Substrate withstand voltage test device and test system

Abstract

The invention provides a substrate withstand voltage test device and test system, and belongs to the technical field of intelligent measurement and control, the device comprises a simulation module, a quantum control module, an energy system execution module and an emergency linkage module, the simulation device collects substrate electric field data in real time to generate a dynamic three-dimensional model; the quantum control device calculates high-precision boundary conditions based on the model; the energy system executes rapid charging and discharging or protection action according to conditions; the emergency linkage device positions a breakdown point, predicts a defect type and evaluates reliability through multiple sensors, a simulation-control-protection-diagnosis closed loop is formed, the measurement precision is increased, the efficiency of determining the breakdown point is improved, breakdown diffusion is prevented, and the misjudgment rate is reduced.

Description

Technical Field

[0001] The present invention relates to the field of intelligent measurement and control technology, and in particular to a substrate withstand voltage test device and a test system. Background Art

[0002] As electronic devices develop towards high frequency and high voltage (such as 5G base stations and electric vehicles), the voltage resistance reliability of substrates faces severe challenges. Traditional testing technology has high misjudgment rate, high energy consumption, and low efficiency due to static simulation, low control accuracy, slow response speed, and manual analysis, making it difficult to meet high-end manufacturing needs.

[0003] Therefore, the present invention provides a substrate withstand voltage testing device and a testing system. Summary of the invention

[0004] The present invention provides a substrate withstand voltage test device and test system, which collects substrate electric field data in real time through a simulation device to generate a dynamic three-dimensional model; a quantum control device calculates high-precision boundary conditions based on the model; an energy system performs rapid charging and discharging or protection actions according to the conditions; an emergency linkage device locates the breakdown point through multiple sensors, predicts the defect type and evaluates the reliability, forming a simulation-control-protection-diagnosis closed loop, achieving a leap in measurement accuracy, improving the efficiency of determining the breakdown point, preventing the breakdown from spreading, and reducing the misjudgment rate.

[0005] The present invention provides a substrate withstand voltage testing device, comprising: Simulation module: obtain relevant data corresponding to the substrate test area and generate a three-dimensional electric field simulation model; Quantum control module: determining the boundary conditions of quantum system control based on the three-dimensional electric field simulation model; Energy system execution module: setting energy system actions according to the boundary conditions; Emergency linkage module: After the energy system action is triggered, the breakdown point is automatically located and the SEM prediction is superimposed to determine the reliability level of the substrate and update the three-dimensional electric field simulation model.

[0006] The present invention provides a substrate withstand voltage test device, a simulation module, comprising: Data acquisition unit: The operator wears AR glasses, scans the surface of the substrate, and obtains relevant data of the substrate through the built-in camera; Annotation unit: The AR system automatically identifies the high voltage area, the grounding area and the isolation zone on the substrate according to the relevant data, and annotates the high voltage area, the grounding area and the isolation zone with different colors to obtain an annotation result; Marking unit: Mark the metal traces and insulation areas of the substrate test area based on relevant data to obtain marking results; Model building unit: The electric field distribution of the substrate is calculated by integrating the annotation results and the marking results, and a three-dimensional electric field simulation model is generated according to the electric field distribution.

[0007] The present invention provides a substrate withstand voltage test device, a quantum control module, comprising: Key input unit: The electric field intensity matrix of the entire substrate is determined by using the simulation data generated by the three-dimensional electric field simulation model, and the quantum system extracts the maximum value in the electric field intensity matrix as the key input; Actual field strength unit: The quantum system obtains the nominal value and the safety margin of the corresponding material of the substrate from the material library based on the simulation data, and calculates the actual allowable field strength; Boundary condition unit: compare the key input with the actual allowed field strength. If the key input is less than the actual allowed field strength, no adjustment is required. If the key input is greater than the actual allowed field strength, a gradient optimization function is determined based on the key input and the actual allowed field strength. The adjustment of the boost gradient is determined based on the comparison result, and the boost curve is obtained to determine the boundary conditions of the quantum system.

[0008] The present invention provides a substrate withstand voltage test device and an energy system execution module, comprising: An action determination unit: setting a determination index and a corresponding condition level based on the boundary condition, and converting the determination index and the condition level into a bus instruction; Mode unit: parses the bus instruction and determines the intelligent energy supply mode of the energy system during the test from the energy allocation strategy table according to the parsing result; Allocation unit: determining the supply side allocation and the recovery side allocation of the energy system based on the boundary conditions; Comprehensive unit: Comprehensively determine the energy system action by combining the intelligent energy supply mode, supply side allocation and recovery side allocation.

