Detection circuit

Abstract

The present invention includes: a comparison unit to which a reference voltage and a signal output from an output terminal of a given amplifier are input, and to which a first output signal corresponding to a difference between a signal level of the signal output from the given amplifier and the reference voltage is output from the output terminal; a DC removal unit, one terminal of which is electrically connected to the output terminal of the comparison unit, and the other terminal of which outputs a signal from which the DC component of the first output signal has been removed; and a detection unit, an input terminal of which is electrically connected to the other terminal of the DC removal unit, and an output terminal of which outputs a control signal corresponding to the signal level of the signal output from the predetermined amplifier.

Description

Technical Field

[0001] The present disclosure relates to detection circuits. Background Art

[0002] For example, it is known that in a power amplifier circuit including a plurality of power amplifiers such as a Doherty amplifier circuit, a circuit for detecting saturation of the power amplifier is provided in order to improve efficiency (Patent Document 1).

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2020 / 28472 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] Patent document 1 discloses a power amplifier circuit including a saturation detection circuit for detecting the saturation of a power amplifier. In the saturation detection circuit described in patent document 1, an input terminal of a comparator for detecting the saturation of a power amplifier is electrically connected to an output terminal of the power amplifier. Moreover, the output of the comparator of the saturation detection circuit becomes a direct output of the saturation detection circuit. The saturation detection circuit smoothes the sum of the collector voltages of two transistors whose emitters are electrically connected to the power amplifier through a resistor and whose collectors are electrically connected to a terminal for detecting saturation, and outputs a direct current detection signal. At this time, the saturation detection circuit outputs a detection signal of a direct current voltage stabilized by a self-bias effect brought about by a resistor connected to the emitter of the transistor. However, in the saturation detection circuit, it takes time for the direct current voltage to stabilize due to the operation of the transistor. Therefore, the time until saturation is detected becomes longer. As described above, in the saturation detection circuit, due to the direct current component directly output from the comparator, the response of the comparator itself is delayed, so the following problem occurs, that is, the detection of the signal level of the power amplifier is delayed.

[0008] Therefore, an object of the present disclosure is to provide a detection circuit that can quickly detect saturation of a power amplifier.

[0009] Technical solutions to solve problems

[0010] A detection circuit according to one aspect of the present invention includes: a comparison unit, to which a signal output from an output terminal of a given amplifier and a reference voltage are input, and a first output signal corresponding to the difference between the signal level of the signal output from the given amplifier and the reference voltage is output from an output terminal; a DC removal unit, one terminal of which is electrically connected to the output terminal of the comparison unit, and outputs a signal obtained by removing the DC component of the first output signal from another terminal; and a detection unit, an input terminal of which is electrically connected to the other terminal of the DC removal unit, and outputs a control signal corresponding to the signal level of the signal output from the given amplifier from an output terminal.

[0011] Effects of the Invention

[0012] According to the present disclosure, it is possible to provide a detection circuit that can quickly detect saturation of a power amplifier. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 FIG. 1 is a diagram showing an example of the structure of a power amplifier module.

[0014] Figure 2 It is a diagram showing the structure of a power amplifier module according to a first modification.

[0015] Figure 3 It is a diagram showing the structure of a power amplifier module according to a second modification.

[0016] Figure 4 It is a diagram showing the structure of a power amplifier module according to a third modification.

[0017] Figure 5 It is a diagram showing the structure of a power amplifier module involved in the fourth modification.

[0018] Figure 6 It is a diagram showing the structure of a power amplifier module according to a fifth modification.

[0019] Figure 7 It is a diagram showing an example of the configuration of a detection circuit.

[0020] Figure 8 It is a diagram showing a specific example of the structure of the detection circuit.

[0021] Fig. 9 This is a diagram showing an example of the configuration of a detection circuit according to the first modification.

[0022] Fig.10 This is a diagram showing another example of the configuration of the detection circuit according to the first modification.

[0023] Fig.11 It is a diagram showing the structure of a detection circuit according to a second modification.

[0024] Fig.12 It is a diagram showing the structure of a detection circuit according to a third modification.

[0025] Fig.13 It is a diagram showing a specific example of the configuration of a detection circuit according to the third modification.

[0026] Fig.14 This is a diagram showing an example of the configuration of a detection circuit according to a fourth modification.

[0027] Fig.15 This is a diagram showing another example of the structure of the detection circuit involved in the fourth modification.

[0028] Fig.16 The structure of the detection circuit according to the fifth modification example will be described.

[0029] Fig.17 It is a diagram showing the structure of a detection circuit involved in the sixth modification.

[0030] Fig.18 It is a diagram showing the structure of the detection circuit involved in the 7th modification example.

[0031] Fig.19 It is a plan view showing the arrangement of components of the power amplifier module.

[0032] Fig. 20 It is a diagram showing the structure of a detection circuit involved in the eighth modification example.

[0033] Fig.21 It is a diagram showing a specific example of the structure of the detection circuit involved in the eighth modification.

[0034] Fig. 22 This is a diagram showing an example of the configuration on the substrate in the detection circuit involved in the eighth modification.

[0035] Fig.23 This is a diagram showing a specific example of the structure of a detection circuit involved in the ninth modification.

[0036] Fig.24 FIG. 1 is a diagram showing a structure of a power amplifier module according to another modified example. DETAILED DESCRIPTION

[0037] Hereinafter, each embodiment of the present disclosure will be described with reference to each drawing. Here, circuit elements with the same reference numerals represent the same circuit elements, and repeated descriptions are omitted.

[0038] (Structure of power amplifier module 1000)

[0039] Reference Figure 1, the structure of the power amplifier module involved in the first embodiment is described. Figure 1 1 is a diagram showing an example of the structure of the power amplifier module 1000 .

[0040] The power amplifier module 1000 is, for example, mounted on a mobile phone and used to amplify the power of a signal sent to a base station. The power amplifier module 1000 can, for example, amplify the power of signals of communication standards such as 2G (2nd generation mobile communication system), 3G (3rd generation mobile communication system), 4G (4th generation mobile communication system), 5G (5th generation mobile communication system), LTE (Long Term Evolution)-FDD (Frequency Division Duplex), LTE-TDD (Time Division Duplex), LTE-Advanced, and LTE-Advanced Pro. In addition, the communication standard of the signal amplified by the power amplifier module 1000 is not limited thereto.

[0041] like Figure 1 As shown, the power amplifier module 1000 amplifies an input signal RFin input from an input terminal 1001, and outputs an output signal RFout from an output terminal 1002. The input signal RFin is a radio frequency (RF: Radio-Frequency) signal, and the frequency of the input signal RFin is, for example, approximately several GHz.

[0042] Here, the power amplifier module 1000 includes, for example, a carrier amplifier 1100, a peak amplifier 1200, a detection circuit 1300, a distributor 1400, and a synthesizer 1500. Figure 1 As shown, the power amplifier module 1000 forms a Doherty amplifier circuit.

[0043] In a Doherty amplifier circuit, generally, a carrier amplifier 1100 and a peak amplifier 1200 are connected in parallel, wherein the carrier amplifier 1100 operates regardless of the power level of the input signal, and the peak amplifier 1200 is turned off when the power level of the input signal is low, and is turned on when the power level of the input signal is high. In the Doherty amplifier circuit, the peak amplifier 1200 is operated at a timing when the carrier amplifier 1100 is close to saturation. As a result, the Doherty amplifier circuit can improve efficiency compared to a conventional power amplifier circuit.

[0044] In the power amplifier module 1000 , the detection circuit 1300 described later appropriately detects the saturation state of the carrier amplifier 1100 , thereby enabling the peak amplifier 1200 to be operated at an appropriate timing.

[0045] The carrier amplifier 1100 is, for example, an amplifier that amplifies the signal RF1 output from the distributor 1400 and outputs a signal RF11. The carrier amplifier 1100 is, for example, biased to class A, class AB, or class B. That is, the carrier amplifier 1100 amplifies the input signal regardless of the power level of the input signal such as a small instantaneous input power, and outputs the amplified signal.

[0046] The peak amplifier 1200 is, for example, an amplifier that amplifies the signal RF2 output from the distributor 1400 and outputs a signal RF21. The peak amplifier 1200 is biased to class A, class AB, class B, or class C, for example.

[0047] The detection circuit 1300 is a circuit for detecting the signal level of the signal RF1 output from the carrier amplifier 1100. The signal level is, for example, a voltage. The detection circuit 1300 detects, for example, a signal indicating the signal level (hereinafter referred to as a “control signal D cont ”.) is output to the terminal P of the peak amplifier 1200. The peak amplifier 1200 is controlled by the control signal D cont becomes larger, increasing the gain.

[0048] As described above, in the power amplification module 1000 , when the carrier amplifier 1100 is saturated or starts to be saturated, the peak amplifier 1200 can be operated at an appropriate timing.

[0049] In addition, the detection circuit 1300 is not limited to outputting the control signal Dcont to the peak amplifier 1200. For example, the detection circuit 1300 may output the control signal Dcont to a bias circuit (not shown) of the peak amplifier 1200. cont In this case, the detection circuit 1300 controls the signal D cont The bias point of the peak amplifier 1200 is controlled.

[0050] The distributor 1400 distributes the signal RFin into, for example, a signal RF1 input to the carrier amplifier 1100 and a signal RF2 input to the peak amplifier 1200. Here, the phase of the signal RF2 is, for example, delayed by approximately 90 degrees relative to the phase of the signal RF1. The distributor 1400 may be, for example, a distributed constant circuit such as a coupled line 3dB coupler or a Wilkinson type distributor. In addition, the phrase "approximately 90 degrees" includes, for example, a range of 45 degrees to 135 degrees.

[0051] The synthesizer 1500 synthesizes, for example, the signal RF11 output from the carrier amplifier 1100 and passed through a phase shifter (not shown) and the signal RF21 output from the peak amplifier 1200 , and outputs the amplified signal Pout.

[0052] <<Modifications>>

[0053] exist Figure 1 In the figure, the power amplifier module 1000 includes a carrier amplifier 1100 and a peak amplifier 1200, and the detection circuit 1300 controls the signal D cont The output is sent to the peak amplifier 1200, but the present invention is not limited to this.

[0054] Below, refer to Figure 2 to Figure 6 , a modified example of the structure of the power amplifier module 1000 is described. Figure 2 to Figure 6 1 is a diagram showing a configuration of a power amplifier module 1000 according to a modification. Hereinafter, only the configuration different from the power amplifier module 1000 will be described.

[0055] like Figure 2 As shown in FIG. 1 , the power amplifier module 1000a according to the first variant further includes a carrier amplifier 1100a of a driver stage connected in series with the carrier amplifier 1100 and a peak amplifier 1200a of a driver stage connected in series with the peak amplifier 1200. In this case, the detection circuit 1300 detects, for example, the signal level of the signal RF11 output from the final-stage carrier amplifier 1100 and outputs a control signal D to the peak amplifier 1200a of the driver stage. cont .

[0056] Thus, the power amplification module 1000 a can operate the peak amplifier 1200 a and the peak amplifier 1200 at appropriate timing when the carrier amplifier 1100 is saturated or starts to be saturated.

[0057] like Figure 3 As shown, the power amplifier module 1000b according to the second variant further includes a carrier amplifier 1100b of a driver stage connected in series with the carrier amplifier 1100. In this case, the detection circuit 1300 detects the signal level of the signal RF11 output from the final stage carrier amplifier 1100, for example, and outputs a control signal D to the carrier amplifier 1100b of the driver stage. cont .

[0058] Thus, the power amplification module 1000b can appropriately control the operation of the carrier amplifier 1100b at an appropriate timing when the carrier amplifier 1100 is saturated or starts to be saturated.

[0059] like Figure 4 As shown, the power amplifier module 1000c according to the third modification further includes a peak amplifier 1200c of a driver stage connected in series with the peak amplifier 1200. In this case, the detection circuit 1300 detects the signal level of the signal RF21 output from the final stage peak amplifier 1200, and outputs a control signal D to the peak amplifier 1200c of the driver stage.cont .

[0060] Thus, the power amplification module 1000c can appropriately control the operation of the peak amplifier 1200c at an appropriate timing when the peak amplifier 1200 is saturated or starts to be saturated.

[0061] like Figure 5 As shown, the power amplifier module 1000d involved in the fourth modification does not have a Doherty amplifier circuit, and includes a final-stage amplifier 1100 and a driver-stage amplifier 1100d. In this case, the detection circuit 1300 detects the signal level of the signal RF output from the final-stage amplifier 1100, and outputs a control signal D to the driver-stage amplifier 1100d. cont .

[0062] Thus, the power amplification module 1000b can appropriately control the operation of the amplifier 1100d at the driver stage at an appropriate timing when the amplifier 1100 at the final stage is saturated or starts to be saturated.

[0063] like Figure 6 As shown, the power amplifier module 1000e involved in the fifth variation further includes a carrier amplifier 1100e of a driver stage connected in series with the carrier amplifier 1100. In this case, the detection circuit 1300 detects the signal level of the signal RF21 output from the peak amplifier 1200 of the final stage, for example, and outputs a control signal D to the carrier amplifier 1100e of the driver stage. cont .

[0064] Thus, the power amplification module 1000c can appropriately control the operation of the carrier amplifier 1100e at an appropriate timing when the peak amplifier 1200 is saturated or starts to be saturated.

[0065] (Structure of Detection Circuit 1300)

[0066] Next, refer to Figure 7 , Figure 8 , the structure of the detection circuit 1300 is described in detail. Figure 7 13 is a diagram showing an example of the configuration of the detection circuit 1300 . Figure 8 13 is a diagram showing a specific example of the configuration of the detection circuit 1300 .

