Thin film structures for EUV lithography and methods of making same

Abstract

The invention relates to a thin film structure for EUV lithography and a method of manufacturing the same. A method of manufacturing a semiconductor device includes heating a thin film disposed over a photomask. Actinic radiation passes through the thin film to selectively expose the photoresist layer on the substrate. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer.

Description

Technical Field

[0001] The present disclosure relates to thin film structures for EUV lithography and methods of manufacturing the same. Background Art

[0002] A pellicle is a thin transparent film stretched on a frame and bonded to a photomask to protect it from damage, dust, and / or moisture. In extreme ultraviolet (EUV) lithography, pellicles with high transparency, high mechanical strength, and low or no contamination in the EUV wavelength region are often used. Summary of the invention

[0003] According to one aspect of the present disclosure, a method for manufacturing a semiconductor device is provided, comprising: heating a thin film disposed over a photomask; directing actinic radiation through the thin film to selectively expose a photoresist layer on a substrate; and developing the selectively exposed photoresist layer to form a pattern in the photoresist layer.

[0004] According to another aspect of the present disclosure, a method for manufacturing a semiconductor device is provided, comprising: selectively exposing a photoresist layer disposed on a substrate to actinic radiation, wherein the actinic radiation passes through a thin film disposed on a photomask and the actinic radiation is reflected from the photomask; applying an electric current to the thin film to heat the thin film when the actinic radiation passes through the thin film; and developing the selectively exposed photoresist layer to form a pattern in the photoresist layer.

[0005] According to yet another aspect of the present disclosure, there is provided a thin film, comprising: a transparent conductive film disposed on a frame, wherein the frame comprises two or more conductive electrodes disposed on the frame. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] When read in conjunction with the accompanying drawings, various aspects of the present disclosure may be best understood through the following detailed description. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the size of various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1A and Figure 1B A pellicle for an EUV photomask according to an embodiment of the present disclosure is shown.

[0008] Figure 2A , Figure 2B , Figure 2C and Figure 2D Various views of multi-walled nanotubes according to embodiments of the present disclosure are shown.

[0009] Figure 3A , Figure 3B and Figure 3C A manufacturing process of a mesh membrane according to an embodiment of the present disclosure is shown.

[0010] Figure 3D The invention shows a manufacturing process of a mesh film according to an embodiment of the present invention, and Figure 3E A flow chart showing a process for manufacturing a mesh membrane according to an embodiment of the present disclosure is shown.

[0011] Figure 4A and Figure 4B A cross-sectional view and a plan (top) view of one of the various stages in manufacturing a pellicle for an EUV photomask according to an embodiment of the present disclosure are shown.

[0012] Figure 5A and Figure 5B A cross-sectional view and a plan (top) view of one of the various stages in manufacturing a pellicle for an EUV photomask according to an embodiment of the present disclosure are shown.

[0013] Fig. 6A and Figure 6B A cross-sectional view and a plan (top) view of one of the various stages in manufacturing a pellicle for an EUV photomask according to an embodiment of the present disclosure are shown.

[0014] Fig. 7A and Figure 7B A flow chart for fabricating a pellicle / photomask structure according to an embodiment of the present disclosure is shown.

[0015] Fig. 8A and Figure 8B A schematic diagram of a thin film according to an embodiment of the present disclosure is shown.

[0016] Fig.9A , Fig. 9B , Fig. 9C and Fig.9D A schematic diagram showing a method of manufacturing a thin film according to an embodiment of the present disclosure is shown. Fig.9E A cross-sectional view of a thin film according to an embodiment of the present disclosure is shown.

[0017] Fig. 10A , Fig. 10B , Fig. 10C and Fig. 10D A schematic diagram showing a method of manufacturing a thin film according to an embodiment of the present disclosure is shown. Fig. 10E A cross-sectional view of a thin film according to an embodiment of the present disclosure is shown.

[0018] Fig.11A , Fig. 11B and Fig. 11C A schematic diagram showing a method of manufacturing a thin film according to an embodiment of the present disclosure is shown. Fig.11D A cross-sectional view of a thin film according to an embodiment of the present disclosure is shown.

[0019] Fig. 12A and Fig. 12B A plan view of a thin film frame with conductive electrodes according to an embodiment of the present disclosure is shown. Fig. 12C is a cross-sectional view of a thin film according to an embodiment of the present disclosure.

[0020] Fig.13A and Fig. 13B A plan view of a thin film frame with conductive electrodes according to an embodiment of the present disclosure is shown. Fig. 13C and Fig.13D is a cross-sectional view of a thin film according to an embodiment of the present disclosure. Fig.13E A plan view of a thin film frame with conductive electrodes according to an embodiment of the present disclosure is shown.

[0021] Fig.14 A schematic diagram of a pellicle / photomask structure according to an embodiment of the present disclosure is shown.

[0022] Fig.15A , Fig. 15B and Fig. 15C A flow chart for manufacturing a semiconductor device according to an embodiment of the present disclosure is shown.

[0023] Fig.16 A schematic diagram illustrating forming a nanotube bundle according to an embodiment of the present disclosure is shown.

[0024] Fig.17 Shown is a schematic diagram illustrating the removal or conversion of amorphous carbon according to an embodiment of the present disclosure.

[0025] Fig.18A , Fig.18B , Fig. 18C , Fig.18D and Fig.18E Various views are shown of removing residual catalyst and forming nanotube bundles according to embodiments of the present disclosure.

[0026] Fig.19 A schematic diagram illustrating the removal of contaminants from a thin film according to an embodiment of the present disclosure is shown.

[0027] Fig. 20 Shown is a schematic diagram illustrating decomposition of contaminants from a thin film according to an embodiment of the present disclosure.

[0028] Fig.21A and Fig.21B Shown is a schematic diagram illustrating the removal of wrinkles from a nanotube film according to an embodiment of the present disclosure.

[0029] Fig.22A and Fig. 22B is a schematic diagram of a controller according to some embodiments of the present disclosure.

[0030] Fig.23A A flow chart of a method for manufacturing a semiconductor device is shown, and Fig. 23B , Fig.23C , Fig.23D and Fig.23E Sequential manufacturing operations of a method of manufacturing a semiconductor device according to an embodiment of the present disclosure are shown. DETAILED DESCRIPTION

[0031] It is to be understood that the following disclosure provides many different embodiments or examples for implementing the different features of the present invention. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, the size of the element is not limited to the disclosed range or value, but may depend on the process conditions and / or desired characteristics of the device. In addition, in the following description, forming a first feature on or on a second feature may include an embodiment in which the first feature and the second feature are formed in direct contact, and may also include an additional feature that may be inserted between the first feature and the second feature to form, so that the first feature and the second feature may not be in direct contact. For simplicity and clarity, various features may be arbitrarily drawn in different proportions. In the accompanying drawings, some layers / features may be omitted for simplicity.

