Plasma variable capacitance type boosting device

Abstract

The invention discloses a plasma variable capacitance type boosting device, and relates to the technical field of electrical elements. The invention aims to solve the problems that the conventional coil mutual inductance type boosting structure needs a large amount of copper materials, a high-quality mutual inductance magnetic core and a relatively complicated driving circuit, and meanwhile, a large amount of electromagnetic radiation exists and the conversion efficiency is low. The capacitor comprises a first conductive electrode, a second conductive electrode, a first dielectric medium, a second dielectric medium and gas, the capacitor formed by connecting the first dielectric medium, the gas and the second dielectric medium in series is integrally formed, and the first conductive electrode and the second conductive electrode are two electrodes of the capacitor. The series capacitance value can reach the uF level or higher during gas glow discharge, the series capacitance value is smaller than the capacitance value of gas in the gas insulation state, large-proportion change of the capacitance value is achieved, the large-amplitude boosting effect is further achieved, and the high-voltage boosting device has the advantages of saving copper materials, being light in weight, simple in structure, low in cost, energy-saving and environment-friendly.

Description

Technical Field

[0001] The present invention relates to the technical field of electrical components. Background Art

[0002] Existing voltage boosting devices are mainly coil mutual inductance boosting structures, which require a large amount of copper material, high-quality mutual inductance cores, and a relatively complex drive circuit. At the same time, there is a large amount of electromagnetic radiation and low conversion efficiency. Summary of the invention

[0003] The purpose of the present invention is to provide a plasma variable capacitance boost device. The present invention is to overcome the problems that the existing coil mutual inductance boost structure requires a large amount of copper material, a high-quality mutual inductance core, and a relatively complex driving circuit, and there is a large amount of electromagnetic radiation and low conversion efficiency.

[0004] A plasma variable capacitance boosting device of the present invention comprises a first conductive electrode 1, a second conductive electrode 2, a first dielectric 3, a second dielectric 4, and a gas 5;

[0005] The right end face of the first conductive electrode 1 is tightly connected to the left end face of the first dielectric 3, the left end face of the second conductive electrode 2 is tightly connected to the right end face of the second dielectric 4, a gap 5-1 is provided between the right end face of the first dielectric 3 and the left end face of the second dielectric 4, a gas 5 is provided in the gap 5-1, the gas 5 is an inert gas, and a capacitor consisting of the first dielectric 3, the gas 5, and the second dielectric 4 connected in series is formed as a whole, and the first conductive electrode 1 and the second conductive electrode 2 are two electrodes of this capacitor.

[0006] The positive terminal of the output end of the DC power supply 6 is connected to the positive electrode of the diode D1, the negative electrode of the diode D1 is connected to the first conductive electrode 1 and the positive electrode of the diode D2, the negative terminal of the output end of the DC power supply 6 is connected to the second conductive electrode 2, the negative electrode of the diode D2 and the second conductive electrode 2 are high-voltage output terminals, the output voltage of the DC power supply 6 is greater than the voltage of the ionized glow discharge breakdown of the gas 5 in the gap 5-1, and can break through the glow discharge of the gas 5 in the gap 5-1 when the DC power supply 6 charges the first conductive electrode 1 and the second conductive electrode 2 through the diode D1 at the initial stage, and the first dielectric 3 and the second dielectric 4 are both made of dielectrics with high dielectric constants.

[0007] A plasma variable capacitance boosting device of the present invention can use a dielectric with a high dielectric constant, such as barium titanate. When the gas 5 is glow discharged, its series capacitance value can be very large, reaching the uF level or larger. When the gas 5 is in an insulating state, its series capacitance value is smaller than the capacitance value of the gas 5, thereby achieving a large-proportional change in the capacitance value, and thus achieving a large-scale boosting effect. It has the advantages of saving copper materials, light weight, simple structure, low cost, and energy saving and environmental protection. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0009] Figure 2 It is a structural schematic diagram of the external power supply circuit of the present invention. DETAILED DESCRIPTION

[0010] Specific implementation method 1: Combination Figure 1 , Figure 2 To illustrate this embodiment, this embodiment comprises a first conductive electrode 1, a second conductive electrode 2, a first dielectric 3, a second dielectric 4, and a gas 5;

[0011] The right end face of the first conductive electrode 1 is tightly connected to the left end face of the first dielectric 3, the left end face of the second conductive electrode 2 is tightly connected to the right end face of the second dielectric 4, a gap 5-1 is provided between the right end face of the first dielectric 3 and the left end face of the second dielectric 4, a gas 5 is provided in the gap 5-1, the gas 5 is an inert gas, and a capacitor consisting of the first dielectric 3, the gas 5, and the second dielectric 4 connected in series is formed as a whole, and the first conductive electrode 1 and the second conductive electrode 2 are two electrodes of this capacitor.

