Electronic device

Abstract

An electronic device (1) is provided with: a wiring substrate (10) having a first main surface (11) and a second main surface (12) facing each other in the thickness direction; a first electronic component (20) mounted on the first main surface (11) of the wiring substrate (10); a second electronic component (30) mounted on a second main surface (12) of the wiring substrate (10); a first heat diffusion plate (40) thermally connected to the first electronic component (20); a second heat diffusion plate (50) thermally connected to the second electronic component (30); and a heat conductor (60) that is provided so as to pass through the wiring substrate (10) in the thickness direction, and that is thermally connected to the first heat diffusion plate (40) and the second heat diffusion plate (50).

Description

Technical Field

[0001] The present invention relates to electronic equipment. Background Art

[0002] Patent document 1 discloses a semiconductor device, which includes a printed wiring board, a first semiconductor module, a first heat sink, a second semiconductor module, and a second heat sink. The first semiconductor module and the second semiconductor module are arranged to overlap each other in a plan view, and the second semiconductor module is connected in parallel with the first semiconductor module. The first semiconductor module includes: a first package body, which contains a first semiconductor element; and a first heat sink, which is provided on one side of the first package body and releases heat generated by the first semiconductor element, and the other side of the first package body facing the first heat sink is arranged to face one side of the printed wiring board. The first heat sink is provided on the first heat sink of the first semiconductor module. The second semiconductor module includes: a second package body, which contains a second semiconductor element; and a second heat sink, which is provided on one side of the second package body and releases heat generated by the second semiconductor element, and the other side of the second package body facing the second heat sink is arranged to face the other side of the printed wiring board. The second heat dissipation device is provided on the second heat dissipation surface of the second semiconductor module.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2019 / 0157177 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] Patent Document 1 describes a heat sink as an example of the first heat sink and the second heat sink. According to Patent Document 1, a low-cost semiconductor device with a reduced footprint and improved heat dissipation can be provided.

[0008] However, in the case where a heat sink is separately provided for the semiconductor modules provided on the front and back sides of the printed wiring substrate, as in the semiconductor device described in Patent Document 1, there is room for improvement from the viewpoint of heat conduction. In addition, since the heat sink is provided on both sides of the printed wiring substrate, the semiconductor device as a whole becomes larger and the height increases. Moreover, in recent years, there is a demand for miniaturization and lightness of devices including semiconductor devices. For example, when there is not enough space on one side of the printed wiring substrate, it is difficult to configure the heat sink on both sides of the printed wiring substrate.

[0009] The above-mentioned problem is not limited to semiconductor devices, but is a common problem in electronic devices in which electronic components are mounted on both the front and back sides of a wiring board.

[0010] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide an electronic device which is excellent in heat conduction and can be miniaturized and lowered in height.

[0011] Solutions for solving problems

[0012] The electronic device of the present invention includes: a wiring substrate having a first main surface and a second main surface opposite to each other in the thickness direction; a first electronic component mounted on the first main surface of the wiring substrate; a second electronic component mounted on the second main surface of the wiring substrate; a first heat diffusion plate thermally connected to the first electronic component; a second heat diffusion plate thermally connected to the second electronic component; and a heat conductor arranged in a manner penetrating the wiring substrate in the thickness direction and thermally connected to the first heat diffusion plate and the second heat diffusion plate.

[0013] Effects of the Invention

[0014] According to the present invention, it is possible to provide an electronic device which is excellent in heat conduction and can be reduced in size and height. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a cross-sectional view schematically showing an example of the electronic device according to the first embodiment of the present invention.

[0016] Figure 2 yes Figure 1 A top view of the electronic device shown along line A.

[0017] Figure 3 It is a perspective view schematically showing an example of the first heat diffusion plate, the second heat diffusion plate, and the heat conductor.

[0018] Figure 4 It is a cross-sectional view schematically showing an example of a connection portion between the second heat diffusion plate and the heat conductor.

[0019] Figure 5 It is a cross-sectional view schematically showing an example of a connection portion between the first heat diffusion plate and the heat conductor.

[0020] Figure 6 It is a cross-sectional view schematically showing an example of an electronic device according to a second embodiment of the present invention.

[0021] Figure 7 yes Figure 6 A top view of the electronic device along line B is shown.

[0022] Figure 8 It is a cross-sectional view schematically showing an example of a capacitor element arranged inside a wiring substrate.

[0023] Fig. 9 yes Figure 8 A top view of the capacitor element along line C is shown. DETAILED DESCRIPTION

[0024] The electronic device of the present invention is described below. In addition, the present invention is not limited to the following structure, and can also be appropriately changed within the scope of not changing the gist of the present invention. In addition, a structure formed by combining a plurality of the preferred structures described below is also the present invention.

[0025] The embodiments shown below are examples, and it is self-evident that parts of the structures shown in different embodiments can be replaced or combined. After the second embodiment, the description of matters common to the first embodiment is omitted, and only the differences are described. In particular, the same effects produced by the same structure are not mentioned in sequence in each embodiment.

[0026] In the following description, when there is no particular distinction between the embodiments, they are simply referred to as “electronic equipment of the present invention”.

[0027] In this specification, terms indicating the relationship between elements (such as "vertical", "parallel", "orthogonal", etc.) and terms indicating the shape of an element do not express only strict meanings, but rather express essentially equivalent ranges, for example, also including differences of several percentage points.

[0028] The drawings shown below are schematic diagrams, and their dimensions, aspect ratios, etc. may differ from those of actual products. In the drawings, the same reference numerals are used for the same or equivalent parts. In addition, in each drawing, the same reference numerals are marked for the same elements and repeated descriptions are omitted.

[0029] [First embodiment]

[0030] Figure 1 It is a cross-sectional view schematically showing an example of the electronic device according to the first embodiment of the present invention. Figure 2 yes Figure 1 A top view of the electronic device shown along line A.

[0031] Figure 1 The electronic device 1 shown includes a wiring substrate 10, a first electronic component 20, a second electronic component 30, a first heat diffusion plate 40, a second heat diffusion plate 50, and a heat conductor 60. Figure 1 As shown, the electronic device 1 further includes a heat sink 70 .

[0032] The wiring substrate 10 has a thickness direction (in Figure 1 In the figure, there are a first main surface 11 and a second main surface 12 which are opposite to each other in the up-down direction.

[0033] The wiring substrate 10 may be a multi-layer substrate or a single-layer substrate. In addition, the wiring substrate 10 may be a ceramic substrate or a resin substrate. The ceramic material constituting the ceramic substrate may be a low-temperature sintered ceramic material or a high-temperature sintered ceramic material. The resin material constituting the resin substrate may be a thermosetting resin or a thermoplastic resin, for example, glass epoxy resin, liquid crystal polymer, etc.

