Compound semiconductor laser element

Abstract

The invention provides a compound semiconductor laser element which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and a multi-layer exciton binding energy regulation and control layer is arranged between the lower waveguide layer and the lower limiting layer. The electron affinity distribution characteristic and the electron mobility distribution characteristic of each exciton binding energy regulation and control layer are set, strong coupling between excitons and phonons is tuned, so that the excitons and the phonons between quantum confinement layers of the active layer and the lower waveguide layer are co-localized, the exciton energy is regulated and controlled, the strong coupling between the phonons of the active layer and laser photons is enhanced, and the quantum confinement effect is improved. Quantum conversion and interconnection of the active layer are enhanced; laser gain uniformity of the active layer is improved; exciton binding energy is reduced; constraint of crystal lattices on excitons is shielded; and the laser peak gain, the laser power and the slope efficiency are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a compound semiconductor laser element. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are big differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The lattice mismatch and large strain of the active layer induce a strong piezoelectric polarization effect, resulting in a strong QCSE quantum confined Stark effect that limits the improvement of the laser's electro-lasing gain; the quantum well polarization electric field increases the hole injection barrier, holes overflow the active layer, and other problems. The hole injection is uneven and the efficiency is low, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, making it more difficult for holes to transport in the quantum well, uneven carrier injection, and uneven gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency;

[0010] 2) The In component of the quantum well increases, In is prone to segregation, the exciton activation energy increases, the carriers are delocalized, the valence band step difference of the laser increases, the hole transport in the quantum well becomes more difficult, the carrier injection is uneven, and the gain is uneven;

[0011] 3) The increase of In component in quantum well will produce In component fluctuation and strain, broaden the laser gain spectrum and decrease the peak gain; the increase of In component in quantum well will cause poor thermal stability, and the growth of high-temperature p-type semiconductor and confinement layer will cause thermal degradation of active layer, reducing the quality of active layer and interface quality; the high defect density inside active layer, large mutual dissolution gap between InN and GaN, InN phase separation and segregation, thermal degradation and unsatisfactory crystal quality will lead to unsatisfactory quantum well quality and interface quality and increase non-radiative recombination centers. Summary of the invention

[0012] To solve one of the above technical problems, the present invention provides a compound semiconductor laser element.

[0013] An embodiment of the present invention provides a compound semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, an exciton binding energy regulation layer is arranged between the lower waveguide layer and the lower confinement layer, the exciton binding energy regulation layer comprises a first exciton binding energy regulation layer, a second exciton binding energy regulation layer and a third exciton binding energy regulation layer arranged in sequence from bottom to top, the first exciton binding energy regulation layer, the second exciton binding energy regulation layer and the third exciton binding energy regulation layer all have electron affinity distribution characteristics and electron mobility distribution characteristics;

[0014] The electron affinity of the first exciton binding energy regulating layer has a function y1=D+E*lnx1 / x1 curve distribution;

[0015] The electron affinity of the second exciton binding energy regulating layer has the function y2=Ax2 2 +Bx2+c(A<0) curve distribution;

[0016] The electron affinity of the third exciton binding energy regulating layer has the function y3=F+G*ex3 / x3 third quadrant curve distribution;

[0017] The electron mobility of the first exciton binding energy regulating layer has the function y4=H+J*lnx1 / e x1 Curve distribution;

[0018] The electron mobility of the second exciton binding energy regulating layer has the function y5=I+M*e x2 sinx2 curve distribution;

[0019] The electron mobility of the third exciton binding energy regulating layer has a fourth quadrant curve distribution of function y6=N+P*x3 / sinx3;

[0020] Among them, x1 is the depth of the first exciton binding energy regulation layer towards the second exciton binding energy regulation layer, x2 is the depth of the second exciton binding energy regulation layer towards the third exciton binding energy regulation layer, and x3 is the depth of the third exciton binding energy regulation layer towards the lower waveguide layer.

[0021] Preferably, the electron affinity of the first exciton binding energy regulation layer is a, the electron affinity of the second exciton binding energy regulation layer is b, and the electron affinity of the third exciton binding energy regulation layer is c, wherein: 0.1≤a≤b≤c≤10.

