Ion beam current measuring head and ion beam current measuring device

Abstract

The invention discloses an ion beam current measuring head and an ion beam current measuring device, and the ion beam current measuring head comprises a collection plate which is used for collecting positive ions in an ion beam current; one end of each insulating element is fixedly connected with the collecting plate, the other end of each insulating element is arranged on the collecting plate in a sliding mode, and the sides, facing the center of the collecting plate, of the at least two insulating elements can define a closed graph; and the area of the closed pattern is gradually increased or gradually reduced along with the sliding of the at least two insulating elements on the collecting plate. Therefore, the ion beam current measuring head provided by the embodiment of the invention can adaptively adjust the area of the measuring hole, namely the closed graph, according to the density amplitude of the measured ion beam current.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor manufacturing equipment, and in particular to an ion beam current measuring head and an ion beam current measuring device. Background Art

[0002] Dry etching of semiconductor devices generally uses a radio frequency system to couple energy into the gas, which in turn triggers glow power generation to generate plasma, and then performs the etching process. Before etching, the ion beam current density and its distribution uniformity in the generated plasma source need to be measured.

[0003] The measurement principle of ion beam current density is as follows Figure 1 As shown, the measuring device includes a target plate 10a and a current transformer 20a. The target plate 10a is provided with a measuring hole 11a. The current transformer 20a can be arranged below the target plate 10a through a bracket 30a and directly opposite to the measuring hole 11a. During measurement, the measuring device directly faces the ion beam. When the ion beam moves to the surface of the target plate 10a and passes through the measuring hole 11a, the current transformer 20a collects the ion beam and converts it into an electrical signal, and then outputs the signal through the signal lead 40a, so that the ion beam current density can be calculated. The distribution uniformity of the ion beam current can be obtained by measuring the ion beam current density at different positions of the target plate 10a and then calculating the uniformity.

[0004] For the same plasma generation system, when the discharge conditions are different (for example, different powers), the density of the generated plasma will change significantly. When the density of the plasma source is small, the number of ions entering the measurement hole 11a is small, resulting in measurement errors, or even the measurement signal is submerged by the interference signal and cannot be accurately measured; when the density of the plasma source is large, the repulsion of the measurement system to electrons is reduced, resulting in false measurement data.

[0005] Since the size of the measuring hole 11a in the existing measuring device is fixed, when measuring ion beams of different densities, the vacuum chamber needs to be opened to replace the measuring device with a different size of the measuring hole 11a, which reduces the efficiency of research and development and the life of the vacuum system and increases the cost of research and development. Summary of the invention

[0006] In view of the above technical problems, the present application provides an ion beam current measuring head and an ion beam current measuring device, which can improve the problem that the measuring hole of the existing ion beam current measuring device cannot be adjusted according to the density amplitude of the measured ion beam current.

[0007] In order to solve the above technical problems, in a first aspect, an embodiment of the present application provides an ion beam current measuring head, comprising:

[0008] A collecting plate, used for collecting positive ions in the ion beam;

[0009] At least two insulating elements, each of which has one end fixedly connected to the collecting plate and the other end slidably disposed on the collecting plate, and the at least two insulating elements can form a closed figure on one side facing the center of the collecting plate, and the area of ​​the closed figure gradually increases or decreases as the at least two insulating elements slide on the collecting plate.

[0010] Optionally, the collecting plate is provided with fixing holes and first sliding grooves corresponding to the at least two insulating elements one by one;

[0011] The ion beam current measurement head also includes:

[0012] A first connecting member corresponding to each of the fixing holes, wherein the insulating element is connected to the fixing holes through the first connecting member;

[0013] A second connecting member corresponding one-to-one to the first sliding groove can be slidably arranged in the first sliding groove, one end of the second connecting member is connected to the insulating element, and the other end is used to receive an external driving force. The second connecting member moves along the first sliding groove under the external driving force to drive the insulating element to slide relative to the collecting plate with the first connecting member as the center.

[0014] Optionally, the at least two insulating elements are arranged obliquely relative to the collecting plate, and projections of two adjacent insulating elements on the collecting plate partially overlap;

[0015] The ion beam flow measurement head also includes a first insulating ring, which covers the at least two insulating elements, and the closed figure is located within the inner circle of the first insulating ring; the first insulating ring is used to reduce the warping degree of the at least two insulating elements relative to the collecting plate, while maintaining the rotation space of the at least two insulating elements.

[0016] Optionally, the collecting plate is provided with a first annular groove along the edge;

[0017] The first insulating ring is provided with a first annular boss protruding toward the collecting plate, and the first annular boss is cooperatively connected with the first annular groove.