[0034] exist Figure 1 In the example shown, the wiring substrate 10 is a multilayer substrate including a plurality of insulating layers. The wiring substrate 10 has wiring conductors such as an internal conductor provided between the insulating layers, an external conductor provided on the first main surface 11, an external conductor provided on the second main surface 12, and a via conductor penetrating the insulating layer in the thickness direction, and a specific wiring conductor is electrically connected to the first electronic component 20 or the second electronic component 30.

[0035] First electronic component 20 is mounted on first main surface 11 of wiring board 10. For example, first electronic component 20 may be connected to an external conductor provided on first main surface 11 of wiring board 10 or to a via conductor exposed on first main surface 11 of wiring board 10.

[0036] Second electronic component 30 is mounted on second main surface 12 of wiring board 10. For example, second electronic component 30 may be connected to an external conductor provided on second main surface 12 of wiring board 10 or to a via conductor exposed on second main surface 12 of wiring board 10.

[0037] The first electronic component 20 and the second electronic component 30 each have a load that generates heat due to the flow of current.

[0038] For example, the first electronic component 20 includes a semiconductor element for executing a logical operation, and the second electronic component 30 includes a voltage regulating circuit for supplying power to the semiconductor element of the first electronic component 20 .

[0039] The first heat diffusion plate 40 is thermally connected to the first electronic component 20 . For example, the first heat diffusion plate 40 is arranged in a direction along the first main surface 11 of the wiring substrate 10 .

[0040] The first heat diffusion plate 40 is directly or indirectly connected to the first electronic component 20. For example, the first heat diffusion plate 40 can be connected to the first electronic component 20 via a grease-like or sheet-like TIM (Thermal Interface Material).

[0041] Preferably, if Figure 1 As shown in FIG. 1 , the surface of the first electronic component 20 that is thermally connected to the first heat diffusion plate 40 is the surface on the opposite side of the surface of the first electronic component 20 that is electrically connected to the wiring substrate 10 in the thickness direction. Figure 1 In the illustrated example, the surface of the first electronic component 20 that is thermally connected to the first heat diffusion plate 40 is the upper surface, and the surface of the first electronic component 20 that is electrically connected to the wiring substrate 10 is the lower surface.

[0042] The second heat diffusion plate 50 is thermally connected to the second electronic component 30 . For example, the second heat diffusion plate 50 is arranged in a direction along the second main surface 12 of the wiring substrate 10 .

[0043] The second heat diffusion plate 50 is directly or indirectly connected to the second electronic component 30. For example, the second heat diffusion plate 50 may be connected to the second electronic component 30 via a grease-like or sheet-like TIM.

[0044] Preferably, if Figure 1 As shown in FIG. 1 , the surface of the second electronic component 30 that is thermally connected to the second heat diffusion plate 50 is the surface on the opposite side of the surface of the second electronic component 30 that is electrically connected to the wiring substrate 10 in the thickness direction. Figure 1 In the example shown, the surface of the second electronic component 30 that is thermally connected to the second heat diffusion plate 50 is the lower surface, and the surface of the second electronic component 30 that is electrically connected to the wiring board 10 is the upper surface.

[0045] The heat conductor 60 is provided to penetrate the wiring substrate 10 in the thickness direction and is thermally connected to the first heat diffusion plate 40 and the second heat diffusion plate 50. The heat conductor 60 is arranged to be inclined with respect to the first main surface 11 and the second main surface 12 of the wiring substrate 10, and is preferably arranged perpendicular to the first main surface 11 and the second main surface 12 of the wiring substrate 10.

[0046] The heat conductor 60 may be provided with only one, but preferably with two or more. The heat conductor 60 may be provided with three or more, or may be provided with four or more. If two or more heat conductors 60 are provided, the first heat diffusion plate 40 and the second heat diffusion plate 50 can be arranged flatly. In addition, if two or more heat conductors 60 are provided, the heat circulation is excellent. Figure 2 In the example shown, four heat conductors 60 are provided.

[0047] In the electronic device 1, the heat dissipation structures on both sides of the wiring substrate 10 can be thermally coupled by using the heat conductor 60. Therefore, for example, by concentrating the heat on the second main surface 12 side of the wiring substrate 10 on the first main surface 11 side and dissipating the heat on the first main surface 11 side, the heat dissipation structure on the second main surface 12 side can be miniaturized and lowered.

[0048] For example, at least one of the first heat diffusion plate 40, the second heat diffusion plate 50 and the heat conductor 60 may have a gas-liquid exchange mechanism in the internal space, or all of the first heat diffusion plate 40, the second heat diffusion plate 50 and the heat conductor 60 may have a gas-liquid exchange mechanism in the internal space.

[0049] When the first heat diffusion plate 40 has a gas-liquid exchange mechanism in the internal space, it is preferable that the first heat diffusion plate 40 is a heat spreader. Figure 1 Although not shown, the first heat diffusion plate 40 preferably includes a capillary structure (wick) disposed in the internal space and a working fluid sealed in the internal space.

[0050] When the second heat diffusion plate 50 has a gas-liquid exchange mechanism in the internal space, it is preferable that the second heat diffusion plate 50 is a heat spreader. Figure 1 Although not shown, the second heat diffusion plate 50 preferably includes a capillary structure (wick) disposed in the internal space and a working fluid sealed in the internal space.

[0051] When the heat conductor 60 has a gas-liquid exchange mechanism in the internal space, it is preferable that the heat conductor 60 is a heat pipe. Figure 1 Although not shown in the figure, the heat conductor 60 preferably includes a capillary structure (wick) arranged in the internal space and a working fluid sealed in the internal space.

[0052] When the first heat diffusion plate 40, the second heat diffusion plate 50, and the heat conductor 60 all have gas-liquid exchange mechanisms in their internal spaces, the internal space of the heat conductor 60 may be connected to the internal space of the first heat diffusion plate 40 or the second heat diffusion plate 50. Figure 1 In the illustrated example, the internal space of the heat conductor 60 communicates with the internal space of the second heat diffusion plate 50 .

[0053] exist Figure 1 Although not shown, it is preferred that the first heat diffusion plate 40 , the second heat diffusion plate 50 , and the heat conductor 60 are electrically grounded to a housing (not shown) of the electronic device 1 or the wiring substrate 10 .

[0054] It can also be, Figure 1 As shown, the electronic device 1 further includes a heat sink 70 thermally connected to the first heat diffusion plate 40. In this case, the heat on the second main surface 12 side of the wiring substrate 10 can be concentrated on the first main surface 11 side and dissipated on the first main surface 11 side, so it is no longer necessary to configure the heat sink 70 on the second main surface 12 side.