[0022] Preferably, the electron mobility of the first exciton binding energy regulating layer is d, the electron mobility of the second exciton binding energy regulating layer is e, and the electron mobility of the third exciton binding energy regulating layer is f, wherein: 10cm 2 / Vsec≤d≤e≤f≤5000cm 2 / Vsec.

[0023] Preferably, the first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer also have electron effective mass distribution characteristics and separation energy distribution characteristics;

[0024] The electron effective mass of the first exciton binding energy regulating layer has the function y7=Q+R*sinx1 / x1 2 The first quadrant curve distribution;

[0025] The electron effective mass of the second exciton binding energy regulating layer has the function y8=S+T*e x2 cosx2 curve distribution;

[0026] The electron effective mass of the third exciton binding energy regulating layer has a function y9=U+V*sinx3 / x3 2 The third quadrant curve distribution;

[0027] The separation energy of the first exciton binding energy regulating layer has a function y 10 =W+Z*(e x1 +e -x1 ) / (e x1 -e -x1 ) The first quadrant curve distribution;

[0028] The separation energy of the second exciton binding energy regulating layer has a function y 11 =A2+B2*e x2 / cosx2 first and second quadrant curve distribution;

[0029] The separation energy of the third exciton binding energy regulating layer has a function y 12 =C2+D2*x3e x3 Curved distribution.

[0030] Preferably, the electron effective mass of the first exciton binding energy regulation layer is g, the electron effective mass of the second exciton binding energy regulation layer is h, and the electron effective mass of the third exciton binding energy regulation layer is i, wherein: 0.01≤g≤h≤i≤10.

[0031] Preferably, the separation energy of the first exciton binding energy regulating layer is j, the separation energy of the second exciton binding energy regulating layer is k, and the separation energy of the third exciton binding energy regulating layer is l, wherein: 0.5eV≤l≤k≤j≤10eV.

[0032] Preferably, the first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer also have an In / C element ratio distribution characteristic;

[0033] The In / C element ratio of the first exciton binding energy regulating layer is linearly distributed;

[0034] The In / C element ratio of the second exciton binding energy regulating layer has a function y=E2*x2 2 +F2*x2+G2 curve distribution, where E2<0;

[0035] The In / C element ratio of the third exciton binding energy regulating layer has a function y=H2+J2*e x3 / x3 third quadrant curve distribution.

[0036] Preferably, the first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer also have an In / H element ratio distribution characteristic;

[0037] The In / H element ratio of the first exciton binding energy regulation layer is linearly distributed;

[0038] The In / H element ratio of the second exciton binding energy regulating layer has a function y=K2+L2*e x2 sinx2 curve distribution;

[0039] The In / H element ratio of the third exciton binding energy regulating layer has a fourth quadrant curve distribution of the function y=M2+N2*x3 / sinx3.

[0040] Preferably, the first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer also have an In / O element ratio distribution characteristic;

[0041] The In / O element ratio of the first exciton binding energy regulating layer is linearly distributed;

[0042] The In / O element ratio of the second exciton binding energy regulating layer has the function y=P2+Q2*e x2 cosx2 curve distribution;

[0043] The In / O element ratio of the third exciton binding energy regulating layer has a function y=R2+S2*sinx3 / x3 2 The third quadrant curve distribution.

[0044] Preferably, the first exciton binding energy regulation layer, the second exciton binding energy regulation layer and the third exciton binding energy regulation layer are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Li3ScCl6, LiYBr6, BiVO4, C3N4, Nd2Fe 14 B. Any one or any combination of WSe2-hBN-MoS2.

[0045] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN , with a thickness of 10 angstroms to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

[0046] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0047] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0048] The beneficial effects of the present invention are as follows: the present invention sets a multi-layer exciton binding energy regulation layer structure between the lower waveguide layer and the lower confinement layer of the compound semiconductor laser element, and tunes the strong coupling between excitons and phonons by respectively setting the electron affinity energy distribution characteristics and the electron mobility distribution characteristics of each exciton binding energy regulation layer, so that the excitons and phonons between the quantum confinement layers of the active layer and the lower waveguide layer are co-localized, the exciton energy is regulated, the strong coupling between the phonons and laser photons of the active layer is enhanced, the quantum conversion and interconnection of the active layer are enhanced, the laser gain uniformity of the active layer is improved, the exciton binding energy is reduced, the lattice binding of the excitons is shielded, the carrier localization is enhanced, the carrier delocalization is suppressed, the step difference of the laser valence band is reduced, the spin polarization lifetime and the hole injection efficiency of the carriers in the active layer of the laser element are improved, and the laser peak gain, laser power and slope efficiency are improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0050] Figure 1 A schematic diagram of the structure of a compound semiconductor laser element according to an embodiment of the present invention;

[0051] Figure 2 This is a SIMS secondary ion mass spectrum of the compound semiconductor laser element described in an embodiment of the present invention.