[0018] Optionally, the ion beam measurement head further includes a positive ion screening component for screening positive ions and moving the positive ions toward the collecting plate.

[0019] Optionally, the positive ion screening component comprises:

[0020] A first conductive ring is disposed on the first insulating ring, and the closed pattern is located within an inner circle of the first conductive ring, and the first conductive ring is connected to a first negative potential;

[0021] A second insulating ring is disposed on the first conductive ring, and the closed pattern is located within an inner circle of the second insulating ring;

[0022] A second conductive ring is arranged on the second insulating ring, and the closed pattern is located within the inner circle of the second conductive ring, and the second conductive ring is connected to a positive potential;

[0023] The collecting plate is connected to a second negative potential, and an absolute value of the second negative potential is smaller than an absolute value of the first negative potential.

[0024] In a second aspect, an embodiment of the present application provides an ion beam current measuring device, comprising a fixing plate and an ion beam current measuring head as described in the above embodiments;

[0025] The fixing plate is provided with a plurality of grooves, and each of the grooves is provided with an ion beam current measuring head.

[0026] Optionally, when the collecting plate is provided with fixing holes and first slide grooves corresponding one-to-one to the at least two insulating elements, and the ion beam current measuring head further includes a first connecting member corresponding one-to-one to the fixing holes and a second connecting member corresponding one-to-one to the first slide groove, the bottom of the groove is provided with a first through hole and a second slide groove corresponding one-to-one to the first slide groove, and the second connecting member also passes through the corresponding second slide groove;

[0027] The ion beam current measuring device further comprises a rotation control component, which is arranged on a side of the fixing plate away from the ion beam current measuring head and connected to the second connecting member to provide an external driving force.

[0028] Optionally, the rotation control component includes:

[0029] A support plate, wherein a second annular boss is disposed on one side of the support plate facing the fixed plate, the projections of the plurality of grooves on the support plate are located within an area surrounded by the second annular boss, and a second through hole is further disposed on the second annular boss;

[0030] A driving source is arranged on the supporting plate;

[0031] a rotating plate, supported on the second annular boss and connected to the driving source, the rotating plate being provided with second fixing holes connected to the second connecting members in a one-to-one correspondence, and third through holes corresponding to the grooves in a one-to-one correspondence;

[0032] The driving source is used to drive the rotating plate to rotate relative to the supporting plate.

[0033] Optionally, a third annular boss is provided on one side of the support plate facing the fixing plate, and the third annular boss is arranged around the second annular boss to form a second annular groove for accommodating a cable therebetween;

[0034] The rotating plate is simultaneously supported on the third annular boss;

[0035] The third annular boss is provided with a fourth through hole.

[0036] Optionally, the driving source is a stepping motor, and a control rod of the stepping motor is connected to the rotating plate;

[0037] A slideway is arranged in the second annular groove, and the stepping motor is arranged in the slideway.

[0038] Optionally, there are more than three grooves, one of which is located at the center of the fixing plate, and the remaining grooves are evenly distributed on the same circumference, and the center of the circumference is the center of the fixing plate.

[0039] Optionally, the ion beam current measuring device further comprises a current measuring system electrically connected to the collecting plate;

[0040] When the ion beam flow measuring device measures the ion beam flow in a process chamber of a semiconductor process equipment, the fixed plate is arranged in the process chamber, and a side of the fixed plate provided with the ion beam flow measuring head faces the ion beam flow, and the current measurement system is used to measure the current formed by positive ions in the ion beam flow.

[0041] As described above, in the ion beam flow measuring head of the present application, one end of all insulating elements is fixedly connected to the collecting plate, and the other end is slidably disposed on the collecting plate, that is, the insulating elements can rotate relative to the collecting plate. During the sliding process, all insulating elements can enclose a closed figure on one side facing the center of the collecting plate, and the area of ​​the closed figure gradually increases or decreases as the insulating elements slide on the collecting plate. Therefore, the ion beam flow measuring head of this embodiment can adaptively adjust the area of ​​the measuring hole, i.e., the closed figure, according to the density amplitude of the measured ion beam flow. By using the ion beam flow measuring head provided by this embodiment, it is possible to accurately measure the density and uniformity of ion beam sources of different densities by only automatically adjusting the area of ​​the measuring hole, i.e., the closed figure, without opening the process chamber of the semiconductor process equipment (i.e., without opening the chamber and maintaining the vacuum environment) or replacing the measuring device. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor.