[0067] In the following, the description will be given based on the configuration of the power amplifier module 1000 (Dougherty amplifier circuit) as an example.

[0068] In addition, the following description uses a bipolar transistor as an example. Here, the transistor may also be a FET (Field Effect Transistor). In this case, the emitter, collector, and base of the bipolar transistor can be respectively read as the source, drain, and gate of the FET for application.

[0069] Reference Figure 7 , the structure of the detection circuit 1300 is briefly described. Figure 7 As shown, the detection circuit 1300 includes an input terminal 1301 electrically connected to the output terminal of the carrier amplifier 1100 and a detection terminal 1302 for detecting a signal level of an output of the carrier amplifier 1100 .

[0070] The detection circuit 1300 includes, for example, an input terminal 1301 , a detection terminal 1302 , a comparison unit 1310 , a DC removal unit 1320 , and a detection unit 1330 .

[0071] The input terminal 1301 is, for example, a terminal electrically connected to the output terminal of the carrier amplifier 1100 .

[0072] The detection terminal 1302 is, for example, a terminal electrically connected to the terminal P of the peak amplifier 1200 . That is, the detection terminal 1302 is a terminal for detecting the signal level of the output in the carrier amplifier 1100 .

[0073] The comparison unit 1310 is, for example, a comparator, and outputs an output signal corresponding to a voltage input to one input terminal, with a reference voltage input to the other input terminal as a reference voltage.

[0074] Specifically, the comparison unit 1310 has, for example, two input terminals 1310a and 1310b and an output terminal 1310c. In the comparison unit 1310, one input terminal 1310a is electrically connected to the output terminal of the carrier amplifier 1100, and the other input terminal 1310b is electrically connected to the reference voltage V ref Electrical Connection: The output terminal 1310c of the comparison unit 1310 is electrically connected to a DC removal unit 1320 described later.

[0075] The DC removing unit 1320 removes the DC component of the output signal output from the comparing unit 1310. That is, the DC removing unit 1320 allows the high frequency component in the output signal to pass.

[0076] In the DC removal unit 1320 , for example, one terminal is electrically connected to the output terminal 1310 c of the comparison unit 1310 , and the other terminal is electrically connected to the detection unit 1330 described later.

[0077] The detection unit 1330 detects the output signal from which the DC component has been removed by the DC removal unit 1320. Here, the detection unit 1330 converts the output signal into a DC component and outputs a control signal D cont .

[0078] In the detection unit 1330 , for example, an input terminal is electrically connected to the other terminal of the DC removal unit 1320 , and an output terminal is electrically connected to the detection terminal 1302 .

[0079] In this way, the detection circuit 1300 can improve the delay in the response time of the comparison unit 1310 caused by the DC component by removing the DC component of the output signal output from the comparison unit 1310. In addition, the detection circuit 1300 can also suppress the change of the bias point of the detection unit 1330 by removing the DC component of the output signal output from the comparison unit 1310.

[0080] On the other hand, in the saturation detection circuit of Patent Document 1, a lot of time is required to stabilize the DC component of the output signal output from the comparator. In other words, in the saturation detection circuit, the DC component output from the comparator acts on the operation of the comparator itself, so a lot of time is required until the response stabilizes.

[0081] That is, the detection circuit 1300 has a structure for removing the DC component of the output signal of the comparison unit 1310, thereby preventing the output signal from affecting the operation of the comparison unit 1310. Therefore, the detection circuit 1300 has a significant effect of improving the delay in the application time of the comparison unit 1310 compared with the prior art.

[0082] Next, refer to Figure 8 , an example of a specific structure of the detection circuit 1300 is described.

[0083] like Figure 8 As shown, the comparison unit 1310 includes, for example, a transistor Q10. In the transistor Q10, for example, the emitter is electrically connected to the output terminal (for example, the collector) of the carrier amplifier 1100, and the base is electrically connected to the reference voltage V ref1 The collector of transistor Q10 is electrically connected to a terminal of DC removal unit 1320. The collector of transistor Q10 is electrically connected to power supply V via resistor R10. cc Electrical connection.

[0084] The DC removing unit 1320 removes the DC component output from the comparison unit 1310 that takes time to stabilize due to the influence of the operation of the comparison unit 1310 (the operation of the transistor Q10). Furthermore, the DC removing unit 1320 outputs the high-frequency component used as the detection signal to the detection unit 1330. That is, the DC removing unit 1320 performs DC separation between the comparison unit 1310 and the detection unit 1330 so that the DC component that takes time to stabilize does not act on the detection unit 1330. In this way, the detection circuit 1300 removes the DC component that takes time to stabilize and uses the high-frequency component as the detection signal. As a result, it is possible to eliminate the response delay that occurs when the DC component output from the comparison unit 1310 is used as the detection signal.

[0085] The DC removal unit 1320 includes, for example, a capacitor C20 . One terminal of the capacitor C20 is electrically connected to the collector of the transistor Q10 , and the other terminal of the capacitor C20 is electrically connected to the detection unit 1330 .

[0086] The detection unit 1330 includes, for example, a transistor Q30. The transistor Q30 is, for example, an emitter follower. The transistor Q30 generates a voltage according to a reference voltage V ref2 The conduction angle is adjusted, and a high-frequency component of a signal output from the DC removal unit 1320 is smoothed into a DC using a capacitor (not shown).

[0087] In the transistor Q30, the base is electrically connected to the other terminal of the capacitor C20 of the DC removal unit 1320, and the collector is electrically connected to the power supply V cc The emitter is electrically connected to the detection terminal 1302. Furthermore, in the transistor Q30, for example, the base is connected to the reference voltage V via the resistor R30. ref2 The emitter is electrically connected to the constant current source I1.

[0088] Next, an overview of the operation of the detection circuit 1300 will be described.

[0089] The collector of the emitter-grounded carrier amplifier 1100 is electrically connected to the detection circuit 1300. In this case, when the carrier amplifier 1100 is close to saturation, the instantaneous minimum voltage of the collector of the carrier amplifier 1100 becomes small (close to 0V). That is, in the detection circuit 1300, when the voltage (signal level) of the input signal RF11 input to the input terminal 1301 is lower than the reference voltage V ref1 During a short period, it becomes conductive.

[0090] Here, the angle of the period of being in the on state is represented by the angle range as the conduction angle, and the conduction angle increases as the input signal RF11 increases. As the conduction angle increases, the DC component of the output signal output from the comparison unit 1310 also increases. In the detection circuit 1300, the DC removal unit 1320 removes the DC component.

[0091] In the detection circuit 1300, the detection unit 1330 is used as an emitter follower. Therefore, the input impedance of the detection unit 1330 is high, so the input current can also be small. Since the input impedance of the detection unit 1330 is high, the input signal RF11 acts as a signal to operate the emitter follower, but does not directly act on the control signal D cont That is, in the detection circuit 1300, by configuring the detection unit 1330 as an emitter follower, the interaction of the alternating current between the comparison unit 1310 and the detection unit 1330 can be suppressed (the input impedance of the alternating current can be increased).

[0092] This means that even if the output impedance of the AC of the comparison unit 1310 is high, the interaction with the AC of the detection unit 1330 can be suppressed. For example, when the output impedance of the AC of the comparison unit 1310 is high and the input impedance of the AC of the detection unit 1330 is low, if the detection unit 1330 starts to operate, the input impedance of the comparison unit 1310 usually decreases. That is, the output of the AC of the comparison unit 1310 usually becomes unstable, but in the detection circuit 1300, the input impedance of the comparison unit 1310 is increased by using an emitter follower for the detection unit 1330, thereby stabilizing the output of the AC of the comparison unit 1310.

[0093] In addition, Figure 8 In the description, the comparison unit 1310 is described as being composed of a base-grounded transistor, but the present invention is not limited thereto. For example, the comparison unit 1310 may also be composed of an emitter-grounded transistor. That is, the comparison unit 1310 may also be a comparator that compares the relationship between the collector voltage and the base voltage of the transistor.

[0094] Specifically, the comparison unit 1310 realizes the function of the comparator by utilizing the following phenomenon: if the collector potential is lower than the base potential, the base-emitter voltage V be That is, the comparison unit 1310 may also be configured to bias the base of the transistor to a base-emitter voltage V be , so that if the collector potential is close to "0", the base current flows.

[0095] In this case, in the transistor of the comparison unit 1310, the emitter is electrically connected to the ground, the collector is electrically connected to the collector (output terminal) of the carrier amplifier 1100, and the base is electrically connected to the reference voltage V ref1is electrically connected to one terminal of the DC removing unit 1320 .

[0096] In this way, by using an emitter-grounded transistor for the comparison unit 1310, transistor failure can be reduced compared to the case where a base-grounded transistor is used. This is because when a base-grounded transistor is used, a large voltage is applied between the base and the emitter, whereas when an emitter-grounded transistor is used, a large voltage is not applied between the base and the emitter.

[0097] <<First Modification>>

[0098] Reference Fig. 9 , Fig.10 , the structure of the detection circuit 1300a involved in the first variant example is described. Fig. 9 1 is a diagram showing an example of the configuration of a detection circuit 1300 a according to the first modification. Fig.10 FIG. 1 is a diagram showing another example of the configuration of the detection circuit 1300 a according to the first modification.

[0099] The detection circuit 1300a is a detection circuit in which the detection circuit 1300 is set as a differential circuit. That is, the detection circuit 1300a is applied to the case where the carrier amplifier 1100 is composed of a differential circuit, for example. In the following, the carrier amplifier 1100 is described as including a positive-side carrier amplifier (not shown) and a negative-side carrier amplifier (not shown).

[0100] like Fig. 9 As shown, the detection circuit 1300 a includes comparison units 1311 and 1312 corresponding to the comparison unit 1310 , DC removal units 1321 and 1322 corresponding to the DC removal unit 1320 , and detection units 1331 and 1332 corresponding to the detection unit 1330 .

[0101] One input terminal 1311a of the comparison unit 1311 is electrically connected to the output terminal of the positive-side carrier amplifier, and the other input terminal 1311b is electrically connected to the reference voltage V ref The output terminal 1311 c of the comparison unit 1311 is electrically connected to the DC removal unit 1321 .

[0102] One input terminal 1312a of the comparison unit 1312 is electrically connected to the output terminal of the negative-side carrier amplifier, and the other input terminal 1312b is electrically connected to the reference voltage V ref The output terminal 1312 c of the comparison unit 1312 is electrically connected to the DC removal unit 1322 .

[0103] In the DC removal unit 1321 , for example, one terminal is electrically connected to the output terminal 1311 c of the comparison unit 1311 , and the other terminal is electrically connected to the detection unit 1331 .

[0104] In the DC removal unit 1322 , for example, one terminal is electrically connected to the output terminal 1312 c of the comparison unit 1312 , and the other terminal is electrically connected to the detection unit 1332 .

[0105] In the detection unit 1331 , for example, an input terminal is electrically connected to the other terminal of the DC removal unit 1321 , and an output terminal is electrically connected to the detection terminal 1302 .

[0106] In the detection unit 1332 , for example, an input terminal is electrically connected to the other terminal of the DC removal unit 1322 , and an output terminal is electrically connected to the detection terminal 1302 .

[0107] The detection circuit 1300a is composed of a differential circuit, so the leakage odd harmonic components cancel each other, which can suppress the influence of leakage on the circuit. Therefore, in the later stage of the detection circuit 1300a, the filter circuit for extracting the DC component can be omitted. Therefore, the detection circuit 1300a can further improve the delay of the response time.

[0108] Next, another example of the configuration of the detection circuit 1300a will be described.

[0109] like Fig.10 As shown, a detection circuit 1300a according to another example further includes current sources I2 and I3 in addition to the above-mentioned structure.

[0110] The current source I2 is a variable current source capable of adjusting the current and is electrically connected to an input terminal of the detection unit 1331 , for example.

[0111] The current source I3 is a variable current source capable of adjusting the current and is electrically connected to an input terminal of the detection unit 1332 , for example.

[0112] In the detection circuit 1300a, by providing the current sources I2 and I3, the current flowing through the resistors R31 and R32 can be finely adjusted without adjusting the reference voltage Vref2. Therefore, in the detection circuit 1300a, when the signals output from the comparison units 1311 and 1312 are very small, the conduction angles of the transistors Q31 and Q32 in the detection units 1331 and 1332 can be adjusted. In addition, the detection circuit 1300a can appropriately cope with the ambient temperature and the structure of the circuit connected to the subsequent stage.

[0113] In the above description, the detection circuit 1300 a is described as being applied to a case where the carrier amplifier 1100 is configured as a differential circuit, but the present invention is not limited to this.

[0114] For example, the detection circuit 1300a may also include a signal converter (not shown) that converts the signal RF11 output from the carrier amplifier 1100 into a differential signal. Specifically, the signal converter outputs the input signal RF11 as two signals with substantially opposite phases to each other. The signal converter includes, for example, a balanced-unbalanced transformer. In addition, the so-called "substantially opposite phases" is defined as having a phase difference of 135° to 225° relative to one signal.

[0115] Thus, the detection circuit 1300a formed of a differential circuit can be applied to the carrier amplifier 110 which is not a differential circuit. Therefore, in the detection circuit 1300a, the leaked odd-order harmonic components cancel each other, and the influence of the leakage on the circuit can be suppressed.

[0116] <<Second Modification>>

[0117] Reference Fig.11 , the structure of the detection circuit 1300b involved in the second variant example is described. Fig.11 It is a diagram showing the structure of a detection circuit 1300b according to a second modification.

