H-bridge driving integrated circuit and motor driving system

Abstract

The invention provides an H-bridge driving integrated circuit and a motor driving system, and belongs to the technical field of integrated circuits. The circuit comprises a first bottom plate frame, a second bottom plate frame, a first chip and an integrated module, a first conductive adhesive is pasted on a first area of the first bottom plate frame, the first chip is pasted on the first area through the first conductive adhesive, a conductive adhesive is pasted on the second bottom plate frame, and the integrated module is pasted on the second bottom plate frame through the conductive adhesive; the first chip comprises a plurality of upper bridge power switch tubes, and the input end of each upper bridge power switch tube is connected with the power supply module through a first conductive adhesive; the integrated module comprises a driving control unit, a pre-driving unit and a plurality of lower bridge power switch tubes; and the output end of each lower bridge power switch tube is grounded through a conductive adhesive adhered to the second bottom plate frame. According to the invention, the packaging difficulty and packaging cost of the H-bridge driving integrated circuit can be reduced, and the reliability and anti-electromagnetic interference performance of the H-bridge driving integrated circuit can be improved.

Description

Technical Field

[0001] The present application relates to the field of integrated circuit technology, and in particular to an H-bridge driver integrated circuit and a motor drive system. Background Art

[0002] As a common electronic circuit structure, H-bridge driver integrated circuits are widely used in various occasions that require forward and reverse rotation, speed regulation and braking, such as DC motor drive, power tools, servo systems and stepper motor drive. Among them, the H-bridge driver integrated circuit is mainly composed of a main control module, a pre-driver module, an H-bridge power driver module and a power control module. The pre-driver module is used to convert the control signal output by the main control module into a power switch tube drive signal and send it to the H-bridge power driver module. The H-bridge power driver module provides the corresponding current to the external load under the action of the power switch tube drive signal.

[0003] In the related art, the H-bridge driver module, the pre-driver module and the power control module can generally be integrated on the same chip. The packaging method of the H-bridge driver integrated circuit often adopts monolithic integration process technology (Bipolar-CMOS-DMOS technology, referred to as BCD process) and multi-chip packaging process.

[0004] However, when packaging H-bridge driver integrated circuits based on related technologies, H-bridge driver integrated circuits packaged with BCD technology have problems such as complex packaging technology, high packaging cost, and poor electromagnetic anti-interference performance, and H-bridge driver integrated circuits packaged with multi-chips have problems such as complex packaging technology, many wires, high packaging cost, high difficulty in collecting operating status data, and low reliability. Therefore, the solutions of related technologies have problems such as complex packaging technology, high packaging cost, poor electromagnetic anti-interference performance, and poor reliability. Summary of the invention

[0005] The purpose of the present application is to provide an H-bridge driver integrated circuit and a motor drive system, which can reduce the packaging difficulty and packaging cost of the H-bridge driver integrated circuit and improve the reliability and anti-electromagnetic interference performance of the H-bridge driver integrated circuit.

[0006] The embodiment of the present application is implemented as follows:

[0007] In a first aspect of an embodiment of the present application, an H-bridge driver integrated circuit is provided, the H-bridge driver integrated circuit comprising: a first baseboard frame, a second baseboard frame, a first chip and an integrated module;

[0008] A first conductive adhesive is pasted on a first area of ​​the first base frame, and the first chip is pasted on the first area through the first conductive adhesive; a conductive adhesive is pasted on the second base frame, and the integrated module is pasted on the second base frame through the conductive adhesive;

[0009] The first chip includes a plurality of upper bridge power switch tubes, and the integrated module includes: a drive control unit, a high-side drive unit, a low-side drive unit, and a plurality of lower bridge power switch tubes;

[0010] The control end of each upper bridge power switch tube is connected to the output end of the high side drive unit, the input end of each upper bridge power switch tube is connected to the external power supply module through the first conductive adhesive, and the output end of each upper bridge power switch tube is connected to the control end of the driven motor;

[0011] The control end of each lower bridge power switch tube is connected to the output end of the low side drive unit, the input end of each lower bridge power switch tube is connected to the control end of the driven motor, and the output end of each lower bridge power switch tube is grounded through the conductive glue pasted on the second bottom plate frame;

[0012] The input end of the high-side driving unit and the input end of the low-side driving unit are connected to the driving control unit.

[0013] As a possible implementation method, each upper bridge power switch tube is a P-type metal oxide semiconductor transistor;

[0014] Each P-type metal oxide semiconductor transistor shares a concentrated N-type substrate and a light N-type epitaxial region, the concentrated N-type substrate is attached to a first region of a first base plate frame by a first conductive adhesive, the light N-type epitaxial region is arranged on the concentrated N-type substrate, a plurality of concentrated N-type current channels are arranged between the concentrated N-type substrate and an upper edge of the light N-type epitaxial region, a plurality of light boron drift regions are arranged in the light N-type epitaxial region, and an upper surface of each concentrated N-type current channel is aligned with an upper edge of the light N-type epitaxial region;

[0015] The source of each P-type metal oxide semiconductor transistor is arranged on the upper surface of a concentrated N-type current channel, the drain of each P-type metal oxide semiconductor transistor is arranged on the upper surface of a light boron drift region, and the gate of each P-type metal oxide semiconductor transistor is arranged between the source and the drain of each P-type metal oxide semiconductor transistor;

[0016] The source of each P-type metal oxide semiconductor transistor is connected to the external power module in sequence through the concentrated N-type current channel, the concentrated N-type substrate and the first conductive glue.

[0017] As a possible implementation method, each upper bridge power switch tube is an N-type metal oxide semiconductor transistor;

[0018] The drain of each N-type metal oxide semiconductor transistor is connected to the external power module through the first conductive glue, and the source of each N-type metal oxide semiconductor transistor is connected to the control end of the driven motor.

