Electroplating device, equipment and method for TGV glass wafer

Abstract

The invention provides an electroplating device, equipment and method for a TGV glass wafer. The device comprises an electroplating bath, a wafer clamp and independent circulation control systems arranged on the two sides of the wafer clamp respectively. The independent circulation control system comprises a flow disturbing mechanism, a flow uniformizing mechanism, a moving device and an electroplating liquid circulation mechanism. The electroplating liquid circulating mechanism pumps electroplating liquid into the turbulent flow mechanism through an adjustable variable frequency pump, and the electroplating liquid is sequentially sprayed through the turbulent flow mechanism, buffered through the flow uniformizing mechanism and then flows to the wafer clamping position. According to the electroplating device for the TGV glass wafer, through pulse type frequency-adjustable pumped electroplating liquid double-side independent circulation control, control over the liquid pumping rate of the double-side electroplating liquid and stable circulation of the electroplating liquid during glass wafer through hole electroplating are achieved, metal ion diffusion and concentration distribution are effectively improved, and the electroplating efficiency is improved. And finally, optimal control on the TGV electroplating thickness and quality of the glass wafer is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor electroplating processing, and in particular, to an electroplating device, equipment and method for a TGV glass wafer. Background Art

[0002] With the rapid development of the field of artificial intelligence, the application of integrated circuits is developing towards a more diversified direction. Among them, advanced three-dimensional packaging technology is becoming a key means to achieve miniaturization and functional diversification of electronic products. In this field, the wide application of new materials and new technologies provides important opportunities for packaging miniaturization, including flexible substrates, TSV (Through-Silicon Via) interposer technology, TGV (Through-Glass Via) interposer technology, etc.

[0003] It is worth noting that glass materials have advantages such as no free moving charges, excellent dielectric properties, and a thermal expansion coefficient close to that of silicon. Therefore, the TGV through-glass via technology has become one of the research hotspots for vertical 3D interconnection, providing an ideal solution to solve the problem of poor insulation of TSV through-silicon vias. The TGV through-glass via technology is generally considered to be a key technology for the next generation of three-dimensional integration, and its core lies in the deep hole filling formation process and related devices.

[0004] In the prior art, the through-hole filling process of the TGV (Through-Glass Via) technology usually requires filling metal into the through-holes, and then using CMP (Chemical Mechanical Polishing Technology) to remove the metal layer on the outer surface of the through-holes to achieve surface planarization of the glass wafer after through-hole filling. However, there are some problems in the electroplating process of high aspect ratio through-holes:

[0005] 1. Existing electroplating equipment cannot accurately control the formation rate of the electroplating film. Therefore, during the electroplating process of micron-level glass wafer through-holes, there is a risk of through-hole blockage due to too fast film formation rate, which cannot meet the production requirements.

[0006] 2. When the prior art equipment electroplates micron-level glass wafer through-holes, the electroplating solution usually enters from one side of the through-hole, resulting in uneven thickness of the electroplating layer on the inner surface of the through-hole. This not only affects the stability of the device, but also may cause the part to fail during operation. Summary of the Invention

[0007] Aiming at the defects in the prior art, the object of the present invention is to provide an electroplating device, equipment and method for TGV glass wafers. Through the pulsating and frequency-adjustable bilateral independent circulation control of the pumped electroplating solution, independent control of the flow rate, temperature and jet injection effect of the pumped electroplating solution can be further assisted to improve the uniformity of the electroplating layer thickness on the inner surface of the through holes of micron-level glass wafers.

[0008] To achieve the above-mentioned invention object of the present invention, the following technical solutions are adopted:

[0009] According to the first aspect of the present invention, there is provided an electroplating device for TGV glass wafers, including an electroplating tank, a wafer fixture, and independent circulation control systems respectively arranged on both sides of the wafer fixture; the wafer fixture is arranged in the electroplating tank, and the wafer fixture includes a wafer clamping position; each independent circulation control system includes a flow disturbance mechanism, a flow homogenization mechanism, a moving device, and an electroplating solution circulation mechanism; the electroplating solution circulation mechanism is connected to the flow disturbance mechanism for inputting electroplating solution into the flow disturbance mechanism; the flow disturbance mechanism is arranged opposite to the wafer clamping position for outputting electroplating solution towards the wafer clamping position; the flow homogenization mechanism is arranged between the wafer clamping position and the flow disturbance mechanism; the moving device is connected to the flow homogenization mechanism to be able to control the movement of the flow homogenization mechanism relative to the wafer clamping position in the vertical and / or horizontal directions; the electroplating solution circulation mechanism includes an adjustable frequency conversion pump, and the adjustable frequency conversion pump controls the electroplating solution to be pumped into the flow disturbance mechanism in a pulsating manner, and the electroplating solution is sequentially sprayed through the flow disturbance mechanism and buffered by the flow homogenization mechanism and then flows towards the wafer clamping position.