[0052] Reference numerals:

[0053] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, upper confinement layer, 106, exciton binding energy regulation layer;

[0054] 106a, a first exciton binding energy regulating layer, 106b, a second exciton binding energy regulating layer, 106c, a third exciton binding energy regulating layer. DETAILED DESCRIPTION

[0055] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0056] like Figure 1 and Figure 2As shown, this embodiment provides a compound semiconductor laser element, comprising a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 arranged in sequence from bottom to top. An exciton binding energy regulating layer 106 is also arranged in the compound semiconductor laser element.

[0057] Specifically, in this embodiment, the compound semiconductor laser element is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 in order from bottom to top. The exciton binding energy regulation layer 106 is provided between the lower waveguide layer 102 and the lower confinement layer 101.

[0058] In this embodiment, the exciton binding energy regulation layer 106 is a multilayer structure, including a first exciton binding energy regulation layer 106a, a second exciton binding energy regulation layer 106b and a third exciton binding energy regulation layer 106c, wherein the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b and the third exciton binding energy regulation layer 106c are sequentially arranged from bottom to top. In the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b and the third exciton binding energy regulation layer 106c, there are electron affinity distribution characteristics and electron mobility distribution characteristics, which are specifically manifested as follows:

[0059] Electron affinity distribution characteristics:

[0060] The electron affinity of the first exciton binding energy regulating layer 106a has a function y1=D+E*lnx1 / x1 curve distribution;

[0061] The electron affinity of the second exciton binding energy regulating layer 106b has the function y2=Ax2 2 +Bx2+c(A<0) curve distribution;

[0062] The electron affinity of the third exciton binding energy regulating layer 106c has the function y3=F+G*e x3 / x3 third quadrant curve distribution;

[0063] Electron mobility distribution characteristics:

[0064] The electron mobility of the first exciton binding energy regulating layer 106a has the function y4=H+J*lnx1 / e x1 Curve distribution;

[0065] The electron mobility of the second exciton binding energy regulating layer 106b has the function y5=I+M*e x2 sinx2 curve distribution;

[0066] The electron mobility of the third exciton binding energy regulating layer 106c has a fourth quadrant curve distribution of function y6=N+P*x3 / sinx3;

[0067] Among them, x1 is the depth of the first exciton binding energy regulation layer 106a to the second exciton binding energy regulation layer 106b, x2 is the depth of the second exciton binding energy regulation layer 106b to the third exciton binding energy regulation layer 106c, and x3 is the depth of the third exciton binding energy regulation layer 106c to the lower waveguide layer 102.

[0068] In this embodiment, a multi-layer exciton binding energy regulation layer 106 structure is arranged between the lower waveguide layer 102 and the lower confinement layer 101 of the compound semiconductor laser element, and the electron affinity energy distribution characteristics and the electron mobility distribution characteristics of each exciton binding energy regulation layer 106 are set respectively to tune the strong coupling between the excitons and the phonons, so that the quantum confinement interlayer excitons and phonons of the active layer 103 and the lower waveguide layer 102 are co-localized, the exciton energy is regulated, the strong coupling between the phonons and the laser photons of the active layer 103 is enhanced, the quantum conversion and interconnection of the active layer 103 are enhanced, the laser gain uniformity of the active layer 103 is improved, the exciton binding energy is reduced, the lattice binding of the excitons is shielded, the carrier localization is enhanced, the carrier delocalization is suppressed, the step difference of the laser valence band is reduced, the spin polarization lifetime and the hole injection efficiency of the carriers in the active layer 103 of the laser element are improved, and the laser peak gain, laser power and slope efficiency are improved.

