case of TEM, a primary electron beam is also generated by a beam generator, and the primary electron beam is guided onto the object to be inspected by a beam guiding system. The primary electron beam passes through the object to be inspected. When the primary electron beam passes through the object to be inspected, the electrons of the primary electron beam interact with the material of the object to be inspected. The electrons passing through the object to be inspected are imaged on a fluorescent screen or a detector (such as a camera) by a system consisting of an objective lens and a projection unit. Here, imaging can also be performed in the scanning mode of the TEM. Usually, this type of TEM is called STEM. In addition, another detector can be provided to detect electrons backscattered at the object to be inspected and / or secondary electrons emitted by the object to be inspected, so as to image the object to be inspected.

[0005] It is known to combine the functions of STEM and SEM in a single particle beam device. Thus, such a particle beam device can be used to examine an object using the SEM function and / or the STEM function.

[0006] In addition, particle beam devices with ion beam columns are known. Ions for processing an object are generated by an ion beam generator arranged in the ion beam column. For example, during processing, the material of the object is ablated, or material is applied to the object, for example in the case of a gas supply. In addition or in an alternative, the ions are used for imaging.

[0007] In addition, the prior art discloses the use of combined devices for inspecting objects, wherein both electrons and ions can be directed onto the object to be inspected. For example, it is known to equip the SEM with an ion beam column in addition. An ion beam generator arranged in the ion beam column is used to generate ions for preparing the object (e.g. ablating the material of the object or applying material to the object) or for imaging. For this purpose, a deflection device in the form of a scanning device is used to scan the ions over the object. The SEM is used here specifically for observing the preparation, but also for further inspection of the prepared or unprepared object.

[0008] When generating the image of an object, a particle beam device can be used to image the object with high spatial resolution. Specifically, this is achieved by using a very small primary electron beam in the plane of the object. In addition, the higher the electrons of the primary electron beam are initially accelerated in the particle beam device, and are decelerated to the desired energy (called landing energy) in the object lens or in the region of the object lens and the object at the end, the better the spatial resolution. For example, an accelerating voltage of 2kV to 30kV is used to accelerate the electrons of the primary electron beam and guide it through the electron beam column of the particle beam device. The electrons of the primary electron beam are decelerated to the desired landing energy only in the region between the object lens and the object, and these electrons are incident on the object with the desired landing energy. For example, the landing energy of the electrons in the primary electron beam is in the range between 10eV and 30keV.

[0009] In order to make particle beam carry out raster scanning on object, it is known that scanning device is arranged on particle beam equipment.For example, scanning device comprises the first guiding device in the form of first deflection device and the second guiding device in the form of second deflection device, wherein, the first deflection device and the second deflection device are arranged successively along the optical axis of particle beam equipment.By combining the deflection of particle beam that can be realized by the first deflection device and the second deflection device, the position displacement of the virtual inclination point of particle beam along the optical axis of particle beam equipment can be made, wherein, the deflection looks almost as generated by the inclination around this inclination point.

[0010] The prior art has disclosed a method for imaging defects in crystalline materials. The method is called "electron channeling contrast imaging" (hereinafter also referred to as ECCI). The known method is based on the electron channeling effect and the electron diffraction effect that occurs when a primary electron beam passes through the lattice of an object. Depending on the direction of the primary electron beam relative to the lattice, the number of electrons backscattered by the object changes. The defects in the lattice can be determined by recording the image generated by the backscattered electrons. To record the image, the primary electron beam is scanned over the object.

[0011] ECCI can be combined with other methods known from the prior art. Other known methods are called "rocking beams". In other known methods, (i) a primary electron beam is swept through a certain angle range and (ii) a primary electron beam is directed to a predefined position on the surface of an object. A two-stage guide device is used for this purpose. First, a first guide device in the form of a first deflection device is used to turn the primary electron beam away from the optical axis of the particle beam device. Subsequently, a second guide device in the form of a second deflection device is used to turn the primary electron beam back to the optical axis. Other known methods can also be described as follows. A primary electron beam is directed to a certain position of a scanning area on the surface of an object, wherein (i) a first guide device for guiding the primary electron beam and (ii) a second guide device for guiding the primary electron beam are used. When viewed from the beam generator in the direction of the object, the first guide device is arranged in front, followed by the second guide device. The first guide device turns the primary electron beam away from the optical axis at a first angle relative to the optical axis. The second guide device turns the primary electron beam back toward the direction of the optical axis at a second angle relative to the optical axis. The first angle and the second angle can be the same. When the primary electron beam is directed to a certain position in the scanning area, the first angle passes through a first predeterminable value range, and the second angle passes through a second predeterminable value range.

[0012] When creating an image of an object, the user of the particle beam device pays attention to obtaining the best image quality of the object image required for inspecting the object. In other words, the user always wants to create an object image with the following high image quality: the image quality enables the user to analyze the object to be inspected well due to the image and the image information contained therein. In this context, for example, the image quality can be determined by objective criteria. Specifically, the image quality of the image improves with the increase of resolution or the increase of contrast in the image. Alternatively, the image quality can be determined based on subjective criteria. In this case, the user individually determines whether the image quality obtained is sufficient for them. However, in this case, it is entirely possible that the first user thinks that the sufficient image quality is not enough for the second user. For example, the image quality of the object image can also be determined based on the signal-to-noise ratio of the detector signal. In the case of a signal-to-noise ratio in the range of 0 to 5, the image quality is not high enough. For example, a signal-to-noise ratio in the range of 20 to 40 is called a good signal-to-noise ratio (and therefore also a good and sufficient image quality). The direction of the secondary particle beam (i.e., a particle beam containing secondary electrons and / or backscattered electrons) can also be a measure of image quality. This will be explained in more detail below. Secondary electrons can be emitted from an object at different solid angles. Further, backscattered electrons can be backscattered at different solid angles at the object. The direction of the secondary particle beam (that is, the solid angle at which the secondary particle beam extends) can be affected by the inclination of the primary electron beam and / or the object relative to the optical axis of the particle beam device. First, this allows the direction of the secondary particle beam to be selected so that the secondary particle beam is incident on the desired detector. Secondly, both the number of generated secondary electrons and the number of backscattered electrons can be affected by the aforementioned inclination. For example, if the primary electron beam enters the object in a manner parallel to the lattice of the object, the number of secondary electrons and / or backscattered electrons is reduced. The detection signal becomes weaker. Due to the poor signal-to-noise ratio, this leads to a decrease in image quality. The number of secondary electrons and backscattered electrons can be increased by setting the inclination of the primary electron beam. Using this setting, a crystal with a first orientation and a crystal with a second orientation can be distinguished based on the intensity of the detection signal.

[0013] The user of the known most advanced particle beam device selects the appropriate operating mode of the particle beam device, in order to obtain a good image quality of the object image generated by the particle beam device and / or a good representation of the detection signal based on the detected interaction radiation. For example, the user first selects the desired landing energy of the charged particles incident on the object. After this, the user selects the setting of the control parameters of the functional unit of the particle beam device. For example, the control parameter is a physical quantity, in particular a control current or a control voltage, and also for example a ratio of the physical quantity, in particular a magnification of the physical quantity. The value of the physical quantity can be set on at least one control device and control and / or supply the functional unit of the particle beam device so that the desired physical effect is obtained, for example, some magnetic fields and / or electrostatic fields are generated. The example of the control parameters of at least one control device for controlling at least one functional unit of the particle beam device is further explained in more detail below.

[0014] In order to obtain a desired quality of a first image of an object or a first data representation about the object, it is known to control a functional unit of a particle beam device using a first value of a control parameter.

[0015] In order to obtain the desired quality of the second image of the object or the second data representation about the object, it is known to use the second value of the control parameter to control the functional unit of the particle beam device. In other words, first when generating the first image of the object or the first data representation about the object, and secondly when generating the second image of the object or the second data representation about the object, specifically use the control device to control the functional unit of the particle beam device using the different values ​​of the control parameter. For example, compared with when generating the data representation about the object, when generating the image of the object, the object is arranged at a shorter distance from the object lens of the particle beam device. The distance between the object and the object lens is also referred to as the working distance. In other words, compared with when generating the data representation about the object, when generating the image of the object, the object is arranged at a shorter working distance from the object lens of the particle beam device. In addition or in an alternative, it is known to use a particle beam current of about several nanoamperes when generating the image of the object. On the other hand, it is known to use a particle beam current of about several microamperes when generating the data representation about the object.

[0016] With regard to the prior art, reference is made to DE 11 2016 005 577 B4 and US 2020 / 0013581 A1.

[0017] The particle beam device can be operated in a first operating mode or in a second operating mode. For example, the first operating mode is provided by controlling the functional unit of the particle beam device using a first value of a control parameter using a control device. In addition, the second operating mode is provided, for example, by controlling the functional unit of the particle beam device using a second value of a control parameter using a control device. Different operating modes may cause the particle beam of the particle beam device to be directed to the object along different optical axes. For example, in the first operating mode, the particle beam is directed along a first beam path. In addition, in the second operating mode, the particle beam is directed along a second beam path. The first beam path and the second beam path may be different. This may cause the particle beam to be directed to a different position in the first operating mode than in the second operating mode. This is usually undesirable. Summary of the invention

[0018] The problem addressed by the invention is to provide a method, a computer program product and a particle beam device by means of which different beam paths resulting from different operating modes of the particle beam device can be aligned or merged with one another.

[0019] According to the invention, this problem is solved by a method having the features described below. The features described below provide a computer program product having a program code for controlling a particle beam device to perform the method. In addition, the features described below provide a particle beam device for imaging, analyzing and / or processing an object. Further features of the invention will become clear from the following description, the attached claims and / or the accompanying drawings.

[0020] The method according to the present invention is used to operate a particle beam device for processing, imaging and / or analyzing an object. The particle beam device comprises at least one beam generator for generating a particle beam with charged particles. In this respect, in the method according to the present invention, the particle beam is generated by the beam generator. For example, the charged particles are electrons or ions. In addition, the particle beam device, for example, comprises an objective lens for focusing the particle beam on the object.

[0021] The method according to the present invention is arranged to use the control device of the particle beam device to select at least one value of at least one control parameter, so as to control at least one functional unit of the particle beam device. The functional unit should be understood as any structural unit of the particle beam device that can be set in any way both above and below. For example, the position of the functional unit in the particle beam device can be set. In addition or in an alternative, the electrostatic and / or magnetic embodiment of the functional unit is set to be set so as to intentionally affect the guidance of the particle beam in the particle beam device and / or the shape of the particle beam. The present invention is not limited to the aforementioned setting options. Instead, the functional unit can be set in any way suitable for the present invention. In addition, for example, the functional unit is set to be formed as a single functional unit or include a plurality of functional units.

[0022] For example, the control parameter is a physical quantity, in particular a control current or a control voltage, and is also for example a ratio of a physical quantity, in particular a magnification of a physical quantity. The value of the physical quantity can for example be set on a control unit or a control unit can be used to set and control and / or supply a functional unit of a particle beam device so that a desired physical effect is produced, for example a specific magnetic field and / or an electrostatic field is generated.

[0023] Examples of control parameters are explained in detail below.

