High-precision delayed detonation control method and system

Abstract

The invention provides a high-precision delay detonation control method and system, and the method comprises the steps: starting a high-precision timing unit after a recognition result is a delay instruction, adjusting the delay time of the high-precision timing unit based on the idle release delay time, monitoring the temperature of a chip through a temperature sensor in a timing process, obtaining a digital temperature feature, and carrying out the control of the high-precision delay detonation. A static temperature drift correction coefficient is extracted based on the digital temperature features, a dynamic temperature drift correction coefficient is extracted based on the standard temperature sequence and the air discharge temperature sequence, and the timing frequency of the high-precision timing unit is dynamically adjusted according to the static temperature drift coefficient and the dynamic temperature drift coefficient; according to the invention, the temperature drift coefficient can be extracted according to the idle discharge temperature of the capacitor under the environmental interference, and the timing frequency is dynamically adjusted, so that the influence of the environmental interference on the delay detonation control precision is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of delayed detonation, and more specifically, to a high-precision delayed detonation control method and system. Background Art

[0002] Delayed detonation is a technology that uses precise control of time delay to achieve the detonation of explosives or fuses at a specific time point. This technology is widely used in military, civil blasting, aerospace and other fields to ensure that explosives are detonated at a predetermined time or under predetermined conditions, thereby improving safety and mission success rate.

[0003] In the prior art, different environmental factors have a great influence on the delayed detonation control. In particular, extreme environments such as thunderstorms may lead to insufficient ignition temperature during detonation, resulting in errors in the delayed detonation time. Premature detonation and late detonation will greatly threaten the personal safety of the operator and cause unnecessary losses of manpower and material resources. Therefore, how to reduce the impact of environmental interference on the accuracy of delayed detonation control has become an urgent problem to be solved. Summary of the invention

[0004] The present application provides a high-precision delayed detonation control method and system, which can extract the temperature drift coefficient according to the empty discharge temperature of the capacitor under environmental interference, and dynamically adjust the timing frequency, thereby reducing the impact of environmental interference on the delay detonation control accuracy.

[0005] In a first aspect, the present application provides a high-precision delayed detonation control method, which can be executed by a network device, or can also be executed by a chip configured in the network device, and the present application does not limit this.

[0006] Specifically, the method includes: After receiving an external control signal through the high-voltage interface, the high-voltage discharge circuit is started to control the first capacitor to discharge, and discharge data is collected during the discharge process to obtain a discharge delay time and a discharge temperature sequence; Decoding and identifying the external control signal, and when the decoding and identification result is a detonation instruction, controlling the discharge of the second capacitor through the high-voltage discharge circuit to realize a first delayed detonation mode; When the decoding recognition result is a delay instruction, the high-precision timing unit is started, and the delay time of the high-precision timing unit is adjusted based on the idle delay time; During the timing process, the chip temperature is monitored by a temperature sensor to obtain a digital temperature feature, and a static temperature drift correction coefficient is extracted based on the digital temperature feature; A standard temperature sequence is obtained, a dynamic temperature drift correction coefficient is extracted based on the standard temperature sequence and the empty temperature sequence, and the timing frequency of the high-precision timing unit is dynamically adjusted according to the static temperature drift coefficient and the dynamic temperature drift coefficient. When the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby realizing a second delayed detonation mode.

[0007] In combination with the first aspect, in some implementations of the first aspect, extracting a static temperature drift correction coefficient based on the digitized temperature feature specifically includes: Obtain chip temperature values ​​corresponding to different monitoring moments in the digital temperature feature; Perform time series fitting based on chip temperature values ​​corresponding to different monitoring moments to obtain a temperature monitoring curve; perform temperature feature extraction on the temperature monitoring curve to obtain a monitoring temperature feature; A temperature calibration base point is obtained, and correction coefficient mapping is performed according to the monitored temperature characteristics and the temperature calibration base point to obtain a static temperature drift correction coefficient.

[0008] In combination with the first aspect, in certain implementations of the first aspect, extracting the dynamic temperature drift correction coefficient based on the standard temperature sequence and the empty temperature sequence specifically includes: Extract the rising temperature based on the standard temperature sequence and the empty temperature sequence to obtain the standard temperature rising time and the empty temperature rising time; Determine the heat transfer rate coefficient according to the standard temperature rise time and the empty temperature rise time; Extracting correlation trends based on the standard temperature sequence and the empty discharge temperature sequence, and determining correlation detonation probability based on the correlation degree of the temperature trends; The heat transfer rate coefficient is linearly corrected based on the associated detonation probability to obtain a dynamic temperature drift correction coefficient.

