Manufacturing method of grounding electrode edge sputtering layer suitable for diamond power load

Abstract

The invention relates to the technical field of electrode sputtering, in particular to a manufacturing method of a grounding electrode edge sputtering layer suitable for a diamond power load. The manufacturing method comprises the following steps: digging a through groove in a diamond substrate, and sequentially sputtering metal film layers on the front and back surfaces of the substrate, sputtered metal particles are deposited on the inner wall of a groove through a through groove in the surface of a substrate to achieve manufacturing of a side electrode seed layer of a product, then the sputtered substrate is immersed into an electroplating groove for electroplating, electroplating liquid circulates in a barrel groove, a metal film layer is electroplated to the surface of the inner wall of the groove, and therefore manufacturing of the grounding electrode product is achieved. And the edge sputtering layer of the grounding electrode product prepared by the method can meet the test of adhesive force and anti-shearing force, so that the yield and reliability of the grounding electrode product are greatly improved.

Description

Technical Field

[0001] The invention relates to the technical field of electrode sputtering, and in particular to a method for manufacturing a ground electrode edge sputtering layer suitable for diamond power load. Background Art

[0002] Diamond power loads are used for impedance matching and power absorption in RF circuits. The frequency band mainly covers the DC~Ku band, the operating temperature range is -55℃~+100℃, and the operating frequency band can reach 40GHz. It has the advantages of wide frequency response, small size, high power and light weight. It can be widely used in aerospace, radar, electronic countermeasures, microwave T / R components and other fields, and is an ideal choice for high-frequency and miniaturized equipment.

[0003] Diamond power loads require a ground electrode when in use. This ground electrode needs to be sputtered on the side of an extremely thin product (usually the height is the thickness of the substrate, i.e. 0.127, 0.254, 0.381 mm) to form an electrode layer metal (such as Figure 1 As shown in the figure, in the prior art, the electrode film layer at the edge of the ground electrode is usually deposited by particle diffraction in sputtering. The diffracted particles have an uncontrollable angle during the deposition process, resulting in an uncontrollable deposition effect. Specifically, excessive diffraction causes rainbow diffraction patterns to appear on the front of the product, and insufficient diffraction causes discontinuity of the electrode film layer on the side edge of the product ( Figure 2 described above).

[0004] In summary, in the prior art method for sputtering the electrode film layer at the edge of the ground electrode, there is a problem of low product process yield, which leads to worrying product reliability. Summary of the invention

[0005] The purpose of the present invention is to provide a method for manufacturing a sputtered layer at the edge of a ground electrode suitable for a diamond power load, so as to solve the problem of low product process yield and poor product reliability in the prior art method for sputtered electrode film layers at the edge of a ground electrode.

[0006] To achieve the above object, the present invention provides a method for manufacturing a sputtered layer on the edge of a ground electrode suitable for a diamond power load, the method comprising the following steps:

[0007] S1. Digging a through groove with a chamfer of a corresponding groove width on the surface of the diamond substrate by laser according to the thickness of the substrate;

[0008] S2, ultrasonically cleaning the grooved diamond substrate;

[0009] S3, placing the cleaned grooved diamond substrate on a sputtering tool in a set direction for sputtering, and after sputtering the front side of the grooved diamond substrate, turning the grooved diamond substrate over and sputtering the back side of the grooved diamond substrate;

[0010] S4, performing adhesive electroplating on the grooved diamond substrate of the sputtered seed layer;

[0011] S5, etching different shapes of design patterns on the grooved diamond substrate using etching technology;

[0012] S6, using a splitting technique to split the grooved diamond substrate to obtain a plurality of ground electrode products with edge sputtering layers;

[0013] S7. Inspect the side edges of the grounding electrode product.

[0014] Wherein, in step S1, the ratio of the thickness of the diamond substrate to the width of the through groove is 0.84:1 to 0.95:1, and when the through groove is dug out on the diamond substrate by laser, an ultraviolet picosecond laser is used at low power to perform zoom grooving.

[0015] Among them, in step S2, the specific steps of ultrasonically cleaning the grooved diamond substrate are: using concentrated sulfuric acid or concentrated hydrochloric acid to ultrasonically clean the grooved diamond substrate, and after acid washing, using deionized water and acid-base solvents to repeatedly ultrasonically clean the grooved diamond substrate.

[0016] Wherein, in step S3, the sputtering tooling is parallel to the sputtering target, and has a slide rail at the bottom that can reciprocate parallel to the target direction.