[0010] In this technical solution, through the above structural design, by using a pulsating and frequency-adjustable bilateral liquid inlet circulation independent control system, the problem of uneven electroplating thickness on the inner walls of TGVs of glass wafers near and far from the liquid inlet is improved. The electroplating solution generates an electroplating solution jet injection effect through the flow disturbance mechanism, and then, in cooperation with the moving device driving the flow homogenization mechanism, the best control and combination of the concentration and diffusion rate of metal ions are achieved for the electroplating thickness and rate uniformity of the glass wafer TGV, constituting a multi-factor control to improve the uniformity of the electroplating layer on the inner surface of the through holes of micron-level glass wafers.

[0011] Preferably, the flow disturbance mechanism includes a flow disturbance plate and a plating solution chamber; the flow disturbance plate is arranged on the side of the plating solution chamber close to the wafer clamping position, and a plurality of small holes are formed on the flow disturbance plate.

[0012] In this technical solution, through the above structural design, the flow disturbance plate with small holes enables the electroplating solution in the plating solution chamber to be accelerated and sprayed towards the surface of the glass wafer located at the wafer clamping position, which helps the fluid movement in the TGV of the glass wafer, thereby improving the uniformity of the electroplating layer on the inner surface of the through holes of micron-level glass wafers.

[0013] Preferably, the flow equalizing mechanism includes a flow equalizing plate and a support plate. The support plate is used to fix and position the flow equalizing plate between the spoiler and the wafer clamping position. The moving device is connected to the support plate, and the moving device drives the flow equalizing plate to move through the support plate.

[0014] In this technical solution, through the above structural design, the moving device can displace the support plate in the vertical and / or horizontal directions, thereby driving the flow equalizing plate to make continuous reciprocating movements in the vertical and / or horizontal directions relative to the glass wafer clamped at the wafer clamping position. Furthermore, it can better control the diffusion of metal ions in the electroplating solution near the TGV of the glass wafer, so that the electroplating solution in the through holes of the glass wafer is fully exchanged and the coating thickness is uniform. At the same time, it also plays a role in preventing the electroplating solution from flowing too fast and breaking the glass wafer.

[0015] Preferably, the moving device can adjust the moving frequency and amplitude of the flow equalizing mechanism in real time.

[0016] In this technical solution, through the above structural design, the rates and time intervals of the up-and-down, left-and-right movements of the flow equalizing mechanism can be controlled, thereby better controlling the diffusion and concentration distribution of metal ions in the electroplating solution near the TGV of the glass wafer, and adjusting or optimizing the final stage of the electrochemical reaction process to ensure a more uniform metal deposition layer.

[0017] Preferably, the adjustable variable-frequency pump can control the flow rate of the pumped electroplating solution.

[0018] In this technical solution, through the above structural design, the user can adjust the flow rate of the electroplating solution in real time according to actual needs through the independent circulation control system on both sides of the glass wafer, and the flow rates on both sides can be different. Thereby, not only the process efficiency is improved, but also the electroplating quality is greatly improved.

[0019] Preferably, the independent circulation control system is also provided with a temperature control system, and the temperature control system is used to control the temperature of the electroplating solution.

[0020] In this technical solution, through the above structural design, independent temperature control of the electroplating solution pumped into each side is formed, and then the basic conditions of the electroplating chemical reaction are adjusted to improve the electroplating quality.

[0021] Preferably, the electroplating tank and the spoiler mechanism are connected through a pumping pipeline. The temperature control system includes an electric blanket, a control circuit, and a temperature sensing element. The electric blanket wraps the pumping pipeline, the temperature sensing element is arranged in the spoiler mechanism to detect the temperature of the electroplating solution, and the control circuit is connected to the electric blanket and the temperature sensing element.

[0022] In this technical solution, through the above structural design, through the cooperation of the electric blanket, the control circuit and the temperature sensing element, the real-time monitoring and independent control of the temperature of the electroplating solution pumped into each side are formed, and then the basic conditions of the electroplating chemical reaction are adjusted to improve the electroplating quality.

[0023] Preferably, in the electroplating device for TGV glass wafers, the wafer fixture includes a plurality of wafer clamping positions arranged along its length direction; an independent circulation control system is provided on each side of each wafer clamping position; the flow equalizing mechanisms included in the multiple independent circulation control systems on the same side share a support plate and a moving device connected to the support plate; the support plate includes a plurality of flow equalizing plate mounting positions arranged along its length direction, and the flow equalizing plate mounting positions are arranged in one-to-one correspondence with the wafer clamping positions.