[0032] In addition, spatially related terms (e.g., "below," "below," "lower," "above," "on," etc.) may be used herein to easily describe the relationship of an element or feature shown in the figure relative to another (one or more) element or (one or more) feature. In addition to the orientation depicted in the figure, these spatially related terms are also intended to include different orientations of the device in use or operation. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially related descriptors used herein can be similarly interpreted accordingly. In addition, the term "made of..." can mean "including" or "consisting of...". In addition, in the following manufacturing process, there may be one or more additional operations between the operations, and the order of the operations may be changed. In the present disclosure, unless otherwise explained, the phrase "at least one of A, B, and C" means any one of A, B, C, A+B, A+C, B+C, or A+B+C, and does not mean one from A, one from B, and one from C. The materials, configurations, structures, operations, and / or dimensions explained with one embodiment can be applied to other embodiments, and a detailed description thereof can be omitted.

[0033] EUV lithography is one of the key technologies to extend Moore's law. However, due to wavelength scaling from 193nm (ArF) to 13.5nm, EUV light sources suffer from strong power attenuation due to environmental adsorption. Even if the stepper / scanner chamber is operated under vacuum to prevent strong EUV adsorption by gases, maintaining high EUV transmittance from the EUV light source to the wafer is still an important factor for EUV lithography.

[0034] Thin films usually require high transparency and low reflectivity. In UV or DUV lithography, thin films are made of transparent resin films. However, in EUV lithography, resin-based films are not acceptable, and non-organic materials such as polysilicon, silicide, or metal films are used in some embodiments.

[0035] Carbon nanotubes (CNTs) are one of the materials suitable for thin films for EUV photomasks because CNTs have a high EUV transmittance of over 96.5%. In general, thin films for EUV reflective masks require the following properties: (1) long service life in an EUV stepper / scanner in an operating environment rich in hydrogen radicals; (2) strong mechanical strength to minimize the droop effect during vacuum pumping and exhaust operations; (3) high or perfect blocking properties for particles larger than about 20 nm (killer particles); and (4) good heat dissipation to prevent the film from being burned by EUV radiation. Other nanotubes made of non-carbon-based materials can also be used for thin films for EUV photomasks. In some embodiments of the present disclosure, the nanotubes are one-dimensional elongated tubes having a diameter in the range of about 0.5 nm to about 100 nm.

[0036] In the present disclosure, a pellicle for an EUV photomask includes a mesh film having a plurality of nanotubes forming a mesh structure. In addition, a method of treating the mesh film to remove contaminants and increase mechanical strength is disclosed.

[0037] Figure 1A and Figure 1B An EUV film 10 according to an embodiment of the present disclosure is shown. In some embodiments, the film 10 for an EUV reflective mask includes a main mesh film 100 disposed on and attached to a film frame 15. In some embodiments, the main mesh film 100 is a transparent film that is transparent to electromagnetic radiation (e.g., EUV radiation). In some embodiments, the transparent film 100 has an EUV transmittance greater than 96.5%. The transparent film 100 may be opaque to some electromagnetic wavelengths (e.g., infrared or visible radiation) and transparent to other electromagnetic wavelengths (e.g., EUV radiation or X-ray radiation). In some embodiments, as Figure 1A As shown, the main mesh film 100 includes a plurality of single-walled nanotubes 100S, while in other embodiments, as shown in FIG. Figure 1BAs shown, the main mesh film 100 includes a plurality of multi-walled nanotubes 100M. In some embodiments, the single-walled nanotubes are carbon nanotubes. In other embodiments, the single-walled nanotubes are nanotubes made of non-carbon-based materials. In some embodiments, the non-carbon-based materials include at least one of boron nitride (BN), SiC, or transition metal disulfide (TMD), wherein the TMD is made of MX 2 , wherein M = Mo, W, Pd, Pt and / or Hf, and X = S, Se and / or Te. In some embodiments, the TMD is MoS 2 、MoSe 2 , WS 2 or WSe 2 One of them.

[0038] In some embodiments, some of the single-walled nanotubes form nanotube bundles attached to each other.

[0039] In certain embodiments, multi-wall nanotubes are coaxial nanotubes having two or more tubes coaxially surrounding (one or more) inner tubes. In certain embodiments, main mesh film 100 only includes one type of nanotube (single wall / multi-wall or material), and in other embodiments, different types of nanotubes form main mesh film. In certain embodiments, multi-wall nanotubes are multi-wall carbon nanotubes. In certain embodiments, some multi-wall nanotubes form nanotube bundles attached to each other.

[0040] In some embodiments, when mounted on the EUV mask, a film (support) frame 15 is attached to the main mesh film 100 to maintain the space between the main mesh film of the film and the EUV mask (pattern area). The film frame 15 of the film is attached to the surface of the EUV photomask by a suitable bonding material. In some embodiments, the bonding material is an adhesive, such as an acrylic or silicone-based glue or a cross-linking adhesive. The size of the frame structure is larger than the area of ​​the black border of the EUV photomask, so that the film not only covers the circuit pattern area of ​​the photomask, but also covers the black border.

[0041] Figure 2A , Figure 2B , Figure 2C and Figure 2D Various views of multi-walled nanotubes according to embodiments of the present disclosure are shown.

[0042] In some embodiments, the nanotubes in the primary web film 100 include multi-walled nanotubes, which are also referred to as coaxial nanotubes. Figure 2A shows a perspective view of a multi-walled coaxial nanotube having three tubes 210, 220 and 230, Figure 2BA cross-sectional view thereof is shown. In some embodiments, the inner tube 210 and the outer tubes 220 and 230 are carbon nanotubes. In other embodiments, the inner tube or one or more of the two outer tubes are non-carbon-based nanotubes, such as boron nitride nanotubes.

[0043] The number of tubes in a multi-walled nanotube is not limited to three. In some embodiments, the multi-walled nanotube has two coaxial nanotubes, such as Figure 2C As shown, and in other embodiments, the multi-walled nanotube includes an innermost tube 210 and first to Nth nanotubes (including an outermost tube 200N), where N is a natural number from 1 to about 20, such as Figure 2D In some embodiments, N ranges from 5 to 10. In some embodiments, at least one of the first to Nth outer layers is a nanotube coaxially surrounding the innermost nanotube 210. In some embodiments, all of the innermost tubes 210 and the first to Nth outer layers are carbon nanotubes. In other embodiments, one or more tubes are non-carbon-based nanotubes.

[0044] In some embodiments, the diameter of the innermost nanotube is in the range of about 0.5 nm to about 20 nm, and in other embodiments in the range of about 1 nm to about 10 nm. In some embodiments, the diameter of the multi-walled nanotube (i.e., the diameter of the outermost tube) is in the range of about 3 nm to about 40 nm, and in other embodiments in the range of about 5 nm to about 20 nm. In some embodiments, the length of the multi-walled nanotube is in the range of about 0.5 μm to about 50 μm, and in other embodiments in the range of about 1.0 μm to about 20 μm.

