LED device and preparation method thereof

Abstract

The invention provides an LED device and a preparation method thereof, and belongs to the technical field of semiconductor preparation. The LED device comprises a support bowl cup, a flip chip arranged at the bottom of the support bowl cup, arc-shaped glue which is located on the outer side of the flip chip and covers the side face of the flip chip, a fluorescent piece which is located on the top of the flip chip and covers the flip chip and the arc-shaped glue, and reflective glue which fills a gap in the support bowl cup. The height of the reflective glue is between the height of the top of the fluorescent sheet and the height of the bottom of the fluorescent sheet, the bottom of the arc-shaped glue is in an arc shape, the included angle between the bottom of the arc-shaped glue and the horizontal plane is an arc-shaped angle, and the arc-shaped angle ranges from 30 degrees to 50 degrees. The LED device provided by the invention solves the problems that the brightness of the LED device in the prior art is difficult to improve, and the fluorescent glue and the bracket are stripped in an extreme environment.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to an LED device and a preparation method thereof. Background Art

[0002] LED chip is a semiconductor electronic component that can emit light. It has the characteristics of small size, high brightness and low energy consumption. It is widely used in lighting and other fields. LED chip is a solid light source, which is a light-emitting device made of semiconductor PN junction. When the forward current is turned on, the minority carriers (i.e. electrons) and majority carriers (i.e. holes) in the semiconductor recombine, and the released energy is emitted in the form of photons or part of it in the form of photons. LED chip lighting has significant advantages such as high efficiency, energy saving, environmental protection and long service life. It has been widely used in various aspects such as street lights, display screens, indoor lighting and car lights. LED devices are composed of LED chip packages.

[0003] As the current LED packaging technology matures, the brightness of LEDs is gradually approaching its limit. It is difficult to increase the brightness of LEDs by adjusting the bracket angle and the excitation effect of phosphors. As the concepts and requirements of green energy conservation and carbon neutrality continue to increase, higher requirements are placed on the brightness of LEDs.

[0004] In the existing LED packaging technology, blue light chips are used to excite red and green phosphors to achieve white light. High-brightness LEDs are realized by maximizing the brightness of the chip body, maximizing the brightness of the phosphor body, and refraction of the bracket bowl angle to achieve maximum light output. The higher the refractive index of the silicone in the bowl, the better it is for improving brightness.

[0005] However, in current technology, the refractive index of silicone has reached a limit of 1.55. Therefore, given the chip brightness, phosphor brightness, bracket cup angle refraction, and the relative bottleneck of silicone, it is extremely difficult to further improve the brightness of LEDs. In addition, existing LED devices usually use a design that sets the chip in a bowl-shaped bracket and fills it with high-concentration fluorescent glue. During high-temperature use, especially under extreme climate change, the fluorescent colloid is easy to peel off from the bowl-shaped bracket, affecting the product's performance and life. Summary of the invention

[0006] Based on this, the purpose of the present invention is to provide an LED device and a preparation method thereof, so as to solve the problem that it is difficult to improve the brightness of LED devices in the prior art, and there is a problem of peeling of fluorescent glue and bracket under extreme environments.

[0007] The present invention provides an LED device, characterized in that it includes a bracket bowl, a flip chip arranged at the bottom of the bracket bowl, an arc glue located on the outside of the flip chip and covering the side of the flip chip, a fluorescent sheet located on the top of the flip chip and covering the flip chip and the arc glue, and a reflective glue filling the gap in the bracket bowl, the height of the reflective glue is between the top height and the bottom height of the fluorescent sheet, the bottom of the arc glue is in an arc shape, the angle between the bottom of the arc glue and the horizontal plane is an arc angle, and the degree of the arc angle is 30°-50°.

[0008] Preferably, the height of the arc glue is consistent with the height of the flip chip, and the length of the arc glue is 250 μm-350 μm.

[0009] Preferably, the outer contour size of the fluorescent sheet is consistent with the outer contour size of the arc-shaped glue, and the thickness of the fluorescent sheet is 80 μm-100 μm.