[0069] In some optional embodiments, the electron affinities of the first exciton binding energy regulating layer 106a, the second exciton binding energy regulating layer 106b, and the third exciton binding energy regulating layer 106c have the following relationship:

[0070] The electron affinity of the first exciton binding energy regulation layer 106a is a, the electron affinity of the second exciton binding energy regulation layer 106b is b, and the electron affinity of the third exciton binding energy regulation layer 106c is c, wherein: 0.1≤a≤b≤c≤10.

[0071] In some optional embodiments, the electron mobilities of the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b, and the third exciton binding energy regulation layer 106c have the following relationship:

[0072] The electron mobility of the first exciton binding energy regulating layer 106a is d, the electron mobility of the second exciton binding energy regulating layer 106b is e, and the electron mobility of the third exciton binding energy regulating layer 106c is f, wherein: 10cm 2 / Vsec≤d≤e≤f≤5000cm 2 / Vsec.

[0073] In some optional embodiments, the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b and the third exciton binding energy regulation layer 106c also have electron effective mass distribution characteristics and separation energy distribution characteristics, which are specifically manifested as follows:

[0074] Electron effective mass distribution characteristics:

[0075] The electron effective mass of the first exciton binding energy regulating layer 106a has the function y7=Q+R*sinx1 / x1 2 The first quadrant curve distribution;

[0076] The electron effective mass of the second exciton binding energy regulating layer 106b has the function y8=S+T*e x2 cosx2 curve distribution;

[0077] The electron effective mass of the third exciton binding energy regulating layer 106c has the function y9=U+V*sinx3 / x3 2 The third quadrant curve distribution;

[0078] Separation energy distribution characteristics:

[0079] The separation energy of the first exciton binding energy regulating layer 106a has a function y 10 =W+Z*(e x1 +e -x1 ) / (e x1 -e -x1 ) The first quadrant curve distribution;

[0080] The separation energy of the second exciton binding energy regulating layer 106b has a function y 11 =A2+B2*e x2 / cosx2 first and second quadrant curve distribution;

[0081] The separation energy of the third exciton binding energy regulating layer 106c has a function y 12 =C2+D2*x3e x3 Curved distribution.

[0082] In this embodiment, by designing the electron effective mass distribution characteristics and separation energy distribution characteristics of the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b and the third exciton binding energy regulation layer 106c, the exciton binding energy regulation layer 106 is regulated to produce spin-orbit coupling symmetry breaking between the active layer 103 and the lower waveguide layer 102, thereby causing energy level splitting, reducing the polarization effect, inhibiting the improvement of InN phase separation and thermal degradation of the active layer 103, reducing non-radiative recombination centers, inhibiting optical catastrophe of the laser, lowering the excitation threshold of the laser element, enhancing the electro-lasing gain and confinement factor, and improving the power and slope efficiency of the laser element.

[0083] In some optional embodiments, the electron effective masses of the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b, and the third exciton binding energy regulation layer 106c have the following relationship:

[0084] The electron effective mass of the first exciton binding energy regulation layer 106a is g, the electron effective mass of the second exciton binding energy regulation layer 106b is h, and the electron effective mass of the third exciton binding energy regulation layer 106c is i, wherein: 0.01≤g≤h≤i≤10.

[0085] In some optional embodiments, the separation energies of the first exciton binding energy regulating layer 106a, the second exciton binding energy regulating layer 106b, and the third exciton binding energy regulating layer 106c have the following relationship:

[0086] The separation energy of the first exciton binding energy regulation layer 106a is j, the separation energy of the second exciton binding energy regulation layer 106b is k, and the separation energy of the third exciton binding energy regulation layer 106c is l, wherein: 0.5eV≤l≤k≤j≤10eV.

