Pretreatment method of MO source conveying assembly in MOCVD equipment

Abstract

The invention provides a pretreatment method for an MO source conveying assembly in MOCVD equipment, and the method comprises the steps: determining a first target source bottle from at least one MO source bottle based on the type of a to-be-treated part; after the to-be-treated part is connected according to the connection position, a first branch pipe corresponding to the first target source bottle is conducted, so that an MO source in the first target source bottle flows through the to-be-treated part and the first main pipe and is discharged from the waste gas discharge end, or a second branch pipe corresponding to the first target source bottle is conducted, so that the MO source in the first target source bottle flows through the to-be-treated part and the second main pipe and is discharged from the waste gas discharge end; flowing to the reaction cavity; and after the usage amount of the MO source flowing through the to-be-treated part is greater than or equal to a usage amount threshold value, stopping conducting the first branch pipe or the second branch pipe corresponding to the first target source bottle so as to end pretreatment. According to the method, the spare part of the MO source conveying assembly can be pretreated in advance, when the part to be treated is applied to the MOCVD equipment, the recovery time can be shortened, and the yield can be increased.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a pretreatment method for a MO source delivery component in a MOCVD device. Background Art

[0002] Metal-organic chemical vapor deposition (MOCVD) is a key process technology for growing semiconductor thin film materials. It is widely used in the manufacture of semiconductor devices such as light-emitting diodes (LEDs), laser diodes (LDs), photodetectors, and solar cells. Through the MOCVD process, a uniform and complete semiconductor thin film can be deposited on the surface of a substrate, thereby achieving precise control and optimization of the performance of semiconductor devices. Therefore, MOCVD plays a crucial role in the semiconductor industry and promotes the development and progress of semiconductor devices.

[0003] A MOCVD device is a device that relies on the MOCVD process to work and is used to produce semiconductor devices. The MOCVD device includes a reaction chamber. When producing semiconductor devices, a metal-organic source (MO source) can be led to the reaction chamber through components such as a delivery pipeline, so that the MO source undergoes deposition in the reaction chamber to form a thin film or a coating and obtain an epitaxial wafer. However, MO source deposition easily occurs inside components such as the delivery pipeline, resulting in a reduction in production efficiency and also affecting product quality.

[0004] Therefore, in the actual production process, when too much MO source is deposited, the operation of the MOCVD device can be stopped and components such as the delivery pipeline with excessive deposition can be replaced. Then, the MOCVD device is restarted and one or several MO sources are delivered in components such as the delivery pipeline to remove interfering substances in components such as the delivery pipeline, so that the internal conditions of components such as the delivery pipeline meet the production requirements. However, this process takes a long time and affects product output. It can be seen that affected by the inapplicability of components such as the delivery pipeline after replacement to production, the problem of low production efficiency easily occurs during the production process of the MOCVD device. Summary of the Invention

[0005] The embodiments of the present application provide a pretreatment method for a MO source delivery component in a MOCVD device to solve the problem of low production efficiency of traditional MOCVD devices.

[0006] In a first aspect, an embodiment of the present application provides a pretreatment method for an MO source delivery component in an MOCVD device. The MOCVD device includes: at least one MO source bottle for providing an MO source; a reaction chamber for performing MOCVD deposition using the MO source; and an MO source delivery component including at least a first pipeline. The first pipeline includes a first main pipe and at least one first branch pipe. The first main pipe leads to an exhaust gas discharge end. One end of at least one first branch pipe is connected to at least one MO source bottle, and the other end is connected to the first main pipe so that the MO source flows into the first main pipe through the first branch pipe. The MO source delivery component further includes a second pipeline. The second pipeline includes a second main pipe and at least one second branch pipe. The second main pipe leads to the reaction chamber. One end of at least one second branch pipe is connected to at least one MO source bottle, and the other end is connected to the second main pipe so that the MO source flows into the second main pipe through the second branch pipe and then flows to the reaction chamber.

[0007] The method includes: determining a first target source bottle from at least one MO source bottle based on the category of the part to be processed, where the part to be processed is a spare part of the MO source delivery component; when the number of first target source bottles is one, determining the access position of the part to be processed as the first branch pipe or the second branch pipe corresponding to the first target source bottle; when the number of first target source bottles is multiple, determining the access position of the part to be processed as the target position on the first main pipe or the second main pipe, where along the flow direction of the MO source in the first pipeline, the target position is after the first branch pipe corresponding to any first target source bottle, or along the flow direction of the MO source in the second pipeline, the target position is after the second branch pipe corresponding to any first target source bottle; after the part to be processed is accessed according to the access position, opening the first branch pipe corresponding to the first target source bottle so that the MO source in the first target source bottle flows through the part to be processed and the first main pipe and is discharged from the exhaust gas discharge end, or opening the second branch pipe corresponding to the first target source bottle so that the MO source in the first target source bottle flows through the part to be processed and the second main pipe and flows to the reaction chamber; when the usage amount of the MO source flowing through the part to be processed is greater than or equal to the usage amount threshold, stopping opening the first branch pipe corresponding to the first target source bottle to end the pretreatment.

[0008] In an implementable manner, the step of opening the first branch pipe corresponding to the first target source bottle includes: determining a second target source bottle from at least one MO source bottle, where the second target source bottle at least includes the first target source bottle; and opening the first branch pipe corresponding to the second target source bottle.

[0009] In an implementable manner, after the usage amount of the MO source flowing through the workpiece to be processed is greater than or equal to the usage amount threshold, the step of stopping the conduction of the first branch pipe or the second branch pipe corresponding to the first target source bottle includes: when the access position of the workpiece to be processed is the first branch pipe or the first main pipe, if the flow rate of the MO source is greater than or equal to the first flow rate threshold, and if the usage amount of the MO source flowing through the workpiece to be processed is greater than or equal to the usage amount threshold, stop the conduction of the first branch pipe corresponding to the second target source bottle, and conduct the second branch pipe corresponding to the second target source bottle; when the access position of the workpiece to be processed is the second branch pipe or the second main pipe, if the usage amount of the MO source flowing through the workpiece to be processed is greater than or equal to the usage amount threshold, stop the conduction of the second branch pipe corresponding to the second target source bottle.

[0010] In an implementable manner, the MO source delivery assembly further includes a carrier gas pipeline through which a carrier gas flows, and the carrier gas pipeline leads to the reaction chamber; wherein, the carrier gas is nitrogen or argon.

[0011] In an implementable manner, the MO source delivery assembly further includes a mass flow controller and a pressure controller; the mass flow controller and the pressure controller are arranged on the first pipeline, the second pipeline, and / or the carrier gas pipeline.