[0010] Preferably, the adhesion between the arc-shaped glue and the flip chip is 2.5N / mm-15N / mm.

[0011] The present invention also provides a method for preparing an LED device, the method comprising:

[0012] Providing a substrate, and bonding the double-sided film to the substrate;

[0013] Arrange the flip chips in reverse order on the double-sided film at a preset spacing, and apply glue in a counterclockwise direction along the outer side of the flip chips;

[0014] Place the flip chip and substrate after applying glue into a baking oven for baking, so that the glue forms an arc glue, and then perform reverse molding;

[0015] A bracket is provided, and solder paste is arranged on the bracket, and the flip chip with arc glue after inverting is transferred to the solder paste for reflow soldering;

[0016] Placing a phosphor sheet on top of the flip chip and baking it;

[0017] After baking, fill the bottom of the bracket and the gap of the flip chip with curved glue with reflective glue;

[0018] The included angle between the bottom of the arc-shaped rubber and the horizontal plane is an arc angle, and the arc angle is 30°-50°.

[0019] Preferably, the adhesion between the double-sided film and the contact surface of the flip chip is 2.5N / mm-15N / mm.

[0020] Preferably, the amount of adhesive on the outer side of the flip chip is 0.123 g / kpcs-0.135 g / kpcs.

[0021] Preferably, the flip chip and substrate after adhesive application are placed in a baking oven for preliminary baking and final baking. The preliminary baking temperature is 60° C.-100° C. and the baking time is 20 min-40 min.

[0022] Preferably, the shaping baking temperature is 130° C.-170° C., and the baking time is 100 min-140 min.

[0023] Preferably, the thickness of the adhesive on the contact surface of the double-sided film and the flip chip is 12 μm-17 μm, the thickness of the adhesive on the other side is 23 μm-27 μm, and the thickness of the double-sided film is 110 μm-120 μm.

[0024] The present invention also provides an LED device, which is prepared by the LED device preparation method described by the above personnel.

[0025] Preferably, the LED device includes a bracket bowl, a flip chip arranged at the bottom of the bracket bowl, a fluorescent sheet located on the top of the flip chip and covering the flip chip, an arc-shaped glue located on the outside of the flip chip and covering the side of the flip chip, and a reflective glue filling the gap in the bracket bowl, and the height of the reflective glue is between the top height and the bottom height of the fluorescent sheet.

[0026] The present invention arranges arc glue on the outside of the flip chip so that the light from the side of the flip chip passes through the arc glue as a light guide channel, is reflected by the reflective glue, and is all emitted by the fluorescent sheet, thereby improving the luminous brightness of the front of the LED device. In addition, the effect of the light emitted from the side on improving the luminous brightness of the front of the LED device is adjusted by adjusting the curvature of the reflective glue. In addition, the preparation process of this method does not use fluorescent glue, so the problem of separation of the fluorescent colloid and the bowl-cup type bracket will not occur due to the difference in expansion coefficient between the fluorescent glue and the bracket plastic, so that it can be used under more extreme high and low temperature conditions. Therefore, the present invention solves the difficulty in improving the brightness of LED devices in the prior art, and the problem of separation of the fluorescent glue and the bracket under extreme environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic structural diagram of an LED device in one embodiment of the present invention;

[0028] Figure 2 is a flow chart of a method for preparing an LED device in one embodiment of the present invention;

[0029] The following specific implementation manner will further illustrate the present invention in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0030] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Several embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0031] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0033] like Figure 1 As shown, the present invention discloses a partial structural schematic diagram of an LED device, wherein the LED device includes a bracket bowl 10, a flip chip 20 arranged at the bottom of the bracket bowl, an arc glue 40 located on the outside of the flip chip 20 and covering the side of the flip chip 20, a fluorescent sheet 30 located on the top of the flip chip 20 and covering the flip chip 20 and the arc glue 40, and a reflective glue 50 filling the gap in the bracket bowl. The height of the reflective glue 50 is between the top height and the bottom height of the fluorescent sheet 30, and the angle between the bottom of the arc glue 40 and the horizontal plane is an arc angle, and the degree of the arc angle is 30°-50°. The arc glue forms a light guide channel and cooperates with the reflective glue to reflect the side light of the flip chip through the fluorescent sheet, thereby improving the luminous brightness of the LED device. In addition, the angle of the arc glue is adjusted through specific process parameters, so that the effect of improving the luminous brightness of the LED device can be adjusted.