[0009] The present invention provides a substrate withstand voltage test device and an emergency linkage module, comprising: Physical coordinate unit: after the energy system is triggered, the impedance change of each electrode pair on the substrate at the moment of breakdown is measured to obtain the first breakdown coordinate. The AR glasses capture the arc spot to obtain the second breakdown coordinate. The first breakdown coordinate and the second breakdown coordinate are weighted averaged to obtain the physical coordinate of the breakdown point. Defect area unit: combining the physical coordinates of the breakdown point and the three-dimensional electric field simulation model with the defect-process association library for SEM prediction, and using AR to annotate the defect area to obtain AR annotation results; A level determination unit: performs multi-dimensional root cause reasoning on the substrate based on the AR annotation result, determines the reliability level of the substrate according to the root cause reasoning result, and uses the reliability level to update the three-dimensional electric field simulation model.

[0010] The present invention provides a substrate withstand voltage test device, a defect area unit, comprising: Material subunit: compare the physical coordinates of the breakdown point with the design file of the substrate, map the physical coordinates of the breakdown point to the corresponding layer of the CAD model, and extract the local material properties of the layer; Defect annotation subunit: performs SEM prediction on the local material properties of the layer in combination with the defect-process association library, outputs the defect area, performs AR defect annotation on the defect area, and obtains AR annotation results.

[0011] The present invention provides a substrate withstand voltage testing device, a level determination unit, comprising: Process deviation subunit: Perform defect analysis on the AR annotation results and obtain the complete process records of the substrate. Combine the defect analysis results with the complete process records to screen potential process deviations from the defect-process association library. Probabilistic ranking subunit: Based on AR annotation results, potential process deviations, historical cases, and environmental data, it builds a process parameter-defect association map, identifies potential causal chains, and outputs root cause probability ranking; Reliability level subunit: Determine the main root cause, secondary root cause and noise interference according to the sorting results, and then determine the reliability level of the substrate and update the three-dimensional electric field simulation model.

[0012] The present invention provides a substrate withstand voltage test system, comprising: a three-dimensional electric field simulation model, a quantum system and an energy system; The three-dimensional electric field simulation model is used to simulate the electric field distribution of the substrate and determine the boundary conditions of the quantum system; The quantum system is used to analyze the simulation data of the three-dimensional electric field simulation model, output the boost curve, and generate bus instructions to guide the action of the energy system; The energy system is used to intelligently supply energy and recover energy during the test process, and to update the three-dimensional electric field simulation model.

[0013] Compared with the prior art, the beneficial effects of the present application are as follows: a dynamic three-dimensional model is generated by real-time acquisition of substrate electric field data through a simulation device; a quantum control device calculates high-precision boundary conditions based on the model; the energy system performs rapid charging and discharging or protection actions according to the conditions; the emergency linkage device locates the breakdown point through multiple sensors, predicts the defect type and evaluates the reliability, forming a simulation-control-protection-diagnosis closed loop, achieving a leap in measurement accuracy, improving the efficiency of determining the breakdown point, preventing the breakdown from spreading, and reducing the misjudgment rate.

[0014] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the written description and the accompanying drawings.

[0015] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings: Figure 1 It is a functional structure diagram of a substrate withstand voltage testing device provided by an embodiment of the present invention; Figure 2 It is a structural schematic diagram of a substrate withstand voltage testing system provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0017] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0018] Embodiment 1: The embodiment of the present invention provides a substrate withstand voltage test device, such as Figure 1 As shown, including: Simulation module: obtain relevant data corresponding to the substrate test area and generate a three-dimensional electric field simulation model; Quantum control module: determining the boundary conditions of quantum system control based on the three-dimensional electric field simulation model; Energy system execution module: setting energy system actions according to the boundary conditions; Emergency linkage module: After the energy system action is triggered, the breakdown point is automatically located and the SEM prediction is superimposed to determine the reliability level of the substrate and update the three-dimensional electric field simulation model.

[0019] In this embodiment, the relevant data of the substrate includes surface morphology, metal wiring distribution, material dielectric constant, and ambient temperature and humidity.

[0020] In this embodiment, the input of the three-dimensional electric field simulation model is the electric field distribution, and the output is simulation data, including electric field analysis results and risk identification.

[0021] In this embodiment, the operator scans the substrate through AR glasses, and the system identifies and marks the high-voltage area, grounding area, isolation zone, metal routing, and insulation area in real time; combined with the marked data, the electric field distribution is dynamically calculated and a three-dimensional simulation model is generated.

[0022] In this embodiment, the quantum system refers to a subsystem that achieves high-precision control or calculation through the principles of quantum mechanics (such as quantum bits, superposition states, entangled states, etc.), which is used to optimize electric field simulation or energy regulation, and quickly calculate the optimal control parameters under complex boundary conditions based on the electric field model (such as quantum algorithm optimization of voltage distribution between electrodes), and monitor the local electric field / temperature in real time through quantum sensors (such as NV color centers) to improve the accuracy of simulation data. For example, quantum control boundary conditions: use quantum annealing algorithms to solve the minimum energy path between electrodes to avoid electric field concentration, quantum sensing feedback: diamond quantum sensors measure nanoscale electric field distortion at the breakdown point and correct the simulation model.