[0009] In combination with the first aspect, in certain implementations of the first aspect, dynamically adjusting the timing frequency of the high-precision timing unit according to the static temperature drift coefficient and the dynamic temperature drift coefficient specifically includes: using the product of the static temperature drift coefficient and the dynamic temperature drift coefficient as a proportional control parameter of a forward path in a proportional-integral-differential controller, and dynamically adjusting the timing frequency of the high-precision timing unit using a proportional-integral-differential controller.

[0010] In combination with the first aspect, in certain implementations of the first aspect, after monitoring the chip temperature through the temperature sensor, the method further includes: acquiring a voltage signal of the temperature sensor and converting it into a digital temperature feature through a high-precision analog-to-digital converter.

[0011] In combination with the first aspect, in certain implementations of the first aspect, the received signal is decoded and the instruction type is identified by a built-in digital control unit, and the decoding process includes baud rate adaptation, instruction verification, and instruction type identification.

[0012] In combination with the first aspect, in certain implementations of the first aspect, the high-voltage discharge circuit is composed of a power MOS tube, a current limiting circuit, and a negative feedback control loop.

[0013] In a second aspect, the present application provides a high-precision delayed detonation control system, which includes a detonation control unit, and the detonation control unit includes: The detonation data acquisition module is used to start the high-voltage discharge circuit to control the empty discharge of the first capacitor after receiving an external control signal through the high-voltage interface, and to collect empty discharge data during the empty discharge process to obtain an empty discharge delay time and an empty discharge temperature sequence; A first delayed detonation module, used for decoding and identifying the external control signal, and when the decoding and identification result is a detonation instruction, controlling the discharge of the second capacitor through the high-voltage discharge circuit to realize a first delayed detonation mode; A second delayed detonation module is used to start the high-precision timing unit when the decoding recognition result is a delay instruction, and adjust the delay time of the high-precision timing unit based on the empty release delay time; The second delayed detonation module is used to monitor the chip temperature through the temperature sensor during the timing process to obtain a digital temperature feature, and extract a static temperature drift correction coefficient based on the digital temperature feature; The second delayed detonation module is used to obtain a standard temperature sequence, extract a dynamic temperature drift correction coefficient based on the standard temperature sequence and the empty temperature sequence, and dynamically adjust the timing frequency of the high-precision timing unit according to the static temperature drift coefficient and the dynamic temperature drift coefficient. When the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby realizing a second delayed detonation mode.

[0014] In a third aspect, the present application provides a computer terminal device, comprising a memory and a processor, wherein the memory stores codes, and the processor is configured to obtain the codes and execute the above-mentioned high-precision delayed detonation control method.

[0015] In a fourth aspect, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores at least one computer program, and the computer program is loaded and executed by a processor to implement the operations performed by the above-mentioned high-precision delayed detonation control method.

[0016] The technical solution provided by the embodiments disclosed in this application has the following beneficial effects: The present application provides a high-precision delayed detonation control method and system. First, after receiving an external control signal through a high-voltage interface, a high-voltage discharge circuit is started to control the empty discharge of a first capacitor, and empty discharge data is collected during the empty discharge process to obtain an empty discharge delay time and an empty discharge temperature sequence, and the external control signal is decoded and identified. When the decoding and identification result is a detonation instruction, the second capacitor is controlled to discharge through the high-voltage discharge circuit to achieve a first delayed detonation mode. When the decoding and identification result is a delay instruction, a high-precision timing unit is started, and the delay time of the high-precision timing unit is adjusted based on the empty discharge delay time. During the timing process, the chip temperature is monitored by a temperature sensor to obtain a digital temperature feature, and a static temperature drift correction coefficient is extracted based on the digital temperature feature. A standard temperature sequence is obtained, and a dynamic temperature drift correction coefficient is extracted based on the standard temperature sequence and the empty discharge temperature sequence. The timing frequency of the high-precision timing unit is dynamically adjusted according to the static temperature drift coefficient and the dynamic temperature drift coefficient. When the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby achieving a second delayed detonation mode.

[0017] It can be seen that the present application can collect temperature data under environmental interference through the empty discharge process of the first capacitor to form an empty discharge temperature sequence. The empty discharge temperature sequence reflects the temperature changes in the actual working environment, including the influence of factors such as ambient temperature and heat transfer efficiency, thereby providing reliable data support for the subsequent temperature drift coefficient extraction and timing frequency adjustment, and extracting the static temperature drift correction coefficient based on the digital temperature characteristics. The static temperature drift correction coefficient reflects the output deviation of the temperature sensor at different temperatures and is used to compensate for the frequency drift caused by temperature. The temperature trend is compared by comparing the standard temperature sequence and the empty discharge temperature sequence, so as to determine the dynamic temperature drift correction coefficient under environmental interference according to the heat transfer efficiency and the associated detonation probability. The dynamic temperature drift correction coefficient is used to compensate for the detonation time error caused by different temperature transfer rates under environmental interference. According to the static temperature drift correction coefficient and the dynamic temperature drift correction coefficient as proportional control parameters, the timing frequency of the high-precision timing unit is dynamically adjusted by a controller, thereby reducing the influence of environmental interference on the control accuracy of delayed detonation and improving the time accuracy during delayed detonation.

