Electrooptical element

Abstract

A charged particle optical element for a charged particle optical module configured to guide charged particles along at least one beam path, the charged particle optical element comprising: a substrate comprising at least one aperture for the at least one beam path to pass therethrough; at least one electronic component to provide a component surface of the substrate; and an electrical connector electrically connected to the at least one electronic component and extending through the substrate; wherein the substrate includes a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extends through the thinner portion.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to EP application 22201402.9 filed on October 13, 2022, which is incorporated herein by reference in its entirety. Technical Field

[0003] Embodiments provided herein generally relate to charged particle optical elements, charged particle optical components, charged particle optical modules, charged particle optical devices, charged particle optical apparatuses, and methods for providing electrical connections through a substrate of a charged particle optical element. Background Art

[0004] When manufacturing semiconductor integrated circuit (IC) chips, undesirable pattern defects may occur on substrates (e.g., wafers) or masks during the manufacturing process, thereby reducing yield. Defects may occur due to, for example, optical effects and incidental particles or other processing steps such as deposition of etching, chemical mechanical polishing, etc. Therefore, monitoring the degree of undesirable pattern defects is an important process in manufacturing IC chips. More generally, inspection and / or measurement of the surface of a substrate or other object / material is an important process during and / or after its manufacture.

[0005] Pattern evaluation systems such as pattern inspection tools with charged particle beams have been used to evaluate objects, for example, for detecting pattern defects. These tools typically use electron microscopy techniques, such as scanning electron microscopes (SEMs). In an SEM, a primary electron beam with relatively high energy electrons is targeted at a final deceleration step so as to land on the target with a relatively low landing energy. The electron beam is focused on the target as a detection spot. The interaction between the material structure at the detection spot and the landing electrons from the electron beam causes electrons to be emitted from the surface, such as secondary electrons, backscattered electrons, or Auger electrons, which together can be referred to as signal electrons or more generally as signal particles. The generated secondary electrons can be emitted from the material structure of the target.

[0006] By scanning a primary electron beam as a detection spot on the target surface, secondary electrons can be emitted on the target surface. By collecting these emitted secondary electrons from the target surface, a pattern inspection tool (or device) can obtain an image-like signal representing the characteristics of the material structure of the target surface. In this inspection, the collected secondary electrons are detected by a detector within the device. The detector generates a signal in response to the incidental particles. When an area of ​​the sample is inspected, the signal includes data that is processed to generate an inspection image corresponding to the inspected area of ​​the sample. The image may include pixels. Each pixel may correspond to a portion of the inspected area. Typically, an electron beam inspection device has a single beam and may be referred to as a single-beam SEM. Attempts have been made to introduce multi-electron beam inspection in a device (or "multi-beam tool") that may be referred to as a multi-beam SEM (MBSEM).

[0007] Another application of electron optical devices (or columns) is photolithography. A beam of charged particles reacts with a layer of resist on the surface of a substrate. By controlling the location on the resist layer to which the beam of charged particles is directed, a desired pattern can be generated in the resist.

[0008] Electron-optics may be equipment for generating, irradiating, projecting and / or detecting one or more charged particle beams.The path of the charged particle beam is controlled by electromagnetic fields, ie electrostatic fields and optionally magnetic fields.

[0009] Electrical signals (e.g., power and / or communications) may be transmitted to and / or from electronic components of an electron-optical device, for example to operate a charged particle beam and / or process collected electronic signals. Space constraints within an electron-optical device may make it difficult to provide electrical connections. Summary of the invention

[0010] The present invention provides a suitable structure to achieve improved electrical connection of electronic components.

[0011] According to a first aspect of the present invention, there is provided a charged particle optical element for a charged particle optical module, the charged particle optical module being configured to guide charged particles along at least one beam path, the charged particle optical element comprising: a substrate comprising at least one hole for at least one beam path to pass therethrough; at least one electronic component to provide a component surface of the substrate; and an electrical connector electrically connected to the at least one electronic component and extending through the substrate; wherein the substrate comprises a thicker portion and a thinner portion thinner than the thicker portion, and the electrical connector extends through the thinner portion.

[0012] According to a second aspect of the invention, there is provided a method for providing an electrical connection through a substrate of a charged particle optical element for a charged particle optical module, the charged particle optical module being configured to guide charged particles along at least one beam path, the at least one beam path extending through at least one aperture through the substrate, the at least one aperture being used for at least one beam path to pass therethrough, the method comprising: extending an electrical connector through a portion of the substrate having a component surface provided by at least one electronic component, such that the electrical connector is electrically connected to the at least one electronic component; wherein the substrate comprises at least one aperture for at least one beam path to pass therethrough, the substrate comprising a thicker portion and a thinner portion, the thinner portion being thinner than the thicker portion in a direction parallel to the at least one beam path, and the electrical connector extending through the thinner portion.

[0013] According to a third aspect of the invention, there is provided a method for providing an electrical connection through a substrate of a charged particle optical element for a charged particle optical module, the charged particle optical module being configured to guide charged particles along at least one beam path, the at least one beam path extending through the substrate at at least one hole, the at least one hole being used for at least one beam path to pass therethrough, the method comprising: extending an electrical connector through a portion of the substrate having a component surface provided by at least one electronic component so that the electrical connector is electrically connected to the at least one electronic component; and defining at least one hole through the substrate for at least one beam path to pass therethrough, wherein the substrate comprises a thicker portion and a thinner portion, the thinner portion being thinner than the thicker portion in a direction parallel to the at least one beam path, and the electrical connector extending through the thinner portion.

[0014] Advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which certain embodiments of the invention are set forth by way of illustration and example. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and other aspects of the present disclosure will become more apparent through the description of exemplary embodiments with reference to the attached drawings.

[0016] Figure 1 is a schematic diagram illustrating an exemplary electron beam evaluation apparatus.

[0017] Figure 2 is shown as Figure 1 Schematic diagram of an exemplary multi-beam electron optical setup of a portion of an exemplary electron beam evaluation apparatus.

[0018] Figure 3 is a schematic diagram of an exemplary electron optical device including an array of collimator elements and an array of scanning deflectors, the scanning deflector array being Figure 1 A portion of an exemplary electron beam evaluation apparatus.

[0019] Figure 4 Yes Figure 3 Schematic diagram of an exemplary electron-optical device array of an electron-optical device.

[0020] Figure 5 As Figure 1 Schematic diagram of an alternative exemplary electron optical arrangement of a portion of an exemplary electron beam evaluation apparatus.

[0021] Figure 6 It can be used as Figure 3 , Figure 4 and Figure 5 Schematic diagram of an exemplary electron-optical module of a portion of an electron-optical apparatus.

[0022] Figure 7 is a schematic diagram of an exemplary electron-optical element.

[0023] Figure 8 is a schematic diagram of an exemplary electron-optical element.

[0024] Fig. 9 is a schematic diagram of an exemplary electron-optical element.

[0025] Fig.10 is a schematic plan view of an exemplary electron-optical element.

[0026] Fig.11 is a schematic plan view of an exemplary electron-optical element.

[0027] Figure 12-Figure 15 Is manufacturing Figure 8 Schematic representation of the different stages of an exemplary method of electron optics.

[0028] Figure 16-18 Is manufacturing Figure 8 Schematic representation of the different stages of an exemplary method of electron optics.

[0029] Reference will now be made in detail to exemplary embodiments, examples of which are shown in the accompanying drawings. The following description refers to the accompanying drawings, in which the same numbers in different drawings represent the same or similar elements unless otherwise specified. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations consistent with the present invention. Instead, they are merely examples of devices and methods consistent with aspects related to the present invention described in the appended claims. DETAILED DESCRIPTION

[0030] The reduction in the physical size of the device and the enhancement of the computing power of the electronic device can be achieved by significantly increasing the packaging density of circuit components such as transistors, capacitors, diodes, etc. on the IC chip. This can be achieved by increasing the resolution, so that smaller structures can be manufactured. Semiconductor IC manufacturing is a complex and time-consuming process with hundreds of individual steps. Errors in any step of the process of manufacturing IC chips are likely to adversely affect the function of the final product. Only one defect may cause the device to fail. It is hoped to increase the overall yield of the process. For example, in order to obtain a 75% yield for a 50-step process (one of which can indicate the number of layers formed on the wafer), each individual step must have a yield greater than 99.4%. If each individual step has a yield of 95%, the total process yield will be as low as 7%-8%.

[0031] It is also desirable to maintain high substrate (i.e., wafer) throughput (which is defined as the number of substrates processed per hour). High process yield and high substrate throughput may also be affected by the presence of defects. This is especially true if operator intervention is required to review the defect. Therefore, high throughput detection and identification of micro- and nano-scale defects by inspection systems such as scanning electron microscopes ("SEMs") is important to maintain high yield and low cost.

[0032] The scanning electron microscope comprises a scanning device and a detector device. The scanning device comprises an illumination device and a projection device, the illumination device comprising an electron source for generating primary electrons, and the projection device for scanning a target such as a substrate using one or more focused beams of primary electrons. The primary electrons interact with the target and generate interaction products, such as signal particles, such as secondary electrons and / or backscattered electrons. It can be considered that the secondary electrons have an energy of up to 50eV. Although the backscattered electrons have an energy spectrum from substantially zero to the maximum energy of the charged particle device, they are generally set to electrons (or signal electrons) with an energy exceeding 50eV. When the target is scanned, the detection device captures the signal particles (such as secondary electrons and / or backscattered electrons) from the target so that the scanning electron microscope can create an image of the scanning area of ​​the target. The design of the electron optical device that embodies these scanning electron microscope features can have a single beam. For higher throughput such as for evaluation, some designs of the device use multiple focused beams of primary electrons, i.e., multi-beams. The component beams in the multi-beams can be referred to as sub-beams or beamlets. Multi-beams can scan different parts of the target simultaneously. Thus, a multi-beam inspection apparatus can inspect an object at a much higher speed than a single-beam inspection device, such as by moving the object at a higher speed.

[0033] In a multi-beam evaluation device, the paths of some primary electron beams deviate from the central axis of the scanning device, i.e., the midpoint of the primary electron optical axis (also referred to herein as the charged particle axis). In order to ensure that all electron beams arrive at the sample surface at substantially the same angle of incidence, it is necessary to manipulate the beamlet paths having a greater radial distance from the central axis to move through a greater angle than the beamlet paths having paths closer to the central axis. This stronger manipulation may result in aberrations that cause the resulting image to be blurred and out of focus. An example is spherical aberration, which brings the focus of each beamlet path into a different focal plane. In particular, for beamlet paths that are not on the central axis, the change in the focal plane in the beamlet is greater with radial displacement from the central axis. When signal particles (e.g., secondary electrons) from the target are detected, such aberrations and defocusing effects may remain associated with the signal particles (e.g., secondary electrons) from the target, for example, will affect the shape and size of the spot formed by the beamlet on the target. Therefore, such aberrations reduce the quality of the resulting image created during the evaluation.

[0034] A known implementation of a multi-beam evaluation device is described below.

[0035] The accompanying drawings are schematic. Therefore, for the sake of clarity, the relative sizes of the components in the accompanying drawings are exaggerated. In the following description of the drawings, the same or similar reference numerals refer to the same or similar components or entities, and only the differences with respect to the various embodiments are described. Although the description and drawings relate to electronic optical devices, it is to be understood that the embodiments are not intended to limit the present disclosure to specific charged particles. Therefore, references to electrons and items referred to by reference to electrons throughout this article can be more generally considered as references to charged particles and items referred to by reference to charged particles, wherein the charged particles are not necessarily electrons.

[0036] Reference now Figure 1 , Figure 1 is a schematic diagram illustrating an exemplary charged particle beam evaluation apparatus 100 or inspection apparatus. Figure 1 The evaluation apparatus 100 includes a vacuum chamber 10, a load lock chamber 20, an electron optical device, an equipment front end module (EFEM) 30, and a controller 50. An electron optical device 40 is positioned within the vacuum chamber 10. The electron optical device may include an electron optical device 40 (also referred to as an electron optical device, an electron beam device, or an electron beam device) and a motorized or actuated stage.

[0037] The EFEM 30 includes a first feed port 30a and a second feed port 30b. The EFEM 30 may include (one or more) additional feed ports. The first feed port 30a and the second feed port 30b may, for example, accommodate a substrate front opening pod (FOUP) containing a substrate to be evaluated (e.g., a semiconductor substrate or a substrate made of (one or more) other materials) or a target (substrate, wafer, and sample are collectively referred to as "target" hereinafter). One or more robotic arms (not shown) in the EFEM 30 transport the target to the load lock chamber 20.

[0038] The load lock chamber 20 is used to remove the gas around the target. This creates a vacuum with a local gas pressure lower than the pressure in the surrounding environment. The load lock chamber 20 can be connected to a load lock vacuum pump system (not shown), which removes gas particles in the load lock chamber 20. The operation of the load lock vacuum pump system enables the load lock chamber to reach a first pressure lower than atmospheric pressure. The main chamber 10 is connected to the main chamber vacuum pump system (not shown). The main chamber vacuum pump system removes gas molecules in the main chamber 10 so that the pressure around the target reaches a second pressure lower than the first pressure. After reaching the second pressure, the target is transported to the electron optical device 40, and the target can be evaluated by the electron optical device 40. The electron optical device 40 may include a single beam or multi-beam electron optical device.

[0039] The controller 50 is electronically connected to the electron optical device 40. The controller 50 may be a processor (such as a computer) configured to control the charged particle beam evaluation device 100. The controller 50 may also include processing circuitry configured to perform various signal and image processing functions. Figure 1 30, but it is understood that the controller 50 can be part of the structure. The controller 50 can be located in one of the components of the charged particle beam evaluation device, or it can be distributed over at least two components. Although the present disclosure provides an example of a main chamber 10 that houses an electron beam evaluation device, it should be noted that the broadest aspects of the present disclosure are not limited to chambers that house electron optical devices. On the contrary, it is understood that the aforementioned principles can also be applied to other devices and other equipment arrangements that operate at a second pressure.