[0019] As a possible implementation, the integrated module includes: a second chip and a third chip; a second conductive adhesive is pasted on the second area of ​​the second base frame, and a third conductive adhesive is pasted on the third area of ​​the second base frame;

[0020] The second chip is attached to the second region via a second conductive adhesive, and the third chip is attached to the third region via a conductive adhesive;

[0021] The driving control unit, the high-side driving unit and the low-side driving unit are integrated on the second chip, and the plurality of lower bridge power switch tubes are integrated on the third chip;

[0022] The gate of each lower bridge power switch tube is connected to the output end of the low side drive unit through a metal wire.

[0023] As a possible implementation method, each lower bridge power switch tube is an N-type metal oxide semiconductor transistor;

[0024] The N-type metal oxide semiconductor transistor shares a concentrated boron substrate and a light boron epitaxial region, the concentrated boron substrate is adhered to the third region of the second base plate frame by a third conductive adhesive; the light boron epitaxial region is arranged on the concentrated boron substrate, and a plurality of concentrated boron current channels are arranged between the concentrated boron substrate and the upper edge of the light boron epitaxial region, and a plurality of light phosphorus drift regions are arranged in the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region;

[0025] The source of each N-type metal oxide semiconductor transistor is arranged on the upper surface of a concentrated boron current channel, the drain of each N-type metal oxide semiconductor transistor is arranged on the upper surface of a light phosphorus drift region, and the gate of each N-type metal oxide semiconductor transistor is arranged between the source and the drain of each N-type metal oxide semiconductor transistor;

[0026] The source of each N-type metal oxide semiconductor transistor is connected to the ground in sequence through the concentrated boron current channel, the concentrated boron substrate and the third conductive adhesive.

[0027] As a possible implementation, the integrated module includes: a fourth chip; a fourth conductive adhesive is attached to a fourth area of ​​the second base frame;

[0028] The driving control unit, the high-side driving unit, the low-side driving unit and the plurality of lower bridge power switch tubes are integrated on a fourth chip, and the fourth chip is attached to a fourth area of ​​the second bottom plate frame by a fourth conductive adhesive;

[0029] The gate of each lower bridge power switch tube is connected to the output end of the low side driving unit through a conductive channel on the fourth chip.

[0030] As a possible implementation, each N-type metal oxide semiconductor transistor shares a concentrated boron substrate and a light boron epitaxial region, the concentrated boron substrate is attached to the fourth region of the second base plate frame by a fourth conductive adhesive, the light boron epitaxial region is arranged on the concentrated boron substrate, and a plurality of concentrated boron current channels are arranged between the concentrated boron substrate and the upper edge of the light boron epitaxial region, and a plurality of light phosphorus drift regions are arranged in the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region;

[0031] The source of each N-type metal oxide semiconductor transistor is arranged on the upper surface of a concentrated boron current channel, the drain of each N-type metal oxide semiconductor transistor is arranged on the upper surface of a light phosphorus drift region, and the gate of each N-type metal oxide semiconductor transistor is arranged between the source and the drain of each N-type metal oxide semiconductor transistor;

[0032] The source of each N-type metal oxide semiconductor transistor is connected to the ground in sequence through the concentrated boron current channel, the concentrated boron substrate and the fourth conductive adhesive.

[0033] As a possible implementation, the drive control unit includes: a protection circuit, a power management unit and a logic control circuit;

[0034] The protection circuit is connected to a first input end of the logic control circuit, a second input end of the logic control circuit is used to connect to the control module, a first output end of the logic control circuit is connected to an input end of the high-side drive unit, a second output end of the logic control circuit is connected to an input end of the low-side drive unit, and a third output end of the logic control circuit is connected to an input end of the power management unit;

[0035] The first output end of the power management unit is connected to the control module, and the second output end of the power management unit is connected to the external power module through a conductive adhesive.

[0036] As a possible implementation manner, the first bottom plate frame and the second bottom plate frame are both metal sheets.

[0037] According to a second aspect of an embodiment of the present application, a motor drive system is provided, which includes: a power supply module, a control module, an H-bridge driver integrated circuit and a driven motor, wherein the power supply module is respectively connected to the H-bridge driver integrated circuit, the input end of the H-bridge driver integrated circuit is connected to the control module, the power supply port of the H-bridge driver integrated circuit is connected to the power supply module, the first output end of the H-bridge driver integrated circuit is connected to the driven motor, and the second output end of the H-bridge driver integrated circuit is connected to the control module.

[0038] The beneficial effects of the embodiments of the present application include:

[0039] An H-bridge driver integrated circuit provided in an embodiment of the present application provides support for a first chip of a high-side driver through a first bottom plate frame, and provides support for an integrated module of a low-side driver through a second bottom plate frame. The first chip includes: a plurality of upper bridge power switch tubes, and the integrated module includes: a drive control unit, a high-side driver unit, a low-side driver unit, and a plurality of lower bridge power switch tubes. The input end of the drive control unit is used to access the control signal output by the control module, and the output end of the drive control unit is respectively connected to the high-side driver single chip and the low-side driver unit. The output end of the high-side driver unit is connected to the control end of each upper bridge power switch tube, and the output end of the low-side driver unit is connected to the control end of each lower bridge power switch tube. The input end of each upper bridge power switch tube is connected to an external power supply module through a first conductive adhesive, and the output end of each lower bridge power switch tube is grounded through a conductive adhesive. The output end of each upper bridge power switch tube is connected to the control end of a driven motor, and the input end of each lower bridge power switch tube is connected to the control end of the driven motor. Among them, the high-voltage driven upper bridge power switch tube is integrated on the first chip and glued on the first bottom plate frame, the upper bridge power switch tube is connected to the power supply current provided by the external power module via the first conductive glue, the low-voltage driven integrated module is glued on the second bottom plate frame, and each lower bridge power switch tube in the integrated module is grounded via the conductive glue, so that the wire bonding between the upper bridge power switch tube and the external power module and the lower bridge power switch tube and the grounding terminal can be reduced to reduce the cost of the integrated circuit, and the device crosstalk between the high-side drive electronic device and the low-side drive electronic device can be reduced. In this way, the packaging difficulty and packaging cost of the H-bridge drive integrated circuit can be reduced, and the reliability and anti-electromagnetic interference performance of the H-bridge drive integrated circuit can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0041] Figure 1 A schematic diagram of a conventional H-bridge driver integrated circuit package;