[0018] In summary, the present application can extract the temperature drift coefficient according to the empty discharge temperature of the capacitor under environmental interference, and dynamically adjust the timing frequency, thereby reducing the influence of environmental interference on the control accuracy of delayed detonation. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is an exemplary flow chart of a high-precision delayed detonation control method according to some embodiments of the present application; Figure 2 is an exemplary flow chart for determining a static temperature drift correction coefficient in some embodiments of the present application; Figure 3 is a schematic diagram of the structure of a detonation control unit according to some embodiments of the present application; Figure 4 It is a structural schematic diagram of a computer terminal device for implementing a high-precision delayed detonation control method according to some embodiments of the present application. DETAILED DESCRIPTION

[0020] After receiving an external control signal through a high-voltage interface, the present application starts a high-voltage discharge circuit to control the empty discharge of the first capacitor, and collects empty discharge data during the empty discharge process to obtain an empty discharge delay time and an empty discharge temperature sequence, decodes and identifies the external control signal, and controls the discharge of the second capacitor through a high-voltage discharge circuit when the decoding and identification result is a detonation instruction, thereby realizing a first delayed detonation mode; when the decoding and identification result is a delay instruction, starts a high-precision timing unit, adjusts the delay time of the high-precision timing unit based on the empty discharge delay time, monitors the chip temperature through a temperature sensor during the timing process, obtains a digital temperature feature, extracts a static temperature drift correction coefficient based on the digital temperature feature, obtains a standard temperature sequence, extracts a dynamic temperature drift correction coefficient based on the standard temperature sequence and the empty discharge temperature sequence, and dynamically adjusts the timing frequency of the high-precision timing unit according to the static temperature drift coefficient and the dynamic temperature drift coefficient; when the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby realizing a second delayed detonation mode; the temperature drift coefficient can be extracted according to the empty discharge temperature of the capacitor under environmental interference, and the timing frequency is dynamically adjusted, thereby reducing the influence of environmental interference on the control accuracy of delayed detonation.

[0021] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods. Figure 1 , which is an exemplary flow chart of a high-precision delayed detonation control method according to some embodiments of the present application. The high-precision delayed detonation control method 100 mainly includes the following steps: In step S101, after receiving an external control signal through the high-voltage interface, the high-voltage discharge circuit is started to control the first capacitor to discharge, and discharge data is collected during the discharge process to obtain a discharge delay time and a discharge temperature sequence.

[0022] It should be noted that the high-voltage interface described in the present application adopts a single-ended or differential communication mode, supports adaptive baud rate communication (the baud rate communication can be set to 38.4Kbps-500Kbps in specific implementation), and can receive external control signals. The external control signals are transmitted through the high-voltage bus. The signals include detonation instructions, delay instructions, etc. In some embodiments, the present application adopts adaptive baud rate communication and maximum Hamming distance command code technology for signal reception to ensure high-reliability communication in complex electromagnetic environments.

[0023] In some embodiments, the high-voltage discharge circuit described in the present application is composed of a power MOS tube, a current limiting circuit and a negative feedback control loop. The power MOS tube is used to control the charging and discharging of the capacitor. The current limiting circuit ensures the stability of the discharge current through a negative feedback mechanism. In the present application, the first capacitor is controlled to be discharged through the high-voltage discharge circuit. The first capacitor is not used for actual ignition, but only for simulating the ignition environment. The discharge process of the first capacitor is started by controlling the gate voltage of the power MOS tube. During the discharge process, the discharge current and voltage of the capacitor are monitored in real time, wherein the voltage rise time of the first capacitor is used as the discharge delay time. In specific implementation, an RC oscillator can be used to record the time from the start of discharge to the complete discharge of the first capacitor to obtain the discharge delay time.

[0024] Optionally, in some embodiments, a temperature sensor is used to collect the discharge temperature of the first capacitor at equal intervals to obtain the no-discharge temperature sequence. In specific implementation, the no-discharge delay time and the no-discharge temperature sequence can be stored in a large-capacity non-volatile memory for subsequent temperature drift coefficient calculation and timing frequency adjustment, and the collected data is analyzed by a digital control unit to extract the static temperature drift coefficient and the dynamic temperature drift coefficient, wherein the static temperature drift coefficient is calculated based on the digitized temperature characteristics of the temperature sensor, and the dynamic temperature drift coefficient is calculated based on the changing trend of the no-discharge temperature sequence.