[0024] The first control parameter is used to set the so-called landing energy of the charged particles of the particle beam on the object. The charged particles have this landing energy when incident on the object. In other words, the landing energy of the charged particles is the energy for inspecting and / or imaging the object. The landing energy of the charged particles can be different from the energy of the beam column that guides the charged particles through the particle beam device. Specifically, the charged particles are first accelerated very strongly and decelerated to the landing energy just before incident on the object. This will be explained in further detail below. For example, the landing energy of the charged particles is in the range of from 1eV to 30keV, including the range boundaries. In the imaging mode of generating an image of an object, a landing energy of less than 1keV is preferably used. For example, in the analysis mode of generating data about an object by x-ray radiation, a landing energy in the range of 10keV to 20keV is preferably used. However, the present invention is not limited to the aforementioned landing energy range. Instead, any range suitable for the present invention can be used in the present invention.

[0025] The second control parameter is used, for example, to control an objective of the particle beam device, which is used to set the focus of the particle beam on the object.

[0026] The third control parameter is used to center the particle beam in the objective lens. For example, the control device is used to set an electrostatic and / or magnetic unit of the particle beam device, by which the centering of the particle beam in the objective lens is set.

[0027] In addition, the image quality of the image of the object and / or the quality of the representation of the detection signal based on the detected interaction radiation (i.e., the data representation about the object) is affected by a fourth control parameter, which is used to control and set the electrostatic and / or magnetic deflection unit used in the particle beam device for so-called "beam shift". Therefore, the position of the scanning area on the object can be set and the scanning area can be optionally shifted to the desired position. This can be achieved without using a sample carrier on which the object is arranged. For example, if a change in the setting on the particle beam device causes the scanning area to migrate out of the actual area of ​​the object observed by the particle beam device, then in the case of "beam shift", due to the translational movement, the particle beam is shifted so that the raster scanning area is again located in the desired observation area.

[0028] The stigmator used in the particle beam device can also influence the image quality of the image of the object and / or the quality of the representation of the detection signal based on the detected interaction radiation. The stigmator (magnetic and / or electrostatic multipole element) is specifically used to correct the astigmatism. The stigmator can be set by the control device via a fifth control parameter.

[0029] However, the image quality of the image of the object and / or the quality of the representation of the detection signal based on the detected interaction radiation may also be affected by the position of the mechanically displaceable unit of the particle beam device. For example, the sixth control parameter can be used to set the position of the mechanically displaceable unit of the particle beam device. For example, the image quality is affected by the position of the aperture diaphragm used to shape and define the particle beam in the particle beam device. In an alternative or in addition, the position of the adjustable sample carrier on which the object is arranged is modified. For example, the distance between the object and the object lens of the particle beam device can be set then. This distance is referred to as the working distance. If the particle beam device is used to image the object (that is, in the imaging mode), the working distance is, for example, in the range of 1mm or less than 1mm. If X-ray spectroscopy is performed, the working distance is, for example, in the range of greater than 1mm, for example, between 2mm and 10mm.

[0030] The image quality of the image of the object and / or the quality of the representation of the detection signal based on the detected interaction radiation may be further affected by the so-called scanning rotation. The scanning rotation is the rotation of the scanning area around the optical axis of the particle beam device on the plane of the raster scanning area. For example, the scanning rotation can be set using the seventh control parameter.

[0031] Utilize the eighth control parameter, the functional unit of the particle beam device can be set so that the current of the particle beam can be set. For example, the functional unit is implemented as an objective lens, an aperture diaphragm and / or a bunching lens. In order to generate the image of the object, a particle beam current of about several picoamperes is used. This particle beam current is preferred in the imaging mode. On the other hand, when generating data representation about the object, a particle beam current of about several nanoamperes is used. This particle beam current is preferred in the analysis mode.

[0032] Utilize the ninth control parameter, the functional unit of particle beam equipment can be set so that high vacuum or pressure almost corresponding to atmospheric pressure is dominant in the sample chamber of particle beam equipment. For example, the ninth control parameter is set to control the pump arranged on the sample chamber. Specifically, the sample chamber operates within the first pressure range or within the second pressure range. The first pressure range only includes less than or equal to 10 -3 hPa pressure, the second pressure range only includes pressures greater than 10 -3 hPa pressure. The sample chamber is vacuum-tight in order to ensure these pressure ranges. If it is determined that firstly the sample chamber operates within a first pressure range and secondly the object is charged due to the particle beam being directed to the object, the ninth control parameter is modified so that the sample chamber operates within a second pressure range. Within the second pressure range, a gas, for example with ions, is then directed to the object so that the charge of the object on the surface of the object is neutralized. For example, the object becomes charged when the image of the object is unstable, in particular when the brightness and / or contrast of the image of the object changes when the same area of ​​the object is scanned multiple times. For example, the object may also become charged if the same features are still visible after the scanning rotation has changed the scanning direction in the image and / or if the position of the object in the image changes. In addition or in an alternative, the charge of the object is identified, for example, by comparing the image of the object with another image of the object from a database, the other image showing the object with a charge.

[0033] The method according to the invention is now provided with a control device to control the functional unit using the value of a control parameter. This control causes the particle beam to be directed from a beam generator toward the direction of the object along a first beam path of the particle beam device. Accordingly, when the functional unit is controlled by the value of the control parameter, the particle beam device operates in a first operating mode.

[0034] In addition, the method according to the present invention comprises using a first guiding device and a second guiding device to guide the particle beam to guide the particle beam to a predetermined position of the scanning area on the surface of the object. When viewed from the beam generator in the direction of the object, the first guiding device is arranged in front of the particle beam device and / or therein, followed by the second guiding device. For example, the first guiding device is implemented as a first deflection device. The first deflection device is specifically implemented as an electrostatic and / or magnetic deflection device. Further, for example, the second guiding device is implemented as a second deflection device. The second deflection device is specifically implemented as an electrostatic and / or magnetic deflection device. The first guiding device is arranged according to the method of the present invention to guide the particle beam away from the optical axis at a first angle relative to the optical axis of the particle beam device. In this case, in the above and below, the optical axis should be understood to refer to the axis of the object lens of the particle beam device, for example, when not experiencing the deflection (focusing) from the field, the particles of the particle beam travel along the axis of the object lens of the particle beam device, for example. In addition, the second guiding device is arranged according to the method of the present invention to guide the particle beam towards the direction of the optical axis at a second angle relative to the optical axis. When directing the particle beam to the predeterminable location, the first angle passes through a first predeterminable range of values ​​and the second angle passes through a second predeterminable range of values. In other words, a method known as "swinging the beam" is performed at the predeterminable location.

[0035] The method according to the present invention is also provided with at least one detector detecting first interaction particles and / or first interaction radiation. When the particle beam is incident on the object, the first interaction particles and / or the first interaction radiation are generated by the interaction between the particle beam and the object. The first detection signal is generated using the detected first interaction particles and / or the detected first interaction radiation. Further, the first detection signal is used by the control device to generate a first image of the object.

[0036] In addition, method according to the present invention is arranged to use control device to select at least one value of at least one other control parameter of the functional unit that is used to control particle beam equipment.For example, other control parameter is physical quantity, particularly control current or control voltage, and also for example is the ratio of physical quantity, particularly the magnification of physical quantity.The value of physical quantity for example can be set on control unit or use control unit to set and control and / or supply the functional unit of particle beam equipment, makes to produce the physical effect of expectation, for example generates specific magnetic field and / or electrostatic field.About other control parameter, further with reference to the explanation relevant to the example of control parameter above, these explanations also apply here.

[0037] Method according to the present invention is arranged to use a control device to control the functional unit using the value of another control parameter. This control causes the particle beam to be directed from the beam generator toward the direction of the object along the second beam path of the particle beam device. Accordingly, when the functional unit is controlled by the value of another control parameter, the particle beam device operates under the second operating mode. Due to the same control of the functional unit under the first operating mode and under the second operating mode, the first beam path and the second beam path can be different. In other words, in the particle beam device, the route of the particle beam under the first operating mode is different from the route of the particle beam under the second operating mode.

[0038] In addition, the method according to the present invention is arranged to use the first guiding device and the second guiding device to guide the particle beam to the predetermined position of the scanning area on the surface of the object. The first guiding device guides the particle beam away from the optical axis at the third angle relative to the optical axis. In addition, the method according to the present invention is arranged to set the second guiding device to guide the particle beam towards the direction of the optical axis at the fourth angle relative to the optical axis. When the particle beam is guided to the predetermined position, the third angle passes through the third predetermined value range, and the fourth angle passes through the fourth predetermined value range. In other words, the method called "swing beam" is carried out at the predetermined position.

[0039] The method according to the present invention is also provided with a detector to detect second interaction particles and / or second interaction radiation. When the particle beam is incident on the object, the second interaction particles and / or second interaction radiation are generated by the interaction between the particle beam and the object. The second interaction particles detected and / or the second interaction radiation detected are used to generate a second detection signal. Further, the second detection signal is used by the control device to generate a second image of the object.

[0040] In the method according to the invention, a control device is now used to set (i) the size, shape and / or position of the opening of an aperture unit of a particle beam device, and / or (ii) at least one electrostatic and / or magnetic deflection unit of the particle beam device. When setting the aperture unit and / or the deflection unit, the scanning area is shifted so that a first irradiation direction of the particle beam in the direction of a site on the surface of the object corresponds to a second irradiation direction of the particle beam in the direction of a site on the surface of the object, wherein the first irradiation direction is determined according to the first image, and wherein the second irradiation direction is determined according to the second image. In principle, the irradiation direction is the direction in which the particle beam is incident on the site on the surface of the object. For example, the first irradiation direction is obliquely aligned to a first irradiation angle relative to the optical axis. Furthermore, the second irradiation direction is specifically obliquely aligned to a second irradiation angle relative to the optical axis. For example, the deflection unit can be implemented as a first guiding device, a second guiding device and / or a further guiding device. For example, the first image is compared with the second image, for example in order to determine the first irradiation direction and the second irradiation direction, wherein, for example, the first image and the second image are superimposed. For example, the Kikuchi lines identifiable in the two images are aligned with each other. In addition or in the alternative, it is provided that the lines determined in the two images are aligned using a Hough transformation. In addition or in the alternative, it is provided that the deviation of the first image and the second image is determined using an image recognition system. The aforementioned settings are implemented, for example, superposition of the first image and the second image, until the deviation no longer exists or exists only to a small extent. Then, the first illumination direction corresponds to the second illumination direction.

[0041] The present invention recognizes that applying a method known as "swinging beam" in different operating modes of a particle beam device allows different beam paths caused by different operating modes of the particle beam device to be aligned with each other or mergeable. The present invention ensures that in the different operating modes the particle beam is firstly directed to the same location on the object and secondly has the same orientation relative to the object so that in a crystalline object the same lattice plane of the crystal lattice of the object is measured.

[0042] According to one embodiment of the method of the present invention, the control parameter and the further control parameter are additionally or alternatively set to be the same. Then, according to this embodiment of the method of the present invention, additionally or alternatively include using the control parameter as the further control parameter. Specifically, the value of the control parameter is set to be the first value and the value of the further control parameter is the second value.

[0043] According to another embodiment of the method of the present invention, the first angle is additionally or alternatively arranged to be used as the second angle. In other words, the first angle and the second angle are the same. Accordingly, when the functional unit is controlled by the value of the control parameter, (i) the first guiding device guides the particle beam away from the optical axis at a first angle relative to the optical axis, and (ii) the second guiding device then guides the particle beam back toward the direction of the optical axis at the first angle relative to the optical axis. According to another embodiment of the method of the present invention, the third angle is additionally or alternatively arranged to be used as the fourth angle. In other words, the third angle and the fourth angle are the same. Therefore, when the functional unit is controlled by the value of another control parameter, (i) the first guiding device guides the particle beam away from the optical axis at a third angle relative to the optical axis, and (ii) the second guiding device then guides the particle beam back toward the direction of the optical axis at the third angle relative to the optical axis.