[0045] Figure 3A , Figure 3B and Figure 3C A method for manufacturing a nanotube network membrane for a thin film according to an embodiment of the present disclosure is shown.

[0046] In some embodiments, the carbon nanotubes are formed by a chemical vapor deposition (CVD) process. Figure 3A As shown in FIG. 1 , the CVD process is performed by using a vertical furnace, and as Figure 3B As shown, the synthesized nanotubes are deposited on the support film 80. In some embodiments, the carbon nanotubes are formed from a carbon source gas (precursor) using an appropriate catalyst, such as Fe or Ni. Then, the mesh film 100 formed on the support film 80 is separated from the support film 80 and transferred to the film frame 15, as shown in FIG. Figure 3C In some embodiments, the stage or base on which the support film 80 is disposed is rotated continuously or intermittently (in a stepwise manner) so that the synthesized nanotubes are deposited on the support film 80 in different or random directions.

[0047] Figure 3D A method for manufacturing a mesh film according to an embodiment of the present disclosure is shown, and Figure 3E A flow chart of a manufacturing method 300 according to an embodiment of the present disclosure is shown. In operation S310, nanotubes are formed by a CVD method in some embodiments, as described above. In some embodiments, nanotubes are formed by various other methods, such as arc discharge or laser ablation methods.

[0048] In operation S320, the nanotubes are dispersed in a solution, such as Figure 3D The solution includes a solvent (such as water or an organic solvent) and a surfactant (such as sodium dodecyl sulfate (SDS)). The nanotubes are one type, or two or more types of nanotubes (material and / or number of walls).

[0049] like Figure 3D As shown, the support film 80 is placed between the chamber or cylinder in which the nanotube dispersion solution is disposed and the vacuum chamber. In some embodiments, the support film is an organic or inorganic porous or mesh material. In some embodiments, the support film is a woven or non-woven fabric. In some embodiments, the support film has a circular shape in which a 150 mm × 150 mm square (the size of an EUV mask) film can be placed.

[0050] like Figure 3D As shown, the pressure in the vacuum chamber is reduced so that pressure is applied to the solvent in the chamber or cylinder. Since the mesh or pore size of the support film is sufficiently smaller than the size of the nanotubes, in operation S330, when the solvent passes through the support film, the nanotubes are captured by the support film. In operation S340, the support film on which the nanotubes are deposited is connected to the support film. Figure 3D In some embodiments, the nanotubes are separated by a filtration device and then dried. In some embodiments, the filtration-deposition is repeated to obtain a nanotube network layer of desired thickness. In some embodiments, after depositing the nanotubes in the solution, other nanotubes are dispersed in the same or a new solution and the filtration-deposition is repeated. In other embodiments, after drying the nanotubes, another filtration-deposition is performed. In the repeated process, the same type of nanotubes are used in some embodiments, while different types of nanotubes are used in other embodiments. In some embodiments, the nanotubes dispersed in the solution include multi-walled nanotubes.

[0051] Figure 4A and FIG. 4B to FIG. 6A and Figure 6B The cross-sectional view ("A") and plan (top) view ("B") of various stages of a pellicle for manufacturing an EUV photomask according to an embodiment of the present disclosure are shown. It should be understood that additional embodiments of the method may be Figures 4A-6BAdditional operations are provided before, during, and after the processes shown, and some operations described below may be replaced or eliminated. The order of operations / processes may be interchanged. The materials, configurations, methods, processes, and / or dimensions explained with respect to the aforementioned embodiments may be applied to the following embodiments, and their detailed description may be omitted.

[0052] like Figure 4A and Figure 4B As shown, a nanotube layer 90 is formed on a support film 80 by one or more methods as described above. In some embodiments, the nanotube layer 90 includes single-walled nanotubes, multi-walled nanotubes, or a mixture thereof. In some embodiments, the nanotube layer 90 includes only single-walled nanotubes. In some embodiments, the nanotubes are carbon nanotubes.

[0053] Then, if Figure 5A and Figure 5B As shown, the film frame 15 is attached to the nanotube layer 90. In some embodiments, the film frame 15 is formed of one or more layers of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, aluminum oxide, or ceramic material. Figure 5B As shown, the film frame 15 has a rectangular (including square) frame shape that is larger than the black border region of the EUV mask and smaller than the substrate of the EUV mask. In some embodiments, the film frame is attached to the nanotube layer by a cold welding operation.

[0054] Next, if Fig. 6A and Figure 6B As shown, in some embodiments, the nanotube layer 90 and the support film 80 are cut into a rectangular shape having the same size as the film frame 15 or slightly larger than the film frame 15, and then the support film 80 is separated or removed. When the support film 80 is made of an organic material, the support film 80 is removed by wet etching using an organic solvent.

[0055] Fig. 7A and Figure 7B is a flow chart showing a method for manufacturing a thin film / photomask structure according to an embodiment of the present disclosure. It should be understood that additional embodiments of the method may be Fig. 7A and Figure 7B Additional operations are provided before, during, and after the processes shown, and some of the operations described below may be replaced or eliminated. The order of operations / processes may be interchanged.

[0056] exist Fig. 7AIn the process of forming a nanotube according to any method disclosed above in operation S410, and forming a nanotube film according to any method disclosed above in operation S420. Then, a conductive electrode is formed on a film frame in operation S430. The nanotube film is attached to the film frame and the conductive electrode to form a film in operation S440, and then the film is attached to a photomask in operation S450.

[0057] In another embodiment of the present disclosure, Figure 7B As shown in the flow chart, the thin film / photomask structure is formed in different operation sequences 500. Fig. 7A In the process of forming a nanotube according to any method disclosed above in operation S510, and forming a nanotube film according to any method disclosed above in operation S520. Then, in operation S530, the nanotube film is attached to a film frame. Subsequently, in operation S540, a conductive electrode is formed on the nanotube film to form a thin film. Then, in operation S550, the thin film is attached to a photomask to form a thin film / photomask structure.

[0058] The method of manufacturing the thin film / photomask structure will be explained in further detail later in this article.

[0059] Fig. 8A and Figure 8B A schematic diagram of a thin film according to an embodiment of the present disclosure is shown. Fig. 8A is a cross-sectional view across membrane 10 showing the nanotube film disposed over a conductive electrode 55 formed on membrane frame 15 . Figure 8B is a cross-sectional view along the film frame 15 .

[0060] Fig.9A , Fig. 9B , Fig. 9C and Fig.9D Schematic diagram of a method for manufacturing a thin film according to an embodiment of the present disclosure is shown. Fig.9A As shown, an insulating film frame 15 is provided. The film frame 15 can be electrically insulating and thermally insulating. In some embodiments, the film frame 15 is made of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, aluminum oxide, ceramic material or any other suitable electrically insulating and thermally insulating material.