[0017] Among them, in step S5, the specific steps of using etching technology to etch design patterns of different shapes on the grooved diamond substrate are: use a spray machine to evenly spray positive photoresist on the rotating grooved diamond substrate, so that the front side of the grooved diamond substrate and the inner wall of the through groove are covered with photoresist, and then use an exposure machine to irradiate the pattern on the mask plate onto the positive photoresist through light, wash off the photoresist in the non-pattern area through development, and then immerse the grooved diamond substrate in the etching solution to etch away the film layer in the area not protected by the photoresist, so as to etch out the design pattern of the grounding electrode product.

[0018] Among them, in step S6, the grooved diamond substrate is split using the splitting technology to obtain multiple grounding electrode products with edge sputtering layers. The specific steps are: using the laser half-cutting technology, the grooved diamond substrate is laser-marked with a cutting path with a depth of 80% according to the size of the grounding electrode product, and then the staff wearing gloves manually pry open the grooved diamond substrate to obtain multiple grounding electrode products with edge sputtering layers.

[0019] Among them, in step S7, the specific steps of detecting the side edges of the grounding electrode product include: the staff uses visual inspection to detect the appearance of the sputtered layer on the side edges of the grounding electrode product, uses an adhesion detection method to detect the adhesion of the sputtered layer on the side edges of the grounding electrode product, and uses a shear force detection method to detect the shear resistance of the sputtered layer on the side edges of the grounding electrode product.

[0020] Among them, in step S7, the specific steps of using the adhesion detection method to detect the adhesion of the sputtered layer on the side edges of the grounding electrode product are: use the test tape to peel off the tape on the side of the grounding electrode, the grounding electrode is stuck to the tape, and after the air is removed, the tape is quickly pulled up. After peeling once, the magnification of the microscope is adjusted to 30 to 40 times, the side of the sputtered layer is facing up, and the focal length of the eyepiece is adjusted to make the image clear, and the defective products with peeling of the metal layer on the side of the product are sorted out.

[0021] The present invention discloses a method for manufacturing a sputtered layer on the edge of a grounding electrode suitable for a diamond power load. The method comprises the following steps: digging a through groove in a diamond substrate, sequentially sputtering a metal film layer on the front and back surfaces of the substrate, and allowing the sputtered metal particles to be deposited on the inner wall of the groove through the through groove on the surface of the substrate to realize the manufacturing of a side electrode seed layer of the product. The sputtered substrate is then immersed in an electroplating tank for electroplating. The electroplating solution flows in the barrel tank and the metal film layer is electroplated on the inner wall surface of the tank, thereby realizing the manufacturing of a grounding electrode product. The sputtered layer on the edge of the grounding electrode product prepared by the above method can meet the tests of adhesion and shear resistance, thereby greatly improving the yield and reliability of the grounding electrode product. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0023] Figure 1 It is a structural schematic diagram of a grounding electrode product suitable for diamond power loads targeted by the present invention.

[0024] Figure 2 It is a schematic diagram of the edge problem of the ground electrode product solved by the present invention.

[0025] Figure 3 It is a schematic diagram of the sputtering process provided by the present invention.

[0026] Figure 4The present invention is a flowchart of the steps of the method for manufacturing the sputtering layer of the edge of the ground electrode suitable for diamond power load. DETAILED DESCRIPTION

[0027] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0028] See also Figure 3 and Figure 4 The present invention provides a method for manufacturing a sputtered layer on the edge of a ground electrode suitable for a diamond power load, and the method for manufacturing a sputtered layer on the edge of a ground electrode suitable for a diamond power load comprises the following steps:

[0029] S1. Digging a through groove with a chamfer of a corresponding groove width on the surface of the diamond substrate by laser according to the thickness of the substrate;

[0030] S2, ultrasonically cleaning the grooved diamond substrate;

[0031] S3, placing the cleaned grooved diamond substrate on a sputtering tool in a set direction for sputtering, and after sputtering the front side of the grooved diamond substrate, turning the grooved diamond substrate over and sputtering the back side of the grooved diamond substrate;

[0032] S4, performing adhesive electroplating on the grooved diamond substrate of the sputtered seed layer;

[0033] S5, etching different shapes of design patterns on the grooved diamond substrate using etching technology;

[0034] S6, using a splitting technique to split the grooved diamond substrate to obtain a plurality of ground electrode products with edge sputtering layers;

[0035] S7. Inspect the side edges of the grounding electrode product.