[0034] Specifically, the outer contour size of the fluorescent sheet is consistent with the outer contour size of the arc glue, and the thickness of the fluorescent sheet is 80μm-100μm. For example, the thickness of the fluorescent sheet is 80μm, 85μm, 90μm, 95μm or 100μm, but not limited to this. The height of the arc glue is consistent with the height of the flip chip, and the length of the arc glue, that is, the distance from the outermost side of the arc glue to the flip chip, is 250μm-350μm. For example, the length of the arc glue is 250μm, 275μm, 300μm, 325μm or 350μm, but not limited to this. The adhesion between the arc glue and the contact surface of the flip chip is 2.5N / mm-15N / mm. Exemplarily, the adhesion between the arc glue and the contact surface of the flip chip is 2.5N / mm, 5N / mm, 7.5N / mm, 10N / mm, 12N / mm or 15N / mm, but not limited to this; the degree of the arc angle is 30°-50°. Exemplarily, the degree of the arc angle is 30°, 35°, 40°, 45° or 50°, but not limited to this.

[0035] On the other hand, Figure 2 As shown, the present invention also discloses a method for preparing an LED device, which is used to prepare the above-mentioned LED device, wherein the preparation method comprises the following steps:

[0036] S100: providing a substrate, and bonding the double-sided film to the substrate;

[0037] Specifically, the substrate can be a steel substrate, adhesive is provided on both sides of the double-sided film, the thickness of the double-sided film is 110μm-120μm, and the thickness of the double-sided film is 110μm, 113μm, 116μm, 118μm or 120μm, but not limited to this; the thickness of the adhesive between the double-sided film and the substrate is 23μm-27μm, and the thickness of the adhesive between the double-sided film and the substrate is 23μm, 24μm, 25μm, 26μm or 27μm, but not limited to this; the thickness of the adhesive between the double-sided film and the flip chip is 12μm-17μm, and the thickness of the adhesive between the double-sided film and the flip chip is 12μm-17μm, and the thickness of the double-sided film is 110μm, 113μm, 116μm, 118μm or 120μm, but not limited to this; ...10μm-110μm, and the thickness of the double-sided film is 110μm, 113μm, 116μm, 118μm or 120μm, but The thickness of the adhesive between the double-sided film and the flip chip is 12μm, 13μm, 14μm, 15μm, 16μm or 17μm, but not limited to this; the adhesion between the double-sided film and the flip chip contact surface is 2.5N / mm-15N / mm, and exemplarily, the adhesion between the double-sided film and the flip chip contact surface is 2.5N / mm, 5N / mm, 7.5N / mm, 10N / mm, 12N / mm or 15N / mm, but not limited to this; the angle of the arc glue is adjusted by adjusting the adhesion between the double-sided film and the flip chip contact surface, thereby adjusting the brightness enhancement effect of the LED device.

[0038] S200: Arrange the flip chips in reverse order according to the preset spacing on the double-sided film, and apply glue in a counterclockwise direction along the outer side of the flip chips;

[0039] Specifically, when applying glue, from a top-down perspective, the glue is applied counterclockwise from the left side of the flip chip, and the total amount of glue applied on the outside of a single flip chip is 0.123g / kpcs-0.135g / kpcs. For example, the total amount of glue applied on the outside of a double single flip chip is 0.123g / kpcs, 0.126g / kpcs, 0.129g / kpcs, 0.130g / kpcs, 0.132g / kpcs or 0.135g / kpcs, but not limited thereto. In a specific implementation, by adjusting the amount of glue applied, the accumulation of the colloid on the outside of the flip chip is adjusted, and then the angle of the arc glue is adjusted, so as to adjust the brightness enhancement effect of the LED device.