[0012] In an implementable manner, the MO source delivery assembly further includes an MO tube; the MOCVD device further includes at least one two-way conduction valve, and the two-way conduction valve includes a flow inlet, a first outlet, and a second outlet; the MO source bottle is connected to the flow inlet through the MO tube, one end of the first branch pipe far from the first main pipe is connected to the first outlet, and one end of the second branch pipe far from the second main pipe is connected to the second outlet; the two-way conduction valve is used to conduct the first branch pipe and the second branch pipe so that the MO source flows to the first branch pipe or the second branch pipe.

[0013] In an implementable manner, the number of MO source bottles is multiple, and different types of MO sources are filled in the multiple MO source bottles respectively.

[0014] In an implementable manner, the types of MO sources include trimethylindium TMIn, cyclopentadienylmagnesium Cp2Mg, trimethylgallium TMGa, triethylgallium TEGa, trimethylaluminum TMAl, trimethylgallium TMGa, or trimethylarsine TMAs.

[0015] In a second aspect, an embodiment of the present application provides a method for restarting an MOCVD device, which is applied to an MOCVD device; wherein, the MOCVD device at least includes an MO source delivery assembly;

[0016] The method includes: detecting the content of the MO source inside the MO source delivery component and / or detecting the flow rate of the MO source inside the MO source delivery component; determining that the MOCVD device is in a fault state and stopping the operation of the MOCVD device when the content of the MO source inside the MO source delivery component exceeds the residual threshold and / or when the flow rate of the MO source inside the MO source delivery component is less than the third flow rate threshold; restarting the MOCVD device in response to the MO source delivery component being replaced with a spare part to be processed; the spare part to be processed is a spare part pretreated by the pretreatment method of any one of claims 1-8.

[0017] In a third aspect, an embodiment of the present application further provides an MOCVD system, including at least a controller and an MOCVD device. The controller is configured to execute the pretreatment method of the MO source delivery component in the MOCVD device in the first aspect and its various implementation manners, and execute the MOCVD device restart method in the second aspect to restart the MOCVD device after the MOCVD device fails.

[0018] The embodiment of the present application provides a pretreatment method for the MO source delivery component in an MOCVD device, so that the spare part of the MO source delivery component is pre-configured to a state that meets the production requirements. In this way, when too much MO source is deposited in the MO source delivery component, the MO source delivery component can be directly replaced with the spare part, shortening the restart time and improving the production yield and the qualified product rate. Description of the Drawings

[0019] To more clearly illustrate the technical solutions of the present application, the drawings required for the embodiments will be briefly introduced below. Obviously, for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0020] Figure 1 It is a schematic structural diagram of the MOCVD device provided by the embodiment of the present application;

[0021] Figure 2 It is a flowchart of the pretreatment method for the MO source delivery component in the MOCVD device provided by the embodiment of the present application;

[0022] Figure 3 It is a first schematic diagram showing the access of the spare part to be processed to the MOCVD device 10 in the embodiment of the present application;

[0023] Figure 4 It is a second schematic diagram showing the access of the spare part to be processed to the MOCVD device 10 in the embodiment of the present application;

[0024] Figure 5 It is a flowchart of the MOCVD device restart method provided by the embodiment of the present application.

[0025] Among them, 10 is an MOCVD device; 101, 101a, 101b, 101c, 101d, 101e are MO source bottles; 102 is a reaction chamber; 103 is an MO source delivery assembly; 104 is a two-way conduction valve; 1011 is an MO source; 1031 is a first pipeline; 1032 is a first main pipe; 1033 is a first branch pipe; 1034 is an exhaust gas discharge end; 1035 is a second pipeline; 1036 is a second main pipe; 1037 is a second branch pipe; 1038 is a carrier gas pipeline; 1039a is a filter; 1039b is a mass flow controller; 1039c is a pressure controller; 1041 is a flow inlet; 1042 is a first outlet; 1043 is a second outlet. Detailed implementation manners

[0026] Next, the technical solutions in the embodiments of the present application will be clearly described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, other embodiments obtained by those of ordinary skill in the art without creative efforts all fall within the protection scope of the present application.

[0027] Hereinafter, terms such as "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise stated, the meaning of "a plurality" is two or more.

[0028] In addition, in the present application, orientation terms such as "upper", "lower", "inner", "outer", etc. are defined relative to the orientation of the components shown in the accompanying drawings. It should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and they may change accordingly with the change of the orientation of the components placed in the accompanying drawings.

[0029] During the MOCVD growth process, components such as the delivery pipeline, for example, the pipeline for delivering the MO source, the filter screen (filter), and the mass flow controller (MFC) for measuring the flow rate of the MO source, etc., often accumulate impurities due to the residue of the MO source. The MFC is a device used to precisely control the flow rate of the MO source, and it can adjust and control the gas flow rate according to the preset flow rate value. However, over time, these impurities may cause the MFC to fail to reach the set flow rate value, which makes the flow rate of the MO source unable to be stably supplied, thereby affecting the normal production operation of the entire machine tool and the stability of the production process and the quality of the product. To solve this problem, it is necessary to replace the pipeline for delivering the MO source, the filter screen, and the MFC.

[0030] After replacing components such as the delivery pipeline, a series of operations need to be carried out at the MOCVD machine end to restore the normal operation of the machine. These operations include coating, aeration, preventive maintenance PM, etc. Specifically, coating refers to the process of depositing a thin film on the surface of a substrate through a chemical reaction using an MO source as one of the reaction substances. After replacing components such as the delivery pipeline, it is necessary to reconfigure the internal conditions of components such as the delivery pipeline, for example, delivering one or several MO sources in components such as the delivery pipeline to remove interfering substances in components such as the delivery pipeline, so that the internal conditions of components such as the delivery pipeline meet the production requirements and ensure that the MO source can enter the reaction chamber normally for coating operations. In addition, it is also necessary to make appropriate adjustments and calibrations to the machine to ensure the stability of the coating process and the reliability of the thin film quality.

[0031] However, the above operations take several days, and the brightness of the epitaxial wafers produced during the execution of the above process is low and cannot meet the brightness requirements in practical applications. It can be seen that although these operations have been carried out, the recovery performance of the machine is weak and a long machine recovery period is required, resulting in low production efficiency and affecting the output and yield.

[0032] The embodiment of the present application provides a pretreatment method for the MO source delivery component in an MOCVD device, so that the spare parts of the MO source delivery component are pre-configured to a state that meets the production requirements. In this way, when too much MO source is deposited in the MO source delivery component, the spare parts can be directly used to replace the MO source delivery component, shortening the machine recovery time and improving the output and yield.