[0118] The detection circuit 1300b is a detection circuit in which the DC removal unit 1320 of the detection circuit 1300 is constituted by a transformer. Fig.11 As an example, a transformer is shown. Fig. 9 The example of the DC removal units 1321 and 1322 of the detection circuit 1300a shown in FIG. Fig. 9 The differences between the detection circuit 1300a shown in the figure are described, and unless otherwise mentioned, it is assumed that the detection circuit is the same as the detection circuit 1300a.

[0119] like Fig.11 As shown, the detection circuit 1300b includes a DC removal unit 1320b formed of a transformer.

[0120] The DC removing unit 1320b includes a pair of input terminals 1320b1 and 1320b2 and a pair of output terminals 1320b3 and 1320d.

[0121] One input terminal 1320 b 1 of the DC removal unit 1320 b is electrically connected to the output terminal 1311 c of the comparison unit 1311 , and the other input terminal 1320 b 2 is electrically connected to the output terminal 1312 c of the comparison unit 1312 .

[0122] One output terminal 1320 b 3 of the DC removal unit 1320 b is electrically connected to the input terminal of the detection unit 1331 , and the other output terminal 1320 b 4 is electrically connected to the input terminal of the detection unit 1332 .

[0123] In the detection circuit 1300b, the DC removal unit 1320b is formed of a transformer, thereby removing the DC component and increasing the impedance of the load side of the comparison unit 1310 (hereinafter referred to as "high impedance"). The detection circuit 1300b realizes high impedance from the following two viewpoints.

[0124] First, there is a method of realizing the fundamental wave by impedance conversion using a transformer. Specifically, the number of windings of the winding on the comparison unit 1310 side of the transformer is made larger than the number of windings of the winding on the detection unit 1330 side, thereby obtaining a high impedance.

[0125] Second, even-order harmonics can be made high-impedance. In the detection circuit 1300a, although odd-order harmonic components cancel each other out through the differential circuit, there is no effect on even-order harmonics. In contrast, the DC removal unit 1320b composed of a transformer outputs a common-phase signal for even-order harmonics. That is, if the two input terminals 1320b1 and 1320b2 on the primary side of the transformer are excited with the same phase, no current flows and the impedance is made high.

[0126] As a result, in the detection circuit 1300 b , the impedance on the load side of the comparison units 1311 and 1312 can be increased, so that the interaction between the inside and the outside can be reduced, and the response time can be shortened.

[0127] Furthermore, in the detection circuit 1300b, the resistors R11 and R12 connected to the comparison units 1311 and 1312 can be replaced by the primary winding of the transformer. As a result, although a voltage drop caused by the DC component is generated in the resistors R11 and R12 in the detection circuit 1300a, in the detection circuit 1300b, the voltage drop caused by the DC component does not exist by replacing it with the inductor of the primary winding of the transformer. That is, the DC component on the load side of the comparison units 1311 and 1312 caused by the DC component does not change. Therefore, in the detection circuit 1300b, the bias point of the comparison units 1311 and 1312 (1310) can be fixed, and the response time can be accelerated.

[0128] In addition, the detection circuit 1300b may also be provided with Fig.10 In this case, the current source I2 is electrically connected to the input terminal of the detection unit 1331 , and the current source I3 is electrically connected to the input terminal of the detection unit 1332 .

[0129] <<Third Modification>>

[0130] Reference Fig.12 , Fig.13 , the structure of the detection circuit 1300c involved in the third variant example is described. Fig.12 It is a diagram showing the structure of a detection circuit 1300c according to a third modification. Fig.13 13 is a diagram showing a specific example of the configuration of a detection circuit 1300c according to the third modification.

[0131] The detection circuit 1300 c is a circuit including an amplifier 1340 between the DC removal unit 1320 and the detection unit 1330 , in contrast to the detection circuit 1300 .

[0132] like Fig.12 As shown, in the detection circuit 1300 c , one terminal of the DC removal unit 1320 is electrically connected to the output terminal of the comparison unit 1310 , and the other terminal is electrically connected to the input terminal of the amplifier 1340 . The output terminal of the amplifier 1340 is electrically connected to the input terminal of the detection unit 1330 .

[0133] In the detection circuit 1300c, the signal output from the comparison unit 1310 can be increased, so the signal input to the detection unit 1330 can be increased, and the control signal D output from the detection terminal 1302 can be increased. cont That is, the detection circuit 1300 c can monitor the saturation state of the carrier amplifier 1100 with good sensitivity.

[0134] Reference Fig.13 , an example of a specific structure of the detection circuit 1300c is described. Fig.13 As an example, it is shown in Fig.11 The example in which the amplifier 1340 is added to the detection circuit 1300b shown in FIG. 1300c is an example in which the differential amplifier 1340 is added to the detection circuit 1300b. Fig.11 The differences between the detection circuit 1300b shown in the figure are described, and unless otherwise mentioned, it is assumed that the detection circuit is the same as the detection circuit 1300b.

[0135] like Fig.13 As shown, the detection circuit 1300c includes an amplifier 1340 formed of transistors. The amplifier 1340 includes a transistor Q41 and a transistor Q42.

[0136] In the transistor Q41, for example, the base is electrically connected to one output terminal 1320b3 of the transformer of the DC removal unit 1320, the collector is electrically connected to the base of the detection unit 1331, and the emitter is electrically connected to the current source I4. In addition, the collector of the transistor Q41 is connected to the power supply V via the resistor R41. cc connect.

[0137] In the transistor Q42, for example, the base is electrically connected to the other output terminal 1320b4 of the transformer of the DC removal unit 1320, the collector is electrically connected to the base of the detection unit 1332, and the emitter is electrically connected to the current source I4. In addition, the collector of the transistor Q42 is electrically connected to the power supply V via the resistor R42. cc connect.

[0138] The detection circuit 1300c includes a differential amplifier 1340, which can remove the in-phase signal, so that a signal with excellent differential properties can be input to the detection unit 1330. This is effective when the gain of the amplifier on the positive side of the carrier amplifier 1100 is higher than that of the amplifier on the negative side (such as a design error of the transistor) and the effect of mutual cancellation in the differential circuit becomes small. That is, the detection circuit 1300c can output the control signal D without reducing the effect of mutual cancellation of the differential signal in the output of the detection unit 1330. cont .

[0139] In addition, Fig.13 In the above description, the DC removal unit 1320 is assumed to be composed of a transformer, but the present invention is not limited thereto. Fig.10 As shown, the DC removal unit 1320 is composed of a capacitor.

[0140] In this case, the base of the transistor Q41 is electrically connected to the other terminal of one capacitor (DC removing unit 1320 ) and the base of the transistor Q42 is electrically connected to the other terminal of the other capacitor (DC removing unit 1320 ).

[0141] <<Fourth Modification>>

[0142] Reference Fig.14 , Fig.15 , the structure of the detection circuit 1300d involved in the fourth variant is described. Fig.14 This is a diagram showing an example of the configuration of a detection circuit 1300d according to a fourth modification. Fig.15 FIG. 1 is a diagram showing another example of the configuration of the detection circuit 1300 d according to the fourth modification.

[0143] The detection circuit 1300 d is a circuit that includes an amplifier 1340 between the comparison unit 1310 and the DC removal unit 1320 , in contrast to the detection circuit 1300 .

[0144] like Fig.14 As shown, in the detection circuit 1300 d , the output terminal of the comparison unit 1310 is electrically connected to the input terminal of the amplifier 1340 d , and the output terminal of the amplifier 1340 is electrically connected to the input terminal of the DC removal unit 1320 .

[0145] In the detection circuit 1300d, the input terminal of the amplifier 1340 is directly connected to the output terminal of the comparison unit 1310, so that the output of the comparison unit 1310 and the bias of the amplifier 1340 can be made common, thereby reducing the circuit. In addition, in the detection circuit 1300d, the signal output from the comparison unit 1310 is input to the DC removal unit 1320 after being amplified by the amplifier 1340, so the capacitance of the DC removal unit 1320 can be reduced.

[0146] Reference Fig.15 , an example of a specific structure of the detection circuit 1300d is described. Fig.15 As an example, the following detection circuit is shown, that is, Fig. 9 The transistors Q11 and Q12 of the comparison unit 1310 in the detection circuit 1300a shown in FIG. 1 are set to ground the emitters, and an amplifier 1340 is added to the detection circuit 1300a. Fig. 9 The differences between the detection circuit 1300a shown in the figure are described, and unless otherwise mentioned, it is assumed that the detection circuit is the same as the detection circuit 1300a.

[0147] like Fig.15 As shown, the detection circuit 1300d includes a comparison unit 1310d and an amplifier 1340 composed of transistors.

[0148] The comparison unit 1310d includes a comparison unit 1311 to which a signal is input from a positive-side carrier amplifier and a comparison unit 1312 to which a signal is input from a negative-side carrier amplifier. The comparison unit 1311 includes, for example, a transistor Q11a, and the comparison unit 1312 includes, for example, a transistor Q12a.

[0149] In transistor Q11a, the collector (here, one input terminal) is electrically connected to the output terminal of the positive-side carrier amplifier, the emitter is electrically connected to the ground, and the base (here, the other input terminal) is electrically connected to the reference voltage V ref1 Furthermore, the base of the transistor Q11 a (here, the output terminal) is electrically connected to the base of the transistor Q11 a of the amplifier 1340 d.

[0150] In transistor Q12a, the collector (here, one input terminal) is electrically connected to the output terminal of the negative-side carrier amplifier, the emitter is electrically connected to the ground, and the base (here, the other input terminal) is electrically connected to the reference voltage V ref1 Furthermore, the base of the transistor Q12a (here, the output terminal) is electrically connected to the base of the transistor Q12a of the amplifier 1340d.

[0151] The amplifier 1340d includes a transistor Q51 and a transistor Q52.

[0152] In the transistor Q51, for example, the base is electrically connected to the base of the transistor Q11a of the comparison unit 1310d, the collector is electrically connected to one terminal of the DC removal unit 1321, and the emitter is electrically connected to the ground. In addition, the collector of the transistor Q11a is connected to the power supply V via the resistor R51. cc connect.

[0153] In the transistor Q52, for example, the base is electrically connected to the base of the transistor Q12a of the comparison unit 1310d, the collector is electrically connected to one terminal of the DC removal unit 1322, and the emitter is electrically connected to the ground. In addition, the collector of the transistor Q12a is connected to the power supply V via the resistor R52. cc connect.

[0154] When the comparator 1310 is emitter-grounded, the effect of reducing transistor failure is achieved. On the other hand, the following situation can be imagined, that is, the increase in the base current of the comparator 1310 is small, and only a signal level that is insufficient to pass through the DC removal unit 1320 and drive the detection unit 1330 can be obtained.

[0155] Therefore, in the detection circuit 1300d, by providing the amplifier 1340d after the comparison unit 1310, the signal output from the comparison unit 1310 can be amplified to drive the detection unit 1330. That is, in the detection circuit 1300d, the failure of the transistor can be reduced and the detection unit 1330 can be driven reliably.

[0156] In the above description, as an example, the detection circuit 1300a is provided with the amplifier 1340, but the present invention is not limited to this. Fig.11 The DC removal unit 1320 shown is formed by adding an amplifier 1340 to the detection circuit 1300 b formed of a transformer.

[0157] In this case, in the transistor Q51, for example, the base is electrically connected to the base of the transistor Q11a of the comparison unit 1310d, and the collector is electrically connected to one input terminal (for example, Fig.11 The input terminal 1320b1) is electrically connected, and the emitter is electrically connected to ground.

[0158] In addition, in the transistor Q52, for example, the base is electrically connected to the base of the transistor Q12a of the comparison unit 1310d, and the collector is electrically connected to the other input terminal (for example, Fig.11 The input terminal 1320b2 is electrically connected to the emitter and the ground.

[0159] <<Fifth Modification>>

[0160] Reference Fig.16 , the structure of the detection circuit 1300e involved in the fifth variant is described. Fig.16 It is a diagram showing the structure of a detection circuit 1300e involved in the fifth modification.

[0161] When the carrier amplifier 1100 has a differential output, the detection circuit 1300 e removes a DC component by connecting a differential amplifier circuit to the output terminals of the pair of comparison units 1311 and 1312 .

[0162] Specifically, the detection circuit 1300e includes a differential amplifier circuit 1320e as a DC removal unit that removes a DC component.

[0163] The differential amplifier circuit 1320e includes transistors Q61-Q64 and resistors R61-R64.

[0164] In transistor Q61, the base is connected to the reference voltage V through resistor R62. ref1 The emitter is electrically connected to the current source I6 , and the collector is electrically connected to the input terminal of the detection unit 1331 (the base of the transistor Q31 ).

[0165] The transistor Q62 is a transistor having a base and a collector connected in a diode manner. The base and the collector are electrically connected to the base of the transistor Q61 , and the emitter is electrically connected to the base of the comparison unit 1311 .

[0166] In transistor Q63, the base is connected to the reference voltage V through resistor R64. ref1 The emitter is electrically connected to the current source I6 , and the collector is electrically connected to the input terminal of the detection unit 1332 (the base of the transistor Q32 ).

[0167] The transistor Q64 is a transistor having a base and a collector connected in a diode manner. The base and the collector are electrically connected to the base of the transistor Q63 , and the emitter is electrically connected to the base of the comparison unit 1312 .

[0168] In addition, the collector of the transistor Q61 is electrically connected to the reference voltage Vref via the resistor R61, and the collector of the transistor Q64 is electrically connected to the reference voltage Vref via the resistor R63.

[0169] Here, each of the transistor Q62 and the transistor Q64 is a transistor for increasing the voltage of each of the transistor Q61 and the transistor Q63 by the voltage indicated by the current source I6 , for example.