[0024] In this technical solution, by introducing a plurality of wafer clamping positions and corresponding other structures, the demand for electroplating multiple glass wafers simultaneously is met. Each plating solution chamber is configured with an independent circulation control system, enabling each electroplating unit to independently control the pumping frequency, temperature and other process parameters, thereby providing higher production efficiency and process flexibility, while ensuring the electroplating uniformity of each glass wafer, optimizing the overall production process, and improving the electroplating efficiency and product quality.

[0025] According to the second aspect of the present invention, there is provided an electroplating apparatus for TGV glass wafers, including the electroplating device for TGV glass wafers described in any one of the above.

[0026] According to the third aspect of the present invention, there is provided an electroplating method for TGV glass wafers, using the electroplating device for TGV glass wafers described in any one of the above, including the following steps:

[0027] Fix the glass wafer on the wafer clamping position by using the wafer fixture and keep it stationary;

[0028] Start the adjustable frequency pump, so that the electroplating solution passes through the plating solution chamber from the liquid storage tank and then sprays out from the small holes on the spoiler; at the same time, start the moving device connected to the flow equalizing plate, and the moving device drives the flow equalizing plate to move towards the glass wafer until it reaches a preset distance from the glass wafer, and then the moving device drives the flow equalizing plate to make continuous reciprocating movements in the vertical and / or horizontal directions relative to the glass wafer, and the electroplating solution sprayed out from the spoiler passes through the flow equalizing plate for buffering and then seeps through the through holes of the glass wafer;

[0029] Adjust the adjustable frequency pumps included in the independent circulation control systems on both sides of the wafer fixture, adjust to low frequency on one side and high frequency on the other side, and after a preset time, switch to high frequency on one side and low frequency on the other side, and cycle this process a preset number of times.

[0030] Preferably, the mobile device drives the flow equalizing plate to move towards the glass wafer to a preset distance from the glass wafer of 2 mm - 10 mm; in the step of adjusting the adjustable frequency pump included in the independent circulation control system on both sides of the wafer fixture, the adjustable frequency pump can control the flow rate of the electroplating solution pumped in to be 10 L / min to 30 L / min.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] 1. Through the pulsating and frequency-adjustable bilateral independent circulation control of the electroplating solution pumped in, the present invention realizes the control of the pumping rate of the electroplating solution on both sides during the through-hole electroplating of the glass wafer and the stable circulation of the electroplating solution, effectively improving the diffusion of metal ions and the concentration distribution, and finally realizing the optimized control of the electroplating thickness and quality of the glass wafer TGV.

[0033] 2. The present invention can further assist in adjusting the electroplating solution pumped into the left and right chambers by controlling the flow rate and temperature of the electroplating solution pumped in, further improving the accuracy of the electrochemical reaction. The controllability of these parameters helps to optimize the basic conditions of the electroplating process, improve the problem of through-hole blockage caused by too fast film formation rate in the prior art, and improve the quality of the electroplated layer on the inner surface of the through-holes of the micron-level glass wafer.

[0034] 3. Through the electroplating solution jet effect generated by the flow disturbance mechanism, the present invention plays a positive role in the fluid movement inside the glass wafer TGV with different aspect ratios, effectively solving the problem of uneven fluid flow in traditional electroplating and ensuring that the electroplated layer is uniform and consistent on the inner surface of the through-hole.

[0035] 4. The present invention can further improve the diffusion of metal ions and the concentration distribution by changing the rate and time interval of the up, down, left, and right movement of the flow equalizing plate, constituting the final adjustment of the electrochemical reaction. This not only optimizes the uniformity of metal electroplating deposition, but also effectively avoids the problems of electroplating blockage or voids, and improves the electroplating quality inside the glass wafer TGV. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] By reading the detailed description of the non-limiting embodiments with reference to the following drawings, other features, objectives, and advantages of the present invention will become more apparent:

[0037] Figure 1 It is a schematic structural diagram of the electroplating device for TGV glass wafers according to the first embodiment of the present invention;

[0038] Figure 2 It is a schematic structural diagram of the electroplating device for TGV glass wafers according to the first embodiment of the present invention;

[0039] Figure 3 (a) is a top view of the glass wafer in the first embodiment of the present invention;

[0040] Figure 3 (b) Cross-sectional view of the glass wafer in the first embodiment of the present invention;

[0041] Figure 4 (a) Top view of the flow equalizing plate in the first embodiment of the present invention;

[0042] Figure 4 (b) Side view of the flow equalizing plate in the first embodiment of the present invention;

[0043] Figure 5 Schematic structural diagram of the flow disturbing mechanism in the first embodiment of the present invention;

[0044] Figure 6 Schematic diagram of different opening hole schemes of the flow disturbing plate in the first embodiment of the present invention;

[0045] Figure 7 Schematic diagram of the film forming process on the inner wall of the through hole in the first embodiment of the present invention;

[0046] Figure 8 Schematic structural diagram of the electroplating device for the TGV glass wafer according to the second embodiment of the present invention;

[0047] Figure 9 Flow chart of the electroplating method for the TGV glass wafer according to the fourth embodiment of the present invention.