[0023] In this embodiment, the energy system is the hardware and control unit responsible for the application, distribution and recovery of energy during the substrate testing process, performing precise output of high voltage / current (such as simulating workload), quickly cutting off energy and recovering residual charge (such as discharging energy storage capacitors) when breakdown occurs. For example, action triggering: applying a 1000V / 10ms pulse to a specific electrode pair according to the simulation results, emergency response: cutting off the circuit at the μs level through the IGBT switch at the moment of breakdown, and feeding energy back to the energy storage battery.

[0024] In this embodiment, the boundary condition is a constraint condition on the operation of the quantum system, for example, a voltage limit, for example, the maximum voltage limit of the quantum system is 5V.

[0025] In this embodiment, a global field strength matrix is ​​generated through three-dimensional electric field simulation, the quantum control device extracts the maximum field strength value, and the allowable threshold is calculated by comparing the material safety margin; the boost gradient is dynamically optimized, an adaptive boost curve is generated, and the boundary conditions of the quantum system are adjusted in real time.

[0026] In this embodiment, the energy system action refers to a series of precise energy operations performed by the energy system during the substrate testing process according to the boundary conditions set by the quantum control module, including energy application action, which is to apply controllable voltage / current to a specific area of ​​the substrate in accordance with the requirements of the electric field simulation model, for example, applying a step-by-step voltage boost between the electrode pair AB (such as 0V→1kV, step size 100V, duration 10ms / step); energy dynamic adjustment action is to monitor the electric field / current feedback in real time and dynamically adjust the output parameters, for example, when it is detected that the local electric field strength is close to the material threshold (such as 18kV / mm), the voltage is automatically reduced by 50% to avoid pre-breakdown; emergency protection action is a fast response operation in the event of breakdown or abnormal triggering, for example, μs-level circuit cut-off: disconnecting the high voltage source within 3μs through a solid-state relay (SSR); self-recovery action is the system automatically resuming the test process after troubleshooting, for example, after the breakdown point AR is marked, switching to the spare electrode pair to continue the unfinished test sequence.

[0027] In this embodiment, the judgment index and level are generated by boundary conditions and converted into bus instructions; after parsing the instructions, the preset strategy table is matched to determine the energy supply mode, and the energy supply side and the recovery side are dynamically allocated to finally generate the energy system action.

[0028] In this embodiment, the breakdown point refers to the physical location where insulation failure or dielectric damage occurs in a local area of ​​a substrate (such as a PCB, insulating material, electronic component, etc.) under the action of high voltage or strong electric field.

[0029] In this embodiment, the SEM prediction is based on the physical coordinates of the breakdown point and the electric field model to predict the scanning electron microscope (SEM) morphological characteristics of the defect. For example, it is predicted that there is a hole with a diameter of 5 μm at the breakdown point (compared with the actual SEM image for verification).

[0030] In this embodiment, the updating process is parameter correction. According to the defect type corresponding to the reliability level (such as L2 level corresponding to microcracks in the dielectric layer), the material parameters of the defect area in the model are adjusted (such as the dielectric constant is reduced by 10%, and the breakdown field strength threshold is lowered), the mesh is optimized, the finite element mesh is encrypted in the defect area (such as from 1mm² to 0.1mm²), the simulation accuracy of the electric field distortion is improved, and the boundary conditions are updated. If the reliability level indicates process deviation (such as etching too deep), the conductor edge geometry and thickness parameters are modified synchronously in the model, the closed loop is verified, and the field strength distribution of the breakdown point is re-simulated with the updated model, compared with the actual AR annotation results, and iteratively optimized to an error of <5%.

[0031] The working principle and beneficial effects of the above technical solution are: the simulation module collects the substrate electric field data in real time to generate a dynamic three-dimensional model; the quantum control module calculates high-precision boundary conditions based on the model; the energy system performs rapid charging and discharging or protection actions according to the conditions; the emergency linkage module locates the breakdown point through multiple sensors, predicts the defect type and evaluates the reliability, forming a simulation-control-protection-diagnosis closed loop, achieving a leap in measurement accuracy, improving the efficiency of determining the breakdown point, preventing the breakdown from spreading, and reducing the misjudgment rate.