[0170] In addition, although the reference voltage V ref1The bias of the comparison unit 1311 and the transistor Q61 and the bias of the comparison unit 1312 and the transistor Q63 are realized, but the present invention is not limited thereto. The bias of the comparison unit 1311 and the transistor Q61 and the bias of the comparison unit 1312 and the transistor Q63 may be set separately. That is, a bias circuit may be set in each transistor. In this case, the transistor Q62 and the transistor Q64 that increase the voltage shown by the current source I6 may be replaced by capacitors that allow high-frequency signals to pass.

[0171] In the detection circuit 1300 e , a differential amplifier circuit having a large in-phase component removal ratio is used to remove the DC component, thereby being able to output an appropriate signal for detecting the saturation of the carrier amplifier 1100 to the detection unit 1330 .

[0172] <<Sixth Modification>>

[0173] Reference Fig.17 , the structure of the detection circuit 1300f involved in the 6th variant example is explained. Fig.17 It is a diagram showing the structure of a detection circuit 1300f involved in the sixth modification.

[0174] The detection circuit 1300f is a circuit in which, compared with the detection circuit 1300e, a capacitor for removing a DC component is provided between the differential amplifier circuit 1320f and the comparison unit 1310, and the differential amplifier circuit 1320f and the comparison unit 1310 are biased respectively by different bias circuits.

[0175] The base of the transistor Q11 a of the comparison unit 1311 is electrically connected to the base of the transistor Q71 of the differential amplifier circuit 1320 f via the capacitor C71 .

[0176] In addition, the base of the transistor Q11a is electrically connected to the emitter of the transistor Q81 via the resistor R81. Furthermore, the base of the transistor Q81 is electrically connected to the reference voltage V ref1 Electrical connection, collector and power supply V cc Electrical connection.

[0177] The base of transistor Q71 of differential amplifier circuit 1320f is connected to reference voltage V ref3 The emitter is electrically connected to the current source I7, and the collector is electrically connected to the power supply V cc Electrical connection.

[0178] The base of the transistor Q12a of the comparison unit 1311 is electrically connected to the base of the transistor Q72 of the differential amplifier circuit 1320f via the capacitor C72.

[0179] In addition, the base of transistor Q12a is electrically connected to the emitter of transistor Q82 via resistor R82. Furthermore, the base of transistor Q82 is electrically connected to the reference voltage V via resistor R84. ref1 Electrical connection, collector and power supply V cc Electrical connection.

[0180] The base of transistor Q72 of differential amplifier circuit 1320f is connected to reference voltage V ref3 The emitter is electrically connected to the current source I7, and the collector is electrically connected to the power supply V cc Electrical connection.

[0181] That is, the reference voltage V ref1 A bias is supplied to a node N1 between the output terminal (base) of the comparison unit 1311 and the capacitor C71 through the transistor Q81 , and a bias is supplied to a node N2 between the output terminal (base) of the comparison unit 1312 and the capacitor C72 through the transistor Q82 .

[0182] In the detection circuit 1300f, a capacitor is provided between the differential amplifier circuit 1320f and the comparison unit 1310 to remove a DC component, and the differential amplifier circuit 1320f and the comparison unit 1310 are biased by different bias circuits.

[0183] Thus, in the detection circuit 1300f, by providing the capacitors C71 and C72, it is possible to prevent the output of the comparison unit 1310 from flowing into the bias circuit of the differential amplifier circuit 1320f and causing the bias point of the differential amplifier circuit 1320f to change. In addition, in the detection circuit 1300f, the emitter currents of the transistors Q81 and Q82 as emitter followers are supplied to the nodes N1 and N2 as bias currents, respectively. Therefore, for example, even when the comparison units 1311 and 1312 and the detection units 1331 and 1332 share a part of the bias circuit, it is possible to prevent malfunctions via the bias circuit. In this regard, since the base currents of the transistors Q81 and Q82 as emitter followers are significantly smaller than the emitter currents of the transistors Q81 and Q82, in the detection circuit 1300f, the influence on the bias circuit can be reduced, and thus malfunctions via the bias circuit can be reduced.

[0184] in addition, Fig.17 The capacitors C81 and C82 shown are coupling capacitors, and the detection circuit 1300f may include the capacitors C81 and C82 or may not include the capacitors C81 and C82.

[0185] <<7th Modification>>

[0186] Reference Fig.18, the structure of the detection circuit 1300g involved in the 7th variant example is explained. Fig.18 It is a diagram showing the structure of a detection circuit 1300g involved in the seventh modification example.

[0187] Fig.18 The following diagram specifically shows the transistor as an example. Fig.17 The current sources I1 and I6 in the detection circuit 1300f shown in FIG. ref1 、V ref2 、V ref3 structure.

[0188] Compared with the detection circuit 1300f, the detection circuit 1300g further includes an amplifier circuit 1350 and capacitors C91 and C92.

[0189] The amplifier circuit 1350 amplifies the signal output from the detection unit 1330 and outputs the control signal D. cont The amplifier circuit 1350 includes, for example, a transistor Q90 and a resistor R90.

[0190] The base of the transistor Q90 is electrically connected to the output terminal of the detection unit 1330 (the collectors of the transistors Q31 and Q32 ), the emitter is connected to the ground via the resistor R90 , and the collector is electrically connected to the detection terminal 1302 .

[0191] The resistor R90 is a resistor element provided to prevent the base-emitter voltage of the transistor Q90 from becoming excessively high. The amplifier circuit 1350 can prevent the transistor Q90 from malfunctioning by providing the resistor R90.

[0192] The detection circuit 1300g is provided with an amplifier circuit 1350 so as to convert the control signal D cont Since the signal level is set to an appropriate level, the saturation of the carrier amplifier 1100 (the final amplifier) ​​can be appropriately detected. In addition, in the detection circuit 1300g, the reference voltage V ref1 、V ref2 、V ref3 The structure (hereinafter referred to as "reference voltage transistor Tv") adopts a structure that utilizes the base-emitter threshold voltage of a diode-connected transistor. The base-emitter threshold voltage of transistor Q90 changes in the same manner as the base-emitter threshold voltage of the reference voltage transistor Tv. Therefore, in the detection circuit 1300g, even when the temperature changes, the collector current flowing through the transistor Q90 can be made substantially constant.

[0193] In addition, the amplifier circuit 1350 is described as being included in the detection circuit 1300g, but the present invention is not limited to this. For example, the amplifier circuit 1350 may be configured to receive the control signal D cont The control signal D in the bias circuit of the action (for example, the bias circuit of the peak amplifier) cont In addition, for example, the amplifier circuit 1350 can also be configured as a control signal D in a variable gain amplifier (eg, a peak amplifier). cont The receiving part.

[0194] Capacitors C91 and C92 are capacitors for canceling out the parasitic capacitances of transistors Q11 and Q12. Fig.18 In FIG. 1 , parasitic capacitances are hypothetically represented by C93 and C94.

[0195] One end of the capacitor C91 is electrically connected to the collector (one input terminal here) of the transistor Q11 a in the comparison unit 1311 , and the other end is electrically connected to the base (an output terminal here) of the transistor Q12 a in the comparison unit 1312 .

[0196] One end of the capacitor C92 is electrically connected to the collector (here, one input terminal) of the transistor Q12 a in the comparison unit 1312 , and the other end is electrically connected to the base (here, output terminal) of the transistor Q11 a in the comparison unit 1311 .

[0197] Due to parasitic capacitance, transistors Q11 and Q12 may output excessively large output signals even though the signal level of carrier amplifier 1100 is low. This is caused by the input signals of comparison units 1311 and 1312 leaking through parasitic capacitance as output signals.

[0198] In the detection circuit 1300g, by providing the capacitors C91 and C92, it is possible to cancel out the signal leaking to the output through the parasitic capacitance, thereby suppressing malfunction due to the leakage.

[0199] As described above, providing capacitors C91 and C92 in the circuit for detecting saturation to cancel out leakage caused by input from a differential amplifier (for example, a differential carrier amplifier) ​​can be considered to achieve a significant effect compared to the prior art.

[0200] <<Configuration of components>>

[0201] Reference Fig.19 , the configuration of the components of the power amplifier module 1000 is described. Fig.19 1 is a plan view showing the arrangement of components of the power amplifier module 1000 .

[0202] As an example, the detection circuit is assumed to have Fig.18 In addition, for convenience, Fig.18 The multiple transistors constituting the current source are collectively referred to as "current source transistors Ti", and the multiple transistors generating the reference voltage are collectively referred to as "reference voltage transistors Tv".

[0203] exist Fig.19 In FIG. 1 , as an example, the main heat generation area on the semiconductor substrate is shown by a dotted line. Specifically, Fig.19 , region r100 of the amplifier of the driver stage of the carrier amplifier, region r110 of one carrier amplifier in the differential pair, region r120 of the other carrier amplifier in the differential pair, region r130 of the amplifier of the driver stage of the peak amplifier, region r140 of one peak amplifier in the differential pair, region r150 of the other peak amplifier in the differential pair, and region r160 of the detection circuit 1300g are shown.

[0204] In the power amplifier module 1000, the detection circuit 1300g may be arranged near the final-stage carrier amplifier 1100. On the other hand, the final-stage carrier amplifier 1100 has high power consumption, so the temperature near the final-stage carrier amplifier 1100 becomes high.

[0205] The current and voltage of the current source transistor Ti and the reference voltage transistor Tv in the detection circuit 1300g vary due to temperature changes. This is because the base-emitter voltage of the current source transistor Ti and the reference voltage transistor Tv depends on temperature.

[0206] That is, when the current source transistor Ti and the reference voltage transistor Tv undergo different temperature changes, the control signal D output from the detection terminal 1302 is cont Become unstable.

[0207] Therefore, in the detection circuit 1300g, the current source transistor Ti and the reference voltage transistor Tv are arranged on the semiconductor substrate so that the current source transistor Ti and the reference voltage transistor Tv respectively undergo the same temperature change. The arrangement relationship between the current source transistor Ti and the reference voltage transistor Tv will be specifically described below.

[0208] When the detection circuit 1300g detects the saturation of a carrier amplifier in the differential pair of the output stage, the distance between the center portion Pce1 of the plurality of transistors forming the carrier amplifier and the reference voltage transistor Tv is set to D1. In addition, the distance between the center portion Pce1 and the current source transistor Ti is set to D2. In the detection circuit 1300g, the current source transistor Ti and the reference voltage transistor Tv are configured to satisfy the condition of the following formula (1). That is, the current source transistor Ti and the reference voltage transistor Tv are configured to satisfy the following condition: the value obtained by dividing the absolute value of the difference between the distance D1 and the distance D2 by the value obtained by adding the distance D1 and the distance D2 is less than "1".

[0209] (Mathematical formula 1)

[0210] |D1-D2| / (D1+D2)<1…(1)

[0211] The central portion Pce1 is, for example, the central point of a region formed by a plurality of transistors. Alternatively, the central portion Pce1 may be, for example, a region including the central point. That is, the central portion Pce1 is the portion of the heat source that generates the most heat.

[0212] D1 is, for example, the distance between the center portion Pce1 and the transistor closest to the center portion Pce1 among the transistors constituting the reference voltage transistor Tv. Alternatively, D1 may be, for example, the distance between the center portion Pce1 and the center point of the region of the reference voltage transistor Tv.

[0213] D2 is, for example, the distance between the center portion Pce1 and the transistor closest to the center portion Pce1 among the transistors constituting the current source transistor Ti. Alternatively, D2 may be, for example, the distance between the center portion Pce1 and the center point of the region of the current source transistor Ti.

[0214] In this manner, the detection circuit 1300g is configured so that the difference in distance between each of the current source transistor Ti and the reference voltage transistor Tv and one of the carrier amplifiers in the differential pair of the output stage becomes small.

[0215] Here, when the detection circuit 1300g satisfies the condition of formula (1), the configuration relationship between the current source transistor Ti and the reference voltage transistor Tv and an amplifier other than a carrier amplifier in the differential pair of the output stage (for example, another carrier amplifier in the differential pair of the output stage, a peak amplifier in the differential pair of the output stage, etc.) also satisfies the condition of formula (1).

[0216] That is, in the detection circuit 1300g, when the current source transistor Ti and the reference voltage transistor Tv and at least one of the heat sources are arranged to satisfy equation (1), the influence of the heat source on the current source transistor Ti and the reference voltage transistor Tv can be made equal.

[0217] <<Variation 8>>

[0218] Reference Fig. 20 , the structure of the detection circuit 1300h involved in the 8th variant example is described. Fig. 20 It is a diagram showing the structure of a detection circuit 1300h involved in the eighth modification.

[0219] The detection circuit 1300h is, for example, a circuit that Fig.14 The detection circuit 1300d shown in the figure has an amplifier 1360 and a DC removal unit 1370 (intermediate DC removal unit) added to the previous stage of the amplifier 1340. Furthermore, the detection circuit 1300h has, for example, a feedback circuit 1380 for feeding back the signal output from the amplifier 1340 to the input of the amplifier 1360. The detection circuit 1300h is a circuit that feeds back the signal output from the amplifier 1340 to the input of the amplifier 1360. Fig.15 The circuit in which the transistors Q31 and Q32 in the detection circuit 1300d are configured as emitter followers is changed so that the control signal D is output from the collectors of the transistors Q31 and Q32. cont .