[0048] As shown in the figure:

[0049] 10 - Electroplating tank;

[0050] 20 - Wafer fixture;

[0051] 201 - Wafer clamping position;

[0052] 202 - Glass wafer;

[0053] 3 - Independent circulation control system;

[0054] 30 - Flow disturbing mechanism;

[0055] 301 - Flow disturbing plate;

[0056] 302 - Plating solution chamber;

[0057] 40 - Flow equalizing mechanism;

[0058] 401 - Flow equalizing plate;

[0059] 402 - Support plate;

[0060] 50 - Moving device;

[0061] 60 - Electroplating solution circulation mechanism;

[0062] 601 - Liquid storage tank;

[0063] 602 - Adjustable frequency conversion pump;

[0064] 70 - Temperature control system;

[0065] 80 - Overflow transfer tank;

[0066] 2011 - First wafer clamping position;

[0067] 2012 - Second wafer clamping position;

[0068] 31 - First independent circulation control system on the left side;

[0069] 32 - Second independent circulation control system on the left side;

[0070] 33 - First independent circulation control system on the right side;

[0071] 34 - Second independent circulation control system on the right side;

[0072] 3011 - First spoiler on the left side;

[0073] 3021 - First plating solution chamber on the left side;

[0074] 4011 - Installation position of the first flow - equalizing plate on the left side;

[0075] 4012 - Installation position of the second flow - equalizing plate on the left side;

[0076] 4013 - Installation position of the first flow - equalizing plate on the right side;

[0077] 4014 - Installation position of the second flow - equalizing plate on the right side;

[0078] 4021 - Left support plate;

[0079] 4022 - Right support plate;

[0080] 501 - Left moving device;

[0081] 502 - Right moving device;

[0082] 6011 - First liquid storage tank on the left side;

[0083] 6021 - First adjustable frequency conversion pump on the left side;

[0084] 801 - First overflow transfer tank on the left side Detailed implementation manners

[0085] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the following will clearly and completely describe the technical solutions in the embodiments of this application with reference to the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are some, but not all, of the embodiments of this application. Components of the embodiments of this application usually described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0086] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts belong to the scope of protection of this application.

[0087] It should be noted that similar reference numerals and letters indicate similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. In addition, all directional indications (such as up, down, left, right, front, back, bottom, etc.) in this application are only used to explain the relative positional relationship and movement conditions between components in a specific posture (as shown in the accompanying drawings). If this specific posture changes, the directional indications will also change accordingly. Further, the descriptions involving "first", "second", etc. in the application are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly specifying the quantity of the indicated technical features.

[0088] Embodiment 1

[0089] This embodiment provides an electroplating device for TGV glass wafers, which is particularly suitable for glass wafers with a thickness range of 300 um to 700 um and a TGV aspect ratio range between 1:10 and 1:4. The structure of the glass wafer is as follows Figure 3 shown, and it has glass through holes (Through Glass Via, abbreviated as TGV).

[0090] As Figure 1 shown, the electroplating device for TGV glass wafers provided in this embodiment includes: an electroplating tank 10, a wafer fixture 20, and an independent circulation control system 3 respectively arranged on both sides of the wafer fixture 20.

[0091] Among them, the electroplating tank 10 is used to hold the electroplating solution to provide the environment required for electroplating the glass wafer 202; the wafer fixture 20 is arranged in the electroplating tank 10. The wafer fixture 20 includes a wafer clamping position 201. During electroplating, the wafer fixture 20 fixes the glass wafer 202 at the wafer clamping position 201.