[0061] like Fig. 9BAs shown, two opposite sides of the frame 15 are coated with a conductive material to form a conductive electrode 55. The conductive material of the electrode can be a conductive material with a high melting point. In some embodiments, the conductive material is a metal, including Cu, Au, Ni, Ag and alloys thereof, and any other suitable metal. In some embodiments, the conductive material includes other conductive materials, such as graphite. The conductive material is deposited on the frame by any suitable deposition method, including chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), electroplating and chemical plating. Coating the two opposite sides of the frame 15 with a conductive material allows the subsequently formed film to be uniformly heated by passing an electric current through the film from one side to the other.

[0062] like Fig. 9C As shown, nanotube film 100 prepared by any of the methods disclosed herein is attached to frame 15 and conductive electrode 55 to form a thin film in 9D. Fig.9E A cross-sectional view of the film 10 along line AA is shown, illustrating the nanotube film 100 disposed over the conductive electrode 55 and the film frame 15 .

[0063] Fig. 10A , Fig. 10B , Fig. 10C and Fig. 10D Schematic diagram of a method for manufacturing a thin film according to an embodiment of the present disclosure is shown. Fig. 10A As shown, there is provided an insulating film frame 15. The film frame 15 is made of any of the electrically insulating and thermally insulating materials disclosed above.

[0064] like Fig. 10B As shown, a nanotube film 100 prepared by any method disclosed herein is placed on a frame 15 and attached to the frame 15. Then, a mask or jig 45 is placed on the nanotube film, exposing the opposite side of the frame 15. Fig. 10C In the embodiment, two exposed opposite sides of the frame 15 are coated with a conductive material to form conductive electrodes 55. Fig. 10D In FIG. 4 , the mask or fixture 45 is removed, showing the thin film 10 ′. The electrodes may be formed of any high melting point conductive material disclosed above. Fig. 10E A cross-sectional view of the film 10 ′ along line BB is shown, showing the conductive electrode 55 disposed over the nanotube film 100 and the film frame 15 .

[0065] Fig.11A , Fig. 11B and Fig. 11C Schematic diagram of a method for manufacturing a thin film according to an embodiment of the present disclosure is shown. Fig.11A As shown, there is provided an insulating film frame 15. The film frame 15 is made of any of the electrically insulating and thermally insulating materials disclosed above.

[0066] like Fig. 11B As shown, the nanotube film 100 prepared by any method disclosed herein is placed on the frame 15 and attached to the frame 15. Then, as shown in FIG. Fig. 11C As shown, the conductive plates 50 are disposed on and attached to opposite sides of the frame 15 to form the film 10 ”. The conductive plates 50 may be formed of any of the materials disclosed above for the conductive electrodes 55 . Fig.11D A cross-sectional view of the film 10 ″ along line CC is shown, showing the conductive plate 50 disposed over the nanotube film 100 and the film frame 15 .

[0067] Fig. 12A and Fig. 12B FIG. 1 shows a plan view of a thin film frame with a conductive electrode according to an embodiment of the present disclosure. Fig. 12A As shown, the film frame 15 is rectangular in shape, and the conductive electrodes 55 are formed on the shorter opposite sides. In other embodiments, the conductive electrodes are formed on the longer opposite sides of the frame, such as Fig. 12B As shown. A conductive lead 85 (eg, a wire) is attached to the conductive electrode 55. The conductive lead 85 may be formed of any suitable conductive material, including copper, aluminum, and alloys thereof. In some embodiments, the conductive lead is attached to a power source. Fig. 12C is a cross-sectional view of the film along line DD, including nanotube film 100 disposed on a conductive electrode and a frame.

[0068] In some embodiments, a plurality of electrodes 55 are disposed on the film frame, such as Fig.13A and Fig. 13B As shown. A conductive lead 85 is attached to each of the plurality of electrodes 55. In some embodiments, the plurality of electrodes 55 are disposed on the shorter sides of the rectangular frame 15, such as Fig.13A As shown, and in other embodiments, multiple electrodes 55 are arranged on the longer sides of the rectangular frame, such as Fig. 13B As shown. Five electrodes are shown on each side of the frame, but the present disclosure is not limited to five electrodes on each side. In some embodiments, the number of electrodes on each opposite side of the frame ranges from two to ten, and in other embodiments exceeds ten. The electrodes are made of any conductive material disclosed herein.

[0069] Conductive electrode 55 may be formed by any suitable technique, including masking portions of the frame and depositing a conductive material over the exposed portions of the frame, and then placing nanotube film 100 over conductive electrode 55 and the frame, such as Fig. 13C shown. Fig. 13C1 is a cross-sectional view along line EE after the carbon nanotube film is disposed on the conductive electrode 55 and the frame 15. In other embodiments, a plurality of recesses are formed in the frame, and a conductive material is deposited in the recesses. In some embodiments, the recesses are formed by photolithography and etching techniques. The conductive material is then deposited into the recesses, and the electrode is planarized, for example, by an etch-back operation or a chemical mechanical polishing operation. Then, the nanotube film 100 is disposed on the frame 15 and the conductive electrode 55. Fig.13D In the embodiment shown in FIG. 5 , as shown in the cross-sectional view along line EE, nanotube film 100 contacts both frame 15 and conductive electrode 55. In some embodiments, nanotube film 100 is flush with frame 15 and conductive electrode 55.

[0070] In some embodiments, electrodes 55 are formed on each side of frame 15, such as Fig.13E Electrode 55 may be formed of any material and operation similar to those disclosed herein.

[0071] The film 10 is then attached to the surface of the EUV photomask 60 through the insulating frame 15 using a suitable bonding material 65. In some embodiments, the bonding material is an adhesive, such as an acrylic or silicone-based glue or a cross-linking adhesive. Fig.14 As shown, the size of the frame 15 is larger than the area of ​​the black border 63 of the EUV photomask 60 , so that the film covers not only the circuit pattern area 62 of the photomask 60 , but also the black border 63 .

[0072] During semiconductor device manufacturing operations, the conductive leads are connected to a power source 135 or a controller 150. During operation of an EUV lithography exposure apparatus including a stepper or scanner, current is provided from the power source 135 to the conductive electrode 55 via the conductive leads 85. The current may be alternating current (AC) or direct current (DC). In some embodiments, a voltage of about 5V to about 500V is applied to the conductive electrode 55. In some embodiments, a voltage of about 50V to about 400V is applied to the conductive electrode 55, and in other embodiments, a voltage of about 100V to 300V is applied to the conductive electrode 55. The current heats the nanotube film of the thin film by Joule heating.

[0073] Heating the nanotube film of the thin film improves the lithography exposure operation. In some embodiments, heating the nanotube film removes impurities from the thin film, thereby maintaining high EUV radiation transmission through the thin film. In some embodiments, due to electrostatic forces, the electric field on the nanotube film repels contaminant particles from the film, which also prevents contaminant particles from approaching the film. The heated nanotube film can also burn or decompose contaminant particles attached to the film. Heating the nanotube film removes metal-based catalysts, such as Fe catalysts used to produce carbon nanotubes. In some embodiments, heating the nanotube film provides up to a 1% increase in EUV radiation 70 transmitted through the thin film 10.