[0033] Figure 1 It is a schematic structural diagram of the MOCVD device provided by the embodiment of the present application.

[0034] As Figure 1 shown, the embodiment of the present application provides an MOCVD device 10, and the pretreatment method for the MO source delivery component in the MOCVD device provided by the embodiment of the present application can be applied to the MOCVD device 10. The MOCVD device 10 may include at least one MO source bottle 101 for providing the MO source 1011.

[0035] In practical applications, the number of MO source bottles 101 may be multiple, and different types of MO sources 1011 are filled in the multiple MO source bottles 101 respectively. The types of MO sources 1011 may include trimethylindium TMIn, bis(cyclopentadienyl)magnesium Cp2Mg, trimethylgallium TMGa, triethylgallium TEGa, trimethylaluminum TMAl, trimethylgallium TMGa or trimethylarsine TMAs. The embodiment of the present application does not make specific limitations on this.

[0036] Figure 1Five MO source bottles 101, namely MO source bottle 101a, MO source bottle 101b, MO source bottle 101c, MO source bottle 101d, and MO source bottle 101e, are shown. Among them, trimethylgallium (TMGa) is filled in MO source bottle 101a, triethylgallium (TEGa) is filled in MO source bottle 101b, trimethylaluminum (TMAl) is filled in MO source bottle 101c, trimethylindium (TMIn) is filled in MO source bottle 101d, and bis(cyclopentadienyl)magnesium (Cp2Mg) is filled in MO source bottle 101e.

[0037] It should be noted that Figure 1 The number of MO source bottles 101 and the types of MO sources 1011 used in the growth process of gallium nitride (GaN) epitaxial wafers are exemplarily shown. In the actual production process, the number of MO source bottles 101 and the types of MO sources 1011 can be adjusted based on the different types of epitaxial wafers, and the embodiments of the present application do not make specific limitations on this.

[0038] The MOCVD device 10 may further include a reaction chamber 102. In practical applications, the MO source 1011 can be introduced into the reaction chamber 102 to perform MOCVD deposition in the reaction chamber 102 using the MO source 1011.

[0039] The MO source delivery assembly 103 includes at least a first pipeline 1031; the first pipeline 1031 includes a first main pipe 1032 and at least one first branch pipe 1033. The first main pipe 1032 leads to the exhaust gas discharge end 1034. One end of at least one first branch pipe 1033 is connected to at least one MO source bottle 101, and the other end is connected to the first main pipe 1032 to communicate, so that the MO source 1011 flows into the first main pipe 1032 through the first branch pipe 1033. In this way, the MO source 1011 can be discharged from the exhaust gas discharge end 1034 through the first main pipe 1032.

[0040] In practical applications, the first pipeline 1031 is also called the vent pipe.

[0041] Continuing to refer to Figure 1 , in the embodiments of the present application, the MO source delivery assembly 103 may further include a second pipeline 1035. The second pipeline 1035 may include a second main pipe 1036 and at least one second branch pipe 1037. The second main pipe 1036 leads to the reaction chamber 102. One end of at least one second branch pipe 1037 is connected to at least one MO source bottle 101, and the other end is connected to the second main pipe 1036 to communicate, so that the MO source 1011 flows into the second main pipe 1036 through the second branch pipe 1037 and then flows to the reaction chamber 102. In this way, the MO source can be deposited in the reaction chamber 102 to form a thin film or a coating to obtain an epitaxial wafer.

[0042] In practical applications, the second pipeline 1035 is also called the run pipe.

[0043] Continue to refer to Figure 1 , the MO source delivery assembly 103 may further include an MO tube 1012, and the MOCVD apparatus may further include at least one two-way on-off valve 104. The two-way on-off valve 104 may include an inlet 1041, a first outlet 1042, and a second outlet 1043.

[0044] Among them, the MO source bottle 101 is connected to the inlet 1041 through the MO tube 1012. One end of the first branch pipe 1033 away from the first main pipe 1032 is connected to the first outlet 1042, and one end of the second branch pipe 1037 away from the second main pipe 1036 is connected to the second outlet 1043. The two-way on-off valve 104 is used to conduct the first branch pipe 1033 and the second branch pipe 1037, so that the MO source 1011 flows to the first branch pipe 1033 or the second branch pipe 1037.

[0045] In practical applications, the two-way on-off valve 104 may conduct the first branch pipe 1033 and cut off the second branch pipe 1037, so that the MO source 1011 leads from the first main pipe 1032 to the exhaust gas discharge end 1034. The two-way on-off valve 104 may also conduct the second branch pipe 1037 and cut off the first branch pipe 1033, so that the MO source 1011 merges into the second main pipe 1036 and leads to the reaction chamber 102.

[0046] It can be understood that there is a one-to-one correspondence among the two-way on-off valve 104, the first branch pipe 1033, and the second branch pipe 1037.

[0047] In some implementation manners, continue to refer to Figure 1 , the MO source delivery assembly 103 may further include a carrier gas pipeline 1038. A carrier gas flows in the carrier gas pipeline 1038, and the carrier gas pipeline 1038 leads to the reaction chamber 102. Among them, the carrier gas is nitrogen or argon. The specific type of the carrier gas may be determined based on the type of epitaxial wafer produced by the MOCVD apparatus 10. For example, the carrier gas used for producing gallium nitride (GaN) is usually nitrogen or argon, and the embodiments of the present application do not make specific limitations thereto.

[0048] In practical applications, the second pipeline 1035 and the carrier gas pipeline 1038 may lead to a mixing chamber at the inlet of the reaction chamber 102, so that the MO source 1011 and the carrier gas are fully mixed in the mixing chamber. In the mixing chamber, it is necessary to precisely control the flow rate, pressure, and mixing ratio of the carrier gas and the MO source 1011, so as to ensure the uniform distribution of metal atoms in the reaction chamber, thereby realizing the uniform deposition of the thin film, so as to ensure the formation of a chemical environment suitable for thin film growth in the reaction chamber 102.