[0032] Embodiment 2: The embodiment of the present invention provides a substrate withstand voltage test device, a simulation module, including: Data acquisition unit: The operator wears AR glasses, scans the surface of the substrate, and obtains relevant data of the substrate through the built-in camera; Annotation unit: The AR system automatically identifies the high voltage area, the grounding area and the isolation zone on the substrate according to the relevant data, and annotates the high voltage area, the grounding area and the isolation zone with different colors to obtain an annotation result; Marking unit: Mark the metal traces and insulation areas of the substrate test area based on relevant data to obtain marking results; Model building unit: The electric field distribution of the substrate is calculated by integrating the annotation results and the marking results, and a three-dimensional electric field simulation model is generated according to the electric field distribution.

[0033] In this embodiment, the marking result is that the high-voltage area corresponds to the first color, the grounding area corresponds to the second color, and the isolation zone corresponds to the third color.

[0034] In this embodiment, the marking result is a set of digital identifications of metal traces and insulation areas on the substrate surface, including geometry, attributes, and topology information, which is used for subsequent electric field simulation and defect analysis.

[0035] In this embodiment, the process of calculating the electric field distribution of the substrate by integrating the marking result with the labeling result is to align the labeling result with the annotation result, extract the geometric and electrical properties of the labeling result, and obtain the electric field distribution.

[0036] In this embodiment, the electric field distribution is a three-dimensional vector field, which represents the electric field strength and direction at each point in the substrate.

[0037] The working principle and beneficial effects of the above technical solution are: the operator scans the substrate through AR glasses, and the system identifies and marks the high-voltage area, grounding area, isolation belt, metal routing, and insulation area in real time; combined with the marked data, the electric field distribution is dynamically calculated and a three-dimensional simulation model is generated to achieve visual analysis and precise modeling of the electrical characteristics of the substrate.

[0038] Embodiment 3: The embodiment of the present invention provides a substrate withstand voltage test device, a quantum control module, including: Key input unit: The electric field intensity matrix of the entire substrate is determined by using the simulation data generated by the three-dimensional electric field simulation model, and the quantum system extracts the maximum value in the electric field intensity matrix as the key input; Actual field strength unit: The quantum system obtains the nominal value and the safety margin of the corresponding material of the substrate from the material library based on the simulation data, and calculates the actual allowable field strength; Boundary condition unit: compare the key input with the actual allowed field strength. If the key input is less than the actual allowed field strength, no adjustment is required. If the key input is greater than the actual allowed field strength, a gradient optimization function is determined based on the key input and the actual allowed field strength. The adjustment of the boost gradient is determined based on the comparison result, and the boost curve is obtained to determine the boundary conditions of the quantum system.

[0039] In this embodiment, the electric field strength matrix is ​​a matrix in which each element represents the electric field strength vector at a specific position on the substrate (usually including three components: x direction, y direction, and z direction), describing the electric field distribution of the entire substrate. For example, a three-dimensional array of 100x100x100, each element is a vector containing three floating-point numbers, representing the electric field strength at that point (for example, [0.1, 0.2, 0.05] V / m).

[0040] In this embodiment, the key input is the maximum electric field strength value extracted from the electric field strength matrix. For example, if the maximum value in the electric field strength matrix is ​​0.25 V / m, the key input is 0.25 V / m.

[0041] In this embodiment, the simulation data is the output result of the three-dimensional electric field simulation model, including the electric field strength information of the entire substrate, and is usually the electric field strength matrix itself, for example, the 100x100x100 three-dimensional array mentioned above.

[0042] In this embodiment, the material library is a database that stores electrical property parameters of various materials, such as dielectric constant, conductivity, breakdown strength, etc. For example, a table or database contains information such as material name, dielectric constant, breakdown field strength, etc. For example, for a certain polymer, it may contain information that its dielectric constant is 3.5 and its breakdown field strength is 10MV / m.

[0043] In this embodiment, the nominal value is obtained from the material library, which is the rated or typical electrical parameter value (eg, breakdown strength) of the material corresponding to the substrate. For example, for a certain polymer used for the substrate, the nominal breakdown strength in the material library is 10 MV / m.

[0044] In this embodiment, the safety margin is a coefficient or percentage reserved for safety, and is usually multiplied by the nominal value to obtain the actual allowable field strength. For example, if the safety margin is 50%, it means that the actual allowable field strength is 50% of the nominal value. If the nominal breakdown strength is 10MV / m and the safety margin is 50%, the actual allowable field strength is 5MV / m.

[0045] In this embodiment, the actual allowable field strength is the maximum electric field strength that the substrate material can actually withstand, calculated based on the nominal value and the safety margin. For example, in the above example, the actual allowable field strength is 5 MV / m.

[0046] In this embodiment, the gradient optimization function is a mathematical function used to calculate the adjustment amount of the boost gradient based on the difference between the key input and the actual allowed field strength, for example, a simple linear function: adjustment amount = k*(key input-actual allowed field strength), where k is a constant.