[0074] In some embodiments, the nanotube film 100 is heated to a temperature of about 500°C to about 2000°C. In other embodiments, the nanotube film is heated to a temperature of about 750°C to about 1750°C, and in other embodiments, the nanotube film is heated to a temperature of about 1000°C to about 1500°C. Heating the nanotube film to a temperature below the disclosed range may result in insufficient removal of contaminants from the nanotube film 100. Heating the nanotube film at a temperature above the disclosed range may damage the film / photomask structure and may result in reduced lithography performance and yield. In some embodiments, different amounts of power (including no power) are applied to each electrode 55. In some embodiments, each electrode 55 is individually controlled by a controller 55. Only the nanotube film is heated by Joule heating. In an embodiment of the present disclosure, the insulating frame 15 insulates the photomask 60 from the heated nanotube film and the current applied to the conductive electrode 55.

[0075] In some embodiments, a temperature sensor 140 is placed near the membrane 19 to monitor the temperature. In some embodiments, the temperature sensor 140 communicates with the controller via conductive leads 145, and in other embodiments, wirelessly. In some embodiments, the power supplied to the membrane 10, and therefore the temperature of the nanotube film, is controlled by the controller 150.

[0076] According to an embodiment of the present disclosure, a method 600 for manufacturing a semiconductor device is described in Fig.15A. In operation S610, the thin film 10 disposed on the photomask 60 is heated. In operation S620, actinic radiation 70 is directed through the thin film. In some embodiments, the photomask 60 is an EUV reflective photomask. The EUV radiation 70 is provided by an EUV radiation source. In operation S630, the EUV radiation 70 passes through the nanotube film 100, is reflected from the photomask 60 in a patterned manner, and is directed through the nanotube film 100 a second time to selectively expose a photoresist layer disposed on a substrate. In some embodiments, the substrate is a semiconductor wafer. The selectively exposed photoresist layer is then developed in operation S640 to form a pattern in the photoresist layer.

[0077] According to another embodiment of the present disclosure, a method 700 for manufacturing a semiconductor device is provided. Fig. 15B . In operation S710, actinic radiation 70 reflected from photomask 60 passes through thin film 10 disposed on the photomask. In operation S720, current is applied to thin film 10 while actinic radiation 70 passes through thin film 10. In operation S730, actinic radiation 70 passing through thin film 10 selectively exposes a photoresist layer disposed on a substrate. In some embodiments, the substrate is a semiconductor wafer. The selectively exposed photoresist layer is then developed in operation S740 to form a pattern in the photoresist layer.

[0078] According to another embodiment of the present disclosure, a method 800 for manufacturing a semiconductor device is provided. Fig. 15C . In operation S810, a film / photomask structure 160 is placed in a lithography exposure apparatus. The film / photomask structure 160 includes a film 10 disposed on a photomask 60. In operation S820, the film 10 is heated by applying an electric current to the film 10. In operation S830, actinic radiation 70 is directed through the film 10 to selectively expose a photoresist layer disposed on a substrate. The selectively exposed photoresist layer is then developed in operation S840 to form a pattern in the photoresist layer.

[0079] In some embodiments, the lithography exposure apparatus is an EUV lithography apparatus, including a scanner or a stepper. In some embodiments, a portion of the lithography apparatus including the film / photomask structure 160 is under vacuum during the lithography exposure operation. In some embodiments, the pressure in the vacuum is equal to or less than 10 Pa, and in other embodiments, the pressure is in the range of 0.1 Pa to 10 Pa. In some embodiments, the Joule heating process is performed in an inert gas environment, such as N 2 and / or Ar.

[0080] In some embodiments, the conductive leads 85 connected to the conductive electrodes 55 are further connected to wires outside the photolithography exposure apparatus, and these wires are connected to the power supply 150 .

[0081] In some embodiments, Fig.16 As shown, the Joule heating operation causes individual separated nanotubes 100M (single-walled or multi-walled nanotubes) to combine and form a nanotube bundle 100B having a seamless graphite structure, in which the nanotubes are firmly joined or bonded, rather than just touching each other. Adjacent conductive nanotubes that transmit current will attract each other through the Ampere force. In some embodiments, three or more nanotubes are connected (joined or bonded) to form a nanotube bundle. In some embodiments, the number of nanotubes in a bundle is as high as 10. The nanotube bundle provides a stronger support for the film and increases the service life of the film. The nanotubes increase the film's resistance to etching caused by hydrogen radicals and hydrogen ions generated during photolithography operations.

[0082] In some embodiments, the carbon nanotube film 100 formed before the Joule heating treatment does not include nanotube bundles or includes a small amount of nanotube bundles, and after the Joule heating treatment, the amount of the carbon nanotube bundles increases.

[0083] In some embodiments, the carbon nanotube film 100 formed before the Joule heating process includes Sp 3 Carbon structures, such as amorphous carbon. Fig.17 As shown, the Joule heating treatment removes amorphous carbon from the film and / or converts amorphous carbon (Sp 3 Carbon structure) into Sp 2 Carbon structure. In some embodiments, the amorphous carbon is graphitized to form a crystalline structure. In some embodiments, the crystallized amorphous carbon forms one or more outer tubes surrounding the inner carbon nanotubes, and these outer tubes have a single-walled or multi-walled structure to form multi-walled nanotubes. In some embodiments, the amount of amorphous carbon in the film formed before Joule heating is in the range of about 1 wt.% to about 50 wt.%, and the amount of amorphous carbon in the film after Joule heating is less than about 3 wt.%. In some embodiments, the amount of amorphous carbon in the film after Joule heating is in the range of about 0.5 wt.% to about 2.5 wt.% based on the total weight of the film. In some embodiments, all of Sp 3 The carbon structure is removed or transformed, so the film after Joule heating shows a strong Raman spectrum in the D band (1360 cm -1 ) does not show a peak. In other embodiments, Sp 3 A portion of the carbon structure is retained and a small peak is observed at the D band. In some embodiments, as an alternative or in addition to carbon nanotubes, the film includes Sp 2Carbon structures such as graphite or graphene.

[0084] Figure 18A-18E A schematic diagram illustrating catalyst removal and bundle formation by Joule heating process according to an embodiment of the present disclosure is shown.

[0085] As described above, the nanotube film 100 may include residual catalyst or catalyst particles 89 therein, such as Fig.18A Joule heating can remove a portion of the residual catalyst from the membrane (see Fig.18B ) or all (see Fig. 18C ). In addition, Fig.18A The isolated nanotubes shown can be converted by Joule heating into Fig.18D and Fig.18E In some embodiments, the amount of residual catalyst in the film formed before Joule heating is in the range of about 7 wt.% to about 15 wt.% based on the total weight of the film, and the amount of residual catalyst in the film after Joule heating is less than about 2 wt.% based on the total weight of the film. In some embodiments, the amount of residual catalyst in the film after Joule heating is in the range of about 0.1 wt.% to about 1.5 wt.% based on the total weight of the film.