[0040] Now refer to Figure 2 , Figure 2 Is the evaluation device (e.g. Figure 1Schematic diagram of an exemplary multi-beam electron optical device 40 for an evaluation device 100 of Apple (Apple device 100). In an alternative embodiment, the Apple device 100 is a single-beam evaluation device. The electron optical device 40 may include an electron source 201, a beam former array 372 (also known as a gun hole plate, a Coulomb hole array, or a pre-sub-beamforming aperture array), a focusing lens 310, a source converter (or micro-optical array) 320, an objective lens 331, and a target 308. In one embodiment, the focusing lens 310 is magnetic. (A single-beam evaluation device may have the same characteristics as a multi-beam evaluation device, but the electron optical components of the array apertures 372, 320 may have a single hole. The source converter 320 may be replaced by multiple electron optical components along the beam path.) The target 308 may be supported by a support on a stage. The stage may be motorized. The stage moves so that the incident electrons scan the target 308. The electron source 201, the beam former array 372, and the focusing lens 310 may be components of an illumination device included in the electron optical device 40. The source converter 320 (also referred to as a source conversion unit) and the objective lens 331 , which will be described in more detail below, may be components of a projection device comprised by the electro-optical arrangement 40 .

[0041] The electron source 201, the former array 372, the optical lens 310, the source converter 320 and the objective lens 331 are aligned with the primary electron optical axis 304 of the electron optical device 40. The electron source 201 can generate a primary beam 302 substantially along the electron optical axis 304 and having a source crossover (virtual or real) 301S. During operation, the electron source 201 is configured to emit electrons. The electrons are extracted or accelerated by the extractor and / or the anode to form the primary beam 302.

[0042] The beam former array 372 cuts the peripheral electrons of the primary electron beam 302 to reduce the resulting Coulomb effect. The primary electron beam 302 can be trimmed into a specified number of sub-beams, such as three sub-beams 311, 312 and 313, by the beam former array 372. It should be understood that the description is intended to apply to an electron optical device 40 having any number of sub-beams (e.g., one, two or more than three). In operation, the beam former array 372 is configured to block peripheral electrons to reduce the Coulomb effect. The Coulomb effect can enlarge the size of each detection spot 391, 392, 393, thereby reducing the evaluation resolution. The beam former array 372 reduces the aberrations caused by the Coulomb interaction between the electrons projected in the beam. The beam former array 372 may include a plurality of openings for further generating primary sub-beams before the source converter 320.

[0043] Source converter 320 is configured to convert the beam (including beamlets, if any) emitted by beamformer array 372 into beamlets that are projected toward target 308. In one embodiment, source converter is a unit. Alternatively, the term source converter may simply be used as a collective term for a group of components that form a beam from beamlets.

[0044] like Figure 2 As shown, in one embodiment, the electron optical device 40 includes a beam limiting aperture array 321 having an aperture pattern (i.e., apertures arranged in an array) configured to define the outer dimensions of a beam (or beamlet) projected toward the target 308. In one embodiment, the beam limiting aperture array 321 is part of the source converter 320. In an alternative embodiment, the beam limiting aperture array 321 is part of the system uplink beam of the master device. In one embodiment, the beam limiting aperture array 321 divides one or more beamlets 311, 312, 313 into beamlets such that the number of beamlets projected toward the target 308 is greater than the number of beamlets transmitted through the beam former array 372. In an alternative embodiment, the beam limiting aperture array 321 maintains the number of beamlets incident on the beam limiting aperture array 321, in which case the number of beamlets may be equal to the number of beamlets projected toward the target 308.

[0045] like Figure 2 As shown, in one embodiment, the electron optical device 40 includes a pre-bend deflector array 323 having pre-bend deflectors 323_1, 323_2 and 323_3 to respectively bend the beamlets 311, 312 and 313. The pre-bend deflectors 323_1, 323_2 and 323_3 can bend the paths of the beamlets 311, 312 and 313 onto the beam limiting aperture array 321.

[0046] The electron optical device 40 may also include an image forming element array 322 having imaging deflectors 322_1, 322_2 and 322_3. There are corresponding deflectors 322_1, 322_2 and 322_3 associated with the path of each beam wave. The deflectors 322_1, 322_2 and 322_3 are configured to deflect the path of the beam wave toward the electron optical axis 304. The deflected beam wave forms a virtual image (not shown) of the source intersection 301S. In the current embodiment, these virtual images are projected onto the target 308 through the objective lens 331 and form detection spots 391, 392, 393 thereon. The electron optical device 40 may also include an aberration compensator array 324, which is configured to compensate for the aberrations that may exist in each sub-beam. In one embodiment, the aberration compensator array 324 includes a lens configured to operate on each beam wave. The lens may take the form of a lens array. The lenses in the array may operate on different sub-beams of multiple beams. The aberration compensator array 324 may, for example, include a field curvature compensator array (not shown), for example, having microlenses. For example, the field curvature compensator and the microlenses may be configured to compensate the individual beamlets for field curvature aberrations evident in the detection spots 391, 392, and 393. The aberration compensator array 324 may include an astigmatism compensator array (not shown) having a micro-astigmatism corrector. For example, the micro-astigmatism corrector may be controlled to operate on the beamlets to compensate for astigmatism aberrations that would otherwise be present in the detection spots 391, 392, and 393.

[0047] The source converter 320 may further include a pre-bend deflector array 323 having pre-bend deflectors 323_1, 323_2, and 323_3 to bend the beamlets 311, 312, and 313, respectively. The pre-bend deflectors 323_1, 323_2, and 323_3 may bend the paths of the beamlets onto the beam limiting aperture array 321. In one embodiment, the pre-bend micro deflector array 323 may be configured to bend the beamlet paths of the beamlets toward an orthogonal direction to the plane of the beam limiting aperture array 321. In another embodiment, the condenser lens 310 may adjust the path directions of the beamlets onto the beam limiting aperture array 321. For example, the condenser lens 310 may focus (collimate) the three sub-beams 311, 312, and 313 to become substantially parallel beams along the primary electron optical axis 304, so that the three sub-beams 311, 312, and 313 are substantially perpendicularly incident on the source converter 320, which may correspond to the beam limiting aperture array 321. In such an alternative embodiment, the pre-bending deflector array 323 may not be necessary.

[0048] The image forming element array 322, the aberration compensator array 324 and the pre-bend deflector array 323 may include multiple layers of beamlet steering devices, some of which may be in the form of arrays, such as micro-deflectors, micro-lenses or micro-astigmatism correctors. The beam path may be rotationally steered. Rotational correction may be applied by magnetic lenses. Rotational correction may be additionally or alternatively achieved by existing magnetic lenses such as focusing lens devices.

[0049] In the present example of the electron optical device 40, the beams are deflected toward the electron optical axis 304 by deflectors 322_1, 322_2 and 322_3 of the image forming element array 322, respectively. It should be understood that the beam paths may have corresponded to the electron optical axis 304 before reaching the deflectors 322_1, 322_2 and 322_3.

[0050] The objective lens 331 focuses the beam onto the surface of the target 308, i.e., it projects three virtual images onto the target surface. The three images formed by the three sub-beams 311 to 313 on the target surface form three detection spots 391, 392 and 393 thereon. In one embodiment, the deflection angles of the sub-beams 311 to 313 are adjusted to pass through or approach the front focus of the objective lens 331, thereby reducing or limiting the off-axis aberrations of the three detection spots 391 to 393. In one arrangement, the objective lens 331 is magnetic. Although three beams are mentioned, this is only by way of example. There may be any number of beams.

[0051] The manipulator is configured to manipulate one or more charged particle beams. The term manipulator includes a deflector, a lens, and an aperture. The pre-bent deflector array 323, the aberration compensator array 324, and the image forming element array 322 can be individually or in combination with each other referred to as a manipulator array because they manipulate one or more sub-beams or beam waves of charged particles. The lenses and deflectors 322_1, 322_2, and 322_3 can be referred to as manipulators because they manipulate one or more sub-beams or beam waves of charged particles.

[0052] In one embodiment, a beam splitter (not shown) is provided. The beam splitter may be downstream of the source converter 320. For example, the beam splitter may be a Wien filter including an electrostatic dipole field and a magnetic dipole field. The beam splitter may be upstream of the objective lens 331. The beam splitter may be positioned between adjacent portions of the shield along the direction of the beam path (described in more detail below). The inner surface of the shield may be radially inward of the beam splitter. Alternatively, the beam splitter may be within the shield. In operation, the beam splitter may be configured to apply an electrostatic force through an electrostatic dipole field on each electron of a sub-beam. In one embodiment, the electrostatic force is equal in magnitude but opposite in direction to the magnetic force applied to each primary electron of the sub-beam by the magnetic dipole field of the beam splitter. The sub-beam may therefore pass through the beam splitter at least substantially straight with at least substantially zero deflection angle. The direction of the magnetic force depends on the direction of motion of the electron, while the direction of the electrostatic force does not depend on the direction of motion of the electron. Therefore, because secondary electrons and backscattered electrons (or signal electrons) generally move in the opposite direction to primary electrons, the magnetic force exerted on the secondary electrons and backscattered electrons (or signal particles) will no longer offset the electrostatic force, and as a result, the secondary electrons and backscattered electrons moving through the beam splitter will deviate from the electron optical axis 304.

[0053] In one embodiment, a secondary device (not shown) is provided that includes a detection element for detecting a corresponding secondary charged particle beam. When the secondary beam is incident on the detection element, these elements can generate a corresponding intensity signal output. The output can be directed to an image processing system (e.g., controller 50). Each detection element can include an array in the form of a grid. The array can have one or more pixels; each pixel can correspond to an element of the array. The intensity signal output of the detection element can be the sum of the signals generated by all pixels in the detection element.

[0054] In one embodiment, a secondary projection device and its associated electronic detection device (not shown) are provided. The secondary projection device and its associated electronic detection device can be aligned with the secondary electron optical axis of the secondary device. In one embodiment, a beam splitter is arranged to deflect the path of the secondary electron beam toward the secondary projection device. The secondary projection device then focuses the path of the secondary electron beam onto multiple detection areas of the electronic detection device. The secondary projection device and its associated electronic detection device can use secondary electrons or backscattered electrons (or signal particles) to register and generate an image of the target 308.

[0055] Such Wien filter, secondary device and / or secondary projection device can be arranged in a single beam evaluation device. Additionally and / or alternatively, the detection device can be present in the beam downstream of the objective lens, for example facing the target during operation. In an alternative arrangement, the detector device is positioned along the path of the charged particle beam towards the target. In this arrangement, there is no Wien filter, secondary device and secondary projection device. The detection device can be positioned at one or more positions along the path of the charged particle beam towards the target, for example facing the sample during operation, for example around the path of the charged particle beam. Such detector device can have a hole and can be annular. Different detector devices can be positioned along the path of the charged particles to detect signal particles with different characteristics. The electron optical element along the path of the charged particle beam can include one or more electrostatic plates with holes for the path of the charged particle beam, and the electron optical element can be arranged and controlled to focus the signal particles with different corresponding characteristics to the corresponding detector devices at different positions along the path of the charged particle beam. Such electrostatic plates can be arranged in series with two or more adjacent plates along the path of the charged particle beam.

[0056] In one embodiment, evaluation device 100 includes a single source.

[0057] Within the electron-optical device, any element or collection of elements may be replaceable or field replaceable. One or more electron-optical components in the electron-optical device, especially those that operate on or generate beamlets, such as aperture arrays and manipulator arrays, may include one or more micro-electromechanical systems (MEMS). The pre-bent deflector array 323 may be a MEMS. MEMS are miniaturized mechanical and electromechanical components manufactured using microfabrication techniques. In one embodiment, the electron-optical device 40 includes apertures, lenses, and deflectors formed as MEMS. In one embodiment, manipulators such as lenses and deflectors 322_1, 322_2, and 322_3 are controllable, passive, active, as an entire array, individually, or in groups within an array, so as to control the beam wave of charged particles projected toward the target 308.

[0058] In one embodiment, the electron-optical device 40 may include replaceable and / or additional components in the charged particle path, such as lenses and other components, some of which have been previously described with reference to FIG. Figure 1 and Figure 2 Described in Figure 3 and Figure 4An example of such an arrangement is shown in , which will be described in further detail later. Specifically, an embodiment includes an electron optical device 40 that divides a charged particle beam from a source into a plurality of sub-beams. A plurality of corresponding objective lenses can project the sub-beams onto a sample. In some embodiments, a plurality of condenser lenses are provided upstream of the objective lens. The condenser lens focuses each sub-beam upstream of the intermediate focus of the objective lens. In some embodiments, a collimator is provided upstream of the objective lens. A corrector can be provided to reduce focus errors and / or aberrations. In some embodiments, such a corrector is integrated into the objective lens or positioned directly adjacent to the objective lens. In the case of providing a condenser lens, such a corrector can be additionally or alternatively integrated into the condenser lens or positioned directly adjacent to the condenser lens and / or positioned in the intermediate focus or positioned directly adjacent to the intermediate focus. A detector is provided to detect charged particles emitted by the sample. The detector can be integrated into the objective lens. The detector can be on the bottom surface of the objective lens so as to face the sample in use. The detector can include, for example, an array of detector elements, which can correspond to an array of beam waves of a multi-beam arrangement. The detectors (or detector elements) in the detector array may generate detection signals associated with pixels of the generated image.The condenser lens, the objective lens and / or the detectors may be formed as MEMS or CMOS devices.