[0043] Figure 1 It is a schematic diagram of the measurement principle of ion beam current density;

[0044] Figure 2 It is a schematic diagram of the exploded structure of an ion beam current measurement device provided in an embodiment of the present application;

[0045] Figure 3 yes Figure 2 A schematic diagram of a partial cross-sectional structure of an ion beam current measuring device including an ion beam current measuring head;

[0046] Figure 4 yes Figure 3 A schematic diagram of a three-dimensional cross-sectional structure of an ion beam current measurement head;

[0047] Figure 5 is a schematic structural diagram of an insulating element provided in an embodiment of the present application;

[0048] Figure 6 It is a schematic diagram of a structure in which a plurality of insulating elements enclose a closed area provided in an embodiment of the present application;

[0049] Figure 7 yes Figure 6 A schematic diagram of the area change of the closed area of ​​multiple insulating elements during the rotation process;

[0050] Figure 8 It is a structural schematic diagram of an arrangement of multiple insulating elements provided in an embodiment of the present application;

[0051] Fig. 9 It is a structural schematic diagram of a fixing plate provided in an embodiment of the present application;

[0052] Fig.10 is a structural schematic diagram of a support plate provided in an embodiment of the present application;

[0053] Fig.11 is a structural schematic diagram of a rotating plate provided in an embodiment of the present application;

[0054] Fig.12 This is an application scenario diagram of an ion beam flow measurement device provided in an embodiment of the present application.

[0055] The realization of the purpose, functional features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The above-mentioned drawings have shown clear embodiments of this application, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0056] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0057] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0058] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0059] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless otherwise indicated in the context.

[0060] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0061] For ease of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.

[0062] First, the application scenario of the ion beam current measurement head of this application is introduced. Figure 2 , Figure 2 1 is a schematic diagram of the exploded structure of an ion beam current measuring device provided in an embodiment of the present application, and the ion beam current measuring head of the embodiment of the present application can be applied to the ion beam current measuring device. Specifically, the ion beam current measuring device may include a fixed plate 500, a rotation control component 600, and a plurality of ion beam current measuring heads 100. A plurality of grooves 51 may be provided on the fixed plate 500, and an ion beam current measuring head 100 is provided in each groove 51. The rotation control component 600 is provided on a side of the fixed plate 500 away from the ion beam current measuring head 100 to control the movement of the ion beam current measuring head 100.

[0063] See also Figure 3-Figure 7 , Figure 3 yes Figure 2 A schematic diagram of a partial cross-sectional structure of an ion beam current measuring device including an ion beam current measuring head, Figure 4 yes Figure 3 Schematic diagram of the three-dimensional cross-sectional structure of the ion beam current measurement head. Figure 5 is a schematic diagram of the structure of an insulating element provided in an embodiment of the present application, Figure 6 is a schematic diagram of a structure in which a plurality of insulating elements enclose a closed area provided in an embodiment of the present application, Figure 7 yes Figure 6 The ion beam current measuring head 100 may include: a collecting plate 10 and at least two insulating elements 20.

[0064] The collecting plate 10 is used to collect positive ions in the ion beam. The collecting plate 10 is a conductive plate and is used to connect to a current measurement system. The current measurement system can measure the current of the positive ions. The measured current value can reflect the intensity of the plasma. As an example, the collecting plate 10 can be made of a high temperature resistant and sputtering resistant material, such as graphite or molybdenum. One end of each insulating element 20 is fixedly connected to the collecting plate 10, and the other end is slidably disposed on the collecting plate 10, that is, the insulating element 20 can rotate relative to the collecting plate 10. During the sliding process, all insulating elements 20 can enclose a closed figure on one side facing the center of the collecting plate 10, and the area of ​​the closed figure gradually increases or decreases as the insulating element 20 slides on the collecting plate 10.

[0065] It can be understood that the closed figure in this embodiment is the measuring hole of the ion beam current measuring head. The schematic diagram of the process of the insulating element 20 rotating relative to the collecting plate 10 is shown in FIG. Figure 7 As shown, when the insulating element 20 rotates 15° and further rotates to 25°, the area of ​​the closed figure (shaded area) gradually decreases. Therefore, the ion beam flow measurement head of this embodiment can adaptively adjust the area of ​​the measurement hole, i.e., the closed figure, according to the density amplitude of the measured ion beam flow. By using the ion beam flow measurement head provided by this embodiment, it is possible to accurately measure the density and uniformity of ion beam sources of different densities by automatically adjusting the area of ​​the measurement hole, i.e., the closed figure, without opening the process chamber of the semiconductor process equipment (i.e., not opening the chamber and maintaining the vacuum environment) or replacing the measuring device.