[0086] like Fig.19 As shown, in some embodiments, due to electrostatic forces, an electric field generated at the thin film repels contaminant particles 40, thereby preventing contamination of the thin film and subsequent reduction in EUV radiation transmission.

[0087] In other embodiments, Fig. 20 As shown, the heat generated by the current is sufficient to decompose, vaporize or burn contaminant particles 40 on the surface of nanotube film 100 , thereby increasing EUV radiation transmission of film 10 .

[0088] Embodiments of the present disclosure also reverse and prevent wrinkling of the nanotube film. Fig.21A As shown, wrinkles in the nanotube film may cause large deflections of the film, which may cause the film to break. In addition, wrinkles may also cause critical dimension (CD) errors in the pattern to be formed, because a portion of the EUV radiation 70 may be reflected by the wrinkles away from the intended radiation path. Therefore, the total energy of exposing the photoresist layer will be reduced. Fig.21B As shown, applying a voltage across the nanotube film flattens the wrinkles. In some embodiments, a voltage of about 5V to about 50V is sufficient to reverse or prevent the wrinkling of the film.

[0089] The Joule heating process according to the present disclosure also reduces the etching rate of the nanotube film. A hydrogen plasma including hydrogen ions and hydrogen radicals is generated by the EUV lithography process. During the EUV lithography process, the hydrogen plasma etches the carbon nanotubes and graphene in the film, thereby shortening the life of the film. The high temperature of the film caused by Joule heating makes it more difficult for hydrogen ions and radicals to adhere to the film, thereby slowing down the hydrogen plasma etching rate.

[0090] As described above, controller 150 is used to control the power supplied to the film, thereby controlling the temperature of nanotube film 100. In some embodiments, controller 150 is a computer system. Fig.22A and Fig. 22B A computer system 150 is shown for controlling a power source and applying current to each electrode 55 according to various embodiments of the present disclosure. The controller 150 may also be used to control heating operations S610, S720, and S820. In some embodiments, the controller is a module of a larger computer system that controls other functions of the lithography exposure apparatus, including movement of the stepper / scanner, vacuum atmosphere, and EUV radiation exposure of a photoresist-coated substrate. Fig.22A is a schematic diagram of a computer system 150 that controls a power supply 135 and a temperature sensor 140 .

[0091] like Fig.22A As shown, in some embodiments, the computer system 150 is equipped with a computer 1001, a keyboard 1002, a mouse 1003 (or other similar input devices) and a display 1004, and the computer 1001 includes a disc read-only memory (such as a CD-ROM or DVD-ROM) drive 1005 and a disk drive 1006.

[0092] Fig. 22B 1 is a schematic diagram showing the internal configuration of the computer system 150. Fig. 22BIn addition to the optical drive 1005 and the magnetic disk drive 1006, the computer 1001 is also equipped with: one or more processors 1011, such as a microprocessor unit (MP) or a central processing unit (CPU); a read-only memory (ROM) 1012, in which programs such as boot programs are stored; a random access memory (RAM) 1013, connected to the processor 1011 and in which commands for application programs are temporarily stored and a temporary electronic storage area is provided; a hard disk 1014, in which application programs, operating system programs and data are stored; and a data communication bus 1015, connecting the processor 1011, the ROM 1012, etc. Note that the computer 1001 may include a network card (not shown) for providing a connection to a computer network such as a local area network (LAN), a wide area network (WAN), or any other useful computer network for transmitting data used by the computer system 150 and the power supply 135. In various embodiments, the controller 150 communicates with the deposition apparatus 200, its components, and other tools used in semiconductor device manufacturing operations via wireless or hard-wired connections.

[0093] A program for causing the computer system 150 to execute the method for controlling the heating of the film 100 is stored in the optical disk 1021 or the magnetic disk 1022, which is inserted into the optical disk drive 1005 or the magnetic disk drive 1006, and is transferred to the hard disk 1014. Alternatively, the program is transferred to the computer system 150 via a network (not shown) and stored in the hard disk 1014. When executed, the program is loaded into the RAM 1013. In various embodiments, the program is loaded from the optical disk 1021 or the magnetic disk 1022, or directly from the network.

[0094] The stored program does not necessarily have to include, for example, an operating system (OS) or a third-party program to enable the computer 1001 to perform the methods disclosed herein. In some embodiments, the program may only include a command portion that calls the appropriate function (module) in a controlled mode and obtains the desired result. In various embodiments described herein, the controller 150 communicates with the power supply 135 and the temperature sensor 140 to control their various functions.

[0095] The controller 150 is configured to provide control data to system components and receive process and / or state data from these system components. For example, in some embodiments, the controller 150 includes a microprocessor, a memory (e.g., volatile or non-volatile memory), and a digital I / O port that can generate control voltages sufficient to transmit and activate inputs to the processing system and monitor outputs from the power supply 135 and the temperature sensor 140. In addition, process recipes can be stored for the controller. In addition, the controller 150 is configured to analyze process and / or state data, compare the process and / or state data with target process and / or state data, and use the comparison results to change the process and / or control system components. In addition, the controller 150 is configured to analyze process and / or state data, compare the process and / or state data with historical process and / or state data, and use the comparison results to predict, prevent and / or announce faults or alarms.

[0096] Fig.23A A flowchart of a method 900 for manufacturing a semiconductor device is shown, and Fig. 23B , Fig.23C , Fig.23D and Fig.23E A sequential manufacturing method for making a semiconductor device according to an embodiment of the present disclosure is shown. A semiconductor substrate or other suitable substrate to be patterned to form an integrated circuit thereon is provided. In some embodiments, the semiconductor substrate includes silicon. Alternatively or additionally, the semiconductor substrate includes germanium, silicon germanium, or other suitable semiconductor material, such as a III-V semiconductor material. Fig.23A At S910, a target layer 115 to be patterned is formed on a semiconductor substrate 110. In some embodiments, the target layer 115 is a semiconductor substrate. In some embodiments, the target layer 115 includes a conductive layer, such as a metal layer or a polysilicon layer; a dielectric layer, such as silicon oxide, silicon nitride, SiON, SiOC, SiOCN, SiCN, hafnium oxide, or aluminum oxide; or a semiconductor layer such as an epitaxially formed semiconductor layer. In some embodiments, the target layer 115 is formed on an underlying structure, such as an isolation structure, a transistor, or a wiring. At S920, as Fig. 23B As shown, a photoresist layer 120 is formed on the target layer. During a subsequent photolithography exposure operation, the photoresist layer 120 is sensitive to radiation from an exposure radiation source. In this embodiment, the photoresist layer 120 is sensitive to EUV light used in the photolithography exposure operation. The photoresist layer 120 may be formed on the target layer 115 by spin coating or other suitable techniques. The coated photoresist layer may be further baked to expel solvents in the photoresist. At S930, as shown in FIG. Fig.23CAs shown, as described above, the photoresist layer 120 is patterned in the lithography exposure device 165 using a film / photomask structure 160. During the lithography exposure operation, the integrated circuit (IC) design pattern defined on the photomask 60 is imaged to the photoresist layer 120 to form a latent pattern thereon. The patterning of the photoresist layer also includes developing the exposed photoresist layer to form a patterned photoresist layer with one or more openings 125. In an embodiment where the photoresist layer is a positive photoresist layer, the exposed portion of the photoresist is removed during the development operation. Other operations may also be included for the patterning of the photoresist layer, such as various baking operations at different stages. For example, a post-exposure baking (PEB) process may be implemented after the lithography exposure operation and before the development operation.