[0055] Preferably, if Figure 1As shown, the surface of the first heat diffusion plate 40 that is thermally connected to the heat sink 70 is the surface on the opposite side of the surface of the first heat diffusion plate 40 that is thermally connected to the first electronic component 20 in the thickness direction. Figure 1 In the illustrated example, the surface of the first heat diffusion plate 40 that is thermally connected to the heat sink 70 is the upper surface, and the surface of the first heat diffusion plate 40 that is thermally connected to the first electronic component 20 is the lower surface.

[0056] When the heat sink 70 is thermally connected to the first heat diffusion plate 40, the heat dissipation path on the first electronic component 20 side is shorter than the heat dissipation path on the second electronic component 30 side. Therefore, it is preferable that the power consumed by the current flowing through the load of the first electronic component 20 is greater than the power consumed by the current flowing through the load of the second electronic component 30.

[0057] In particular, when the first heat diffusion plate 40, the second heat diffusion plate 50 and the heat conductor 60 all have a gas-liquid exchange mechanism in the internal space, from the viewpoint of making the heat dissipation path on the first electronic component 20 side shorter than the heat dissipation path on the second electronic component 30 side, it is preferred that the internal space of the heat conductor 60 is connected to the internal space of the second heat diffusion plate 50.

[0058] Figure 3 It is a perspective view schematically showing an example of the first heat diffusion plate, the second heat diffusion plate, and the heat conductor. Figure 4 It is a cross-sectional view schematically showing an example of a connection portion between the second heat diffusion plate and the heat conductor. Figure 5 It is a cross-sectional view schematically showing an example of a connection portion between the first heat diffusion plate and the heat conductor.

[0059] exist Figure 3 , Figure 4 as well as Figure 5 In the example shown, the first heat diffusion plate 40, the second heat diffusion plate 50, and the heat conductor 60 all have a gas-liquid exchange mechanism in the internal space. Specifically, the first heat diffusion plate 40 and the second heat diffusion plate 50 are heat spreaders, and the heat conductor 60 is a heat pipe. Figure 4 and Figure 5 The capillary structure (wick) and the working fluid are not shown.

[0060] The materials constituting the first heat diffusion plate 40, the second heat diffusion plate 50 and the heat conductor 60 are not particularly limited, but are preferably metals, such as copper, nickel, aluminum, magnesium, titanium, iron or alloys containing them as main components, and copper is particularly preferred. The materials constituting the first heat diffusion plate 40, the second heat diffusion plate 50 and the heat conductor 60 may be the same, or may be partially or completely different, but are preferably the same.

[0061] exist Figure 3 , Figure 4as well as Figure 5 In the example shown, the inner space of the heat conductor 60 communicates with the inner space of the second heat diffusion plate 50. For example, one end of the heat conductor 60 having a hollow structure is inserted into an opening provided in the second heat diffusion plate 50. Alternatively, the second heat diffusion plate 50 and the heat conductor 60 may be connected at the connection portion thereof by solder or the like.

[0062] It can also be, Figure 3 and Figure 4 As shown, a support ring 51 covering the outer peripheral surface of the heat conductor 60 is provided at the connection portion between the second heat diffusion plate 50 and the heat conductor 60. In this case, the material constituting the support ring 51 may be metal or heat-resistant nonmetal, for example.

[0063] It can also be, Figure 3 and Figure 4 As shown, the second heat diffusion plate 50 has an edge portion 52 at the periphery of the opening. In this case, the inner surface of the edge portion 52 contacts the outer peripheral surface of the heat conductor 60. In addition, when the support ring 51 is provided, the outer surface of the edge portion 52 contacts the inner surface of the support ring 51.

[0064] exist Figure 3 , Figure 4 as well as Figure 5 In the illustrated example, the internal space of the heat conductor 60 is not communicated with the internal space of the first heat diffusion plate 40. For example, it is preferable that one end of the heat conductor 41 having a hollow structure is inserted into the opening provided in the first heat diffusion plate 40.

[0065] The heat conductor 41 is, for example, a heat pipe. The material constituting the heat conductor 41 and the material constituting the heat conductor 60 may be the same or different.

[0066] The length of the heat conductor 41 is shorter than the length of the heat conductor 60 . On the other hand, the diameter of the heat conductor 41 is larger than the diameter of the heat conductor 60 .

[0067] Preferably, the heat conductor 60 is inserted into a hollow portion of the heat conductor 41 integrated with the first heat diffusion plate 40. By providing the heat conductor 41 in the first heat diffusion plate 40, thermal contact between the first heat diffusion plate 40 and the heat conductor 60 can be improved.

[0068] Preferably, if Figure 5 As shown in FIG. 1 , a TIM 61 such as thermal grease is provided between the heat conductor 60 and the heat conductor 41 . Thus, the thermal contact between the first heat diffusion plate 40 and the heat conductor 60 can be further improved.

[0069] It can also be, Figure 3 and Figure 5As shown in FIG. 1 , the heat conductor 60 has a thread 62 on the outer peripheral surface. In this case, by tightening and pressing a fixing member 63 such as a nut against the thread 62 , the heat conductor 60 can be firmly fixed to the first heat diffusion plate 40 .

[0070] According to the above content, if Figure 1 As shown, the wiring substrate 10 is fixed between the first heat diffusion plate 40 and the second heat diffusion plate 50. For example, by tightening with a fixing member 63 such as a nut, the wiring substrate 10 can be fixed together with the first electronic component 20 and the second electronic component 30 using the first heat diffusion plate 40 and the second heat diffusion plate 50. Alternatively, the first heat diffusion plate 40 or the second heat diffusion plate 50 can be fixed to the wiring substrate 10 using a metal screw or the like other than the heat conductor 60. In addition, Figure 1 In the embodiment, the heat conductor 41 (see Figure 3 and Figure 5 ) partially enters between the wiring substrate 10 and the heat conductor 60.

[0071] [Second embodiment]

[0072] The electronic device according to the second embodiment of the present invention further includes a capacitor element disposed inside the wiring substrate. In the electronic device according to the second embodiment of the present invention, the heat conductor is provided so as to penetrate the capacitor element in the thickness direction and is in contact with the capacitor element.

[0073] Figure 6 It is a cross-sectional view schematically showing an example of an electronic device according to a second embodiment of the present invention. Figure 7 yes Figure 6 A top view of the electronic device along line B is shown.

[0074] Figure 6 The electronic device 2 shown is Figure 1 The electronic device 1 shown in the figure similarly includes a wiring substrate 10, a first electronic component 20, a second electronic component 30, a first heat diffusion plate 40, a second heat diffusion plate 50, and a heat conductor 60. Figure 6 As shown, the electronic device 2 further includes a heat sink 70 .