[0066] It should be noted that the connection method of the insulating element 20 relative to the collecting plate 10 is not particularly limited in this application. Figure 3-Figure 7 The ion beam current measuring device may further include: a first connecting member 23 corresponding one-to-one with the insulating element 20 and a second connecting member 24 corresponding one-to-one with the insulating element 20. A fixing hole 21 and a first slide groove 22 corresponding one-to-one with the insulating element 20 may be provided on the collecting plate 10. The ion beam current measuring device may further include: a first connecting member 23 corresponding one-to-one with the fixing hole 21 and a second connecting member 24 corresponding one-to-one with the first slide groove 22. The insulating element 20 is connected to the fixing hole 21 through the first connecting member 23. The first connecting member 23 may be a connecting shaft, or a screw, etc. The second connecting member 24 may be slidably disposed in the first slide groove 22. One end of the second connecting member 24 is connected to the insulating element 20, and the other end is used to receive an external driving force. The second connecting member 24 moves along the first slide groove 22 under the external driving force to drive the insulating element 20 to slide relative to the collecting plate 10 with the first connecting member 23 as the center.

[0067] For example, the second connecting member 24 moves along the first slide groove 22 under an external driving force to drive the insulating element 20 to rotate from the first extreme position to the second extreme position with the first connecting member 23 as the center, and in the process of the insulating element 20 rotating from the first extreme position to the second extreme position, all the insulating elements 20 facing the center of the collecting plate 10 can form a closed figure (i.e., a measuring hole), and the area of ​​the closed figure gradually increases or decreases. The second connecting member 24 can be a connecting shaft, or a screw, etc. The first slide groove 22 can be an arc shape with a preset radius, and the center of the circle is located at the center of the first connecting member 23. In addition, a first connecting hole 25 and a second connecting hole 26 can be set on the insulating element 20 to be connected to the first connecting member 23 and the second connecting member 24 respectively. The insulating element 20 is used to block positive ions and only allow positive ions to move from the area corresponding to the closed figure to the collecting plate 10.

[0068] It can be understood that the closed figure in this embodiment is the measuring hole of the ion beam flow measuring head. The working principle of the ion beam flow measuring head in this embodiment is: taking the case where the area of ​​the closed figure is the largest when the insulating element 20 is in the first extreme position as an example, when the insulating element 20 is in the first extreme position, the area of ​​the closed figure is the largest, so that the area of ​​the collecting plate 10 that is not blocked by the insulating element 20 and exposed to the closed figure is also the largest, so that the collecting plate 10 can receive more positive ions. When it is necessary to reduce the area of ​​the closed figure, a driving force can be applied to the second connecting member 24 to move the second connecting member 24 along the first slide groove 22. The second connecting member 24 drives the insulating element 20 to rotate from the first extreme position to the second extreme position with the first connecting member 23 as the center. The schematic diagram of the rotation process is shown in FIG. Figure 7 As shown, when the insulating element 20 rotates 15° and further rotates to 25°, the area of ​​the closed figure (shaded area) gradually decreases. Therefore, the ion beam current measurement head of this embodiment can adaptively adjust the area of ​​the measurement hole, i.e., the closed figure, according to the density amplitude of the measured ion beam current.

[0069] It should be noted that Figure 5-Figure 7 The shape, number and arrangement of the insulating element 20 are only one embodiment. In other embodiments, the insulating element 20 may be a triangle, a rectangle, or an irregular polygon, etc., which is not particularly limited in the embodiments of the present application. As an example, when the insulating element 20 is in the first extreme position, the closed figure may be a circle, and the area of ​​the closed figure gradually decreases during the process of the insulating element 20 rotating from the first extreme position to the second extreme position.

[0070] In one embodiment, see Figure 3 , Figure 4 and Figure 8 , Figure 8It is a structural schematic diagram of a multiple insulating element arrangement method provided in an embodiment of the present application, wherein the insulating element 20 is arranged obliquely relative to the collecting plate 10, and the projections of two adjacent insulating elements 20 on the collecting plate 10 partially overlap. As an example, the insulating element 20 can be made of polytetrafluoroethylene. The ion beam measurement head 100 also includes a first insulating ring 30, which covers all the insulating elements 20, and the closed figure is located within the inner circle of the first insulating ring 30, that is, the inner circle opening of the first insulating ring 30 cannot be less than the maximum area of ​​the closed figure. The first insulating ring 30 is used to reduce the degree of warping of the insulating element 20 relative to the collecting plate 10, while maintaining the rotation space of at least two insulating elements 20.