[0059] Figure 3 is a schematic diagram of another design of an exemplary electron-optical device 40. The electron-optical device 40 may include a source 201 and one or more electron-optical components. Alternatively, an electron-optical apparatus including the electron-optical device 40 may include the source 201. The electron-optical device 40 may include an upper beam limiter 252, a collimator element array 271, a control lens array 250, a scanning deflector array 260, an objective lens array 241, a beam shaping limiter 242, and a detector array. The source 201 provides a charged particle beam (e.g., electrons). The multiple beams focused on the sample 208 are derived from the beam provided by the source 201. Beamlets can be derived from the beam, for example, using a beam limiter that defines an array of beam-limiting holes. The source 201 is desirably a high-brightness thermal field emitter that has a good compromise between brightness and total emission current.

[0060] The upper beam limiter 252 defines a beam limiting aperture array. The upper beam limiter 252 may be referred to as an upper beam limiting aperture array or an upstream limiting aperture array. The upper beam limiter 252 may include a plate (which may be a plate-like body) having a plurality of apertures. The upper beam limiter 252 forms a beamlet from the charged particle beam emitted by the source 201. Portions of the beam other than those that contribute to forming the beamlet may be blocked (e.g., absorbed) by the upper beam limiter 252 so as not to interfere with downstream beamlets. The upper beam limiter 252 may be referred to as a beamlet defining an aperture array.

[0061] The collimator element array 271 is disposed downstream of the upper beam limiter. Each collimator element collimates a corresponding sub-beam. The collimator element array 271 can be formed using MEMS manufacturing technology so as to be compact in space. In some embodiments, as shown in FIG. Figure 3 As shown, the collimator element array 271 is the first deflection or focusing electron optical array element downstream of the beam path of the source 201. In another arrangement, the collimator can be in the form of a macro-collimator in whole or in part. Such a macro-collimator can be upstream of the upper beam limiter 252, so that it operates on the beam from the source before generating multiple beams. A magnetic lens can be used as a macro-collimator.

[0062] Downstream of the collimator element array is a control lens array 250. The control lens array 250 includes a plurality of control lenses. Each control lens includes at least two electrodes (e.g., two or three electrodes) connected to a corresponding potential source. The control lens array 250 may include two or more (e.g., three) flat plate electrode arrays connected to a corresponding potential source. The control lens array 250 is associated with the objective lens array 241 (e.g., the two arrays are positioned close to each other and / or mechanically connected to each other and / or controlled together as a unit). The control lens array 250 is positioned upstream of the objective lens array 241. The control lenses pre-focus the beamlets (e.g., apply a focusing action to the beamlets before the beamlets reach the objective lens array 241). Pre-focusing can reduce the divergence of the beamlets or increase the convergence rate of the beamlets.

[0063] As described above, the control lens array 250 is associated with the objective lens array 241. As described above, the control lens array 250 can be considered as providing electrodes in addition to the electrodes 242, 243 of the objective lens array 241, for example as part of the objective lens array assembly. The additional electrodes of the control lens array 250 allow for more degrees of freedom for controlling the electron optical parameters of the beamlets. In one embodiment, the control lens array 250 can be considered as an additional electrode of the objective lens array 241, thereby realizing additional functions of the individual objective lenses of the objective lens array 241. In one configuration, such electrodes can be considered as part of the objective lens array that provides additional functions for the objective lenses of the objective lens array 241. In such an arrangement, the control lens is considered to be part of the corresponding objective lens, even to the extent that the control lens is only referred to as part of the objective lens, for example in terms of providing one or more additional degrees of freedom to the objective lens. Although the control lens array 241 may be indistinct from the objective lens array 250 and is part of the objective lens array 250, in this specification, the control lens array 250 is considered to be different and separate from the objective lens array 241.

[0064] For ease of illustration, the lens array is schematically described here using an array of ellipses. Each ellipse represents a lens in the lens array. The shape of an ellipse is conventionally used to represent a lens, similar to the biconvex shape often used in optical lenses. However, in the context of charged particle arrangements such as discussed here, it should be understood that the lens array will typically operate in an electrostatic manner, and therefore any physical elements that adopt biconvex shapes may not be required. As mentioned above, the lens array may alternatively include a plurality of plates with holes.

[0065] A scanning deflector array 260 including a plurality of scanning deflectors may be provided. The scanning deflector array 260 may be formed using MEMS manufacturing techniques. Each scanning deflector scans a respective beamlet over the sample 208. Thus, the scanning deflector array 260 may include a scanning deflector for each beamlet. Each scanning deflector may deflect the beamlet in one direction (e.g., parallel to a single axis, such as the X-axis) or in two directions (e.g., relative to two non-parallel axes, such as the X-axis and the Y-axis). The deflection causes the beamlet to be scanned across the sample 208 in one or two directions (i.e., one or two dimensions). In one embodiment, the scanning deflector described in EP 2425444 may be used to implement the scanning deflector array 260, which document is hereby incorporated by reference as a whole with particular regard to the scanning deflector. The scanning deflector array 260 (e.g., formed using MEMS manufacturing techniques as described above) may be more compact in space than a macro scanning deflector. In another arrangement, a macro scanning deflector may be used upstream of the upper beam limiter 252. Its function may be similar or identical to a scanning deflector array, although it manipulates the beams from the source before generating beam waves of multiple beams.

[0066] An objective lens array 241 including a plurality of objective lenses is provided to direct the sub-beams onto the sample 208. Each objective lens includes at least two electrodes (e.g., two or three electrodes) connected to a corresponding potential source. The objective lens array 241 may include two or more (e.g., three) flat electrode arrays connected to a corresponding potential source. Each objective lens formed by the flat electrode array may be a microlens operating on a different sub-beam. Each plate defines a plurality of holes (also referred to as holes). The position of each hole in a plate corresponds to the position of a corresponding hole (or holes) in another plate (or plates). The corresponding holes define the objective lens, so that each group of corresponding holes operates on the same sub-beam in the multiple beams in use. Each objective lens projects a corresponding sub-beam of the multiple beams onto the sample 208.

[0067] An objective lens array 241 having only two electrodes can have lower aberrations than an objective lens array 241 having more electrodes. A three-electrode objective lens can have a larger potential difference between the electrodes, thereby enabling a stronger lens. Additional electrodes (i.e., more than two electrodes) provide additional degrees of freedom for controlling electron trajectories, such as focusing secondary electrons as well as the incident beam. Such additional electrodes can be considered to form a control lens array 250. The benefit of a two-electrode lens over a single lens is that the energy of the incident beam does not have to be the same as the outgoing beam. Advantageously, the potential difference on such a two-electrode lens array enables it to be used as an acceleration or deceleration lens array.

[0068] The objective lens array may form part of an objective lens array assembly together with any or all of the scanning deflector array 260, the control lens array 250, and the collimator element array 271. The objective lens array assembly may also include a beam shaping limiter 242. The beam shaping limiter 242 defines a beam limiting aperture array. The beam shaping limiter 242 may be referred to as a lower beam limiter, a lower beam limiting aperture array, or a final beam limiting aperture array. The beam shaping limiter 242 may include a plate (which may be a plate-like body) having a plurality of apertures. The beam shaping limiter 242 is downstream from at least one electrode (optionally from all electrodes) of the control lens array 250. In some embodiments, the beam shaping limiter 242 is downstream from at least one electrode (optionally from all electrodes) of the objective lens array 241.

[0069] In one arrangement, the beam shaping limiter 242 is structurally integrated with the electrode 302 of the objective lens array 241. Desirably, the beam shaping limiter 242 is positioned in an area of ​​low electrostatic field strength. Each beam limiting aperture is aligned with a corresponding objective lens in the objective lens array 241. The alignment is such that a portion of a beamlet from the corresponding objective lens can pass through the beam limiting aperture and impinge on the sample 208. The aperture of the beam shaping limiter 242 may have a smaller diameter than an aperture of at least one of the objective lens array 241, the control lens array 250, the detector array 240, and the upper beam limiter array 252. Each beam limiting aperture has a beam limiting effect, allowing only a selected portion of the beamlets incident on the beam shaping limiter 242 to pass through the beam limiting aperture. The selected portion may be such that only a portion of the corresponding beamlet that passes through the central portion of each aperture in the objective lens array reaches the sample. The central portion may have a circular cross-section and / or be centered on the beam axis of the beamlet.

[0070] In one embodiment, the electronic optical device 40 is configured to control the objective lens array assembly (e.g., by controlling the potential applied to the electrodes of the control lens array 250) so that the focal length of the control lens is greater than the spacing between the control lens array 250 and the objective lens array 241. The control lens array 250 and the objective lens array 241 can therefore be positioned relatively close together, and the focusing action from the control lens array 250 is too weak to form an intermediate focus between the control lens array 250 and the objective lens array 241. The control lens array and the objective lens array operate together to obtain a combined focal length to the same surface. Combined operation without an intermediate focus can reduce the risk of aberrations. In other embodiments, the objective lens array assembly can be configured to form an intermediate focus between the control lens array 250 and the objective lens array 241.

[0071] A power source may be provided to apply corresponding potentials to electrodes of the control lenses of the control lens array 250 and the objective lenses of the objective lens array 241 .

[0072] In addition to the objective lens array 241, providing a control lens array 250 also provides additional degrees of freedom for controlling the characteristics of the sub-beams. Even when the control lens array 250 and the objective lens array 241 are provided relatively close together, for example, so that no intermediate focus is formed between the control lens array 250 and the objective lens array 241, additional degrees of freedom are provided. The control lens array 250 can be used to optimize the beam opening angle relative to beam demagnification and / or control the beam energy delivered to the objective lens array 241. The control lens may include two or three or more electrodes. If there are two electrodes, the demagnification and landing energy are controlled together. If there are three or more electrodes, the demagnification and landing energy can be controlled independently. Note that the most downstream electrode of the control lens array 250 can be the most upstream electrode of the objective lens array 241. That is, the control lens array 250 and the objective lens array 241 can share electrodes. The shared electrodes provide different lens effects for each lens, each lens being implemented relative to one of its two opposing surfaces (i.e., the upstream surface and the downstream surface). The control lens can therefore be configured to adjust the reduction and / or beam opening angle of each sub-beam and / or the landing energy on the substrate (e.g., using a power supply to apply appropriate corresponding potentials to the electrodes of the control lens and the objective lens). This optimization can be achieved without excessively negatively affecting the number of objective lenses and without excessively worsening the aberrations of the objective lens (e.g., without reducing the strength of the objective lens). The use of the control lens array enables the objective lens array to operate at its optimal electric field strength. Note that references to reduction and opening angle refer to variations of the same parameter. In an ideal arrangement, the product of the range of reduction and the corresponding opening angle is constant. However, the opening angle may be affected by the use of apertures.

[0073] In one embodiment, the landing energy can be controlled to a desired value within a predetermined range, for example from 1000 eV to 5000 eV. Desirably, the landing energy is changed primarily by controlling the energy of the electrons leaving the control lens. The potential difference within the objective lens is preferably kept constant during this change so that the electric field within the objective lens remains as high as possible. In addition, the potential applied to the control lens can be used to optimize the beam opening angle and the reduction. Taking into account the change in the landing energy, the control lens can play a role in changing the reduction. Desirably, each control lens includes three electrodes to provide two independent control variables. For example, one electrode can be used to control the magnification, while a different electrode can be used to independently control the landing energy. Alternatively, each control lens can have only two electrodes. When there are only two electrodes, one of the electrodes may need to control both the magnification and the landing energy.

[0074] A detector array (not shown) is provided to detect charged particles emitted from the sample 208. The detected charged particles may include any charged particles (e.g., signal particles) detected by a scanning electron microscope, including secondary electrons (e.g., emitted) and / or backscattered electrons from the sample 208. The detector may be an array providing a surface of the electron-optical device facing the sample 208 (e.g., the bottom surface of the electron-optical device). Alternatively, the detector array is upstream of the bottom surface, or upstream of, for example, an objective lens array or a control lens array. The elements of the detector array may correspond to beam waves of a multi-beam arrangement. The signal generated by detecting electrons by the elements of the array is transmitted to a processor for generating an image. The signal may correspond to a pixel of an image.

[0075] In other embodiments, a macro-scanning deflector and a scanning deflector array 260 are provided. In this arrangement, scanning of the beamlets over the sample surface can be achieved by controlling the macro-scanning deflector and the scanning deflector array 260 together, preferably synchronously.

[0076] In one embodiment, Figure 4As shown, an electron optical device array 500 is provided. The array 500 may include a plurality of any electron optical devices described herein. Each electron optical device focuses corresponding multiple beams simultaneously onto different areas of the same sample. Each electron optical device may form sub-beams from charged particle beams from different corresponding sources 201. Each corresponding source 201 may be one source among a plurality of sources 201. At least a subset of a plurality of sources 201 may be provided as a source array. The source array may include a plurality of sources 201 disposed on a common substrate. Focusing a plurality of multiple beams simultaneously onto different areas of the same sample allows for simultaneous processing (e.g., evaluation) of an increased area of ​​the sample 208. The electron optical devices in the array 500 may be arranged adjacent to each other so as to project corresponding multiple beams onto adjacent areas of the sample 208.

[0077] Any number of electron-optical devices may be used in array 500. Preferably, the number of electron-optical devices is in the range of two (2), desirably nine (9) to one hundred (100) or even two hundred (200). In one embodiment, the electron-optical devices are arranged in a rectangular array or a hexagonal array. In other embodiments, the electron-optical devices are provided in an irregular array or a regular array having a geometry other than rectangular or hexagonal. Each of the electron-optical devices in array 500 may be configured in any manner described herein when referring to a single electron-optical device, such as described above, particularly with respect to reference Figure 5 The embodiments shown and described. Details of this arrangement are described in EPA 20184161.6 filed on July 6, 2020, which is incorporated herein by reference as to how the objective lens can be incorporated and adapted for use in a multi-device arrangement.