[0042] Figure 2 A schematic diagram of another conventional H-bridge driver integrated circuit package;

[0043] Figure 3 A schematic diagram of the structure of a first H-bridge driver integrated circuit provided in an embodiment of the present application;

[0044] Figure 4 A schematic diagram of the structure of an upper bridge power switch tube provided in an embodiment of the present application;

[0045] Figure 5 A schematic diagram of the structure of a second H-bridge driver integrated circuit provided in an embodiment of the present application;

[0046] Figure 6 A schematic diagram of the structure of a lower bridge power switch tube provided in an embodiment of the present application;

[0047] Figure 7 A schematic diagram of the structure of a third H-bridge driver integrated circuit provided in an embodiment of the present application.

[0048] Description of the drawings: 101: first baseboard frame; 102: second baseboard frame; 103: first chip; 1031: upper bridge power switch tube; 1041: logic control circuit; 1042: high-side drive unit; 1043: low-side drive unit; 1044: lower bridge power switch tube; 1045: power management unit; 1046: protection circuit; 20: control module; 30: driven motor; 40: power module; 41: second chip; 42: third chip; 43: fourth chip. DETAILED DESCRIPTION

[0049] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0050] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0051] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0052] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the invented product is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0053] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0054] At present, the H-bridge driver module, pre-driver module and power control module of the H-bridge driver integrated circuit are usually integrated via a BCD packaging process or a multi-chip packaging process. However, when the H-bridge driver integrated circuit is packaged based on the BCD process, all the electronic devices in the H-bridge driver integrated circuit will be integrated together. The BCD packaging process needs to consider the compatibility of all the electronic devices in the H-bridge driver integrated circuit. This solution has the problems of complex packaging process, high packaging cost and poor electromagnetic anti-interference performance. In addition, when the H-bridge driver integrated circuit is packaged based on the multi-chip packaging process, the H-bridge driver integrated circuit is integrated into multiple chips, and multiple chips need to be connected via metal wires, which makes it difficult to obtain the comprehensive operating status data of the H-bridge driver integrated circuit. The wire connection between multiple chips will increase the packaging cost and packaging difficulty of the H-bridge driver integrated circuit. Therefore, the solution of the related art has the problems of complex packaging process, high packaging cost, poor electromagnetic anti-interference performance and poor reliability.

[0055] To this end, the embodiment of the present application provides an H-bridge driver integrated circuit, which is divided into two frames by combining the BCD packaging process with the multi-chip packaging process, fixing the low-voltage drive integrated module on the second bottom plate frame via the conductive glue on the second bottom plate frame, and fixing the first chip of the high-voltage drive on the first bottom plate frame via the first conductive glue applied to the first area of ​​the first bottom plate frame. Wherein, the first chip includes a plurality of upper bridge power switch tubes, and the integrated module includes: a drive control unit, a high-side drive unit, a low-side drive unit, and a plurality of lower bridge power switch tubes, the control end of each upper bridge power switch tube is connected to the output end of the high-side drive unit, the control end of each lower bridge power switch tube is connected to the output end of the low-side drive unit, the input end of each upper bridge power switch tube is connected to the external power module via the conductive glue, the output end of each upper bridge power switch tube is connected to the control end of the driven motor, the input end of each lower bridge power switch tube is connected to the output end of the driven motor, and the output end of each lower bridge power switch tube is grounded via the conductive glue applied on the second bottom plate frame. In this way, the packaging difficulty and packaging cost of the H-bridge driver integrated circuit can be reduced, and the reliability and anti-electromagnetic interference performance of the H-bridge driver integrated circuit can be improved.

[0056] H-bridge driver integrated circuits are often used as DC motor control circuits. H-bridge driver integrated circuits are often used to switch the polarity of the voltage applied to the load. When the polarity of the motor as the load is changed, the direction of motor rotation will change.

[0057] For the motor drive system, the motor drive system includes: a control module, a pre-drive module, an H-bridge power drive module, and a power control module. Among them, the control module can be implemented by an MCU or a DSP module, and the control module is mainly used to implement the drive algorithm; the pre-drive module is used to convert the control signal output by the control module into a drive signal of the power switch tube; the H-bridge power drive module is composed of multiple power switch tubes, and the H-bridge power drive module is mainly used to provide a certain current for the motor to drive the motor coil to operate; the power control module is used to adjust the power signal provided by the external power module to power the H-bridge drive integrated circuit. The upper bridge drive circuit of the H-bridge power drive module can be implemented by multiple P-type metal oxide semiconductor transistors or multiple N-type metal oxide semiconductor transistors, but the lower bridge drive circuit of the H-bridge power drive module is generally implemented by multiple N-type metal oxide semiconductor transistors; when the upper bridge drive circuit in the H-bridge power drive module is implemented by multiple N-type metal oxide semiconductor transistors, the upper bridge drive circuit must use a charge pump to provide sufficient gate drive power for the upper bridge N-type metal oxide semiconductor transistor.

[0058] Among them, the P-type metal oxide semiconductor transistor and the N-type metal oxide semiconductor transistor can be integrated on the same chip with the driver IC, or can be externally placed outside the driver IC. The driver IC includes: a pre-driver module, a power control module, and a protection circuit.