[0092] The independent circulation control systems 3 on both sides each include a flow disturbing mechanism 30, a flow equalizing mechanism 40, a moving device 50, and a plating solution circulation mechanism 60; the plating solution circulation mechanism 60 is connected to the flow disturbing mechanism 30 for inputting plating solution into the flow disturbing mechanism 30; the flow disturbing mechanism 30 is arranged opposite to the wafer clamping position 201 for outputting plating solution towards the wafer clamping position 201 (i.e., the direction of the glass wafer); a flow equalizing mechanism 40 is arranged between the wafer clamping position 201 and the flow disturbing mechanism 30 for promoting the diffusion of metal ions in the plating solution and buffering the plating solution flowing out of the flow disturbing mechanism 30; the flow equalizing mechanism 40 is connected to the moving device 50 to be able to adjust the relative position between the flow equalizing mechanism 40 and the wafer clamping position 201; the plating solution circulation mechanism 60 includes a liquid storage tank 601 and an adjustable frequency pump 602, and the adjustable frequency pump 602 controls the plating solution to be pumped into the flow disturbing mechanism 30 in a pulsating manner, and the plating solution is sequentially sprayed by the flow disturbing mechanism 30 and buffered by the flow equalizing mechanism 40 and then flows towards the glass wafer 202 on the wafer clamping position 201.

[0093] Further combined with Figure 2 and Figure 5 As shown, the flow disturbing mechanism 30 includes a flow disturbing plate 301 and a plating solution chamber 302. An anode assembly is placed in the plating solution chamber 302. The flow disturbing plate 301 is arranged on the side of the plating solution chamber 302 close to the wafer clamping position 201, and a plurality of small holes are formed therein for accelerating the spraying of the plating solution towards the surface of the glass wafer 202 located at the wafer clamping position 201, thereby contributing to the fluid movement in the TGV of the glass wafer. There can be various opening schemes for the flow disturbing plate 301. For example, Figure 6 As shown, it can have different small hole diameters, or opening areas, equal or unequal openings (such as the progressive indentation method) of the through small holes. Different jet spraying effects of the plating solution are generated through the opening size and distribution of the flow disturbing plate 301 corresponding to different aspect ratios and densities of the TGV of the glass wafer, thereby improving the uniformity of the plating layer on the inner surface of the through holes of the micron-level glass wafer.

[0094] The flow equalizing mechanism 40 includes a flow equalizing plate 401 and a support plate 402. The support plate 402 is used to fix and position the flow equalizing plate 401 between the flow disturbing plate 301 and the wafer clamping position 201. The structure of the flow equalizing plate 401 is as Figure 4 shown. It is used to buffer the plating solution sprayed out from the flow disturbing plate 301. The moving device 50 is connected to the support plate 402 to be able to displace the support plate 402 in the vertical and / or horizontal directions, thereby driving the flow equalizing plate 401 to make continuous reciprocating movements in the vertical and / or horizontal directions relative to the glass wafer 202 clamped at the wafer clamping position 201, and further better controlling the diffusion of metal ions in the plating solution near the TGV of the glass wafer, so that the plating solution in the through holes of the glass wafer is fully exchanged and the coating thickness is uniform, and at the same time, it also plays a role in preventing the plating solution from flowing too fast and breaking the glass wafer.

[0095] The electroplating solution circulation mechanism 60 includes a liquid storage tank 601 and an adjustable frequency conversion pump 602; wherein, the electroplating solution required for electroplating is stored in the liquid storage tank 601, and the liquid storage tank 601 is connected to the plating solution chamber 302 of the flow disturbance mechanism 30 through a liquid inlet device; the adjustable frequency conversion pump 602 is connected to the liquid storage tank 601 and is used to control the pumping frequency of the electroplating solution transported from the liquid storage tank 601 to the flow disturbance mechanism 30; the higher the frequency of the adjustable frequency conversion pump 602, the higher the efficiency of the electroplating solution spraying out from the flow disturbance mechanism 30, the more sufficient the exchange of metal ions in the electroplating solution, and the faster the film formation on the inner wall of the through hole on this side of the glass wafer.

[0096] When the electroplating device for TGV glass wafers provided in this embodiment works, the wafer fixture 20 fixes the glass wafer 202 at the wafer clamping position 201 and keeps it stationary. After the adjustable frequency conversion pumps 602 on both sides are started, the electroplating solution passes through the plating solution chamber 302 from the liquid storage tank 601 and is then sprayed out at high speed through the small holes on the flow disturbance plate 301; at the same time, the moving device 50 connected to the flow equalizing mechanism 40 is started, and the moving device 50 drives the flow equalizing plate 401 to move towards the glass wafer 202 to a distance of 2 mm - 10 mm from the glass wafer 202. Then, during the electroplating process, the moving device 50 drives the flow equalizing plate 401 to make continuous reciprocating movements back and forth, and the frequency and amplitude of the reciprocating movements can be changed in real time; the electroplating solution sprayed out from the flow disturbance plate 301 finally passes through the buffer of the flow equalizing plate 401 and then penetrates through the through holes of the glass wafer 202.