[0075] Electronic device 2 further includes capacitor element 80 disposed inside wiring substrate 10. As described later, capacitor element 80 includes a first electrode layer, a second electrode layer, and a dielectric layer, and the first electrode layer and the second electrode layer face each other in the thickness direction with the dielectric layer interposed therebetween.

[0076] The arrangement of the capacitor element 80 inside the wiring substrate 10 is not particularly limited. For example, the capacitor element 80 is arranged in the direction along the first main surface 11 and the second main surface 12 of the wiring substrate 10. One capacitor element 80 may be arranged inside the wiring substrate 10, or two or more capacitor elements 80 may be arranged. For example, two or more capacitor elements 80 may be arranged in the thickness direction, or two or more capacitor elements 80 may be arranged in the surface direction.

[0077] Heat conductor 60 is provided so as to penetrate capacitor element 80 in the thickness direction and is in contact with capacitor element 80 .

[0078] When two or more heat conductors 60 are provided, at least one heat conductor 60 only needs to penetrate the capacitor element 80 in the thickness direction. Figure 7 In the illustrated example, four heat conductors 60 penetrate the capacitor element 80 in the thickness direction.

[0079] When two or more capacitor elements 80 are arranged inside wiring board 10, the number of heat conductors 60 penetrating capacitor elements 80 may be the same or may be partially or completely different. In addition, capacitor elements 80 without heat conductors 60 penetrating therethrough may be included.

[0080] In electronic device 2, heat conductor 60 penetrates capacitor element 80 disposed inside wiring board 10, thereby preventing interference with heat dissipation structures on both sides of wiring board 10. Heat conductor 60 can also dissipate heat generated from capacitor element 80.

[0081] Furthermore, by arranging capacitor element 80 inside wiring board 10, the capacitor elements arranged on second main surface 12 of wiring board 10 can be reduced. Therefore, on the second main surface 12 side of wiring board 10, the heat dissipation structure can be further miniaturized and lowered.

[0082] It can also be, Figure 6 As shown, the electronic device 2 further includes a capacitor element 85 disposed inside the first electronic component 20 or the second electronic component 30. The capacitor element 85 may be disposed inside either the first electronic component 20 or the second electronic component 30, or may be disposed inside both.

[0083] Like capacitor element 80 , capacitor element 85 includes a first electrode layer, a second electrode layer, and a dielectric layer, and the first electrode layer and the second electrode layer face each other in the thickness direction with the dielectric layer interposed therebetween. The structure of capacitor element 85 may be the same as or different from that of capacitor element 80 .

[0084] Figure 8It is a cross-sectional view schematically showing an example of a capacitor element arranged inside a wiring substrate. Fig. 9 yes Figure 8 A top view of the capacitor element along line C is shown.

[0085] Figure 8 The illustrated capacitor element 80 includes a capacitor portion 110 and a sealing layer 120 that seals the capacitor portion 110 .

[0086] The capacitor portion 110 includes a first electrode layer and a second electrode layer that are opposed to each other in the thickness direction with a dielectric layer interposed therebetween.

[0087] exist Figure 8 In the example shown, the first electrode layer is the anode plate 111, and the second electrode layer is the cathode layer 112. Thus, the capacitor unit 110 constitutes an electrolytic capacitor.

[0088] Anode plate 111 includes core 111A made of metal, for example, and porous portion 111B provided on at least one main surface of core 111A. Dielectric layer 113 is provided on the surface of porous portion 111B, and cathode layer 112 is provided on the surface of dielectric layer 113.

[0089] The cathode layer 112 includes, for example, a solid electrolyte layer 112A provided on the surface of the dielectric layer 113. Preferably, the cathode layer 112 further includes a conductor layer 112B provided on the surface of the solid electrolyte layer 112A. The conductor layer 112B includes, for example, a carbon layer 112Ba provided on the surface of the solid electrolyte layer 112A and a copper layer 112Bb provided on the surface of the carbon layer 112Ba.

[0090] In addition, the capacitor unit 110 is not limited to an electrolytic capacitor such as a solid electrolytic capacitor, and may be, for example, a ceramic capacitor using barium titanate or the like, or a thin film capacitor using silicon nitride (SiN), silicon dioxide (SiO2), hydrogen fluoride (HF), etc. However, from the viewpoint of mechanical properties such as the rigidity and flexibility of the capacitor element 80 and the ability to form a thinner and relatively large capacitor unit 110, it is preferred that the capacitor unit 110 is a capacitor using a metal such as aluminum as a base material, and it is more preferred that the capacitor unit 110 is an electrolytic capacitor using a metal such as aluminum as a base material.

[0091] Preferably, if Figure 8 and Fig. 9 As shown, the capacitor element 80 includes a first electrode layer (in Figure 8 In the example shown, the first through-hole conductor 131 is electrically connected to the anode plate 111.

[0092] In addition, it is preferable that the capacitor element 80 includes a second electrode layer (in Figure 8In the example shown, the cathode layer 112 is electrically connected to the second through-hole conductor 132.

[0093] exist Figure 8 and Fig. 9 In the example shown, the first through-hole conductor 131 is electrically connected to the end surface of the first electrode layer (eg, the anode plate 111 ) at its side wall. The space between the second through-hole conductor 132 and the capacitor portion 110 is filled with the insulating material 122 .

[0094] The resin filling portion 124 may be provided inside the first through-hole conductor 131. Similarly, the resin filling portion 124 may be provided inside the second through-hole conductor 132. The resin filling portion 124 may be a conductor or an insulator.

[0095] Preferably, if Figure 8 and Fig. 9 As shown in FIG. 1 , an insulating layer 126 is provided around the first through-hole conductor 131. Similarly, it is preferable that an insulating layer 126 is provided around the second through-hole conductor 132. Figure 8 and Fig. 9 In the illustrated example, the insulating layer 126 is provided between the first through-hole conductor 131 and the cathode layer 112 or between the second through-hole conductor 132 and the cathode layer 112 .

[0096] The first through-hole conductor 131 is formed, for example, as follows. First, a first through-hole is formed that penetrates the capacitor portion 110 and the sealing layer 120 in the thickness direction by drilling, laser processing, etc. Then, the first through-hole conductor 131 is formed by metallizing the inner wall surface of the first through-hole with a metal material containing a low-resistance metal such as copper, gold, or silver. When forming the first through-hole conductor 131, for example, the inner wall surface of the first through-hole is metallized by electroless copper plating, electrolytic copper plating, etc., so that processing becomes easy. In addition, as a method for forming the first through-hole conductor 131, in addition to a method of metallizing the inner wall surface of the first through-hole, a method of filling the first through-hole with a metal material, a composite material of metal and resin, or the like may also be used.