[0040] S300: placing the flip chip and substrate after applying glue into a baking oven for baking, so that the glue forms an arc glue, and then performing reverse molding;

[0041] Specifically, the flip chip and substrate after glue application are placed in a baking oven for preliminary baking and shaping baking. The temperature of the preliminary baking is 60℃-100℃. Exemplarily, the temperature of the preliminary baking is 60℃, 70℃, 80℃, 90℃ or 100℃, but not limited to this; the baking time of the preliminary baking is 20min-40min. Exemplarily, the baking time of the preliminary baking is 20min, 25min, 30min, 35min or 40min, but not limited to this; the temperature of the shaping baking is 130℃-170℃. Exemplarily, the temperature of the shaping baking is 130℃, 140℃, 150℃, 160℃ or 170℃, but not limited to this; the baking time is 100min-140min. Exemplarily, the baking time of the preliminary baking is 100min, 110min, 120min, 130min or 140min, but not limited to this. In the specific implementation, the temperature and time of the initial baking are adjusted, and the bending condition of the colloid is observed, that is, the curvature angle of the arc-shaped glue is adjusted, so as to adjust the brightness improvement effect of the LED device, and then the curvature angle of the arc-shaped glue is fixed through shaping baking.

[0042] S400: providing a bracket, and placing solder paste on the bracket, transferring the flip chip with arc glue after inverting to the solder paste for reflow soldering;

[0043] Specifically, the bracket can be a cup-shaped bracket, and solder paste is applied on the bracket by steel screen printing or tinning, and then the flip chip with arc glue that has been molded is transferred to the solder paste for reflow soldering. The solder paste alloy used can be SC07 or SnSb10.

[0044] S500: placing a fluorescent sheet on the top of the flip chip and baking it;

[0045] Specifically, a fluorescent sheet is attached to a bracket loaded with a flip chip by adhesive. The outer contour size of the fluorescent sheet is consistent with the outer contour size of the arc glue, and the thickness of the fluorescent sheet is 80μm-100μm. Exemplarily, the thickness of the fluorescent sheet is 80μm, 85μm, 90μm, 95μm or 100μm, but not limited to this. The height of the arc glue is consistent with the height of the flip chip, and the length of the arc glue, that is, the distance from the outermost side of the arc glue to the flip chip, is 250μm-350μm. Exemplarily, the length of the arc glue is 250μm, 275μm, 300μm, 325μm or 350μm, but not limited to this.

[0046] S600: After baking, fill the gaps at the bottom of the bracket and the curved glue of the flip chip with reflective glue.

[0047] Specifically, the reflective adhesive may be white adhesive with a reflectivity of more than 99%. The reflective adhesive fills the gap in the bracket, and the filling height is half of the height of the fluorescent sheet.

[0048] In summary, the LED device and preparation method thereof proposed in the above-mentioned embodiments of the present invention, by arranging arc glue on the outside of the flip chip, allows the light on the side of the flip chip to pass through the arc glue as a light guide channel, be reflected by the reflective glue, and all be emitted by the fluorescent sheet, thereby improving the luminous brightness of the front of the LED device. In addition, by adjusting the curvature of the reflective glue, the effect of the light emitted from the side on improving the luminous brightness of the front of the LED device is adjusted. In addition, the preparation process of this method does not use fluorescent glue, so there will be no problem of peeling of the fluorescent colloid and the bowl-cup type bracket due to the difference in expansion coefficients between the fluorescent glue and the bracket plastic, so that it can be used under more extreme high and low temperature conditions. Therefore, the present invention solves the difficulty in improving the brightness of LED devices in the prior art, and the problem of peeling of the fluorescent glue and the bracket under extreme environments.

[0049] The present invention is further described below with specific embodiments:

[0050] Embodiment 1

[0051] The present embodiment provides an LED device, including a bracket bowl, a flip chip arranged at the bottom of the bracket bowl, a fluorescent sheet located on the top of the flip chip and covering the flip chip, an arc-shaped glue located on the outside of the flip chip and covering the side of the flip chip, and a reflective glue filling the gap in the bracket bowl, wherein the height of the reflective glue is half the height of the fluorescent sheet.