[0044] According to one embodiment of the method of the invention, at least one of the following method steps is additionally or alternatively provided: (i) using a first predeterminable value range with an angle range between 0° and 90°; (ii) using a second predeterminable value range with an angle range between 0° and 90°; (iii) using a third predeterminable value range with an angle range between 0° and 90°; and (iv) using a fourth predeterminable value range with an angle range between 0° and 90°. The fact that the invention is not limited to the aforementioned angles is explicitly mentioned. Instead, any angle suitable for the invention can be used.

[0045] According to another embodiment of the method of the present invention, at least one of the following method steps is additionally or alternatively provided: (i) using the first predeterminable value range as the second predeterminable value range; and (ii) using the third predeterminable value range as the fourth predeterminable value range. In other words, for example, the first predeterminable value range and the second predeterminable value range are the same. In addition, for example, the third predeterminable value range and the fourth predeterminable value range are the same.

[0046] As already explained above, a functional unit is to be understood above and below as any structural unit of a particle beam device that can be set in any way. For example, the position of the functional unit in the particle beam device can be set. In addition or in an alternative, the electrostatic and / or magnetic embodiment of the functional unit is set so as to intentionally influence the guidance of the particle beam in the particle beam device and / or the shape of the particle beam. An embodiment of the method according to the invention now additionally or alternatively provides for the use of at least one specific functional unit for the method according to the invention. For example, the method according to the invention comprises at least one of the following method steps: (i) using a beam generator as a functional unit to set the particle current supplied to the object; (ii) using an aperture unit as a functional unit to set the convergence angle of the particle beam; (iii) using a first beam-forming lens of a particle beam device as a functional unit; and (iv) using a second beam-forming lens of a particle beam device as a functional unit. The following fact is explicitly mentioned: the present invention is not limited to the use of the aforementioned functional units of a particle beam device. Instead, any functional unit of a particle beam device suitable for the present invention can be used in the present invention.

[0047] Further embodiments of the method according to the invention additionally or alternatively provide for performing at least one of the following method steps: (i) detecting backscattered particles as first interacting particles; (ii) detecting backscattered particles as second interacting particles; (iii) detecting backscattered electrons as first interacting particles; and (iv) detecting backscattered electrons as second interacting particles. In this case, both above and below, backscattered particles are to be understood as particles backscattered from an object, and backscattered electrons are to be understood as electrons backscattered from an object. It was found that the detection of backscattered particles, in particular backscattered electrons, is particularly suitable for the method known as "swinging beam" and / or for ECCI. However, the fact that the present invention is not limited to detecting backscattered particles, in particular backscattered electrons. Rather, any interacting particles and / or interacting radiation suitable for the present invention can be detected in the present invention.

[0048] All embodiments of the method according to the present invention hereinabove and hereinafter are not limited to the order of the method steps mentioned. The present invention also includes different orders of the method steps suitable for solving the problems within the meaning of the present invention. In an alternative or in addition thereto, the method according to the present invention is also provided with parallel implementation of at least two of the method steps mentioned further above or further below. In addition, the embodiments of the method according to the present invention hereinabove and hereinafter are not limited to the complete scope of all the method steps mentioned further above or further below. Specifically, it is provided to omit a single or multiple method steps in the above or below in another embodiment.

[0049] The present invention also relates to a computer program product, which includes a program code that can be loaded or loaded into a processor of a particle beam device, wherein, when the program code is executed in the processor, the program code controls the particle beam device so as to execute a method having at least one of the foregoing or following features or a combination of at least two of the foregoing or following features. In other words, the present invention also relates to a non-transient computer-readable medium, which includes software that can be loaded or loaded into a processor of a particle beam device, wherein, when the software is executed in the processor, the software controls the particle beam device so as to execute a method having at least one of the foregoing or following features or a combination of at least two of the foregoing or following features. The software includes an executable code for executing at least one of the method steps above or below.

[0050] In this respect, the invention also relates to a processor which is arranged on a particle beam device and is designed to execute a method having at least one of the preceding or following features or a combination of at least two of the preceding or following features.

[0051] The invention further relates to a particle beam device for processing, imaging and / or analyzing an object, wherein the particle beam device has been further explained above and will be described in further detail below. The particle beam device will be briefly summarized again below.

[0052] The particle beam device according to the present invention comprises at least one beam generator for generating a particle beam with charged particles. The charged particles are, for example, electrons or ions. In addition, the particle beam device according to the present invention is provided with at least one aperture unit for setting the particle beam. For example, the aperture unit is used to set the shape and / or current of the particle beam. Specifically,

[0053] The size of the opening of the aperture unit and / or the position of the aperture unit in the particle beam device can be set. In addition, the particle beam device according to the present invention comprises at least one functional unit for generating, setting, guiding and / or shaping particle beam. As explained above, the functional unit should be understood as any structural unit of the particle beam device that can be set in any way. For example, the position of the functional unit in the particle beam device can be set. In addition or in an alternative, the electrostatic and / or magnetic embodiments of the functional unit are set to be set so as to intentionally influence the guidance of the particle beam in the particle beam device and / or the shape of the particle beam.

[0054] In addition, the particle beam device according to the present invention comprises at least one first guiding device for guiding the particle beam. For example, the first guiding device is implemented as a first deflection device. The first deflection device is specifically implemented as an electrostatic and / or magnetic deflection device. Further, the particle beam device according to the present invention comprises at least one second guiding device for guiding the particle beam. For example, the second guiding device is implemented as a second deflection device. The second deflection device is specifically implemented as an electrostatic and / or magnetic deflection device. For example, the first guiding device and / or the second guiding device are implemented as functional units.

[0055] Furthermore, the particle beam device according to the invention comprises at least one detector for detecting interaction particles and / or interaction radiation, wherein interaction particles and / or interaction radiation are generated by the interaction of the particle beam with the object when the particle beam is incident on the object.

[0056] The particle beam device according to the present invention further comprises at least one electrostatic and / or magnetic deflection unit. For example, the electrostatic and / or magnetic deflection unit comprises a condenser lens or a plurality of condenser lenses, for example 2 condenser lenses or 3 condenser lenses.

[0057] Furthermore, the particle beam system according to the invention comprises at least one control device, which comprises a processor in which a computer program product having the features already mentioned further above is loaded.

[0058] An embodiment of the particle beam device according to the invention additionally or alternatively provides that the particle beam device comprises at least one scanning device for raster scanning the particle beam over the object. The scanning device is provided with a first guiding device and a second guiding device.

[0059] According to another embodiment of particle beam equipment of the present invention, particle beam equipment is additionally or alternatively arranged to include at least one object lens for particle beam focusing on the object. For example, the first guiding device and / or the second guiding device are arranged in the object lens of particle beam equipment. Specifically, the first guiding device and / or the second guiding device are arranged in the object lens along the optical axis of particle beam equipment.

[0060] According to one embodiment of the particle beam device of the present invention, the beam generator is additionally or alternatively arranged to be implemented as a first beam generator, and the particle beam is implemented as a first particle beam with a first charged particle. The objective lens is implemented as a first objective lens for focusing the first particle beam on an object. In addition, the particle beam device of the present invention comprises at least one second beam generator for generating a second particle beam with a second charged particle. Further, the particle beam device of the present invention comprises at least one second objective lens for focusing the second particle beam on an object.

[0061] In particular, it is provided that the particle beam device according to the invention is embodied as an electron beam device and / or an ion beam device. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Further practical embodiments and advantages of the present invention are described below in conjunction with the accompanying drawings, in which:

[0063] Figure 1 A schematic diagram showing a first embodiment of a particle beam apparatus according to the present invention is shown;

[0064] Figure 2 A schematic diagram showing a second embodiment of a particle beam apparatus according to the present invention is shown;

[0065] Figure 2A A schematic diagram showing a third embodiment of a particle beam apparatus according to the present invention is shown;

[0066] Figure 3 A schematic diagram showing a fourth embodiment of a particle beam apparatus according to the present invention is shown;

[0067] Figure 4 A schematic diagram showing an embodiment of a movable object carrier;

[0068] Figure 5 Shown according to Figure 4 Another schematic diagram of an embodiment of a movable object carrier;

[0069] Figure 6 A schematic diagram showing the operation sequence of a first embodiment of the method according to the present invention;

[0070] Figure 7 a first schematic diagram showing the path of a particle beam in different operating modes of a particle beam device; and

[0071] Figure 8 A second schematic diagram shows the path of a particle beam in different operating modes of the particle beam device. DETAILED DESCRIPTION

[0072] The invention will now be explained in more detail by a particle beam device in the form of a SEM and in the form of a combined device with an electron beam column and an ion beam column. Explicit mention is made of the fact that the invention can be used for any particle beam device, in particular any electron beam device and / or any ion beam device.

[0073] Figure 1A schematic diagram of an embodiment of a particle beam device according to the invention is shown, which particle beam device is in the form of a SEM 100. The SEM 100 comprises a beam generator 1 having an electron source, an extraction electrode 2, a control electrode 3, and an anode 4. The anode 4 forms the source-side end of a beam guide tube 21 of the SEM 100. For example, the beam generator 1 is implemented as a thermal field emitter. In an alternative embodiment, for example, the beam generator 1 is implemented as a thermal tungsten emitter or a LAB 6 Transmitter.

[0074] The electrons emitted from the beam generator 1 form a primary electron beam. The electrons are accelerated to the anode potential due to the potential difference between the beam generator 1 and the anode 4. For example, the potential of the anode 4 is positive 1 kV to 30 kV compared to the potential of the beam generator 1, so the electrons have a kinetic energy in the range of 1 keV to 30 keV.

[0075] When viewed along the optical axis 20 starting from the anode 4 in the direction of the objective 10, the SEM 100 comprises a first condenser lens 5 in front and a second condenser lens 6 in the rear. An aperture unit 7 is arranged between the first condenser lens 5 and the second condenser lens 6 in the beam guide tube 21. Figure 1 In the SEM 100 shown, the objective lens 10 is implemented as a magnetic lens including a pole shoe 22 having a pole shoe gap 23. A toroidal coil 11 is arranged in the pole shoe 22 for generating a magnetic field of the objective lens 10.

[0076] As already explained further above, the beam path of the particle beam depends on the operating mode of the SEM 100. This will be explained in further detail still below.

[0077] When looking from the second condenser lens 6 in the direction of the objective lens 10, a guidance system is arranged along the optical axis 20 of the SEM 100, which has a first guidance device in the form of a first deflection device 9 and a second guidance device in the form of a second deflection device 12. The first deflection device 9 is arranged on the source side, on the objective lens 10. In contrast, the second deflection device 12 is arranged on the beam guide tube 21, on the object side, inside the objective lens 10. The first deflection device 9 and the second deflection device 12 are cross-beam deflection devices. In other words, both the first deflection device 9 and the second deflection device 12 are implemented so that they deflect the primary electron beam in two directions that are not parallel to each other and are aligned at right angles to the direction of the optical axis 20. For example, the first deflection device 9 and / or the second deflection device 12 are implemented as magnetic deflection devices. Specifically, the first deflection device 9 and / or the second deflection device 12 each include, for example, four air coils arranged around the optical axis 20 of the SEM 100. In addition or in an alternative, the first deflection device 9 and / or the second deflection device 12 are implemented as electrostatic deflection devices. Specifically, the first deflection device 9 and / or the second deflection device 12 respectively each include, for example, four electrodes, which are arranged around the optical axis 20 of the SEM 100 and to which different electrostatic potentials can be applied.