[0097] The second through-hole conductor 132 is formed, for example, as follows. First, a first through-hole penetrating the capacitor portion 110 in the thickness direction is formed by drilling, laser processing, etc. Next, the insulating material 122 is filled into the first through-hole. The second through-hole is formed by drilling, laser processing, etc. on the portion filled with the insulating material 122. At this time, by making the diameter of the second through-hole smaller than the diameter of the first through-hole filled with the insulating material 122, the insulating material 122 is set to exist between the inner wall surface of the first through-hole formed previously and the inner wall surface of the second through-hole in the plane direction. Thereafter, the second through-hole conductor 132 is formed by metallizing the inner wall surface of the second through-hole with a metal material containing a low-resistance metal such as copper, gold, or silver. When forming the second through-hole conductor 132, for example, the inner wall surface of the second through-hole is metallized by electroless copper plating, electrolytic copper plating, etc., so that processing becomes easy. In addition, the method of forming second through-hole conductor 132 may be a method of filling the second through-hole with a metal material, a composite material of metal and resin, or the like, other than the method of metalizing the inner wall surface of the second through-hole.

[0098] exist Figure 8 Although not shown, capacitor element 80 may further include a through-hole conductor other than first through-hole conductor 131 and second through-hole conductor 132. For example, capacitor element 80 may further include a through-hole conductor that is not electrically connected to the first electrode layer and the second electrode layer of capacitor portion 110.

[0099] Preferably, the capacitor element 80 further includes external wiring layers 151 and 152 provided on the surface of the sealing layer 120. Preferably, the external wiring layers 151 and 152 are provided along the main surface direction orthogonal to the thickness direction of the capacitor part 110. Figure 8 In the illustrated example, the external wiring layers 151 and 152 are provided on both principal surface sides of the capacitor unit 110 , but may be provided on only one principal surface side.

[0100] Preferably, capacitor element 80 further includes via conductor 160 provided inside sealing layer 120. Preferably, via conductor 160 is provided along the thickness direction of capacitor unit 110. One end of via conductor 160 is connected to the second electrode layer (e.g. cathode layer 112) of capacitor unit 110, and the other end is connected to external wiring layer 152.

[0101] exist Figure 8 In the example shown, the first electrode layer (e.g., anode plate 111) of capacitor unit 110 is electrically connected to external wiring layer 151 via first through-hole conductor 131. Thus, preferably, the first electrode layer is electrically led out to the surface of sealing layer 120 via first through-hole conductor 131. External wiring layer 151 can function as a connection terminal of capacitor unit 110.

[0102] exist Figure 8 In the example shown, the second through-hole conductor 132 is electrically connected to the second electrode layer (e.g., cathode layer 112) of the capacitor unit 110 via the external wiring layer 152 and the via conductor 160. Thus, it is preferable that the second through-hole conductor 132 is provided so as to penetrate both the capacitor unit 110 and the sealing layer 120 in the thickness direction of the capacitor unit 110. The external wiring layer 152 can function as a connection terminal of the capacitor unit 110.

[0103] When the capacitor unit 110 includes the anode plate 111 and the cathode layer 112, the anode plate 111 is preferably formed of a so-called valve metal that exhibits a valve action. Examples of the valve metal include metal monomers such as aluminum, tantalum, niobium, titanium, and zirconium, or alloys containing at least one of these metals. Among them, aluminum or an aluminum alloy is preferred.

[0104] The shape of the anode plate 111 is preferably a flat plate, more preferably a foil. The anode plate 111 only needs to have the porous portion 111B on at least one main surface of the core 111A, or may have the porous portion 111B on both main surfaces of the core 111A. The porous portion 111B is preferably a porous layer formed on the surface of the core 111A, more preferably an etching layer.

[0105] The thickness of the anode plate 111 before etching is preferably 60 μm or more and 200 μm or less. The thickness of the core 111A that is not etched after etching is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 111B is designed to match the required withstand voltage and electrostatic capacitance, but preferably, the total thickness of the porous portions 111B on both sides of the core 111A is 10 μm or more and 180 μm or less.

[0106] The pore size of the porous portion 111B is preferably 10 nm or more and 600 nm or less. The pore size of the porous portion 111B refers to a median diameter D50 measured by a mercury porosimeter. The pore size of the porous portion 111B can be controlled by adjusting various conditions during etching, for example.

[0107] The dielectric layer 113 provided on the surface of the porous portion 111B is porous reflecting the surface state of the porous portion 111B and has a fine concavoconvex surface shape. Preferably, the dielectric layer 113 is composed of an oxide film of the above-mentioned valve-action metal. For example, when an aluminum foil is used as the anode plate 111, the dielectric layer 113 composed of an oxide film can be formed by performing an anodic oxidation treatment (also called chemical conversion treatment) on the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like.

[0108] The thickness of the dielectric layer 113 is designed to match the required withstand voltage and electrostatic capacitance, but is preferably not less than 10 nm and not more than 100 nm.

[0109] In the case where the cathode layer 112 includes a solid electrolyte layer 112A, as a material constituting the solid electrolyte layer 112A, for example, conductive polymers such as polypyrroles, polythiophenes, and polyanilines can be cited. Among them, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene) called PEDOT is particularly preferred. In addition, the above-mentioned conductive polymer may also include a dopant such as polystyrene sulfonic acid (PSS). In addition, it is preferred that the solid electrolyte layer 112A includes an inner layer that fills the pores (recesses) of the dielectric layer 113 and an outer layer that covers the dielectric layer 113.

[0110] The thickness of solid electrolyte layer 112A from the surface of porous portion 111B is preferably 2 μm or more and 20 μm or less.

[0111] The solid electrolyte layer 112A is formed, for example, by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 113 using a treatment solution containing a monomer such as 3,4-ethylenedioxythiophene, or by a method of applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 113 and drying it.

[0112] The solid electrolyte layer 112A can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 113 by a method such as sponge transfer, screen printing, dispenser coating, or inkjet printing.

[0113] When cathode layer 112 includes conductor layer 112B, conductor layer 112B includes at least one of a conductive resin layer and a metal layer. Conductor layer 112B may be only a conductive resin layer or only a metal layer. Preferably, conductor layer 112B covers the entire surface of solid electrolyte layer 112A.

[0114] Examples of the conductive resin layer include a conductive adhesive layer containing at least one conductive filler selected from the group consisting of a silver filler, a copper filler, a nickel filler, and a carbon filler.

[0115] As the metal layer, for example, metal plating, metal foil, etc. can be cited. Preferably, the metal layer is composed of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as main components. In addition, "main component" refers to the element component with the largest weight ratio.