[0097] At S940, the target layer 115 is patterned using the patterned photoresist layer 120 as an etching mask, such as Fig.23D In some embodiments, patterning the target layer includes etching the target layer using the patterned photoresist layer as an etching mask. Etching the portion of the target layer exposed within the opening of the patterned photoresist layer while protecting the remaining portion from etching. In addition, the patterned photoresist layer can be removed by wet stripping or plasma ashing, such as Fig.23E shown.

[0098] Other embodiments include other operations before, during, or after the above operations. In some embodiments, the disclosed method includes forming a fin field effect transistor (FinFET) structure. In some embodiments, a plurality of active fins are formed on a semiconductor substrate. Such embodiments also include etching a substrate through openings of a patterned hard mask to form trenches in the substrate; filling the trenches with a dielectric material; performing a chemical mechanical polishing (CMP) process to form shallow trench isolation (STI) features; and epitaxially growing or recessing STI features to form fin-shaped active areas. In some embodiments, one or more gate electrodes are formed on the substrate. Some embodiments include forming gate spacers, doped source / drain regions, contacts for gate / source / drain features, and the like. In other embodiments, the target pattern is formed as a metal line in a multilayer interconnect structure. For example, the metal line can be formed in an interlayer dielectric (ILD) layer of a substrate that has been etched to form a plurality of trenches. The trenches may be filled with a conductive material, such as a metal; and a process such as chemical mechanical planarization (CMP) may be used to polish the conductive material to expose the patterned ILD layer, thereby forming metal lines in the ILD layer. The above are non-limiting examples of devices / structures that can be manufactured and / or improved using the methods described herein.

[0099] In some embodiments, according to embodiments of the present disclosure, active components such as diodes, field effect transistors (FETs), metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductor (CMOS) transistors, bipolar transistors, high voltage transistors, high frequency transistors, sheet FETs, FinFETs, gate all around FETs (GAA-FETs), other three-dimensional (3D) FETs, other memory cells, and combinations thereof are formed.

[0100] In the aforementioned embodiments, Joule heating is performed on the thin film to expel contaminants, remove contaminants, form nanotube bundles, and smooth wrinkles in the thin film. The thin film according to the embodiments of the present disclosure provides higher strength, lower contamination, increased corrosion resistance, and higher EUV transmittance than conventional thin films. As described above, the embodiments of the present disclosure improve the chemical and mechanical properties of thin film nanotube films.

[0101] It will be understood that not all advantages are necessarily discussed herein, that all embodiments or examples do not require a particular advantage, and that other embodiments or examples may provide different advantages.

[0102] An embodiment of the present disclosure is a method of manufacturing a semiconductor device, comprising heating a film disposed over a photomask. Actinic radiation is directed through the film to selectively expose a photoresist layer on a substrate. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. In one embodiment, the heating is Joule heating. In one embodiment, the film includes a layer including a plurality of nanotubes disposed over a frame. In one embodiment, the frame includes a plurality of conductive electrodes. In one embodiment, heating the film includes applying a current to the plurality of conductive electrodes. In one embodiment, the plurality of conductive electrodes include one or more first electrodes disposed on a first side of the frame and one or more second electrodes disposed on an opposite second side of the frame. In one embodiment, the plurality of conductive electrodes include one or more electrodes disposed on each side of the frame. In one embodiment, a voltage of 5V to 500V is applied to the plurality of conductive electrodes. In one embodiment, the film is heated to a temperature in the range of 500°C to 2000°C. In one embodiment, the film is heated when actinic radiation is directed through the film.

[0103] Another embodiment of the present disclosure is a method for manufacturing a semiconductor device, comprising selectively exposing a photoresist layer disposed on a substrate to actinic radiation. The actinic radiation passes through a thin film disposed over a photomask, and the actinic radiation is reflected from the photomask. When the actinic radiation passes through the thin film, an electric current is applied to the thin film to heat the thin film. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. In one embodiment, the thin film includes a film comprising a plurality of nanotubes disposed over a frame, wherein the frame comprises a plurality of conductive electrodes. In one embodiment, the plurality of nanotubes comprise carbon nanotubes. In one embodiment, the frame comprises one or more conductive electrodes disposed on opposite sides of the frame. In one embodiment, the thin film is heated to a temperature in a range of 500°C to 2000°C. In one embodiment, the actinic radiation is extreme ultraviolet radiation.

[0104] Another embodiment of the present disclosure is a method for manufacturing a semiconductor device, comprising placing a film / photomask structure in a lithography exposure apparatus. The film / photomask structure includes a film disposed on a photomask. The film is heated by applying an electric current to the photomask structure via electrodes on a frame of the film. Actinic radiation is directed from the photomask through the film to selectively expose a photoresist layer disposed on a substrate. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. In one embodiment, the film includes a film including a plurality of carbon nanotubes disposed on a frame. In one embodiment, the film is heated to a temperature in the range of 500°C to 2000°C. In one embodiment, the actinic radiation is extreme ultraviolet radiation.

[0105] Another embodiment of the present disclosure is a film comprising a transparent conductive film disposed on a frame. The frame comprises two or more conductive electrodes disposed on the frame. In one embodiment, the one or more conductive electrodes are disposed on opposite sides of the frame. In one embodiment, the transparent conductive film comprises a plurality of nanotubes. In one embodiment, the plurality of nanotubes comprise carbon nanotubes. In one embodiment, the plurality of nanotubes comprise multi-walled nanotubes. In one embodiment, the transparent conductive film allows extreme ultraviolet radiation to pass through.