[0078] exist Figure 4 In the example, array 500 includes multiple reference Figure 3 Electro-optical devices of the type described. Thus, each electron-optical device in this example includes a scanning deflector array 260 and a collimator element array 271. As described above, the scanning deflector array 260 and the collimator element array 271 are particularly suitable for incorporation into the electron-optical device array 500 because they are compact in space, which facilitates positioning the electron-optical devices close to each other. This arrangement of electron-optical devices can be advantageous over other arrangements that use magnetic lenses as collimators. For example, due to magnetic interference between columns, it may be challenging to incorporate a magnetic lens into an electron-optical device intended for use in a multi-device arrangement (e.g., a multi-column arrangement).

[0079] Alternative designs for multi-beam electron optics can have similarities to those of reference Figure 3 The same features are expected as described below and Figure 5As shown. An alternative design of a multi-beam electron optical device may include an upward beam collecting lens array 231 of an objective lens array arrangement 241, as disclosed in EP application 20158804.3 filed on February 21, 2020, which is incorporated herein by reference, with respect to the description of a multi-beam device with a collimator and its components. This design does not require a beam shaping limiter array 242 or an upper beam limiter array 252, because the beam limiting aperture array associated with the collecting lens array 231 can shape the beam waves 211, 212, 213 of the multiple beams from the source 201. The beam limiting aperture array of the collecting lens can also be used as an electrode in the lens array.

[0080] The paths of the beams 211, 212, 213 diverge away from the condenser lens array 231. The condenser lens array 231 focuses the generated beams to an intermediate focus (i.e., toward the control lens array and the objective lens array) between the condenser lens array 231 and the objective lens array assembly 241. The collimator array 271 may be at the intermediate focus, rather than associated with the objective lens array assembly 241.

[0081] The collimator can reduce the divergence of the divergent beam path. The collimator can collimate the divergent beam paths so that they are substantially parallel to the objective array assembly. The corrector array can be present in the multi-beam path, for example associated with the focusing lens array, the intermediate focus and the objective array assembly. The detector 240 can be integrated into the objective 241. The detector 240 can be on the bottom surface of the objective 241 so as to face the sample during use.

[0082] exist Figure 5 Shown and referenced Figure 5 In the described arrangement embodiments, the detector may be positioned with reference to Figure 3 The electronic optical device described and Figure 3 The detector 240 may be integrated into the objective lens array 241 and the control lens array 250 (when present, such as Figure 5241). The detector may have more than one detector at different locations along the path of the beamlets of the multi-beam, for example each array being associated with a different electron-optical element (e.g. an electrode of an objective lens array and / or a control lens array). The objective lens array 241 and associated electron-optical elements such as the control lens array 250 may be included in an assembly, which may be a monolithic assembly, which may be referred to as an electron-optical assembly or an electron-optical module 55. In one embodiment, the detector 240 is associated with a planar element of the electron-optical module 55, or even integrated into a planar element of the electron-optical module 55. For example, the detector 240 may be on the bottom surface of the electron-optical module 55 including the objective lens 241. The detector 240 may be provided with an electrical connection 60, as described elsewhere in this document. In a variant, the detector has a detector array positioned upstream of the objective lens array (optionally and the control lens array 250), for example upstream of the electron-optical module 55. Between the electron optics module 55 and the detector array may be a Wien filter array that directs the charged particle beam in a downstream direction toward the sample and directs signal particles from the sample to the detector array.

[0083] The electron optical device array may have multiple multi-beam devices of this design, as shown in reference Figure 3 The multi-beam device described by Figure 4 As shown. Multiple multi-beam devices can be arranged in an array of multi-beam devices. Such an arrangement is shown and described in EP application 20158732.6 filed on February 21, 2020, which is incorporated herein by reference, and relates to a multi-device arrangement of a multi-beam device, which is characterized by the disclosed design of a multi-beam device with a collimator at an intermediate focus. Another alternative design of a multi-beam device includes multiple single-beam devices. A single beam generated for the purposes of the invention described herein may be similar to or equivalent to a multi-beam generated by a single device. Each device may have an associated detector. Such a multi-device device may be arranged in a device array of three, four, nine, nineteen, fifty, one hundred or even two hundred devices, each device generating a single beam or beam wave (if a single beam device) or multiple beams (if a multi-beam device). In this other alternative design, the device array may have a common vacuum system, each device has an individual vacuum system, or the device groups are assigned different vacuum systems.

[0084] Electron optical device 40 may be part of an evaluation device (e.g., for inspection, metrology, subway inspection, or any other type of evaluation) or part of an electron beam lithography apparatus or other type of charged particle sensing sample patterning apparatus. Multi-beam charged particle apparatus may be used in many different applications, including electron microscopy in general, not just scanning electron microscopy and lithography.

[0085] The electron optical axis 304 describes the path of charged particles through the source 201 and out of the source 201. The beamlets and beamlets of the multiple beams can all be substantially parallel to the electron optical axis 304 at least by a manipulator or an electron optical array, for example, Figure 2 The arrangement shown and described herein is not limited to any other arrangement unless explicitly mentioned. The electron-optical axis 304 may be the same as or different from the mechanical axis of the electron-optical device 40. Figures 2 to 5 In the context of the arrangement shown and described, the electron optical axis can correspond to the path of the central beam of the multi-beam (e.g., beam 212). The beams of the multi-beam are at a collimated position (e.g., a position of collimator array 271, which corresponds to the plane of the intermediate focus (e.g., as shown in FIG. Figure 5 The surfaces of the electron beam limiter 252 (as shown) and the sample 208 are substantially parallel to each other (e.g., along the electron optical axis 304).

[0086] The electron optical device 40 may include Figure 6 The electron optical module 55 shown is used to manipulate the electron beam wave. For example, the electron optical module 55 may include one or more of the following (in a non-limiting list): an objective lens array 241, and / or a focusing lens array 231, and / or a collimator element array 271, and / or an individual beam corrector, and / or a deflector, and / or a Wien filter array. In particular, the objective lens 331 and / or the focusing lens 310 and / or the control lens 250 may include the electron optical module 55.

[0087] The electronic optical module 55 is configured to provide a potential difference between two or more plates (or substrates). An electrostatic field is generated between the plates as electrodes. The electrostatic field causes an attractive force between the two plates. The attractive force can increase as the potential difference increases.

[0088] Figure 6 The electron optical module 55 is schematically shown. The electron optical module 55 is configured to guide electrons along at least one beam path towards a sample location. Figure 6 In the orientation shown, at least one beam path extends vertically from top to bottom through the middle of the electron optical module 55. There may be one beam path corresponding to one electron beam. Alternatively, there may be multiple beam paths corresponding to multiple electron beamlets of multiple beams.

[0089] like Figure 6 As shown, in one embodiment, the electron optical module 55 includes a plurality of planar elements arranged across the beam path. In one embodiment, one or more planar elements are electron optical elements 60. The electron optical element 60 is configured to operate on one or more electron beams. Figure 6As shown, in one embodiment, all of the planar elements are electron optical elements 60. Alternatively, one or more of the planar elements may be planar elements other than electron optical elements. For example, one or more of the planar elements may be elements that do not require a voltage to be applied thereto in order to perform their function, or the planar elements require a voltage to be applied thereto so that there is a substantially zero potential difference between the element and an adjacent element along the beam path. An example is a planar element that is a beam limiting aperture array that includes apertures sized to shape the electron beam. For example, the apertures may allow a particular shape of electron beam to pass through while preventing other electrons from passing through the beam limiting aperture array. As another alternative, the planar element configured to shape the electron beam may also have a potential difference relative to an upstream and / or downstream planar element so that the electromagnetic field affects the electron beam in addition to the beam shaping function.

[0090] like Figure 6 As shown, in one embodiment, the electronic optical module 55 includes one or more spacers 70. The spacers 70 are configured to mechanically support the planar element. Figure 6 As shown, in one embodiment, spacer 70 is configured to mechanically separate planar elements such as electron optical element 60 from each other. In one embodiment, spacer 70 is configured to electrically isolate planar elements such as electron optical element 60 from each other. However, it is not necessary for spacer 70 to provide electrical insulation. For example, two adjacent electron optical elements 60 can be arranged to operate at the same voltage (that is, there is no potential difference between them), in which case electrical insulation may not be required. In one embodiment, one or more pairs of adjacent planar elements are directly adjacent to each other, i.e., there is no intermediate spacer 70. Spacer 70 is an optional feature.

[0091] The electron beam is configured to pass through the beam region 62 of the electron optical module 55. Figure 6 As shown, beam region 62 can be in a central portion of electron optical module 55. When viewed in a direction parallel to at least one beam path, beam region 62 is generally positioned in the center. When viewed in a direction orthogonal to the plane of the planar element, beam region 62 is positioned in the center.

[0092] In one embodiment, the electron-optical module 55 is included in the electron-optical device 40, for example Figure 2 , Figure 3 or Figure 5The electronic optical device 40 shown. In one embodiment, the electronic optical module 55 is field replaceable. The electronic optical module 55 can be removed from the electronic optical device 40 and / or inserted into the electronic optical device 40 without any substantial disassembly of other components of the electronic optical device 40. In other words, the electronic optical module 55 can be removed from the electronic optical device 40 and / or inserted into the electronic optical device 40.

[0093] In one embodiment, the electron optical module 55 includes an objective lens assembly, which includes an objective lens array 241. The electron optical module 55 may also include a control lens array 250, a detector 240 and / or a deflector array. In an alternative embodiment, the electron optical module 55 may be a condenser lens assembly. The electron optical module 55 may include a condenser lens array 231. The electron optical module 55 may also include, for example, one or more of a deflector array, a beam limiting aperture array.

[0094] Figure 7 is a schematic diagram of the electron optical element 60. Figure 7 is a schematic cross-sectional side view of the electron optical element 60. Figure 7 The aspect ratio used in is to make some features of the electron-optical element 60 more distinct.

[0095] The electro-optical element 60 is used in the electro-optical module 55, for example Figure 6 The electronic optical module 55 shown. Figure 7 As shown, in one embodiment, the electron optical element 60 includes a substrate 61. The substrate 61 can be a plate. The substrate 61 can be substantially planar. In one embodiment, the substrate 61 includes a semiconductor material. In one embodiment, the substrate 61 includes silicon.

[0096] like Figure 7 As shown, in one embodiment, the substrate 61 includes at least one hole 63. Figure 7 As shown, holes 63 extend through substrate 61. Each hole 63 is used for at least one beam path to pass therethrough. For example, Figure 7 A plurality of apertures 63 are shown. Each aperture 63 may allow one electron beam or a group of electron beams to pass through it. Figure 7 Five holes 63 are schematically shown. The number of holes 63 can be much greater than five. Figure 7 As shown, an aperture 63 is disposed in a beam region 62 of the electron optical element 60. In alternative embodiments, there may be only one aperture 63. For example, the electron optical device 40 including the electron optical element 60 may be configured to direct a single electron beam to a sample location. Alternatively, a single aperture 63 may be used for multiple beamlets of a multi-beam (or beam grid) to pass therethrough. The electron optical element 60 having a single aperture 63 may be a macro unit configured to operate on, for example, all beamlets of a multi-beam.

[0097] like Figure 7 As shown, in one embodiment, the electron optical element 60 includes at least one electronic component 64. The at least one electronic component 64 can be referred to as an active electronic device. The electronic component can be configured to operate under a voltage applied thereto during use of the electron optical element 60. The electronic component 64 can be configured to operate on one or more electron beams passing through the beam region 62. Additionally or alternatively, the at least one electronic component 64 can be configured to detect signal electrons from a sample location.

[0098] like Figure 7 As shown, in one embodiment, at least one electronic component 64 provides a component surface of the substrate 61. Figure 7 In the arrangement shown, the electronic component 64 provides the downstream surface of the substrate 61. The substrate 61 may include two main surfaces. One of the main surfaces is the upstream main surface at the upper beam end of the substrate 61. This is Figure 7 The other major surface is the downstream major surface. This is the top surface of the substrate in the orientation shown. Figure 7 The lower surface of the substrate 61 in the direction shown. The main surface of the substrate 61 is substantially planar. The main surface extends across the beam path. The hole 63 passes through the main surface of the substrate 61. The component surface provided by at least one electronic component 64 is the main surface of the substrate 61. Figure 7 In the example shown, the component surface is located at the downstream major surface of the substrate 61. The downstream major surface of the substrate 61 includes the component surface. The component surface forms part (but not all) of the downstream major surface. In an alternative embodiment, the component surface may be at the upstream major surface of the substrate 61.

[0099] like Figure 7 As shown, in one embodiment, the electronic optical element 60 includes an electrical connector 65. The electrical connector 65 is electrically connected to at least one electronic component 64. Figure 7 As shown, in one embodiment, the electrical connector 65 is directly electrically connected to the electronic component 64. The electrical connector 65 can be physically connected to the electronic component 64. However, the electrical connection between the electrical connector 65 and the electronic component 64 does not have to be direct. For example, as will be described in more detail below, the electrical connector 65 can be indirectly electrically connected to the electronic component 64 (see, for example, FIG. 1 ). Fig. 9 ). An intermediate component may be provided for electrical connection between the electrical connector 65 and the at least one electronic component 64.