[0052] In this embodiment, the thickness of the fluorescent sheet is 90 μm.

[0053] The method for preparing the LED device in this embodiment comprises the following steps:

[0054] (1) providing a substrate and bonding the double-sided film to the substrate;

[0055] Specifically, the substrate is a steel substrate, the thickness of the double-sided film is 115 μm, the thickness of the adhesive between the double-sided film and the substrate is 25 μm, the thickness of the adhesive on the other side of the double-sided film is 15 μm, and the adhesion between the double-sided film and the flip chip contact surface is 10 N / mm.

[0056] (2) Arrange the flip chips in reverse order on the double-sided film at a preset spacing, and apply glue in a counterclockwise direction along the outer side of the flip chips;

[0057] Specifically, the total adhesive amount on the outer side of a single flip chip is 0.130 g / kpcs.

[0058] (3) placing the flip chip and substrate after applying glue into a baking oven for baking so that the glue forms an arc glue, and then performing reverse molding;

[0059] Specifically, the flip chip and substrate after adhesive application are placed in a baking oven for preliminary baking and final baking. The preliminary baking temperature is 80° C., the preliminary baking time is 30 minutes, the final baking temperature is 150° C., and the final baking time is 120 minutes.

[0060] (4) providing a bracket and applying solder paste on the bracket, transferring the flip chip with arc glue after inverting to the solder paste for reflow soldering;

[0061] Specifically, the bracket is a cup-shaped bracket, solder paste is applied on the bracket by tinning, and then the flip chip with arc glue that has been molded is transferred to the solder paste for reflow soldering, and the solder paste alloy used is SnSb10.

[0062] (5) Placing a fluorescent sheet on top of the flip chip and baking it;

[0063] Specifically, a fluorescent sheet is attached to the bracket loaded with the flip chip by adhesive. The outer contour size of the fluorescent sheet is consistent with the outer contour size of the arc glue, and the thickness of the fluorescent sheet is 90 μm. The height of the arc glue is consistent with the height of the flip chip.

[0064] (6) After baking, fill the gap between the bottom of the bracket and the arc-shaped glue of the flip chip with reflective glue.

[0065] Specifically, the reflective adhesive is white adhesive with a reflectivity of more than 99%. The reflective adhesive fills the gap in the bracket, and the filling height is half of the height of the fluorescent sheet.

[0066] Embodiment 2

[0067] This embodiment also provides an LED device and a method for preparing the same. The difference from the first embodiment is that when the LED device is prepared, the adhesion between the double-sided film and the contact surface of the flip chip is 2.5 N / mm.

[0068] Embodiment 3

[0069] This embodiment also provides an LED device and a method for preparing the same. The difference from the first embodiment is that when the LED device is prepared, the adhesion between the double-sided film and the contact surface of the flip chip is 5N / mm.

[0070] Embodiment 4

[0071] This embodiment also provides an LED device and a method for preparing the same. The difference from the first embodiment is that when the LED device is prepared, the adhesion between the double-sided film and the contact surface of the flip chip is 7.5 N / mm.

[0072] Embodiment 5

[0073] This embodiment also provides an LED device and a method for preparing the same. The difference from the first embodiment is that when the LED device is prepared, the adhesion between the double-sided film and the contact surface of the flip chip is 12.5 N / mm.

[0074] Embodiment 6

[0075] This embodiment also provides an LED device and a method for preparing the same. The difference from the first embodiment is that when the LED device is prepared, the adhesion between the double-sided film and the contact surface of the flip chip is 15 N / mm.

[0076] Embodiment 7

[0077] This embodiment also provides an LED device and a preparation method thereof. The difference from the first embodiment is that when the LED device is prepared, the total amount of adhesive on the outer side of a single flip chip is 0.123 g / kpcs.