[0116] In the case where the conductor layer 112B includes a carbon layer 112Ba and a copper layer 112Bb, the carbon layer 112Ba is provided to electrically and mechanically connect the solid electrolyte layer 112A to the copper layer 112Bb. The carbon layer 112Ba can be formed in a predetermined area by applying carbon paste to the solid electrolyte layer 112A using a method such as sponge transfer, screen printing, dispenser coating, inkjet printing, etc. In addition, it is preferred that the carbon layer 112Ba is laminated with the copper layer 112Bb of the next process in a sticky state before drying. The thickness of the carbon layer 112Ba is preferably greater than 2 μm and less than 20 μm.

[0117] When the conductor layer 112B includes the carbon layer 112Ba and the copper layer 112Bb, the copper layer 112Bb can be formed by applying a copper paste on the carbon layer 112Ba by sponge transfer, screen printing, spray coating, dispenser coating, inkjet printing, etc. The thickness of the copper layer 112Bb is preferably 2 μm or more and 20 μm or less.

[0118] The sealing layer 120 is made of an insulating material. Preferably, the sealing layer 120 is made of an insulating resin. Examples of the insulating resin constituting the sealing layer 120 include epoxy resins and phenolic resins. Furthermore, preferably, the sealing layer 120 includes a filler. Examples of the filler included in the sealing layer 120 include inorganic fillers such as silica particles, alumina particles, and metal particles.

[0119] exist Figure 8 In the example shown, the sealing layer 120 is provided on both main surface sides of the capacitor unit 110, but it may be provided on only one main surface side. The sealing layer 120 provided on one main surface side of the capacitor unit 110 may be composed of only one layer or may be composed of two or more layers. When the sealing layer 120 is composed of two or more layers, the materials constituting each layer may be the same or different.

[0120] A layer such as a stress relaxation layer or a moisture-proof film may be provided between the capacitor unit 110 and the sealing layer 120 .

[0121] Preferably, the stress relaxation layer is composed of an insulating resin. Examples of the insulating resin constituting the stress relaxation layer include epoxy resin, phenolic resin, silicone resin, and the like. Furthermore, preferably, the stress relaxation layer contains a filler. Examples of the filler contained in the stress relaxation layer include inorganic fillers such as silica particles, alumina particles, and metal particles. Preferably, the insulating resin constituting the stress relaxation layer is different from the insulating resin constituting the sealing layer 120.

[0122] The sealing layer 120 is required to have properties such as close adhesion with external electrodes (for example, external wiring layers 151 and 152) as an outer casing, so it is difficult to generally match the linear expansion coefficient with the capacitor unit 110 or select a resin with an arbitrary elastic modulus. In this regard, by providing a stress relaxation layer, it is possible to adjust the thermal stress design without losing the functions of the capacitor unit 110 and the sealing layer 120.

[0123] Preferably, the moisture permeability of the stress relaxation layer is lower than the moisture permeability of the sealing layer 120. In this case, in addition to the adjustment of the stress, it is also possible to reduce the penetration of moisture into the capacitor unit 110. The moisture permeability of the stress relaxation layer can be adjusted by the type of insulating resin constituting the stress relaxation layer, the amount of filler contained in the stress relaxation layer, and the like.

[0124] Preferably, the insulating material 122 filled between the second through-hole conductor 132 and the capacitor unit 110 is composed of an insulating resin. Examples of the insulating resin constituting the insulating material 122 include epoxy resins and phenolic resins. Furthermore, preferably, the insulating material 122 includes a filler. Examples of the filler included in the insulating material 122 include inorganic fillers such as silica particles, alumina particles, and metal particles.

[0125] Alternatively, the insulating material 122 may be made of the same material as the sealing layer 120. Figure 8 As shown, the sealing layer 120 is filled between the second via-hole conductor 132 and the capacitor unit 110 .

[0126] Alternatively, the insulating material 122 may be formed of the same material as the above-mentioned stress relaxation layer. For example, when the capacitor element 80 includes the stress relaxation layer, the stress relaxation layer may be filled between the second via conductor 132 and the capacitor unit 110 .

[0127] The thermal expansion coefficient of the insulating material 122 may be larger, smaller, or the same as the thermal expansion coefficient of the material (for example, copper) constituting the first through-hole conductor 131 or the second through-hole conductor 132 .

[0128] When a resin filling portion 124 is provided inside the first through-hole conductor 131 or the second through-hole conductor 132, the thermal expansion coefficient of the material constituting the resin filling portion 124 may be larger, smaller, or the same as the thermal expansion coefficient of the material constituting the first through-hole conductor 131 or the second through-hole conductor 132 (e.g., copper).

[0129] When the insulating layer 126 is provided around the first through-hole conductor 131 or the second through-hole conductor 132, the insulating layer 126 is preferably made of an insulating resin. Examples of the insulating resin constituting the insulating layer 126 include polyphenylsulfone resin, polyethersulfone resin, cyanate resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), polyimide resin, polyamide-imide resin, epoxy resin, and derivatives or precursors thereof.

[0130] The insulating layer 126 may be made of the same resin as the sealing layer 120. If the insulating layer 126 contains an inorganic filler different from the sealing layer 120, it may adversely affect the effective capacitance of the capacitor unit 110. Therefore, the insulating layer 126 is preferably made of a single resin.

[0131] The insulating layer 126 can be formed, for example, by applying a masking material such as a composition containing an insulating resin to the surface of the porous portion 111B by a method such as sponge transfer, screen printing, dispenser coating, or inkjet printing.

[0132] The thickness of the insulating layer 126 from the surface of the porous portion 111B is preferably 20 μm or less. The thickness of the insulating layer 126 from the surface of the porous portion 111B may be 0 μm, but is preferably 2 μm or more.

[0133] The insulating layer 126 may fill the inside of the porous portion 111B and be provided on the surface of the porous portion 111B above the filled portion. That is, the thickness of the insulating layer 126 may be greater than the thickness of the porous portion 111B.

[0134] Alternatively, an anode connection layer may be provided between the first through-hole conductor 131 and the end surface of the anode plate 111. That is, the first through-hole conductor 131 may be electrically connected to the end surface of the anode plate 111 via the anode connection layer. When the anode connection layer is provided between the first through-hole conductor 131 and the end surface of the anode plate 111, the anode connection layer functions as a barrier layer for the anode plate 111. As a result, by suppressing the dissolution of the anode plate 111 generated during the treatment of the chemical solution for forming the wiring layer such as the external wiring layer 151, it is possible to prevent the chemical solution from penetrating into the capacitor portion 110, thereby improving the reliability of the capacitor element 80.

[0135] When an anode connection layer is provided between the first through-hole conductor 131 and the end surface of the anode plate 111, the anode connection layer includes, for example, a first anode connection layer mainly made of zinc and a second anode connection layer mainly made of nickel or copper in order from the anode plate 111. For example, after the first anode connection layer is formed on the end surface of the anode plate 111 by zincate treatment to cause zinc substitution precipitation, the second anode connection layer is formed on the first anode connection layer by electroless nickel plating or electroless copper plating. In addition, there is also a case where the first anode connection layer disappears, in which case the anode connection layer may include only the second anode connection layer.