[0025] In step S102, the external control signal is decoded and identified, and when the decoding and identification result is a detonation instruction, the second capacitor is controlled to discharge through the high-voltage discharge circuit to implement a first delayed detonation mode.

[0026] Optionally, in some embodiments, the received signal is decoded and the instruction type is identified by a built-in digital control unit. The decoding process includes baud rate adaptation, instruction verification and instruction type identification. After decoding, the digital control unit determines the instruction type. If it is identified as a detonation instruction, it enters the first delayed detonation mode; if it is identified as a delayed instruction, it enters the second delayed detonation mode. In specific implementation, a single-chip microcomputer or a state machine can be used as the digital control unit, or other devices or equipment that can realize signal decoding can be used. This application does not limit this.

[0027] It should be noted that after confirming that the decoding result is a detonation instruction, the digital control unit generates a corresponding control signal to start the high-voltage discharge circuit, wherein the high-voltage discharge circuit is composed of a power MOS tube, a current limiting circuit and a negative feedback control loop; the digital control unit starts the discharge process of the second capacitor by controlling the gate voltage of the power MOS tube; before the execution of the detonation instruction, the second capacitor has been charged to a preset voltage through the high-voltage interface; the charging process is controlled by the current limiting circuit to ensure that the charging current is within a safe range; after the execution of the detonation instruction, the digital control unit controls the power MOS tube to turn on through the high-voltage discharge circuit, and the second capacitor starts to discharge; the discharge current generates high temperature through the ignition wire for detonation, thereby realizing the first delayed detonation mode.

[0028] Optionally, in some embodiments, during the discharge process, the current limiting circuit monitors the discharge current in real time through a negative feedback mechanism to ensure that the current is within a preset range, thereby avoiding overcurrent damage to the circuit and improving the safety of the detonation process.

[0029] In step S103, when the decoding and recognition result is a delay instruction, the high-precision timing unit is started, and the delay time of the high-precision timing unit is adjusted based on the idle delay time.

[0030] Optionally, in some embodiments, the high-precision timing unit of the present application is composed of a low-temperature drift RC oscillator, a counter and a non-volatile memory (NVM), wherein the RC oscillator provides a reference clock, the counter records time, and the NVM stores adjustment parameters. In specific implementation, the digital control unit generates a control signal to start the high-precision timing unit, the RC oscillator starts working after receiving the control signal, and the counter starts timing from zero.

[0031] Optionally, in some embodiments, the power supply voltage of the high-precision timing unit and the temperature sensor described in the present application is preset to 3.3V, and a two-stage low-voltage difference linear regulator is used to convert the high-precision signal input into a low-voltage signal to power the high-precision timing unit and the temperature sensor, thereby ensuring that the high-precision timing unit and the temperature sensor operate in a low-noise environment. In specific implementation, an RC oscillator can be used as the high-precision timing unit. In some other embodiments, other devices or equipment that can achieve high-precision timing can also be used, and the present application does not limit this.

[0032] It should be noted that the no-discharge delay time is obtained through data collected during the no-discharge process of the first capacitor and stored in a large-capacity NVM. The no-discharge delay time reflects the impact of environmental interference on timing accuracy. In specific implementation, the digital control unit reads the no-discharge delay time from the NVM, and combines the current temperature, voltage and other parameters to dynamically adjust the delay time of the high-precision timing unit through a high-density adjustment algorithm. Adjusting the delay time of the high-precision timing unit based on the no-discharge delay time specifically includes: taking the no-discharge delay time as a benchmark, performing differential correction on the initial delay time of the high-precision timing unit, and obtaining the corrected delay time.

[0033] In step S104, the chip temperature is monitored by a temperature sensor during the timing process to obtain a digitized temperature feature, and a static temperature drift correction coefficient is extracted based on the digitized temperature feature.

[0034] It should be noted that monitoring the chip temperature and considering its impact on the detonation time are the key to ensuring high-precision delayed detonation control. Among them, the oscillator inside the chip is the core component of the timing unit, and its frequency will drift with temperature changes. Temperature increases or decreases will cause the oscillator frequency to deviate from the nominal value, thereby affecting the accuracy of timing, and the parameters of components such as resistors, capacitors, and transistors inside the chip will also change with temperature, thereby affecting the performance of the circuit. In addition, temperature changes may also cause the output voltage of the low-dropout linear regulator to fluctuate, thereby affecting the stability of the timing unit and the high-voltage discharge circuit. Therefore, it is necessary to monitor the chip temperature in real time to dynamically adjust the oscillation frequency of the timing unit, compensate for the frequency drift caused by temperature, and ensure the accuracy of delayed detonation.