[0059] Taking the three-phase H-bridge driver as an example, there are two main packaging methods for the H-bridge driver integrated circuit in the three-phase H-bridge driver:

[0060] Figure 1 A schematic diagram of a conventional H-bridge driver integrated circuit package is shown in FIG. Figure 1 , the P-type metal oxide semiconductor transistor, N-type metal oxide semiconductor transistor, power management module and driver IC are integrated on the same chip using the BCD process. The chip integrated and packaged by the BCD process needs to be compatible with the packaging characteristics and packaging process of the P-type metal oxide semiconductor transistor, N-type metal oxide semiconductor transistor and driver IC, which will lead to a complex packaging process and high packaging cost for the H-bridge driver integrated circuit. In addition, when the P-type metal oxide semiconductor transistor, N-type metal oxide semiconductor transistor and driver IC are packaged on the same chip, when the P-type metal oxide semiconductor transistor and N-type metal oxide semiconductor transistor work at a large current, it will cause device crosstalk problems, which will lead to a decrease in the reliability of the H-bridge driver integrated circuit.

[0061] Figure 2 Another conventional H-bridge driver integrated circuit packaging schematic diagram is shown in FIG. Figure 2 , using multi-chip packaging technology to integrate each P-type metal oxide semiconductor transistor into one chip, and each N-type metal oxide semiconductor transistor into one chip, and the power management module and the driver IC are integrated on the same chip. In this way, the H-bridge driver integrated circuit will be divided into 7 chips, and each chip is connected by bonding and wire bonding, which will result in more wire bonding for the H-bridge driver integrated circuit and high packaging cost. At the same time, it will also make it difficult to collect operating status data such as temperature and current of the H-bridge driver integrated circuit, reducing the reliability of the H-bridge driver integrated circuit.

[0062] The H-bridge driver integrated circuit and the motor driver system provided in the embodiments of the present application are explained in detail below with reference to the accompanying drawings.

[0063] Figure 3 This is a schematic diagram of the structure of the first H-bridge driver integrated circuit provided in this application, see Figure 3 The H-bridge driver integrated circuit provided in the embodiment of the present application includes: a first baseboard frame 101, a second baseboard frame 102, a first chip 103 and an integrated module.

[0064] A first conductive adhesive is pasted on the first area of ​​the first base frame 101 , and the first chip 103 is pasted on the first area through the first conductive adhesive. A conductive adhesive is pasted on the second base frame 102 , and the integrated module is pasted on the second base frame 102 through the conductive adhesive.

[0065] Optionally, the first area is used to indicate an area where the first chip 103 is fixed on the first base frame 101. The first area may be any area on the first base frame 101, and the user may select it randomly, which is not specifically limited in the present application.

[0066] Optionally, the first conductive adhesive refers to a conductive adhesive that bonds the first chip 103 to the first base frame 101. The first base frame 101 is mainly used to provide support for the first chip 103. The user pre-selects a first area on the first base frame 101 and applies the first conductive adhesive on the first area. The first conductive adhesive is used to bond the first chip 103 to the first base frame 101.

[0067] Optionally, the user may apply conductive glue to any area on the second base frame 102 in advance, and the integrated module is bonded to the second base frame through the conductive glue.

[0068] The first chip 103 includes a plurality of upper bridge power switch tubes 1031 , and the integrated module includes: a driving control unit, a high-side driving unit 1042 , a low-side driving unit 1043 and a plurality of lower bridge power switch tubes 1044 .

[0069] Optionally, the first chip 103 includes multiple upper bridge power switch tubes 1031 , that is, the multiple upper bridge power switch tubes 1031 in the first chip 103 are integrated in the same chip, and the operation of the driven motor 30 is controlled by the integrated upper bridge power switch tubes 1031 .

[0070] Optionally, the integrated module includes: a driving control unit, a high-side driving unit 1042, a low-side driving unit 1043, and a plurality of lower-bridge power switch tubes 1044. The input end of the driving control unit is used to access the control signal input by the external control module 20. The driving control unit converts the control signal provided by the control unit into a corresponding power switch tube driving signal, and applies the corresponding high-side driving signal to the control end of the upper-bridge power switch tube 1031 via the high-side driving unit 1042, and applies the corresponding low-side driving signal to the control end of the lower-bridge power switch tube 1044 via the low-side driving unit 1043. Among them, the high-side driving unit 1042 and the low-side driving unit 1043 can constitute a pre-driving unit for driving the upper and lower bridges in the H-bridge driving integrated circuit.

[0071] The control end of each upper bridge power switch tube 1031 is connected to the output end of the high side driving unit 1042, the input end of each upper bridge power switch tube 1031 is connected to the external power module 40 through the first conductive glue, and the output end of each upper bridge power switch tube 1031 is connected to the control end of the driven motor 30.

[0072] Optionally, the control end of each upper bridge power switch tube 1031 is used to access the high-side drive signal output by the high-side drive unit 1042, and the input end of the upper bridge power switch tube 1031 is shared via the first conductive glue, and the current provided by the external power supply module 40 is connected through the first conductive glue. Under the control of the high-side drive unit 1042, the upper bridge power switch tube 1031 adjusts the operating state of the driven motor 30 based on the power supply signal provided by the external power supply module 40, so that the driven motor 30 outputs corresponding electric energy.

[0073] It is worth noting that the input end of each upper bridge power switch tube 1031 is connected to the power supply current provided by the external power module 40 via the first conductive adhesive. In this way, the wiring between the input end of the upper bridge power switch tube 1031 and the external power module 40 can be reduced, thereby reducing the circuit integration cost of the upper bridge power switch tube 1031.

[0074] The control end of each lower bridge power switch tube 1044 is connected to the output end of the low side driving unit 1043, the input end of each lower bridge power switch tube 1044 is connected to the control end of the driven motor 30, and the output end of each lower bridge power switch tube 1044 is grounded through the conductive glue pasted on the second bottom plate frame 102.