[0047] In this embodiment, the adjustment condition describes how the boost gradient is adjusted, for example, the boost gradient increases, decreases, or remains unchanged, for example, the boost gradient decreases by 10% or the boost gradient remains unchanged.

[0048] In this embodiment, the voltage boost curve is a curve showing the change of voltage over time, which determines the rate of voltage boost, for example, a graph with the horizontal axis being time and the vertical axis being voltage, showing a curve showing that the voltage gradually rises over time.

[0049] The working principle and beneficial effects of the above technical solution are: through three-dimensional electric field simulation, the global field strength matrix is ​​generated, the quantum control device extracts the maximum field strength value, and the allowable threshold is calculated by comparing the material safety margin; the boost gradient is dynamically optimized, an adaptive boost curve is generated, and the quantum system boundary conditions are adjusted in real time to achieve precise closed-loop control of the substrate withstand voltage test. Adaptive boost reduces invalid energy consumption, fully adapts to the 5G / EV high-voltage scenario requirements, and improves test efficiency.

[0050] Embodiment 4: The embodiment of the present invention provides a substrate withstand voltage test device, an energy system execution module, including: An action determination unit: setting a determination index and a corresponding condition level based on the boundary condition, and converting the determination index and the condition level into a bus instruction; Mode unit: parses the bus instruction and determines the intelligent energy supply mode of the energy system during the test from the energy allocation strategy table according to the parsing result; Allocation unit: determining the supply side allocation and the recovery side allocation of the energy system based on the boundary conditions; Comprehensive unit: Comprehensively determine the energy system action by combining the intelligent energy supply mode, supply side allocation and recovery side allocation.

[0051] In this embodiment, the judgment index is a parameter that quantifies the boundary conditions and is used to trigger different response strategies, such as voltage fluctuation rate (such as ±5% is normal, ±10% is warning), temperature threshold (50°C is a level 1 alarm, 80°C is an emergency shutdown).

[0052] In this embodiment, the condition level is a severity level divided according to the judgment index, for example, level 1 (normal): the index is within the safe range, level 2 (warning): the index is close to the critical value and the energy supply needs to be adjusted, level 3 (dangerous): the index exceeds the limit and the power supply needs to be cut off and energy needs to be recovered.

[0053] In this embodiment, the bus instruction encodes the judgment index and condition level into a standardized machine-executable instruction, for example, 0x01: switch to balanced energy supply mode (corresponding to level 1), 0x02: start redundant power supply (corresponding to level 2), 0x03: trigger emergency energy storage recovery (corresponding to level 3).

[0054] In this embodiment, the intelligent energy supply mode is a predefined energy supply strategy selected according to the bus instruction, for example, balanced mode: multiple power supplies evenly distribute the load (for level 1), redundant mode: main power supply + backup power supply jointly supply power (for level 2), emergency mode: cut off high-risk circuits and prioritize core loads (for level 3).

[0055] In this embodiment, the energy allocation strategy table is a mapping relationship table between modes and instructions. For example, the condition level is level 1, the bus instruction is 0x01, the functional mode is the balanced mode, the supply side allocates power A: 50%, B: 50%, and the recovery side allocates a recovery rate of 10%.

[0056] In this embodiment, the supply-side allocation is the scheduling ratio of energy sources, for example, in normal state, photovoltaic power generation (60%) + grid (40%), and in fault state, diesel generator (100%) supplies power.

[0057] In this embodiment, the recovery side distribution is a way of handling excess energy, for example, feeding the braking energy back to the energy storage battery (recovery rate 50%), and in dangerous conditions, dissipating excess energy through resistors (recovery rate 100%).

[0058] In this embodiment, the final execution instructions of the comprehensive energy supply mode and allocation strategy, for example, normal action: switch to photovoltaic + grid power supply, slowly charge the energy storage battery, emergency action: disconnect non-critical loads, start the diesel engine, and force the energy storage battery to absorb peak energy.

[0059] The working principle and beneficial effects of the above technical solution are: generate judgment indicators and levels through boundary conditions and convert them into bus instructions; after parsing the instructions, match the preset strategy table to determine the energy supply mode, dynamically allocate the energy supply side and the recovery side, and finally generate energy system actions, realize adaptive energy control, realize intelligent hierarchical response, improve response speed, and improve energy recovery efficiency.