[0136] Furthermore, the anode connection layer may not be provided between the first through-hole conductor 131 and the end surface of the anode plate 111. In this case, the first through-hole conductor 131 and the end surface of the anode plate 111 may be directly connected.

[0137] Preferably, if Fig. 9 As shown, the first through-hole conductor 131 is electrically connected to the end surface of the first electrode layer (e.g., the anode plate 111) over the entire circumference. In this case, the contact area between the first through-hole conductor 131 and the first electrode layer becomes larger, thereby reducing the connection resistance with the first through-hole conductor 131, thereby reducing the equivalent series resistance (ESR) of the capacitor element 80. In addition, the adhesion between the first through-hole conductor 131 and the first electrode layer becomes higher, so that the undesirable situation such as peeling at the connection surface caused by thermal stress is not easy to occur.

[0138] Examples of the constituent material of the external wiring layers 151 and 152 include low-resistance metals such as silver, gold, and copper. The constituent material of the external wiring layer 151 may be the same as or different from the constituent material of the external wiring layer 152. The external wiring layers 151 and 152 are formed by, for example, plating treatment or the like.

[0139] In order to improve the tightness between the external wiring layer 151 or 152 and other components, for example, the tightness between the external wiring layer 151 and the first through-hole conductor 131 or the tightness between the external wiring layer 152 and the second through-hole conductor 132, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin may be provided as a constituent material of the external wiring layers 151 and 152.

[0140] Examples of the constituent material of via conductor 160 include low-resistance metals such as silver, gold, and copper. Via conductor 160 is formed by, for example, plating, heat treatment of a conductive paste, or the like.

[0141] In capacitor element 80 , one capacitor portion 110 may be disposed inside sealing layer 120 , or a plurality of capacitor portions 110 may be disposed.

[0142] When a plurality of capacitor units 110 are arranged inside the sealing layer 120, the adjacent capacitor units 110 can be physically disconnected from each other. Thus, the adjacent capacitor units 110 can be electrically disconnected or electrically connected. Preferably, the portions where the adjacent capacitor units 110 are disconnected from each other are filled with insulating materials such as the sealing layer 120. The intervals between the adjacent capacitor units 110 can be constant in the thickness direction or can be reduced in the thickness direction.

[0143] When a plurality of capacitor units 110 are arranged inside the sealing layer 120, the plurality of capacitor units 110 may be arranged in a manner arranged in the surface direction, may be arranged in a manner stacked in the thickness direction, or may be arranged in a combination of the two. The plurality of capacitor units 110 may be arranged regularly or irregularly. The size and shape of the capacitor units 110 may be the same, or may be partially or completely different. Preferably, the structures of the capacitor units 110 are the same, but capacitor units 110 with different structures may also be included.

[0144] The capacitor element 80 can be used appropriately as a constituent material of a composite electronic component. Such a composite electronic component includes, for example, a capacitor element 80; an external electrode (for example, an external wiring layer) provided on the outside of the capacitor element 80 (for example, the outside of the sealing layer) and electrically connected to the first electrode layer and the second electrode layer of the capacitor element 80, respectively; and an electronic component connected to the external electrode.

[0145] In the composite electronic component, the electronic component connected to the external electrode may be either a passive element or an active element. Both the passive element and the active element may be connected to the external electrode, or either the passive element or the active element may be connected to the external electrode. In addition, a composite of the passive element and the active element may be connected to the external electrode.

[0146] Examples of passive components include inductors, etc. Examples of active components include memories, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), and PMICs (Power Management ICs).

[0147] The capacitor element 80 has a sheet-like shape as a whole. Therefore, in the composite electronic component, the capacitor element 80 can be handled like a mounting substrate, and the electronic component can be mounted on the capacitor element 80. Moreover, by setting the shape of the electronic component mounted on the capacitor element 80 to be sheet-like, the capacitor element 80 and the electronic component can be connected in the thickness direction via a through-hole conductor that penetrates each electronic component in the thickness direction. As a result, the active component and the passive component can be configured as a module together.

[0148] For example, the capacitor element 80 can be electrically connected between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied, thereby forming a switching regulator.

[0149] In the composite electronic component, a circuit layer may be formed on any surface of a capacitor matrix sheet in which a plurality of capacitor elements 80 are further arranged, and a passive element or an active element may be connected thereto.

[0150] Alternatively, capacitor element 80 may be disposed in a cavity previously provided in the substrate, embedded in resin, and then a circuit layer may be formed on the resin. Alternatively, other electronic components (passive or active) may be mounted in other cavities of the substrate.

[0151] Alternatively, capacitor element 80 may be mounted on a smooth carrier such as a wafer or glass, and a circuit layer may be formed after the outer layer is formed with resin, and then connected to a passive element or an active element.

[0152] [Other embodiments]

[0153] The electronic device of the present invention is not limited to the above-described embodiment, and various applications and modifications can be made to the structure, manufacturing conditions, etc. of the electronic device within the scope of the present invention.

[0154] The following contents are disclosed in this specification.

[0155] <1>

[0156] An electronic device, wherein

[0157] The electronic device includes:

[0158] A wiring substrate having a first main surface and a second main surface facing each other in a thickness direction;

[0159] a first electronic component mounted on the first main surface of the wiring substrate;

[0160] a second electronic component mounted on the second main surface of the wiring substrate;

[0161] a first heat diffusion plate thermally connected to the first electronic component;

[0162] a second heat diffusion plate thermally connected to the second electronic component; and

[0163] A heat conductor is provided so as to penetrate the wiring substrate in the thickness direction and is thermally connected to the first heat diffusion plate and the second heat diffusion plate.

[0164] <2>

[0165] The electronic device according to <1>, wherein:

[0166] At least one of the first heat diffusion plate, the second heat diffusion plate, and the heat conductor has a gas-liquid exchange mechanism in an internal space.

[0167] <3>

[0168] The electronic device according to <1> or <2>, wherein:

[0169] The first heat diffusion plate, the second heat diffusion plate, and the heat conductor all have a gas-liquid exchange mechanism in their internal spaces.

[0170] <4>

[0171] The electronic device according to <3>, wherein:

[0172] The internal space of the heat conductor communicates with the internal space of the first heat diffusion plate or the second heat diffusion plate.

[0173] <5>

[0174] The electronic device according to any one of <1> to <4>, wherein:

[0175] The electronic device further includes a heat sink thermally connected to the first heat diffusion plate.

[0176] <6>

[0177] The electronic device according to <5>, wherein:

[0178] The power consumed by the current flowing through the load included in the first electronic component is greater than the power consumed by the current flowing through the load included in the second electronic component.