[0106] Another embodiment of the present disclosure is a thin film having a membrane, which includes a plurality of nanotubes disposed on a frame. The frame includes one or more conductive electrodes disposed on opposite sides of the frame. In one embodiment, the frame is a rectangular frame, including one or more conductive electrodes disposed on each side of the frame. In one embodiment, the plurality of nanotubes include carbon nanotubes. In one embodiment, the plurality of nanotubes include multi-walled nanotubes. In one embodiment, the frame is a rectangular frame, and the one or more conductive electrodes are disposed on each side of the frame. In one embodiment, the frame includes one or more layers of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, aluminum oxide, or ceramic. In one embodiment, the surface of the plurality of nanotubes includes crystalline carbon. In one embodiment, the conductive electrode includes copper, gold, nickel, silver, or an alloy thereof. In one embodiment, the conductive electrode is disposed between the nanotubes and the frame. In one embodiment, the thin film includes conductive leads connected to each conductive electrode.

[0107] Another embodiment of the present disclosure is a film comprising a carbon nanotube layer disposed on a frame. Two or more electrodes are disposed between the frame and the carbon nanotube layer. Along the length or width of the carbon nanotube layer, a first electrode is disposed on a first side of the carbon nanotube layer, and a second electrode is disposed on an opposite second side of the carbon nanotube layer. A conductive lead extends from each electrode. In one embodiment, the carbon nanotube layer comprises a plurality of carbon nanotube bundles, wherein the carbon nanotubes in each carbon nanotube bundle are connected to form a seamless graphite structure. In one embodiment, the carbon nanotube layer comprises multi-walled carbon nanotubes. In one embodiment, the frame is made of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, aluminum oxide or ceramic. In one embodiment, the conductive electrode comprises graphite or a metal selected from the group consisting of copper, gold, nickel, silver or an alloy thereof.

[0108] Another embodiment of the present disclosure is a film / photomask structure comprising a film attached to a photomask. The film comprises a non-conductive frame, two or more electrodes disposed on the non-conductive frame, and a nanotube layer disposed on the non-conductive frame and the two or more electrodes. Along the length or width of the nanotube layer, a first electrode is disposed on a first side of the nanotube layer, and a second electrode is disposed on an opposite second side of the nanotube layer. In one embodiment, the photomask is a reflective photomask having a patterned surface, and the film is disposed on the patterned surface of the photomask. In one embodiment, the non-conductive frame is made of crystalline silicon, polycrystalline silicon, silicon oxide, silicon nitride, aluminum oxide, or ceramic. In one embodiment, the film frame is attached to the photomask via an adhesive. In one embodiment, the nanotube layer comprises multi-walled nanotubes.

[0109] The features of several embodiments or examples are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. It should be appreciated by those skilled in the art that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for performing the same purpose and / or achieving the same advantages of the embodiments described herein. It should also be appreciated by those skilled in the art that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and modifications without departing from the spirit and scope of the present disclosure.

[0110] Example 1. A method for manufacturing a semiconductor device, comprising: heating a thin film disposed over a photomask; directing actinic radiation through the thin film to selectively expose a photoresist layer on a substrate; and developing the selectively exposed photoresist layer to form a pattern in the photoresist layer.

[0111] Example 2. The method of Example 1, wherein the heating is Joule heating.

[0112] Example 3. The method of Example 1, wherein the thin film comprises a layer comprising a plurality of nanotubes disposed on a frame.

[0113] Example 4. The method of Example 3, wherein the frame comprises a plurality of conductive electrodes.

[0114] Example 5. The method of Example 4, wherein heating the film comprises applying an electric current to the plurality of conductive electrodes.

[0115] Example 6. The method of Example 4, wherein the plurality of conductive electrodes includes one or more first electrodes disposed on a first side of the frame and one or more second electrodes disposed on an opposite second side of the frame.

[0116] Example 7. The method of Example 4, wherein the plurality of conductive electrodes includes one or more electrodes disposed on each side of the frame.

[0117] Example 8. The method of Example 4, wherein a voltage of 5 V to 500 V is applied to the plurality of conductive electrodes.

[0118] Example 9. The method of Example 1, wherein the film is heated to a temperature in the range of 500°C to 2000°C.

[0119] Example 10. The method of example 1, wherein the film is heated when the actinic radiation is directed through the film.

[0120] Example 11. A method for manufacturing a semiconductor device, comprising: selectively exposing a photoresist layer disposed on a substrate to actinic radiation, wherein the actinic radiation passes through a thin film disposed on a photomask and the actinic radiation is reflected from the photomask; applying an electric current to the thin film to heat the thin film when the actinic radiation passes through the thin film; and developing the selectively exposed photoresist layer to form a pattern in the photoresist layer.

[0121] Example 12. The method of Example 11, wherein the thin film comprises a membrane comprising a plurality of nanotubes disposed on a frame, wherein the frame comprises a plurality of conductive electrodes.

[0122] Example 13. The method of Example 12, wherein the plurality of nanotubes comprises carbon nanotubes.

[0123] Example 14. The method of Example 12, wherein the frame includes one or more conductive electrodes disposed on opposite sides of the frame.

[0124] Example 15. The method of Example 11, wherein the film is heated to a temperature in the range of 500°C to 2000°C.

[0125] Example 16. The method of Example 11, wherein the actinic radiation is extreme ultraviolet radiation.

[0126] Example 17. A thin film comprising: a transparent conductive film disposed on a frame, wherein the frame comprises two or more conductive electrodes disposed on the frame.

[0127] Example 18. The film of Example 17, wherein one or more conductive electrodes are disposed on opposite sides of the frame.

[0128] Example 19. The thin film of Example 17, wherein the transparent conductive film comprises a plurality of nanotubes.

[0129] Example 20. The film of Example 19, wherein the plurality of nanotubes comprises carbon nanotubes.

Claims

1. A method for manufacturing a semiconductor device, comprising: heating a film disposed over the photomask; directing actinic radiation through the film to selectively expose a photoresist layer on the substrate; and The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer.

2. The method according to claim 1, wherein: The heating is Joule heating.

3. The method according to claim 1, wherein: The thin film includes a layer including a plurality of nanotubes disposed on a frame.

4. The method according to claim 3, wherein: The frame includes a plurality of conductive electrodes.

5. The method according to claim 4, wherein: Heating the film includes applying an electric current to the plurality of conductive electrodes.

6. The method according to claim 4, wherein: The plurality of conductive electrodes includes one or more first electrodes disposed on a first side of the frame and one or more second electrodes disposed on an opposite second side of the frame.

7. The method according to claim 4, wherein: The plurality of conductive electrodes includes one or more electrodes disposed on each side of the frame.

8. The method according to claim 4, wherein: A voltage of 5V to 500V is applied to the plurality of conductive electrodes.

9. A method for manufacturing a semiconductor device, comprising: selectively exposing a photoresist layer disposed on a substrate to actinic radiation, wherein the actinic radiation passes through a film disposed over a photomask and the actinic radiation is reflected from the photomask; applying an electric current to the film to heat the film when the actinic radiation passes through the film; and The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer.

10. A film comprising: A transparent conductive film is provided on the frame. Wherein, the frame includes two or more conductive electrodes arranged on the frame.

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