[0100] like Figure 7As shown, the electrical connector extends through the substrate 61. The electrical connector 65 can be arranged to extend between the two main surfaces of the substrate 61. The electrical connector 65 can electrically connect the upstream surface of the substrate 61 to the downstream surface of the substrate 61. In one embodiment, the electrical connector is a via. The electrical connector 65 includes a conductive material. For example, the electrical connector 65 can be a through silicon via (TSV).

[0101] like Figure 7 As shown, in one embodiment, the substrate 61 includes a thicker portion 66 and a thinner portion 67. The thinner portion 67 is thinner than the thicker portion 66. The thickness direction of the substrate 61 may be a direction parallel to at least one beam path. The thickness direction may be parallel to the longitudinal direction of at least one hole 63. The thickness direction may be perpendicular to the plane of the substrate 61. The thicker portion 66 is thicker than the thinner portion 67 in a direction parallel to the beam path. The thinner portion 67 is thinner than the thicker portion 66 in a direction orthogonal to the plane of the substrate 61.

[0102] like Figure 7 As shown, in one embodiment, the electrical connector 65 extends through the thinner portion 67 of the substrate 61. A portion of the substrate 61 can be thinner, where the electrical connector 65 is provided, while other portions of the substrate 61 can be thicker. It is expected that embodiments of the present invention make it easier to provide electrical connectors through thick electron-optical elements 60. It is easier to provide electrical connectors 65 through thinner substrates. By providing the substrate 61 with a locally thin area, it is easier to add the electrical connector 65 without requiring the entire substrate 61 to be thin.

[0103] It is expected that embodiments of the present invention will make it easier to manufacture an electro-optical element 60 including a hole 63 and an electrical connection 65 passing through the hole. It is easier to form a hole through a thicker substrate, such as Figure 7 At least one hole 63 is shown. By providing the substrate 61 with a thicker portion 66 and a thinner portion 67, the hole 63 and the electrical connection 65 can be provided through the substrate 61 in a relatively easy manner.

[0104] It is expected that embodiments of the present invention make it easier to electrically connect the major surfaces of the electron-optical element 60 without making it unduly more difficult to regulate the temperature of the electron-optical element 60. During the use of the electron-optical element 60, it may heat up. For example, the electron beam may heat the substrate 61, for example, by interaction between the electron beam and the substrate 61. The electron-optical element 60 may heat up in particular in and around the beam region 62. In addition, active electronic devices such as at least one electronic component 64 may heat the substrate 61. Thicker substrates have greater thermal conductivity, preferably laterally. Thicker substrates are better at transferring heat laterally (i.e., perpendicular to the electron beam) through the substrate 61 to the peripheral edge of the substrate 61. Therefore, thicker substrates make it easier to remove thermal energy from the sides of the electron-optical element 60, thereby moderating the temperature of the electron-optical element 60. By providing a locally thinner portion 67, it is easier to add and / or manufacture electrical connectors 65 without excessively reducing the thermal conductivity of the substrate 61 as a whole due to thinning the entire substrate 61.

[0105] like Figure 7 As shown, in one embodiment, the thicker portion 66 includes at least one hole 63. The hole 63 can be disposed in the thicker portion 66, wherein the hole 63 is easier to form or define. It is expected that embodiments of the present invention make it easier to provide a hole 63 in an electron-optical element 60, the major surfaces of which are electrically connected to each other.

[0106] like Figure 7 As shown, in one embodiment, the electrical connector 65 extends substantially parallel to at least one beam path. The at least one beam path may be substantially perpendicular to the plane of the substrate 61. By providing an electrical connector parallel to at least one beam path, the electrical connector 65 may be as short as possible while providing an electrical connection between the upstream surface and the downstream surface of the substrate 61. The electrical connector 65 does not have to be precisely parallel to at least one beam path. For example, the electrical connector 65 may be arranged to be angled relative to the beam path. For example, when viewed in a cross-sectional side view, the electrical connector 65 may be positioned diagonally. The electrical connector 65 may have a longitudinal direction. The electrical connector 65 may be longer in the thickness direction of the substrate 61 (i.e., in the direction parallel to the beam path) than in the transverse direction (i.e., in the direction parallel to the plane of the substrate 61). Alternatively, the electrical connector 65 may be wider than its length. For example, when the thinner portion 67 of the substrate 61 is particularly thin, the electrical connector 65 may not be required to be very long. The length direction of the electrical connector 65 corresponds to the thickness direction of the substrate 61.

[0107] like Figure 7 As shown, in one embodiment, the component surface provided by the at least one electronic component 64 is a surface of a thicker portion 66 of the substrate 61 . Figure 7A transition 80 is shown where the thickness of the substrate 61 changes between a thicker portion 66 and a thinner portion 67. The transition 80 may correspond to a step change in the thickness of the substrate 61. The transition 80 may form a discontinuity in the thickness of the substrate 61. Figure 7 As shown, the transition portion 80 can be a sharp transition area. Alternatively, the transition can be formed more smoothly. For example, the thickness of the substrate 61 can gradually change from the thickness of the thicker portion 66 to the thickness of the thinner portion 67. Figure 7 In the illustrated arrangement, the transition 80 is formed by a single step change. The step change may include an intermediate inclined ramp of varying thickness between the thicker portion 66 and the thinner portion 67. In alternative embodiments, the transition 80 may include multiple steps, such as an intermediate inclined portion or a uniformly thick portion between the thicker portion 66 and the thinner portion 67.

[0108] exist Figure 7 In the view shown, the substrate 61 on the left side of the transition portion 80 corresponds to the thicker portion 66. The substrate 61 on the right side of the transition portion 80 corresponds to the thinner portion 67. Figure 7 As shown, at least one electronic component 64 can be at least partially positioned on the left side of the transition portion 80, that is, at least partially positioned in a portion of the thicker portion 66. Figure 7 As shown, in one embodiment, a portion of the component surface provided by at least one electronic component 64 is the surface of the thinner portion 67. Figure 7 , where a portion of at least one electronic component 64 is on the right side of the transition portion 80, i.e., a portion of the thinner portion 67. Alternatively, the component surface may be the entire portion of the thicker portion 66 (e.g., see Fig. 9 ). In another alternative embodiment, the at least one electronic component 64 may provide the entire component surface as part of the thinner portion 67. By providing the component surface in the thicker portion 66, the component surface may be provided in and around the beam region 62. The at least one electronic component 64 may directly operate the electron beam in the electron beam region 62.

[0109] like Figure 7 As shown, in one embodiment, at least one electronic component 64 is positioned near at least one hole 63. In one embodiment, the component surface surrounds at least one hole 63. For example, the component surface can be close to at least one hole 63. The component surface can be adjacent to at least one hole 63. For example, the component surface can include one or more electrodes at each hole 63.

[0110] like Figure 7 As shown, in one embodiment, the component surface is disposed at all holes 63. Alternatively, the component surface may be disposed only at a subset of holes 63, such as one or more holes 63. Figure 7As shown, in one embodiment, at least one hole 63 is defined in the component surface. The hole 63 can extend through the component surface provided by at least one electronic component 64. The at least one electronic component 64 can include one or more electrodes defining one or more holes 63. The electrodes can operate the electron beam passing through the hole 63.

[0111] For example, in one embodiment, at least one electronic component 64 includes one or more deflectors. Each deflector can be configured to operate the electron beam (or electron beam group) through the corresponding hole 63. The deflector can be configured to control the direction of the electron beam downstream of the electron optical element 60. For example, the deflector can be configured to control the position of the electron beam incident on the downstream electron optical element 60 or on the sample position. The deflector can be configured to control whether one or more electron beams pass through the holes of the downstream planar element or whether one or more electron beams are blocked by the downstream planar element.

[0112] In one embodiment, at least one electronic component 64 includes a multipole. The multipole may include a plurality of electrodes for a corresponding aperture 63. The multipole may be configured to correct one or more parameters of the electron beam passing through the aperture 63. For example, in one embodiment, the multipole may be an astigmatism correction device configured to moderate the shape of the electron beam passing through the aperture 63.

[0113] In one embodiment, the at least one electronic component 64 includes one or more detector elements. The detector elements may be configured to detect a current of signal electrons from the sample location.

[0114] In one embodiment, at least one electronic component 64 includes one or more aberration compensators or correctors. The aberration compensators may be formed as an aberration compensator array. In one embodiment, the aberration compensators may be configured to operate on individual apertures 63. For example, the aberration compensators may be configured to control field curvature and / or astigmatism of the electron beam.

[0115] like Figure 7 As shown, in one embodiment, the electro-optical component includes an electro-optical element 60 and an electronic circuit (e.g., included in a printed circuit board (PCB) 68). Figure 7 As shown, the electronic circuit is connected to the electrical connector 65. Figure 7 As shown, in one embodiment, the electronic circuit (e.g., PCB 68) is positioned such that the electronic circuit and at least one electronic component 64 are positioned on opposite sides of the substrate 61 in a direction parallel to at least one beam path. Figure 7In the arrangement shown, the PCB 68 is disposed on the upstream side of the substrate 61. The at least one electronic component 64 is disposed on the downstream side of the substrate 61. However, the PCB 68 need not be located on the upstream side. In an alternative embodiment, the PCB 68 is disposed on the downstream side of the substrate 61.

[0116] like Figure 7 As shown, in one embodiment, the electronic circuit is included in PCB 68. The PCB can be fixed to substrate 61. For example, PCB 68 can be fixed to substrate 61. In one embodiment, PCB 68 is bonded to substrate 61. PCB 68 can be fixed to a major surface of substrate 61. PCB 68 can overlap a portion of the major surface of substrate 61. Figure 7 As shown, in one embodiment, PCB 68 extends laterally beyond the peripheral outer edge of substrate 61 .

[0117] In one embodiment, the electronic circuit is configured to transmit power to at least one electronic component 64. For example, the electronic circuit may be electrically connected to a power source configured to provide power to at least one electronic component 64 via the electronic circuit. Additionally or alternatively, the electronic circuit may be configured to transmit a signal to at least one electronic component 64. For example, in one embodiment, the electronic circuit is configured to provide a control signal to the electronic component 64. The control signal may be, for example, a control signal for controlling a gain and / or offset of an analog-to-digital converter (ADC) included in the at least one electronic component 64. In one embodiment, the electronic circuit is configured to transmit a signal from the electronic component 64. For example, in one embodiment, the electronic circuit is configured to transmit a signal indicating a current of a signal electron detected at the substrate 61.

[0118] like Figure 7 As shown, in one embodiment, the electrical connector 65 is directly connected to the PCB 68. The electrical connector 65 can be directly connected to at least one electronic component 64 and the PCB 68.

[0119] Figure 8 is a schematic diagram of an alternative arrangement of electron optical element 60. Unless otherwise indicated, reference is made to Figure 8 The arrangement shown and described may be used with reference to Figure 7 The features and functions of the arrangement shown and described. Figure 8 As shown, in one embodiment, the electron optical element 60 includes a conductive layer 69. The conductive layer 69 can be supported by the substrate 61. In one embodiment, the conductive layer 69 includes a conductive material, such as a metal, especially a metal with low resistivity (such as copper, aluminum or gold). The conductive layer 69 can be a layer formed on the main surface of the substrate 61. For example, Figure 8As shown, in one embodiment, the conductive layer 69 is a layer at the upstream major surface of the substrate 61. The conductive layer 69 is electrically connected to the electrical connector 65. The connection between the conductive layer 69 and the electrical connector 65 can be direct. The conductive layer 69 can be mechanically connected to the electrical connector 65.

[0120] In one embodiment, the conductive layer 69 is configured to transmit signals to and from the electrical connector 65. For example, the conductive layer 69 can be configured to transmit power signals and / or communication signals (e.g., control signals) from electronic circuits in the PCB 68 to at least one electronic component 64 via the electrical connector 65. In one embodiment, the conductive layer 69 is configured to transmit communication signals (e.g., data signals) from the electronic component 64 to the electronic circuits in the PCB 68 via the electrical connector 65. The conductive layer 69 can be soldered or wire bonded to the PCB 68, for example.

[0121] In one embodiment, the electro-optical element 60 includes a plurality of electrical connectors 65 extending through the substrate 61. In one embodiment, the conductive layer 69 includes a plurality of traces. The traces can be used for corresponding electrical connectors 65. For example, in one embodiment, each of the plurality of electrical connectors 65 is electrically connected to the PCB 68 via a corresponding trace of the conductive layer 69.

[0122] In one embodiment, the conductive layer 69 is a coating on the substrate 61. The conductive layer is used to electrically connect to the electrical connector 65. The conductive layer 69 can be configured to distribute signals laterally, i.e., parallel to the plane of the substrate 61. The conductive layer 69 can be referred to as a redistribution layer. The conductive layer 69 can be configured to redistribute signals on the substrate 61.

[0123] In one embodiment, at least one electronic component 64 includes multiple layers of electronic circuitry. These layers may be positioned within the substrate 61 (e.g., as a CMOS device). Figure 8 As shown, the electrical connection of at least one electronic component 64 is further toward the periphery of substrate 61 than at least one electronic component 64. In one embodiment, conductive layer 69 is on substrate 61 and electrically connected to the electrical connection.

[0124] The electrical connection is an external electrical connection relative to the conductive layer 69. In one embodiment, the electrical connection is an electrical connector 65 that is electrically connected to at least one electronic component 64 and extends through the substrate 61. Alternatively, the electrical connection can be used to electrically connect components on the same side of the substrate 61. In one embodiment, the conductive layer 69 extends between the component surface and the electrical connection.

[0125] In one embodiment, the conductive layer 69 is electrically connected to the electrical connector 65 and the electrical connector (eg, PCB 68). Figure 8As shown, in one embodiment, the conductive layer 69 is on a different side of the substrate 61 than the component surface. Electrical connectors 65 extend through the substrate 61 between an electrical connection (eg, PCB 68) and at least one electronic component 64.