[0060] Embodiment 5: The embodiment of the present invention provides a substrate withstand voltage test device and an emergency linkage module, including: Physical coordinate unit: after the energy system is triggered, the impedance change of each electrode pair on the substrate at the moment of breakdown is measured to obtain the first breakdown coordinate. The AR glasses capture the arc spot to obtain the second breakdown coordinate. The first breakdown coordinate and the second breakdown coordinate are weighted averaged to obtain the physical coordinate of the breakdown point. Defect area unit: combining the physical coordinates of the breakdown point and the three-dimensional electric field simulation model with the defect-process association library for SEM prediction, and using AR to annotate the defect area to obtain AR annotation results; A level determination unit: performs multi-dimensional root cause reasoning on the substrate based on the AR annotation result, determines the reliability level of the substrate according to the root cause reasoning result, and uses the reliability level to update the three-dimensional electric field simulation model.

[0061] In this embodiment, the impedance change is a sudden drop in the impedance between electrodes at the moment of breakdown (such as from 1MΩ to 10Ω). For example, in a high-voltage test, the impedance of a certain electrode pair suddenly drops from 500kΩ to 50Ω, which is marked as a potential breakdown path.

[0062] In this embodiment, the first breakdown coordinate is an initial breakdown position located by impedance mutation (based on the electrode grid coordinates). For example, the impedance detection circuit determines that the breakdown point is at electrode A (x=2.5 mm, y=3.0 mm).

[0063] In this embodiment, the arc spot is the visible light / ultraviolet spot captured by the AR glasses at the moment of breakdown. For example, the AR recognizes that the coordinates of the center of the spot are (x=2.7mm, y=3.2mm).

[0064] In this embodiment, the second breakdown coordinate is the physical coordinate corresponding to the center of the light spot.

[0065] In this embodiment, the weighted average is the final coordinate of the fused impedance and optical data (such as impedance weight 70%, spot weight 30%), for example, the final breakdown point physical coordinate = (2.5×0.7+2.7×0.3, 3.0×0.7+3.2×0.3) = (2.56mm, 3.06mm).

[0066] In this embodiment, the defect-process association library is a mapping relationship between defect types and manufacturing processes in historical data. For example, if the defect type is microcracks, the possible process root cause may be excessive etching (time + 10%).

[0067] In this embodiment, the AR annotation result is to superimpose the defect area on the actual scene of the substrate. For example, the AR annotation shows that the defect area is a circle with a center of (2.56 mm, 3.06 mm) and a radius of 0.5 mm.

[0068] In this embodiment, multi-dimensional root cause reasoning is to analyze the cause of failure by integrating physical coordinates, defect type, and process parameters. For example, in the electric field dimension, the breakdown point is located in the area with the highest field strength in the simulation model (to verify the accuracy of the model), the material dimension is that SEM shows that the dielectric constant in this area is uneven (material batch problem), and the process dimension is that the associated library matches the etching parameter deviation of this batch.

[0069] In this embodiment, the reliability level is a quantified remaining life or risk level of the substrate. For example, the level is L1, which is safe (can continue to be used) and does not require any treatment.

[0070] The working principle and beneficial effects of the above technical solution are: locating the breakdown point through impedance change and AR visual fusion, combining SEM-prediction of defect type and AR annotation, and then determining the reliability level based on multi-dimensional data analysis, and finally reversely optimizing the simulation model to form an intelligent closed loop of detection-diagnosis-decision-making-optimization, thereby achieving optimal energy regulation, improving system energy efficiency, and reducing dynamic allocation errors.

[0071] Embodiment 6: An embodiment of the present invention provides a substrate withstand voltage test device, a defect area unit, comprising: Material subunit: compare the physical coordinates of the breakdown point with the design file of the substrate, map the physical coordinates of the breakdown point to the corresponding layer of the CAD model, and extract the local material properties of the layer; Defect annotation subunit: performs SEM prediction on the local material properties of the layer in combination with the defect-process association library, outputs the defect area, performs AR defect annotation on the defect area, and obtains AR annotation results.

[0072] In this embodiment, the design file is a digital design document of the substrate, including a stacking structure, material parameters, electrical connections, etc.

[0073] In this embodiment, the corresponding layer of the CAD model is a physical coordinate mapped to a specific layer (such as a conductive layer, a dielectric layer) in the design file.

[0074] In this embodiment, the corresponding layer of the CAD model maps the physical coordinates to a specific layer (such as a conductive layer, a dielectric layer) in the design file. For example, the breakdown point coordinates (x=2.5mm, y=3.0mm) → are mapped to the L4 signal layer (the 4th layer of copper foil) of the PCB.

[0075] In this embodiment, the local material properties of the layer are material parameters of the layer where the breakdown point is located extracted from the CAD model, including: electrical properties: dielectric constant (ε), breakdown field strength (V / mm), conductivity (σ), physical properties: thickness, coefficient of thermal expansion (CTE), Young's modulus.