[0075] Optionally, each lower-bridge power switch tube 1044 is turned on or off under the action of the low-side driving signal output by the low-side driving unit 1043, and the output end of the lower-bridge power switch tube 1044 is commonly grounded via conductive glue, which can reduce the wiring between the output end and the ground end of the lower-bridge power switch tube 1044, thereby reducing the cost of circuit integration of the lower-bridge power switch tube 1044.

[0076] In addition, the input end of the lower bridge power switch tube 1044 is connected to the control end of the driven motor 30, but the lower bridge power switch tube 1044 is not used to control the operating state of the driven motor 30. The lower bridge power switch tube 1044 is used to achieve grounding of the driven motor 30, so that the H-bridge driver integrated circuit constitutes a complete circuit loop.

[0077] It is worth noting that the control end of the driven motor 30 can not only be used as a control end for receiving a control signal from the upper bridge power switch tube, but also can be used as an electric energy output end of the driven motor 30.

[0078] An input end of the high-side driving unit 1042 and an input end of the low-side driving unit 1043 are connected to the driving control unit.

[0079] Optionally, the drive control unit is used to access the control signal input by the external control module 20, and convert the received control signal into a corresponding power switch tube drive signal, and apply it to the corresponding power switch tube via the high-side drive unit 1042 and the low-side drive unit 1043.

[0080] Optionally, the driving control unit, the high-side driving unit 1042 , the low-side driving unit 1043 and the multiple lower-bridge power switch tubes 1044 in the integrated module are all low-voltage electronic devices, and each upper-bridge power switch tube 1031 in the first chip 103 is driven by the high-side driving unit 1042 .

[0081] In an embodiment of the present application, a first base plate frame is used to provide support for a first chip of a high-side drive, and a second base plate frame is used to provide support for an integrated module of a low-side drive. The first chip includes: a plurality of upper-bridge power switch tubes, and the integrated module includes: a drive control unit, a high-side drive unit, a low-side drive unit, and a plurality of lower-bridge power switch tubes. The input end of the drive control unit is used to access a control signal output by the control module, and the output end of the drive control unit is respectively connected to the high-side drive unit and the low-side drive unit. The output end of the high-side drive unit is connected to the control end of each upper-bridge power switch tube, and the output end of the low-side drive unit is connected to the control end of each lower-bridge power switch tube. The input end of each upper-bridge power switch tube is connected to an external power supply module through a first conductive adhesive, and the output end of each lower-bridge power switch tube is grounded through a conductive adhesive. The output end of each upper-bridge power switch tube is connected to the control end of a driven motor, and the input end of each lower-bridge power switch tube is connected to the control end of a driven motor. Among them, the high-voltage driven upper bridge power switch tube is integrated on the first chip and glued on the first bottom plate frame, the upper bridge power switch tube is connected to the power supply current provided by the external power module via the first conductive glue, the low-voltage driven integrated module is glued on the second bottom plate frame, and each lower bridge power switch tube in the integrated module is grounded via the conductive glue, so that the wire bonding between the upper bridge power switch tube and the external power module and the lower bridge power switch tube and the grounding terminal can be reduced to reduce the cost of the integrated circuit, and the device crosstalk between the high-side drive electronic device and the low-side drive electronic device can be reduced. In this way, the packaging difficulty and packaging cost of the H-bridge drive integrated circuit can be reduced, and the reliability and anti-electromagnetic interference performance of the H-bridge drive integrated circuit can be improved.

[0082] In an optional embodiment, see Figure 4 In the H-bridge driver integrated circuit provided in the embodiment of the present application, each upper bridge power switch tube 1031 in the first chip 103 is a P-type metal oxide semiconductor transistor.

[0083] Optionally, the number of upper bridge power switch tubes 1031 in the first chip 103 can be 1, 2, 3, etc. The number of upper bridge power switch tubes 1031 in the first chip 103 is equal to the number of lower bridge power switch tubes 1044 in the integrated module. When the number of upper bridge power switch tubes 1031 in the first chip 103 is 1, the H-bridge driver integrated circuit is a single-phase H-bridge driver integrated circuit; when the number of upper bridge power switch tubes 1031 in the first chip 103 is 2, the H-bridge driver integrated circuit is a dual-phase H-bridge driver integrated circuit; when the number of upper bridge power switch tubes 1031 in the first chip 103 is 3, the H-bridge driver integrated circuit is a three-phase H-bridge driver integrated circuit. This application takes the H-bridge driver integrated circuit as a three-phase H-bridge driver integrated circuit as an example, but it does not mean that the integrated circuit structure of this application is only applicable to three-phase H-bridge driver integrated circuits, and this application does not make specific limitations on this.

[0084] Each P-type metal oxide semiconductor transistor shares a concentrated N-type substrate and a light N-type epitaxial region. The concentrated N-type substrate is adhered to the first area of ​​the first base plate frame 101 by a first conductive adhesive. The light N-type epitaxial region is arranged on the concentrated N-type substrate, and a plurality of concentrated N-type current channels are arranged between the concentrated N-type substrate and the upper edge of the light N-type epitaxial region. A plurality of light boron drift regions are arranged in the light N-type epitaxial region, and the upper surface of each concentrated N-type current channel is aligned with the upper edge of the light N-type epitaxial region.

[0085] Optionally, a concentrated N-type substrate is used as the substrate of the first chip 103, and a light N-type epitaxial region is grown on the concentrated N-type substrate. The current provided by the external power module 40 flows into the concentrated N-type substrate via the first conductive glue, and then flows into the concentrated N-type current channel via the concentrated N-type substrate, and then flows into the source of the P-type metal oxide semiconductor transistor.

[0086] Optionally, each P-type metal oxide semiconductor transistor in the first chip 103 shares a strong N-type substrate and a weak N-type epitaxial region, and each P-type metal oxide semiconductor transistor is provided with a corresponding strong N-type current channel so that the current provided by the external power supply module 40 is transmitted to the control end of the driven motor 30.