[0097] During the above process, the movement of the flow equalizing plate 401 enables the full exchange of the liquid in the through holes of the glass wafer 202, thereby greatly improving the electroplating uniformity and making the hole filling without voids or defects; and because the movement frequency and amplitude of the moving device 50 can be changed in real time, it is possible to control the rate and time interval changes of the up, down, left, and right movement of the flow equalizing plate 401, thereby better controlling the diffusion and concentration distribution of metal ions in the electroplating solution near the TGV of the glass wafer and adjusting or optimizing the final stage of the electrochemical reaction process to ensure a more uniform metal deposition layer.

[0098] Furthermore, regarding the independent circulation control system 3 provided on both sides of the wafer fixture 20, as Figure 7 shown, when the frequency of the adjustable frequency conversion pump included in the left independent circulation control system is higher than that of the right side, the efficiency of the electroplating solution spraying from the left flow disturbance mechanism is higher, and the film formation speed on the left side of the inner wall of the through hole of the glass wafer will significantly exceed that of the right side. Thus, after maintaining a high frequency on the left and a low frequency on the right for a period of time, it can be adjusted to a low frequency on the left and a high frequency on the right. By repeating this process multiple times until the metal coating on the inner wall of the through hole is uniform.

[0099] Preferably, the adjustable variable-frequency pump 602 can also control the flow rate of the electroplating solution pumped in. In this embodiment, the pumping flow rate can be 10 L / min to 30 L / min. When implementing the electroplating process, the independent circulation control system 3 on both sides of the glass wafer can adjust the flow rate of the electroplating solution in real time, and the flow rates on both sides can be different, achieving an excellent electroplating effect.

[0100] In addition, as Figure 1 and Figure 2 shown, each independent circulation control system 3 is also provided with a temperature control system 70 for adjusting the temperature of the electroplating solution pumped into each side. The temperature control system 70 includes an electric blanket, a control circuit, and a temperature sensing element. The electric blanket wraps the pumping pipeline of the liquid inlet device, and the temperature sensing element is arranged in the plating solution chamber 302 for detecting the temperature of the electroplating solution. The control circuit is connected to the electric blanket and the temperature sensing element. By adopting the above structural design, independent temperature control of the electroplating solution pumped into each side is formed, thereby adjusting the basic conditions of the electroplating chemical reaction and improving the electroplating quality.

[0101] Furthermore, the electroplating device provided in this embodiment further includes an overflow transfer tank 80. The overflow transfer tank 80 is communicated with the electroplating tank 10 and the liquid storage tank 601. The electroplating solution in the electroplating tank 10 continuously overflows into the overflow transfer tank 80 and is re-introduced into the liquid storage tank 601 through the overflow transfer tank 80, realizing the cyclic exchange of the electroplating solution.

[0102] Embodiment 2

[0103] This embodiment provides an electroplating device for a TGV glass wafer. The structure of this device is substantially the same as that of the electroplating device provided in Embodiment 1. The main difference is that in Embodiment 1, the wafer fixture arranged in the electroplating tank only includes one wafer clamping position, and an independent circulation control system is arranged on each side of this wafer clamping position. In this embodiment, the wafer fixture includes a plurality of wafer clamping positions arranged along its length direction, and an independent circulation control system is arranged on each side of each wafer clamping position. The flow equalizing mechanisms included in the multiple independent circulation control systems on the same side share a support plate and a moving device connected to the support plate. The support plate includes a plurality of flow equalizing plate mounting positions arranged along its length direction, and the flow equalizing plate mounting positions are arranged in one-to-one correspondence with the wafer clamping positions.

[0104] As Figure 8 shown, taking the wafer fixture 20 including 2 wafer clamping positions as an example, the 2 wafer clamping positions are respectively the first wafer clamping position 2011 and the second wafer clamping position 2012. The left side and the right side of the first wafer clamping position 2011 are respectively provided with a left first independent circulation control system 31 and a right first independent circulation control system 33. The left side and the right side of the second wafer clamping position 2012 are respectively provided with a left second independent circulation control system 32 and a right second independent circulation control system 34.

[0105] The flow equalizing mechanisms included in the first left independent circulation control system 31 and the second left independent circulation control system 32 share the left support plate 4021 and the left moving device 501 connected to the left support plate 4021. The left support plate 4021 is provided with a first left flow equalizing plate mounting position 4011 and a second left flow equalizing plate mounting position 4012 along its length direction. The flow equalizing mechanisms included in the first right independent circulation control system 33 and the second right independent circulation control system 34 share the right support plate 4022 and the right moving device 502 connected to the right support plate 4022. The right support plate 4022 is provided with a first right flow equalizing plate mounting position 4013 and a second right flow equalizing plate mounting position 4014 along its length direction. Except for this, the remaining structures of each independent circulation control system are the same as those in Embodiment 1.