[0078] The objective lens 10 is arranged on the sample chamber 13. Specifically, the objective lens 10 protrudes through the opening of the sample chamber 13 into the interior of the sample chamber 13. A movable object stage 19 is arranged in the interior of the sample chamber 13. The object 15 can be arranged on the object stage 19.

[0079] By means of the objective lens 10, the primary electron beam generated by the beam generator 1 and shaped by the first condenser lens 5 and / or the second condenser lens 6 is focused on the object plane 16. Suitable excitation of the first deflection device 9 and the second deflection device 12 ensures that the primary electron beam can be deflected perpendicularly to the optical axis 20 of the SEM 100 on the object plane 16, so that the surface of the object 15 arranged on the object plane 16 can be raster scanned by different deflections of the primary electron beam. In this process, the electrons of the primary electron beam interact with the object 15. As a result of the interaction, in particular, electrons (so-called secondary electrons) are emitted by the object 15, and the electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and the backscattered electrons are detected and used for image generation. Thus, an image representation of the object 15 to be examined is obtained. In addition, interaction radiation (e.g., x-ray radiation or cathode luminescence) is generated during the interaction, and the interaction radiation is detected and subsequently evaluated in order to analyze the object 15.

[0080] For detecting the aforementioned interacting particles and / or the aforementioned interacting radiation, for example, a first detector unit 14 is arranged in the sample chamber 13. In addition or in an alternative, for example, a second detector unit 8 for detecting the aforementioned interacting particles is arranged in the beam guide tube 21 in the region between the first deflection device 9 and the second condenser lens 6.

[0081] For example, in Figure 1 In the embodiment of the SEM 100 shown, a pressure stage aperture mount 17 is provided, which can be arranged on a pole piece 22 of the objective 10 protruding into the sample chamber 13. For example, the pressure stage aperture mount 17 comprises a pressure stage aperture with an aperture 18. For example, further pressure stage apertures can be arranged in the beam guide tube 21 of the SEM 100. These can be arranged in a plurality of different positions. Figure 1 Not shown in FIG. Figure 1 Also not shown are vacuum pumps, which are desirable, for example, for generating and maintaining a desired vacuum within the beam guide tube 21 and sample chamber 13 for operation of the SEM 100 .

[0082] For example, if the SEM 100 is intended to operate at a high vacuum in the sample chamber 13, the pressure stage aperture mount 17 is not mandatory and can therefore be removed from the pole piece 22 of the objective 10. On the other hand, if the SEM 100 is intended to operate at a relatively high pressure (pressure in the range of about 1 Pa to 3000 Pa) in the sample chamber 13, for example, the pressure stage aperture mount 17 should be mounted on the pole piece 22 of the objective 10, so that a sufficiently good vacuum can be maintained in the beam guide tube 21 by differential pumping despite the higher pressure in the sample chamber 13. In case the pressure stage aperture mount 17 is mounted, for example the edge of the aperture 18 in the pressure stage aperture mount 17 leads to trimming of the image field that can be raster scanned on the object plane 16.

[0083] Specifically, the first detector unit 14, the second detector unit 8, the first deflection device 9 and the second deflection device 12 are connected to a control device 123, which includes a monitor 124. The control device 123 processes the detection signals generated by the first detector unit 14 and the second detector unit 8, and displays the signals in the form of an image on the monitor 124. The control device 123 also includes a database 126 in which data is stored and read out. In addition, the control device 123 is connected to other units of the SEM 100. This is Figure 1 Not shown in detail.

[0084] The control device 123 of the SEM 100 comprises a processor 127. The processor 127 is loaded with a computer program product comprising a program code which, when executed, performs a method for operating the SEM 100. This will be explained in further detail below.

[0085] In the SEM 100, the distance A can be set using the control device 123 of the SEM 100. The distance A is given by: (a) the object distance between the outer boundary of the objective lens 10 of the SEM 100 and the object 15; or (b) the focal plane distance between the outer boundary of the objective lens 10 of the SEM 100 and the focal plane of the objective lens 10. The aforementioned distance A according to the case (a) or the case (b) is also referred to as a working distance. For example, the distance A in the case (a) is set by moving the object stage 19 and / or moving the objective lens 10 using the moving device 25. Specifically, the distance A in the case (b) is set by changing the excitation of the objective lens 10 along the optical axis 20 of the SEM 100.

[0086] Figure 2 A schematic diagram of a further SEM 100 is shown. The further SEM 100 comprises a first beam generator in the form of an electron source 101, which is implemented as a cathode. Furthermore, the further SEM 100 is provided with an extraction electrode 102 and an anode 103, which is placed onto one end of a beam guide tube 104 of the further SEM 100. For example, the electron source 101 is implemented as a thermal field emitter. However, the present invention is not limited to such an electron source 101. Rather, any electron source suitable for the present invention may be used.

[0087] The electrons emitted from the electron source 101 form a primary electron beam. The electrons are accelerated to the anode potential due to the potential difference between the electron source 101 and the anode 103. In the embodiment presented here, the anode potential is 100V to 35kV, for example 5kV to 15kV, in particular 8kV, relative to the ground potential of the housing of the sample chamber 120. However, alternatively, the anode potential can also be at the ground potential.

[0088] Two condenser lenses, in particular a first condenser lens 105 and a second condenser lens 106, are arranged on the beam guide tube 104. When looking starting from the electron source 101 in the direction of the first objective lens 107, in this case the first condenser lens 105 is arranged first, followed by the second condenser lens 106. Explicit reference is made to the fact that further embodiments of further SEMs 100 may comprise only a single condenser lens. A first aperture unit 108 is arranged between the anode 103 and the first condenser lens 105. Together with the anode 103 and the beam guide tube 104, the first aperture unit 108 is at a high voltage potential, in particular the potential of the anode 103, or is connected to ground. The first aperture unit 108 comprises a plurality of first apertures 108A, at Figure 2 One of them is depicted in . For example, there are two first apertures 108A. Each of the multiple first apertures 108A has a different aperture diameter. By means of an adjustment mechanism (not shown), the desired first aperture 108A can be set on the optical axis OA of the further SEM 100. The following fact is explicitly mentioned: in a further embodiment, the first aperture unit 108 may be provided with only a single first aperture 108A. In this embodiment, an adjustment mechanism may not be provided. Then, the first aperture unit 108 is implemented to be fixed. A fixed second aperture unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. In an alternative, the second aperture unit 109 is provided to be movable.

[0089] As already explained further above, the beam path of the particle beam depends on the operating mode of the further SEM 100. This will be explained in further detail still below.

[0090] The first objective 107 comprises pole shoes 110 in which boreholes are formed. The beam guide tube 104 is guided through the boreholes. A coil 111 is arranged in the pole shoes 110.

[0091] An electrostatic deceleration device is arranged in the lower region of the beam guide tube 104. The electrostatic deceleration device comprises a single electrode 112 and a tubular electrode 113. The tubular electrode 113 is arranged at one end of the beam guide tube 104, which end faces the object 125 arranged on the movable object holder 114.

[0092] The tubular electrode 113 together with the beam guide tube 104 is at the potential of the anode 103, while the single electrode 112 and the object 125 are at a lower potential relative to the potential of the anode 103. In the present case, this is the ground potential of the housing of the sample chamber 120. In this way, the electrons of the primary electron beam can be decelerated to the desired energy desired for the examination of the object 125.

[0093] The object 125 and the single electrode 112 may also be at different potentials and at a different potential from the ground. This makes it possible to set the location of the deceleration of the primary electron beam relative to the object 125. For example, if the deceleration is performed very close to the object 125, the imaging aberrations become smaller.

[0094] The further SEM 100 further comprises a guidance system having a first guidance device in the form of a first deflection device 130 and having a second guidance device in the form of a second deflection device 115. The first deflection device 130 is arranged on the source side, inside the first objective 107. In contrast, the second deflection device 115 is arranged on the beam guide tube 104, on the object side, inside the first objective 107. The first deflection device 130 and the second deflection device 115 are cross-beam deflection devices. In other words, both the first deflection device 130 and the second deflection device 115 are implemented so that they deflect the primary electron beam in two directions that are not parallel to each other and aligned at right angles to the direction of the optical axis OA of the further SEM 100. For example, the first deflection device 130 and / or the second deflection device 115 are implemented as magnetic deflection devices. Specifically, the first deflection device 130 and / or the second deflection device 115 respectively each include, for example, four air coils arranged around the optical axis OA of the further SEM 100. In addition or in an alternative, the first deflection device 130 and / or the second deflection device 115 are implemented as electrostatic deflection devices. Specifically, the first deflection device 130 and / or the second deflection device 115 respectively include, for example, four electrodes, which are arranged around the optical axis OA of the SEM 100 and different electrostatic potentials can be applied to these electrodes. By means of the first deflection device 130 and the second deflection device 115, the primary electron beam is deflected and can be scanned (or raster scanned) on the object 125. In the process, the electrons of the primary electron beam interact with the object 125. The interaction produces interaction particles, which are detected. Specifically, electrons emitted from the surface of the object 125 (so-called secondary electrons), or electrons of the primary electron beam that are backscattered (so-called backscattered electrons) are interaction particles.

[0095] A detector arrangement comprising a first detector 116 and a second detector 117 is arranged in the beam guide tube 104 for detecting secondary electrons and / or backscattered electrons. In this case, in the beam guide tube 104, the first detector 116 is arranged on the source side along the optical axis OA, while the second detector 117 is arranged on the object side along the optical axis OA. The first detector 116 and the second detector 117 are arranged offset from each other in the direction of the optical axis OA of the SEM 100. The first detector 116 and the second detector 117 both have respective through openings through which the primary electron beam can pass. The first detector 116 and the second detector 117 are approximately at the potential of the anode 103 and the beam guide tube 104. The optical axis OA of the SEM 100 extends through the respective through openings.

[0096] The second detector 117 is mainly used to detect secondary electrons. When emitted from the object 125, the secondary electrons initially have low kinetic energy and a random direction of motion. The secondary electrons are accelerated in the direction of the first objective lens 107 by a strong extraction field emitted from the tubular electrode 113. The secondary electrons enter the first objective lens 107 approximately in parallel. The beam diameter of the secondary electron beam remains small even in the first objective lens 107. The first objective lens 107 then has a strong effect on the secondary electrons and generates a relatively short secondary electron focus at a sufficiently steep angle relative to the optical axis OA, so that the secondary electrons diverge significantly from each other downstream of the focus and impinge on the effective area of ​​the second detector 117. In contrast, the second detector 117 detects only a small portion of the electrons backscattered at the object 125 (i.e., backscattered electrons having a relatively high kinetic energy compared to the secondary electrons emitted from the object 125). The high kinetic energy of the backscattered electrons when emitted from the object 125 and the angle relative to the optical axis OA have the effect that the beam waist (i.e., the beam region of minimum diameter) of the backscattered electrons is located near the second detector 117. Most of the backscattered electrons pass through the through opening of the second detector 117. Therefore, the first detector 116 is basically used to detect the backscattered electrons.