[0220] like Fig. 20 As shown, in the detection circuit 1300h, the output terminal of the comparison unit 1310 is electrically connected to the input terminal of the amplifier 1360, the output terminal of the amplifier 1360 is electrically connected to one terminal of the DC removal unit 1370, and the other terminal of the DC removal unit 1370 is electrically connected to the input terminal of the amplifier 1340. In addition, the output terminal of the amplifier 1340 is electrically connected to one terminal of the feedback circuit 1380, and the other terminal of the feedback circuit 1380 is electrically connected to the input terminal of the amplifier 1360.

[0221] In the detection circuit 1300h, the detection sensitivity is improved by configuring the amplifier with two stages. In addition, the detection circuit 1300h can suppress the temperature dependence of the current amplification factor of the amplifiers 1340 and 1360 by including the feedback circuit 1380. This is because the current amplification factor of the amplifier circuit in which the output signal is fed back to the input does not depend on the temperature change, but is determined by the feedback signal strength.

[0222] Reference Fig.21 , an example of a specific structure of the detection circuit 1300h is described. Fig.21FIG. 1 is a diagram showing a specific example of the structure of the detection circuit 1300h according to the eighth modification. Fig.15 The differences between the detection circuit 1300d shown in FIG. 1 and FIG. 13 are described below, and unless otherwise specified, the detection circuit 1300d is assumed to be the same as the detection circuit 1300d. Fig.21 As an example, a transistor is used to specifically illustrate Fig.15 The current sources I1 and I6 in the detection circuit 1300d shown in FIG. 1 and the reference voltage V ref1 、V ref2 (hereinafter collectively referred to as “reference voltage”).

[0223] like Fig.21 As shown, the detection circuit 1300h includes an amplifier 1360, a DC removal unit 1370, and a feedback circuit 1380.

[0224] The amplifier 1360 includes transistors Q91 ˜ Q94 and resistors R91 ˜ R94 .

[0225] In transistor Q91, a reference voltage is supplied to the base, an emitter is electrically connected to the base of transistor Q11a of comparison unit 1311, and a collector is connected to power supply Vcc via resistor R91. The emitter of transistor Q91 is electrically connected to ground via transistor Q93.

[0226] In transistor Q92, the reference voltage is supplied to the base, the emitter is electrically connected to the base of transistor Q12a of comparison unit 1312, and the collector is connected to power supply Vcc via resistor R93. The emitter of transistor Q92 is electrically connected to ground via transistor Q94.

[0227] The DC removal unit 1370 includes a DC removal unit 1371 and a DC removal unit 1372. The DC removal unit 1371 includes a capacitor C73, and the DC removal unit 1372 includes a capacitor C74. One terminal of the capacitor C73 is electrically connected to the collector of the transistor Q91, and the other terminal is electrically connected to the base of the transistor Q51 of the amplifier 1340. One terminal of the capacitor C74 is electrically connected to the collector of the transistor Q92, and the other terminal is electrically connected to the base of the transistor Q52 of the amplifier 1340.

[0228] The feedback circuit 1380 includes a feedback circuit 1381 and a feedback circuit 1382. The feedback circuit 1381 is formed by connecting a capacitor C75 and a resistor R75 in series, for example. One end of the feedback circuit 1381 is electrically connected to the collector of the transistor Q51, and the other end is electrically connected to the emitter of the transistor Q91. One end of the feedback circuit 1382 is electrically connected to the collector of the transistor Q52, and the other end is electrically connected to the emitter of the transistor Q92.

[0229] As described above, in the detection circuit 1300h, a bias is supplied to the base of the transistor Q11a of the comparison section 1311 through the transistor Q91, and a bias is supplied to the base of the transistor Q12a of the comparison section 1311 through the transistor Q92. That is, the transistors Q91 and Q92 supply biases to the comparison sections 1311 and 1312, respectively, and amplify the signals outputted from the comparison sections 1311 and 1312, respectively, and send the signals to the subsequent detection sections 1331 and 1332, respectively. Therefore, in the detection circuit 1300h, one transistor (here, each of the transistors Q91 and Q92) is used for bias supply and signal amplification, thereby reducing the scale of the circuit.

[0230] In addition, in the detection circuit 1300h, the transistor Q91 and the transistor Q92 are electrically connected to the ground via the transistor Q93 and the transistor Q94, respectively. By providing the transistor Q93 and the transistor Q94, it is possible to extract current from the emitter of the transistor Q91 and the emitter of the transistor Q92, respectively, using the collector current of the transistors Q93 and Q94. That is, it is possible to make an appropriate bias current flow through the transistor Q91 and the transistor Q92. Therefore, the current amplification factor of each of the transistors Q91 and the transistor Q92 can be maintained relatively high, and the signal amplification characteristics based on the aforementioned transistors Q91 and Q92 can be well performed.

[0231] In addition, in the transistor Q31 in the detection unit 1330, the base is connected in series with the capacitor C21 of the DC removal unit 1320, the emitter is electrically connected to the ground, and the collector is electrically connected to the detection terminal 1302. In addition, in the transistor Q32 in the detection unit 1330, the base is connected in series with the capacitor C22 of the DC removal unit 1320, the emitter is electrically connected to the ground, and the collector is electrically connected to the detection terminal 1302. That is, the detection unit 1330 combines the signal output from the collector of the transistor Q31 (the first control signal) and the signal output from the collector of each transistor Q32 (the second control signal), and outputs the control signal D from the detection terminal 1302. cont In addition, the transistors Q31 and Q32 use, for example, a capacitor (not shown) for smoothing high-frequency signals to smooth the high-frequency components and output the smoothed direct current. The collectors of the transistors Q31 and Q32 are connected to the detection terminal 1302, thereby reducing the size of the filter circuit (not shown) connected to the detection terminal 1302.

[0232] Furthermore, the capacitors C95 and C96 provided in the comparison section 1311 and the comparison section 1312 are capacitors for canceling out the parasitic capacitances of the transistor Q11 a and the transistor Q12 .

[0233] <<Configuration on the board>>

[0234] Reference Fig. 22 , the configuration in the substrate of the detection circuit 1300h involved in the 8th variant example is described. Fig. 22 This is a diagram showing an example of the arrangement on the substrate of the detection circuit 1300h according to the eighth modification. Fig. 22 This is a top view of the detection circuit 1300h arranged on the substrate from a direction perpendicular to the substrate surface. In addition, below, as an example, the arrangement in the substrate of the detection circuit 1300h involved in the eighth modification is described, but the same is also applicable to, for example, the detection circuits 1300d, 1300e, 1300f, and 1300g.

[0235] The detection circuit 1300h is configured to avoid magnetic field coupling between wiring LN1 and wiring LN2 and wiring LN3 and wiring LN4 respectively. Wiring LN1 and wiring LN2 are wirings between transistor Q11a (third transistor) and transistor Q12a (fourth transistor) and input terminals 1311a and input terminals 1312a respectively, and wiring LN3 and wiring LN4 are wirings between transistor Q11 and transistor Q12 and output terminals 1311c and output terminals 1312c respectively.

[0236] The detection circuit 1300h uses the signal flowing through the wiring LN3 and the wiring LN4 connected to the base of the transistor as a signal for outputting the control signal D cont Here, the current flowing through the base of the transistor is a weak current. On the other hand, the current flowing through the collector of the transistor is a significantly larger current than the current flowing through the base. The following problem occurs, that is, the large currents flowing through the wiring LN1 and the wiring LN2 flow through the wiring LN3 and the wiring LN4 respectively through magnetic field coupling. In this case, the detection unit 1330 outputs the control signal D in the state where the carrier amplifier 1100 is not saturated. cont Therefore, the detection circuit 1300h is arranged on the substrate so as not to cause the above-mentioned malfunction.

[0237] Here, in the transistor Q11a, the collector is electrically connected to the input terminal 1311a to which the signal RF11 output from the carrier amplifier 1100 is input, the emitter is electrically connected to the ground, and the base is electrically connected to the output terminal 1311c (with the output terminal 1311c of the comparison unit 1311). Fig.21 The terminal connected to the base of the transistor Q31 and the base of the transistor Q51 is electrically connected.

[0238] In addition, in the transistor Q12a, the collector is electrically connected to the input terminal 1312a to which the signal RF12 output from the other carrier amplifier 1100 is input, the emitter is electrically connected to the ground, and the base is electrically connected to the output terminal 1312c of the comparison unit 1312 (with the output terminal 1312c of the comparison unit 1312). Fig.21 The terminal connected to the base of the transistor Q32 and the base of the transistor Q52 is electrically connected.

[0239] like Fig. 22 As shown, the transistor Q11a is provided in a plan view inside a region R surrounded by a ground wiring GLN electrically connected to the ground layer GND. The transistor Q12a is provided in a plan view inside a region R surrounded by a ground wiring GLN electrically connected to the ground layer GND.

[0240] On the other hand, the input terminal 1311a is provided outside the region R surrounded by the ground wiring GLN. Furthermore, the input terminal 1312a is provided outside the region R surrounded by the ground wiring GLN.

[0241] In other words, the ground wiring GLN is provided to electromagnetically shield the wirings LN3 and LN4 from the wirings LN1 and LN2, for example. The wirings LN3 and LN4 are connected to the bases of the transistors Q11a and Q12a, respectively. The wirings LN1 and LN2 are connected to the collectors of the transistors Q11a and Q12a, respectively.

[0242] In this way, the detection circuit 1300h is configured on the substrate such that the ground wiring GLN electromagnetically shields the wirings LN1 and LN2 from the wirings LN3 and LN4, the wirings LN1 and LN2 are connected to the collectors of the transistors Q11a and Q12a, and the wirings LN3 and LN4 are connected to the bases of the transistors Q11a and Q12a, respectively. Thus, malfunction of the detection circuit 1300h can be prevented.

[0243] In addition, Fig. 22 In the figure, the ground wiring GLN surrounds both the transistor Q11a and the transistor Q12a, but the present invention is not limited thereto. For example, the ground wiring GLN may surround the transistor Q11a and the transistor Q12a independently. The ground layer GND is provided, for example, on a layer different from the wirings LN1 to LN4.

[0244] Furthermore, the transistor Q11a is provided so that the length L1 in the wiring LN1 inside the region R surrounded by the ground wiring GLN when viewed from above is shorter than the length L2 in the wiring LN1 outside the region R when viewed from above. Similarly, the transistor Q12a is provided so that the length in the wiring LN1 inside the region R when viewed from above is shorter than the length in the wiring LN1 outside the region R when viewed from above. Thus, malfunction of the detection circuit 1300h can be prevented more reliably.

[0245] <<9th Modification>>

[0246] Below, refer to Fig.23 , the structure of the detection circuit 1300i involved in the 9th variant example is explained. Fig.23 It is a diagram showing the structure of a detection circuit 1300i involved in the ninth modification. Fig.23 (b) Fig.23 (c) is a plan view of the detection circuit 1300 i viewed from the upper surface, and is a schematic diagram for understanding the extension of each wiring.

[0247] like Fig.23 As shown in (a), for example, relative to Fig.21 The detection circuit 1300h and the detection circuit 1300i shown in the figure are configured such that the current source transistor Ti connected in series between the emitters of the transistors Q51 and Q52 constituting the amplifier 1340 and the ground includes a transistor Ti1 and a transistor Ti2 whose collectors are connected to each other.

[0248] In addition, Fig.23 In the example, the collector of the output of the final-stage amplifier 1100 formed of a differential circuit is connected to the input of the detection circuit 1300i. The emitters of the final-stage amplifiers 1100 are electrically connected to the ground wiring. In addition, the positive side of the final-stage amplifier 1100 is set as the amplifier 1110, and the negative side is set as the amplifier 1120 for description.

[0249] When the current source transistor Ti is formed by a single transistor, the emitters of the final-stage amplifiers 1110 and 1120, which are respectively connected to the input of the detection circuit 1300i, need to be connected to the emitter of the same current source transistor Ti on the substrate. Fig.23 As shown in (b), the ground wiring LN5 connecting the emitter of the negative-side amplifier 1120 and the emitter of the current source transistor Ti, and the ground wiring LN6 connecting the emitter of the positive-side amplifier 1110 and the emitter of the current source transistor Ti need to be routed for a certain distance. Therefore, when the current source transistor Ti is provided in common with the transistors Q51 and Q52, the ground wiring LN5 and LN6 connecting the respective transistors and the current source transistor Ti may be coupled with other wiring included in the detection circuit 1300i, thereby causing the detection circuit 1300i to malfunction.

[0250] In contrast, in Fig.23When the current source transistor Ti is composed of independent transistors Ti1 and Ti2 whose collectors are connected to each other as shown in (a), the transistors Ti1 and Ti2 can be arranged adjacent to the amplifier connected to the input of the detection circuit 1300i on the substrate. Fig.23 As shown in (c), the wiring LN7 connecting the emitter of the transistor Ti1 and the emitter of the negative amplifier 1120 and the wiring LN8 connecting the emitter of the transistor Ti2 and the emitter of the positive amplifier 1110 can be provided at relatively short distances. Therefore, these wirings LN7 and LN8 become less likely to be coupled with other wirings included in the detection circuit 1300i, and it becomes easy to suppress malfunction of the detection circuit 1300i.

[0251] In addition, in Fig.23 When the current source transistor Ti is formed by independent transistors Ti1 and Ti2 whose collectors are connected to each other as shown in (a), the collector current flowing through the transistor Ti1 and the collector current flowing through the transistor Ti2 are added at the collectors connected to each other. Therefore, even if the currents flowing through the transistors Ti1 and Ti2 are unbalanced, the imbalance can be eliminated by adding the currents, so the amplifier connected to the input of the detection circuit 1300i operates in a balanced state. As a result, it becomes easier to suppress malfunction of the detection circuit 1300i.