[0071] In this embodiment, the insulating element 20 is tilted relative to the collecting plate 10, and two adjacent insulating elements 20 partially overlap each other, so that the "side wall" of the measuring hole (closed pattern) can be more sealed.

[0072] As an example, see Figure 3 and Figure 4 The collecting plate 10 may be provided with a first annular groove 11 along the edge, and the first insulating ring 30 may be provided with a first annular boss 31 protruding toward the collecting plate 10. The first annular boss 31 is matched and connected with the first annular groove 11 to realize the assembly positioning of the two. At the same time, the height of the first annular boss 31 may be set to control the degree of downward pressure of the first insulating ring 30 on the insulating element 20.

[0073] It should be noted that the first insulating ring 30 can be a single component, or can be formed by stacking two or more different components. Figure 4 and Figure 8 The first insulating ring 30 may include an insulating pressure ring 301 covered on the insulating element 20 , and an insulating cover 302 disposed on the insulating pressure ring 301 , and the first annular boss 31 is disposed on a side of the insulating pressure ring 301 facing the collecting plate 10 .

[0074] In one embodiment, the ion beam current measurement head 100 may further include a positive ion screening component 40, which is used to screen positive ions and move the positive ions toward the collecting plate 10. The filtered electrons may be conducted away through grounding.

[0075] As an example, see Figure 3 and Figure 4, the positive ion screening component 40 may include: a first conductive ring 41, a second insulating ring 42 and a second conductive ring 43. The first conductive ring 41 is arranged on the first insulating ring 30, and the closed figure is located within the inner circle of the first conductive ring 41, and the first conductive ring 41 is connected to the first negative potential -U1 (U1>0). The second insulating ring 42 is arranged on the first conductive ring 41, and the closed figure is located within the inner circle of the second insulating ring 42. The second conductive ring 43 is arranged on the second insulating ring 42, and the closed figure is located within the inner circle of the second conductive ring 43, and the second conductive ring 43 is connected to the positive potential +U0 (U0>0). The collecting plate 10 is connected to the second negative potential -U2 (U2>0), and the absolute value of the second negative potential -U2 is less than the absolute value of the first negative potential -U1, that is, U2<U1.

[0076] In this embodiment, the first conductive ring 41, the second insulating ring 42 and the second conductive ring 43 are stacked, the second insulating ring 42 separates the first conductive ring 41 and the second conductive ring 43 to maintain their own independent potentials, and the first insulating ring 30 separates the first conductive ring 41 and the collecting plate 10 to maintain their own independent potentials. Since the second conductive ring 43 is connected to the positive potential +U0 and has the highest potential, the direction of the electric field is from the second conductive ring 43 to the first conductive ring 41. Therefore, when the plasma approaches the second conductive ring 43, the electrons therein will not enter the inner ring of the second conductive ring 43 under the action of the electric field, while the positive ions are accelerated to move in the direction of the first conductive ring 41 under the action of the electric field. At the same time, since the potential of the first conductive ring 41 is higher than the potential of the collecting plate 10, the positive ions can be decelerated in the process of moving toward the collecting plate 10, reducing the collision energy, and avoiding strong sputtering on the collecting plate 10, which reduces the life of the collecting plate 10.

[0077] In some embodiments, please refer to Figure 3 and Figure 4 In order to maintain the insulation of the outside of the ion beam current measuring head, the ion beam current measuring head 100 may further include an insulating cylinder 44, and the collecting plate 10 and other components are all located inside the insulating cylinder 44. In addition, the first conductive ring 41, the second insulating ring 42, and the second conductive ring 43 may be fixed to the collecting plate 10 by screws 45, and a plurality of screws 45 may be provided and evenly distributed along the circumference. Further, the outer side surface of the first insulating ring 30 may be provided with a gap 46 (to avoid the screws 45) with the insulating cylinder 44, so that the screws 45 can pass through the gap 46 and be connected to the collecting plate 10.

[0078] The present application also provides an ion beam current measuring device. Figure 2 , Figure 3 , Figure 4 and Fig. 9 , Fig. 9is a schematic diagram of the structure of a fixing plate provided in an embodiment of the present application. The ion beam current measuring device may include a fixing plate 500 and an ion beam current measuring head 100 as described in the above embodiments. A plurality of grooves 51 may be provided on the fixing plate 500, and an ion beam current measuring head 100 is provided in each groove 51. Each ion beam current measuring head 100 may measure the plasma density at a corresponding position, and the uniformity of the plasma distribution may be calculated through the test data of the plurality of ion beam current measuring heads 100.