[0179] <7>

[0180] The electronic device according to <5> or <6>, wherein:

[0181] The first heat diffusion plate, the second heat diffusion plate and the heat conductor all have a gas-liquid exchange mechanism in their internal spaces.

[0182] The internal space of the heat conductor communicates with the internal space of the second heat diffusion plate.

[0183] <8>

[0184] The electronic device according to any one of <1> to <7>, wherein:

[0185] The surface of the first electronic component thermally connected to the first heat diffusion plate is a surface on the opposite side of the surface of the first electronic component electrically connected to the wiring substrate in the thickness direction.

[0186] The surface of the second electronic component thermally connected to the second heat diffusion plate is a surface on the opposite side of the surface of the second electronic component electrically connected to the wiring board in the thickness direction.

[0187] <9>

[0188] The electronic device according to any one of <1> to <8>, wherein:

[0189] There are two or more heat conductors.

[0190] <10>

[0191] The electronic device according to any one of <1> to <9>, wherein:

[0192] The heat conductor has a thread on its outer peripheral surface.

[0193] <11>

[0194] The electronic device according to any one of <1> to <10>, wherein:

[0195] The first heat diffusion plate, the second heat diffusion plate, and the heat conductor are electrically grounded to a housing of the electronic device or the wiring substrate.

[0196] <12>

[0197] The electronic device according to any one of <1> to <11>, wherein:

[0198] The first electronic component includes a semiconductor element for performing logic operations.

[0199] The second electronic component includes a voltage regulating circuit for supplying power to the semiconductor element of the first electronic component.

[0200] <13>

[0201] The electronic device according to any one of <1> to <12>, wherein:

[0202] The electronic device further includes a capacitor element disposed inside the wiring substrate.

[0203] The capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer, wherein the first electrode layer and the second electrode layer are opposed to each other in the thickness direction with the dielectric layer interposed therebetween.

[0204] The heat conductor is provided so as to penetrate the capacitor element in the thickness direction and is in contact with the capacitor element.

[0205] <14>

[0206] The electronic device according to <13>, wherein:

[0207] The first electrode layer is an anode plate having a core portion and a porous portion, wherein the core portion is made of metal and the porous portion is provided on at least one main surface of the core portion.

[0208] The dielectric layer is provided on the surface of the porous portion.

[0209] The second electrode layer is a cathode layer provided on the surface of the dielectric layer.

[0210] Description of Reference Numerals

[0211] 1, 2, electronic device; 10, wiring substrate; 11, first main surface; 12, second main surface; 20, first electronic component; 30, second electronic component; 40, first heat diffusion plate; 41, heat conductor; 50, second heat diffusion plate; 51, support ring; 52, edge portion; 60, heat conductor; 61, TIM; 62, threaded teeth; 63, fixing member; 70, heat sink; 80, 85, capacitor element; 110, capacitor portion; 111, anode plate; 111A, core; 111B, porous portion; 112, cathode layer; 112A, solid electrolyte layer; 112B, conductor layer; 112Ba, carbon layer; 112Bb, copper layer; 113, dielectric layer; 120, sealing layer; 122, insulating material; 124, resin filling portion; 126, insulating layer; 131, first through-hole conductor; 132, second through-hole conductor; 151, 152, external wiring layer; 160, via conductor.

Claims

1. An electronic device, wherein: The electronic device includes: A wiring substrate having a first main surface and a second main surface facing each other in a thickness direction; a first electronic component mounted on the first main surface of the wiring substrate; a second electronic component mounted on the second main surface of the wiring substrate; a first heat diffusion plate thermally connected to the first electronic component; a second heat diffusion plate thermally connected to the second electronic component; and A heat conductor is provided so as to penetrate the wiring substrate in the thickness direction and is thermally connected to the first heat diffusion plate and the second heat diffusion plate.

2. The electronic device according to claim 1, wherein: At least one of the first heat diffusion plate, the second heat diffusion plate, and the heat conductor has a gas-liquid exchange mechanism in an internal space.

3. The electronic device according to claim 1 or 2, wherein: The first heat diffusion plate, the second heat diffusion plate, and the heat conductor all have a gas-liquid exchange mechanism in their internal spaces.

4. The electronic device according to claim 3, wherein: The internal space of the heat conductor communicates with the internal space of the first heat diffusion plate or the second heat diffusion plate.

5. The electronic device according to any one of claims 1 to 4, wherein: The electronic device further includes a heat sink thermally connected to the first heat diffusion plate.

6. The electronic device according to claim 5, wherein: The power consumed by the current flowing through the load included in the first electronic component is greater than the power consumed by the current flowing through the load included in the second electronic component.

7. The electronic device according to claim 5 or 6, wherein: The first heat diffusion plate, the second heat diffusion plate, and the heat conductor all have a gas-liquid exchange mechanism in their internal spaces. The internal space of the heat conductor communicates with the internal space of the second heat diffusion plate.

8. The electronic device according to any one of claims 1 to 7, wherein: The surface of the first electronic component thermally connected to the first heat diffusion plate is a surface on the opposite side of the surface of the first electronic component electrically connected to the wiring substrate in the thickness direction. The surface of the second electronic component thermally connected to the second heat diffusion plate is a surface on the opposite side of the surface of the second electronic component electrically connected to the wiring substrate in the thickness direction.

9. The electronic device according to any one of claims 1 to 8, wherein: There are two or more heat conductors.

10. The electronic device according to any one of claims 1 to 9, wherein: The heat conductor has threads on its outer peripheral surface.

11. The electronic device according to any one of claims 1 to 10, wherein: The first heat diffusion plate, the second heat diffusion plate, and the heat conductor are electrically grounded to a housing of the electronic device or the wiring substrate.

12. The electronic device according to any one of claims 1 to 11, wherein: The first electronic component includes a semiconductor element for performing a logic operation. The second electronic component includes a voltage regulating circuit for supplying power to the semiconductor element of the first electronic component.

13. The electronic device according to any one of claims 1 to 12, wherein: The electronic device further includes a capacitor element disposed inside the wiring substrate. The capacitor element includes a first electrode layer, a second electrode layer, and a dielectric layer, wherein the first electrode layer and the second electrode layer are opposed to each other in the thickness direction with the dielectric layer interposed therebetween. The heat conductor is provided so as to penetrate the capacitor element in the thickness direction and is in contact with the capacitor element.

14. The electronic device according to claim 13, wherein: The first electrode layer is an anode plate having a core portion and a porous portion, the core portion being made of metal, and the porous portion being provided on at least one main surface of the core portion. The dielectric layer is provided on the surface of the porous portion. The second electrode layer is a cathode layer provided on the surface of the dielectric layer.

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