[0087] In some optional embodiments, the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b and the third exciton binding energy regulation layer 106c also have specific element ratio distribution characteristics, including In / C element ratio distribution characteristics, In / H element ratio distribution characteristics and In / O element ratio distribution characteristics, which are specifically manifested as follows:

[0088] In / C element ratio distribution characteristics:

[0089] The In / C element ratio of the first exciton binding energy regulating layer 106a is linearly distributed;

[0090] The In / C element ratio of the second exciton binding energy regulating layer 106 b has a function y=E2*x2 2 +F2*x2+G2 curve distribution, where E2<0;

[0091] The In / C element ratio of the third exciton binding energy regulating layer 106c has the function y=H2+J2*e x3 / x3 third quadrant curve distribution;

[0092] In / H element ratio distribution characteristics:

[0093] The In / H element ratio of the first exciton binding energy regulating layer 106a is linearly distributed;

[0094] The In / H element ratio of the second exciton binding energy regulating layer 106 b has a function y=K2+L2*e x2 sinx2 curve distribution;

[0095] The In / H element ratio of the third exciton binding energy regulating layer 106 c has a fourth quadrant curve distribution of the function y=M2+N2*x3 / sinx3;

[0096] In / O element ratio distribution characteristics:

[0097] The In / O element ratio of the first exciton binding energy regulating layer 106a is linearly distributed;

[0098] The In / O element ratio of the second exciton binding energy regulating layer 106 b has a function y=P2+Q2*e x2 cosx2 curve distribution;

[0099] The In / O element ratio of the third exciton binding energy regulating layer 106c has a function y=R2+S2*sinx3 / x3 2 The third quadrant curve distribution.

[0100] In this embodiment, by designing specific In / C element ratio distribution characteristics, In / H element ratio distribution characteristics and In / O element ratio distribution characteristics in the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b and the third exciton binding energy regulation layer 106c, the In component fluctuation is suppressed, the value-added spectrum of the laser is narrowed, the InN phase separation and the thermal degradation of the active layer 103 are improved, the interface quality is improved, the non-radiative recombination centers are reduced, the optical catastrophe of the laser is suppressed, the excitation threshold of the laser element is lowered, the electro-lasing gain and the confinement factor are enhanced, and the optical catastrophe of the laser is suppressed.

[0101] In some optional embodiments, the first exciton binding energy regulation layer 106a, the second exciton binding energy regulation layer 106b and the third exciton binding energy regulation layer 106c are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Li3ScCl6, LiYBr6, BiVO4, C3N4, Nd2Fe 14 B. Any one or any combination of WSe2-hBN-MoS2.

[0102] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1.

[0103] Specifically, the well layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 to 100 angstroms.

[0104] The barrier layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 to 150 angstroms.

[0105] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0106] In some optional embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN xAny one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0107] The following table is a parameter comparison between a conventional semiconductor laser element and the compound semiconductor laser element proposed in this embodiment, including slope efficiency, threshold current density, optical power and optical catastrophe ratio, showing the difference between the conventional semiconductor laser element and the compound semiconductor laser element proposed in this embodiment:

[0108]

[0109] It can be seen that the compound semiconductor laser element proposed in this embodiment improves the slope efficiency and optical power, reduces the threshold current density and optical catastrophe ratio compared with the traditional semiconductor laser element, and has obvious advantages over the traditional semiconductor laser element.

[0110] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A compound semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: An exciton binding energy regulating layer is disposed between the lower waveguide layer and the lower confinement layer, the exciton binding energy regulating layer comprising a first exciton binding energy regulating layer, a second exciton binding energy regulating layer and a third exciton binding energy regulating layer disposed sequentially from bottom to top, the first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer all having electron affinity distribution characteristics and electron mobility distribution characteristics; The electron affinity of the first exciton binding energy regulating layer has a function y1=D+E*lnx1 / x1 curve distribution; The electron affinity of the second exciton binding energy regulating layer has the function y2=Ax2 2 +Bx2+c(A<0) curve distribution; The electron affinity of the third exciton binding energy regulating layer has the function y3=F+G*e x3 / x3 third quadrant curve distribution; The electron mobility of the first exciton binding energy regulating layer has the function y4=H+J*lnx1 / e x1 Curve distribution; The electron mobility of the second exciton binding energy regulating layer has the function y5=I+M*e x2 sinx2 curve distribution; The electron mobility of the third exciton binding energy regulating layer has a fourth quadrant curve distribution of function y6=N+P*x3 / sinx3; Among them, x1 is the depth of the first exciton binding energy regulation layer towards the second exciton binding energy regulation layer, x2 is the depth of the second exciton binding energy regulation layer towards the third exciton binding energy regulation layer, and x3 is the depth of the third exciton binding energy regulation layer towards the lower waveguide layer.