[0035] Optionally, in some embodiments, after monitoring the chip temperature through the temperature sensor, the method further includes: acquiring a voltage signal of the temperature sensor and converting it into a digital temperature characteristic through a high-precision analog-to-digital converter.

[0036] Optionally, in some embodiments, reference Figure 2 As shown, this figure is an exemplary flow chart of determining the static temperature drift correction coefficient in some embodiments of the present application. Extracting the static temperature drift correction coefficient based on the digitized temperature feature specifically includes: In step S1041, the chip temperature values ​​corresponding to different monitoring moments in the digital temperature feature are obtained; In step S1042, a time series fitting is performed based on the chip temperature values ​​corresponding to different monitoring moments to obtain a temperature monitoring curve; a temperature feature extraction is performed on the temperature monitoring curve to obtain a monitoring temperature feature; In step S1043, a temperature calibration base point is obtained, and a correction coefficient mapping is performed according to the monitored temperature characteristics and the temperature calibration base point to obtain a static temperature drift correction coefficient.

[0037] Optionally, in some embodiments, the chip temperature values ​​corresponding to different monitoring moments are time-series fitted using Lagrange interpolation method to obtain a temperature monitoring curve.

[0038] In a specific implementation, empirical mode decomposition can be used to decompose the temperature monitoring curve into multiple intrinsic mode functions, wherein each intrinsic mode function represents a frequency component in the temperature monitoring curve. In a specific implementation, the function mean of multiple intrinsic mode functions can be used as the final monitoring temperature characteristic. In the present application, the temperature calibration base point is a known temperature-frequency relationship point, which is usually obtained through experiments or simulations. The calibration base point includes the oscillator frequency value at different temperatures. Based on the monitoring temperature characteristics and the temperature calibration base point, the static temperature drift correction coefficient is calculated by interpolation or fitting algorithm, wherein the static temperature drift correction coefficient is used to compensate for the frequency drift caused by temperature to ensure timing accuracy.

[0039] In step S105, a standard temperature sequence is obtained, a dynamic temperature drift correction coefficient is extracted based on the standard temperature sequence and the empty temperature sequence, and the timing frequency of the high-precision timing unit is dynamically adjusted according to the static temperature drift coefficient and the dynamic temperature drift coefficient. When the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby realizing a second delayed detonation mode.

[0040] It should be noted that the dynamic temperature drift coefficient reflects the influence of the temperature transfer rate on the oscillator frequency, and is used to compensate for the initiation time error caused by different temperature transfer rates under environmental interference. Optionally, in some embodiments, extracting the dynamic temperature drift correction coefficient based on the standard temperature sequence and the empty temperature sequence specifically includes: Extract the rising temperature based on the standard temperature sequence and the empty temperature sequence to obtain the standard temperature rising time and the empty temperature rising time; Determine the heat transfer rate coefficient according to the standard temperature rise time and the empty temperature rise time; Extracting correlation trends based on the standard temperature sequence and the empty discharge temperature sequence, and determining correlation detonation probability based on the correlation degree of the temperature trends; The heat transfer rate coefficient is linearly corrected based on the associated detonation probability to obtain a dynamic temperature drift correction coefficient.

[0041] It should be noted that different types of temperature signal characteristics have different probabilities of achieving detonation within a specified time. For example, in rainy weather, the temperature transfer rate is low, and the capacitor discharge takes longer to complete the detonation. The associated detonation probability described in the present application is determined based on the temperature trend when the first capacitor is discharged in the empty discharge temperature sequence, reflecting the probability that detonation can be achieved within a preset time under the temperature trend. The associated detonation probability is determined by comparing the trend with the standard temperature sequence, and the standard temperature sequence is a capacitor discharge temperature sequence monitored under a standard test environment. The heat transfer rate coefficient is linearly corrected according to the associated detonation probability, and the timer frequency can be dynamically adjusted in combination with the actual environmental conditions, thereby reducing the interference of environmental factors on the delayed detonation and improving the accuracy of the delayed detonation.

[0042] Preferably, in some embodiments, the ratio between the standard temperature rise time and the empty temperature rise time can be used as the heat transfer rate coefficient; the correlation trend is extracted according to the standard temperature sequence and the empty temperature sequence, and the correlation detonation probability is determined, which specifically includes: after normalizing the standard temperature sequence and the empty temperature sequence respectively, the absolute value of the Pearson correlation coefficient between the standard temperature sequence and the empty temperature sequence is obtained as the correlation detonation probability. In specific implementation, the correlation detonation probability can be used as a linear correction coefficient to perform linear correction on the heat transfer rate coefficient to obtain the dynamic temperature drift correction coefficient.