[0079] In one embodiment, please refer to Figure 2 , Figure 3 , Figure 4 and Fig. 9 , a first through hole 53 and a second slide groove 52 may also be provided at the bottom of the groove 51 of the fixed plate 500. The first through hole 53 is used for the cable 71 to pass through. For example, a cable feeding pipe 54 may be provided at the first through hole 53, and the cable 71 passes through the cable feeding pipe 54 and is connected to the collecting plate 10. The second slide groove 52 corresponds one-to-one to the first slide groove 22 of the ion beam flow measuring head 100, and the second connecting member 24 also passes through the corresponding second slide groove 52. The second slide groove 52 and the first slide groove 22 may both be arc-shaped with the same radius, and at least partially overlap in the projection direction to the collecting plate 10. The lengths of the second slide groove 52 and the first slide groove 22 may be the same or different. The ion beam flow measuring device may also include a rotation control component 600, which is provided on a side of the fixed plate 500 away from the ion beam flow measuring head 100 and is connected to the second connecting member 24 to provide an external driving force. The rotation control assembly 600 can drive the second connecting member 24 to slide along the second sliding groove 52, thereby driving the insulating element 20 to rotate to adjust the size of the measuring hole.

[0080] In this embodiment, each ion beam current measuring head 100 can measure the plasma density at the corresponding position, and the uniformity of the plasma distribution can be measured by changing the arrangement of the ion beam current measuring heads 100. For example, more than three grooves 51 can be provided, one of which is located at the center of the fixing plate 500, and the remaining grooves 51 are evenly distributed on the same circumference, and the center of the circumference is the center of the fixing plate 500.

[0081] For example, the grooves 51 are provided with seven grooves. Figure 3 and Fig. 9, where six grooves 51 are located at the vertices of a regular hexagon, and another groove 51 is located at the center of the regular hexagon. When measuring the plasma beam, the second conductive ring 43 is added with a positive potential +U0, the first conductive ring 41 is added with a first negative potential -U1, and the collecting plate 10 is added with a second negative potential -U2. Each collecting plate 10 is connected to an independent ammeter via a cable 71 to measure the ion current amplitude collected by a single ion beam measuring head 100 at the corresponding position. When measuring the uniformity of the ion beam, the current peak value I collected by the ion beam measuring head 100 at different positions is used. i (where i represents the i-th ion beam current measurement head 100) to calculate the uniformity U, the calculation formula is as follows:

[0082] U=(I imax / SI imin / S) / (I imax / S+I imin / S)

[0083] Among them, I imax Represents the maximum value of the measured current, I imin represents the minimum value of the measurement current, and S represents the area of ​​the measurement hole (ie, the closed shape of the ion beam current measurement head 100).

[0084] As an example, see Figure 3 and Figure 4 , the fixed plate 500 can be made of metal material, and the fixed plate 500 can absorb other ion beams that have not entered the ion beam measuring head 100 to reduce ion sputtering. In order to maintain the insulation between the ion beam measuring head 100 and the fixed plate 500, an insulating cylinder 44 can be set on the outside of the ion beam measuring head 100. Of course, the insulating cylinder 44 can also be set in the groove 51 to insulate the ion beam measuring head 100. In addition, a third slide groove 441 corresponding to the second slide groove 52 can be set on the insulating cylinder 44, and the second connecting member 24 also passes through the corresponding third slide groove 441. The third slide groove 441, the second slide groove 52, and the first slide groove 22 can all be arcs with the same radius, and the three at least partially overlap in the projection direction to the collecting plate 10. The length of the third slide groove 441 and the second slide groove 52 can be the same or different.

[0085] In one embodiment, see Figure 2 and Figure 3 The rotation control assembly 600 may include: a support plate 61, a driving source 62 and a rotation plate 63. Fig.10 , Fig.10: is a structural schematic diagram of a support plate provided by an embodiment of the present application. A second annular boss 611 is provided on one side of the support plate 61 facing the fixed plate 500. The projections of all the grooves 51 on the support plate 61 are located within the area surrounded by the second annular boss 611. The second annular boss 611 is also provided with a second through hole 616 for the cable 71 to pass through. The driving source 62 is provided on the support plate 61, and the rotating plate 63 is supported on the second annular boss 611, so that a hollow portion 617 can be formed in the area surrounded by the second annular boss 611. Since the grooves 51 are all located above the hollow portion 617, the cable 71 can be accommodated in the hollow portion 617. The rotating plate 63 is also connected to the driving source 62. The rotating plate 63 is provided with a second fixing hole 631 connected to the second connecting member 24 in a one-to-one correspondence, and a third through hole 632 corresponding to the groove 51 and used for the cable 71 to pass through. The driving source 62 is used to drive the rotating plate 63 to rotate relative to the supporting plate 61. When the rotating plate 63 rotates, it can push the second connecting member 24 to slide along the second sliding groove 52, thereby driving the insulating element 20 to rotate to adjust the size of the measuring hole.