[0252] Furthermore, when the current source transistor Ti is formed by independent transistors Ti1 and Ti2 whose collectors are connected to each other, both the current transistors Ti1 and Ti2 are connected to both the transistors Q51 and Q52. Therefore, even if the amplifier connected to the input of the detection circuit 1300i performs an unbalanced operation for some reason, the influence of the unbalanced operation is dispersed to the transistors Ti1 and Ti2, and as a result, the characteristic variation of the amplifier 1340 can be suppressed.

[0253] <<Other Modifications of Power Amplifier Module>>

[0254] Below, refer to Fig.24 , other variations of the structure of the power amplifier module 1000 are described. Fig.24 1 is a diagram showing a configuration of a power amplifier module 1000f according to another modification. Hereinafter, only the configuration that is different from the power amplifier module 1000a according to the first modification will be described.

[0255] In a power amplifier module including a Doherty amplifier circuit having a multi-stage amplifier, for example, when the saturation degree of the carrier amplifier of the final stage is not high despite the large signal level of the input signal RFin, there is a problem that the following state occurs, that is, the bias point of the peak amplifier of the driver stage is close to Class A, but the bias point of the peak amplifier of the final stage is Class C. In this case, the overall gain of the peak amplifier of the final stage and the peak amplifier of the driver stage becomes low, so these peak amplifiers do not operate, and the distortion characteristics of the power amplifier module are not improved. The power amplifier module 1000f has a structure that can eliminate the above-mentioned problem.

[0256] like Fig.24 As shown, in the power amplifier module 1000f, the detection circuit 1300 controls the signal D cont The output is sent to the final stage peak amplifier 1200. In addition, the power amplifier module 1000f also includes a pre-stage detection circuit 1300i, which outputs a control signal D to the peak amplifier 1200a of the driver stage based on the signal level of the input signal RFin. cont2 . Control signal D cont2 For example, the peak amplifier 1200a of the driver stage or the bias circuit (not shown) of the peak amplifier 1200a is inputted to thereby set the bias point of the peak amplifier 1200a of the driver stage.

[0257] As described above, in the power amplifier module 1000f, the bias point of the final stage peak amplifier 1200 is set according to the saturation degree of the final stage carrier amplifier 1100, and the bias point of the driver stage peak amplifier 1200a is set according to the strength of the signal level of the input signal RFin. Thus, in the power amplifier module 1000f, the driver stage peak amplifier 1200a and the final stage peak amplifier 1200 can be operated at appropriate timing.

[0258] (Summarize)

[0259] <1>

[0260] The detection circuit 1300 of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure includes: a comparison unit 1310, which receives an input signal from a given amplifier (eg, a carrier amplifier 1100, Figure 5 The output terminal of the final stage amplifier 1100 shown in FIG. 1 outputs a signal and a reference voltage V ref , the signal level (eg, voltage) of the signal output from the given amplifier and the reference voltage V are output from the output terminal 1310 c. refa first output signal corresponding to the difference between the first output signal and the second output signal; a DC removal unit 1320 having one terminal electrically connected to the output terminal 1310c of the comparison unit 1310 and outputting a signal from the other terminal in which the DC component of the first output signal is removed; and a detection unit 1330 having an input terminal electrically connected to the other terminal of the DC removal unit 1320 and outputting a control signal D corresponding to the signal level of the signal output from the given amplifier from the output terminal. cont . In this way, in the detection circuit 1300, the DC removal unit 1320 is provided between the comparison unit 1310 and the detection unit 1330 so that the unstable DC component output from the comparison unit 1310 does not act on the detection unit 1330. Thus, the detection circuit 1300 can quickly detect the saturation of the carrier amplifier in the Doherty amplifier circuit. Therefore, the peak amplifier in the Doherty amplifier circuit can be operated at an appropriate timing. In addition, since the saturation of the amplifier of the final stage can be quickly detected, the amplifier of the driving stage can be appropriately controlled.

[0261] <2>

[0262] The DC removal unit 1320 of the detection circuit 130 of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure includes a capacitor, one terminal of which is electrically connected to the output terminal 1310c of the comparison unit 1310, and the other terminal of which outputs a signal from which the DC component of the first output signal is removed. Thus, the DC component can be removed with a small and simple structure.

[0263] <3>

[0264] according to <1> or <2> The detection circuit, wherein the comparison unit 1310 of the detection circuit 130 of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure comprises: a transistor Q10, the emitter or source of which is electrically connected to the output terminal of a given amplifier, and the base or gate of which is electrically connected to the reference voltage V ref The collector or the drain is electrically connected to one terminal of the DC removal unit 1320. This provides a comparison unit with a fast response speed.

[0265] <4>

[0266] according to <1> or <2> The detection circuit, wherein the comparison unit 1310 of the detection circuit 130 of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure includes transistors Q11a and Q12a, the emitter or source of which is electrically connected to the ground, the collector or drain of which is electrically connected to the output terminal of a given amplifier, the base or gate of which is electrically connected to the reference voltage, and is electrically connected to one terminal of the DC removal unit 1320. Thus, compared with the case of using a transistor with a grounded base, it is possible to reduce transistor failure.

[0267] <5>

[0268] according to <1> to <4> The detection circuit of any one of the above, wherein the detection unit 1330 of the detection circuit 130 of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure comprises: a transistor Q30, the base or the gate is electrically connected to the other terminal of the DC removal unit 1320, the collector or the drain is electrically connected to the power supply, and the control signal D is output from the emitter or the source cont Thus, the mutual interaction of the communication between the comparison unit 1310 and the detection unit 1330 can be suppressed.

[0269] <6>

[0270] according to <1> or <2> The detection circuit, wherein in the detection circuit 1300a of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure, the given amplifier is a differential amplifier including a positive-side carrier amplifier (first amplifier) ​​and a negative-side carrier amplifier (second amplifier), and the comparison unit 1310 includes: a comparison unit 1311 (first comparison unit) to which the signal output from the output terminal of the positive-side carrier amplifier (first amplifier) ​​and the reference voltage V are input ref1 The signal level of the signal output from the positive side carrier amplifier (first amplifier) ​​and the reference voltage V is output from the output terminal 1311c (first output terminal). ref1 and a comparison unit 1312 (a second comparison unit) which is input with a signal output from the output terminal of the negative side carrier amplifier (the second amplifier) ​​and a reference voltage V ref1 The output terminal 1312c (second output terminal) outputs a signal level equal to the signal output from the negative side carrier amplifier (second amplifier) ​​and the reference voltage V ref1The DC removing unit 1320 includes: a DC removing unit 1321 (a first DC removing unit) having one terminal electrically connected to an output terminal 1311c (a first output terminal) of the comparing unit 1311 (a first comparing unit) and outputting a signal from the other terminal in which the DC component of the second output signal is removed; and a DC removing unit 1320 (a second DC removing unit) having one terminal electrically connected to an output terminal 1312c (a second output terminal) of the comparing unit 1312 (a second comparing unit) and outputting a signal from the other terminal in which the DC component of the third output signal is removed. , the detection unit 1330 includes: a detection unit 1331 (first detection unit), the input terminal of which is electrically connected to the other terminal of the DC removal unit 1321 (first DC removal unit), and the output terminal of which outputs a first control signal corresponding to the signal level of the signal output from the positive side carrier amplifier (first amplifier); and a detection unit 1332 (second detection unit), the input terminal of which is electrically connected to the other terminal of the DC removal unit 1322 (second DC removal unit), and the output terminal of which outputs a second control signal corresponding to the signal level of the signal output from the negative side carrier amplifier (second amplifier). As a result, the leaked odd-order harmonic components cancel each other, and the influence of the leakage on the circuit can be suppressed.

[0271] <7>

[0272] according to <1> or <2> The detection circuit, wherein in the detection circuit 1300b of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure, the given amplifier is a differential amplifier including a carrier amplifier (first amplifier) ​​on the positive side and a carrier amplifier (second amplifier) ​​on the negative side, and the comparison unit 1310 includes: a comparison unit 1311 (first comparison unit) to which the signal output from the output terminal of the carrier amplifier (first amplifier) ​​on the positive side and the reference voltage V are input ref1 The signal level of the signal output from the positive side carrier amplifier (first amplifier) ​​and the reference voltage V is output from the output terminal 1311c (first output terminal). ref1 and a comparison unit 1312 (a second comparison unit) which is input with a signal output from the output terminal of the negative side carrier amplifier (the second amplifier) ​​and a reference voltage V ref1 The output terminal 1312c (the electrically connected second output terminal) outputs a signal level equal to the signal output from the negative side carrier amplifier (the second amplifier) ​​and the reference voltage V ref1The DC removal unit 1320 is composed of a transformer having a pair of input terminals 1320b1, 1320b2 and a pair of output terminals 1320b3, 1320b4, one input terminal is electrically connected to the output terminal of the comparison unit 1311 (first comparison unit), and the other input terminal is electrically connected to the output terminal of the comparison unit 1312 (second comparison unit). The detection unit 1330 includes: a detection unit 1331 (first detection unit), an input terminal of which is electrically connected to an output terminal 1320b3 of the DC removal unit 1320, and a first control signal corresponding to the signal level of the signal output from the positive side carrier amplifier (first amplifier) ​​is output from the output terminal; and a detection unit 1332 (second detection unit), an input terminal of which is electrically connected to the other output terminal 1320b4 of the DC removal unit 1320, and a second control signal corresponding to the signal level of the signal output from the negative side carrier amplifier (second amplifier) ​​is output from the output terminal. This can remove the DC component and increase the impedance on the load side of the comparison unit 1310 .

[0273] <8>

[0274] according to <6> or <7> The detection circuit, wherein the detection circuit 1300a, 1300b of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes at least one of a current source I2 (a first variable current source) and a current source I3 (a second variable current source), the current source I2 (a first variable current source) is electrically connected to an input terminal of the detection unit 1331 (a first detection unit) and can adjust the current, and the current source I3 (a second variable current source) is electrically connected to an input terminal of the detection unit 1332 (a second detection unit) and can adjust the current. Thus, when the signal output from the comparison unit 1310 (1311, 1312) is very small, the signal can be adjusted.

[0275] <9>

[0276] according to <6> or <7> The detection circuit, wherein the detection circuit 1300a-1300g of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes: a first capacitor, one end of which is electrically connected to the input terminal of the comparison unit 1311 (the first comparison unit), and the other end of which is electrically connected to the output terminal of the comparison unit 1312 (the second comparison unit); and a second capacitor, one end of which is electrically connected to the input terminal of the comparison unit 1312 (the second comparison unit), and the other end of which is electrically connected to the output terminal of the comparison unit 1311 (the first comparison unit). Thus, the signal leaking to the output through the parasitic capacitance can be offset, and thus the malfunction caused by the leakage can be suppressed.

[0277] <10>

[0278] according to <1> to <5> The detection circuit 1300c of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes an amplifier 1340, whose input terminal is electrically connected to the other terminal of the DC removal unit 1320, and whose output terminal is electrically connected to the input terminal of the detection unit 1330. Thus, the detection circuit 1300c can monitor the saturation state of the carrier amplifier 1100 with good sensitivity.

[0279] <11>

[0280] according to <6> , <8> , <9> or <10> The detection circuit described in any one of the above, wherein the detection circuit 1300c of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes: a transistor Q41 (third amplifier) ​​having an input terminal electrically connected to the other terminal of the DC removal unit 1321 (first DC removal unit) and an output terminal electrically connected to the input terminal of the detection unit 1331 (first detection unit); and a transistor Q42 (fourth amplifier) ​​having an input terminal electrically connected to the other terminal of the DC removal unit 1322 (second DC removal unit) and an output terminal electrically connected to the input terminal of the detection unit 1332 (second detection unit). Thus, the detection circuit 1300c can output the control signal D without reducing the effect of mutual cancellation of differential signals in the output of the detection unit 1330. cont .

[0281] <12>

[0282] according to <7> to <10> The detection circuit described in any one of the above, wherein the detection circuit 1300c of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes: a transistor Q41 (third amplifier), whose input terminal is electrically connected to one output terminal 1320c3 of the DC removal unit 1320c, and whose output terminal is electrically connected to the input terminal of the detection unit 1331 (first detection unit); and a transistor Q42 (fourth amplifier), whose input terminal is electrically connected to the other output terminal 1320c4 of the DC removal unit 1320c, and whose output terminal is electrically connected to the input terminal of the detection unit 1332 (second detection unit). Thus, the detection circuit 1300c can output the control signal D without reducing the effect of mutual cancellation of differential signals in the output of the detection unit 1330. cont .

[0283] <13>

[0284] according to <1> to <5> The detection circuit described in any one of the above, wherein the detection circuit 1300d of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes: an amplifier 1340, whose input terminal is electrically connected to the output terminal of the comparison unit 1310, and whose output terminal is electrically connected to the input terminal of the DC removal unit 1320. Thus, the capacitance of the DC removal unit 1320 can be reduced.

[0285] <14>

[0286] according to <6> , <8> , <9> or <10> The detection circuit described in any one of the above, wherein the detection circuit 1300d of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes: a transistor Q51 (third amplifier), the input terminal of which is electrically connected to the output terminal 1311c of the comparison unit 1311 (first comparison unit), and the output terminal of which is electrically connected to one terminal of the DC removal unit 1321 (first DC removal unit); and a transistor Q52 (fourth amplifier), the input terminal of which is electrically connected to the output terminal 1312c of the comparison unit 1312 (second comparison unit), and the output terminal of which is electrically connected to one terminal of the DC removal unit 1322 (second DC removal unit). Thus, in the detection circuit 1300d, it is possible to reduce the failure of the transistor and to reliably drive the detection unit 1330.