[0012] The positive terminal of the output end of the DC power supply 6 is connected to the positive electrode of the diode D1, the negative electrode of the diode D1 is connected to the first conductive electrode 1 and the positive electrode of the diode D2, the negative terminal of the output end of the DC power supply 6 is connected to the second conductive electrode 2, the negative electrode of the diode D2 and the second conductive electrode 2 are high-voltage output terminals, the output voltage of the DC power supply 6 is greater than the voltage of the ionized glow discharge breakdown of the gas 5 in the gap 5-1, and can break through the glow discharge of the gas 5 in the gap 5-1 when the DC power supply 6 charges the first conductive electrode 1 and the second conductive electrode 2 through the diode D1 at the initial stage, and the first dielectric 3 and the second dielectric 4 are both made of dielectrics with high dielectric constants.

[0013] Working principle: Before charging, the capacitance of the capacitor connected in series by the first dielectric 3, the gas 5, and the second dielectric 4 is the smallest, because the dielectric constant of the gas 5 is 1. When the materials of the first dielectric 3 and the second dielectric 4 are both barium titanate, the dielectric constant of barium titanate is about 3000, so the series capacitance value is smaller than the capacitance value of the gas 5, because its dielectric capacitance value is much larger than the capacitance value of the gas 5. When the DC power supply 6 charges the first conductive electrode 1 and the second conductive electrode 2 through the diode D1, according to the capacitance voltage division principle, the voltage drop on the dielectric layer is very small, and Most of the voltage will fall on the gas 5, making its voltage greater than the voltage of the gas 5 breakdown glow discharge (the output voltage of the DC power supply 6 is set, the spacing of the gap 5-1 is adjusted, and the pressure of the gas 5 is adjusted, so that the voltage of the gas 5 breakdown glow discharge is less than its partial pressure voltage). When the gas 5 breaks down into a plasma glow discharge, the gap 5-1 is approximately electrically short-circuited - the capacitance value is approximately infinite, that is, the first dielectric 3 and the second dielectric 4 are directly and approximately electrically short-circuited, so that the overall series capacitance value increases rapidly, approaching the capacitance value of the first dielectric 3 and the second dielectric 4 directly connected in series, and the glow discharge of the gas 5 enters the stage of maintaining the glow discharge. The light discharge state continues to be charged. When the capacitor connected in series by the first dielectric 3 and the second dielectric 4 is charged to the output voltage value of the DC power supply 6, it is in the full state and will no longer be charged. No current flows, causing the partial pressure voltage value of the gas 5 to be lower than the maintenance voltage value of the glow discharge, and the glow discharge of the gas 5 cannot be maintained and is extinguished. At this time, the gas 5 returns to the gas insulation state, so that the capacitance value of the capacitor connected in series by the first dielectric 3, the gas 5, and the second dielectric 4 is restored to the minimum value. According to the charge conservation principle of the capacitor, the charge remains unchanged, the capacitance value decreases, and its voltage increases. At this time, the voltage between the first conductive electrode 1 and the second conductive electrode 2 The voltage between the first conductive electrode 1 and the second conductive electrode 2 rises rapidly, and is much greater than the output voltage value of the DC power supply 6 to achieve voltage boost. Due to the presence of the diode D1, it cannot discharge reversely to the DC power supply 6, and can only discharge outward through the diode D2 to do work. Therefore, the series capacitance value is very small at this time, so that most of the charge is transferred out through the diode D2, so that the voltage between the first conductive electrode 1 and the second conductive electrode 2 drops rapidly. When it drops back to a voltage lower than the output voltage of the DC power supply 6, the DC power supply 6 will charge the first conductive electrode 1 and the second conductive electrode 2 again through the diode D1, and then break down the gas 5 to glow discharge, thereby achieving a reciprocating cycle of outputting high voltage to the outside. The entire device can be set in an insulated sealed container.