[0086] In one embodiment, please refer to Fig.10 The support plate 61 is provided with a third annular boss 612 on one side facing the fixed plate 500. The third annular boss 612 is arranged around the second annular boss 611 to form a second annular groove 613 for accommodating the cable therebetween. The rotating plate 63 is supported on the third annular boss 612 to form an annular sealed cavity. The third annular boss 612 is provided with a fourth through hole 614 for the cable 71 to pass through to connect to an external circuit, such as a current measurement system.

[0087] As an example, see Fig.10 and Fig.11 The driving source 62 may be a stepper motor, and the control rod 621 of the stepper motor is connected to the rotating plate 63. For example, a connecting hole 633 may be provided on the rotating plate 63, and the control rod 621 of the stepper motor is connected to the connecting hole 633. A slideway 615 is provided in the second annular groove 613, and the stepper motor is provided in the slideway 615. When the stepper motor moves along the slideway 615, the rotating plate 63 may be driven to rotate through the control rod 621. For example, when the stepper motor rotates counterclockwise on the slideway 615, the rotating plate 63 is driven to rotate on the second annular boss 611 through the control rod 621. Then, the insulating element 20 is driven to rotate counterclockwise around the first connecting member 23 corresponding to each other through the second connecting member 24 (please refer to FIG. 24 for details). Figure 7 ), causing the overlapping area of ​​the insulating element 20 to increase, thereby reducing the size of the closed figure (i.e., the measuring hole). On the contrary, when the stepper motor rotates clockwise on the slideway 615, the size of the measuring hole can be increased.

[0088] See also Fig.12 , Fig.12 It is an application scenario diagram of an ion beam current measuring device provided in an embodiment of the present application. The semiconductor process equipment includes a process chamber 700, a plasma source generating system 701 is arranged in the process chamber 700, and a lower electrode system 702 arranged opposite to the plasma source generating system 701, and the ion beam current measuring device is installed inside the process chamber 700 through a fixed flange 703, and the fixed flange 703 is a standard part, and an insulating sleeve 704 is arranged inside, and a metal terminal is arranged on the insulating sleeve 704 for connecting the connecting wire of the current measuring system and the motor control wire. When measuring the ion beam current density, the ion beam current measuring device is placed downstream of the ion beam in advance, and the fixed plate 500 is provided with a side of the ion beam current measuring head 100 facing the ion beam. When the positive ions in the ion beam flow enter the ion beam current measuring device through the ion beam current measuring head 100, the current measuring system converts the collected positive ion flow into an electrical signal, and outputs the ion beam current density at the corresponding position and the uniformity of the ion beam current density. By using the ion beam flow measurement head provided in this embodiment, it is possible to accurately measure the density and uniformity of ion beam sources of different densities without opening the process chamber of the semiconductor process equipment (i.e., not opening the chamber and maintaining the vacuum environment) or replacing the measuring device, only by automatically adjusting the measuring hole, i.e., the area of ​​the closed figure.

[0089] The above is a detailed introduction to an ion beam flow measurement head and an ion beam flow measurement device provided by the present application. This article uses specific examples to illustrate the principles and implementation methods of the present application. It should be noted that in the present application, the descriptions of each embodiment have their own emphasis. For parts that are not described or recorded in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0090] The above are only preferred embodiments of the present application, and the patent scope of the present application is not limited thereto. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, as long as there is no contradiction in the combination of these technical features, are equally included in the patent protection scope of the present application.

Claims

1. An ion beam current measuring head, characterized in that: include: A collecting plate, used for collecting positive ions in the ion beam; At least two insulating elements, each of which has one end fixedly connected to the collecting plate and the other end slidably disposed on the collecting plate, and the at least two insulating elements can form a closed figure on one side facing the center of the collecting plate, and the area of ​​the closed figure gradually increases or decreases as the at least two insulating elements slide on the collecting plate.

2. The ion beam current measuring head according to claim 1, characterized in that: The collecting plate is provided with fixing holes and first sliding grooves corresponding to the at least two insulating elements one by one; The ion beam current measurement head also includes: A first connecting member corresponding to each of the fixing holes, wherein the insulating element is connected to the fixing holes through the first connecting member; A second connecting member corresponding one-to-one to the first sliding groove can be slidably arranged in the first sliding groove, one end of the second connecting member is connected to the insulating element, and the other end is used to receive an external driving force. The second connecting member moves along the first sliding groove under the external driving force to drive the insulating element to slide relative to the collecting plate with the first connecting member as the center.