[0078] Embodiment 8

[0079] This embodiment also provides an LED device and a preparation method thereof. The difference from the first embodiment is that when the LED device is prepared, the total amount of adhesive on the outside of a single flip chip is 0.126 g / kpcs.

[0080] Embodiment 9

[0081] This embodiment also provides an LED device and a preparation method thereof. The difference from the first embodiment is that when the LED device is prepared, the total amount of adhesive on the outside of a single flip chip is 0.129 g / kpcs.

[0082] Embodiment 10

[0083] This embodiment also provides an LED device and a preparation method thereof. The difference from the first embodiment is that when the LED device is prepared, the total amount of adhesive on the outer side of a single flip chip is 0.132 g / kpcs.

[0084] Embodiment 11

[0085] This embodiment also provides an LED device and a preparation method thereof. The difference from the first embodiment is that when the LED device is prepared, the total amount of adhesive on the outer side of a single flip chip is 0.135 g / kpcs.

[0086] Embodiment 12

[0087] This embodiment also provides an LED device and a preparation method thereof. The difference from the first embodiment is that during the preparation of the LED device, the initial baking temperature is 60°C.

[0088] Embodiment 13

[0089] This embodiment also provides an LED device and a preparation method thereof, which is different from the first embodiment in that, when the LED device is prepared, the initial baking temperature is 100° C.

[0090] Comparative Example 1

[0091] This comparative example provides an LED device and a preparation method thereof, which are prepared by adopting the existing process preparation method of LED devices filled with fluorescent glue.

[0092] In the specific implementation, LED devices are prepared according to the process flow and process parameters defined in the above-mentioned embodiments 1 to 15 and comparative example 1, and the parameters of the prepared LED devices are measured, and the molding time and temperature are counted. In comparative example 1, the results are shown in Table 1:

[0093] Table 1

[0094]

[0095] As can be seen from Table 1, the LED device prepared by the LED device obtained by the method in the embodiment of the present invention does not have the problem of the fluorescent glue peeling off from the bracket due to extreme ambient temperature when the fluorescent glue is not used, and the brightness of the prepared LED device is higher than that of the LED device in the prior art by adopting the process of arc glue and reflective glue, and the brightness is increased by at least 3.9%, which is a huge improvement. According to the first to sixth embodiments, it can be known that if the adhesion of the chip-bonding surface of the double-sided film is too small, the size of the arc glue will be too large and not meet the requirements, and as the adhesion of the chip-bonding surface is increased, the length of the arc glue will gradually decrease, the arc glue curvature will gradually decrease, and the relative brightness improvement percentage of the LED will gradually increase, until the adhesion of the chip-bonding surface exceeds 10N / mm, the relative brightness improvement percentage of the LED begins to gradually decrease, that is, the adhesion of the chip-bonding surface is inversely proportional to the length and curvature of the arc glue, and the adhesion of the chip-bonding surface is normally distributed and correlated with the relative brightness improvement percentage of the LED. According to Example 1 and Example 7 to Example 11, it can be seen that as the amount of cloth glue increases, the length of the arc glue will gradually increase, the curvature of the arc glue will gradually increase, and the relative brightness improvement percentage of the LED will gradually increase, until the amount of cloth glue exceeds 1.3g / kpcs, the relative brightness improvement percentage of the LED begins to gradually decrease, that is, the amount of cloth glue is proportional to the length and curvature of the arc glue, and the adhesion of the chip surface is normally distributed and related to the relative brightness improvement percentage of the LED. From Example 1 and Example 12 to Example 13, it can be seen that as the initial baking temperature increases, the length of the arc glue will gradually decrease, the curvature of the arc glue will gradually decrease, and the relative brightness improvement percentage of the LED will gradually increase, until the amount of cloth glue exceeds 1.3g / kpcs, the relative brightness improvement percentage of the LED begins to gradually decrease, that is, the amount of cloth glue is proportional to the length and curvature of the arc glue, and the adhesion of the chip surface is normally distributed and related to the relative brightness improvement percentage of the LED. That is, the size and curvature of the arc glue and the brightness improvement of the LED device can be adjusted by reasonably adjusting the adhesion of the chip surface, the amount of glue and the initial baking temperature, so that the parameters of the arc glue meet the requirements and the brightness improvement effect of the LED device is optimal.