2. The compound semiconductor laser element according to claim 1, wherein: The electron affinity of the first exciton binding energy regulation layer is a, the electron affinity of the second exciton binding energy regulation layer is b, and the electron affinity of the third exciton binding energy regulation layer is c, wherein: 0.1≤a≤b≤c≤10.

3. The compound semiconductor laser element according to claim 1, wherein: The electron mobility of the first exciton binding energy regulating layer is d, the electron mobility of the second exciton binding energy regulating layer is e, and the electron mobility of the third exciton binding energy regulating layer is f, wherein: 10cm 2 / Vsec≤d≤e≤f≤5000cm 2 / Vsec.

4. The compound semiconductor laser element according to claim 1, wherein: The first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer also have electron effective mass distribution characteristics and separation energy distribution characteristics; The electron effective mass of the first exciton binding energy regulating layer has the function y7=Q+R*sinx1 / x1 2 The first quadrant curve distribution; The electron effective mass of the second exciton binding energy regulating layer has the function y8=S+T*e x2 cosx2 curve distribution; The electron effective mass of the third exciton binding energy regulating layer has a function y9=U+V*sinx3 / x3 2 The third quadrant curve distribution; The separation energy of the first exciton binding energy regulating layer has a function y 10 =W+Z*(e x1 +e -x1 ) / (e x1 -e -x1 ) The first quadrant curve distribution; The separation energy of the second exciton binding energy regulating layer has a function y 11 =A2+B2*e x2 / cosx2 first and second quadrant curve distribution; The separation energy of the third exciton binding energy regulating layer has a function y 12 =C2+D2*x3e x3 Curved distribution.

5. The compound semiconductor laser element according to claim 4, characterized in that The electron effective mass of the first exciton binding energy regulation layer is g, the electron effective mass of the second exciton binding energy regulation layer is h, and the electron effective mass of the third exciton binding energy regulation layer is i, wherein: 0.01≤g≤h≤i≤10.

6. The compound semiconductor laser element according to claim 4, characterized in that The separation energy of the first exciton binding energy regulation layer is j, the separation energy of the second exciton binding energy regulation layer is k, and the separation energy of the third exciton binding energy regulation layer is l, wherein: 0.5eV≤l≤k≤j≤10eV.

7. The compound semiconductor laser element according to claim 1, wherein: The first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer also have an In / C element ratio distribution characteristic; The In / C element ratio of the first exciton binding energy regulating layer is linearly distributed; The In / C element ratio of the second exciton binding energy regulating layer has a function y=E2*x2 2 +F2*x2+G2 curve distribution, where E2<0; The In / C element ratio of the third exciton binding energy regulating layer has a function y=H2+J2*e x3 / x3 third quadrant curve distribution.

8. The compound semiconductor laser element according to claim 1, wherein The first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer also have an In / H element ratio distribution characteristic; The In / H element ratio of the first exciton binding energy regulation layer is linearly distributed; The In / H element ratio of the second exciton binding energy regulating layer has a function y=K2+L2*e x2 sinx2 curve distribution; The In / H element ratio of the third exciton binding energy regulating layer has a fourth quadrant curve distribution of the function y=M2+N2*x3 / sinx3.

9. The compound semiconductor laser element according to claim 1, wherein: The first exciton binding energy regulating layer, the second exciton binding energy regulating layer and the third exciton binding energy regulating layer also have an In / O element ratio distribution characteristic; The In / O element ratio of the first exciton binding energy regulating layer is linearly distributed; The In / O element ratio of the second exciton binding energy regulating layer has the function y=P2+Q2*e x2 cosx2 curve distribution; The In / O element ratio of the third exciton binding energy regulating layer has a function y=R2+S2*sinx3 / x3 2 The third quadrant curve distribution.

10. The compound semiconductor laser element according to claim 1, wherein: The first exciton binding energy regulation layer, the second exciton binding energy regulation layer and the third exciton binding energy regulation layer are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Li3ScCl6, LiYBr6, BiVO4, C3N4, Nd2Fe 14 B. Any one or any combination of WSe2-hBN-MoS2; The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is 1. The thickness is 10 angstroms to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness is 10 angstroms to 150 angstroms; The lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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