[0087] The source of each P-type metal oxide semiconductor transistor is arranged on the upper surface of a concentrated N-type current channel, the drain of each P-type metal oxide semiconductor transistor is arranged on the upper surface of a light boron drift region, and the gate of each P-type metal oxide semiconductor transistor is arranged between the source and the drain of each P-type metal oxide semiconductor transistor;

[0088] The source of each P-type metal oxide semiconductor transistor is connected to the external power module 40 in sequence through the concentrated N-type current channel, the concentrated N-type substrate and the first conductive glue.

[0089] Optionally, each P-type metal oxide semiconductor transistor is integrated on the same chip, and each P-type metal oxide semiconductor transistor realizes a common source through a concentrated N-type substrate and a concentrated N-type current channel. The power supply current provided by the external power supply module 40 can directly flow into the common concentrated N-type substrate through the first conductive glue, and be transmitted to the drain of each P-type metal oxide semiconductor transistor through the concentrated N-type current channel corresponding to each P-type metal oxide semiconductor transistor, and then transmitted to the control end of the driven motor 30.

[0090] Optionally, the gate of each P-type metal oxide semiconductor transistor is respectively connected to the output end of the high-side driving unit 1042, the source of each P-type metal oxide semiconductor transistor is connected to the external power supply module 40 via the first conductive glue, and the drain of each P-type metal oxide semiconductor transistor is connected to the output end of the driven motor 30.

[0091] In an optional implementation, each upper bridge power switch tube 1031 is an N-type metal oxide semiconductor transistor.

[0092] The drain of each N-type metal oxide semiconductor transistor is connected to the external power module 40 through the first conductive adhesive, and the source of each N-type metal oxide semiconductor transistor is connected to the control end of the driven motor 30 .

[0093] Optionally, the gate of each N-type metal oxide semiconductor transistor is respectively connected to the output end of the high-side driving unit 1042, the drain of each N-type metal oxide semiconductor transistor is respectively connected to the external power supply module 40, and the source of each N-type metal oxide semiconductor transistor is connected to the output end of the driven motor 30.

[0094] In an optional embodiment, see Figure 5 The integrated module in the H-bridge driver integrated circuit provided in the embodiment of the present application includes: a second chip 41 and a third chip 42, the second area of ​​the second base frame 102 is pasted with a second conductive adhesive, and the third area of ​​the second base frame 102 is pasted with a third conductive adhesive.

[0095] Optionally, the second area is used to indicate the area where the second chip 41 is fixed on the second baseboard frame 102, and the second area can be any area on the second baseboard frame 102; the third area is used to indicate the area where the third chip 42 is fixed on the second baseboard frame 102, and the third area can be any area on the second baseboard frame 102; the user can randomly select the second area and the third area on the second baseboard frame 102, and this application does not make any specific limitations on this.

[0096] Optionally, the second conductive adhesive refers to the conductive adhesive for bonding the second chip 41 to the second baseboard frame 102, and the third conductive adhesive refers to the conductive adhesive for bonding the third chip 42 to the second baseboard frame 102. The second baseboard frame 102 is mainly used to provide support for the second chip 41 and the third chip 42. The user pre-selects the second area and the third area on the second baseboard frame 102, and applies the second conductive adhesive on the second area and the third conductive adhesive on the third area. The second chip 41 is bonded to the second baseboard frame 102 by the second conductive adhesive, and the third chip 42 is bonded to the second baseboard frame 102 by the third conductive adhesive.

[0097] The second chip 41 is attached to the second region by a second conductive adhesive, and the third chip 42 is attached to the third region by a conductive adhesive;

[0098] The driving control unit, the high-side driving unit 1042 and the low-side driving unit 1043 are integrated on the second chip 41, and the plurality of lower bridge power switch tubes 1044 are integrated on the third chip 42;

[0099] The gate of each lower bridge power switch tube 1044 is connected to the output end of the low side driving unit 1043 through a metal wire.

[0100] In an optional embodiment, see Figure 6 In the H-bridge driver integrated circuit provided in the embodiment of the present application, each upper bridge power switch tube 1031 is an N-type metal oxide semiconductor transistor.

[0101] The N-type metal oxide semiconductor transistor shares a concentrated boron substrate and a light boron epitaxial region, and the concentrated boron substrate is adhered to the third region of the second base plate frame 102 by a third conductive adhesive; the light boron epitaxial region is arranged on the concentrated boron substrate, and a plurality of concentrated boron current channels are arranged between the concentrated boron substrate and the upper edge of the light boron epitaxial region, and a plurality of light phosphorus drift regions are arranged in the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region.

[0102] Optionally, a concentrated boron substrate is used as the substrate of the third chip 42, and a light boron epitaxial region is grown on the concentrated boron substrate. The current output by the driven motor 30 flows into the concentrated boron current channel through the source of the N-type metal oxide semiconductor transistor, and then flows into the concentrated boron substrate through the concentrated boron current channel, and then is grounded through the third conductive adhesive.

[0103] The source of each N-type metal oxide semiconductor transistor is arranged on the upper surface of a concentrated boron current channel, the drain of each N-type metal oxide semiconductor transistor is arranged on the upper surface of a light phosphorus drift region, and the gate of each N-type metal oxide semiconductor transistor is arranged between the source and the drain of each N-type metal oxide semiconductor transistor;

[0104] The source of each N-type metal oxide semiconductor transistor is connected to the ground in sequence through the concentrated boron current channel, the concentrated boron substrate and the third conductive adhesive.

[0105] Optionally, the gate of each N-type metal oxide semiconductor transistor is respectively connected to the output end of the low-side driving unit 1043, the source of each N-type metal oxide semiconductor transistor is respectively connected to the control end of the driven motor 30, and the drain of each N-type metal oxide semiconductor transistor is grounded via a third conductive adhesive.