[0043] Optionally, in some embodiments, the associated detonation probability may be determined according to the following formula: ; in, is the associated detonation probability, and Respectively represent the standard temperature sequence and the empty temperature sequence, is the covariance of the standard temperature series and the empty temperature series, and are the standard deviations of the standard temperature series and the empty temperature series respectively.

[0044] Optionally, in some embodiments, the dynamic temperature drift correction coefficient=heat transfer rate coefficient×(1+α×associated detonation probability), where α is a preset linear correction coefficient, and the linear correction coefficient is calibrated to a constant based on experience.

[0045] Optionally, in some embodiments, dynamically adjusting the timing frequency of the high-precision timing unit according to the static temperature drift coefficient and the dynamic temperature drift coefficient specifically includes: taking the product of the static temperature drift coefficient and the dynamic temperature drift coefficient as the proportional control parameter of the forward path in the proportional-integral-differential controller, and dynamically adjusting the timing frequency of the high-precision timing unit using the proportional-integral-differential controller, wherein the proportional-integral-differential controller uses an inverting amplifier as a proportional adjustment device. In specific implementation, the forward path in the proportional-integral-differential controller has a first inverting amplifier and a second inverting amplifier, and the inverting input terminal voltages of the first and second inverting amplifiers are determined according to the coefficient values ​​of the static temperature drift coefficient and the dynamic temperature drift coefficient, respectively, so as to adjust the proportional control parameter of the forward path in the proportional-integral-differential controller, and the integral control parameter and the differential control parameter of the proportional-integral-differential controller are calibrated as constants based on experience.

[0046] Optionally, in some embodiments, the integral control parameter and the differential control parameter in the proportional-integral-derivative controller are preset to 0.01 and 0.005, respectively.

[0047] In addition, in another aspect of the present application, in some embodiments, the present application provides a high-precision delayed detonation control system, the device includes a detonation control unit, reference Figure 3 , which is a schematic diagram of the structure of exemplary hardware and / or software of an initiation control unit according to some embodiments of the present application, the initiation control unit 200 includes: an initiation data acquisition module 201, a first delayed initiation module 202 and a second delayed initiation module water temperature control module 204, which are respectively described as follows: The detonation data acquisition module 201 is used to start the high-voltage discharge circuit to control the first capacitor to discharge after receiving an external control signal through the high-voltage interface, and to collect discharge data during the discharge process to obtain a discharge delay time and a discharge temperature sequence; A first delayed detonation module 202 is used to decode and identify the external control signal, and when the decoding and identification result is a detonation instruction, the second capacitor is controlled to discharge through the high-voltage discharge circuit to achieve a first delayed detonation mode; The second delayed detonation module 203 is used to start the high-precision timing unit when the decoding recognition result is a delay instruction, and adjust the delay time of the high-precision timing unit based on the empty release delay time; The second delayed detonation module 203 is used to monitor the chip temperature through the temperature sensor during the timing process to obtain a digital temperature feature, and extract a static temperature drift correction coefficient based on the digital temperature feature; The second delayed detonation module 203 is used to obtain a standard temperature sequence, extract a dynamic temperature drift correction coefficient based on the standard temperature sequence and the empty temperature sequence, and dynamically adjust the timing frequency of the high-precision timing unit according to the static temperature drift coefficient and the dynamic temperature drift coefficient. When the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby realizing a second delayed detonation mode. The above describes in detail an example of a high-precision delayed detonation control method and system provided in an embodiment of the present application. It can be understood that in order to realize the above functions, the corresponding device includes a hardware structure and / or software module corresponding to executing each function.

[0048] Those skilled in the art should easily realize that, in combination with the units and algorithm steps of each example described in the embodiments disclosed in this document, the present application can be implemented in the form of hardware or a combination of hardware and computer software. Whether a certain function in the application is executed in hardware or in a computer software-driven hardware manner depends on the specific application and design constraints of the technical solution. Therefore, professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0049] In addition, the present application also provides a computer terminal device, which includes a memory and a processor, the memory stores a code, and the processor is configured to obtain the code and execute the above-mentioned high-precision delayed detonation control method.

[0050] In some embodiments, reference Figure 4 , which is a schematic diagram of the structure of a computer terminal device for implementing a high-precision time-delay detonation control method according to some embodiments of the present application. A high-precision time-delay detonation control method in the above embodiment can be achieved by Figure 4 The computer terminal device 300 shown in the figure is implemented, and the computer terminal device 300 includes at least one communication bus 301, a communication interface 302, a processor 303 and a memory 304.