[0287] <15>

[0288] according to <7> to <10> The detection circuit described in any one of the above, wherein the detection circuit 1300d of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes: a transistor Q51 (third amplifier), whose input terminal is electrically connected to the output terminal 1311c of the comparison unit 1311 (first comparison unit), and whose output terminal is electrically connected to one input terminal of the DC removal unit 1320; and a transistor Q52 (fourth amplifier), whose input terminal is electrically connected to the output terminal of the comparison unit 1312 (second comparison unit), and whose output terminal is electrically connected to the other input terminal of the DC removal unit 1320. Thus, in the detection circuit 1300d, it is possible to reduce the failure of the transistor and to reliably drive the detection unit 1330.

[0289] <16>

[0290] according to <1> to <5> The detection circuit described in any one of the above, wherein in the detection circuit 1300e of the power amplifier module 1000 involved in the exemplary embodiment of the present disclosure, the given amplifier is a differential amplifier including a carrier amplifier (first amplifier) ​​on the positive side and a carrier amplifier (second amplifier) ​​on the negative side, and the comparison unit 1310 includes: a comparison unit 1311 (first comparison unit) to which the signal output from the output terminal of the carrier amplifier (first amplifier) ​​on the positive side and the reference voltage V are inputref1 , outputting a second output signal corresponding to the difference between the signal level of the signal output from the positive side carrier amplifier (first amplifier) ​​and the reference voltage from the output terminal 1311c; and a comparing unit 1312 (second comparing unit) to which the signal output from the output terminal of the negative side carrier amplifier (second amplifier) ​​and the reference voltage V are input. ref1 The output terminal 1312c outputs the signal level of the signal output from the negative side carrier amplifier (second amplifier) ​​and the reference voltage V ref1 The DC removing unit 1320e forms a differential amplifier circuit including a transistor Q61 (a first transistor) and a transistor Q63 (a second transistor). The base or gate of the transistor Q61 (the first transistor) is electrically connected to an output terminal 1311c of the comparison unit 1311 (the first comparison unit), and a signal with a DC component of the second output signal removed is output from a collector or a drain. The base or gate of the transistor Q63 (the second transistor) is electrically connected to an output terminal 1312c of the comparison unit 1312 (the second comparison unit), and a signal with a DC component of the second output signal removed is output from a collector or a drain. 3, the detection unit 1330 includes: a detection unit 1331 (first detection unit), the input terminal of which is electrically connected to the collector or drain of the transistor Q61 (first transistor), and the output terminal of which outputs a first control signal corresponding to the signal level of the signal output from the positive side carrier amplifier (first amplifier); and a detection unit 1332 (second detection unit), the input terminal of which is electrically connected to the collector or drain of the transistor Q63 (second transistor), and the output terminal of which outputs a second control signal corresponding to the signal level of the signal output from the negative side carrier amplifier (second amplifier). Thus, in the detection circuit 1300e, an appropriate signal for detecting the saturation of the carrier amplifier 1100 can be output to the detection unit 1330.

[0291] <17>

[0292] according to <16> The detection circuit, wherein the detection circuit 1300f of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further includes: a capacitor C71 (first capacitor) connected in series between the base or gate of the transistor Q71 (first transistor) and the output terminal 1311c of the comparison unit 1311 (first comparison unit); and a capacitor C72 (second capacitor) connected in series between the base or gate of the transistor Q72 (second transistor) and the output terminal 1312c of the comparison unit 1312 (second comparison unit). Thus, in the detection circuit 1300f, it is possible to prevent the output of the comparison unit 1310 from flowing into the bias circuit of the differential amplifier circuit 1320f and causing the bias point of the differential amplifier circuit 1320f to change.

[0293] <18>

[0294] according to <17> The detection circuit, wherein the detection circuit 1300f of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure further comprises: a bias circuit (for example, Fig.17 The transistors Q81, Q82 and the reference voltage V ref1 ), a bias is supplied to a node N1 between an output terminal 1311c of a comparison unit 1311 (a first comparison unit) and a capacitor C71 (a first capacitor), and a bias is supplied to a node N2 between an output terminal 1312c of a comparison unit 1312 (a second comparison unit) and a capacitor C72 (a second capacitor). In the detection circuit 1300f, by separating the bias circuit, it is possible to prevent the output of the comparison unit 1310 from flowing into the bias circuit of the differential amplifier circuit 1320f and causing the bias point of the differential amplifier circuit 1320f to change.

[0295] <19>

[0296] according to <1> to <18> The detection circuit of any one of the above, wherein the detection circuit 1300g of the power amplifier module 1000 involved in the exemplary embodiment of the present disclosure further includes: a transistor Q90, a base or a gate and an output terminal ( Fig.18 The emitters of the transistors Q31 and Q32 are electrically connected, the emitters or sources are connected to the ground through the resistor R90 (resistance element), and the collectors or drains are electrically connected to the detection terminal 1302 for outputting the control signal Dcont. Thus, the detection circuit 1300g can detect the control signal D cont Since the signal level is set to an appropriate level, saturation of the carrier amplifier 1100 (the amplifier at the final stage) can be appropriately detected.

[0297] <20>

[0298] according to <1> to <19> The detection circuit 1300g of the power amplification module 1000 according to the exemplary embodiment of the present disclosure is a detection circuit formed on a semiconductor substrate, wherein a central portion Pce1 of a plurality of transistors forming a given amplifier (for example, a positive-side carrier amplifier and a negative-side carrier amplifier) ​​is connected to a reference voltage V ref When the distance between the reference voltage transistor Tv of the transistor of the detection unit 1302 is set to D1, and the distance between the center portion Pce1 and the current source transistor Ti, which is a transistor constituting a current source connected in series between the emitter or source of the detection unit 1330 and the ground, is set to D2, the following formula (1) is satisfied. As a result, the current source transistor Ti and the reference voltage transistor Tv each undergo the same degree of temperature change, so the control signal D output from the detection terminal 1302 iscont Stablize.

[0299] (Mathematical formula 2)

[0300] |D1-D2| / (D1+D2)<1…(1)

[0301] <21>

[0302] In the detection circuit 1300h of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure, the comparison unit 1311 (first comparison unit) includes a transistor Q11a (third transistor) having a collector or a drain electrically connected to an input terminal 1311a of the comparison unit 1311 (first comparison unit) to which a signal output from the positive-side carrier amplifier (first amplifier) ​​is input, an emitter or a source electrically connected to ground, and a base or a gate electrically connected to a transistor Q51 (third amplifier), and the comparison unit 1312 (second comparison unit) includes a transistor Q12a (fourth transistor) having a collector or a drain electrically connected to the comparison unit 1312 (second comparison unit) to which a signal output from the negative-side carrier amplifier (second amplifier) ​​is input. ), the emitter or source is electrically connected to the ground, the base or gate is electrically connected to the transistor Q52 (the fourth amplifier), the transistor Q11a (the third transistor) is arranged inside the region R surrounded by the ground wiring GLN electrically connected to the ground layer GND in a plan view, the input terminal 1311a of the comparison unit 1311 (the first comparison unit) is arranged outside the region R surrounded by the ground wiring GLN, the transistor Q12a (the fourth transistor) is arranged inside the region R surrounded by the ground wiring GLN electrically connected to the ground layer GND in a plan view, and the input terminal 1312a of the comparison unit 1312 (the second comparison unit) is arranged outside the region R surrounded by the ground wiring GLN. Thus, the power amplifier module 1000 can prevent malfunction of the detection circuit 1300h.

[0303] <22>

[0304] In the detection circuit 1300h of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure, the collector or drain of the transistor Q11a (third transistor) is electrically connected to the input terminal 1311a of the comparison unit 1311 (first comparison unit) through the first wiring N1, and the transistor Q11a (third transistor) is provided so that the length in a plan view of the inner side of the region R of the first wiring N1 that includes the transistor Q11a (third transistor) and is surrounded by the ground wiring GLN is L1 is shorter than the length L2 in the plan view outside the region R, the collector or drain of the transistor Q12a (fourth transistor) is electrically connected to the input terminal 1312a of the comparison unit 1312 (second comparison unit) through the second wiring LN2, and the transistor Q12a (fourth transistor) is provided so that the length in the plan view inside the region R including the transistor Q12a (fourth transistor) surrounded by the ground wiring GLN in the second wiring LN2 is shorter than the length in the plan view outside the region R. Thus, the power amplifier module 1000 can more reliably prevent the malfunction of the detection circuit 1300h.

[0305] <23>

[0306] The detection circuit 1300h of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure includes: an amplifier 1360 (fifth amplifier) ​​having an input terminal electrically connected to the output terminal of the comparison unit 1310; a DC removal unit 1370 (intermediate DC removal unit) having one terminal electrically connected to the output terminal of the amplifier 1360 (fifth amplifier) ​​and outputting a signal from which the DC component of the first output signal is removed from the other terminal; an amplifier 1340 (sixth amplifier) ​​having an input terminal electrically connected to the other terminal of the DC removal unit 1370 (intermediate DC removal unit) and an output terminal electrically connected to one terminal of the DC removal unit 1320; and a feedback circuit 1380 electrically connecting the output terminal of the amplifier 1340 (sixth amplifier) ​​and the input terminal of the amplifier 1360 (fifth amplifier) ​​and feeding back a signal obtained by amplifying the signal from which the DC component of the first output signal is removed by the amplifier 1340 (sixth amplifier) ​​to the amplifier 1360 (fifth amplifier). Thus, the detection circuit 1300 h can improve the detection sensitivity through the amplifier 1360 and can suppress the temperature dependency of the current amplification factor of the amplifiers 1340 and 1360 through the feedback circuit 1380 .

[0307] <24>

[0308] The detection circuit 1300h of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure includes: a transistor Q91 (seventh amplifier) ​​having an input terminal (here, the emitter of the transistor Q91) electrically connected to an output terminal of a comparison unit 1311 (first comparison unit); a DC removal unit 1371 (first intermediate DC removal unit) having one terminal electrically connected to the output terminal of the transistor Q91 (seventh amplifier) ​​and outputting a signal from which a DC component has been removed from the other terminal; a transistor Q92 (eighth amplifier) ​​having an input terminal (here, the emitter of the transistor Q92) electrically connected to the output terminal of the comparison unit 1312 (second comparison unit); ) is electrically connected to the output terminal of the positive side carrier amplifier (the first amplifier); and a DC removal unit 1372 (a second intermediate DC removal unit) has one terminal electrically connected to the output terminal of the transistor Q92 (the eighth amplifier) ​​and outputs a signal from which the DC component has been removed from the other terminal. A comparison unit 1311 (a first comparison unit) includes: a transistor Q11a (a fifth transistor) having a collector or a drain electrically connected to an input terminal of the comparison unit 1311 (the first comparison unit) to which a signal output from the positive side carrier amplifier (the first amplifier) ​​is input, and an emitter or a source electrically connected to ground. A comparison unit 1312 (a second comparison unit) includes: a transistor Q12a (a sixth transistor) , the collector or drain is electrically connected to the input terminal 1321a of the comparison unit 1312 (the second comparison unit) to which the signal output from the positive side carrier amplifier (the first amplifier) ​​is input, and the emitter or source is electrically connected to the ground. The transistor Q91 (the seventh amplifier) ​​includes: the transistor Q91 (the seventh transistor), the collector or drain is connected in series with the capacitor C73 (the first capacitor) of the DC removal unit 1371 (the first intermediate DC removal unit), the base or gate is supplied with a reference voltage, and is electrically connected to the ground through a given transistor Q93, and the emitter or source is connected to the base or gate of the transistor Q11a (the fifth transistor). The transistor Q92 (the eighth amplifier) ​​includes a transistor Q92 (the eighth transistor), a collector or a drain of which is connected in series with the capacitor C74 (the second capacitor) of the DC removal section 1372 (the second intermediate DC removal section), a base or a gate of which is supplied with the reference voltage, and is electrically connected to the ground through a given transistor Q94, and an emitter or a source of which is electrically connected to the base or the gate of the transistor Q12a (the sixth transistor), so that the reference voltage is supplied to the base or the gate of the transistor Q12a (the sixth transistor). Thus, in the detection circuit 1300h, by using one transistor (here, each of the transistors Q91 and Q92) for bias supply and signal amplification, the scale of the circuit can be reduced.

[0309] <25>

[0310] In the detection circuit 1300h of the power amplifier module 1000 according to the exemplary embodiment of the present disclosure, the detection unit 1330 includes a detection unit 1331 (first detection unit) and a detection unit 1332 (second detection unit). The detection unit 1331 (first detection unit) includes: a transistor Q31, a base or a gate is electrically connected to the other terminal of the capacitor C21 (first DC removal unit), an emitter or a source is electrically connected to the ground, and a first control signal is output from the collector or the drain. The detection unit 1332 (second detection unit) includes: a transistor Q32, a base or a gate is electrically connected to the other terminal of the capacitor C22 (second DC removal unit), an emitter or a source is electrically connected to the ground, and a second control signal is output from the collector or the drain. The first control signal and the second control signal are combined and the control signal D is output from the output terminal. cont Thus, the power amplifier module 1000 can reduce the scale of the filter circuit (not shown) connected to the detection terminal 1302 .

[0311] The above-described embodiments are used to make the present disclosure easy to understand and are not used to limit the interpretation of the present disclosure. The present disclosure can be changed or improved without departing from its main purpose, and the present disclosure also includes its equivalents. That is, those skilled in the art appropriately apply the mode of design change to the embodiment, as long as they have the characteristics of the present disclosure, they are also included in the scope of the present disclosure. The elements and their configurations etc. possessed by the embodiment are not limited to the exemplified elements and their configurations, and can be appropriately changed.