[0106] In an optional embodiment, see Figure 7 The integrated module in the H-bridge driver integrated circuit provided in the embodiment of the present application includes: a fourth chip; and a fourth conductive adhesive is pasted on the fourth area of ​​the second base plate frame 102 .

[0107] The driving control unit, the high-side driving unit 1042 , the low-side driving unit 1043 and the plurality of lower bridge power switch tubes 1044 are integrated on the fourth chip 43 , and the fourth chip 43 is attached to the fourth area of ​​the second base frame 102 by a fourth conductive adhesive.

[0108] Optionally, the fourth area is used to indicate an area where the fourth chip 43 is fixed on the second base frame 102 . The fourth area may be any area on the second base frame 102 , and the user may select it randomly. This application does not make any specific limitation on this.

[0109] Optionally, the fourth conductive adhesive refers to a conductive adhesive that bonds the fourth chip 43 to the second base frame 102. The second base frame 102 is mainly used to provide support for the fourth chip 43. The user pre-selects a fourth area on the second base frame 102 and applies the fourth conductive adhesive on the fourth area. The fourth conductive adhesive is used to bond the fourth chip 43 to the second base frame 102.

[0110] Optionally, the user may apply the fourth conductive adhesive to any area on the second base frame 102 in advance, and the fourth chip 43 is bonded to the second base frame 102 through the fourth conductive adhesive.

[0111] The gate of each lower bridge power switch tube 1044 is connected to the output end of the low side driving unit 1043 through a conductive channel on the fourth chip 43 .

[0112] In an optional embodiment, see Figure 6, each N-type metal oxide semiconductor transistor in the H-bridge driver integrated circuit provided in the embodiment of the present application shares a concentrated boron substrate and a light boron epitaxial region, the concentrated boron substrate is adhered to the fourth region of the second base plate frame 102 by a fourth conductive adhesive, the light boron epitaxial region is arranged on the concentrated boron substrate, and a plurality of concentrated boron current channels are arranged between the concentrated boron substrate and the upper edge of the light boron epitaxial region, and a plurality of light phosphorus drift regions are arranged in the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region.

[0113] The source of each N-type metal oxide semiconductor transistor is arranged on the upper surface of a concentrated boron current channel, the drain of each N-type metal oxide semiconductor transistor is arranged on the upper surface of a light phosphorus drift region, and the gate of each N-type metal oxide semiconductor transistor is arranged between the source and the drain of each N-type metal oxide semiconductor transistor;

[0114] The source of each N-type metal oxide semiconductor transistor is connected to the ground in sequence through the concentrated boron current channel, the concentrated boron substrate and the fourth conductive adhesive.

[0115] In an optional embodiment, see Figure 7 The driving control unit in the integrated module of the H-bridge driving integrated circuit provided in the embodiment of the present application includes: a protection circuit 1046, a power management unit 1045 and a logic control circuit 1041.

[0116] The protection circuit 1046 is connected to a first input terminal of the logic control circuit 1041, a second input terminal of the logic control circuit 1041 is used to connect to the control module 20, a first output terminal of the logic control circuit 1041 is connected to an input terminal of the high-side driving unit 1042, a second output terminal of the logic control circuit 1041 is connected to an input terminal of the low-side driving unit 1043, and a third output terminal of the logic control circuit 1041 is connected to an input terminal of the power management unit 1045;

[0117] A first output terminal of the power management unit 1045 is connected to the control module 20 , and a second output terminal of the power management unit 1045 is connected to the external power module 40 through a conductive adhesive.

[0118] In an optional implementation, the first baseboard frame 101 and the second baseboard frame 102 in the H-bridge driver integrated circuit provided in the embodiment of the present application are both metal sheets, and the metal sheets may be copper sheets, which is not specifically limited in the present application.

[0119] In an optional embodiment, an embodiment of the present application provides a motor drive system, which includes: a power supply module 40, a control module 20, an H-bridge driver integrated circuit and a driven motor 30, the power supply module 40 is respectively connected to the H-bridge driver integrated circuit, the input end of the H-bridge driver integrated circuit is connected to the control module 20, the power supply port of the H-bridge driver integrated circuit is connected to the power supply module 40, the first output end of the H-bridge driver integrated circuit is connected to the driven motor 30, and the second output end of the H-bridge driver integrated circuit is connected to the control module 20.

[0120] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0121] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An H-bridge driver integrated circuit, characterized in that: include: A first base frame, a second base frame, a first chip and an integrated module; A first conductive adhesive is pasted on the first area of ​​the first base frame, and the first chip is pasted on the first area through the first conductive adhesive; a conductive adhesive is pasted on the second base frame, and the integrated module is pasted on the second base frame through the conductive adhesive; The first chip includes a plurality of upper bridge power switch tubes, and the integrated module includes: a drive control unit, a high-side drive unit, a low-side drive unit, and a plurality of lower bridge power switch tubes; The control end of each upper bridge power switch tube is connected to the output end of the high side drive unit, the input end of each upper bridge power switch tube is connected to the external power supply module through the first conductive adhesive, and the output end of each upper bridge power switch tube is connected to the control end of the driven motor; The control end of each lower bridge power switch tube is connected to the output end of the low side drive unit, the input end of each lower bridge power switch tube is connected to the control end of the driven motor, and the output end of each lower bridge power switch tube is grounded through the conductive glue pasted on the second bottom plate frame; An input end of the high-side driving unit and an input end of the low-side driving unit are connected to the driving control unit.