3. The ion beam current measuring head according to claim 2, characterized in that: The at least two insulating elements are arranged obliquely relative to the collecting plate, and projections of two adjacent insulating elements on the collecting plate partially overlap; The ion beam flow measurement head also includes a first insulating ring, which covers the at least two insulating elements, and the closed figure is located within the inner circle of the first insulating ring; the first insulating ring is used to reduce the warping degree of the at least two insulating elements relative to the collecting plate, while maintaining the rotation space of the at least two insulating elements.

4. The ion beam current measuring head according to claim 3, characterized in that: The collecting plate is provided with a first annular groove along the edge; The first insulating ring is provided with a first annular boss protruding toward the collecting plate, and the first annular boss is cooperatively connected with the first annular groove.

5. The ion beam current measuring head according to claim 4, characterized in that: It also includes a positive ion screening component for screening positive ions and moving the positive ions toward the collecting plate.

6. The ion beam current measuring head according to claim 5, characterized in that: The positive ion screening component comprises: A first conductive ring is disposed on the first insulating ring, and the closed pattern is located within an inner circle of the first conductive ring, and the first conductive ring is connected to a first negative potential; A second insulating ring is disposed on the first conductive ring, and the closed pattern is located within an inner circle of the second insulating ring; A second conductive ring is arranged on the second insulating ring, and the closed pattern is located within the inner circle of the second conductive ring, and the second conductive ring is connected to a positive potential; The collecting plate is connected to a second negative potential, and an absolute value of the second negative potential is smaller than an absolute value of the first negative potential.

7. An ion beam current measuring device, characterized in that: It comprises a fixing plate and an ion beam current measuring head according to any one of claims 1 to 6; The fixing plate is provided with a plurality of grooves, and each of the grooves is provided with an ion beam current measuring head.

8. The ion beam current measuring device according to claim 7, characterized in that: When the collecting plate is provided with fixing holes and first slide grooves corresponding to the at least two insulating elements in a one-to-one manner, and the ion beam current measuring head further includes a first connecting member corresponding to the fixing holes in a one-to-one manner and a second connecting member corresponding to the first slide groove in a one-to-one manner, the bottom of the groove is provided with a first through hole and a second slide groove corresponding to the first slide groove in a one-to-one manner, and the second connecting member also passes through the corresponding second slide groove; The ion beam current measuring device further comprises a rotation control component, which is arranged on a side of the fixing plate away from the ion beam current measuring head and connected to the second connecting member to provide an external driving force.

9. The ion beam current measuring device according to claim 8, characterized in that: The rotation control assembly comprises: A support plate, wherein a second annular boss is disposed on one side of the support plate facing the fixed plate, the projections of the plurality of grooves on the support plate are located within an area surrounded by the second annular boss, and a second through hole is further disposed on the second annular boss; A driving source is arranged on the supporting plate; a rotating plate, supported on the second annular boss and connected to the driving source, the rotating plate being provided with second fixing holes connected to the second connecting members in a one-to-one correspondence, and third through holes corresponding to the grooves in a one-to-one correspondence; The driving source is used to drive the rotating plate to rotate relative to the supporting plate.

10. The ion beam current measuring device according to claim 9, characterized in that: A third annular boss is disposed on one side of the support plate facing the fixing plate, and the third annular boss is disposed around the second annular boss to form a second annular groove for accommodating a cable therebetween; The rotating plate is simultaneously supported on the third annular boss; The third annular boss is provided with a fourth through hole.

11. The ion beam current measuring device according to claim 10, characterized in that: The driving source is a stepping motor, and the control rod of the stepping motor is connected to the rotating plate; A slideway is arranged in the second annular groove, and the stepping motor is arranged in the slideway.

12. The ion beam current measuring device according to any one of claims 7 to 11, characterized in that: There are more than three grooves, one of which is located at the center of the fixing plate, and the remaining grooves are evenly distributed on the same circumference, and the center of the circumference is the center of the fixing plate.

13. The ion beam current measuring device according to claim 12, characterized in that: Also included is a current measurement system electrically connected to the collection plate; When the ion beam flow measuring device measures the ion beam flow in a process chamber of a semiconductor process equipment, the fixed plate is arranged in the process chamber, and a side of the fixed plate provided with the ion beam flow measuring head faces the ion beam flow, and the current measurement system is used to measure the current formed by positive ions in the ion beam flow.

Images