[0312] Description of Reference Numerals

[0313] 1000: power amplifier module;

[0314] 1100: carrier amplifier;

[0315] 1200: Peak amplifier;

[0316] 1300: detection circuit;

[0317] 1400: Allocator;

[0318] 1500: Synthesis Department.

Claims

1. A detection circuit comprising: a comparison unit that outputs, from an output terminal, a first output signal corresponding to a difference between a signal level of a signal output from a given amplifier and a reference voltage; a DC removing unit having one terminal electrically connected to the output terminal of the comparing unit and outputting a signal from the other terminal of the signal obtained by removing the DC component of the first output signal; and The detection unit has an input terminal electrically connected to the other terminal of the DC removal unit, and outputs a control signal corresponding to the signal level of the signal output from the given amplifier from an output terminal.

2. The detection circuit according to claim 1, wherein: The DC removal unit comprises: The capacitor has one terminal electrically connected to the output terminal of the comparison unit, and outputs a signal from the other terminal in which a DC component of the first output signal is removed.

3. The detection circuit according to claim 1, wherein: The comparison unit comprises: The transistor has an emitter or a source electrically connected to the output terminal of the given amplifier, a base or a gate electrically connected to the reference voltage, and a collector or a drain electrically connected to one terminal of the DC removal unit.

4. The detection circuit according to claim 1, wherein: The comparison unit comprises: The transistor has an emitter or a source electrically connected to the ground, a collector or a drain electrically connected to the output terminal of the given amplifier, a base or a gate electrically connected to the reference voltage, and electrically connected to one terminal of the DC removal unit.

5. The detection circuit according to claim 1, wherein: The detection unit comprises: The transistor has a base or a gate electrically connected to the other terminal of the DC removal unit, a collector or a drain electrically connected to a power supply, and outputs the control signal from an emitter or a source.

6. The detection circuit according to claim 1, wherein: The given amplifier is a differential amplifier including a first amplifier and a second amplifier, The comparison unit comprises: a first comparison unit to which the signal output from the output terminal of the first amplifier and the reference voltage are input, and outputs from the first output terminal a second output signal corresponding to a difference between a signal level of the signal output from the first amplifier and the reference voltage; as well as a second comparison unit to which the signal output from the output terminal of the second amplifier and the reference voltage are input, and outputs a third output signal corresponding to the difference between the signal level of the signal output from the second amplifier and the reference voltage from the second output terminal; The DC removal unit comprises: a first DC removing section having one terminal electrically connected to the first output terminal of the first comparing section and outputting a signal from the other terminal thereof in which a DC component of the second output signal is removed; as well as a second DC removing section having one terminal electrically connected to the second output terminal of the second comparing section and outputting a signal from the other terminal of the signal obtained by removing the DC component of the third output signal; The detection unit comprises: a first detection unit having an input terminal electrically connected to the other terminal of the first DC removing unit and outputting a first control signal corresponding to the signal level of the signal output from the first amplifier from an output terminal; and The second detection unit has an input terminal electrically connected to the other terminal of the second DC removal unit, and outputs a second control signal corresponding to the signal level of the signal output from the second amplifier from an output terminal.

7. The detection circuit according to claim 1, wherein: The given amplifier is a differential amplifier including a first amplifier and a second amplifier, The comparison unit comprises: a first comparison unit to which the signal output from the output terminal of the first amplifier and the reference voltage are input, and outputs from the first output terminal a second output signal corresponding to a difference between a signal level of the signal output from the first amplifier and the reference voltage; as well as a second comparison unit to which the signal output from the output terminal of the second amplifier and the reference voltage are input, and outputs a third output signal corresponding to the difference between the signal level of the signal output from the second amplifier and the reference voltage from the second output terminal; The DC removal unit is composed of a transformer having a pair of input terminals and a pair of output terminals, one input terminal is electrically connected to the output terminal of the first comparison unit, and the other input terminal is electrically connected to the output terminal of the second comparison unit. The detection unit comprises: a first detection unit having an input terminal electrically connected to one output terminal of the DC removal unit and outputting a first control signal corresponding to a signal level of a signal output from the first amplifier from the output terminal; as well as The second detection unit has an input terminal electrically connected to the other output terminal of the DC removal unit, and outputs a second control signal corresponding to the signal level of the signal output from the second amplifier from the output terminal.

8. The detection circuit according to claim 6 or claim 7, wherein: further comprising at least one of a first variable current source and a second variable current source, The first variable current source is electrically connected to the input terminal of the first detection unit and is capable of adjusting the current. The second variable current source is electrically connected to the input terminal of the second detection unit and is capable of adjusting current.

9. The detection circuit according to claim 6 or claim 7, wherein: Also includes: a first capacitor having one end electrically connected to the input terminal of the first comparing unit and the other end electrically connected to the output terminal of the second comparing unit; and The second capacitor has one end electrically connected to the input terminal of the second comparing unit and the other end electrically connected to the output terminal of the first comparing unit.

10. The detection circuit according to claim 1, wherein: Also includes: The amplifier has an input terminal electrically connected to the other terminal of the DC removing unit, and an output terminal electrically connected to the input terminal of the detecting unit.

11. The detection circuit according to claim 6, wherein: Also includes: a third amplifier having an input terminal electrically connected to the other terminal of the first DC removing section and an output terminal electrically connected to the input terminal of the first detecting section; and The fourth amplifier has an input terminal electrically connected to the other terminal of the second DC removing unit, and an output terminal electrically connected to the input terminal of the second detecting unit.

12. The detection circuit according to claim 7, wherein: Also includes: a third amplifier having an input terminal electrically connected to one of the output terminals of the DC removing unit and an output terminal electrically connected to the input terminal of the first detecting unit; and The fourth amplifier has an input terminal electrically connected to the other output terminal of the DC removing unit, and an output terminal electrically connected to the input terminal of the second detecting unit.

13. The detection circuit according to claim 1, wherein: Also includes: The amplifier has an input terminal electrically connected to the output terminal of the comparison unit, and an output terminal electrically connected to the input terminal of the DC removal unit.

14. The detection circuit according to claim 6, wherein: Also includes: a third amplifier having an input terminal electrically connected to the output terminal of the first comparison section and an output terminal electrically connected to one terminal of the first DC removal section; and The fourth amplifier has an input terminal electrically connected to the output terminal of the second comparing section, and an output terminal electrically connected to one terminal of the second DC removing section.

15. The detection circuit according to claim 7, wherein: Also includes: a third amplifier having an input terminal electrically connected to the output terminal of the first comparison unit and an output terminal electrically connected to one input terminal of the DC removal unit; and The fourth amplifier has an input terminal electrically connected to the output terminal of the second comparing unit, and an output terminal electrically connected to the other input terminal of the DC removing unit.

16. The detection circuit according to claim 1, wherein: The given amplifier is a differential amplifier including a first amplifier and a second amplifier, The comparison unit comprises: a first comparison unit to which the signal output from the output terminal of the first amplifier and the reference voltage are input, and outputs from the first output terminal a second output signal corresponding to a difference between a signal level of the signal output from the first amplifier and the reference voltage; as well as a second comparison unit to which the signal output from the output terminal of the second amplifier and the reference voltage are input, and outputs a third output signal corresponding to the difference between the signal level of the signal output from the second amplifier and the reference voltage from the second output terminal; The DC removal unit forms a differential amplifier circuit including a first transistor and a second transistor. In the first transistor, a base or a gate is electrically connected to the output terminal of the first comparison unit, and a signal obtained by removing a DC component of the second output signal is output from a collector or a drain. In the second transistor, a base or a gate is electrically connected to the output terminal of the second comparison unit, and a signal obtained by removing a DC component of the third output signal is output from a collector or a drain. The detection unit comprises: a first detection unit having an input terminal electrically connected to the collector or drain of the first transistor and outputting a first control signal corresponding to the signal level of the signal output from the first amplifier from an output terminal; as well as The second detection unit has an input terminal electrically connected to the collector or the drain of the second transistor, and outputs a second control signal corresponding to the signal level of the signal output from the second amplifier from an output terminal.

17. The detection circuit according to claim 16, wherein: Also includes: a first capacitor connected in series between a base or a gate of the first transistor and an output terminal of the first comparison unit; and The second capacitor is connected in series between the base or gate of the second transistor and the output terminal of the second comparing unit.

18. The detection circuit according to claim 17, wherein: Also includes: The bias circuit supplies a bias to a node between an output terminal of the first comparison unit and the first capacitor, and supplies a bias to a node between an output terminal of the second comparison unit and the second capacitor.

19. The detection circuit according to claim 1, wherein: Also includes: The transistor has a base or a gate electrically connected to the output terminal of the detection unit, an emitter or a source electrically connected to the ground via a resistor, and a collector or a drain electrically connected to a detection terminal for outputting the control signal.

20. The detection circuit according to claim 1, wherein: The detection circuit is a detection circuit formed on a semiconductor substrate, When the distance between the center of the plurality of transistors forming the given amplifier and the reference voltage transistor as the transistor generating the reference voltage is set to D1, and the distance between the center and the current source transistor as the transistor forming the current source connected in series between the emitter or source of the detection unit and the ground is set to D2, Satisfying the condition of formula (1), (Mathematical formula 1) |D1-D2| / (D1+D2)<1…(1).

21. The detection circuit according to claim 14, wherein: The first comparison unit includes: a third transistor having a collector or a drain electrically connected to an input terminal of the first comparison unit to which the signal output from the first amplifier is input, an emitter or a source electrically connected to the ground, and a base or a gate electrically connected to the third amplifier, The second comparison unit includes: a fourth transistor having a collector or a drain electrically connected to an input terminal of the second comparison unit to which a signal output from the second amplifier is input, an emitter or a source electrically connected to ground, and a base or a gate electrically connected to the fourth amplifier, The third transistor is provided inside a region surrounded by a ground wiring electrically connected to the ground layer in a plan view. The input terminal of the first comparison unit is provided outside the region surrounded by the ground wiring. The fourth transistor is provided inside a region surrounded by a ground wiring electrically connected to the ground layer in a plan view. The input terminal of the second comparing unit is provided outside a region surrounded by the ground wiring.

22. The detection circuit according to claim 21, wherein: The collector or drain of the third transistor is electrically connected to the input terminal of the first comparison unit via a first wiring. The third transistor is provided so that a length in a plan view of an inner side of a region of the first wiring surrounded by the ground wiring and including the third transistor is shorter than a length in a plan view of an outer side of the region. The collector or drain of the fourth transistor is electrically connected to the input terminal of the second comparison unit via a second wiring. The fourth transistor is provided so that a length in a plan view inside a region of the second wiring surrounded by the ground wiring and including the fourth transistor is shorter than a length in a plan view outside the region.

23. The detection circuit according to claim 1, wherein: have: a fifth amplifier having an input terminal electrically connected to the output terminal of the comparison unit; an intermediate DC removal section, one terminal of which is electrically connected to the output terminal of the fifth amplifier and outputs a signal from the other terminal of which the DC component of the first output signal is removed; a sixth amplifier having an input terminal electrically connected to the other terminal of the intermediate DC removal section and an output terminal electrically connected to one terminal of the DC removal section; as well as The feedback circuit electrically connects the output terminal of the sixth amplifier and the input terminal of the fifth amplifier, and feeds back to the fifth amplifier a signal obtained by amplifying the signal obtained by removing the DC component of the first output signal by the sixth amplifier.

24. The detection circuit according to claim 14, wherein: Include: a seventh amplifier having an input terminal electrically connected to the output terminal of the first comparison unit; a first intermediate DC removing section, one terminal of which is electrically connected to the output terminal of the seventh amplifier and outputs a signal from which a DC component has been removed from the other terminal; an eighth amplifier having an input terminal electrically connected to the output terminal of the second comparing unit; as well as A second intermediate DC removing section has one terminal electrically connected to the output terminal of the eighth amplifier and outputs a signal from which a DC component has been removed from the other terminal. The first comparison unit includes: a fifth transistor having a collector or a drain electrically connected to an input terminal of the first comparison unit to which the signal output from the first amplifier is input, and an emitter or a source electrically connected to ground, The second comparison unit includes: a sixth transistor having a collector or a drain electrically connected to an input terminal of the second comparison unit to which the signal output from the second amplifier is input, and an emitter or a source electrically connected to ground, The seventh amplifier comprises: a seventh transistor having a collector or a drain connected in series with the first capacitor of the first intermediate DC removing section, a base or a gate supplied with a reference voltage and electrically connected to the ground via a given transistor, and an emitter or a source electrically connected to the base or the gate of the fifth transistor so that the reference voltage is supplied to the base or the gate of the fifth transistor, The eighth amplifier comprises: The 8th transistor has a collector or a drain connected in series with the second capacitor of the second intermediate DC removal unit, a base or a gate supplied with a reference voltage, and is electrically connected to the ground through a given transistor, and an emitter or a source electrically connected to the base or the gate of the 6th transistor, so that the reference voltage is supplied to the base or the gate of the 6th transistor.

25. The detection circuit according to claim 6, wherein: The detection unit includes the first detection unit and the second detection unit, The first detection unit includes: a transistor, wherein a base or a gate is electrically connected to the other terminal of the first DC removing portion, an emitter or a source is electrically connected to the ground, and the collector or the drain outputs the first control signal, The second detection unit includes: a transistor having a base or a gate electrically connected to the other terminal of the second DC removing portion, an emitter or a source electrically connected to the ground, and outputting the second control signal from a collector or a drain, The first control signal and the second control signal are synthesized and output from an output terminal.

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