[0049] In some implementations, the MO source delivery assembly 103 further includes a filter 1039a, a mass flow controller MFC1039b, and a pressure controller PC 1039c. The filter 1039a can effectively remove impurities in the gas flow, such as grease, moisture, dust, etc. The filter 1039a can be located between the first main pipe 1032 and the exhaust gas discharge end 1034 to process the gas discharged from the first pipeline 1031. The filter 1039a can also be located at the discharge end of the reaction chamber 102 to process the exhaust gas discharged from the reaction chamber 102. Figure 1 Only the filter 1039b is shown as an example between the first main pipe 1032 and the exhaust gas discharge end 1034. MFC 1039b and pressure controller 1039c are arranged in the first pipeline 1031, the second pipeline 1035, and / or the carrier gas pipeline 1038. Among them, MFC 1039b is used to control the flow rate of MO source 1011, and pressure controller 1039c is used to measure the pressure in the pipeline. In the embodiment of the present application, MFC 1039b and pressure controller 1039c can be configured for each MO source bottle 101 to accurately control the amount of each MO source 1011. Figure 1 schematically shows the connection relationship between the MO source bottle 101a and the mass flow controller MFC 1039b and the pressure controller 1039c, and schematically shows the situation where the mass flow controller MFC 1039b and the pressure controller 1039c are set in the second pipeline 1035.

[0050] Figure 2 This is a flow chart of a pretreatment method for a MO source delivery component in an MOCVD device provided in an embodiment of the present application.

[0051] If Figure 1 and Figure 2 As shown in FIG. 1 , the pretreatment method of the MO source delivery component in the MOCVD device provided in the embodiment of the present application includes the following steps S100-S500.

[0052] S100: Based on the category of the part to be processed, determine a first target source bottle from at least one MO source bottle; wherein the part to be processed is a spare part of the MO source conveying component 103.

[0053] ​​Among them, based on the category of the MO source delivery component 103, the parts to be processed can be spare parts of the first pipeline 1031, the second pipeline 1035, the carrier gas pipeline 1038, the filter 1039a, the MFC 1039b, and the pressure controller 1039c. In practical applications, different MO sources 1011 can be introduced into different parts to be processed to remove interfering substances in the parts to be processed, so that the internal conditions of the parts to be processed meet the production requirements. Based on the category of the MO source delivery component 103, different parts to be processed should be configured with different internal conditions. For example, some MO source delivery components 103 only need to introduce trimethylindium TMIn, and another MO source delivery component 103 needs to introduce the MO source delivery component 103 and bis(cyclopentadienyl)magnesium Cp2Mg. The specific types of MO sources 1011 to be introduced can be determined according to the actual situation, and the embodiments of the present application do not make specific limitations on this.

[0054] Based on the category of the part to be processed (MO source delivery component 103), it can be determined what kind of MO source 1011 needs to be introduced into the part to be processed. In the embodiments of the present application, the MO source bottle 101 corresponding to the MO source 1011 required by the part to be processed can be determined as the first target source bottle, so as to determine the MO source bottle 101 that needs to establish a connection relationship with the part to be processed from one or more MO source bottles 101.

[0055] S200: When the number of the first target source bottles is one, determine the access position of the part to be processed as the first branch pipe 1033 or the second branch pipe 1037 corresponding to the first target source bottle.

[0056] It can be understood that when the number of the first target source bottles is one, only the MO source 1011 in one first target source bottle needs to flow through the part to be processed. Therefore, based on the one-to-one correspondence between the MO source bottle 101 and the first branch pipe 1033 or the second branch pipe 1037, the part to be processed can be connected to the first branch pipe 1033 of the first target source bottle. In this way, the MO source 1011 flowing from the MO source bottle 101 into the first branch pipe 1033 can further flow into the part to be processed, then flow out of the part to be processed and merge into the first main pipe 1032, and finally be discharged from the exhaust gas discharge end 1034. Or, the MO source 1011 flowing from the MO source bottle 101 into the second branch pipe 1037 can further flow into the part to be processed, then flow out of the part to be processed and merge into the second main pipe 1036, and finally flow to the reaction chamber 102.

[0057] Exemplarily, the specific access means for the workpiece to be processed may be to open a first interface and a second interface in the first branch pipe 1033. The first interface is used to communicate with the inflow end of the workpiece to be processed, and the second interface is used to communicate with the outflow end of the workpiece to be processed. In this way, the MO source 1011 can flow into the workpiece to be processed through the first interface and flow out of the workpiece to be processed through the second interface. In actual applications, the specific connection method between the first branch pipe 1033 and the workpiece to be processed can be determined based on the category of the workpiece to be processed, and the embodiments of the present application do not make specific limitations on this.

[0058] Figure 3 This is the first schematic diagram showing the access of the workpiece to be processed to the MOCVD device 10 shown in the embodiments of the present application.

[0059] As Figure 3 shown in (a) therein, based on the category of the workpiece to be processed, it can be determined that the MO source 1011 to be introduced into the workpiece to be processed is trimethylgallium TMGa. At this time, the access position of the workpiece to be processed can be the first branch pipe 1033 corresponding to the MO source bottle 101a. In this way, trimethylgallium TMGa can flow through the workpiece to be processed.

[0060] As Figure 3 shown in (b) therein, based on the category of the workpiece to be processed, it can be determined that the MO source 1011 to be introduced into the workpiece to be processed is trimethylindium TMIn. The access position of the workpiece to be processed can be the second branch pipe 1037 corresponding to the MO source bottle 101d. In this way, trimethylindium TMIn can flow through the workpiece to be processed. It should be noted that Figure 3 PC 1039c and MFC 1039b are not shown therein, and the specific positions of PC 1039c and MFC 1039b can be referred to Figure 1 .

[0061] S300: When the number of the first target source bottles is multiple, determine the access position of the workpiece to be processed as the target position on the first main pipe 1032 or the second main pipe 1036.

[0062] Among them, along the flow direction of the MO source 1011 in the first pipeline 1031, the target position is located after the first branch pipe 1033 corresponding to any first target source bottle. Or, along the flow direction of the MO source 1011 in the second pipeline 1035, the target position is located after the second branch pipe 1037 corresponding to any first target source bottle.

[0063] When the number of the first target source bottles is multiple, each MO source 1011 in each first target source bottle should flow through the piece to be processed. Therefore, the piece to be processed should be connected to the first main pipe 1032 or the second main pipe 1036. Along the flow direction of the MO source 1011 in the first pipeline 1031, the target position where the piece to be processed is connected should be after the first branch pipe 1033 corresponding to any first target source bottle, that is, the piece to be processed should be connected after the first branch pipe 1033 corresponding to the last first target source bottle. Or, along the flow direction of the MO source 1011 in the second pipeline 1035, the target position where the piece to be processed is connected should be after the second branch pipe 1037 corresponding to any first target source bottle, that is, the piece to be processed should be connected after the second branch pipe 1037 corresponding to the last first target source bottle. In this way, the MO source 1011 in each first target source bottle can enter the first main pipe 1032 through its corresponding first branch pipe 1033 and then flow into the piece to be processed, or the MO source 1011 in each first target source bottle can enter the second main pipe 1036 through its corresponding second branch pipe 1037 and then flow into the piece to be processed. In practical applications, the specific connection manner between the first main pipe 1032 and the piece to be processed can be determined based on the category of the piece to be processed, and the embodiments of the present application do not make specific limitations on this.