2. The H-bridge driver integrated circuit according to claim 1, characterized in that: Each of the upper bridge power switch tubes is a P-type metal oxide semiconductor transistor; Each P-type metal oxide semiconductor transistor shares a concentrated N-type substrate and a light N-type epitaxial region, the concentrated N-type substrate is adhered to the first region of the first bottom plate frame by the first conductive adhesive, the light N-type epitaxial region is arranged on the concentrated N-type substrate, and a plurality of concentrated N-type current channels are arranged between the concentrated N-type substrate and the upper edge of the light N-type epitaxial region, and a plurality of light boron drift regions are arranged in the light N-type epitaxial region, and the upper surface of each concentrated N-type current channel is aligned with the upper edge of the light N-type epitaxial region; The source of each P-type metal oxide semiconductor transistor is arranged on the upper surface of one of the concentrated N-type current channels, the drain of each P-type metal oxide semiconductor transistor is arranged on the upper surface of one of the light boron drift regions, and the gate of each P-type metal oxide semiconductor transistor is arranged between the source and the drain of each P-type metal oxide semiconductor transistor; The source of each P-type metal oxide semiconductor transistor is connected to an external power module in sequence through the concentrated N-type current channel, the concentrated N-type substrate and the first conductive glue.

3. The H-bridge driver integrated circuit according to claim 1, characterized in that: Each of the upper bridge power switch tubes is an N-type metal oxide semiconductor transistor; The drain of each N-type metal oxide semiconductor transistor is connected to the external power module through the first conductive adhesive, and the source of each N-type metal oxide semiconductor transistor is connected to the control end of the driven motor.

4. The H-bridge driver integrated circuit according to claim 1, characterized in that: The integrated module comprises: a second chip and a third chip; a second conductive adhesive is pasted on the second area of ​​the second bottom plate frame, and a third conductive adhesive is pasted on the third area of ​​the second bottom plate frame; The second chip is attached to the second region via the second conductive adhesive, and the third chip is attached to the third region via the conductive adhesive; The driving control unit, the high-side driving unit and the low-side driving unit are integrated on the second chip, and the plurality of lower bridge power switch tubes are integrated on the third chip; The gate of each lower bridge power switch tube is connected to the output end of the low side drive unit through a metal wire.

5. The H-bridge driver integrated circuit according to claim 4, characterized in that: Each of the lower bridge power switch tubes is an N-type metal oxide semiconductor transistor; Each N-type metal oxide semiconductor transistor shares a concentrated boron substrate and a light boron epitaxial region, and the concentrated boron substrate is adhered to the third region of the second base plate frame by the third conductive adhesive; the light boron epitaxial region is arranged on the concentrated boron substrate, and a plurality of concentrated boron current channels are arranged between the concentrated boron substrate and the upper edge of the light boron epitaxial region, and a plurality of light phosphorus drift regions are arranged in the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region; The source of each N-type metal oxide semiconductor transistor is arranged on the upper surface of one of the concentrated boron current channels, the drain of each N-type metal oxide semiconductor transistor is arranged on the upper surface of one of the light phosphorus drift regions, and the gate of each N-type metal oxide semiconductor transistor is arranged between the source and the drain of each N-type metal oxide semiconductor transistor; The source of each N-type metal oxide semiconductor transistor is connected to the ground in sequence through the concentrated boron current channel, the concentrated boron substrate and the third conductive adhesive.

6. The H-bridge driver integrated circuit according to claim 1, characterized in that: The integrated module comprises: a fourth chip; a fourth conductive adhesive is pasted on a fourth area of ​​the second bottom plate frame; The driving control unit, the high-side driving unit, the low-side driving unit and the plurality of lower bridge power switch tubes are integrated on the fourth chip, and the fourth chip is attached to the fourth area of ​​the second bottom plate frame by the fourth conductive adhesive; The gate of each lower bridge power switch tube is connected to the output end of the low side driving unit through a conductive channel on the fourth chip.

7. The H-bridge driver integrated circuit according to claim 6, characterized in that: Each N-type metal oxide semiconductor transistor shares a concentrated boron substrate and a light boron epitaxial region, the concentrated boron substrate is adhered to the fourth region of the second base plate frame by the fourth conductive adhesive, the light boron epitaxial region is arranged on the concentrated boron substrate, and a plurality of concentrated boron current channels are arranged between the concentrated boron substrate and the upper edge of the light boron epitaxial region, and a plurality of light phosphorus drift regions are arranged in the light boron epitaxial region, and the upper surface of each concentrated boron current channel is aligned with the upper edge of the light boron epitaxial region; The source of each N-type metal oxide semiconductor transistor is arranged on the upper surface of one of the concentrated boron current channels, the drain of each N-type metal oxide semiconductor transistor is arranged on the upper surface of one of the light phosphorus drift regions, and the gate of each N-type metal oxide semiconductor transistor is arranged between the source and the drain of each N-type metal oxide semiconductor transistor; The source of each N-type metal oxide semiconductor transistor is connected to the ground in sequence through the concentrated boron current channel, the concentrated boron substrate and the fourth conductive adhesive.

8. The H-bridge driver integrated circuit according to any one of claims 1 to 7, characterized in that: The drive control unit includes: a protection circuit, a power management unit and a logic control circuit; The protection circuit is connected to a first input end of the logic control circuit, a second input end of the logic control circuit is used to connect a control module, a first output end of the logic control circuit is connected to an input end of the high-side drive unit, a second output end of the logic control circuit is connected to an input end of the low-side drive unit, and a third output end of the logic control circuit is connected to an input end of the power management unit; The first output end of the power management unit is connected to the control module, and the second output end of the power management unit is connected to the external power module through the conductive adhesive.

9. The H-bridge driver integrated circuit according to any one of claims 1 to 7, characterized in that: The first bottom plate frame and the second bottom plate frame are both metal sheets.

10. A motor drive system, characterized in that: The motor drive system includes: a power supply module, a control module, an H-bridge driver integrated circuit and a driven motor, the power supply module is respectively connected to the H-bridge driver integrated circuit, the input end of the H-bridge driver integrated circuit is connected to the control module, the power supply port of the H-bridge driver integrated circuit is connected to the power supply module, the first output end of the H-bridge driver integrated circuit is connected to the driven motor, and the second output end of the H-bridge driver integrated circuit is connected to the control module.

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