[0051] The processor 303 may be a general-purpose central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more processors for controlling the execution of a high-precision delayed detonation control method in the present application.

[0052] The communication bus 301 may include a path for transmitting information between the above-mentioned components.

[0053] The memory 304 may be a read-only memory (ROM) or other types of static storage devices that can store static information and instructions, a random access memory (RAM) or other types of dynamic storage devices that can store information and instructions, or an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, an optical disc storage (including a compressed optical disc, a laser disc, an optical disc, a digital versatile disc, a Blu-ray disc, etc.), a magnetic disk or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer, but is not limited thereto. The memory 304 may exist independently and be connected to the processor 303 via the communication bus 301. The memory 304 may also be integrated with the processor 303.

[0054] The memory 304 is used to store the program code for executing the solution of the present application, and the execution is controlled by the processor 303. The processor 303 is used to execute the program code stored in the memory 304. The program code may include one or more software modules. The determination of the static temperature drift correction coefficient in the above embodiment can be implemented by the processor 303 and one or more software modules in the program code in the memory 304.

[0055] The communication interface 302 uses any transceiver or other device for communicating with other devices or communication networks, such as Ethernet, radio access network (RAN), wireless local area networks (WLAN), etc.

[0056] Optionally, the computer terminal device 300 may further include a power supply 305 for providing power to various devices or circuits in the real-time computer terminal device.

[0057] In a specific implementation, as an embodiment, a computer terminal device may include multiple processors, each of which may be a single-CPU processor or a multi-CPU processor. The processor here may refer to one or more devices, circuits, and / or processing cores for processing data (such as computer program instructions).

[0058] The above-mentioned computer terminal device may be a general-purpose computer terminal device or a dedicated computer terminal device. In a specific implementation, the computer terminal device may be a desktop computer, a portable computer, a network server, a personal digital assistant (PDA), a mobile phone, a tablet computer, a wireless terminal device, a communication device or an embedded device. The embodiment of the present application does not limit the type of computer terminal device.

[0059] In addition, in other aspects of the present application, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores at least one computer program, and the computer program is loaded and executed by a processor to implement the operations performed by the above-mentioned high-precision delayed detonation control method.

[0060] In summary, in a high-precision delayed detonation control method and system disclosed in an embodiment of the present application, first, after receiving an external control signal through a high-voltage interface, a high-voltage discharge circuit is started to control the empty discharge of a first capacitor, and empty discharge data is collected during the empty discharge process to obtain an empty discharge delay time and an empty discharge temperature sequence, and the external control signal is decoded and identified. When the decoding and identification result is a detonation instruction, the second capacitor is controlled to discharge through the high-voltage discharge circuit to achieve a first delayed detonation mode. When the decoding and identification result is a delay instruction, a high-precision timing unit is started, and the delay time of the high-precision timing unit is adjusted based on the empty discharge delay time. During the timing process, the temperature sensor is used to adjust the delay time of the high-precision timing unit. The sensor monitors the chip temperature to obtain a digital temperature feature, extracts a static temperature drift correction coefficient based on the digital temperature feature, obtains a standard temperature sequence, extracts a dynamic temperature drift correction coefficient based on the standard temperature sequence and the empty-discharge temperature sequence, and dynamically adjusts the timing frequency of the high-precision timing unit according to the static temperature drift coefficient and the dynamic temperature drift coefficient. When the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby realizing a second delayed initiation mode. The temperature drift coefficient can be extracted according to the empty-discharge temperature of the capacitor under environmental interference, and the timing frequency can be dynamically adjusted, thereby reducing the influence of environmental interference on the control accuracy of delayed initiation.

[0061] The above is only an embodiment of the present application, and the common knowledge such as the specific technical scheme or characteristics in the scheme is not described in detail here. It should be pointed out that for those skilled in the art, without departing from the technical scheme of the present application, several modifications and improvements can be made, which should also be regarded as the scope of protection of the present application, and these will not affect the effect of the implementation of the present application and the practicality of the patent.

[0062] The scope of protection claimed by this application shall be based on the content of its claims. The specific implementation methods and other records in the specification can be used to interpret the content of the claims. Obviously, those skilled in the art can make various changes and modifications to this application without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is also intended to include these modifications and variations.