[0076] The working principle and beneficial effects of the above technical solution are: the breakdown point is accurately located on the CAD design layer through the coordinate mapping engine, the semantic analysis module is called to match the process database after extracting the material parameters, the defect prediction results are generated and three-dimensional space annotation is realized through the AR engine, the whole process of intelligent defect diagnosis is completed, the accuracy of breakdown point positioning is improved, and the speed of root cause analysis is increased.

[0077] Embodiment 7: The embodiment of the present invention provides a substrate withstand voltage testing device, a level determination unit, including: Process deviation subunit: Perform defect analysis on the AR annotation results and obtain the complete process records of the substrate. Combine the defect analysis results with the complete process records to screen potential process deviations from the defect-process association library. Probabilistic ranking subunit: Based on AR annotation results, potential process deviations, historical cases, and environmental data, it builds a process parameter-defect association map, identifies potential causal chains, and outputs root cause probability ranking; Reliability level subunit: Determine the main root cause, secondary root cause and noise interference according to the sorting results, and then determine the reliability level of the substrate and update the three-dimensional electric field simulation model.

[0078] In this embodiment, defect analysis is a quantitative characterization of the defect area marked by AR, for example, defect type: micro cracks in the dielectric layer (length 200μm, depth 50% layer thickness), morphological features: cracks are dendritic (indicating mechanical stress concentration), and complete process records: parameter logs for the entire substrate production process.

[0079] In this embodiment, potential process deviations are abnormal process parameters associated with defects, such as insufficient lamination temperature → poor resin fluidity → increased risk of microcracks, and etching timeout → copper foil thinning → increased local field strength.

[0080] In this embodiment, the process parameter-defect association map: a multi-dimensional causal network model, for example, A [insufficient lamination temperature] → B [incomplete resin curing], B → C [micro cracks in the dielectric layer], D [excessive etching time] → E [uneven copper foil thickness], E → F [local electric field concentration], F → C.

[0081] In this embodiment, potential causal chain: the path by which parameter deviation is transmitted to defects, for example, lamination temperature↓→resin porosity↑→dielectric strength↓→breakdown probability↑.

[0082] In this embodiment, the root cause probability ranking is based on the weight calculation of historical data and current parameters. For example, the root cause is low lamination temperature, with a corresponding probability of 65%, and the strength of evidence is process records + SEM porosity detection.

[0083] In this embodiment, the main root cause is the process deviation that plays a dominant role in the defect, such as insufficient lamination temperature (which directly leads to a decrease in the mechanical strength of the dielectric layer); the secondary root cause is a factor that aggravates the defect but is not a decisive factor, such as excessive etching time (uneven copper foil amplifies electric field distortion); noise interference is an accidental factor with low correlation, such as humidity fluctuations in the workshop on the same day (not statistically significant); Reliability level: a classification of the severity of the comprehensive root causes; level L1, the basis for judgment is a single secondary root cause (repairable), and the measures are local rework + process optimization; level L2, the basis for judgment is the main root cause (batch risk), and the measures are discontinuing the batch + tracing the supplier.

[0084] The working principle and beneficial effects of the above technical solution are: using AR technology to obtain defect locations, combining process records and defect-process association libraries to screen potential process deviations. Using historical data to build a process parameter-defect association map, identify potential causal chains, and determine the main and secondary root causes and noise based on the root cause probability ranking, and finally determine the substrate reliability level and update the simulation model, which improves the efficiency and accuracy of defect analysis, shortens the fault diagnosis time, reduces the misjudgment rate, and realizes accurate evaluation of the substrate reliability level.

[0085] Embodiment 8: The embodiment of the present invention provides a substrate withstand voltage test system, such as Figure 2 As shown, it includes: three-dimensional electric field simulation model, quantum system and energy system; The three-dimensional electric field simulation model is used to simulate the electric field distribution of the substrate and determine the boundary conditions of the quantum system; The quantum system is used to analyze the simulation data of the three-dimensional electric field simulation model, output the boost curve, and generate bus instructions to guide the action of the energy system; The energy system is used to intelligently supply energy and recover energy during the test process, and to update the three-dimensional electric field simulation model.

[0086] The working principle and beneficial effects of the above technical solution are: the three-dimensional electric field simulation model simulates the electric field distribution of the substrate, provides boundary conditions for the quantum system, and the quantum system analyzes the simulation data, generates a boost curve and bus instructions, and guides the energy system to perform intelligent energy supply and energy recovery, thereby realizing the automation and optimization of the test process, reducing energy consumption and testing costs, and improving the reliability of test results.

[0087] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate withstand voltage test device, characterized in that: include: Simulation module: obtain relevant data corresponding to the substrate test area and generate a three-dimensional electric field simulation model; Quantum control module: determining the boundary conditions of quantum system control based on the three-dimensional electric field simulation model; Energy system execution module: setting energy system actions according to the boundary conditions; Emergency linkage module: After the energy system action is triggered, the breakdown point is automatically located and the SEM prediction is superimposed to determine the reliability level of the substrate and update the three-dimensional electric field simulation model.