[0036] In this embodiment, a through groove is dug in a diamond substrate, and a metal film layer is sputtered on both sides of the substrate in turn, so that the sputtered metal particles are deposited on the inner wall of the groove through the through groove on the surface of the substrate to realize the production of the side electrode seed layer of the product. Then, the sputtered substrate is immersed in an electroplating tank for electroplating. The electroplating solution flows in the barrel tank and the metal film layer is electroplated to the inner wall surface of the tank, thereby realizing the production of the grounding electrode product. The edge sputtering layer of the grounding electrode product prepared by the above method can meet the adhesion and shear resistance tests, thereby greatly improving the yield and reliability of the grounding electrode product.

[0037] In step S1, since the narrower the width of the through groove is, the more difficult it is to dig the groove, and the wider the groove width is, the more fragile the substrate is and the lower the substrate utilization rate is, the ratio of the thickness of the diamond substrate to the width of the through groove is 0.84:1 to 0.95:1. When using a laser to dig a through groove on the diamond substrate, an ultraviolet picosecond laser is used at low power to perform zoom digging.

[0038] In step S2, the specific steps of ultrasonically cleaning the grooved diamond substrate are as follows: using concentrated sulfuric acid or concentrated hydrochloric acid to ultrasonically clean the grooved diamond substrate to prevent carbon slag generated by the high heat of the laser from adhering to the groove wall and affecting the adhesion of the sputtered film layer; after pickling, using deionized water and acid-base solvents to repeatedly ultrasonically clean the diamond substrate to remove oil stains, attached carbon slag and other impurities on the diamond surface.

[0039] In step S3, the sputtering tool is parallel to the sputtering target, and the bottom is provided with a slide rail that can reciprocate parallel to the target direction, so that during sputtering, the angles at which the sputtered particles are deposited on the substrate surface and the inner wall surface of the groove are always within a certain range of angles, which can be controlled by the controllable changes in the moving speed control of the sputtering tool (such as Figure 3 shown).

[0040] In step S4, the thickness of the electrode layer on the inner wall of the groove, the front side of the substrate, and the back side of the substrate is uniformly thickened by electroplating treatment using the fluidity of the electroplating solution.

[0041] In step S5, the specific steps of using etching technology to etch design patterns of different shapes on the grooved diamond substrate are as follows: use a spray machine to evenly spray positive photoresist on the rotating grooved diamond substrate, so that the front side of the grooved diamond substrate and the inner wall of the through groove are covered with photoresist, and then use an exposure machine to irradiate the pattern on the mask plate onto the positive photoresist through light, wash off the photoresist in the non-pattern area through development, and then immerse the grooved diamond substrate in the etching solution to etch away the film layer in the area not protected by the photoresist, so as to etch out the design pattern of the grounding electrode product.

[0042] In step S6, the grooved diamond substrate is split using the splitting technology to obtain multiple grounding electrode products with edge sputtering layers. The specific steps are: using the laser half-cutting technology, the grooved diamond substrate is laser-marked with a cutting path of 80% depth according to the size of the grounding electrode product, and then the staff wearing gloves manually pry open the grooved diamond substrate to obtain multiple grounding electrode products with edge sputtering layers.

[0043] In step S7, the specific steps of inspecting the side edges of the grounding electrode product include: the staff visually inspects the appearance of the sputtered layer on the side edges of the grounding electrode product, inspects the adhesion of the sputtered layer on the side edges of the grounding electrode product using an adhesion detection method, and inspects the shear resistance of the sputtered layer on the side edges of the grounding electrode product using a shear resistance detection method.

[0044] Among them, the specific steps of using the adhesion detection method to detect the adhesion of the sputtered layer on the side edges of the grounding electrode product are: use the test tape to peel off the tape on the side of the grounding electrode, the grounding electrode is stuck to the tape, and after the air is removed, the tape is quickly pulled up. After peeling it once, adjust the magnification of the microscope to 30-40 times, turn the sputtered layer side upward, and adjust the eyepiece focus to make the image clear, and sort out the unqualified products with peeling metal layer on the side of the product. Here, the basis for judging whether it is qualified is that there should be no metal layer remaining after the test tape is torn, and there should be no defects in the metal layer on the side and edges of the product under the microscope.

[0045] Secondly, the specific steps for testing the shear resistance of the sputtered layer on the side edges of the grounding electrode product using the shear resistance test method are as follows: through the test specified in Method 2019.2 in GJB548B-2005, the bonding attachment area is the product area (length * width), and force is applied at the center of the long side, which is 2.0 times the specified applied force. The applied force should shear the product from the carrier or apply it to the maximum thrust of the equipment.