Claims

1. A high-precision delayed detonation control method, characterized in that: include: After receiving an external control signal through the high-voltage interface, the high-voltage discharge circuit is started to control the first capacitor to discharge, and discharge data is collected during the discharge process to obtain a discharge delay time and a discharge temperature sequence; Decoding and identifying the external control signal, and when the decoding and identification result is a detonation instruction, controlling the discharge of the second capacitor through the high-voltage discharge circuit to realize a first delayed detonation mode; When the decoding recognition result is a delay instruction, the high-precision timing unit is started, and the delay time of the high-precision timing unit is adjusted based on the idle delay time; During the timing process, the chip temperature is monitored by a temperature sensor to obtain a digital temperature feature, and a static temperature drift correction coefficient is extracted based on the digital temperature feature; A standard temperature sequence is obtained, a dynamic temperature drift correction coefficient is extracted based on the standard temperature sequence and the empty temperature sequence, and the timing frequency of the high-precision timing unit is dynamically adjusted according to the static temperature drift coefficient and the dynamic temperature drift coefficient. When the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby realizing a second delayed detonation mode.

2. The method according to claim 1, characterized in that Extracting the static temperature drift correction coefficient based on the digital temperature feature specifically includes: Obtain chip temperature values ​​corresponding to different monitoring moments in the digital temperature feature; Perform time series fitting based on chip temperature values ​​corresponding to different monitoring moments to obtain a temperature monitoring curve; perform temperature feature extraction on the temperature monitoring curve to obtain a monitoring temperature feature; A temperature calibration base point is obtained, and correction coefficient mapping is performed according to the monitored temperature characteristics and the temperature calibration base point to obtain a static temperature drift correction coefficient.

3. The method according to claim 1, characterized in that Extracting the dynamic temperature drift correction coefficient based on the standard temperature sequence and the empty temperature sequence specifically includes: Extract the rising temperature based on the standard temperature sequence and the empty temperature sequence to obtain the standard temperature rising time and the empty temperature rising time; Determine the heat transfer rate coefficient according to the standard temperature rise time and the empty temperature rise time; Extracting correlation trends based on the standard temperature sequence and the empty discharge temperature sequence, and determining correlation detonation probability based on the correlation degree of the temperature trends; The heat transfer rate coefficient is linearly corrected based on the associated detonation probability to obtain a dynamic temperature drift correction coefficient.

4. The method according to claim 1, characterized in that Dynamically adjusting the timing frequency of the high-precision timing unit according to the static temperature drift coefficient and the dynamic temperature drift coefficient specifically includes: using the product of the static temperature drift coefficient and the dynamic temperature drift coefficient as a proportional control parameter of the forward path in the proportional-integral-differential controller, and using the proportional-integral-differential controller to dynamically adjust the timing frequency of the high-precision timing unit.

5. The method according to claim 1, characterized in that After monitoring the chip temperature through the temperature sensor, the method also includes: obtaining the voltage signal of the temperature sensor and converting it into a digital temperature characteristic through a high-precision analog-to-digital converter.

6. The method according to claim 1, characterized in that The received signal is decoded and the instruction type is identified through the built-in digital control unit. The decoding process includes baud rate adaptation, instruction verification and instruction type identification.

7. The method according to claim 1, characterized in that The high-voltage discharge circuit is composed of a power MOS tube, a current limiting circuit and a negative feedback control loop.

8. A high-precision delayed detonation control system, comprising a detonation control unit, characterized in that: The detonation control unit comprises: The detonation data acquisition module is used to start the high-voltage discharge circuit to control the empty discharge of the first capacitor after receiving an external control signal through the high-voltage interface, and to collect empty discharge data during the empty discharge process to obtain an empty discharge delay time and an empty discharge temperature sequence; A first delayed detonation module, used for decoding and identifying the external control signal, and when the decoding and identification result is a detonation instruction, controlling the discharge of the second capacitor through the high-voltage discharge circuit to realize a first delayed detonation mode; A second delayed detonation module is used to start the high-precision timing unit when the decoding recognition result is a delay instruction, and adjust the delay time of the high-precision timing unit based on the empty release delay time; The second delayed detonation module is used to monitor the chip temperature through the temperature sensor during the timing process to obtain a digital temperature feature, and extract a static temperature drift correction coefficient based on the digital temperature feature; The second delayed detonation module is used to obtain a standard temperature sequence, extract a dynamic temperature drift correction coefficient based on the standard temperature sequence and the empty temperature sequence, and dynamically adjust the timing frequency of the high-precision timing unit according to the static temperature drift coefficient and the dynamic temperature drift coefficient. When the timing reaches a preset delay time, the high-voltage discharge circuit is triggered to drive the second capacitor to discharge, thereby realizing a second delayed detonation mode.

9. A computer terminal device, characterized in that: The computer terminal device includes a memory and a processor, the memory stores codes, and the processor is configured to obtain the codes and execute a high-precision delayed detonation control method as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing at least one computer program, characterized in that: The computer program is loaded and executed by a processor to implement the operations performed by a high-precision delayed detonation control method as described in any one of claims 1 to 7.

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