[0097] In a further embodiment of a further SEM 100, the first detector 116 may be designed to also have a backscatter grating 116A. The backscatter grating 116A is arranged on the side of the first detector 116 facing the object 125. The backscatter grating 116A has a negative potential relative to the potential of the beam guide tube 104, so that only backscattered electrons with high kinetic energy pass through the backscatter grating 116A to reach the first detector 116. In addition or in an alternative, the second detector 117 includes a further backscatter grating having a similar design and having a similar function as the aforementioned backscatter grating 116A of the first detector 116.

[0098] Further, in the sample chamber 120, the additional SEM 100 comprises a chamber detector 119, such as an Everhart-Thornley detector or an ion detector, having a metal-coated detection surface that blocks light.

[0099] The detection signals generated by the first detector 116 , the second detector 117 , and the chamber detector 119 are used to generate one or more images of the surface of the object 125 .

[0100] The fact that the apertures of the first aperture unit 108 and the apertures of the second aperture unit 109 as well as the through openings in the first detector 116 and the through openings in the second detector 117 are depicted in an exaggerated manner is explicitly mentioned. The through openings in the first detector 116 and the through openings in the second detector 117 perpendicular to the optical axis OA range from 0.5 mm to 5 mm. For example, the through openings have a circular design and a diameter perpendicular to the optical axis OA ranges from 1 mm to 3 mm.

[0101] The second aperture unit 109 is configured as a pinhole aperture in the embodiment shown here and is provided with a second aperture 118 for passing the primary electron beam, the second aperture ranging from 5 μm to 500 μm, for example 35 μm. In an alternative, for example in another embodiment, the second aperture unit 109 is provided with a plurality of apertures, which can be mechanically displaced to the primary electron beam or can be made to reach the primary electron beam using electric and / or magnetic deflection elements. For example, the second aperture unit 109 is designed as a pressure-stage aperture. In one embodiment, this separates a first region, in which the electron source 101 is arranged and in which an ultrahigh vacuum (10 -7 hPa to 10 -12 hPa), the second region has a high vacuum (10 -3 hPa to 10 -7 hPa). In the exemplary embodiment, the second region is an intermediate pressure region of the beam guide tube 104 , which opens into the sample chamber 120 .

[0102] For example, in another embodiment, the sample chamber 120 may be at or near atmospheric pressure or under vacuum. In order to generate the vacuum, a pump (not depicted) is arranged on the sample chamber 120. Figure 2 In the illustrated embodiment, the sample chamber 120 operates within a first pressure range or within a second pressure range. Specifically, the first pressure range is set to include only pressures less than or equal to 10 -3 hPa pressure, the second pressure range only includes pressures greater than 10 -3 To ensure these pressure ranges, the sample chamber 120 is, for example, vacuum-tight.

[0103] The object holder 114 is arranged on the object carrier 122. The object carrier 122 is designed to be movable in three directions arranged perpendicularly to each other, specifically in the x-direction (first carrier axis), the y-direction (second carrier axis) and the z-direction (third carrier axis). In addition, the object carrier 122 can rotate around two rotation axes (rotation axes of the carrier) arranged perpendicularly to each other. The present invention is not limited to the aforementioned object carrier 122. Instead, the object carrier 122 can have additional translation axes and rotation axes along which or around which the object carrier 122 can move. For example, the additional axis is aligned in the z-direction, and the isocenter height can be set along or using the additional axis.

[0104] The further SEM 100 further comprises a third detector 121 arranged in the sample chamber 120. More precisely, the third detector 121 is arranged downstream of the object stage 122 when viewed along the optical axis OA from the electron source 101. The object stage 122 and therefore the object holder 114 can be rotated so that the primary electron beam can radiate through an object 125 arranged on the object holder 114. When the primary electron beam passes through the object 125 to be inspected, the electrons of the primary electron beam interact with the material of the object 125 to be inspected. The third detector 121 detects the electrons that pass through the object 125 to be inspected.

[0105] A radiation detector 500 is arranged on the sample chamber 120, which is used to detect interaction radiation, such as x-ray radiation and / or cathode luminescence, generated when the primary electron beam is incident on the object 125. The radiation detector 500, the first detector 116, the second detector 117 and the chamber detector 119 are connected to the control device 123, which includes a monitor 124. The third detector 121 is also connected to the control device 123. This is not shown for the sake of clarity. The control device 123 processes the detection signals generated by the first detector 116, the second detector 117, the chamber detector 119, the third detector 121 and / or the radiation detector 500, and displays the detection signals on the monitor 124 in the form of an image.

[0106] The control device 123 also comprises a database 126 in which data are stored and from which data are read. Further, the control device 123 is connected to a guidance system comprising a first deflection device 130 and a second deflection device 115. Furthermore, the control device 123 is connected to further units of the further SEM 100. This is not shown in detail for the sake of clarity.

[0107] The control device 123 of the further SEM 100 comprises a processor 127. The processor 127 is loaded with a computer program product comprising a program code which, when executed, performs a method for operating the further SEM 100. This will be explained in further detail below.

[0108] In the further SEM 100, the distance A can be set using the control device 123 of the further SEM 100. The distance A is given by: (a) the object distance between the outer boundary of the first objective lens 107 of the further SEM 100 (e.g., the single electrode 112) and the object 125; or (b) the focal plane distance between the outer boundary of the first objective lens 107 of the further SEM 100 and the focal plane of the first objective lens 107. The aforementioned distance A according to the case (a) or the case (b) is also referred to as the working distance. For example, the distance A in the case (a) is set by moving the object stage 122 and / or moving the first objective lens 107 using the moving device 25. For example, the distance A in the case (b) is set by changing the excitation of the first objective lens 107 along the optical axis OA of the further SEM 100.

[0109] Figure 2A Another embodiment of a SEM 100 is shown, which is based on Figure 2 Therefore, reference is made to the explanations given above, which also apply here. Figure 2 Compared with the embodiment of Figure 2A The embodiment of the invention does not include the second condenser lens 106. Instead, the first deflection unit 131 is arranged on the source side, on the second aperture unit 109, and the second deflection unit 132 is arranged on the object side, on the second aperture unit 109. For example, the first deflection unit 131 and / or the second deflection unit 132 are implemented as electrostatic and / or magnetic deflection units.

[0110] Figure 3 A particle beam device in the form of a combined device 200 is shown. The combined device 200 comprises two particle beam columns. First, the combined device 200 is provided with a Figure 2 The further SEM 100 shown in FIG. 1 does not have the sample chamber 120 . Instead, the further SEM 100 is arranged on a sample chamber 201 . The sample chamber 201 is under vacuum. In order to generate the vacuum, a pump (not shown) is arranged on the sample chamber 201 . For example, Figure 3 In the illustrated embodiment, the sample chamber 201 operates within a first pressure range or within a second pressure range. For example, the first pressure range only includes pressures less than or equal to 10 -3 hPa pressure, the second pressure range only includes pressures greater than 10 -3To ensure these pressure ranges, the sample chamber 201 is, for example, vacuum-tight.

[0111] A chamber detector 119 is arranged in the sample chamber 201 , which is implemented, for example, in the form of an Everhart-Thornley detector or in the form of an ion detector and has a metal-coated detection surface that blocks light. Further, a third detector 121 is arranged in the sample chamber 201 .

[0112] The further SEM 100 is used to generate a first particle beam, in particular a primary electron beam as described further above, and comprises an optical axis as mentioned above, which is located at Figure 3 709 and is also referred to as the first beam axis in the following. Secondly, the combined device 200 is provided with an ion beam device 300, which is also arranged on the sample chamber 201. The ion beam device 300 also has an optical axis, which is at Figure 3 The axis 710 is provided in the figure and is also referred to as the second beam axis in the following.

[0113] As already explained further above, the beam path of the primary electron beam along the first beam axis 709 and / or the beam path of the second particle beam (ion beam) along the second beam axis 710 depends on the operating mode of the combined device 200. This will be explained in further detail still below.

[0114] The further SEM 100 is arranged vertically relative to the sample chamber 201. In contrast, the ion beam device 300 is arranged in a manner inclined at an angle of approximately 0° to 90° relative to the further SEM 100. For example, Figure 3 300. The ion beam device 300 includes a second beam generator in the form of an ion beam generator 301. The ion beam generator 301 generates ions, which form a second particle beam in the form of an ion beam. These ions are accelerated by an extraction electrode 302 at a predeterminable potential. The second particle beam then passes through an ion optical unit of the ion beam device 300, which includes a bunching lens 303 and a second objective lens 304. The second objective lens 304 ultimately generates an ion probe, which is focused on an object 125 arranged on an object holder 114. The object holder 114 is arranged on an object carrier 122.

[0115] A settable or selectable aperture 306 is arranged above the second objective lens 304 (i.e., in the direction of the ion beam generator 301). In addition, a guiding system is provided with a first guiding device in the form of a first deflecting device 307 and a second guiding device in the form of a second deflecting device 308. The first deflecting device 307 is arranged on the source side, for example, in the second objective lens 304. In contrast, the second deflecting device 308 is arranged on the object side, for example, in the second objective lens 304. The first deflecting device 307 and the second deflecting device 308 are cross-beam deflecting devices. In other words, both the first deflecting device 307 and the second deflecting device 308 are implemented so that they deflect the ion beam in two directions that are not parallel to each other and are aligned at right angles to the direction of the optical axis in the form of a second beam axis 710 of the ion beam device 300. For example, the first deflecting device 307 and / or the second deflecting device 308 are implemented as magnetic deflecting devices. Specifically, the first deflection device 307 and / or the second deflection device 308 respectively include, for example, four air coils, which are arranged around an optical axis in the form of a second beam axis 710 of the ion beam device 300. In addition or in an alternative, the first deflection device 307 and / or the second deflection device 308 are implemented as electrostatic deflection devices. Specifically, the first deflection device 307 and / or the second deflection device 308 respectively include, for example, four electrodes, which are arranged around an optical axis in the form of a second beam axis 710 of the ion beam device 300 and different electrostatic potentials can be applied to these electrodes. By means of the first deflection device 307 and the second deflection device 308, the ion beam is deflected and can be scanned (or raster scanned) on the object 125.

[0116] As explained above, the object holder 114 is arranged on the object carrier 122. Figure 3 In the illustrated embodiment, the object stage 122 is also designed to be movable in three directions arranged perpendicularly to each other, specifically in the x direction (first stage axis), the y direction (second stage axis) and the z direction (third stage axis). In addition, the object stage 122 can rotate around two rotation axes (rotation axes of the stage) arranged perpendicularly to each other.

[0117] In order to better illustrate the various units of the combined device 200, the components are presented in an exaggerated manner. Figure 3 The distances between the various units of the combined device 200 depicted in FIG.

[0118] A radiation detector 500 for detecting interaction radiation (eg x-ray radiation and / or cathodoluminescence) is arranged on the sample chamber 201. The radiation detector 500 is connected to a control device 123, which includes a monitor 124.

[0119] The control device 123 processes the first detector 116 ( Figure 3 Not shown), the second detector 117 ( Figure 3 ), the chamber detector 119, the third detector 121 and / or the radiation detector 500 generate detection signals, and display the detection signals on the monitor 124 in the form of images.