[0106] In this embodiment, by introducing multiple wafer clamping positions and corresponding remaining structures, the requirement of electroplating multiple glass wafers simultaneously is met. Each plating solution chamber is configured with an independent circulation control system, enabling each electroplating unit to independently control the liquid pumping frequency, temperature, and other process parameters, thereby more flexibly adapting to different process conditions.

[0107] By adopting the above-mentioned structural design to achieve simultaneous electroplating of multiple glass wafers, higher production efficiency and process flexibility are provided. At the same time, the electroplating uniformity of each glass wafer is ensured, the overall production process is optimized, and the electroplating efficiency and product quality are improved.

[0108] Embodiment 3

[0109] This embodiment provides an electroplating device for TGV glass wafers, including the electroplating device for TGV glass wafers described in Embodiment 1 or 2.

[0110] Embodiment 4

[0111] As Figure 9 shown, this embodiment provides an electroplating method for TGV glass wafers, adopting the electroplating device for TGV glass wafers described in Embodiment 1 or Embodiment 2, including the following steps:

[0112] Fix the glass wafer at the wafer clamping position with a wafer clamp and keep it stationary;

[0113] Start the adjustable frequency pump, so that the electroplating solution passes through the plating solution chamber from the liquid storage tank and then jets out from the small holes on the flow disturbing plate; at the same time, start the moving device connected to the flow equalizing mechanism. After the moving device drives the flow equalizing plate to move towards the glass wafer to a distance between 2 mm and 10 mm from the glass wafer, the moving device drives the flow equalizing plate to make continuous back-and-forth reciprocating movements, and the electroplating solution jetted out from the flow disturbing plate passes through the glass wafer through holes after being buffered by the flow equalizing plate;

[0114] Adjust the bilateral adjustable variable-frequency pump. After maintaining the preset time of high frequency on the left side and low frequency on the right side, adjust it to low frequency on the left side and high frequency on the right side, and cycle this process for the preset number of times to make the metal coating on the inner wall of the through hole uniform.

[0115] Furthermore, the liquid flow rate of the electroplating solution of each flow disturbance mechanism can be adjusted in real time through the adjustable variable-frequency pump, and the flow rates on both sides can be different to achieve the electroplating effect. Exemplarily, the pumping flow rate is regulated to be 10 L / min to 30 L / min.

[0116] Furthermore, the temperature of the pumped electroplating solution can be adjusted through the temperature control system to form independent temperature control for the electroplating solution pumped on each side, thereby adjusting the basic conditions of the electroplating chemical reaction to improve the electroplating quality.

[0117] Furthermore, the frequency and amplitude of the reciprocating motion can be adjusted in real time through the moving device, and the speed and time interval change of the up-and-down, left-and-right movement of the flow equalizing plate can be controlled, so as to better control the diffusion and concentration distribution of metal ions in the electroplating solution near the TGV of the glass wafer, and perform the final stage of adjustment or optimization on the electrochemistry reaction process to ensure a more uniform metal deposition layer.

[0118] In the foregoing steps, the higher the frequency set by the adjustable variable-frequency pump, the higher the efficiency of the electroplating solution spraying out from the flow disturbance mechanism. The higher the efficiency of the electroplating solution spraying out from the flow disturbance mechanism, the more sufficient the exchange of metal ions in the electroplating solution, and the faster the film formation on the inner wall of the through hole on this side of the wafer. At the same time, by controlling the displacement of the support plate by the moving device in the vertical and / or horizontal directions in real time, the flow equalizing plate is driven to make continuous reciprocating motions in the vertical and / or horizontal directions relative to the glass wafer clamped at the clamping position, thereby better controlling the diffusion of metal ions in the electroplating solution near the TGV of the glass wafer, so that the electroplating solution in the through holes of the glass wafer is fully exchanged and the coating thickness is uniform, and at the same time, it also plays a role in preventing the electroplating solution flow from flushing and breaking the glass wafer too quickly.

[0119] Through the electroplating method provided by this embodiment, uniform electroplating of the TGV glass wafer is realized, and the uniformity and quality of the inner through hole electroplating layer are ensured.

[0120] The specific embodiments of the present invention have been described above. Through the above description, relevant staff can make various changes and modifications completely within the scope not deviating from the technical idea of this invention.