[0126] In one embodiment, conductive layer 69 and / or at least one electronic component 64 include one or more electrical elements for processing signals to and / or from the at least one electronic component, such as a transimpedance amplifier (TIA), a filter, and / or an ADC.

[0127] Fig.10 is a schematic plan view of the electron optical element 60. The electron optical element 60 may be, for example Figure 8 The electron-optical element 60 is shown. Fig.10 is a view in a direction parallel to at least one beam path. Fig.10 The view in FIG. 6 is viewed from the upstream side of the substrate 61 .

[0128] like Fig.10 As shown, in one embodiment, the electronic optical element 60 includes one or more connector regions 75. The connector region 75 is an area in which a plurality of electrical connectors 65 may be positioned. The electrical connectors 65 may be arranged relatively close to each other within the connector region 75. Fig.10 Three connector regions 75 are shown positioned around the bundle region 62. In one embodiment, the number of connector regions 75 is one, two, four, or more than four. Fig.10 In the arrangement shown, the connector region 75 is shown as being substantially longitudinal.Alternatively, the connector region 75 may be a substantially closed shape, such as a square, hexagon or circle, or at least a portion of two or more sides of such a shape.

[0129] like Fig.10 As shown, the conductive layer 69 includes a plurality of traces configured to electrically connect the connector regions 75 to the PCB 68. In one embodiment, the plurality of traces of the conductive layer 69 are configured to connect each connector region 75 to the PCB 68. In one embodiment, a separate trace may be provided for each electrical connector 65. One or more traces may be provided on the surface of the substrate 61 facing the sample.

[0130] like Fig.10 As shown, in one embodiment, the bundle area 62 is positioned between the connector areas 75. The connector areas 75 are positioned in the thinner portion 67 of the substrate 61. The bundle area 62 is positioned in the thicker portion 66 of the substrate 61. The transition 80 between the thinner portion 67 and the thicker portion 66 is positioned between the bundle area 62 and the connector area 75.

[0131] like Fig.10 As shown, in one embodiment, when viewed in a direction parallel to at least one beam path, the thicker portion 66 can have a rectangular shape. Alternatively, the thicker portion 66 can have a different shape, such as a semicircular or rectangular with rounded corners. Fig.10 As shown, in one embodiment, when viewed in plan, the thinner portion 67 extends around three sides of the thicker portion 66. Alternatively, the thinner portion 67 may extend along only one side of the thicker portion 66 (e.g., if the thinner portion 67 is omitted). Fig.10 The two connector areas 75 shown in the lower half of the ) or extend only along the sides of the thicker portion 66 (for example, if omitted Fig.10 ), or extending along all four sides of the thicker portion 66. In another embodiment, only a portion of the substrate 61 having a thinner thickness surrounds the corresponding connector area 75 and optionally surrounds a conductive area extending on the substrate surface, such as when the conductive layer 69 is on a side of the substrate 61 opposite the at least one electronic component 64, as described herein. In this arrangement, the PCB 68 can be secured to the substrate 61 at the periphery of a side of the electronic optical module 55 (such as the substrate 61). The thinner portion 67 can be a groove surrounding the connector area 75 and optionally at least a portion of the conductive layer 69. An embodiment can have a thinner portion 67 of any size between these extremes. However, it should be noted that a smaller thinner portion is desirable to optimize (e.g., maximize) the area of ​​the thicker portion 66 to improve the structural integrity of the substrate 61. As described above, Fig.10 The electron optical element 60 shown may have Figure 8 For example, the conductive layer 69 may be on the side of the substrate 61 opposite to the at least one electronic component 64. As a result, the at least one electronic component 64 is Fig.10 In an alternative embodiment, the conductive layer 69 may be on the same side of the substrate 61 as the at least one electronic component 64 .

[0132] like Figure 8 As shown, in one embodiment, the conductive layer 69 is configured to electrically connect the electrical connector 65 to another component away from the at least one hole 63. The distance between the hole 63 and the other component is greater than the distance between the hole 63 and the electrical connector 65. For example, Figure 8As shown, in one embodiment, another component remote from the hole 63 is a PCB 68. The conductive layer 69 is configured to electrically connect the electrical connector 65 to the PCB 68. Alternatively or additionally, the conductive layer 69 can be configured to electrically connect the electrical connector 65 to other electronic circuits, such as an image data processor and / or a power supply, which can be provided on the PCB 68 or electrically connected to the conductive layer 69 via the PCB 68. In one embodiment, all electrical connections of the electronic components 64 in or around the bundle area 62 can be through the conductive layer 69, the electrical connector 65 and the PCB 68, for example, even if one or more external and / or remote components are disposed outside the PCB 68 (i.e., not on the PCB 68). The conductive layer 69 is configured to electrically connect the electrical connector 65 near the bundle area to one or more components spaced further away from the bundle area 62.

[0133] Fig. 9 is a schematic diagram of another arrangement of the electron optical element 60. Fig. 9 Shown and referenced in Fig. 9 The described arrangement can be used in Figure 8 Shown and referenced in Figure 8 The features and functions of the arrangements described are as follows unless otherwise stated. Fig. 9 As shown, in one embodiment, the conductive layer 69 is positioned on one side of the substrate 61. For example, Fig. 9 In the arrangement shown, the conductive layer 69 is positioned on the downstream side (eg, the major downstream surface) of the substrate 61. Fig. 9 As shown, in one embodiment, at least one electronic component 64 is positioned on the same side of the substrate 61. Both the conductive layer 69 and the electronic component 64 are positioned on the same side of the substrate 61.

[0134] like Fig. 9 As shown, in one embodiment, the conductive layer 69 is directly connected to at least one electronic component 64. In one embodiment, the conductive layer 69 is positioned between the electrical connector 65 and the electronic component 64. The electrical connector 65 can be electrically connected to at least one electronic component 64 via the conductive layer 69. The conductive layer 69 can include a plurality of traces configured to electrically connect the corresponding electrical connector 65 to the at least one electronic component 64.

[0135] Conductive layer 69 can contact multiple layers of the at least one electrical component. Conductive layer 69 can be directly connected to a metal layer in multiple layers of at least one electrical component 64. The at least one electronic component 64 can have a terminal for electrical connection, which is smaller than the size of the component outside the electronic optical element 60 (for example, for chip packaging). Conductive layer 69 can be used as an interposer bridge from the surface size of the component to the package size. Conductive layer 69 can match the pitch density of different chip wiring technologies.

[0136] like Figures 7 to 9 As shown, in one embodiment, the electrical connector 65 is spaced apart from the bundle area 62. Fig. 9 As shown, in one embodiment, the electrical connector 65 is indirectly electrically connected to at least one electronic component 64. The conductive layer 69 can electrically connect the electrical connector 65 to the at least one electronic component 64. It is expected that embodiments of the present invention make it easier to extend the electrical connector 65 through the substrate 61 when manufacturing the electronic optical element 60. By providing the conductive layer 69 between the electrical connector 65 and the at least one electronic component 64, the electrical connector 65 does not need to be directly electrically connected to the at least one electronic component 64. It may be difficult to form a hole in the desired layer (e.g., the lower layer) of the at least one electronic component 64 to place the electrical connector 65. By providing the electrical connector 65 to be electrically connected to the conductive layer 69, it is easier to form a hole for the electrical connector 65 through the substrate 61.

[0137] It is expected that embodiments of the present invention will make it easier to regulate the temperature of the electro-optical component 60. Fig. 9 As shown, by providing the conductive layer 69 on the same side of the substrate 61 as the at least one electronic component 64, the electrical connector 65 can be located further away from the bundle area 62. The transition 80 between the thicker portion 66 and the thinner portion 67 can be located further away from the bundle area 62. A larger proportion of the substrate 61 can be formed by the thicker portion 66 (e.g., Figure 8 For example, compared to Figure 8 Compared to the electron optical element 60 shown in FIG. 1 , the volume of the substrate 61 can be increased. Figure 8 Compared to the electron optical element 60 shown in FIG. 5 , the average thickness of the substrate 61 can be increased. Generally, thicker substrates can have generally higher lateral thermal conductivity in the lateral direction (i.e., heat transfer in a direction substantially parallel to the plane of the substrate 61). Thicker substrates 61 generally have a larger cross-sectional area of ​​the heat path in the lateral direction. This can help, for example, to more effectively transfer heat away from the beam region 62 and at least one electronic component 64 toward the periphery of the substrate 61. This helps to remove thermal energy from the sides of the electron optical module 55. This helps to moderate the temperature of the electron optical element 60.

[0138] It is expected that embodiments of the present invention make it easier to provide electrical connections for electronic components that are positioned in spatially constrained locations. By providing electrical connectors 65 connecting both sides of substrate 61, electronic components 64 can be electrically connected on opposite sides of electron-optical element 60 where there may be more space. For example, in one embodiment, electron-optical element 60 may be the most downstream electron-optical element of electron-optical device 40. There may be only a small gap downstream from electron-optical component 60 to sample 208. Alternatively, there may be only a small gap from the next component of electron-optical element 60 to the next component of electron-optical device 40. Electrical connector 65 brings electrical contact to the other side of substrate 61 that is more accessible. The other side of substrate 61 can be reached laterally by electrical connection, such as from the outside of electron-optical module 55 via PCB 68, such as at spacer 70 or on the side adjacent to spacer 70. In Figure 8 In the arrangement shown, for example, conductive layer 69 is positioned on a more accessible side of substrate 61. Conductive layer 69 does not occupy any space on the other side of substrate 61, such as the surface of substrate 61 that may face the sample, where space may be more limited.

[0139] It is expected that embodiments of the present invention reduce the possibility of electrical interference with the electron beam. Conductive layer 69 allows spacer 70 to be further radially outwardly connected to substrate 61 (e.g., Figure 7 6), while avoiding interference with the PCB 68. By allowing the spacer 70 to be away from the electron beam region 62, the possibility of electrical interference with at least one electron beam is reduced.

[0140] like Fig. 9 As shown, in one embodiment, conductive layer 69 is at least partially on thicker portion 66 and at least partially on thinner portion 67 of substrate 61. Conductive layer 69 may span transition 80 between thicker portion 66 and thinner portion 67 when viewed in plan.

[0141] like Figures 7 to 10 As shown, in one embodiment, the thinner portion 67 of the substrate 61 extends to the peripheral edge of the substrate 61. The PCB 68 can be fixed to the main surface of the thinner portion 67 and extend beyond the peripheral edge of the substrate 61. In one embodiment, the thinner portion 67 extends toward the at least one hole 63. In one embodiment, the thinner portion 67 extends toward the at least one electronic component 64. The transition 80 between the thinner portion 67 and the thicker portion 66 can be spaced apart from the beam area 62. As shown in FIG. Fig. 9 As shown, in one embodiment, the transition portion 80 is spaced apart from at least one electronic component 64. Alternatively, as Figure 8As shown, in one embodiment, when viewed in a direction parallel to at least one beam path, at least one electronic component 64 extends across transition 80. In one embodiment, when conductive layer 69 is on a different side of substrate 61 than at least one electronic component 64, thinner portion 67 extends to overlap the component surface. Figure 8 As shown, in one embodiment, the component surface formed by at least one electronic component 64 is configured to overlap with the conductive layer 69 when the component surface is on a different side of the substrate 61 than the conductive layer 69. Fig. 9 As shown, in one embodiment, the thinner portion 67 extends so as to be spaced apart from the component surface. The thinner portion 67 and the component surface do not overlap. The conductive layer 69 can be on the same side as the component surface. In one embodiment, at least a portion of the conductive layer 69 is on the component surface provided by at least one electronic component 64. The traces of the conductive layer 69 can be connected to the terminals (e.g., electrodes or contacts or contact points) of at least one electronic component 64.

[0142] In one embodiment, at least one electronic component 64 is integrated into the substrate 61. Alternatively, at least one electronic component 64 can be fixed to the substrate 61. In one embodiment, the substrate 61 includes at least one electronic component 64. For example, in one embodiment, at least one electronic component 64 includes multiple layers. These layers can be circuit layers. For example, in one embodiment, at least one electronic component 64 includes a CMOS circuit.

[0143] In one embodiment, the CMOS circuit includes one or more metal layers. The metal layer may include one or more electrodes, for example, a surface of the CMOS circuit may be provided on the substrate 61, which surface may face the sample during operation. For example, the metal layer may include a detector element configured to detect signal electrons. The detector element may be referred to as a capture electrode. The capture electrode is an example of a sensor unit for detecting signal electrons. The power supply and control signals of the CMOS may be connected to the CMOS via an electrical connector 65. The CMOS circuit may include, for example, a logic layer in one or more layers different from the one or more electrodes. The logic layer may include amplifiers such as TIA, ADC and / or readout logic.

[0144] Fig.11 An alternative arrangement of the electron-optical element 60 is schematically shown. Fig.11 The views shown are views along a direction parallel to at least one beam path. Fig.10 As shown, in one embodiment, the beam region 62 forms a circle when viewed in plan. The circular shape is formed by holes 63, for example as an array of holes in the surface of the beam region 62. Fig.11As shown, in an alternative embodiment, when viewed in plan, the bundle area 62 is hexagonal. Alternatively, the bundle area 62 may be, for example, a square or rectangle, or any other desired closed shape that is desirably regular, such as a shape having sides of similar size.