[0096] In summary, the LED device and preparation method thereof in the embodiment of the present invention, by arranging arc glue on the outside of the flip chip, allows the light on the side of the flip chip to pass through the arc glue as a light guide channel and be reflected by the reflective glue, thereby improving the luminous brightness of the front of the LED device. In addition, by adjusting the curvature of the reflective glue, the effect of the light emitted from the side on improving the luminous brightness of the front of the LED device is adjusted. In addition, the preparation process of this method does not use fluorescent glue, so there will be no problem of peeling of the fluorescent colloid and the bowl-cup type bracket due to the difference in expansion coefficient between the fluorescent glue and the bracket plastic, so that it can be used under more extreme high and low temperature conditions. Therefore, the present invention solves the difficulty in improving the brightness of LED devices in the prior art, and the problem of peeling of the fluorescent glue and the bracket under extreme environments.

[0097] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0098] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. An LED device, characterized in that: It includes a bracket bowl, a flip chip arranged at the bottom of the bracket bowl, an arc glue located on the outside of the flip chip and covering the side of the flip chip, a fluorescent sheet located on the top of the flip chip and covering the flip chip and the arc glue, and a reflective glue filling the gap in the bracket bowl, the height of the reflective glue is between the top height and the bottom height of the fluorescent sheet, the bottom of the arc glue is in an arc shape, the angle between the bottom of the arc glue and the horizontal plane is an arc angle, and the degree of the arc angle is 30°-50°.

2. The LED device according to claim 1, characterized in that: The height of the arc glue is consistent with the height of the flip chip, and the length of the arc glue is 250 μm-350 μm.

3. The LED device according to claim 1, characterized in that: The outer contour size of the fluorescent sheet is consistent with the outer contour size of the arc-shaped glue, and the thickness of the fluorescent sheet is 80 μm-100 μm.

4. The LED device according to claim 1, characterized in that: The adhesion between the arc-shaped glue and the flip chip is 2.5N / mm-15N / mm.

5. A method for preparing an LED device, characterized in that: Used to prepare the LED device according to any one of claims 1 to 4, the preparation method comprising: Providing a substrate, and bonding the double-sided film to the substrate; Arrange the flip chips in reverse order on the double-sided film at a preset spacing, and apply glue in a counterclockwise direction along the outer side of the flip chips; Place the flip chip and substrate after applying glue into a baking oven for baking, so that the glue forms an arc glue, and then perform reverse molding; A bracket is provided, and solder paste is arranged on the bracket, and the flip chip with arc glue after inverting is transferred to the solder paste for reflow soldering; Placing a phosphor sheet on top of the flip chip and baking it; After baking, fill the bottom of the bracket and the gap of the flip chip with curved glue with reflective glue; The included angle between the bottom of the arc-shaped rubber and the horizontal plane is an arc angle, and the arc angle is 30°-50°.

6. The method for preparing an LED device according to claim 5, characterized in that: The adhesion between the double-sided film and the flip chip contact surface is 2.5N / mm-15N / mm.

7. The method for preparing an LED device according to claim 5, characterized in that: The amount of adhesive on the outside of the flip chip is 0.123g / kpcs-0.135g / kpcs.

8. The method for preparing an LED device according to claim 5, characterized in that: The flip chip and substrate after adhesive coating are placed in a baking oven for preliminary baking and final baking. The preliminary baking temperature is 60℃-100℃ and the baking time is 20min-40min.

9. The method for preparing an LED device according to claim 8, characterized in that: The temperature of shaping baking is 130℃-170℃, and the baking time is 100min-140min.

10. The method for preparing an LED device according to claim 6, characterized in that: The thickness of the adhesive on the contact surface of the double-sided film and the flip chip is 12μm-17μm, the thickness of the adhesive on the other side is 23μm-27μm, and the thickness of the double-sided film is 110μm-120μm.

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