Claims

1. An electroplating device for TGV glass wafers, characterized in that: It includes an electroplating tank, a wafer fixture, and independent circulation control systems respectively arranged on both sides of the wafer fixture; The wafer clamp is arranged in the electroplating tank, and the wafer clamp comprises a wafer clamping position; The independent circulation control system includes a flow disturbance mechanism, a flow uniformity mechanism, a moving device and a plating solution circulation mechanism; The electroplating solution circulation mechanism is connected to the flow disturbance mechanism to input the electroplating solution into the flow disturbance mechanism; The flow disturbance mechanism is arranged relative to the wafer clamping position to output the electroplating liquid toward the wafer clamping position; The flow-uniform mechanism is arranged between the wafer clamping position and the flow-disturbing mechanism; The moving device is connected to the flow equalizing mechanism so as to be able to control the flow equalizing mechanism to move in a vertical and / or horizontal direction relative to the wafer clamping position; The plating liquid circulation mechanism includes an adjustable variable frequency pump, which controls the plating liquid to be pumped into the flow disturbance mechanism in a pulsating manner. The plating liquid is sequentially sprayed through the flow disturbance mechanism and buffered by the flow equalization mechanism before flowing to the wafer clamping position.

2. The electroplating device for TGV glass wafers according to claim 1, characterized in that: The spoiler mechanism comprises a spoiler plate and a plating liquid chamber; the spoiler plate is arranged on one side of the plating liquid chamber close to the wafer clamping position, and a plurality of small holes are opened on the spoiler plate.

3. The electroplating device for TGV glass wafers according to claim 1, characterized in that: The flow equalizing mechanism includes a flow equalizing plate and a support plate, wherein the support plate is used to fix and position the flow equalizing plate between the spoiler and the wafer clamping position, and the moving device is connected to the support plate, and the moving device drives the flow equalizing plate to move through the support plate.

4. The electroplating device for TGV glass wafers according to claim 3, characterized in that: The moving device can adjust the moving frequency and amplitude of the flow equalizing mechanism in real time.

5. The electroplating device for TGV glass wafers according to claim 1, characterized in that: The adjustable variable frequency pump can control the flow rate of the electroplating solution pumped into the electroplating solution.

6. The electroplating device for TGV glass wafers according to claim 1, characterized in that: The independent circulation control system is also provided with a temperature control system, and the temperature control system is used to control the temperature of the electroplating solution.

7. The electroplating device for TGV glass wafers according to claim 6, characterized in that: The electroplating tank and the spoiler mechanism are connected through a pumping pipeline. The temperature control system includes an electric blanket, a control circuit and a temperature sensing element. The electric blanket wraps the pumping pipeline. The temperature sensing element is arranged in the spoiler mechanism to detect the temperature of the electroplating solution. The control circuit is connected to the electric blanket and the temperature sensing element.

8. The electroplating device for TGV glass wafers according to claim 1, characterized in that: The wafer clamp includes multiple wafer clamping positions arranged along its length direction; an independent circulation control system is arranged on both sides of each wafer clamping position; the flow equalization mechanisms contained in the multiple independent circulation control systems located on the same side share a support plate and a moving device connected to the support plate; the support plate includes multiple flow equalization plate mounting positions arranged along its length direction, and the flow equalization plate mounting positions are arranged one-to-one correspondingly to the wafer clamping positions.

9. An electroplating device for TGV glass wafers, characterized in that: An electroplating device for TGV glass wafers comprising any one of claims 1 to 8.

10. A method for electroplating TGV glass wafers, characterized in that: The electroplating device for TGV glass wafers according to any one of claims 1 to 8 comprises the following steps: Using a wafer clamp to fix the glass wafer in a wafer clamping position and keep it stationary; Start the adjustable frequency conversion pump to make the plating solution pass from the liquid storage tank to the plating liquid chamber and then spray out from the small holes on the spoiler; At the same time, a moving device connected to the flow equalizer plate is started, and after the moving device drives the flow equalizer plate to move toward the glass wafer to a preset distance from the glass wafer, the moving device drives the flow equalizer plate to make continuous reciprocating motion in the vertical and / or horizontal directions relative to the glass wafer, and the plating liquid sprayed from the spoiler plate is buffered by the flow equalizer plate and then penetrates through the through hole of the glass wafer; The adjustable variable frequency pump contained in the independent circulation control system on both sides of the wafer clamp is adjusted to low frequency on one side and high frequency on the other side. After a preset time, it is changed to high frequency on one side and low frequency on the other side, and this process is repeated for a preset number of times.

11. The electroplating method for TGV glass wafer according to claim 10, characterized in that: The moving device drives the flow plate to move toward the glass wafer to a preset distance of 2mm-10mm from the glass wafer; in the adjustable variable frequency pump step included in the independent circulation control system for adjusting both sides of the wafer clamp, the adjustable variable frequency pump can control the flow rate of the electroplating solution to be pumped into the electroplating solution to 10L / min~30L / min.

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