[0064] Figure 4 This is the second schematic diagram showing the connection of the piece to be processed to the MOCVD device 10 shown in the embodiments of the present application.

[0065] As Figure 4 shown in (a) therein, based on the category of the piece to be processed, it can be determined that the MO sources 1011 to be introduced into the piece to be processed are trimethylgallium TMGa, triethylgallium TEGa, and trimethylaluminum TMAl. Then, the connection position of the piece to be processed can be after the first branch pipe 1033 corresponding to the MO source bottle 101c and before the first branch pipe 1033 corresponding to the MO source bottle 101d. In this way, trimethylgallium TMGa, triethylgallium TEGa, and trimethylaluminum TMAl can flow through the piece to be processed.

[0066] As Figure 4 shown in (b) therein, based on the category of the piece to be processed, it can be determined that the MO sources 1011 to be introduced into the piece to be processed are trimethylindium TMIn, bis(cyclopentadienyl)magnesium Cp2Mg, trimethylgallium TMGa, triethylgallium TEGa, and trimethylaluminum TMAl. Then, the connection position of the piece to be processed can be after the first branch pipes 1033 corresponding to all the MO source bottles 101 and before the exhaust gas discharge end 1034. In this way, trimethylindium TMIn, bis(cyclopentadienyl)magnesium Cp2Mg, trimethylgallium TMGa, triethylgallium TEGa, and trimethylaluminum TMAl can flow through the piece to be processed.

[0067] It should be noted that Figure 4PC 1039c and MFC 1039b are not shown in the figure, and for the specific positions of PC 1039c and MFC 1039b, reference can be made to Figure 1 .

[0068] In the embodiments of the present application, for example, light-emitting diodes can be provided on the first branch pipe 1033 and the first main pipe 1032. After the access position of the workpiece to be processed is determined, a first signal can be generated. In response to the first signal, the light-emitting diode corresponding to the first branch pipe 1033 at the access position or the light-emitting diode at the target position can emit a flashing light to inform the user of the specific access position of the workpiece to be processed. The access position of the workpiece to be processed can be determined based on the actual situation, and the embodiments of the present application do not make specific limitations thereto.

[0069] In some implementation manners, based on devices such as a concentration sensor, a thickness sensor, or a flow sensor, etc., the concentration of the MO source 1011 inside the MO source delivery component 103 can be measured, the thickness of the MO source 1011 deposited on the inner wall can be detected, or the flow rate of the MO source 1011 inside the MO source delivery component 103 can be detected. Subsequently, the concentration can be compared with a concentration threshold. If the concentration is lower than the concentration threshold, then a second signal can be generated. Alternatively, the thickness can be compared with a thickness threshold. If the thickness is greater than the thickness threshold, then a second signal can be generated. Alternatively, the flow rate can be compared with a third flow rate threshold. If the flow rate is lower than the third flow rate threshold, then a second signal can be generated. The concentration threshold, the thickness threshold, and the third flow rate threshold can be determined based on the actual situation, and the embodiments of the present application do not make specific limitations thereto.

[0070] In response to the second signal, the category of the MO source delivery component 103 that needs to be replaced soon can be obtained. Subsequently, a third signal can be generated, and the third signal is different for different categories of the MO source delivery component 103. Subsequently, based on the third signal, the user can be reminded of the category of the spare part that needs preprocessing.

[0071] S400: After the workpiece to be processed is accessed according to the access position, the first branch pipe 1033 corresponding to the first target source bottle is conducted, so that the MO source in the first target source bottle flows through the workpiece to be processed and the first main pipe 1032, and is discharged from the exhaust gas discharge end 1034. Alternatively, the second branch pipe 1037 corresponding to the first target source bottle is conducted, so that the MO source in the first target source bottle flows through the workpiece to be processed and the second main pipe 1036, and flows to the reaction chamber 102.

[0072] In practical applications, in response to the access of the to-be-processed part to the first branch pipe 1033 or the first main pipe 1032, the first branch pipe 1033 corresponding to the first target source bottle can be connected. In this way, the MO source can flow into the first branch pipe 1033 and the first main pipe 1032. In response to the access of the to-be-processed part to the second branch pipe 1037 or the second main pipe 1036, the second branch pipe 1037 corresponding to the first target source bottle can be connected. In this way, the MO source can flow into the second branch pipe 1037 and the second main pipe 1036.

[0073] In the embodiment of the present application, pressure sensors can be set at the access positions of the first branch pipe 1033, the first main pipe 1032, the second branch pipe 1037 and the second main pipe 1036. The pressure sensors can detect whether there is a part to be processed connected. When the pressure sensor detects that there is a part to be processed connected, a fourth signal can be generated. The fourth signal is different based on the different access positions. In response to the fourth signal, the corresponding first branch pipe 1033 or the second branch pipe 1037 can be turned on.

[0074] It is worth noting that step S400 can be performed every time the MOCVD device 10 starts the production process. Specifically, when it is necessary to deposit the MO source 1011 on the surface of the substrate to form a thin film to produce an epitaxial wafer, the substrate needs to be placed in the reaction chamber 102 first, and then the MOCVD device 10 is started to allow the MO source 1011 to pass into the reaction chamber 102. At this time, since the flow of the MO source 1011 is unstable during the startup phase, if the MO source 1011 is directly passed into the reaction chamber 102, uneven deposition is likely to occur, resulting in uneven film thickness. Therefore, in the embodiment of the present application, after starting the MOCVD device 10, it includes a preparation phase and a production phase. In the preparation phase, the two-way conducting valve 104 can be used to conduct the first branch pipe 1033 so that the MO source 1011 is discharged from the first branch pipe 1033, the first main pipe 1032 and the exhaust gas discharge end 1034. The production stage includes cutting off the first branch pipe 1033 and connecting the second branch pipe 1037 after the flow of the MO source 1011 is stable.