[0145] like Fig.11 As shown, it is not necessary for the thinner portion 67 to extend to the peripheral edge of the substrate 61. In one embodiment, the PCB 68 surrounds the bundle area 62 in a plan view. The PCB 68 can be provided with a central hole. When viewed in a plan view, the bundle area 62 can be positioned within the central hole of the PCB 68. When viewed in a direction perpendicular to the plane of the substrate 61, the electrical connector 65 can be positioned within the central hole of the PCB 68. Fig.11 As shown, in one embodiment, electrical connectors 65 are arranged around bundle area 62. Conductive layer 69 may provide short connections between the electronic circuitry of PCB 68 and electrical connectors 65. Fig.11 The electron optical element 60 shown may have Figure 8 For example, the conductive layer 69 may be on the side of the substrate 61 opposite to the at least one electronic component 64. As a result, the at least one electronic component 64 is Fig.11 In an alternative embodiment, the conductive layer 69 may be on the same side of the substrate 61 as the at least one electronic component 64 .

[0146] The present invention may be implemented as a method for providing electrical connections through a substrate 61 of an electro-optical element 60. In one embodiment, the method includes extending an electrical connection 65 through a portion of the substrate 61.

[0147] Figures 12 to 15 The different steps of the method for manufacturing an electron-optical element 60 are schematically shown. Fig.12 As shown, in one embodiment, the method includes providing a portion of a substrate. For example, a substrate portion 81 is provided. The substrate portion 81 has a component surface provided by at least one electronic component 64. Once the electron-optical element 60 is made, the substrate portion 81 forms a portion of the substrate 61 of the electron-optical element 60. The substrate portion 81 can be a substrate. The substrate portion 81 can be planar. In one embodiment, when viewed in a plan view, the substrate portion 81 has the same size and shape as the substrate 61 of the completed electron-optical element 60. The thickness of the substrate portion 81 is equal to the thickness of the thinner portion 67 of the substrate 61. The substrate portion 81 forms the thinner portion 67.

[0148] like Fig.13As shown, in one embodiment, the method includes extending an electrical connector 65 through a substrate portion 81 so that the electrical connector 65 is electrically connected to at least one electronic component 64. In one embodiment, a hole is formed through the substrate portion 81. The hole can extend to the bottom layer of the at least one electronic component 64. The electrical connector 65 can be inserted into the hole (or through opening or through hole) through the substrate portion 81, for example, a material can be deposited in the hole to fill the hole and form the electrical connector 65. The electrical connector 65 can be a via or a metal connector. The electrical connector 65 can be made of a conductive material, such as a metal, in particular a metal with a low resistivity (such as copper, aluminum or gold).

[0149] like Fig.13 As shown, in one embodiment, the method includes applying a conductive layer 69. The conductive layer 69 is used to connect to the electrical connector 65. In one embodiment, the conductive layer 69 is applied after the electrical connector 65 is extended through the substrate portion 81.

[0150] In one embodiment, conductive layer 69 is used to electrically connect to at least one electronic component 64. In one embodiment, conductive layer 69 is configured to extend between an electronic circuit board (eg, PCB 68) on a different side of substrate 61 than the component surface.

[0151] In one embodiment, the extension of the electrical connector 65 includes, for example, etching a through hole through the substrate portion 81 before forming the conductive layer 69. The through hole is filled with a conductive material such as a metal. Alternatively, in one embodiment, the conductive layer 69 is applied before the electrical connector 65 is connected through the substrate portion 81.

[0152] like Fig.14 As shown, in one embodiment, the method includes fixing two substrate portions 81, 82 together to form the substrate 61. The combined thickness of the substrate portions 81, 82 can be equal to the thickness of the thicker portion 66 of the substrate 61. When viewed in a plan view, the added substrate portion 82 can have a size and shape equal to the size and shape of the thicker portion 66 of the substrate 61. Fig.14 As shown, in one embodiment, at least one peripheral edge of the two substrate portions 81, 82 is aligned in a direction orthogonal to the plane of the substrate 61. In one embodiment, the two substrate portions 81, 82 are fixed together by a substrate bonding process. In one embodiment, for the thicker portion 66 of the substrate 61, the two substrate portions 81, 82 are fixed together by overlapping the two substrate portions 81, 82. In one embodiment, the thinner portion 67 is formed by one of the two substrate portions. The portion of the substrate portion 81 that does not overlap with the other substrate portion 82 forms the thinner portion 67 of the substrate 61.

[0153] In one embodiment, the two substrate portions 81, 82 are secured together after the electrical connector 65 extends through the substrate portion 81. It is expected that embodiments of the present invention make it easier to manufacture the electronic optical element 60. It can be easier to process on a substrate having a substantially uniform thickness. By adding the electrical connector 65 before joining the two substrate portions 81, 82 together, the process of applying the electrical connector 65 can be performed on a substrate having a substantially uniform thickness. This can simplify the process. In one embodiment, the conductive layer 69 is applied before the substrate portions 81, 82 are joined together. It can be easier to apply the conductive coating 69 to a substrate of substantially uniform thickness.

[0154] like Fig.15 As shown, in one embodiment, the method includes defining at least one hole 63 through the substrate 61. The hole 63 is for at least one beam path to pass therethrough. Fig.15 As shown, in one embodiment, a plurality of holes 63 are formed in the beam region 62. The holes 63 may be formed through the thicker portion 66 of the substrate 61. The holes 63 may be formed through both substrate portions 81, 82 so as to extend all the way through the thickness of the substrate 61.

[0155] In one embodiment, electrical connector 65 extends through substrate 61 before defining at least one hole 63 through thicker portion 66 of substrate 61 .

[0156] In one embodiment, the method of manufacturing an electro-optical component includes fixing a PCB 68 to a substrate 61. The PCB 68 may be electrically connected to a conductive layer 69. Figure 8 The electron optical components shown.

[0157] Already referred to Figures 12 to 15 A method of manufacturing an electro-optical element 60 is described. The manufactured electro-optical element 60 may have, for example, Figure 8 Arrangement shown.

[0158] In another embodiment, the fabricated electron optical element 60 may have, for example, Fig. 9 The method for manufacturing the electronic optical element 60 can refer to Figures 12 to 15 The description will be made with the following differences: The conductive layer 69 may be formed on the same side of the substrate portion 81 as the component surface provided by the at least one electronic component 64 .

[0159] In the base plate parts 81 and 82, Figures 12 to 15It is not necessary to provide the electrical connector 65 and the conductive layer 69 before joining together as shown and described. In alternative embodiments, the substrate portions 81, 82 can be fixed together before the electrical connector 65 extends through the thinner portion 67. Additionally or alternatively, the substrate portions 82, 81 can be fixed together before the conductive layer 69 is applied.

[0160] In one embodiment, it is possible to manufacture Figure 7 The method of manufacturing the electron optical element 60 can refer to Figures 12 to 15 The description is as follows, the differences are as follows: The conductive layer 69 may be omitted.

[0161] refer to Figures 15 to 18 Another method of providing electrical connections through the substrate 61 of the electro-optical element 60 is described. Fig.16 As shown, in one embodiment, the method includes providing a substrate 61. The substrate 61 has a component surface provided by at least one electronic component 64. In one embodiment, the method includes forming the component surface by forming the electronic component 64. The provided substrate 61 can have the same thickness as the desired thickness of the substrate 61 in the electronic optical element 60 to be manufactured.

[0162] like Fig.17 As shown, in one embodiment, the method includes defining at least one hole 63 through the substrate 61. The hole 63 is for at least one beam path to pass therethrough. The hole 63 extends all the way through the thickness of the substrate 61.

[0163] like Fig.18 As shown, in one embodiment, the method includes removing material from the substrate body to form a thinner portion 67 of the substrate 61. For example, in one embodiment, the material is removed by etching. For example, a dry etching process can be used. Alternatively, a wet etching process can be used. Alternatively, the material can be removed, for example, by grinding or cutting.

[0164] In one embodiment, the aperture 63 is defined prior to removing material from the substrate body. The aperture 63 may be more easily defined through the substrate 61 when the substrate has a substantially uniform thickness. It is contemplated that embodiments of the present invention make it easier to manufacture the electron-optical element 60.

[0165] In one embodiment, the method includes extending the electrical connector 65 through a portion of the substrate 61. For example, the electrical connector 65 may extend through Fig.18 The thinner portion 67 of the substrate 61 is shown to provide a Fig.15 The electron optical element 60 shown. Fig.15 As shown, in one embodiment, the method includes applying a conductive layer 69 .

[0166] In one embodiment, material is removed from the substrate body prior to extending the electrical connector 65 through the thinner portion 67 of the substrate. This makes it easier to form the electrical connector 65 through the thinner portion of the substrate after the material is removed from the substrate body. In one embodiment, the removal of material is after at least one hole 63 has been defined through the thicker portion 66 of the substrate 61.

[0167] In one embodiment, the hole 63 is protected when material is removed from the substrate body to form the thinner portion 67 of the substrate 61. For example, a protective cover or protective material may be provided as a barrier to protect the hole 63.

[0168] The manufactured electron optical element 60 may have, for example, Figure 8 In an alternative embodiment, a structure such as Fig. 9 The electron optical element 60 shown is used to manufacture Fig. 9 The method of the electron optical element 60 shown can be used in conjunction with Figures 15 to 18 The method described is the same, except as follows. Conductive layer 69 can be applied to the same side of substrate 61 as at least one electronic component 64. Conductive layer 69 can be used to electrically connect to at least one electronic component 64. In one embodiment, conductive layer 69 extends between electrical connector 65 and at least one electronic component 64 (or a component surface provided by at least one electronic component 64).

[0169] In an alternative embodiment, a device having a Figure 7 The method for manufacturing the electron optical element 60 can be as described above. Figures 15 to 18 The above has the following differences: The conductive layer 69 can be omitted.

[0170] In one embodiment, the at least one hole 63 is formed by etching the at least one hole 63 through the substrate 61. In one embodiment, the at least one hole 63 is formed through a thicker portion 66 of the substrate 61. In one embodiment, the at least one hole 63 is formed using deep reactive ion etching, such as a Bosch process.

[0171] The electron optical module 55 may include or be a lens assembly for manipulating the electron beam wave. The lens assembly may be or may be a part of an objective lens assembly or a focusing lens assembly, for example. The lens assembly, such as an objective lens assembly, may also include an additional lens array, which includes at least two plates, such as a control lens array 250.

[0172] In one embodiment, at least one of the electron-optical elements 60 comprises a micro-electromechanical component. In one embodiment, the electron-optical module 55 comprises one or more electron-optical elements, which include elements that can be referred to as micro-electromechanical components (although such components may not include moving or movable features), or can be manufactured using a technology suitable for manufacturing micro-electromechanical components (e.g., "MEMS technology"), some of which are designed to have an electron-optical function. The electron-optical module 55, or at least the components of the electron-optical module 55, can be manufactured by such a technology. The electron-optical module 55 can include one or more elements that can be considered as MEMS elements. During use, one or more such elements can be controlled to be set at a high potential difference relative to a reference potential (e.g., ground). Such an element can be electrically connected to one or more voltage sources for providing a voltage to the element. In one embodiment, the controller is configured to control the voltage applied to the element. Such an element may require precise positioning (e.g., alignment) within the electron-optical module 55, for example, relative to the path of the beam grid and relative to other electron-optical elements within the device, for example, relative to the source, relative to the path of the sample and / or the beam grid. It is contemplated that embodiments of the present invention allow for more precise positioning (e.g., alignment) of such elements within a stack of such electron-optical modules 55, for example, during operation, without deforming the electron-optical modules 55, for example, by externally applied forces or moments. Additionally or alternatively, embodiments of the present invention may enable more precise positioning, e.g., alignment, of such elements relative to other elements in the electron-optical device 40, thereby enabling more precise positioning, e.g., alignment, of a stack of electron-optical modules 55 including such elements within the electron-optical device 40.

[0173] As described above, in one embodiment, the electron optical module 55 is an electron optical lens assembly. The electron optical lens assembly may include an objective lens assembly. The electron optical lens assembly may be an objective lens assembly. In an alternative embodiment, the electron optical lens assembly is an electron optical focusing lens assembly.

[0174] In one embodiment, the electron optical module 55 includes a collimator. For example, in one embodiment, the electron optical module 55 includes a magnetic collimator combined with an electrostatic focusing lens array. The electron optical module 55 may include a single-aperture lens array with one or two macro electrodes, which is placed away from the virtual source conjugate plane.

[0175] In an alternative embodiment, the electron optical module 55 includes a magnetic macro lens combined with an electrostatic slit deflector. The magnetic macro lens can be used for collimation. As another alternative, in one embodiment, the electron optical module 55 includes a combined magnetic and electrostatic macro lens and a downstream slit deflector.

[0176] Typically, the electron optical module 55 may include any plates, such as plates of detector arrays, plates of lens electrodes (into which multiple deflectors may be integrated), multiple deflector arrays, beam aperture arrays (such as upstream aperture arrays and / or final beam limiting arrays), deflector arrays (such as strip deflector arrays), and other types of corrector elements.

[0177] The embodiments described in this document mainly focus on a multi-beam electron optical device 40. The present invention is equally applicable to a single-beam electron optical device 40.

[0178] A plurality of electron-optical devices may be included in the electron-optical device array. The electron-optical devices of the electron-optical device array are preferably configured to focus the respective multiple beams simultaneously onto different areas of the same sample.

[0179] Although the present invention has been described in conjunction with various embodiments, other embodiments of the present invention will be apparent to those skilled in the art by considering the specification and practice of the present invention disclosed herein. For example, as described above, in one embodiment, the substrate has portions of different thicknesses, and the electrical connector extends through the thinner portion. However, the thickness of the substrate may also be uniform. The electrical connection of the electronic component may be more toward the periphery of the substrate than the electronic component, and the conductive layer may be electrically connected to the electrical connection. The specification and embodiments are intended to be considered as exemplary only, and the true scope and spirit of the present invention are indicated by the appended claims.

[0180] The above description is intended to be illustrative rather than limiting. It will therefore be apparent to one skilled in the art that modifications may be made as described without departing from the scope of the claims and clauses set out below.