[0014] Specific implementation method 2: Combination Figure 1 , Figure 2 This embodiment is described. The difference between this embodiment and the first embodiment is that the material of the first dielectric 3 and the second dielectric 4 is a dielectric with a high dielectric constant. The other components and connection relationships are the same as those of the first embodiment. The purpose of this embodiment is to increase its series capacitance value.

[0015] Specific implementation method three: Combination Figure 1 , Figure 2 The present embodiment is described in detail. The difference between the present embodiment and the first or second embodiment is that the material of the first dielectric 3 and the second dielectric 4 is barium titanate. The other components and connection relationships are the same as those of the first embodiment. The purpose of the present embodiment is to increase its series capacitance value.

[0016] Specific implementation method four: Combination Figure 1 , Figure 2 This embodiment is described. The difference between this embodiment and the first or second embodiment is that the material of the first dielectric 3 and the second dielectric 4 is copper calcium titanate. The other components and connection relationships are the same as those of the first embodiment. The purpose of this embodiment is to increase its series capacitance value.

[0017] Specific implementation method five: Combination Figure 1 , Figure 2 This embodiment is described. The difference between this embodiment and the first embodiment is that the gas 5 is neon, argon, xenon, krypton or nitrogen. The other components and connection relationships are the same as those of the first embodiment.

[0018] Specific implementation method six: Combination Figure 1 , Figure 2 The present embodiment is described as follows: the present embodiment is different from the first embodiment in that the pressure of the gas 5 is 0.1 Torr to 50 Torr. The other components and connection relationships are the same as those of the first embodiment.

[0019] Specific implementation method seven: Combination Figure 1 , Figure 2 The present embodiment is described as follows: the difference between the present embodiment and the first embodiment is that the spacing of the gap 5 - 1 is 0.1 mm to 10 mm. The other components and connection relationships are the same as those of the first embodiment.

[0020] Specific implementation method eight: Combination Figure 1 , Figure 2 The present embodiment is described in detail. The difference between the present embodiment and the first embodiment is that the gas 5 is in a plasma state after breakdown. The other components and connection relationships are the same as those of the first embodiment.

[0021] Specific implementation method nine: Combination Figure 1 , Figure 2 The present embodiment is described in detail. The difference between the present embodiment and the embodiment 1 or 8 is that the gas 5 is in a glow discharge state after breakdown. The other components and connection relationships are the same as those of the embodiment 1.

Claims

1. A plasma variable capacitance booster device, characterized in that It comprises a first conductive electrode (1), a second conductive electrode (2), a first dielectric (3), a second dielectric (4), and a gas (5); the right end face of the first conductive electrode (1) is tightly connected to the left end face of the first dielectric (3), the left end face of the second conductive electrode (2) is tightly connected to the right end face of the second dielectric (4), a gap (5-1) is arranged between the right end face of the first dielectric (3) and the left end face of the second dielectric (4), a gas (5) is arranged in the gap (5-1), and the gas (5) is an inert gas, so that a capacitor is formed in series with the first dielectric (3), the gas (5), and the second dielectric (4), and the first conductive electrode (1) and the second conductive electrode (2) are two electrodes of the capacitor.

2. A plasma variable capacitance booster device according to claim 1, characterized in that The material of the first dielectric (3) and the second dielectric (4) is a dielectric with a high dielectric constant.

3. A plasma variable capacitance booster device according to claim 1 or 2, characterized in that The material of the first dielectric (3) and the second dielectric (4) is barium titanate.

4. A plasma variable capacitance booster device according to claim 1 or 2, characterized in that The first dielectric (3) and the second dielectric (4) are made of calcium copper titanate.

5. The plasma variable capacitance booster device according to claim 1, characterized in that Its gas (5) is neon, argon, xenon, krypton or nitrogen.

6. The plasma variable capacitance booster device according to claim 1, characterized in that The pressure of its gas (5) is 0.1 Torr to 50 Torr.

7. The plasma variable capacitance booster device according to claim 1, characterized in that The spacing of its gap (5-1) is 0.1mm to 10mm.

8. The plasma variable capacitance booster device according to claim 1, characterized in that Its gas (5) is in a plasma state after breakdown.

9. A plasma variable capacitance booster device according to claim 1 or 8, characterized in that After its gas (5) is broken down, it enters a glow discharge state.

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