[0075] Therefore, each time the MOCVD device 10 starts the production process and enters the preparation stage, the step of connecting the first branch pipe 1033 corresponding to the first target source bottle is performed. Then, before the flow of the MO source 1011 is stable, the MO source 1011 can be applied to the pretreatment process of the workpiece to be treated, which can achieve waste gas reuse and save costs. After the MOCVD device 10 enters the production stage, the MO source 1011 flowing in the second branch pipe 1037 or the second main pipe 1036 in the production stage is used to pretreat the workpiece to be treated. Since the flow of the MO source 1011 in the production stage is large and stable, the pretreatment time can be shortened and the pretreatment effect can be improved.

[0076] ​Step S400 may specifically include the following steps.

[0077] S401: Determine a second target source bottle from at least one MO source bottle 101, where the second target source bottle includes at least the first target source bottle.

[0078] In the embodiments of the present application, the second target source bottle is determined based on the specific production process of the epitaxial wafer. For example, in some epitaxial wafer production processes, only trimethylgallium (TMGa), a type of MO source 1011, is required. Then the second target source bottle can be MO source bottle 101a. In some epitaxial wafer production processes, two types of MO sources 1011, namely trimethylgallium (TMGa) and triethylgallium (TEGa), are required. Then the second target source bottle can be MO source bottle 101a and MO source bottle 101b.

[0079] S402: Turn on the first branch pipe 1033 or the second branch pipe 1037 corresponding to the second target source bottle.

[0080] In this way, when the workpiece to be processed is connected to the first main pipe 1032 or the first branch pipe 1033, the preprocessing process of the workpiece to be processed can overlap with the preparation stage of the epitaxial wafer production, so that the utilization rate of the MO source 1011 reaches the highest. When the workpiece to be processed is connected to the second main pipe 1036 or the second branch pipe 1037, the preprocessing process of the workpiece to be processed can overlap with the production stage of the epitaxial wafer production. When the workpiece to be processed is applied to the MOCVD equipment, the restart time of the MOCVD equipment can be shortened, and the yield rate can be improved.

[0081] In some implementation manners, it is also possible not to consider which specific MO source bottle or bottles 101 the second target source bottle is. When the MOCVD equipment starts the production process each time, in the preparation stage, the first branch pipe 1033 corresponding to each first target source bottle can be turned on, and the first branch pipe 1033 corresponding to each second target source bottle can be turned on to preprocess the workpiece to be processed. In the production stage, the second branch pipe 1037 corresponding to each second target source bottle is turned on.

[0082] S500: After the usage amount of the MO source 1011 flowing through the workpiece to be processed is greater than or equal to the usage amount threshold, stop turning on the first branch pipe 1033 or the second branch pipe 1037 corresponding to the first target source bottle to end the preprocessing.

[0083] In the embodiments of the present application, after the first branch pipe 1033 is turned on, the usage amount of the MO source 1011 in the first target source bottle can be collected. Then, based on the usage amount, it is determined whether the preprocessing ends. The usage amount threshold can be determined based on the actual situation, and the embodiments of the present application do not make specific limitations on this.

[0084] In some implementations, the preprocessing may end when the usage amount of the MO source 1011 in each first target source bottle is greater than or equal to the usage threshold. Alternatively, the preprocessing may end when the usage amount of the MO source 1011 in one of the first target source bottles is greater than or equal to the usage threshold. The embodiments of the present application do not make specific limitations in this regard.

[0085] It should be noted that in actual applications, each time the MOCVD device starts a production process and produces a batch of epitaxial wafers, it is called "1 run", which can also be called a growth batch. The embodiments of the present application can also determine the time to end the preprocessing based on the number of "runs". For example, after the workpiece to be processed is connected, if the MOCVD device has experienced 100 runs, it means that the workpiece to be processed has been processed and the preprocessing can be ended.

[0086] Therefore, in the embodiments of the present application, the number of "runs" after the workpiece to be processed is connected can be collected, and when the number reaches the preset number threshold, the conduction of the first branch pipe 1033 corresponding to the first target source bottle is stopped, and the preprocessing is ended. In some implementations, in the embodiments of the present application, when the number of "runs" after the workpiece to be processed is connected reaches the preset number threshold, a fifth signal may be sent to the two-way conduction valve 104. In response to the fifth signal, the two-way conduction valve 104 stops conducting the first branch pipe 1033 corresponding to the first target source bottle. And the fifth signal can be used to notify the user that the preprocessing is completed, and then the workpiece to be processed can be removed and reserved.

[0087] In some implementations, the specific range of "run" can be 1 - 1000 runs, which can be determined based on the actual production and manufacturing process. The embodiments of the present application do not make specific limitations in this regard.

[0088] In the embodiments of the present application, step S500 may include the following steps.

[0089] S501: When the connection position of the workpiece to be processed is the first branch pipe 1033 or the first main pipe 1032, if the flow rate of the MO source 1011 is greater than or equal to the first flow rate threshold, and the usage amount of the MO source flowing through the workpiece to be processed is greater than or equal to the usage threshold, stop conducting the first branch pipe 1033 corresponding to the second target source bottle, and conduct the second branch pipe 1037 corresponding to the second target source bottle.

[0090] S502: When the connection position of the workpiece to be processed is the second branch pipe 1037 or the second main pipe 1036, if the usage amount of the MO source 1011 flowing through the workpiece to be processed is greater than or equal to the usage threshold, stop conducting the second branch pipe 1037 corresponding to the second target source bottle.

[0091] Among them, the magnitude of the first flow threshold can be determined based on actual conditions, and the embodiments of the present application do not make specific limitations thereon. The flow rate of the MO source 1011 can be collected by the MFC 1039b.

[0092] In some implementation manners, an MFC 1039b can be disposed between the first main pipe 1032 and the exhaust gas discharge end 1034, and the MFC 1039b is used to measure the flow rate of the MO source 1011 in the first main pipe 1032 to determine whether the flow rate of the MO source 1011 is greater than or equal to the first flow threshold.

[0093] When the usage amount of the MO source 1011 flowing through the workpiece to be processed is greater than or equal to the usage threshold, it indicates that the pretreatment of the workpiece to be processed is completed. When the flow rate of the MO source 1011 is greater than or equal to the first flow threshold, it indicates that the preparation stage is completed and the production stage can be entered. Therefore, the second branch pipe 1037 corresponding to the second target source bottle can be turned on to enable the MO source 1011 to flow into the reaction chamber 102. The specific value of the first flow threshold can be determined based on actual conditions, and the embodiments of the present application do not make specific limitations thereon.

[0094] In some implementation manners, the MFC 1039b can be used to obtain the MO source 1011 introduction amount of each first target source bottle to obtain the total introduction amount of the first target source bottle.