[0120] The control device 123 also includes a database 126 in which data is stored and read from. Further, the control device 123 is connected to a primary electron beam for another SEM 100 including a first deflection device 130 ( Figure 3 ) and a second deflection device 115 ( Figure 3 The ion beam guide system 300 is connected to a guiding system for the ion beam of the ion beam device 300, including a first deflection device 307 and a second deflection device 308.

[0121] The control means 123 of the combined device 200 comprises a processor 127. The processor 127 is loaded with a computer program product comprising a program code which, when executed, performs a method for operating the combined device 200. This will be explained in further detail below.

[0122] The working distance can also be set in the combined device 200. For example, in the further SEM 100, the distance A1 can be set using the control device 123. The distance A1 is given by: (a) the object distance between the outer boundary of the first objective 107 of the further SEM 100 and the object 125; or (b) the focal plane distance between the outer boundary of the first objective 107 of the further SEM 100 and the focal plane of the first objective 107. The aforementioned distance A1 according to the case (a) or the case (b) is also referred to as the working distance. For example, the distance A1 in the case (a) is set by moving the object stage 122 and / or moving the first objective 107 using the moving device 25. For example, the distance A1 in the case (b) is set by changing the excitation of the first objective 107 along the first beam axis 709 of the further SEM 100. The distance A2 can further be set using the control device 123. The distance A2 is given by: (a) the object distance between the outer boundary of the second objective lens 304 of the ion beam device 300 and the object 125; or (b) the focal plane distance between the outer boundary of the second objective lens 304 of the ion beam device 300 and the focal plane of the second objective lens 304. The aforementioned distance A2 according to the case (a) or the case (b) is also referred to as a working distance. For example, the distance A2 in the case (a) is set by moving the object stage 122 and / or moving the second objective lens 304 using the moving device 25. For example, the distance A2 in the case (b) is set by changing the excitation of the second objective lens 304 along the second beam axis 710 of the ion beam device 300.

[0123] In the following, we will discuss in detail Figure 2 The other SEM 100, according to Figure 2A Another SEM 100 and according to Figure 3 The object stage 122 of the combined device 200 is designed to Figure 4 and Figure 5 The same applies correspondingly to the movable object carrier according to Figure 1 The object stage 19 of the SEM 100 is provided.

[0124] Reference is made to the fact that the present invention is not limited to the object stage 122 described herein. Rather, the present invention may include any movable object stage suitable for the present invention.

[0125] The object holder 114 is arranged on an object carrier 122. The object carrier 122 comprises movement elements which ensure that the object carrier 122 moves so that a region of interest on an object 125 can be examined, for example, by a particle beam. Figure 4 and Figure 5 The moving elements are schematically depicted in FIG. 1 and explained below.

[0126] The object carrier 122 comprises, for example, a first moving element 600 arranged on a housing 601 of a sample chamber 120 or 201, in which the object carrier 122 is arranged. The first moving element 600 enables the object carrier 122 to move along the z-axis (third carrier axis). A second moving element 602 is also provided. The second moving element 602 enables the object carrier 122 to rotate around a first rotation axis 603 (also referred to as a tilt axis) of the carrier. The second moving element 602 is used to tilt an object 125 around the first rotation axis 603 of the carrier, wherein the object 125 is arranged on the object holder 114.

[0127] A third moving element 604 is arranged on the second moving element 602, which is designed as a guide for a slide and ensures that the object carrier 122 can move along the x direction (the first carrier axis). The aforementioned slide is another moving element, specifically a fourth moving element 605. The fourth moving element 605 is designed to enable the object carrier 122 to move along the y direction (the second carrier axis). For this purpose, the fourth moving element 605 includes a guide, in which another slide is guided, and the object holder 114 is arranged on the other slide. The object holder 114 is designed to have a fifth moving element 606, which enables the object holder 114 to rotate around the second rotation axis 607 of the carrier. The second rotation axis 607 of the carrier is oriented perpendicular to the first rotation axis 603 of the carrier.

[0128] Due to the above arrangement, the object carrier 122 of the embodiment discussed herein has the following motion chain: a first moving element 600 (moving along the z-axis) - a second moving element 602 (rotating around the first rotation axis 603 of the carrier) - a third moving element 604 (moving along the x-axis) - a fourth moving element 605 (moving along the y-axis) - a fifth moving element 606 (rotating around the second rotation axis 607 of the carrier).

[0129] In further embodiments (not shown), further movement elements are arranged on the object carrier 122 so as to be movable along further translation axes and / or around further rotation axes.

[0130] from Figure 5 As is apparent from the foregoing, each of the aforementioned moving elements is connected to a drive unit in the form of a motor M1 to M5. In this regard, the first moving element 600 is connected to the first drive unit M1 and is driven by a driving force provided by the first drive unit M1. The second moving element 602 is connected to the second drive unit M2, which drives the second moving element 602. The third moving element 604 is in turn connected to the third drive unit M3. The third drive unit M3 provides a driving force for driving the third moving element 604. The fourth moving element 605 is connected to the fourth drive unit M4, wherein the fourth drive unit M4 drives the fourth moving element 605. Further, the fifth moving element 606 is connected to the fifth drive unit M5. The fifth drive unit M5 provides a driving force for driving the fifth moving element 606.

[0131] The aforementioned drive units M1 to M5 may be designed as stepper motors, for example, and are controlled by the drive control unit 608, and each drive unit is supplied with power current by the drive control unit 608 (see Figure 5 ). The fact that the invention is not limited to movement by means of stepper motors is explicitly mentioned. Rather, any drive unit suitable for the invention can be used as drive unit, for example a brushless motor.

[0132] In the following, based on Figure 1 The SEM 100 of the present invention is explained in detail in accordance with an embodiment of the method according to the present invention. Figure 2 The other SEM 100, according to Figure 2A Another SEM 100 and according to Figure 3 The combined device 200 is applicable.

[0133] Figure 6 An embodiment of the method according to the present invention is shown, the method is composed of Figure 1 The SEM 100 is performed. In method step S1 , a particle beam in the form of a primary electron beam is generated using a beam generator 1 .

[0134] Furthermore, method step S2 provides for selecting, using the control device 123, at least one value of a control parameter for controlling at least one functional unit of the SEM 100. For example, the control parameter is a physical quantity, in particular a control current or a control voltage, but also, for example, a ratio of physical quantities, in particular an amplification of physical quantities. The value of the physical quantity can, for example, be set on the control device 123 or the control device can be used to set and control and / or supply the functional unit of the SEM 100 so that a desired physical effect is generated, for example, the generation of a specific magnetic field and / or an electrostatic field. Examples of control parameters have been further explained above. Reference is made to the explanations of the control parameter examples above, which also apply here.

[0135] In particular, in this embodiment of the method according to the invention, a functional unit is understood to be any structural unit of the SEM 100 that can be set in any way. For example, the position of the functional unit in the SEM 100 can be set. In addition or in an alternative, the electrostatic and / or magnetic embodiment of the functional unit is set so as to intentionally influence the guidance of the primary electron beam in the SEM 100 and / or the shape of the primary electron beam. The present invention is not limited to the aforementioned setting options. Instead, the functional unit can be set in any way suitable for the present invention. In addition, for example, the functional unit is formed as a single functional unit or includes a plurality of functional units. For example, the SEM 100 includes the following structural units, which can be used / used as functional units in the method according to the present invention: beam generator 1, extraction electrode 2, control electrode 3, anode 4, first condenser lens 5, second condenser lens 6 (if present), aperture unit 7, first deflection device 9, objective lens 10, second deflection device 12 and / or object carrier 19.

[0136] In accordance with Figure 6 In the method according to the invention, it is now provided in method step S3 to control a functional unit, a plurality of functional units or all functional units using the value of the control parameter using the control device 123. This control causes the primary electron beam to be directed from the beam generator 1 in the direction of the object 15 along a first beam path of the SEM 100. Actuating the functional unit, a plurality of functional units or all functional units using the value of the control parameter essentially sets a first operating mode of the SEM 100. In this first operating mode of the SEM 100, the primary electron beam travels along the first beam path.

[0137] In method step S4, the primary electron beam is now directed to a predeterminable location of the scanning area on the surface of the object 15 using the first deflection device 9 and the second deflection device 12. Specifically, the first deflection device 9 is arranged at a first angle α relative to the optical axis 20. 1The primary electron beam is directed away from the optical axis 20. In addition, the second deflection device 12 is arranged at a second angle β relative to the optical axis 20. 1 The primary electron beam is directed in the direction of the optical axis 20 (see Figure 1 ). When the primary electron beam is directed to a predeterminable position at a predeterminable position VP, the first angle α 1 After a first predeterminable value range, the second angle β 1 The second predeterminable value range is passed through while the primary electron beam remains at a predeterminable position. In other words, a method known as "swaying beam" is performed at a predeterminable position.

[0138] For example, in another embodiment of the method according to the invention, the first angle α is used. 1 As the second angle β 1 In other words, the first angle α 1 and the second angle β 1 Correspondingly, when controlling the functional unit, multiple functional units or all functional units using the value of the control parameter, (i) the first deflection device 9 is at a first angle α relative to the optical axis 20 1 The primary electron beam is directed away from the optical axis 20, and (ii) the second deflection device 12 is then rotated at a first angle α relative to the optical axis 20. 1 The primary electron beam is directed back in the direction of the optical axis 20. For example, a value range with an angle range between 0° and 90° is used as the first predeterminable value range. In addition, for example, a value range with an angle range between 0° and 90° is used as the second predeterminable value range. The following fact is explicitly mentioned: the present invention is not limited to the aforementioned angles. Instead, any angle suitable for the present invention can be used. According to another embodiment of the method of the present invention, the first predeterminable value range is set to be used as the second predeterminable value range. In other words, for example, the first predeterminable value range and the second predeterminable value range are the same.

[0139] In method step S5 of the method according to the present invention, it is provided to use the first detector unit 14 and / or the second detector unit 8 to detect first interaction particles and / or first interaction radiation. For example, the first detector unit 14 and / or the second detector unit 8 are used to detect secondary particles, in particular secondary electrons or secondary ions, and / or backscattered particles, in particular electrons backscattered from the object 15 (backscattered electrons). For example, x-ray radiation and / or cathode luminescence are detected as first interaction radiation. When a primary electron beam is incident on the object 15, first interaction particles and / or first interaction radiation are generated by the interaction between the primary electron beam and the object 15. A first detection signal is generated using the detected first interaction particles and / or the detected first interaction radiation. Further, the first detection signal is used by the control device 123 to generate a first image of the object 15.

[0140] Method step S6 provides for using the control device 123 to select at least one value of a further control parameter for controlling at least one functional unit of the SEM 100. For example, the further control parameter is also a physical quantity, in particular a control current or a control voltage, and is also, for example, a ratio of physical quantities, in particular an amplification of the physical quantity. The value of the physical quantity can be set, for example, on the control device 123 or the control device can be used to set and control and / or supply the functional unit of the SEM 100 so that the desired physical effect is generated, such as generating a specific magnetic field and / or an electrostatic field. Examples of control parameters have been further explained above. Reference is made to the explanations of the control parameter examples above, which also apply here. According to one embodiment of the method of the present invention, the control parameter and the further control parameter are set to be the same. Therefore, the value of the control parameter is the first value and the value of the further control parameter is the second value.