2. A substrate withstand voltage test device according to claim 1, characterized in that: Simulation modules, including: Data acquisition unit: The operator wears AR glasses, scans the surface of the substrate, and obtains relevant data of the substrate through the built-in camera; Annotation unit: The AR system automatically identifies the high voltage area, the grounding area and the isolation zone on the substrate according to the relevant data, and annotates the high voltage area, the grounding area and the isolation zone with different colors to obtain an annotation result; Marking unit: Mark the metal traces and insulation areas of the substrate test area based on relevant data to obtain marking results; Model building unit: The electric field distribution of the substrate is calculated by integrating the annotation results and the marking results, and a three-dimensional electric field simulation model is generated according to the electric field distribution.

3. A substrate withstand voltage testing device according to claim 1, characterized in that: Quantum control module, including: Key input unit: The electric field intensity matrix of the entire substrate is determined by using the simulation data generated by the three-dimensional electric field simulation model, and the quantum system extracts the maximum value in the electric field intensity matrix as the key input; Actual field strength unit: The quantum system obtains the nominal value and the safety margin of the corresponding material of the substrate from the material library based on the simulation data, and calculates the actual allowable field strength; Boundary condition unit: compare the key input with the actual allowed field strength. If the key input is less than the actual allowed field strength, no adjustment is required. If the key input is greater than the actual allowed field strength, a gradient optimization function is determined based on the key input and the actual allowed field strength. The adjustment of the boost gradient is determined based on the comparison result, and the boost curve is obtained to determine the boundary conditions of the quantum system.

4. A substrate withstand voltage testing device according to claim 1, characterized in that: Energy system execution module, including: An action determination unit: setting a determination index and a corresponding condition level based on the boundary condition, and converting the determination index and the condition level into a bus instruction; Mode unit: parses the bus instruction and determines the intelligent energy supply mode of the energy system during the test from the energy allocation strategy table according to the parsing result; Allocation unit: determining the supply side allocation and the recovery side allocation of the energy system based on the boundary conditions; Comprehensive unit: Comprehensively determine the energy system action by combining the intelligent energy supply mode, supply side allocation and recovery side allocation.

5. The substrate withstand voltage testing device according to claim 1, characterized in that: Emergency linkage module, including: Physical coordinate unit: after the energy system is triggered, the impedance change of each electrode pair on the substrate at the moment of breakdown is measured to obtain the first breakdown coordinate. The AR glasses capture the arc spot to obtain the second breakdown coordinate. The first breakdown coordinate and the second breakdown coordinate are weighted averaged to obtain the physical coordinate of the breakdown point. Defect area unit: combining the physical coordinates of the breakdown point and the three-dimensional electric field simulation model with the defect-process association library for SEM prediction, and using AR to annotate the defect area to obtain AR annotation results; A level determination unit: performs multi-dimensional root cause reasoning on the substrate based on the AR annotation result, determines the reliability level of the substrate according to the root cause reasoning result, and uses the reliability level to update the three-dimensional electric field simulation model.

6. A substrate withstand voltage testing device according to claim 5, characterized in that: Defective area unit, including: Material subunit: compare the physical coordinates of the breakdown point with the design file of the substrate, map the physical coordinates of the breakdown point to the corresponding layer of the CAD model, and extract the local material properties of the layer; Defect annotation subunit: performs SEM prediction on the local material properties of the layer in combination with the defect-process association library, outputs the defect area, performs AR defect annotation on the defect area, and obtains AR annotation results.

7. A substrate withstand voltage testing device according to claim 5, characterized in that: Level determination units include: Process deviation subunit: Perform defect analysis on the AR annotation results and obtain the complete process records of the substrate. Combine the defect analysis results with the complete process records to screen potential process deviations from the defect-process association library. Probabilistic ranking subunit: Based on AR annotation results, potential process deviations, historical cases, and environmental data, it builds a process parameter-defect association map, identifies potential causal chains, and outputs root cause probability ranking; Reliability level subunit: Determine the main root cause, secondary root cause and noise interference according to the sorting results, and then determine the reliability level of the substrate and update the three-dimensional electric field simulation model.

8. A substrate withstand voltage test system, characterized in that: include: Three-dimensional electric field simulation models, quantum systems, and energy systems; The three-dimensional electric field simulation model is used to simulate the electric field distribution of the substrate and determine the boundary conditions of the quantum system; The quantum system is used to analyze the simulation data of the three-dimensional electric field simulation model, output the boost curve, and generate bus instructions to guide the action of the energy system; The energy system is used to intelligently supply energy and recover energy during the test process, and to update the three-dimensional electric field simulation model.

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