[0095] In the embodiments of the present application, when the flow rate of the MO source 1011 is greater than or equal to the first flow threshold and the usage amount of the MO source flowing through the workpiece to be processed is greater than or equal to the usage threshold, the first branch pipe 1033 corresponding to the second target source bottle is stopped from being turned on, and the second branch pipe 1037 corresponding to the second target source bottle is turned on. In this way, the production stage can be entered after the flow rate of the MO source 1011 is stable, avoiding the production of defective products.

[0096] It should be supplemented that in step S502, the timing of stopping the conduction of the second branch pipe 1037 corresponding to the second target source bottle can be when the usage amount of the MO source 1011 flowing through the workpiece to be processed is greater than or equal to the usage threshold and the current "run" ends.

[0097] Continue to refer to Figure 1 , the MOCVD device 10 provided by the embodiments of the present application may further include at least one spare pipeline. The spare pipeline can be configured with a MO source bottle 101. The spare pipeline refers to the pipeline that is not in the process of producing epitaxial wafers. Based on actual needs, the spare pipeline can be used to perform the pretreatment of the workpiece to be processed, and the embodiments of the present application do not make specific limitations thereon.

[0098] In summary, the embodiments of the present application provide a pretreatment method for a MO source delivery component in an MOCVD device. The method can be applied to the MOCVD device 10, and the method may include:

[0099] Based on the category of the parts to be processed, determine a first target source bottle from at least one MO source bottle; wherein, the parts to be processed are spare parts of the MO source delivery component; when the number of the first target source bottles is one, determine the access position of the parts to be processed as the first branch pipe or the second branch pipe corresponding to the first target source bottle; when the number of the first target source bottles is multiple, determine the access position of the parts to be processed as the target position on the first main pipe or the second main pipe; along the flow direction of the MO source in the first pipeline, the target position is after the first branch pipe corresponding to any first target source bottle, or, along the flow direction of the MO source in the second pipeline, the target position is after the second branch pipe corresponding to any first target source bottle; after the parts to be processed are connected according to the access position, conduct the first branch pipe corresponding to the first target source bottle, so that the MO source in the first target source bottle flows through the parts to be processed and the first main pipe, and is discharged from the exhaust gas discharge end, or, conduct the second branch pipe corresponding to the first target source bottle, so that the MO source in the first target source bottle flows through the parts to be processed and the second main pipe, and flows to the reaction chamber; after the usage amount of the MO source flowing through the parts to be processed is greater than or equal to the usage amount threshold, stop conducting the first branch pipe or the second branch pipe corresponding to the first target source bottle to end the pretreatment. The method provided by the embodiments of the present application can preprocess the spare parts of the MO source delivery component 103 in advance, and can overlap the process of preprocessing the parts to be processed with the preparation stage of the production of the MOCVD device 10, improving the utilization rate of the MO source 1011. When the parts to be processed are applied to the MOCVD device 10, the restart time of the MOCVD device 10 can be shortened, and the yield rate can be improved.

[0100] The embodiments of the present application further provide a method for restarting an MOCVD device. This method can be applied to the MOCVD device 10 in the foregoing embodiments. The MOCVD device 10 at least includes an MO source delivery component 103. The specific components included can refer to the foregoing embodiments and will not be elaborated here.

[0101] Figure 5 It is a flowchart of the method for restarting an MOCVD device provided by the embodiments of the present application.

[0102] As Figure 5 shown, the method for restarting an MOCVD device provided by the embodiments of the present application may include the following steps.

[0103] S600: Detect the content of the MO source 1011 inside the MO source delivery component 103, and / or detect the flow rate of the MO source 1011 inside the MO source delivery component 103.

[0104] Wherein, the content of the MO source 1011 may refer to the mass concentration, that is, in the MO source delivery component 103, how many milligrams or micrograms of the MO source 1011 are contained in one cubic meter of gas, which can be expressed in milligrams per cubic meter (mg / m 3) or micrograms per cubic meter (μg / m 3 ) It can be expressed. The content of the MO source 1011 can refer to the volume fraction, specifically, it can be expressed in ppm (parts per million) or ppb (parts per billion). For example, 1 ppm of the MO source 1011 means that there is 1 part of the MO source 1011 residue in one million parts of the gas. The embodiments of the present application do not make specific limitations on this.

[0105] In the embodiments of the present application, the flow rate of the MO source 1011 can be measured by the MFC 1039b.

[0106] S700: When the content of the MO source 1011 inside the MO source delivery component 103 exceeds the residue threshold, and / or when the flow rate of the MO source 1011 inside the MO source delivery component 103 is less than the third flow rate threshold, it is determined that the MOCVD device is in a fault state, and the operation of the MOCVD device is stopped.

[0107] Among them, the residue threshold and the third flow rate threshold can be determined based on the actual situation, and the third flow rate threshold is greater than the third flow rate threshold. The embodiments of the present application do not make specific limitations on this. Different types of MO source delivery components 103 may have different residue thresholds and third flow rate thresholds.

[0108] In the embodiments of the present application, other means can also be used to determine whether the MOCVD device is in a fault state. For example, the MO source delivery component 103 is separated by means of gas chromatography-mass spectrometry (GC-MS), and then mass spectrometry technology is used to identify and quantitatively analyze each component, so as to determine the content of MO residue. Another example is that the MO source 1011 can be converted into an atomic state by atomic absorption spectroscopy (AAS), and then the absorption spectrum intensity of specific metal elements is measured, and then the content of MO residue is determined. The embodiments of the present application do not make specific limitations on this.

[0109] S800: In response to the MO source delivery component being replaced with a part to be processed, the MOCVD device is restarted; the part to be processed is a spare part pretreated by the pretreatment method of the MO source delivery component in the MOCVD device in the above embodiments.

[0110] In the MOCVD device restart method provided by the embodiments of the present application, a spare part that has been pretreated can be used to replace the MO source delivery component with relatively serious MO source deposition. In this way, the restart time of the MOCVD device can be shortened, and at the same time, the production of defective products can be avoided and the yield can be improved.

[0111] The embodiment of the present application further provides a MOCVD system, which at least includes a controller and a MOCVD device 10. Among them, the controller is used for the pretreatment method of the MO source delivery component in the MOCVD device in the above embodiment, and executes the method for restarting the MOCVD device in the above embodiment to restart the MOCVD device after a failure of the MOCVD device.

[0112] It should be noted that those skilled in the art will readily think of other implementation manners of the present application after considering the specification and practicing the application disclosed herein. The present application is intended to cover any variations, uses, or adaptations of the present application, which follow the general principles of the present application and include the common general knowledge or conventional technical means in the technical field not disclosed in the present application. The specification and embodiments are only regarded as exemplary, and the true scope and spirit of the present application are pointed out by the following claims.