[0046] What is disclosed above is only a preferred embodiment of the present invention, and it certainly cannot be used to limit the scope of rights of the present invention. Ordinary technicians in this field can understand that all or part of the processes of the above embodiment and equivalent changes made according to the claims of the present invention still fall within the scope of the invention.

Claims

1. A method for manufacturing a sputtered layer on the edge of a ground electrode suitable for diamond power load, characterized in that: The steps include: S1. Digging a through groove with a chamfer of a corresponding groove width on the surface of the diamond substrate by laser according to the thickness of the substrate; S2, ultrasonically cleaning the grooved diamond substrate; S3, placing the cleaned grooved diamond substrate on a sputtering tool in a set direction for sputtering, and after sputtering the front side of the grooved diamond substrate, turning the grooved diamond substrate over and sputtering the back side of the grooved diamond substrate; S4, performing adhesive electroplating on the grooved diamond substrate of the sputtered seed layer; S5, etching different shapes of design patterns on the grooved diamond substrate using etching technology; S6, using a splitting technique to split the grooved diamond substrate to obtain a plurality of ground electrode products with edge sputtering layers; S7. Inspect the side edges of the grounding electrode product.

2. The method for manufacturing a sputtered layer on the edge of a ground electrode suitable for diamond power load according to claim 1, characterized in that: In step S1, the ratio of the thickness of the diamond substrate to the width of the through groove is 0.84:1 to 0.95:

1. When the through groove is dug on the diamond substrate by laser, an ultraviolet picosecond laser is used at low power to perform zoom grooving.

3. The method for manufacturing a sputtered layer on the edge of a ground electrode suitable for diamond power load according to claim 2, characterized in that: In step S2, the specific steps of ultrasonically cleaning the grooved diamond substrate are: using concentrated sulfuric acid or concentrated hydrochloric acid to ultrasonically clean the grooved diamond substrate, and after acid cleaning, using deionized water and acid-base solvents to repeatedly ultrasonically clean the grooved diamond substrate.

4. The method for manufacturing a sputtered layer on the edge of a ground electrode suitable for diamond power load according to claim 3, characterized in that: In step S3, the sputtering tool is parallel to the sputtering target, and has a slide rail at the bottom that can reciprocate parallel to the target direction.

5. The method for manufacturing a sputtered layer on the edge of a ground electrode suitable for diamond power load according to claim 3, characterized in that: In step S5, the specific steps of using etching technology to etch design patterns of different shapes on the grooved diamond substrate are as follows: use a spray machine to evenly spray positive photoresist on the rotating grooved diamond substrate, so that the front side of the grooved diamond substrate and the inner wall of the through groove are covered with photoresist, and then use an exposure machine to irradiate the pattern on the mask plate onto the positive photoresist through light, wash off the photoresist in the non-pattern area through development, and then immerse the grooved diamond substrate in the etching solution to etch away the film layer in the area not protected by the photoresist, so as to etch out the design pattern of the grounding electrode product.

6. The method for manufacturing a sputtered layer on the edge of a ground electrode suitable for diamond power load according to claim 4, characterized in that: In step S6, the grooved diamond substrate is split using the splitting technology to obtain multiple grounding electrode products with edge sputtering layers. The specific steps are: using the laser half-cutting technology, the grooved diamond substrate is laser-marked with a cutting path of 80% depth according to the size of the grounding electrode product, and then the staff wearing gloves manually pry open the grooved diamond substrate to obtain multiple grounding electrode products with edge sputtering layers.

7. The method for manufacturing a sputtered layer on the edge of a ground electrode suitable for diamond power load according to claim 5, characterized in that: In step S7, the specific steps of inspecting the side edges of the grounding electrode product include: the staff visually inspects the appearance of the sputtered layer on the side edges of the grounding electrode product, inspects the adhesion of the sputtered layer on the side edges of the grounding electrode product using an adhesion detection method, and inspects the shear resistance of the sputtered layer on the side edges of the grounding electrode product using a shear resistance detection method.

8. The method for manufacturing the sputtered layer at the edge of a ground electrode suitable for diamond power load according to claim 7, characterized in that: In step S7, the specific steps of using the adhesion detection method to detect the adhesion of the sputtered layer on the side edge of the ground electrode product are as follows: Use the test tape to peel off the tape on the side of the ground electrode. The ground electrode is stuck to the tape. After the air is removed, quickly pull up the tape. After peeling it once, adjust the microscope magnification to 30-40 times, turn the sputtered layer side upward, and adjust the eyepiece focus to make the image clear, and sort out the defective products with peeling metal layer on the side of the product.

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