[0141] A functional unit to be controlled by a further control parameter is also to be understood as any structural unit of the SEM 100 that can be set in any way. For example, the position of the functional unit in the SEM 100 can be set. In addition or in an alternative, the electrostatic and / or magnetic embodiment of the functional unit is set so as to intentionally influence the guidance of the primary electron beam in the SEM 100 and / or the shape of the primary electron beam. The present invention is not limited to the aforementioned setting options. Instead, the functional unit can be set in any way suitable for the present invention. In addition, for example, the functional unit is formed as a single functional unit or includes a plurality of functional units. In particular, the functional unit controlled by the control parameter and the functional unit controlled by the further control parameter are set to be the same or different. For example, for the method according to the invention, the following structural units of the SEM 100 can be used as functional units to be controlled using additional control parameters or are used as functional units: beam generator 1, extraction electrode 2, control electrode 3, anode 4, first condenser lens 5, second condenser lens 6 (if present), aperture unit 7, first deflection device 9, objective lens 10, second deflection device 12 and / or object carrier 19.

[0142] In method step S7, provision is made to control one, a plurality of or all of the aforementioned functional units using the value of the further control parameter using the control device 123. This control causes the primary electron beam to be directed from the beam generator 1 in the direction of the object 15 along a second beam path of the SEM 100. Actuating the functional unit, a plurality of or all of the functional units using the value of the further control parameter substantially sets a second operating mode of the SEM 100. In this second operating mode of the SEM 100, the primary electron beam travels along the second beam path.

[0143] In method step S8, the primary electron beam is now directed to a predeterminable location of the scanning area on the surface of the object 15 using the first deflection device 9 and the second deflection device 12. Specifically, the first deflection device 9 is arranged at a third angle α relative to the optical axis 20. 2 The primary electron beam is directed away from the optical axis 20. In addition, the second deflection device 12 is arranged at a fourth angle β relative to the optical axis 20. 2 The primary electron beam is directed toward the direction of the optical axis 20. When the primary electron beam is directed to a predetermined position, the third angle α 2 After a third predeterminable value range, the fourth angle β 2 The fourth predeterminable value range is passed while the primary electron beam remains at a predeterminable position at the predeterminable position VP (see Figure 1 ). In other words, a method known as "swaying beam" is performed at a predeterminable position. For example, in a further embodiment of the method according to the invention, a third angle α is used. 2 As the fourth angle β 2 In other words, the third angle α 2 and the fourth angle β 2 Correspondingly, when controlling the functional unit, multiple functional units or all functional units with the value of the additional control parameter, (i) the first deflection device 9 is at a third angle α relative to the optical axis 20. 2 The primary electron beam is directed away from the optical axis 20, and (ii) the second deflection device 12 is then rotated at a third angle α relative to the optical axis 20. 2 The primary electron beam is directed back in the direction of the optical axis 20. For example, a value range with an angle range between 0° and 90° is used as the third predeterminable value range. In addition, for example, a value range with an angle range between 0° and 90° is used as the fourth predeterminable value range. The following fact is explicitly mentioned: the present invention is not limited to the aforementioned angles. Instead, any angle suitable for the present invention can be used. According to another embodiment of the method of the present invention, the third predeterminable value range is set to be used as the fourth predeterminable value range. In other words, for example, the third predeterminable value range and the fourth predeterminable value range are the same.

[0144] In method step S9 of the method according to the present invention, it is set to use the first detector unit 14 and / or the second detector unit 8 to detect second interaction particles and / or second interaction radiation. For example, the first detector unit 14 and / or the second detector unit 8 are used to detect secondary particles, in particular secondary electrons or secondary ions, and / or backscattered particles, in particular electrons backscattered from the object 15 (backscattered electrons). For example, x-ray radiation and / or cathode luminescence are detected as second interaction radiation. When the primary electron beam is incident on the object 15, second interaction particles and / or second interaction radiation are generated by the interaction between the primary electron beam and the object 15. The detected second interaction particles and / or the detected second interaction radiation are used to generate a second detection signal. Further, the second detection signal is used by the control device 123 to generate a second image of the object 15.

[0145] In method step S10, the control device 123 is now used to set the size, shape and / or position of the opening of the aperture unit 7 of the SEM 100. For example, this sets the beam current of the primary electron beam and / or the convergence angle of the primary electron beam relative to the optical axis 20. In addition or in an alternative, at least one electrostatic and / or magnetic deflection unit of the SEM 100 is set. The deflection unit is implemented, for example, as a first deflection device 9 and / or a second deflection device 12. However, the present invention is not limited to the aforementioned deflection units. Rather, any electrostatic and / or magnetic deflection unit of the SEM 100 that is suitable for deflecting the primary electron beam can be used as a deflection unit. When setting the aperture unit 7 and / or the deflection unit, the scanning area is shifted so that a first irradiation direction of the particle beam in the form of a primary electron beam in the direction of a predeterminable position VP on the surface of the object 15 corresponds to a second irradiation direction of the particle beam in the form of a primary electron beam in the direction of a predeterminable position VP on the surface of the object 15, wherein the first irradiation direction is determined according to the first image, and wherein the second irradiation direction is determined according to the second image. In accordance with Figure 2A In an embodiment, for example, the first deflection unit 131 and / or the second deflection unit 132 are adjusted until the first illumination direction corresponds to the second illumination direction. For example, the first image is compared with the second image in order to determine the first illumination direction and the second illumination direction, wherein, for example, the first image and the second image are superimposed. For example, the identifiable Kikuchi lines in the two images are aligned with each other. In addition or in an alternative, it is provided to align the lines determined in the two images using a Hough transform. In addition or in an alternative, it is provided to determine the deviation of the first image and the second image using an image recognition system. The aforementioned settings, such as the superposition of the first image and the second image, are implemented until the deviation no longer exists or exists only to a small extent. Then, the first illumination direction corresponds to the second illumination direction.

[0146] refer to Figure 7 and Figure 8 Explain method step S10 in more detail. Figure 7 In an embodiment of the present invention, the size, shape and / or position of the opening of the aperture unit 7 of the SEM 100 is set so that the first illumination direction corresponds to the second illumination direction. Then, Figure 7 , along which the primary electron beam PE1 travels in the first operating mode of the SEM 100, and Figure 7 The second beam path SV2 shown in , along which the primary electron beam PE2 travels in the second operation mode of the SEM 100 , is incident on the surface of the object 15 at the same position, specifically at a predeterminable position VP.

[0147] In accordance with Figure 8 In an embodiment of the present invention, the first deflection device 9 and the second deflection device 12 are used as electrostatic and / or magnetic deflection units. When the deflection unit of the SEM 100 is set, the scanning area is shifted so that the first irradiation direction corresponds to the second irradiation direction. Then, the first beam path SV1 (along which the primary electron beam PE1 travels in the first operating mode of the SEM 100) and the second beam path SV2 (along which the primary electron beam PE2 travels in the second operating mode of the SEM 100) are aligned with each other. The primary electron beam PE1 in the first operating mode of the SEM 100 and the second primary electron beam PE2 in the second operating mode of the SEM 100 are both incident at the same position on the surface of the object 15. This position is a predeterminable position VP.

[0148] The present invention recognizes that applying a method called "swinging beam" in different operating modes of the SEM 100 allows the different beam paths SV1 and SV2 caused by the different operating modes of the SEM 100 to be aligned with each other or mergeable. The present invention ensures that in the different operating modes, the primary electron beams PE1 and PE2 are firstly directed to the same location on the object 15 (specifically the predeterminable position VP) and secondly have the same orientation relative to the object 15, so that the same lattice planes of the crystal lattice of the object 15 are measured in the crystalline object 15.

[0149] All embodiments of the method according to the present invention hereinabove and hereinafter are not limited to the order of the method steps mentioned. The present invention also includes different orders of the method steps suitable for solving the problems within the meaning of the present invention. In an alternative or in addition thereto, the method according to the present invention is also provided with at least two method steps being implemented in parallel. In addition, the embodiments of the method according to the present invention hereinabove and hereinafter are not limited to the complete scope of all method steps mentioned further above or further below. Specifically, it is provided that in another embodiment, a single or multiple method steps in the above or below are omitted.

[0150] The features of the invention disclosed in the present description, the drawings and the claims may be essential for realizing the invention in its different embodiments, either individually or in any desired combination. The invention is not limited to the described embodiments. Within the scope of the claims and taking into account the knowledge of the relevant person skilled in the art, variations are possible.