[0181] Although the present invention has been described in conjunction with various embodiments, other embodiments of the present invention will be apparent to those skilled in the art through consideration of the specification and practice of the invention disclosed herein. The specification and embodiments are considered exemplary only, with the true scope and spirit of the present invention being indicated by the following claims and clauses.

[0182] Provide the following terms.

[0183] Item 1. A charged particle optical element for a charged particle optical module, the charged particle optical module being configured to guide charged particles along at least one beam path, the charged particle optical element comprising: a substrate comprising at least one hole for the at least one beam path to pass therethrough; at least one electronic component to provide a component surface of the substrate; and an electrical connector electrically connected to the at least one electronic component and extending through the substrate; wherein the substrate comprises a thicker portion and a thinner portion thinner than the thicker portion, and the electrical connector extends through the thinner portion.

[0184] Clause 2. A charged particle optical element according to clause 1, wherein the thicker portion comprises at least one hole.

[0185] Clause 3. A charged particle optical element according to clause 1 or 2, wherein the electrical connection extends substantially parallel to at least one beam path.

[0186] Clause 4. A charged particle optical element according to any preceding clause, wherein the component surface is a surface of a thicker portion of the substrate in a direction parallel to the at least one beam path.

[0187] Clause 5. A charged particle optical element according to any preceding clause, wherein the at least one electronic component is located adjacent to the at least one hole, desirably with the component surface surrounding the at least one hole.

[0188] Clause 6. A charged particle optical element according to any preceding clause, comprising a conductive layer supported by the substrate and connected to the electrical connector, desirably the conductive layer is a coating on the substrate electrically connected to the electrical connector.

[0189] Clause 7. A charged particle optical element according to clause 6, wherein the conductive layer is positioned such that the conductive layer and the at least one electronic component are positioned on opposite sides of the substrate in a direction parallel to the at least one beam path.

[0190] Clause 8. A charged particle optical element according to clause 6 or 7, wherein the conductive layer is configured to electrically connect the electrical connection to another component remote from the at least one hole.

[0191] Clause 9. A charged particle optical element according to clause 6, wherein the conductive layer is positioned on one side of the substrate and the at least one electronic component is positioned on the same side of the substrate in a direction parallel to the at least one beam path.

[0192] Clause 10. A charged particle optical element according to clause 6 or 9, wherein the conductive layer is configured to electrically connect the electrical connector to the at least one electronic component.

[0193] Clause 11. A charged particle optical element according to any one of clauses 6 to 10, wherein the conductive layer is at least partially on a thicker portion and at least partially on a thinner portion in a direction parallel to the at least one beam path.

[0194] Clause 12. A charged particle optical element according to any of the preceding clauses, wherein the thinner portion of the substrate extends to a peripheral edge of the substrate, desirably extending towards the at least one hole and / or the at least one electronic component.

[0195] Clause 13. A charged particle optical element according to clause 12, wherein when the conductive layer is on a different side of the substrate than at least one electronic component, the thinner portion extends so as to overlap the component surface.

[0196] Clause 14. A charged particle optical element according to clause 12 or 13, wherein when the conductive layer is on a different side of the substrate than at least one electronic component, the component surface is configured to overlap with the conductive layer.

[0197] Clause 15. A charged particle optical element according to any preceding clause, wherein the at least one electronic component comprises one or more detector elements configured to detect signal charged particles, desirably individual electronic components are detector elements.

[0198] Item 16. A charged particle optical element according to any of the preceding items, wherein the at least one electronic component comprises one or more deflectors and / or one or more correctors configured to operate on at least one beam path, desirably, individual electronic components are deflectors and / or correctors, for example comprising a plurality of electrodes surrounding individual holes in the at least one hole.

[0199] Clause 17. A charged particle optical element according to any of the preceding clauses, wherein the at least one electronic component is integrated into the substrate, or the at least one electronic component is fixed to the substrate, desirably the substrate includes the at least one electronic component.

[0200] Clause 18. A charged particle optical element according to any preceding clause, wherein the electrical connection is a via.

[0201] Clause 19. A charged particle optical element according to any preceding clause, wherein the at least one electronic component comprises a plurality of layers, desirably a plurality of circuit layers, for example the at least one electronic component comprises a CMOS circuit.

[0202] Clause 20. A charged particle optical element according to any preceding clause, comprising micro-electromechanical components.

[0203] Clause 21. A charged particle optical component comprising:

[0204] A charged particle optical element as defined in any of the preceding clauses; and

[0205] An electronic circuit is electrically connected to the electrical connector and is positioned such that the electronic circuit and the at least one electronic component are positioned on opposite sides of the substrate in a direction parallel to the at least one beam path.

[0206] Clause 22. A charged particle optical component according to clause 19, wherein the electronic circuit is included in a printed circuit board fixed to the substrate.

[0207] Clause 23. A charged particle optic component according to clause 20, wherein the printed circuit board extends beyond a peripheral edge of the substrate.

[0208] Clause 24. A charged particle optical module configured to guide charged particles to a sample location along at least one beam path, the charged particle optical module comprising a charged particle optical element according to any one of clauses 1 to 18 or a charged particle optical component according to any one of clauses 19 to 21.

[0209] Item 25. A charged particle optical module according to Item 22, comprising at least one of: a deflector array comprising a plurality of individual deflectors configured to controllably operate on the beam path; a beam stop array comprising an array of holes through which the beam path passes; an objective lens array configured to focus the charged particles onto the sample position; and a focusing lens array configured to generate a plurality of charged particle beams from a source beam and / or to focus the plurality of beams at an intermediate focal plane.

[0210] Clause 26. A charged particle optical device for directing charged particles onto a sample location, the charged particle optical device comprising a charged particle optical module according to clause 23.

[0211] Clause 27. A charged particle optical device, comprising the charged particle optical module according to Clause 23 or the charged particle optical device according to Clause 24.

[0212] Clause 28. Charged particle optical apparatus according to clause 25, further comprising an actuatable stage for supporting a sample at the sample position.

[0213] Clause 29. A method for providing electrical connections through a substrate of a charged particle optical element for a charged particle optical module, the charged particle optical module being configured to direct charged particles along at least one beam path, the at least one beam path extending through at least one hole through the substrate, the at least one hole for the at least one beam path to pass therethrough, the method comprising:

[0214] extending an electrical connector through a portion of the substrate having a component surface provided by at least one electronic component such that the electrical connector is electrically connected to the at least one electronic component;

[0215] wherein the substrate comprises at least one hole for the at least one beam path to pass therethrough, the substrate comprises a thicker portion and a thinner portion, the thinner portion being thinner than the thicker portion in a direction parallel to the at least one beam path, and the electrical connector extends through the thinner portion.

[0216] Clause 30. A method for providing electrical connections through a substrate of a charged particle optical element for a charged particle optical module, the charged particle optical module being configured to direct charged particles along at least one beam path, the at least one beam path extending through the substrate at an aperture for the at least one beam path to pass therethrough, the method comprising:

[0217] extending an electrical connector through a portion of the substrate having a component surface provided by at least one electronic component such that the electrical connector is electrically connected to the at least one electronic component; and

[0218] defining at least one aperture through the substrate for passage of the at least one beam path therethrough,

[0219] The substrate comprises a thicker portion and a thinner portion, the thinner portion being thinner than the thicker portion in a direction parallel to the at least one beam path, and the electrical connector extends through the thinner portion.

[0220] Clause 31. A method according to clause 29 or 30, comprising securing two substrate parts together to form the substrate.

[0221] Clause 32. The method of clause 31, wherein the securing comprises overlapping the two substrate portions to form the thicker portion, desirably forming the thinner portion from one of the two substrate portions.

[0222] Clause 33. A method according to clause 31 or 32, wherein the securing is after extending the electrical connector through one of the two substrate portions and / or before defining the at least one hole through the thicker portion.

[0223] Clause 34. The method of clause 29 or 30, comprising removing material from a bulk substrate to form the thinner portion of the substrate.

[0224] Clause 35. The method of clause 34, wherein the removing is before extending the electrical connector through the thinner portion of the substrate and / or after defining the at least one hole through the thicker portion.

[0225] Clause 36. The method of any one of clauses 29 to 35, wherein a conductive layer is applied after extending the electrical connector, the conductive layer being used to connect to the electrical connector.

[0226] Clause 37. The method of any of clauses 29 to 36, wherein extending the electrical connector comprises etching a via through the portion of the substrate and filling the via with a conductive material.

[0227] Clause 38. A method according to any one of clauses 29 to 37, wherein the at least one hole is formed by etching the at least one hole through the substrate, desirably through the thicker portion.

[0228] Clause 39. A charged particle optical element for a charged particle optical module, the charged particle optical module being configured to guide charged particles along at least one beam path, the charged particle optical element comprising: a substrate comprising at least one hole for the at least one beam path to pass therethrough; at least one electronic component configured to provide a component surface of the substrate and comprising a multilayer electronic circuit (desirably within the substrate), the at least one hole being defined in the component surface;

[0229] an electrical connection for the at least one electronic component, the electrical connection being further toward the periphery of the substrate than the at least one electronic component; and

[0230] A conductive layer is on the substrate and electrically connected to the electrical connection.

[0231] Clause 40. A charged particle optical element according to clause 39, wherein desirably, the conductive layer is a coating on the substrate that is electrically connected to the electrical connector.

[0232] Item 41. A charged particle optical element according to Item 39 or 40, wherein the electrical connection is an electrical connector [or via] electrically connected to the at least one electronic component and extending through the substrate, preferably the conductive layer extends between the component surface and the electrical connection, and preferably the conductive layer contacts multiple layers of the at least one electrical component.

[0233] Item 42. A charged particle optical element according to Item 39 or 40, wherein an electrical connector extends through the substrate, the conductive layer is preferably electrically connected to the electrical connector and the electrical connection, the conductive layer is preferably on a side of the substrate different from the component surface, and the electrical connector is preferably extended through the substrate between the electrical connection and the at least one electronic component.

[0234] Clause 43. A charged particle optical element according to clause 41 or 42, wherein the substrate has a thinner portion and a thicker portion (which has a larger dimension in the direction of the beam path), the electrical connection extending through the thinner portion and the at least one hole extending through the thicker portion.

[0235] Clause 44. A charged particle optical element according to clause 41 or 42, wherein the electrical connection is configured to transmit power and / or control signals to the at least one component and / or to transmit data signals from the at least one component.

[0236] Clause 45. A charged particle optical element according to any one of clauses 39 to 43, wherein the conductive layer is configured to transmit power and control data to the at least one electronic component and / or to transmit data signals from the at least one component.

[0237] Item 46. A charged particle optical element according to any one of items 39 to 44, wherein the conductive layer and / or at least one component includes one or more electronic components for processing signals transmitted to and / or from at least one electronic component, such as a transimpedance amplifier, a filter and / or an analog-to-digital converter.

Claims

1. A charged particle optical element for a charged particle optical module, the charged particle optical module being configured to guide charged particles along at least one beam path, the charged particle optical element comprising: a substrate comprising at least one aperture for passage of the at least one beam path therethrough; at least one electronic component to provide a component surface of the substrate; as well as an electrical connector electrically connected to the at least one electronic component and extending through the substrate; The substrate includes a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extends through the thinner portion.

2. A charged particle optical element according to claim 1, wherein the thicker portion comprises at least one hole.

3. A charged particle optical element according to claim 1 or 2, wherein the electrical connection extends substantially parallel to the at least one beam path.

4. A charged particle optical element according to any one of the preceding claims, wherein the component surface is a surface of the thicker portion of the substrate in a direction parallel to the at least one beam path.

5. A charged particle optical element according to any one of the preceding claims, wherein the at least one electronic component is located adjacent to the at least one hole, desirably with the component surface surrounding the at least one hole.

6. A charged particle optical element according to any preceding claim, comprising a conductive layer supported by the substrate and connected to the electrical connection, desirably the conductive layer is a coating on the substrate in electrical connection with the electrical connection.

7. A charged particle optical element according to claim 6, wherein the conductive layer is positioned such that the conductive layer and the at least one electronic component are positioned on opposite sides of the substrate in a direction parallel to the at least one beam path.

8. A charged particle optical element according to claim 6 or 7, wherein the conductive layer is configured to electrically connect the electrical connection to another component remote from the at least one hole.

9. A charged particle optical element according to any one of claims 6 to 8, wherein the conductive layer is at least partially on the thicker portion and at least partially on the thinner portion in a direction parallel to the at least one beam path.

10. A charged particle optical element according to any one of the preceding claims, wherein the thinner portion of the substrate extends to a peripheral edge of the substrate, desirably extending towards the at least one hole and / or the at least one electronic component.

11. A charged particle optical element according to claim 10, wherein the thinner portion extends to overlap with the component surface when the conductive layer is on a different side of the substrate from the at least one electronic component; and / or wherein the component surface is configured to overlap with the conductive layer when the conductive layer is on a different side of the substrate from the at least one electronic component.

12. A charged particle optical element according to any preceding claim, wherein the at least one electronic component comprises one or more detector elements configured to detect signal charged particles, desirably individual electronic components are detector elements.

13. A charged particle optical element according to any one of the preceding claims, wherein the at least one electronic component is integrated into the substrate, alternatively, the at least one electronic component is fixed to the substrate, desirably, the substrate includes the at least one electronic component.

14. A charged particle optical element according to any one of the preceding claims, wherein the electrical connection is a via.

15. A charged particle optical component comprising: A charged particle optical element according to any one of the preceding claims; as well as An electronic circuit is electrically connected to the electrical connector and is positioned such that the electronic circuit and the at least one electronic component are positioned on opposite sides of the substrate in a direction parallel to the at least one beam path.

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