[0113] It should be understood that the present application is not limited to the exact structure already described and shown in the drawings, and various modifications and changes can be made without departing from its scope. The scope of the present application is only limited by the appended claims.

Claims

1. A pretreatment method for a MO source delivery component in a MOCVD device, It is characterized in that in, The MOCVD equipment comprises: At least one MO source bottle, used to provide MO source; A reaction chamber, used for performing MOCVD deposition using the MO source; The MO source delivery assembly at least comprises a first pipeline; the first pipeline comprises a first main pipe and at least one first branch pipe, the first main pipe leads to the exhaust gas discharge end, one end of the at least one first branch pipe is connected to the at least one MO source bottle, and the other end is connected to the first main pipe, so that the MO source flows into the first main pipe through the first branch pipe; The MO source delivery assembly also includes a second pipeline; The second pipeline includes a second main pipe and at least one second branch pipe, the second main pipe leads to the reaction chamber, one end of the at least one second branch pipe is connected to the at least one MO source bottle, and the other end is connected to the second main pipe, so that the MO source flows into the second main pipe through the second branch pipe and then flows to the reaction chamber; The method comprises: Based on the category of the part to be processed, determining a first target source bottle from the at least one MO source bottle; wherein the part to be processed is a spare part of the MO source delivery assembly; When the number of the first target source bottle is one, determining that the access position of the to-be-processed part is the first branch pipe or the second branch pipe corresponding to the first target source bottle; When there are multiple first target source bottles, the access position of the to-be-processed part is determined to be the target position of the first main pipe or the second main pipe; along the flow direction of the MO source in the first pipeline, the target position is located after the first branch pipe corresponding to any of the first target source bottles, or, along the flow direction of the MO source in the second pipeline, the target position is located after the second branch pipe corresponding to any of the first target source bottles; After the workpiece to be processed is connected according to the connection position, the first branch pipe corresponding to the first target source bottle is connected, so that the MO source in the first target source bottle flows through the workpiece to be processed and the first main pipe, and is discharged from the exhaust gas discharge end, or the second branch pipe corresponding to the first target source bottle is connected, so that the MO source in the first target source bottle flows through the workpiece to be processed and the second main pipe, and flows to the reaction chamber; After the usage amount of the MO source flowing through the workpiece to be processed is greater than or equal to the usage threshold, the first branch pipe or the second branch pipe corresponding to the first target source bottle is stopped from being connected to end the pretreatment.

2. The pretreatment method of the MO source delivery component in the MOCVD device according to claim 1, characterized in that: The step of connecting the first branch pipe or the second branch pipe corresponding to the first target source bottle includes: Determine a second target source bottle from the at least one MO source bottle, wherein the second target source bottle at least includes the first target source bottle; The first branch pipe or the second branch pipe corresponding to the second target source bottle is connected.

3. The pretreatment method of the MO source delivery component in the MOCVD device according to claim 2, characterized in that: After the usage amount of the MO source flowing through the workpiece to be processed is greater than or equal to the usage amount threshold, the step of stopping the first branch pipe or the second branch pipe corresponding to the first target source bottle includes: When the access position of the to-be-treated part is the first branch pipe or the first main pipe, if the flow rate of the MO source is greater than or equal to the first flow rate threshold, and if the usage amount of the MO source flowing through the to-be-treated part is greater than or equal to the usage threshold, stop connecting the first branch pipe corresponding to the second target source bottle, and connect the second branch pipe corresponding to the second target source bottle; When the access position of the treated part is the second branch pipe or the second main pipe, if the usage of the MO source flowing through the treated part is greater than or equal to the usage threshold, the second branch pipe corresponding to the second target source bottle is stopped from being connected.

4. The pretreatment method of the MO source delivery component in the MOCVD device according to claim 3, characterized in that: The MO source delivery assembly further includes a carrier gas pipeline, in which a carrier gas flows, and the carrier gas pipeline leads to the reaction chamber; Wherein, the carrier gas is nitrogen or argon.

5. The pretreatment method of the MO source delivery component in the MOCVD device according to claim 4, characterized in that: The MO source delivery assembly also includes a mass flow controller and a pressure controller; The mass flow controller and the pressure controller are arranged in the first pipeline, the second pipeline, and / or the carrier gas pipeline.

6. The pretreatment method of the MO source delivery component in the MOCVD device according to claim 3, characterized in that: The MO source delivery assembly also includes a MO tube; The MOCVD device further comprises at least one two-way conducting valve, the two-way conducting valve comprising an inlet, a first outlet and a second outlet; the MO source bottle is connected to the inlet through the MO tube, the end of the first branch pipe away from the first main pipe is connected to the first outlet, and the end of the second branch pipe away from the second main pipe is connected to the second outlet; The two-way conducting valve is used to conduct the first branch pipe and the second branch pipe so that the MO source flows to the first branch pipe or the second branch pipe.

7. The pretreatment method of the MO source delivery component in the MOCVD device according to claim 1, characterized in that: There are multiple MO source bottles, and different types of MO sources are respectively filled in the multiple MO source bottles.

8. The pretreatment method of the MO source delivery component in the MOCVD device according to claim 7, characterized in that: The types of the MO source include trimethylindium TMIn, biscyclopentadienylmagnesium Cp2Mg, trimethylgallium TMGa, triethylgallium TEGa, trimethylaluminum TMAl, trimethylgallium TMGa or trimethylarsenic TMAs.

9. A method for restoring a MOCVD device, characterized in that: Applied to MOCVD equipment; Wherein, the MOCVD equipment at least comprises MO source delivery assembly; The method comprises: Detecting the MO source content inside the MO source delivery component, and / or detecting the MO source flow inside the MO source delivery component; When the MO source content in the MO source delivery component exceeds a residual threshold value, and / or when the MO source flow rate in the MO source delivery component is less than a third flow rate threshold value, it is determined that the MOCVD device is in a fault state, and the MOCVD device is stopped; In response to the MO source delivery assembly being replaced with a part to be processed, the MOCVD device is restarted; the part to be processed is a spare part that has been pre-processed by the pre-processing method according to any one of claims 1-8.

10. A MOCVD system, characterized in that: At least including controller and MOCVD equipment, Wherein, the controller is used to execute the pretreatment method of the MO source delivery component in the MOCVD device described in any one of claims 1-8, and to execute the MOCVD device restoration method described in claim 9, so as to restore the MOCVD device after a failure of the MOCVD device.

Images