[0151] List of Reference Numerals

[0152] 1 beam generator

[0153] 2. Extraction electrode

[0154] 3 Control electrode

[0155] 4 Anode

[0156] 5. First beam focusing lens

[0157] 6 Second beam focusing lens

[0158] 7 Aperture unit

[0159] 8 Second detector unit

[0160] 9 First guiding device / first deflecting device

[0161] 10 Objective lens

[0162] 11 Toroidal Coil

[0163] 12. Second guiding device / second deflecting device

[0164] 13. Sample Room

[0165] 14. First detector unit

[0166] 15 Objects

[0167] 16 Object Plane

[0168] 17 Pressure level aperture mounting

[0169] 18 Aperture

[0170] 19 Object carrier

[0171] 20 Optical axis

[0172] 21 bundle guide tube

[0173] 22 Pole Shoes

[0174] 23 Pole shoe gap

[0175] 25 Mobile Devices

[0176] 100 SEM

[0177] 101 Electron Source

[0178] 102 Leading electrode

[0179] 103 Anode

[0180] 104 beam guide tube

[0181] 105 First beam focusing lens

[0182] 106 Second beam focusing lens

[0183] 107 First Objective

[0184] 108 First aperture unit

[0185] 108A First aperture

[0186] 109 Second aperture unit

[0187] 110 pole shoes

[0188] 111 Coil

[0189] 112 Single Electrode

[0190] 113 Tubular Electrode

[0191] 114 Object Holder

[0192] 115 Second guiding device / second deflecting device

[0193] 116 First Detector

[0194] 116A Backscatter Grating

[0195] 117 Second Detector

[0196] 118 Second Aperture

[0197] 119 Chamber Detector

[0198] 120 Sample Room

[0199] 121 Third Detector

[0200] 122 Object carrier

[0201] 123 Control Device

[0202] 124 Monitor

[0203] 125 Objects

[0204] 126 Database

[0205] 127 processors

[0206] 130 First guiding device / first deflecting device

[0207] 131 First deflection unit

[0208] 132 Second deflection unit

[0209] 200 combined equipment

[0210] 201 Sample Room

[0211] 300 Ion Beam Equipment

[0212] 301 Ion Beam Generator

[0213] 302 Extraction electrode in ion beam equipment

[0214] 303 Focusing lens

[0215] 304 Second objective lens

[0216] 306 Settable or selectable aperture

[0217] 307 First guiding device / first deflecting device

[0218] 308 Second guiding device / second deflecting device

[0219] 500 Radiation Detector

[0220] 600 First moving element

[0221] 601 Housing

[0222] 602 Second moving element

[0223] 603 first rotation axis of the carrier

[0224] 604 Third moving element

[0225] 605 Fourth moving element

[0226] 606 Fifth moving element

[0227] 607 The second rotation axis of the stage

[0228] 608 Drive Control Unit

[0229] M1 First drive unit

[0230] M2 Second drive unit

[0231] M3 Third Drive Unit

[0232] M4 Fourth Drive Unit

[0233] M5 Fifth Drive Unit

[0234] 709 First Beam Axis

[0235] 710 Second beam axis

[0236] A Distance

[0237] A1 Distance

[0238] A2 Distance

[0239] OA optical axis

[0240] PE1 Primary electron beam in the first operating mode

[0241] PE2 Primary electron beam in the second operating mode

[0242] S1 to S10 Method steps

[0243] SV1 First beam path

[0244] SV2 Second beam path

[0245] VP can reserve a place

[0246] α 1 First Angle

[0247] α 2 The third angle

[0248] β 1 Second Angle

[0249] β 2 The fourth angle

Claims

1. A method for operating a particle beam device (100, 200, 300) for processing, imaging and / or analyzing an object (15, 125), wherein: The method comprises the following method steps: - using a beam generator (1, 101, 301) of the particle beam device (100, 200, 300) to generate a particle beam (PE1, PE2), the particle beam (PE1, PE2) containing charged particles; - using a control device (123) to select at least one value of at least one control parameter for controlling at least one functional unit (1, 2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 22, 101, 102, 103, 105, 106, 107, 108, 109, 110, 111, 112, 113, 115, 122, 130, 131, 132, 301, 302, 303, 304, 306, 307, 308) of the particle beam device (100, 200, 300); - using a control device (123) of the particle beam device (100, 200, 300) to control the functional unit (1, 2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 22, 101, 102, 103, 105, 106, 107, 108, 109, 110, 111, 112, 113, 115, 122, 130, 131, 132, 301, 302, 303, 304, 306, 307, 308) with the value of the control parameter, whereby the particle beam (PE1, PE2) is guided along a first beam path (SV1) of the particle beam device (100, 200, 300) from the beam generator (1, 101, 301) in the direction of the object (15, 125); - guiding the particle beam (PE1, PE2) to a location (VP) of a scanning area on the surface of the object (15, 125) using a first guiding device (9, 130, 131, 307) configured to guide the particle beam (PE1, PE2) and a second guiding device (12, 115, 132, 308) configured to guide the particle beam (PE1, PE2), wherein the first guiding device (9, 130, 131, 307) is arranged on and / or in the particle beam device (100, 200, 300) in front, followed by the second guiding device (12, 115, 132, 308), wherein the first guiding device (9, 130, 131, 307) is arranged in a manner relative to the particle beam device (100, 200, 300) when viewed from the beam generator (1, 101, 301) in the direction of the object (15, 125). 0), wherein the particle beam (PE1, PE2) is guided away from the optical axis (20, 709, 710, OA, OA1, OA2) at a first angle (α1, α2, β1, β2) with respect to the optical axis (20, 709, 710, OA, OA1, OA2), wherein the second guiding device (12, 115, 132, 308) guides the particle beam (PE1, PE2) in the direction of the optical axis (20, 709, 710, OA, OA1, OA2) at a second angle (α1, α2, β1, β2) relative to the optical axis (20, 709, 710, OA, OA1, OA2), wherein when the particle beam (PE1, PE2) is guided to the position (VP), the first angle (α1, α2, β1, β2) passes through a first predeterminable value range, and the second angle (α1, α2, β1, β2) passes through a second predeterminable value range; - using at least one detector (8, 14, 116, 117, 119, 121, 500) to detect first interaction particles and / or first interaction radiation, wherein the first interaction particles and / or the first interaction radiation are generated by the interaction of the particle beam (PE1, PE2) with the object (15, 125) when the particle beam (PE1, PE2) is incident on the object (15, 125); - generating a first detection signal using the detected first interacting particles and / or the detected first interacting radiation; - using these first detection signals by the control device (123) to generate a first image of the object (15, 125); - selecting at least one value of a further control parameter for controlling the functional unit (1, 2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 22, 101, 102, 103, 105, 106, 107, 108, 109, 110, 111, 112, 113, 115, 122, 130, 131, 132, 301, 302, 303, 304, 306, 307, 308); - using the control device (123) to control the functional unit (1, 2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 22, 101, 102, 103, 105, 106, 107, 108, 109, 110, 111, 112, 113, 115, 122, 130, 131, 132, 301, 302, 303, 304, 306, 307, 308) with the value of the further control parameter, whereby the particle beam (PE1, PE2) is guided along a second beam path (SV2) of the particle beam device (100, 200, 300) from the beam generator (1, 101, 301) in the direction of the object (15, 125); - using the first guiding device (9, 130, 131, 307) and the second guiding device (12, 115, 132, 308) to guide the particle beam (PE1, PE2) to a location (VP) on the surface of the object (15, 125), wherein the first guiding device (9, 130, 131, 307) guides the particle beam (PE1, PE2) away from the optical axis (20, 709, 710, OA, OA1, OA2) at a third angle (α1, α2, β1, β2) relative to the optical axis (20, 709, 710, OA, OA1, OA2), wherein the second guiding device (12, 115, 132, 308) guides the particle beam (PE1, PE2) in the direction of the optical axis (20, 709, 710, OA, OA1, OA2) at a fourth angle (α1, α2, β1, β2) relative to the optical axis (20, 709, 710, OA, OA1, OA2), wherein when the particle beam (PE1, PE2) is guided to the position (VP), the third angle (α1, α2, β1, β2) passes through a third predeterminable value range, and the fourth angle (α1, α2, β1, β2) passes through a fourth predeterminable value range; - using the detector (8, 14, 116, 117, 119, 121, 500) to detect second interaction particles and / or second interaction radiation, wherein the second interaction particles and / or the second interaction radiation are generated by the interaction of the particle beam (PE1, PE2) with the object (15, 125) when the particle beam (PE1, PE2) is incident on the object (15, 125); - generating a second detection signal using the detected second interacting particles and / or the detected second interacting radiation; - using these second detection signals by the control device (123) to generate a second image of the object (15, 125); and - using the control device (123) to set (i) the position and / or the size and / or shape of the opening of an aperture unit (7, 108, 109, 306) of the particle beam device (100, 200, 300), and / or (ii) at least one electrostatic and / or magnetic deflection unit (2, 3, 4, 5, 6, 9, 10, 11, 12, 22, 102, 103, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137, 138, 139, 140, 141, 142, 143, 144, 145 13, 115, 122, 130, 131, 132, 302, 303, 304, 306, 307, 308) to shift the scanning area so that a first irradiation direction of the particle beam in the direction of a site (VP) on the surface of the object (15, 125) corresponds to a second irradiation direction of the particle beam in the direction of a site (VP) on the surface of the object (15, 125), wherein the first irradiation direction is determined based on the first image, and wherein the second irradiation direction is determined based on the second image.

2. The method according to claim 1, wherein: The value of the control parameter is a first value, wherein the value of the further control parameter is a second value, and wherein the method comprises: - Using the control parameter as the further control parameter.

3. The method according to claim 1 or 2, wherein: The method comprises at least one of the following method steps: (i) using the first angle (α1, α2, β1, β2) as the second angle (α1, α2, β1, β2); (ii) The third angle (α1, α2, β1, β2) is used as the fourth angle (α1, α2, β1, β2).

4. A method according to any one of the preceding claims, wherein: The method comprises at least one of the following method steps: (i) using the first predeterminable range of values ​​of an angle between 0° and 90°; (ii) using the second predeterminable range of values ​​with an angle range between 0° and 90°; (iii) using the third predeterminable range of values ​​with an angle range between 0° and 90°; (iv) using the fourth predeterminable range of values ​​of angles between 0° and 90°; (v) using the first predeterminable value range as the second predeterminable value range; (vi) Using the third predeterminable value range as the fourth predeterminable value range.

5. A method according to any one of the preceding claims, wherein: The method comprises at least one of the following method steps: (i) using the beam generator (1, 101, 301) as the functional unit in order to set the particle current of the particle beam (PE1, PE2) supplied to the object (15, 125); (ii) using the aperture unit (7, 108, 109, 306) as the functional unit to set the convergence angle of the particle beam (PE1, PE2); (iii) using a first focusing lens (5, 6, 105, 106, 303) of the particle beam device (100, 200, 300) as the functional unit; (iv) using the second condenser lens (5, 6, 105, 106, 303) of the particle beam device (100, 200, 300) as the functional unit.

6. A method according to any one of the preceding claims, wherein: The method comprises at least one of the following method steps: (i) detecting backscattered particles as first interacting particles; (ii) detecting backscattered particles as second interacting particles; (iii) detecting backscattered electrons as first interacting particles; (iv) Detection of backscattered electrons as second interacting particles.

7. A computer program product having a program code which can be loaded into a processor (127) and which, when executed, controls a particle beam system (100, 200, 300) such that the method according to at least one of the preceding claims is carried out.

8. A particle beam device (100, 200, 300) for processing, imaging and / or analyzing an object (15, 125), the particle beam device comprising: at least one beam generator (1, 101, 301) for generating a particle beam (PE1, PE2) having charged particles, at least one aperture unit (7, 108, 109, 306) for setting the particle beam (PE1, PE2), at least one functional unit (1, 2, 3, 4, 5, 6, 9, 10, 11, 12, 22, 101, 102, 103, 105, 106, 107, 108, 109, 110, 111, 112, 113, 115, 122, 130, 301, 302, 303, 304, 306, 307, 308) for generating, setting, guiding and / or shaping the particle beam (PE1, PE2), at least one first guiding device (9, 130, 131, 307) for guiding the particle beam (PE1, PE2), at least one second guiding device (12, 115, 132, 308) for guiding the particle beam (PE1, PE2), at least one detector (8, 14, 116, 117, 119, 121, 500) for detecting interaction particles and / or interaction radiation generated by the interaction of the particle beam (PE1, PE2) with the object (15, 125) when the particle beam (PE1, PE2) is incident on the object (15, 125), - at least one electrostatic and / or magnetic deflection unit (2, 3, 4, 5, 6, 9, 10, 11, 12, 22, 102, 103, 105, 106, 107, 108, 109, 110, 111, 112, 113, 115, 122, 130, 131, 132, 302, 303, 304, 306, 307, 308), and - at least one control device (123) comprising a processor (127) in which a computer program product according to claim 7 is loaded.

9. The particle beam device (100, 200, 300) according to claim 8, wherein: The particle beam device (100, 200, 300) comprises at least one scanning device (9, 12, 115, 130, 307, 308) for raster scanning the particle beam (PE1, PE2) over the object (15, 125), and wherein: The scanning device (9, 12, 115, 130, 307, 308) comprises the first guiding device (9, 130, 307) and the second guiding device (12, 115, 308).

10. The particle beam device (100, 200, 300) according to claim 8 or 9, wherein: The particle beam device (100, 200, 300) comprises at least one objective lens (10, 107, 304) for focusing the particle beam (PE1, PE2) onto the object (15, 125).

11. The particle beam device (200) according to claim 10, wherein: The beam generator (101) is implemented as a first beam generator and the particle beam (PE1, PE2) is implemented as a first particle beam having first charged particles, wherein the objective lens (107) is implemented as a first objective lens for focusing the first particle beam (PE1, PE2) on the object (125), and wherein the particle beam device (200) further comprises: - at least one second beam generator (301) for generating a second particle beam (PE1, PE2) having second charged particles; and - at least one second objective lens (304) for focusing the second particle beam (PE1, PE2) onto the object (125).

12. The particle beam device (100, 200, 300) according to any one of claims 8 to 11, wherein: The electrostatic and / or magnetic deflection unit comprises a condenser lens (5, 6, 105, 106, 303) or a plurality of condenser lenses (5, 6, 105, 106, 303).

13. The particle beam device (100, 200, 300) according to any one of claims 8 to 12, wherein: The particle beam device is an electron beam device and / or an ion beam device.

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